TWI293406B - Pattern forming method and electric device fabricating method using the same - Google Patents
Pattern forming method and electric device fabricating method using the same Download PDFInfo
- Publication number
- TWI293406B TWI293406B TW092132065A TW92132065A TWI293406B TW I293406 B TWI293406 B TW I293406B TW 092132065 A TW092132065 A TW 092132065A TW 92132065 A TW92132065 A TW 92132065A TW I293406 B TWI293406 B TW I293406B
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- Taiwan
- Prior art keywords
- layer
- titanium
- metal
- mask
- pattern
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 128
- 239000010410 layer Substances 0.000 claims description 433
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 241
- 229910052751 metal Inorganic materials 0.000 claims description 121
- 239000002184 metal Substances 0.000 claims description 121
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 102
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 93
- 239000010936 titanium Substances 0.000 claims description 93
- 229910052719 titanium Inorganic materials 0.000 claims description 92
- 239000004408 titanium dioxide Substances 0.000 claims description 70
- 239000004065 semiconductor Substances 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 61
- 238000005530 etching Methods 0.000 claims description 60
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 239000004973 liquid crystal related substance Substances 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 26
- 150000004706 metal oxides Chemical class 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 16
- 230000005661 hydrophobic surface Effects 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 230000005660 hydrophilic surface Effects 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 10
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 9
- 230000002209 hydrophobic effect Effects 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910052755 nonmetal Inorganic materials 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 238000000746 purification Methods 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002585 base Substances 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 230000001568 sexual effect Effects 0.000 claims description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 150000002013 dioxins Chemical class 0.000 claims 1
- 238000002309 gasification Methods 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims 1
- 239000005871 repellent Substances 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229960005196 titanium dioxide Drugs 0.000 description 97
- 229920002120 photoresistant polymer Polymers 0.000 description 36
- 230000008569 process Effects 0.000 description 25
- 239000010409 thin film Substances 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910019923 CrOx Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- AJZRPMVVFWWBIW-UHFFFAOYSA-N [Au].[Bi] Chemical compound [Au].[Bi] AJZRPMVVFWWBIW-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BAQNULZQXCKSQW-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Ti+4] BAQNULZQXCKSQW-UHFFFAOYSA-N 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Description
1293406 五、發明說明（1) 【發明所屬之技術領域 本發明係屬一圖案形成方 使用此方法之電性裝置製造方 製程。 〇 法，尤指一圖案形成方法與 法，其具有簡單且低成本的 【先前技術】 —旦關般而5 ，圖案製程除了是決定半導體裝置的效能與 鍵因素外’也決定了該裝置的空間特性。目前，為 ΐΐί導體裝置效能已做了許多努力，另-方面，許多研 九’、二烈的進仃中，特別是藉由形成一理想的金屬圖案而 改：：導體裝置的效能（電路圖案）。事實上，形成圖案 的製程並不僅僅用於半導體裝置，其也可應用於印刷電路 板或平面顯示器如液晶顯示器（Liquid Crystal DispUy1293406 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a pattern forming method using an electrical device manufacturing method using the method. 〇 method, especially a pattern forming method and method, which has a simple and low-cost [prior art] - as in the case of 5, the pattern process in addition to determining the performance and key factors of the semiconductor device 'also determines the device Spatial characteristics. At present, many efforts have been made for the performance of the conductor device. In addition, many researches have been carried out, especially by forming an ideal metal pattern: the performance of the conductor device (circuit pattern) ). In fact, the patterning process is not only used for semiconductor devices, but also for printed circuit boards or flat-panel displays such as liquid crystal displays (Liquid Crystal DispUy).
Device, LCD)與電漿顯示面板（piasma Device pa PDP )等。 目前所用於形成圖案的方法中最有效的是使用一光 =。第1A至1F圖顯示習知技藝中以一光阻形成圖案的順序 v驟。如第1A®所示’-光阻如_光敏感材料沉積於一基 板1的金屬層3上以形成一光阻層5，其中該基板】為一 材料如玻璃或一半導體材料。 、 接著，如第1B圖所示，烘烤該光阻層5。之後，如 第1C圖所示，一光罩7置於該光阻層5的上方並照射一光線 如一紫外光。一般而言，該光阻可為一正光阻或一負光 阻’在本例中，該光阻以一負朵 ' 1293406 五、發明說明（2) 如第1 D圖所示，當該光阻層5以一光線照射後，遭受 照光之區域會產生化學結構變化，因此當提供一顯影劑 ^，未照光的部分將會被移除而形成一光阻圖案以。接 著，如第1E圖所示，當提供一蝕刻液至該光阻圖案5a與該 金屬層3後，該光阻圖案5a下的一金屬圖案仏會被保留因 為該光阻圖案5a擋住該蝕刻液而保留該光阻圖案5a下的一 部份該金屬層3。之後，如第1F圖所示，當提供一去光阻 劑於該光阻圖案5a後，只剩該金屬圖案3a仍保留於該基板 1上。 以一光阻形成該金屬圖案之方法會產生一些問題。首 ，，該，製程步驟相當複雜。例如，該光阻圖案的形成需 =光阻=積n曝光以及顯影等步驟。烘烤該光阻需 溫度進行一弱烘#，接著再以-較高的溫度進 仃一強烘烤，如此就會使得製程步驟更加複雜。 弟一點’生產成本昂貴。播舍 A,j 的電性裝置如-電晶體時一二制複數個圖案 光阻製程形成另一圖案。每一圖宰2 / 、一圖案而另一 光阻製程線，，每當增加圖匕；：需要； 製造成本也跟著增加H I ^ 1：性裝置的 用-光阻以形成圖案的花費就古:、電晶體的製造中’使 第三點，以-光阻;費的4。〜·。 引起製程環境的污染。—般而古Y =時，若處理失當將會 (Spin Coating)方式沉積，咅浐=卩且疋以旋轉覆蓋 過程中被拋棄不用，而由雷性部分的光阻在沉積的 冤比裝置的材料成本而言，光阻Device, LCD) and plasma display panel (piasma Device pa PDP). The most effective method currently used to form patterns is to use a light =. Figures 1A through 1F show the sequence of forming a pattern with a photoresist in the prior art. As shown in Fig. 1A, a photoresist such as a photo-sensitive material is deposited on the metal layer 3 of a substrate 1 to form a photoresist layer 5, wherein the substrate is a material such as glass or a semiconductor material. Then, as shown in FIG. 1B, the photoresist layer 5 is baked. Thereafter, as shown in Fig. 1C, a photomask 7 is placed over the photoresist layer 5 and irradiated with a light such as ultraviolet light. In general, the photoresist can be a positive photoresist or a negative photoresist. In this example, the photoresist is a negative one. 1293406 V. Description of the Invention (2) As shown in Figure 1D, when the light After the resist layer 5 is irradiated with a light, the area subjected to illumination will undergo a chemical structural change, so when a developer is provided, the unilluminated portion will be removed to form a photoresist pattern. Next, as shown in FIG. 1E, after an etchant is supplied to the photoresist pattern 5a and the metal layer 3, a metal pattern under the photoresist pattern 5a is retained because the photoresist pattern 5a blocks the etching. The liquid retains a portion of the metal layer 3 under the photoresist pattern 5a. Thereafter, as shown in Fig. 1F, after a photoresist is applied to the photoresist pattern 5a, only the metal pattern 3a remains on the substrate 1. The method of forming the metal pattern with a photoresist causes some problems. First, the process steps are quite complicated. For example, the formation of the photoresist pattern requires steps of photoresist = product n exposure and development. Baking the photoresist requires a temperature to perform a weak bake, followed by a strong bake at a higher temperature, which complicates the process steps. Younger, 'production costs are expensive. The electrical device of A, j, such as - the transistor, is made up of a plurality of patterns, and the photoresist process forms another pattern. Each figure kills 2 /, one pattern and another photoresist process line, whenever the graph is added;: need; manufacturing cost is also increased by HI ^ 1: the use of the device - photoresist to form the pattern costs : In the manufacture of the transistor, 'make the third point, take the - photoresist; the fee of 4. ~·. Causes pollution of the process environment. When the general Y = =, if the processing is improper, it will be deposited by spin coating, 咅浐 = 卩 and 疋 will be discarded during the rotation cover process, and the resist of the lightning portion is deposited in the 冤 ratio device. In terms of material cost, photoresist
1293406 五、發明說明（3) · 的拋棄也增加了生產成本。 第四點，可能會導致電性裝置的瑕/疵。例如，以旋轉 覆蓋方式沉積一光阻層時，其厚度無法精確的控制。若該 光阻層的厚度不均勻時，在完成一圖案製程後，未被去除 的光阻可能會殘留在圖案的表面上而導致該電性裝置瑕庇 的產生。 明提出一圖案形成方法 ，其實質上可消除習知 標在提供一可靠且有效成本的圖案 基板上 罩以照 刻該鈦 罩蝕刻 【發明内容】 鑑此，本發 性裝置製造方法 與缺點。 本發明之目 法。 本發明之另 其可簡化製造步 本發明之其 際實施本發明中 說明與圖式以及 為求本發明 廣泛說明，在此 鍅刻附屬層於一 層上；利用一光 分該鈦層上；钱 鈦圖案作為一遮 一目標在提供一 驟與降低製造成 他特性與優點將 所體悟。本發明 專利範圍中特別 之優點並與本發 提供一圖案形成 與使用此方 技藝所引起 形成方 示器之製造方法， ;形成一鈦（T i 光法形成 層以形成 該兹刻附 法之電 的限制_ 液晶顯 本 〇 於下列說明中了解或於實 之目的與優點亦會於下列 指出以被了解與獲得。 明之目的一致，並具體且 之方法 其包含：形成一 層於該蝕刻附屬 一氧化鈦（T i Ox )層於部 一氧化鈦圖案；以該氧化 屬層；移除該氧化鈦層。1293406 V. Invention Description (3) · Abandonment also increases production costs. The fourth point may result in 瑕/疵 of the electrical device. For example, when a photoresist layer is deposited in a rotating cover, the thickness cannot be precisely controlled. If the thickness of the photoresist layer is not uniform, after the completion of a pattern process, the photoresist that has not been removed may remain on the surface of the pattern to cause the electrical device to be shielded. A pattern forming method is proposed which substantially eliminates the conventional method of providing a reliable and effective cost on a patterned substrate to etch the titanium mask. SUMMARY OF THE INVENTION The present invention is a method and a disadvantage of the present invention. The object of the invention. The invention is further simplified in the practice of the invention. The invention is described and illustrated in the accompanying drawings and the invention is broadly described, in which the subsidiary layer is engraved on one layer; The titanium pattern as a cover object will be realized in providing a sudden and reduced manufacturing characteristics and advantages. A particular advantage of the scope of the present invention and a method of forming a display that is caused by the pattern forming and use of the present invention, forming a titanium (T i photo-forming layer to form the engraved method) Limitations of electricity _ Liquid crystal display is understood in the following description or the purpose and advantages of the following are also pointed out in the following points to be understood and obtained. The purpose of the description, and the specific method includes: forming a layer on the etching accessory A titanium oxide (T i Ox ) layer is patterned on the titanium oxide layer; the oxide layer is formed; and the titanium oxide layer is removed.
