TWI288248B - Electrical scanning probe microscopy device - Google Patents

Abstract

The present invention provides an electrical scanning probe microscopy device. The microscopy device includes an atomic force microscopy device using a long wavelength laser light source as a surface image formation architecture to obtain a surface profile image, and an electrical scanning detecting sensor for simultaneously obtaining a two-dimensional electrical image corresponding to the surface profile image.

Description

!288248 Case No. 9211Qm^ V. INSTRUCTION DESCRIPTION (1) Technical Field of the Invention The invention relates to a micro-mirror device, in particular a mirrored electrical scanning probe. The invention relates to an electrical scanning probe for a combination Long-wavelength laser atomic force microscopic micromirror device. Prior Art: Scanning probe micr〇sc〇py, an extremely versatile surface analysis technique that is easy to operate, and provides information on the surface properties of materials such as hardness and b flatness. The three surface morphology and the electromagnetic field strength, etc., the information obtained has the advantages of large range, 咼 resolution, etc. The application of various scanning probe microscopes is guided by various physical forces between the probe and the surface of the sample to be tested. , including atomic force microscopy (AFM) for observing the surface topography and flatness of the material; power microscopy (e 1 ectri C f 〇rce microscopy, which is applied to the micro-area electrical and object-induced analysis) EFM); scanning capacitance microscopy (SCM); scanning diffusion resistance microscopy (SSRM); scanning Kelvin force microscopy (SKM) and scanning current microscopy (c) 〇nductive atomic force microscopy, C-AFM) 〇 scanning capacitance microscope for tiny electricity The change has extremely high sensitivity, and its application potential in two-dimensional charge fraction analysis is excellent. Synchronous acquisition of surface topography and corresponding differential capacitance image is very important for analysis work. In general, scanning capacitance microscope Mainly includes two major parts: contact

〇522-l〇185TWFl(Nl);jammgwo.ptc Page 5 1288248 V. INSTRUCTIONS 曰 MM 9211QQ1R (2) Atomic force microscope and differential capacitance sensing module. The former is mainly used to provide the image of the topography; the latter provides the two-dimensional differential capacitance image. Conventional electric, scanning probe microscopy is a beam deflection method that reflects the surface topography, and uses a red laser (wavelength of 670 nm) as the deflection imaging architecture of its atomic force microscope system. Obtaining the surface topography image and the corresponding differential capacitance image, the light disturbance effect caused by the stray light of the red laser is used, including the photovoltage effect (ph〇t〇v〇ltaic effect) and the high-order carrier injection ^(high -levei injecti〇n), which seriously affects the measurement results, makes the differential capacitance image contrast worse, and causes distortion of the carrier distribution and electrical connection, such as wider carrier distribution image and narrower electrical properties. The width of the junction, etc., significantly limits the accuracy of the measurement results, so the removal of optical interference is necessary. Since the optical interference mechanism is caused by the optical absorption of the material, for the low energy gap semiconducting, materials such as SiGe, GaAs and InP, the above problems will be more obvious, and only the patent design can be used to completely solve the surface. The appearance of the laser source of the killing interferes with the electrical signal, and at the same time takes into account the purpose of the surface morphology of the material. Knife Summary of the Invention: In view of the present invention, it is an object of the present invention to provide an electrical sweep. ΪΓ; is a long-wavelength laser as an electrical scanning G surface to outline, to enhance the differential capacitance image pairs;

Take care of, the material and m signal = dry 0522-10185TWF1 (Nl); j ammgwo.ptc page 6 ^ 92119918 曰 ^ 88248 five, invention description (3) According to the above purpose, the first one, including: - atomic force microscope "species The probe microscope surface is silly 靼搂m μ The above 4 uses a long wavelength-correction device laser light source as an electrical sweep detection sensing device, a surface topography image; and a two-dimensional electrical image According to the above purpose, the present invention also provides a brother device, including a sample base. The electrical probe probe micro arm and one of the front ends of the independent cantilever To: device, including - single-long-wavelength laser 弁 * independent of the known probe device 'including the measuring device with &# ^ long-wavelength laser light source corresponding to the laser-detection scanning probe wearing the f ^ - control system device, control valley sensing detection device, clothing return, and a two-dimensional differential capacitance image. The same as the surface topography image. The following cooperation diagram and preferred embodiment To explain the present embodiment in more detail: Figure 1 shows the hair The functional area of the scanning electrical probe microscope is r upCtl〇nal bl〇ck diagram. Here, the scanning capacitance microscopy (SCM) is taken as an example, and the invention is not limited to the invention. Capacitance microscope main package f ^ Most: contact atomic force microscope and differential capacitance sensing module. ^ Mainly use long-wavelength laser light source, such as wavelength greater than 6 7 〇 nanometer, 乂 者 is 1 · 3 or 1 · 5 5 micron, as a surface imaging architecture, to provide page 5, 0522-10185TWF1 (Nl); j ammgwo.ptc

