TWI289306B - DRAM with half and full density operation - Google Patents

Abstract

Methods and apparatus for operating a memory in a half density or a full density mode, and switching between the modes when required. A memory device defaults to half density operation upon startup for lower power consumption, and switches to full density operation when the lower addresses are full. When the upper addresses are once again empty, the devices switches back to half density operation.

Description

1289306 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates generally to memory components, and the present invention relates in particular to dynamic DRAM (dynamic rand_access memory) and its operation. [Prior Art] Dynamic Random Access Memory (DRAM) can be configured to be half-density or full-degree in a full-length memory, and each internal column of a memory array is allowed-memory unit (4). Access, and each unit can be used to store the data of the unique bits. In half-density memory, each internal column is paired with another complementary column so that when the data is stored in a memory cell, the complementary data is stored in the complementary column. In half-density memory, the two-word line system simultaneously causes n to be a - digit line and one to be a digit line * (the complement of it). The mverted data is in each unit, and one of the interfaces is used by the old W 1 + Μ as the differential model; a “degree of § memory. a full density operation of a memory” The full extent of the use of the unit, and therefore more storage of the comparable size of the semi-density memory ... save its own individual data, and the early storage and update time. Adding to the current technology for individual updates, the method relies on parts such as memory. By 乂, 々 update time. And 曰 ^ ^ ^ 乂 my update - in the half-degree 兄 忆 忆 之 之 之 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低 较低: and the battery life for portable devices has been extended. The detachable device is often "without a large amount of memory", especially in:

Most of the normal operation mode + to R m. However, some agricultural systems may occur to use the memory of the eve of the day's and therefore require full-density memory, although "it is not always necessary. Apricot 且 而 要 岔 岔 岔 岔 记忆 记忆 运 运 运 运 运 运 运In some cases, it is not necessary to enter the hexagram, and the components and devices of Wang Xiong and the memory are not required.

The consumption is high, and for the right PP t counterpart, limited battery power, the full-time operating system is relatively unvoiced, and the road # 4 "

" And v causes shorter battery life and similar. From portable applications to more powerful portable applications like portable computers and the like, some applications require a larger amount of memory, but they still have power limitations. "Memory systems are typically configured to be half-density or full-density and are immutable. For the above reasons, and for those skilled in the art, read the following: Other reasons for this description will become apparent. There is a need for a memory component and a method of operating a memory, which is a benefit of combining half density and full density operation. SUMMARY OF THE INVENTION The above problems and other problems are solved by the present invention and will be borrowed. It is understood by studying the following description. In one embodiment, a conversion between a full density and a half density mode of a memory operation, the present sentence includes: also 仏a 佚 I 居 匕 匕 匕The starting memory operates in a half density mode; and, in the half density operation, the memory system is switched to full when the half density is no longer able to store all the data to be written to the memory. Density mode 8 1289306 is included in one embodiment, a method of operating a memory component is included. The initial memory operates in half of the memory cell. The usage rate; and ~: 2: The array of the switch is switched from the semi-poor production model h to the § 忆 体操 体操 体操 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 作为 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至 至丨 Φ recall unit, bean can be: ~ memory system includes: - array of records;: part of the data and transfer the data to the array; and, - memory control: 4 body control system operation of the memory A full ~:""-operator' and when the half-density operation does not have enough about ::::: it is to be written to all the data of the memory from the semi-dense;: Known to switch to full density Mode operation. And in another embodiment, the processing system includes: - processing crying. Then, it is connected to the processor to store the poor materials supplied by the crying and provide information to the clinic. Lu, + to 4 to deal with theft. The memory system includes: -: a memory unit, which can be addressed by an address circuit; a circuit '(4) to receive external data and transmit the data to a queue-memory controller. The memory controller is operated in a wide density or - half density mode, and when semi-dense;::: all has sufficient density to accommodate all of its resources to be written to the memory. + Density mode operation switches to, full density mode operation #. Other embodiments are described and claimed. [Embodiment] The following detailed description of the present invention refers to the description of the drawings, and the present invention is applicable to: the accompanying embodiment 1289306 is shown as an explanation. In the drawings, like reference numerals are used to refer to the embodiments of the present invention. The embodiments are described in detail to enable those skilled in the art to practice the invention. The use of the structure, the logic, and the k-system of the electrician can be made without departing from the scope of the present invention. Therefore, the following detailed description is not meant to be limiting, and the scope of the present invention is only The scope of the appended claims is defined by the scope of the claims, and the scope of the application of the invention is defined by the scope of the claims. FIG. 1 shows an embodiment of the present invention as a structure of a full-density memory 100 that can be implemented thereon.愔鲈 愔鲈 〆 〆 苒 脰 脰 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 1 The location of G6 is as shown in the figure. 1 〇 4 mast! # -Γ 士竹 幻幻U, "Ding 106 series can access eight units, each of which is to save the data of individual pieces (piece). And also 丨 a 士. , 牛例吕, celebrity actuation unit 〇, 〇, Lennon and lineage actuation. The second embodiment of the present invention is a structure of a half-length 纟 忆 2 2 2 每 每 每 每 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。兮录士备 再°Hai structure is dedicated to the structure of the memory ,, but the addressing is only τ η , the wood is only different. The memory 2 包含 system includes the same array of memory cells 2 〇 2 ' each of which contains a transistor and a capacitor, which is determined by the individual internal column 204 and the internal row, half-degree "Have memorize 200, each column is paired with a complementary column 'that is: there are two 歹" and two 歹". For example, to activate the unit 〇, 〇, 琴-χϊ χϊ fewer columns Q, and line 0 system actuation. This life is stored in the opposite direction of the poor side of the party \ stay -, where 〇, 〇 and 〇, 0 *. No odd columns are used. 8 8 1289306 Gray In the embodiment of the present invention, a memory system having the same structure as the above-described memory 1 and 2 is used, but the memory operation system of the memory is operable to be half density memory. Body or a full density record ^ Hongvision period! Depending on the application. This operation is accomplished using a memory controller to operate the memory in the manner described below. In one embodiment 300, shown in the flowchart of FIG. 3, a memory power-on (p〇wer ΡΚ·τ' is generated in block 302. In this embodiment, the operation of the memory is at block 304. m is set to the half-density (or 2Τ) mode as the pre-set. It should be extravagant. The same as the one of the half-density presets (for example, full-density operation) can also be set without deviating from the present invention. In the box 3%, a single address is provided to the memory controller or the like, and in decision block 308, "determines whether the location is an odd internal column. If the address is not an I The number of internal columns 'that is, it is an even internal column, then the method flow is the continuation, block 310, in which any even (half density) internal column is accessible. A six-bit address is provided in this way, filled Or use even internal columns until an odd internal column is accessed to decision block 3〇8. At this point, in block 312, the operating system switches to full density (or 1Τ) mode, and any internal column can be Access to block 314. Again, the white line follows ^ #者η我The new order (1) is called) ", adjust the power of the adjustment, so that the update operation occurs in the appropriate -a.). Set the system to the minimum effective 0 (10), the internal column to help: a point, in the whole The operation mode of the density mode will no longer be needed. Thus "method 3 continues to check for any odd number 8 9 1289306 for decision block 3 16 : the partial column is (four). If the odd number (4) and (4) are still (4), the operating system will continue to be in the full density mode, and the method will continue to be the address of block 317. When there are no more odds within the update operation, the method flow is performed before proceeding to block 3〇4.

When two full-density operations are returned to the half-density operation, the ::2: in the odd-numbered column may be no longer needed. The data is deleted when the half-density operation is repeated. 'Because the writer program is used to activate the even-numbered line, the data is sensed by the == device (which is the correct source), and then complemented. Odd number group line of even digital group lines. When the sense is amplified: "moving, and rewriting it as any binary day existing in the odd column unit, the inversion of the data stored in the even column unit is in the odd column nt! full density to half density In the conversion, the data in the even series is included: but the data in the odd series is discarded. In one embodiment, and the first = is made to retain the data in the odd column. For example, t, applied to In the configuration shown in Fig. 2, when switching from semi-density to full-density operation, 〇, 〇 系 becomes (M column. χρ 广 - In one embodiment, the operating system or memory controller system ^ stays in it Provided to the memory before being written to the appropriate