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五、發明說明（4) 另一方面，一圖案形成之方法.，其包含：形成一蝕刻 附屬層於一基板上；形成一鈦層於該蝕刻附屬層上；氧化 部分該鈦層而形成一氧化鈦圖案；以該氧化鈦圖案作為一 遮罩而触刻該蝕刻附屬層；以及移除該氧化鈦圖案。 另一方面，一圖案形成之方法，其包含：形成一蝕刻 附屬層於一基板上；於該蝕刻附屬層上形成一氧化鈦層包 含一第一區域與一第二區域；利用一光罩以照光法照射一 光線至該氧化鈦層，姓刻該氧化鈦層之第二區域；以該氧 化鈦層之第一區域作為遮罩鍅刻該蚀刻附屬層；以及移除 該氧化鈦層之第一區域。 另一方面，一圖案形成之方法，其包含：形成一蝕刻 附屬層於一基板上；形成一氧化鈦層於該蝕刻附屬層上； 轉變該氧化鈦層之表面由疏水性（Hydr〇ph〇bic)至親水 性（Hydrophilic)使該氧化鈦層具有一疏水性表面與一 親水性表面；蝕刻部分該氧化鈦層的疏水性表面以形成一 親水性的氧化鈦圖案；以該親水性的氧化鈦圖案作為一遮 罩而蝕刻該蝕刻附屬層；以及移除該親水性的氧化鈦圖 案。 " 另一方面，一圖案形成之方法，其包含：提供一蝕刻 附屬層；形成一金屬層於該蝕刻附屬層上；氧化部分該金 屬層以形成一金屬氧化層與一非金屬氧化層；以一第一勉 刻工具移除該非金屬氧化層；以該金屬氧化層作為遮罩而 敍刻該鍅刻附屬層；以及以一第二蝕刻工具蝕刻該 化層。 、’甸私5. Description of the Invention (4) In another aspect, a pattern forming method includes: forming an etched auxiliary layer on a substrate; forming a titanium layer on the etched auxiliary layer; oxidizing a portion of the titanium layer to form a a titanium oxide pattern; the etched subsidiary layer is engraved with the titanium oxide pattern as a mask; and the titanium oxide pattern is removed. In another aspect, a method of patterning includes: forming an etched auxiliary layer on a substrate; forming a titanium oxide layer on the etched auxiliary layer comprising a first region and a second region; Illuminating a light to the titanium oxide layer by photolithography, engraving the second region of the titanium oxide layer; etching the etching auxiliary layer with the first region of the titanium oxide layer as a mask; and removing the titanium oxide layer An area. In another aspect, a pattern forming method includes: forming an etched auxiliary layer on a substrate; forming a titanium oxide layer on the etched auxiliary layer; and transforming a surface of the titanium oxide layer by hydrophobicity (Hydr〇ph〇 Bic) to Hydrophilic such that the titanium oxide layer has a hydrophobic surface and a hydrophilic surface; etching a portion of the hydrophobic surface of the titanium oxide layer to form a hydrophilic titanium oxide pattern; with the hydrophilic oxidation The titanium pattern etches the etched auxiliary layer as a mask; and the hydrophilic titanium oxide pattern is removed. " In another aspect, a pattern forming method includes: providing an etched auxiliary layer; forming a metal layer on the etched auxiliary layer; oxidizing a portion of the metal layer to form a metal oxide layer and a non-metal oxide layer; Removing the non-metal oxide layer by a first engraving tool; etching the engraved auxiliary layer with the metal oxide layer as a mask; and etching the layer with a second etching tool. Dean
1293406 五、發明說明（5) 另一方面丄一液晶顯示器的製造方法，其包含：提供 一基板；以一第一金屬遮罩層形成一閘極於該基板上；沉 積一閘絕緣層以覆蓋該基板；以一第二金屬遮罩層形成一 半導體層於該閘絕緣層上；以_第三金屬遮罩層作為一遮 罩而形成一源/没電極於該半導體層上；形成一純化層以 覆蓋該基板；以及沉積一晝素電極於該鈍化層上。 另一方面，一製造半導體裝置的方法，其包含：沉積 —絕緣層於該半導體基板上；形成一金屬層於該絕緣層、 上；形成一鈦層於該金屬層上；利用一光罩照射一光線至 該鈇層以形成一氧化鈦遮罩層與一鈦遮罩層；蝕刻該氧化· 欽遮罩層而形成一氧化鈦圖形；以該氧化鈦圖形作為一遮 罩蝕刻該金屬層並移除該氧化鈦層而形成一閘極；以及 入離子至該半導體基板以形成—源/汲區。 另-方面，-製造半導體裝置的方法，其包含：沉積 一絕緣層於該半導體基板上；形成一金屬層於該絕緣層、 上；形成一氧化鈦層於該金屬層上；照射一光線至部分該 氧，鈦層上以改變該氧化鈦層之表面由疏水性至親水性使 該氧化鈦層具有一疏水性表面與一親水性表面；蝕刻部分 該氧化鈦層的疏水性表面以形成一親水性的氧化鈦圖^刀 以該親水性的氧化鈦圖案作為一遮罩蝕刻該金屬層而形成 一閘極；以及植入離子至該半導體基板以形成一源/汲 〇 至此，由上列敘述應可了解本發明之目的、特色、 點輿方法，如下將對本發明更進一步詳細敘述並伴隨圖=1293406 V. Description of the Invention (5) In another aspect, a method of fabricating a liquid crystal display, comprising: providing a substrate; forming a gate on the substrate by a first metal mask layer; depositing a gate insulating layer to cover a substrate; a semiconductor layer is formed on the gate insulating layer by a second metal mask layer; and a source/no electrode is formed on the semiconductor layer by using a third metal mask layer as a mask; forming a purification a layer covering the substrate; and depositing a halogen electrode on the passivation layer. In another aspect, a method of fabricating a semiconductor device includes: depositing an insulating layer on the semiconductor substrate; forming a metal layer on the insulating layer; forming a titanium layer on the metal layer; and illuminating with a mask a light is applied to the germanium layer to form a titanium oxide mask layer and a titanium mask layer; etching the oxide mask layer to form a titanium oxide pattern; etching the metal layer with the titanium oxide pattern as a mask and Removing the titanium oxide layer to form a gate; and implanting ions into the semiconductor substrate to form a source/german region. In another aspect, a method of fabricating a semiconductor device, comprising: depositing an insulating layer on the semiconductor substrate; forming a metal layer on the insulating layer; forming a titanium oxide layer on the metal layer; and irradiating a light to Part of the oxygen layer on the titanium layer to change the surface of the titanium oxide layer from hydrophobic to hydrophilic to make the titanium oxide layer have a hydrophobic surface and a hydrophilic surface; etching a portion of the hydrophobic surface of the titanium oxide layer to form a The hydrophilic titanium oxide film forms a gate by etching the metal layer as a mask with the hydrophilic titanium oxide pattern; and implanting ions to the semiconductor substrate to form a source/汲〇, to the above The description should be able to understand the purpose, features, and methods of the present invention, and the present invention will be further described in detail below with accompanying figures =
mmMm
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以解釋本發明。 【實施方式】 以下將會對本發明作註 圖示說明。 之具體 本發明的具體實施例中，_ 屬取代習知技藝中的光阻作為在 擋蝕刻液至該蝕刻附屬層的材料。 蝕刻附屬層上的金屬層以形成一金屬 圖案作為一遮罩蝕刻該蝕刻附屬層以 ^ 本發明的具體實施例中，一部份 氧化物。形成該金屬氧化物的方法為 中提供一能量於該金屬。該金屬與該 的蝕刻選擇率（Etching Selection 金屬與該金屬氧化物可因顯影不同而 不同氣體蝕刻時具有差異效果一般 陳述，範例也將會以 以一金屬 蝕刻該蝕 換言之， 圖案後， 形成圖案。 的金屬氧化為一金屬 於一開放或含氧環境 物具有不同 因此，該 其如同可被 構成，即以 刻附屬層時 姓刻一在該 利用該金屬 金屬氧化 Ratio ) 被區分， 劑或蝕刻氣體可單就蝕刻該金屬或金屬氧化物 擇性蝕刻。另外，也可改變該金屬氧化物的表 當照射一光線至該金屬氧化物表面時可將該表 改變至親水性，再利用一適當的顯影劑即可得 形。 所以，一適當的顯影 而作為一選 面特性，如 面由疏水性 到需要的圖 上述的該金屬可為欽，欽於空氣中穩定但若於空氣或 含氧環境中加熱則會轉變為氧化鈦（T i 〇x )。