TW200428400A - Operation method to erase one byte for non-volatile memory - Google Patents

Abstract

An operation method to erase one byte for non-volatile memory is disclosed. A non-volatile memory, comprising a word line having a plurality byte and a word line driver connected with the word line, is provided. A byte is selected, which would be erased. First, the storage states of all bits of un-selected bytes located at the same line with the selected byte are read and stored at another memory in system. Then, high voltage is forced on the word line through the word line driver, and data in all selected and un-selected bytes are erased. After, data of the un-selected bytes, which stored in the other memory, are re-written into the original bytes. Therefore, data of the selected byte is erased, and data of the un-selected bytes are remained.

Description

200428400 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to non-volatile memory technology, and particularly to # _ erasing memory with byte (Erase) ) Unit operation method. [Prior technology] Lu Jiyi body can be divided into two categories: volatile silisome memory (Volatile Memory) and non-volatile memory (Non-vol at i le Memory). Among them, the data in the volatile memory may be due to the disappearance of power or magnetic field interference, etc. ~ the stored data disappears or is damaged, such as dynamic random access memory (DRAM) and static random storage memory ( Static Random Access Memory (SRAM) are volatile memories. As for the characteristics of non-volatile memory, it has a "memory" function. Even when the current is turned off, the data stored in the memory will not disappear. Among them, non-volatile memory can be roughly divided into several types. Read Only Memory (ROM) and Flash Memory (Fiash

Memory), such as reticle read-only memory ("% ROM"), one-time programmable read-only memory (OTP ROM), erasable and programmable read-only memory (EPROM), removable and programmable Program read-only memory (EEpROM), flash memory and multiple programmable read-only memory (MTp ROM), etc. Among them, EPROM, EEPROM, and flash memory can be written multiple times However, when erasing data, EPROiUlj must be pulled out of the system and placed in ash; the data can be erased for dozens of minutes under ultraviolet light. When EEPROM is used, it only needs to be controlled by its memory unit. Appropriate negative electricity $ on the gate can reach

Page 5 200428400 V. Description of the invention (2) The effect of erasure does not need to be removed from the system. $ Is similar to EE compensation, but also erases data electronically. The biggest difference is that it erases data block by block (BlOck by magic method, EEPR0M uses Byte as ^) = Erase the data. The top view of the structure of the non-volatile memory of the non-volatile memory, which can be read or written by the user, and can be programmed to read only (eep li), and shown in FIG. 2 is, for example, a flash. A schematic top view of the structure of the non-volatile memory of the memory. Please refer to FIG. 1. The non-volatile memory i in the X direction has a number of bit lines 12 and a number of Y lines in the Y direction. Character line (w〇rd

Line) 14 and the position of bit "" at the intersection of bit line 12 and word line 14. Since bit 16 has only two states of 1 (representing a path) and 0 (representing an open circuit), it is more suitable for applications. It is inconvenient, so it is reorganized into a new unit, called a byte (Bite or Byte) 18. Similarly, referring to Figure 2, the non-volatile memory 50 has several bits in the χ direction Line 52, and several character lines in the Υ direction, such as character line 54a, character line 54b, character line 54c, and character line 54d, etc. A number of bytes, such as bits, are connected to the character line. Bytes 5 8 a, Bytes 5 8 b, Bytes 58c, etc., and each Byte is composed of 8 bits 56 respectively. In the structure of Figure 1 and Figure 2, the word The element lines are segmented by word line drivers (for example, word line driver). For example, the character line driver 20 in FIG. 1 and the character line driver 60a and character lines in FIG. Driver 60b, word line driver 60c, word line driver 60d, etc. The main function of these word line drivers is to provide high power through the word line driver. To select characters

Page 6 200428400

On-line, to perform Yuanji loose ^ α & work, while others are not on-line, data erasure (―) yuan, no on-line is given to high-voltage characters online, and the EEPR0M structure spot of Figure 1 often. The difference between the structure of the flash memory in Figure 2 and the flash memory in Figure 2 is that the number of bytes connected to the sub-70 line driver 5 | included in &. In JL, in the EEPR 0 Μ structure of the picture, prepare —. Cry, and 箆 2 n 蚯 卩 ^ is more than a byte, which is connected to a word line driver ^ ^ in the memory structure, a page (Page) The byte is divided into a sub-line driver. Therefore, this is why when the data erasing step is performed, the flash memory system erases data in units of blocks, and eepr0m uses bytes as units. "

