*1283025 、· 九、發明說明： _ 【發明所屬之技術領域】 本發明是有關於一種彩色渡光片（color filter)基板之重 工方法，且特別是有關於一種不需要去除電極之彩色濾光片基 板之重工方法。 【先前技術】 由於多顯示域垂直配向型 （multi-domain vertical alignment，MVA )液晶顯示面板可以提供較快的訊號反應速 度、更寬廣的可視角度、更高的透光率、更高的對比率以及更 完美的畫質，近年來逐漸被廣泛地使用。 傳統之MVA液晶顯示面板一薄膜電晶體（thin film transistor，TFT )基板、一彩色濾光片（color filter，CF )基板、 一液晶層及一框膠所構成，薄膜電晶體基板係透過膠框與彩色 濾光片基板夾置液晶層。其中，彩色濾光片基板至少包括電極、 多個彩色慮光片、多個黑色矩陣（black matrix，BM )、數個光 間隔物（photo spacer)及數個凸塊（protrusion)。光間隔物（photo spacer)用以撐開薄膜電晶體基板及彩色濾光片基板，並調整液 晶層的厚度（cell gap )。此外，凸塊用以調整液晶層之液晶分 子倒向不同的方位，以達到廣視角之目的。 在製造彩色濾光片基板之過程中，若發現光間隔物或凸塊 有缺陷或不符合標準時，則必須進行彩色濾光片基板之重工流 程，以去除玻璃基板上之所有東西，包括彩色濾光片、電極、 光間隔物以及凸塊。至於彩色濾光片基板之重工流程將附圖說 明如下。 請參照第1A〜1C圖，其繪示乃傳統之彩色濾光片基板於 5 .1283025 重工時的流程剖面圖。在第1A圖中，彩色濾光片基板10包括 一基板10a、一黑色矩陣l〇b、一彩色濾光片10c、一電極i〇d、 待重工光間隔物l〇e及一待重工凸塊10f。其中，彩色濾光片 基板10更具有一位於顯示區域以外之虛擬區域（dummy area ) 11，在虛擬區域11中，一虛擬光間隔物llb係透過一與電極 i〇d同材質之虛擬電極Ua設置於基板i〇a上。其中，電極i〇d 及虛擬電極lla為銦錫氧化物（indium tin oxide，ITO )，待重 工光間隔物l〇e、待重工凸塊1〇f及虛擬光間隔物llb係由有機 材料透過黃光製程所形成之結構。 接者，如弟1B圖所示，以驗性剝離劑（stripper)去除彩 色渡光片10c。由於電極10d、待重工光間隔物i〇e及待重工凸 塊i〇f不易被酸鹼液去除，故電極1〇d、待重工光間隔物i〇e 及待重工凸塊1 Of將隨底下之彩色濾光片丨〇c之剝離而一併被 去除。如第1 c圖所示，以一溼姓刻（wet etching)步驟去除黑 色矩陣10b及虛擬電極lla，使得虛擬光間隔物nb將隨著底下 之虛擬電極11a的去除而一併被清除。如此一來，將可重新形 成黑色矩陣、彩色濾光片、電極、光間隔物及凸塊於基板i〇a 上。 然而，上述之傳統重工流程，必須利用剝離劑及溼蝕刻步 驟去除基板上之黑色矩陣、彩色滤光片、電極、待重工光間隔 物及待重工凸塊，相當浪費重工時所要使用材料成本及製程時 間。 【發明内容】 有鑑於此，本發明的目的就是在提供一種彩色遽光片基板 之重工方j纟利用乾偏彳步驟去除待重工光間隔物及待重工 6 1283025 螓 • ·凸塊之設計，可以不需要去除彩色濾光片及電極，避免利用剝 離劑及溼蝕刻步驟去除基板上之黑色矩陣、彩色濾光片、電極、 待重工光間隔物及待重工凸塊，大大地省下重工時所要使用之 材料成本及製程時間。 根據本發明的目的，提出一種彩色濾光片基板之重工方 法。首先，置放一彩色濾光片基板於一乾蝕刻反應室中。其中， 才> 色濾光片基板具有一電極及一待重工光間隔物（ph〇t〇 spacer )及一待重工凸塊（pr〇trusi〇n )，待重工光間隔物及待重 ^ 工凸塊係形成於電極上。接著，在乾蝕刻反應室灌入一蝕刻氣 體並執行一乾蝕刻步驟，以去除待重工光間隔物及待重工凸塊。 根據本發明的再一目的，提出一種彩色濾光片基板之重工 方去。首先，置放一彩色濾光片基板於一乾蝕刻反應室中。其 中，衫色濾光片基板具有一電極及一待重工光間隔物，待重工 ^間隔物係形成於電極上。接著，在乾蝕刻反應室灌入一蝕刻 氣體並執行一乾蝕刻步驟，以去除待重工光間隔物。 根據本發明的另一目的，提出一種彩色濾光片基板之重工 方法。首先，置放一彩色濾光片基板於一乾蝕刻反應室中。其 鲁 彩色渡光片基板具有一電極及一待重工凸塊，待重工凸塊 係形成於電極上。接著，在乾蝕刻反應室灌入一蝕刻氣體並執 行一乾蝕刻步驟，以去除待重工凸塊。 其中，上述之蝕刻氣體包含氦氣（He)、氧氣（〇〇、氮氣 (n2)、氫氣（h2)、六敗化硫（SF6)、氯氣（ci2)及氬氣（Ar) “中之，乾姓刻反應室之壓力為350〜1500毫托耳（mt〇rr)， 乾蝕刻反應室之壓力較佳地為5〇〇〜1〇〇〇毫托耳。此外，本發 明更在乾蝕刻反應室之射頻電源為〇〜6仟瓦特之操作條件下 執仃上述之乾姓刻步驟。另外，本發明更在彩色渡光片基板之 7 .1283025*1283025, · IX, invention description: _ [Technical Field of the Invention] The present invention relates to a method for reworking a color filter substrate, and more particularly to a color filter that does not require removal of an electrode The method of reworking the sheet substrate. [Prior Art] Multi-domain vertical alignment (MVA) liquid crystal display panels can provide faster signal response speed, wider viewing angle, higher light transmittance, and higher contrast ratio. And more perfect picture quality, which has been widely used in recent years. The conventional MVA liquid crystal display panel comprises a thin film transistor (TFT) substrate, a color filter (CF) substrate, a liquid crystal layer and a frame glue, and the thin film transistor substrate is transmitted through the plastic frame. A liquid crystal layer is interposed between the color filter substrate and the color filter