TWI291772B - Light-emitting device and method for fabricating same - Google Patents

Light-emitting device and method for fabricating same Download PDF

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Publication number
TWI291772B
TWI291772B TW094138477A TW94138477A TWI291772B TW I291772 B TWI291772 B TW I291772B TW 094138477 A TW094138477 A TW 094138477A TW 94138477 A TW94138477 A TW 94138477A TW I291772 B TWI291772 B TW I291772B
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Taiwan
Prior art keywords
light
transparent conductive
phosphor
layer
conductive film
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TW094138477A
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Chinese (zh)
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TW200625696A (en
Inventor
Kazuo Uchida
Shinji Nozaki
Hiroshi Morisaki
Yasuo Imamura
Shuichi Kato
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Nanoteco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

A light-emitting device performing wavelength conversion using a phosphor in which luminous efficiency is enhanced while reducing the size. The light-emitting device comprises a semiconductor active region emitting a first light, and a transparent conductive layer containing a phosphor which is excited with the first light and emits second light having a wavelength different from that of the first light.

Description

1291772 九、發咱說明·· 【發明所屬之技術領域】 本發明係關於發光元件，特別是關於使用螢光體進行波 長轉換之發光元件。 【先前技術】 發光二極體（LED)係最為廣泛使用之光源之一。作為光 源使用LED時成為問題點之一，係lEd原始上只能產生單 色光’且’其波長之調整並不容易。led所產生的波長， 以構成其之材料或構造決定，其調整並不容易。將LED應 用於照明器具時，需要產生各式各樣的顏色的光，特別是 白色光，惟LED，除非使用特殊技術，無法對應如此之需 求0 由LED得到具有所期望波長之一個方法，已知將螢光體 此入封I LED之鑄造樹脂。如此之技術，有揭示於例如， 特開平5-152609號公報，特開平7_99345號公報及特開平 10-242513號公報。藉由將LED所產生的光使用混入於鑄造1291772 IX. RELATED ART FIELD OF THE INVENTION The present invention relates to a light-emitting element, and more particularly to a light-emitting element that performs wavelength conversion using a phosphor. [Prior Art] A light-emitting diode (LED) is one of the most widely used light sources. When LEDs are used as a light source, it is one of the problems, and lEd originally only produces single-color light 'and' the adjustment of its wavelength is not easy. The wavelength produced by the led is determined by the material or structure that constitutes it, and the adjustment is not easy. When applying LEDs to lighting fixtures, it is necessary to produce a variety of colors of light, especially white light, but LEDs, unless using special techniques, cannot meet such a demand. 0 A method of obtaining a desired wavelength from an LED has been used. It is known that the phosphor is incorporated into the casting resin of the I LED. For example, Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. By mixing the light generated by the LED into the casting

樹脂之螢光體波長轉換，可得所期望波長之光。特開^ 10-2425 13號公報揭示，使用滲雜Ce2YAG(釔鋁石榴石μ 為螢光體。又，特開2002-363554號公報揭示，使用摻痒The phosphor wavelength conversion of the resin provides light of a desired wavelength. Japanese Patent Publication No. Hei 10-2425 No. 13 discloses the use of a turbid Ce2YAG (yttrium aluminum garnet μ as a phosphor. Further, JP-A-2002-363554 discloses the use of itching

Ce、Pr、Eu、Tb、Yb、Er之 5 小一括二主 > 瓷（Alpha SiAlON)作為螢光體 tr之主少一種兀素之心矽鋁氡氮汚 或 能 該技術，係成為產生短波長之光，具體而言，為藍色光 外光之LED之貫用化之基礎。螢光體，由於基本上只 發出較激發光長波長之光，故為得所期望波長之光，= 10587] .doc 1291772 別是白色光，使用會產生短波長光之LED為重要。 使用者#使用t光體進行波長轉換之發光源#之要求之 I，係其發光效率之提升。發光效率高，可聯繫到光源的 免度之提升，或消耗電力之減少。對發光元件之其他要求 之 係其大小之鈿小。n元件之小型化，可容易地將 發光元件構裝成最終產品。 、 【發明内容】 因此，本發明之目的在於提升使用螢光體進行波長轉換 之發光元件之發光效率。本發明之其他目的在於實現使用 螢光體進行波長轉換之發光元件之之小型化。 於本發明之一觀點，發光元件具備：半導體活性區域， 其係產生第1光者；及透明導電層，其包含由上述第丨光所 激發而產生具有與上述第i光相異波長之第2光之螢光體。 如此之發光元件之構造可將供給半導體活性區域驅動電流 之電極兼用作為支持螢光體之構造體。此可將螢光體與半 導體活性區域之間的距離縮小，有效提升螢光體之發光效 率此外’將供給半導體活性區域驅動電流之電極兼用作 為支持螢光體之構造體，對發光元件的小型化有效。 勞光體分散於母材之構造體使用作為透明導電層時，上 述母材包含由銦、鋅、錫、鎵、銻之至少一種以上所組成 之材料之氧化物為佳。 於一貫施形態，該發光元件具備接合於上述半導體活性 區域之半導體被覆層及接合於半導體被覆層之半導體接觸 層時’透明導電層可接合於半導體接觸層。如此之構造， 105871.doc 1291772 【實施方式】 (實施之第1形態） 圖1係表不本發明之實施之第[形態之發光元件^之構成 之剖面圖。發光元件10,具備：咖晶片ι;及導線2、 3 °於導線2的前端，設有收容LED晶片1之杯2a，LED晶片 ^吉合於杯〜之底面。咖晶片1與導線2,以金屬線4電性 接，LED晶片1與導線3以金屬、線5電性連接。LED晶片 1、導線2、3及金屬線4、5以鑄造樹脂6封裝。 圖2係表示LED晶月r構造之剖面圖，圖3係表示㈣晶 P之構造之平面圖。如圖2所示，LED晶片i，具備··藍 寶石基板 11、η-GaN層 12、n_A1Gai^ 13、MQ· 14、p_ AIGaN層15、p_GaN層μ、陰極電極17及陽極電極18。n_ GaN層12，係作為n型接觸層之作用之層，與陰極電極η 結合。卜八…⑽層13、MQW層14、p_A1Gais^ 15係分別作 為η型被覆層、由驅動電流產生光之活性區域及p型被覆層 之作用MQW層14，係以層疊inQaN層與GaN層之多重量 子井（multi-quantum well)形成。將被覆層及MQW*以氮化 物化合物半導體形成，在由MQW層發出短波長之光，特 別是，藍色或紫外光上重要。16，係作為p型接觸 層之作用之層，與陽極電極18結合。 陽極電極18，包含：金屬電極19，其係結合於金屬線 ’及透明導電層20，其係介設於金屬電極19與p-GaN層16 之間。透明導電層2〇與p_GaN層16，以歐姆結合。使用於 產生光之驅動電流，係由導線3及金屬線5供給金屬電極 10587 丨.doc -10- 1291772 19，之後，經由透明導電層20、p-GaN層16及p-AlGaN層 15注入MQW層14。 如圖3所示，相對於透明導電層20被覆p-GaN層16上面之 全體，金屬電極1 9只有部份被覆尸(}—層丨6之上面。此 係，為了邊提高發光元件1 〇之亮度，提高亮度的均勻性。 由於金屬電極19之光透過率低，若金屬電極19之面積大則 會招致發光元件10之亮度降低。但是，若金屬電極19之面 積小，則注入MQW層14之驅動電流可能會在面内不均。 透明導電層20，係使驅動電流向面内方向擴散，提升注入 M Q W層14之驅動電流之面内均勻性。 回到圖2，陽極電極1 8之透明導電層20，具備：含有螢 光體之螢光體含有透明導電膜21 ;及不含有螢光體之透明 導電膜22。使用螢光體含有透明導電膜21，係本實施形態 之發光元件10之一個特徵。螢光體含有透明導電膜21，作 為驅動電流之路徑的作用，並且達成使用螢光體進行波長 轉換之角色。當MQW層14所產生的光入射螢光體含有透 明導電膜21，則含於螢光體含有透明導電膜21之螢光體被 激發，而與原來的光相異波長之光由螢光體發出。 發光元件10所發出之光之顏色，依存於MQW層14所產 生的光之波長，及構成螢光體之材料。將發光元件丨〇使用 於產生白色光時，使MQW層14產生藍色光的方式形成， 且’作為螢光體適合使用含有飾（Ce)之YA G (紀銘石權石） 或含有銪（Ειι)之α型矽鋁氧氮陶瓷。 作為螢光體含有透明導電膜21之母材（即，螢光體含有 105871.doc 1291772 7導電㈣μ光體料之部分），使用—般作為透明 極使用之材料’具體而言’由包含銦、鋅、錫、鎵、銻 首（1重以上之材料之氧化物。例如，螢光體含有透明 +電膜2 1之母材，得以y· 柯係以1T〇(Ind〗um Tin Oxide :銦錫氧化 物）、Zn〇或Sn〇2形成而得。 與螢光體含有透明導電膜21之母材同樣地，透明導電膜 22,係由-般作為透明電極使用之材料，具體而言，由包 3銦、鋅、錫、鎵、銻之至少一種以上之材料之氧化物形 成0 以下，詳細說明螢光體含有透明導電膜21及不含有螢光 體之透明導電膜22之有用性。於陽極電極18組入螢光體含 有透明導電膜21之構造之第1好處是，可提高發光元件10 之土光效率。於陽極電極18組入螢光體含有透明導電膜h 之構造，可使MQW層14至螢光體之距離變小。此可有效 地提高發光元件10之發光效率。 | 第2好處是，可實現發光元件1()之小型化。於陽極電極 18組入螢光體含有透明導電膜212LED晶片〗，由於藉由 ' 螢光體進订波長轉換故無需於發光元件10設置專用之構造 , 體。此對發光元件10之小型化有效。 含於發光體含有透明導電膜21之螢光體分量越大，發光 元件10之發光效率越大。但是，增大螢光體分量’有招致 增大螢光體含有透明導電膜21之電阻率之問題。圖4表示 含有YAGk光體之ITO電極之電阻率，依含於ιτ〇之螢光體 分里（wt/〇)之影響之圖表。當YAG螢光體的分量超過 105871.doc -12- 1291772 t /〇則1T〇电極的電阻率顯著地增大。螢光體含有透 月導兔膜2 1之電阻率增大，減弱透明導電層2〇將驅動電流 向面内方向擴散之作用，招致驅動電流之面内均勻性降 低。 •不3有螢光體之透明導電膜22，達成抑制起因於螢光體 ^有透明導電助之電阻率增大使驅動電流之面内均勾性 、牛低之角色不5有螢光體，因此，可使其電阻低的透明 導電膜22，可使焉區動電流相面内方向充分擴散，有效提升 ㈣電流之面内均㈣。於圖2，雖透明導電膜22設於發 光體含有透明導電膜21與卜細層16之間，請留意營光體 含有透明導電膜21與透明導電膜22之位置可交換。此外， 亦請留意當電阻率充分低時，可不設透明導電膜^。 圖5A〜圖5C係表示實施之第i形態之led 製造方法之剖面圖。首先，如岡u抓— 良好的 f无如圖5A所不，於藍寶石基板11 上’依序形成卜㈣層12、η·ΑΚ5_ 13、MQw 14Ce, Pr, Eu, Tb, Yb, Er 5 small ones and two mains> porcelain (Alpha SiAlON) as the main body of the fluorescent body tr, a kind of nucleus, alum, aluminum, nitrogen, or the like, can be produced The short-wavelength light, in particular, is the basis for the use of blue-light external light LEDs. In the case of a phosphor, since light of a longer wavelength than that of the excitation light is emitted substantially, light of a desired wavelength is obtained. = 10587] .doc 1291772 It is white light, and it is important to use an LED which generates short-wavelength light. The requirement of the user ## using the t-light source for wavelength conversion of the illuminating source # is the improvement of the luminous efficiency. High luminous efficiency, which can be linked to the improvement of the light source or the reduction of power consumption. Other requirements for the illuminating element are small in size. The miniaturization of the n element makes it easy to construct the light emitting element into a final product. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve the luminous efficiency of a light-emitting element that performs wavelength conversion using a phosphor. Another object of the present invention is to achieve miniaturization of a light-emitting element that performs wavelength conversion using a phosphor. In one aspect of the invention, a light-emitting element includes: a semiconductor active region that generates a first light; and a transparent conductive layer that includes a second wavelength different from the ith light excited by the second light 2 light phosphor. The structure of such a light-emitting element can also serve as a structure for supporting a phosphor by using an electrode for supplying a current in a semiconductor active region. This can reduce the distance between the phosphor and the active region of the semiconductor, and effectively increase the luminous efficiency of the phosphor. In addition, the electrode for supplying the current in the semiconductor active region serves as a structure for supporting the phosphor, and is small for the light-emitting element. Effective. When the structure in which the work member is dispersed in the base material is used as the transparent conductive layer, the base material preferably contains an oxide of a material composed of at least one of indium, zinc, tin, gallium, and antimony. In a conventional embodiment, when the light-emitting element includes a semiconductor coating layer bonded to the semiconductor active region and a semiconductor contact layer bonded to the semiconductor coating layer, the transparent conductive layer can be bonded to the semiconductor contact layer. [Structure] 105871.doc 1291772 [Embodiment] (First embodiment of the invention) Fig. 1 is a cross-sectional view showing the configuration of a light-emitting device of the first embodiment of the present invention. The light-emitting element 10 includes a coffee pad 1 and wires 2 and 3 at the tip end of the lead wire 2, and a cup 2a for accommodating the LED chip 1 is provided, and the LED chip is attached to the bottom surface of the cup. The wafer 1 and the wire 2 are electrically connected by a metal wire 4, and the LED chip 1 and the wire 3 are electrically connected by a metal or a wire 5. The LED wafer 1, the wires 2, 3, and the metal wires 4, 5 are encapsulated in a cast resin 6. Fig. 2 is a cross-sectional view showing the structure of the LED crystal, and Fig. 3 is a plan view showing the structure of the (four) crystal P. As shown in Fig. 2, the LED chip i includes a sapphire substrate 11, an n-GaN layer 12, n_A1Gai^13, MQ14, a p_AIGaN layer 15, a p_GaN layer μ, a cathode electrode 17, and an anode electrode 18. The n-GaN layer 12 is a layer functioning as an n-type contact layer and is bonded to the cathode electrode η. (8) layer 13, (10) layer 13, MQW layer 14, and p_A1Gais^ 15 are respectively used as an n-type cladding layer, an active region for generating light by a driving current, and a function of a p-type cladding layer, MQW layer 14, for laminating the inQaN layer and the GaN layer. Multiple quantum wells are formed. The coating layer and the MQW* are formed of a nitride compound semiconductor, and it is important to emit light of a short wavelength from the MQW layer, in particular, blue or ultraviolet light. 16, which is a layer functioning as a p-type contact layer, is bonded to the anode electrode 18. The anode electrode 18 includes a metal electrode 19 bonded to the metal line 'and the transparent conductive layer 20 interposed between the metal electrode 19 and the p-GaN layer 16. The transparent conductive layer 2 is bonded to the p_GaN layer 16 in ohms. The driving current for generating light is supplied from the wire 3 and the metal wire 5 to the metal electrode 10587 丨.doc -10- 1291772 19, after which the MQW is injected through the transparent conductive layer 20, the p-GaN layer 16, and the p-AlGaN layer 15. Layer 14. As shown in FIG. 3, the entire surface of the p-GaN layer 16 is covered with respect to the transparent conductive layer 20, and the metal electrode 19 is only partially covered on the top surface of the corpse (the layer 丨6). This is to improve the light-emitting element 1 〇 The brightness of the metal electrode 19 is low, and if the area of the metal electrode 19 is large, the brightness of the light-emitting element 10 is lowered. However, if the area of the metal electrode 19 is small, the MQW layer is injected. The driving current of 14 may be uneven in the plane. The transparent conductive layer 20 diffuses the driving current in the in-plane direction and enhances the in-plane uniformity of the driving current injected into the MQW layer 14. Returning to Fig. 2, the anode electrode 18 The transparent conductive layer 20 includes a phosphor-containing phosphor comprising a transparent conductive film 21 and a transparent conductive film 22 not containing a phosphor. The use of the phosphor-containing transparent conductive film 21 is the illumination of the embodiment. A feature of the element 10. The phosphor contains a transparent conductive film 21 as a path for driving current, and achieves the role of wavelength conversion using a phosphor. When the light incident on the MQW layer 14 is transparent, the phosphor is transparent. In the electric film 21, the phosphor contained in the phosphor containing the transparent conductive film 21 is excited, and the light of the wavelength different from the original light is emitted from the phosphor. The color of the light emitted from the light-emitting element 10 depends on The wavelength of light generated by the MQW layer 14 and the material constituting the phosphor. When the light-emitting element is used to generate white light, the MQW layer 14 is formed to generate blue light, and 'the phosphor is suitably used. YA G (Ji Ming Shi Quan Shi) decorated with (Ce) or α-type yttrium aluminum oxynitride ceramic containing 铕 (Ειι). The base material containing the transparent conductive film 21 as a phosphor (ie, the phosphor contains 105871.doc 1291772) 7 conductive (four) μ light material part), the material used as a transparent pole 'specifically' consists of indium, zinc, tin, gallium, dagger (one or more materials of oxides. For example, fluorescent The body contains a base material of transparent + electric film 2 1 , which is obtained by forming 1T 〇 (Ind um Tin Oxide: Indium Tin Oxide), Zn 〇 or Sn 〇 2 with y· 柯. The base material of the film 21 is similarly, and the transparent conductive film 22 is made of a transparent electrode. Specifically, the material is formed of an oxide of at least one of the materials of at least one of indium, zinc, tin, gallium, and antimony, and is described below. The phosphor includes a transparent conductive film 21 and a transparent film containing no phosphor. The usefulness of the conductive film 22. The first advantage of the structure in which the phosphor electrode contains the transparent conductive film 21 in the anode electrode 18 is that the earth light efficiency of the light-emitting element 10 can be improved. The phosphor is contained in the anode electrode 18 and is transparent. The structure of the conductive film h can reduce the distance between the MQW layer 14 and the phosphor. This can effectively improve the light-emitting efficiency of the light-emitting element 10. The second advantage is that the light-emitting element 1 can be miniaturized. In the anode electrode 18, the phosphor-containing transparent conductive film 212 LED wafer is incorporated, and since the phosphor-substance-defined wavelength conversion, it is not necessary to provide a dedicated structure for the light-emitting element 10. This is effective for miniaturization of the light-emitting element 10. The larger the amount of the phosphor contained in the illuminant containing the transparent conductive film 21, the greater the luminous efficiency of the luminescent element 10. However, increasing the phosphor component' has a problem of increasing the resistivity of the phosphor containing the transparent conductive film 21. Fig. 4 is a graph showing the resistivity of an ITO electrode containing a YAGk light body, depending on the influence of the phosphor fraction (wt/〇) contained in the ITO. When the YAG phosphor component exceeds 105871.doc -12 - 1291772 t / 〇, the resistivity of the 1T 〇 electrode increases remarkably. The phosphor has a resistivity which increases the resistivity of the rabbit membrane 21, and weakens the transparent conductive layer 2 to diffuse the driving current into the in-plane direction, resulting in a reduction in the in-plane uniformity of the driving current. • The transparent conductive film 22 of the phosphor is not provided, and the suppression is caused by the increase in the resistivity of the fluorescent material, and the in-plane property of the driving current is not the same as that of the fluorescent body. Therefore, the transparent conductive film 22 having a low electric resistance can sufficiently diffuse the in-plane direction of the dynamic current in the crotch region, and effectively enhance (4) the in-plane of the current (4). In Fig. 2, although the transparent conductive film 22 is provided between the transparent conductive film 21 and the fine layer 16 in the light-emitting body, it is noted that the position of the transparent conductive film 21 and the transparent conductive film 22 can be exchanged. In addition, please also note that when the resistivity is sufficiently low, the transparent conductive film ^ may not be provided. 5A to 5C are cross-sectional views showing a method of manufacturing the LED of the first embodiment. First of all, if the good f is not good, as shown in Fig. 5A, the sapphire substrate 11 is sequentially formed into a layer (four) 12, η·ΑΚ5_13, MQw 14

AlGaN層 15及 p-GaN層 16。 、接耆如圖5B所不’依序形成透明導電膜22及螢光體含 透明導電膜21。透明導電膜2 2!，最簡便的一法形成體3有透明導電膜 但是’根據發明者之研究，機鑛法並不適用 導電膜21添加多分量的營光體。為增大含於勞： 含有透明導電膜21之榮光體分量適合使用溶膠-凝^ 具體而言，將混合螢光體之母 多/ 道+ 材之刖驅體溶液塗佈於锈昍 侧22上，藉由烘烤該溶液形成 暮 巧逍明導電膜 105871.doc 1291772 2 1為宜。 例如，母材為汀〇之螢光體含有透明導電膜21，可由下 述工序形成而得。首先，調製含IT〇之溶液(ιτ〇溶膠）。 ΙΤΟ溶膠，例如使用含有5% ΙΤ〇之醋酸酯。接著，於汀〇 冷膠混合螢光體粉末。對混合螢光體之ΙΤ0溶膠施以超音 波撥拌使螢光體均勻地分散於1丁〇溶膠。接著，於透明 導電膜22上以旋轉塗佈塗佈ΙΤ〇溶膠。接著，以12〇。〇，加 熱30分鐘乾燥塗佈之ΙΤ〇溶膠後，以55〇它，烘烤〗小時， 形成螢光體含有透明導電膜21。根據如此之方法，可充分 第將大量的螢光體含於螢光體含有透明導電膜21。 形成螢光體含有透明導電膜21後，如圖5C所示，圖案化 η-八1(^層 13、MQ^ 14、p_A1Ga_ i5、p_GaN層 μ、 透明導電膜22及螢光體含有透明導電膜21，露出層 12之-部份。再者，於卜⑽層^之露出部份，形成陰極 電極17，於螢光體含有透明導電膜21之上面形成金屬電極 19 ’完成圖2之LED晶片1。 如以上所說明，於本實施形態之發光元件1〇，有螢光體 含有透明導電膜21組入於供給驅動電流之電極（於本實施 形態係陽極電極18)，藉此，可提高發光元件1〇之發光效 率及實現發光元件1 〇之小型化。 此外，於本實施形態之發光元件10，有不含有螢光體之 透明導電膜22結合於含有之螢光體透明導電膜21，藉此可 麵:升驅動電流之面内均勻性。 (實施之第2形態） 105871 .doc -14- 1291772 圖示於圖2之LED晶片1之構造，係所謂稱為面朝上構造 者。但是，為提高發光元件之光取出效率，已知由基板側 出光之面朝下構造為宜。面朝下構造，於實施之第2形 您’提供採用搭載面朝下構造之led晶片之發光元件。 • 圖6係實施之第2形態之發光元件10A之構成之剖面圖。 〜 於貫施之第2形態，代替採用面朝上構造之LED晶片i，用 採用面朝下構造之LED晶片1A。隨此，LED晶片ία，覆晶 φ 片連接於導線2，於LED晶片1A與導線2之間的電性連接不 使用金屬線。 圖7係表示實施之第2形態之LED晶片1A之構造之剖面 圖。LED晶片1A，具備·· n_Sic基板11A、^〇心層12、卜 八1〇心層13、Mq· 14、卜八心闕15、卜〇心層16、陽 極電極17A。陽極電極17A係以金屬膜形成。於發光元件 1A構裝LED晶片1A時，陽極電極17A以覆晶片連接於導線 2 ° 馨明邊心、n-SiC基板11A為導電性，且透明。由於n_siC基 板11A具有導電性，可使用n-SiC基板11A作為供給MQW層 ' 14驅動電流之路徑。又，由於n-SiC基板11A未透明， ' Q層14所產生之光可透過其内部，不會妨礙LED晶片 A之光射出。由此討論可知，可代替n-SiC基板11A使用有 ‘電性，且透明之基板。例如，使“卩貿層14產生藍色光 的方式構成時，可使用高濃度滲雜η型雜質之GaN基板， GaN基板對藍色光透明。 為只現面朝下構造，於本實施形態，陰極電極丨8 A形成 105871.doc 1291772 於n-SiC基板11A之背面（即，與設有撾卩貿層14之側相反側 之面）。隨此’於本實施形態，包含螢光體含有透明導電 膜21及透明導電膜22之透明導電層2〇，組入設於n_sic基 板11A之背面之陰極電極18A。於透明導電層2〇上，形成 有金屬電極19A。如圖8所示，相對於透明導電層2〇被覆&The AlGaN layer 15 and the p-GaN layer 16 are used. Then, the transparent conductive film 22 and the phosphor-containing transparent conductive film 21 are sequentially formed as shown in Fig. 5B. The transparent conductive film 2 2!, the simplest one-form forming body 3 has a transparent conductive film. However, according to the research of the inventors, the organic mining method does not apply to the camping body in which the conductive film 21 is added with a plurality of components. In order to increase the content of the glory containing the transparent conductive film 21, it is suitable to use the sol-condensation. Specifically, the mother's multi-channel + material of the mixed phosphor is applied to the rust side 22 Preferably, by baking the solution, a conductive film 105871.doc 1291772 2 1 is preferably formed. For example, the phosphor of the base material is a transparent conductive film 21, which can be formed by the following steps. First, a solution containing IT ( (ιτ〇 sol) was prepared. For the cerium sol, for example, an acetate containing 5% hydrazine is used. Next, the phosphor powder was mixed with a cold gel. The sol of the mixed phosphor was ultrasonically dispersed to uniformly disperse the phosphor in the dibutyl sol. Next, the ruthenium sol was applied by spin coating on the transparent conductive film 22. Then, take 12〇. Thereafter, after drying and coating the ruthenium sol for 30 minutes, it was baked at 55 Torr for a period of time to form a phosphor-containing transparent conductive film 21. According to such a method, a large amount of the phosphor can be sufficiently contained in the phosphor-containing transparent conductive film 21. After the phosphor is formed to include the transparent conductive film 21, as shown in FIG. 5C, the patterned η-八1 (^ layer 13, MQ 14, 14, p_A1Ga_i5, p_GaN layer μ, transparent conductive film 22, and phosphor contain transparent conductive The film 21 exposes a portion of the layer 12. Further, the exposed portion of the layer (10) is formed with a cathode electrode 17, and a metal electrode 19 is formed on the phosphor-containing transparent conductive film 21 to complete the LED of FIG. Wafer 1. As described above, in the light-emitting element 1A of the present embodiment, the phosphor-containing transparent conductive film 21 is incorporated in an electrode for supplying a driving current (the anode electrode 18 in the present embodiment). The light-emitting element 1 is improved in light-emitting efficiency and the size of the light-emitting element 1 is reduced. Further, in the light-emitting element 10 of the present embodiment, the transparent conductive film 22 containing no phosphor is bonded to the fluorescent transparent conductive film containing the same. 21, in this way, the in-plane uniformity of the driving current is increased. (Second aspect of the implementation) 105871 .doc -14- 1291772 The structure of the LED wafer 1 shown in Fig. 2 is called a face-up structure. However, in order to improve the light extraction efficiency of the light-emitting element, Preferably, the surface-emitting structure from which the light is emitted from the substrate side is downward, and the second shape is used to provide a light-emitting element using a led wafer having a face-down structure. Fig. 6 is a second embodiment of the light-emitting device. A cross-sectional view of the configuration of the element 10A. In the second embodiment, the LED chip 1A having the face-down configuration is used instead of the LED chip i having the face-up structure. Accordingly, the LED chip ία, the flip chip φ piece Fig. 7 is a cross-sectional view showing the structure of the LED chip 1A according to the second embodiment of the present invention. The LED chip 1A is provided with ································· The substrate 11A, the core layer 12, the Ba 〇1 core layer 13, the Mq·14, the Bu 阙 阙 15, the 〇 〇 layer 16, and the anode electrode 17A. The anode electrode 17A is formed of a metal film. When the LED wafer 1A is mounted, the anode electrode 17A is connected to the conductor 2 ° Xinming center and the n-SiC substrate 11A is electrically conductive and transparent. Since the n_siC substrate 11A has conductivity, the n-SiC substrate 11A can be used. As a path for supplying the MQW layer '14 drive current. Also, due to the n-SiC substrate 11A It is opaque, and the light generated by the Q layer 14 can pass through the inside without hindering the light emission of the LED chip A. From this discussion, it can be seen that an 'electrical and transparent substrate can be used instead of the n-SiC substrate 11A. When the "trade layer 14" is configured to generate blue light, a GaN substrate having a high concentration of n-type impurities can be used, and the GaN substrate is transparent to blue light. In the present embodiment, the cathode electrode is in the present embodiment.丨8 A is formed in 105871.doc 1291772 on the back side of the n-SiC substrate 11A (i.e., the side opposite to the side on which the Kosaka trade layer 14 is disposed). In the present embodiment, the transparent conductive layer 2B including the transparent conductive film 21 and the transparent conductive film 22 in the phosphor is incorporated, and the cathode electrode 18A provided on the back surface of the n-sic substrate 11A is incorporated. On the transparent conductive layer 2, a metal electrode 19A is formed. As shown in FIG. 8, it is coated with respect to the transparent conductive layer 2 &

SiC基板11A之背面全體，金屬電極19只有被覆n_sic基板 11A之身面之-部分。此之有效性，如於實施之第^形態所 δ寸响者。為產生光驅動電流由陽極電極丨7 A注入MQW層 14進歩經由n_SlC基板11A及透明導電層2〇流至金屬電 極19 〇 如此之構造，同時享受實施之第丨實施形態之發光元件 1 〇之‘點（即，藉由使用螢光體含有透明導電膜21提升發 光元件10之發光效率與小型化），可實現面朝下構造。 如已敘述，圖6之構造，係利用n_Sic基板11A為導電 丨生’且透明。但是’由實用上的理由，有時使用透明，且 絕緣性的基板，例如使用藍寶石基板較佳之情形。 圖9係表不為滿足如此之要求之LED晶片1B之構造。圖9 所示LED晶片1B，係代#n-Sic基板11A，使用藍寶石基板 |1B明邊思監寶石基板〗1B，係透明，且絕緣型。透明導 電b 〇以被復監寶石基板11B的背面的方式形成，金屬 電極19與該透明導電層2〇結合。 +於圖9之LED晶片1B，陰極電極18A與n-GaN層12之間的 電性連接係藉由透明導電層2G直接結合卜㈣層12達成。 為產生光驅動電流由陽極電極17A注入MQw層〗4，進一歩 I05871.doc -16- 1291772 經由n-GaN層12及透明導電層20流至金屬電極19。即，藍 寶石基板11B，由驅動電流所流動之路徑排除。如此之構 造’即使藍寶石基板11B為絕緣性仍可採用面朝下構迭。 【圖式簡單說明】 圖1係表示本發明之實施之第1形態之發光元件之構成之 剖面圖。 圖2係表示實施之第1形態之LED晶片之構造之剖面圖。 圖3係表示實施之第1形態之LED晶片之構造之上面圖。 圖4係表示含有YAG螢光體之ITO電極之電阻率，依yaq 螢光體之分量之變化之圖表。 圖5 A係表示實施之第}形態之led晶片之製造方法之剖 面圖。 圖5B係表示實施之第！形態之LeD晶片之製造方法之剖 面圖。 圖5C係表示實施之第1形態之LED晶片之製造方法之剖 面圖。 圖6係表示本發明之實施之第2形態之發光元件之構成之 剖面圖。 圖7係表示實施之第2形態之LED晶片之構造之剖面圖。 圖8係表示實施之第2形態之LED晶片之構造之剖面圖。 圖9係表示實施之第2形態之LED晶片之其他構造之剖面 圖。 【主要元件符號說明】 1 ' 1A、IB LED晶片 105871.doc 1291772On the entire back surface of the SiC substrate 11A, the metal electrode 19 has only a portion covering the body surface of the n_sic substrate 11A. The validity of this, as in the implementation of the ^ form of the δ inch. In order to generate a light driving current, the anode electrode 丨7 A is injected into the MQW layer 14 and turbulently flows through the n_S1C substrate 11A and the transparent conductive layer 2 to the metal electrode 19, and the light-emitting element 1 of the third embodiment is implemented. The dot (i.e., by using the phosphor containing the transparent conductive film 21 to enhance the light-emitting efficiency and miniaturization of the light-emitting element 10), the face-down configuration can be realized. As already described, the configuration of Fig. 6 utilizes the n_Sic substrate 11A to be electrically conductive and transparent. However, for practical reasons, it is preferable to use a transparent and insulating substrate, for example, a sapphire substrate. Fig. 9 is a view showing the configuration of the LED wafer 1B which does not satisfy such a requirement. The LED chip 1B shown in Fig. 9 is a #n-Sic substrate 11A, and a sapphire substrate|1B is used as a transparent and insulating type. The transparent conductive material b is formed so as to be backed by the back surface of the gemstone substrate 11B, and the metal electrode 19 is bonded to the transparent conductive layer 2''. + In the LED wafer 1B of Fig. 9, the electrical connection between the cathode electrode 18A and the n-GaN layer 12 is achieved by directly bonding the transparent layer 2G to the layer (12). In order to generate a light driving current, the MQw layer 4 is injected from the anode electrode 17A, and further, I05871.doc -16 - 1291772 flows to the metal electrode 19 via the n-GaN layer 12 and the transparent conductive layer 20. That is, the sapphire substrate 11B is excluded by the path through which the drive current flows. Such a configuration 'even if the sapphire substrate 11B is insulative, it can be folded face down. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the configuration of a light-emitting element according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view showing the structure of the LED wafer of the first embodiment. Fig. 3 is a top view showing the structure of the LED wafer of the first embodiment. Figure 4 is a graph showing the resistivity of an ITO electrode containing a YAG phosphor, as a function of the amount of the yaq phosphor. Fig. 5A is a cross-sectional view showing a method of manufacturing a led wafer of the first embodiment. Figure 5B shows the implementation! A cross-sectional view showing a method of manufacturing a form of LeD wafer. Fig. 5C is a cross-sectional view showing a method of manufacturing the LED wafer of the first embodiment. Fig. 6 is a cross-sectional view showing the configuration of a light-emitting element of a second embodiment of the present invention. Fig. 7 is a cross-sectional view showing the structure of an LED chip of a second embodiment. Fig. 8 is a cross-sectional view showing the structure of an LED chip of a second embodiment. Fig. 9 is a cross-sectional view showing another structure of the LED chip of the second embodiment. [Main component symbol description] 1 '1A, IB LED chip 105871.doc 1291772

2、3 導線 2a 杯 4、f 金屬線 6 鑄造樹脂 10、 10A 發光元件 1卜 11B 藍寶石基板 11A n-SiC基板 12 n-GaN 層 13 n-AlGaN 層 14 MQW層 15 p-AlGaN 層 16 p-GaN 層 17 陰極電極 17A 陽極電極 18 陽極電極 18A 陰極電極 19、 19A 金屬電極 20 透明導電層 21 螢光體含有透明導電膜 22 透明導電膜 105871.doc -18-2, 3 wire 2a cup 4, f metal wire 6 casting resin 10, 10A light-emitting element 1 11B sapphire substrate 11A n-SiC substrate 12 n-GaN layer 13 n-AlGaN layer 14 MQW layer 15 p-AlGaN layer 16 p- GaN layer 17 cathode electrode 17A anode electrode 18 anode electrode 18A cathode electrode 19, 19A metal electrode 20 transparent conductive layer 21 phosphor containing transparent conductive film 22 transparent conductive film 105871.doc -18-

Claims (1)

5 5 丨％年7月β日修(更)正本 129 If 7¾138477號專利申請案 中文申請專利範圍替換本(96年7月） 十、申請專利範圍： 1 · 一種發光元件，其具備·· 半導體活性區域，其係產生第1光者；及 透明導電層，其包含由上述第i光所激發而產生具有 與上述第1光相異波長之第2光之螢光體；且 上述透明導電層包含： 第1透明導電膜，其包含上述螢光體；及5 5 丨 年 7 7 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 129 An active region that generates a first light; and a transparent conductive layer that includes a phosphor that is excited by the ith light to generate a second light having a wavelength different from the first light; and the transparent conductive layer The method includes: a first transparent conductive film comprising the above phosphor; 第2透明導電膜，其接合於上述第丨透明導電膜，且不 含上述螢光體。 2·如請求項1之發光元件，其中 上述透明導電層包含分散有上述螢光體之母材； 上述母材包含由銦、辞、錫、鎵 '銻之至少一種以上 所組成之材料之氧化物。 3·如請求項1之發光元件，其中 上述透明導電層係作為供給上述半導體活性區域驅動 電流之電極所使用。 4·如請求項1之發光元件，其中進一歩具備： 半導體被覆層，其係接合於上述半導體活性區域；及 半導體接觸層，其係接合於半導體被覆層； 上述透明導電層接合於上述半導體接觸層。 5·如請求項1之發光元件，其中進一步具備： 透明導電性基板，其係支持上述半導體活性區域者； 上述透明導電層以被覆對於上述透明導電性基板之上 述半導體活性區域位於相反側之面的方式形成。 105871-960727.doc 1291772 6·如請求項1之發光元件，其中 上述螢光體包含··含有鈽之YAG(釔鋁石榴石）。 7·如請求項1之發光元件，其中 上述螢光體包含··含有銪之α型矽鋁氧氮陶瓷。 8·如請求項6或7之發光元件，其中 上述半導體活性區域以氮化物化合物半導體形成。 9· 一種發光元件之製造方法，其具備： 形成用以產生第1光之半導體活性區域之步驟；及 形成包含由上述第1光產生具有與上述第丨光相異波長 之第2光之螢光體之透明導電層之步驟，且 上述透明導電層包含： 第1透明導電膜，其包含上述螢光體；及 第2透明導電膜，其接合於上述第1透明導電膜，且不 含上述螢光體； 形成上述透明導電層之步驟包含： 塗佈混合有上述螢光體之透明導電體之前驅體之溶液 之步驟；及 燒結已塗佈之上述溶液之步驟。 105871-960727.docThe second transparent conductive film is bonded to the second transparent conductive film and does not include the phosphor. 2. The light-emitting device of claim 1, wherein the transparent conductive layer comprises a base material in which the phosphor is dispersed; and the base material comprises oxidation of a material composed of at least one of indium, bismuth, tin, and gallium. Things. 3. The light-emitting element of claim 1, wherein the transparent conductive layer is used as an electrode for supplying a current to drive the semiconductor active region. 4. The light-emitting element of claim 1, wherein the semiconductor device further comprises: a semiconductor coating layer bonded to the semiconductor active region; and a semiconductor contact layer bonded to the semiconductor coating layer; wherein the transparent conductive layer is bonded to the semiconductor contact Floor. The light-emitting element of claim 1, further comprising: a transparent conductive substrate supporting the semiconductor active region; wherein the transparent conductive layer is coated on the opposite side of the semiconductor active region of the transparent conductive substrate The way to form. The light-emitting element of claim 1, wherein the phosphor comprises YAG (yttrium aluminum garnet) containing ruthenium. 7. The light-emitting element according to claim 1, wherein the phosphor comprises an ?-type lanthanum oxynitride ceramic containing ytterbium. The light-emitting element of claim 6 or 7, wherein the semiconductor active region is formed of a nitride compound semiconductor. 9. A method of producing a light-emitting device, comprising: forming a semiconductor active region for generating a first light; and forming a fluorescent light including a second light having a wavelength different from the first light by the first light a transparent conductive layer of the light body, wherein the transparent conductive layer comprises: a first transparent conductive film comprising the fluorescent material; and a second transparent conductive film bonded to the first transparent conductive film and not containing the above a phosphor; the step of forming the transparent conductive layer comprises: a step of coating a solution of a precursor of a transparent conductor in which the phosphor is mixed; and a step of sintering the coated solution. 105871-960727.doc
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