1298817 九、發明說明： 【發明所屬之技術領域】 、本發明-種反射式光罩之不鑛鋼基板，其主要係以不鏽鋼作為反 射式光罩之基板材料，藉由不鏽鋼本身之高反射率取代習用多層反射 鍍膜，並於不鏽鋼基板表面鍍製一層吸收層；再於該吸收層上以曝光 顯影及蝕刻直到該不鏽鋼層，以產生反射式曝光光罩之圖形。 【先前技術】 ° 光罩係一種廣泛應用於積體電路、tft_lcd、彩色濾、光片、磁性 δ貝取頭、電漿顯示器等產品製造關鍵零組件之重要技術，其種類包括 二元光罩、相移鮮、獅光科。其巾二元光罩暖展時程較早， 因此目命市面上多數的產品均採用二元光罩，過去年來一直居於市 場的主流地位。這些光罩大纽时献的石英基板或是玻璃基板， 以做為穿透式光學曝光系統； 目前應用光罩技術之產業除了半導體外，LCD之製程中亦可應用 到光罩技術，LCD用光罩主要是應用於LCD面板或彩色濾光片黃光段 之曝光製程，而LCD用光罩與1C用光罩最大差別，一是精細度要求， ic製程目前線寬已達018，以下，但LCD最精細也不過i心㈤左 右；其次則是基板大小，ic目前最大尺寸為12吋石夕晶圓，但LCD基 板則不斷增大，目前六代面板尺寸已達1200 mm*1300 mm，單片面板 尺寸也達52吋以上，所以LCD產業對光罩之要求是往大型化盥高精 細化發展； 傳統穿透式光罩係使用可見光或是紫外線作為圖案轉移技術的光 線來源，預先在基板上形成精密的電路圖案，藉由該基板折射於元件 上產生曝光顯影；然而，近年來元件之尺寸大小迅速降低，穿透式光 罩之微影術因為圖案解析度會受到半個曝光波長之限制，而無法^到 更高解析度之需求；以F2鐳射(157奈米)為例，其解析度大約限制在 70奈米。因此，近來逐漸改以EUV(極端紫外)光作為微影術的曝光光 源，EUV光為軟χ射線或是真空紫外線，其波長比^2短，大約在 1298817 0.2-1^)奈米的區域’可達到更高的解析度，其逐漸成為％奈米或是更 小線寬製程的下一代曝光光源； 然而，傳統微影術中所採用的石英或是玻璃基板材料對於euv光 具有相當高的吸收率，而且對EUV光的折射率約略等於i，因此也無 法建立曝光光料統。至於目前衫業者職狀光 罩’也會目為薄膜光罩對於EUV光的吸收率過高，麟曝光所需要的 日守間也Ik之增加’而無法保持要求的生產效能；因此，EUV光並益法 應用傳統穿透式之光學系統曝光方式，取而代之的是反射式光學系統。 如第-圖所示，傳統的反射型光罩係在石英或是玻璃材質之基板⑴ 上形成多層反射層結構的方式製作，絲基板⑴上沈積多層的反射膜 (2)，然後在反射膜(2)上沈積餘刻終止層⑶，最後在侧終止層⑶上再 沈積-吸㈣(4)而完成空㈣光罩基板⑴。光罩廠商制空白的光罩 基板(1)時’係先在光罩基板⑴上的吸收層⑷中，以曝光顯影及侧的 方式，將光罩圖形所在處之外的吸收層⑷除去，直到多層膜上的侧 終止層(3)，以產生反射式曝光光罩圖形。 而當曝光絲之光驗人反料鮮後，黯於反細⑺的光線 被反射出去，而照在具有_之吸收層⑷的光線則會被魏而無法反 射；因此，被反射的部分與吸收的部分之間會形成高對比的投影圖案(如 第二圖圖面所示）。 不過為了使光罩有足夠的反射率，反射膜(2)需要具有相當高的密 度，以增加反射膜(2)之反射率，因此，當基板⑴上錢製多層反射膜⑺ 時，4反射膜(2)對於基板(1)表面會產生了相當高的壓縮張力。 而當反射膜(2)高壓縮張力使基板(1)彎曲而變形成一個凸表面，同 時也會使得蝕刻於光罩表面的圖形部分發生彎曲。例如，當在6吋平 方和6.35耄米厚度之石英基板上形成〇·3微米厚度的多層膜時，其壓 縮張力大約是200 Mpa，此時在140x 140毫米的區域中可以產生5〇〇夺 米的彎曲(變形）。當使用這樣的光罩把一種圖案轉移到晶圓上時，此^ 面；曲降低了轉移準確度或是發生圖案的安排錯誤，而無法進行高準 1298817 確度的轉移。 為了解決彎曲變形之問題，需要降低多層_產生的壓力，唯-的方^只能降低顯之密度，以減少频之收縮力量；但若因此而將 反射膜(2)之⑯度降低’又會使得反細(2)對於光線的反射率也隨之降 低反而因曝光日寸間拉長而造成生產效率降低，降低鑛膜密度並不實 際。 “且田石英基板⑴尺寸加大時容易產生圖案變形⑽彪i〇n)，且石 英基板(1)大3L化產生日$ ’其製作成本也隨之增高，但產品良率卻容易 下降。 ，者’不娜疋牙透式或反射式光罩所使用的石英、玻璃基板，都 存在著下列之缺慽： ⑴基板製造成本過高，U大型尺寸之石英基板為例，其價格為1〇〇 至300萬台幣以上。 (2)製程繁複、生產量低，從訂單至到貨時間至少須一個月。 ⑶很難重覆使用’石英基板重覆使用率小於3次。 【發明内容】 發明所欲解決之技術問題： 傳統之光罩不論是穿透式或反射式光罩，大纽用石英基板或是 玻，基板，其技術雖綠為成熟，具有相當程度之可#度，但是石英 或是玻璃基板卻有高成本、生產量低難以重覆使料重大缺點； 再者，白用之反射式光罩使用石英或是玻璃材料做為基板時，需 先於基板表⑽好層的反賴、吸收層及#祕止料，不但製造 私序複雜’且多層膜的高壓縮張力容驗得基板表面彎曲、變形，同 時也，使得侧於光罩表面關形部分發生變形錯誤，降低轉移準確 度或疋發生圖案的安排錯誤；更會使得產品的不良率上昇，導致製 成本之增加。 < ° 發明解決問題之技術手段： 1298817 一種反射式光罩之不鏽鋼基板製造方法，其主要係包含有以下之 步驟： (A) 清洗不鑛鋼基板； (B) 於不鏽鋼基板表面鍍製一層吸收層； (C) 於該吸收層上以曝光顯影及蝕刻直到該不鏽鋼層，以產生反射 式曝光光罩之圖形。 發明對照先前技術之功效： 傳統反射式基板需鐘製約5層不同的膜材料，而本發明之不鑛鋼 基板光罩基板只需鍍製一層吸收層，不需在基板上沈積多層結構的反 射膜、蝕刻終止層、吸收層，可大幅縮短基板之製程，製程時間縮短 為五分之一，再加上由於僅需鍍製一層吸收層，產品良率可從95%增 加為98%以上，因此產量自然增加五倍以上。 除了基板材料早價降低(不鏽鋼材料較石英或玻璃材料降低約 30/。），可減少庫存成本二分之一之外，另一方面省略多道艘膜製程， 可以提供更高的良率，因此可以降低不良率產生的成本。因為大型石 英基板價格為100至300萬台幣以上，95%良率代表5%的基板損失率， 因此每一片石英基板的製程風險攤提約為5〜15萬元，而相較下'，不鏽 鋼基板光罩基板的良率為98%，基板價格為30至1〇〇萬台幣，因此每 一片不鏽鋼基板的製程風險攤提約僅為i〜2萬元。 傳統的光罩基板產品為了增加反射率，必需增加多層反射膜之密 度’不可避免在基板上產生很高的壓縮張力；❿高壓縮張力容易使基 板表面彎曲而變形成-個凸表面，同時也會使得在光罩表面的圖形發 生變形。相對地，不鏽鋼基板光罩基板不需鍍製高密度的多層結構的 反射膜，因此可使得鍍膜後基板產生的變形機率降低。 傳統的光罩基板產品使用石英基板歧玻璃基板，難後容易受 到多層膜的壓縮張力產生形變，除此之外，還有石英基板本身固有的 1298817 形變存在；由於石英基板沒有展延性及可塑性，因此必須另行鑛製一 壓力改正膜來降低張力以改正基板表面的彎曲，這樣卻會增加一道製 程；本發明因使用不鏽鋼㈣作為光罩基板，因其具展延性及可塑性: 因此錢膜後可修正基板產生的變形，使光罩基板的表面具有應奈米 或更佳的平坦度。 