substrate. The color filter substrate includes at least an electrode, a plurality of color filters, a plurality of black matrices (BM), a plurality of photo spacers, and a plurality of protrusions. A photo spacer is used to open the thin film transistor substrate and the color filter substrate and adjust the cell gap. In addition, the bumps are used to adjust the liquid crystal molecules of the liquid crystal layer to different orientations to achieve a wide viewing angle. In the process of manufacturing a color filter substrate, if the photo spacer or bump is found to be defective or does not meet the standard, the rework process of the color filter substrate must be performed to remove everything on the glass substrate, including color filter. Light sheets, electrodes, photo spacers, and bumps. The rework process of the color filter substrate will be described below. Please refer to FIGS. 1A to 1C for a cross-sectional view showing the flow of a conventional color filter substrate at 5.1283025. In FIG. 1A, the color filter substrate 10 includes a substrate 10a, a black matrix 10b, a color filter 10c, an electrode i〇d, a photo spacer to be reworked, and a to-be-reworked convex. Block 10f. The color filter substrate 10 further has a dummy area 11 outside the display area. In the virtual area 11, a virtual photo spacer 11b is transmitted through a dummy electrode Ua of the same material as the electrode i〇d. It is disposed on the substrate i〇a. The electrode i〇d and the dummy electrode 11a are indium tin oxide (ITO), and the photo spacer l〇e, the bump to be reworked, and the dummy photo spacer llb are transparent to the organic material. The structure formed by the Huangguang process. Next, as shown in Fig. 1B, the color filter 10c is removed by an experimental stripper. Since the electrode 10d, the photo spacer to be reworked, and the bump i〇f to be reworked are not easily removed by the acid and alkali solution, the electrode 1〇d, the photo spacer to be reworked, and the bump to be reworked 1 Of will follow The color filter 丨〇c underneath is peeled off and removed. As shown in Fig. 1c, the black matrix 10b and the dummy electrode 11a are removed by a wet etching step so that the dummy photo spacers nb are collectively removed as the underlying dummy electrode 11a is removed. In this way, the black matrix, the color filter, the electrodes, the photo spacers, and the bumps can be reformed on the substrate i〇a. However, in the above-mentioned conventional rework process, it is necessary to remove the black matrix, the color filter, the electrode, the photo spacer to be reworked, and the bump to be reworked on the substrate by using a stripping agent and a wet etching step, which is quite wasteful of the material cost to be used in heavy work and Process time. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a color slab substrate with a dry hemispherical step to remove the to-be-reworked photo spacer and the design of the to-be-reworked 6 1283025 螓• bump. It is not necessary to remove the color filter and the electrode, and the removal of the black matrix, the color filter, the electrode, the photo spacer to be reworked, and the bump to be reworked on the substrate by using the stripping agent and the wet etching step, thereby greatly saving the rework time Material cost and process time to be used. In accordance with the purpose of the present invention, a method of reworking a color filter substrate is presented. First, a color filter substrate is placed in a dry etching reaction chamber. Wherein, the color filter substrate has an electrode and a spacer to be reworked (ph〇t〇spacer) and a to-be-reworked bump (pr〇trusi〇n) to be reworked and to be re-worked. A work bump is formed on the electrode. Next, an etching gas is poured into the dry etching reaction chamber and a dry etching step is performed to remove the photo spacers to be reworked and the bumps to be reworked. According to still another object of the present invention, a heavy work of a color filter substrate is proposed. First, a color filter substrate is placed in a dry etching reaction chamber. The shirt color filter substrate has an electrode and a photo spacer to be reworked, and the spacer is formed on the electrode. Next, an etching gas is poured into the dry etching reaction chamber and a dry etching step is performed to remove the photo spacer to be reworked. According to another object of the present invention, a method of reworking a color filter substrate is proposed. First, a color filter substrate is placed in a dry etching reaction chamber. The Lu color light-emitting substrate has an electrode and a bump to be reworked, and the bump to be reworked is formed on the electrode. Next, an etching gas is poured into the dry etching reaction chamber and a dry etching step is performed to remove the bumps to be reworked. Wherein, the etching gas includes helium (He), oxygen (helium, nitrogen (n2), hydrogen (h2), hexavalent sulfur (SF6), chlorine (ci2), and argon (Ar), The pressure in the reaction chamber is 350~1500 mTorr, and the pressure in the dry etching reaction chamber is preferably 5〇〇~1〇〇〇mTorr. In addition, the present invention is further in dry etching. The RF power supply of the reaction chamber is subjected to the above-mentioned dry name engraving step under the operating conditions of 〇~6 watts. In addition, the present invention is further provided in the color slab substrate 7.1283025
文特舉一較佳實施例，並配合所附圖式， 和優點能更明顯易懂 弍’作詳細說明如下： 【實施方式】 本發明特別提供一種彩色濾光片（color filter)基板之重 工方法，其利用乾蝕刻（dry etching)步驟之方式，不同於傳 統之祕刻（wet etching)步驟，可以在不需要去除彩色渡光 片及電極的情況下直接去除電極上之待重工光間隔物（_。 spacer，PS)及待重工凸塊（protrusi〇n)或其中之一避免利 用剝離劑及溼蝕刻步驟去除基板上之黑色矩陣、彩色濾光片、 電極、待重工光間隔物及待重工凸塊，大大地省下重工時所要 花費之材料成本及製程時間。 請參照第2圖，其繪示乃依照本發明之較佳實施例之彩色 渡光片基板之重工方法的流程圖。在第2圖中，首先，在步驟 21中，置放一彩色濾光片基板於一乾餘刻反應室（心丫 chamber)中。其中，彩色濾光片基板至少具有一電極、一待重 工光間隔物（photo spacer)及一待重工凸塊（pr〇trusi〇n)，待 重工光間隔物及重工凸塊係形成於電極上。接著，進入步驟Μ 中’在乾餘刻反應室灌入一餘刻氣體，並執行一乾餘刻步驟， 以去除待電極上之重工光間隔物及待重工凸塊。 