TWI290341B - Method of fabricating a coated process chamber component - Google Patents

Abstract

A method of fabricating a process chamber component that has a ceramic form with grains and grain boundary regions. In the method, the component is bead blasted to provide a surface having a relatively low roughness average of less than about 150 microinches. The component is dipped into a solution having a concentration that is sufficiently low to reduce etching of grain boundary regions of the ceramic form. A metal coating is formed over at least a portion of the ceramic form. The component fabricated by this method can tolerate thicker deposits of sputtered material in a sputtering process without the sputtered deposit accumulates causing spalling of the coating of the component.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a manufacturing process. [Prior Art] A substrate processing chamber processes a substrate in a process of several processes. A circuit is fabricated in which the gas is such as a wafer and a display. The process chamber: an i circuit, such as an integrated circuit, generally includes a surrounding 眛栌 exciter, and an exhaust system, wherein the readback is repeated, and the fly garden surrounds a domain for the process gas to be introduced therein. The gas/mileage L-domain 瑕 发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发 激发The processing chamber is used, for example, to deposit a material on a substrate or to etch material from a substrate. For example, the processing chamber is formed by sputtering a substrate on the substrate by sputtering, wherein the material is a metal compound such as aluminum, copper or tantalum on the substrate such as titanium nitride. a special metal' or a process chamber assembly such as a nitrided group or exposed to a process is often coated with a coating to enhance the adhesion of the sputter material to the coated layer. Increasing the anti-corrosion of the plasma in the processing chamber from the 3 material corrosion corrosiveness, or to provide other desired enamel, such as a conductive surface, wherein the enamel treatment to the component system such as the treatment chamber side spleen, The top surface, the liner, or the surface of the deposition ring. For example, a chamber group is made of alumina or quartz material and coated with aluminum and coated with aluminum. In the manufacture of the shoemaker of this assembly, in the first step, the preparation of the ceramic body of the component is firstly carried out by 1239041 to process the component, followed by the step of adding grit blasting to the step of adding the acidic solution. The high sequence is used to de-immerse the module in a concentrated acidic solution in a 20% strength HF solution during the re-polishing process. The blasting step removes the existing component coating' or is used to prepare the surface of the grade to accept a new coating, and it is such that the surface of the treated component is greater than 2 (a micro-inferior high surface roughness average (Ra) The higher roughness value provides better adhesion to the upper coating on the ceramic body. Therefore, the component is then recoated or in the case of a new component in a re-polishing process. Apply new

coating. However, such conventional methods of fabricating components often result in components having unacceptably low component life, requiring frequent replacement or re-polishing of the components. For example, when such a component is used in a PVD process to deposit material onto a substrate from a target sputter, the sputter material also accumulates on the surface of the component. The accumulated deposits can cause thermal expansion stress, causing the underlying coating to delaminate, peel, and flaking from the ceramic body. The plasma in the processing chamber can diffuse to the strip or other damaged areas of the coating and corrode the exposed surface of the assembly, ultimately causing component failure.

Accordingly, it is desirable to have a process that has the ability to fabricate components having desirable surface properties in a substrate processing environment. It is even more desirable to have a component that has a good lifetime in the process of depositing excess sputter material onto the component and depositing excess sputter material onto the component. It is also desirable to apply a refurbishing step as needed when the component deteriorates during operation. 6 1290341 SUMMARY OF THE INVENTION A process for manufacturing a process - containing a ceramic body having a grain and a grain boundary region, and the method comprises at least the following steps: (a) beating the component to provide a low average value of the rough seam On a surface of 1 $〇微英;

(b) immersing the component in a solution, wherein the solution has a sufficiently low concentration of acid or base to reduce etching of the grain boundary region of the ceramic body; and (e) forming a portion on at least a portion of the ceramic body Metal coating. A method of fabricating an assembly for use in a process chamber, the assembly comprising at least a ceramic body having alumina grains and grain boundary regions, and the method comprising at least the following steps: (a) beading the assembly to provide roughness The average value is less than 15 () one-inch thick chain degree of micro-inch; (b) immersing the component in a solution containing HF, HC1 and HN〇3 at a concentration of less than about 10% by volume. One or more; and

(c) forming an aluminum coating on at least a portion of the assembly by a two-wire thermal spray process. A method of forming an assembly for use in a process chamber, the assembly comprising at least a ceramic body having alumina grains and grain boundary regions, and the method comprising at least the following steps: (a) beading the assembly to provide roughness a mean value of less than 150 micro-inch 表面 surface roughness; (b) immersing the component in a solution, wherein the solution comprises a concentration of less than 7 1290341 of about 2 diethylene glycol monobutyl ether or And (c) forming an aluminum coating on at least a portion of the ceramic body by a two-wire thermal spraying process. [Embodiment] The process of the present invention is to manufacture a coated component 300 in a process chamber, and the process has the ability to provide increased resistance to chemical corrosion of the component 3, and the anti-coating 304 from the component 300. The best ability to peel off. The process can be used to form one or more components 300 that are susceptible to corrosion in the processing chamber 36a, such as the components 3 of the substrate support 18. In one embodiment, a material 18 (component 300, comprising one or more of the deposition ring 15 or the cover ring 17 used in the deposition processing chamber 36a. The form of the other processing chamber assembly 300, for example, includes: The chamber surrounds a portion of the wall 12, such