TWI298351B - Bonded structure for a thin-film circuit - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film circuit constituting a display device, and more particularly to a bonded structure of a thin film circuit having a transparent electrode and a sintered alloy electrode in a liquid crystal display. [Prior Art] For display devices of information equipment, AV equipment, home electric appliances, and the like, a display such as a Thin Film Transistor (TFT) is currently widely used. For such a display, there is an active matrix liquid crystal display (LCD) represented by a thin film transistor, a self-luminous organic light emitting diode (〇ELD), or an organic light emitting diode using a passive matrix method. Various element structures such as a body are proposed, which are constructed by a thin film circuit formed of a film to perform control of display of the aforementioned elements. In the element structure of each of the above various display devices, a transparent electrode typified by an indium tin oxide electrode and a conductive electrode for wiring are often used. The construction of such a thin film circuit is an important factor that directly affects the quality of the display device, power consumption, and product cost, and such structural improvement is increasingly required in the present state. For the construction of this thin film circuit, a liquid crystal display (LCD) is taken as an example, and the matters desired to be improved will be specifically described below. A liquid crystal display (LCD) having a tendency to occupy the center of the display device has a high-definition and low-cost waking-up. Therefore, a thin film circuit of a thin film transistor is widely used. Moreover, Ming alloy was used as the wiring material for this film 2169-6972-PF 5 1298351 circuit. In the thin film circuit such as a thin film transistor, when an electrode layer for forming a wiring or an electrode is formed, an aluminum alloy film is often used. This is because the button, chromium, titanium, and alloy thereof are conventionally used. Since the specific resistance of the melting point material is high, etc., it is a substitute for a material having a lower specific resistance and easier wiring processing, which is a remarkable result. However, in the case where the electrode layer (aluminum alloy electrode layer) is formed of the aluminum alloy film, the following phenomenon is known to occur in the contact portion of the transparent electrode of the indium tin oxide electrode layer or the like in the liquid crystal display. When the aluminum alloy electrode layer is directly bonded to the indium tin oxide electrode layer, due to the difference in electrochemical characteristics of the two layers, an electrochemical reaction occurs on the bonding interface of the two layers, thereby causing damage of the bonding interface or The increase in impedance value. For this reason, when an aluminum alloy electrode layer is used for a liquid crystal display element, it is necessary to form a so-called cap layer (or a contact barrier layer) formed of molybdenum or chromium, etc. When the term "cover layer" is used below, the contact block is included. The meaning of the layer). (For example, refer to Non-Patent Document 1) [Non-Patent Document 1] edited by Uchida Natsuo, "Next Generation Liquid Crystal Display Technology", First Edition, Industrial Investigation Association Co., Ltd., November 1994 i 曰, page 36 to 38 A thin film transistor having an aluminum alloy electrode layer therein must be provided with a cap layer mainly composed of molybdenum, chromium or the like. In the case where an aluminum alloy film is used in the thin film transistor constituent material, since the cap layer is inevitably required to be formed, the laminated structure is complicated, resulting in an increase in production cost. Moreover, recently, among the materials constituting the cap layer, there has been a market trend to exclude the use of chromium, and the technique for forming a ruthenium layer has begun to impose a large limitation. 2169-6972-PF 6 1298351 • However, in the recent thin film transistor manufacturing technology, there is also a manufacturing technique that advocates the elimination of the above cap layer. For example, in Patent Document 1, a hypothetical aluminum wiring film which can be directly bonded to an indium tin oxide electrode layer and a sputtering target relating thereto are disclosed. In Patent Document 1, an aluminum wiring film contains a predetermined amount of an element for forming an aluminum and an intermetallic compound or an element having a standard electrode potential higher than aluminum, carbon, oxygen, nitrogen, hydrogen, etc. in aluminum. The result of the layer omission. [Patent Document 1] International Publication No. WO97/1 3885 No. 'Patent Document 2 discloses a display device using an aluminum alloy film and a manufacturing technique thereof, which can directly contact an aluminum alloy film with a transparent electrode film, and The barrier metal can be omitted. This Patent Document 2 is a part or all of the alloy components constituting the aluminum alloy film, and is present as a precipitate or a concentrated layer on the interface where the aluminum alloy film is in direct contact with the halogen electrode, thereby saving/slightly blocking the metal. (cover layer). [Patent Document 2] Japanese Patent Laid-Open No. 20 04-214606. This prior art, substantially the majority of the exemplified aluminum alloys, focuses on alloying elements or precipitates (for example, intermetallic compounds) in the alloy, and The possibility of joining. [Problems to be Solved by the Invention] However, 'there are various kinds of compositions of aluminum alloys or precipitates (intermetallic compounds) in aluminum alloys', which are known from the above-mentioned patent document 1 or above In Patent Document 2, it is difficult to confirm the estimation that the presence of various alloying elements or intermetallic compounds contributes to direct bonding. That is, in such prior art, the alloying elements or precipitates in the aluminum alloy are based on what kind of 2169-6972-PF 7 1298351 to thereby suppress the interfacial reaction at the time of direct bonding, and this phenomenon is not particularly shown. Description. For this purpose, the development of a liquid crystal display element which may omit the cap layer is not specifically indicated as to how to suppress the interface reaction of the direct bonding. Therefore, it is now necessary to inspect an aluminum alloy which proves various compositions. Furthermore, the composition of the alloy for suppressing the interfacial reaction also needs to be full of all the characteristics of the liquid crystal display device, that is, the so-called ohmic junction current-voltage characteristics, joint resistance, wiring resistance, heat resistance, and the like. In order to obtain a practical structure of a liquid crystal display element, the reality is still difficult. Further, in the liquid crystal display device, the bonding structure which can be directly bonded is also required in the thin film circuits such as other organic light emitting diodes (0ELD) or passive matrix type organic light emitting diodes. . - The present invention provides a bonding structure of a thin film circuit in the case of the above-mentioned matter. In a thin film circuit having a transparent electrode layer and an alloy electrode layer, not only the cap layer but also an interface reaction can be omitted. It is also possible to bond ohmically and also has better bonding characteristics. Further, a practical and highly suitable bonding structure of a thin film circuit is provided, and when the thin film circuit is used for a liquid crystal display element, it can be directly bonded to a transparent electrode layer represented by indium tin oxide, or can be surely achieved. The interface reaction is suppressed, and all liquid crystal display element characteristics such as ohmic junction characteristics, low bonding resistance, wiring film resistance, and heat resistance are satisfied. [Means to solve the problem]

In order to solve the above problems, the inventors of the present invention conducted intensive studies on the phenomenon of interface reaction when a transparent electrode is directly bonded to various kinds of gold. 2169-6972-PF 8 1298351 =, at the joint interface of direct bonding, there is a predetermined In the case of the precipitate of the potential, it was found that the interface reaction of the direct bonding can be suppressed and also the phenomenon of ohmic bonding is considered. μ The bonding structure of the thin film circuit of the present invention has a transparent connection with the transparent electrode layer, and the thin film circuit is characterized by being dispersed in the aluminum alloy electrode layer. "Precipitate of the redox potential in the range of -0.6 volts. According to the research of the present inventors, in the electrode layer of Yuming alloy, there is two transparent layers. The potential of the polar (four) reduction potential value, that is, the precipitate of the emulsified reduction potential of the so-called enthalpy, whereby the precipitate can suppress the electrochemical reaction between the moon electrode layer and the electrode layer of the alloy, and does not cause bonding. The damage phenomenon on the interface and the increase in impedance, etc., ς =:Γ. Further, the "oxidation-reduction potential" is a potential at which the oxidation rate and the reduction rate are equal in equilibrium in the reactants and the original reaction, that is, the so-called equilibrium potential. When the oxidation-reduction potential of a non-human precipitate is less than a potential value of 12 volts, there is a tendency for destruction at the interface of the f-portion, and when the oxidation-reduction potential is a potential value of 〇·6 volts, there is The tendency to increase the resistance value of the aluminum alloy electrode layer itself. The precipitate having an oxidation-reduction potential in the range of -1. 2 volts to -0.6 volts can surely suppress the interfacial reaction, and the representative U is an intermetallic compound of the same name. The intermetallic compound containing the mark is, for example, an intermetallic compound of an element such as nickel (Ni), cobalt (Co), iron (Fe), yttrium (M), gamma (p), palladium (pd) and aluminum, specifically, Preferred are nickel aluminum (Al3Nl), Gu Huaming (Al9C〇2), iron oxide (AhFe), niobium aluminum nitride

2169-6972-PF 9 1298351 Extinct Ming (ALPd), Kehua (Al7NdNi2), Shilu Huaming (Al4C〇iNii) Aluminum (Α13γ!) 〇J!, the bonding structure of the thin film circuit of the present invention is preferably Alloy electric 2, 'Kunhe potential is 10 4 volts to _ 〇 6 volts. The potential of the entire mixed potential aluminum alloy electrode layer is also '..., ^ is also TM combined with the aluminum in the precipitate state; the potential of the electrode layer 'where the above-mentioned redox potential and the measurement method are both lower than -U When the potential value of the volt is used, when the development process is performed by using a so-called pattern forming method for forming a film circuit, an in-progress developing solution or the like is used, and discoloration of the transparent electrode layer due to an electrochemical reaction occurs, which is unsuitable. The situation. Further, when the mixed potential is a potential value of high volts, the amount of precipitation in the electrode layer of the alloy is increased, and a high potential portion and a low potential portion are generated in the aluminum alloy electrode layer, and the process is performed in a so-called pattern forming process (4). At the time of processing, there is also a tendency to dissolve the name itself, and it is difficult to form a circuit. In the bonded structure of the thin film circuit of the present invention, the transparent electrode layer is composed of a film of 3 indium oxide, and preferably the bonding resistance value of the transparent electrode and the aluminum alloy electrode layer is 1 ohm/□ 10 μm. When the bonding resistance value exceeds 200 ohms/□ 1 〇 micron to 200 ohms/匚] 10 U meters, the practicality of the liquid crystal display element disappears. The film containing the indium-based oxide is a so-called oxidized steel-based transparent electrode (Indium Tin Oxide film) or an indium Zinc Oxide film. Further, the joint impedance value is measured to constitute a joint impedance value of a so-called Kelvin element. The joint impedance value defined in the present invention is a value of the contact surface of the 丨〇 micron angle. 2微米之间的范围内的范围内的范围内的范围内的范围内的范围内的范围内的范围内的范围内的范围内的范围内的范围内。 The thickness of the aluminum alloy electrode layer is preferably 3. 5 micro ohm centimeters to 35 micro ohms centimeters after heat treatment at 300 degrees Celsius, 1 hour heat treatment. . Further, the aluminum alloy electrode layer has a cerium formation rate of preferably 3.3% or less on the surface of the alloy electrode layer after heat treatment at 3 ° C for 1 hour. When the specific impedance value exceeds 35 micro ohms, a practical thin film circuit cannot be formed. The specific resistance value is preferably 丨〇 micro ohm a is below ‘more preferably 5. 0 micro ohm centimeter or less. Further, lanthanum refers to a ruthenium-like defect formed on the surface of the electrode layer of the alloy after heat treatment, which is caused by volume shrinkage as opposed to the protrusion of the hillock. Further, the incidence of ruthenium was observed by scanning a scanning electron microscope (SEM: 10,000 times) to observe the surface of the aluminum alloy electrode layer after heat treatment, and the area of the ruthenium-like portion observed on the surface was measured, and 洼 was calculated. The area of the shaped portion is obtained as a ratio of the total field of view of the observation. If the incidence of ruthenium is more than 3 % ,, there is a tendency that a good bonding state can be achieved when the transparent electrode layer is not directly bonded. In the above-described bonding structure of the liquid crystal display device of the present invention, the aluminum alloy electrode layer preferably contains 0.5 at% to 25 at% of nickel', and may also contain 〇.i to 7.0 at% of cobalt and/or iron. The aluminum alloy electrode layer may further contain 0.1 at% to 3.0 at% of ruthenium. Such an element can suppress the interfacial reaction by the presence of the above-mentioned precipitate containing the intermetallic compound B contained in the electrode layer of the alloy, and can realize the direct bonding between the electrode layer and the transparent electrode layer. In the case of the recorded alloy electrode layer, when the cone is less than 0.5 at%, the amount of precipitates is reduced, and the inhibition of the interface is not fully achieved. Nickel

