TWI291602B - Photolithographic rinse solution and resist-pattern forming method - Google Patents
Photolithographic rinse solution and resist-pattern forming method Download PDFInfo
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- TWI291602B TWI291602B TW094129759A TW94129759A TWI291602B TW I291602 B TWI291602 B TW I291602B TW 094129759 A TW094129759 A TW 094129759A TW 94129759 A TW94129759 A TW 94129759A TW I291602 B TWI291602 B TW I291602B
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- rinse solution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
1291602 (1) 九、發明說明 【發明所屬之技術領域】 本發明係有關一種微影用漂洗液，其係於將成像曝光 後之光阻進行顯像處理後，藉由接觸該漂洗液，而可維持 光阻表面對於顯像液或水之表面下均一性，可使接觸角降 低，並可抑制微泡之發生，再者，其即使對於例如3 0 0 mm左右之大型晶圓亦可以均質地進行塗布，其結果，可 有效地減少漂洗處理後之缺陷，或提升對於電子射線之抗 性，或抑制因電子線照射所產生之光阻圖型收縮·，本發明 並係有關於一種光阻圖型之形成方法。 【先前技術】 近年，隨著半導體設備的小型化、整合化，此微細加 工用光源之主流亦由傳統的紫外線，改成可形成更高解析 度之光阻圖型之g線（436 nm)，再由g線改成短波長的 i線（ 3 65 nm)，由i線改成KrF準分子雷射線（248 nm )，現在再繼續改成ArF準分子雷射線（193 nm )， F2準分子雷射線（157 nm)，甚至EB及EUV等電子射 線，同時，關於這些短波長光源所適合之步驟及光阻材 料，亦快速地在進行開發中。 然而，目前爲止關於光阻所要求者，例如有須提升感 度、解析性、耐熱性、焦點深度大小之特性、光阻圖型斷 面形狀等，以及曝光及曝光後加熱（PEB)間之胺等的污染 導致之光阻圖型劣化造成之放置經時安定性，以及關於在 -5- (2) 1291602 有氮化矽（SiN)膜等絕緣膜、多結晶矽（Poly-Si)膜等半導 體膜、氮化鈦（TiN)膜等金屬膜類之各種包覆膜之矽晶圓 上’須抑制其光阻圖型形狀變化之基板依存性。這些要 求，某程度已被解決，惟特別重要之課題如缺陷者，則多 尙待解決。 ^ 此種缺陷，係指藉由表面缺陷觀察裝置，由顯像後之 , 光阻圖型正上方觀察，而檢測得知之光阻圖型及光罩圖型 • 間之不一致點，舉例而言，係指由於光阻圖型形狀相異、 浮渣、及污染物之存在，色斑、圖型間之連結等，所發生 之不一致點，由於缺陷數目越多，半導體元件之良率越 低’因此上述光阻特性即使優良，此缺陷如無法解決，半 導體元件將很難有效率地進行量產。因此，到目前爲止已 有很多嘗試，提出減少該缺陷之方法。 此種缺陷之原因有各種可能，惟其中之一則爲顯像時 微泡之發生及漂洗時曾被除去之不溶物再度附著之情形。 • 欲減少此種缺陷之方法，有提出將圖型形成用之正型 光阻組成物本身之組成加以改變，所改良之方法（1?2002-1 488 1 6A) ’惟此種組成之變更因爲將伴隨著步驟本身之變 更，因此並不理想。 再者’有在光阻圖型形成時，塗布含有厭水基及親水 基之缺陷處理劑（即界面活性劑）之方法（JP200 1 -23 8 93 A)， 根據此一方法，將有光阻圖型之頂端部分變圓，橫斷面之 垂直性損壞，並因處理而造成光阻膜減少之缺點。再者， 一般而言，在顯像處理時，顯像液係以集中管線供應之 -6 - (3) 1291602 故，在必須使用多種光阻之半導體製造工廠中，就必須配 合各種光阻而改變處理劑，此時就必須對於管線中加以洗 淨，從而該方法並不適當。 進一步，在微影顯像步驟中，已知以不含金屬離子之 有機鹼與非離子性界面活性劑爲主成分之顯像液，可減低 缺陷之方法（JP2 00 1 - 1 59824)，惟該法除無法獲得充分之缺 陷減少之效果，在上述工廠中欲進行變更亦有處理上之諸 多不便。 另一方面，已知另有使用分子量200以上之難揮發性 芳香族磺酸之pH値3 · 5以下之水性溶液，並於曝光後加 熱前進行處理，以減少缺陷之方法（JP2002-323 774A)，惟 其在工業化上，並無法將缺陷減少到完全令人滿意之程 度。 【發明內容】 鲁 發明之揭示 本發明之目的，係基於上述背景，提出一種新穎的微 影用漂洗液，其係針對光阻圖型，在不損及產品品質之情 形下，減少其表面瑕疵（亦即Defect缺陷），賦予其對 於電子線照射之抗性，並可用於抑制光阻圖型之收縮；並 且’提出一種使用該微影用漂洗液之光阻圖型之形成方 法。 本發明者們，經過努力反覆硏究之結果，開發出不損 及漂洗功能，可減少光阻圖型之缺陷，且賦予光阻對於電 -7- (4) 1291602 子線照射之抗性，並提升產量之處理液，亦即，該水溶液 係含有（A)分子構造中具有氮原子之水溶性及/或鹼性可 溶性聚合物，及（B)至少一種選自脂肪族醇類及其烷基醚 化物者。其可均一地塗布於晶圓表面，有效減少缺陷，並 賦予光阻對於電子線之抗性，且在光阻圖型形成時，鹼性 • 顯像處理後，如將光阻膜以上述溶液加以處理時，可賦予 ， 該光阻圖型良好形狀，沒有膜減損情形，並可減少缺陷， • 同時，還可抑制因電子線照射所造成之光阻圖型之收縮。 從而，完成了本發明。 亦即，本發明係提供一種微影用漂洗液，其特徵爲該 構成水溶液係含有（A)分子構造中具有氮原子之水溶性及 /或鹼性可溶性聚合物，及（B)至少一種選自脂肪族醇類 及其烷基醚化物者；以及，提供一種光阻圖型之形成方 法，其特徵爲進行 (1)在基板上設置光阻膜之步驟； • (2)藉由光罩圖型對於該光阻膜選擇性地進行曝光處 理之步驟； (3)將該曝光處理過之光阻膜進行曝光後加熱（PEB)處 理之步驟； , (4)將該PEB處理過之光阻膜進行鹼性顯像處理之步 驟；以及 (5)以如上述之微影用漂洗液，將該已經鹼性顯像的 光阻膜加以處理之步驟。 本發明中，作爲（A)成分使用之水溶性及/或鹼性可 (5) 1291602 溶性聚合物，其分子構造中必須含有氮原子。該氮原子可 包含於聚合物之基幹分子鏈中，亦可以作爲含氮取代基而 包含於側鏈中。 在基幹分子鏈中含有氮原子之聚合物，例如有低級院 撐亞胺之聚合物或與低級烷撐亞胺單獨形成水溶性聚合物 之與其他單體之共聚物，惟基於取得容易之觀點，係以聚 乙撐亞胺爲理想。 該聚乙撐亞胺，例如可於二氧化碳、氯、溴化氫酸、 P-甲苯磺酸等酸催化劑之存在下，藉由開環聚合而容易地 製得，或亦可由市售品購得。 再者，在側鏈中含有含氮取代基之聚合物，例如有具 有政基或取代胺基及含氮雜環基之不飽和碳化氫之聚合 物。在此所謂聚合物，係指聚合物或共聚物。具有胺基之 不飽和碳化氫之聚合物，例如有聚烯丙基胺。此種聚烯丙 基胺，例如可於自由基聚合起始劑之存在下，將烯丙基胺 鹽酸鹽加熱而容易地獲得。 本發明所使用之含有含氮取代基之聚合物，其特別理 想者係具有一般式 R-C·-X I H2 c \)/ /c\ 基 甲 或 子 原 氫 爲 R 中 式1291602 (1) IX. INSTRUCTIONS OF THE INVENTION [Technical Field] The present invention relates to a lithography rinsing liquid which is obtained by contacting a rinsing liquid after imagewise exposing the photoresist after imagewise exposure. It can maintain the surface uniformity of the photoresist surface to the developing liquid or water, can reduce the contact angle, and can inhibit the occurrence of microbubbles. Furthermore, it can be homogenized even for large wafers of, for example, about 300 mm. Coating is carried out, and as a result, defects after the rinsing treatment can be effectively reduced, or resistance to electron rays can be enhanced, or light-resistance pattern shrinkage due to electron beam irradiation can be suppressed. The present invention relates to a light. The formation method of the resistance pattern. [Prior Art] In recent years, with the miniaturization and integration of semiconductor devices, the mainstream of this micro-machining light source has been changed from a conventional ultraviolet ray to a g-line (436 nm) which can form a higher resolution photoresist pattern. Then change from g line to short-wavelength i-line (3 65 nm), change from i-line to KrF excimer thunder beam (248 nm), and now continue to change to ArF excimer laser (193 nm), F2 Molecular lightning rays (157 nm), even electron beams such as EB and EUV, and the steps and photoresist materials suitable for these short-wavelength light sources are also rapidly being developed. However, as far as the requirements for photoresist are concerned, for example, there is a need to improve sensitivity, resolution, heat resistance, depth of focus, resistive cross-sectional shape, and amine between exposure and post-exposure heating (PEB). The time-dependent stability caused by the deterioration of the photoresist pattern caused by the contamination, and the insulating film such as a tantalum nitride (SiN) film, a poly-Si film, etc. at -5-(2) 1291602 On a silicon wafer of various coating films such as a semiconductor film or a titanium nitride (TiN) film, the substrate dependency of the change in the shape of the photoresist pattern must be suppressed. Some of these requirements have been resolved, but the most important issues, such as those that are defective, are more urgent to resolve. ^ This kind of defect refers to the inconsistency between the photoresist pattern and the reticle pattern, as seen from the surface of the photoresist pattern by the surface defect observation device. Is the inconsistency caused by the difference in the shape of the photoresist pattern, the scum, and the presence of contaminants, the connection between the color spots and the pattern, and the lower the yield of the semiconductor element due to the larger number of defects Therefore, even if the above-mentioned photoresist characteristics are excellent, if this defect cannot be solved, the semiconductor element will be difficult to mass-produce efficiently. Therefore, there have been many attempts so far to propose ways to reduce this defect. There are various possibilities for such defects, but one of them is the occurrence of microbubbles during development and the re-attachment of insoluble matter that has been removed during rinsing. • In order to reduce such defects, there is a proposal to change the composition of the positive-type photoresist composition itself for pattern formation (1?2002-1 488 1 6A). It is not ideal because it will be accompanied by changes in the steps themselves. Furthermore, there is a method of applying a defect treating agent (ie, a surfactant) containing a water-repellent base and a hydrophilic group when a resist pattern is formed (JP200 1 -23 8 93 A), according to which a light is to be present The top portion of the resist pattern is rounded, the verticality of the cross section is damaged, and the photoresist film is reduced due to the treatment. Furthermore, in general, in the development process, the developing liquid is supplied in a concentrated pipeline, -6 - (3) 1291602. Therefore, in a semiconductor manufacturing factory where a plurality of photoresists must be used, it is necessary to match various photoresists. Changing the treatment agent, it is necessary to wash the line at this time, so that the method is not appropriate. Further, in the lithography step, a developing solution containing a metal ion-free organic base and a nonionic surfactant as a main component is known, and a defect can be reduced (JP 2 00 1 - 1 59824). In addition to the inability to obtain sufficient effect of reducing defects, the method is also inconvenient to handle in the above-mentioned factories. On the other hand, it is known to use an aqueous solution having a molecular weight of 200 or more of a nonvolatile aromatic sulfonic acid having a pH of 5.3 or less and to treat it before heating after exposure to reduce defects (JP2002-323 774A) ), but in industrialization, it is impossible to reduce the defects to a completely satisfactory level. SUMMARY OF THE INVENTION The purpose of the present invention is based on the above background, and proposes a novel lithographic rinsing liquid for reducing the surface flaw of the photoresist pattern without damaging the quality of the product. (ie, Defect defect), which imparts resistance to electron beam irradiation, and can be used to suppress shrinkage of the photoresist pattern; and 'proposes a method of forming a photoresist pattern using the lithography rinse. The inventors of the present invention have succeeded in researching and developing the function of not damaging the rinsing function, thereby reducing the defects of the photoresist pattern and imparting resistance to the electric light to the electric -7-(4) 1291602 sub-line irradiation. And the treatment liquid for increasing the yield, that is, the aqueous solution contains (A) a water-soluble and/or alkali-soluble polymer having a nitrogen atom in the molecular structure, and (B) at least one selected from the group consisting of aliphatic alcohols and alkanes thereof Base ethers. It can be uniformly applied to the surface of the wafer to effectively reduce defects and impart resistance to the electron line of the photoresist, and in the formation of the photoresist pattern, after the alkaline image development process, such as the photoresist film as the above solution When processed, the photoresist pattern can be imparted with a good shape, no film damage, and defects can be reduced, and at the same time, shrinkage of the photoresist pattern caused by electron beam irradiation can be suppressed. Thus, the present invention has been completed. That is, the present invention provides a lithographic rinse liquid characterized in that the aqueous solution contains (A) a water-soluble and/or alkali-soluble polymer having a nitrogen atom in a molecular structure, and (B) at least one selected And a method for forming a photoresist pattern; and providing a method for forming a photoresist pattern, wherein: (1) a step of disposing a photoresist film on the substrate; (2) by using a photomask a step of selectively performing exposure processing on the photoresist film; (3) performing a post-exposure heating (PEB) process on the exposed photoresist film; (4) treating the PEB-treated light a step of performing an alkaline development process on the resist film; and (5) a step of treating the photoresist film which has been subjected to alkaline development by using the lithography rinse liquid as described above. In the present invention, the water-soluble and/or basic (5) 1291602-soluble polymer used as the component (A) must contain a nitrogen atom in its molecular structure. The nitrogen atom may be contained in the base molecular chain of the polymer or may be contained in the side chain as a nitrogen-containing substituent. A polymer containing a nitrogen atom in a backbone molecular chain, for example, a polymer having a lower-grade imine or a copolymer of a water-soluble polymer and a lower monomer with a lower alkyleneimine, but based on an easy viewpoint It is ideally made of polyethyleneimine. The polyethyleneimine can be easily produced, for example, by ring-opening polymerization in the presence of an acid catalyst such as carbon dioxide, chlorine, hydrogen bromide or P-toluenesulfonic acid, or can be obtained from a commercially available product. . Further, a polymer containing a nitrogen-containing substituent in the side chain, for example, a polymer having a hydrophilic group or a substituted amino group and a nitrogen-containing heterocyclic group-unsaturated hydrocarbon. By polymer is meant herein a polymer or copolymer. A polymer having an amine group of unsaturated hydrocarbon, such as polyallylamine. Such a polyallylamine can be easily obtained, for example, by heating the allylamine hydrochloride in the presence of a radical polymerization initiator. The polymer containing a nitrogen-containing substituent used in the present invention is particularly preferred to have the general formula R-C·-X I H2 c \)/ /c\ or a hydrogen atom as R.
基 環 ^一二 氮 含 爲 X -9- (6) 1291602 所示的具有含氮雜環基之構成單位之水溶性及/或驗 可溶性聚合物。 上述一般式（I)中X所示之含氮雜環基’例如有吡咯 基、咪唑基、咪唑啉基、吡π坐基、噻哩基、0惡哗基、異噁 唑基、吡啶基、吡嗪基、嘧啶基、噠嗪基、三唑基、吲哚 基、喹啉基、嗎啉代基、丁內醯胺、己內醯胺等，惟亦可 爲這些以外之含氮雜環基。 在這些雜環基之基幹碳鏈上之鍵結位置，其並無特別 之限制，可爲氮原子，亦可爲碳原子。 再者，本發明中所使用之含有含氮雜環基之聚合物， 亦可爲具有以上述一般式（I)表示之含氮雜環之單體單 位，及與其單獨形成水溶性聚合物之單體衍生之單體單 位，所共同構成之共聚物。 這些含有具含氮雜環基之單體單位之水溶性及/或鹼 可溶性聚合物，例如可由一般式The ring is a water-soluble and/or solubility-soluble polymer having a nitrogen-containing heterocyclic group as a constituent unit represented by X -9-(6) 1291602. The nitrogen-containing heterocyclic group represented by X in the above general formula (I) is, for example, pyrrolyl group, imidazolyl group, imidazolinyl group, pyridinium group, thioxanyl group, oxonyl group, isoxazolyl group, pyridyl group. , pyrazinyl, pyrimidinyl, pyridazinyl, triazolyl, fluorenyl, quinolyl, morpholino, behenylamine, caprolactam, etc., but may also be nitrogen-containing impurities other than these Ring base. The bonding position on the basic carbon chain of these heterocyclic groups is not particularly limited and may be a nitrogen atom or a carbon atom. Further, the polymer containing a nitrogen-containing heterocyclic group used in the present invention may be a monomer unit having a nitrogen-containing hetero ring represented by the above general formula (I), and a water-soluble polymer formed therewith. Monomer-derived monomer units, copolymers that are formed together. These water-soluble and/or alkali-soluble polymers containing a monomer unit having a nitrogen-containing heterocyclic group, for example, may be of a general formula
