1298141 m Λ 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種雜結構以及方法。尤其是指一種利用 焊材將蓋體以及設置於基板上之難識聰籤以及微元件封梦在 一起以增加封賴構抵抗齡環境之能力進而增加義識別標鐵 所能運用之環境之一種射頻識別標籤結合微元件之封裝結構與方 法。 口 ’、 • 【先前技術】 射頻識別元件是近年來極重要的發明之一，而其主要由 射頻識別標籤（RFID Tag)以及讀取器（Reader)所構成。射 頻識別技術可在不需藉助人力的情況下，透過無線通訊以 非接觸的方式自動將多個物件讀取，所以無論在清點貨物 或者是買賣商品，處理速度都會快很多。也因為如此，射 頻識別之技術也會逐漸的取代傳統的條碼辨識技術。 不過由於射頻識別標籤僅能達到儲存資訊之目的，如果 _ 可以將射頻識別標籤與微元件，例如：感測器、致動器、 被動元件或者是微機械元件等結合，使得射頻識別標籤變 成不只是儲存和傳輸資訊，而是可以將感測器所感測到之 資訊傳遞出去，進而提高射頻識別標籤的應用層面。 • 然而要將射頻識別標籤與微元件封裝在一起，在習用技 • 藝之封裝技術中，大多僅利用薄膜（film)者是箔膜（£〇;11) 來將射頻識別標籤包覆。對於能夠承受高溫、高酸驗度、 高機械應力之嚴苛環境下使用之射頻識別標籤的封裝技術 並不多見。傳統上，射頻識別樣籤的封裝採用塑膠或者是 1298141 高分子材料並利用黏膠接合，^ ^ 伸力小、_擊力也較差，類:料所能承受之拉 能承受高溫或者是高_•類接㈣的接合強度亦不 :==，紡織業所使用的_識別標藏，不論 過程所須受之扭力、剪力等種 洗滌 二所以需事先將射頻識別標籤取下， 因此在實際使用上造成許多困擾。 廿益此t 2用之封裝技術僅單純進行射頻識別標籤封裝， :=元:放置之空間，所以更限制了射頻識別標 姆s 不透光之封裝材料也會限制光感測元件 與射頻識別標籤之整合運用。 圖係1 參中閱基圖㈣戶Γ ’該圖係為習用之封裝結構示意圖。該 2為㈣民國專利第_⑽26號巾請案所揭露之封裝 技術’該封裝結構1包括有-第-晶片11、-第二晶片12 ^及-凸塊環13。該凸塊環13設置於 接 晶片η二接塾環15之間’以結合該第-凸塊環13由於沒有任成—密閉空腔16。不過該 ΐ，結構之精度，甚至傷害到被封裝 件之封裝。/、Ba片並無微封蓋的設計，亦不適合微元 矣示合上述，因此; 結構與綠料㈣峨標_錢元件之封裝 【發明内容】 1298141 本發明的主要目的是提供—種射頻識麟籤結合微元件之封 ，結構以及㈣，其係微賤將形成祕板上之射頻識別梗 籤以及微7G件封裝整合H翻適應溫度變化 蝕等嚴苛環境之目的。 鵰 本發明的次要目的是提供一種射頻識別標藏結合微元件之封 ^構以及方法’其_職封紐形成祕板上之射頻識別標 籤以及微播封裝整合在—起，朗提倾元件之轉空間以及 鲁 允許感測訊號傳輸之目的。 本發明的另—目的是提供—觀賴別標齡合微元件之封 裝結構以及方法，其係於微封蓋設置有微定位凹_及利用焊料 之再流動現象進行接合，達到提升對位精準度之目的。 一為了達到上述之目的，本發明提供一種射頻識別標籤結合微 =之封裝結構’包括：—基板，其係設置有_射頻識別標籤以 及與，射頻朗標籤作電性連接之—微元件；以及—微封蓋，其 ^覆，於該基板上而與該基板树接，該微封蓋具有—微凹槽以 φ 提供容置該射頻識別標籤以及該微元件。 為了達到上述之目的，本發明更提供一種射頻識別標籤結合 件之^裝方法，包括有下列步驟:形成一凸塊環於一基板上； ^亥凸塊環之區域内設置—射頻識職籤以及—微元件於該基板 • 將具有—微凹槽之—微封蓋覆蓋於該基板上使得該微凹槽與 :土板形成―腔室以容魏射頻朗標籤以及該微元件；以及加 …、該凸塊城其雜讀供連翻賴微封蓋錢絲板。 【實施方式】 為使貴審查委員能對本發明之特徵、目的及功能有更進一 7 1298141 步的認知與瞭解’下文特將本發明之裝置__部結構以及設 計的理念原由進行說明，以使得審查委員可以了解本發明之特 點，詳細說明陳述如下： 、 請參閱圖二A以及圖二C所示，其中圖二八係為本發明射頻 識別標籤結合微元件之封裝結構較佳實_麻示意圖；圖二C 係為係為本發明基板構造立體示意圖。本發明提供一 盖 其係包括-基板20以及-微封蓋21。該基板2G，其係設3一 射頻識別標籤22以及用-電線25與該射頻識麻籤22作電性連 接之-微元件23。該射賴別標籤22之觸具有感絲圈％與 該射頻識職㈣作雜連接’以提供接钱發射麵訊號之目 的。該微it件23可選擇為-感測器、—致動^、—微機械元件、 -被動元件或者是-積_路元件等，料在此限。絲板2〇， 則可為一矽晶圓基板、一有機基板、一醯亞胺—三氮口井 (Bismaleimide Triazine，BT)基板、一高分子材料基板、一低溫 共燒陶mow Temperature Cofiml Geramie，LTGG)基板或者是 玻璃基板專材料’但不在此限。 ^該，封蓋21，其係覆蓋於該基板2〇上而與該基板2〇相連接， 該微封蓋21具有-微凹槽212以提供容置該射頻識別標籤22以 及》亥微元件23。赫關二β所示，細係為本發明微封蓋之較 佳實施例示意圖。該微凹槽212周圍更形成有一微定位凹槽2ΐι。 在本實施例中，該微封蓋21係為膠狀玻璃(Spin Qn以咖，s〇g) 材料。再回到圖二A所示’該微封蓋21覆蓋於該基板2〇上，使 得該微凹槽212與該基板20間形成一腔室213以提供保護該微元 件23以及該射頻識別標籤22。 4微定位凹槽211與該基板2〇之間更具有可提供連接該基板 1298141 20與該微封蓋21之一凸塊環3〇。該凸塊環3〇係可為錫鉛合金等 焊接材料，以提供焊接該基板2〇與該微封蓋21。在該凸塊環3〇 與该基板20以及該微定位凹槽211間更形成有一導電層31，該導 電層31係可選擇為銅、鋁、金或銀等類之導電材料。為了加強導 電層31之附著力，於該導電層31與該基板2〇以及該微定位凹槽 211之間更具有一緩衝層32。該緩衝層32可選擇為鉻(Cr)戋者 鈦（Ti)等材料。 疋 請參閱圖三所示，該圖係為本發明射頻識別標籤結合微元件 之封裝發法較佳實酬触*意目。該麵酬結合微元件 之封裝方法4，係包括有下列步驟·· 步驟400-提供一基板以及具有一微凹槽之一微封蓋； 步驟401-於該基板上形成一緩衝層； 步驟402-於該緩衝層上形成一導電層； 步驟403-形成一凸塊環於該導電層上； 々驟404於遠凸塊環之區域内設置一射頻識別標籤以及一微 元件於該基板上，· 步驟405-於該微封蓋上之該微凹槽之周圍形成一微定位凹 槽； 步驟406-於該定位凹槽上形成一緩衝層； 步驟407-於該緩衝層上形成一導電層； 步驟408-形成一凸塊環於該導電層上； 步驟4G9-進行—被動式對準動作，將該微封蓋覆蓋於該基板 上，使得該定位為凹槽對準該基板上之凸塊環，進 而使得該微凹槽與該基板形成一腔室以容置該射頻 識別標籤以及該微元件；以及 1298141 輯41G-加熱該凸塊環使其魏以提供連觀定該微封蓋以 及該基板’成-主動式1¾•準動作。 δ月爹閱圖四土至圖四〇所示’該系列之圖示係為本發明之基 板形成方法流程示意圖’也就是說明該步驟4()1至該步驟備之 細部流程。