as a side wall or shield 20, a liner (not shown), or a top plate 13; a portion of the gas disperser 39, such as a gas inlet 33; a portion of the gas discharge system ;; Part of a gas energizer 9G. Figure 2 is a front view of an embodiment of an assembly 3 formed in accordance with an embodiment of the method of the present invention. In one embodiment, the processing chamber assembly comprises - (4) 3〇2 The surface of the ceramic body 302 is first treated, followed by a coating of a genus. For example, the ceramic body 302 suitable for processing and varnishing according to the process of the present invention may include One or more of alumina, tantalum carbide and aluminum nitride. The ceramic body 302 is imaginary to provide a surface 306, and the surface of the surface 306 is allowed to allow the ceramic body 302 and the upper coating 3 For example, in the case of an enhanced bond between 〇4, the table of pottery 1290341 ^^^^2 3〇6 contains the treated grain and grain boundary region, and the treatment provides a stable grain boundary region on the surface surface 306 to form a suitable strength between the ceramic body 3〇2 and the upper layer coating 304. Bonding. The same chemical impurities or other loose particles can also be removed from the surface 3〇6 of the ceramic body 302, thereby improving the adhesion of the coating 304 on the surface 306. Together with the process, by the bead shot The surface of the ceramic body 3〇2 is treated to process the chamber assembly 300. The bead strike removes any impurities on the surface 3〇6 of the ceramic body 3〇2 and removes any loose or damaged surface 336 The grains are provided to provide a surface having a specific structure and a rough surface 3〇6, thereby enhancing the adhesion between the coating 304 and the surface 306. During the beading process, the solid beads are pushed against the surface by air under pressure 3 〇6, wherein the pressure is sufficiently high to roughen the surface 306. The bead contains a material and the hardness of the material is two; the hardness of the ceramic body 302 to allow the beads to invade and coarsely round the ceramic Surface 306 of the body, forming a rough surface with a specific structure 3〇6 Suitable bead materials include, for example, oxidized, glass, _ soil, or hard f plastic. In one embodiment, the beads comprise sand-like alumina, wherein the alumina has a particle size suitable for sneezing the surface ( Mesh size), such as granules with a particle size of ^. The bead blast can be carried out in a bead blasting chamber (not shown) containing a surrounding outer casing. In this case, an improved surface 3 〇 6 treatment was found. In a method, the surface can be cleaned and treated with a relatively gentle bead blasting process without excessive roughening. This method is different from what is expected by conventional processing procedures, and conventional procedures generally use a radical beading process. The surface is highly roughened, and then any of the 1129034 soil I coated soil is added. However, during the bead pass, the surface is excessively roughened, and the surface 306 of the actual coated group of ceramics 302 forms a microfracture and damaged grain boundary region. When the grain boundary layer is significantly damaged on the surface of the ceramic body 302, the coating layer 304 applied to the damaged surface 306 has a lower coating adhesion, and the grain and bonding of the surface of the ceramic body 302. The coating 3〇4 on the surface 3〇6 becomes loose and causes the coating 304 to delaminate or peel off. Similarly, the microfracture and damaged grain boundary layer produced during the beading process will be worsened in subsequent processing steps, such as the wet cleaning step. Therefore, it is desirable to maintain the conditions of the bead strike to provide a less aggressive bead blasting process and thereby produce a lower surface roughness (where the surface roughness range is such as a roughness average below about 150 microinches). Ra), and again, for example, from about 60 to 140 micro-inch, or even less than about 12 micro-inch. The roughness average of the surface 3〇6 is the average of the absolute offsets along the roughened surface 3〇6, where the offset is the deviation of the average line of the top end and the recess of the roughened feature. . Suitable beading conditions for providing this surface roughness include: the air pressure for propelling the beads toward the surface ranges from about 3 psi to about 1 psi, even from about 40 psi to about 60 psi; the beads are relatively The angle of incidence at the surface ranges from about 45 to 90 degrees, and even from about 75 to 9 degrees; the distance from the bead chamber to the surface is from about 4 to 12 inches, or even from 5 to 8 inches. guess. The properties of surface 306, such as roughness averages, can be measured using the international standard ANSI/ASME B.46.1-1995, which details the appropriate cut off length and eVaiuati〇n length. Table 1 10 1290341 is the roughness average defined by ^^ when the cut length value is the smallest and the unique value ^ length value: corresponding " ~- Table 1 roughness average cut length minimum calculation length unique calculation length 0 to 0.8吋英吋0.003英吋0 · 0 1 6英叫· 0 · 0 1 6英口子〇·8 to 4 micro-inch 0.010 inches · 0.050 inches 0.050 inches 4 to 80 micro-inch 0 · 0 3 0 English to 0.160 inches at 0.160 inches · 80 to 400 micro-hours 0 · 1 0 0 inches 0.300 inches 0.500 inches 400 micro-inch and 0.300 inches 0.900 inches · 1.600 inches to more than 400 The micro-inch roughness average is measured by a profilometer (pr〇m〇m eter ) or by a scanning electron microscope, wherein the profilometer moves a needle ' on the surface 306 to create the surface 306 A highly undulating pattern of rough conditions, while a scanning electron microscope uses an electron beam reflected by the surface 3〇6 to produce an image of the surface 306. Surface 3〇6 of ceramic body 302, once subjected to bead blasting, surface 3〇6 may be further treated by a second processing step, such as immersion or dipping. The treatment solution contains a treatment agent which removes impurities on the surface 3〇6 or the loose grains formed by the cleaning surface 306 during the bead strike to prepare a surface 306 that can bond with the coating 304. The treatment step of surface 3〇6 is immersed in the solution for a suitable period of time to prepare the surface 3〇6, such as for a period of from about 15 seconds to about 30 minutes, even from about 15 seconds to about 15 minutes. After treatment with the treatment solution, it was found that the coating 304 had a good adhesion to 1290341, and the sputum contained a low angle solution containing a sufficient amount of the treatment agent which was unpredictable, such as IX. Conventional processes are often used - higher intensive preparation of surface 3〇6 and two::! The percentage of hydrofluoric acid will be better cleaned by the treatment