JPH0695363A - Photomask blank, its production and photomask - Google Patents
Photomask blank, its production and photomaskInfo
- Publication number
- JPH0695363A JPH0695363A JP26973292A JP26973292A JPH0695363A JP H0695363 A JPH0695363 A JP H0695363A JP 26973292 A JP26973292 A JP 26973292A JP 26973292 A JP26973292 A JP 26973292A JP H0695363 A JPH0695363 A JP H0695363A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photomask
- silicon
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、フォトマスクブランク
及びその製造方法並びにフォトマスクに関し、さらに詳
しくは、ＫｒＦエキシマレーザ（波長 248nm）等を光源
とするステッパーに使用できるフォトマスク、その製造
に用いるフォトマスクブランク及びフォトマスクブラン
クの製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask blank, a method for manufacturing the same, and a photomask. More specifically, the present invention relates to a photomask that can be used in a stepper using a KrF excimer laser (wavelength 248 nm) as a light source, and used for manufacturing the same. The present invention relates to a photomask blank and a photomask blank manufacturing method.
【０００２】[0002]
【従来の技術】従来のフォトマスク、特にハードマスク
と一般に呼ばれるものは、透明ガラス基板表面に金属又
はそれに代わる遮光性物質の薄膜を設け、フォトリソグ
ラフィ技術によってこれをパターン化させたもので、上
記遮光性物質としては、クロム又はクロムの酸化物、窒
化物などクロム系の材質のものが使用されていた。2. Description of the Related Art Conventional photomasks, particularly those generally called hard masks, are those in which a thin film of a metal or a light-shielding substance instead of it is provided on the surface of a transparent glass substrate and patterned by a photolithography technique. As the light-shielding substance, a chromium-based material such as chromium or an oxide or nitride of chromium has been used.
【０００３】一方、ＩＣ、ＬＳＩ等の半導体素子の製造
に際し、レチクルと一般に呼ばれるフォトマスクのパタ
ーンをシリコンウェハー上に縮小投影露光するのにステ
ッパーが用いられるが、このステッパーの光源として従
来は、紫外線領域のｇ線（波長 436nm）又はｉ線（波長
365nm）が使用されていた。しかし、近年の半導体素子
の著しい高密度化に伴なって、より一層のパターンの微
細化が要求されるようになり、ステッパーの光源も従来
のものからより短波長の、例えばＫｒＦエキシマレーザ
（波長 248nm）あるいはＡｒＦエキシマレーザ（波長 1
93nm）等の使用が検討されてきている。On the other hand, in the production of semiconductor devices such as ICs and LSIs, steppers are used for reducing projection exposure of a pattern of a photomask generally called a reticle onto a silicon wafer. Conventionally, as a light source of the stepper, an ultraviolet ray is used. G-line (wavelength 436nm) or i-line (wavelength)
365nm) was used. However, with the recent remarkable densification of semiconductor elements, further miniaturization of patterns has been required, and the light source of the stepper has a shorter wavelength than that of the conventional one, for example, KrF excimer laser (wavelength). 248 nm) or ArF excimer laser (wavelength 1
(93 nm) and the like are being studied.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述の
クロム系の材質のものを遮光性薄膜に使用した従来のフ
ォトマスクは、ＫｒＦエキシマレーザー（波長 248nm）
に対する遮光性が不足しており、また照射損傷が生じて
パターンが劣化するという問題がある。However, the conventional photomask using the above-mentioned chrome-based material for the light-shielding thin film is a KrF excimer laser (wavelength 248 nm).
However, there is a problem that the pattern is deteriorated due to irradiation damage.
【０００５】したがって、従来のクロム系のフォトマス
クはＫｒＦとかＡｒＦの使用に代表されるエキシマレー
ザを光源とするステッパーには使用できない。Therefore, the conventional chromium-based photomask cannot be used for a stepper using an excimer laser, which is represented by the use of KrF or ArF, as a light source.
【０００６】また、最近ではフォトマスクに使用する透
明ガラス基板の厚さが0.09インチから0.18インチさらに
0.25インチへと傾向として厚いものにかわってきてお
り、これに伴ないフォトマスク製造の際のレジストベー
キング時の加熱効率が低下するという問題が生じてい
る。これは、レジストをベーキングする際には、フォト
マスクブランク上にレジストを塗布後、ホットプレート
に乗せるという作業を行なうが、特にクロム系の材質の
ものは熱線（赤外線）を通しにくいため、透明ガラス基
板を伝わってきた熱がクロム系の遮光性薄膜面で反射し
てしまって、その上のレジスト面まで熱が伝わりにくい
ことによる。Recently, the thickness of the transparent glass substrate used for the photomask is 0.09 inches to 0.18 inches.