石英基板或是玻璃基板之競爭產品的最佳切割形狀為方形，本發 月之不鐘鋼材貝基板很谷易切割為各種形狀以適合各種不同之光學系 統，除此之外，因為不鏽鋼材質具展延性及可塑性，可以鍍製出各種 曲率的基板，以適用於發散或聚光的曝光系統。 < 【實施方式】 如第三圖圖面所示，本發明一種反射式光罩之不鏽鋼基板製造方 法’其主要係包含有以下之步驟： (A)清洗不鏽鋼基板（1〇);將該不鏽鋼基板（1〇)之表面以清洗劑 或純水谷液清洗，以去除不鏽鋼基板（10)表面之微粒，控制其表面 微粒直徑低於5〜10//m，且數量低於〇·〇ι個/平方公分；其中，該不鏽 鋼基板（10)本身具有反射面（11)，該不鏽鋼基板(1〇)反射面（η)之反 射率係至少高於35%以上。 (Β)如第四Α圖圖面所示，於該不鏽鋼基板（1〇)表面之反射面 (11)上鍍製一層吸收層（2〇);該吸收層（2〇)係可為氧化鉻等低反射率 之材料所形成，其中，該吸收層（2〇)之厚度係約為18〇〇埃到2200埃 之間’且該吸收層（20)對600〜800nm波長光線之反射率係低於10%以下； (C)如第四B圖圖面所示，於該吸收層（20)上以曝光顯影及蝕刻 直到該不鏽鋼層，以產生反射式曝光光罩之圖形； 再者，如第五圖圖面所示，其係為本發明之實施結構示意圖，其 1298817 必需增加多層反射膜之密度，不可避免在基板上產生很高的壓縮張 力；而咼壓縮張力容易使基板表面彎曲而變形成一個凸表面，同時也 會使得在光罩表面的圖形發生變形。相對地，不鏽鋼基板（10)不需鍍 製咼岔度的多層結構的反射膜，因此可使得鍍膜後基板產生的變形機 率降低。 (4) 鍍膜後可以掌控基板平坦度：傳統的光罩基板產品使用石英 基板或疋玻璃基板，鍍膜後容易受到多層膜的壓縮張力產生形變，除 此之外，還有石英基板本身固有的形變存在；由於石英基板沒有展延 性及可塑性，因此必須另行鍍製—壓力改正膜來降低張力以改正基板 表面的彎曲，這樣卻會增加一道製程；本發明因使用不鏽鋼材質作為 光罩基板，因其具展延性及可塑性，因此鍍膜後可修正基板產生的變 形，使光罩基板的表面具有100奈米或更佳的平坦度。 (5) 可以鍍製各種形狀的基板··石英基板或是玻璃基板之競爭產 品的最佳_形狀為方形，本發明之不細材質基板很容《切割為各 種形狀以適合各種不同之光學系統，除此之外，因為不鏽鋼材質具展 延性及可塑性，可以鍍製出各種曲率的基板，以適用於發散或聚光的 曝光系統。 不鏽鋼基板（10)因為本身具有大約35%以上的反射率，因此使用不 鏽鋼基板⑽製作的反射式光罩基板不需要鍍上高密度的反射層，避 免了壓縮張力產生的基板形變；此外，由於不鏽鋼基板（1〇)具有可修 改平坦度的«躲，錢-步相雜麵的平整度。更重要的， =鏽鋼基板⑽具有低基板成本以及低製造風險，有潛力取代傳統石 英或玻璃光罩基板成為光罩業者普遍採用之材料。 再者’魏收層（2G)之外絲更可增設—光峨，當不細基板 ⑽尚未進行曝光顯影及侧鮮_之前，可於吸收層⑽及不鐘 鋼基板(10)之外表面處形成保護效果，冑免於運輸過程中不慎刮傷， 或是被塵埃粒子吸附，並可配合下一階段之光罩圖形製程。 綜上所陳，本創作具有新穎之結構及進步之功效，誠符合專利法 之規定，爰依法提出申請，並盼早日准予專利，申請人是幸。 1298817 〜 【圖式簡單說明】 第一圖係習用之反射式光罩基板製作流程示意圖。 第二圖係習用之反射式光罩動作示意圖。 第三圖係本發明之製作流程示意圖。 第四A圖係不鏽鋼基板之製作動作示意圖（一）。 第四B圖係不鏽鋼基板之製作動作示意圖（二）。 第五圖係本發明之實施結構示意圖。 第六圖係本發明之動作示意圖。 【主要元件符號說明】 • T鑛基板(10) 反射面（11) 吸收層（20) 光罩圖形(30)1298817 IX. Description of the invention: [Technical field of the invention] The invention relates to a non-mineral steel substrate of a reflective reticle, which mainly uses stainless steel as a substrate material of a reflective reticle, and has high reflectivity by stainless steel itself. Instead of conventional multi-layer reflective coating, an absorbing layer is plated on the surface of the stainless steel substrate; and then exposed and developed on the absorbing layer to the stainless steel layer to produce a pattern of the reflective exposure reticle. [Prior Art] ° Photomask is an important technology widely used in the manufacture of key components such as integrated circuit, tft_lcd, color filter, optical film, magnetic δ behead head, plasma display, etc., including binary masks. Phase shift fresh, Shiguang Branch. Its towel binary mask warm-up time is earlier, so most of the products on the market use binary masks, which have been in the mainstream of the market for the past years. These reticle large quartz crystal substrates or glass substrates are used as transmissive optical exposure systems; currently, in addition to semiconductors, the industry of reticle technology can also be applied to reticle technology in LCD manufacturing processes. The mask is mainly applied to the exposure process of the yellow panel of the LCD panel or the color filter, and the mask of the LCD is the biggest difference with the mask of 1C. First, the fineness requirement, the current line width of the ic process has reached 018, below. But