因為鈦與氧 化鈦具有不同的蝕刻選擇率，當一部份的鈦氧化為氧化鈦To explain the invention. [Embodiment] The present invention will be described below. DETAILED DESCRIPTION OF THE INVENTION In a particular embodiment of the invention, the photoresist in the prior art is used as a material to block the etchant to the etched subsidiary layer. The metal layer on the subsidiary layer is etched to form a metal pattern as a mask to etch the etched subsidiary layer to a portion of the oxide in a particular embodiment of the invention. The method of forming the metal oxide provides an energy to the metal. The metal and the etching selectivity (Etching Selection metal and the metal oxide may have different effects when different gases are etched due to development. Generally speaking, the example will also etch the etch with a metal, in other words, after patterning, forming a pattern The metal is oxidized to a metal in an open or oxygen-containing environment. Therefore, it can be formed as if it were formed by engraving the subsidiary layer, and then by using the metal metal to oxidize, the agent or the etching. The gas can be selectively etched by etching the metal or metal oxide. Alternatively, the surface of the metal oxide may be altered to change the surface to hydrophilicity when a light is applied to the surface of the metal oxide, and then formed by a suitable developer. Therefore, a proper development as a face-selecting feature, such as the surface from hydrophobic to the desired pattern, can be used in the above-mentioned metal, which is stable in the air but is converted to oxidation if heated in an air or oxygen-containing environment. Titanium (T i 〇x ). Because titanium and titanium oxide have different etching selectivity, when a part of titanium is oxidized to titanium oxide
1293406 五、發明說明（7) 並提供-特定的顯影劑時，可得到一氧化鈦圖案。 當一特定波長的光線照射至該氧化鈦時，該氧彳卜获沾 表面將由疏水性轉變為親水性匕，的 的特性可獲得-特定氧二ί ;;與; a 寺疋氧化鈦圖案即可得到所需的圖案。 产本發明的具體實施例中的圖案形成方法也可利 J導2為一遮罩層而在不同的薄膜上形成圖·。例如 置^:器中不同的電極、走線、絕緣圖案、半 杰古=、旦素 或其他相似物可藉由本發明的圖案形 作。所謂「遮罩層」意指鈦或氧化鈦作為一遮蓋 層以遮蓋一部份钱刻附屬層。 、、、 在本發明的具體實施例中形成金屬圖案的方法將於下伴 隨圖示說明。第2Α至2F圖係本發明中一實施例的圖案形成 順序步驟TF意圖’將以在—金屬層上形成圖案作為範例。 另外，本發明的金屬圖案形成法，理所當然亦可製作其他 圖案如半導體圖案與絕緣圖案等。 如第2Α圖所示，一金屬層丨03 (如鋁）形成於一基板 101—上。一飲層110形成於該金屬層丨〇3上，其中該鈦層ιΐ() 可藉由與該金屬層103相同設備的蒸鍍或濺鍍製程（音耜 相同條件與製程環境）製作。 n 接著，如第2B圖，一光線（如紫外光或雷射）利用一 光罩1 0 7 射至一區域而形成一金屬圖形。該光線的照射 提供該鈦層1 0 0 —能量。此時，該紫外光或雷射的照射使 得空氣或一含氧環境氧化該鈦層11〇。接著，該鈦層11〇的1293406 V. Inventive Note (7) and providing a specific developer, a titanium oxide pattern is obtained. When a specific wavelength of light is irradiated to the titanium oxide, the surface of the oxygen-absorbing surface will be changed from hydrophobic to hydrophilic, and the characteristics of the specific oxygen can be obtained. The desired pattern can be obtained. The pattern forming method in the specific embodiment of the present invention can also be used to form a mask layer on different films. For example, different electrodes, traces, insulation patterns, semi-aged, denier or the like in the device can be formed by the pattern of the present invention. By "mask layer" is meant titanium or titanium oxide as a cover layer to cover a portion of the auxiliary layer. The method of forming a metal pattern in a specific embodiment of the present invention will be described below with reference to the drawings. The second to second embodiment of the present invention is a pattern forming step TF intended to be exemplified by forming a pattern on the -metal layer. Further, in the metal pattern forming method of the present invention, it is a matter of course that other patterns such as a semiconductor pattern and an insulating pattern can be produced. As shown in Fig. 2, a metal layer 丨03 (e.g., aluminum) is formed on a substrate 101. A drink layer 110 is formed on the metal layer 丨〇3, wherein the titanium layer ΐ() can be fabricated by the same evaporation or sputtering process as the metal layer 103 (same conditions and process environment). n Next, as in Figure 2B, a ray (such as ultraviolet light or laser) is incident on a region using a reticle 107 to form a metal pattern. The illumination of the light provides the titanium layer 100-energy. At this time, the irradiation of the ultraviolet light or the laser causes the titanium layer 11 to be oxidized by air or an oxygen-containing atmosphere. Next, the titanium layer 11 is
第12頁 1293406 五、發明說明（8) 表面先氧化’ 一段時間後，該鈦層1丨〇將完全氧化為一氧 化鈦層11 0 a。 如第2 C圖’該氧化鈦層11 〇 &被一非氧化的鈦層11 〇 b所 ί哀繞’其中該氧化鈦層1丨〇 a之後將在該金屬層丨〇 3上作為 形成圖案之用。接著，如第2D圖，該鈦層11〇1)被移除而形 成一特定形狀的氧化鈦層11 〇a，即一氧化鈦圖形。該鈦層 11 Ob可藉由一濕餘刻製程或一乾蝕刻製程而移除。該濕蝕 刻製程中，常以一酸類如氫氟酸（HF )作為顯影劑，氫氟 酸並不與氧化鈦反應而與鈦反應成為鈦化氟（TiF )因此 可被移除。所以’如第2D圖，藉由氫氟酸可只移除該鈦層_ 110b而保留該氧化鈦圖案11〇a於該金屬層1〇3上。除了硫 酸（馬SO4 )以外也可使用氫氟酸以外的酸類，因為鈦並不 與SO4離子反應。至於該乾蝕刻製程方面，可使用一般作為 餘刻氣體的氯氣（Cl2 )或含有氯之混合氣體 (CF4 /C丨2 /〇2 ) ’其钱刻氧化鈦的速率遠小於以相同氣體餘 3欽的速率。所以，當該金屬層丨〇 3經由濕蝕刻或乾蝕刻 $程敍刻時，該氧化鈦圖案11(^阻擋了該蝕刻液（濕蝕刻 製程）或該蝕刻氣體（乾蝕刻製程），因此不在該氧化鈦 圖案110a之下的金屬層將被移除，如第π圖所示。 “接者，如第2 F圖，該氧化欽圖案11 〇 a餘刻後被移除而 裸路出所需的金屬圖案l〇3a。該氧化鈦圖案11〇&可藉由一 屬钱刻或一乾蝕刻製程移除。該濕蝕刻製程可使用硫酸， f為硫酸中的s〇4 —離子會與氧化鈦反應而可移除氧化鈦以 得到所需的圖案。該乾敍刻製程的蝕刻氣體可使用氯氣/Page 12 1293406 V. INSTRUCTIONS (8) The surface is first oxidized' After a period of time, the titanium layer 1 丨〇 will be completely oxidized to a titanium oxide layer 11 0 a. As shown in FIG. 2C, the titanium oxide layer 11 〇 & is smeared by a non-oxidized titanium layer 11 〇 b, wherein the titanium oxide layer 1 丨〇 a will be formed on the metal layer 丨〇 3 For pattern use. Next, as in Fig. 2D, the titanium layer 11〇1) is removed to form a specific shape of the titanium oxide layer 11 〇a, i.e., a titanium oxide pattern. The titanium layer 11 Ob can be removed by a wet residue process or a dry etching process. In the wet etching process, an acid such as hydrofluoric acid (HF) is often used as a developer, and hydrofluoric acid does not react with titanium oxide to react with titanium to form titanium fluoride (TiF) and thus can be removed. Therefore, as in Fig. 2D, only the titanium layer _110b can be removed by hydrofluoric acid and the titanium oxide pattern 11〇a is retained on the metal layer 1〇3. In addition to sulfuric acid (horse SO4), acids other than hydrofluoric acid can also be used because titanium does not react with SO4 ions. As for the dry etching process, chlorine gas (Cl2) or a mixed gas containing chlorine (CF4 / C丨2 / 〇2) can be used as a residual gas, and the rate of titanium oxide is much smaller than that of the same gas. Chin's rate. Therefore, when the metal layer 丨〇3 is etched by wet etching or dry etching, the titanium oxide pattern 11 blocks the etching liquid (wet etching process) or the etching gas (dry etching process), and thus is not The metal layer under the titanium oxide pattern 110a will be removed, as shown in the figure π. "Acceptor, as shown in Fig. 2F, the oxidized pattern 11 〇a is removed after a moment and the naked road is taken out. The desired metal pattern l〇3a. The titanium oxide pattern 11〇& can be removed by a genus or a dry etching process. The wet etching process can use sulfuric acid, and f is sulfuric acid in the s〇4-ion The titanium oxide reacts to remove the titanium oxide to obtain a desired pattern. The etching gas for the dry etching process can use chlorine gas/
