1282620 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種應用於掃描器、傳真機等事務機中之影像擷取裝 置，尤指一種接觸式影像感測模組及其感測基板。 【先前技術】 光電二極體係一種光感測元件，當其表面受到光線照射時，會根據 所接受到光照的強度而產生相對應的電流輸出，再透過適當的轉換電 路將光電二極體所產生的電流轉換為類比電壓訊號。在實際的應用 中，可將多個光電二極體以及轉換電路，以半導體製程整合於單一半 導體晶片之内而形成光電感測晶片。接著，多個光電感測晶片以一定 次序組合而成一影像感測陣列，並可進一步配合週邊的電路設計而製 作於一塊電路板上，再將一線性光源以及柱狀透鏡陣列依光學要求與 此電路板精密組合後即構成所謂的接觸式影像感測模組（contact Image Sensor，CIS)。如今，接觸式影像感測模組已廣泛地應用於掃 描器、傳真機等事務處理機上。 當使用接觸式影像感測模組進行文件掃描時，線性光源會投射光線 至待掃描文件上，經待掃描文件反射之光線經由柱狀透鏡陣列匯聚， 最終投射於影像感測陣列上，由影像感測陣列中每一個光電二極體進 行感光後將光訊號轉變為類比電訊號，再由掃描器主板上相應的轉換 電路（如類比數位轉換電路）將類比電訊號轉換為數位訊號，最後由 軟體將這些數位訊號編排組合成電子影像檔，從而完成掃描。由於每 一個光電二極體均對應了掃描線上的各相應位置，因此根據這些位置 1282620 上收集到的光電流的強弱，經由時序控制電路以及放大電路處理後， 即可還原出原稿上該位置的圖案及色彩。 中華民國專利公告第447211號即揭示了一種習知之接觸式影像感 測板、’且軸組之内部結構請參照第—圖所示。該接觸式影像感測模 組包括蓋體102、柱狀透鏡陣列1〇4、線性光源1〇6、本體1〇8，以及BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image capturing device for use in a printer such as a scanner or a facsimile machine, and more particularly to a contact image sensing module and a sensing substrate thereof. [Prior Art] A photo-sensing element of a photodiode system, when its surface is exposed to light, generates a corresponding current output according to the intensity of the received light, and then passes through a suitable conversion circuit to the photodiode. The resulting current is converted to an analog voltage signal. In practical applications, a plurality of photodiodes and conversion circuits can be integrated into a single-half conductor wafer by a semiconductor process to form a photo-sensing wafer. Then, a plurality of photo-sensing wafers are combined in a certain order to form an image sensing array, and can be further fabricated on a circuit board according to the peripheral circuit design, and then a linear light source and a cylindrical lens array are optically required. The precise combination of the boards forms a so-called contact image sensor (CIS). Today, contact image sensing modules have been widely used in transaction processors such as scanners and fax machines. When the contact image sensing module is used for file scanning, the linear light source projects light onto the file to be scanned, and the light reflected by the file to be scanned is concentrated by the lenticular lens array, and finally projected onto the image sensing array, and the image is imaged. Each photodiode in the sensing array is sensitized to convert the optical signal into an analog electrical signal, and then the corresponding conversion circuit (such as an analog digital conversion circuit) on the scanner main board converts the analog electrical signal into a digital signal, and finally The software combines these digital signal files into an electronic image file to complete the scan. Since each photodiode corresponds to each corresponding position on the scanning line, according to the intensity of the photocurrent collected at these positions 1282620, after processing by the timing control circuit and the amplifying circuit, the position on the original can be restored. Patterns and colors. The Republic of China Patent Publication No. 447211 discloses a conventional contact image sensing panel, and the internal structure of the shaft group is shown in the figure. The contact image sensing module includes a cover 102, a lenticular lens array 〇4, a linear light source 〇6, a body 1〇8, and