the LCD is the finest, but it is about the heart (five); the second is the size of the substrate, the current maximum size of ic is 12 吋 夕 wafer, but the LCD substrate is constantly increasing, the current six-generation panel size has reached 1200 mm * 1300 mm, The size of the single-chip panel is also more than 52吋, so the LCD industry's requirements for the reticle are to develop with high-definition and high-definition; the traditional transmissive reticle uses visible light or ultraviolet light as the source of light for pattern transfer technology. A precise circuit pattern is formed on the substrate, and the substrate is refracted on the element to produce exposure and development; however, in recent years, the size of the element is rapidly reduced, and the lithography of the transmissive mask is patterned. Half the exposure wavelength is limited short of the demands of higher resolution to ^; to F2 laser (157 nm) for example, its resolution is limited to about 70 nm. Therefore, recently, EUV (Extreme Ultraviolet) light has been gradually changed as the exposure light source of lithography. EUV light is soft ray or vacuum ultraviolet light, and its wavelength is shorter than ^2, which is about 1298817 0.2-1^). 'Achieve higher resolution, which gradually becomes the next generation exposure source of % nano or smaller line width process; however, the quartz or glass substrate material used in traditional lithography has a relatively high level for euv light. The absorption rate, and the refractive index of the EUV light is approximately equal to i, so that the exposure light system cannot be established. As for the current shirt manufacturer's reticle, it will also be seen that the film reticle has too high absorption rate for EUV light, and the daily observing space required for lin exposure is also increased by Ik', and the required production efficiency cannot be maintained; therefore, EUV light The method of applying the traditional transmissive optical system exposure method is replaced by a reflective optical system. As shown in the first figure, a conventional reflective reticle is fabricated by forming a multilayer reflective layer structure on a quartz or glass substrate (1), and a plurality of reflective films (2) are deposited on the silk substrate (1), and then in a reflective film. (2) The upper deposition stop layer (3) is finally deposited, and finally the (four) (4) is deposited on the side termination layer (3) to complete the empty (four) photomask substrate (1). When the mask manufacturer manufactures a blank mask substrate (1), the absorber layer (4) outside the mask pattern is removed by exposure and development on the absorber layer (4) on the mask substrate (1). The side termination layer (3) on the multilayer film is used to create a reflective exposure mask pattern. When the light of the exposure wire is inspected, the light of the anti-fine (7) is reflected, and the light that shines on the absorption layer (4) is not reflected by the Wei; therefore, the reflected part and A highly contrasted projection pattern