RR
I CH2=C (II)I CH2=C (II)
X (式中，R及X之意義與前述相同） 所示的具有含氮雜環基之單體；或與其單獨形成水溶 性聚合物之單體之混合物，進行聚合反應而得到。此時之 聚合，係指單獨聚合及共聚合。 -10- (7) (7)1291602 上述一般式（II)所表示之單體中，較理想者係乙烯基 咪唑、乙烯基咪唑啉、乙烯基吡啶、乙烯基吡咯烷酮、乙 烯基嗎啉、及乙烯基己內醯胺。 與具有這些含氮雜環基之單體；或與該單體單獨聚合 時，所形成水溶性聚合物之單體之混合單體，其聚合可依 據一般方法依溶液聚合法、懸浮聚合法行之。 上述單獨形成水溶性聚合物之單體，例如有乙酸乙烯 (加I水分解形成乙烯醇單位）、丙烯酸或甲基丙烯酸之羥烷 基酯等不含氮原子之單體等。這些單體，可單獨地使用， 或者二種以上組合加以使用。 再者，與此時之具有含氮雜環基之單體，單獨形成水 溶性聚合物之單體之比率，其質量比爲10 : 0〜1 : 9，理 想則爲9 : 1〜2 : 8之範圍。具有含氮雜環基之單體之比率 如較此値爲少時，光阻表面之吸附性能會降低，從而造成 所期待之特性，亦即防止圖型倒塌之能力亦會降低。此種 共聚體之質量平均分子量係 500〜1，500,000，理想則爲 1，000〜50,000之範圍。此聚合物，並以含有陽離子性之單 體者爲特別理想。 此種共聚體係習知者，例如BASF公司所販售者（產 品名 LUVITEC VPI55K72 W 及產品名 Sokalan HP56)，以 及TOSOH公司所販售者（聚乙烯基咪唑啉）。 本發明之微影用漂洗液，其係於基板上成像曝光後之 光阻膜，在進行鹼性顯像後之階段中，處理該基板時所使 用者。該處理係將承載光阻膜之基板，浸漬於該處理液 -11 - (8) 1291602 中，或於光阻膜上將該漂洗液塗布或噴灑而進行。該漂洗 液中之水溶性及/或鹼性可溶性聚合物濃度，例如可爲 0.001〜10質量％ 、理想爲0.01〜3質量％之濃度。該漂洗 液之處理時間，則以1〜3 0秒爲足夠。 此外，本發明之（B)成分，亦即至少一種選自脂肪族 * 醇及其烷基醚化物，即使在將塗布漂洗液時所生之微泡加 1 以消泡，或在大型晶圓上塗布者，均具有將（A)成分即水 φ 溶性或鹼性可溶性聚合物分散、擴散於表面上時，形成均 一塗膜之作用。 此脂肪族醇或其烷基醚化物，有烷醇或其烷基醚化 物，如甲醇、乙醇、1-丙醇、2-丙醇、η-丁醇、異丁醇、 卜丁醇、二乙醚、乙丙醚、及三氟乙醇、二氯乙醇等烷醇 之一部或全部氫原子被氟原子取代之化合物；烷撐二醇或 其烷基醚化物，如1，2-乙二醇、1，3-丙二醇、1，4-丁 二醇、2，3-丁二醇、1，5-戊二醇及其等之單甲基醚、單 • 乙基醚或單丙基醚；以及聚烷撐二醇或其烷基醚化物，如 二乙二醇、三乙二醇、四乙二醇、分子量 100〜10, 〇〇〇之 聚乙二醇、二丙二醇、三丙二醇、分子量100〜1 0,000之 聚氧化乙烯、聚氧化丙烯、分子量10 0〜10,000之聚（氧 化乙烯/氧化丙烯）及其等之甲基醚、乙基醚、丙基醚、 及甘油等。 這些可單獨使用，或二種以上組合使用。 這些之（Β)成分，相對於漂洗液全質量，其濃度範圍 係0 · 0 0 0 1〜1 5質量％，理想則係0 · 0 0 5〜1 0質量％之範圍。 -12- (9) 1291602 特別在使用聚烷撐二醇時，即使5 00 ppm以下亦確認有充 足之效果。 本發明之微影用漂洗液，其可將上述之水溶性及/或 鹼性可溶性聚合物與脂肪族醇及其烷基醚化物，以一定之 比例溶解於水中而製備得到。 • 此一漂洗液中，可根據需要添加酸並調整其酸性，或 ， 加入胺化合物及第四級銨之氫氧化物，而將pH値調整爲 φ 8以上之鹼性。添加此種化合物，能有效地防止組成物之 經時劣化之情形。 此一漂洗液中，如欲提升其塗布性等目的，可根據需 要而使其含有習知之界面活性劑。此種界面活性劑，例如 有N-辛基-2-吡咯烷酮等。 藉由此一處理，因爲光阻圖形表面上之液界面，其接 觸角爲40度以下，理想則降至30度以下之故，可獲致光 阻圖型表面之洗淨效率提高之效果，亦即，不論型式可獲 φ 致缺陷數全面減低之效果。再者，本發明之漂洗液，因具 有降低光阻圖型表面之接觸角之作用，故能防止曾經被從 光阻圖型除去，而懸浮於漂洗液中又再度附著之情形，而 進一步具有減低再析出系之缺陷之效果。此外，此接觸角 如繼續有需要以純水進行漂洗處理者，其間亦能保持一 定。 上述之漂洗液，特別以使用光阻膜形成光阻圖型者爲 理想。此時之光阻圖型之形成方法，係如以下（1)〜（5)步驟 所示。 -13- (10) 1291602 首先，（1)步驟係在基板上形成光阻膜之步驟。 基板一般係使用矽晶圓。並且，用以形成光阻膜之光 阻組成物，係使用習知者。 此（1)步驟中，係於矽晶圓等基板上，將前述所製作 之光阻組成物之溶液，以塗布機進行塗布，再經乾燥處理 - 而形成光阻膜。 ， 再者，（2)步驟中，係藉由光罩圖型對於（1)步驟所形 φ 成之光阻膜，選擇性地進行曝光處理，以形成潛像之後， 再於（3)步驟以PEB處理。該（2)步驟及（3)步驟，與傳統上 使用光阻以形成光阻圖型之方法完全相同。 接著將如此經PEB處理之光阻膜，以（4)步驟進行鹼 性顯像處理。該鹼性顯像處理，舉例而言，可以1〜1 0質 量％濃度，理想上可以2.38質量％濃度之四甲基氫氧化 銨水溶液（以下以TMAH水溶液簡稱）處理之。 在（4)步驟後之（5)步驟，係將鹼性顯像處理後之光阻 • 膜，以前述之微影用漂洗液處理之。 一般半導體元件係大量生產，使得產量就成爲重要之 條件，顯像處理時間係以儘可能縮短爲理想。此處理時間 則於1〜3 0秒間加以選擇。藉由該處理，可將對於光阻表 面之溶液之接觸角，降到（一般）40度以下。 如此地，（A)成分如使用含有聚烯丙基胺之微影用漂 洗液進行漂洗處理時’可視需要將後續之光阻表面之純水 接觸角提升，從而在以含水溶性氟碳化合物之第二之漂洗 液處理時，具有除去水分，亦即更能甩去水分之效果。此 -14- (12) 1291602 碳化合物之漂洗液處理時，可進一步將其改變成爲 70度 以上之高接觸角。從而，以上述之處理，其優點在於可有 效地防止圖型倒塌，並能製造高品質之產品。 【實施方式】 實施本發明之最佳型態 以下，茲依實施例說明實施本發明之最佳型態，惟本 發明並不限於這些實施例。 參考例 將防反射膜材料（Brewer公司製，產品名稱爲 ARC29A)塗布在6英吋（152.4 mm)矽晶圓上，於215°C下 進行60秒之加熱處理，而形成膜厚77 nm之防反射膜。 再於此防反射膜上，將正型光阻（東京應化工業社 製，產品名稱爲「TARF-P61 1 1」），以塗佈機進行2000 rpm、90秒鐘之塗布，於形成膜厚18 nm之光阻膜後，立 即以2.38質量％之四甲基氫氧化銨水溶液（23 °C )，進行 60秒鐘顯像處理，並作爲被處理用之樣品。 實施例1 將乙烯基吡咯烷酮/乙烯基咪唑啉以質量比1 : 1共聚 合，製作成水溶性聚合物（質量平均分子量1 0，0 0 0 )後’再 以0.1質量％之濃度溶解成水溶液之微影用漂洗液（N 0 · 1 )，另外再於其上將表1所示之脂肪族醇各添加濃度爲1 -16- (13) (13)1291602 質量％者，而製成三種微影用漂洗液（No· 2〜4)。 然後，在參考例所得到之被處理用之樣品上，利用塗 布機將上述微影用漂洗液以2000 rpm、6秒鐘進行塗布之 後，再利用純水以5 00 rpm、3秒鐘加以漂洗。 針對上述所得到之各樣品，以接觸角計（協和界面_ 學社製，產品名「CA-X 150」），測定樣品之邊緣部分、 中心部分、及其中間部分之接觸角（1 〇 · 〇秒）。其結果示於 表1 0 表1X (wherein the meanings of R and X are the same as defined above) is a mixture of a monomer having a nitrogen-containing heterocyclic group or a monomer which forms a water-soluble polymer alone, and is obtained by polymerization. Polymerization at this time means individual polymerization and copolymerization. -10- (7) (7)1291602 Among the monomers represented by the above general formula (II), preferred are vinyl imidazole, vinyl imidazoline, vinyl pyridine, vinyl pyrrolidone, vinyl morpholine, and Vinyl caprolactam. When the monomer having such a nitrogen-containing heterocyclic group is used; or when the monomer is polymerized alone, the monomer of the monomer of the water-soluble polymer formed can be polymerized according to a general method according to a solution polymerization method or a suspension polymerization method. It. The monomer which forms the water-soluble polymer alone may, for example, be a monomer containing no nitrogen atom such as vinyl acetate (hydrogenated with I to form a vinyl alcohol unit), a hydroxyalkyl acrylate or methacrylic acid ester or the like. These monomers may be used singly or in combination of two or more. Further, the ratio of the monomer having a water-soluble polymer alone to the monomer having a nitrogen-containing heterocyclic group at this time has a mass ratio of 10:0 to 1:9, and desirably 9:1 to 2: The scope of 8. When the ratio of the monomer having a nitrogen-containing heterocyclic group is less than that of the ruthenium, the adsorption property of the resistive surface is lowered, so that the desired characteristics are obtained, that is, the ability to prevent pattern collapse is also lowered. The copolymer has a mass average molecular weight of 500 to 1,500,000, and preferably 1,000 to 50,000. This polymer is particularly preferred as a monomer containing a cationic substance. Such copolymerization systems are known, for example, from BASF Corporation (product name LUVITEC VPI55K72 W and product name Sokalan HP56), and those sold by TOSOH Corporation (polyvinylimidazoline). The lithographic rinsing liquid of the present invention is a photoresist film which is imagewise exposed on a substrate, and is used when the substrate is processed in a stage after alkaline development. This treatment is carried out by immersing the substrate carrying the photoresist film in the treatment liquid -11 - (8) 1291602, or coating or spraying the rinse liquid on the photoresist film. The concentration of the water-soluble and/or alkali-soluble polymer in the rinse liquid may be, for example, 0.001 to 10% by mass, preferably 0.01 to 3% by mass. The treatment time of the rinse liquid is preferably 1 to 30 seconds. Further, the component (B) of the present invention, that is, at least one selected from the group consisting of aliphatic alcohols and alkyl etherates thereof, is added to the defoaming of the microbubbles which are produced when the rinsing liquid is applied, or in a large wafer. Each of the upper coaters has a function of forming a uniform coating film when the water φ soluble or alkaline soluble polymer (A) component is dispersed and diffused on the surface. The aliphatic alcohol or alkyl etherate thereof, which is an alkanol or an alkyl ether compound thereof, such as methanol, ethanol, 1-propanol, 2-propanol, η-butanol, isobutanol, butanol, a compound in which one or all of the hydrogen atoms of an alkyl alcohol such as trifluoroethanol or dichloroethanol are replaced by a fluorine atom; an alkylene glycol or an alkyl etherate thereof, such as 1,2-ethanediol , 1,3-propanediol, 1,4-butanediol, 2,3-butanediol, 1,5-pentanediol, and the like monomethyl ether, monoethyl ether or monopropyl ether; And polyalkylene glycol or alkyl etherate thereof, such as diethylene glycol, triethylene glycol, tetraethylene glycol, molecular weight 100~10, polyethylene glycol, dipropylene glycol, tripropylene glycol, molecular weight 100 to 1,000,000 polyoxyethylene, polypropylene oxide, poly(ethylene oxide/propylene oxide) having a molecular weight of 10 0 to 10,000, and methyl ether, ethyl ether, propyl ether, and glycerin thereof. These may be used alone or in combination of two or more. The (Β) component has a concentration range of 0·0 0 0 1 to 15 mass% with respect to the total mass of the rinse liquid, and is preferably in the range of 0·0 0 5 to 10% by mass. -12- (9) 1291602 Especially when using polyalkylene glycol, even if it is below 500 ppm, it is confirmed that it has sufficient effect. The lithographic rinse liquid of the present invention can be prepared by dissolving the above-mentioned water-soluble and/or alkali-soluble polymer and an aliphatic alcohol and an alkyl etherate thereof in water at a certain ratio. • In this rinse solution, acid may be added and acidity may be adjusted as needed, or an amine compound and a fourth-order ammonium hydroxide may be added to adjust the pH to a basicity of φ 8 or more. The addition of such a compound can effectively prevent the deterioration of the composition over time. In the rinsing liquid, for the purpose of improving the coatability and the like, a conventional surfactant may be contained as needed. Such a surfactant is, for example, N-octyl-2-pyrrolidone or the like. By this treatment, since the liquid interface on the surface of the photoresist pattern has a contact angle of 40 degrees or less, and ideally falls below 30 degrees, the effect of improving the cleaning efficiency of the photoresist pattern surface can be obtained. That