2169-6972-PF 1298351 2 When the temperature exceeds 25 at%, the wiring resistance value will be too large to obtain a practical connection structure. In addition, as for the secret or iron, when it is less than 1 at% in the content of uranium or iron, the amount of precipitates will decrease, and the inhibition of the interfacial reaction will not be fully achieved, and the content of uranium or iron exceeds 7. Gat%. When the wiring impedance value is too large, the two-t method becomes a practical structure. Also, in the case where there is more 鈥, when 钺3 is less than G. i (four), there will be a tendency to ride, and when the content exceeds =Oat%, it will be directly in the aluminum alloy electrode layer and the transparent electrode layer. At the time of joining, there is a tendency to lower the joint durability between the two. Further, in the joint structure of the liquid crystal display element of the present invention, the aluminum alloy electrode layer may contain carbon in an amount of from 1 at% to 3. at%. This carbon element has the effect of preventing the occurrence of hillocks or ridges and improving heat resistance. Further, in the study by the inventors, the carbon element (4) was contained, and it was presumed that it had an effect of suppressing the interfacial reaction of the precipitate in the electrode of the Tishansau alloy. When the carbon content is not at%, the occurrence of ruthenium tends to be easy, and when the carbon content exceeds 3.0 at%, the resistance of the alloy electrode layer tends to be increased. In the bonding structure of the thin dielectric circuit of the present invention, when the thin film circuit is a liquid crystal, and the transparent electrode layer of the device is an indium tin oxide electrode layer, the precipitate is preferably a redox potential of the transparent electrode layer. Inductive intermetallic compounds in the range of potential values + 〇_.2 volts. The liquid crystal display thus constituted can not only omit the cap layer used in the conventional liquid crystal display element, but also can generate an ohmic junction without causing an interface reaction. Further, in the case where the liquid crystal display element is used in the present invention, it is preferable to use AhH as a precipitation-based intermetallic compound. Next, this is a gold 2169-6972-PF 12 1298351. The film formation is performed when each electrode layer is formed, and the input electric power is 3·0 watt/square ** (Watt/cm 2 ), and the argon flow rate is 1 〇. In the case of 〇 cubic centimeters per minute (ccm) and argon pressure of 〇·5 Pa (pa), it is carried out using a magnetron/sputtering device. First, the joint structure of the liquid crystal display element of the present invention is taken as an example, and the first to third figures of the present invention relate to the joint structure of the steel tin oxide electrode layer and the aluminum alloy electrode layer of the first embodiment. And used to explain the observation results of this joint. Fig. 1 is a photograph showing a cross section of the joint between the aluminum alloy electrode layer and the tantalum layer of Example 1 by a transmission electron microscope. Fig. 2 and Fig. 3 are photographs showing a cross section of the joint between the aluminum alloy electrode layer and the indium tin oxide electrode layer of the example by a transmission electron microscope. Referring to Fig. 1, a p-type amorphous germanium layer is laminated on the surface of the n-type germanium substrate (the black portion of the lower half of the photograph) (in the photograph, a white portion of about 80 nm thick in the central portion), and then On the surface of the 0-type amorphous germanium layer, the aluminum alloy electrode layer of Example 1 (in the photograph, the upper half is about 2 nm thick) is obtained to obtain a sample, and then the temperature is 25 degrees Celsius. 'Hour-hour heat treatment, and the sample to be observed is processed with a focused ion beam (FIB), and then observed by a transmission electron microscope (magnification: 1 million times) to obtain a photograph shown in Fig. 1. . Further, by reversing the image of a plurality of electron beams of the cross section, the crystal structure is confirmed for the structure of the specific portion. By the cross-sectional observation of the second drawing, it can be clearly determined that after the heat treatment of bonding the aluminum alloy electrode layer of the embodiment 于 to the shihua layer, nickel plating is precipitated on the surface between the aluminum alloy electrode layer and the ruthenium layer. Aluminum (part of the number 4 in the photograph) intermetallic compound. Please refer to Figure 2, in the indium tin oxide (In2〇d - 1 〇 weight 2169-6972-PF 14 1298351% (wt%) tin oxide (SnO2)) electrode layer (photograph, the lower side of the center Approximately 150 nm thick black portion) The aluminum alloy electrode layer of Example ( was formed on the surface (in the photograph, the upper side of the center was about 2 〇〇 nanometer thick and slightly white portion) to obtain a sample, and then the temperature was 3 ° C. The heat treatment of the twist and the hour was performed, and the cross section of the sample to be observed was processed by a focused ion beam, and then observed by a transmission electron microscope (magnification: 100,000 times) to obtain a photograph shown in Fig. 2 . Fig. 3 is an enlargement (magnification of 1 million times) of the interface of the joint portion of Fig. 2, and the sheet is shown by the enlarged photograph of the figure of the brother 3, the side of the indium tin oxide electrode layer (in the photo, the black portion on the lower side) In the case of the aluminum alloy electrode layer side (in the photograph, the lower side white trowel), agglomerated precipitates are observed in the cancer. The precipitate can be clearly identified as the nickel-aluminum intermetallic compound confirmed in Fig. 1. The observation results of FIGS. 1 to 3 can clearly determine the present embodiment. 1 The alloy electrode layer is directly bonded to the indium tin oxide electrode layer, and after the subsequent heat treatment, a nickel-plated intermetallic compound having a particle size of about 1 〇 nanometer to 15 〇 nanometer is deposited at the interface (Fig. 1 Further, as shown in the enlarged view of Fig. 3, it is understood that the vicinity of the nickel-aluminum intermetallic compound is deposited at the joint interface between the aluminum alloy electrode layer and the indium tin oxide electrode layer of the first embodiment, and diffusion bonding is performed. The portion of the complaint is a layered diffusion portion of about 3 nm to 20 nm thick. Next, regarding the aluminum alloy electrode layers of the first embodiment and the comparative example 1, the pair of indium tin oxide electrodes were investigated. The result of the current-voltage characteristic at the time of layer bonding is described. This bonding endurance test is performed by preparing the test sample shown in Fig. 4. The test sample is called a so-called Kelvin element structure, and the fourth figure is On the indium tin oxide (indium oxide-niobium weight percent tin oxide) electrode layer (〇·2 μm thick), a vertically intersecting aluminum alloy electrode 2169-6972-PF 15 1298351 layer (0.2 μm thick) is formed, and then Terminal part from the arrow part (1 (4 〇) is obtained by energization. This current-voltage characteristic is obtained by measuring the current flowing between the terminals when a voltage is applied between the terminals. Moreover, the area of the joint portion is 1 〇〇 square micrometer (10 μm X). 10 μm) Fig. 5 and Fig. 6 show the results of measuring current-voltage characteristics on the aluminum alloy electrode layer and the indium tin oxide electrode layer of the examples and comparative examples. Fig. 5 is a first embodiment. The measurement results, Fig. 6 is the measurement result of the comparative example. Also, in the case of the measurement results, the actual (4) is the case of no heat treatment (after splashing), and the dotted line means 25 degrees Celsius, i hour. In the case of heat treatment, it can be seen from Fig. 5 that in the case of the aluminum alloy electrode layer of Example ,, it was confirmed that the current-voltage characteristics have a linear relationship regardless of the presence or absence of heat treatment. From this, it is understood that the aluminum alloy electrode layer of the first embodiment and the indium tin oxide electrode layer can be ohmically bonded. On the other hand, as can be seen from Fig. 6, the aluminum alloy electrode layer of the comparative example produced a current-voltage relationship of a nonlinear shape during heat treatment. The joint between the aluminum alloy electrode layer of Comparative Example 1 and indium tin oxide is a rectifying structure, and the metal-insulator described by the so-called pool•Frankel (Frankel) mechanism. The metal structure (Μ "structure: the same. That is, in the case of the aluminum alloy electrode layer of Comparative Example i, it is presumed that by heat treatment, it will be at the joint interface between the aluminum alloy electrode layer of the comparative example k and the indium tin oxide. An oxide film of aluminum oxide is formed. Further, the current-voltage characteristic shown here is obtained by measuring current and voltage between the two terminals shown in Fig. 4 (reference numerals 10 and 4G in Fig. 4). The result of the wire-impedance state on the wiring portion (the alloy electrode layer and the indium tin oxide 2169-6972-PF 16 1298351 compound) other than the joint portion where the perpendicular intersection is formed.

Then, the junction for performing the bonding endurance test with the indium tin oxide electrode is performed. This bonding endurance test is carried out by testing the test specimen prepared as the fourth figure described above. The same applies to the formation of a vertically intersecting aluminum alloy electrode layer (〇·2 μm thick) on a 7-tin (yttria-10 wt% tin oxide) electrode layer (〇 2 (9) m thick), = then The terminal portion of the split is energized. The energization endurance characteristic is the measurement/inter-substrate impedance, and the energization time at which the impedance change between the terminals is completed = the electrode layer is in the embodiment!, the comparative example, and the conventional example. The conventional example is a structure obtained by forming a chromium film (〇·〇 5 μm thick) between the pure aluminum electrode layer and the transparent electrode, and forming a material of the f layer. The atmosphere is carried out in an atmospheric atmosphere, and the current value is 1 micro micro-peech = 33⁄4 ampere. The junction resistance value is equal to the initial value. Moreover, the temperature is 85 degrees Celsius and 1 Celsius at the time of energization. 0 degrees, 150 degrees Celsius, 2 degrees Celsius and photo Carried out at 250 degrees.

