1290162 % 九、發明說明： • · 【發明所屬之技術領域】 本發明係關於一種液狀或糊狀之連接材料，用以對軟 性或硬性配線基板連接IC晶片等之各種電子零件。 ^ 【先前技術】 . 以往，為了將電子零件（例如1C晶片）覆晶組裝於配線 基板上，所採用之封裝法廣為使用者為基板上晶片法（COB 法）或薄膜上晶片法（C0F法），此時，通常係使用異向性導 ♦電接著膜來進行異向性導電連接，而基於材料成本或設備 成本之降低與單位生產時間之縮短的目的，乃取代異向性 導電接著膜而改用液狀或糊狀之異向性導電接著劑或非導 電性接著劑等之連接材料。 在以往一般之液狀或糊狀之連接材料方面，係使用·· 於熱硬化型環氧樹脂與潛伏性硬化劑所構成之熱硬化性成 分中，使得用以對連接材料之線膨脹係數、吸濕率進行調 整之非導電性填料、用以在熱硬化性成分與非導電性填料 春之間做A良好之結合狀態的#合劑以及視情況添加之異向 性導電連接用導電粒子做均勻分散者（日本專利文獻丨）。 另一方面，最近，對於使用液狀或糊狀之連接材料以 COF法或COB法所形成之覆晶組裝體係要求更高之連接可 靠性。特別是，採用COB法的情況下，係需要達到 JEDEC(Joint Electron Device Engineering Council)規格之等 級3或等級2A之耐吸濕熔焊性。 [曰本專利文獻1]特開2000-80341 1290162 【發明内容】 決之琿韻 但疋，知用液狀或糊狀之連接材料的情況下，相較於 用以形成異向性導電接著膜之樹脂組成物，非導電性填料 之配合量的範圍狹窄，無法使用高分子量或高黏度之樹脂 成刀，也不旎使用溶劑，由於存在這些問題，所以配合的 自由度小，也因此要以高可靠性進行連接有其困難。再者， 進仃JEDEC之等級2A❸耐吸濕炼焊試驗的情況，有例如 在IC b曰片與連接材料之間發生浮起的問題。 又，對於液狀或糊狀之連接材料，係要求具備：在常 溫保存中黏度變化少此種良好的保存特性、經pCT(熱壓鍋 测試）試驗後連接電阻不會增加此種良好的耐pCT性。 本發明係用以解決以上以往技術之問題，其目的在於 可對於液狀或糊狀之連接材料以高可靠性進行連接，賦予 優異之保存特性以及即使進行JEDEC之等級2A的吸濕熔 焊試驗的情況也不會發生浮起之良好的耐吸濕熔焊性。 里以解決誤題之手段 本發明者發現··（1)於液狀或糊狀之連接材料中之上述 問題，不僅取決於在1C晶片、配線基板與連接材料中之^ 硬化的熱硬化性成分之間的密合性，同時也相當程度地取 決於以往幾乎未考慮到之非導電性填料表面與已硬化之熱 更化丨生成分之間的也、合性的良窥；（2)當非導電性填料表面 與已硬化之熱硬化性成分之間的密合性不充分的情況下， 在耐吸濕熔焊試驗時容易於該等成分之界面發生龜处 1290162 果連接材料變得容易吸〉、晶.A、& β a 文付谷约及濕，（3)為了解決前述問題，只要於 連接材料中使得對於非導電性埴 电炫異枓之反應性不同的2種矽 烷偶合劑以特定量範圍併用即 丨』，攸而完成了本發明。 亦即，本發明係一種連接鉍4 ^ 逆幾材科，含有熱硬化性成分、 非導電性填料以及石夕燒偶合劑；其特徵在於，該石夕烧偶合 劑係含有f i矽烷偶合劑與第2矽烷偶合劑，該第i矽烷 偶合劑對於非導電性填料之反應性係高於該第2石夕烧偶合 劑對於非導電性填料之反岸性·楚 汉U生，苐1矽烷偶合劑之含量相 對於非導電性填料丨⑽重量份為心〜⑶重量份^夕 烧偶合劑之含#相對於非導電性填料⑽重量份為 0·80〜12.00重量份。 發明效杲 本發明之連接材料雖由液狀或糊狀之連接材料所構 成’但能以高可靠性進行連接’且展現優異之保存特性以 及即使進行腦EC之等級2A的吸祕焊試驗的情況也不 會發生浮起之良好的耐吸濕炼焊性。 【實施方式】 本發明係-種含有熱硬化性成分、非導電性填料以及 石夕烧偶合劑之連接材料；在㈣偶合劑方面係併用對於非 導電性填料之反應性高之第丨魏偶合劑與展現相對低反 應性之第2㈣偶合劑。此處，錢偶合劑對於非導電性 填料之反應性的指標可舉出臨界表面張力。比較相對於相 同基材（例如鈉鈣玻璃基材）之臨界表面張力時，臨界表面張 力愈小則展現愈高反應性。 & 1290162 於本發明中，將反應性不同之2種矽烷偶合劑加以併 用之理由係如下所述。 亦即，在矽烷偶合劑方面若單獨使用相對於非導電性 填料展現高反應性之第1矽烷偶合劑的情況，雖與非導電 性填料之反應性高，但另一方面，待連接之配線基板、lcBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid or paste connecting material for connecting various electronic components such as IC chips to a flexible or rigid wiring substrate. ^ [Prior Art] In the past, in order to flip-chip an electronic component (for example, a 1C wafer) on a wiring substrate, the package method used was generally a wafer-on-substrate method (COB method) or a wafer-on-wafer method (C0F). Method), in this case, an anisotropic conductive connection film is usually used for the anisotropic conductive connection, and the purpose of reducing the material cost or equipment cost and shortening the unit production time is to replace the anisotropic conduction. The film is replaced by a connecting material such as a liquid or paste-like anisotropic conductive adhesive or a non-conductive adhesive. In the conventional liquid or paste-like connecting material, the thermosetting component composed of the thermosetting epoxy resin and the latent curing agent is used to make the linear expansion coefficient of the connecting material. a non-conductive filler whose moisture absorption rate is adjusted, a # mixture which is used for a good bonding state between the thermosetting component and the non-conductive filler spring, and an anisotropic conductive connection-added conductive particle to be uniformly dispersed as the case may be. (Japanese Patent Document 丨). On the other hand, recently, a flip chip assembly system formed by a COF method or a COB method using a liquid or paste connecting material requires higher connection reliability. In particular, in the case of the COB method, it is necessary to achieve the moisture absorption weldability of the grade 3 or grade 2A of the JEDEC (Joint Electron Device Engineering Council) specification. [Patent Document 1] JP-A-2000-80341 1290162 [Disclosed] In the case of a liquid or paste-like connecting material, it is known that an anisotropic conductive adhesive film is formed. The resin composition and the non-conductive filler are in a narrow range, and it is not possible to use a resin having a high molecular weight or a high viscosity to form a knife, and a solvent is not used. Since these problems exist, the degree of freedom of blending is small, and therefore It is difficult to connect with high reliability. Further, in the case of the JEDEC grade 2A ❸ moisture absorption welding test, there is a problem that, for example, floating occurs between the IC b slab and the connecting material. Further, in the case of a liquid or paste-like connecting material, it is required to have such a good storage property that the viscosity change is small during storage at a normal temperature, and the connection resistance does not increase after the pCT (hot press test) test. Resistant to pCT. The present invention is to solve the above problems of the prior art, and the object thereof is to provide high reliability to a liquid or paste connecting material, to impart excellent storage characteristics and to perform a JEDEC grade 2A moisture absorption welding test. In the case of the case, there is no good resistance to moisture absorption weldability due to floating. The present inventors have found that (1) the above problems in a liquid or paste-like connecting material depend not only on the thermosetting property of hardening in a 1C wafer, a wiring substrate, and a connecting material. The adhesion between the components is also based to a considerable extent on the similarity between the surface of the non-conductive filler which has not been considered in the past and the hardened heat generation. (2) When the adhesion between the surface of the non-conductive filler and the hardened thermosetting component is insufficient, it is easy to generate the turtle at the interface of the components during the moisture absorption welding test.吸〉, 晶.A, & β a 付付谷约和湿, (3) In order to solve the above problems, as long as the coupling material makes two kinds of decane couples with different reactivity to non-conductive 埴The present invention has been completed in a specific amount range by using a mixture of the ingredients. That is, the present invention is a ruthenium group containing a thermosetting component, a non-conductive filler, and a sulphur coupling agent; characterized in that the zea siu coupler contains a fi decane coupling agent and The second decane coupling agent, the reactivity of the ith oxane coupling agent to the non-conductive filler is higher than that of the second ceramsite coupling agent for the non-conductive filler, the Chu Han U, the 苐 1 矽The content of the mixture is from 0 to 80 parts by weight relative to the non-conductive filler (10) by weight of the non-conductive filler (10) by weight of the non-conductive filler (10). Advantageous Effects of Invention The connecting material of the present invention is composed of a liquid or paste-like connecting material, but can be joined with high reliability, and exhibits excellent storage characteristics and even a smear test of the brain EC level 2A. In the case of the case, there is no good resistance to moisture absorption and weldability. [Embodiment] The present invention relates to a connecting material containing a thermosetting component, a non-conductive filler, and a sulphur coupling agent, and a coupling agent having a high reactivity with respect to a non-conductive filler in the case of a (4) coupling agent. A mixture and a second (four) coupling agent exhibiting relatively low reactivity. Here, the index of the reactivity of the money coupling agent to the non-conductive filler may be a critical surface tension. When the critical surface tension is compared with respect to the same substrate (e.g., soda lime glass substrate), the smaller the critical surface tension, the higher the reactivity. & 1290162 In the present invention, the reason why two kinds of decane coupling agents having different reactivity are used in combination is as follows. In other words, when the first decane coupling agent exhibiting high reactivity with respect to the non-conductive filler is used alone in the case of the decane coupling agent, the reactivity with the non-conductive filler is high, but on the other hand, the wiring to be connected is used. Substrate, lc
晶片與硬化後之熱硬化性成分的密合性變得不充分，連接 材料之耐PCT性降低；又，在矽烷偶合劑方面若單獨使用 相對於非導電性填料展現低反應性之第2矽烷偶合劑的情 況，雖可無須增加連接材料之黏度即可改善待連接之配線 基板、1C晶片與硬化後之熱硬化性成分之間的密合性，但 非‘包性填料與硬化後之熱硬化性成分之密合性變得不充 分，耐吸濕熔焊性會降低。是以，在本發明中，將對於非 =電性填料反應性互異之第」㈣偶合劑與第2♦燒偶合 J併用，可在硬化後之熱硬化性成分與非導電性填料之間 的密合性以及硬化後之熱硬化性成分與待連接之配線基 反1c晶片之間的密合性上取得平衡。 矽歧偶合劑在連接材料 乃里右過少貝丨丨 :填料與硬化後之熱硬化性成分之交界會發生龜裂:「 ^成導通可靠性降低，若過多則未反應之帛 目^非導電性填料會在連接材料中殘存 性成分之皆处甘。 八曰與熱硬化 黏度二;人：如環氧基)反應而增加連 量相對得困難，是以帛1錢偶合劑之含 佳為〇·2〜重:料100重量份為〇.15〜…重量份、更 1290162 縮水甘油趟單體或寡聚物。 體而吕，可使用油化殼牌公 司“之笑皮客特828(分子量_)、愛皮客特834(分子量 470)、踅皮客特1〇〇1(分子量9 < ) 炎皮各特1002(分子詈 1060)、愛皮客特1055(分子量 里iUU)、愛皮客特 量测）等。該等可單獨使用亦可併用2種以上（刀子 /潛伏性硬化劑方面可使用於眾知之熱 接者劑中所使甩者，可使用例如 "” 成仆μ八1^ , t上系（例如ΗΧ3748，旭化 成化…）、胺系(PN-23,味之素公司） (DCMV99，ACI日本右阡八π、 虱一酏胺糸 ，、日本有限公司）之各潛伏性硬化劑等。 潛伏性硬化劑之使用量相 100 .旦m 聚合性環氧系化合物 100重篁伤較佳為〗〜][〇〇重量份。 於本發明之連接材料中除了上述成分 配合交聯劑、各種橡朦成分 ：了視以 氧化防止劑等。特別0、人均千劑、#度調整劑、 以特別疋，右配合異向性導 子，則連接材料能以汸业斗、上u 饮巾等落粒 』十 ， 或㈣的異向性導電接著劑的来 式來使用故為戶斤希望者。在卜 y 叩立f在此種導電粒子方面可 眾知之導電粒子，例如鎳或金等之金屬粒子、、 脂核心表面以前述全屬来# φ > ’ 、：熱塑性樹 、…… 屬末被覆之複合粒子、將金屬粒子或 稷“立子之表面以絕緣性樹脂薄膜來被覆之粒子等。- 本發明之連接材料，可將熱硬化性成分、非 料、矽烷偶合劑以及满悴 电陵真 、^ 及視^兄添加之其他成分分別進行直* 處理之後以眾知之授拌裝置做均句的混合來製造Γ工 本發明之連接材料，雖隨 比例而不同，不過俜以液狀m 類或重量 、你以液狀或糊狀之形態來使用。 1290162 =用本發明之連接材料的情況，例如可藉由眾知之塗 、將連接材料塗佈於配線基板之連接端子區域，將κ 晶片等之各種電子零件對準後以加熱接合機做加㈣合。 (實施例） # :下，藉由實施例對本發明做更具體的說明。 實施例1〜6以及比較例丨〜6 將表2與表3所示之配合表的各成分分別在魏進行 6〇分鐘之真空脫泡之後，以行星式㈣機（練太郎，τΗ聰γ 公司）做均勻混合來調製連接材料。針對所得之連接材料的 保存女定性如以下說明般做評價。 又，第1石夕院偶合劑對於非導電性填料1〇〇重量份之 含有量[(A)Wtp/相對於填料i⑻卿]、第2㈣偶合劑對於 非導電性填料100 4量份之含有量[(b)卿/相對於填料 lOOwtp]係示於表2與表3。 (保存安定性） 將連接材料放置於室溫一周，當黏度變化對於初期黏 度未滿±20%的情況評價為「良好」，於表2與表3中係記 載為「〇」，當為±20%以上的情況評價為「不良」，於表 2與表3中係記載為r X」。 其次，將所得之連接材料以分配器在c〇B用基板 (FR5、間距，索尼化學公司製造之teg基板）做 2〜5mg左右塗佈，於該塗佈膜上使得形成有鍍金凸塊（尺 寸.60" m見方，〇.2# m高，凸塊間距：1〇〇" m)之ic晶 片（尺寸.6.3mm見方，〇.4mm厚）進行對準，於加熱至8〇 12 1290162 * · °C之載台上利用加熱接合機進行加熱壓合（加熱溫度：230 °C，加熱時間：5秒，壓力：0.59N/凸塊）製作COB連接體。 針對所得之COB連接體，如以下所示般對於耐吸濕熔 焊性與耐PCT性進行評價。所得之結果係示於表2與表3。 (而才吸濕炼焊性） 將所得之COB連接體以JEDEC等級2A之條件（於85 • °C /85%RH放置24小時後，以最高245°C之溫度進行3次熔 焊處理）進行吸濕熔焊處理，進而於121°C、100%RH、 # 202.6kPa之環境氣氛中放置100小時之後，以四端子法洌 定連接電阻值。當最大電阻值為200πιΩ以下的情況評價為 「良好」，於表2與表3中係記載為「〇」，當最大電阻 值超過200mQ的情況評價為「不良」，於表2與表3中係 記載為「X」。 [表2]The adhesion between the wafer and the hardenable thermosetting component is insufficient, and the PCT resistance of the bonding material is lowered. Further, in the case of the decane coupling agent, the second decane exhibiting low reactivity with respect to the non-conductive filler is used alone. In the case of a coupling agent, the adhesion between the wiring substrate to be connected, the 1C wafer and the hardenable thermosetting component can be improved without increasing the viscosity of the bonding material, but the non-encapsulated filler and the heat after hardening The adhesion of the curable component is insufficient, and the moisture absorption weldability is lowered. Therefore, in the present invention, the (4) coupling agent which is different in reactivity with the non-electric filler is used in combination with the 2nd squeezing coupling J, and can be used between the thermosetting component and the non-conductive filler after curing. The adhesion and the thermosetting component after hardening are balanced with the adhesion between the wiring base and the wafer to be connected.矽 偶 偶 在 在 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接The filler will be in the residual component of the connecting material. The viscosity of the gossip and the heat-hardening viscosity 2; the human: such as epoxy group) is relatively difficult to increase the amount of the reaction, and the inclusion of the 帛1 money coupling agent is good. · 2 ~ heavy: 100 parts by weight of the material is 〇.15~... parts by weight, more 1290162 glycidyl hydrazine monomer or oligomer. Body and Lu, you can use the oily Shell company "Laughing Pi Kete 828 (molecular weight _ ), Ai Pi Kete 834 (molecular weight 470), 踅皮客特1〇〇1 (molecular weight 9 <) Yanpi special 1002 (molecular 詈 1060), Ai Pikote 1055 (molecular weight iUU), love skin Guest measurement) and so on. These may be used singly or in combination of two or more kinds (the knife/latent hardener may be used in a known hot-contact agent, and may be used, for example, " (For example, ΗΧ3748, Asahi Kasei Co., Ltd.), amine (PN-23, Ajinomoto Co., Ltd.) (DCMV99, ACI Japan 阡 阡 π, 虱 酏 酏 、,, Japan Co., Ltd.) each latent hardener. The amount of the latent hardener used is 100. The m-type polymerizable epoxy compound 100 is preferably 5% by weight. In addition to the above-mentioned components, the crosslinking agent and various components are used in the connecting material of the present invention. Rubber component: It is considered to be an oxidation preventive agent, etc. Special 0, per capita thousand dose, # degree adjuster, special twist, right fit anisotropic guide, the connecting material can be used in the bucket, on the u drink, etc. The use of the anisotropic conductive adhesive of the "grain" or the (4) is used as a source of hope. In the case of such conductive particles, conductive particles such as nickel or gold are known. The metal particles and the surface of the lipid core are all in the aforementioned genus # φ > ' , : thermoplastic a tree, a composite particle which is finally coated, a particle which coats a metal particle or a surface of a crucible with an insulating resin film, etc. - The connecting material of the present invention can be made of a thermosetting component, a non-material, or a cep The mixture and the other components added by the 悴 悴 、 、, ^ and ^ 兄 brothers are processed directly, and then the mixing materials of the known mixing device are used to make the joining materials of the present invention, although they vary according to the ratio, but俜 is used in the form of liquid m or weight, and it is used in the form of liquid or paste. 1290162 = In the case of using the connecting material of the present invention, for example, the bonding material can be applied to the wiring substrate by a known coating. In the terminal area, various electronic parts such as κ wafers are aligned, and then heated and joined by a bonding machine. (Embodiment) #: Next, the present invention will be more specifically described by way of examples. Examples 1 to 6 and comparison Example 66 The components of the combination table shown in Table 2 and Table 3 were vacuum degassed for 6 minutes in Wei, and then uniformly mixed by a planetary (four) machine (Lantaro, τΗ聪 γ company). connection The content of the obtained connecting material was evaluated as follows. In addition, the content of the first stone court coupling agent for the non-conductive filler 1 part by weight [(A) Wtp / relative to the filler i (8) (2) The amount of the second (four) coupling agent for the non-conductive filler 100 is shown in Tables 2 and 3. (Storage stability) The connecting material is placed in the chamber. In the case of a temperature of one week, when the viscosity change was less than ±20% of the initial viscosity, it was evaluated as "good", and in Tables 2 and 3, it was described as "〇", and when it was ±20% or more, it was evaluated as "poor". In the following Tables 2 and 3, it is described as r X". Next, the obtained connecting material is applied as a dispenser on a substrate for c〇B (FR5, pitch, teg substrate manufactured by Sony Chemical Co., Ltd.) to be coated at about 2 to 5 mg. On the coating film, an ic wafer (size: 6.3 mm square, 尺寸. .4mm thick) for alignment, heating on a stage heated to 8〇12 1290162 * · °C using a heating bonding machine (Heating temperature: 230 ° C, heating time: 5 seconds Pressure: 0.59N / bumps) made COB linker. The obtained COB bonded body was evaluated for moisture absorption weldability and PCT resistance as shown below. The results obtained are shown in Tables 2 and 3. (The moisture-absorbing weldability is obtained.) The obtained COB connector is subjected to JEDEC grade 2A (after 8 hours at 85 ° C / 85% RH, and then welded at a temperature of up to 245 ° C for 3 times) The moisture absorption welding treatment was carried out, and further placed in an ambient atmosphere of 121 ° C, 100% RH, and # 202.6 kPa for 100 hours, and then the connection resistance value was determined by a four-terminal method. When the maximum resistance value is 200 πιΩ or less, it is evaluated as "good", and in Tables 2 and 3, it is described as "〇", and when the maximum resistance value exceeds 200 mQ, it is evaluated as "defective", and in Tables 2 and 3, It is described as "X". [Table 2]
配合表 實施例 成分 1 2 3 4 5 6 (重量份） 環氧測旨” 40 40 40 40 40 40 環氧樹脂 20 20 20 20 20 20 潛伏性硬化劑 40 40 40 40 40 40 非導電性塡料M 40 40 40 40 40 40 第1矽院偶合劑#5 0.30 0.30 0.30 0.10 0.70 0.30 (A)wtp/相對於塡料lOOwtp 0.75 0.75 0.75 0.25 1.75 0.25 第2矽烷偶合劑％ 1.00 0.40 4.50 1.00 1.00 1.00 (B)wtp/相對於塡料lOOwtp 2.50 1.00 11.25 2.50 2.50 2.50 導電粒子 一 — 一 — — 6.00 (評價)保存安定性 〇 〇 〇 〇 〇 〇 耐吸濕熔焊性 〇 〇 〇 〇 〇 〇 耐PCT性 〇 〇 〇 〇 〇 〇 13 1290162 表2與表3之註解 • *1 : HP3748，旭化成化學公司 *2 : EP828，油化殼牌公司 *3 : HX3748，旭化成化學公司 *4 :二氧化矽微粒子，DF5 VLD，龍森公司 *5 :胺變性類型，KBM603，信越化學公司 *6 :未變性類型，KBM403，信越化學公司 * 7 :於粒徑3.5 // m之苯并鳥糞胺樹脂粒子施以Ni/Au Φ 電鍍之導電粒子 [表3] 配合表 比較例 成分 1 2 3 4 5 6 (重量份） 環氧翻旨” 40 40 40 40 40 40 環氧樹脂，2 20 20 20 20 20 20 潛伏性硬化劑3 40 40 40 40 40 40 非導電性塡料1 40 40 40 40 40 40 第1矽院偶合劑” 0.30 0.30 0.05 0.80 0 0.30 (A)wtp/相對於塡料1 OOwtp 0.75 0.75 0.125 2.00 0 0.75 第2矽烷偶合劑％ 0.30 5.00 1.00 1.00 0 1.00 (B)wtp/相對於塡料1 OOwtp 0.75 12.50 2.50 2.50 0 2.50 (評價)保存安定性 〇 〇 〇 X 〇 〇 耐吸濕熔焊性 X 〇 X — X X 耐PCT性 〇 X 〇 一 〇 X (現象） 浮起 空孔 浮起 黏度增加 浮起 浮起Formulation Example Composition 1 2 3 4 5 6 (parts by weight) Epoxy test" 40 40 40 40 40 40 Epoxy 20 20 20 20 20 20 Latent hardener 40 40 40 40 40 40 Non-conductive material M 40 40 40 40 40 40 1st broth coupling agent #5 0.30 0.30 0.30 0.10 0.70 0.30 (A) wtp / relative to the feed lOOwtp 0.75 0.75 0.75 0.25 1.75 0.25 2nd decane coupler % 1.00 0.40 4.50 1.00 1.00 1.00 ( B) wtp / relative to the feed lOOwtp 2.50 1.00 11.25 2.50 2.50 2.50 conductive particles one - one - 6.00 (evaluation) preservation stability 〇〇〇〇〇〇 moisture absorption weldability 〇〇〇〇〇〇 PCT resistance 〇 〇〇〇〇〇13 1290162 Notes to Table 2 and Table 3 • *1 : HP3748, Asahi Kasei Chemicals Co., Ltd.*2: EP828, Oiled Shell Company*3: HX3748, Asahi Kasei Chemicals Co., Ltd.*4: cerium oxide microparticles, DF5 VLD , Longsen Company*5: Amine Denature Type, KBM603, Shin-Etsu Chemical Co., Ltd.*6: Undenatured Type, KBM403, Shin-Etsu Chemical Co., Ltd.* 7: Nitrogen is applied to benzoguanamine resin particles with a particle size of 3.5 // m Au Φ electroplated conductive particles [Table 3] Ingredients 1 2 3 4 5 6 (parts by weight) Epoxy Resin 40 40 40 40 40 40 Epoxy Resin, 2 20 20 20 20 20 20 Latent Hardener 3 40 40 40 40 40 40 Non-conductive material 1 40 40 40 40 40 40 1st broth coupling agent 0.30 0.30 0.05 0.80 0 0.30 (A) wtp / relative to the feed 1 OOwtp 0.75 0.75 0.125 2.00 0 0.75 2nd decane coupler % 0.30 5.00 1.00 1.00 0 1.00 (B ) wtp / relative to the feed 1 OOwtp 0.75 12.50 2.50 2.50 0 2.50 (evaluation) preservation stability 〇〇〇 X 〇〇 moisture absorption weldability X 〇 X — XX PCT resistance 〇 X 〇 〇 X (phenomenon) float The floating hole floats up and the viscosity increases to float up
如表2與表3所示般，由比較例3與4之結果可知， 當第1矽烷偶合劑之含有量相對於非導電性填料100重量 份為0.125重量份時顯得過少，在耐吸濕熔焊性不充分，若 14 1290162As shown in Tables 2 and 3, it is understood from the results of Comparative Examples 3 and 4 that when the content of the first decane coupling agent is 0.125 parts by weight relative to 100 parts by weight of the non-conductive filler, it is too little, and is resistant to moisture absorption. Insufficient weldability, if 14 1290162
:二重4量:5時顯得過多，欠缺保存安定性。另-方面，由 5之結果可知，只要篦 相對於非導雷从* 夕烷偶合劑之含有量 份，即可得到ΓΓ100重量份為°.25重量份〜”5重量 第偶/吸濕炫谭性與保存安定性。是以， 以。.一重量份為適宜。…㈣_重量份 之含較例1與2之結果可知，當第2矽烷偶合劑 里相對於非導電性填料1〇〇重量 顯得過少， 里里知為0.75重量份時 得吸濕熔焊性不充分，以125重量份時顯 果可知二:Γ二。Γ方面’由實施例2與3之結 料⑽重含有量相對於非導電性填 之耐PCT1V:1.0。f量份〜11.25重量份’即可得到良好 疋以，弟2矽烷偶合劑之含有量相對於 電性填料1〇〇重量份以〇·8〇〜12 〇〇重量份為適宜。 UL上可利用料 本發明之連接材料，雖呈現液狀或糊狀，但能以高可 罪性進行連接，且展現優異之保存安定性，再者，即使進 行JEDEC之等級2Α的吸濕熔焊試驗也不會發生浮起，展 現良好之耐吸濕熔焊性。是以，本發明之連接材料做為對 軟性或硬性配線基板連接1C晶片等之各種電子零件之液狀 或糊狀之連接材料為有用者。 15: Double 4: When it is 5, it appears too much, lacking preservation stability. On the other hand, it can be seen from the results of 5 that as long as 篦 is relative to the content of the non-guided squid coupling agent, 100 parts by weight of ΓΓ 25 25 25 ” ” ” ” ” ” ” ” ” ” ” ” Tan nature and preservation stability. Yes, one part by weight is suitable.... (4) _ parts by weight of the results of Comparative Examples 1 and 2, it can be seen that when the second decane coupling agent is relative to the non-conductive filler The weight of the crucible is too small, and the moisture absorption weldability is insufficient when it is 0.75 parts by weight. When it is 125 parts by weight, it can be seen that the second: the second aspect is contained in the crucibles of the examples 2 and 3 (10). The amount is PCT1V: 1.0.f parts by weight to 11.25 parts by weight, which is good, and the content of the 2nd decane coupling agent is 〇·8 with respect to 1 part by weight of the electrical filler. 〇~12 〇〇 by weight is suitable. UL can be used as the connecting material of the present invention, although it is liquid or paste, but can be connected with high sinfulness, and exhibits excellent preservation stability, Even if the JEDEC grade 2Α moisture-welding test does not occur, it shows good resistance to suction. The wet-weld property is that the connecting material of the present invention is useful as a liquid or paste-like connecting material for connecting various electronic components such as a 1C wafer to a flexible or rigid wiring substrate.