!293788 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種離子搶。 【先前技術】 電離提出了綱在_靜謝做往復運動之電子來 嫩了自觸。辦_祕 形式之輕形場離‘:。君。此後’沖她和細-鈿研製出另-種 源二L!遍採用之離子搶係熱陰極離子搶，其採用熱陰極作為電子發射 擊氣體，將氣體電離為等離+冑， 本：一般使_墨、•鎢鈽合金、==: 大得熱陰極離輪高。另外，由於熱陰極產生 射^，_縣冷，故，採_極作為電子發 【發明内容】 f鑒於此，有必要提供一種成本低、發射電子穩定、結構簡單之離子搶。 種離子搶’本發明提供—種離子搶，其包一 =!真空容器上設置有電子…子上二二 冷陰極裝ΐ鋼部，該陰極裝置位於電子注入孔處，該陰極裝置為場發射 術’該離子搶採用場發射冷陰極裝置作為電子發射源，場 離針不會雜，賴壽命長，不需要定期更換，因此該 3于樽”摊低，且場發射冷陰極發射電子比熱陰極發射電子穩定。另 降：!發射冷陰極作為電子發射源，由於場發射冷陰極的發射功率較熱 構&轉低’離子搶表面的溫雜低，無需水冷裝置，因此離子搶 【實施方式】 7 1293788 請參閱第一圖及第二圖，其為本發明實施例提供之離子搶1〇，該離子槍 10包括真空谷器11、一陽極14及場發射冷陰極裝置16，該容器11上設 置有離子姆孔13、電子仏孔15及紐17，該陽極14餅容器u - 内部。 “該容器11為圓筒形，其可由鉬、鋼或鈦等金屬製成，優選直徑為24毫 米(mm)、長度為50mm。使用時容器^接地，以防止電子被容器u截獲。 _該離子出射孔13位於容器u之一端，且與容器1;L同軸設置，優選直 徑為4mm。 離子出射孔13外面設有聚焦裝置12,該聚焦裝置;[2包括三個平行設置 之第一電極121、第二電極122及第三電極123，該三個電極121、122及123 | 分別具有第-通孔1211、第二通孔1221及第三通孔則，該三個通孔則、 1221、及1^31同軸設置，業界將該三個電極121、122及123之組合稱為三 膜孔透鏡。第-電極121、第二_ 122及第三電極123加上電壓時，離 子從離子出射孔13出射經過聚焦裝置12時，其運動軌迹就會被彙聚，生成 預定大小及能量的離子束^> 陽極14為一金屬環，優選該金屬環直徑為0.2mm，陽極14與容器U 同軸設置且垂直於容器u之軸線，並且陽極14位於容器1]L之中間位置。 由於該陽極14僅為一結構簡單之金屬環，因此電子在容器u中之運動執迹 長，離子之産額率高。 瞻電子注入孔15位於容器11之另一端，優選直徑大小為lmm，該電子注 入孔15位於容器11軸線之一側，這樣可減少電子回到電子注入孔之幾 率〇 對應電子注入孔15處設置有一場發射冷陰極裝置16，該場發射冷陰極 裝置16與谷器11電性相連，請參閱第三圖，該場發射冷陰板裝置％包括 場發射冷陰極161及栅極162，該場發射冷陰極161之電子出射端面向電子 注入孔15 ’電子經過栅極162及電子注入孔15進入容器η内。該場發射冷 陰極161可選用各種微尖結構，如奈米碳管、碳奈米纖維、碳奈米線:各^ 金屬微尖端、非金屬微尖端、化合物微尖端等尖狀結構或管狀、桿狀結構等， 亦可以選用各種薄膜，包括金剛石薄膜、氧化鋅(Ζη〇)薄膜、鉑薄膜、矽薄 8 1293788 * 、 膜、氧化矽(Si〇2)薄膜、氧化鈀师〇)薄膜等，本實施例中場發射冷陰極161 為奈米碳管。 補11之側面上至少設置有一個氣體入口 17，需要電離之氣體由該氣 - =口 17進入容器11内，該氣體一般為惰性氣體，如氬氣(Ar)、氫氣㈣、 氨氣㈣、氙氣(Xe)或者其中幾種之混合氣體。該氣體入口 17靠近電子注入 孔15，場發射冷陰極161産生之電子經過栅極162加速後由電子注入孔15 進入容1111内部，通過氣體入口 17進入之氣體在f子之撞擊下f離産生離 子，離子_刊射孔13發射出，經過聚焦裝置12形成所需要之離子束。 — 如第四圖及第五圖所示，離子搶10在使用時，容器11接地，場發射冷 陰f 161、栅極162及陽極14之.可依據離子搶1〇之實際尺寸調整，: _ 最佳ji作狀態。陽極14之餘在5(ΧΜ000伏 161之電位大約為i〇V，柵極162之電位為3〇v，拇極162之電位需要根據 場發射冷_ 161之特性献。離子搶1G之容^ u娜成馬麵靜電場， 由於電子狀孔15錄容H 11轴線之—側，注人之冑子很少回到電子注入 孔^内’利用靜電場電子振蕩原理，電子在容器u内發生多次振蕩，撞擊 由氣體入口 17進入之氣體，使氣體發生電離産生離子，以實現離子搶工 應具備之功能。 離子槍10在工作時，首先係場發射冷陰極161産生電子，電子經過拇 極1/2加速後通過電子注入孔15進入容器u内，在容器u内之馬鞍型靜 • 電場衫次振蕩，撞擊紐使其電魅生離子，離子由離子錄孔13射出， 經過聚焦裝置12後形成预定之離子束。 由於該離子搶10採用場發射冷陰極161作為電子産生源，場發射冷陰 極161産生電子所需要的功率要比熱陰極産生電子的功率低，場發射冷陰極 =1的發射功率通常為毫瓦級，比如鶴絲作的熱陰極，其熱發射轉一般為 成瓦至幾十瓦。1^極14結構簡單僅僅為一金屬環，從而使電子在容器u内 的運動執迹較長。由於電子〉主入孔15在容器11軸線的一側，這樣可以減少 電子回到電子注入孔15的幾率。 - A如第六圖所示，其為場發射冷陰極裝置16之第二種結構，該種結構為 一次電子發射結構，其包括場發射冷陰極261及二次電子發射體262。首先 9 1293788 :冷1ί極261發射電子，該電子打到二次電子發射體262上，並激發 =更夕的二次電子，二次電子由電子注人孔15進人辟⑽ 擊氣體使其電離產生離子，該二次電備物 -種如為ΐ發射冷陰極裝置16之第繼構，該結構亦係 場發射冷陰極361及二次電子發射體362。 Γ置—三角形凸起結構363，該凸起結構363凸向電 / L 5該一次電子發射體362的材料包括鉑或銅。 ，器u、離子出射孔13、陽極14及電子注入孔15之尺寸大小 狀態。疋’可根據各種具體情況作適當改動，以獲得離子搶1〇之最佳工作 符合發明專利要件傭提出專利申請。惟，以上所 ^«為本_之較佳實施方式’本發明之範圍並不以上述實 μ ===_一等 _ 或二 【圖式簡單說明】 第一圖係本發明實施例離子槍轴向截面結構示意圖。 第二圖係本發明實施例離子槍徑向截面結構示^圖。 第二圖係本發明實施例場發射冷陰極裝置之第一種纟士構厂、今” 第四圖係本發明實施例離子搶内電位分佈示意圖。丁w圖。 第五圖係本發明實施例離子搶内電子運動軌迹示意圖。 第六圖係本發明實施例場發射冷陰極裝置之第二種結構示立 第七圖係本發明實施例場發射冷陰極裝置之第三種^盖Γ思圖。 【主要元件符號說明】 -、、、雨不思圖。 離子搶 聚焦裝置 陽極 10 容器 12 離子出射孔 14 電子注入子匕 11 13 15 10 1293788 場發射冷陰極裝置 16 氣體入口 17 第一電極 121 第二電極 122 第三電極 123 場發射冷陰極 161、261、361 柵極 162 二次電子發射體 262、362 凸起結構 362 第一通孔 1211 第二通孔 1221 第三通孔 1231 11293788 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to ion robbing. [Prior Art] Ionization proposes an electron in the reciprocating motion to rejoice. The _ secret form of the light field away from ‘:. Jun. After that, 'I have made another kind of source and two L!! I used the ion-collecting hot cathode ion grab, which uses the hot cathode as the electron