is formed between the absorbed portions (as shown in the second image). However, in order for the reticle to have sufficient reflectivity, the reflective film (2) needs to have a relatively high density to increase the reflectance of the reflective film (2), and therefore, when the substrate (1) is made of a multilayer reflective film (7), 4 reflections The film (2) produces a relatively high compressive tension on the surface of the substrate (1). When the high compression tension of the reflective film (2) causes the substrate (1) to be bent to form a convex surface, the portion of the pattern etched on the surface of the reticle is also bent. For example, when a multilayer film having a thickness of 〇·3 μm is formed on a quartz substrate having a thickness of 6 吋 square and 6.35 耄m, the compression tension is about 200 MPa, and at this time, 5 〇〇 can be produced in a region of 140×140 mm. The bending (deformation) of the meter. When such a mask is used to transfer a pattern onto a wafer, the curvature reduces the transfer accuracy or the arrangement of the pattern, and the transfer of the Micro Motion 1298817 is not possible. In order to solve the problem of bending deformation, it is necessary to reduce the pressure generated by the multilayer layer, and only the square can only reduce the apparent density to reduce the contraction force of the frequency; however, if the reflection film (2) is lowered by 16 degrees, It will cause the anti-fine (2) to reduce the reflectivity of the light, but the production efficiency will decrease due to the lengthening of the exposure time. It is not practical to reduce the density of the mineral film. "When the size of the quartz crystal substrate (1) is increased, the pattern deformation (10) 容易i〇n) is likely to occur, and the production cost of the quartz substrate (1) is increased by 3 liters, but the production yield is also likely to decrease. The quartz and glass substrates used in the 'Breakfast or Reflective Photomasks' have the following disadvantages: (1) The substrate manufacturing cost is too high, and the U large-sized quartz substrate is taken as an example, and its price is 1 〇〇 to more than 3 million Taiwan dollars. (2) The process is complicated and the production volume is low. It takes at least one month from the order to the arrival time. (3) It is difficult to repeatedly use the 'Quartz substrate repeated use rate is less than 3 times. The technical problem to be solved by the invention: the traditional photomask, whether it is a transmissive or reflective reticle, a quartz substrate or a glass substrate, the substrate, the technology is green, and has a considerable degree of degree, but Quartz or glass substrates have high cost and low production capacity, which is difficult to repeat and cause major defects. In addition, when the reflective mask used for white uses quartz or glass as the substrate, it must be layered before the substrate (10). Resilience, absorption layer and #秘The material, not only the manufacturing of the private sequence is complicated, and the high compression