TWI289309B - Operation method to erase one byte for non-volatile memory - Google Patents

Abstract

An operation method to erase one byte for non-volatile memory is disclosed. A non-volatile memory, comprising a word line having a plurality byte and a word line driver connected with the word line, is provided. A byte is selected, which would be erased. First, the storage states of all bits of un-selected bytes located at the same line with the selected byte are read and stored another memory in system. Then, high voltage is forced on the word line through the word line driver, and data in all selected and un-selected bytes are erased. After, data of the un-selected bytes, which stored in the other memory, are re-written into the original bytes. Therefore, data of the selected byte is erased, and data of the un-selected bytes are remained.

Description

1289309

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to non-volatile memory technology, and more particularly to an operation method in which a byte is an erased (Erase) unit in a non-volatile memory. [Prior Art] Memory can be divided into two categories: volatile memory (V〇lati le Memory) and non-volatile memory (Non-volatile memory). Among them, the data in the volatilized memory may be due to the disappearance of the power supply or the magnetic field interference, such that the stored data disappears or is damaged, such as dynamic random access memory (DRAM) and static random memory memory. (Static Random Access Memory; SR AM) are all volatile memory. As for the characteristics of non-volatile memory, it has the function of "memory". Even when the current is turned off, the data stored in the memory does not disappear. Among them, the non-volatile memory can be roughly divided into several types. Read Only Memory (ROM) and Flash Memory, such as MASk R〇M, OTP ROM, erasable In addition to programmable read-only memory (EPROM), electrically erasable and programmable read-only memory (EEPR〇M), flash memory and multi-programmed read-only memory (MTP ROM). Among them, 'EPROM, EEPR0M and flash memory can be repeatedly written multiple times, but when erasing data, EPROM should be pulled out from the system and placed in ultraviolet light for tens of minutes before erasing data. . When using EEPR0M, only the appropriate negative voltage is applied to the control gate of its memory unit.

1289309

_ Case No. 92116012 V. Invention Description (2) The effect of erasure can be achieved without removing it from the system. In addition, the memory is similar to EEPR0M, and it is also electrically erased. The biggest difference is that it is a block of _ block = "two and the data entered into the 'EEP calendar is a byte. (Byte) is shown in the first figure as a structural schematic view of a non-volatile memory such as an electrically erasable and programmable read only memory (EEPROM), and the first = not fast, for example The non-volatile memory of the flash memory is not intended to be cut. Figure 1 shows that the non-volatile memory 10 has several bits in the X direction, (Bit Llne) 12, and several words in the Υ direction. The line (w〇rd Un ^4, f and the bit line of the bit line i6 at the intersection of the bit line 12 and the word line 14 is the bit energy of the bit i6. The *2 bit 7016 has only 1 (representing the path) and 〇 (representing the open circuit) Two kinds of centroids are inconvenient in application, so they are reconstituted into a new bit 'called a byte (B ite or B yte ) 1 8 . ^ =, please refer to Figure 2, non-volatile The memory 5 has a plurality of bit lines 52 in the x direction, and a plurality of word lines in the γ direction, such as a line 54a, a word line 54b, a word line 54c, and a word line 5 The character is connected with a plurality of bytes, such as a byte group 58a, a byte group 58b and a bit group 58c, and the like, and each byte group is composed of 8 bits respectively. In the structure of the figure and FIG. 2, the word lines are all in the word line driver 2, for example, the word line driver 20 in FIG. 1 and the sub-line driver 6〇a in FIG. 2, characters. Line driver 60b, word line driver 60 嗔 word line driver 6〇d, etc. These characters

Page 7 1289309 _ Case No. 92116012_年月日日__ V. Invention Description (3) The main function of the line driver benefits is that 'the south line voltage can be supplied to the selected word line via the word line driver for connection here. The data bit of the bit line on the word line works except for (Erase), while other word line elements that are not selected but are not given a high voltage are not subjected to bit erase work. The EEPROM structure of Figure 1 differs from the flash memory structure of Figure 2 in that the number of bytes connected to the word line driver is different. Wherein, in the EEPROM structure of FIG. 1, each byte group is connected to a word line driver, and in the flash memory structure of FIG. 2, a page of the page group shares a word line. driver. Therefore, this is why when the data erasing step is performed, the flash memory system is in units of blocks, and the EEPROM is in units of bytes to erase data. Since the above two non-volatile memory erase units are different, they can be applied separately depending on the product requirements. However, as today's electronic products tend to shrink in size and increase memory capacity, in the EEPROM product, because each byte is connected to a word line driver, the area of the word line driver is a single bit. The group size is similar, so it is quite difficult to reduce the size of the product. SUMMARY OF THE INVENTION In view of the problem that the EEPROM product is difficult to size down due to the word line driver structure, it is an object of the present invention to provide a method for sharing the structure of a word line driver by using a plurality of byte groups, and It can perform erasing work in units of bytes, and the size of the memory can be reduced by reducing the structure of the word line driver.