在本實施例中，上述所灌入於乾蝕刻反應室中的蝕刻氣體 包3乱氣（He )、氧氣（〇2)、氮氣（N2 )、氫氣（Η〕）、六氟^化 硫（SF6)、氯氣（C!2)及氬氣（Ar)其中之一或任意組合，乾 8 .1283025 # =反應室之壓力為35G〜測毫托耳（琳小且乾餘刻反 應室=壓力較佳地為·〜麵毫托耳。此外，更可在乾蚀刻 反應室之射頻電源為0〜6仟瓦特（kw)之操作條件下執行上 述乾姓刻步驟。另外，更可在彩色遽光片基板之溫度為3〇〜9〇 c之操作條件下執行±述之乾㈣步驟。上述之乾㈣步驟為 電漿蝕刻步驟、濺擊蝕刻步驟及反應離子蝕刻步驟之一，在此 以電漿蝕刻步驟為例作說明。 請參照第3圖，其繪示乃依照本發明之較佳實施例之可去 除待重工光間隔物及待重工凸塊之電漿蝕刻機台的示意圖。在 •第3㈣，電漿钱刻機纟29包括一乾餘刻反應冑％、二平行 設置之電極31及32、一射頻電源供應器33。射頻電源供應器 33係與電極31耦接並接地，電極32係可承載而加熱彩色濾光 片基板32,並接地。其中，彩色濾光片基板35包括一基板35&、 一黑色矩陣35b、一彩色濾光片35c、一電極35d、一待重工光 間隔物35e及一待重工凸塊35f或其中之一。黑色矩陣3儿係 形成於基板35a上，彩色濾光片35c係形成於基板35a之上， 並覆盖黑色矩陣3 5 b。此外，彩色遽光片3 5 c例如包含紅色（r )、 Φ 綠色（G )及監色（B )等彩色濾光片。電極35d係形成於彩色 渡光片35c上，待重工光間隔物35e及待重工凸塊35f係形成 於電極35d之上，如第4A圖所示。其中，第4A圖繪示乃彩色 慮光片基板被本貫施例之乾餘刻步驟去除待重工光間隔物前之 結構的掃描式電子顯微鏡（scanning electron microscope，SEM) 照相圖。此外，基板35a為可以玻璃基板，電極35d可以為銦 錫氧化物（indium tin oxide，ITO)，待重工光間隔物35e及待 重工凸塊35f通常為有機材料。 當彩色慮光片基板3 5置放在乾姓刻反應室3 〇内之電極3 2 9 1283025 '上時，射頻電源供應器33係可提供乾蝕刻反應室30之射頻電 • 源為0〜6仟瓦特（kw)，使得電極31及32之間產生壓差。從 乾蝕刻反應室30上方可通入包含氦氣（tIe)、氧氣（〇2)、氮 氣（n2)、氫氣（h2)、六氟化硫（SF6)、氣氣（cl2)及氬氣（Ar) 其中之一的蝕刻氣體，以分佈於蝕刻反應室3〇中。透過電極 32之加熱機制，可以讓彩色濾光片基板35之溫度維持在3〇〜 90 C。此外，電漿蝕刻機台29係可控制乾蝕刻反應室3〇之壓 力為350〜1500毫托耳（mtorr)，較佳地為35〇〜15〇〇毫托耳 (mtorr ) 〇 由於电極31及32之間產生壓差，電極31將會產生電子 而撞擊乾蝕刻反應室30之蝕刻氣體，使得被電子撞擊之蝕刻氣 體游離成蝕刻離子或蝕刻自由基，統稱為電漿34。此時，電漿 34將會高速撞擊電極32上之彩色濾光片基板35。當電漿“撞 擊彩色濾光片基板35之電極35d、待重工光間隔物35e及待重 工凸塊35f，由於乾蝕刻步驟較傳統之溼蝕刻步驟對有機材料及 ιτο更具有較佳蝕刻選擇比，故電漿34將會只去除由有機材料 構成之待重工光間隔物35e及待重工凸塊35f，而不會去除由 • IT〇構成之電择35d，如第4B圖所示。其中，第4B圖繪示乃 衫色濾光片基板被本實施例之乾蝕刻步驟去除上之待重工光間 隔物後之結構的SEM照相圖。之後，在乾蝕刻反應室3〇之下 方將透過真空抽離方式把蝕刻後之產物將從被抽出到乾蝕刻 反應室30之外。如此一來，即可將已被去除待重工光間隔物 35e及待重工凸塊35f之彩色濾光片基板移出於電漿蝕刻機台 29之外，重新形成光間隔物及凸塊於電極35d上。此外，亦可 在重新形成光間隔物及凸塊於電極35d上之前，進行一清洗步 驟及一烘乾步驟，以去除電極35d上之殘留物。 •1283025 ' 然本實施例所屬技術領域中具有通常知識者亦可以明瞭 ' 本發明之技術並不侷限在此，例如，對於電極上只有待重工光 間隔物或待重工凸塊之彩色濾光片基板而言，亦可利用上述之 乾蝕刻步驟去除電極上之待重工光間隔物或待重工凸塊。 舉例來說，若彩色濾光片基板之電極上灑佈有待重工間隔 物，並非是以黃光製程所形成之待重工光間隔物，則以撒佈方 式所形成之待重工間隔物僅需以清洗方式去除之。但，對於位 於電極上之待重工凸塊而言，可用上述之乾蝕刻步驟去除之。 馨若電極上只有待重工光間隔物，而沒有任何凸塊設置時， 如應用於非多顯示域垂直配向型（multi d〇main vertkai alignment’ MVA)液晶顯示面板之彩色濾光片基板就不需要有 凸塊的設置，亦可用上述之乾蝕刻步驟去除電極上之待重工光 間隔物。 本發明上述實施例所揭露之彩色濾光片基板之重工方 法，其利用乾蝕刻步驟去除待重工光間隔物及待重工凸塊之設 计，可以不需要去除彩色濾光片及電極，避免利用剝離劑及溼 蝕刻步驟去除基板上之黑色矩陣、彩色濾光片、電極、待重工 • 光間隔物及待重工凸塊，大大地省下重工時所要花費之材料成 本及製程時間。 裏 r、上所述，雖然本發明已以一較佳實施例揭露如上，然其 並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍内，當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 1283025 【圖式簡單說明】 第1A〜1C圖繪示乃傳統之彩色濾光片基板於重工時的流 程剖面圖。 第2圖繪示乃依照本發明之較佳實施例之彩色濾光片基板 之重工方法的流程圖。 第3圖繪示乃依照本發明之較佳實施例之可去除待重工光 間隔物及待重工凸塊之電漿蝕刻機台的示意圖。 第4A圖繪不乃彩色濾光片基板被本實施例之乾蝕刻步驟 去除待重工光間隔物前之結構的掃描式電子顯微鏡（scanni叩 electron microscope，SEM)照相圖。 第4B圖繪示乃彩色濾光片基板被本實施例之乾蝕刻步驟 去除上之待重工光間隔物後之結構的SEM照相圖。 【主要元件符號說明】 10、35 :彩色濾光片基板 10a、35a :基板 10b、35b :黑色矩陣 10c、35c :彩色濾光片 10d、31、32、35d :電極 10e、35e :待重工光間隔物 10f、35f :待重工凸塊 11 :虛擬區域 11 a ·虛擬電極 lib :虛擬光間隔物 29 :電漿蝕刻機台 30 :乾蝕刻反應室 12 .1283025 33 :射頻電源供應器 34 :電漿DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides a color filter substrate reworked in detail. The present invention provides a detailed description of the color filter substrate. The method uses a dry etching step, which is different from the conventional wet etching step, and can directly remove the