In the picture of the brother 7th, the time at which the impedance of the joint is increased at each temperature (the time point which is 1〇〇 times the initial value) is measured, and the reciprocal of the temperature at the time of energization is obtained. Hannis graphics. In Fig. 7, the vertical axis is the life time and the horizontal axis is 1 〇〇〇/absolute temperature. From the inclination of the secondary line inserted from the Yahannis material, the activation energy at which the impedance of the joint portion is increased is calculated, and it can be clearly determined that the activation energy of the embodiment i is 5 volts, volt, Comparative example! The activation energy is 〇·electron volts. Thus, the activation energy of the alloy electrode layer of Example 1 is about 3.3 times that of Example 1. Further, in the case of the first embodiment, it is presumed that the temperature is 85 169-6972-PF 17 1298351 degrees: and may have a durability of about 70,000 hours, which is similar to the case where the conventional example has a chromium film between the electrode layers. . Next, the results obtained by investigating the hillock characteristics of the alloy electrode layer will be described. After the wiring of the aluminum alloy film is formed on the wafer substrate by sputtering, the IV of the insulating film is formed by chemical vapor deposition, and the Celsius film is heated on the gated alloy film. The agglomeration of the surface of the alloy film is the hillock. from

Therefore, the hillock may be caused by an increase in stress on the alloy film due to heat treatment. To this end, the pure electrode layer and the electrode layer of the example k-shaped alloy were formed on the germanium wafer substrate, and the change in the stress generated on the electrode layer was investigated while heating. Specifically, on a tantalum wafer substrate having a radius of 100 mm, an electrode layer of 2 μm thick was laminated by sputtering to prepare a sample.

Moreover, a laser-type stress measuring device FLX-2320 (manufactured by KLA TENCOR Co., Ltd.: nitrogen gas flow rate (5 liter / minute (1/min)), solid laser light of 670 nm), with a laser The stress generated by the electrode layer is measured. The results of this test are shown in Figure 8. Figure 8 is the result of measuring the stress state of the electrode layer at various temperatures from room temperature to 5 degrees Celsius, and then from λ to 5 degrees Celsius to 1 degree Celsius (temperature rise rate, The cooling rate is 5 degrees Celsius / minute). The negative stress value indicates a state in which a compressive stress is applied, and the positive stress value indicates a state in which a tensile stress is applied. The thick line indicates Example 1, and the thin line indicates pure aluminum. From the stress state of pure aluminum, it is apparent that the stress value of -100 MPa continuously from the temperature of 18 ° C to the temperature of 40 ° C, which means that the pure aluminum electrode layer is compressed. When stress occurs, it will happen to produce hillocks to slow down 18

2169-6972-PF 1298351 and the phenomenon of this compressive stress. On the other hand, in the case of the embodiment, Celsius 2 at the time of temperature rise. . A large negative stress was found to be moderated in the vicinity of the degree. This is the reason why the intermetallic compound was precipitated in the electrode layer of the alloy of Example 1. That is, in the case of the embodiment, the phase can be relaxed by the precipitation: the intermetallic compound, and the stress applied to the electrode layer of the alloy is relaxed without occurrence of hillocks. Further, the results of measuring the oxidation-reduction potential of chromium, tumbling, indium tin oxide film, nickel aluminide or the like which are constituent materials of the cap layer in the comparative example of the measurement examples will be described. The oxidation-reduction potential is measured by forming a film having a predetermined thickness (〇/2 μm) according to each composition on a glass substrate by a sputtering apparatus, and then cutting the glass substrate as a potential amount 'and a masking potential measurement test. The surface of the sample is exposed to the equivalent of the heart: two, and the electrode for measurement is formed. The redox potential was measured using a 35% aqueous solution of sodium chloride (liquid temperature was 27 degrees Celsius), and the reference 7 electrode was silver/silver chloride. Further, the indium tin oxide film is a film composed of indium oxide - 10% by weight of tin oxide. The results are shown in Table (4).

0. 73 0. 78 Nickel inscription (AhNi) i(Cr) m (M〇) Indium tin oxide film (ιτο膜) -〇· 51 一〇· 82 2169-6972-PF1-20051028 19 1298351 In Table 2 The oxidation-reduction potential of Example 1 ^ ^ ^ W疋 is very close to the indium tin halide film. Further, the intermetallic compound nickel aluminide 〜half-L reduction potential value ′ also clearly has the same oxidation-reduction potential value as the chromium film. Next, the evaluation of the bonding resistance with the antimony tin oxide electrode layer will be described. Figure 9 is a graph showing the difference between the measured impedance values of the respective electrode layers and the steel-oxide electrode layer, and the difference between the measured oxidation-reduction potential of each electrode layer: the indium tin oxide oxidation-reduction potential value. , the painted figure. The measurement method is to prepare a test sample as shown in Fig. 7, and then to measure without heat treatment (after sputtering) and heat treatment (at various temperatures of 2 degrees Celsius, 25 degrees Celsius, 3 degrees Celsius, The impedance value of the sample after 1 hour of annealing. The measurement of the bonding resistance value was carried out by using the test sample as shown in Fig. 4, and the interplating was formed on the electrode layer 4 〇 (〇 2 μm thick) of indium tin oxide (indium oxide, weight percent tin oxide). The electrode layer 10 (0.2 μm thick) was further energized from the terminal portion of the arrow portion to measure the impedance to calculate the junction resistance of the film overlap portion (10 μm X 1 μm). The electrode layer was tested in three types of electrode layers, such as Example 1 and Comparative Example, and a structure in which a pure aluminum film and a chromium film were laminated. The electrode layer of this laminated structure was formed on a 〇·〇3 μm chromium film to form a 2 μm pure aluminum film. Further, using the oxidation reduction potential value shown in Table 2, the potential difference between the indium tin oxide and each electrode layer was calculated, and this potential difference was plotted on the horizontal axis, together with the measured joint resistance values (Fig. 9). As is apparent from Fig. 9, when an electrode having a chromium film having a potential equal to the same standard as the oxidation-reduction potential of indium tin oxide is present between the electrode and the indium tin oxide, the bonding resistance is extremely low. In the case of the electrode layers of the aluminum alloy 2169-6972-PF 20 1298351 of Example 1 and Comparative Example 1, the bonding resistance of Example 1 which is not significantly different from the potential difference of indium tin oxide was lower, and the alloy of Comparative Example 1 was confirmed. After the electrode layer is subjected to heat treatment, the joint resistance is remarkably large. Further, although the measurement of the bonding resistance is performed by taking an aluminum alloy electrode layer on the indium tin oxide electrode layer as an example, it has been confirmed that the inverted structure in which the indium tin oxide electrode layer is formed on the aluminum alloy electrode layer can be obtained. Same joint impedance characteristics.

