TWI272121B - Waste gases treatment apparatus and method - Google Patents

Waste gases treatment apparatus and method Download PDF

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Publication number
TWI272121B
TWI272121B TW92129311A TW92129311A TWI272121B TW I272121 B TWI272121 B TW I272121B TW 92129311 A TW92129311 A TW 92129311A TW 92129311 A TW92129311 A TW 92129311A TW I272121 B TWI272121 B TW I272121B
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Taiwan
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exhaust gas
gas
cooling
heating chamber
treatment device
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TW92129311A
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Chinese (zh)
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TW200514615A (en
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Byung-Il Lee
Sung-Jin Jung
Man-Su Lee
Chang-Wook Jeong
Geun-Sik Lee
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Unisem Co Ltd
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Abstract

A waste gases treatment apparatus is provided with a waste gases pre-treatment apparatus for treating waste gases discharged from semiconductor (or LCD) manufacturing equipment by using a dry-type treatment method to lengthen a life span of the waste gases treatment apparatus, and provided with a humidity eliminating device for eliminating moisture contained in the finally treated gases to prevent an exhaust duct from dewing. In addition, composing a shield unit in a heating chamber for combusting the waste gases prevents an inner part of the heating chamber from corroding by fluorine gases, improving a cooling structure for cooling a lower part of the heating chamber prevents powder clogging, and improving a supply structure of the waste gases supplied to the heating chamber lengthen a staying time of the waste gases in the heating chamber.

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1272121 玖、發明說明 ^ ^ ^ ^ ^ > 【發明所屬之技術領域】 發明領域 本發明係有關於可更有效率地處理由半導體或LCD製 5造過粒中排出之廢氣的廢氣處理裝置與方法。 先前技術之說明 « 在m半導體裝置時,各種製造設備與製造方法是 必要的,且由於在用以製造該半導體裝置之方法中之 籲 10 CVD(化學蒸鍍)、電漿蝕刻、外延蒸鍍、與濺鍍等的製程特 性,在以往是使用各種有毒的、具腐蝕性的且可燃的氣體, 例如 3¾、SiA、SiF4、SiA、DCS(SiH2Cl)、NH3、AsH3 4PH3、B2H6、GeH4、WF6、TEOS、TEB、TEPO、TMB、 TDMAT、NF3、CF4、C2F6、C3F8 〇 15 因此,當在半導體裝置製造方法中使用有毒氣體排放 至空氣中且未經任何淨化過程時,這些有毒氣體將會污染 空氣並對人體與生態系統造成嚴重影響,所以一習知半導鲁 體裝置生產線具有一安裝在一預定位置處的廢氣處理裝 置,使用這廢氣處理裝置,淨化由該半導體裝置製造方法 2〇所產生之有毒氣體到達某參考值以下,再將該等有毒氣體 排出至空氣中。 目前通常有三種常用的廢氣處理方法來達成前述目 的,即,第一種是將主要含有水溶性組成物之廢氣溶解至 水中的濕式法,第二種是在一高溫下使包含在廢氣中之可 6 1272121 燃組祕分解、反誠織㈣的職法,而第三種是以 物理或化學之料聽含在該純_之_祕或水溶性 成份吸收至—吸收劑中的吸收法。但是,考慮到穩定性與 、工濟效皿’真正廣泛使用的廢氣處理I置通常使用該濕式 5法、_燒法與該吸收法之混合型者。特別地,以往係使 用種’、且σ ▲濕式法與该燃燒法之組合(以下稱為燃燒·濕 式法廢氣處理裝置)來進行該等廢氣之有效淨化處理。·' 該燃燒-濕式法廢氣處理裝置可淨化該等廢氣,其方式 是燃燒該包含在進入一燃燒室中之可燃物質並將之氧化: 10利用將水噴麗在該等業經燃燒之廢氣中以分離一在燃燒過 程中產生之如石夕氧化物之粉末,且在同時亦去除該等水溶 !·生成伤。但是,該燃燒-濕式法廢氣處理裝置的問題是粉末 堵塞與腐蝕仍類似於其他種類之廢氣處理裝置一般地存 在。換tncvD室排奴純依制狀進人該廢氣 15處理裝置,包含在該等廢氣中之微細粉末會逐漸黏附在該 燃燒室之内壁、管結構或導管上而產生粉末堵塞,因此需乂 要經常維修該廢氣處理裝置。同時,包含在該 而 如F或F2之腐蝕性氣體會輕易地黏著在該等管結構或導= 之内壁上而使它們腐钱,因此減少該廢氣處理裝置 兩 2〇 本人 且Ί更用 母中。通常,縮短該等廢氣處理裝置之維修週期與使用I 命與半導體或LCD成本直接相關。因此,為了解決這些= 題,便產生了一種安装一濕式預處理裝置之構想,該濕式 預處理裝置具有在該等廢氣進入該廢氣處理裝置之前,在 該廢氣處理裝置之前端處先去除包含在該廢氣中之腐蝕性 1272121 氣體或微細粉末的功能。 使用該濕式預處理裝置之習知廢氣處理裝置係揭露在 美國專利第5,955,037號與5,649,985號,Ό37號專利係有關 種由一半導體裝置製造過程中排之廢氣的廢氣處理系 5統,且揭露一種安裝成可在該等廢氣進入一氧化室之前先 去除包含在談等廢氣中之微細粉末或酸性氣體的濕式預處 理單兀。依此,該濕式預處理單元使用一濕喷灑塔方法, 該方法係將喷出之氣體、氣泡等黏附於該排出氣體以便該 等顆粒凝集而分離與去除該等顆粒。詳而言之,濕喷灑塔 10方法利用一安裳在該濕式預處理單元之上部處之微細顆粒 噴嘴將水以—微細霧化狀態向下噴灑,並且同時使該等廢 氣可料過在«式預處理單元之下部處之進人孔而進入 式預處理早π並向上移動,因此可藉由在製程中使該 艾氣互相接觸來去除微細顆粒或酸性氣體。雖 可降低安裝、保養與管理的成本,修護很容 :觸這方法的缺點是該等水顆粒與廢氣之 t 此減少鱗廢氣之處理效率,因為續等 Μ置產生之廢氣的毒性半導體料裝 該濕式預處理單元安裳成可式預處理單元, 氣務以去除由該半導體製熱單元之前進㈣ 中之水溶性成份、可水解成;之包含在該等廢氣 地,,崎專利揭露—噴灑方法^的至少—者。特別 々次興一細腰管法之組合式濕 1272121 式預處理單元,依此方式,以往細腰管法是一種去除顆粒 之方法’係藉由使該等廢氣所通過之橫截面變窄(細腰管嘴 部)以使流體加速而以高速噴灑清洗水者。進入該細腰管嘴 部之廢氣係藉由一由該噴嘴喷灑出來之水顆粒的高壓来清 5潔,且該噴灑之水顆粒是經過加壓的以便能以一高速通過 該細腰官喉部。此時,由於該等水顆粒與該等廢氣之流體 流動方向相似,故可在該等廢氣與該等水顆粒之間產生〜 有效接觸。藉由這接觸,在該等廢氣中之水溶性成份、可 水解成份與灰塵可透過如水解或溶解等製程去除。雖然這 10方法由於結合該喷灑塔方法與該細腰管法而具有極高之廢 氣之處理效率,但是這方法的缺點是由於在該細腰管喉部 處之水顆粒與廢氣之高速流動所產生的壓力降,在該濕式 預處理單元中之快速壓力降會產生阻止在作為下一個單元 之氧化室中之已熱分解廢氣排出至該室之外部的問題。事 15實上,為了解決這問題,,985號專利使用一排氣風扇以輕易 地排出該已熱分解氣體至該室外部,但是,該排氣風扇之 安裝表不必須在一氣滌器上增加一新的組件,因此會增加 該氣滌器之製造成本。 另一方面,如果是一習知的燃燒裝置,則是在透過一 20用以軸一燃燒空間之加熱室來完成一預定燃燒程序後才 清潔一加熱室之内部,此時在其中使用的是WCF4、c2f6、 NF3等氟化氣體。 仁疋’该燃燒裝置的缺點是供應至該室之内部的加工 氣體’如作為化«鍍設備之清潔氣體之氟化氣體將會在 1272121 一加熱器之加熱條件下反應而腐蝕該室。 此外,在先前技術中,該燃燒裝置具有一冷卻器,該 冷卻器係用以冷卻在該用以形成一燃燒空間之加熱室之熱 環境中已加熱氣體,因此,該燃燒裝置的缺點是在該冷卻 5水供應通過該冷卻器之部份與該用以形成該熱環境之加熱 至之内部之間產生一急劇之溫度差,故由於蒸氣逆流會發 生粉末堵塞,或者該粉末堵塞會由於冷卻水散布或粉末堵 塞所產生之渦旋而更加嚴重。 另外,在先前技術中,該燃燒裝置的缺點是該等廢氣 !〇 與供應至該加熱室之空氣由該加熱室之上侧快速地移動至 該加熱室之下侧,使得停留在該加熱室中之時間縮短,因 此,並無法充份地滿足熱處理條件並會使處理效率降低。 前述習知廢氣處理裝置的缺點是若一最後排氣含有大 量水氣,則當在這狀態下之廢氣進入一排氣管時,會產生 15 凝結水而腐蝕該排氣管。 【發明内容】 發明概要 因此,本發明之目的是提供一用以在廢氣供應至該廢 氣處理裝置之前,完成濕式預處理程序之廢氣處理裝置(燃 2〇 燒法、濕式法、吸收法與這些方法之組合之所有種類的廢 氣處理裝置)。 本發明之另一目的是提供一種可以減少包含在最終排 氣中之水氣的廢氣處理裝置。 本發明之再一目的是提供一種可以防止一加熱室被氟 1272121 化氣體腐蝕的廢氣處理裝置。 本發明之又一目的是提供一種廢氣處理裝置,藉由改 善供應至一加熱室中之廢氣或空氣等之供應結構,該麼氣 處理裝置可以藉由增加廢氣在該加熱室中停留之時間來增 5加廢氣處理效率。 本發明之另一目的是提供一種可以藉由改善該加熱室 之冷卻結構使廢氣平順地流動之廢氣處理裝置。 本發明之第一特徵係提供一種廢氣濕式預處理裝置, 係安裝在一廢氣處理裝置之前端處,且其特徵在於該廢氣 10濕式預處理裝置包含一微粒液滴產生器,用以微粒狀地喷 灑一用以進行廢氣預處理之反應物;及一反應部,用以形 成一使廢氣與該微粒狀地喷灑之反應物反應之空間並且由 一外筒與内筒所構成,其中該反應部具有一供該等廢氣進 入之進入孔,一供該微粒狀地喷灑之反應物進入的微粒液 15滴反應物進入孔,一用以藉由該等廢氣與該微粒狀地喷灑 之反應物之反應來排出經過濕式預處理之廢氣的排出孔, 及一用以排流由該微粒狀地喷灑之反應物與該等廢氣反應 產生之污染物之放流孔。 本發明之第二特徵係提供一種廢氣濕式預處理方法, 20 係在一廢氣處理裝置之前端處完成者,其特徵在於該方法 包含下列步驟:將廢氣送入一反應部;將一微粒狀地噴灑 之反應物送入該反應部;利用在該反應部中之氣旋效應, 使該等廢氣與該微粒狀地喷灑之反應物反應;將該等濕式 預處理廢氣排放至一排出孔;及使污染物流至一放流孔。 11 1272121 本發明之第三特徵係提供一種廢氣處理裝置,包含 右· •一預處理單元,用以供應一水溶性氣體且去除一包含 來自半V體製造設備之廢氣中的水溶性氣體;一乾式處 單元’用以透過該預處理單元,藉由加熱至一預定溫度 5來氧化未處理之廢氣;一濕式預處理單元,用以溶解未透 、一乾式處理單元處理處理之未反應廢氣並且捕捉微細粉 末,一濕式處理單元,用以透過該濕式預處理單元接收該 未處理廢氣與該微細粉末且噴灑一預定溶劑以溶解該等廢 氣’並且透過一收集過濾器收集該微細粉末;及一放流 〇 一 、 卞 疋用以去除與透過該預處理單元、該濕式預處理單元與 議濕式處理單元處理過之粉末混合的溶劑。 本發明之第四特徵係提供一種廢氣處理方法,包含 有:一預處理步驟,係將一水溶性氣體供應至一供由半導 體製造設備供應之廢氣通過之通道上並且去除包含在該等 5廢氣中之水溶性氣體;一乾式處理步驟,係藉由加熱由該 預處理步驟供應之未處理廢氣至一預定溫度來產生粉末· 一濕式預處理步驟,係捕捉通過該乾式處理步驟之未處理 微細粉末並藉由在其中填充一填充劑溶解該水溶性氣體並 且轉動安裝成其一端可浸入該水溶性溶劑中之多孔質圓桎 °形管;及一濕式處理步驟,係溶解該等廢氣且藉由:納該 等未處理廢氣與通過該濕式預處理步驟之微細粉末並喷灑 該溶劑來收集該微細粉末。 本發明之第五特徵係提供一種廢氣處理裝置,包含 有:一加熱室,用以加熱廢氣以轉變其化學特性; 12 1272121 卻單元’係與該加熱室連通以冷卻由該加熱室產生之經淨 化之氣體,以捕捉包含在該經淨化之氣體中之液體成份並 使該等液體成份凝結。 本發明之第六特徵係提供一種廢氣處理裝置,包含 5有:一加熱室,係在其上與下端處具有多數進入孔以形成 一用以收納廢氣之預定空間,以處理由半導體製造設備排 出之廢氣;一加熱器,用以形成一將該等廢氣加熱至一預 疋溫度之處理條件;及一屏蔽單元,係安裝在該加熱室之 内部以防止該加熱室被一由於該等廢氣之高溫與該加熱器 10 之熱所產生之反應腐蝕。 本發明之第七特徵係提供一種廢氣處理裝置,包含 有:一加熱室,用以加熱與廢氣、惰性氣體與空氣混合之 此合氣體,以轉變其化學特性;一濕式處理單元,係與該 加熱至連通以進行水處理並且累積在該加熱室中產生的灰 15塵顆粒;及一液體分離/冷卻單元,用以吸收由該濕式處理 單所排出之經淨化之氣體之流速,以分離液體成份與談 等經淨化之氣體,並且冷卻該等經淨化之氣體以捕捉且凝 結出包含在該等經淨化之氣體中之液體成份。 本發明之第八特徵係提供一種廢氣處理裝置,包含 20有:一加熱室,用以加熱與廢氣、惰性氣體與空氣混合之 混合氣體,以轉變其化學特性;一濕式處理單元,係與該 加熱室流體性地連通以進行水處理並且累積在該加熱室中 產生的灰塵顆粒,並使用一喷霧化噴嘴,以便以一霧狀態 噴灑在一預定尺寸以下之水顆粒;及一冷卻單元,用以冷 13 〜、、式處理單%所產生之經淨化之氣體以捕捉且凝結 出包含在該等轉化之氣體中之液體成份。 5 1272121 H明之第九特_提供—種廢氣乾式處理裝置,係 -有改良加熱室者,其特徵在於該裝置包含:―加熱室, 用、形成預疋處理空間;一歧管,係安裝在該加熱室之 上二處且在其_上具有多數廢氣供應孔 ;及多數條狀加 t在該歧管之上紅垂直地安裝在該加熱室之 内部。 本I明之第十特徵係提供一種廢氣處理裝置,包含 10有」—加熱室,係在其上與下端處具有多數進入孔以形成 一用以收納廢氣之預定空間,以處理由半導體製造設備排 出之廢氟,一加熱器,係藉由將該等廢氣加熱至一預定溫 率以形成該等廢氣之處理條件;及-屏蔽單元,係安裝在 該加熱室之内部以防止該加熱室被一由於該等廢氣之高溫 15與該加熱器之熱所產生之反應腐蝕。 本發明之第十一特徵係提供一種廢氣處理裝置,係具 有一改良之冷卻結構者,其特徵在於該裝置包含:一乾式 處理單元,用以加熱與氧化在一熱環境中之廢氣,以使該 等廢氣相變化成一粉末相;一冷卻單元,係由一具有一凸 2〇緣之中空官路構成,該中空管路具有一冷卻水收納槽,該 冷卻水收納槽與該乾式處理單元之下部連通且收納一冷卻 水並且若為一裝滿狀態則可溢流至其内部;及一氣體供應 早兀,用以將預熱至一預定溫度之氣體供應至該冷卻水溢 流之上部。