1272190 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種流體喷射裝置及其製造方法，且 特別是有關於一種微流體喷射裝置及其製造方法。 【先前技術】 微流體喷射裝置近來已廣泛地運用於資訊產業，例如 喷墨印表機或類似設備中。隨著微系統工程(micro system engineering)的逐步開發，此種流體喷射裝置逐漸有其他眾 | 多領域之應用，例如燃料喷射系統(fuel injection system)、 細胞篩選（cell sorting)、藥物釋放系統（drug delivery system)、噴印光刻技術(print lithography)及微喷射推進系 統(micro jet propuision system)等。 第1圖揭示一種習知的流體噴射裝置1〇〇,請參照第1 圖’在基底102中形成令流體腔1 〇4和流體通道1 〇6，而 在基底102上則形成一.電鍍起始層1〇8,且電鍍起始層ι〇8 ，上形成一結構層110，然而，在此結構中，.在喷孔112和 '流體腔104中仍會有一部分電鍍起始層108裸露而接觸到 所填充的墨水，其會導致電鍍起始層1〇8被墨水侵蝕而使 墨水變質或是電鍍起始層108剝落。 【發明内容】 根據上述問題，本發明之目的為提供一種流體喷射裝 置及其製造方法’克服電鍍起始層和結構層被墨水侵钱所 產生之相關問題，以獲得穩定度較高及壽命較長之喷墨裝 置。1272190 IX. Description of the Invention: [Technical Field] The present invention relates to a fluid ejection device and a method of fabricating the same, and more particularly to a microfluid ejection device and a method of fabricating the same. [Prior Art] Microfluid ejection devices have recently been widely used in the information industry, such as ink jet printers or the like. With the gradual development of micro system engineering, such fluid ejection devices are increasingly being used in other fields, such as fuel injection systems, cell sorting, drug delivery systems ( Drug delivery system), print lithography, and micro jet propuision system. Fig. 1 discloses a conventional fluid ejecting apparatus 1A. Referring to Fig. 1 ', a fluid chamber 1 〇 4 and a fluid passage 1 〇 6 are formed in a substrate 102, and a plating is formed on the substrate 102. The initial layer 1 〇 8 and the plating initiation layer ι 8 have a structural layer 110 formed thereon. However, in this structure, a portion of the plating initiation layer 108 is still exposed in the nozzle hole 112 and the 'fluid cavity 104. Contact with the filled ink may cause the plating initiation layer 1〇8 to be eroded by the ink to deteriorate the ink or to peel off the plating initiation layer 108. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a fluid ejection device and a method of manufacturing the same that overcomes the problems associated with the intrusion of the initial layer of the plating and the structural layer by the ink to obtain higher stability and longer life. Long inkjet device.
0535-A21421 TWF(N2)；A05614；WAYNE 5 1272190 因此，根據上述目的，本發明提供一種流體喷射裝置 之製造方法。首先，形成一圖案化之犧牲層於基底上，形 成一電鍍起始層，至少包覆圖案化之犧牲層。其後，形成 一結構層於電鍍起始層和基底上，圖形化結構層，以形成 一喷孔。接著，移除喷孔内之電鍍起始層，移除犧牲層， 以形成一流體腔。後續，形成一結構保護層選擇性包覆結 構層及電鍍起始層。 本發明提供一種流體喷射裝置之製造方法。首先，形 成一圖案化之犧牲層於基底上，形成一電鍍起始層，至少 包覆圖案化之犧牲層，其中電鐘起始層係為鈦銅複合層。 其後，形成一結構層於電鍍起始層和基底上，圖形化結構 層，以形成一喷孔。接下來，移除喷孔内之電鍍起始層， 圖形化基底背部晶面，以形成一流體通道暴露犧牲層。後 續，移除犧牲層，以形成一流體腔，無電鍍一結構保護層 包覆結構層及電鍍起始層，並填入兩者間之界面，其中結 構保護層包括一鎳金屬層直接接觸結構層和電鍍起始層， 及一金金屬層位於錄金屬層上。 本發明提供一種流體喷射裝置，包括一位於基底上之 結構層以形成一流體腔，其中結構層包括一喷孔，一位於 流體腔之内壁上之電鍍起始層和一具有抗化性之結構保 護層，包覆電鍍起始層、結構層及兩者之界面。 【實施方式】 以下將以實施例詳細說明做為本發明之參考，且範例 係伴隨著圖式說明之。在圖式或描述中，相似或相同之部 0535-A21421TWF(N2)；A05614；WAYNE 6 1272190 / 分係使用相同之圖號。在圖式中，實施例之形狀或是厚度 . 可擴大，以簡化或是方便標示。圖式中各元件之部分將以 分別描述說明之，值得注意的是，圖中未繪示或描述之元 件可以具有各輕熟習此技藝之人士所知的形式。此外， Μ敘述一層係位於一基板或是另一層上時，此層可直接位 於基板或是另一層上，或是其間亦可以有中介層。 第2Α圖〜第2F圖係揭示本發明一實施例流體喷射裝 鲁 罝之製程剖面示意圖，首先，請參照第2Α圖，提供一基 • 底2〇〇 ’基底200包括石夕、玻璃，和/或其它材料所组成， 較佳者’基底200係為一石夕基底，其後，於基底2〇〇上形 成一例如多晶矽或金屬組成之控制閘極202，接著，形成 例如氧化矽、氮化矽或氮氧化矽所組成之第一介電層 204 5覆蓋控制閘極202和部分基底200。後續，形成例如 鋁或銅之第一導電層206於閘極介電層204和部分基底 200上’其中’位於控制閘極2Q2兩侧之第一導電層2〇6 φ 了刀別供作源極207和没極209，而控制閘極202及其相 關電路係為本實施例流體喷射裝置之流體控制元件213。 斤接著，形成一例如氡化矽、氮化矽或氮氧化矽所組成 之第二介電層208於部分第一導電層2〇6、第一介電層 和基底200上，需注意的是，第二介電層2〇8暴露部分第 一導電層206和部分之汲極207，以做為插塞，後綠 形成一電阻層2丨6覆蓋部份第一導電層2〇6和部分^極 207上，接著，形成一例如鋁或銅之第二導電層218於泰 阻層216上，其中第二導電層218和電p且層216緊密連結二 0535-A21421 TWF(N2) ；A05614；WAYNE， 1272190 ::…職微綱製程圖形化第二導電層2i8和電阻 二：16,接著’圖案化加熱元件區之第二導電層218，使部 =电阻層216裸露，如此，電阻層216和其下之第一導電 曰206構成-加熱元件215。其後，形成_例如包括沉 和_之鈍化層220於第二導電層218和電阻層2i6上， 亚形成-例如Ta所組成之金屬保護層222於加熱元件215 ，電阻層216上，後續，圖案化鈍化層22〇以形成接觸塾 2丄7。 接下來’經由例如沉積或㈣，並進行微影定義步驟， 形成一圖形化之犧牲層224於基底之第一面2〇1上，在本 實施例中第一面201即為與流體控制元件213之同一面广 ，牲層224可以為例如氧化物之介電層或是例如光阻和/ 或聚合物之高分子層所組成，犧牲層224之厚度可介於 2μπι〜ΙΟΟμηι。 一後繽，請芩照第2Β圖，以例如物理氣相沉積法(pvD) 之泰鍍法或濺鍍法，形成電鍍起始層226於鈍化層和 犧牲層224▲上，電鍍起始層226需和其下之犧牲 良好之附著性，較佳者，電鍍起始層226可包括鈦金屬声 和位於鈦金屬層上之銅金屬層，鈦金屬係用於增進金^ 晶片表面之附著力，厚度較佳為小於· Q埃，銅 雨、 以當電鍍起始作用，厚度可約為2〇〇〇埃〜8〇〇〇埃。此外， 電鐘起始層226亦可包括鈦金屬層和位於鈦金上# 金屬層。 . 与上之鎳 接下來，請參照第2C圖，以旋轉塗佈法及後續的微影 0535-A21421 TWF(N2)；A05614；WAYNE 8 1272190 製程’形成-ffi案化之_層22δ，圖案化之光阻層⑽ 覆蓋電鍍起始層226上之預定形成噴孔之位置，及預定形 成結構層以外之區域。 接著，以一電鍍方法，形成-例如鎳之結構層230於 電鍍起始層226上，由於電鍍起始層226被前述光阻層 覆蓋之部狄電鍍液中不會產生反應，因此，在電鍛之製 各中，結4層2』會形成在電鍍起始層226未被光阻層⑽0535-A21421 TWF(N2); A05614; WAYNE 5 1272190 Accordingly, in accordance with the above object, the present invention provides a method of manufacturing a fluid ejection device. First, a patterned sacrificial layer is formed on the substrate to form an electroplated starting layer covering at least the patterned sacrificial layer. Thereafter, a structural layer is formed on the plating starting layer and the substrate, and the structural layer is patterned to form an orifice. Next, the plating initiation layer in the orifice is removed and the sacrificial layer is removed to form a fluid chamber. Subsequently, a structural protective layer selective cladding layer and an electroplating starting layer are formed. The present invention provides a method of manufacturing a fluid ejection device. First, a patterned sacrificial layer is formed on the substrate to form an electroplating starting layer, at least coated with a patterned sacrificial layer, wherein the initial layer of the electric clock is a titanium-copper composite layer. Thereafter, a structural layer is formed on the plating starting layer and the substrate, and the structural layer is patterned to form an orifice. Next, the plating initiation layer in the orifice is removed and the back surface of the substrate is patterned to form a fluid channel to expose the sacrificial layer. Subsequently, the sacrificial layer is removed to form a fluid cavity, an electroless plating-protective layer covering the structural layer and the plating starting layer, and filling the interface between the two, wherein the structural protective layer comprises a nickel metal layer directly contacting the structural layer And an electroplating starting layer, and a gold metal layer on the metal layer. The invention provides a fluid ejection device comprising a structural layer on a substrate to form a fluid cavity, wherein the structural layer comprises an orifice, an electroplating starting layer on the inner wall of the fluid chamber and a structural protection with chemical resistance The layer covers the plating initiation layer, the structural layer, and the interface between the two. [Embodiment] The following is a detailed description of the embodiments, and the examples are illustrated with the accompanying drawings. In the drawings or descriptions, similar or identical parts 0535-A21421TWF(N2); A05614; WAYNE 6 1272190/sub-system use the same figure number. In the drawings, the shape or thickness of the embodiment can be expanded to simplify or facilitate the marking. Portions of the various elements in the drawings will be described separately, and it is noted that elements not shown or described in the drawings may be in a form known to those skilled in the art. In addition, when a layer is placed on a substrate or another layer, the layer may be directly on the substrate or another layer, or may have an interposer therebetween. 