agent for cleaning and surface nn. = However, it is better to use a treatment solution having a treatment with a sufficiently low degree of humidity: the main particle Any residue or weak bond crystallization on the θ π does not form or exacerbate micro defects on the surface 306 of the assembly 300. Compared with the conventional treatment process of the treatment solution phase of the 铋-low/min period treatment agent and the two-concentration treatment agent, the coating layer 3 is further improved because the damage of the grain boundary region caused by the engraving is reduced. The bond between 〇4 and the ceramic body 3〇2. In an example, the ceramic body 302 is immersed in a "raw treatment solution" containing a suitably low concentration of one acid; a green agent, wherein the acidic agent comprises hydrofluoric acid (Bp). Example ^ The treatment solution may comprise a primary HF The treatment agent. The nitrogen sulphuric acid system provides a good cleaning of the surface φ 3 〇 6 , which has the ability to remove impurities and loose particles on the surface ruthenium, wherein the granules are formed, for example, during the bead blasting or substrate 16 process. The hydrofluoric acid may also react with and decompose the impurities accumulated on the surface 3〇6 of the ceramic body 302, such as Si〇2, Ca〇 or Mg〇. The appropriate low concentration of hydrofluoric acid may be If less than about 10 volume percent, the mouth is about 1 to 1 volume percent, even less than about 5 volume percent. In another example, the ceramic body 302 is immersed in a solution containing a suitably low concentration of one. Non-fluorinated acidic treatment agent. The non-fluorinated acidic agent is 12 1290341 for the treatment of ruthenium to allow cleaning and preparation of the surface S in the case of reducing the growth of micro-cracks in the surface 306 and reducing the damage of the grain boundary region. Suitable The cleaning agent comprises, for example, HC1 or HN〇3. A suitable low concentration of the non-fluorinating agent may be less than about 2% by volume, such as a concentration ranging from about 1 to 20 volume percent, or even less than about 丨〇 volume percent. In another example, the ceramic system is immersed in an assay solution, such as a KOH solution, or an organic etchant solution, such as diethylene glycol monobutyl ether. 2 immersed in the solution for treatment, forming a metal coating 3 〇4 in at least a portion of the ceramic body 032. In the substrate processing chamber 36a, the coating 3 〇 4 contains one or more of substantial corrosion resistance a metal such as one or more of aluminum, titanium, copper and chromium, etc. The metal coating 3〇4 is formed to protect the ceramic body 302 from corrosion, wherein the coating 3〇4 can be obtained by the following method The formation is formed, for example, by the excitation gas in the processing chamber 36a, and is formed by a strong bonding between the metal coating 304 and the ceramic body 302. For example, the coating 304 can also be formed by a Or a variety of chemical or physical deposition processes For coating, or by flame spraying or thermal spraying, such as twin wire arc method, plasma arc nozzle coating method, or oxy-fuel gas flame spraying In the process chamber 36 &, the thickness of the metal coating 304 suitable for reducing corrosion is, for example, at least 〇〇5 mm, or even less than about 〇·5 mm. In one example, the metal coating system It is applied to the treated surface by a twin-wire arc thermal spraying process, as issued on May 8, 2001 to Lazara et al., US Patent No. 6,227,435 B1 and December 9, 1997. 1290341

Scruggs is described in U.S. Patent No. 5,695,825, the entire disclosure of which is incorporated herein by reference. In a twin wire arc thermal spray process, a thermal sprayer (not shown) contains two consumable electrodes that are shaped and angled to create an arc therebetween. For example, the consumable electrode comprises a double filament formed by a metal coated to the surface 306, and the electrodes form an angle with each other to form a discharge at a point closest to each other. When a voltage is applied between the consumable electrodes and a carrier gas flows between the electrodes, an arc discharge is generated between the two consumable electrodes, wherein one or more of the carrier gases such as air, nitrogen or argon. The arc generated between the electrodes will atomize and at least partially liquefy the metal on the electrode, and the carrier gas excited by the arc electrode will cause the melted particles to push out of the thermal sprayer' and toward the treated surface 306 of the ceramic body 302. . The melted particles impinge on the surface 306 of the ceramic body 302 and are cooled and condensed on the surface 306 to form a coating 304. When the twin filaments become old, the filaments can be continuously supplied into the nozzle applicator to continuously supply the metal material. During thermal spraying, suitable operating parameters are selected to properly tailor the characteristics of the coating material, such as when the coating material traverses the temperature and velocity of the path from the thermal sprayer to the ceramic body surface 306. For example, such as gas flow rate, rate level, powder supply rate, carrier gas flow rate, distance between the thermal sprayer and the surface (stan (j0ff distance), and deposition angle of the coating material relative to the surface 3〇6, These parameters are suitable to improve the coating of the coating material and the subsequent adhesion of the coating 304 to the surface 3 〇 6. For example, the voltage between the consumable electrodes is selected to be between about 丨〇 volt to about 5 volts, such as about $ volts ^ In addition, the current flowing between the consumable electrodes can be selected to be between about 14 1290341 ^ ^ amps to about loop amps, such as about 3 amps. Plasma torch ( The power layer of the plasma torch is usually from about ό to about 瓦. The separation distance and the deposition angle are selected to adjust the deposition characteristics of the coating material on the surface. For example, the separation distance and the deposition angle are adjusted, and The pattern of the melted coating material splashed against the surface 306 can be modified to form a pattern like "pancake" and "thin plate." The distance and deposition angle can also be adjusted to modify the phase of the coating material impact surface 306. , Degree, or droplet size. In one embodiment, the distance between the thermal sprayer and the surface is greater than about 5 inches, and the coating material is deposited at the surface at an angle of about 9 degrees. The speed is adjusted to properly deposit the coating material on the surface 306. In one embodiment, the powder coating material is at a speed of from about 100 to about 300 meters per second. In addition, a thermal sprayer is also employed. The temperature at which the coating material impacts the surface 306 is at least about the melting temperature. Temperatures above the melting point produce a coating having a high density and high bonding strength. For example, the temperature of the excited carrier gas around the discharge. It may exceed 5 〇〇〇〇 c. However, the temperature of the excited carrier gas around the discharge may also be set such that the coating material maintains a sufficiently low temperature of the melted state for a period of time after the impact surface 306. For example, a section A suitable time is at least about several seconds. One of the components 3 is treated and coated according to the process of the present invention, which is found to substantially improve the bonding between the metal coating 304 and its underlying ceramic body 3〇2. In terms of In a sputtering deposition processing chamber 3 6 a, the processed and coated component 3 根据 according to the process of the present invention has an improved performance, wherein the splash-bonding material formed in the processing chamber 36a can accumulate in The assembly 3 129 129 129 129 034 129 129 129 129 129 129 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 308 For use in the coated assembly 36a of the chamber 36a. For example, to fabricate the assembly 300, the ceramic body 302 can be prepared from a mixture of ceramic powder and a binder, wherein the binder can be an organic bonding material. In a mold, the ceramic powder and the binder are molded into a suitable ceramic body preform (pref〇rm) by, for example, slip casting, or by violent pressurization and equalization. Pressurized, or formed by tapecasting. For example, in one example, the ceramic powder and binder are shaped to be in the form of a deposition ring or cover ring for use in deposition processing chamber 36a. Thereafter, the molded preform is sintered to harden the ceramic material containing the ceramic body 3〇2. Suitable connectors or other structures can be formed into the formed preform prior to sintering. The sintered ceramic body 302 can also be formed by grinding according to the desired thickness, and other structures can be drilled or machined into the porous ceramic material. Once the ceramic body 302 is formed into a desired shape, the above treatment process can be performed by treating the surface of the ceramic body 3〇2 by bead blasting and immersing in a solution to prepare a ceramic enamel for bonding with the metal coating 3〇4. The surface of the body 3〇2 is 3〇6. Next, the metal coating 304 is formed by thermally spraying a metal material onto the surface 3〇6. In another example, a processing and coating process is performed to re-polish the components 3 that have been used in the substrate processing to 36a, for example, for damaged components exposed to the excitation gas in the processing chamber 36 & 3〇〇, apply the re-polishing step. In this example, the assembly 300 comprises a ceramic n 3〇2 and a damaged metal coating 3〇4, the 16 1290341 is removed from the metal coating 304, and the surface 3〇6 of the lower layer is treated and coated to allow assembly 300 is reground (for example, by a beading process as described above, or by another metal removal process, such as an etching process). The metal coating 3〇4 — after the soil fijsL "is is removed, the lower surface 306 is subjected to a process according to the invention, which is beaded and immersed in a treatment solution. Finally, surface 306 is again coated with metal coating 302 as by a thermal coating process. Figure 2 is a flow chart illustrating the processing and coating process disclosed in accordance with the present invention. As shown in the flow chart, the process generally comprises the steps of: (b) beating a component 300 to provide a surface roughness having an average roughness of less than about 5 〇 〇; (ii) immersing the ceramic body in a In solution, the solution has a concentration low enough to reduce etching of the grain boundary regions of the ceramic body; and (iii) forming a metal coating applied to at least a portion of the ceramic body. The treated and coated assembly 300 can be used in the process chamber 36a, wherein as shown in Fig. 3, the process chamber 36a is part of the multiple process chamber platform 1〇0. The multi-chamber platform 100, for example, is a commercially available "ENDURA" system available from Applied Materials, Santa Clara, California. The particular embodiment of the platform 100 shown herein is suitable for use in the fabrication of a planar germanium wafer substrate 16, which is merely illustrative of the invention, but should not limit the scope of the invention. The multiple processing chamber platform 1 generally includes: a cluster of interconnected processing chambers 36a-d, 114, 1 2, 118; and a substrate transport member including a robotic arm assembly 132 for The substrate 16 is transferred between the processing chambers 36 ad, 114, 102, and 118. The robot arm device 132 includes a mechanical arm having a blade 134 for supporting a 17 1290341 plate 16 ^ loading lock ^ ^ 12 (), 122 system receiving includes a gas processing chamber ~ 177 ^ ' ^ ~ ^ positioning substrate 16 is pre-programmed into the process and the gas in the substrate 16 is removed to remove the > dyeable material of the substrate 16 from the high vacuum environment of the process chambers 36a-d. A pre-cleaning chamber U4 is used to clean the substrate 16 in any deposition step, and a cooling chamber 丨〇 2 is used to cool the substrate 16. A process program device 136 is used to control the robot arm device 132. The following command executes a program to cause the robot arm device 132 to transport the substrate 16 between the process chambers 36a-d, ii4, i2, and 118. In general, the process program device 136 controls the robot arm device 132 to take out the substrate 16 from one of the load lock processing chambers 12, 122, and then transfer it to the positioning and degassing processing chamber us, and then sequentially The transfer to the one of the pre-cleaning process chamber 114 and the process chambers 36a-d is completed and then transferred to the cooling process chamber 1〇2. As shown in FIG. 4, the multiple processing chamber platform 1A has at least one pvD processing chamber 36a for sputtering a layer on the substrate 16, wherein the layer is one of a button, a tantalum nitride or a copper. More. In the PVD processing chamber 36 &, the substrate support 18 is used to support the substrate 16. The substrate 16 is introduced into the processing chamber 36a via a substrate loading port (not shown) in the side wall 45 of the processing chamber 36a, and is placed on the support member 18. During the transfer of the substrate 丨6 into and out of the processing chamber 36a, the support member 18 is raised or lowered by a support lifting bellows (not shown) and a lifting finger assembly (also not shown). It is used to raise and lower the substrate 16 to place the substrate 16 on the support 18. The support member 18 includes one or more rings for covering at least the support member 8 18 1290341 pieces of money, wherein the ring such as the deposition ring __& the ring 17 is covered by the support member! 8 上静儿% 15 and covering at least a portion of the electrostatic chuck on the S (not::) to reduce the exposure of the electrostatic chuck to the excitation gas in the treatment ” ... reduces the probability of particles depositing on the electrostatic chuck. In one example, the deposition % 15 at least partially surrounds the substrate 16 to protect portions of the support 8 that are not covered by the substrate 16. The cover ring 17 surrounds at least a portion of the deposition ring 15 and assists in reducing particle deposition on the deposition ring 15 In addition to the underlying support, in accordance with one aspect of the present invention, the deposition ring 15 and the cover tether can be treated and coated in accordance with the process of the present invention. A metal bond with a strong bond is provided in accordance with the present process. 304, the deposition ring 15 and the cover ring 17 are accommodated in a larger amount of deposits without excessive thermal expansion stress or delamination of the coating 304. Therefore, the deposition ring 15 treated and coated according to the present process is The cover ring 17 can enhance its corrosion resistance and provide better corrosion protection for the lower substrate support 18. A mine gas supply 23 introduces a gas plating gas into the processing chamber to make the gas Maintained in a process area Under sub atmospheric pressure, the sputtering gas is introduced into the processing chamber 36a via a gas inlet 33, wherein the gas inlets 33 are each connected to one or more gas sources 24, 27 via gas inputs 25a, 25b. One or more mass flow controllers 26 are used to control the flow rate of the individual gases, and the individual gases may be pre-mixed in the mixing manifold 31 before being introduced into the processing chamber 36a, or may be separately introduced into the processing chamber 36a. The sputtering gas generally contains a non-reactive gas, such as argon or gas. When the gas is excited to form an electropolymer, it will energetically collide with the 19 1290341 group, or the nitride button, etc. "sputtering out such as copper enamel. Sputtering gas also contains one and one ~7 Γ~-- reactive gas, such as nitrogen. Similarly, those skilled in the art can understand, I, drag μ ^ ώ other The composition of the money recording gas also contains other reactive gases or other forms of non-reactive gas. Bayi Emissions System 2 8 Series _ Decoration & 丄 丄 制 处理 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 36 The helmet feet in the room 36a Gas and by-product gas of γ 1. In the processing chamber 36a, the discharge system 28 includes a nickname, a venting port 29, which is connected to a row leading to one or more exhaust pumps.翁瞢瞢虱吕线34 〇 is in the exhaust line 34 and has a flow 37' which is used to control the gas core in the processing chamber. In the processing chamber, the pressure of the deplating gas is generally set at The degree of subatmospheric pressure, such as about 2 to 1 〇 mT 〇rr (亳托) PVD treatment to 36a, further includes - splashing dry material 14, wherein the dry material is coated with 3 titanium and faces the substrate 16. A quasi-collimator (not in the figure) can be placed between the number 14 and the substrate support gingival on demand. The PVD processing chamber 36a may also have a shield 20 to protect the process chambers α Α to "a wall 12 from attack by sputtering materials, and in general, the shield η may also serve as an anode ground plane. The shield is electrically floating. Or grounding. The target 14 is electrically insulated from the processing chamber 3 by the Shield 20, and is connected to a voltage source, but the voltage source can be in other forms, such as an RF power supply in an example. Medium, DC power supply 22, target

14. The shield 20 is regarded as a gas-exciting crying H. The scaffold is activated to steal 90, and the exciter 9f) can excite (10) the gas into a plasma to the money material. Add power η. For the shield 20, a DC lightning pressure f, such as Dr., and a phase voltage (e.g., DC voltage pulse), are applied to the dry conductor 14. In the process chamber 36a, a voltage is applied to the sputter target η to produce a U-system that excites the quenched t body to form a 20 1290341 plasma that is self-drying material i4 $贱 mineral material. The material sputtered from the target via the plasma is deposited on the substrate 丨6, which reacts with the electropolymerized gas composition to form a deposited layer on the substrate 16. The processing chamber 36a further includes a magnetron 32 having a magnetic field generator 35 that generates a magnetic field 105 near the dry material 14 of the processing chamber 36a to increase the high density plasma region adjacent to the target 14. The ion male and the genus in 38 are used to improve the money mine of dry materials. In addition, a modified magnetron 32 can be used to allow for sustained self-sputtering of copper or splashing of titanium, titanium, or other metallic materials, and can simultaneously reduce the use of bombardment targets. The demand for a non-reactive gas is the same as that granted to Fu, and the patent name is "Rotating Sputtered Magnetron Assembly", US Patent No. 6,183,614, and issued to Gopairaja et al. The U.S. Patent No. 6,2,74,008, the entire disclosure of which is incorporated herein by reference. The magnetic field 105 extends through the substantially non-magnetic target 14 into the vacuum processing chamber 36a. In one example, magnetron 32 produces a semi-toroidal magnetic field on target 14. In one embodiment, the magnetron 32 extends horizontally from the center point of the adjacent material 14 to the edge of the available area of the target 14. In one example, magnetron 32 includes a motor 1〇6 for rotating magnetron 32 around rotating shaft 78. The motor 1〇6 is typically applied to the magnetic yoke 98 of the magnetron 32 by the shaft IQ*, wherein the face 1〇4 extends along the axis of rotation 78. The PVD process of the present invention uses a computer program product i4i to execute the computer program. 