photo spacers to be reworked on the electrodes without removing the color ferrite and the electrodes. (_. spacer, PS) and the bump to be reworked or one of them avoids the removal of the black matrix, color filter, electrode, photo spacer to be reworked, and the substrate on the substrate by using a stripper and a wet etching step. Reworked bumps greatly save the material cost and process time required for heavy work. Referring to Figure 2, there is shown a flow chart of a method of reworking a color light-passing substrate in accordance with a preferred embodiment of the present invention. In Fig. 2, first, in step 21, a color filter substrate is placed in a dry chamber (heart chamber). Wherein, the color filter substrate has at least one electrode, a photo spacer and a to-be-reworked bump, and the reworked photo spacer and the rework bump are formed on the electrode. . Next, proceeding to step ’, a gas is injected into the reaction chamber, and a dry step is performed to remove the reworked photo spacer and the bump to be reworked on the electrode. In this embodiment, the etching gas contained in the dry etching reaction chamber contains the gas (He), oxygen (〇2), nitrogen (N2), hydrogen (Η), and hexafluoride (sulphur). One or any combination of SF6), chlorine (C!2) and argon (Ar), dry 8.1283025 #=The pressure in the reaction chamber is 35G~Measure millitor (Lin small and dry residual reaction chamber = pressure Preferably, the surface of the dry etching chamber is operated under the operating conditions of 0 to 6 watts (kw) of the dry etching reaction chamber. The dry (four) step is performed under the operating conditions of the temperature of the light substrate of 3 〇 to 9 〇 c. The dry (four) step is one of a plasma etching step, a splash etching step, and a reactive ion etching step. The plasma etching step is taken as an example. Referring to FIG. 3, a schematic diagram of a plasma etching machine capable of removing a photo spacer to be reworked and a bump to be reworked according to a preferred embodiment of the present invention is shown. • 3rd (4), the plasma money machine 纟29 includes a dry residual reaction 胄%, two parallel electrodes 13 and 32, one The RF power supply 33 is coupled to the electrode 31 and grounded, and the electrode 32 is capable of carrying and heating the color filter substrate 32 and grounded. The color filter substrate 35 includes a substrate 35 & a black matrix 35b, a color filter 35c, an electrode 35d, a to-be-reworked photo spacer 35e, and a to-be-reworked bump 35f or one of them. The black matrix 3 is formed on the substrate 35a, and the color filter is filtered. The sheet 35c is formed on the substrate 35a and covers the black matrix 35b. Further, the color light-emitting sheet 35c includes, for example, color filters such as red (r), Φ green (G), and color (B). The electrode 35d is formed on the color light-receiving sheet 35c, and the to-be-reworked photo spacer 35e and the to-be-reworked bump 35f are formed on the electrode 35d as shown in Fig. 4A. The scanning substrate (SEM) image of the structure before the photo spacer to be reworked is removed by the dry etching step of the present embodiment. Further, the substrate 35a is a glass substrate, and the electrode 35d may be Indium tin oxi De, ITO), the photo spacer 35e to be reworked and the bump 35f to be reworked are usually organic materials. When the color light-receiving substrate 35 is placed on the electrode 3 2 9 1283025 ' in the chamber 3 The RF power supply 33 can provide the RF power source of the dry etching reaction chamber 30 to 0 to 6 watts (kw), so that a voltage difference is generated between the electrodes 31 and 32. It can be accessed from above the dry etching reaction chamber 30. An etching gas containing one of xenon (tIe), oxygen (〇2), nitrogen (n2), hydrogen (h2), sulfur hexafluoride (SF6), gas (cl2), and argon (Ar), Distributed in the etching reaction chamber 3〇. The temperature of the color filter substrate 35 can be maintained at 3 〇 to 90 C by the heating mechanism of the electrode 32. In addition, the plasma etching machine 29 can control the dry etching reaction chamber 3〇 to a pressure of 350 to 1500 millitorr (mtorr), preferably 35 to 15 millitorres (mtorr). A pressure difference is generated between 31 and 32, and the electrode 31 will generate electrons to strike the etching gas of the dry etching reaction chamber 30, so that the etching gas hit by the electrons is freed into etching ions or etching radicals, collectively referred to as plasma 34. At this time, the plasma 34 will strike the color filter substrate 35 on the electrode 32 at a high speed. When the plasma "impeses the electrode 35d of the color filter substrate 35, the photo spacer 35e to be reworked, and the bump 35f to be reworked, the dry etching step has a better etching selectivity than the conventional wet etching step for the organic material and the material. Therefore, the plasma 34 will remove only the photo spacer 35e to be reworked and the bump 35f to be reworked, which are composed of an organic material, without removing the electromotive 35d composed of IT〇, as shown in Fig. 4B. Figure 4B is a SEM photograph showing the structure of the shirt filter substrate after the dry etching step of the embodiment is removed to remove the photo spacer. Thereafter, the vacuum is passed under the dry etching chamber 3〇. The etched product will be extracted out of the dry etch reaction chamber 30. Thus, the color filter substrate from which the photo spacer 35e to be reworked and the bump 35f to be reworked can be removed can be removed. In addition to the plasma etching machine 29, the photo spacers and the bumps are newly formed on the electrode 35d. Further, a cleaning step and a drying may be performed before the photo spacers and the bumps are re-formed on the electrodes 35d. Step to remove electrode 35d Remaining. • 1283025 ' However, those skilled in the art to which the present invention pertains can also be understood. The technology