From the above results, it is understood that the aluminum alloy electrode layer of the first embodiment has not only the oxidation-reduction potential of itself but also the value of the oxidation-reduction potential of indium tin oxide, and the bonding resistance when directly bonded to the indium tin oxide electrode layer. It is also low, and by performing heat treatment, a nickel-aluminum intermetallic compound is deposited on the joint interface of the two, and preferable joining characteristics can be achieved. This reason is presumed to be because the oxidation-reduction potential of the aluminum aluminide is extremely close to the redox potential of the indium tin oxide, so that the electrochemical reaction with the indium tin oxide does not occur, and the joint portion is not broken.

Since the aluminum alloy electrode layer is formed by directly bonding to the transparent electrode of the indium tin oxide film, the interface between the indium tin oxide electrode layer and the aluminum alloy electrode layer can be deposited with the indium tin oxide electrode. The bonding structure of the metal-oxide T material (nickel-aluminum) having an oxidation-reduction potential value of about ±200 mV is excellent in bonding characteristics. Visiting the intermetallic compound (the interfacial diffusion layer formed by the aluminum-based intermetallic compound precipitated at the interface when the average particle size is from nanometer to 150 nm, the thickness is estimated to be 3 nm to 2 〇N. D uses nickel, cobalt, iron, money, and investigates liquid crystal display elements. Second embodiment: This second embodiment uses carbon to form aluminum alloy electrode layers of various compositions, 2169-6972-PF 21 1298351 The results of the characteristics of the members are explained. In Table 3, the composition of the aluminum alloy electrode layer of the second embodiment is discussed. The alloy films shown in Table 3 are the same as those of the first embodiment. Table 3 Composition Precipitate Precipitate Potential Mixing Potential at% VV Example 2 Al~0.3C-3.0Ni AlsNi - 0·73 -1. 02 Example 3 Al-0.5C-3.0Ni AMi -0 · 73 -1.05 Example 4 Al-0.3C-5.0Ni AhNi -0.73 -1.01 Example 5 Al-l.0Nd-2.0Ni AhNdNiz - 0.92 -1· 05 Example 6 A Bu 0.2C-2.0Ni - 3.0C 〇AhCoiNii -0·70 -0.93 Example 7 Al-3.0Ni AMi -0.73 -1.04 Example 8 Al-10Ni AMi -0.73 -0.86 Example 9 Al-25Ni AMi -0.73 -0.73 Example 10 Al-2.OFe AlsFe -1.08 -1.37 Example 11 A1-2.0C〇AI9C02 -1.09 -1· 25 Example 12 A1 - Pd AhPd -0.94 -1· 10 Example 13 A1-4Y AhYi -0.70 -0· 86 Comparative Example 2 A1-2.0M AlnNda -1.53 -1.58 Comparative Example 3 Pure A1 - - 1.68 Comparative Example 4 Pure Cr - One - 0.78 Table 3 shows Example 2 to Example 1 3. Comparative Example 2 to 3 The measurement results of the alloy film of each composition, the precipitate in the alloy film, the oxidation-reduction potential of the precipitate, and the mixed potential of the alloy film.

The method is the same as that described in Table 2. Next, the results of investigating the specific resistance, heat resistance and enthalpy characteristics of the alloy films of the compositions of Examples 2 to 9 and Comparative Examples 2 to 3 in Table 3 are shown in Table 4. Table 4 2169-6972-PF1-20051028 22 1298351 Specific Impedance Value # Ω · cm Hillock Heat Resistance °C 涟漪 Incidence Rate % Example 2 3. 76 400 0 Example 3 4. 12 400 0 ~~ Example 4 4. 02 400 0 Example 5 3. 43 400 0 Example 6 5. 46 530 0 Example 7 3. 74 400 0.8 0 Example 8 Example 9 10. 0 500 1.14 " 31. 6 500 2. 40 Comparative Example 2 4. 13 400 0 Comparative Example 3 3. 00 200 Hillock occurrence Comparative Example 4 13· 2 - 0 The specific impedance value is a single film (thickness about 〇·3 μm) in which each alloy film is formed on a glass substrate. After heat treatment at 300 °C, the results of the film after heat treatment were measured by a 4-terminal: impedance measuring device. Further, the heat resistance of the dome and the hill is a single film (thickness of about 3 μm) in which each alloy film is formed on a glass substrate, and each of 100 degrees Celsius, 2 degrees Celsius, 3 degrees Celsius, and Celsius. After heat treatment at a temperature for 1 hour, the surface of the film was observed by a (IV) electron microscope (SEM), and it was confirmed that there was a sub-micro (the temperature at which the protrusions of sub__ or more were present). The results are shown in Table 4. The incidence of relief is based on the same sample as the specific impedance measurement, and the surface of the membrane is observed on a specific surface by a cat-type electron microscope (〖10,000 times) at 300 degrees Celsius, 小, 、, 々, 々 Obtained the beak A (inner diameter is ···3 micrometer to .5 micro-not)' and measure the total area of the braided part existing in the observation field, and then calculate the total area of the braided part to occupy _,# product The ratio of the field of view of the king's body is obtained. Moreover, in Table 4, the average value of the sample calculated from the five parts of the 乂s phase of each film is 2169-6972-PF1-20051028 23 ' 1298351 As can be seen from Table 4, the alloy films of Examples 2 to 6 are in less than Celsius. There was no occurrence of hillocks at 400 degrees, and no flaws occurred. However, Examples 7 to 9 confirmed the tendency to cause enthalpy. This is because the compositions of Examples 2 to 4 and Example 6 contained Carbon, the composition of Example 6 further contains ruthenium, so it can be clearly determined that the occurrence of hillocks or mites can be prevented by carbon or titanium. - Furthermore, comparison is made to Example 2 to Example 9 in Table 3 Example 2 to φ Compared with the alloy film of each of the compositions of Example 3, the voltage-current characteristics and the bonding characteristics (contact resistance and bonding durability) when the respective films were directly bonded to the indium tin oxide electrode layer were examined. The results are shown in Table 5. Further, in the second embodiment, in the sample in which the bonding characteristics were investigated, in order to have a good bonding state, after the transparent electrode layer was directly bonded to each alloy film layer, a predetermined heat treatment (in an inert gas) was performed. (Nitrogen, argon) atmosphere gas, 300 degrees Celsius, 60 minutes).

Table 5 Bonding characteristics 1 Bonding 脱 Degradation 2 Current-voltage characteristic Bonding resistance value Bonding durability Bonding resistance value Bonding durability Ω(Π10/ζπι) Hour Ω(Π10//πι) Hour Example 2 Ohm 50~150 > 250 50 to 150 70000 Example 3 Ohm 50 to 150 > 250 50 to 150 > 250 Example 4 Ohm 50 to 100 > 250 50 to 150 > 250 Example 5 Ohm 50 to 150 > 250 50 to 150 200 Example 6 Ohm 50 to 150 > 250 50 to 150 > 250 Example 7 Ohm 50 to 150 > 250 50 to 150 > 250 Example 8 Ohm 50 to 150 > 250 50 to 150 > 250 Implementation Example 9 Ohm 30 to 50 > 250 30 to 50 > 250 Comparative Example 2 Two-piece 50 to 150 2 Bu 30 (21200) 1.5 Comparative Example 3 Dipole 100 to 200 10 (7020) 0.3 Comparative Example 4 Ohm 5 〜10 >250 5~10 >70000 2169-6972-PF1-20051028 24 1298351 The current-voltage characteristics shown in Table 5 are the same as those described in the fifth and sixth figures of the first embodiment. The method performs measurement, and each current-voltage characteristic map is created, and the graph shows whether or not the result of the rectification effect is generated. Further, in the investigation of the bonding characteristics, in the case of forming each alloy film, the case where the antimony-tin oxide film is formed on the film is the bonding property 丨, and the case where the alloy film is formed on the indium-tin oxide electrode layer is the bonding property 2 . Further, the bonding resistance value of the bonding characteristics is such that the Kelvin element having the same current-voltage characteristic measurement as that of the first embodiment is formed, and after a heat treatment of 250 degrees Celsius and i hour, a current of 3 mA is flown, and the voltage is drastically changed. Bonding impedance value. Further, the Kelvin element for measuring the bonding property 1 is formed by first forming an alloy film on a substrate by sputtering, and etching the alloy film to form a straight line. Then, an amorphous indium tin oxide film is formed on the surface of the alloy film, and an oxalic acid-based solution of a weak acid which does not dissolve the linear circuit of the underlying alloy film is used, and the indium tin oxide film is formed only in the form of a residual indium tin oxide film. The in-line alloy film linear circuit vertically intersects the indium tin oxide film linear circuit to produce a sample. _ Bonding durability is to produce the Alhansne pattern as shown in the γth diagram of the first embodiment, and the activation energy is estimated from the slope of the Yahannis diagram at a permissible current of 3 mA and 1 〇 microamperes. The result of the bonding endurance time of 85 degrees Celsius is displayed (this joint durability measurement is performed by referring to JIS_C-5〇〇3 electronic component failure rate test method and JIS-C-0021 heating test method). As is apparent from the results of Table 5, in the case of Example 2, the joint resistance value of Example 2 was slightly higher than that of the chromium film, but had the same degree of bonding characteristics as the chromium used as the cap layer. Further, in the case of Embodiment 3, Embodiment 4, and Embodiment 6 2169-6972-PF 25; 12938351 to Embodiment 9, it is sufficient for both the joint resistance value and the joint endurance value. Characteristics. In the case of Example 5, the joint: 14 σ is durable and has good results. The judgment should be influenced by the process of forming the direct joint structure. Second Example. This third embodiment illustrates the results of the relationship between the bonding resistance characteristics of the alloy electrode layer and the heat treatment of Investigation Example 4 (aluminum-0·3 at% carbon-5. 0 at%). . The measurement of the bonding resistance was carried out in the same manner as the bonding property 1 described in Table 5 of the second embodiment described above (bonding the alloy electrode layer on the indium tin oxide film). However, the test sample for measuring the joint resistance value of the third embodiment is directly bonded to the electrode layer of the sinter alloy after the transparent electrode layer (indium tin oxide film) is placed in an inert gas (nitrogen) atmosphere. Heat treatment at 3 temperatures of 250 ° C, 3 〇 0 ° C, and 350 ° C (60

minute). The results are shown in Table 6. Table D Heat Treatment Temperature Bonding Impedance Value Ω 250t: 220 300°C " ϊ 5 ~ 350 〇 C 100 Also, sputtered on a glass substrate (round-in power is 3.0 watts / cm ^ 2, argon The flow rate is 100 cubic centimeters per minute, and the argon pressure is 〇5 Pa.) A 2 μm thick aluminum alloy electrode layer is formed to prepare a test sample, and the test sample is heat treated in a nitrogen atmosphere (Celsius 2). The temperature was measured to 400 ° C for 1 hour, and the surface of the test specimen after heat treatment was observed with a scanning electron microscope (sem : ι〇〇〇〇). The results are shown in Fig. 1 2169-6972 -PF1-20051028 26 1298351 It can be seen from Table 6 that when the heat treatment temperature after joining becomes high, it is confirmed that the joint resistance value becomes small. Also, as shown in Fig. 1, in degrees Celsius to Celsius (D, E, F) In the heat treatment, the intermetallic compound formed in the electrode layer of the alloy is affixed (the illusion of the illusion (in the white part of each observation photograph) exists, and it is confirmed that the temperature is high. Things will get bigger. Also, Figure 10 B (Celsius 2〇〇) ), c (25 degrees Celsius) precipitates are not clearly manifested, and the old results shown in the first embodiment should be caused by the initiation of precipitation of intermetallic compounds (nickel aluminum) in the aluminum alloy electrode layer. It can be seen from Tables 6 and 10 that in order to achieve a bonding state in which the bonding resistance value is 2 〇〇 ohm / □ ί 微米 or less, it is preferable to perform heat treatment at 28 degrees Celsius or higher. This is performed by a certain degree of heat treatment. In order to disperse an appropriate aluminum intermetallic compound in the aluminum alloy electrode layer, the aluminum intermetallic compound thus precipitated can be a certain degree of aggregation into a suitable particle size to achieve a good bonding state. The upper limit temperature is a practical upper limit temperature of 400 degrees Celsius to 500 degrees Celsius after the heat resistance of the aluminum alloy electrode layer and the manufacturing conditions of various components. Fourth Embodiment Finally, this fourth embodiment The investigation of the case where the aluminum alloy electrode layer composed of the above-described Example 2, Example 4, Example 5, and Comparative Example 2 is bonded to the indium tin oxide electrode layer as a transparent electrode is used. The fourth embodiment investigates the bonding characteristics of the second embodiment described above, that is, after forming each alloy film, using indium zinc oxide (I ZO ), dry (oxidized marriage ( In2〇3)-10.7% by weight of zinc oxide (zn〇)) forms an indium zinc oxide film on each alloy film. At this time, the test sample is manufactured,

2169-6972-PF 27 1298351 The measurement method of the bonding characteristic 1 is the same as that of the second embodiment described above. However, the test specimen for investigating the joint characteristics of the fourth embodiment was tested in the case where the joint area at the time of forming the Kelvin element was 2,500 square micrometers (5 Å to 5 μm). The measurement results of the joint resistance values are shown in Table 7, and the endurance test results are shown in Fig. 11. The joint resistance value shown in Table 7 and Fig. u is the result of measurement after heat treatment (60 minutes) in an inert gas (nitrogen gas or atmosphere) after the preparation of the test sample.