V. Description of the invention (4) Dimensional surface topography image; the latter provides a synchronous correspondence table differential capacitance image. See the first picture, an electrical scanning probe, (J # 〇〇〇200 position. One AC signal source 1 1 〇 and DC bias 12 〇, ^ mouth two two mouth 100 To control the sample to be tested. A scanning probe device is connected to the sample. The θ pedestal structure 300 is composed of a beam 320 located at the front end of the cantilever beam 3, and the other end of the cantilever beam 300 is connected and fixed. Scanning, two f = control device, and the cantilever beam 30 〇 has a long, Tianmu, ten-position: mirror: surface type image imaging device, standing on the scanning probe device force: light source: i J such as wavelength 1, 3 or h 55 micron infrared laser source 400, a long wavelength laser source 420, a long wavelength optical calibration device ". and - Huitian: electric circuit (back) (return circuit) 80 0. The control system device 7〇〇 controls the movement position of the sweeping device and the height of the scanning probe device, and the field scanning detection sensing module 50 0 (for example, a capacitive sensor) and a lock-in amplification device a 〇 ck-in anPlifier) 60 0, in order to obtain a synchronous corresponding surface topography 1 - dimensional differential capacitance I. According to Inventive Example electrically fu ^ scan of the sensing module comprises 5〇〇 also show resistance sensor, a current sensor.

0522-10185TWFl(Nl);jammgwo.ptc $8 page Fig. 2 shows a scanning electrical probe microscope of the present invention using a long wavelength laser source as a surface imaging architecture configuration diagram. Among them, 丨.3 or 丨.55 micron infrared laser light source 40 0 is used as the incident light source, 'incident light 4 〇 2 is focused on f; the long wavelength reflection surface of the arm standard 300 is reflected, and a reflected light 422 is obtained to reach 1,288,248 thousand Corrected the tea number 92Π9918 V. The invention (5) corresponds to the laser detecting device 420. I 3 and 丨.55 micron infrared laser one pole system uses InGaAsP as the main material. Although its photoelectric characteristics are good, but the temperature resistance is poor, thermocouple cooler (therm〇-electric (TE) c〇〇 is often required. In order to reduce the operating temperature, the inventors have used an example of the operation to compare the difference in optical interference effects under the same operating conditions. The preparation process of the sample to be tested includes providing a < 〇〇 〇〇 — 型 : : : : : : : : : : : : : : : 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂 掺杂Then, the lithography and dry reaction, and the insect engraving (R 1 E ) process are used to form a grid pattern, wherein the grating opening and the width of the knives are 〇·8 # m and 2 // m. Into the bf2+ ion in the bauxite, the inside, the planting energy is 2〇K eV, the implantation dose is 5 x 1〇14 cm-2. Under a N2 atmosphere, a rapid temperature annealing (RTA) process is carried out, the condition is π, seconds.丄 to form a Ρ-Ν junction. After the rapid thermal annealing (rta) process, a thickness of 50 〇 nm of tetraethoxy phthalate (te〇s) layer on the ruthenium substrate to complete the sample to be tested The scanning capacitance microscope provided by the method of e ^ Ming is a ί ft ~ 450 μm, a width of about 30 ~ 50 microns, a thickness of about 5 microns and has a 2 ^ electric 檨 needle, close to the test On the surface of the sample, in the contact mode, the force is as low as nano Newton (about 1 gram weight is one thousand two: it) The two-dimensional capacitive image of the image is displayed. The image of the incident light is irradiated on the reflecting surface of the cantilever beam. The pattern is used in the example. In the example, the light source with a wavelength of 670 nm is used. In 1st, the incident light is irradiated on the opposite side of the cantilever beam at the white position 2, and the stray light received by the scanning region causes the optical absorption shadow 0522-10185TWF1 (N1); j ammgwo.ptc _ case number 9219978