Because the two non-volatile memories have different erasing units, they can be applied separately as needed by the product. However, due to the current development of electronic products in the direction of reducing the size and increasing the memory capacity, the EEpROM product department because each byte is connected to a word line driver, the area of this word line driver is the same as a single The size of the byte area is similar, so '·· reduce its product size again. Tian Yiyi [Content of the Invention] In view of the fact that EEPROM products have a size reduction problem due to the structure of the word line driver ', the purpose of the present invention is to provide a method, = ^ = the structure of a word line driver shared by each byte , And make it possible to erase in units of = tuples, and reduce the size of the memory by reducing the word line driver. π H ′ According to the purpose described above, the present invention is applied to non-volatile memory,

200428400

The byte data erased by using the byte as the erasing unit is driven by the character line to the temporary data in all the bits on the meta line. The operation method of reselecting the unselected bit position includes:, and The actuators stored in the system 'provide high voltage to the group's material erase. After that, it is newly written in the original group state of the word line. First, the read is not selected in another memory. Connect to the character line, and then place this' into another memory location, in a restorative memory product, and it is easier to shrink its size. When the above method is applied to non-volatile, it can have a bit The erase function of the unit is small and small. [Embodiment] (The present invention discloses a non-explained embodiment in which bytes are erased and a plurality of bytes are connected and described. In order to make the diagram in the third part of the present invention refer to the following description and cooperate with the Figures 2 to 3 show operations in bytes using bytes as an erasing unit in an entity according to the present invention. The method of non-volatile memory is not limited to the results of Figure 2. Structure仃 Description, but in the present invention, it is assumed that data is stored in non-volatile memory, and a certain byte of data on a page is cleared. The second one wishes to store data in the character line 54a of the neutral memory 50 "Niu Lie, non-volatile ..., byte 58b and byte 58. Etc: =: For example, it happens to be in the byte and then, hopefully the word 200428400 V. Description of the invention (5) Yuan line 5 4 a Bytes on this page 5 8 a Data erasing. First, perform step 100 of the present invention to read and store other unselected erases that are in the same character line as the selected bytes. Byte data 'For example, since in this embodiment of the present invention it is desirable to combine the character line M ^ in this page The data of byte 58a is erased. Therefore, in step 100, the data and data of the stomach of other bytes not selected for erasure in the same character line as & ^ byte 58a are read. That is, read the byte 58b and byte 58c on the word line 54a, and copy these data or status to another memory in the system. Bits are stored with data, and the basin can contain the state of 0 or 1. When the data is temporarily stored in another memory; I can completely record each bit state in the bytes that have not been selected to be erased In the same way, it is not necessary that every unselected byte contains data y # 进 ^ 料 TEMPORARY STORAGE ㈣step_〇 You can only select data in the unselected erased byte ' Reading and storing may not include all unselected bytes. Regardless of the program, the father reads it first and stores its status and data separately. Another memory is used to temporarily store the bit. Tuple data, volatile memory or other non-volatile notes: Temple, the invention is not limited to this. K ' Step 104: Via the character line and 1 character \ example, the above-mentioned selected byte 58 & is located on the sub-line W, and the character line 54a and the character line drive are referred to as "^ bit" ^

Page 9 200428400 V. Description of the Invention (6) I—I. The moving voltage causes the voltage to act on the word line 54a via the word line driver 60a. Therefore, regardless of whether or not all the bytes, packets or bytes 58a, bits of the data are selected to be erased on the word line 54a, Tuple 581 ^ and bit 58. Etc., the data on it has been erased. After that, go to step 104 to write the temporarily stored unselected byte data ':: into the word line' to restore its original state. In other words, ^ Ύ and 本 are stored in another memory, and the temporarily stored byte 5 8b and the data of the bit Λ are rewritten into the same position of the character line 54a. That is, the data located on byte 58b is re-occurred in byte 58b, and the data originally located on the heart of byte 5 is re-occluded in byte Me. Another example is that there is no data on it, then its status is temporarily stored as unprocessed (after reading, there is no data on the 'byte', so it is not sure whether to restore its state, and so will the same. In step 100, step 102 and step 4, the data on the shell 58a will be erased, and the other bits :: After step 104, the data on the bit group 58c can still be retained. , And 58b and bit The above-mentioned operation of clearing a single byte of the present invention is really limited to clearing only a single byte, and the others are in bytes, not J: For example, if a plurality of bits are cleared, the erasing step is :: Method, the present invention is not limited to this. "The application of the present invention is because the above-mentioned read memory and temporary storage memory use individual operation methods for those who are familiar with this memory. ^ ^ ^ Memories are redundant. Therefore, the present invention is not here. This makes use of the operating method of the present invention to make the word line driver system more connected.