is, regardless of the type, the effect of the total number of defects caused by φ can be obtained. Furthermore, the rinsing liquid of the present invention has the effect of reducing the contact angle of the surface of the resist pattern, thereby preventing the situation in which it has been removed from the photoresist pattern and suspended in the rinsing liquid, and further has Reduce the effect of defects in the re-precipitation system. In addition, if the contact angle continues to need to be rinsed with pure water, it can be maintained. The above-mentioned rinsing liquid is particularly preferably one in which a photoresist pattern is formed using a photoresist film. The method of forming the photoresist pattern at this time is as shown in the following steps (1) to (5). -13- (10) 1291602 First, the step (1) is a step of forming a photoresist film on a substrate. The substrate is typically a germanium wafer. Further, a photoresist composition for forming a photoresist film is used. In the step (1), a solution of the photo-resist composition prepared as described above is applied onto a substrate such as a germanium wafer by a coater and then dried to form a photoresist film. Further, in the step (2), the photoresist film formed in the step (1) by the mask pattern is selectively subjected to exposure processing to form a latent image, and then in step (3). Processed with PEB. The steps (2) and (3) are identical to the conventional method of using a photoresist to form a photoresist pattern. Next, the thus treated PEB-treated photoresist film was subjected to alkali development processing in the step (4). The alkaline development treatment can be carried out, for example, at a concentration of 1 to 10% by mass, and ideally, a tetramethylammonium hydroxide aqueous solution (hereinafter referred to as an aqueous TMAH solution) having a concentration of 2.38 mass%. In the step (5) after the step (4), the photoresist film after the alkaline development treatment is treated with the above-mentioned lithography rinse liquid. In general, semiconductor components are mass-produced, making yield an important condition, and development processing time is preferably as short as possible. This processing time is selected between 1 and 30 seconds. By this treatment, the contact angle of the solution for the photoresist surface can be lowered to (generally) 40 degrees or less. Thus, when the component (A) is rinsed with a lithographic rinse solution containing polyallylamine, the contact angle of the pure water of the subsequent photoresist surface may be increased as needed, thereby containing a water-soluble fluorocarbon. When the second rinse liquid is treated, it has the effect of removing moisture, that is, it is more capable of removing moisture. When the -14-(12) 1291602 carbon compound rinse is treated, it can be further changed to a high contact angle of 70 degrees or more. Thus, in the above treatment, it is advantageous in that it can effectively prevent the pattern from collapsing and can manufacture a high quality product. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the best mode for carrying out the invention will be described by way of examples, but the invention is not limited to the embodiments. Reference Example An anti-reflection film material (manufactured by Brewer, product name: ARC29A) was coated on a 6-inch (152.4 mm) germanium wafer, and heat-treated at 215 ° C for 60 seconds to form a film thickness of 77 nm. Anti-reflection film. On the antireflection film, a positive photoresist (product name: "TARF-P61 1 1", manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied at 2000 rpm for 90 seconds to form a film. Immediately after the photoresist film having a thickness of 18 nm, a developing solution of 2.38% by mass of a tetramethylammonium hydroxide aqueous solution (23 ° C) was used for 60 seconds, and it was used as a sample for processing. Example 1 Vinylpyrrolidone/vinylimidazoline was copolymerized at a mass ratio of 1:1 to prepare a water-soluble polymer (mass average molecular weight of 10,0 0 0), and then dissolved into an aqueous solution at a concentration of 0.1% by mass. The lithography rinsing liquid (N 0 · 1 ), and further adding the aliphatic alcohols shown in Table 1 to the concentration of 1 -16-(13) (13)1291162% by mass, and making three kinds The lithography rinse solution (No. 2 to 4). Then, the lithographic rinse liquid was applied at 2000 rpm for 6 seconds by a coater on the sample for treatment obtained in the reference example, and then rinsed with pure water at 500 rpm for 3 seconds. . For each sample obtained above, the contact angle of the edge portion, the center portion, and the middle portion of the sample was measured by a contact angle meter (product name "CA-X 150" manufactured by Kyowa Co., Ltd.) (1 〇· Leap seconds). The results are shown in Table 1 0 Table 1