emission gas to ionize the gas into a phosgene + 胄, this: Make _ ink, • tungsten bismuth alloy, ==: large hot cathode off the wheel. In addition, since the hot cathode generates the radiation, the _ county is cold, so the _ pole is used as the electron emission. [Invention] In view of this, it is necessary to provide an ion rush which has low cost, stable electron emission, and simple structure. The invention provides the ion trapping, and the package is a =! The vacuum container is provided with electrons... the second two cold cathode mounted steel parts, the cathode device is located at the electron injection hole, and the cathode device is a field emission The 'electron ray grabs the field emission cold cathode device as the electron emission source, the field is not miscellaneous, the long life is long, and there is no need to replace it regularly. Therefore, the 3 樽 樽 摊 low, and the field emission cold cathode emission electrons are compared with the hot cathode emission. The electron is stable. Another drop:! The cold cathode is emitted as the electron emission source. Since the emission power of the cold cathode of the field emission is lower than that of the thermal structure and the low temperature of the ion-grabbing surface, there is no need for a water-cooling device, so the ion is grabbed. 7 1293788 Please refer to the first figure and the second figure, which are the ion grabs provided by the embodiment of the present invention. The ion gun 10 includes a vacuum barn 11, an anode 14 and a field emission cold cathode device 16 on the container 11. An ionic hole 13, an electronic boring 15 and a button 17 are provided, the anode 14 being a container u-inside. "The container 11 is cylindrical and can be made of metal such as molybdenum, steel or titanium, preferably 24 mm in diameter. (mm) Length of 50mm. When in use, the container is grounded to prevent electrons from being intercepted by the container u. The ion exit hole 13 is located at one end of the container u and is disposed coaxially with the container 1; L, preferably having a diameter of 4 mm. A focusing device 12 is disposed outside the ion exit hole 13 , and the focusing device includes two first electrodes 121 , a second electrode 122 and a third electrode 123 arranged in parallel, and the three electrodes 121 , 122 and 123 | respectively have The first through hole 1211, the second through hole 1221, and the third through hole, the three through holes, 1221, and 1^31 are coaxially disposed, and the combination of the three electrodes 121, 122, and 123 is referred to as three. Membrane lens. When a voltage is applied to the first electrode 121, the second _122, and the third electrode 123, when ions are emitted from the ion ejection hole 13 through the focusing device 12, the trajectories of the ions are concentrated to generate an ion beam of a predetermined size and energy. The anode 14 is a metal ring, preferably having a diameter of 0.2 mm, the anode 14 is disposed coaxially with the container U and perpendicular to the axis of the container u, and the anode 14 is located intermediate the container 1]L. Since the anode 14 is only a metal ring having a simple structure, the movement of electrons in the container u is long and the yield of ions is high. The electron injection hole 15 is located at the other end of the container 11, preferably having a diameter of 1 mm. The