The thickness tends to be 0.25 inch, and accordingly, the heating efficiency at the time of resist baking at the time of manufacturing a photomask is reduced. This is because when baking a resist, the photomask blank is coated with the resist and then placed on a hot plate. However, especially for chrome-based materials, it is difficult for heat rays (infrared rays) to pass through, so transparent glass is used. This is because the heat transmitted through the substrate is reflected by the surface of the chromium-based light-shielding thin film, and it is difficult for the heat to reach the resist surface above it.
【０００７】一方、遮光性薄膜としてクロム系以外の材
質のものを使用するフォトマスクも知られており、例え
ば特公昭62-37382号には、透明ガラス基板上にシリコン
膜を設け、その上に二酸化シリコン膜を設ける構成が開
示されている。しかしながら、この構成によると、最上
層の二酸化シリコン膜はガラス基板と同材質であるた
め、エッチングの際にガラス基板も一緒にエッチングさ
れてしまうという製造上の問題があり、フォトマスク製
造には特別の工程が必要となる。On the other hand, a photomask using a material other than chromium as the light-shielding thin film is also known. For example, in Japanese Patent Publication No. 62-37382, a silicon film is provided on a transparent glass substrate, and a silicon film is provided thereon. A structure in which a silicon dioxide film is provided is disclosed. However, according to this configuration, since the uppermost silicon dioxide film is made of the same material as the glass substrate, there is a manufacturing problem that the glass substrate is also etched during the etching, which is a special problem for photomask manufacturing. Process is required.
【０００８】本発明は、上記従来の課題に鑑みなされた
もので、ＫｒＦエキシマレーザ等の短波長光を光源とす
るステッパーに使用でき、しかも基板の厚板化に伴なう
従来の問題を解消して生産性を高めることが可能なフォ
トマスクブランク及びその製造方法並びにフォトマスク
を提供することを目的とする。The present invention has been made in view of the above conventional problems, and can be used for a stepper using a short wavelength light such as a KrF excimer laser as a light source, and solves the conventional problems associated with the thickening of a substrate. It is an object of the present invention to provide a photomask blank capable of increasing productivity, a method for manufacturing the same, and a photomask.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するた
め、請求項１は、透明基板上に、シリコンに対する酸素
の含有比（原子数比）Ｓｉ／Ｏが１／０〜１／1.5 であ
る組成からなる遮光性薄膜を設け、その上にシリコンの
窒化物又は炭化物からなる反射防止膜を設けたフォトマ
スクブランクである。In order to solve the above problems, the first aspect of the present invention is that the content ratio of oxygen to silicon (atomic ratio) Si / O is 1/0 to 1 / 1.5 on the transparent substrate. This is a photomask blank in which a light-shielding thin film made of a composition is provided, and an antireflection film made of silicon nitride or carbide is provided thereon.
【００１０】請求項２は、透明基板上に、シリコンの窒
化物又は炭化物からなる第１の反射防止膜を設け、その
上にシリコンに対する酸素の含有比（原子数比）Ｓｉ／
Ｏが１／０〜１／1.5 である組成からなる遮光性薄膜を
設け、さらにその上にシリコンの窒化物又は炭化物から
なる第２の反射防止膜を設けたフォトマスクブランクで
ある。According to a second aspect of the present invention, a first antireflection film made of silicon nitride or carbide is provided on a transparent substrate, and an oxygen content ratio (atomic ratio) Si / Si on the first antireflection film.
This is a photomask blank in which a light-shielding thin film having a composition in which O is 1/0 to 1 / 1.5 is provided, and a second antireflection film made of silicon nitride or carbide is further provided thereon.
【００１１】請求項３は、請求項１又は２の透明基板の
厚さが0.25インチ（6.35mm）以上であるフォトマスクブ
ランクである。A third aspect of the present invention is a photomask blank in which the transparent substrate according to the first or second aspect has a thickness of 0.25 inch (6.35 mm) or more.
【００１２】請求項４は、透明基板上に、シリコンに対
する酸素の含有比（原子数比）Ｓｉ／Ｏが１／０〜１／
1.5 である組成からなる遮光性薄膜及びシリコンの窒化
物又は炭化物からなる反射防止膜をそれぞれスパッタリ
ング法により形成するフォトマスクブランクの製造方法
である。According to a fourth aspect, the content ratio of oxygen to silicon (atomic ratio) Si / O is 1/0 to 1 / on the transparent substrate.
This is a method for manufacturing a photomask blank, in which a light-shielding thin film having a composition of 1.5 and an antireflection film made of silicon nitride or carbide are formed by a sputtering method.
【００１３】請求項５は、請求項４の遮光性薄膜及び反
射防止膜を同一スパッタリングチャンバ内にて連続的に
形成するフォトマスクブランクの製造方法である。A fifth aspect of the present invention is a method of manufacturing a photomask blank, wherein the light-shielding thin film and the antireflection film of the fourth aspect are continuously formed in the same sputtering chamber.