When U 0 rolls 77 and A field are changed from full density mode to half density mode, some data from odd internal columns are left in one embodiment. The data is stored in a buffer, #^接接在一刷Write to an even number of 丨J before going to the update operation. In the other embodiments, the decision to keep the data from the odd columns is based on row by row or even block by block (289306 block). • Ten opponents, half-lifted and written to the memory and t, the job memory controller is used to place the data in the position corresponding to the operation mode, that is, one of the complementary columns instead of the replacement For the basin only, and the right squad, there is a fine 乂4, the cutting system starts in the half 3, degree mode, and the pair of odd/even columns is only 〇tttf ^t〇^^(full)Bf , If it is logical, it may go to the evening of the ear. Ear: The full day of this person... Does the component still need more memory?---Coherable column write. Once an odd-numbered column is written, the job or memory controller, or its monitoring data, is one of the write locations of the memory. There is no data loss from semi-density and = change to Wang Song degree' because all of them are based on the elimination of redundancy created by semi-density operations. At some point, the component can also have a reduced density requirement. When the required density drops below a threshold for half density operation, the 2 memory system switches back to half density operation to save power consumption. If the core remembers: the data that is initially written to the lower address column (the half density column and then the switch back to the half density operation) is only for the system: during the density operation The data of the entrant. In one embodiment, the switching of the 炙 山 阼 不 不 不 不 , , , , , , , , , , , , , , , , 口 口 口 口 口 口 口 口 口 口 口 口 口 口 口 口 口 口 口 口Contains a flow chart that retains information in the even internal column when converted from full density I back to half-initial operation, and is shown in more detail in Figure 4. In one embodiment, the even-numbered group 8 11 1289306 is a line system. Actuated at block 400, the data for their even digital set lines is sensed by the sense amplifier at block 4〇2, and after the sense amplifier is stabilized, the oddit word line is actuated to the square &; 404. & data is the original data stored in the even = part of the column. When the sense amplifier is activated in semi-density operation, the inversion of the data in the even internal column is stored in its original odd = part of the column And now it is for each even internal column. The list is best shown in Figure 2. The two-character line is pre-charged in the block,:: The beginning data is stored in the main unit and the complement is stored in the complementary single-like 'as in Normal half-density operation. In one embodiment, the refresh-system unique command is swiped. In another embodiment, the brush-out update is any during the operation from a half-density mode of an earlier operation. The same command used in the work. In another embodiment, the memory usage rate is =, and when the usage rate drops to a level that is sufficiently lower than the half-use rate:守': Recall that the system then switches back to the half-density operation. In this embodiment: some lean systems can exist in odd numbers, ^ 1 shellfish must be rewritten in even internals before the cut..., density operation Column.

= In this case, in the example, the operating system is the placement of the monitoring data, and when the operation is changed from the full man to the semi-period. The A data is read in - buffer = two is the one to be deleted. Listed, You Chong ☆ or similar, and then written in its ruling Jiang in the operation to switch from the whole poor ^: ', eight H ± mountain to + 而 degrees for reservations. This kind of knowledge and speaking buy/write operation is also an embodiment. When the [blocks are based on other operations, the memory system of the present invention functions as follows. The memory 12 1289306 = a preset operation starts at startup. In one embodiment, the pre-open operation is a half density operation. At startup, the g body is operated at half density. In this embodiment, only the even columns are in the read and body functions, and the odd columns of the array are used as is known to those skilled in the art. Writing to the DRAM is done at an even number ^' when the density is required to exceed the half density of the memory. The control program for the memory is monitored by the address written to the address of the odd-numbered address, and the memory controller switches the operation of the memory to a full-density operation, and doubles the memory. The density. When only half density is required, the power consumption of the memory is lower than the package power consumption of a full density operation. However, when the demand for memory is more than half the density, a full density operation is used and the increased capacity is available. The memory controller also monitors the density of the memory and uses the knives to switch to a full-density memory. Since the > beaker is written or stored in the memory, when the half-density operation is for the memory, the time will come. At this time, the memory control system determines that the last odd-numbered data address is no longer needed, or is determined to be targeted; "the memory state density of the current state of the memory is less than one° ° Once this decision is made, the memory controller switches back to half density. As described above, when switching between full density operation and half density operation, the data stored in the countable column will be lost. Therefore, the operating system or the memory system is to monitor the address of the data to be written to the memory so that it is. When the L' version is used for half-density operation, only the half-density operation system is used for 13 1289306. As discussed, there is no structural difference between a typical full density and a half density physical layout. The difference between full density and half density modes is based on the logic and control of the memory. Embodiments of the present invention utilize logical shifting to allow for half density operation when lower power and less memory density are desired or needed, and allow full density operation when higher density storage is needed as needed. In another embodiment, a mode register is utilized to drive the memory to a normal or half density operation rather than turning the power on in a half density mode of operation. For example, if a system is written to the mode register, the operation is forced to full density. If a 1 is written to the mode register, the operating system is forced to half density. Setting this mode register can be "dynamically (〇n-the-fly)" achieved during operation, or when power is turned on or the like. Moreover, a particular "reset" command can be initiated by the user to force operation to full or half density mode. If half-density operation is not feasible, the monitor used in the memory controller or operating system is not allowed to operate at half-compact until the amount of data to be stored is suitable for one-half density configuration of the memory. In various embodiments, setting the full density operation is accomplished by setting the mode register with a mode register setting command, a dedicated input pin, or the like. In another embodiment, the operation is preset to a half density operation at startup and continues to a half density for as long as possible, and switches to full density when an odd column is accessed. The provisions for even and odd columns are used in the description of this document. It should be understood that 14 1289306 is: the other terminology for the rate - the only columns with odd-numbered systems and the even number of hunters are ^. The columns that are available for full density are odd columns. J can be an even-numbered column and is by way of example and not limitation.) The term includes: oblique ' 仅 his term (column only, sub-lower sub-column (lower) one for gray-corable upper-level (upper) column A memory controller or other device will be used for the operation of one computer and two memory devices. The controller or operating system can: = media, It is the implementation of the instructions in the processor - or the like to achieve the method described herein. ^ Figure 5, a simplified block diagram of (10), such as two, ^ 500, of the embodiment of the present invention is described. The memory component can be a two-way data communication. The memory system includes a memory cell array 512. The control circuit 524 provides a response signal from the processor 540. The management data is stored and manipulated from the array. The address circuit 526, the χ decoder 528, and the γ decoder 530 analyze the address 542 and the storage access location of the array. The sensing circuit 532 is used. To read the data from the array and the pure output data to U0 circuit 534. This 1/ The 0 circuit operates in a bidirectional manner to receive data from the processor 510 and to pass the data to the array 512. Note that the sensing private path may not be used to store input data in some embodiments. The system is well known and will be understood by those skilled in the art. The above-mentioned dram is a basic understanding that has been simplified to provide DRAM technology and is not intended to describe all the features of a DRAM. The data to the even series is written in 15 1289306. The system has been described in this paper. It should be understood that it is appropriate to operate the data in the + density to the odd-numbered column. Only A is used. As long as the data is used by some of the cows in the system, one can use one of them: some odd-numbered columns are: the available memory low-numbered ones are used to make the power consumption of the half-density operation lower: low Power saving, it only appears. Moreover, the full-density memory system can return to the lower half of the memory