第13頁 1293406 五、發明說明（9) 虱氣（Cl〆％)或四氟化碳/氯氣等以得到所需 的圖案。 第3 A至第3C圖顯示本發明形成—實際圖案的放大 圖。第3 A至第3C圖顯不顯示一氧化鈦遮罩用以形成不 類型的圖案。第3A圖為一照片，特別顯示一基板上的氧化 鈦遮罩位於一絕緣層如氮化矽（SiNx)上。第⑽圖為—照 片，顯示一基板上的氧化鈦遮罩位於一非晶矽層上而該; 晶矽層位於一絕緣層如氮化矽（SiNx)上。第扎圖為—照 片顯不一基板上的氧化鈦遮罩位於一氧化銦錫層上。如 以上照片所示，本發明的圖案形成法中，不同的遮罩可分 別於-絕緣層、一半導體層與一金屬層上形成圖案。 :如^㈣圖，圖案的獲得也可以利用該金屬 物如軋化鈦的疏水性與親水性特性。儘管於下只舉出 圖案形成方法中的一例，然而氧化鈦的金 二'二形Λ圖案在不同的金屬上。如第4Α圖，-金屬層 一_ ’呂'儿積於一絕緣材料（如玻璃）的基板201上。 二二氧：鈦沉積於該金屬層2〇3上以形成-二氧化鈦層 金化ί層210可直接以蒸鍍法或濺鍍法形成於該 照=得之或將欽沉積於該金屬層2°3上後再以加熱或 ? η 7广士後“如第4B圖’一光線如紫外光或雷射，由-光罩 207上方照射至該二氧化鈦層的部分區 雷射的照射使得二氧化鈦的表面轉為親水性。-般而言 二虱化鈦被視為一光觸媒材料（ph〇t〇cataiyUc 第14頁 1293406 五、發明說明（ίο)Page 13 1293406 V. INSTRUCTIONS (9) Helium (Cl〆%) or carbon tetrafluoride/chlorine gas to obtain the desired pattern. Figs. 3A to 3C show enlarged views of the formation-actual pattern of the present invention. Figures 3A through 3C show no titanium oxide mask for forming a non-type pattern. Fig. 3A is a photograph showing in particular a titanium oxide mask on a substrate on an insulating layer such as tantalum nitride (SiNx). Figure (10) is a photograph showing that the titanium oxide mask on a substrate is on an amorphous germanium layer; the germanium layer is on an insulating layer such as tantalum nitride (SiNx). The first picture shows that the titanium oxide mask on the substrate is located on the indium tin oxide layer. As shown in the above photograph, in the pattern forming method of the present invention, different masks may be patterned on the -insulating layer, a semiconductor layer and a metal layer. : As shown in Fig. 4, the pattern can also be obtained by utilizing the hydrophobicity and hydrophilicity of the metal such as rolled titanium. Although only one example of the pattern forming method is given below, the gold bismuth 'dimorphism pattern of titanium oxide is on a different metal. As shown in Fig. 4, the metal layer _ 'Lu' is deposited on a substrate 201 of an insulating material such as glass. Dioxo: Titanium is deposited on the metal layer 2〇3 to form a titanium dioxide layer. The layer 210 can be directly formed by vapor deposition or sputtering in the photo or deposited on the metal layer 2 After the temperature is above or after η 7 Guangshi, as in Figure 4B, a light such as ultraviolet light or laser, the laser irradiated to the portion of the titanium dioxide layer above the reticle 207 causes the titanium dioxide to The surface is converted to hydrophilic. In general, titanium dioxide is considered as a photocatalyst material (ph〇t〇cataiyUc page 14 1293406. V. Description of invention (ίο)
Ma t er i a 1 )並具有疏水性。當該紫外光或雷射照射至二氧 化欽表面日守’其表面會產生氮氧自由基（OH Radical )而 使得該表面性質轉為親水性。 第5圖係一紫外光照射時間與一接觸角之關係圖。第5 圖中，一曲線a代表由賤鑛法形成的一二氧化鈦層，一曲 線b代表由電裝輔助化學氣象彡儿積法（Plasma Enhanced Chemical Vapor Deposition，PECVD)形成的一二氧化鈦 層，一曲線c代表由電漿輔助化學氣象沉積法於1 〇 〇溫度 下形成的一二氧化鈦層。而該接觸角意指當一液體於一固 體的表面達成熱力學平衡時所形成的角度。該接觸角是可籲 濕性的一指標，也就是該固體表面的親水性特性，其中親 水性越強則接觸角越小。第5圖顯示當一紫外線照射至該 二氧化鈦層時，該接觸角減小。再者，當一紫外線照射至 該二氧化鈦層時超過一小時時，該接觸角趨近於零，意指 其具有一強親水性。 如第4C圖所示，經由紫外線或雷射的照射後，該二氧 化鈥層211分為具親水性表面的一第一二氧化鈦層21〇&與 具有疏水性表面的一第二二氧化鈦層210b。如上述，當提 供一硫酸或一鹼金屬基蝕刻液於該具有不同表面特性的二 氧化鈦層時，具有親水性的該第一二氧化鈦層21〇a的氫氧_ 自由基並不與硫酸中的SO*離子結合。也就是說，該氫氧自 由基保護該該二氧化鈦層2 11表面的親水性。因此，只有 具有疏水性的該第二二氧化鈦層2 1 Ob會被蝕刻液移除。所 以，如第4D圖所示，所需的圖形，也就是具有親水性的該Ma t er i a 1 ) and is hydrophobic. When the ultraviolet light or laser is irradiated onto the surface of the oxidizing surface, the surface of the oxidized surface is nitrogenated (OH Radical) to make the surface property hydrophilic. Figure 5 is a graph showing the relationship between the ultraviolet light irradiation time and a contact angle. In Fig. 5, a curve a represents a titanium dioxide layer formed by a bismuth ore method, and a curve b represents a titanium dioxide layer formed by a Plasma Enhanced Chemical Vapor Deposition (PECVD). c represents a layer of titanium dioxide formed by plasma-assisted chemical weather deposition at a temperature of 1 Torr. The contact angle means the angle formed when a liquid reaches a thermodynamic equilibrium on the surface of a solid. The contact angle is an indicator of the wettability, that is, the hydrophilic property of the solid surface, wherein the stronger the hydrophilicity, the smaller the contact angle. Fig. 5 shows that the contact angle is reduced when an ultraviolet ray is irradiated to the titanium dioxide layer. Further, when an ultraviolet ray is irradiated to the titanium dioxide layer for more than one hour, the contact angle approaches zero, meaning that it has a strong hydrophilicity. As shown in FIG. 4C, after irradiation with ultraviolet rays or laser light, the ceria layer 211 is divided into a first titanium dioxide layer 21 having a hydrophilic surface and a second titanium oxide layer 210b having a hydrophobic surface. . As described above, when a sulfuric acid or an alkali metal-based etching solution is provided on the titanium dioxide layer having different surface characteristics, the hydrogeno-oxygen radical of the first titanium dioxide layer 21〇a having hydrophilicity is not SO with sulfuric acid. * Ion binding. That is, the hydroxide base protects the hydrophilicity of the surface of the titanium dioxide layer 2 11 . Therefore, only the second titanium dioxide layer 2 1 Ob having hydrophobicity is removed by the etching liquid. Therefore, as shown in Fig. 4D, the desired pattern, that is, the one having hydrophilicity
1293406 五、發明說明（11) 層2 11與具有親水性的該第一二氧化鈦層2丨〇 a將 保留於該金屬層203上。 )接著，如第4 E圖所示，提供一蝕刻溶液以移除所有的 汶金屬層2 0 3除了覆蓋於該具有親水性的二氧化鈦層2^與 ，有親水性的該第一二氧化鈦層2丨〇a的部分外。之後，: ，4F圖所不，以氣氣/氮氣（C1〗/N2 )或四 JVU2)㈣該第一二氧化鈦層21。3而裸露該：屬孔 203a於該基板2〇1上。 ” 2上述，本發明所提出的圖案形成法中，該圖案的形 成疋利用一金屬如鈦及金屬氧化物蝕刻速率的不同盥金 表的表面性質來達成。典型的鈦與二氧化鈦製程是 腔中完成，而大多數的製程與半導體裝置及顯示 二一真空腔中完成。31此，鈦舆二氧化鈦亦可利用 ==器的製程來完成，…簡化其製造過程並 案形成法可應用於製作不同的圖案如金屬圖 =门：：圖案與半導體圖案等1外，該方法也可 性裝置如半導體裝置或顯示器如液晶顯示器等。、 本發明將於下提出一利用該圖案形成法以製造一電性 5 :首先’第6圖至第9圖將用以說明一液晶顯示器的製造 ^法。液晶顯示器中如全透式的平面面板顯示器 =:issive Flat panel DispUy 廣泛 用於各種不同的電性裝置如行動電話、個人數位助理文 (PDA)或筆記型電腦中。液晶顯示器較其他的平面面板 1293406 五、發明說明（12) " ' " ----- =示器較為實用，因其具有厚度薄與重量輕並可提供高畫 質影像的優點。當數位電視、高畫質電視與掛牆式電視的 需求增加時，將大尺寸的液晶顯示器應用於電視的研究正 熱絡進行中。一般而言，液晶顯示器可依其控制液晶分子 的方法分為幾種不同的類型。現今，一動態矩陣薄膜電晶 體（Active Matrix Thin Film Transistor)液晶顯示器 因其反應時間迅速與影像殘留較短而正被廣泛的使用。° 第6圖顯示一薄膜電晶體液晶顯示器（tft LCD )的一 面板350結構。如第6圖所示，複數個橫向分布的閘線351 與複數個縱向分布的資料線352於一液晶顯示面板35〇上定_ 義出複數個晝素。一般而言，N X Μ的畫素是以n條閘線 3 5 1與Μ條資料線3 5 2共同形成。本圖只顯示一個畫素故在 此解釋之。 一 如第6圖所示，一薄膜電晶體3 53位於每一個畫素中， 其包含一閘極35 4連接一閘線351，一半導體層355於該閘 極上並在提供一訊號至該閘極354時被驅動，以及一源極 356與一沒極357 —同於該半導體層355上。一晝素電極359 位於母一畫素中’其中該畫素電極359連接該沒極357，以 致當該半導體層3 5 5被驅動時一影像訊號可經由該源極3 5 6纏| 與該沒極357提供至該畫素電極359，進而控制其液晶。一 黑矩陣372位於該薄膜電晶體353、該閘線351以及該資料 線352上方以避免露光，也避免光對該該薄膜電晶體353造 成影響。 第7圖顯示該液晶顯示器的結構。如第7圖所示，該閘1293406 V. INSTRUCTION DESCRIPTION (11) Layer 2 11 and the first titanium dioxide layer 2 丨〇 a having hydrophilicity remain on the metal layer 203. Then, as shown in FIG. 4E, an etching solution is provided to remove all of the tempering metal layer 2 0 3 except that the hydrophilic titanium dioxide layer is coated, and the first titanium dioxide layer 2 is hydrophilic. Outside the part of 丨〇a. Thereafter, the 4F map is not, the gas/nitrogen gas (C1)/N2) or the four JVU2) (4) the first titanium dioxide layer 21. 3 is exposed: the pores 203a are on the substrate 2〇1. 2 In the above-mentioned pattern forming method, the formation of the pattern is achieved by using a surface property of a metal such as titanium and a metal oxide having different etching rates. The typical titanium and titanium dioxide process is in the cavity. This is done, and most of the process is completed in the semiconductor device and the display chamber. 31. Titanium dioxide titanium dioxide can also be processed by the process of ==, simplifying the manufacturing process and forming the method can be applied to different production The pattern is as follows: metal pattern = gate: pattern and semiconductor pattern, etc., and the method is also a device such as a semiconductor device or a display such as a liquid crystal display, etc., the present invention will be proposed to use the pattern forming method to manufacture an electric Sex 5: First, 'Fig. 6 to 9 will be used to illustrate the manufacturing method of a liquid crystal display. For example, a full-transparent flat panel display in a liquid crystal display =:issive Flat panel DispUy is widely used in various electrical devices. Such as mobile phones, personal digital assistants (PDAs) or notebook computers. LCD monitors compared to other flat panels 1293406 V. Inventions (12) " ' " ----- = The display is more practical because it has the advantages of thin thickness and light weight and can provide high-quality images. When the demand for digital TV, high-definition TV and wall-mounted TV increases, The application of large-sized liquid crystal displays to television research is in progress. In general, liquid crystal displays can be classified into several different types according to their methods of controlling liquid crystal molecules. Nowadays, a dynamic matrix thin film transistor (Active Matrix) Thin Film Transistor) liquid crystal displays are being widely used due to their rapid response time and short image retention. ° Figure 6 shows a panel 350 structure of a thin film transistor liquid crystal display (tft LCD) as shown in Figure 6. The plurality of laterally distributed gate lines 351 and the plurality of longitudinally distributed data lines 352 define a plurality of pixels on a liquid crystal display panel 35. In general, the pixels of the NX 是以 are n gate lines. 3 5 1 is formed together with the data line 3 5 2 . This figure shows only one pixel and is explained here. As shown in Fig. 6, a thin film transistor 3 53 is located in each pixel, which contains One gate 35 4 a gate line 351, a semiconductor layer 355 is driven on the gate and is provided with a signal to the gate 354, and a source 356 is coupled to a gate 357. The germanium electrode is 359 is located in the mother pixel 'where the pixel electrode 359 is connected to the gate 357, so that when the semiconductor layer 35 5 is driven, an image signal can be wrapped by the source 3 5 6 | To the pixel electrode 359, the liquid crystal is controlled. A black matrix 372 is located above the thin film transistor 353, the gate line 351 and the data line 352 to avoid exposure, and light is prevented from affecting the thin film transistor 353. Fig. 7 shows the structure of the liquid crystal display. As shown in Figure 7, the gate
第17頁 1293406 五、發明說明（13) 極354位於該下基板360上，其中該閘極354由一金屬構成 而該下基板3 6 0由一透明絕緣材料如玻璃所構成。一閘絕 緣層36 2沉積於該下基板360的全部表面上並覆蓋該閘極 354。該半導體層355位於該閘絕緣層362上，而該源極356 與該汲極357則位於該半導體層355上，其中該源極356與 該〉及極357由一金屬構成。 一純化層364形成於該下基板3 60上並位於該源極356 與該没極357的上方。一畫素電極359位於該鈍化層364上 並藉由該鈍化層364中的一接觸孔365而與該薄膜電晶體 353的沒極357達成電相連，其中該晝素電極359以一透明· 金屬如氧化銦錫（Indium Tin Oxide，ITO)所構成。該 黑矩陣3 72位於一上基板3 70並作為一光遮蔽層以避免光漏 至該晝素中的非顯示區與該薄膜電晶體353區而造成畫質 降低’其中該畫素中的非顯示區即為一畫素與另一畫素間 的區域。另外，一彩色濾光片層3 7 4位於一影像顯示區以 k供一實際色彩。儘管圖中並未顯示，一透明金屬（如氧 化銦錫）所構成的共用電極位於該彩色滤光片層Μ 4上。 一液晶層380位於具有該薄膜電晶體353的下基板36〇與具 有該彩色濾、光片層374的該上基板3 7〇中間，以上結構共同4 完成一液晶顯示器。 本發明的液晶顯示器製造方法可使用一五道光罩步驟 的光罩製程，其包含：一閘極354的形成步驟，一半導體 層的355形成步驟’ 一源極356與一汲極357的形成步驟， 一純化層364中的接觸孔365形成步驟以及一畫素電極359Page 17 1293406 V. INSTRUCTION DESCRIPTION (13) The pole 354 is located on the lower substrate 360, wherein the gate 354 is made of a metal and the lower substrate 306 is made of a transparent insulating material such as glass. A gate insulating layer 36 2 is deposited on the entire surface of the lower substrate 360 and covers the gate 354. The semiconductor layer 355 is located on the gate insulating layer 362, and the source 356 and the drain 357 are located on the semiconductor layer 355. The source 356 and the gate 357 are made of a metal. A purification layer 364 is formed on the lower substrate 306 and above the source 356 and the gate 357. A pixel electrode 359 is disposed on the passivation layer 364 and electrically connected to the gate 357 of the thin film transistor 353 by a contact hole 365 in the passivation layer 364, wherein the halogen electrode 359 is a transparent metal. Such as indium tin oxide (Indium Tin Oxide, ITO). The black matrix 3 72 is located on an upper substrate 370 and serves as a light shielding layer to prevent light from leaking into the non-display area of the pixel and the thin film transistor 353 area, thereby causing image quality degradation. The display area is the area between one pixel and another. In addition, a color filter layer 374 is located in an image display area for an actual color. Although not shown, a common electrode made of a transparent metal such as indium tin oxide is located on the color filter layer Μ 4 . A liquid crystal layer 380 is located between the lower substrate 36 having the thin film transistor 353 and the upper substrate 307 having the color filter and optical layer 374. The above structure is common to complete a liquid crystal display. The liquid crystal display manufacturing method of the present invention can use a mask process of five mask steps, including: a step of forming a gate 354, a step of forming a semiconductor layer 355, and a step of forming a source 356 and a drain 357. a contact hole 365 forming step in a purification layer 364 and a pixel electrode 359
1293406 五、發明說明（14) 的形成步驟。習 用時機為該閘金 該半導體沉積步 積步驟與該鈍化 晝素電極的金屬 積步驟之後。與 示以圖案形成法 驟中，每一圖案 化鈦）間的兹刻 不同而形成。 知技藝使用光 屬層沉積步驟 驟與該源金屬 層沉積步驟之 沉積步驟之間 本發明相較， 製造一液晶顯 皆利用一金屬 選擇率而形成 阻的製造 與該半導 沉積步驟 間，該純 ，以及該 第2A至2F 示器。也 (如鈦） ，或以二 方法中， 體沉積步 之間，該 化層沉積 畫素電極 圖與第4A 就是在每 與其氧化 氧化鈦表 光阻的使 驟之間^ 源金屬沉 步驟與該 的金屬沉 至4F圖顯 一微影步 物（如氧 面性質的1293406 V. Formation steps of the invention (14). The conventional timing is after the metal deposition step of the semiconductor deposition step and the passivated halogen electrode. In the pattern forming method, each patterned titanium) is formed differently. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Pure, and the 2A to 2F display. Also (such as titanium), or in the second method, between the bulk deposition steps, the layer deposits the pixel electrode map and the 4A is between each of its oxidized titanium oxide surface resists The metal sinks to the 4F image and exhibits a lithographic step (such as an oxygen surface)
第8A圖至第8G圖係顯示本發明中一液晶顯示器的製造 方法’其將鈥沉積並氧化以形成圖案。雖然並未顯示於圖 中’其亦可利用二氧化鈦表面性質的不同作為製造該液晶 顯示器的方法。首先，如第^圖，一金屬沉積於一下基板 360上而形成一金屬層354a，再沉積一鈦層305於該金屬層 3 54a上，其中該金屬可為鋁、鋁合金或銅，而該下基板可 微一透明材料如玻璃。接著，將一光罩3〇7置於該鈦層3〇5 上方’再以一光線如紫外線或雷射照射該鈦層3 〇 5，該鈦 層3 0 5上照光之部分則氧化成氧化鈦。之後，如第8 B圖所 示’提供一蝕刻液（一酸類如氫氟酸）將該鈦層305移除 而保留一氧化鈦圖案30 5a於該金屬層354a上。當一蝕刻液 提供於該金屬層354a時，除了一部份被該氧化鈦圖案305a 遮蓋的該金屬層354a外，其他的該金屬層354a都將被移 除。接著，蝕刻該氧化鈦圖案305a後，一閘極354則形成Figs. 8A to 8G are views showing a method of manufacturing a liquid crystal display of the present invention, which deposits and oxidizes germanium to form a pattern. Although not shown in the drawings, it can also utilize the difference in surface properties of titanium dioxide as a method of manufacturing the liquid crystal display. First, as shown in FIG. 4, a metal is deposited on the lower substrate 360 to form a metal layer 354a, and a titanium layer 305 is deposited on the metal layer 3 54a, wherein the metal may be aluminum, aluminum alloy or copper. The lower substrate may be a transparent material such as glass. Next, a mask 3〇7 is placed over the titanium layer 3〇5, and the titanium layer 3〇5 is irradiated with a light such as ultraviolet light or laser, and the portion of the titanium layer 305 is oxidized to oxidation. titanium. Thereafter, an etchant (an acid such as hydrofluoric acid) is supplied as shown in Fig. 8B to remove the titanium layer 305 to retain a titanium oxide pattern 30 5a on the metal layer 354a. When an etchant is supplied to the metal layer 354a, the other metal layer 354a is removed except for a portion of the metal layer 354a covered by the titanium oxide pattern 305a. Then, after etching the titanium oxide pattern 305a, a gate 354 is formed.
第19頁 1293406Page 19 1293406
於該下基板360上。 接著，如第8C圖，以一化學氣象沉積法（Chemical Vapor DeP〇sition，CVD)形成一閘絕緣層％〗以覆蓋該下 基板360的所有表面。一半導體層355a沉積於該閘絕緣層 362上。接著’另一鈦層316形成於該半導體層託“上，以 光罩3 0 8 ,¾•、射一光線如紫外光或雷射於該敛層31 6上使得 未被4光罩308所遮蔽的部分氧化為氧化欽。 之後，如第8D圖，提供一蝕刻液（一酸類）於該鈦層 316，因該鈦層316中的氧化鈦而可得到一氧化鈦圖案。該 氧化鈦圖案遮蓋一部份的半導體層355a，因此，以一钱刻鲁 氣體蝕刻該半導體層355a與該氧化鈦圖案後，只剩一半導 體層355仍保留在該閘絕緣層362上。 如第8E圖所示，該源極356與該没極357形成於該半導 體層355上而完成一薄膜電晶體，其中該源極356與該没極 357以一金屬構成如鉻、鉬、鋁、鋁合金、或銅等。儘管 並未圖示，該源極356與該汲極357可以與製作該閘極354 相同之製程而形成，即照光至一鈦層以氧化該鈦層，其中 未被氧化的鈦層將被蝕刻而形成一氧化鈦圖案。之後可利 用該氧化鈦圖案而形成該源極356與該汲極357。 f 如第8F圖，該鈍化層364形成於該下基板360上的該薄 膜電晶體處。接著，沉積一透明金屬如氧化銦錫以形成該 畫素電極359。該畫素電即359經由該鈍化層364的一接觸 孔365而與該薄膜電晶體的汲極357達成電相連。而該畫素 電極359與該鈍化層364中的接觸孔365可以一鈦的微影製On the lower substrate 360. Next, as shown in Fig. 8C, a gate insulating layer % is formed by a chemical vapor deposition (CVD) to cover all surfaces of the lower substrate 360. A semiconductor layer 355a is deposited on the gate insulating layer 362. Then, 'the other titanium layer 316 is formed on the semiconductor layer carrier, with the photomask 3 0 8 , 3⁄4•, emitting a light such as ultraviolet light or laser on the collecting layer 31 6 so that it is not covered by the 4 mask 308 The masked portion is oxidized to oxidized. Thereafter, as shown in Fig. 8D, an etchant (monoacid) is provided on the titanium layer 316, and a titanium oxide pattern is obtained due to the titanium oxide in the titanium layer 316. A portion of the semiconductor layer 355a is covered. Therefore, after etching the semiconductor layer 355a and the titanium oxide pattern with a gas, only one semiconductor layer 355 remains on the gate insulating layer 362. As shown in FIG. 8E The source 356 and the gate 357 are formed on the semiconductor layer 355 to complete a thin film transistor. The source 356 and the gate 357 are made of a metal such as chromium, molybdenum, aluminum, aluminum alloy, or Copper or the like. Although not shown, the source 356 and the drain 357 may be formed in the same process as the gate 354, that is, irradiated to a titanium layer to oxidize the titanium layer, wherein the unoxidized titanium layer Will be etched to form a titanium oxide pattern, which can then be shaped using the titanium oxide pattern The source 356 and the drain 357. f. As shown in Fig. 8F, the passivation layer 364 is formed on the thin film transistor on the lower substrate 360. Next, a transparent metal such as indium tin oxide is deposited to form the pixel. The electrode 359 is electrically connected to the drain 357 of the thin film transistor via a contact hole 365 of the passivation layer 364. The contact hole 365 of the pixel electrode 359 and the passivation layer 364 can be a titanium lithography
第20頁 1293406Page 20 1293406
程而形成。 接著，如第8G圖，一黑矩陣372與一彩色率光片層374 一同形成於該上基板370上，其中該黑矩陣可以鉻/氧曰化鉻 (Cr/CrOx)或一黑樹脂製成。接著，接合該下基板36〇& 該上基板370。最後，將一液晶層380置於該上基板與 該下基板3 6 0間而完成一液晶顯示器。 ^ 如上述，本發明中製造液晶顯示器的方法為利用鈦與 氧化鈦的蝕刻率的圖案形成法。採用該圖案形成法使得& 造液晶顯示器的所有製成變為簡單，也同時降低了製造$ 本。本發明的圖案形成法亦可如第9AS9F圖所示，應用於_ 製作半導體裝置中。 第9A至9F圖係顯示本發明中利用圖案形成法製造一半 導體裝置之順序步驟示意圖。首先，如第9 A圖所示，一絕 緣層46 2a形成於一半導體基板46〇上，其中該半導體基板 可為一半導體晶圓。一半導體層454a形成於該絕緣層462a 上’其中該半導體層454a可為一多晶石夕（p〇iy 一 Silicon， P - Si )。一鈦層410形成於一絕緣層462a上。 接著，如第9B圖，將一光罩4〇 7置於該鈦層410上方， 再以一光線如紫外線或雷射照射該鈦層41 〇，該鈦層41 〇上_丨 照光之部分則氧化為氧化鈦而未照光的部分則無改變。如 第9C圖，提供一蝕刻液（如一酸類）或一蝕刻氣體（如氯 氣或含氯之混合氣體如CF4/Cl2/02)至該鈦層410，則該未 變化的鈥層410被移除而保留一氧化鈦圖案4i〇a於該多晶 矽的半導體層45 4a上。如第9D圖所示，該半導體層45 4a被Formed by Cheng. Next, as shown in FIG. 8G, a black matrix 372 is formed on the upper substrate 370 together with a color rate light sheet layer 374, wherein the black matrix can be made of chromium/oxygen chrome (Cr/CrOx) or a black resin. . Next, the lower substrate 36 is bonded to the upper substrate 370. Finally, a liquid crystal layer 380 is placed between the upper substrate and the lower substrate 360 to complete a liquid crystal display. As described above, the method of manufacturing a liquid crystal display in the present invention is a pattern forming method using an etching rate of titanium and titanium oxide. This patterning method makes it easy to make all the fabrications of the liquid crystal display, and at the same time reduce the manufacturing cost. The pattern forming method of the present invention can also be applied to a semiconductor device as shown in Fig. 9AS9F. Figs. 9A to 9F are views showing the sequential steps of manufacturing a half conductor device by the pattern forming method in the present invention. First, as shown in Fig. 9A, an insulating layer 46 2a is formed on a semiconductor substrate 46, wherein the semiconductor substrate can be a semiconductor wafer. A semiconductor layer 454a is formed on the insulating layer 462a' wherein the semiconductor layer 454a may be a polycrystalline silicon (P-Si). A titanium layer 410 is formed on an insulating layer 462a. Next, as shown in FIG. 9B, a photomask 4〇7 is placed over the titanium layer 410, and the titanium layer 41 is irradiated with a light such as ultraviolet light or laser, and the titanium layer 41 is 〇 The portion that was oxidized to titanium oxide and not illuminated was not changed. As shown in FIG. 9C, an etchant (such as an acid) or an etching gas (such as chlorine or a mixed gas containing chlorine such as CF4/Cl2/02) is supplied to the titanium layer 410, and the unaltered layer 410 is removed. The titanium oxide pattern 4i〇a is retained on the polysilicon semiconductor layer 45 4a. As shown in FIG. 9D, the semiconductor layer 45 4a is
第21頁 1293406 五、發明說明（17) 該氧化欽圖案410a所遮蓋’所以當提供一蝕刻液將移除該 絕緣層462a、該多晶矽的半導體層454a以及該氧化鈦圖形 41 0 ’而該閘絕緣層4 6 2與該閘極4 5 4則保留於該半導體美 板460上。如第9E圖所示，將離子植入被該閘=454遮蓋"的 該半導體基板460而形成一源極區456與一汲極區457於該 半導體基板460上，如第9F圖，於此完成一半導體裝置。 如上述，製程中可同時蝕刻或分開蝕刻該絕緣^f 462a 與該多晶矽的半導體層454a。若分開蝕刻，則該絕緣層 462a可於離子植入後蝕刻，如此一來，該絕緣層462a二作 為一緩衝層避免該半導體基板46〇受到離子植入的影響。 在製造該半導體裝置的方法中，照光至部分鈦層a上以 將其氧化為氧化鈦，再利用鈦與氧化鈦的蝕刻選擇率可形 成一圖案。另外亦可利用二氧化鈦的表面特性（疏水性盥 親水性）形成該圖案。本發明的圖案形成法適合應用於不 同裝置的不同圖案中如液晶顯示器或半導體裝置等，同 理’本發明的圖案形成法亦可應用於需要金屬$絕緣圖形 的任何電性裝置中。 本發明的的圖案形成法係使用一金屬（如鈦）與其氧 化物（如氧化鈦）以取代習知技藝中使用一光阻，^許 多優點：第-’該製造過程簡單，可省去光阻烘烤的二步 驟；第二，製造成本可因由圖案形成中分離出顯影線而降 低。本發明中的圖案形成法可使用與製造電性裝置相同的 没備，以形成一金屬層為例，該金屬層與該鈦層可使用同 -真空腔製作。因此，與習知技藝使用光阻相車交，其製造Page 21 1293406 V. Description of the Invention (17) The oxidized pattern 410a is covered 'so that when an etchant is provided, the insulating layer 462a, the polysilicon semiconductor layer 454a, and the titanium oxide pattern 41 0 ' are removed. The insulating layer 426 and the gate 454 remain on the semiconductor 460. As shown in FIG. 9E, the semiconductor substrate 460 is implanted by the gate 454 to form a source region 456 and a drain region 457 on the semiconductor substrate 460, as shown in FIG. This completes a semiconductor device. As described above, the insulating layer 462a and the polysilicon semiconductor layer 454a may be simultaneously etched or separately etched in the process. If separately etched, the insulating layer 462a can be etched after ion implantation. Thus, the insulating layer 462a serves as a buffer layer to prevent the semiconductor substrate 46 from being affected by ion implantation. In the method of fabricating the semiconductor device, a portion of the titanium layer a is irradiated to oxidize it to titanium oxide, and an etching selectivity of titanium and titanium oxide is used to form a pattern. Further, the pattern can be formed by utilizing the surface characteristics (hydrophobicity 亲水 hydrophilicity) of titanium dioxide. The pattern forming method of the present invention is suitably applied to different patterns of different devices such as liquid crystal displays or semiconductor devices, and the pattern forming method of the present invention can also be applied to any electrical device requiring a metal $insulating pattern. The patterning method of the present invention uses a metal (such as titanium) and its oxide (such as titanium oxide) to replace the use of a photoresist in the prior art. Many advantages: the first process is simple, and the light can be omitted. The second step of blocking baking; second, the manufacturing cost can be lowered by separating the developing line from the pattern formation. The pattern forming method in the present invention can be used in the same manner as in the fabrication of an electrical device to form a metal layer which can be fabricated using the same vacuum chamber. Therefore, it is used in the art of using photoresists with conventional techniques.
1293406 五、發明說明（18) 成本可大幅降低。 晶體時，其成本約 其比例遠低於使用 環境的污染問題可 光阻；最後，可避 積，鈦層是以蒸鍍 確控制而可避免圖 本發明可以許 同型態加以具體實 下的專利範圍，除 本發明之精神與範 落於或等同於以下 使用本發明的 為該薄膜電晶 光阻製作圖案 有效控制，因 免有瑕疵的電 或賤鍍等方至 案缺點的產生 多未脫離本發 施，是以上述 特別限定之項 疇中，是以， 專利範圍的界 圖案形成法製造一薄膜電 體總製造成本的15〜20%， 的40〜45% ;第三，該製成 為本發明並不會丢棄任何 性裝置。不同於光阻的沉 製作，所以其厚度可以精 〇 明之精神與基本原理之不 的實施例並非加以限制以 目外，其都應廣泛包含於Λ 所有的變更或修飾都應坐 定内。1293406 V. INSTRUCTIONS (18) Costs can be significantly reduced. In the case of crystals, the cost is about the same as that of the pollution problem in the environment. In the end, it can be avoided, and the titanium layer is controlled by evaporation, so that the invention can be avoided. The scope of patents, except for the spirit and scope of the present invention, is equivalent to or is equivalent to the following use of the present invention to effectively control the patterning of the thin film electro-optic photoresist, since the defects of the electric or ruthenium plating, etc., are not detached. The present invention is based on the above-mentioned specifically defined domain, which is a manufacturing process of the patent range of 15 to 20%, 40 to 45% of the total manufacturing cost of the thin film electric device; third, the The invention does not discard any sexual devices. Unlike the fabrication of photoresists, the thickness and thickness of the embodiments are not limited, and should be widely included. All changes or modifications should be settled.