Table 7 Current-voltage measurement Bonding characteristics 1 Bonding resistance value Ω (Π50/Ζ m) Example 2 Ohm 34. 0 Example 4 Ohm 30. 2 Example 5 Ohm 30. 6 Comparative Example 2 Ohm 32. 8

As is apparent from the results shown in Table 7, all of Example 2, Example 4, Example 5, and Comparative Example 2 were excellent in joint resistance values when they were joined to the indium oxide electrode layer. However, it can be seen from the results of the life endurance test of the second diagram that "Example 2, Example 4, and Example 5 have not seen a large change in the joint resistance value after the endurance time exceeds 2 hrs. On the other hand, in Comparative Example 2, after about 20 hours passed, an increase in the intense joint resistance value was observed, and it was confirmed that the joint portion was broken. [Industrial Applicability] Γ From the above, it is known that the thin film circuit having the transparent electrode layer and the aluminum alloy electrode 2169-6972-PF1-20051028 28 1298351 layer of the present invention can not only omit the cap layer but also does not generate "Thin film which can also be ohmically bonded and has excellent joint resistance. When the liquid crystal display element uses this thin film circuit, not only the transparent electrode layer typified by the indium tin oxide electrode layer can be directly bonded' It is also possible to suppress the interface reaction, and it is also possible to satisfy the characteristics of all liquid crystal display elements such as ohmic junction characteristics, low junction resistance, wiring film resistance, and heat resistance, and is a practically suitable thin film circuit. BRIEF DESCRIPTION OF THE DRAWINGS > The Fig. 1 is a photograph of a cross section of the joint between the electrode electrode layer and the tantalum layer of the embodiment by a transmission electron microscope. Fig. 2 is a magnified photograph of a cross section of the joint portion of Fig. 2, which is a cross section of the joint portion between the aluminum alloy electrode layer and the indium tin oxide electrode layer of the embodiment, observed by a transmission electron microscope. Fig. 4 is a schematic perspective view showing a test sample in which an indium tin oxide electrode layer and an aluminum alloy electrode layer are laminated. Figure 5 is a graph showing the current-voltage characteristics of the measurement examples. Fig. 6 is a graph for measuring the current-voltage characteristics of the comparative example. Figure 7 is an Al Hanisian figure for measuring the durability characteristics of the joint. Figure 8 is a graph showing the relationship between the stress applied to the electrode layer and the heat treatment temperature. Figure 9 is a graph showing the relationship between the bonding resistance and the potential difference of indium tin oxide. The figure is a scanning electron microscope observation of the surface of the aluminum alloy electrode layer after heat treatment>; Figure 11 is the endurance test result of the indium zinc oxide electrode layer.

2169-6972-PF 29 1298351 Bonding resistance value graph. [Description of main component symbols] 1 〇~terminal section 40~terminal section

2169-6972-PF 30

Claims (1)