1288248 V. Inventive Note (6) The loudest is loud; in Operation Example 2, the incident light is irradiated at the position 2 of the reflecting surface of the cantilever beam, so that the scanning region is affected by the optical absorption caused by the impurity in the operation example 2 The smallest is equivalent to using a long wavelength ^ light source without light disturbance. Please refer to Fig. 3A, where 丨 and 2 respectively show the focus position of the operation example 丨 and the incident light of the operation 2, and the operation example 丨 focuses on the approaching cantilever beam. The operation example 2 focuses on the position of the cantilever beam holder. (10) and this figure show the arrangement of the incident light at the non-position of the cantilever beam in the example 1 and the operation example 2, respectively. 』日日J Μ The fourth and fourth diagrams show the relationship between the differential (dC/dV)-position in the operation example i and the operation example 2, respectively. Please refer to the figure "Figure, due to wave differential capacitance signal drop (芸

Produced: the impurity; the optical absorption, in which the carrier I is called ectmn) causes the material to be in the low carrier concentration region.

^ dC dC sub-concentration zone differential capacitance signal difference:: low:: electrician f zone: high load ^ drop, resulting in a relatively poor micro...; == = : architecture, due to no optical absorption, can make: The surface image is enhanced as shown in Figure 4. The contrast of the electric image of the sickle is obvious. # ί t μ ^ t ^ 2 == The width of the light y produced by the width of the wide joint is more than 50%. If the visibility is 乍, it is electricity:: the image of the scanned material, the accurate p-reading width can be measured, such as the absorption of the 5th mouth map, 1288248 92119918, the month of the month, the fifth, the invention ( 7) Figs. 6A and 6B respectively show two-dimensional carrier distribution images of the structure of a gold-oxide half element in the operation example 1 and the operation example 2. Referring to Figure 6A, the optical absorption caused by the red laser at a wavelength of 607 nm also produces a surface photovoltage effect between the conductive probe and the scanning surface. This effect makes the observed carrier distribution image more practical. To be wide, that is, to produce electrical junction displacement, this shortcoming has obviously affected the accuracy of the analysis results. For example, the measured equivalent channel length becomes short, and the photovoltage effect produced by optical absorption is measured. The effective channel length L (resulting at 529 nm) is narrower than the actual equivalent channel length [2 (resulting at 596 nm), and the error is 11.2% or more. This shortcoming also severely limits the analytical capabilities of this system on the next 5 nanometer component materials. If this patented design is used, long-wavelength lasers are used as the surface imaging architecture of the electrical scanning probe microscope. Since there is no optical absorption, the exact equivalent channel length L2 can be measured, as shown in Fig. 6B. In addition, due to the scanning current microscopy (C-AFM), scanning potential microscopy (SKM) and scanning diffusion resistance microscopy (SSRM) architecture and scanning capacitance The structure of the microscope is similar. Based on the same principle, a long-wavelength laser source can also be used as the surface topography image imaging architecture to reduce the effect of the optical interference effect on the measurement results. The present invention is characterized in that the long-wavelength laser light source is used as the surface topography image imaging structure, and the wavelength of the laser light may be 丨.3 or 1. 5 5 micro.

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Case No. 92119918 V. Inventive Note (8) Meters, because of the long-wavelength laser, there is no optical absorption phenomenon, and the interference will make the differential electric carrier distribution image, the measured surface topography imaging architecture, and the synchronous analysis material table. The probe microscope device of the invention has the effect of light disturbance, and therefore the material suitability of the energy, and the photon is also low, and the optical image contrast of the electrical measurement analysis is not generated for most semiconductor materials. Obviously enhanced, accurate and accurate ρ~η junction width can be obtained, and the interference phenomenon of the surface light source to the electrical signal can be completely solved, and the surface topography is also used. Providing electrical scanning using long-wavelength laser sources, most semiconductor materials offer virtually no more accurate results and are widely integrated with existing metrology analysis equipment. The invention has been described above with reference to the preferred embodiments, and the scope of the invention is not limited by the scope of the patent application of the present invention. solid