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust gas treatment apparatus that can more efficiently process exhaust gas discharged from a semiconductor or LCD fabric. method. Description of the Prior Art « Various manufacturing equipment and manufacturing methods are necessary in the case of m semiconductor devices, and due to the 10 CVD (chemical vapor deposition), plasma etching, and epitaxial evaporation in the method for fabricating the semiconductor device Process characteristics such as sputtering and sputtering have previously used various toxic, corrosive and flammable gases such as 33⁄4, SiA, SiF4, SiA, DCS (SiH2Cl), NH3, AsH3 4PH3, B2H6, GeH4, WF6. , TEOS, TEB, TEPO, TMB, TDMAT, NF3, CF4, C2F6, C3F8 〇15 Therefore, when toxic gases are used in the semiconductor device manufacturing method to be discharged into the air without any purification process, these toxic gases will be contaminated. The air has a serious impact on the human body and the ecosystem, so a conventional semi-conductor device production line has an exhaust gas treatment device installed at a predetermined position, and the exhaust gas treatment device is used to purify the semiconductor device manufacturing method. The toxic gas generated reaches below a reference value, and the toxic gas is discharged into the air. At present, there are usually three conventional exhaust gas treatment methods for achieving the aforementioned purposes, that is, the first method is a wet method in which an exhaust gas mainly containing a water-soluble composition is dissolved in water, and the second is contained in an exhaust gas at a high temperature. It can be 6 1272121. The third part is the physical law or chemical material. . However, in consideration of the stability and the effect of the industrial use, the exhaust gas treatment I, which is really widely used, usually uses a combination of the wet method, the sintering method and the absorption method. In particular, conventionally, the combination of the species ' and the σ ▲ wet method and the combustion method (hereinafter referred to as a combustion/wet method exhaust gas treatment device) is used to perform the effective purification treatment of the exhaust gases. · The combustion-wet process exhaust gas treatment device purifies the exhaust gases by burning the flammable substances contained in a combustion chamber and oxidizing them: 10 utilizing the exhaust gas in which the water is sprayed In order to separate a powder such as Shixia oxide which is produced during the combustion process, and at the same time remove the water-soluble ones at the same time! However, the problem with this combustion-wet exhaust gas treatment device is that powder clogging and corrosion are still present in general similar to other types of exhaust gas treatment devices. In the tncvD chamber, the exhaust gas 15 treatment device enters the exhaust gas 15 treatment device, and the fine powder contained in the exhaust gas gradually adheres to the inner wall, the pipe structure or the conduit of the combustion chamber to cause powder blockage, so it is necessary to The exhaust gas treatment device is often repaired. At the same time, the corrosive gas contained in the F or F2 can easily adhere to the inner wall of the pipe structure or the guide wall, so that they can be rotted, thereby reducing the exhaust gas treatment device. in. In general, shortening the maintenance cycle of such exhaust gas treatment devices is directly related to the use of semiconductors or LCD costs. Therefore, in order to solve these problems, a concept of installing a wet pretreatment device having a first removal at the front end of the exhaust gas treatment device before the exhaust gas enters the exhaust gas treatment device is produced. The function of corrosive 1272121 gas or fine powder contained in the exhaust gas. A conventional exhaust gas treatment system using the wet pretreatment apparatus is disclosed in U.S. Patent Nos. 5,955,037 and 5,649,985, the entire disclosure of which is incorporated herein by reference. A wet pretreatment unit which is installed to remove fine powder or acid gas contained in the exhaust gas before the exhaust gas enters the oxidation chamber. Accordingly, the wet pretreatment unit uses a wet spray tower method of adhering gas, bubbles, and the like to the exhaust gas so that the particles agglomerate to separate and remove the particles. In detail, the wet spray tower 10 method utilizes a fine particle nozzle at the upper portion of the wet pretreatment unit to spray water down in a micro-atomized state, and simultaneously allows the exhaust gas to pass through. Into the manhole at the lower part of the «pretreatment unit, the incoming pretreatment is pre-processed π and moved upwards, so that the fine particles or acid gases can be removed by bringing the argon into contact with each other in the process. Although the cost of installation, maintenance and management can be reduced, the repair is very convenient: the disadvantage of touching this method is that the water particles and the exhaust gas reduce the processing efficiency of the scale exhaust gas, because the toxic semiconductor material of the exhaust gas generated by the continuous disposal The wet pretreatment unit is installed as a pretreatment unit, and the gas is removed to remove water-soluble components from the semiconductor heating unit (4), which can be hydrolyzed into the exhaust gas, and the patent is included in the waste gas. Exposure - at least the method of spraying ^. In particular, the method of removing the granules by the method of removing the granules is to narrow the cross section through which the exhaust gas passes. The thin waist tube is a person who sprays the washing water at a high speed to accelerate the fluid. The exhaust gas entering the mouth of the thin waist tube is cleaned by the high pressure of water particles sprayed from the nozzle, and the sprayed water particles are pressurized so that the fine waist can be passed at a high speed. Throat. At this time, since the water particles are similar in flow direction to the fluids of the exhaust gases, an effective contact can be made between the exhaust gases and the water particles. By this contact, the water-soluble component, the hydrolyzable component and the dust in the exhaust gas can be removed by a process such as hydrolysis or dissolution. Although these 10 methods have extremely high exhaust gas treatment efficiency in combination with the spray tower method and the thin waist tube method, the disadvantage of this method is due to the high-speed flow of water particles and exhaust gas at the throat of the thin waist tube. The resulting pressure drop, the rapid pressure drop in the wet pretreatment unit, creates a problem that prevents the thermally decomposed exhaust gas in the oxidation chamber as the next unit from being discharged to the outside of the chamber. In fact, in order to solve this problem, the 985 patent uses an exhaust fan to easily discharge the pyrolyzed gas to the outdoor portion, but the installation table of the exhaust fan does not have to be added to a gas scrubber. A new component will therefore increase the manufacturing cost of the scrubber. On the other hand, if it is a conventional combustion device, the inside of a heating chamber is cleaned after a predetermined combustion process is completed through a heating chamber for the shaft-combustion space, in which case the Fluorine gas such as WCF4, c2f6, NF3. A disadvantage of the burner is that the process gas supplied to the interior of the chamber, such as the fluorinated gas as a cleaning gas for the plating apparatus, will react under the heating of a heater of 1272121 to corrode the chamber. Further, in the prior art, the combustion apparatus has a cooler for cooling the heated gas in the heat environment of the heating chamber for forming a combustion space, and therefore, the disadvantage of the combustion apparatus is The cooling 5 water supply generates a sharp temperature difference between the portion of the cooler and the heating to the inside of the heat environment, so that powder clogging may occur due to vapor backflow, or the powder may be blocked due to cooling. The vortex produced by water spreading or powder blockage is more serious. Further, in the prior art, a disadvantage of the combustion apparatus is that the exhaust gas and the air supplied to the heating chamber are rapidly moved from the upper side of the heating chamber to the lower side of the heating chamber, so that staying in the heating chamber The time in the reduction is shortened, and therefore, the heat treatment conditions are not sufficiently satisfied and the treatment efficiency is lowered. A disadvantage of the conventional exhaust gas treatment device is that if a final exhaust gas contains a large amount of moisture, when the exhaust gas in this state enters an exhaust pipe, 15 condensed water is generated to corrode the exhaust pipe. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an exhaust gas treatment device (burning method, wet method, absorption method) for performing a wet pretreatment process before exhaust gas is supplied to the exhaust gas treatment device. All kinds of exhaust gas treatment devices in combination with these methods). Another object of the present invention is to provide an exhaust gas treatment device which can reduce moisture contained in the final exhaust gas. It is still another object of the present invention to provide an exhaust gas treating apparatus which can prevent a heating chamber from being corroded by fluorine 1272121. It is still another object of the present invention to provide an exhaust gas treatment device which can improve the supply time of exhaust gas or air supplied to a heating chamber by increasing the time during which the exhaust gas stays in the heating chamber. Increase 5 plus exhaust gas treatment efficiency. Another object of the present invention is to provide an exhaust gas treating apparatus which can smoothly flow exhaust gas by improving the cooling structure of the heating chamber. A first feature of the present invention provides an exhaust gas wet pretreatment apparatus installed at a front end of an exhaust gas treatment apparatus, and characterized in that the exhaust gas 10 wet pretreatment apparatus comprises a particulate droplet generator for particles Spraying a reactant for pretreatment of the exhaust gas; and a reaction portion for forming a space for reacting the exhaust gas with the particulate sprayed reactant and comprising an outer cylinder and an inner cylinder; Wherein the reaction portion has an inlet hole for the exhaust gas to enter, and 15 droplets of the reactant liquid for the particulate sprayed reactant enter the hole, and the waste gas enters the hole through the exhaust gas and the particulate matter The reaction of the sprayed reactant discharges the discharge hole through the wet pretreated exhaust gas, and a discharge hole for discharging the contaminant generated by the reaction of the particulate spray with the exhaust gas. A second feature of the present invention provides a wet pretreatment method for exhaust gas, 20 being completed at a front end of an exhaust gas treatment device, characterized in that the method comprises the steps of: feeding the exhaust gas into a reaction portion; The ground sprayed reactant is sent to the reaction portion; the exhaust gas is reacted with the particulate sprayed reactant by a cyclone effect in the reaction portion; and the wet pretreatment exhaust gas is discharged to a discharge hole And letting the contaminants flow to a discharge orifice. 11 1272121 A third feature of the present invention provides an exhaust gas treatment device comprising a right pre-processing unit for supplying a water-soluble gas and removing a water-soluble gas contained in the exhaust gas from the semi-V body manufacturing apparatus; The dry unit is configured to oxidize untreated exhaust gas by heating to a predetermined temperature 5 through the pretreatment unit; a wet pretreatment unit for dissolving unreacted exhaust gas treated by the non-transparent and dry processing unit And capturing a fine powder, a wet processing unit for receiving the untreated exhaust gas and the fine powder through the wet pretreatment unit and spraying a predetermined solvent to dissolve the exhaust gas' and collecting the fine powder through a collection filter And a discharge stream for removing solvent mixed with the powder processed through the pretreatment unit, the wet pretreatment unit, and the wet processing unit. A fourth feature of the present invention provides an exhaust gas treatment method comprising: a pretreatment step of supplying a water-soluble gas to a passage through which exhaust gas supplied from a semiconductor manufacturing facility passes and removing the exhaust gas contained in the waste gas a water-soluble gas; a dry treatment step of generating a powder by heating the untreated waste gas supplied from the pretreatment step to a predetermined temperature. A wet pretreatment step captures untreated by the dry treatment step a fine powder and dissolving the water-soluble gas by filling therein a filler and rotating the porous round tube which is immersed in the water-soluble solvent at one end thereof; and a wet processing step of dissolving the exhaust gas And collecting the fine powder by passing the untreated exhaust gas and the fine powder passing through the wet pretreatment step and spraying the solvent. A fifth feature of the present invention provides an exhaust gas treatment apparatus comprising: a heating chamber for heating an exhaust gas to change its chemical characteristics; 12 1272121 but a unit 'connecting with the heating chamber to cool the heat generated by the heating chamber Purifying the gas to capture the liquid components contained in the purified gas and to condense the liquid components. A sixth feature of the present invention provides an exhaust gas treatment apparatus comprising: a heating chamber having a plurality of inlet holes at the upper and lower ends thereof to form a predetermined space for accommodating the exhaust gas to be processed by the semiconductor manufacturing equipment Exhaust gas; a heater for forming a processing condition for heating the exhaust gas to a predetermined temperature; and a shielding unit installed inside the heating chamber to prevent the heating chamber from being affected by the exhaust gas The high temperature reacts with the reaction of the heat of the heater 10 to corrode. A seventh feature of the present invention provides an exhaust gas treatment device comprising: a heating chamber for heating a gas mixed with exhaust gas, an inert gas and air to transform its chemical characteristics; a wet processing unit Heating to communication for water treatment and accumulating ash 15 dust particles generated in the heating chamber; and a liquid separation/cooling unit for absorbing the flow rate of the purified gas discharged from the wet processing unit to The liquid component is separated from the purified gas, and the purified gas is cooled to capture and condense the liquid component contained in the purified gas. An eighth feature of the present invention provides an exhaust gas treatment device comprising: a heating chamber for heating a mixed gas mixed with exhaust gas, an inert gas and air to transform its chemical characteristics; a wet processing unit The heating chamber is fluidly connected to perform water treatment and accumulate dust particles generated in the heating chamber, and uses a spray nozzle to spray water particles below a predetermined size in a mist state; and a cooling unit The purified gas produced by treating the single % by cold 13 to process and condense the liquid component contained in the converted gas. 5 1272121 H ninth special _ provides a waste gas dry treatment device, which has an improved heating chamber, characterized in that the device comprises: a heating chamber, which is used to form a pre-treatment space; a manifold is installed in The heating chamber has two upper and upper exhaust gas supply holes thereon; and a plurality of strips t are vertically red-mounted on the inside of the heating chamber. The tenth feature of the present invention provides an exhaust gas treatment device comprising a heating chamber having a plurality of inlet holes at the upper and lower ends thereof to form a predetermined space for accommodating the exhaust gas to be processed by the semiconductor manufacturing equipment. The waste fluorine, a heater, is formed by heating the exhaust gas to a predetermined temperature rate to form processing conditions of the exhaust gas; and a shielding unit is installed inside the heating chamber to prevent the heating chamber from being The reaction due to the high temperature 15 of the exhaust gases and the heat of the heater is corroded. An eleventh feature of the present invention provides an exhaust gas treating apparatus having an improved cooling structure, characterized in that the apparatus comprises: a dry processing unit for heating and oxidizing exhaust gas in a thermal environment so that The exhaust gas phase is changed into a powder phase; a cooling unit is composed of a hollow official road having a convex 2 rim, the hollow pipeline has a cooling water storage tank, and the cooling water storage tank and the dry processing unit The lower portion is connected to receive a cooling water and overflows to the inside if it is full; and a gas supply is supplied to supply the gas preheated to a predetermined temperature to the upper portion of the cooling water overflow .