【００１４】請求項６は、請求項１，２又は３のフォト
マスクブランクをパターン化してなるフォトマスクであ
る。A sixth aspect of the present invention is a photomask obtained by patterning the photomask blank of the first, second or third aspect.
【００１５】以下、本発明の構成をさらに詳細に説明す
る。The structure of the present invention will be described in more detail below.
【００１６】図１及び図２は、それぞれ本発明のフォト
マスクブランクの構成を示す断面図であるが、図１は、
透明基板１上に遮光性薄膜２を設け、その上に反射防止
膜３を設けたもので、図２は、透明基板１上に反射防止
膜４を介して、その上に遮光性薄膜２及び反射防止膜３
をそれぞれ設けたものである。1 and 2 are cross-sectional views showing the structure of the photomask blank of the present invention.
The light-shielding thin film 2 is provided on the transparent substrate 1, and the antireflection film 3 is provided thereon. In FIG. 2, the light-shielding thin film 2 and the antireflection film 4 are provided on the transparent substrate 1 via the antireflection film 4. Antireflection film 3
Are provided respectively.
【００１７】ここで、透明基板１は、例えば、石英ガラ
ス、ソーダライムガラス、硼硅酸ガラス、水晶、サファ
イヤ等、光学的に透明な任意材料からなり、その厚みに
は特に制約はないが、通常0.09インチ（約 2.3mm）〜0.
25インチ（6.35mm）程度のものが用いられる。本発明で
は、前記レジストをベーキングする際に、特に板厚が厚
いものに対して効果が高く優れた加熱効率が得られるこ
とから、特に板厚の厚いもの（例えば0.25インチ以上）
を用いるのが望ましい。Here, the transparent substrate 1 is made of an optically transparent arbitrary material such as quartz glass, soda lime glass, borosilicate glass, crystal, sapphire, etc., and its thickness is not particularly limited. Normally 0.09 inches (about 2.3 mm) to 0.
A size of about 25 inches (6.35 mm) is used. In the present invention, when baking the resist, a particularly thick plate (for example, 0.25 inch or more) is obtained because it is highly effective for a thick plate and excellent heating efficiency can be obtained.
It is preferable to use.
【００１８】また、遮光性薄膜２は、前述の如く、シリ
コンに対する酸素の含有比（原子数比）Ｓｉ／Ｏが１／
０〜１／1.5 である組成からなるが、特に１／０〜１／
1.4であることが好ましい。シリコンに対する酸素の含
有比が１／1.5 よりも多くなると、ＫｒＦエキシマレー
ザの波長 248nmおよびｉ線の波長 365nmでの透過率が増
加し、十分な遮光性が得られなくなる。仮に、この場
合、膜厚を増やすことにより遮光性をある程度改善しよ
うとすると、成膜時間が長くなり過ぎること、膜厚増加
による遮光性増加の程度が弱まることなどから、膜厚の
み増加させることには限界がある。As described above, the light-shielding thin film 2 has an oxygen content ratio (atomic ratio) Si / O to silicon of 1 /.
The composition is 0 to 1 / 1.5, but especially 1/0 to 1 /
It is preferably 1.4. When the content ratio of oxygen to silicon is more than 1 / 1.5, the transmittance of the KrF excimer laser at a wavelength of 248 nm and the i-line at a wavelength of 365 nm increases, and sufficient light shielding properties cannot be obtained. In this case, if it is attempted to improve the light-shielding property to some extent by increasing the film thickness, the film formation time becomes too long, and the degree of the light-shielding property increase due to the film thickness increase is weakened. Is limited.
【００１９】この遮光性薄膜２を形成するにはスパッタ
リング法を採用することが出来る。具体的には、シリコ
ンもしくはシリコンに数パーセント程度のボロンもしく
はリン等の不純物を含むターゲットを用い、主にアルゴ
ンガス雰囲気中で所定の条件設定によりスパッタリング
を行なう。To form this light-shielding thin film 2, a sputtering method can be adopted. Specifically, sputtering is performed by using silicon or a target containing impurities such as boron or phosphorus of about several percent in silicon, and mainly by setting predetermined conditions in an argon gas atmosphere.
【００２０】遮光性薄膜２の厚さは 500Å以上、好まし
くは 800Å〜1500Å程度である。 500Åよりも薄いと、
成膜時に厚さムラやピンホール等の欠陥が発生しやすく
なる。但し、該欠陥を成膜技術の向上等により克服でき
れば、遮光性薄膜２の厚さは500Åより薄くても支障は
ない。The light-shielding thin film 2 has a thickness of 500 Å or more, preferably about 800 Å to 1500 Å. If it is thinner than 500Å,
Defects such as uneven thickness and pinholes are likely to occur during film formation. However, if the defect can be overcome by improving the film forming technique, the thickness of the light-shielding thin film 2 can be less than 500Å.
【００２１】図４は、こうして形成される本発明の遮光
性薄膜の一例の分光透過率曲線を示すもので、同図中、
Ａはアルゴンガスのみでスパッタリングを行なった場合
であり、形成された膜のシリコンに対する酸素の含有比
（原子数比）Ｓｉ／Ｏは１／０である。Ｂはアルゴンガ
スに酸素を少量流入させてスパッタリングを行なった場
合（後述の実施例参照）であり、形成された膜のシリコ
ンに対する酸素の含有比（原子数比）Ｓｉ／Ｏは１／1.
3 である。Ａ及びＢの曲線から明らかなように、本発明
の遮光性薄膜は、波長 248nmでは完全な遮光性が得ら
れ、また波長 365nmにおいても十分な遮光性が得られ
る。したがって、ＫｒＦエキシマレーザを光源とするス
テッパーに対応できるのは勿論のこと、現状のｉ線（ 3
65nm）を光源とするステッパーにも使用可能である。ま
た、ＫｒＦエキシマレーザよりも短波長の光源（例えば
ＡｒＦレーザ）を使用する場合にも対応可能である。FIG. 4 shows a spectral transmittance curve of an example of the light-shielding thin film of the present invention thus formed.
A represents the case where sputtering was performed only with argon gas, and the oxygen content ratio (atomic ratio) Si / O in the formed film was 1/0. B is the case where a small amount of oxygen was introduced into argon gas for sputtering (see Examples described later), and the oxygen content ratio (atomic ratio) Si / O to silicon in the formed film was 1/1.
3 As is clear from the curves A and B, the light-shielding thin film of the present invention has a perfect light-shielding property at a wavelength of 248 nm and a sufficient light-shielding property at a wavelength of 365 nm. Therefore, it can be applied not only to steppers using a KrF excimer laser as a light source, but also to the current i-line (3
It can also be used for steppers with a 65 nm light source. It is also possible to use a light source having a shorter wavelength than the KrF excimer laser (for example, ArF laser).
【００２２】また、反射防止膜３，４は、前述の如く、
シリコンの窒化物又は炭化物からなり、数十〜数百Å程
度の厚さが好ましい。特にシリコンの炭化物は導電性を
有するので、フォトマスク製造の際の電子線描画時のチ
ャージアップ現象を防止できる。図２に示す構造の場
合、遮光性薄膜２の上に位置する反射防止膜３と下に位
置する反射防止膜４は同一の材質でもよいし異なる材質
でもよい。例えば、下の反射防止膜４がシリコンの炭化
物からなり、上の反射防止膜３がシリコンの窒化物から
なる如きである。この反射防止膜を形成するには上記の
遮光性薄膜２と同様スパッタリング法を採用することが
できる。具体的には、シリコンターゲットを用い、所定
の条件設定を行ない、アルゴンガスに窒素ガスあるいは
ＣＨ4 ガス等を流入させた状態の雰囲気中でスパッタリ
ングを行なう。The antireflection films 3 and 4 are, as described above,
It is made of silicon nitride or carbide, and preferably has a thickness of several tens to several hundreds of liters. In particular, since silicon carbide has conductivity, it is possible to prevent a charge-up phenomenon at the time of drawing an electron beam in manufacturing a photomask. In the case of the structure shown in FIG. 2, the antireflection film 3 located on the light-shielding thin film 2 and the antireflection film 4 located below may be made of the same material or different materials. For example, the lower antireflection film 4 is made of silicon carbide and the upper antireflection film 3 is made of silicon nitride. In order to form this antireflection film, a sputtering method can be adopted as in the case of the light-shielding thin film 2 described above. Specifically, a silicon target is used, predetermined conditions are set, and sputtering is performed in an atmosphere in which nitrogen gas or CH 4 gas is introduced into argon gas.
【００２３】このように、遮光性薄膜２及び反射防止膜
３，４はいずれもシリコン系の材質で構成されているた
め、スパッタリング法を採用して成膜する場合、基本的
には注入ガスを変更するだけで同一チャンバ内にて連続
的に成膜することが出来る。したがって、成膜するごと
に別のチャンバへ移す必要がなくなり、生産性が高ま
り、別のチャンバへ移す際に生じるゴミの付着の問題が
無くなる。また、膜同志の密着性及び膜と透明基板１と
の密着性がいずれも良好である。As described above, since the light-shielding thin film 2 and the antireflection films 3 and 4 are both made of a silicon-based material, when a film is formed by using the sputtering method, basically, an injection gas is used. Films can be continuously formed in the same chamber simply by changing them. Therefore, it is not necessary to transfer the film to another chamber each time the film is formed, the productivity is improved, and the problem of dust adhesion when transferring the film to another chamber is eliminated. Further, the adhesion between the films and the adhesion between the film and the transparent substrate 1 are both good.