No. 脂肪族醇 接觸角（1 0 · (Μ 沙） 邊緣部分 中間部分 中心部分 1 撒 25.2 2 1.2 23.5 2 異丙醇 23.3 23.3 23.6 3 甘油 21.7 21.5 21.2 4 三氟乙醇 21.7 21.4 22.1 在使用添加有脂肪族醇之漂洗液時，不論何者，其漂 洗液之接觸角在晶圓面內皆係均一。甚至，在此同時，漂 洗液洗淨之效果在晶圓面內亦係均一。 實施例2 在與實施例1所用者相同之水溶性聚合物水溶液上， 以1質量％、5質量％、及1 〇質量％之濃度之異丙醇進行 添加，而製作成三種微影用漂洗液。 然後，以未添加異丙醇者及上述三種漂洗液，與實施 例1相同地，對於參考例所得到之被處理用樣品進行處 -17- (14) 1291602 理。 針對如此所得到之樣品，使用表面缺陷觀察裝置 (KLA Tencor公司製，產品名「KLA-2131」）測定缺陷 數，並以未添加異丙醇者作爲1〇〇，再求出各自之相對個 數，其結果示於表2。 表2No. Aliphatic alcohol contact angle (1 0 · (Μ沙) Edge part Middle part Center part 1 Sprinkle 25.2 2 1.2 23.5 2 Isopropanol 23.3 23.3 23.6 3 Glycerin 21.7 21.5 21.2 4 Trifluoroethanol 21.7 21.4 22.1 Added in use In the case of the decant of the aliphatic alcohol, the contact angle of the rinsing liquid is uniform in the wafer surface, and even at the same time, the effect of the rinsing liquid is uniform in the wafer surface. The same aqueous solution of the water-soluble polymer as used in Example 1 was added at a concentration of 1% by mass, 5% by mass, and 1% by mass of isopropyl alcohol to prepare three kinds of lithographic rinse liquids. The sample to be treated obtained in the reference example was subjected to the same procedure as in Example 1 in the same manner as in Example 1 except that the isopropyl alcohol was not added and the above three kinds of rinsing liquids. For the sample thus obtained, the sample was used. The number of defects was measured by a surface defect observation apparatus (product name "KLA-2131" manufactured by KLA Tencor Co., Ltd.), and the number of defects was determined by adding no isopropyl alcohol, and the relative number of each was determined. The results are shown in Table 2. . Table 2
No. 異丙醇濃度 (質量％ ) 相對缺陷數 1 0 100 2 1 75 3 5 69 4 10 63No. Isopropanol concentration (% by mass) Relative defect number 1 0 100 2 1 75 3 5 69 4 10 63
其結果顯示，脂肪族醇之添加量越大，缺陷數就越減 少。 實施例3 將異丙醇、聚氧化乙烯（竹本油脂製，產品名稱^ 八彳才二y MP-400」，質量平均分子量400)及聚（氧化 乙烯/氧化丙烯）（竹本油脂製，產品名稱「八彳才二y p-1028-P」，質量平均分子量3000)作爲脂肪族醇’各自使 用1質量％之濃度’再與實施例2相同地計算出相對之缺 陷數。再者，其基準則使用未添加脂肪族醇者之缺陷數 (1 2 0 0)。而其結果則示於表3。 -18- (15) 1291602 表3As a result, the larger the amount of the aliphatic alcohol added, the smaller the number of defects. Example 3 Isopropanol, polyethylene oxide (made by Takeshi Oil & Fats, product name ^ 彳 彳 二 y MP-400, mass average molecular weight 400) and poly(ethylene oxide / propylene oxide) (made by Takeshi Oil & Fat, product name) In the same manner as in Example 2, the relative defect number was calculated in the same manner as in Example 2, using "concentration of mass average molecular weight of 3,000" as the aliphatic alcohol'. Furthermore, the standard uses the number of defects (1 2 0 0) in which no aliphatic alcohol is added. The results are shown in Table 3. -18- (15) 1291602 Table 3
No. 脂肪族醇之種類 相對缺陷數 1 異丙醇 62.5 2 聚氧化乙烯 60.0 3 聚（氧化乙烯/氧化丙烯） 33.3 4 異丙醇+聚氧化乙烯 37.5 5 異丙醇+聚（氧化乙烯+氧 化丙烯） 25.0 對照組 Μ j \\\ 100 其結果顯示，藉由添加脂肪族醇，其缺陷數降低。 產業上可利用性 使用本發明之漂洗液，除可將對於純水之接觸角降低 至4 0度以下，提升與水系處理劑之接觸效果以外，即使 在大型晶圓之處理上，亦能將漂洗液中之有效成分均質地 分散至全體上而發生作用，而具有防止微泡發生之品質降 低之效果。再者，其能改善光阻對於電子線之抗性，抑制 因電子線照射導致之光阻圖型收縮，而保持高度之產品精 度。 從而，本發明能利用於使用微影法之LSI、ULSI等 半導體設備之製造上。 -19-No. Type of aliphatic alcohol relative defect number 1 Isopropanol 62.5 2 Polyethylene oxide 60.0 3 Poly(ethylene oxide/propylene oxide) 33.3 4 Isopropanol + polyethylene oxide 37.5 5 Isopropanol + poly(ethylene oxide + oxidation Propylene) 25.0 Control Μ j \\\ 100 The results show that the number of defects is reduced by the addition of an aliphatic alcohol. INDUSTRIAL APPLICABILITY The use of the rinse liquid of the present invention can reduce the contact angle with respect to pure water to 40 degrees or less, and improve the contact effect with the aqueous treatment agent, even in the processing of large wafers. The active ingredient in the rinse liquid is uniformly dispersed throughout the entire body to function, and has an effect of preventing the quality of microbubbles from being lowered. Furthermore, it can improve the resistance of the photoresist to the electron beam, suppress the pattern shrinkage caused by the electron beam irradiation, and maintain the high product precision. Therefore, the present invention can be utilized in the manufacture of semiconductor devices such as LSI and ULSI using the lithography method. -19-