12934061293406
為提供對本發明更進一步 本說明書之一部分，發明之具 發明之原理。 第1A至1F圖係習知技藝中 序示意圖。 之了解，故納入附加圖 體圖示與敘述一同為解釋本 以一光阻形成圖案之步驟順 第2A至2F圖係本發明中一 示意圖。 實施例之圖案形成步驟順序 第3A至3C圖係本發明中一實施例製作一實際圖形之放 大圖。 第4A至4F圖係本發明中另一實施例之圖案形成步驟順# 序示意圖。 第5圖係一紫外光照射時間與一接觸角之關係圖。 第6圖係一液晶顯示器之平面圖。 第7圖係第6圖中沿I — I，之剖視圖。In order to provide a further detail of the present invention, the invention is based on the principles of the invention. Figures 1A through 1F are schematic diagrams of conventional techniques. For the sake of understanding, the accompanying drawings and descriptions are included to explain the steps of forming a pattern by a photoresist, and the drawings are shown in Figs. 2A to 2F. Pattern forming step sequence of the embodiment Figs. 3A to 3C are enlarged views of an actual pattern produced by an embodiment of the present invention. 4A to 4F are schematic views showing the pattern forming step of another embodiment of the present invention. Figure 5 is a graph showing the relationship between the ultraviolet light irradiation time and a contact angle. Figure 6 is a plan view of a liquid crystal display. Figure 7 is a cross-sectional view taken along line I - I in Figure 6.
第8A至8G圖係顯示本發明中以圖案形成法製造〆浪晶 顯示器之步驟順序示意圖。 V 第9A至9F圖係顯示本發明中利用圖案形成法製造〆半 導體裝置之步驟順序示意圖。 ' 元件符號說明 1 基板 3 金屬層 3a金屬圖案 5 光阻層Figs. 8A to 8G are views showing a sequence of steps for fabricating a sinusoidal crystal display by a pattern forming method in the present invention. V Figures 9A to 9F are views showing a sequence of steps for fabricating a germanium semiconductor device by the pattern forming method in the present invention. ' Component Symbol Description 1 Substrate 3 Metal Layer 3a Metal Pattern 5 Photoresist Layer
1293406 圖式簡單說明 5a光阻圖案 7 光罩 101 基板 10 3 金屬層 103a金屬圖案 107 光罩 110 鈦層 110a 氧化鈦層（氧化鈦圖案） 110b鈦層 201 基板 203 金屬層 203a金屬圖案 207 光罩 210 二氧化鈦層 210a 第一二氧化鈦層 210b 第二二氧化鈦層 211 二氧化鈦層 a 曲線 b 曲線 c 曲線 3 0 5 鈦層 305a 氧化鈦圖案 307 光罩 308 光罩1293406 Schematic description 5a photoresist pattern 7 photomask 101 substrate 10 3 metal layer 103a metal pattern 107 photomask 110 titanium layer 110a titanium oxide layer (titanium oxide pattern) 110b titanium layer 201 substrate 203 metal layer 203a metal pattern 207 mask 210 Titanium dioxide layer 210a First titanium dioxide layer 210b Second titanium dioxide layer 211 Titanium dioxide layer a Curve b Curve c Curve 3 0 5 Titanium layer 305a Titanium oxide pattern 307 Photomask 308 Photomask
第25頁 1293406Page 25 1293406
圖式簡單說明 316 鈦層 350 面板 351 閘線 352 資料線 353 薄膜電晶體 354 閘極 354a 金屬層 355 半導體層 355a 半導體層 356 源極 357 汲極 359 畫素電極 360 下基板 362 閘絕緣層 364 鈍化層 365 接觸孔 370 上基板 372 黑矩陣 374 彩色濾光片層 380 液晶層 407 光罩 410 鈦層 410a 氧化鈦圖案 454 閘極 第26頁 1293406 圖式簡單說明 454a半導體層 4 5 6 源極區 4 5 7 >及極區 460 半導體基板 462 閘絕緣層 462a絕緣層 Ηϋ 第27頁 ΦBrief description of the drawing 316 Titanium layer 350 Panel 351 Gate line 352 Data line 353 Thin film transistor 354 Gate 354a Metal layer 355 Semiconductor layer 355a Semiconductor layer 356 Source 357 Bungee 359 Pixel electrode 360 Lower substrate 362 Gate insulating layer 364 Passivation Layer 365 Contact Hole 370 Upper Substrate 372 Black Matrix 374 Color Filter Layer 380 Liquid Crystal Layer 407 Photomask 410 Titanium Layer 410a Titanium Dioxide Pattern 454 Gate Page 26 1293406 Brief Description of the Drawing 454a Semiconductor Layer 4 5 6 Source Region 4 5 7 > and polar region 460 semiconductor substrate 462 gate insulating layer 462a insulating layer Ηϋ page 27 Φ
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| KR1020020073206A KR100978250B1 (en) | 2002-11-22 | 2002-11-22 | Metal pattern fabricating method and electric device fabricating method using thereof |
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| JP (1) | JP4468679B2 (en) |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI408730B (en) * | 2008-07-22 | 2013-09-11 | Macronix Int Co Ltd | Patterning method |
| US8748323B2 (en) | 2008-07-07 | 2014-06-10 | Macronix International Co., Ltd. | Patterning method |
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| KR100934810B1 (en) * | 2002-12-18 | 2009-12-31 | 엘지디스플레이 주식회사 | LCD and its manufacturing method |
| US7585424B2 (en) * | 2005-01-18 | 2009-09-08 | Hewlett-Packard Development Company, L.P. | Pattern reversal process for self aligned imprint lithography and device |
| US20060183342A1 (en) * | 2005-02-15 | 2006-08-17 | Eastman Kodak Company | Metal and metal oxide patterned device |
| US7601567B2 (en) * | 2005-12-13 | 2009-10-13 | Samsung Mobile Display Co., Ltd. | Method of preparing organic thin film transistor, organic thin film transistor, and organic light-emitting display device including the organic thin film transistor |
| US8563431B2 (en) * | 2006-08-25 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8796044B2 (en) * | 2012-09-27 | 2014-08-05 | International Business Machines Corporation | Ferroelectric random access memory with optimized hardmask |
| US8759220B1 (en) * | 2013-02-28 | 2014-06-24 | Shin-Etsu Chemical Co., Ltd. | Patterning process |
| US9799534B1 (en) | 2017-01-04 | 2017-10-24 | International Business Machines Corporation | Application of titanium-oxide as a patterning hardmask |
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| JPS5593225A (en) * | 1979-01-10 | 1980-07-15 | Hitachi Ltd | Forming method of minute pattern |
| JPS62104177A (en) * | 1985-10-31 | 1987-05-14 | Toshiba Corp | Manufacture of compound semiconductor element |
| US4842677A (en) * | 1988-02-05 | 1989-06-27 | General Electric Company | Excimer laser patterning of a novel resist using masked and maskless process steps |
| JPH0513409A (en) * | 1991-06-28 | 1993-01-22 | Sumitomo Electric Ind Ltd | Manufacture of semiconductor device |
| US6979840B1 (en) * | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
| JPH0745586A (en) * | 1993-08-02 | 1995-02-14 | Nippon Telegr & Teleph Corp <Ntt> | Patterned organic thin film |
| KR0175017B1 (en) * | 1995-10-23 | 1999-04-01 | 윤종용 | Etching method using alumina forming apparatus and alumina mask |
| DE69805723T2 (en) * | 1997-09-12 | 2003-01-02 | Fuji Photo Film Co Ltd | Planographic printing and printing plate precursor for planographic printing |
| KR100252889B1 (en) * | 1997-11-14 | 2000-04-15 | 김영환 | Pt etching process |
| JP4342075B2 (en) * | 2000-03-28 | 2009-10-14 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
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2002
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8748323B2 (en) | 2008-07-07 | 2014-06-10 | Macronix International Co., Ltd. | Patterning method |
| TWI408730B (en) * | 2008-07-22 | 2013-09-11 | Macronix Int Co Ltd | Patterning method |
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| KR100978250B1 (en) | 2010-08-26 |
| JP4468679B2 (en) | 2010-05-26 |
| JP2004311936A (en) | 2004-11-04 |
| US7196015B2 (en) | 2007-03-27 |
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