TWI281267B - Photodetector and method for manufacturing the same - Google Patents

Abstract

A photodetector and a method for manufacturing the same are disclosed. The photodetector comprises a SeZn substrate, a SeZn active layer located on the SeZn substrate, a first electrode located on a first portion of the SeZn active layer, and a second electrode located on a second portion of the SeZn active layer, in which the first electrode is separated from the second electrode.

Description

1281267 IX. INSTRUCTIONS OF THE INVENTION [Technical Field to Be Invented by the Invention] The present invention relates to a photodetector and a method of manufacturing the same, and a method for manufacturing a homogenous epitaxial selenization. A method in which a zinc (ZnSe) layer is used to form a photodetector on a zinc selenide substrate.

[Prior Art] In the light detecting element, the blue light to ultraviolet light detector can be widely used in various commercial and military applications, such as space communication, ozone layer monitoring, and flare detection, so the short-band blue light and ultraviolet light A photodetector is an important light detecting element. For the purpose, the blue-to-ultraviolet light detecting element is still composed of a light-polar body using a germanium material. However, @ 'constrained by the energy gap of Shi Xi, only L2eV at room temperature, the most sensitive wavelength of the Twilight is not in the blue to ultraviolet region, so the response of the Shi Xiguang diode in the blue to ultraviolet region Lower. With the development of techniques for fabricating optoelectronic components with wide direct gap materials, high performance solid state photodetector arrays can be fabricated for the blue to ultraviolet regions. For example, commercially available gallium nitride (GaN) photodetectors have been produced, and zinc selenide (ZnSe) is another wide direct gap material for blue to ultraviolet detectors. . Although blue-to-ultraviolet detectors made from a wide variety of ZnSe series have been validated, these ZnSe series photodetectors have grown on the surface of a nearly lattice-matched gallium arsenide (GaAs) substrate. However, it is known to those skilled in the art that a slight wafer mismatch (about 1281267 〇 27% at room temperature) still produces a large number of defects between the ZnSe and the GaAs substrate. As a result, when a very thick worm layer is grown on the surface of the GaAs substrate, a large number of defects generated by the ZnSe/GaAs interface will significantly reduce the efficiency of the ZnSe series photodetector. In order to solve the defect problem of the ZnSe/GaAs interface, a lattice matching < ZnSe series ternary or quaternary compound can be grown on the surface of the GaAs substrate. However, in such a process, it is quite difficult to accurately control the composition of each element to obtain a perfect lattice match. SUMMARY OF THE INVENTION In view of the fact that the crystals of zinc telluride thin films mostly grow in lattice mismatched groups* such as gallium antimonide, n, due to lattice mismatch, the ruthenium ruthenium film produces a large number of defects and makes the difference The density A is increased to reduce the photoelectric properties of the zinc telluride film. Therefore, the object of the present invention is to provide a photodetector having a selenium-producing active layer of homogenous epitaxy, so that the active layer can be lattice-matched with the substrate. Thus, defects can be prevented from being formed on the active layer and the substrate. The interface can greatly improve the quality of the active layer, which can significantly improve the photoelectric performance of the photodetector. Another purpose of the present invention is to provide a photodetector manufacturer A, which is a homogenous studded zinc-zinc active layer on a quartz-zinc-zinc substrate, so that it is quite easy to make a pole between the substrate and the active layer. The good t crystal lattice matches the special f and can effectively improve the product yield. In addition, by improving the lattice matching between the substrate and the active layer, the photoelectric performance of the active layer can be significantly improved, thereby not only effectively improving the responsiveness of the photodetector, but also reducing the equivalent power of the noise, and increasing the size by 1281267. The detection rate of the photodetector. According to the above object of the present invention, a photodetector is provided, comprising at least a zinc selenide substrate, a zinc selenide active layer on the zinc selenide substrate, and a first electrode on the first portion of the zinc selenide active layer; And the second electrode is located on the second portion of the zinc selenide active layer, wherein