Advantages of various embodiments of the present invention include the fact that a reduced amount of memory is automatically provided for use when needed. Moreover, to the semi-male, the operation is not lost to the memory array. The inventions that are not invented have a limited amount of power available for use in 1, ^ and such as • portable 2:: or personal digital assistants. In one embodiment, the 7 series can be stored in the lower memory array and the memory is placed in the standby mode or the startup mode to operate in the half density operation: 曰 "The wide data system can be stored in the full array during operation. The data device is thrown and the memory is returned to the standby or sleepy common underlying power state for the ^J J granular presentation without losing any application data. Embodiments of the present invention include - configurable The memory (in the case of a DRAM), 1 automatic cut * into the enterprise, the power of the automatic switching party; ", the degree of low-power operation between the knowledge of the 'for the increase required by the system density. Also for the disclosure: the method of returning from memory to semi-density operation, for self; 16 1289306 new power savings without losing money The memory system with its lowest self,] data. During the power-on period, all operations are in an even internal column: power is preset to half-density operation. stop. The memory system maintains until all even internal columns are fully accessed, at which point the operation is performed until an odd internal column is a memory operation. Therefore, the self-automatic conversion to normal full-density power is adjusted. The sequence of the sequence is reset with the full density operation when the sequence is reset or if the memory is returned to the half density operation: :, : added as desired and converted to maintain it as the initial application for semi-dense: update brush The operating system is added to the material. According to the present invention, the brush of the X-think is stored in the even-numbered column, and the updated embodiment of the brush line is sensed. The sense of the sense amplifier is I ^ 〇 - the even number is in the sense amplifier. Afterwards, the correct original data is actuated. The data is in the unit pre-1#~number, and the line (so the automatic health is reflected in the main..., the two-character line; and the 'original asset' , the main early and storage complementary ... for the half-density operation required., d as early as for the artist's example has been illustrated and described in this article, familiar with this technique can be an alternative ^ is: estimate to achieve the same purpose Any configuration is a specific embodiment of the invention: this application is intended to cover this month <any modification is limited only by the scope of the patent application and its equality ^ [simple description of the schema] A partial circuit diagram of a full-density memory component; a partial circuit diagram of a half-density memory component; 17 1289306 Figure 3 is a flow diagram of a method in accordance with one embodiment of the present invention; Another implementation in accordance with the present invention A flowchart of an update brushing operation; and Fig. 5 is a block diagram of a system implemented therein. [Main component symbol description] 100: Full density memory 102: Memory unit 104: 歹丨J 106 : Line 200 ··Half Density Memory 202: Memory Unit

