1279286 五、發明說明（1) 【發明所屬之技術領域】 本發明係有關於一種研磨整理器，特別關於一種利用 一氣體於研磨整理器底部形成一氣旋，來保護研磨整理器 免於具腐姓性研磨漿料的腐餘。 【先前技術】 研磨是將一物體表面與一研磨墊接觸，並進行相對運 動使產生磨擦，進而損耗該物體表面成份。由於壓力集中 在表面突出部分，使得該處的物質耗損率較快，因此經過 一段時間後，可使物體表面具有平坦化（ρ 1 a n a r i z a t i ο η ) 的效果。研磨墊經使用一段時間後，會產生特性劣化，因 此往往需要一研磨整理器，來去除研磨墊上微細孔内的研 磨殘留物，以便使研磨符合再現性（r e p e a t a b i 1 i t y )和穩 定性（stability)的要求。 但，在鎢的CMP製程中，主要係利用表面佈滿砥粒的 研磨墊與含有鐵氰化鉀、硝酸鐵、碘酸鉀和過氧化氫等成 分所組成的研磨漿料，來同時以化學反應和機械式研磨等 雙重的加工動作，進行晶圓表面之平坦化處理，但是該呈 現腐蝕性的研磨聚料將對研磨整理器的金屬基底造成腐蝕 ,而導致研磨整理器的外觀與砥粒的損耗。 因此針對上述問題而提出一種研磨整理器，不 僅玎以ί執肉磨漿料對研磨整理器的侵蝕，更可以 降低冰田太人 裔而產生的細微刮傷，進而延長研 磨墊的使用命〒。 ％ 【發明内容】1279286 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field The present invention relates to a polishing apparatus, and more particularly to a gas cyclone formed at the bottom of a polishing apparatus by using a gas to protect the polishing apparatus from the rot The residual of the abrasive slurry. [Prior Art] Grinding is to contact an object surface with a polishing pad and perform relative motion to cause friction, thereby depleting the surface composition of the object. Since the pressure is concentrated on the surface protruding portion, the material loss rate at this place is faster, so that the surface of the object can be flattened (ρ 1 a n a r i z a t i ο η ) after a certain period of time. After the polishing pad has been used for a period of time, characteristic deterioration occurs, so a polishing finisher is often required to remove the polishing residue in the micropores on the polishing pad so that the polishing conforms to reproducibility and stability. Requirements. However, in the CMP process of tungsten, the polishing slurry consisting of potassium ferricyanide, ferric nitrate, potassium iodate and hydrogen peroxide is mainly used as a polishing slurry with a surface covered with cerium particles to simultaneously chemistry. Double processing of the reaction and mechanical polishing to flatten the surface of the wafer, but the corrosive abrasive aggregate will corrode the metal substrate of the finisher, resulting in the appearance of the finisher and the grain Loss. Therefore, in order to solve the above problems, a grinding and finishing device is proposed, which not only smashes the erosion of the polishing device by the pulverizing slurry, but also reduces the slight scratches caused by the ice field, thereby prolonging the use of the polishing pad. . % 【Contents】
1279286 五、發明說明（2) 本發明之主要目的，在於提供一種研磨整理器，其能 夠避免腐蝕性研磨漿料對研磨整理器造成腐蝕，而有2的 延長研磨整理器的使用壽命。 種研磨整理器，其能 本發明之另一目的，在於提供 夠有效的延長研磨塾的使用壽命。 本發明之又一目的，在於提供一種研磨整理器，其能 夠有效的降低成本。 ’ 本發明之再一目的，在於提供一種研磨整理器，其能 夠避免因研磨整理器表面的缺陷，而導致研 ^ 痕的機率。 本發明為一種研磨整理器，其係包括有一下端外周緣 "外延伸形成一延伸部之本體，延伸部之底部凸設一凸環 ，而，延伸部與該凸環形成一容置空間；一位於凸環底面 上的環狀研磨板，其上設有複數個砥粒，且環狀研磨板底 面具f複數個連通内外側之溝槽；以及一位於本體上用以 /主入氣體到容置空間再由溝槽排出的氣體通道。 >兹為使貴審查委員對本發明之結構特徵及所達成之 功效更有進一步之瞭解與認識，謹佐以較佳之實施例圖及 配合詳細之說明，說明如後： 【實施方式】 本發明係關於一種研磨整理器，其係可被廣泛地應用 到半導體製程中的 CMP( chemical mechanical polish) 製程’來進行許多不同製程後的平坦化製程，因此本發明 於此係舉一較為恰當之範例，對鎢金屬層進行CMP製程為1279286 V. INSTRUCTION DESCRIPTION (2) A primary object of the present invention is to provide a lapping organizer which can prevent corrosive abrasive slurry from causing corrosion to the lapping machine, and which has a prolonged service life of the lapping organizer. A polishing organizer, which is another object of the present invention, is to provide an effective extension of the service life of the grinding crucible. It is still another object of the present invention to provide a lapping organizer which is capable of effectively reducing costs. A