the first electrode is separated from the first electrode. According to a preferred embodiment of the present invention, the zinc selenide active layer is an n-type doped epitaxial layer, and the zinc selenide active layer has a thickness of between about 1 V and about 2/m. In addition, the first electrode is a first finger structure, and the second electrode is a second finger structure, wherein the first finger structure and the second finger structure are arranged in an interdigitated shape. According to an object of the present invention, a method for fabricating a photodetector includes at least providing a selenium substrate; a homogenous epitaxially grown zinc selenide active layer on the zinc selenide substrate; and forming a first electrode and a The two electrodes are respectively located on the first portion and the second portion of the actinic zinc active layer, wherein the first electrode is separated from the second electrode. According to a preferred embodiment of the present invention, the step of the epitaxial epitaxially grown zinc selenide active layer includes at least an electron beam epitaxy process, and the electron beam epitaxy process includes at least a use temperature control of about 1 〇〇〇 C 2 n The type of doping source, and the reaction temperature of the electron beam epitaxial process is controlled at about 3 〇〇. Further, the first electrode and the second electrode are arranged in a fork shape. The growth of the active layer of zinc selenide on the selenization substrate by homomorphic epitaxy can achieve excellent lattice matching characteristics of the active layer and the substrate, thereby greatly improving the quality of the active layer and improving the response of the photodetector. Degree, 1281267 Reduces the equivalent power of noise, and strengthens the photoelectric performance of the photodetector to improve the detection rate of the photodetector. [Embodiment] The present invention discloses a photodetector and a method for fabricating the same, which are based on a zinc selenide-based plate with a homogenous epitaxial zinc selenide active layer, so that the active layer can be lattice-matched with the substrate quite easily. The quality of the active layer can be effectively improved, thereby achieving the purpose of increasing the photoelectric performance of the photodetector. In order to make the description of the present invention more detailed and complete, reference is made to the following description and in conjunction with the drawings of Figures 8 through 8. Please refer to FIG. 1 , which is a perspective view of a light k-benefit in accordance with a preferred embodiment of the present invention. In an embodiment of the present invention, the photodetector can be, for example, a blue or ultraviolet light detecting element, and the photodetector (10) to, including the zinc zinc oxide substrate 102, the active zinc nitride layer J 〇4, And two electrodes 106 and electrodes 1 〇 8 having different electrical properties, and the active layer of the 巾 化 辞 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 成长 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极 电极®Zinc Active|! The different parts of 04 are separated by a distance. Referring again to Fig. i, when the photodetector is fabricated, the zinc selenide substrate 102 is first provided, followed by, for example, electron beam epitaxy, organic metallurgical vapor deposition (M0CVD) process or pulsed laser deposition.

The process of DeP〇Sltl〇n; PLD) is to grow the active layer of zirconia zinc on the zinc selenide substrate 丨〇2 in the same way. In the present invention, the doped or undoped epitaxial layer in the selenium-active layer 1 σ is preferably a type II doped epitaxial layer. When the zinc active layer 104 is composed of an n-type doped crystal layer, the n-type dopant may be, for example, chlorine (6)), filled (1) or indium ((4), etc.. The thickness of the stone is 1281267. Preferably, it is between about 1 center and about 2 _. In a preferred embodiment, the electron beam worm process is used to grow the same type of cat-developed Wei zinc active layer 1G4. In this electron beam μ process, ^Zinc and mosquito-derived materials, and "type doping source and carrier gas for carrying n-type dopants, wherein the u-doping source is preferably, for example, zinc chloride... called moth-containing material or indium-containing material And the carrier gas preferably includes, for example, a wind milk. Then, the zinc telluride substrate 1 () 2 is placed in a reaction chamber to carry out electron beam growth, and the reaction temperature is controlled, for example, at about 3 (10). And the temperature of the n-type #heterogeneous source composed of chlorination and the like is controlled to be about 1 〇, and an approximately thick zinc selenide active layer 