Page 8 1289309

According to the above object, the operation method of the present invention applied to the non-volatile byte group as the erasing unit includes: · First, ί = the deleted byte data, and is stored in the system to be erased. The word meta-driver 'provides a high voltage to the word line 丄, and all the data of the group on the 兀 line is erased. After that, it is not expected that it is rewritten in the original position of the word line, and the erased bit state is not selected. In this way, the erase function can be applied to the non-volatile unit by the bit method, and the memory product is easier to make it. In addition to the recovery of the memory, the implementation method of the tuple is the method of erasing the unit. The following is a comparison of the invention: the description of the non-volatile memory is more detailed and clarified: To the illustration of Figure 3.疋, can be described as follows and in conjunction with Figure 3, according to the embodiment of the present invention, the method of applying the byte as the smear embodiment is applied to the non-swinging invention in this embodiment. The flow of the invention is not limited to the second only to the second: 2, the structure is explained 'assuming a non-volatile memory in the solid state of a certain page of a bit-level data, the main memory has a bedding, and then hope The word memory of the hair memory 50 is given = division. For example, in Figure 2, there is data stored in '4a, such as storage? In the application, the present 2 map l records 〇 and L this one 卜 卜 bits 1289309

5. Description of the Invention (5) - The position of the byte 58a in the page of the word line 54a is removed from the position of the element group 58a and the bit group 58 iodide bit group 58c. Next, in the first step, step 100 of the present invention is performed, in which the read byte is located in the same word line and the complex is selected. For example, due to the m-mouse in the present invention; the ϋ ^ ^ ^ n it in the case of the instance of Xi Zeng Jiang Xuan - 54a in the page of the byte 58 & data erase, so in step 〇 π line reads f byte group 58a other unselected erased in the same word line: that is, the top material, that is, read word line 54 & y, 兀 group 58c, etc., and this 4b Data / and 58b in the byte memory. - Belle or state is copied to the other in the system - where 'since each bit in the byte does not have a state of 0 or 1. When the data is temporarily stored in 俨=拉其可:; 整: Each system in the byte that is not selected to be erased ί does not necessarily contain every unselected byte: 同In the light storage step, the step J 〇〇 can only be erased for the unprogrammed, the programmed byte in the byte, or the step ΐθθ can include all the unsigned The other memory in the above-mentioned system is taken and stored for temporary storage; π volatile memory or other non-volatile, etc., and the invention is not limited thereto.亍 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I

1289309 A No. 921 9 9、Inventive Note (6) 修正 Correction is located at the character line 5 4 aJL, and & 士绿c d is connected. Therefore, the Rebels and the word line driver 6 are connected to + + . The dynamic voltage is applied so that the high voltage is driven by the word line 5|6〇a to act on the word line 54a. Therefore, at 60a Line erase all the bytes of the data, package or /m / y ^ select carry group 58c, etc., the data on it is divided by \ bit, group ... bit ... _, then, step 1 〇 4, will be the above The temporary storage data is re-written in the word line to restore its original state, and the above original is stored in another memory, and the temporarily stored bits f疋 and bits=: are rewritten into the character. Line 5 is on. That is, for example, it is originally located in the byte 58b and placed in the 58b, and the data originally located on the byte 58c is re-re-arranged. There is no information on the U ί t t ί 元 元 group, the original;

The state is unprogrammed, and since it is read, the byte is also :J is, so 'whether or not its state is restored': 2 state.俅1 indicates no data, therefore, the data on the above steps 100, 102 and 10 58a will be erased, while the other bytes, moxibustion, and the information on the group 5 8 c can still be retained. .疋,, and 5 8 b with bits: the operation of the above-mentioned clearing of a single byte is limited to clearing only a single byte, and the other is not in the form of a bit, for example, clearing a plurality of bits to erase the step: geese = The method of the invention is not limited thereto. The invention can be applied to the present invention because the above-mentioned read memory and temporary memory are known to those skilled in the memory by the individual operation methods.

1289309 Case No. 92116012 修正 Amendment V. Description of invention (7) Capital. With the method of operation of the present invention, the word line driver is thus connected to a structure of a plurality of bytes, and may have the function of eliminating a single byte. In this way, since a single word line driver can be shared by multiple bytes, the size of the wafer can be reduced, and the conventional method of eliminating a single bit must make one word line driver on each byte, thereby increasing the area of the chip. Shortcomings. The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention as defined by the present invention; Modifications or modifications are intended to be included in the scope of the claims below.

Page 12 1289309 _ Case No. 92116012_± BRIEF DESCRIPTION OF THE DRAWINGS MODIFICATION [Simplified Description of the Drawings] In order to make the above and other objects, features, advantages and preferred embodiments of the present invention more obvious and obvious, The figure, wherein: FIG. 1 is a schematic top view of a generally erasable and programmable read only memory (EEPR0M); FIG. 2 is a schematic top view of a general flash memory; And FIG. 3 is a schematic flow chart of an operation method for applying a byte as an erase unit in a non-volatile memory according to an embodiment of the invention. [Simplified description of component symbol] 10 Non-volatile memory 12-bit line 14 Word line 16-bit 18-bit 20-character line driver 50 Non-volatile memory 52 Bit line 54a Word line 54b Character Line 54c word line 54d word line 5 8a byte 58b byte

1289309 Case No. 92116012_^ Monthly correction diagram Simple description 5 8c byte 6 0 a Word line driver 6 0 b Word line driver 6 0 c Word line driver 6 0 d Word line driver 1 0 0 Step 1 0 2 Step 1 0 4 Steps

HI

Claims (1)

1289309 Amendment No. 92116012 VI. Scope of Application 1. An operational method is applied to a non-volatile first memory, wherein the first memory system includes at least one word line, at least on the word line a first byte and at least a second byte, and a word line driver connected to the word line, the operation method at least comprising: reading one of the second byte and storing the data in a In the second memory, a high voltage is applied to the word line via the word line driver to erase data of the first byte and the second byte; and reading is located in the second memory The data in the volume is rewritten into the second byte of the word line in the first memory. 2. The method of operation of claim 1, wherein the second memory system is selected from the group consisting of a non-volatile memory and a volatile memory. 3. The method of operation of claim 1, wherein the first memory system is an electrically erasable and programmable read only memory (EEPROM). 4. The method of operation of claim 1, wherein the second memory system is a static random access memory (SRAM). 5. The method of operation of claim 1, wherein the second memory system comprises a programmed and unprogrammed portion. 6. A data erasing method for a memory, comprising at least: providing a first memory, wherein the first memory includes at least: Page 15 1289309 Case No. 92116012 Λ _ Ά 曰 Amendment 6. The patent application scope is at least one character line; at least one first byte having a first data is located on the character line; and at least one second having a second data a byte is located on the character line; and a word line driver connected to the word line, reading the second data of the second byte in the first memory, and storing the second data in a second memory Providing a high voltage on the word line via the word line driver, thereby erasing the first data of the first byte and the second of the second byte in the first memory And reading the second data stored in the second memory and rewriting the second byte on the character line of the first memory. 7. The data erasing method of the memory according to claim 6, wherein the second memory system is selected from a non-volatile memory and a volatile memory. 8. The data erasing method of the memory according to claim 6, wherein the first memory system is an electrically erasable and programmable read only memory (EEPR0M). 9. The data erasing method of the memory according to claim 6, wherein the second memory system is a static random storage memory. Page 16 1289309 Case No. 92116012 Page 17 1289309 _ Case No. 921ifim9_ 生月日一-___ — IV. Summary of Chinese Invention (Invention Name · Operation Method of Using Bits as Erasing Units in Non-Volatile Memory) An Operation Method, Application In a non-volatile memory, the memory structure includes a word line having a plurality of bytes and a word line driver coupled to the word line to erase one of the selected byte data. First, this method reads the byte data that has not been erased and stores it in another memory in the system. Next, via the word line driver, a high voltage is applied to the word line, and the data for all the bytes of the word line is erased. Then, the temporary data in the other memory is rewritten in the original position of the word line to restore the status of the unselected byte. V. (1) The representative figure of this case is: Figure (2), the representative symbol of the representative figure of this case is a simple description: 1 〇0, 1 0 2 and 1 0 4 Step 5, English abstract (invention name: OPERATION METHOD A non-volatile memory, comprising a word line having a plurality of bytes and a word line driver connected with the word line, A _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Is provided. A byte is selected, which would be erased. First, the storage states of all bits of un-selected bytes located at the same line with the selected byte are read and stored at 1289309 _ Case No. 92116012_年月日日 Amendment VI. Designated representative map Page 4