141 includes a process program device 136, and is shown in the control 21 1290341 5, where the controller 30 includes - in a system with a peripheral component (CPU) 'for example, commercially available from Synergy Microsystems, Calif〇rnia Available 684〇0 microprocessor. This computer code can be written in any traditional computer readable programming language, such as a combination language, c, c++, ^ Pascal. The appropriate code is entered in a single-- or multiple-slot case using a traditional paper editor and stored or built-in. The computer can use the media: the computer's memory system. If the input code text is a higher-level language, the code will be edited #, and the compiled program will be linked to the object code of the pre-compiled window library routine. In order to execute the linked zero-coded code, the system user needs to execute the object code so that the computer system loads the message into the memory, and the CPU reads and executes the code from the memory: The task defined. The user enters the process settings and the process chamber number into a process selector code 142. The system is used to process the array process parameters for the special process chamber. The Shimin system < ▲ & liver re-identification is the predetermined setting number. The process parameters are related to the process conditions. The I-process conditions of the iodine image such as process gas composition first-rate rate, ▲ degree, pressure, gas excitation system DC Φ ^ ^ ^ diameter element (such as non-pulse or DC power supply level with pulse balance) And the temperature of the magnetic field treatment chamber wall. The sheep "and", the cold part of the gas, and the private program device 130 contain ··· accepting m 149 ^ ^ mourning and from the process selector program

, and the identified process chamber 36 and the number of fine code A code · You Tian recognized ~ & and array process parameters, and used to control each process chamber 36 & Work. Several users, several process setting numbers and process processing rooms to 5 tiger codes, or one user 22 1290341 _ can input multiple 1-way setting numbers ^ and process bank first-order devices to make the system 1 36 better The ground contains a process selected by κ. The process program, >& horse, operates in the chambers 36a-d to determine the processing chamber. The following steps are performed. (1) The monitoring station g determines which system is to be processed in the processing chambers 36a-d. In use, (1) the desired process is based on a specific process; and the execution of the desired process is performed. It is also possible to use the traditional type of process to be polled... Uing). When the process room 36 is scheduled to be "processed", for example: the system is designed to take into account the number of processes used, the process program is loaded... The difference between the conditions of the desired process conditions: the current condition Each of the specific differences between the type and the demanding requirements is as follows: "1 is the current designer, and the system is required to determine the age," or - the system is required to be characterized. What is the other weight: the process program device 136 decides to continue to use The process processing room and the system to the fourth job (four) to send the special U program refers to setting the parameter i official program code 14 " to execute the process setting, the system code 144 is determined according to the process setting determined by the program device 136, Suppress: a plurality of process tasks in the process chamber 36. For example, the j to S program program 144 includes a code for controlling the PVD process operation in the described process process to 36a. The process room manager program Shima 14 also controls the execution of code or code modules of the various process room components that control the operation of the process chamber 300 for performing the selected process settings. The example of the processing room component code is: · a substrate fixed 1 1 4 5, air flow control code] 4 6, emission control code ^ * 7, 23 1290341 control code 1 48, and voltage source control program Code 1 49. For those skilled in the art, it will be apparent to those skilled in the art that, depending on the process to be executed by the process chamber 36a, other process control code codes may be included. In operation, the process room manager code 1 44 selectively schedules or calls the process component code based on the custom program settings being executed. The processing room manager code 1 44 sets the custom component code, which is similar to the processing device code to execute the processing chambers 36a-d and process settings. The processing room manager code 丨44 generally includes the following steps: monitoring each

a process chamber component 300; determining a component to be operated 300 based on process parameters to be executed by the process; and executing a process component code corresponding to the monitoring and decision step. The operation of a particular process room component code will now be described. The substrate positioning code 145 includes code for controlling the process chamber assembly 3, wherein the assembly 300 is used to transport a substrate 16 onto the substrate support 18, and optionally the substrate is disposed in the processing chamber 36. 1 6 liters are lifted to the desired height to control the distance between the substrate 16 and the target. When the substrate 16 is transferred into the processing chamber, the substrate support 18 is lowered to receive the substrate 16, and then the support member 上升 rises to the desired height in the processing chamber 36a. The substrate positioning code 145 controls the displacement of the support member 18 in response to process setting parameters from the process chamber manager code 44 regarding the height of the support member. Airflow code 146 is used to control process composition and flow rate. The gas conduit 34, which is typically used for each process, includes a safety shut-off valve (not shown) that automatically or manually shuts down the process gas flow into the process chamber 36a. When a toxic gas is used in the process, the "death" phase is located on each of the gas conduits 34. The airflow code 1 4 6 controls the on/off state of the safety shutdown threshold and causes the mass flow controller to accelerate/decelerate at the flow rate. The airflow code 1 46, like all of the process room component code, is executed by the process room manager code 144 and is processed by the process manager code 14 14 for process parameters relating to the desired gas flow rate. The operation of the airflow code 1 4 6 is generally adjusted by repeatedly reading the necessary mass flow controller, comparing the read value with the desired flow rate received to the manager code 144, and then adjusting as needed. Flow rate. In addition, the airflow code 146 includes steps to monitor an unsafe airflow rate and initiate a safety shut-off valve when an unsafe condition is detected. In one example, the airflow code 146 operates the mass flow controller to control the airflow rate to provide a gas plating gas, wherein the sputtering gas has an oxygen-containing gas relative to argon for a first period of time The first first volumetric flow rate ratio is proportional to the second volumetric flow rate of the oxygen-containing gas relative to the argon gas over a second period of time. When the emission control code 1 4 7 is executed, the processing chamber manager code 1 44 receives