TWI272149B - Laser scanning apparatus and methods for thermal processing - Google Patents
Laser scanning apparatus and methods for thermal processing Download PDFInfo
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- TWI272149B TWI272149B TW094101534A TW94101534A TWI272149B TW I272149 B TWI272149 B TW I272149B TW 094101534 A TW094101534 A TW 094101534A TW 94101534 A TW94101534 A TW 94101534A TW I272149 B TWI272149 B TW I272149B
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000012545 processing Methods 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 263
- 230000005855 radiation Effects 0.000 claims abstract description 118
- 230000003287 optical effect Effects 0.000 claims abstract description 111
- 238000002310 reflectometry Methods 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims 3
- 238000012197 amplification kit Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 14
- 239000013078 crystal Substances 0.000 description 32
- 238000010438 heat treatment Methods 0.000 description 27
- 238000010586 diagram Methods 0.000 description 21
- 238000012544 monitoring process Methods 0.000 description 17
- 238000010408 sweeping Methods 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 17
- 238000004458 analytical method Methods 0.000 description 14
- 238000009826 distribution Methods 0.000 description 13
- 230000010287 polarization Effects 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000004575 stone Substances 0.000 description 8
- 244000007853 Sarothamnus scoparius Species 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000002835 absorbance Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 241000282326 Felis catus Species 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000036760 body temperature Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 210000003813 thumb Anatomy 0.000 description 2
- 244000046038 Ehretia acuminata Species 0.000 description 1
- 235000009300 Ehretia acuminata Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/787,664 US7154066B2 (en) | 2002-11-06 | 2004-02-26 | Laser scanning apparatus and methods for thermal processing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200528223A TW200528223A (en) | 2005-09-01 |
| TWI272149B true TWI272149B (en) | 2007-02-01 |
Family
ID=35025552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094101534A TWI272149B (en) | 2004-02-26 | 2005-01-19 | Laser scanning apparatus and methods for thermal processing |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4001602B2 (ja) |
| KR (1) | KR100722723B1 (ja) |
| TW (1) | TWI272149B (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI503873B (zh) * | 2011-11-04 | 2015-10-11 | Applied Materials Inc | 使用微透鏡陣列而產生線路之光學設計 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5105903B2 (ja) * | 2007-02-28 | 2012-12-26 | 住友重機械工業株式会社 | レーザアニール装置及びアニール方法 |
| US20090114630A1 (en) * | 2007-11-05 | 2009-05-07 | Hawryluk Andrew M | Minimization of surface reflectivity variations |
| US20090181553A1 (en) | 2008-01-11 | 2009-07-16 | Blake Koelmel | Apparatus and method of aligning and positioning a cold substrate on a hot surface |
| US20090278287A1 (en) * | 2008-05-12 | 2009-11-12 | Yun Wang | Substrate processing with reduced warpage and/or controlled strain |
| EP2210696A1 (en) * | 2009-01-26 | 2010-07-28 | Excico France | Method and apparatus for irradiating a semiconductor material surface by laser energy |
| US7947968B1 (en) | 2009-01-29 | 2011-05-24 | Ultratech, Inc. | Processing substrates using direct and recycled radiation |
| JP2011003630A (ja) * | 2009-06-17 | 2011-01-06 | Sumitomo Heavy Ind Ltd | レーザ照射装置、及びレーザ照射方法 |
| KR20140062427A (ko) * | 2011-09-15 | 2014-05-23 | 니폰 덴키 가라스 가부시키가이샤 | 유리판 절단 방법 |
| JP2013120936A (ja) * | 2011-12-07 | 2013-06-17 | Ultratech Inc | パターン効果を低減したＧａＮＬＥＤのレーザーアニール |
| US8546805B2 (en) * | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
| JP5902529B2 (ja) * | 2012-03-28 | 2016-04-13 | 株式会社ディスコ | レーザ加工方法 |
| CN105448681B (zh) * | 2014-07-04 | 2018-11-09 | 上海微电子装备（集团）股份有限公司 | 激光退火装置 |
| US10083843B2 (en) * | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
| US10665504B2 (en) * | 2017-07-28 | 2020-05-26 | Veeco Instruments Inc. | Laser-based systems and methods for melt-processing of metal layers in semiconductor manufacturing |
| KR102384289B1 (ko) * | 2017-10-17 | 2022-04-08 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
| CN110047781B (zh) * | 2019-03-14 | 2021-08-24 | 云谷（固安）科技有限公司 | 激光退火设备及激光退火方法 |
| WO2023203733A1 (ja) * | 2022-04-21 | 2023-10-26 | Ｊｓｗアクティナシステム株式会社 | レーザ照射装置、レーザ照射方法、及び半導体デバイスの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3562389B2 (ja) | 1999-06-25 | 2004-09-08 | 三菱電機株式会社 | レーザ熱処理装置 |
| US6366308B1 (en) * | 2000-02-16 | 2002-04-02 | Ultratech Stepper, Inc. | Laser thermal processing apparatus and method |
| JP2002141301A (ja) | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用光学系とこれを用いたレーザアニーリング装置 |
| JP2002141302A (ja) | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置 |
| JP2002139697A (ja) | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | 複数レーザビームを用いたレーザ光学系とレーザアニーリング装置 |
-
2005
- 2005-01-19 TW TW094101534A patent/TWI272149B/zh not_active IP Right Cessation
- 2005-01-20 JP JP2005013256A patent/JP4001602B2/ja not_active Expired - Fee Related
- 2005-02-23 KR KR1020050014818A patent/KR100722723B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI503873B (zh) * | 2011-11-04 | 2015-10-11 | Applied Materials Inc | 使用微透鏡陣列而產生線路之光學設計 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060043106A (ko) | 2006-05-15 |
| JP2005244191A (ja) | 2005-09-08 |
| JP4001602B2 (ja) | 2007-10-31 |
| TW200528223A (en) | 2005-09-01 |
| KR100722723B1 (ko) | 2007-05-29 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |