TWI289309B - Operation method to erase one byte for non-volatile memory - Google Patents
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【發明所屬之技術領域】 本發明係有關於非揮發性記憶體技術,特別是有關於非揮 發性圮憶體中以位元組(Byte)為抹除(Erase)單位的操作 方法。 【先前技術】 記憶體可分為揮發性記憶體(V〇lati le Memory)與非揮發 性記憶體(Non-volatile Memory)兩大類。其中,揮發^ 記憶體中的資料,可能因為電源消失或磁場干擾等因X素, 使得儲存資料消失或毀損,例如動態隨機儲存記憶體 (Dynamic Random Access Memory; DRAM)與靜態隨機健存 記憶體(Static Random Access Memory ; SR AM)都是屬於 揮發性記憶體。至於非揮發性記憶體的特色,是其具有 「記憶」的功能,即使當電流關掉後,儲存在記憶體裡面 的資料並不會消失者,其中,非揮發性記憶體大致可分為 數種唯讀記憶體(Read Only Memory ; ROM)與快閃記憶體 (Flash Memory),例如光罩式唯讀記憶體(MASk R〇M)、一 次可程式唯讀記憶體(OTP ROM)、可抹除且可程式唯讀記 憶體(EPROM)、可電除且可程式唯讀記憶體(EEPR〇M)、快 閃記憶體與多次可程式唯讀記憶體(MTP ROM)等形式。 其中’ EPROM、EEPR0M與快閃記憶體皆可重複寫入多次, 但在抹除資料時,使用EPROM則須將其自系統中拔起,並 置於紫外線下數十分鐘,方可抹除資料。當使用EEPR0M 時,則僅要在其記憶單元的控制閘上施以適當的負電壓,BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to non-volatile memory technology, and more particularly to an operation method in which a byte is an erased (Erase) unit in a non-volatile memory. [Prior Art] Memory can be divided into two categories: volatile memory (V〇lati le Memory) and non-volatile memory (Non-volatile memory). Among them, the data in the volatilized memory may be due to the disappearance of the power supply or the magnetic field interference, such that the stored data disappears or is damaged, such as dynamic random access memory (DRAM) and static random memory memory. (Static Random Access Memory; SR AM) are all volatile memory. As for the characteristics of non-volatile memory, it has the function of "memory". Even when the current is turned off, the data stored in the memory does not disappear. Among them, the non-volatile memory can be roughly divided into several types. Read Only Memory (ROM) and Flash Memory, such as MASk R〇M, OTP ROM, erasable In addition to programmable read-only memory (EPROM), electrically erasable and programmable read-only memory (EEPR〇M), flash memory and multi-programmed read-only memory (MTP ROM). Among them, 'EPROM, EEPR0M and flash memory can be repeatedly written multiple times, but when erasing data, EPROM should be pulled out from the system and placed in ultraviolet light for tens of minutes before erasing data. . When using EEPR0M, only the appropriate negative voltage is applied to the control gate of its memory unit.
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_案號 92116012 五、發明說明(2) 便可達到抹除的效果,無須從系統中移除。另外, 憶體則與EEPR0M類似,也是以電性方式來抹降、j §己 二最大的不同點是在於其是以一塊_塊=“二與 來Γ入資料’EEP歷是以位元組(Byte)為單位 第1圖所繪示為例如為可電除且可程式唯讀記憶體 (EEPROM)之非揮發性記憶體的結構上視示意圖&,而第 所=不為例如為快閃記憶體之非揮發性記憶體的結 不意圖。 伐* 第1圖,在X方向上非揮發性記憶體10具有數條位元 ,(Bit Llne)12,而在Υ方向則數條字元線(w〇rd Un ^4, f且在位元線12與字元線14交叉處則為位元i6的位 能。/*2位7016僅具有1(代表通路)和〇(代表斷路)兩種狀 心,在應用上較不方便,因此便將其重新組成一個新 位’稱為位元組(B i t e或B y t e ) 1 8。 ^ =,請參照第2圖,非揮發性記憶體5〇具有在χ方向上 的數條位元線52,以及在γ方向上的數條字元線,例如 元線54a、字元線54b、字元線54c與字元線5扨等。字元 上係連接有數個位元組,例如位元組58a、位元組58b與位 兀組58c等等,而每個位元組則分別由8個位元“所構成。 而第1圖與第2圖之結構中,字元線皆以字元線驅動器 二來Λ段’例如第1圖中的字元線驅動 器20以及第2圖中的子凡線驅動器6〇a、字元線驅動器 60b、字元線驅動器60嗔字元線驅動器6〇d等。這些字元_ Case No. 92116012 V. Invention Description (2) The effect of erasure can be achieved without removing it from the system. In addition, the memory is similar to EEPR0M, and it is also electrically erased. The biggest difference is that it is a block of _ block = "two and the data entered into the 'EEP calendar is a byte. (Byte) is shown in the first figure as a structural schematic view of a non-volatile memory such as an electrically erasable and programmable read only memory (EEPROM), and the first = not fast, for example The non-volatile memory of the flash memory is not intended to be cut. Figure 1 shows that the non-volatile memory 10 has several bits in the X direction, (Bit Llne) 12, and several words in the Υ direction. The line (w〇rd Un ^4, f and the bit line of the bit line i6 at the intersection of the bit line 12 and the word line 14 is the bit energy of the bit i6. The *2 bit 7016 has only 1 (representing the path) and 〇 (representing the open circuit) Two kinds of centroids are inconvenient in application, so they are reconstituted into a new bit 'called a byte (B ite or B yte ) 1 8 . ^ =, please refer to Figure 2, non-volatile The memory 5 has a plurality of bit lines 52 in the x direction, and a plurality of word lines in the γ direction, such as a line 54a, a word line 54b, a word line 54c, and a word line 5 The character is connected with a plurality of bytes, such as a byte group 58a, a byte group 58b and a bit group 58c, and the like, and each byte group is composed of 8 bits respectively. In the structure of the figure and FIG. 2, the word lines are all in the word line driver 2, for example, the word line driver 20 in FIG. 1 and the sub-line driver 6〇a in FIG. 2, characters. Line driver 60b, word line driver 60 嗔 word line driver 6〇d, etc. These characters
第7頁 1289309 _案號92116012_年月日__ 五、發明說明(3) 線驅動益的主要功能在於’可經由字元線驅動器提供南電 壓於選擇的字元線上,以進行連接於此字元線上之位元的 資料株除(Erase )工作,而其他未被選擇而未被給予高電 壓的字元線上位元,則不進行位元抹除工作。 而第1圖之EEPROM結構與第2圖之快閃記憶體結構的不同點 在於,字元線驅動器所連接的位元組數量不同。其中,第 1圖之EEPROM結構中,每一個位元組即連接一個字元線驅 動器,而第2圖之快閃記憶體結構中,一頁(Page)的位元 組則分享一個字元線驅動器。因此,這也就是為什麼當資 料抹除步驟進行時,快閃記憶體係以區塊為單位,而 EEPROM係以位元組為單位,來進行抹除資料。 由於上述兩種非揮發性記憶體的抹除單位不同,因此可視 產品需要而分別加以應用。但是,由於現今電子產品皆趨 向縮小尺寸與增大記憶容量的方向發展,而EEPROM產品中 卻因為每一位元組即連接一個字元線驅動器,此字元線驅 動器的面積即與單一位元組面積大小相似,所以相當不易 再縮小其產品尺寸。 【發明内容】 鑒於EEPROM產品因字元線驅動器結構,而造成尺寸縮小不 易的問題,因此本發明的目的,係提供一種方法,利用多 個位元組共用一字元線驅動器的結構,並使其可進行以位 元組為單位的抹除工作,由於減少字元線驅動器的結構, 因此可縮小記憶體的尺寸。Page 7 1289309 _ Case No. 92116012_年月日日__ V. Invention Description (3) The main function of the line driver benefits is that 'the south line voltage can be supplied to the selected word line via the word line driver for connection here. The data bit of the bit line on the word line works except for (Erase), while other word line elements that are not selected but are not given a high voltage are not subjected to bit erase work. The EEPROM structure of Figure 1 differs from the flash memory structure of Figure 2 in that the number of bytes connected to the word line driver is different. Wherein, in the EEPROM structure of FIG. 1, each byte group is connected to a word line driver, and in the flash memory structure of FIG. 2, a page of the page group shares a word line. driver. Therefore, this is why when the data erasing step is performed, the flash memory system is in units of blocks, and the EEPROM is in units of bytes to erase data. Since the above two non-volatile memory erase units are different, they can be applied separately depending on the product requirements. However, as today's electronic products tend to shrink in size and increase memory capacity, in the EEPROM product, because each byte is connected to a word line driver, the area of the word line driver is a single bit. The group size is similar, so it is quite difficult to reduce the size of the product. SUMMARY OF THE INVENTION In view of the problem that the EEPROM product is difficult to size down due to the word line driver structure, it is an object of the present invention to provide a method for sharing the structure of a word line driver by using a plurality of byte groups, and It can perform erasing work in units of bytes, and the size of the memory can be reduced by reducing the structure of the word line driver.
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根 據以上所述之目的,本發明應用於非揮發性 位元組為抹除單位之操作方法包括··首先,ί = 除的位元組資料,並儲存於系統中的另-記 以 抹 著 字 中 元驅動器’提供高電壓於字元線丄,而兀線上所有位凡組的資料抹除。之後, 未料,重新寫入於字元線的原本位置中二 未選擇抹除之位元組狀態。 如此一來,當上 可具有以位元為 述方法應用於非揮發 單位的抹除功能,並 性的記憶體產品 且較易於使其尺 中, 選擇 。接 將此 憶體 恢復 中, 寸縮 實施方式】 元組為抹除單位的操作方法 以下係利用本發明之較 :隹的非揮發性記憶 明之敘述更加詳盡與ί:實,進行說明,並為了 至第3圖之圖示。 疋,可 > 照下列描述並配合 第3圖所繪示為根據本發 憶體中以位元組為抹 實施例’應用於非揮每 本發明在此實施例中=早位之操作方法的流程示意 發明不限僅應用於第二以第2:,結構進行說明’ 假設非揮發性記憶中固之二構 某頁之某一位元級資料、、主存有貝料,並且接著希望 發性記憶體5 0的字亓給=除。以第2圖為舉例來說, 、' 4a中儲存有資料,例如儲? 應用 中, 本發 2圖 l記 〇而 L本 其中 卜揮 卜位 1289309According to the above object, the operation method of the present invention applied to the non-volatile byte group as the erasing unit includes: · First, ί = the deleted byte data, and is stored in the system to be erased. The word meta-driver 'provides a high voltage to the word line 丄, and all the data of the group on the 兀 line is erased. After that, it is not expected that it is rewritten in the original position of the word line, and the erased bit state is not selected. In this way, the erase function can be applied to the non-volatile unit by the bit method, and the memory product is easier to make it. In addition to the recovery of the memory, the implementation method of the tuple is the method of erasing the unit. The following is a comparison of the invention: the description of the non-volatile memory is more detailed and clarified: To the illustration of Figure 3.疋, can be described as follows and in conjunction with Figure 3, according to the embodiment of the present invention, the method of applying the byte as the smear embodiment is applied to the non-swinging invention in this embodiment. The flow of the invention is not limited to the second only to the second: 2, the structure is explained 'assuming a non-volatile memory in the solid state of a certain page of a bit-level data, the main memory has a bedding, and then hope The word memory of the hair memory 50 is given = division. For example, in Figure 2, there is data stored in '4a, such as storage? In the application, the present 2 map l records 〇 and L this one 卜 卜 bits 1289309
五、發明說明(5) —_ 元組58a、位元組58碘位元組58c等位置中, 望將字元線54a這頁中的位元組58a資料抹中除。接者,希 首先,進行本發明之步驟100,係讀取 存 之位元組位於同一字元線中复 帝仔&擇祙除 料。舉例來說,由於在本發明m抹;之位元組資 ϋ: Λ ^ ^ ^ n it 實知例中希曾蔣玄- 54a适頁中的位元組58&資料抹除,因此在步 〇 π線 讀取f位元組58a同一字元線中其他未選擇抹除之:即 上的貝料,也就是讀取字元線54&上 y、 兀組 58c等資料,並且將這4b資料 / 且58b與位元組 記憶體中。 -貝枓或狀態複製到系統中的另— 其中’由於位元組中不-定每個位元皆儲 能包含0或1之狀態。當資料被暫存於俨=拉其可 :;整:錄未被選擇抹除之位元組中的每個係 Ϊ ί不一定每個未被選擇的位元組皆含有Ϊ: 同 S進灯貝料暫存步驟時,步驟J 〇 〇可僅針對未、楼、 此 位元組中的已程式位元組中,對其^ 擇抹除之 作,或者步驟ΐθθ可包括所有未 元嗔取與儲存動 上述糸統中的另一記憶體,係用以藉以暫存;π 揮發性記憶體或其他非揮發 等,本發明不限於此。 亍私I王《己憶 接著,進行步驟1 0 2,經由宝 具有選擇抹除之…的由字予:線線上㈣二^ 所有“[舉例來說’上述選擇抹除資料的位= 二的5. Description of the Invention (5) - The position of the byte 58a in the page of the word line 54a is removed from the position of the element group 58a and the bit group 58 iodide bit group 58c. Next, in the first step, step 100 of the present invention is performed, in which the read byte is located in the same word line and the complex is selected. For example, due to the m-mouse in the present invention; the ϋ ^ ^ ^ n it in the case of the instance of Xi Zeng Jiang Xuan - 54a in the page of the byte 58 & data erase, so in step 〇 π line