200428400 V. Description of the invention (7) The structure of bytes can have the function of eliminating a single byte. In this way, since a single word line driver can be shared by multiple bytes, the size of the chip can be reduced, and the knowledge is improved. To eliminate a single bit, a word line driver must be made on each byte, thus increasing the chip area. Shortcomings. As will be understood by those familiar with this technology, the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. 200428400 Brief description of the drawings [Simplified description of the drawings] In order to make the above and other objects, features, advantages, and preferred embodiments of the present invention more comprehensible, please supplement the drawings, in which: Figure 1 is drawn Shown as a structure that is generally removable and programmable read-only memory (EEPR0M) > is not intended to be structured, FIG. 2 is a schematic diagram of a structure of a general flash memory as shown in FIG. 2; and FIG. 3 is shown According to an embodiment of the present invention, a schematic flowchart of an operation method applied to a non-volatile memory using a byte as an erasing unit. [Simple description of component representative symbols] || 10 Non-volatile memory 12-bit line 14 Word-line 16-bit 18-byte 20-word line driver 50 Non-volatile memory 52-bit line 54a Character line 5 4b character line_ 54c character line 54d character line 58a byte 5 8b byte

Page 12 200428400 Schematic description 58c byte 6 0a character line driver 60b character line driver 6 0 c character line driver> 6 0 d character line driver '100 step 102 step 104 step 1111 · 13 page

Claims (1)

200428400 VI. Scope of patent application1. An operation method is applied to non-volatile systems where the -memory system includes up to one; -in memory, at least -the -bytes at least two second :: line : It is located on the character line ^ /, Yu Xidi a group, and a sub-line driver connected to the character line. The operation method includes at least reading the "data" of the second byte and Stored in the character line driver, providing a Gulei repute z z mouth body armor A honey-7? Return voltage on the character line, thereby erasing the first 70 groups and the first The data of the two bytes, and read the continuation 位于 ^ ^ ^ ^ "the 4th frame of the body T, and re-write the sub-line 70 in the first hidden body" In the second byte, the operation method as described in item 1 of the patent application range, wherein the memory system is selected from non-volatile memory and volatile memory. The operating method described in item 1 of the profit scope, wherein the above-zero -0, ...,, can be removed and programmable read-only memory (EEPR0M). 4 "As described in item 1 of the scope of patent application, the Douji 5 system is a static random storage memory (SRAM). VIII; The method of operation described in item 1 of the 5th Century Scope, wherein the above-mentioned ° system includes both programmed and unprogrammed parts. ^ A method for erasing C memory data Provides a first memory, wherein the first memory includes at least: a memory including at least 200428400 6. At least one character line for patent application; at least one first byte with a first data is located on the character line; at least one second byte with a second data is located on the character line; And a character line driver connected to the character line, reading the second data of the second byte in the first memory, and storing the second data in a second memory; via the character line driver, Providing a high voltage on the character line, thereby erasing the first data in the first memory from the first data and the second data of the second byte; and reading and storing in the second The second data in the memory is re-written into the second byte on the character line of the first memory. 7. The data erasing method of the memory as described in item 6 of the scope of the patent application, wherein the second memory system is selected from non-volatile memory and volatile memory. 8. The data erasing method of the memory as described in item 6 of the scope of patent application, wherein the first memory system is an erasable and programmable read-only memory (EEPR0M). 9. The data erasing method of the memory according to item 6 of the scope of patent application, wherein the second memory system is a static random storage memory. Page 15 200428400 VI. Patent application scope 10. The method for erasing data of the memory as described in item 6 of the patent application scope, wherein the character line of the first memory above includes at least one third without data. Bytes. ❿ Page 16