1277664 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種潔淨裝置，且特別是有關於一種 用於電化學電鍍後之晶圓潔淨裝置。 【先前技術】 在半導體製程中，許多製程階段後通常會在晶圓上留 下反應之殘餘物，因而需要反覆進行潔淨、清洗晶圓之步 驟’以防止製程殘餘物影響後續之製程。在電化學電鍍 (electrochemical plating ; ECP)後，例如晶圓之銅電鍍製 程，晶圓表面上除了會殘留帶正電荷之銅離子，亦會殘留 帶負電荷之離子或微粒，例如矽氧化物或氟、碳化物微粒， 因此會產生因靜電吸附使微粒附著在晶圓表面上的問題。 一般之潔淨方式為.使用去離子水或硫酸溶液進行清 洗。以去離子水直接清洗之方式，主要係利用凡得瓦力將 污染物沖洗掉，並不易有效清除具有電荷吸附特性之微 粒。而使用硫酸溶液潔淨晶圓表面之方式，因硫酸溶液本 身為一強氧化劑，而且會造成破壞性的蝕刻效果，故容易 對晶圓造成傷害。因此需要—種潔淨裝置與方法，能達到 有效清洗電化學電職之晶目，並且降低對晶圓之破壞性 餘刻。 【發明内容】 因此本發明的目的就是在提供一種後電化學電鍍 (post ECP)潔淨裝置與方法，將電化學電鍍後之晶圓表面帶 1277664 電荷之微粒移除。 本發明的另一目的是在提供一種後電化學電鍍潔淨裝 置與方法，避免清洗過程中對晶圓產生蝕刻效果，有效清 洗電化學電鍍後之晶圓。 根據本發明之上述目的，提出一種後電化學電鍍潔淨 之裝置，至少包含一去離子水供應裝置、一擰檬酸供應裝 置、一流量調節閥、一混合槽、一流量調節裝置及一晶圓 旋轉清洗（spin rinse dry ; SRD)裝置。 其中去離子水供應裝置具有一第一管路，檸檬酸供應 • - ； . 裝置具有一第二管路，流量調節閥位於第二管路上，用以 調節來自檸檬酸供應裝置之擰檬酸溶液之擰檬酸流量，藉 此控制混合擰檬酸溶液之濃度。 混合槽與第一管路及第二管路相連接，接收並混合去 離子水及擰檬酸溶液成為一混合檸檬酸溶液，並具有一第 三管路與SRD裝置相連接，將混合檸檬酸溶液輸送至SRD 裝置，對晶圓進行旋轉、清洗及乾燥之潔淨步驟。流量調 節裝置係位於第三管路上，用以控制輸送至SRD裝置的混 合檸檬酸溶液之一混合流量。 本發明之另一態樣係為一種後電化學電鍍潔淨之方 法，至少包含：提供一去離子水、提供一檸檬酸溶液、調 節檸檬酸溶液之一擰檬酸流量、混合去離子水與檸檬酸溶 液，以形成一混合擰檬酸溶液、調節混合檸檬酸溶液之混 合流量、以及旋轉清洗晶圓。 因此，本發明之後電化學電鍍潔淨裝置，藉由預先調 控潔淨溶液中檸檬酸濃度與混合流量，於SRD裝置實施旋 7 1277664 轉清洗步驟時，可有效移除晶圓表面之離子雜質，同時也 減夕、對M圓產生具破壞性的腐餘。 【實施方式】 針對^知技術的問題’本發明提供一^種後電化學電鍍 潔淨裝置’利用含有檸檬酸之溶液，可使晶圓表面的帶負 電微粒因酸驗值之改變，而與晶圓帶相同之正電荷，藉此 ^成静電雙層互斥（electrostatic double layer repulsed ; EDR)，以達潔淨之效果。另外，擰檬酸亦作為一螯合劑， 將帶正電之鋼離子與銅氧化物自晶圓表面移除。本發明之 潔淨裝置主要是用於電化學電鍍製程後，進行下一製程前 之潔淨步驟，以預先混合方式，控制混合之檸檬酸溶液濃 度與流量，達到較佳潔淨效果。 參照第1圖，其繪示依照本發明一較佳實施例的一種 後電化學電鍍潔淨裝置之結構示意圖。本發明之裝置包含 有一去離子水供應裝置1 〇2、一擰檬酸供應裝置1 、一流 量調節閥106、一混合槽108'—流量調節裝置11〇及一 S:RD 裝置112。 其中’去離子水供應裝置102具有一第一管路114a， 檸檬酸供應裝置104具有一第二管路U4b，流量調節閥1〇6 位於第二管路114b上，例如為一針閥，用以調節來自檸檬 酸供應裝置104之檸檬酸溶液之檸檬酸流量，混合槽1〇8 與第一管路114a及第二管路114b相連接，接收並混合去 離子水及擰檬酸溶液成為一混合檸檬酸溶液，並具有一第 三管路U4c與SRD m相連接，將混合棒樣酸溶液輸 8 1277664 送至SRD裝置112，以對晶圓（未圖示）進行旋轉清洗之潔 淨步驟，其中藉由調節檸檬酸流量，以控制混合檸檬酸溶 液之濃度。 * 流量調節裝置110係位於第三管路114c上，用以控制 輸送至SRD裝置112的混合檸檬酸溶液之混合流量。因 此，進行清洗之潔淨溶液於進入SRD裝置112前，已預先 混合好，達到預定之濃度及流量。 同樣參照第1圖，本發明一較佳實施例中，潔淨裝置 更包含：一手動閥120，位於第二管路114b上，擰檬酸供 應裝置104與流量調節閥106之間，用以在第二管路114b 前段提供一手動控制方式，控制第二管路114b上檸檬酸溶 液之傳送、一第一氣閥122a，位於第一管路114a上，用以 控制去離子水之傳送、一第二氣閥122b，位於第二管路114b 上，流量調節閥106與手動閥120之間，在控制上與第一 氣閥122a同時作動。 一壓力開關124,與第一氣闊122a及第二氣閥122b 相連接，具有一訊號傳遞裝置126，與檸檬酸供應裝置104 相連，當第一氣閥122a開啟時，第二氣閥122b同時開啟， 此時壓力開關124因開啟時之氣壓而觸發，發送一請求訊 號至檸檬酸供應裝置104,促使檸檬酸供應裝置104提供擰 檬酸溶液。 一止回閥128，位於第二氣閥122b與流量調節閥106 之間，用以防止供應之檸檬酸溶液產生逆流、一流量感測 器130,位於流量調節閥106之後，偵測檸檬酸溶液之流量 是否正確。混合槽10 8更包含一液位感測器13 2，當液位達 1277664 到一設定之高液位值時，液位感測器132發出一請求訊號 使第一氣閥122a關閉，以阻止去離子水及擰檬酸溶液之傳 送。 ，參照第2圖，其繪示依照本發明另一較佳實施例的一 種後電化學電鍍潔淨裝置之結構示意圖。依據第1圖之較 佳實施例，在本發明另一較佳實施例中，潔淨裝置更包含： 一傳送閥234,位於第三管路214c上，控制來自混合槽208 - 之混合檸檬酸溶液。 春 一供給槽236，位於第三管路214c上，接收並暫存通 過傳送閥234之混合檸檬酸溶液，具有一輸送感測器238 與一低液位感測器240,當供給槽236内液位低於一輸送液 位值，輸送感測器238發出一訊號使傳送閥234開啟，讓 混合擰檬酸溶液自混合槽208輸送至供給槽236中，低液 位感測器240則用於，當供給槽236内液位低於一低液位 值時，發出訊號表示潔淨裝置處於異常狀態，其中低液位 值小於傳送液位值。 參 一供給閥242，位於第三管路上214c，供給槽236之 後，用以控制來自供給槽236之混合擰檬酸溶液。流量調 節裝置210之後更連接一流量計242,用以偵測混合檸檬酸 溶液的流量狀態，確保正確之流量。SRD裝置212前更包 含一閥門244，用以控制混合檸檬酸溶液之傳送。 同樣參照第2圖，以一範例說明應用本發明於後電化 學電鍍晶圓之潔淨製程。首先，當開啟第一氣閥222a，去 離子水供應裝置202即提供去離子水於第一管路214a中， 壓力開關224受開啟之氣壓觸發，發送訊號至擰檬酸供應 1277664 裝置204,使檸檬酸供應裝置204提供擰檬酸溶液於第二管 路214b中，此檸檬酸溶液例如為美商應用材料公司開發之 ElectraClean溶液。第二氣閥222b與第一氣閥222a在控制 上相連因而同時開啟，以傳輸擰檬酸溶液。 