of the present invention is not limited thereto, for example, only the photo spacer to be reworked or the bump to be reworked on the electrode. For the color filter substrate, the dry etching step may be used to remove the photo spacer to be reworked or the bump to be reworked on the electrode. For example, if the electrode of the color filter substrate is sprinkled with a spacer to be reworked The spacer to be reworked formed by the yellowing process is not only removed by cleaning, but for the bump to be reworked on the electrode, It can be removed by the dry etching step described above. If there is only a photo spacer to be reworked on the electrode, and there is no bump setting, such as multi d〇 main vert Kai alignment (MVA) liquid crystal display. The color filter substrate of the panel does not need to have a bump arrangement, and the above-mentioned dry etching step can also be used to remove the photo spacer to be reworked on the electrode. The method for reworking the color filter substrate disclosed in the embodiment, which uses the dry etching step to remove the design of the photo spacer to be reworked and the bump to be reworked, can eliminate the need to remove the color filter and the electrode, and avoid using the stripping agent and The wet etching step removes the black matrix, color filters, electrodes, to be reworked, photo spacers, and bumps to be reworked on the substrate, which greatly saves the material cost and process time required for rework. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and various modifications and refinements may be made without departing from the spirit and scope of the invention. The scope of the present invention is defined by the scope of the appended claims. 1283025 [Simplified Schematic] FIGS. 1A to 1C are cross-sectional views showing the flow of a conventional color filter substrate during rework. Figure 2 is a flow chart showing a method of reworking a color filter substrate in accordance with a preferred embodiment of the present invention. Figure 3 is a schematic illustration of a plasma etching machine that removes the spacers to be reworked and the bumps to be reworked in accordance with a preferred embodiment of the present invention. Fig. 4A is a scanning electron microscope (SEM) photograph of the structure before the color filter substrate is removed by the dry etching step of this embodiment. Fig. 4B is a SEM photograph showing the structure of the color filter substrate after the dry etching step of the embodiment is performed to remove the photo spacer to be reworked. [Description of main component symbols] 10, 35: color filter substrates 10a, 35a: substrates 10b, 35b: black matrixes 10c, 35c: color filters 10d, 31, 32, 35d: electrodes 10e, 35e: light to be reworked Spacer 10f, 35f: to be reworked bump 11: virtual area 11 a · virtual electrode lib : virtual light spacer 29 : plasma etching machine 30 : dry etching reaction chamber 12 . 1283025 33 : RF power supply 34 : electricity Pulp
1313