2D to 2F are schematic cross-sectional views showing a process of a fluid ejection device according to an embodiment of the present invention. First, please refer to FIG. 2 to provide a base 2 substrate 200 including a stone eve, a glass, and And / or other materials, preferably the substrate 200 is a stone substrate, after which a control gate 202 composed of, for example, polysilicon or metal is formed on the substrate 2, and then, for example, yttrium oxide and nitridation are formed. A first dielectric layer 204 5 composed of tantalum or niobium oxynitride covers the control gate 202 and a portion of the substrate 200. Subsequently, a first conductive layer 206 such as aluminum or copper is formed on the gate dielectric layer 204 and a portion of the substrate 200. The first conductive layer 2〇6 φ on the sides of the control gate 2Q2 is provided as a source. The pole 207 and the poleless 209, and the control gate 202 and its associated circuitry are the fluid control elements 213 of the fluid ejection device of the present embodiment. Then, a second dielectric layer 208 composed of, for example, antimony telluride, tantalum nitride or hafnium oxynitride is formed on part of the first conductive layer 2〇6, the first dielectric layer and the substrate 200, and it is noted that The second dielectric layer 2〇8 exposes a portion of the first conductive layer 206 and a portion of the drain 207 as a plug, and the green layer forms a resistive layer 2丨6 covering a portion of the first conductive layer 2〇6 and a portion On the pole 207, a second conductive layer 218, such as aluminum or copper, is formed on the Thai resist layer 216, wherein the second conductive layer 218 and the electrical p and the layer 216 are closely bonded to the two 0535-A21421 TWF (N2); A05614 ;WAYNE, 1272190:...the micro-process process patterning the second conductive layer 2i8 and the resistor two:16, then 'patterning the second conductive layer 218 of the heating element region, causing the portion=resistive layer 216 to be exposed, thus, the resistive layer The 216 and the first conductive crucible 206 below it constitute a heating element 215. Thereafter, a passivation layer 220 including, for example, sink and _ is formed on the second conductive layer 218 and the resistive layer 2i6, and a metal protective layer 222 composed of, for example, Ta is formed on the heating element 215, the resistive layer 216, and subsequently, The passivation layer 22 is patterned to form a contact 塾2丄7. Next, a patterned sacrificial layer 224 is formed on the first side 2〇1 of the substrate via, for example, deposition or (4), and a lithography defining step. In this embodiment, the first side 201 is a fluid control element. The 213 has a wide area, and the layer 224 can be composed of a dielectric layer such as an oxide or a polymer layer such as a photoresist and/or a polymer. The thickness of the sacrificial layer 224 can be between 2 μm and ΙΟΟμηι. Afterwards, please refer to the second drawing, for example, by physical vapor deposition (pvD), or by sputtering, forming an electroplating starting layer 226 on the passivation layer and the sacrificial layer 224 ▲, and plating the initial layer. 226 is required to adhere well to the underlying sacrifice. Preferably, the plating initiation layer 226 may include a titanium metal sound and a copper metal layer on the titanium metal layer, and the titanium metal is used to improve the adhesion of the gold wafer surface. The thickness is preferably less than · Q angstroms, copper rain, as the initial effect of electroplating, the thickness may be about 2 〇〇〇 -8 Å. In addition, the electric clock starting layer 226 may also include a titanium metal layer and a metal layer on the titanium. With the nickel on top, please refer to the 2C figure, with the spin coating method and the subsequent lithography 0535-A21421 TWF (N2); A05614; WAYNE 8 1272190 process 'form-ffi case _ layer 22δ, pattern The photoresist layer (10) covers a predetermined position on the plating start layer 226 where the orifice is formed, and is intended to form a region other than the structural layer. Then, an electroplating method, for example, a structure layer 230 of nickel is formed on the electroplating starting layer 226, since the electroplating starting layer 226 is not covered by the electroplating solution covered by the photoresist layer, therefore, electricity is generated. In the forging process, the junction 4 layer 2 』 will be formed in the plating initiation layer 226 without the photoresist layer (10)
覆蓋之部分，其中結構層23Q之厚度可介於5叫〜轉m。 後續，請參照f 2D圖，以顯影、去除劑㈣p㈣或電漿灰 化移除上述光阻層228 ’而在移除上述光阻層228之後， 可於結構層⑽中形成-噴孔232，接著，可以一钱刻方 広，移除賀孔232中的電鍍起始層226。在此需注意的是， 雖然本發明揭示上述移除光阻層228以形成噴孔232的方 去’但本發明不限於此’本發明亦可先形成結構層23〇， 再進行-微縣刻步驟圖形化結構層23G，以定義出喷孔 232。在本發明之一較佳實施例中，結構層之厚度大體上介 於ΙΟμιη〜ΙΟΟμπι之間。 接者，請麥照第2Ε圖，進行一例如微影蝕刻方法，或 喷沙法，圖形化基底之第二面2〇3，以形成一流體通道 234 ’恭露出犧牲層224，之後，經由流體通道234，以一 蝕刻方法，移除犧牲層224，以形成連通流體通道234之 流體腔236。當犧牲層224是高分子所組成時，矸以電漿 灰化方法或是以去除劑（stripper)移除高分子所組成之犧牲 層224。本發明不限於此，亦即，形成流體通道234的步 0535-A21421 TWF(N2)；A0.5614；WAYNE 9 1272190 ； 驟順序可交換，例如，可先經由喷孔232移除犧牲層224， 之後，再於基底之第二面203形成流體通道234。 接下來，請參照第2F圖，進行一無電鍍製程，形成一 例如3000埃〜8000埃之結構保護層238，選擇性的包覆結 構層230、裸露出之電鐘起始層226和/或兩者之界面240， 需注意的是，結構保護層238需對於結構層230及電鍍起 始層226具有良好的附著性。形成結構保護層238之製程 可包括下列步驟··首先，以無電鍍方法鍍上一層鎳金屬層 > 於結構層230和裸露之電鍍起始層226上，後續，以無電 鍵方法鐘上一層金金屬層於鎳金屬層上，結構保護層238 之錄金屬層和結構層230有良好之附著性，而金金屬層則 有良好之抗化性。 因此，根據本發明之上述實施例，結構層230、電鍍 起始層226和/或兩者之界面240均包覆以具有良好抗化性 _ 之結構保護層238，使得流體腔236和流體通道234中之 _ 結構在長時間墨水接觸下亦不會遭受侵蝕，而獲得穩定度 較高及壽命較長之噴墨裝置。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定著為準。 0535-A21421TWF(N2)；A05614；WAYNE 10 1272190 【圖式簡單說明】 第1圖揭示一種習知的流體喷射裝置。 第2A圖〜第2F圖揭示本發明一實施例流體喷射裝置 之製造方法。 【主要元件符號說明】 100〜流體喷射裝置；102〜基底； 104〜流體腔； 106〜流體通道； 108〜電鍍起始層； 110〜結構層； 112〜喷孔； 200〜基底； 201〜第一面； 202〜控制閘極； 204〜閘極介電層； 206〜第一導電層； 207〜源極； 209〜汲極； 213〜流體控制元件 ;215〜加熱元件； 217〜接觸墊； 216〜電阻層； 218〜第二導電層； 220〜鈍化層； 222〜金屬保護層； 224〜犧牲層； 226〜電鍍起始層； 228〜光阻層； 230〜結構層； 232〜喷孔； 234〜流體通道； 236〜流體腔； 23 8〜結構保護層， 240〜結構層和電鑛起始層界面。 0535-A21421TWF(N2)；A05614；WAYNE 11The portion covered, wherein the thickness of the structural layer 23Q can be between 5 and 4 m. Subsequently, please refer to the f 2D diagram to remove the photoresist layer 228 ′ by development, remover (4) p (four) or plasma ashing. After removing the photoresist layer 228, a via hole 232 may be formed in the structural layer (10). Then, the plating initiation layer 226 in the hole 232 can be removed. It should be noted that although the present invention discloses the above-mentioned removal of the photoresist layer 228 to form the nozzle hole 232, the present invention is not limited thereto. The present invention may also form the structural layer 23〇 first, and then proceed to -micro county. The engraving step graphically constructs the structural layer 23G to define the orifices 232. In a preferred embodiment of the invention, the thickness of the structural layer is substantially between ΙΟμηη~ΙΟΟμπι. Next, please take a photo, or a sandblasting method, to pattern the second side 2〇3 of the substrate to form a fluid channel 234' to reveal the sacrificial layer 224, and then pass through The fluid channel 234 removes the sacrificial layer 224 in an etched manner to form a fluid chamber 236 that communicates with the fluid channel 234. When the sacrificial layer 224 is composed of a polymer, the sacrificial layer 224 composed of the polymer is removed by a plasma ashing method or a stripper. The invention is not limited thereto, that is, step 0535-A21421 TWF (N2); A0.5614; WAYNE 9 1272190 forming the fluid passage 234; the sequence can be exchanged, for example, the sacrificial layer 224 can be removed first through the orifice 232, Thereafter, a fluid channel 234 is formed on the second side 203 of the substrate. Next, referring to FIG. 2F, an electroless plating process is performed to form a structural protective layer 238, such as 3000 Å to 8000 Å, a selective cladding structure layer 230, an exposed electric clock starting layer 226, and/or At the interface 240 of both, it should be noted that the structural protective layer 238 needs to have good adhesion to the structural layer 230 and the plating starting layer 226. The process of forming the structural protective layer 238 may include the following steps: First, a layer of nickel metal is plated by electroless plating > on the structural layer 230 and the exposed plating initiation layer 226, and subsequently, a layer is formed by a non-electrical key method. The gold metal layer is on the nickel metal layer, the metal layer of the structural protective layer 238 and the structural layer 230 have good adhesion, and the gold metal layer has good chemical resistance. Thus, in accordance with the above-described embodiments of the present invention, the structural layer 230, the plating initiation layer 226, and/or the interface 240 of both are coated with a structural protective layer 238 having good chemical resistance, such that the fluid chamber 236 and the fluid channel The structure of 234 is not eroded under long-term ink contact, and an ink jet device with higher stability and long life is obtained. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. 0535-A21421TWF(N2); A05614; WAYNE 10 1272190 [Schematic Description of the Drawing] Fig. 1 discloses a conventional fluid ejection device. 2A to 2F are views showing a method of manufacturing a fluid ejecting apparatus according to an embodiment of the present invention. [Main component symbol description] 100~ fluid ejection device; 102~ substrate; 104~ fluid cavity; 106~ fluid channel; 108~ plating initiation layer; 110~ structural layer; 112~ orifice; 200~ substrate; One side; 202~control gate; 204~gate dielectric layer; 206~first conductive layer; 207~source; 209~dip; 213~fluid control element; 215~heating element; 217~contact pad; 216~resistive layer; 218~second conductive layer; 220~passivation layer; 222~metal protective layer; 224~sacrificial layer; 226~electroplating starting layer; 228~photoresist layer; 230~structural layer; ; 234 ~ fluid channel; 236 ~ fluid cavity; 23 8 ~ structural protective layer, 240 ~ structural layer and electrical ore starting layer interface. 0535-A21421TWF(N2);A05614;WAYNE 11