【００２４】次に、図１に示す構成のフォトマスクブラ
ンクを用いてフォトマスクを製造する方法の一例を、図
３（ａ）〜（ｆ）に基いて述べる。Next, an example of a method for manufacturing a photomask using the photomask blank having the structure shown in FIG. 1 will be described with reference to FIGS.
【００２５】フォトマスクブランクの表面に必要な洗浄
を行なった後、感光性樹脂をスピンナー等を用いて塗布
してレジスト層５を形成する（図３（ａ）参照）。After the surface of the photomask blank is washed as necessary, a photosensitive resin is applied using a spinner or the like to form a resist layer 5 (see FIG. 3A).
【００２６】次に、ホットプレート６上でプリベークを
行なう（同（ｂ）参照）。ベーキング温度、時間等は任
意に設定される。なお、本発明のフォトマスクブランク
の遮光性薄膜２及び反射防止膜３，４はシリコン系の材
質で熱線（赤外線）を通しやすく、透明基板１を伝わっ
てきた熱が十分レジスト層５に伝わるため、板厚の厚い
（例えば0.25インチ）透明基板１を用いても、従来のよ
うなベーキング時の加熱効率の低下する不都合は起こら
ない。Next, prebaking is performed on the hot plate 6 (see (b) of the same). The baking temperature, time, etc. are set arbitrarily. The light-shielding thin film 2 and the antireflection films 3 and 4 of the photomask blank of the present invention are made of a silicon-based material so that heat rays (infrared rays) can easily pass therethrough, and the heat transmitted through the transparent substrate 1 is sufficiently transmitted to the resist layer 5. Even if the transparent substrate 1 having a large plate thickness (for example, 0.25 inch) is used, the disadvantage that the heating efficiency at the time of baking is lowered unlike the conventional case does not occur.
【００２７】プリベーク後、所望のパターンを露光し、
所定の現像液を用いて露光部のレジスト層を除去（ポジ
型感材の場合）し、パターン化されたレジスト層５′を
形成する（同（ｃ）参照）。パターンの露光は微細パタ
ーンを形成するためには電子線露光を採用することが望
ましい。勿論その場合には上記の感光性樹脂として感電
子線レジスト樹脂を使用する。After prebaking, exposing the desired pattern,
The resist layer in the exposed area is removed using a predetermined developing solution (in the case of a positive type photosensitive material) to form a patterned resist layer 5 '(see (c)). The pattern exposure is preferably electron beam exposure in order to form a fine pattern. Of course, in that case, an electron beam resist resin is used as the photosensitive resin.
【００２８】次いで、再びホットプレート６上でポスト
ベークを行なう（同（ｄ）参照）。Then, post-baking is performed again on the hot plate 6 (see (d) of the same figure).
【００２９】次に、エッチングにより、反射防止膜３及
び遮光性薄膜２をパターン化３′，２′する（同（ｅ）
参照）。エッチング方法はウェットエッチング法、ドラ
イエッチング法のいずれを採用してもかまわないが、高
精度化の点ではドライエッチング法が望ましい。ウェッ
トエッチング法の場合、エッチング液としては、65％Ｈ
ＮＯ3 、純水及び40％ＨＦの 100：40：６（体積比）の
混合液などを使用する。また、ドライエッチング法の場
合、エッチングガスとしては、Ｃ2 Ｃｌ2 Ｆ4，ＳＦ6
などを使用する。Next, the antireflection film 3 and the light-shielding thin film 2 are patterned 3'and 2'by etching (the same (e)).
reference). The etching method may be either a wet etching method or a dry etching method, but the dry etching method is preferable in terms of high accuracy. In the case of the wet etching method, the etching liquid is 65% H
A mixture of 100: 40: 6 (volume ratio) of NO 3 , pure water and 40% HF is used. Further, in the case of the dry etching method, the etching gas is C 2 Cl 2 F 4 , SF 6
And so on.
【００３０】しかる後、残存していたレジスト層５′を
除去し、フォトマスクが出来上がる（同（ｆ）参照）。Thereafter, the remaining resist layer 5'is removed, and a photomask is completed (see (f) in the same).
【００３１】[0031]
【作用】本発明によると、前述したように、そのパター
ン部分がＫｒＦエキシマレーザの波長 248nmやさらに短
波長の領域において完全な遮光性を有する。また、ｉ線
すなわち 365nmにおいても十分な遮光性を有する。ま
た、遮光性薄膜および反射防止膜がいずれもシリコン系
の材質で構成されているため、同一チャンバ内での連続
的なスパッタリングが行なえ、生産性の向上、工程中の
ゴミの付着の低減、膜同士および基板との密着性の向上
を図ることが出来る。また、遮光性薄膜及び反射防止膜
がいずれもシリコン系の材質で構成されているため、熱
線（赤外線）を通しやすく、ベーキング時の加熱効率の
向上が図れる。According to the present invention, as described above, the pattern portion has a perfect light-shielding property in the region of the wavelength of 248 nm of the KrF excimer laser or a shorter wavelength. Further, it has a sufficient light-shielding property even for i-line, that is, 365 nm. Moreover, since both the light-shielding thin film and the antireflection film are made of a silicon-based material, continuous sputtering can be performed in the same chamber, improving productivity, reducing dust adhesion during the process, It is possible to improve the adhesion between each other and the substrate. Further, since both the light-shielding thin film and the antireflection film are made of a silicon-based material, heat rays (infrared rays) can easily pass therethrough, and the heating efficiency during baking can be improved.
【００３２】[0032]
【実施例】次に、本発明の具体的実施例を説明するが、
本発明はこれらの態様に限定されるものではない。EXAMPLES Next, specific examples of the present invention will be described.
The present invention is not limited to these aspects.
【００３３】洗浄済の石英ガラス基板（６インチ角、0.
25インチ厚）上に、シリコンターゲットを用い、ＲＦマ
グネトロンスパッタリング装置にて、パワー 100Ｗ、ア
ルゴンガス流量19.4ＳＣＣＭ、酸素ガス流量 0.6ＳＣＣ
Ｍで、約15分間スパッタリングを行ない、約1500Å厚の
シリコン遮光膜を形成した。このときの背圧は約 2.0×
10-4Ｐａ、スパッタ圧は約 2.0×10-1Ｐａであった。形
成されたシリコン遮光膜の分光透過率曲線を図４のＢに
示す。また、ＥＳＣＡで定量分析を行なったところ、こ
の形成されたシリコン遮光膜のシリコンに対する酸素の
含有比Ｓｉ／Ｏは１／1.3 であった。続いて、パワー 1
00Ｗ、上記酸素ガスの代わりに窒素ガスを上記アルゴン
ガス中に数十ＳＣＣＭ流入させて数分間スパッタリング
を行ない、上記シリコン遮光膜上に約 100Å厚の窒化シ
リコン（ＳｉＮ4 ）膜を形成し、フォトマスクブランク
を作製した。Cleaned quartz glass substrate (6 inch square, 0.
25 inch thick), using a silicon target, using an RF magnetron sputtering device, power 100 W, argon gas flow rate 19.4 SCCM, oxygen gas flow rate 0.6 SCC
Sputtering was carried out for about 15 minutes with M to form a silicon light-shielding film having a thickness of about 1500Å. The back pressure at this time is about 2.0 ×
The sputtering pressure was 10 −4 Pa and the sputtering pressure was about 2.0 × 10 −1 Pa. The spectral transmittance curve of the formed silicon light-shielding film is shown in B of FIG. Further, when quantitative analysis was performed by ESCA, the oxygen content ratio Si / O to silicon of the formed silicon light-shielding film was 1 / 1.3. Then power 1
00 W, nitrogen gas instead of the above oxygen gas was flowed into the argon gas for several tens of SCCM, and sputtering was performed for several minutes to form a silicon nitride (SiN 4 ) film with a thickness of about 100 Å on the above silicon light-shielding film. A mask blank was produced.
【００３４】このフォトマスクブランクにポリメタクリ
ル酸メタクリレート（ＰＭＭＡ）（東京応化工業（株）
製 電子線レジストＯＥＢＲ−1000）を約5000Å厚にス
ピンナー塗布し、 170℃に設定したホットプレートで約
10分間プリベークを行なった。Polymethacrylate (PMMA) (Tokyo Ohka Kogyo Co., Ltd.) was used for this photomask blank.
Electron beam resist OEBR-1000) was spinner coated to a thickness of about 5000Å, and a hot plate set at 170 ℃ was used to
Prebaked for 10 minutes.
【００３５】次に、電子線描画装置ＭＥＢＥＳ III（Ｅ
ＴＥＣ社製）でパターンの描画を行なった。このときの
加速電圧は10ＫＶ、ドーズ量は約８×10-5Ｃ／cm2 とし
た。Next, the electron beam lithography system MEBES III (E
A pattern was drawn by TEC). The acceleration voltage at this time was 10 KV, and the dose amount was about 8 × 10 -5 C / cm 2 .
【００３６】描画後、所定の現像処理を行ない、露光部
のレジスト層を除去してレジストパターンを得、 170℃
に設定したホットプレートで約10分間ポストベークを行
なった。After the drawing, a predetermined developing process is performed to remove the resist layer in the exposed portion to obtain a resist pattern, and 170 ° C.
Post baking was performed for about 10 minutes on the hot plate set to.