14 1272121 本發明將可其實施例之以下詳細說明並配合附圖而更 加了解,且其範疇將在以下申請專利範圍下指出。 圖式簡單說明 本發明之以下與其他特徵與優點將可藉由配合附圖詳 5 細說明其較佳實施例而更加了解,其中: 第1至3圖是顯示本發明之廢氣處理裝置之濕式預處理 裝置的例子的圖; 第4圖是顯示藉由該濕式預處理裝置,氨氣之去除效率 可高達80%之圖表; 10 第5圖是顯示採用用於第3圖之多次廢氣處理之多次濕 式預處理之濕式-燃燒廢氣處理裝置之結構的圖; 第6與7圖是結構圖,顯示用以去除包含在廢氣中之液 體成份之本發明之廢氣處理裝置的例子; 第8至11圖顯示適用於本發明之冷卻單元的例子; 15 第12至14圖顯示適用於本發明之液體分離/冷卻單元 之實施例; 第15圖是用以顯示以多階段方式安裝之液體分離/冷 卻單元的結構圖; 第16圖是用以顯示本發明之廢氣乾式處理裝置之結構 20 的圖; 第17圖是第16圖之縱向橫截面圖; 第18圖是用以顯示本發明之廢氣乾式處理裝置之另一 加熱室之結構的圖; 第19與20圖是用以顯示具有本發明之防止加熱室腐蝕 1272121 裝置之廢氣處理裝置之結構的圖; 第21圖,,、具不由於在第19圖之結構中產生腐姓而藉由在 該内,中形f —假想孔來測量廢氣肌)之濃度的結構; 第22圖是有關於在該加熱室與該内室之間之任-位置 處«由第21圖所供應之乂流量所產生之叫濃度變化之 測量值的圖表; 第23圖疋用以顯不本發明之實施例之廢氣處理褒置 (加熱室)之一部份的圖; ‘ 第24岐第23圖之β_Β,之_面圖; $25Affil7^以顯脈衝單元結合於第24圖之冷卻 水供收納槽中之結構的圖; 第加圖疋用以顯示_脈衝單元結合於第%圖之冷卻 水供應管路中之結構的圖; 第26圖疋用以顯示第以圖之氣體供應單元係構成為另 15 —種型態之例子的圖;及 第27厨是用以顯示該冷卻單元之管路以一預定角度傾 斜之例子的圖。 【實施方式】 本發明之詳細說明 2〇 、 以下本發明將配合其中顯示本發明之較佳實施例之圖 式更詳細地說明,但是,本發明可以不同之型式來實施且 不應又限於在此提出之實施例。此外,這些實施例係使這 5兄明書更通徹與完整,且將完整地傳達本發明之範疇給所 屬技術領域中具有通常知識者。在圖式中,有將多數層與 16 1272121 區之厚度加以誇大以便清楚顯示,而在整份說明書中係以 類似之數子表示類似之元件。 [實施例1] 第1圖是用以顯示本發明之廢氣處理裝置之濕式預處 5理裝置之—例的圖; 弟2圖是用以顯示本發明之廢氣處理裝置之濕式預處 理裝置之另一例的圖; 苐3圖是用以顯示本發明之廢氣處理裝置之濕式預處 理裝置之另一例的圖;且 10 第4圖是用以顯示一氨氣之去除效率可藉由該濕式預 處理裝置達到80%的圖表。 如第1圖所示,用於進行本發明之廢氣處理之濕式預處 理裝置10主要包括供廢氣進入之廢氣進入孔11,一供用於 進行廢氣處理之反應物之反應物進入孔12, 一可利用一氟 15旋法對該等廢氣進行濕式預處理的反應部2〇,一用以排出 該經濕式預處理之廢氣之排出孔21,及一用以流出污染物 之放流孔31。 本發明之濕式預處理裝置之反應部20使用旋風分離 法’利用由流體渦旋所產生之離心力將包含在該等氣體中 20之固體顆粒分離。當在一半導體製造過程或一LCD製造過 程期間排出之該等廢氣藉由這旋風分離法在該濕式預處理 裝置之内部渦旋時,噴灑該反應物以去除在該等廢氣中之 水溶性物質或微細粉末。該反應部2〇具有一内筒19與一外 筒l〇a,且該外筒i〇a具有一圓柱形筒17與一由該圓柱形筒 1272121 17之下端向下延伸的角錐形筒18。依此結構,該外筒咖之 , 半徑係由在該圓柱形筒17與該角錐形筒18之間的一界面減 少至該外筒l〇a之下端,·因此,該外筒具有如一倒置酒瓶之 整體結構。該圓柱形筒17在其上端處設置有一外_内筒連接 5部17a,且該角錐形筒18在其下端處設置有一放流孔3丨。以 往’雖然由該圓柱形筒17與該角錐形筒18所構成之外筒 之全長愈長’該等廢氣與該反應物之接觸可能性愈大,但、 是仍以使用一習知最適當尺寸之旋風分離器為佳。 該内筒19之整體結構具有一習漏斗形狀,而此形成一 籲 10具有一保持某種程度之半徑的頸部,並且該半徑朝向由該 内同19之上端至下端的方向逐漸減少,接著由該頸部至一 下端保持一定。該内筒19設置有安裝在其上端處之排出孔 21 ’及一安裝在下側且在該頸部正下方之内_外筒連接部 19a。該内筒19之下端延伸至該圓柱形外筒17之下端附近’ I5其原因是由於以一將在以下說明之微細化喷嘴15喷灑該反 應物之寬度在該反應部20之上下方向非常大,因此必須防 参 止在該等廢氣排至該排出孔21之前,該等最後預處斑廢氣; 與該反應物再次接觸。該外-内筒連接部17a與該内_外筒速 接部19a係互相固定在一起,以連接該内筒19與由該圓枉形 2〇筒17與該角錐形筒18構成之外筒l〇a。在考慮由於粉末堵蹇 / 而必須修理該濕式預處理裝置之情形下固定連接該外筒, 10a與該内筒19時,最好是以一夾具等來固定連接。參見圖 - 式,插入該反應部20之内筒19之一部份係以一虛線顯系’ 且各部份之固定連接部份係以示意的方式表示以避免伏第 18 1272121 1圖變得太複雜。 該圓柱形筒17具有安裝在其外壁且可供由一 cvd主室 排出之廢氣進入的廢氣進入孔11,該廢氣進入孔係安裝成 可使該等廢氣之進入方向與該圓柱形筒17之垂直方向垂 5 直。即,該等廢氣係朝該圓柱形筒17之外壁之一切線的方 向進入。該圓柱形筒17亦具有安裝在該外壁處之反應物進 入孔12 ’且類似於該等廢氣,該反應物朝與該圓柱形筒17 之外壁之切線方向進入。即,該廢氣進入孔丨丨與該反應物 進入孔12係安裝成可使該廢氣進入方向與該反應物進入方 10 向互相類似。由於這種結構,以垂直於該圓柱形筒17之外 壁之方向進入之該等廢氣與該反應物以互相類似之方向流 動並且可以在該圓柱形筒17與該角錐形筒18中轉動並向下 移動’因此使一旋風分離效應達到最大。因為該反應物之 進入係在該進入廢氣上方完成,該反應物進入孔12係安裝 15在該廢氣進入孔11上方,以再增加該等廢氣之淨化處理效 率0 安裝在該反應物進入孔12上的是一用以微細地喷灑霧 化該反應物之微細化喷嘴15,如此可增加廢氣處理效率。 連接兩喷射孔之微細化噴嘴15使用一直接加壓法,而這兩 20噴射孔分別是一氣體喷射孔13與一反應物喷射孔14 ; 一氣 體噴射孔閥13a與一反應物喷射孔閥14a係分別安裝在各個 噴射孔前方。該微細化噴嘴15之前端穿過該反應物進入孔 12,且該微細地喷灑霧化反應物16進入該反應部2〇而與該 荨廢氣反應。 19 1272121 一濕度降低部23安裝在該排出孔21上方,而該排出孔 21則安裝在該反應部20之内筒19之上端。該反應部20之内 筒19與濕度降低部23係藉由固定連接該排出孔21與一濕度 降低部進入孔22來連接,而該濕度降低部進入孔22則安裝 5在該濕度降低部23之下端。該排出孔21與該濕度降低部進 入孔22亦以類似於前述外筒i〇a與内筒19之方式,藉由一爽 具等固定連接為佳。該濕度降低部23是連接該排出孔21與 該廢氣處理裝置之圓柱形管結構,且一隔熱構件24安裝在 該濕度降低部之外壁上以便均勻地加熱整個外壁。安裝在 10該濕度降低部23上的是一用以使加壓氣體通過該濕度降低 部23之外壁而進入該濕度降低部23之氣體加壓裝置25,依 此方式,較佳地,該氣體加壓裝置25係安裝在該等加壓氣 體進入該濕度降低部23而到達該廢氣處理裝置之進入孔的 位置處,且該氣體加壓裝置25具有該氯體加壓裝置之氣體 15喷射孔26及一與其相連之閥26a。在此說明書中作為參考的 是該廢氣處理裝置進入孔、該廢氣處理裝置與該放流槽並 未顯示以表現一簡單之圖。 此外,在用於本發明之廢氣處理之濕式預處理裝置1〇 中,一與腐蝕性廢氣接觸之零件與管結構等以塗布有一聚 2〇 合物為佳,且以塗布有一如Teflon™之氟樹脂材料更佳。 以下將說明一依據實施例1利用本發明之濕式預處理 裝置10來濕式預處理廢氣的方法。 首先,在製造半導體或LCD等時所產生之廢氣朝該圓 柱形筒17之外壁之切線方向通過該廢氣進入孔11而進入本 20 1272121 發明之濕式預處理裝置ίο,另一方面,用以與進入該廢氣 進入孔11之廢氣反應之反應物亦朝該圓柱形筒17之外壁之 切線方向通過安裝在該圓柱形筒17之外壁處之反應物進入 孔12而進入該濕式預處理裝置1〇。如前所述,在本發明中, 5 該反應物係朝與該廢氣流動類似之方向進入,在用於本發 明之廢氣處理之濕式預處理裝置中所使用之反應物可包含 一如一般中性水、自來水、NaOH或CaOH2等化學物之稀释 溶液與電解水。此外,該反應物通過該反應物喷射孔14被 導入該微細化噴嘴15,此時,一般中性水之流量範圍大約 10 是在100至300cc/min之間為佳,且以大約在200至300cc/min 之間更佳。如前所述,由於用來作為反應物之一般中性水 之較佳流量不超過300cc/min,故本發明之濕式預處理裝置 10可以增加廢氣處理效率且使廢水排放達到最少。因此, 本發明之濕式預處理裝置是對環境無害的且可以大大地減 I5少所使用之反應物的量,以減少半導體或LCD之成本。以 下,本發明將說明當該一般水作為該反應物使用時之情形。 如前所述,本發明之濕式預處理裝置1〇使用該直接加 壓法之微細化噴嘴15作為一微細地喷灑霧化器以增加該等 廢氣之處理效率。與該等廢氣反應之反應物係與在該微細 2〇 化喷嘴15處之微細喷灑之氣體相遇且可通過該反應物進入 孔12射入該反應部20,事實上,當使用該一般中性水作為 該反應物時,該微細化喷嘴15將該一般中性水以顆粒尺寸 在50μιη以下之微細喷灑氣體喷出,且與一5〇〇|11111顆粒尺寸 之習知方法相較,這顆粒尺寸值小於其大約1〇倍。由於在 1272121 該濕式預處理裝置中之廢氣的處理效率主要是由在該等廢 氣與該反應物之間之接觸面積與該反應物之溫度來決定, 所以當該反應物以微細之液滴射出而與該等廢氣反應時, 該等廢氣之處理效率會因為以下原 因而增加。首先,該微 5細地喷灑霧化反應物之整體表面積增加,因此,當它增加 日守’與該專廢氣接觸之可能性與接觸之面積亦隨之增加。 其次,由該微細化噴嘴進行之反應物的微細地喷灑霧化過 程可被視為一擬絕熱膨脹過程,因此,該反應物之温度在 使該反應物微細地噴灑霧化之過程中將會降低,以增加對 10欲處理之水溶性物質之反應物的溶解度。通常,溫度愈低, 氣體對液相之溶解度愈高。 氮氣通過該氣體噴射孔13進入該微細化喷嘴15,此 時,氮氣之流量係以在大約5至201pm的範圍内為佳,且以 在大約10至201pm的範圍内更佳。 I5 該反應物與該氮氣之流量係藉由安裝在各孔前之該氣 體噴射孔閥13a與該液體喷射孔閥14a來調整,且欲與該氮 氣混合之該反應物係藉由微細化喷嘴來加壓以形成多數欲 以一圓形霧狀通過該反應物進入孔12射入該反應部20之微 細液滴16。 2〇 如前所述,該濕式預處理裝置10利用旋風分離法來對 該等廢氣進行濕式預處理,且通過該反應物進入孔12之反 應物類似於該等廢氣地旋轉且沿著該圓柱形筒17與該角錐 形筒18之内壁向下移動;此時,在該角錐形筒is處之旋轉 速度增加以得到最大之分離效果’且在該等廢氣中之微細 22 1272121 5 10 15 20 ,末係藉由離心力與重力而分離而收集在該角錐形筒Μ之 此外’在該專廢氣中之水溶性氣體係溶解於該反 應物中而可在包含於該反應物中之狀態下,藉由離心力與 ,力而分離並收集在該角錐形筒18之最下端。由於該等廢 ^舆該反應物旋轉且沿該圓桎形筒丨7與該角錐形筒18之内 、 移動而互相反應,該等廢氣與該反應物之接觸時間 增加’且該反應物之流轉該等純之流動料在一類似 之方向上以使該旋風分離效果達到最大。 相較於先前技術之噴灑塔方法(美國專利第5,955,03: 號)與細腰管法咖專利第5,649,985號),使用該旋風分離 法之本發明之赋預處理裝置有以下伽。與該喷灌 塔方法相較,本發狀魏分縣具妹款純處理效 率。在揭露於’〇37專利巾之錢塔方法之濕式預處理褒置 中’由於料廢氣之流動與該反應物之流動不是互相相似 之方向’ a此’與該執分離法相較,該等廢氣與水顆粒 之接觸時驗短,糾會再降低轉廢氣之處理效率。此 外,如果在揭露於,985專财之細腰管法之赋預處理裝置 中,該等廢氣之流動與該反應物之流動是互相相似之方 向,且當就應物通财細辭喉料,該絲物以一高 速加壓’則與本發明之旋風分離法相較,該,奶裝置具有高 廢耽處理效率,㈣’該細腰管法之缺點是壓力降非常大。 以往,已知該細腰料級大約大_倾塔錄1〇倍之 壓力降,相反地,本發明之濕式财理裝置使用可產生小 於該細腰較之壓力降岐風分離法,因《必另外安裝 23 1272121 排氣風扇來解決如該f985專利之壓力降的問題。 如其中溶解有已分離與收集之細微粉末與水溶性氣體 之反應物與污泥沈澱物等之污染物係通過該放流孔31而儲 存在該一貯存槽(圖未示)中,相反地,已去除該水溶性氣體 5且在該反應部20中業經濕式預處理之該微細粉末與該等廢 氣在該反應部20之中心處形成一可沿著該内筒19通過該排 出孔21移動之向上轉動氣流。 排放至該排出孔21之濕式預處理氣體通過安裝有該隔 熱構件24之濕度降低部23且可通過該廢氣處理裝置進入孔 10進入該廢氣處理裝置,此時,該等濕式預處理氣體包含大 里之微細贺灑霧化反應物與蒸氣。因此,該濕度降低部23 之安裝目的是當含有大量微細液滴或蒸氣之氣體通過該排 出孔21而直接進入該廢氣處理裝置時,防止該廢氣處理裝 置之整體使用壽命由於在該廢氣處理裝置中之加熱單元等 I5的腐蝕而減少。首先,該等預處理氣體之濕度在該濕度降 低部23中由於重力之效應而減少,即,排放至該排出孔21 之含有大量液滴之廢氣由於其重力而並未通過該濕度降低 部23,並且可再次在該角錐形筒18之最低端處被撤集並排 流至該放流孔31。濕度降低之另一個原因是該等氣體之低 20濕度,由於此低濕度,可將一低濕度氣體經過安裝在該濕 度降低部23處之氣體加壓裝置25而喷射至該濕度降低部 23,以降低該等預處理廢氣之濕度。該低濕度氣體經由該 氣體加壓裝置而喷入該濕度降低部23,且所喷入之低濕度 氣體可藉由閥26a之流量來調整。此時,該低濕度氣體以使 1272121 用鼠氣或經加工乾空氣為佳,且以業經加熱之氮氣更佳。 除了前述目的以外,安裝在該濕度降低部23處之該氣 體加壓裝置25還可用來達成另一目的。當該濕式預處理廢 氣進入咸廢氣處理裝置時’該等廢氣在該廢氣處理裝置之 5進入孔處與可存在於該廢氣處理裝置中之氧氣反應以產生 該粉末’因此產生粉末堵塞。因此,如果在該氣體加壓裝 置25中之加壓氣體可朝該廢氣處理裝置之進入孔喷射以去 除該粉末,則可防止在該廢氣處理裝置之進入孔處發生粉 末堵塞。為了同B夺達到前述兩個目的,在該濕度降低部23 10中之氣體加壓裝置25係以該等加壓氣體朝該廢氣處理裝置 之進入孔喷射之方式安裝為佳。此時,該等加壓氣體係以 類似於用以降低濕度之該低濕度氣體之方式使用氮氣或經 加工乾燥空氣為佳,且以業經加熱之氮氣更佳。 該隔熱構件24係安裝成在移動至該廢氣處理裝置時, 15 可抑制該等預處理廢氣沈積在該等管路結構等上,因為該 等預處理廢氣具有高濕度,該等廢氣會沈積在相當低溫之 管路結構等上,並因此造成粉末堵塞。該隔熱構件24係以 保持在大約50°C至200°C之範圍内為佳,且在大約100°C至 150艺更佳。 20 第2圖係以另一例顯示濕式預處理裝置30之結構的 圖,除了該反應部20具有該旋風分離效應以外,其結構與 第1圖之濕式預處理裝置1〇完全相同。雖然第1圖之濕式預 處理裴置10之反應部20之外筒具有該圓柱形筒17與該 角錐形筒18,但是第2圖之濕式預處理裝置3〇之反應部20之 25 1272121 外筒10a則僅具有該圓柱形筒17。具有僅由該圓柱形筒17構 成之外筒l〇a的反應部20無法得到最大分離效果,這是因為 該等廢氣在角錐形筒處之旋轉速度會增加的緣故。因此, 雖然第2圖之濕式預處理裝置30具有減少旋風分離效果而 5 降低該等廢氣之預處理效果,但是可減少該濕式預處理裝 置之製造成本。在考慮該旋風分離器之最佳尺寸以得到最 大廢氣處理效率時,該圓柱形筒與該角錐形筒之製造成本 高於只有該圓柱形筒之製造成本,最後,減少該濕式預處 理裝置之製造成本將具有可以減少降低半導體或LCD之製 1 〇 造成本。 第3圖顯示本發明之另一實施例之用以處理廢氣的複 式濕式預處理裝置40 ’其中複式表示該濕式預處理裝置1〇 係由至少兩廢氣處理裝置所構成。第3圖顯示一由三個濕式 預處理裝置10構成之結構’其中各濕式預處理裝置完全 I5相同。在第3圖中,主要元件之標號係只標示在一濕式預處 理裝置上’以達簡化之目的,其中省略了氣體噴射孔1 3、 該反應物喷射孔14以及與其結合並與該微細化噴嘴15連接 的閥13a與14a。此外,類似於第2圖之濕式預處理裝置抑而 僅具有該圓柱形筒17之各濕式預處理裝置1〇之外筒i〇a是 2〇可允許的,在這種情形下,該複式濕式預處理裝置可以如 前所述地減少製造成本。 請參閱第3圖,本發明之廢氣處理用複式濕式預處理裝 置40具有一呈圓枉形且安裝在貯槽前方的預貯槽32,該放 流孔31固定連接於安裝在連接管39之上端處的連接管進入 26 1272121 孔39a ’因此,各濕式預處理裝置順該預貯槽η連接。如 以下所述’钱在咖_32之—側上端的是—用以將儲 存在該預貯槽32中之一般中性水之水位保持在一預定水位 的水位保持器33 ’且該水位保持器33是由—習知管路構件 5所構成。該水位保持器33必須較佳地安裝在該預貯槽以 上端上方,因為其安裝位置非常重要。該水位保持器^之 官路構件之較佳構形係,如第3圖所示,該等管路由該預貯 槽32之一侧上端向上延伸至一在該放流孔31與該預貯槽μ 之間的水位保持線34,並且與該預貯槽32水平地延伸以環 10繞該預射指’接著向下延伸而可進入該貯槽。該預貯槽32 之下端與延伸通過一閥37之放流管構件41連接,且該閥37 連接由該水位保持器33向下延伸的管路結構而形成一輸送 管形狀。這些用以連接該預貯槽32與貯槽的管路結構係以 儘可能直線地形成為佳,以防止粉末堵塞。安裝在該預貯 15 槽32上的是用以在其右/左側處密封該預貯槽32之蓋體,且 設置在安裝有該蓋體38之一側處的是一穿過該蓋體38與讓 預貯槽32之預貯槽加壓器36。 利用本發明之複式濕式預處理裝置4 0來預處理該等廢 氣的原因是半導體或LCD製造設備之主室主要是由多數室 20 構成。由於必須連續沈積在該半導體或1^0製程中所需之 各種物質,故需要使用與CVD室連接之多數室。包含多數 室之各室使用不同之反應氣體,因為在各室中沈積的是不 同的物質。因此,對應於各室之濕式預處理裝置是必要的, 以減少在由各室排出之各種廢氣一起處理時由於在該等廢 1272121 氣間之無法預料的反應而發生爆炸危險或粉末堵塞之可能 性。最後,該等主室之數目決定了在該複式濕式預處理裝 置中之濕式預處理裝置的數目。 以下將說明利用本發明之複式濕式預處理裝置40濕式 5 預處理廢氣的方法,由各CVD室排出之廢氣係藉由安裝在 各CVD室之濕式預處理襄置預處理,且與第1圖之說明相同 地,排出至該排出孔21之業經預處理的廢氣係經由該濕度 降低部23而進入該濕式預處理裝置。因此,以下將說明在 該等污染物’即’濕式預處理所產生之物質,排流至談放 10 流孔31後的處理過程。 安裝該預貯槽32之目的是要有效地去除由該濕式預處 理裝置排出之粉末。當該預貯槽32如同第丨與】圖之該等濕 式預處理裝置10與20 —般地不存在時,由於排放至該放流 孔31之粉末狀污染物質會因為由該放流孔31至該貯槽之管 I5路結構並非直線等原因而很難移動至該貯槽,因而無法有 放地將之去除,故會發生粉末堵塞。因此,前述問題的解 決方式是可以藉由在該貯槽前方安裝該預貯槽32以有效地 絲由Μ式預處理裝置排出之粉末。—將該粉末由該預 貯槽32中移除之方法如下。該預貯槽32主要儲存該等污染 該等?可染物質中之粉末35係利用與該一般中性水之密度差 ㈣積在韻槽32之底部。藉由連續㈣賴式赋 ^置40可累積職量之粉末,在絲㈣册槽32之預 定位置處之預貯槽加壓器36中加壓之氣體則朝向該預貯槽 1272121 32之内側喷射以均勻地混合在該一般中性水中之粉末。該 預貯槽加壓器36使用氮氣或經過潔淨處理之乾燥空氣作為 加壓空氣,且可使用該一般中性水來取代該等氣體。 當與該預貯槽32結合之該閥37開啟時,粉末將由該預 5 貯槽3 2與該一般中性水一起通過該放流管結構41而移動至 該貯槽’由於該粉末與欲移動至該貯槽之一般中性水均勻 地混合,故可以比未安裝該預貯槽32時更有效地去除該粉 末。當經由週期性地氣體噴射與閥開啟而去除在該預貯槽 3 2中之粉末時,本發明之複式濕式預處理裝置4〇可以非常 易地維濩與修理。堆積在該預貯槽32中之粉末可以週期性 地藉由開啟該等蓋體38來清除。 15 20 儲存在該預射槽32中之一般中性水的水位以保持在對 應於第3圖中之水位保持線%為佳,排放至該複式濕式預處 理裝置40之-射性捕儲存在糊雌32中,以使該水 位逐漸地上升;當水位上升_水轉躲上料,超過 該水位保持線之-般中性水的水將利用該水位保持器_ 動至貯槽,以便—直簡該預貯槽以之水位_定。^ 槽32係以在本發明之複式濕式預處縣置40操作時 持充滿之狀態為佳,以防止該等廢氣彻該—般中性水互 相接觸,其理由是由於該预貯槽32充 會產生無法簡之_危險與粉末堵塞充;財性水時 前述濕式預處理裝置具有以下致:。 首先’藉由在半導體或LCD製击山 廢氣處_之前,於 29 1272121 5 15 下效果。只有大約2〇%之水溶性氣體進入該 廢礼處理裝置,因為包含在該等廢氣奴水雜氣體之量 可以利用該濕式預處理裝置減少大約8G%。