tension of the multilayer film allows the surface of the substrate to be bent and deformed, and at the same time, the deformation of the edge of the hood surface is deformed, and the transfer accuracy or the arrangement of the pattern is reduced. Wrong; it will increase the defect rate of the product, resulting in an increase in cost. <° Technical means for solving the problem: 1298817 A method for manufacturing a stainless steel substrate with a reflective mask, which mainly comprises the following steps: (A (B) plating an absorbing layer on the surface of the stainless steel substrate; (C) exposing and etching the absorbing layer to the stainless steel layer to produce a pattern of the reflective exposure reticle. The effect of the prior art: the conventional reflective substrate needs to restrict five different film materials, and the non-mineral steel substrate mask substrate of the present invention only needs to be coated with an absorption layer, and does not need to deposit a multilayer structure reflective film on the substrate. The etch stop layer and the absorbing layer can greatly shorten the substrate process, and the process time is shortened by one-fifth, plus only one layer is required. In the layer, the product yield can be increased from 95% to over 98%, so the output naturally increases by more than five times. In addition to the early reduction of the substrate material (stainless steel material is reduced by about 30/min compared to quartz or glass), the inventory cost can be reduced. In addition to one-off, on the other hand, omitting multiple membrane processes can provide higher yields, thus reducing the cost of non-performing rates. Because large quartz substrates cost between NT$100 million and NT$3 million, 95% yield. Representing a substrate loss rate of 5%, so the process risk of each piece of quartz substrate is about 5 to 150,000 yuan, compared to the lower ', the yield of the stainless steel substrate mask substrate is 98%, and the substrate price is 30 to 1. 〇〇10 million Taiwan dollars, so the process risk of each piece of stainless steel substrate is only about 1-2 million yuan. Traditional reticle substrate products in order to increase the reflectivity, must increase the density of the multilayer reflective film 'will inevitably produce on the substrate High compressive tension; high compressive tension tends to bend the surface of the substrate to form a convex surface, which also causes deformation of the pattern on the surface of the mask. In contrast, the stainless steel substrate mask substrate does not need to be plated with a high-density multilayer reflective film, so that the probability of deformation of the substrate after coating can be reduced. The conventional mask substrate product uses a quartz substrate glass substrate, which is easily deformed by the compression tension of the multilayer film. In addition, there is a 1298817 deformation inherent in the quartz substrate itself; since the quartz substrate has no ductility and plasticity, Therefore, a pressure correction film must be separately prepared to reduce the tension to correct the bending of the substrate surface, which will increase a process; the invention uses stainless steel (4) as a mask substrate because of its ductility and plasticity: Correct the deformation of the substrate so that the surface of the photomask substrate has a flatness of or better than nanometer. The best cutting shape of the competitive products of quartz substrate or glass substrate is square. The steel shell substrate of this month is very easy to cut into various shapes to suit various optical systems, in addition to stainless steel materials. Spreadability and plasticity, substrates of various curvatures can be plated for exposure systems that are diverging or concentrating. <Embodiment> As shown in the third drawing, a method for manufacturing a stainless steel substrate of a reflective reticle of the present invention mainly includes the following steps: (A) cleaning a stainless steel substrate (1 〇); The surface of the stainless steel substrate (1〇) is cleaned with a cleaning agent or pure water solution to remove particles on the surface of the stainless steel substrate (10), and the surface particle diameter is controlled to be less than 5 to 10/m, and the amount is lower than 〇·〇ι The stainless steel substrate (10) itself has a reflecting surface (11), and the reflectance of the reflecting surface (η) of the stainless steel substrate is at least higher than 35%. (Β) As shown in the fourth diagram, an absorbing layer (2〇) is plated on the reflective surface (11) of the surface of the stainless steel substrate (1〇); the absorbing layer (2〇) can be oxidized A material having a low reflectivity such as chrome, wherein the thickness of the absorbing layer is between about 18 Å and about 2,200 Å and the reflectance of the absorbing layer (20) to light of 600 to 800 nm Less than 10% or less; (C) as shown in the fourth panel, exposed and developed on the absorbing layer (20) until the stainless steel layer to produce a pattern of the reflective exposure mask; As shown in the fifth figure, it is a schematic diagram of the implementation structure of the present invention, and 1298817 must increase the density of the multilayer reflective film, which inevitably produces a high compressive tension on the substrate; and the compressive tension of the crucible easily makes the surface of the substrate Bending to form a convex surface also causes deformation of the pattern on the surface of the reticle. In contrast, the stainless steel substrate (10) does not need to be plated with a reflective film of a multilayer structure, so that the deformation probability of the substrate after coating can be lowered. (4) After the coating, the flatness of the substrate can be controlled: the conventional reticle substrate product uses a quartz substrate or a bismuth glass substrate, and is easily deformed by the compression tension of the multilayer film after coating, in addition to the inherent deformation of the quartz substrate itself. Existence; since the quartz substrate has no ductility and plasticity, it must be