1〇4 is formed on the bismuth substrate 102. The zinc selenide active layer 104 is formed. During the growth period, the high-energy electron reflectometer can be further utilized to monitor the quality of the crystal layer to optimize the growth conditions of the insect layer. The implementation of the financial j can be in the homogenous crystal growth of the Shixi Huazheng active layer, the step of 1〇4 and the subsequent electrode fabrication steps, the zinc selenide substrate j〇2 together with the zinc selenide active layer 1〇 The stacking structure of 4 is cleaned, wherein the cleaning process comprises at least immersing the zinc selenide substrate 1〇2 together with the selenization layer active layer 104 in a hydrochloric acid (HQ) diluent (for example, HChH2〇=1:1). After about 1 minute, the zinc selenide substrate 102 and the zinc selenide active layer 104 thereon are immersed in an oxidative buffer etchant (Buffered Oxide EtChlng' B〇E) for about 1 minute to remove the adhesion to the zinc selenide substrate 102 ” The native oxygen on the surface of the zinc active layer 104. Next, the zinc selenide substrate 102 and the zinc selenide active layer 104 on the zinc selenide substrate 102 are separately and sequentially washed with, for example, C-, methanol, and water for about 5 minutes. Referring to FIG. 1 and FIG. 2, after the zinc selenide substrate 1 〇 2 and the zinc selenide active layer 104 on the 1281267 are cleaned, the photodetector is defined by, for example, photolithography and lift-off techniques. 1〇〇 active area ιι〇, and simultaneously form electrode 106 And an electrode 1 〇 8. In an embodiment of the invention, when the active region 110 is defined and the electrode 1〇6 and the electrode 1〇8 are formed, a photoresist layer (not shown) is first applied to the zinc selenide active. The layer 1〇4 is further patterned by photolithography, and the photoresist layer is patterned to have an electrode pattern structure, wherein the electrode pattern structure exposes a portion of the selenium-reactive layer 1〇4, and the electrode The pattern structure may preferably be in the shape of a fork. Next, an electrode material layer (not shown) is formed on the exposed portion of the photoresist layer and the zinc antimonide active layer 1〇4 by, for example, a magnetron sputtering deposition technique. The material of the electrode material layer is preferably a transparent conductive material, such as indium tin oxide (IT0), indium zinc oxide (IZ〇), aluminum-doped zinc oxide, (Zn0: A1, AZ0) or titanium tungsten alloy (TiW). And the like, and the thickness of the electrode material layer is preferably, for example, between about 8 〇 nm and about 120 nm. During the growth of the electrode material layer 2, the sputtering source gas used includes at least argon gas, and the flow rate of the sputtering source gas is preferably controlled to be equal to about 1 〇 sccm, and preferably the anti-φ should be I The pressure is controlled between about 5 mTorr and about 10 Torr, and the reaction power is controlled between about 40 W and about i 〇〇 w. In a preferred embodiment of the present invention, the material of the electrode material layer is made of lanthanum tin oxide, and the electrode material layer is prepared by using a magnetron plating process to at least more, including using an indium tin oxide target. The composition of the indium tin oxide target may be, for example, about 9% by mass of indium oxide (IhO 3 ) and about 1% by weight of tin oxide (Sn〇 2 ). Then, the photoresist layer and the electrode material layer on the photoresist layer are removed by the removing method, and the electrode material layer on the exposed portion of the zinc selenide active layer 104 is left, so that the active layer 1G4 in the Shixihuazheng layer is A photodetector structure having a transparent conductive electrode/ZnSe <metal-semiconductor-metal (deletion) is formed on the electrode 1G6 and the electrode 10 1281267 108'. The electrode 〇6 and the electrode are preferably in a structure, wherein the electrode 106 is mainly composed of a plurality of fingers 114 connected to the core α邛112 at one end, and the electrode is mainly connected by σ邛. 116 is constituted by a plurality of fingers (1) connected to one end of the joint U6. In this embodiment, the area of the 'electrode i 〇 6 ' 丄 4 and the finger 118 of the electrode ( 10 ) defines the active area UG, and the surface area of the active area ιι can be, for example, 200x200 "m2, and The width 120 of the finger 114, the width 122 of the finger 118, and the finger distance 124 between the adjacent finger 114 and the finger 118 can each be, for example, about 1 〇 #m. After completing the light detection n structure of the MSM, further advance (step 4), for example, light micro-shadowing (4), define the wire bonding area on