a desired pressure level as a parameter. The emission control code 147 measures the pressure in the processing chamber 3 6 a by reading one or more conventional pressure gauges (not shown) connected to the processing chamber 36a, and compares the measured values with the dry materials. The pressure 'and the pID value (proportional 'integral, and differential') is obtained from an existing pressure gauge corresponding to the target pressure, and the throttle valve 37 of the discharge system 28 is adjusted based on the PID value obtained from the pressure gauge. Alternatively, the opening size of the throttle valve 37 of the exhaust line 34 of the exhaust system 28 can be adjusted to adjust the pressure in the process chamber 36a. The Selective Heater Control Code 1 48 series contains code for controlling the temperature of the heating substrate 25 1290341 in the selection plus one. Heater control code ~--__ 厌私山' by measuring the electric 1 output of a thermocouple located in the support member 18 to measure Jin, tian itch '胤, w compare temperature and set temperature The difference is to increase or decrease the current applied to the coronation, and then to obtain the desired rate of rise or fall or the temperature of the sigh. Continued, Tian Tian rape, β μ degree can be checked by the corresponding temperature stored in the conversion table, 3 II is determined by the measured pressure using the fourth-order multi-style light-shell type. When the lamp is used as the heater, the heater control code 148 gradually controls the temperature of the lamp to increase or decrease the current of the lamp to increase the life and reliability of the lamp. This, ° 匕 3 embedded fail-safe mode to detect process safety compliance and rich processing room 36a has not been picked up and pulled j. ^ 4. He Zhou Tian δ again, can be used to turn off the heater Work. The voltage source code 149 contains a program for controlling the source of the battery to excite the strontium gas in the chamber, 36 volts to depress the material from the dry material 14, and a voltage source such as a DC voltage source. For example, the deduction, the code 149 sets the pulse Dc voltage level of the application and the coffin 14, and also the side wall is treated to the electrical state of the temperature of 36 a. Similar to the previously described t θ > π m , ^ . The processing room component program code 1 4 9 is executed by the processing room manager program in a mad eight code 144. In the case of the code 149, the step 149 includes the reading of the "power applied to the target 14" and the "s M c" power flowing through the processing chamber 36a. Excessive reading power reading means that the plasma is not ignited. This new door H will restart or close the process at 149. The read power level is compared to the light pumping &', and the level is adjusted to control the plasma. 26 1290341 - Reinforced gold----in this example, in accordance with the present invention, a ceramic body 302 comprising alumina is treated and coated with an aluminum-containing Metal coating 304. In a first processing step, the surface of the alumina ceramic body 302 is beaded to form a surface having a roughness of 100 micro-pairs. In the second treatment step, the surface of the oxidized chain Tauman 3 02 was continued for one minute and immersed in a hydrochloric acid solution having a concentration of 5 volume percent. The aluminum metal coating 3〇4 was applied to the treated surface 306 by a two-wire thermal spraying method in which the double aluminum wire system was used as a consumable electrode. The aluminum material was sprayed onto the surface 3〇6 to form a coating 3〇4 having a thickness of 25 mm. The bonding strength between the aluminum metal coating 304 and the alumina ceramic body 3〇2 is judged to be compared with the bonding strength of the assembly 3 prepared by the conventional process. Wherein the bond strength is determined according to the ASTM C633 test standard. In the ASTM test standard, the surface 3〇8 of the metal coating 3〇4 is attached to a fixture (Hxture) with an adhesive. By means of the fixture, a tensile load is applied vertically to the plane of the coating 304 to determine the bonding strength of the coating. The degree of adhesion or adhesion strength is determined according to the following equation: 1 ^ Adhesion or bond strength = maximum load / cross-sectional area Figure 6 is a comparison of the bond strength of the AE component, wherein the component labeled E is represented by the present invention. The method is to treat the standardized bond strength of the coated component 3, and the component labeled A_D represents the bond strength of the component 300 treated and coated by conventional methods. As shown in the figure, the process provides an assembly 300 that is bonded to the ceramic body 3〇2 1290341 at a coating 3〇4. The figure i also shows that the bonding strength of the component D is lower than that of the process c, and the bonding strength is lower than one and a half of the bonding strength of the component Ε. The measured bond strength can also be used to estimate the component life of the component 300, which is defined as the need to remove or re-polish the group #3001, which can process the number of substrates 16 in the process chamber 36a to further confirm the process according to the process. The enhanced performance of the coated assembly 300 is treated. Components A and B are estimated to have a component life of approximately 3 基板 substrate, component c is estimated to have a component life of 2 〇〇〇 45 substrates, and component D is estimated to have a process of 52 〇〇 _65 〇〇 The life of the components of a wafer. In contrast, component E prepared in this process is estimated to have a substantially increased component lifetime for processing at least about 7,500 wafers. Therefore, the assembly 3〇〇 prepared by treating the surface 3′6 of the ceramic body through the process enhances the bonding of the metal coating 304 and the surface 3〇6, thereby enhancing the bonding strength between the metal coating and the ceramic body, and The probability of delamination or peeling on the metal coated porcelain 302 in the assembly 3〇〇 is reduced. The assembly 300 is treated by the present invention to improve the corrosion resistance of the substrate process environment and extend the life of the component, thereby increasing the efficiency and quality of the substrate 16. Although the present invention has been disclosed in the foregoing preferred embodiments, other embodiments of the invention may be made without departing from the spirit and scope of the invention. For example, other treatment agents may be substituted for the examples described. Likewise, as is well known to those skilled in the art, the ceramic, 302 and metal coated 3〇4 series may comprise other alternative compositions. Furthermore, reference is made to the positional relationship of the preferred embodiment shown in the figures of the present invention, which may be lower, upper, lower, top, upward, downward, first and second and other related bits 28 1290341 and this The relationship can be ^, followed by the application | from the configuration. He shakes, or space L garden type to illustrate the only limited combination, Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 is a brief description] The following description, attached patent application scope And the examples of the present invention are made to make the features, viewpoints and advantages of the present invention. However, it is generally possible to use each of the features in the present invention, volume = easy to be specific in the text herein. The present invention also includes such features:: where: 仕忍 is a cross section of a process chamber component having a metal coating Side view. A process flow diagram in accordance with an embodiment of the present invention. A cross-sectional upper view of an embodiment of the device, wherein the device is packaged -