如圖四Α所示，該基板2〇係為一石夕基板該基板2〇 上升/成有「氧化石夕層（Si〇2)2〇〇、一氮化石夕層（施)2〇1以及一光 :且層202首先以光罩50對該基板進行曝光以定義出一對準記 號之位置。接下來，進行如圖四B所示之步驟，進行顯 1該對準記號區域203上之光阻。然後再進行活性離子_ O^ive I〇n Etching，RIE )之製程去除該對準記號區域2〇3 1-氧化石夕以及氮切材料並去除光阻層2〇2以形成如圖四 結構。 接著以腿刻的方式去除該對準記號區域2〇3内之石夕 形成如圖四D之結構。隨後，進行如圖四E所示之步驟 上軸—_層32;魏_ 32係可峰渡的方式形 >力==可選擇為鉻或者是鈦。形成緩衝層32之目的是為了增 導電層之_。_再進拥四f之製程，於 、金或者是銀_之導電·，形成導 曰、疋為了當作後來形成該凸塊魏鍍沉積之導電板。 以方^=再於該導電層31上塗佈—触層施，塗佈的方式可 戶式峨’如圖四g所示。隨後，再進行如圖四Η 成凸塊環所需要之區域。完畢之後，再出形 區域上之光阻《形成_凹_域去 10 1298141 / 行如圖四J所示之步驟，於該凹部區域206a形成凸塊環3〇 ;該凸 塊環30可以使用電鍍的方式來形成，而該凸塊環3〇之材料可以 選擇錫鉛合金等焊接材料。隨後再進行圖四K之步驟，將該導電 層31上之殘餘光阻去除。 去除之後，再形成一光阻層208覆蓋於該凸塊環3〇以及該導 電層31上，如圖四L所示。然後，再進行圖四M所示之步驟，以 一光罩52對圖四L之結構進行曝光，其目的是為了定義留下覆蓋 於該凸塊環30上之光阻。之後再以顯影製程將不需要之光阻去 Φ 除’僅留下该凸塊環30上之光阻208，如圖四N所示。最後，再 去除不需要之緩衝層32、導電層31以及該凸塊環3〇上之光阻 208，以形成如圖四〇之結構；其中，去除該緩衝層犯、導電層 31之方式係以餘刻容液Cr-7來進行。上述四A至四〇之流程中， 在形成緩衝層32、導電層31以及光阻202、206、208時可以利用 遮蔽物將该對準記號區域203遮蔽，以保護該對準記號區域203。 接下來進行本發明之步驟404，在本實施例中，係以黏著劑將 射頻識別標籤22以及微元件23黏著固定於該基板2〇上之該凸塊 響環30内部之區域，隨後再以打線機連接電線25於該射頻識別標 籤22與該微元件23之間，並以打線機於該射頻識別標籤22周圍 形成感絲圈24，如圖二c所示之結構。形祕頻朗標籤22 以及微元件23於基板2G上之方式除了上述之外，也可以用半導 體製程事先於該基板2〇上製作。1298141 m 发明 Nine, invention description: [Technical field to which the invention pertains] The present invention relates to a heterostructure and method. In particular, it refers to a kind of environment in which the cover body and the hard-to-find sign and the micro-components disposed on the substrate are sealed together to increase the ability of the seal to resist the ageing environment and thereby increase the environment in which the target iron can be used. The RFID tag is combined with the package structure and method of the micro component. Port ', • [Prior Art] Radio frequency identification (RFID) is one of the most important inventions in recent years, and it is mainly composed of a radio frequency identification tag (RFID Tag) and a reader (Reader). The radio frequency identification technology can automatically read multiple objects in a non-contact manner through wireless communication without the need of manpower, so the processing speed will be much faster regardless of whether the goods are in stock or bought or sold. Because of this, the technology of radio frequency identification will gradually replace the traditional bar code identification technology. However, since the RFID tag can only achieve the purpose of storing information, if the RFID tag can be combined with a micro component such as a sensor, an actuator, a passive component or a micromechanical component, the RFID tag becomes Instead of storing and transmitting information, the information sensed by the sensor can be transmitted, thereby improving the application level of the RFID tag. • However, in order to package RFID tags with micro-components, most of the packaging technologies used in the art are foil films (11;) to cover the RFID tags. Packaging technology for RFID tags that can withstand high temperatures, high acidity, and high mechanical stress is rare. Traditionally, the RFID tag package is made of plastic or 1298141 polymer material and bonded with adhesive. ^ ^ Small extension force and poor _ impact force. Class: The material can withstand the high temperature or high. The joint strength of the joint (4) is also not: ==, the identification mark used by the textile industry, regardless of the torque, shearing force, etc. required for the process, so the RFID tag must be removed in advance, so the actual use It caused a lot of trouble. The package technology used in this t 2 is only for RFID tag packaging, := yuan: space for placement, so it limits the RFID tag s. The opaque package material also limits the light sensing component and radio frequency identification. The integration of labels. Figure 1 is a reference to the base map (4) household Γ 'This figure is a schematic diagram of the package structure used in the past. The package structure 1 disclosed in the Japanese Patent Application No. (10) No. 26, the package structure 1 includes a --wafer 11, a second wafer 12, and a bump ring 13. The bump ring 13 is disposed between the wafer η and the second ring 15 to bond the first bump ring 13 because there is no such thing as a closed cavity 16. However, the flaws in the structure, even the damage to the package of the package. /, Ba film does not have a micro-cap design, is not suitable for the micro-element display, therefore; structure and green material (four) 峨 mark _ money component package [invention content] 1298141 The main purpose of the present invention is to provide - RF The combination of the seal and the structure of the micro-components, and (4), the micro-small will form the radio frequency identification stem on the secret board and the integration of the micro- 7G package into the harsh environment such as temperature change and erosion. The secondary purpose of the present invention is to provide a radio frequency identification tag combined with a micro-component sealing structure and a method of 'radio identification tag on the secret plate of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The space and the purpose of allowing the transmission of the signal. Another object of the present invention is to provide a package structure and method for viewing the micro-components of the same age, which are provided with a micro-positioning concave _ and a reflow phenomenon using solder to achieve alignment precision. The purpose of the degree. In order to achieve the above object, the present invention provides a radio frequency identification tag incorporating a micro-package structure comprising: a substrate provided with a radio frequency identification tag and a micro component electrically connected to the radio frequency tag; a micro-cap that is coupled to the substrate on the substrate, the micro-cap having a micro-groove provided to accommodate the radio frequency identification tag and the micro-element. In order to achieve the above object, the present invention further provides a method for mounting a radio frequency identification tag binding member, comprising the steps of: forming a bump ring on a substrate; and setting