【００３７】次に、このレジストパターンを形成したマ
スクブランクを平行平板型反応性イオンエッチング装置
にセットし、Ｃ2 Ｃｌ2 Ｆ4 ガスを用い、圧力約20Ｐ
ａ、高周波電力密度約0.15Ｗ／cm2 で数分間、シリコン
遮光膜のエッチングを行なった。この場合、シリコン遮
光膜の上の窒化シリコン膜は薄いため、物理的なエネル
ギーで一緒にエッチングされてしまう。Next, the mask blank on which this resist pattern is formed is set in a parallel plate type reactive ion etching apparatus, C 2 Cl 2 F 4 gas is used, and the pressure is about 20 P.
a, the silicon light-shielding film was etched at a high frequency power density of about 0.15 W / cm 2 for several minutes. In this case, since the silicon nitride film on the silicon light-shielding film is thin, it is etched together with physical energy.
【００３８】エッチング終了後、メチルエチルケトン中
に浸漬、攪拌して、残存していたレジスト層を除去し、
洗浄および乾燥を行なって、フォトマスク（レチクル）
を得た。After the etching is completed, the resist layer which remains is immersed in methyl ethyl ketone and stirred to remove the remaining resist layer.
After cleaning and drying, photomask (reticle)
Got
【００３９】この得られたフォトマスク（レチクル）を
用いて、ＫｒＦエキシマレーザを光源とするステッパー
によりシリコンウェハー上に縮小投影露光を行なったと
ころ、シリコンウェハー上に高精度微細パターンを形成
出来た。Using the obtained photomask (reticle), reduction projection exposure was performed on a silicon wafer by a stepper using a KrF excimer laser as a light source, and a highly precise fine pattern could be formed on the silicon wafer.
【００４０】[0040]
【発明の効果】以上詳細に説明したように、本発明のフ
ォトマスクによれば、透明基板上に設けたシリコンに対
する酸素の含有比Ｓｉ／Ｏが１／０〜１／1.5 である組
成からなる遮光性薄膜がＫｒＦエキシマレーザの波長 2
48nmにて完全な遮光性を有するので、ＫｒＦエキシマレ
ーザを光源とするステッパー対応のフォトマスクとして
使用することが可能になった。As described in detail above, according to the photomask of the present invention, the composition of which the oxygen content ratio Si / O to silicon provided on the transparent substrate is 1 / 0-1 / 1.5. The light-shielding thin film has a wavelength of KrF excimer laser 2
Since it has a perfect light-shielding property at 48 nm, it became possible to use it as a photomask corresponding to a stepper using a KrF excimer laser as a light source.
【００４１】また、本発明のフォトマスクは、現在のｉ
線（ 365nm）を光源とするステッパーやＫｒＦエキシマ
レーザよりも短波長光を光源とするステッパーにも対応
でき、現在のみならず将来にわたって広く利用が可能で
ある。Further, the photomask of the present invention has the i
It can be used not only in the present but also in the future, as it can also be used for steppers using a line (365 nm) as a light source and steppers using a light having a shorter wavelength than the KrF excimer laser.
【００４２】また、本発明のフォトマスクブランクによ
れば、遮光性薄膜及び反射防止膜はシリコン系の材質で
熱線（赤外線）を通しやすく、ベーキング加熱した熱が
最上層のレジスト層に十分伝わるため、傾向となりつつ
ある板厚の厚い透明基板を用いても、従来のようなベー
キング時の加熱効率の低下する不都合は起こらない。Further, according to the photomask blank of the present invention, the light-shielding thin film and the antireflection film are made of a silicon-based material so that heat rays (infrared rays) can easily pass therethrough, and the heat of baking is sufficiently transmitted to the uppermost resist layer. Even if a transparent substrate having a thick plate thickness, which is becoming a tendency, is used, there is no inconvenience that the heating efficiency is lowered during baking as in the conventional case.
【００４３】さらに、本発明のフォトマスクブランク
は、スパッタリング法により同一チャンバ内で連続的に
成膜して製造することが出来るため、生産性を高めるこ
とが可能であり、別のチャンバへ移すときに生じるゴミ
の付着がなくなる。また、膜の密着性が良好で、膜剥れ
等の不都合が低減される。Furthermore, since the photomask blank of the present invention can be manufactured by continuously forming a film in the same chamber by the sputtering method, it is possible to improve the productivity and to transfer it to another chamber. The adherence of dust that occurs on the In addition, the adhesion of the film is good, and problems such as film peeling are reduced.
【図１】本発明のフォトマスクブランクの構成を示す断
面図である。FIG. 1 is a sectional view showing a configuration of a photomask blank of the present invention.
【図２】本発明のフォトマスクブランクの別の構成を示
す断面図である。FIG. 2 is a cross-sectional view showing another configuration of the photomask blank of the present invention.
【図３】本発明のフォトマスクの製造方法の一例を工程
順に示す断面図である。FIG. 3 is a cross-sectional view showing an example of a method for manufacturing a photomask of the present invention in the order of steps.
【図４】遮光性薄膜の分光透過率曲線を示す図である。FIG. 4 is a diagram showing a spectral transmittance curve of a light-shielding thin film.