去離子水經由第一管路214a流至混合槽208，擰檬酸 溶液則於第二管路214b中流經過一止回閥228、一流量調 節閥206及一流量感測器230，其中利用止回閥228防止檸 檬酸溶液逆流，並利用流量調節閥206調整擰檬酸溶液流 量，藉此控制所需要的混合擰檬酸溶液之濃度，欲達較佳 潔淨效果，濃度約為0.1 %至10%，較佳為0.36%至1.2%。 而流量感測器230可用以偵測所供應檸檬酸溶液之流量是 否正確。 混合槽208接收去離子水及檸檬酸溶液，提供一混合 環境，將混合後產生的混合擰檬酸溶液自第三管路214c輸 出，並利用混合槽208内的液位感測器232，根據混合槽 208内的液位狀況判斷是否繼續執行混合動作，當液位達到 一預定的高液位值，液位感測器232發出一請求訊號使第 一氣閥222a關閉，阻止去離子水之傳送，而第二氣閥222b 亦同時關閉，阻止檸檬酸溶液之傳送，壓力開關224因第 一氣閥222a之關閉，停止發送對擰檬酸供應裝置204之請 求訊號，擰檬酸供應裝置204因此停止供應檸檬酸溶液。 混合擰檬酸溶液自混合槽208、經過一傳送閥234進入 一供給槽236,暫存混合檸檬酸溶液。利用供給槽236内的 輸送感測器238,根據供給槽236内的液位狀況判斷是否須 讓傳送閥234開啟，使混合檸檬酸溶液流入供給槽236，當 11 1277664 液位低於一預定之輸送液位值，輸送感測器238發出一訊 號使傳送閥234開啟，讓混合檸檬酸溶液流入供給槽236 中。並利用一低液位感測器240判斷整個潔淨裝置是否處 •於異常狀態，當供給槽236内液位低於一設定之低液位值 時，低液位感測器240發出訊號，表示潔淨裝置處於異常 狀態，其中低液位值小於輸送液位值。 當混合檸檬酸溶液自供給槽236輸出，流經一供給閥 242，再流經一流量調節裝置210、一流量計244及一閥門 ® 246，最後進入SRD裝置212，執行旋轉清洗、乾燥之潔淨 步驟。利用流量調節裝置210調整所需要的混合檸檬酸溶 液之混合流量，流量約為100毫升/分鐘至2000毫升/分鐘， 較佳為約450毫升/分鐘至1300毫升/分鐘。並利用流量計 244偵測混合檸檬酸溶液的流量狀態，確保正確之流量，閥 門246用以控制進入SRD裝置212前之混合檸檬酸溶液。 使用混合檸檬酸溶液進行清洗之時間，較佳的約為5秒至5 分鐘，更佳的為約10秒至40秒。 # 本發明之另一態樣係為一種後電化學電鍍潔淨之方 法。參閱第3圖，其繪示依照本發明之後電化學電鍍潔淨 晶圓方法之流程圖。步驟302，提供一去離子水，其流量係 為一預設值。步驟304，提供一檸檬酸溶液。步驟306，調 節檸檬酸溶液之擰檬酸流量。步驟308，混合去離子水與檸 檬酸溶液，以形成一混合擰檬酸溶液。步驟310，調節混合 檸檬酸溶液之混合流量。步驟312，旋轉清洗晶圓。 其中，混合檸檬酸溶液之濃度係藉由調節擰檬酸溶液 之流量所決定，濃度約為〇」％至10%，較佳為0.36%至 12 1277664 古。:5擰檬酸溶液之流量約為100毫升/分鐘至2嶋 笔物鐘，較佳為約450毫升/分鐘至_毫升/分鐘。使 用混合擰檬酸溶液之清洗時間，較佳的約為5秒至5分鐘， 更佳的為約1 〇秒至4〇秒。 由上述本發明較佳實施例可知，應用本發明具有下列 :憂點。利用本發明之後電化學電鍍潔淨裝置及$法，於削 裝=際清洗晶圓之前，預先調控潔淨溶液中檸檬酸濃度 與二里，不僅有效移除晶圓表面之帶電荷雜質，更降低對 晶圓表面產生破壞性蝕刻，以達到較佳的潔淨效果。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限疋本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 第1圖係繪示依照本發明一較佳^實施例的一種後電化 學電鍍潔淨裝聋之結構示意圖。 第2圖係繪示依照本發明另一較佳寬魏j过的一種後電 化學電鍍潔淨裝置之結構示意圖。 第3圖係繪示依照本發明之後電化學電鍍潔淨晶圓方 法之(旅程圖。 13 1277664 【主要元件符號說明】 102 ： 去離子水供應裝置 106 ： 流量調節閥 110 ： 流量調節裝置 114a :第一管路 114c :第三管路 122a :第一氣閥 124 ： 壓力開關 128 ： 止回閥 132 ： 液位感測器 202 ： 去離子水供應裝置 206 ： 流量調節閥 210 ： 流量調節裝置 214a :第一管路 214c :第三管路 222a :第一氣閥 224 ： 壓力開關 228 ： 止回閥 232 ： 液位感測器 236 ： 供給槽 240 ： 低液位感測器 244 ： 流量計 104 ： 擰檬酸供應 裝置 108 ： 混合槽 112 ： SRD裝置 114b :第二管路 120 ： 手動閥 122b :第二氣閥 126 ： 訊號傳遞裝 置 130 ： 流量感測器 204 ： 擰檬酸供應 裝置 208 ： 混合槽 212 ： SRD裝置 214b :第二管路 220 ： 手動閥 222b :第二氣閥 226 ： 訊號傳遞裝 置 230 ： 流量感測器 234 ： 傳送閥 238 ： 輸送感測器 242 ： 供給閥 246 ： 閥門 141277664 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a cleaning apparatus, and more particularly to a wafer cleaning apparatus for electrochemical plating. [Prior Art] In the semiconductor process, after many process stages, the residue of the reaction is usually left on the wafer, and the step of cleaning and cleaning the wafer needs to be repeated to prevent the process residue from affecting the subsequent process. After electrochemical plating (ECP), such as copper plating of wafers, in addition to positively charged copper ions on the surface of the wafer, negatively charged ions or particles, such as antimony oxide or Fluorine and carbide fine particles cause a problem that particles adhere to the surface of the wafer by electrostatic adsorption. The general cleaning method is to use deionized water or sulfuric acid solution for cleaning. Direct cleaning with deionized water mainly uses van der Waals to wash away the contaminants, and it is not easy to effectively remove the particles with charge adsorption characteristics. The use of a sulfuric acid solution to clean the surface of the wafer, because the sulfuric acid solution itself is a strong oxidant, and will cause a destructive etching effect, it is easy to damage the wafer. Therefore, there is a need for a clean apparatus and method that can effectively clean the crystal of the electrochemical power and reduce the destructive remnant of the wafer. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a post ECP cleaning apparatus and method for removing 1277664 charged particles on an electrochemically plated wafer surface. Another object of the present invention is to provide a post-electrochemical plating cleaning apparatus and method which avoids etching effects on a wafer during cleaning and effectively cleans the wafer after electrochemical plating. According to the above object of the present invention, a post-electrochemical plating cleaning apparatus is provided, comprising at least one deionized water supply device, a citric acid supply device, a flow regulating valve, a mixing tank, a flow regulating device and a wafer. Spin rinse dry (SRD) device. The deionized water supply device has a first pipeline, and the citric acid supply has a second pipeline, and the flow regulating valve is located on the second pipeline for regulating the citric acid solution from the citric acid supply device. The citric acid flow rate is used to control the concentration of the mixed citric acid solution. The mixing tank is connected to the first pipeline and the second pipeline, receives and mixes the deionized water and the citric acid solution into a mixed citric acid solution, and has a third pipeline connected to the SRD device to mix the citric acid The cleaning step of transferring the solution to the SRD device, rotating, cleaning and drying the wafer. The flow regulating device is located on the third line for controlling the mixing flow of one of the mixed citric acid solutions delivered to the SRD unit. Another aspect of the present invention is a method for post-electrochemical plating cleaning, comprising at least: providing a deionized water, providing a citric acid solution, adjusting a citric acid solution, and mixing the deionized water with the lemon. The acid solution is used to form a mixed citric acid solution, adjust the mixing flow rate of the mixed citric acid solution, and spin the wafer. Therefore, after the electrochemical plating cleaning device of the present invention, by pre-regulating the citric acid concentration and the mixed flow rate in the clean solution, the ionic impurities on the surface of the wafer can be effectively removed when the SRD device is subjected to the spinning step of 12,127,764. On the eve of the eve, the M circle produces a destructive rot. [Embodiment] The problem of the known technology 'The present invention provides a post-electrochemical electroplating cleaning device' using a solution containing citric acid, so that the negatively charged particles on the surface of the wafer can be changed by the acid value, and the crystal The round strip has the same positive charge, thereby forming an electrostatic double layer repulsed (EDR) to achieve a clean effect. In addition, citric acid acts as a chelating agent to remove positively charged steel ions and copper oxide from the wafer surface. The cleaning device of the present invention is mainly used for the electrochemical cleaning process, and the cleaning step before the next process is performed, and the concentration and flow rate of the mixed citric acid solution are controlled in a premixed manner to achieve a better cleaning effect. Referring to Figure 1, there is shown a schematic structural view of a post electrochemical plating cleaning apparatus in accordance with a preferred embodiment of the present invention. The apparatus of the present invention comprises a deionized water supply unit 1, a citric acid supply unit 1, a first-rate regulator valve 106, a mixing tank 108'-flow regulating device 11A, and an S:RD device 112. Wherein the 'deionized water supply device 102 has a first line 114a, the citric acid supply unit 104 has a second line U4b, and the flow regulating valve 1〇6 is located on the second line 114b, for example, a needle valve, To adjust the flow rate of citric acid from the citric acid solution of the citric acid supply device 104, the mixing tank 1〇8 is connected to the first line 114a and the second line 114b, and receives and mixes the deionized water and the citric acid solution into a Mixing the citric acid solution, and having a third line U4c connected to the SRD m, and sending the mixed rod-like acid solution to the 8 1277664 to the SRD device 112 to perform a cleaning step of rotating the wafer (not shown). The concentration of the mixed citric acid solution is controlled by adjusting the flow rate of the citric acid. * The flow regulating device 110 is located on the third line 114c for controlling the mixed flow rate of the mixed citric acid solution delivered to the SRD unit 112. Therefore, the cleaned cleaning solution is pre-mixed before entering the SRD unit 112 to reach a predetermined concentration and flow rate. Referring also to FIG. 1 , in a preferred embodiment of the present invention, the cleaning device further includes: a manual valve 120 disposed on the second conduit 114b between the citric acid supply device 104 and the flow regulating valve 106 for The front section of the second line 114b provides a manual control mode for controlling the transfer of the citric acid solution on the second line 114b, and a first gas valve 122a is located on the first line 114a for controlling the transfer of deionized water. The second air valve 122b is located on the second line 114b, and the flow regulating valve 106 and the manual valve 120 are controlled to operate simultaneously with the first air valve 122a. A pressure switch 124 is connected to the first air gap 122a and the second air valve 122b, and has a signal transmission device 126 connected to the citric acid supply device 104. When the first air valve 122a is opened, the second air valve 122b is simultaneously When it is turned on, the pressure switch 124 is triggered by the air pressure at the time of opening, and sends a request signal to the citric acid supply device 104 to cause the citric acid supply device 104 to provide the citric acid solution. A check valve 128 is located between the second gas valve 122b and the flow regulating valve 106 for preventing backflow of the supplied citric acid solution, a flow sensor 130, located after the flow regulating valve 106, detecting the citric acid solution Is the flow correct? The mixing tank 108 further includes a liquid level sensor 13 2, and when the liquid level reaches 1274664 to a set high liquid level value, the liquid level sensor 132 sends a request signal to close the first gas valve 122a to block Transfer of deionized water and citric acid solution. Referring to Figure 2, there is shown a schematic structural view of a post electrochemical plating cleaning apparatus in accordance with another preferred embodiment of the present invention. According to a preferred embodiment of the first embodiment, in another preferred embodiment of the present invention, the cleaning device further comprises: a transfer valve 234 located on the third line 214c for controlling the mixed citric acid solution from the mixing tank 208 - . The spring one supply tank 236 is located on the third line 214c, receives and temporarily stores the mixed citric acid solution passing through the transfer valve 234, and has a transport sensor 238 and a low level sensor 240, which are provided in the supply tank 236. The liquid level is lower than a delivery liquid level value, the delivery sensor 238 sends a signal to open the delivery valve 234, and the mixed citric acid solution is sent from the mixing tank 208 to the supply tank 236, and the low liquid level sensor 240 is used. When the liquid level in the supply tank 236 is lower than a low liquid level value, a signal indicates that the clean device is in an abnormal state, wherein the low liquid level value is smaller than the transfer liquid level value. The feed valve 242 is located on the third line 214c and is supplied to the tank 236 for controlling the mixed citric acid solution from the supply tank 236. The flow regulating device 210 is further connected to a flow meter 242 for detecting the flow state of the mixed citric acid solution to ensure correct flow. The SRD device 212 further includes a valve 244 for controlling the transfer of the mixed citric acid solution. Referring also to Fig. 2, a clean process for applying electro-positive electroplated wafers using the present invention will be described by way of an example. First, when the first gas valve 222a is opened, the deionized water supply device 202 provides deionized water in the first line 214a, and the pressure switch 224 is triggered by the open air pressure, and sends a signal to the citric acid supply 1277664 device 204, so that The citric acid supply device 204 provides a citric acid solution in a second line 214b, such as an ElectraClean solution developed by Applied Materials. The second gas valve 222b is controllably connected to the first gas valve 222a and thus simultaneously opened to transfer the citric acid solution. The deionized water flows to the mixing tank 208 via the first line 214a, and the citric acid solution flows through the second line 214b through a check valve 228, a flow regulating valve 206 and a flow sensor 230. The check valve 228 prevents the citric acid solution from flowing backward, and adjusts the flow rate of the citric acid solution by using the flow regulating valve 206, thereby controlling the concentration of the mixed citric acid solution required for a better cleaning effect, and the concentration is about 0.1% to 10 %, preferably from 0.36% to 1.2%. Flow sensor 230 can be used to detect if the flow of the supplied citric acid solution is correct. The mixing tank 208 receives the deionized water and the citric acid solution to provide a mixed environment, and outputs the mixed citric acid solution produced after mixing from the third line 214c, and utilizes the liquid level sensor 232 in the mixing tank 208, according to The liquid level condition in the mixing tank 208 determines whether to continue the mixing operation. When the liquid level reaches a predetermined high liquid level value, the liquid level sensor 232 sends a request signal to close the first gas valve 222a to prevent deionized water. The second gas valve 222b is also closed to prevent the transfer of the citric acid solution. The pressure switch 224 stops sending the request signal to the citric acid supply device 204 due to the closing of the first gas valve 222a. Therefore the supply of the citric acid solution is stopped The mixed citric acid solution is fed from the mixing tank 208 through a transfer valve 234 to a supply tank 236 to temporarily store the mixed citric acid solution. Using the delivery sensor 238 in the supply tank 236, it is determined whether the transfer valve 234 needs to be opened according to the liquid level condition in the supply tank 236, so that the mixed citric acid solution flows into the supply tank 236 when the liquid level of 11 1277664 is lower than a predetermined one. To convey the level value, the delivery sensor 238 sends a signal to cause the delivery valve 234 to open, allowing the mixed citric acid solution to flow into the supply tank 236. And using a low level sensor 240 to determine whether the entire cleaning device is in an abnormal state, when the liquid level in the supply tank 236 is lower than a set low liquid level value, the low liquid level sensor 240 sends a signal indicating The clean device is in an abnormal state, wherein the low liquid level value is less than the transport liquid level value. When the mixed citric acid solution is output from the supply tank 236, flows through a supply valve 242, and then flows through a flow regulating device 210, a flow meter 244, and a valve® 246, and finally enters the SRD device 212 to perform spin cleaning and dry cleaning. step. The flow rate adjusting means 210 is used to adjust the mixing flow rate of the desired mixed citric acid solution at a flow rate of about 100 ml/min to 2000 ml/min, preferably about 450 ml/min to 1300 ml/min. The flow meter 244 is used to detect the flow state of the mixed citric acid solution to ensure proper flow. The valve 246 is used to control the mixed citric acid solution prior to entering the SRD unit 212. The time for washing with the mixed citric acid solution is preferably from about 5 seconds to 5 minutes, more preferably from about 10 seconds to 40 seconds. Another aspect of the invention is a method of post-electrochemical plating clean. Referring to Figure 3, there is shown a flow chart of a method of electrochemically plating a clean wafer in accordance with the present invention. In step 302, a deionized water is provided, the flow rate of which is a predetermined value. In step 304, a citric acid solution is provided. In step 306, the flow of citric acid in the citric acid solution is adjusted. In step 308, deionized water and citric acid solution are mixed to form a mixed citric acid solution. In step 310, the mixed flow rate of the mixed citric acid solution is adjusted. In step 312, the wafer is rotated and cleaned. Wherein, the concentration of the mixed citric acid solution is determined by adjusting the flow rate of the citric acid solution, and the concentration is about 〇% to 10%, preferably 0.36% to 12,128,764. The flow rate of the 5 citric acid solution is about 100 ml/min to 2 嶋 pen clock, preferably about 450 ml/min to _ml/min. The cleaning time of the mixed citric acid solution is preferably from about 5 seconds to 5 minutes, more preferably from about 1 sec to 4 sec. It will be apparent from the above-described preferred embodiments of the present invention that the application of the present invention has the following points: By using the electrochemical plating cleaning device and the method of the present invention, the citric acid concentration and the second aliquot in the clean solution are pre-regulated before the wafer is cleaned, which not only effectively removes the charged impurities on the surface of the wafer, but also reduces the Destructive etching occurs on the surface of the wafer for better cleaning. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A schematic diagram of a post-electrochemical plating clean mounting of the embodiment. Figure 2 is a schematic view showing the structure of a post-electrochemical electroplating cleaning apparatus according to another preferred embodiment of the present invention. Fig. 3 is a view showing a method of electrochemically plating a clean wafer according to the present invention (Journey chart. 13 1277664 [Signature of main components] 102: Deionized water supply device 106: Flow regulating valve 110: Flow regulating device 114a: A line 114c: a third line 122a: a first gas valve 124: a pressure switch 128: a check valve 132: a liquid level sensor 202: a deionized water supply device 206: a flow regulating valve 210: a flow regulating device 214a: First line 214c: third line 222a: first valve 224: pressure switch 228: check valve 232: level sensor 236: supply tank 240: low level sensor 244: flow meter 104: The citric acid supply device 108: the mixing tank 112: the SRD device 114b: the second line 120: the manual valve 122b: the second gas valve 126: the signal transmission device 130: the flow sensor 204: the citric acid supply device 208: mixing Slot 212: SRD device 214b: second line 220: manual valve 222b: second air valve 226: signal transmission device 230: flow sensor 234 : Transfer valve 238 : Transport sensor 242 : Supply valve 246 : Valve 14