感測基板11 ()。感測基板11Q之—側靠近其邊緣處縱向排列了多個光電 感測曰曰片112G ’這些光電感測晶片⑽長度侧且等間隔分佈，共同 組成-影像感測陣列112。類似的影賴測陣顺構還可參見中華民國 專利公告第2臟號，鱗锻加清楚地_了光電是等長 度均勻地排顺感測基板上的。這種由多個光電感測晶片接續而成的 影像感測陣列中間存在接續點而會損失接續點位置的部分圖像，對於 反射式文件掃财説，由於縣的影像崎錄低，_可以通過軟 體計算來補正接續點位置損失的影像，從而得到可接受的影像資料， 然而對於制娜來説，通常精度及崎㈣要求概較高，故與底 片寬度相對應之光電感測晶片必須是整片的，不能存在接續點。曰常 經過計算，要掃描35公釐寬度 生活中最常見的底片寬度為35公董， 之底片，對應之光電感測晶片的長度至少要達到27公釐，故在習知技 藝中兼有反射式文件掃描魏與底片掃描功能邮像感測模組中每一 片光點感測⑼的長度均為27公釐。對解導_麵言，習知⑹ 圓切割方式請參照第二圖所示，晶圓搬被盡可能多的切割成複數少 長度相同（如：27公釐）之晶片204，該些晶片⑽便可被用_ 1282620 所述的含有光電制紐電路之光電制“n這種晶圓切割 方式會造成晶圓周邊區域的大量浪費，如第二圖憎號為觸的空白 區域即表示晶圓中的無用區域^於—片晶_成本是固㈣，能從 巾切割越多的有效晶片’則單片晶片的成本就越低，從而製造一個感 測基板或-個影像感測模組的成本就會越低，反之，如果晶圓中的無 歷域越大’賴造-_職減—個影賴__成本就會越 高。麵，上述習知的從-片晶圓上切割長度相同的晶片來製造的影 黎像感測模組及其感測基板的成本均難以得到控制。 故’有必要提供-種低成本的接觸式影像感測模組及其感測基 板，以解決習知技術中所存在的缺陷。 ^ 【發明内容】 ‘ 本發明之目的在於提供-種赋本的_式影縣瀬組及其感 測基板，其主要從晶圓的利神方面進行考量而降低單片光電感測晶 #的成本，躺賴降域職板及影像感職組成本之目的。 籲 树•另-目齡於提供—料n針壯舰穌之接觸式影 像感測模組而設計的晶_切割方案，以_片晶圓製造出盡可能 多的光電感測晶片。 本發明之再-目的在於提供—種具有特定光電制晶片排列方式 的感測基板，該感測基板既能結合反射式文件掃描也能結合底片的精 密掃描，且感測基板的成本低廉。 «本發歡Jl述㈣，本發日服供_種可結合反赋文件掃插 1282620 與底片掃描之接觸式影像感測模組及其感測基板。該影像感測模組由 感测基板、光源及透鏡所組成。其中感測基板包括一縱長的印刷電路 板以及設置在印刷電路板上之影像感測陣列，該影像感測陣列包括沿 印刷電路板之縱向依次排列成一列之至少一長光電感測晶片及複數片 短光電感測晶片。長光電感測晶片的長度至少達到掃描底片寬度所需 的感測長度，長、短光電感測晶片共同構成的影像感測陣列之長度至 少達到掃描反射式文件寬度所需的感測長度。掃描時，光源發出的光 線照射到待掃描物（反射式文件或底片）上，經待掃描物反射至透鏡， 並由透鏡匯聚至影像感測陣列，再由影像感測陣列感受光線之強弱， 把強弱不同之光訊號轉換為電訊號而輸出至印刷電路板。當掃描底片 時’只需要長光電感測晶片進行光電感測；當掃描反射式文件時，影 像感測陣列上所有晶片都需要進行光電感測。 上述一長光電感測晶片及複數片短光電感測晶片均可由同一片晶 圓切割而成。在該晶圓的邊緣或靠近中央的位置縱向切割出一長晶片 組，其餘部分均切割成長度相同之複數個短晶片組。其中長晶片組再 經橫向切割而成複數片長光電感測晶片，每一個短晶片組再經横向切 割而成複數片短光電感測晶片。 與本發明之先前技術相比較，本發明接觸式影像感測模組及其感 測基板在既能結合反射式文件掃描又能結合底片掃描的前提下，從降 低感測基板上每一片光電感測晶片之成本著手，最大限度的提高了晶 圓利用率，從成本固定的單片晶圓中切割出盡可能多的光電感測晶 1282620 片’從而降低_基缺雜_模_成本。 【實施方式】 本發簡觸式_顯_1像擷取裝置，其主娜於結合 、式文件料功I與底片掃描功能之掃描器或傳真機等事務機 中明參閲第二圖所不，本發明接觸式影像感測模組3主要包括有： 广、有縱向尺寸之本體3卜安裝於本體&上部收容空間内之透鏡 32及光源33、可封住本體31上部開口之蓋體％，以及安裝於本體& 下部之感測基板35。其中，透鏡32可以是柱狀透鏡_，亦可以是高 鱗之光學透鏡。光源33包括發光二極體332以及沿縱向延伸之導光 板334。掃描時’光源33發出的光照射到待掃描文件（反射式文件或 底片）上並被待掃敎敍射錢射，反射光或透射光經過透鏡32正 向等倍地聚焦在_基板35上。在-铺定的實施例巾，光源33可 以疋冷陰極管（Cold Cathode Flourcent Lamp)構成之白色光源，而 配合的影像感測陣列係一彩色影像感測陣列。由於本體31、透鏡32、 光源33以及蓋體34之結構皆屬習知技藝，故此處不再贅述。以下結 合本發明的較佳實施方式著重介紹感測基板35。 第四及五圖分別揭示了本發明感測基板的第一及第二實施方式。感 測基板35 (35’）包括具有一定縱向尺寸之印刷電路板352 (352’）， 設置於印刷電路板352(352’）上靠近一縱向邊緣之影像感測陣列354 (354’），以及印刷電路板352 ( 352，）上之控制電路355 (355’）。 影像感測陣列354 (354，）係由一片靠近縱向邊緣之長光電感測晶片 (簡稱長晶片）356 (356，）及多片長度相同的短光電感測晶片（簡 1282620 稱短⑼）358 (358,）連續排列喊。所有的光電感·片排列成 -行，長晶片356 (356，）位於該行之起始端（如第四圖所示）或最 末端（如第五圖所示）。此處所謂的長晶片係指在底片掃描中，其長度 足夠感測來自底片寬度的反射光或透射光之晶片，對於常見的％公羞 寬度底片來説，該長晶片喊度應該大於27公釐；而所謂的短晶片係 指長度小於長晶片長度之⑻。在第—與第二實施方式中，僅長晶片 356 (356’）與短晶片358⑽，）在印刷電路板脱⑽，）上的 # 排列位置不同，而長晶片356⑽，）與短晶片358 (358，）各自的 長度及轉原理均相同，故以下僅結合第四及六_第—實施方式進 行説明。長晶片咖與短晶片358工作時所需的控制訊號不同，控制 • 電路355即針對長晶片356與短晶片咖分別發送不同的控制訊號(如 時脈訊號)，以保證長、短晶片356、舰都能正常工作。本發明接觸 式娜感職組3既可細於反射式文件62之掃描亦可應用於底片Μ 之掃為’由於掃描底片61所要求的精度比較高，故在光電感測陣列354 中，對應於底片61寬度之長晶片356必須是一片能夠滿足底片Μ的 感則長度之阳片，不能由幾片短晶片拼接而成，會造成晶片拼接 位置影像的損失；而反射式文件62的掃描精度要求比較低，加之晶片 成本之考量，故在習知技藝中，都是採用晶片拼接的方式來得到一長 列影像感測_，該影像__之長度必須足㈣足反射式文件62 的感測長度’而在拼接處損失的影像則可通過軟體計算來補足。在婦 描底片61時，只需要長晶片咖進行光電感測；在掃描反射式文件62 1282620 時，影像感測陣列354上所有的晶片都需要進行光電感測。在本發明 的to實鮮式巾，辆33發_光_酬待掃描㈣或62上， 62? 354 ’控制電路355根據待掃描文件的麵而發出相應的時脈訊號，以 驅動相躺錢_晶紅作，被赫之光電較光學明亮 變化，把強弱不同之光訊號轉換為電訊號而輸出至印刷電路板脱上 之相應電路（未圖示），從而得到待掃描物寬度上的—行影像資料。