例如,在該二 ^預處理裝置中可淨化大約80%由該CVD室進人之匕氣體 或氨氣。因此,可限制F2氣體進入該廢氣處理裝置戋彤成 氮化合物以減少該廢氣處理裝 置之廢氣的處理負荷^且可 防止排放腐蝕與有毒物質。 第4圖是用以顯示在該濕式預處理裝置中之氨氣之處 理結果,並作為顯示本發明之效果之例子的圖,這圖顯示 田初始氨濃度是5,794ppmV,且進入該微細化噴嘴中之气氣 里疋191pmd時,在依據進入談微細化喷嘴之流量通過該場 式預處理裝置後,一氨濃度與一對應氨去除效率。雖然該 氨去除效率未受到該一般中性水很大的影響,但是當流量 變成30〇cc/min時,在該濕式預處理裝置中之氨去除效率變 成大約80%。此外,由於該微細粉末已在先前使用該濕式 預處理裝置時與該等水溶性物質一起去除了,可實質地防 止該等廢氣處理裝置之問題,即,粉末堵塞。 其次,相較於未使用該濕式預處理裝置,當使用該濕 式預處理裝置時,該廢氣處理裝置之廢氣處理負荷大量地 2〇減少。依據第4圖之結果,當操作時間係設定成與該廢氣處 理農置相同時,該等廢氣處理裝置負荷減少大約8〇%,因 此,該廢氣處理裝置之各零件之使用壽命延伸以加長替換 時間,並藉此減少A/S成本。此外,該廢氣處理裝置之整體 操作時間增加以減少半導體或LCD製造成本。 30 1272121 第三’本發明之濕式預處理裝置具有一先去除腐蝕氣 體,特別是在該半導體或LCD製造過程中排出之氟氣的效 果,因此,有效地處理使用在該半導體或LCD製造過程中 清潔主CVD室的大量氣體的效果極佳。因此,在用以處 5理NF3氣體之廢氣處理裝置中確實地使用本發明之濕式預 處理裝置,可預期的是用來作為該主CVD室之清潔氣體之 量將在此之後大量增加。 [實施例2] 第5圖是用以顯示採用用以處理前述第3圖中之多數廢 10氣之複式濕式預處理裝置40的濕式預處理裝置之結構。 如第5圖所示’該廢氣處理裝置包含―濕式預處理裝置The invention will be further described in the following detailed description of the embodiments of the invention, and the scope of BRIEF DESCRIPTION OF THE DRAWINGS The following and other features and advantages of the present invention will become more apparent from the detailed description of the accompanying drawings in which: FIG. A diagram of an example of a pretreatment apparatus; Fig. 4 is a graph showing that the removal efficiency of ammonia gas can be as high as 80% by the wet pretreatment apparatus; 10 Fig. 5 is a view showing the use of Fig. 3 multiple times FIG. 6 and FIG. 7 are structural diagrams showing the exhaust gas treatment device of the present invention for removing liquid components contained in exhaust gas; FIG. Examples; Figures 8 through 11 show examples of cooling units suitable for use in the present invention; 15 Figures 12 through 14 show an embodiment of a liquid separation/cooling unit suitable for use in the present invention; Figure 15 is a diagram showing a multi-stage manner FIG. 16 is a view showing a structure 20 of the exhaust gas dry processing apparatus of the present invention; FIG. 17 is a longitudinal cross-sectional view of FIG. 16; Show the invention FIG. 19 and FIG. 20 are diagrams showing the structure of an exhaust gas treatment apparatus having the apparatus for preventing corrosion of a heating chamber of the present invention; FIG. 21, and FIG. A structure in which the concentration of the exhaust gas is measured by the medium-shaped f-imaginary hole in the structure of FIG. 19; FIG. 22 is related to the relationship between the heating chamber and the inner chamber. A diagram of the measured value of the change in concentration resulting from the flow rate of the helium supplied from Fig. 21; Fig. 23 is a view showing the exhaust gas treatment device (heating chamber) of the embodiment of the present invention a part of the figure; 'Fig. 24 岐 23 of β_Β, _ face diagram; $25Affil7^ with the explicit pulse unit combined with the cooling water for the structure of the storage tank in Figure 24; A diagram showing the structure in which the _pulse unit is incorporated in the cooling water supply line of the %th diagram; FIG. 26 is a diagram for showing an example in which the gas supply unit of the first drawing is configured as another 15 type; And the 27th kitchen is used to display the cooling unit pipe at a predetermined angle A diagram of an oblique example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE INVENTION The present invention will be described in more detail in conjunction with the drawings in which preferred embodiments of the present invention are shown, but the invention may be embodied in different forms and should not be limited to This proposed embodiment. Moreover, these embodiments are intended to be thorough and complete, and to fully convey the scope of the present invention to those of ordinary skill in the art. In the drawings, the thickness of the plurality of layers and the 16 1272121 region are exaggerated for clarity, and like numerals are used to denote like elements throughout the specification. [Embodiment 1] Fig. 1 is a view showing an example of a wet pretreatment device of the exhaust gas treating device of the present invention; and Fig. 2 is a view showing wet pretreatment of the exhaust gas treating device of the present invention Fig. 3 is a view showing another example of the wet pretreatment apparatus of the exhaust gas treating apparatus of the present invention; and Fig. 4 is a view showing that the removal efficiency of an ammonia gas can be obtained by The wet pretreatment unit reached an 80% chart. As shown in Fig. 1, the wet pretreatment apparatus 10 for performing the exhaust gas treatment of the present invention mainly comprises an exhaust gas inlet hole 11 through which the exhaust gas enters, and a reactant inlet hole 12 for the reactant for the exhaust gas treatment, The reaction portion 2 for wet-pretreating the exhaust gas may be subjected to a fluorine-containing 15 spinning method, a discharge hole 21 for discharging the wet-processed exhaust gas, and a discharge hole 31 for discharging the pollutant. The reaction portion 20 of the wet pretreatment apparatus of the present invention separates the solid particles contained in the gas 20 by the cyclone separation method using the centrifugal force generated by the fluid vortex. When the exhaust gas discharged during a semiconductor manufacturing process or an LCD manufacturing process is vortexed inside the wet pretreatment device by the cyclone separation method, the reactant is sprayed to remove water solubility in the exhaust gas. Substance or fine powder. The reaction portion 2 has an inner cylinder 19 and an outer cylinder 10a, and the outer cylinder i〇a has a cylindrical cylinder 17 and a pyramidal cylinder 18 extending downward from a lower end of the cylindrical cylinder 1272121 . According to this structure, the radius of the outer cylinder is reduced from the interface between the cylindrical cylinder 17 and the pyramidal cylinder 18 to the lower end of the outer cylinder 10a, and therefore, the outer cylinder has an inverted The overall structure of the bottle. The cylindrical barrel 17 is provided at its upper end with an outer-inner barrel connection 5 portion 17a, and the pyramidal tube 18 is provided at its lower end with a discharge hole 3''. In the past, 'the longer the total length of the outer cylinder is constituted by the cylindrical cylinder 17 and the pyramidal cylinder 18', the greater the possibility that the exhaust gas is in contact with the reactant, but it is still most appropriate to use a conventional one. A cyclone separator of the size is preferred. The overall structure of the inner cylinder 19 has a funnel shape, and this forms a neck 10 having a neck portion that maintains a certain radius, and the radius gradually decreases toward the direction from the upper end to the lower end of the inner same 19, and then Keep it from the neck to the lower end. The inner cylinder 19 is provided with a discharge hole 21' at its upper end and an inner-outer cylinder connecting portion 19a which is attached to the lower side and directly below the neck. The lower end of the inner cylinder 19 extends to the vicinity of the lower end of the cylindrical outer cylinder 'I5 because the width of the reactant is sprayed in the lower direction of the reaction portion 20 by a microfinishing nozzle 15 which will be described below. It is large, so it is necessary to prevent the last pre-spot exhaust gas from being discharged into the discharge hole 21; and contact with the reactant again. The outer-inner tube connecting portion 17a and the inner-outer tube speed connecting portion 19a are fixed to each other to connect the inner tube 19 and the outer tube 19 and the pyramidal tube 18 L〇a. When the outer cylinder 10a and the inner cylinder 19 are fixedly connected in consideration of the necessity of repairing the wet pretreatment apparatus due to powder plugging/removal, it is preferable to fix the joint by a jig or the like. Referring to the drawing, a portion of the inner cylinder 19 inserted into the reaction portion 20 is shown by a dashed line and the fixed connection portions of the portions are shown in a schematic manner to avoid the formation of the volts 18 1272121 1 too complicated. The cylindrical cylinder 17 has an exhaust gas inlet hole 11 installed in an outer wall thereof and accessible by exhaust gas discharged from a cvd main chamber, the exhaust gas inlet hole being installed to allow the exhaust gas to enter the direction of the cylindrical cylinder 17 Vertically hangs 5 straight. That is, the exhaust gases enter in the direction of all the lines of the outer wall of the cylindrical cylinder 17. The cylindrical barrel 17 also has a reactant inlet opening 12' mounted at the outer wall and is similar to the exhaust gases which enter the tangential direction of the outer wall of the cylindrical barrel 17. That is, the exhaust gas inlet port and the reactant inlet port 12 are installed such that the exhaust gas entering direction and the reactant entering direction 10 are similar to each other. Due to this configuration, the exhaust gas entering the direction perpendicular to the outer wall of the cylindrical cylinder 17 flows in a direction similar to each other and can be rotated in the cylindrical cylinder 17 and the pyramidal cylinder 18 Move down 'thus to maximize a cyclone separation effect. Since the entry of the reactant is completed above the incoming exhaust gas, the reactant inlet hole 12 is installed 15 above the exhaust gas inlet hole 11 to further increase the purification treatment efficiency of the exhaust gas. 0 Installed in the reactant inlet hole 12 The above is a microfinishing nozzle 15 for finely spraying the reactants, which increases the efficiency of exhaust gas treatment. The microfinishing nozzle 15 connecting the two injection holes uses a direct pressurization method, and the two 20 injection holes are a gas injection hole 13 and a reactant injection hole 14, respectively; a gas injection hole valve 13a and a reactant injection hole valve 14a is installed in front of each injection hole. The front end of the refining nozzle 15 passes through the reactant inlet port 12, and the atomized reactant 16 is finely sprayed into the reaction portion 2 to react with the helium exhaust gas. 19 1272121 A humidity reducing portion 23 is mounted above the discharge hole 21, and the discharge hole 21 is attached to the upper end of the inner tube 19 of the reaction portion 20. The inner cylinder 19 and the humidity reducing portion 23 of the reaction portion 20 are connected to the humidity reducing portion inlet hole 22 by fixedly connecting the discharge hole 21, and the humidity reducing portion inlet hole 22 is mounted 5 at the humidity reducing portion 23. Lower end. The discharge hole 21 and the humidity reducing portion inlet hole 22 are also similar to the outer cylinder i〇a and the inner cylinder 19, and are preferably fixedly connected by a heater or the like. The humidity reducing portion 23 is a cylindrical pipe structure connecting the discharge hole 21 and the exhaust gas treating device, and a heat insulating member 24 is mounted on the outer wall of the humidity reducing portion to uniformly heat the entire outer wall. Mounted on the humidity reducing portion 23 is a gas pressurizing device 25 for passing pressurized gas through the outer wall of the humidity reducing portion 23 into the humidity reducing portion 23. In this manner, preferably, the gas The pressurizing device 25 is installed at a position where the pressurized gas enters the humidity reducing portion 23 and reaches the inlet hole of the exhaust gas treating device, and the gas pressurizing device 25 has the gas 15 injection hole of the chlorine pressurizing device. 26 and a valve 26a connected thereto. Reference is made in this specification to the exhaust gas treatment device inlet port, the exhaust gas treatment device and the discharge cell not shown for a simple view. Further, in the wet pretreatment apparatus 1 used for the exhaust gas treatment of the present invention, a part and a tube structure which are in contact with the corrosive exhaust gas are preferably coated with a poly 2 conjugate, and coated with a TeflonTM. The fluororesin material is better. A method of wet pretreating exhaust gas using the wet pretreatment apparatus 10 of the present invention in accordance with Embodiment 1 will be described below. First, the exhaust gas generated in the manufacture of a semiconductor or an LCD or the like passes through the exhaust gas inlet hole 11 in the tangential direction of the outer wall of the cylindrical cylinder 17 to enter the wet pretreatment apparatus of the invention of the invention, and on the other hand, The reactant reacting with the exhaust gas entering the exhaust gas inlet hole 11 also enters the wet pretreatment device through the reactant inlet hole 12 installed at the outer wall of the cylindrical cylinder 17 in the tangential direction of the outer wall of the cylindrical cylinder 17. 1〇. As described above, in the present invention, 5 the reactant enters in a direction similar to the flow of the exhaust gas, and the reactant used in the wet pretreatment apparatus used for the exhaust gas treatment of the present invention may comprise as usual Diluted solution of chemical substances such as neutral water, tap water, NaOH or CaOH2 and electrolyzed water. Further, the reactant is introduced into the micronizing nozzle 15 through the reactant injection hole 14, and in this case, the flow rate of the neutral water generally ranges from about 10 to 300 cc/min, preferably from about 200 to about 2,000 Å. Better between 300cc/min. As described above, since the preferred flow rate of the general neutral water used as the reactant does not exceed 300 cc/min, the wet pretreatment apparatus 10 of the present invention can increase the exhaust gas treatment efficiency and minimize the waste water discharge. Therefore, the wet pretreatment apparatus of the present invention is environmentally friendly and can greatly reduce the amount of reactants used to reduce the cost of semiconductors or LCDs. Hereinafter, the present invention will explain the case when the general water is used as the reactant. As described above, the wet pretreatment apparatus 1 of the present invention uses the micro-nozzle 15 of the direct press method as a fine spray atomizer to increase the treatment efficiency of the exhaust gas. The reactants reacted with the exhaust gases meet the finely sprayed gas at the micro-twisting nozzle 15 and can be injected into the reaction portion 20 through the reactant inlet holes 12, in fact, when used in the general When the water is used as the reactant, the fine refining nozzle 15 ejects the general neutral water with a fine spray gas having a particle size of 50 μm or less, and is compared with a conventional method of a particle size of 5〇〇|11111. This particle size value is less than about 1 其. Since the treatment efficiency of the exhaust gas in the wet pretreatment apparatus at 1272121 is mainly determined by the contact area between the exhaust gas and the reactant and the temperature of the reactant, when the reactant is in fine droplets When it is injected and reacted with the exhaust gases, the treatment efficiency of the exhaust gases increases for the following reasons. First, the overall surface area of the micro-sprayed atomized reactant is increased, so that the likelihood of contact with the specialized exhaust gas and the area of contact increases as it increases. Secondly, the fine spray atomization process of the reactants by the micronizing nozzle can be regarded as a pseudo-adiabatic expansion process, and therefore, the temperature of the reactants will be sprayed and atomized in the process of finely spraying the reactants. It will be lowered to increase the solubility of the reactants of the water-soluble substance to be treated. Generally, the lower the temperature, the higher the solubility of the gas to the liquid phase. Nitrogen gas enters the micronizing nozzle 15 through the gas injection hole 13, and at this time, the flow rate of nitrogen gas is preferably in the range of about 5 to 201 pm, and more preferably in the range of about 10 to 201 pm. I5 The flow rate of the reactant and the nitrogen gas is adjusted by the gas injection hole valve 13a and the liquid injection hole valve 14a installed in front of each hole, and the reactant to be mixed with the nitrogen gas is passed through the micronization nozzle The pressure is applied to form a fine droplet 16 which is to be injected into the reaction portion 20 through the reactant inlet hole 12 in a circular mist shape. 2. As previously described, the wet pretreatment apparatus 10 utilizes cyclone separation to wet pretreat the exhaust gases, and the reactants entering the pores 12 through the reactants are rotated similarly to the exhaust gases and along The cylindrical barrel 17 and the inner wall of the pyramidal cylinder 18 are moved downward; at this time, the rotational speed at the pyramidal can is increased to obtain the maximum separation effect' and the fineness in the exhaust gas 22 1272121 5 10 15 20 , the end is collected by centrifugal force and gravity and collected in the pyramidal crucible. The water-soluble gas system in the special exhaust gas is dissolved in the reactant and can be contained in the reactant. Next, it is separated by centrifugal force and force and collected at the lowermost end of the pyramidal cylinder 18. As the reactants rotate and react with each other within the crucible tube 7 and the pyramidal cylinder 18, the contact time of the exhaust gases with the reactants increases 'and the reactants The pure flowing materials are flowed in a similar direction to maximize the cyclone separation effect. The pretreatment apparatus of the present invention using the cyclone separation method has the following gamma as compared with the prior art spray tower method (U.S. Patent No. 5,955,03:) and the thin waist tube method patent No. 5,649,985. Compared with the sprinkler tower method, the hairline Wei County has a pure treatment efficiency. In the wet pretreatment apparatus disclosed in the method of the money bank of the '37 patent towel, 'the flow of the exhaust gas and the flow of the reactants are not mutually similar directions' a this is compared with the separation