A multi-processing chamber platform that includes interconnected PVD processing chambers. A side view of a wear side of an embodiment of a preferred processing chamber. A simplified block diagram of a hierarchical control architecture for a computer program embodiment, wherein the computer program has the ability to operate Figure 4 - Processing Room. A - histogram compares the bond strength of a metal coating on a component manufactured in a different process. [Simple description of component symbol] 12 (processing room surrounding) wall 13 top plate 29 1290341 14 target 15 deposition ring 16 substrate 17 cover ring 18 support 19 surface 20 shield 22 power supply 23 gas supply 24 gas source 25a, b gas input 26 mass flow controller 27 gas source 28 (gas) exhaust system 29 exhaust port 30 controller 31 mixing manifold 32 magnetron 33 gas inlet 34 exhaust line / gas conduit 3 5 magnetic field generator 36a (PVD) processing chamber 36b processing chamber 36c processing chamber 1209034 36d processing chamber 3 7 throttle valve 38 plasma region 39 gas disperser 45 side wall 78 rotating shaft 90 gas energizer 98 magnetic yoke 100 platform 102 cooling processing chamber 104 shaft 105 magnetic field 106 motor 11 4 pre-cleaning processing chamber 11 degassing processing chamber 120 loading locking processing chamber 122 loading locking processing chamber 126 conveying 匣 132 robot arm device 134 blade 136 (process) program device 1 41 computer program product 142~149 code 3 00 component 1129034 302 ceramic body 304 coating 306 surface 308 surface

Claims (1)

1290341 +, the scope of application for patents: order ·; all of the original disc .......... 1 · A method of manufacturing a component used in a process chamber, the assembly comprising at least a plurality of grains a ceramic body with a grain boundary region' and the method comprises at least the following steps: (a) beating the component to provide a surface having an average roughness of less than 150 micrometers; (b) immersing the component In a solution, the solution has a sufficiently low concentration of acid to reduce etching of the grain boundary regions of the ceramic body; and (c) forming a metal coating on at least a portion of the ceramic body. φ 2. The method of claim 1, wherein the method of at least (a) is followed by the step (b). 3. The method of claim 1, wherein the solution comprises at least a concentration of less than about 1 volume percent of hydrofluoric acid (HF). 4. The method of claim 3, wherein the solution is substantially composed of hydrofluoric acid. 5. The method of claim 1, wherein the solution comprises - or more of KOH, HCl or HN〇3 at a concentration of less than about 20 volume percent. 6. The method of claim 1, wherein the solution comprises 33 1290341 in a concentration of less than about 20 volume percent of diethylene glycol monobutyl ether. 7. The method of claim 2, wherein the terracotta system comprises alumina and the metal coating comprises aluminum. 8. The method of claim 2, wherein the component is a deposition ring or a cover ring. A process chamber assembly formed by the method of claim 2, the assembly comprising at least one exposed surface that allows a sputter material to be formed in a sputtering process chamber A thickness of at least about 〇2 mm is accumulated on the surface, but does not cause the metal coating underneath to peel off from the ceramic body. 10. A method of making an assembly for use in a process chamber, the assembly comprising at least a ceramic body having a plurality of alumina grains and grain boundary regions, and the method comprises at least the following steps: (a) The bead is struck to provide a surface roughness having an average value of less than 〇5〇 micro-inch; (b) sinking the component in a solution containing a concentration below about i之一 volume percent of hydrofluoric acid (HF), hydrochloric acid (HC1) and nitric acid (ηΝ03) one or more; and (C) by a twin-wire spraying process at 34 1290341 An aluminum coating U is formed on at least a portion of the assembly. Step (b) is performed as in the scope of the patent application. The method of claim 10, comprising at least the method of (a) step green & as claimed in claim 1G, wherein the solute is comprised of hydrofluoric acid. 13. A process chamber assembly formed by the method of claim 1 , the assembly comprising at least one exposed surface that allows a sputter material to be formed in a sputter processing chamber A thickness of at least about mm is accumulated on the surface without causing the underlying aluminum coating to peel off the ceramic body. 14. A method of forming an assembly for use in a process chamber, the assembly comprising at least one ceramic body having a plurality of alumina grains and grain boundary regions, and the method comprising at least the following steps: (a) beading a component to provide a surface having a roughness average of less than 15 〇 英 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千One or more of potassium (K〇H) or diethylene glycol monobutyl (meth) ether; and (c) forming a coating on at least a portion of the ceramic body by a two-wire thermal spraying process. 35 1290341 1 5. The method of claim 14, wherein at least step (a) is followed by step (b). 1 6. A process chamber assembly formed by the method of claim 14, wherein the assembly includes at least one exposed surface that allows for one of the gold plating formed in a splash-bond processing chamber The material accumulates at least about 0.2 mm on the surface without causing the underlying aluminum coating from the ceramic body 36 1290341 VII. Designated representative map: (1) The representative representative of the case is: Figure 1. (2) The representative symbol of the representative figure is a simple description: 300 component 302 Ceramic body 304 Coating 306 Surface 308 surface When the cable is used, please reveal the most obvious invention: The chemical formula: