TWI289938B - Manufacturing method of nitride light emitting device - Google Patents

Abstract

In the invention, more than two kinds of metals or alloys are used as the combination layer to combine nitride light emitting structure, which is grown on the substrate having low thermal conduction coefficient, with the substrate having high thermal conduction coefficient. After that, through the use of chemical etching method, dry etching method or mechanical polishing method, the substrate having low thermal conduction coefficient is removed so as to place the nitride light emitting structure on the substrate having high thermal conduction coefficient. In addition, by forming ohmic contact between the transparent electric conduction layer and N-type nitride layer, current distribution is greatly increased and light absorption effect is reduced so as to increase light emission benefit of the light-emitting device.

Description

1289938

V. INSTRUCTION DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] refers to a method of fabricating a nitride light-emitting device in a T type, in particular, a high-yield i-type: and/or a nitrided light-emitting structure is replaced with a conductive substrate. Production method. [Prior Art] A nitride light-emitting device is fabricated by a conventional technique, and is grown in a JL, a stone, a sputum, and an alumina (αι2ο3). Based on the observation of actual operation, it is not good, so it must be made of Ρ-type and Ν-type electricity; insulation, conductivity Ϊ again!; = area used 'and reduce the effective illuminating area of the grain to produce Ϊ 导电 conductivity They are far lower than N-type nitrides, and the transparent metal conductive layer acts as an ohmic contact layer. Although it can reach the electric cloth, '· also because of the existence of the conductive layer of the shirt box, and the light effect' and reduce the luminous efficiency. SUMMARY OF THE INVENTION A wafer bonding technique is utilized to produce effects in comparison to conventional techniques. In view of the poor performance of the above-mentioned invention, the present invention is a layer-by-bonding layer which is caused by the dry etching or mechanical polishing of a growth structure and a high thermal conductivity substrate, and the present invention discloses a method for fabricating a nitride light-emitting device. The method, the shortcomings of the optical element, is obtained in various advancements. 'Because the alumina substrate is an insulator and the heat is utilized by the two metals or alloys combined with the nitride light emitted on the low thermal conductivity substrate, the chemical transmission is combined. Etching method,

1289938 V. INSTRUCTIONS (2) The method removes the low thermal conductivity substrate and transfers the nitride light emitting structure to the high thermal conductivity substrate. The object of the present invention is to enable an epitaxial layer of a nitride light-emitting structure to be formed on a substrate having a high thermal conductivity and a high conductivity, and to complete a vertical structure requiring only a single type of wire, such as an N-type electrode or a P-type electrode. Thereby the range of the shielded light-emitting area is greatly reduced. On the other hand, the transparent conductive layer can also be used to form an ohmic contact with the N-type nitride layer, which greatly improves the current distribution and reduces the light absorption effect, thereby improving the luminous efficiency of the light-emitting device. Still another object of the present invention is to provide a method of fabricating a light-emitting device for a substrate having a high thermal conductivity coefficient, so that the device is applied to a higher current and has better stability. Another object of the present invention is to provide a vertical electrode structure in which only a vertical structure of a single type of wire is required, so that the package cost is greatly reduced. In order to make the objects and advantages of the present invention more comprehensible, the detailed description of the embodiments will be described in the accompanying drawings. [Embodiment] The first figure is a schematic diagram of a nitride light-emitting structure according to an embodiment of a method for fabricating a nitride light-emitting device of the present invention. The method for fabricating the nitride light-emitting device of the present invention is provided with a nitride light-emitting structure 20, comprising: a first substrate 201 made of alumina (A 1 20 3), and an N-type nitride epitaxial layer 20 3 is an epitaxial structure. The layer is grown by the current epitaxial technique and formed on the first substrate 2 〇i, and the P-type nitride epitaxial layer 205 is also an epitaxial structure layer, and the growth is also the same as the growth of the N-type nitride epitaxial layer. The epitaxial technique used in layer 2 0 3 is formed in