然 後接觸式影像感職組3在傳動麵（細示）的帶動下沿待掃描物 61或62之長度方向移動，進而得到待掃描物61或⑽寬度上的多行影 像資料，直到最末-行掃描完畢。絲，由上述印刷電路板352上之 相應電路把其收制崎有影像資料的電訊號整合成電子影像檔。在 掃描底片61時，影像感測模組3既可使用彩色影像感測陣列搭配白色 光源作爲掃描_穿透性辆、，亦可使聽白影像制_搭配彩色 光源切換紅綠藍三色光作爲掃描時的穿透性光源。 在本發明中，之所以設計成這種由至少一片長晶片356與多片短晶 片358共同組成影像感測陣列354的結構形式，主要是從晶片成本方 面加以考量的。對於半導體製程而言，一片晶圓的成本是固定的，如 果都切割成短晶片顯然不能夠滿足底片所需的感測長度 ，而如果都切 割成長S曰片則會造成晶圓的大面積浪費（如第二圖所示）。又考慮到不 同片晶圓的光電特性會相差很遠，製造一個影像感測模組不適合從不 同晶圓上截取晶片。故，本發明提出在一片晶圓上設計長短不同的兩 11 1282620 種晶片的設計方案。 請參照第七圖所示，係本發明接觸式影像感測模組3中長、短光電 感測晶>1在同-片關上的第一設計方案。在晶圓7的邊緣設計一縱 長的矩形H组72，其餘部分盡可能？的設計成複數伽長的矩形 短晶片組74。該長晶片組72可以沿橫向切割成多片長度相同之長晶片 356 (356’ ），而每一短晶片組74可以沿橫向切割成多片長度相同之 短晶片358 (358’），這些長、短晶片356 (356，）、358 (358，）可 X各："、、第四及五圖所揭示的方式排列成多個影像感測陣列354 (354 >進而製造成多個影像感測模組3。圖中空白部分表示無用區 域76 ’顯然在這種設計方案中，無用區域比第二圖中的無用區域娜 要少很多，即晶圓的利用率得以提高，而單片光電感測晶片3邡 (6 ) 358 (358 )的成本則相對降低，並進一步降低接觸式影 像感測模組3之成本。 再请參照第八圖所示，係本發明接觸式影像感測模組3中長、短光 電感測晶片在同一片晶圓上的第二設計方案。在晶圓7,的較中央位置 十縱長的矩形長晶片組72，，其餘部分盡可能多的設計成複數個 縱長的矩形短晶片組74，。與第_設計方案相同，長晶片組72，與短 曰曰片組可分別沿橫向切割成多片長晶片356 (356，）及多片短晶片358 (358 )來排列成多個影像感測陣列354 (354，），進而製造出多個 衫像感測模組3。難該設計方案巾的無用區域76，&第二圖中的無 用區域2G6少了报多。由此可知，該設計也能提高晶圓的彻率，從 1282620 而降低影像感測权組3的製造成本。 當然，本發明還有其他的設計方式，可以根據需要，在一片晶圓上 設計多片長晶片組，且可以根據底片在掃描平臺上的位置來調整長晶 片於感測基板上的排列位置，並可以根據同時掃描底片的數量來改變 影像感測陣列中長晶片的數量。 通過上述分析可知，與習知技術挺，本發明之_式影像感測 模組3及其感測基板35皆具有較佳的晶片成本優勢，相較於都是使用 長晶片所製成的影像感測模組或感測基板成本約可降低2⑽。另外， 長、短晶片湖製造於同-片晶_，可使長、短晶片的光電特性趨 進一致，避免兩者均勻度差異太大使影像掃描不良。 、綜上所述，本發明確已符合發明專利之要件，妥依法提出專利申 請。惟，以上所述者僅爲本發明之較佳實施方式，舉凡熟習本案技術 之人士援依本發明之精神所作之等效修飾或變化，皆涵蓋於後附之申 睛專利範圍内。 > 【圖式簡單說明】 第一圖係習知的接觸式影像感測模組的組成示意圖。 第二圖係習知的光電感測晶片於晶圓上的排列方式示意圖。 第三圖係本發明接觸式影像感測模組的组成示意圖。 第四_本發喊龜板㈣-實施方式的結構示賴，主要揭示光 電感測晶片在感測基板上的一種排列方式。 第五圖係本發_龜板的第二實施方式的結構轉圖，主要揭示光 電感測晶片在感測基板上的另一種排列方式。 13 1282620 第六圖係一不意圖，主要揭示本發明接觸式影像感測模組中長晶片與 底片的對應關係，以及影像感測陣列與反射式文件的對應關係。 第七圖係本發明光電感測晶片於晶圓上的一種排列方式之示意圖。 第八圖係本發明光電感測晶片於晶圓上的另一種排列方式之示意圖。 【主要元件符號說明】 蓋體 102, 34 柱狀透鏡陣列 104 光源 106, 33 本體 108丨 ，31 印刷電路板 110， 352， 352’影像感測陣列U2, 354,354’ 光電感測晶片 1120 晶圓 202 晶片 204 無用區域 206 ，76，76’ 接觸式影像感測器模組3 透鏡 32 二極體 332 導光板 334 感測基板 35 控制電路 355 ，355， 長光電感測晶片 356, 356, 短光電感測晶 片358 ，358， 底片 61 反射式文件 62 晶圓 7, 7, 長晶片組 72， 72， 短晶片組 74，74’The substrate 11 () is sensed. The side of the sensing substrate 11Q is longitudinally arranged with a plurality of photo-sensing cymbals 112G' adjacent to the edges thereof. The photo-sensing wafers (10) are longitudinally spaced and equally spaced to form an image sensing array 112. A similar image of the array can also be found in the Republic of China Patent Bulletin No. 2 smear, and the scale forging clearly _ the photoelectric is equidistantly aligned on the sensing substrate. The image sensing array connected by a plurality of photo-sensing wafers has a splicing point in the middle and a part of the image at the position of the splicing point is lost. For the reflective file scanning, since the image of the county is low, _ can The software image is used to correct the image of the loss of the position of the splicing point, so as to obtain acceptable image data. However, for the system, the accuracy and the requirement of the (4) are generally higher, so the photo-sensing wafer corresponding to the width of the film must be The whole piece cannot have a continuation point. It is often calculated that the most common film width in a life of 35 mm is 35 gongs, and the corresponding photo-sensing wafer has a length of at least 27 mm, so it has reflection in the conventional technique. Document scanning and film scanning function Each spot sensing (9) in the image sensing module is 27 mm long. For the deconstruction _ face-to-face, the conventional (6) circular cutting method, as shown in the second figure, the wafer is cut as many as possible into a plurality of wafers 204 of the same length (eg 27 mm), the wafers (10) It can be used as the photovoltaic system containing the photoelectric circuit described in _ 1282620. "This kind of wafer cutting method will cause a lot of waste in the peripheral area of the wafer. For example, the blank area indicated by the second figure is the wafer. The useless area in the slab- slab _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The lower the cost, on the other hand, if the non-history in the wafer is larger, the cost will be higher. The surface is cut from the above-mentioned conventional wafer. The cost of the image sensing module and the sensing substrate manufactured by the same length of the wafer are difficult to control. Therefore, it is necessary to provide a low-cost contact image sensing module and its sensing substrate. Solving the defects existing in the prior art. ^ [Summary of the Invention] 'The object of the present invention It is to provide a kind of _-type shadow county group and its sensing substrate, which mainly considers the cost of the wafer, and reduces the cost of the single-chip photo-electrical sensor. The purpose of this is to form the purpose of this. The tree---the other age-providing---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- Photoelectric sensing wafer. A further object of the present invention is to provide a sensing substrate having a specific photovoltaic wafer arrangement, which can be combined with a reflective document scanning and a precision scanning of the negative film, and the sensing substrate The cost is low. «This hair is Jl (4), this is a daily service for _ kinds of contact image matching module 1282620 and film scanning contact image sensing module and its sensing substrate. The image sensing module The sensing substrate comprises an elongated printed circuit board and an image sensing array disposed on the printed circuit board, the image sensing array comprising the longitudinal direction of the printed circuit board At least one column A long photo-electricity measuring chip and a plurality of short-light-sensing measuring chips. The length of the long-light-sensing measuring chip is at least the sensing length required for scanning the width of the film, and the length of the image sensing array formed by the long and short photo-sensing chips At least the sensing length required to scan the width of the reflective file. When scanning, the light from the light source is irradiated onto the object to be scanned (reflective document or film), reflected by the object to be scanned to the lens, and concentrated by the lens to the image sense. Measure the array, and then the image sensing array senses the intensity of the light, converts the different light signals into electrical signals and outputs them to the printed circuit board. When scanning the negative film, it only needs long photo-sensing to measure the photo-inductance; when scanning In the case of a reflective file, all of the wafers on the image sensing array need to be photo-inducted. The long-length photo-sensing wafer and the plurality of short-light-sensing wafers can be cut from the same wafer. A long wafer set is cut longitudinally at the edge of the wafer or near the center, and the remainder is cut into a plurality of short wafer sets of the same length. The long chip group is further laterally cut into a plurality of long photo-sensing test wafers, and each short chip group is laterally cut into a plurality of short-light-sensing test wafers. Compared with the prior art of the present invention, the contact image sensing module of the present invention and the sensing substrate thereof can reduce the optical inductance of each piece of the sensing substrate under the premise of combining the reflective document scanning and the negative film scanning. The cost of measuring the wafer is started, the wafer utilization rate is maximized, and as many as possible photo-inductance crystal 1282620 pieces are cut out from the fixed-cost single-chip wafer, thereby reducing the cost of the _ base defect. [Embodiment] The present invention relates to a touch-sensitive _ display device, which is mainly used in a printer such as a scanner or a fax machine that combines the function of the document and the film scanning function, and refers to the second figure. The contact image sensing module 3 of the present invention mainly includes: a wide, longitudinally-sized body 3, a lens 32 and a light source 33 mounted in the upper housing space, and a cover that can seal the upper opening of the body 31. Body %, and a sensing substrate 35 mounted on the lower portion of the body & The lens 32 may be a lenticular lens _ or an optical lens of a high scale. The light source 33 includes a light emitting diode 332 and a light guide plate 334 extending in the longitudinal direction. When scanning, the light emitted by the light source 33 is irradiated onto the document to be scanned (reflective document or negative film) and is reflected by the light to be scanned, and the reflected light or the transmitted light is focused on the _substrate 35 by the lens 32 in the forward direction. . In the -spread embodiment, the light source 33 can be a white light source constructed of a Cold Cathode Flourcent Lamp, and the mated image sensing array is a color image sensing array. Since the structures of the body 31, the lens 32, the light source 33, and the cover 34 are all well-known techniques, they are not described herein again. The sensing substrate 35 will be highlighted below in conjunction with a preferred embodiment of the present invention. The fourth and fifth figures respectively disclose the first and second embodiments of the sensing substrate of the present invention. The sensing substrate 35 (35') includes a printed circuit board 352 (352') having a longitudinal dimension, an image sensing array 354 (354') disposed on the printed circuit board 352 (352') adjacent a longitudinal edge, and Control circuit 355 (355') on printed circuit board 352 (352,). The image sensing array 354 (354,) is composed of a long photo-inductive measuring chip (356) which is close to the longitudinal edge (abbreviated as long wafer) 356 (356,) and a plurality of short photo-electric sensing wafers of the same length (Jane 1282620 is called short (9)) 358. (358,) continually shouting. All of the photoinductors are arranged in a row, and the long wafer 356 (356,) is located at the beginning of the line (as shown in the fourth figure) or at the extreme end (as shown in the fifth figure). The term "long wafer" as used herein refers to a wafer that is sufficiently long to sense reflected light or transmitted light from the width of the film in a film scan. For a common % shame width film, the long wafer shatter should be greater than 27 mm. The so-called short wafer means that the length is less than the length of the long wafer (8). In the first and second embodiments, only the long wafer 356 (356') and the short wafer 358 (10), in the printed circuit board (10), are arranged at different positions, while the long wafer 356 (10), and the short wafer 358 ( The respective lengths and rotation principles of 358,) are the same, and therefore only the fourth and sixth embodiments will be described below. The long chip coffee is different from the control signal required for the short chip 358 to operate. The control circuit 355 sends different control signals (such as clock signals) for the long chip 356 and the short chip coffee to ensure the long and short chips 356, The ship can work normally. The contact type sensory group 3 of the present invention can be used for scanning of the reflective file 62 or for the film Μ. The accuracy required by the scanning film 61 is relatively high, so in the photo-sensing array 354, corresponding The length of the film 356 of the length of the film 61 must be a piece of positive film which can satisfy the length of the film ,. It cannot be spliced by a few short chips, which will result in loss of image at the stitching position of the film; and the scanning accuracy of the reflective file 62 The requirements are relatively low, and the cost of the wafer is taken into consideration. Therefore, in the prior art, a long array of image sensing is obtained by using a wafer splicing method, and the length of the image __ must be sufficient (four) the sense of the foot reflective file 62 Images that are measured in length and lost at the splicing can be complemented by software calculations. In the case of the negative film 61, only a long chip coffee is required for photo-sensing measurement; when scanning the reflective file 62 1282620, all the wafers on the image sensing array 354 need to be optically sensed. In the to fresh towel of the present invention, the control circuit 355 sends a corresponding clock signal according to the surface of the document to be scanned to drive the lying money. _Crystal red, which is brighter and brighter by Hezhiguang, converts the different light signals into electrical signals and outputs them to the corresponding circuit (not shown) on the printed circuit board, thus obtaining the width of the object to be scanned. Line image data. Then, the contact image sensory group 3 is moved along the length of the object to be scanned 61 or 62 by the driving surface (detailed), thereby obtaining a plurality of lines of image data on the width of the object to be scanned 61 or (10) until the end - The line is scanned. The wire is integrated into an electronic image file by the corresponding circuit on the printed circuit board 352. When scanning the film 61, the image sensing module 3 can use the color image sensing array with the white light source as the scanning-penetrating vehicle, or the white-light image system can be switched with the color light source to switch the red, green and blue color lights. Penetrating light source when scanning. In the present invention, the design of such an image sensing array 354 consisting of at least one long wafer 356 and a plurality of short wafers 358 is primarily considered in terms of wafer cost. For semiconductor processes, the cost of a wafer is fixed. If you cut into short wafers, you obviously can't meet the sensing length required for the film. If you cut and grow the S-chip, it will cause a large area of wafer waste. (as shown in the second figure). Considering that the optoelectronic characteristics of different wafers are far apart, it is not suitable to fabricate an image sensing module to intercept wafers from different wafers. Therefore, the present invention proposes a design scheme for designing two 11 1282620 wafers of different lengths on one wafer. Referring to the seventh figure, the first design of the long and short photo-sensing crystals in the contact image sensing module 3 of the present invention is on the same-chip. At the edge of the wafer 7, an elongated rectangular H-group 72 is designed, the rest as much as possible? The rectangular short chip set 74 is designed as a complex galax. The long wafer set 72 can be cut transversely into a plurality of long wafers 356 (356') of the same length, and each short wafer set 74 can be cut transversely into a plurality of short wafers 358 (358') of the same length. The short chips 356 (356,), 358 (358,) can be arranged in a plurality of image sensing arrays 354 (354 > in a manner disclosed in the drawings, and the fourth and fifth figures are further fabricated into a plurality of images. Sensing module 3. The blank portion in the figure indicates the useless area 76 ' Apparently in this design, the useless area is much less than the useless area in the second figure, that is, the utilization of the wafer is improved, and the single piece is The cost of the photo-sensing chip 3邡(6)358(358) is relatively reduced, and the cost of the contact image sensing module 3 is further reduced. Referring to the eighth figure, the contact image sensing of the present invention is shown. The second design of the long and short photo-sensing wafers on the same wafer in the module 3. On the wafer 7, the ten-long rectangular long wafer group 72, the rest of the design is as much as possible. Forming a plurality of vertically long rectangular short wafer sets 74, and the Similarly, the long wafer group 72 and the short wafer group can be respectively cut into a plurality of long wafers 356 (356,) and a plurality of short wafers 358 (358) in a lateral direction to be arranged into a plurality of image sensing arrays 354 (354, Further, a plurality of shirt image sensing modules 3 are manufactured. It is difficult to design a useless area 76 of the design towel, and the useless area 2G6 in the second figure is less reported. This shows that the design can also improve the crystal. The rounding rate reduces the manufacturing cost of the image sensing right group 3 from 1282620. Of course, the present invention has other design methods, and can design a plurality of long wafer groups on one wafer as needed, and can be based on the negative film. The position on the scanning platform is adjusted to adjust the position of the long wafer on the sensing substrate, and the number of long wafers in the image sensing array can be changed according to the number of simultaneously scanning the negative film. The above analysis shows that the conventional technology is quite good. Both the image sensing module 3 and the sensing substrate 35 of the invention have better wafer cost advantages, and the cost of the image sensing module or the sensing substrate which is made by using the long wafer can be reduced. 2 (10). In addition, The long and short wafer lakes are manufactured in the same-platelet _, which can make the photoelectric characteristics of the long and short wafers consistent, avoiding the difference in uniformity between the two and the image scanning is too bad. In summary, the invention has indeed met the invention. The patent application is made in accordance with the law, and the above is only a preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art in light of the spirit of the present invention are covered. Attached to the scope of the patent application. > [Simple description of the diagram] The first diagram is a schematic diagram of the composition of the conventional contact image sensing module. The second diagram is a conventional photo-sensing wafer on the wafer. Schematic diagram of the arrangement. The third figure is a schematic diagram of the composition of the contact image sensing module of the present invention. The fourth embodiment of the present invention is to disclose the arrangement of the photo-sensing wafer on the sensing substrate. The fifth figure is a structural diagram of the second embodiment of the present invention, which mainly discloses another arrangement of the photo-sensing wafer on the sensing substrate. 13 1282620 The sixth figure is not intended to disclose the correspondence between the long wafer and the negative film in the contact image sensing module of the present invention, and the corresponding relationship between the image sensing array and the reflective file. The seventh figure is a schematic diagram of an arrangement of the photodetector wafer of the present invention on a wafer. The eighth figure is a schematic diagram of another arrangement of the photo-sensing wafer on the wafer of the present invention. [Main component symbol description] cover 102, 34 lenticular lens array 104 light source 106, 33 body 108 丨, 31 printed circuit board 110, 352, 352 'image sensing array U2, 354, 354' photo-sensing wafer 1120 wafer 202 Wafer 204 useless area 206, 76, 76' contact image sensor module 3 lens 32 diode 332 light guide plate 334 sensing substrate 35 control circuit 355, 355, long optical sensor wafer 356, 356, short light inductor Wafer 358, 358, negative 61 reflective file 62 wafer 7, 7, long wafer set 72, 72, short wafer set 74, 74'