Year _ Day Correction 1288248 Case No. 92119918 Brief Description of the Drawings Fig. 1 shows a functional block diagram of a scanning electrical probe microscope of the present invention; Fig. 2 shows a scanning electrical probe of the present invention. The needle microscope uses a long-wavelength laser source as a surface imaging architecture configuration diagram; the 3A diagram shows a configuration diagram of incident light irradiated at different positions on the reflection surface of the cantilever beam in the operation example, 3B and 3 (: respectively In the operation examples 1 and 2, the incident light is irradiated to different positions of the reflecting surface of the cantilever beam, and the fourth and fourth graphs show the relationship of the differential (dC/dV)-position in the operation example i and the operation example 2, respectively; And FIG. 5B respectively show the two-dimensional images of the electrical degrees in the operation example j and the operation example 2; and the diagrams of the texts / 6A and 6B respectively show the two-dimensional carrier eight cloth images in the operation example i and the operation example 2. 77 [Symbol description] 1 0 0~sample base; 110~AC signal source; 1 2 0~DC bias; 20 0~sample to be tested; 3 0 0~cantilever;32 0~conductive probe; 4 0 0 ~ long wavelength light source; 40 2 ~ incident light;

1288248 Case No. 929198 A_η 曰 Correction diagram simple description 42 0~ long wavelength detection device; 4 2 2~ reflected light; 44 0~ optical calibration device; 6 0 0~ lock-in amplifier; 70 0~ control system device; 80 0~ feedback circuit; 1 and 2~ respectively show the focus position of the incident light of operation example 1 and operation example 2

Mi~ measured joint width; M2~ actual joint width; k~ measured equivalent channel length L2~ actual equivalent channel length.

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Claims (1)

1288248 ~ ----- No. 9211QQ1R_ VI. Application for patent ig - one to two 1 · an electrical scanning probe microscope device, · Atomic force microscope device, which uses ^ ^ + ό as the surface imaging architecture to obtain A surface topographical long-wavelength light source is used as a micro-mirror, including: $ appearance image, wherein the atomic force shows a sample base; and the second scanning plate needle device includes a conductive probe of an independent suspension 1J end ·, 'With the surface imaging architecture of the independent cantilever AFM, ^:, including - long-wavelength laser source, - and 哕: t to the probe probe corresponding to the laser probe device and - long wavelength optics 1 , a laser light source phase-control system device, controlling the scanning probe to set the toughness and the height of the probe device; and the movement position of the ten clothes and the electrical detection detection device A two-dimensional electrical image of the main appearance of the same material is obtained. Less corresponding to the surface shape of the 2 2 · As described in the scope of claim 1, the 苴 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The system is larger than 67 〇. Aggregation, · ΐ!: The electric scanning probe microscope / medium 4 long-wavelength laser source wavelength range described in item 1 of the ί利 range is 1 · 3 or 1 · 5 5 micro yf \ °. The electrical scanning probe microscope device described in claim 1 is wherein the long wavelength optical calibration device is a charge coupled device (CCD). 5. The electrical scanning probe microscope device as described in claim 1 wherein the electrical scanning detection sensing device comprises a capacitive sensor, exhibit 0522-10185TWF2(N1);jammgwo.ptc Page 15 1288248 0522-10185TWF2(Nl);jammgwo.ptc Page 16 1288248 Revision, Chinese Abstract (Invention Name·Electrical Scanning Probe Microscope Apparatus) The present invention provides an electrical scanning probe microscope apparatus. The above microscopy apparatus includes an atomic force microscope apparatus that uses a long-wavelength laser source as a surface imaging architecture to obtain a surface topography image, and an electrical scanning detection sensing device to obtain a synchronized corresponding surface topography image. First, the screen of the nature, (a), the representative of the case is: ____j____ map (a), the representative of the representative figure of the representative symbol of the simple statement 1 〇〇 ~ sample base; · 1 10 ~ AC signal source ; 1 2 0~DC bias; 2 0 0~sample to be tested; 3 0 0~cantilever beam; 3 20~conductive probe; 400~long wavelength source 4 0 2~ incident light; i, English invention summary ~ (invention name:)' 0522-10185TWFl(Nl);jammgwo.ptc Page 2 0522-10185TWF1(N1);j ammgwo.ptc Page 3