1289938 V. INSTRUCTIONS (3) N-type nitride epitaxial layer 2 0 3 . For later wafer bonding, the first bonding layer 21 is grown on the p-type nitride epitaxial layer 205 of the nitride light emitting structure 2, and one of deposition, sputtering or electroplating may be selected. In the embodiment of the invention, the deposition method is preferred, and the material is preferably ln gold, preferably 1 micrometer (V m), and other available materials are from aluminum (A1), silver (Ag), gold (Au), nickel (Ni). At least one metal selected from the group consisting of copper (Cu), platinum (pt), titanium (T i), and (pd). The second drawing is a schematic view of a substrate having a high thermal conductivity according to an embodiment of the method for fabricating a nitride light-emitting device of the present invention. The method for fabricating the nitride light-emitting device of the present invention is provided with a second substrate 3 having a high thermal conductivity, the thermal conductivity of which is greater than 15 OW/m-K, and the material may be any of a semiconductor, a metal or an alloy material. According to an embodiment of the invention, the second substrate 3 is made of aluminum. In order to combine with the wafer of the nitride light-emitting structure 20 later, a second bonding layer 31 is formed on the second substrate 30, and the material of the second bonding material includes aluminum (A1), silver (Ag), At least one I// metal selected from the group consisting of gold (Αιι), nickel (Ni), steel 7Cu), platinum (Pt), titanium (Ti), and PjQ, which can be formed by deposition or splashing One of the plating or electroplating. According to an embodiment of the present invention, the second bonding layer 3 is preferably made of aluminum, and is formed by deposition, preferably having a thickness of 1 μm (in m). The third figure is a nitride according to the present invention. The manufacturing method of the light-emitting device is a schematic diagram of the combination of the high thermal conductivity substrate and the nitride light-emitting structure. The high thermal conductivity of the embodiment of the method for fabricating the nitride light-emitting device is as follows: the two substrates 30 are combined with the nitride light-emitting structure 2 Make the first combination

Page 7 1289938 V. DESCRIPTION OF THE INVENTION (4) The second bonding layer 3 1 is combined, and the arrow indicates the direction of the applied pressure, which is fixed by the first bonding layer 2 1 and the second bonding layer 31 by a jig. And they are pressed against each other face to face. The preferred temperature of the combination of the first bonding layer 21 and the second bonding layer 31 is 1300 degrees, and the preferred pressure is 4 kilograms per square centimeter ('kg/cm2).

The fourth figure is a schematic diagram of the transfer of the nitride light-emitting structure according to the manufacturing method of the nitride light-emitting device of the present invention to a substrate having a high thermal conductivity. As a result of the second figure, the first substrate of the first light-emitting structure 2 0 1 ' is removed, and the remaining portion of the nitride light-emitting structure 20 is transferred to the second substrate 30 having a high thermal conductivity coefficient, and At the same time, the nitride epitaxial layer 2〇3 is exposed. The method of removing the first substrate 201 may be a chemical etching method, a dry etching method or a mechanical polishing method, and the embodiment of the present invention adopts a smashing method Δ. / Fifth Fig. is a schematic view showing a transparent conductive layer of the embodiment of the method for fabricating a nitride light-emitting device of the present invention. On the gambling nitride layer 2 〇 3, a transparent conductive layer 4 is deposited, which can be formed by deposition, sputtering or electroplating. A 'transparent conductive layer 4 is made of indium oxide (Indiuin 0Xide), vaporized tin. Group of (Tin oxide), indium tin oxide, Zinc oxide, Indium zinc 0Xide, conductive nitride (CN) and Magnesium oxide

At least one selected from the group. In the embodiment of the invention, indium oxide is used as the material of the transparent conductive layer 4. Fig. 6 is a view showing an embodiment of a method of fabricating a nitride light-emitting device according to the present invention, an N-type electrode and a p-type electrode. The embodiment of the present invention deposits an N-type electrode 5 on the transparent conductive layer 4 and a second substrate 3 on the high thermal conductivity coefficient.

1289938 V. INSTRUCTIONS (5) Deposition to form a P-type electrode 6. In addition to the deposition formation mode, one of sputtering or plating may be used to form the N-type electrode 5 and the P-type electrode 6. Fig. 7 is a flow chart showing a method of manufacturing a nitride light-emitting device according to the present invention. A method of manufacturing a nitride light-emitting device of the present invention is provided with a nitride light-emitting structure 20 and a second substrate 30. For a later step 75 of wafer bonding, a step 71 of forming a first bonding layer and a step 73 of forming a second bonding layer, respectively, a P-type nitride epitaxial layer of the nitride light-emitting structure 20, respectively, are performed. A second bonding layer 31 is deposited on the first bonding layer 21' and a second substrate 3 on the high thermal conductivity. Step 7 of bonding, the first bonding layer 2 1 and the second bonding layer 31 are fixed by a jig and pressed against each other face to face, and the nitride light emitting structure 20 is transferred to the second substrate 3 having high thermal conductivity. 〇上. The preferred combination of the first bonding layer 21 and the second bonding layer 31 is a temperature of 3 摄 Celsius, and a preferred pressure is 4 kg/cm 2 (cm 4 ). Next, the step 77 of forming the transparent conductive layer 4 is performed, the first substrate 201 of the nitride light emitting structure 20 is removed, so that the N-type nitride epitaxial layer 2 0 3 of the nitride light emitting structure 2 is exposed, and a transparent conductive layer is formed. 4 on the _ nitride epitaxial layer 2 0 3 .