1298351 X. Patent application Fan Park·· h A bonding structure of a thin film circuit, comprising: a transparent electrode layer; and: a gold electrode layer 'directly bonded to the transparent electrode layer. The feature is: providing an orifice, the alloy electrode The precipitate of the redox potential in the layer, '2 volts to -1. 1 2 3 volt range:::=: 1 item (4) The junction structure of the membrane circuit is the aluminum-containing metal Compound. Ice, 3. The joint structure of the thin film circuit described in claim 1 wherein the mixed potential of the electrode layer is -0·6 volt. The volts of the mixture of the aluminum alloy electrode layer is -1. 4 volts to -0.6 volts. 2169-6972-PF 31 1 The bonding structure of the thin film circuit according to the first aspect of the invention, wherein the transparent electrode layer is composed of a film containing an indium-based oxide, and the transparent electrode and the aluminum alloy electrode are described. The bonding resistance value of the layer is 1 ohm/port 10 micron to 200 ohm/port 1 〇 micron. 2. The bonding structure of the thin film circuit according to the second aspect of the invention, wherein the transparent electrode layer is composed of a film containing an indium-based oxide, and a bonding resistance value between the transparent electrode and the aluminum alloy electrode layer is 1 ohm / port 10 microns to 2 ohms / 〇 1 〇 micron. 3. The bonding structure of the ruthenium film circuit according to the third aspect of the invention, wherein the transparent electrode layer is composed of a film containing an indium-based oxide, and the bonding between the transparent electrode and the aluminum alloy electrode layer is described. The impedance value is ι ohm / port 10 micron to 2 ohm ohm / port 1 〇 micron. 8. The bonding structure of the thin film circuit according to the fourth aspect of the invention, wherein the transparent electrode layer is composed of a film containing an indium oxide, and the bonding resistance value between the transparent electrode and the aluminum alloy electrode layer is For ^ ohm / port 10 microns to 2 ohms / □ 〇 〇 micron. The bonded structure of the thin film circuit according to the first aspect of the invention, wherein the specific resistance value of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and j hours is 3.5 micro ohm centimeters to 35 Micro ohm centimeters. The bonding structure of the thin film circuit according to the second aspect of the invention, wherein the specific resistance value of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and 丨 hour is 3·5 micro ohm centimeters to 35 micrometers. Ohm centimeters. The bonding structure of the thin film circuit according to the third aspect of the invention, wherein the specific resistance value of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and 丨 hour is 3·5 micro ohm centimeters to 35 micrometers. Ohm centimeters. 12. The joint structure of the thin film circuit as described in claim 4, wherein the specific impedance of the electrode layer of the alloy electrode at 3 degrees Celsius and 1 hour heat treatment is 3.5 micro ohm centimeters to 35 micrometers. Ohm centimeters. 13. The bonding structure of the thin film circuit according to claim 5, wherein the specific impedance value of the electrode layer of the alloy electrode after 3 hours of heating at 1 degree Celsius and 1 hour heat treatment is 3 · 5 micro ohm centimeters to 3 5 Micro ohm centimeters. 14. The joint structure of the thin film circuit as described in claim 6 wherein the specific impedance of the electrode layer of the first alloy is 3 degrees Celsius, and after 1 hour heat treatment, the specific impedance value of 2169-6972-PF 32 1298351 is 3· 5 micro ohm centimeters to 35 micro ohm centimeters. The bonding structure of the thin film circuit according to claim 7, wherein the specific resistance value of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and i hour is 3-5 micro ohm centimeters to 35 micrometers. Ohm centimeters. The bonding structure of the thin film circuit according to the eighth aspect of the invention, wherein the specific resistance value of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and 丨 hours is 3.6 micro ohm centimeters to 35 micro ohm centimeters. The joint structure of the thin film circuit according to the first aspect of the invention, wherein the aluminum alloy electrode layer is formed on the surface of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and 1 hour, and the incidence of bismuth is formed. It is 3 % 〇 or less. 18. The joint structure of a thin film circuit according to claim 2, wherein the aluminum alloy electrode layer is formed on the surface of the alloy electrode layer after heat treatment at 3 degrees Celsius and 1 hour heat treatment. For the percentage of 3. 〇 below. The bonding structure of the thin film circuit as described in claim 3, wherein the aluminum alloy electrode layer is formed on the surface of the alloy electrode layer after heat treatment at 3 degrees Celsius and 1 hour heat treatment. The system is 3.3% below. (20) The bonding structure of the thin film circuit according to the fourth aspect of the invention, wherein the aluminum alloy electrode layer is formed on the surface of the alloy electrode layer after heat treatment at 300 ° C for 1 hour, and the incidence of bismuth is percentage 3. The following. [21] The bonding structure of the thin film circuit of claim 5, wherein the aluminum alloy electrode layer is on the surface of the alloy electrode layer after heat treatment at 300 ° C for 1 hour. The incidence of the formation of bismuth is less than or equal to 2%. The bonding structure of the thin film circuit as described in claim 6, wherein the aluminum alloy electrode layer is heat treated at 300 degrees Celsius for 1 hour. On the surface of the aluminum-plated gold electrode layer, the incidence of bismuth formation is less than q 〇. The bonding structure of the thin film circuit according to the seventh aspect of the invention, wherein the aluminum alloy electrode layer is formed on the surface of the aluminum alloy electrode layer after heat treatment at 300 ° C for 1 hour. Less than 3.0. [24] The bonding structure of the thin film circuit according to the eighth aspect of the invention, wherein the aluminum alloy electrode layer is formed on the surface of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and i hour, and a rate of occurrence of bismuth is formed. For the percentage of 3. 〇 below. The bonding structure of the thin film circuit according to the ninth aspect of the invention, wherein the aluminum alloy electrode layer is formed on the surface of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and i hour, For the percentage of 3. 〇 below. The bonding structure of the thin film circuit according to the first aspect of the invention, wherein the aluminum alloy electrode layer is formed on the surface of the aluminum alloy electrode layer after heat treatment at 3 degrees Celsius and i hour. The incidence rate is 3.3% below. [27] The bonded circuit of the invention of claim 5, wherein the aluminum alloy electrode layer is formed on the surface of the alloy electrode layer after heat treatment at 300 ° C for 1 hour. The incidence of sputum is 3.0% or less. 28. The bonding structure of the thin film circuit according to claim 12, wherein the aluminum alloy electrode layer is formed on the surface of the alloy electrode layer after heat treatment at 300 ° C for 1 hour, and the incidence of defects is 100. 3 or less. 29. The bonding structure of the thin film circuit according to claim 13, wherein the aluminum alloy electrode layer is formed on the surface of the alloy electrode layer after heat treatment at 3 degrees Celsius and 1 hour heat treatment. It is below 3.0%. 3 〇 接合 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如The rate is 3.0% or less. 31. The joint structure of the thin film circuit as described in the fifth paragraph of the patent application, wherein the occurrence of bismuth is formed on the surface of the alloy electrode layer after the heat treatment of the first alloy electrode layer at 3 degrees Celsius and 1 hour heat treatment. The system is 3.0% or less. 32. The joint structure of the thin film circuit according to claim 16, wherein the occurrence of bismuth on the surface of the electrode layer of the alloy electrode layer after the heat treatment at 300 ° C for 1 hour is 100. 3 or less. 33. The bonded film construction of 2169-6972-PF 35 1298351 according to claim 1, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. 34. The bonding structure of a thin film circuit according to claim 2, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. The bonding structure of the thin film circuit as described in claim 3, wherein the aforementioned aluminum alloy electrode layer contains 0.5 at% to 25 at% of nickel. The bonding structure of the thin film circuit according to claim 4, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. 37. The bonding structure of the thin film circuit according to claim 5, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. 38. The bonded structure of the thin film circuit of claim 6, wherein the aluminum alloy electrode layer contains at. 5 at% to 25 at% of nickel. 39. The bonding structure of a thin film circuit according to claim 7, wherein the aluminum alloy electrode layer contains 0.5 at% to 25 at% of nickel. The bonding structure of the thin film circuit as described in claim 8 wherein the aluminum alloy electrode layer contains at. 5 at% to 25 at% of nickel. The bonding structure of the thin film circuit according to claim 9 wherein the aluminum alloy electrode layer contains 0.5 at% to 25 at% of nickel. 42. The bonding structure of the thin film circuit according to the first aspect of the invention, wherein the aluminum alloy electrode layer contains at. 5 at% to 25 at% of nickel. 43. The bonded structure of a thin film circuit according to claim n, wherein the aluminum alloy electrode layer contains at.5 at% to 25 at% of nickel. 44. The bonded structure of a thin film circuit according to claim 12, wherein the aforementioned aluminum alloy electrode layer contains 0.5 at% to 25 at% of nickel. 45. The bonding structure 2169-6972-PF 36 129^351 of the thin film circuit according to claim 13, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. 46. The bonded structure of the thin film circuit of claim 14, wherein the aluminum alloy electrode layer contains at. 5 at% to 25 at% of nickel. 47. The bonded structure of a thin film circuit according to claim 15, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. 48. The bonding structure of a thin film circuit according to claim 16, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. The aluminum alloy electrode layer contains 0.5 to 5% to 25 at% of nickel, as described in the above. The bonding structure of the thin film circuit as described in claim 18, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. The bonding structure of the thin film circuit as described in claim 19, wherein the aluminum alloy electrode layer contains at·5 at% to 25 at% of nickel. 52. The bonded structure of the thin film circuit according to the second aspect of the invention, wherein the foregoing alloy electrode layer contains at. 5 at% to 25 at% of nickel. 53. The bonding structure of the thin film circuit according to claim 21, wherein the foregoing alloy electrode layer contains 0.5 at% to 25 at%. 54. The bonded structure of a thin film circuit according to claim 22, wherein the aforementioned aluminum alloy electrode layer contains at·5 at% to 25 at%. The bonding structure of the thin film circuit as described in claim 23, wherein the aforementioned alloy-free electrode layer contains at·5 at% to 25 at%. The bonding structure of the thin film circuit as described in claim 24, wherein the foregoing alloy electrode layer contains 0.5 to 15 at% of nickel. - 57. The bonding structure of the thin film circuit as described in claim 25, 2169-6972-PF 37, 98935 - wherein the aforementioned alloy electrode layer contains 0.5 to 5% to 25 at% of nickel. 58. The bonded structure of a thin film circuit according to claim 26, wherein the aforementioned alloy electrode layer contains 0.5 to 20 at% of nickel. The bonding structure of the thin film circuit as described in claim 27, wherein the aforementioned alloy electrode layer contains at·5 at% to 25 at% of nickel. 60. The joint structure of a thin film circuit according to claim 28, wherein the electrode layer of the foregoing alloy contains at·5 at% to 25 at% of nickel. 61. The bonding structure of the thin film circuit according to claim 29, wherein the foregoing alloy electrode layer contains 0.5 at% to 25 at% of nickel. 62. The bonded structure of a thin film circuit according to the third aspect of the invention, wherein the foregoing alloy electrode layer contains 〇·5 & 1:% to 25 at% of nickel. 6 3 - The bonding structure of the thin film circuit as described in claim 31, wherein the aluminum alloy electrode layer contains 0.5 to 20 at% of nickel. _ 6 4 · The bonding structure of the thin film circuit as described in the third paragraph of the Shen Qing patent scope, wherein the aforementioned electrode layer contains at·5 at% to 25 at% of nickel. The bonding structure of the film and the circuit according to any one of claims 1 to 4, wherein the aluminum alloy electrode layer contains 〇. 1 & 1:% to 7.5 at% of cobalt And / or iron. The bonding structure of the thin film circuit according to any one of claims 33 to 64, wherein the aluminum alloy electrode layer further contains at. 1 at% to 3.0 at%. The bonding structure of the thin film circuit according to claim 65, wherein the foregoing alloy electrode layer further contains at·1 at% to 3.0 at% of ruthenium. The bonding structure of the thin and 2169-6972-PF 38 1298351' circuit according to any one of claims 33 to 64, wherein the aforementioned aluminum alloy electrode layer contains 0.1 at% to ~ 3. 0 at % carbon. The carbon alloy layer has a carbon content of 0.1 to % to 3.00% by weight. The bonded structure of a thin film circuit according to claim 66, wherein the electrode layer of the above-mentioned alloy contains 0.1 at% to 3.Oat% of charcoal. 2169-6972-PF 39