a region in the area of the bump block - the radio frequency identification And a micro-component on the substrate, the micro-groove having a micro-groove covering the substrate such that the micro-groove and the soil plate form a chamber to accommodate the RF tag and the micro-component; ..., the bump city of its miscellaneous reading for the rumored micro-covering money silk board. [Embodiment] In order to enable the reviewing committee to have a further understanding and understanding of the features, objects and functions of the present invention, the following is a description of the structure of the device and the concept of the design of the present invention. The reviewer can understand the characteristics of the present invention. The detailed description is as follows: Please refer to FIG. 2A and FIG. 2C, wherein FIG. 28 is a preferred embodiment of the RFID tag of the present invention combined with the micro component package. Figure 2C is a schematic perspective view of the substrate structure of the present invention. The present invention provides a cover comprising a substrate 20 and a microcap 21 . The substrate 2G is provided with a radio frequency identification tag 22 and a micro component 23 electrically connected to the radio frequency identification tag 22 by a wire 25. The touch of the tag 22 has a sense of the wire loop % and the radio frequency (4) miscellaneous connection to provide the purpose of receiving the money transmission surface signal. The micro-injection 23 can be selected as - sensor, - actuation ^, - micro-mechanical component, - passive component or - product - circuit component, etc., to be limited thereto. The wire plate 2〇 can be a wafer substrate, an organic substrate, a Bismaleimide Triazine (BT) substrate, a polymer material substrate, and a low temperature co-fired mow Temperature Cofiml Geramie , LTGG) substrate or glass substrate special material 'but not limited to this. ^, the cover 21 is attached to the substrate 2A and connected to the substrate 2, the micro-cover 21 has a micro-groove 212 to provide the RFID tag 22 and the micro-component twenty three. The structure of the micro-cap is a schematic diagram of a preferred embodiment of the microcapsule of the present invention. A micropositioning groove 2ΐ is formed around the micro groove 212. In this embodiment, the micro-cap 21 is made of a colloidal glass (Spin Qn, s〇g) material. Returning to FIG. 2A, the micro-cap 21 covers the substrate 2 such that a cavity 213 is formed between the micro-groove 212 and the substrate 20 to provide protection for the micro-component 23 and the radio frequency identification tag. twenty two. 4 The micro-positioning groove 211 and the substrate 2 are further provided with a bump ring 3 可 which can connect the substrate 1298141 20 and the micro-cap 21 . The bump ring 3 can be a solder material such as a tin-lead alloy to provide soldering of the substrate 2 and the micro-cap 21 . A conductive layer 31 is further formed between the bump ring 3 and the substrate 20 and the micropositioning groove 211. The conductive layer 31 can be selected from conductive materials such as copper, aluminum, gold or silver. In order to enhance the adhesion of the conductive layer 31, a buffer layer 32 is further disposed between the conductive layer 31 and the substrate 2A and the micropositioning groove 211. The buffer layer 32 may be selected from a material such as chromium (Cr) or titanium (Ti).