１ 透明基板 ２ 遮光性薄膜 ３，４ 反射防止膜 ５ レジスト層 ６ ホットプレート 1 transparent substrate 2 light-shielding thin film 3, 4 antireflection film 5 resist layer 6 hot plate
Claims (6)
含有比（原子数比）Ｓｉ／Ｏが１／０〜１／1.5 である
組成からなる遮光性薄膜を設け、その上にシリコンの窒
化物又は炭化物からなる反射防止膜を設けたことを特徴
とするフォトマスクブランク。1. A transparent substrate is provided with a light-shielding thin film having a composition in which the oxygen content ratio (atomic ratio) Si / O to silicon is 1/0 to 1 / 1.5, and silicon nitride is provided thereon. Alternatively, a photomask blank provided with an antireflection film made of carbide.
化物からなる第１の反射防止膜を設け、その上にシリコ
ンに対する酸素の含有比（原子数比）Ｓｉ／Ｏが１／０
〜１／1.5 である組成からなる遮光性薄膜を設け、さら
にその上にシリコンの窒化物又は炭化物からなる第２の
反射防止膜を設けたことを特徴とするフォトマスクブラ
ンク。2. A first antireflection film made of a silicon nitride or a carbide is provided on a transparent substrate, and the oxygen content ratio (atomic ratio) Si / O to silicon is 1/0 on the first antireflection film.
A photomask blank comprising a light-shielding thin film having a composition of about 1 / 1.5 and a second antireflection film made of a silicon nitride or a carbide thereon.
mm）以上であることを特徴とする請求項１又は２記載の
フォトマスクブランク。3. The transparent substrate has a thickness of 0.25 inch (6.35 inches).
mm) or more, The photomask blank of Claim 1 or 2 characterized by the above-mentioned.
含有比（原子数比）Ｓｉ／Ｏが１／０〜１／1.5 である
組成からなる遮光性薄膜及びシリコンの窒化物又は炭化
物からなる反射防止膜をそれぞれスパッタリング法によ
り形成することを特徴とするフォトマスクブランクの製
造方法。4. A light-shielding thin film having a composition in which the content ratio of oxygen to silicon (atomic ratio) Si / O is 1/0 to 1 / 1.5 and a reflection of a silicon nitride or carbide on a transparent substrate. A method for manufacturing a photomask blank, wherein each of the protective films is formed by a sputtering method.
一スパッタリングチャンバ内にて連続的に形成すること
を特徴とする請求項４記載のフォトマスクブランクの製
造方法。5. The method of manufacturing a photomask blank according to claim 4, wherein the light-shielding thin film and the antireflection film are continuously formed in the same sputtering chamber.
ンクをパターン化してなることを特徴とするフォトマス
ク。6. A photomask obtained by patterning the photomask blank according to claim 1, 2, or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26973292A JPH0695363A (en) | 1992-09-11 | 1992-09-11 | Photomask blank, its production and photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26973292A JPH0695363A (en) | 1992-09-11 | 1992-09-11 | Photomask blank, its production and photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0695363A true JPH0695363A (en) | 1994-04-08 |
Family
ID=17476399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26973292A Pending JPH0695363A (en) | 1992-09-11 | 1992-09-11 | Photomask blank, its production and photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0695363A (en) |
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| US7659039B2 (en) | 2005-06-08 | 2010-02-09 | Canon Kabushiki Kaisha | Near-field exposure mask, method of producing that mask, near-field exposure apparatus having that mask, and resist pattern forming method |
| US7767366B2 (en) | 2006-03-10 | 2010-08-03 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| US7767367B2 (en) | 2006-03-10 | 2010-08-03 | Toppan Printing Co., Ltd. | Photomask blank and photomask making method |
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| US8003284B2 (en) | 2006-03-10 | 2011-08-23 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| US8012654B2 (en) | 2006-03-10 | 2011-09-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| KR100947166B1 (en) * | 2006-03-10 | 2010-03-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Photomask blank and photomask making method |
| JP2007241060A (en) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | Photomask blank and method for manufacturing photomask |
| US7790339B2 (en) | 2006-04-21 | 2010-09-07 | Shin-Etsu Chemical Co., Ltd. | Photomask blank |
| JP4697495B2 (en) * | 2010-05-28 | 2011-06-08 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
| JP2010237692A (en) * | 2010-05-28 | 2010-10-21 | Shin-Etsu Chemical Co Ltd | Photomask blank and method of manufacturing photomask |
| JP2012032823A (en) * | 2011-09-21 | 2012-02-16 | Shin Etsu Chem Co Ltd | Method of manufacturing photomask blank and binary mask |
| JP2012003287A (en) * | 2011-09-21 | 2012-01-05 | Shin Etsu Chem Co Ltd | Method for manufacturing photo mask, and photo mask |
| WO2022004456A1 (en) * | 2020-06-30 | 2022-01-06 | アルバック成膜株式会社 | Mask blank manufacturing method, mask blank, photomask manufacturing method, and photomask |
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