further object of the present invention is to provide a lapping organizer which can avoid the possibility of scratching due to defects in the surface of the lapping organizer. The present invention is a grinding and arranging device, which comprises a body having a lower outer peripheral edge and extending outwardly to form an extending portion, a convex ring is protruded from a bottom portion of the extending portion, and the extending portion and the convex ring form an accommodating space; An annular grinding plate on the bottom surface of the convex ring, wherein a plurality of enamel particles are arranged thereon, and the ring-shaped grinding plate bottom mask f has a plurality of grooves connecting the inner and outer sides; and a body is disposed on the body for the main gas to The gas passage through which the accommodation space is discharged by the groove. <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Regarding a polishing finisher which can be widely applied to a CMP (chemical mechanical polish) process in a semiconductor process to perform a planarization process after many different processes, the present invention is a more appropriate example. , the CMP process for the tungsten metal layer is
1279286 五、發明說明（3) 一實施例來說明本發明，習知此領域的人士應有的認知是 許多的可以改變，例如研磨漿料的化學成分、研磨板的形 狀設計與材質等，但這些一般的替換無疑地亦不脫離本發 明的精神及範疇。 請一併參閱第一圖與第二圖，本發明之研磨整理器1Q ，包含一本體1 2，本體1 2下端外周緣向外延伸形成一延伸 部1 4，延伸部1 4之底部凸設一凸環1 6，延伸部1 4與凸環1 6 形成一容置空間1 8 ;凸環1 6底面上設有一環狀研磨板2 0， 其上設有複數個材質為鑽石之砥粒（於圖中未示），以及複 數個呈放射狀排列且連通環狀研磨板2 0内外側的溝槽2 2 ; 一位於本體1 2上用以注入氣體至容置空間丨8的氣體通道24 ，其中環狀研磨板2 0之材質可以為鎳-鉻合金，且本體1 2 係可以旋轉。 請同時參閱第一圖、第二圖與第三圖，當CMP製程經 過一段時間後’研磨墊2 6表面產生光滑化（g 1 a z i n g)，而 導致研磨塾2 6表面讓研漿流到晶片表面的通路（^ a n n e 1 ) 和抓取研磨顆粒的能力下降，CMP的研磨速率下降，因此 使用研磨整理器1 0來對研磨墊2 6表面進行調節化 (Conditioning)的動作，此時因為鎢的金屬層在進行化學 ;機械研磨時’主要係利用研磨墊26與含有鐵氰化钟、頌^ 鐵、碘酸鉀和過氧化氫等成分所組成的研磨聚料（於圖中 未示），來同時以化學反應和機械式研磨等雙重的加工動 作進行晶圓表面之平坦化處理，因此如第二圖 _ 布一®1所不，以本 發明之研磨整理器10來對去除研磨墊26上微細孔内的研磨1279286 V. DESCRIPTION OF THE INVENTION (3) An embodiment is described to explain the present invention. It is known in the art that many changes can be made, such as the chemical composition of the polishing slurry, the shape design and material of the polishing plate, etc., but These general alternatives do not depart from the spirit and scope of the invention. Referring to the first and second figures, the polishing apparatus 1Q of the present invention comprises a body 1 2, and the outer periphery of the lower end of the body 1 2 extends outward to form an extension portion 14 , and the bottom portion of the extension portion 14 is convex. a convex ring 16 6 , the extending portion 14 and the convex ring 16 form an accommodating space 18; the bottom surface of the convex ring 16 is provided with an annular grinding plate 20, and a plurality of diamonds are arranged thereon. (not shown in the drawing), and a plurality of grooves 2 2 radially arranged and communicating with the inner side of the annular grinding plate 20; a gas passage for the gas to the accommodating space 丨8 on the body 12 24, wherein the material of the annular grinding plate 20 may be a nickel-chromium alloy, and the body 12 can be rotated. Please refer to the first figure, the second figure and the third figure at the same time. When the CMP process passes for a period of time, the surface of the polishing pad 26 is smoothed, which causes the surface of the polishing pad to let the slurry flow to the wafer. The surface passage (^ anne 1 ) and the ability to grasp the abrasive particles are lowered, and the polishing rate of the CMP is lowered. Therefore, the polishing device 10 is used to perform the conditioning operation on the surface of the polishing pad 206, at this time because of tungsten. The metal layer is subjected to chemistry; mechanical polishing is mainly performed by using a polishing pad 26 and a polishing aggregate composed of a composition containing a ferricyanide clock, bismuth iron, potassium iodate, and hydrogen peroxide (not shown). At the same time, the wafer surface is flattened by a double processing operation such as chemical reaction and mechanical polishing. Therefore, as shown in the second drawing, the polishing device 10 of the present invention removes the polishing pad. Grinding in the fine holes on the 26
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五、發明說明（4) 殘留物時，由氣體通道2 4通入一由乾淨空氣（(：1“11(11^ air)與氮氣（N2)混合之氣體至容置空間18，然後由溝槽22 排出，此時氣體會形成一氣旋，將殘留於研磨塾2 6上之具 腐蝕性的研磨漿料驅離，大幅度的降低殘留於研磨塾2 6上 之具腐蝕性研磨液接觸到研磨整理器1 0之研磨板2 0 ’而導 致研磨板2 0遭受到腐蝕的機率，且進而避免了習知製程因 研磨板2 0遭受到腐餘而對研磨塾2 6造成微刮痕，導致研磨 墊2 6壽命縮短的缺點。 綜上所述，本發明係為一種研磨整理器，其係利用〜 氣旋於進行研磨墊表面調節時，將具腐餘性之研磨襞料的 驅離，來避免了具腐蝕性之研磨漿料對研磨整理器所造成 的損傷與對研磨墊所造成的不良影響。 & 惟以上所述者， 用來限定本發明實施 圍所述之形狀、構造 ，均應包括於本發明 僅為本發明一較佳 之範圍，故舉凡依 、特徵及精神所為 之申請專利範圍内 實施例而已，並非 本發明申請專利|| 之均等變化與修錦5. Description of invention (4) When the residue is passed, a gas mixed with clean air ((: 1"11 (11^ air) and nitrogen (N2) is mixed into the accommodating space 18, and then by the ditch. The groove 22 is discharged, at which time the gas forms a cyclone, and the corrosive polishing slurry remaining on the polishing crucible 26 is driven away, and the corrosive polishing liquid remaining on the polishing crucible is greatly reduced. Grinding the finishing plate 10 of the grinding plate 20' causes the grinding plate 20 to be subjected to corrosion, and further avoids the micro-scratch of the grinding 塾26 caused by the conventional process being damaged by the grinding plate 20, The invention has the disadvantage that the life of the polishing pad 26 is shortened. In summary, the present invention is a polishing and finishing device which uses a cyclone to perform the adjustment of the surface of the polishing pad to drive away the abrasive material having the residual property. The damage caused by the corrosive abrasive slurry to the polishing apparatus and the adverse effects on the polishing pad are avoided. The above, however, is used to define the shape and structure of the present invention. All of them should be included in the present invention as only a preferred embodiment of the present invention. It is the case that the patents within the scope of patent application are based on the characteristics, characteristics and spirits, and are not equivalent to the patent application of the invention.
1279286 圖式簡單說明 【圖示簡單說明】 第一圖為本發明之結構示意圖。 第二圖為本發明之研磨板結構示意圖。 第三圖係本發明之實施例示意圖。 【圖號對照說明】 1 〇研磨整理器 12本體 1 4延伸部 1 6凸環1279286 Brief description of the drawing [Simplified illustration] The first figure is a schematic structural view of the present invention. The second figure is a schematic view of the structure of the grinding plate of the present invention. The third figure is a schematic diagram of an embodiment of the invention. [Figure number comparison description] 1 〇 polishing finishing device 12 body 1 4 extension 1 6 convex ring
1 8容置空間 2 0環狀研磨板 2 2溝槽 2 4氣體通道 2 6研磨墊1 8 accommodating space 2 0 annular grinding plate 2 2 groove 2 4 gas channel 2 6 polishing pad
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