疋 Please refer to FIG. 3, which is a better embodiment of the RFID tag of the present invention combined with the micro-component package. The method of encapsulating the micro-components includes the following steps: Step 400 - providing a substrate and a micro-cap with a micro-groove; Step 401 - forming a buffer layer on the substrate; Forming a conductive layer on the buffer layer; step 403 - forming a bump ring on the conductive layer; and step 404: disposing a radio frequency identification tag and a micro component on the substrate in a region of the far bump ring Step 405 - forming a micro-positioning groove around the micro-groove on the micro-cap; step 406 - forming a buffer layer on the positioning groove; step 407 - forming a conductive layer on the buffer layer Step 408 - forming a bump ring on the conductive layer; Step 4G9 - performing a passive alignment action, covering the micro cover on the substrate such that the positioning is a groove aligned with the bump on the substrate a ring, such that the microgroove forms a chamber with the substrate to receive the radio frequency identification tag and the micro-component; and 1298141 series 41G-heats the bump ring to provide a micro-cap and The substrate is 'proactively active'. The figure of the series is shown in the flow chart of the method for forming the substrate of the present invention, which means that the step 4()1 to the detailed process of the step is described. As shown in FIG. 4A, the substrate 2 is a stone substrate, and the substrate 2 is raised/formed with "Oxidized Stone Layer (Si〇2) 2〇〇, a Nitride Layer (Shi) 2〇1 and A light: and the layer 202 first exposes the substrate with the mask 50 to define the position of an alignment mark. Next, the steps shown in FIG. 4B are performed to perform the display on the alignment mark area 203. The photoresist is then subjected to a process of reactive ion _O^ive I〇n Etching, RIE) to remove the alignment mark region 2〇3 1-the oxide oxide and the nitrogen cut material and remove the photoresist layer 2〇2 to form Figure 4. Structure. Then, the stone in the alignment mark area 2〇3 is removed in a leg-like manner to form the structure shown in Fig. 4D. Subsequently, the step shown in Fig. 4E is performed on the upper axis-_ layer 32; _ 32 is a way to cross the peak shape> Force == can be selected as chromium or titanium. The purpose of forming the buffer layer 32 is to increase the conductivity of the layer. _ Then enter the process of four f, Yu, Jin or Silver _ conductive, forming a guide, 疋 in order to form a conductive plate that later forms the bump deposition. The coating is