separately plated - a pressure correction film to reduce the tension to correct the bending of the substrate surface, which adds a process; the present invention uses a stainless steel material as a mask substrate because of It has ductility and plasticity, so the deformation of the substrate can be corrected after coating, so that the surface of the mask substrate has a flatness of 100 nm or better. (5) It is possible to plate a substrate of various shapes. · The best product of a quartz substrate or a glass substrate is a square shape. The non-fine material substrate of the present invention is capable of being cut into various shapes to suit various optical systems. In addition, because the stainless steel material has ductility and plasticity, it can be plated with various curvatures to suit the diverging or concentrating exposure system. Since the stainless steel substrate (10) itself has a reflectance of about 35% or more, the reflective mask substrate fabricated using the stainless steel substrate (10) does not need to be plated with a high-density reflective layer, thereby avoiding deformation of the substrate due to compressive tension; The stainless steel substrate (1〇) has a flatness that can modify the flatness of the «hiding, money-steps. More importantly, the =rust steel substrate (10) has low substrate cost and low manufacturing risk, and has the potential to replace traditional quartz or glass reticle substrates as materials commonly used by photomask manufacturers. In addition, the 'Wei-receiving layer (2G) can be added to the outside of the wire. When the non-thin substrate (10) has not been exposed and developed, it can be used on the outer surface of the absorption layer (10) and the non-clock steel substrate (10). The protection effect is formed, which is inadvertently scratched during transportation or adsorbed by dust particles, and can be matched with the next stage of the mask pattern process. In summary, this creation has a novel structure and the effect of progress. It is in line with the provisions of the Patent Law. It is an application in accordance with the law and is expected to grant patents as soon as possible. The applicant is fortunate. 1298817 ~ [Simple description of the diagram] The first diagram is a schematic diagram of the process of making a reflective mask substrate. The second figure is a schematic diagram of the action of the reflective reticle. The third figure is a schematic diagram of the production process of the present invention. The fourth A picture is a schematic diagram of the manufacturing operation of the stainless steel substrate (1). The fourth B picture is a schematic diagram of the manufacturing operation of the stainless steel substrate (2). The fifth drawing is a schematic view of the implementation structure of the present invention. The sixth drawing is a schematic view of the operation of the present invention. [Main component symbol description] • T-mine substrate (10) Reflective surface (11) Absorbing layer (20) Mask pattern (30)
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