reads f byte group 58a other unselected erased in the same word line: that is, the top material, that is, read word line 54 & y, 兀 group 58c, etc., and this 4b Data / and 58b in the byte memory. - Belle or state is copied to the other in the system - where 'since each bit in the byte does not have a state of 0 or 1. When the data is temporarily stored in 俨=拉其可:; 整: Each system in the byte that is not selected to be erased ί does not necessarily contain every unselected byte: 同In the light storage step, the step J 〇〇 can only be erased for the unprogrammed, the programmed byte in the byte, or the step ΐθθ can include all the unsigned The other memory in the above-mentioned system is taken and stored for temporary storage; π volatile memory or other non-volatile, etc., and the invention is not limited thereto.亍 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I
1289309 A號921議9 五、發明說明(6) 曰 修正 位於字元線5 4 aJL,而& 士綠c d 接。所以,驅叙士 士广 係與字元線驅動器6〇璉 接+ + .動回電壓,使高電壓經由字元線驅動5|6〇a 而作用於字元線54a,因此在 ,益60a 行抹除資料的所有位元組,包或/m/y^選擇進 位元組58c等,其上的資料都被\位除,组…位…_ 之後,,行步驟1〇4,將上述暫存 資料’重新寫入字元線中,以恢復其原來狀抹 說,將上述原本儲存於另一記憶體中,暫存的位f疋 與位=:等之資料,重新寫入字元線5二 上。亦即例如原本位於位元組58b上 、置 58b中,而原本位於位元組58c上的資料即重新重新位广組 U ί ΐ原t ί元組上並無任何資料,則原本;:1289309 A No. 921 9 9、Inventive Note (6) 修正 Correction is located at the character line 5 4 aJL, and & 士绿c d is connected. Therefore, the Rebels and the word line driver 6 are connected to + + . The dynamic voltage is applied so that the high voltage is driven by the word line 5|6〇a to act on the word line 54a. Therefore, at 60a Line erase all the bytes of the data, package or /m / y ^ select carry group 58c, etc., the data on it is divided by \ bit, group ... bit ... _, then, step 1 〇 4, will be the above The temporary storage data is re-written in the word line to restore its original state, and the above original is stored in another memory, and the temporarily stored bits f疋 and bits=: are rewritten into the character. Line 5 is on. That is, for example, it is originally located in the byte 58b and placed in the 58b, and the data originally located on the byte 58c is re-re-arranged. There is no information on the U ί t t ί 元 元 group, the original;
態為未程式,由於經過讀取後,位元組上也 :J 在,因此’不論是否恢復其狀態’ :2存 狀態。 俅1示符耆無資料 因此,經過上述步驟100、步驟102與步驟10 58a上的資料會被抹除,而其他位元組,灸,位兀組 元組5 8 c上的資料仍能保留。 疋、,且5 8 b與位 :發明上述清除單一位元組的操作 限於僅清除單一位元組,其他以位元組以卜並不 法,例如清除複數個位元組織抹除步:雁=作方 之方法,本發明不限於此。 白可應用本發明 由於上述讀取記憶體、暫存記憶體以 個別操作方法係為熟悉此記憶者所已知,己憶體的 故本發明不在此The state is unprogrammed, and since it is read, the byte is also :J is, so 'whether or not its state is restored': 2 state.俅1 indicates no data, therefore, the data on the above steps 100, 102 and 10 58a will be erased, while the other bytes, moxibustion, and the information on the group 5 8 c can still be retained. .疋,, and 5 8 b with bits: the operation of the above-mentioned clearing of a single byte is limited to clearing only a single byte, and the other is not in the form of a bit, for example, clearing a plurality of bits to erase the step: geese = The method of the invention is not limited thereto. The invention can be applied to the present invention because the above-mentioned read memory and temporary memory are known to those skilled in the memory by the individual operation methods.
1289309 案號 92116012 曰 修正 五、發明說明(7) 資述。 利用本發明之操作方法,因此使得字元線驅動器係連接多 個位元組的結構,可具有消除單一位元組的功能。如此, 由於單一字元線驅動器可由多個位元組分享,可減少晶片 尺寸,也改善習知要消除單一位元必須在每一位元組上製 作一個字元線驅動器,因此而增加晶片面積的缺點。 如熟悉此技術之人員所瞭解的,以上所述僅為本發明之較 佳實施例而已,並非用以限定本發明之申請專利範圍;凡 其它未脫離本發明所揭示之精神下所完成之等效改變或修 飾,均應包含在下述之申請專利範圍内。1289309 Case No. 92116012 修正 Amendment V. Description of invention (7) Capital. With the method of operation of the present invention, the word line driver is thus connected to a structure of a plurality of bytes, and may have the function of eliminating a single byte. In this way, since a single word line driver can be shared by multiple bytes, the size of the wafer can be reduced, and the conventional method of eliminating a single bit must make one word line driver on each byte, thereby increasing the area of the chip. Shortcomings. The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention as defined by the present invention; Modifications or modifications are intended to be included in the scope of the claims below.
第12頁 1289309 _案號 92116012_± 圖式簡單說明 曰 修正 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與較佳實施例 能更明顯易懂,請輔以所附圖式,其中: 第1圖所繪示為一般可電除且可程式唯讀記憶體(EEPR0M) 的結構上視示意圖; 第2圖所繪示為一般快閃記憶體的結構上視示意圖;以及 第3圖所繪示為根據本發明一實施例,應用於非揮發性記 憶體中以位元組為抹除單位之操作方法的流程示意圖。 【元件代表符號簡單說明】 10 非揮發性記憶體 12 位元線 14 字元線 16 位元 18 位元組 20 字元線驅動器 50 非揮發性記憶體 52 位元線 54a 字元線 54b 字元線 54c 字元線 54d 字元線 5 8a 位元組 58b 位元組Page 12 1289309 _ Case No. 92116012_± BRIEF DESCRIPTION OF THE DRAWINGS MODIFICATION [Simplified Description of the Drawings] In order to make the above and other objects, features, advantages and preferred embodiments of the present invention more obvious and obvious, The figure, wherein: FIG. 1 is a schematic top view of a generally erasable and programmable read only memory (EEPR0M); FIG. 2 is a schematic top view of a general flash memory; And FIG. 3 is a schematic flow chart of an operation method for applying a byte as an erase unit in a non-volatile memory according to an embodiment of the invention. [Simplified description of component symbol] 10 Non-volatile memory 12-bit line 14 Word line 16-bit 18-bit 20-character line driver 50 Non-volatile memory 52 Bit line 54a Word line 54b Character Line 54c word line 54d word line 5 8a byte 58b byte
1289309 案號 92116012_^ 月 曰 修正 圖式簡單說明 5 8c 位元組 6 0 a 字元線驅動器 6 0 b 字元線驅動器 6 0 c 字元線驅動器 6 0 d 字元線驅動器 1 0 0 步驟 1 0 2 步驟 1 0 4 步驟1289309 Case No. 92116012_^ Monthly correction diagram Simple description 5 8c byte 6 0 a Word line driver 6 0 b Word line driver 6 0 c Word line driver 6 0 d Word line driver 1 0 0 Step 1 0 2 Step 1 0 4 Steps
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