then applied to the conductive layer 31. The coating method can be as shown in Fig. 4g. Then, the area required for the bump ring is as shown in Fig. 4. After completion, the photoresist on the emerging area is formed. _ domain goes to 10 1298141 / row as shown in FIG. 4J, forming a bump ring 3〇 in the recessed region 206a; the bump ring 30 can be formed by electroplating, and the material of the bump ring 3〇 A solder material such as a tin-lead alloy may be selected, and then the residual photoresist on the conductive layer 31 is removed by the step of FIG. 4K. After the removal, a photoresist layer 208 is formed to cover the bump ring 3 and the The conductive layer 31 is as shown in Fig. 4L. Then, the step shown in Fig. 4M is performed, and the structure of Fig. 4L is exposed by a mask 52, the purpose of which is to define the remaining coverage on the bump. The photoresist on the ring 30. The unnecessary photoresist is then removed by the development process to remove Φ except that only the photoresist 208 on the bump ring 30 is left, as shown in Fig. 4N. Finally, the unnecessary removal is required. a buffer layer 32, a conductive layer 31, and a photoresist 208 on the bump ring 3 to form a structure as shown in FIG. The method of removing the buffer layer and the conductive layer 31 is performed by using the residual liquid Cr-7. In the above four A to four processes, the buffer layer 32, the conductive layer 31, and the photoresists 202, 206 are formed. At 208, the alignment mark area 203 can be shielded by the mask to protect the alignment mark area 203. Next, step 404 of the present invention is performed, in this embodiment, the radio frequency identification tag 22 and the micro-adhesive are used as an adhesive. The component 23 is adhesively fixed on the inner surface of the bump ring 30 on the substrate 2, and then the wire 25 is connected between the radio frequency identification tag 22 and the micro component 23 by a wire bonding machine, and the wire is applied to the radio frequency. A wire loop 24 is formed around the identification label 22, as shown in Figure 2c. In addition to the above, the shape of the frequency-sensitive label 22 and the micro-element 23 on the substrate 2G may be previously formed on the substrate 2 by a semiconductor process.
. 接下來說明該步驟405、406、407以及408。請參閱圖五A 至圖五J所不’該圖係為於微封蓋形成凸塊環流程示意圖。首先 如圖五A所示之結構，於該微封蓋21之微凹槽212周圍形成一微 定位凹槽211，並形成一緩衝層32。接下來再形成一導電層31於 1298141 該緩衝層32之上，如圖五B所示。形成該緩衝層32以及導電層 31之目的、方法以及材料以於前文敘述，在此不做贅述。接下來， 進行圖五C之步驟，於該導電層31上形成一光阻33。然後進行如 圖五D所示之步驟，曝光以及顯影去除該微定位凹槽211内之光 阻，以便沉積凸塊環。接下來以電鍍之方式形成該凸塊環30於該 微定位凹槽211内之導電層31上，以形成如圖五E之結構。隨後 進行圖五F之步驟，以去除殘餘之光阻33。 接下來進行圖五G之步驟，於圖五F之結構上形成一光阻層 34。隨後進行圖五h之步驟，利用曝光以及顯影保留該微定位凹 槽211上之光阻層34，使該光阻層34可以保護該凸塊環3〇。接 下來去除該微定位凹槽211以外之緩衝層32以及導電層31，然後 再去除該微定位凹槽211内之光阻34，以形成圖五I之結構。 進行完步驟408之後，該步驟409係微將該微封蓋21與該基 板20進行初步之對位動作，也就是利用該微封蓋21之透光性， 將該微封蓋21之該微定仙槽211與該基板2()上之凸塊環3〇對 ，，以完成之初步對準機制。緊接著，進行該步驟41〇，加熱該微 定^凹槽^11卩及該基板20上之凸塊環3〇使其熔化，由於該凸 塊¥ 30制於金屬之料，所以在受鱗化之後會產生再流動 (reflow)現象，進而產生絲式對準之機制，此外該微定位凹槽 211也可確保該凸塊環3〇熔化後受到該微定位凹槽之限制而 =曰於又力ϋϋ巾產m雜護諸元件例如該賴識別標鐵 j以及微元件23不會受到炫化後之金屬焊料損傷。此外，該凸塊 =30—溶化後產生之輝料也會流到該對準記號區·，以增加接著 藉由柄明步驟4〇9之初步被動式對準，以及步驟 動式對準，即可達到精密封裝之目的。 1298141 唯以上所述者’僅為本發明之 =失:::依本發”請專利範圍所做 純明11之要義所在，尤其是本發明實施例之步驟僅 “、不、序僅為了說明而定，如有順序改變或相互置換， 亦不脫離本發明之精神和範圍，故都應視為本發明的進一步實施 狀況。 、 細合上述’本發明之封裝結構以及方法可以提高射頻識別標 籤之應用範圍’以及提升封裝結構之抵抗嚴苛環境之能力，進而 籲提高該產業之競爭力以及帶動週遭產業之發展，誠已符合發明專 利法所規定申請發明所需具備之要件，故爰依法呈提發明專利之 申請，謹請貴審查委員允撥時間惠予審視，並賜準專利為禱。 13 1298141 【圖式簡單說明】 圖一係為係為習用之封裝結構示意圖。 實 圖二A係為本發明射麵職籤結合微元狀雜結構較 施例剖面示意圖。 圖二B係為本發明微封蓋之較佳實施例示意圖。 圖二C係為本發明基板構造立體示意圖。Next, the steps 405, 406, 407, and 408 will be described. Please refer to Figure 5A to Figure 5J. This figure is a schematic diagram of the process of forming a bump ring in the micro-cap. First, as shown in FIG. 5A, a micro-positioning groove 211 is formed around the micro-groove 212 of the micro-cap 21 and a buffer layer 32 is formed. Next, a conductive layer 31 is formed over the buffer layer 32 of 1298141, as shown in FIG. 5B. The purpose, method, and material for forming the buffer layer 32 and the conductive layer 31 are described above and will not be described herein. Next, the step of FIG. 5C is performed to form a photoresist 33 on the conductive layer 31. Then, the steps as shown in Fig. 5D are performed, and the photoresist in the micropositioning groove 211 is removed by exposure and development to deposit a bump ring. Next, the bump ring 30 is formed on the conductive layer 31 in the micro-positioning groove 211 by electroplating to form a structure as shown in FIG. Subsequent steps of Figure 5F are performed to remove residual photoresist 33. Next, the step of Fig. 5G is performed to form a photoresist layer 34 on the structure of Fig. 5F. Subsequently, the step of Figure 5h is performed, and the photoresist layer 34 on the micro-positioning groove 211 is retained by exposure and development so that the photoresist layer 34 can protect the bump ring 3?. Next, the buffer layer 32 and the conductive layer 31 other than the micro-positioning groove 211 are removed, and then the photoresist 34 in the micro-positioning groove 211 is removed to form the structure of FIG. After step 408 is performed, the step 409 is to perform a preliminary alignment operation between the micro-cap 21 and the substrate 20, that is, by using the translucency of the micro-cap 21, the micro-cap 21 The stencil 211 is aligned with the bump ring 3 on the substrate 2() to complete the preliminary alignment mechanism. Then, the step 41 is performed to heat the micro-cavity groove 11 and the bump ring 3 on the substrate 20 to melt, and since the bump is made of metal, it is scaled. After the crystallization, a reflow phenomenon occurs, which in turn generates a mechanism for wire alignment. In addition, the micropositioning groove 211 also ensures that the bump ring 3 is melted and restricted by the micro positioning groove. Further, the components such as the ray-recognition target j and the micro-component 23 are not damaged by the glazed metal solder. In addition, the bump = 30 - the phosphor produced after the melting will also flow to the alignment mark area to increase the initial passive alignment followed by the step 〇9, and the stepwise alignment, ie It can achieve the purpose of precision packaging. 1298141 Only the above mentioned 'is only the present invention = lost:: according to the present invention", the essence of the patent scope is the essence of the 11th, especially the steps of the embodiment of the present invention are only ", no, the order is only a description Further, the present invention should be considered as further implementations of the present invention without departing from the spirit and scope of the invention. The above-mentioned 'encapsulated structure and method of the present invention can improve the application range of the radio frequency identification tag' and enhance the ability of the package structure to withstand harsh environments, and further appeal to improve the competitiveness of the industry and promote the development of the surrounding industry. In accordance with the requirements for applying for inventions as stipulated in the invention patent law, the application for invention patents shall be submitted in accordance with the law. Please ask the review committee to allow time for review and grant the patent as a prayer. 13 1298141 [Simple description of the diagram] Figure 1 is a schematic diagram of the package structure used in the past. The actual figure IIA is a schematic cross-sectional view of the injection surface of the present invention combined with the micro-element structure. Figure 2B is a schematic view of a preferred embodiment of the microcap of the present invention. Figure 2C is a perspective view showing the structure of the substrate of the present invention.
圖二係為本發明射頻識別標簸結合微元件之封裝發法較佳 例流程示意圖。 、& 圖四A至四〇係為本發明之基板形成方法流程示意圖。 " 至五I係為於微封蓋形成凸塊環流程示意圖。 【主要元件符號說明】 1〜習用封裝結構 11〜第一晶片 _ 12〜第二晶片 13〜凸塊環 14 ' 15-接墊環 16〜密閉空腔 2〜封裝結構 〜基板 200- 二氧化;g夕層 201- 碳化石夕層 202、206、208-光阻 14 1298141 203-對準記號區域 206a-凹部區域 21 -微封蓋 211- 微定位凹槽 212- 微凹槽 213- 腔室 22- 射頻識別標籤 23- 微元件 24- 感應線圈 25- 電線 30-凸塊環 3卜導電層 32-緩衝層 33、34-光阻層 4-封裝方法 400〜410_步驟 50、51、52-光罩FIG. 2 is a schematic flow chart of a preferred method for packaging and transmitting a radio frequency identification tag combined with a micro component according to the present invention. And FIG. 4A to FIG. 4 are schematic diagrams showing the flow of the substrate forming method of the present invention. " to the fifth I is a schematic diagram of the process of forming a bump ring in the micro-cap. [Main component symbol description] 1~ conventional package structure 11~first wafer _12~second wafer 13~bump ring 14' 15-pad ring 16~closed cavity 2~package structure~substrate 200-dioxide;夕层201-Carbide layer 202, 206, 208- photoresist 14 1298141 203-alignment mark area 206a-recess area 21 - micro-cover 211 - micro-positioning groove 212 - micro-groove 213 - chamber 22 - RFID tag 23 - Micro component 24 - Induction coil 25 - Wire 30 - Bump ring 3 Conductive layer 32 - Buffer layer 33, 34 - Photoresist layer 4 - Packaging method 400 ~ 410 - Steps 50, 51, 52- Mask