electron injection hole 15 is located on one side of the axis of the container 11, so that the probability of electrons returning to the electron injection hole is reduced, and the electron injection hole 15 is disposed. There is a cold cathode device 16 that is electrically connected to the valley device 11. Referring to the third figure, the field emission cold cathode device includes a field emission cold cathode 161 and a gate 162. The electron emission end of the emission cold cathode 161 faces the electron injection hole 15'. The electron enters the container n through the gate electrode 162 and the electron injection hole 15. The field emission cold cathode 161 can be selected from various microtip structures, such as carbon nanotubes, carbon nanofibers, carbon nanowires: metal microtips, non-metal microtips, compound microtips, etc. Rod-shaped structures, etc., can also choose a variety of films, including diamond film, zinc oxide (Ζη〇) film, platinum film, thin film 8 1293788 *, film, yttrium oxide (Si〇2) film, palladium oxide film) In the present embodiment, the field emission cold cathode 161 is a carbon nanotube. At least one gas inlet 17 is provided on the side of the fill 11, and the ionized gas enters the vessel 11 from the gas-= port 17, which is generally an inert gas such as argon (Ar), hydrogen (four), ammonia (four), Helium (Xe) or a mixture of several of them. The gas inlet 17 is adjacent to the electron injection hole 15. The electrons generated by the field emission cold cathode 161 are accelerated by the gate 162 and then enter the inside of the capacitor 1111 through the electron injection hole 15. The gas entering through the gas inlet 17 is generated by the impact of the f sub. The ions, ions, and perforations 13 are emitted, and the desired ion beam is formed by the focusing device 12. — As shown in the fourth and fifth figures, when the ion grab 10 is in use, the container 11 is grounded, and the field emission is cold and f 161, the gate 162 and the anode 14 can be adjusted according to the actual size of the ion grab: _ Best ji state. The anode 14 is at 5 (the potential of ΧΜ000 volt 161 is about i〇V, the potential of the gate 162 is 3〇v, and the potential of the thumb 162 needs to be based on the characteristics of the field emission cold _161. The ion grabs 1G capacity ^ u Na into the horse surface electrostatic field, because the electronic hole 15 records the H 11 axis - side, the injection of the scorpion rarely returns to the electron injection hole ^ inside the use of electrostatic field electronic oscillation principle, the electron in the container u Multiple oscillations occur, and the gas entering from the gas inlet 17 is struck, so that the gas is ionized to generate ions, so as to achieve the function of ion rushing. When the ion gun 10 is in operation, firstly, the cold cathode 161 is emitted from the field to generate electrons, and the electrons pass through. After the thumb 1/2 is accelerated, it enters the container u through the electron injection hole 15, and the saddle type static electric field shirt in the container u oscillates, hitting the button to make the electric enchantment ion, and the ion is emitted from the ion recording hole 13 and is focused. A predetermined ion beam is formed after the device 12. Since the ion trap 10 uses the field emission cold cathode 161 as an electron generating source, the field emission cold cathode 161 requires less power to generate electrons than the hot cathode generates electrons, and the field emission cold cathode = 1 hair The emission power is usually in the order of milliwatts, such as the hot cathode of the crane wire, and its thermal emission is generally from watts to tens of watts. The structure of the 1^ pole 14 is simply a metal ring, so that the movement of electrons in the container u The trace is longer. Since the electrons> the main entrance hole 15 is on one side of the axis of the container 11, this reduces the probability of electrons returning to the electron injection hole 15. - A is a field emission cold cathode device 16 as shown in the sixth figure. The second structure, which is a primary electron emission structure, includes a field emission cold cathode 261 and a secondary electron emitter 262. First, 9 1293788: cold 1 ί pole 261 emits electrons, and the electrons hit the secondary electron emitter On the 262, and exciting = secondary electrons, the secondary electrons are entered by the electron injection hole 15 (10), the gas is ionized to generate ions, and the secondary electricity preparation - such as the ΐ emission cold cathode device 16 In the first configuration, the structure is also a field emission cold cathode 361 and a secondary electron emitter 362. The —-triangular convex structure 363, the convex structure 363 is convex toward the electric / L 5 material of the primary electron emitter 362 Including platinum or copper. U, ion exit hole 13, anode 14 and the size and state of the electron injection hole 15. The 疋' can be appropriately modified according to various specific conditions to obtain the best work of the ion grab 1 in accordance with the patent application of the invention patent. However, the above is based on _ BEST MODE FOR CARRYING OUT THE INVENTION The scope of the present invention is not based on the above-mentioned real μ ===_一等_ or two [simplified description of the drawings] The first figure is a schematic diagram of the axial cross-sectional structure of the ion gun of the embodiment of the present invention. The radial cross-sectional structure of the ion gun according to the embodiment of the present invention is shown in the figure. The second figure is the first gentleman structure factory of the field emission cold cathode device according to the embodiment of the present invention, and the fourth figure is the ion grab in the embodiment of the present invention. Schematic diagram of potential distribution. The fifth figure is a schematic diagram of the electron trajectory of the ion grab in the embodiment of the present invention. Figure 6 is a second structural view of a field emission cold cathode device according to an embodiment of the present invention. The seventh figure is a third type of field emission cold cathode device according to an embodiment of the present invention. [Main component symbol description] -,,, rain does not think. Ion grabber device anode 10 container 12 ion exit hole 14 electron injection port 11 13 15 10 1293788 field emission cold cathode device 16 gas inlet 17 first electrode 121 second electrode 122 third electrode 123 field emission cold cathode 161, 261, 361 gate 162 secondary electron emitter 262, 362 convex structure 362 first through hole 1211 second through hole 1221 third through hole 1231 11