204 :歹丨J 2 0 6 : Line 500 : System

502 ·· DRAM 5 1 0 : processor 5 1 2 : memory cell array 524 : control circuit 526 : address circuit 528 : X decoder 530 : Y decoder 5 3 2 ·• sense circuit 534 : I/O Circuit 8 1289306 5 4 0 : control signal 542: address signal

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Claims (1)

1289306 4 ...........I _IM|, ......................... Month and repair (more) 1. A method for operating a memory component, comprising: in a half density mode, only writing data to an even number of internal even columns is full; within a number M, until all of the odd internal columns are first accessed Switch to full density mode; write to any column in full density mode; switch to back to half density mode when there is no odd number listed as needed, switch back to half density mode: The remaining raw data is written to write all remaining beakers to the even columns of the memory; and the update is swiped. 2. The method of claim 1, wherein the updating comprises: actuating an even digital group line containing half density data; sensing the data by a sense amplifier; Actuating an odd digital group line; precharging the two word lines; and storing the original data that has been organized on the even number line and storing the complementary data on the odd number line. Among them, the organization data system 3 · The method of claim 1 of the patent scope includes: determining what data from the odd number column will be stored; storing the data stored from the odd number column in a buffer; and σ 1289306 Before the update is swiped, the stored data is written from the buffer to the even column. 4_ As for the method of applying for the patent range, the information from the odd number of shirts will be stored in a column-by-column (four) kiss basis. 5. The method of claiming the patent range, wherein it is determined that the material from the odd number 歹J will be stored on a basis of _ block by block. / · For example, the method of applying the patent range No. μ, wherein switching to semi-closed, 更, and ^ 3 changes the self-renewal timing of the memory for the half-push operation. The method of the first aspect of the patent scope of the patent, switching back to the semi-density mode further comprises: monitoring the usage rate of the memory component; and storing all the data to be stored in the memory in the 7G piece of the hidden body In the case of a half-density configuration, the start switches back to the half-density mode. 8. A memory comprising: an array of memory cells, which may be addressed by an address circuit; an input/output circuit 'which receives external data and transmits the array, and:: a memory controller 'It is used to operate the memory at a full density operation: one of the operations of the town type', the memory controller is a method of yoke deficiency, the method includes ·· 〆, ^ ··· ι- ^ .··*' 21 1289306 * ^ Switching from the operation of the half density mode to full density when the half density operation is not sufficient to accommodate all the data to be written to the It body The operation of the 杈 type, and when there is no odd number listed as still needed, switch back to the half density mode, wherein switching back to the half density mode includes: ^ The original data remaining in the organization memory component to all remaining The data is written to the even columns of the memory; and the update is swiped. _9. The memory of claim 8 wherein the memory component is part of a processing system, the processing system comprising: a processor coupled to the memory for storage by the processing Information provided by the device and provided to the processor. 10. The memory of claim 8 wherein the updating brush comprises: actuating an even digital group line containing half density data; sensing the data by a sense amplifier; _ actuating a An odd number group line; pre-charging the two word line lines; and storing the organized original data on the even number group line and storing the mutual data on the odd number group line. 11) The memory of claim 8 of the patent scope further comprising: a buffer; and wherein the organization of the data in the method comprises: determining what data from the odd number column will be stored; 22 1289306 ^ f stores the stored data from the odd-numbered column in the buffer; and writes the stored data from the buffer to the odd-numbered column before an update is swiped Even columns. 12. In the case of the memory of the scope of the patent application, in which the data from the odd-numbered series is determined to be stored on a column by column basis (r〇w by r〇w). 13. If the memory of the third paragraph of the patent application is applied, the information determined from the odd-numbered columns will be stored in a block-by-block basis. 14. The memory of claim 8 wherein switching to the semi-density mode further comprises: changing the self-renewal timing of the memory for half density operation. For example, the memory of claim 8 wherein switching back to the half density mode further comprises: N _ monitoring the usage rate of the memory component; and storing all data to be stored in the memory in the memory When a half density configuration of the memory component is configured, the startup switches back to the half density mode. Eleven, circle: as the next page 23