Finally, the formation of the electrode on the transparent conductive layer 4, and the formation of a p-type is described herein above for the purpose of limiting the scope of the invention as defined by the present invention. Steps 7 and 9 respectively form a preferred embodiment in which the N-type electrode 5 is formed on the second substrate 30 of the electrode 6, and it is not intended to use any application that does not deviate from the present invention or modification.

Page 9 1289938 BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic diagram of a nitride-emitting structure of a nitride light-emitting device according to the present invention. The second embodiment of the method embodiment is a schematic diagram of a substrate and a high thermal conductivity substrate of a nitride light-emitting device according to the present invention. & Schematic diagram of an embodiment of a method of manufacturing a method embodiment. A schematic diagram of an embodiment of the method. Manufacturing method embodiment

The third diagram is based on the high thermal conductivity substrate of the nitride light-emitting device according to the present invention combined with the nitride light-emitting structure. The fourth diagram is based on the fifth embodiment of the nitride light-emitting structure of the nitride light-emitting device according to the present invention. A schematic view of a bright conductive layer of the nitride light-emitting device of the present invention. Fig. 6 is a schematic view showing an N-type electrode and a P-type electrode according to a method of manufacturing a nitride light-emitting device according to the present invention. <Seventh Embodiment is a flow of a method for fabricating a nitride light-emitting device according to the present invention. [Explanation of Symbols] 20 Nitride light-emitting structure 201 First substrate 9 2 0 3 _ nitride epitaxial layer 20 5 p-type nitride epitaxial Layer 21 first bonding layer 30 second substrate

1289938 Brief description of the pattern 31 Second bonding layer 4 Transparent conductive layer 5 N-type electrode 6 P-type electrode 71 Step of forming a first bonding layer 73 Step of forming a second bonding layer Step 77 of bonding Step 77 of forming a transparent conductive layer Step of forming an electrode

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Claims (1)

1289938 VI. Application for a patent · i· A method for fabricating a nitride light-emitting device, comprising the steps of: providing a nitride light-emitting structure and a second substrate, the nitride light-emitting structure comprising: a first substrate a nitride epitaxial layer is formed on the first substrate; and a P-type nitride epitaxial layer is formed on the N-type nitride epitaxial layer to form a first bonding layer on the nitride emitting structure a p-type nitride is formed on the crystal layer; a second bonding layer is formed on the second substrate, and the material of the second substrate is any one of a semiconductor, a metal or an alloy material; and the first bonding layer is bonded And the second bonding layer; removing the first substrate of the nitride light emitting structure to expose the N-type nitride epitaxial layer of the nitride light emitting structure; forming a transparent conductive layer on the N-type nitride epitaxial layer; Forming an N-type electrode on the transparent conductive layer; and forming a P-type electrode on the second substrate. 2. The method of claim 1, wherein the material of the first bonding layer is an indium tin alloy or a metal aluminum (A1), a metal silver (Ag), a metal gold (au). At least one metal selected from the group consisting of metallic nickel (Ni), metallic copper (Cu), a metallic surface (pt), a metallic titanium (Ti), and a metallic palladium (pd). 3. The method of claim 1, wherein the first bonding layer has a preferred thickness of 1 micron (#m). </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 5. The method of claim 1, wherein the second substrate has a thermal conductivity greater than 150 W/m-K. 6. The method of claim 1, wherein the preferred material of the second substrate is a metal aluminum (A 1 ). 7. The method of claim 1, wherein the material of the second bonding layer comprises a metal (A1), a metallic silver (Ag), a metallic gold (Au), and a metal recording (Ni). And at least one metal selected from the group consisting of copper (Cu), a metal (Pt), a titanium (Ti), and a metal (Pd). 8. The method of claim 1, wherein the first bonding layer has a preferred thickness of 1 micron (#m). 9. The method of claim 1, wherein the second bonding layer is grown in one of deposition, sputtering or electroplating. The method of claim 1, wherein the bonding of the first bonding layer and the second bonding layer fixes the first bonding layer and the second bonding layer by a fixture and Face to face each other. 11. The method of claim 10, wherein a preferred temperature of the combination of the first bonding layer and the second bonding layer is 30 degrees Celsius (300 degrees C), preferably pressure The value is 4 kg/cm2 per square centimeter (4 kg/cm2). The method of claim 1, wherein the method of removing the first substrate may be a chemical etching method, a dry etching method or a mechanical grinding method. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; At least selected from the group consisting of indium tin oxide, zinc oxide, indium Zinc oxide, a conductive vapor (CN), and Magnesium 〇xide One. Page 14