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| EP (1) | EP1930775A1 (en) |
| JP (1) | JPWO2006025303A1 (en) |
| KR (1) | KR20070058560A (en) |
| CN (1) | CN101010639A (en) |
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| JP2008041722A (en) * | 2006-08-02 | 2008-02-21 | Dainippon Screen Mfg Co Ltd | Method and device for processing substrate |
| JP5000260B2 (en) * | 2006-10-19 | 2012-08-15 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | Method for forming fine pattern and resist substrate processing liquid used therefor |
| JP2008102343A (en) * | 2006-10-19 | 2008-05-01 | Az Electronic Materials Kk | Developed resist substrate processing liquid and method of processing resist substrate using the same |
| US20080280230A1 (en) * | 2007-05-10 | 2008-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process including a chemical rinse |
| JP5018388B2 (en) * | 2007-10-11 | 2012-09-05 | 東京エレクトロン株式会社 | Coating, developing device, coating, developing method and storage medium |
| JP5306755B2 (en) * | 2008-09-16 | 2013-10-02 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | Substrate processing liquid and resist substrate processing method using the same |
| JP2010134246A (en) * | 2008-12-05 | 2010-06-17 | Jsr Corp | Method of forming resist pattern and rinse liquid |
| US8304179B2 (en) | 2009-05-11 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing a semiconductor device using a modified photosensitive layer |
| US20110159447A1 (en) | 2009-12-25 | 2011-06-30 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography |
| JP5591623B2 (en) * | 2010-08-13 | 2014-09-17 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | Rinsing liquid for lithography and pattern forming method using the same |
| JP6106990B2 (en) * | 2012-08-27 | 2017-04-05 | 富士通株式会社 | Lithographic rinse agent, resist pattern forming method, and semiconductor device manufacturing method |
| CN104871289B (en) | 2012-12-14 | 2017-10-10 | 巴斯夫欧洲公司 | Composition comprising surfactant and hydrophobizers avoids the purposes of pattern collapse when handling the patterning materials that line spacing dimensions are 50nm or lower |
| JP6240404B2 (en) | 2013-05-09 | 2017-11-29 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | Rinsing liquid for lithography and pattern forming method using the same |
| JP6455397B2 (en) * | 2014-11-27 | 2019-01-23 | 信越化学工業株式会社 | Rinse solution for pattern formation and pattern formation method |
| JP6428568B2 (en) * | 2014-11-27 | 2018-11-28 | 信越化学工業株式会社 | Rinse solution for pattern formation and pattern formation method |
| WO2019224032A1 (en) * | 2018-05-25 | 2019-11-28 | Basf Se | Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
| JP2020067547A (en) * | 2018-10-24 | 2020-04-30 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ | Semiconductor aqueous composition and use of the same |
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| JPH06105683B2 (en) * | 1992-04-23 | 1994-12-21 | 株式会社ソルテック | Resist pattern formation method |
| JPH07142349A (en) * | 1993-11-16 | 1995-06-02 | Mitsubishi Electric Corp | Method for preventing tilting of photoresist pattern in developing step |
| JPH07335519A (en) * | 1994-06-03 | 1995-12-22 | Hitachi Ltd | Formation of pattern |
| JP2998682B2 (en) * | 1997-03-13 | 2000-01-11 | 日本電気株式会社 | Chemical amplification resist |
| US5952158A (en) * | 1998-02-04 | 1999-09-14 | Eastman Kodak Company | Photographic final rinse processing solution and method of use |
| JP4027494B2 (en) * | 1998-04-07 | 2007-12-26 | 花王株式会社 | Rinse composition |
| JP2000250229A (en) * | 1999-02-24 | 2000-09-14 | Nec Corp | Method for developing photoresist film |
| AU6696300A (en) * | 1999-07-28 | 2001-02-19 | Ciba Specialty Chemicals Holding Inc. | Water-soluble granules of salen-type manganese complexes |
| JP2002174908A (en) * | 2000-12-05 | 2002-06-21 | Nikon Corp | Developing method and method of manufacturing device |
| JP4522626B2 (en) * | 2001-09-28 | 2010-08-11 | 花王株式会社 | Rinse solution |
| JP4045180B2 (en) * | 2002-12-03 | 2008-02-13 | Ａｚエレクトロニックマテリアルズ株式会社 | Rinsing liquid for lithography and resist pattern forming method using the same |
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| US20080193876A1 (en) | 2008-08-14 |
| CN101010639A (en) | 2007-08-01 |
| KR20070058560A (en) | 2007-06-08 |
| EP1930775A1 (en) | 2008-06-11 |
| TW200625030A (en) | 2006-07-16 |
| JPWO2006025303A1 (en) | 2008-07-31 |
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