the joint portion 112 of the electrode (10) and the joint portion of the (10) U6, and then use, for example, a subtraction technique. A solder contact pad (not shown) is formed on the electrode 106 and the electrode 1〇8, wherein the solder contact pads have a thickness of about l#m′ and the material of the solder contact pad is preferably φ “gold film. Then, Μ The structure of the completed photodetector is fixed on the metal sealing shell (T〇_CAN) by, for example, a wire bonding machine, wherein the photodetector (10) can be electrically connected to the metal encapsulating shell through the aluminum wire. Connect to facilitate the measurement of the photodetector • 100 voltage-current 'light response and noise. Use high resolution χ _ light diffractometer (High Res〇luti〇n x_ray Diffraction; HURD), light The fluorescent light technology (4) Xian-(10)ce; PL) and Hall measurement techniques are used to measure the photoelectric characteristics of the grown zinc oxide active layer 104. See Figure 3, It is the same as a photodetector that is not in accordance with a preferred embodiment of the present invention. 1281267 HRXRD analysis of the epitaxial zinc selenide active layer. From the 3rd figure, the DCXRD curve of the active epitaxial zinc selenide active layer is shown, only the extremely strong stone westernization (004) peak is 21.5 arc sec. The half-height width (FWHM), which is extremely small, indicates that the crystal quality of the zinc selenide epitaxial layer can be further improved significantly by using a zinc selenide substrate. Referring to Figure 4, it is shown in accordance with the present invention. A PL spectrum of a homogeneous epitaxial zinc selenide active layer in a photodetector according to a preferred embodiment. From the room temperature pL spectrum of the zinc selenide homogenous epitaxial layer shown in Fig. 4, The strong PL peak falls at 2.725 eV (455 nm) and exhibits a half-height width (FWHM) of 71 meV, and a wide bond can be associated with a chlorine-receptor with a deep energy level of 2·0 eV 'in addition In the homogenous stone-zinc-zinc stupid layer, neither the near-band radiation (NBE) nor the shallow receptor-DA pair-related peaks were found. In other words, the intensity of the excitation band is far greater than that of DAp radiation. It’s going to be much stronger. 'This phenomenon once again points out that the homogeneous zinc selenide epitaxial layer is excellent. Crystal quality.

Referring to FIG. 5, there is shown a Hall measurement diagram of a homogeneous layer of the same crystallized magnetization in a photodetector according to a preferred embodiment of the present invention. From the temperature-dependent Hall measurement results of the austenitic zinc-like zinc-like layer of the A-character, it can be seen that the electron concentration increases in the low temperature region with increasing temperature, and reaches a maximum at about the time, and The priest „ , the initial mobility increase in the '° addition' order of the impurity charge scattering in the negative negative mobility may be caused by, on the other hand 'measured at room temperature in the high temperature region Μ I 7 double enthalpy, the crystal quality of the room temperature electron mobility of the wafer concentration, electron mobility and electrical resistivity are 12 1281267 Ω _cm '. 4xl016 cm 2, 250 cm2/Vs and 0.6 shift The rate again points out that the homogeneous zinc selenide epitaxial layer is better. Referring to Figure 6, a voltage and current diagram of a photodetector according to a preferred embodiment of the present invention is shown. The current of the zinc selenide gold semi-gold (MSM) photodetector _ voltage characteristic measurement in the dark and light irradiation, calculate the ITO deposition on the homogenous selenization layer, although the transparent contact electrode base barrier height About 〇.78eV, in other words, can provide The photodetector has larger photons and a larger photocurrent, but the lower Schindler barrier will also generate a larger dark current. Therefore, only the photocurrent to dark current ratio is about two orders. Referring to Figure 7, there is shown a light response diagram of a photodetector in accordance with a preferred embodiment of the present invention. The response from the detector shown in Figure 7 is in the blue to ultraviolet region. A fixed value is obtained, and at a wavelength of incident light of 45 0 nm, it can be found that under the bias of IV, the maximum response is about A13 A/w, and the corresponding ^:sub-efficiency is 35 %. It was found that the detector response 'approxed more than two orders of magnitude across the cut-off region. This phenomenon again indicates the excellent crystalline quality of the homogenous deuterated epitaxial layer. These values also indicate that the homogenous epitaxial zinc selenide MSM photodetector is The use of the blue to ultraviolet region is quite potential. Please refer to FIG. 8 , which illustrates a low frequency noise diagram of a photodetector according to a preferred embodiment of the present invention. Detector's noise power density, found that the spectrum can be utilized 1 / Fr (r = 1) law to obtain a fairly reasonable simulation 'This pure Ι / f noise indicates that the trapping state energy distribution is uniform, for the given 100 Hz bandwidth, the corresponding noise equivalent power (NEP) And the results of the normalized inspection 13 I28l267 are calculated to be 814 χ i〇-13 w and μ x ι〇ιι cmHz W ', which can be attributed in part to the inherent transparency and thus a greater response' - Part of it can be attributed to the better interface characteristics between the z 〇 z z heart and thus generate less noise. Use the same negative epitaxial growth zinc selenide active layer on the zinc selenide substrate, due to the active layer and the substrate The better lattice matching between the two causes the defect to be greatly reduced by J, so that the quality of the active layer of the selenium can be greatly improved, and the photoelectric characteristics of the selenium-producing active a can be enhanced to further improve the responsiveness of the photodetector, and It can reduce the noise power of the noise and obtain a higher detection rate. In a preferred embodiment of the present invention, the detection rate of the photodetector can be improved by the heterogeneous (tetra) crystallized photodetector 4 2X1W of the crucible, and the invention is replaced by a zinc selenide substrate to replace the 7 7xl〇u cmHzG 5W. -1. The present invention has been described above in terms of a preferred embodiment, and it is not intended to be limited to the scope of the present invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS A first schematic diagram is a perspective view of a photodetector in accordance with a preferred embodiment of the present invention. Figure 2 is a top view of the photodetector of Figure 1. Figure 3 is a HRXRD analysis diagram of a homogeneous epitaxial zinc selenide active layer in a photodetector in accordance with a preferred embodiment of the present invention. Figure 4 is a diagram showing the PL spectrum of the homogeneous amorphous zinc selenide active reed in the light detection 14 1281267 according to a preferred embodiment of the present invention. Fig. 5 is a diagram showing the Haii measurement of the active epitaxial zinc selenide active layer in a photodetector according to the embodiment of Taisu Day. Figure 6 is a diagram showing a voltage-current diagram of a photodetector in accordance with a preferred embodiment of the present invention. Figure 7 is a diagram showing the photoresponse of a photodetector in accordance with a preferred embodiment of the present invention. Figure 8 is a low frequency noise diagram of a photodetector in accordance with a preferred embodiment of the present invention. [Description of main component symbols] 100 : Photodetector 102 : Zinc SiC substrate 104 : Zinc SiC active layer 106 : Electrode 108 : Electrode 110 : Active region 112 : Joint portion 114 : Finger 116 : Joint portion 118 : Finger 120 : Width 122 : Width 124 : Finger distance 15

Claims (1)

1281267 The following year's bow month y day:) original ten, patent application range 1 · A photodetector, including at least: a stone zinc dioxide (SeZn) substrate; selenium chemical active layer is located on the zinc telluride substrate, wherein the selenium The zinc active layer is grown on the selenization substrate by a homogenous insect crystal; the first electrode is located on a first portion of the active layer of the zinc selenide; and the first electrode is located at one of the active layers of the selenization layer In part, wherein the first electrode is separated from the second electrode. The photodetector of claim 1, wherein the selenium-active layer is an n-type doped epitaxial layer. 3. The photodetector of claim 2, wherein the zinc selenide active layer has an n-type dopant, and the n-type dopant is selected from the group consisting of bismuth (ci) and iodine (I). And a group of indium (Ιη). 4. The photodetector of claim 1, wherein the actinic active layer is an undoped stupid layer. 5. The photodetector of claim 1, wherein the thickness of the active layer of the stone is between 1 // m and 2 // m. The photodetector of claim 1, wherein the material of the first electrode and the second electrode is a transparent conductive material. 7. The photodetector of claim 6, wherein the transparent conductive material is selected from the group consisting of indium tin oxide (yttrium), indium oxide (ΙΖΟ), doping! A group consisting of the oxidation of S (Zn〇: Al, ΑΖΟ) and the titanium-tungsten alloy (Tiw). The photodetector of claim 1, wherein the first electrode is a first finger structure, the second electrode is a second finger structure, and the first finger structure has a first joint portion and a plurality of first finger portions' the second finger structure has a second joint portion and a plurality of second fingers portion, and one of the first finger portions is connected to the first joint portion, One of the second fingers is connected to the second joint. 9. The photodetector of claim 8, wherein the first finger structure and the second finger structure are arranged in an interdigitated shape, and the first plurality of electrodes are arranged.卩 and a Hai second finger define an active area. 10. The photodetector of claim 9, wherein the active area has an area substantially equal to 200 x 200 #m2. The photodetector of claim 10, wherein the finger width of each of the first fingers and each of the second fingers is substantially equal to 17 1281267 1 〇# m 〇1 2. The photodetector of claim 11, wherein a distance between each of the first fingers and the adjacent second finger is substantially equal to 10 μm. The photodetector of claim 8, further comprising at least two soldering contact pads on the first joint portion and the second joint portion, wherein the solder contact pads are made of a gold film . 14. The photodetector of claim 9, wherein the thickness of the solder contact pads is substantially equal to 1//m 〇 15. The photodetector of claim 1, wherein the The thickness of one electrode and the second electrode is between substantially 8 〇 nrn and substantially 1 20 nm. The invention relates to a method for manufacturing a photodetector, comprising: providing a selenium substrate; homogenously growing a zinc oxide active layer on the zinc selenide substrate; and forming a first electrode and a second The electrodes are respectively located on a - part and a second part of the selenization active layer, wherein the first electrode is separated from the second electrode. 1281267 1 7. The method of fabricating a photodetector as described in claim 1 wherein the step of homoepitaxially growing the zinc selenide active layer comprises at least an electron beam epitaxy process. 18. The manufacture of a photodetector as described in claim 17 wherein the electron beam epitaxy process comprises at least a plurality of source materials' and the source materials comprise at least a word and selenium. The manufacturing method of the photodetector described in claim 17 wherein the electron beam epitaxial process comprises at least using an n-type dopant source and a carrier gas and the n-type dopant source It is selected from the group consisting of zinc chloride (ZnCl2), each tantalum material, and an indium-containing material, and the carrier gas includes at least hydrogen. 2〇· The manufacturer of the photodetector described in the ninth patent scope of Shen Qing, wherein the reaction temperature of one of the electron beam epitaxial processes is substantially controlled at 3〇0〇C 〇, 2丨·If applying The method of manufacturing a photodetector according to the second aspect of the invention, wherein the temperature of one of the n-type doping sources substantially controls 纟ι〇〇. . . The method of manufacturing a photodetector according to claim 16, wherein the step of growing the lithospheric active layer by homogenous crystal growth comprises at least 19 1281267 using an organometallic chemical vapor deposition (MOCVD) process or Pulsed laser deposition (PLD) process. 23. The method of fabricating a photodetector according to claim 16 wherein the zinc selenide active layer is an n-type doped epitaxial layer. The method of manufacturing a photodetector according to claim 16, wherein the zinc selenide active layer is an undoped epitaxial layer. The method of manufacturing a photodetector according to claim 16, wherein the thickness of the zinc selenide active layer is between 1//m and substantially 2 // m. The method of manufacturing a photodetector according to claim 16, wherein the step of growing the selenization active layer by homoepitaxial epitaxy and the step of forming the first electrode and the second electrode are further The method further includes at least cleaning the structure of the selenium zinc-zinc substrate and the zinc-selenide active layer, and the cleaning process comprises at least: immersing the structure of the selenium substrate and the selenium-promoting active layer into a hydrochloric acid diluent And continuing for a first time; immersing the structure of the zinc selenide substrate and the selenization active layer in an oxidizing buffer etchant (BOE) for a second time; performing a first cleaning step with acetone and continuing A third time; a second cleaning step with methanol is continued for a fourth time; a cleaning step of 20:281267 and & water is used for a fifth time. 27) If the scope of application for patents 帛% (4) the manufacture of the photodetector ^', the time of the middle of the sea is substantially equal to 1 minute, the second time is substantially equal to 1 minute, the second day of the barn is crowded μ - The day-to-day quality is equal to 5 minutes, the fourth time is actually devoted to 5 minutes, and the woman's knot τ «Hai fifth is essentially equal to 5 minutes. The method of manufacturing a photodetector according to claim 16, wherein the material of the first electrode and the second electrode is a transparent conductive material. The method for manufacturing a photodetector according to claim 16, wherein the material of the first electrode and the second electrode is selected from the group consisting of oxidized steel tin, indium zinc oxide, and aluminum doped oxidation. A group of zinc and titanium tungsten alloys. The method of manufacturing the photodetector according to claim 16 wherein the step of forming the first electrode and the second electrode comprises: forming a photoresist layer in a portion of the active layer of zinc selenide Wherein the photoresist layer has an electrode pattern structure to expose another portion of the zinc selenide active layer; depositing an electrode material layer on the photoresist layer and the exposed portion of the selenization layer active 21 1281267 layer; And removing the edge layer and the layer of the electrode material located in the photoresist, and leaving the active layer of the zinc selenide. The layer of electrode material is divided. /1· Manufacture of a photodetector as described in claim 3 of the patent application. The method wherein the step of depositing the layer of electrode material utilizes a magnetron sputtering process. The method of manufacturing a photodetector according to claim 31, wherein the magnetron sputtering process comprises at least: - using a sputtering source gas, wherein the sputtering source gas comprises at least argon gas, And the flow rate of the sputtering source gas is controlled to be substantially equal to l〇sccm; the control one reaction pressure is between substantially 5 mTorr and the substantial i〇mT〇rr; and the control one reaction power is between substantially 40 W and substantially 100 W. 33. The method of manufacturing a photodetector according to claim 31, wherein the first electrode and the second electrode are made of antimony tin oxide, and the magnetron sputtering process comprises at least using indium oxide. A tin target, and the indium tin oxide target is composed of 90% indium oxide (11^〇3) and 10〇/〇 of vaporized tin (Sn02). 34. The manufacture of a photodetector as described in claim 16 of the patent application 22 1281267 Method wherein the thickness of the first electrode and the second electrode is between substantially SOnm and substantially i2 〇 nm. The method of manufacturing the photodetector of claim 16, wherein the first electrode is a first finger structure, the second electrode is a second finger structure, and the first finger shape The structure has a first joint portion and a plurality of first finger portions, the second finger structure has a second joint portion and a plurality of second fingers, and one end of the first fingers is connected to the first joint One end of the second fingers is connected to the second joint. The method of manufacturing a photodetector according to claim 35, wherein the first finger structure and the second finger structure are arranged in an interdigitated shape, the first finger portions and the first The two fingers define an active area. 3 7. The method of manufacturing a photodetector as described in claim 36, wherein the area of the active region is substantially equal to 2 〇〇 x 2 〇〇 # m2. 38. A method of fabricating a photodetector according to claim 37, wherein the finger width of each of the first fingers and each of the second fingers is substantially equal to 10 // m. The method of manufacturing a photodetector according to claim 38, wherein a distance between each of the first fingers and the adjacent second fingers is substantially equal to l〇//m. The method for manufacturing a photodetector according to claim 35, wherein after forming the first electrode and the second electrode, at least a solder contact is formed at the first/joining portion. With the second connection s. The material of the solder contact pads is a gold film. 41. The manufacture of photodetectors as described in claim 40, wherein the thickness of the solder contact pads is substantially equal to 丨^❿. 42. A method of fabricating a photodetector according to claim 40, wherein each of the recording contact contacts, the n-line and the metal package (ΤΟ-CAN) are electrically connected. twenty four