method, When the contact between the exhaust gas and the water particles is short, the correction will reduce the treatment efficiency of the exhaust gas. In addition, if it is disclosed in the pre-treatment device of the 985 special-purpose thin waist tube method, the flow of the exhaust gas and the flow of the reactants are in a similar direction to each other, and The filament is pressurized at a high speed, which is compared with the cyclone separation method of the present invention. The milk device has high waste enthalpy treatment efficiency, and (4) the shortcoming of the thin waist tube method is that the pressure drop is very large. In the past, it has been known that the fine waist material level is about 1 times the pressure drop of the large tidal tower. Conversely, the wet type financial device of the present invention can produce a hurricane separation method that is smaller than the pressure drop. "An additional 23 1272121 exhaust fan must be installed to address the pressure drop as in the f985 patent. The contaminant in which the reactants and sludge deposits of the fine powder and the water-soluble gas which have been separated and collected are dissolved are stored in the storage tank (not shown) through the discharge hole 31, and conversely, The fine powder which has been removed from the water-soluble gas 5 and which has been subjected to wet pretreatment in the reaction portion 20 and the exhaust gas are formed at the center of the reaction portion 20 and are movable along the inner cylinder 19 through the discharge hole 21 Rotate the airflow upwards. The wet pretreatment gas discharged to the discharge hole 21 passes through the humidity reducing portion 23 to which the heat insulating member 24 is mounted and can enter the hole treating device through the exhaust gas treatment device, and at this time, the wet pretreatment The gas contains a large amount of atomized reactants and vapor. Therefore, the purpose of the humidity reducing portion 23 is to prevent the entire life of the exhaust gas treating device from being in the exhaust gas treating device when a gas containing a large amount of fine droplets or vapor passes through the discharge hole 21 and directly enters the exhaust gas treating device. The corrosion of the heating unit such as I5 is reduced. First, the humidity of the pretreatment gas is reduced in the humidity reducing portion 23 by the effect of gravity, that is, the exhaust gas containing a large amount of droplets discharged to the discharge hole 21 does not pass through the humidity reducing portion 23 due to its gravity. And can be withdrawn at the lowest end of the pyramidal cylinder 18 and discharged to the discharge hole 31 again. Another reason for the decrease in humidity is the low humidity of the gases. Due to the low humidity, a low-humidity gas can be injected to the humidity reducing unit 23 via the gas pressurizing device 25 installed at the humidity reducing portion 23. To reduce the humidity of the pretreatment exhaust gases. The low-humidity gas is injected into the humidity reducing portion 23 via the gas pressurizing means, and the low-humidity gas injected can be adjusted by the flow rate of the valve 26a. At this time, the low-humidity gas is preferably such that the 1272121 is made of mouse gas or processed dry air, and the heated nitrogen gas is more preferable. In addition to the foregoing purposes, the gas pressurizing device 25 installed at the humidity reducing portion 23 can be used for another purpose. When the wet pretreatment waste gas enters the salty exhaust gas treatment device, the exhaust gas reacts with oxygen which may be present in the exhaust gas treatment device at the inlet port of the exhaust gas treatment device to produce the powder, thus causing powder clogging. Therefore, if the pressurized gas in the gas pressurizing means 25 can be sprayed toward the inlet port of the exhaust gas treating means to remove the powder, powder clogging at the inlet port of the exhaust gas treating means can be prevented. In order to achieve the above two objectives, the gas pressurizing means 25 in the humidity reducing portion 23 10 is preferably installed such that the pressurized gas is ejected toward the inlet hole of the exhaust gas treating device. At this time, it is preferable that the pressurized gas system uses nitrogen gas or processed dry air in a manner similar to the low humidity gas for lowering the humidity, and it is more preferable to use heated nitrogen gas. The heat insulating member 24 is installed to prevent the pretreatment exhaust gas from being deposited on the pipeline structure or the like when moving to the exhaust gas treating device, because the pretreatment exhaust gas has high humidity, and the exhaust gas is deposited On a relatively low temperature piping structure or the like, and thus causing powder clogging. The heat insulating member 24 is preferably maintained in the range of about 50 ° C to 200 ° C, and more preferably in the range of about 100 ° C to 150 °. Fig. 2 is a view showing the structure of the wet pretreatment apparatus 30 in another example, except that the reaction unit 20 has the cyclone separation effect, and its structure is completely the same as that of the wet pretreatment apparatus 1 of Fig. 1. Although the outer tube of the reaction portion 20 of the wet pretreatment device 10 of Fig. 1 has the cylindrical tube 17 and the pyramidal tube 18, the reaction portion 20 of the wet pretreatment device 3 of Fig. 2 1272121 The outer cylinder 10a has only the cylindrical cylinder 17. The reaction portion 20 having the outer cylinder 10a formed only by the cylindrical cylinder 17 cannot obtain the maximum separation effect because the rotational speed of the exhaust gas at the pyramidal cylinder is increased. Therefore, although the wet pretreatment apparatus 30 of Fig. 2 has the effect of reducing the cyclone separation effect 5 and reducing the pretreatment effect of the exhaust gases, the manufacturing cost of the wet pretreatment apparatus can be reduced. When considering the optimum size of the cyclone to obtain maximum exhaust gas treatment efficiency, the manufacturing cost of the cylindrical cylinder and the pyramidal cylinder is higher than the manufacturing cost of only the cylindrical cylinder, and finally, the wet pretreatment device is reduced. The manufacturing cost will have the effect of reducing the manufacturing cost of semiconductors or LCDs. Fig. 3 is a view showing a double wet pretreatment apparatus 40' for treating exhaust gas according to another embodiment of the present invention, wherein the duplex means that the wet pretreatment apparatus 1 is composed of at least two exhaust gas treating apparatuses. Figure 3 shows a structure consisting of three wet pretreatment devices 10 wherein each wet pretreatment device is identical I5. In Fig. 3, the main components are numbered only on a wet pretreatment apparatus for the purpose of simplification, in which the gas injection holes 13 and the reactant injection holes 14 are omitted and combined with the fine The valves 13a and 14a are connected to the nozzle 15. Further, similar to the wet pretreatment apparatus of Fig. 2, it is permissible that only the wet pretreatment apparatus 1 having the cylindrical cylinder 17 is outside the casing, in this case, The multiple wet pretreatment apparatus can reduce manufacturing costs as previously described. Referring to FIG. 3, the multi-stage wet pretreatment apparatus 40 for exhaust gas treatment of the present invention has a pre-storage tank 32 which is formed in a circular shape and is installed in front of the storage tank. The discharge hole 31 is fixedly connected to the upper end of the connection pipe 39. The connecting tube enters the 26 1272121 hole 39a'. Therefore, each wet pretreatment device is connected to the pre-storage tank η. The water level holder 33' for maintaining the water level of the general neutral water stored in the pre-storage tank 32 at a predetermined water level and the water level holder as described below. 33 is composed of a conventional pipe member 5. The water level holder 33 must preferably be mounted above the upper end of the pre-sink because its mounting position is very important. The preferred configuration of the official member of the water level holder is as shown in FIG. 3, and the tubes extend upwardly from one side of the pre-storage tank 32 to a discharge hole 31 and the pre-storage chamber The intervening water level maintains line 34 and extends horizontally with the pre-storage tank 32 so that the ring 10 extends downwardly about the pre-shot finger and can enter the sump. The lower end of the pre-storage tank 32 is connected to a discharge pipe member 41 extending through a valve 37, and the valve 37 is connected to a piping structure extending downward from the water level holder 33 to form a duct shape. These piping structures for connecting the pre-storage tank 32 to the sump are preferably as straight as possible to prevent powder clogging. Mounted on the pre-storage 15 tank 32 is a cover for sealing the pre-storage tank 32 at its right/left side, and is disposed at a side where the cover body 38 is mounted to pass through the cover body 38. And a pre-sump pressurizer 36 for the pre-storage tank 32. The reason for pretreating the exhaust gases by the dual wet pretreatment apparatus 40 of the present invention is that the main chamber of the semiconductor or LCD manufacturing apparatus is mainly composed of a plurality of chambers 20. Since it is necessary to continuously deposit various substances required in the semiconductor or process, it is necessary to use a plurality of chambers connected to the CVD chamber. Different chambers are used in each chamber containing most of the chambers because different substances are deposited in each chamber. Therefore, a wet pretreatment apparatus corresponding to each chamber is necessary to reduce the risk of explosion or powder clogging due to an unpredictable reaction between the wastes of the 1272121 gas when the various exhaust gases discharged from the respective chambers are treated together. possibility. Finally, the number of such main chambers determines the number of wet pretreatment devices in the multiple wet pretreatment apparatus. Hereinafter, a method of pretreating exhaust gas by wet type 5 using the dual wet pretreatment apparatus 40 of the present invention will be described. The exhaust gas discharged from each CVD chamber is pretreated by a wet pretreatment apparatus installed in each CVD chamber, and Similarly to the description of Fig. 1, the pretreated exhaust gas discharged to the discharge port 21 enters the wet pretreatment device via the humidity reducing portion 23. Therefore, the treatment of the substances produced by the wet-pretreatment of the contaminants, i.e., the wet pretreatment, will be described below. The purpose of installing the pre-storage tank 32 is to effectively remove the powder discharged from the wet pretreatment apparatus. When the pre-storage tank 32 is generally absent as the wet pretreatment apparatuses 10 and 20 of the first and second drawings, the powdery pollutant discharged to the discharge hole 31 may be due to the discharge hole 31 The structure of the tube I5 of the storage tank is not straight to the storage tank because of a straight line or the like, so that it cannot be removed by the release of the ground, so that powder clogging may occur. Therefore, the foregoing problem is solved by the fact that the pre-storage tank 32 is installed in front of the sump to effectively discharge the powder discharged from the rake pretreatment apparatus. - The method of removing the powder from the pre-storage tank 32 is as follows. The pre-storage tank 32 mainly stores the contaminations. The powder 35 of the dyeable material is accumulated at the bottom of the rhyme 32 by the density difference (4) from the general neutral water. The gas pressurized in the pre-storage pressurizer 36 at a predetermined position of the wire (4) of the wire tray 32 is sprayed toward the inside of the pre-storage tank 1272121 32 to uniformly distribute the powder by the continuous (four) reliance setting 40. A powder mixed in the normal neutral water. The pre-sump pressurizer 36 uses nitrogen or cleaned dry air as pressurized air, and the general neutral water can be used in place of the gases. When the valve 37 in combination with the pre-storage tank 32 is opened, the powder will be moved by the pre-5 tank 3 and the generally neutral water through the discharge tube structure 41 to the tank 'because the powder is intended to be moved to the tank The normal neutral water is uniformly mixed, so that the powder can be removed more efficiently than when the pre-storage tank 32 is not installed. When the powder in the pre-storage tank 3 2 is removed by periodic gas injection and valve opening, the dual wet pretreatment apparatus 4 of the present invention can be easily maintained and repaired. The powder deposited in the pre-storage tank 32 can be periodically removed by opening the lids 38. 15 20 The water level of the general neutral water stored in the pre-shooting tank 32 is preferably maintained at the water level maintaining line % corresponding to the third figure, and is discharged to the dual wet pretreatment device 40. In the paste female 32, so that the water level gradually rises; when the water level rises _ water turns to hide, the water that exceeds the neutral water of the water level retaining line will use the water level retainer to move to the storage tank, so that - Straighten the pre-storage tank with water level _. ^ The groove 32 is preferably in a state of being fully charged when the double wet pre-station 40 of the present invention is operated to prevent the exhaust gas from coming into contact with the neutral water, for the reason that the pre-storage tank 32 is charged. There will be no simplification _ danger and powder clogging charge; the aforementioned wet pretreatment device has the following: First, the effect is achieved at 29 1272121 5 15 before the semiconductor or LCD is used to destroy the mountain exhaust gas. Only about 2% of the water-soluble gas enters the waste disposal device because the amount of the miscellaneous gas contained in the exhaust gas can be reduced by about 8 G% using the wet pretreatment device. For example, about 80% of the helium gas or ammonia gas that is introduced into the CVD chamber can be purified in the CVD apparatus. Therefore, it is possible to restrict the F2 gas from entering the exhaust gas treating device to form a nitrogen compound to reduce the processing load of the exhaust gas of the exhaust gas treating device, and to prevent the discharge of corrosion and toxic substances. Fig. 4 is a view for showing the result of the treatment of ammonia gas in the wet pretreatment apparatus, and as an example showing the effect of the present invention, which shows that the initial ammonia concentration in the field is 5,794 ppmV, and the micronization is entered. When the gas in the nozzle is 疋 191 pmd, the ammonia concentration corresponds to the ammonia removal efficiency after passing through the field pretreatment device according to the flow rate of the microfinishing nozzle. Although the ammonia removal efficiency was not greatly affected by the general neutral water, when the flow rate became 30 〇 cc / min, the ammonia removal efficiency in the wet pretreatment apparatus became about 80%. Further, since the fine powder has been removed together with the water-soluble substances when the wet pretreatment apparatus is previously used, the problem of the exhaust gas treating apparatuses, i.e., powder clogging, can be substantially prevented. Secondly, when the wet pretreatment apparatus is used, the exhaust gas treatment load of the exhaust gas treatment apparatus is largely reduced as compared with the case where the wet pretreatment apparatus is not used. According to the result of FIG. 4, when the operation time is set to be the same as the exhaust gas treatment, the load of the exhaust gas treatment device is reduced by about 8%, and therefore, the service life of each part of the exhaust gas treatment device is extended to be extended. Time and thereby reduce A/S costs. In addition, the overall operating time of the exhaust gas treatment device is increased to reduce semiconductor or LCD manufacturing costs. 30 1272121 The third 'the wet pretreatment apparatus of the present invention has an effect of first removing corrosive gas, particularly fluorine gas discharged during the semiconductor or LCD manufacturing process, and therefore, effectively processing the semiconductor or LCD manufacturing process. The effect of cleaning a large amount of gas in the main CVD chamber is excellent. Therefore, the wet pretreatment apparatus of the present invention is surely used in the exhaust gas treating apparatus for treating the NF3 gas, and it is expected that the amount of the cleaning gas used as the main CVD chamber will increase greatly thereafter. [Embodiment 2] Fig. 5 is a view showing the structure of a wet pretreatment apparatus using a duplex wet pretreatment apparatus 40 for treating a plurality of waste gas in the above Fig. 3. As shown in Fig. 5, the exhaust gas treatment device includes a "wet pretreatment device"

氣單元120與一放流單元13〇。 15 該預纽單元40供由該半導體設備⑽未示)排出之廢 (以下說明)造成腐蝕的成份。 氣通過並且以類似於該等廢氣之供應方向之方向供應該水 溶性氣體溶劑’以達成溶解包含在該等廢氣中之水溶性氣 體的功能,且被用來先去除對該乾式處理單元%之各零件 洋而δ之’預處理導管61具有一 设備排出之廢氣之廢氣供應孔6ia,_ 一供應由該半導體製造 供應該水溶性氣體溶The gas unit 120 is connected to a discharge unit 13A. 15 The pre-button unit 40 is supplied with a waste (described below) which is discharged by the semiconductor device (10). The gas passes through and supplies the water-soluble gas solvent in a direction similar to the supply direction of the exhaust gases to achieve the function of dissolving the water-soluble gas contained in the exhaust gases, and is used to remove the dry processing unit% first. The pretreatment conduit 61 of each part of the ocean and δ has an exhaust gas supply hole 6ia of an exhaust gas discharged from the device, and a supply is supplied by the semiconductor to supply the water-soluble gas.

31 1272121 該預處理導管61係安裝有多數根,以供由多數丰導體 製造设備所排出之廢氣使用,且該溶劑萃取孔61d與一溶劑 儲存筒32連接以主要地儲存溶解有該等水溶性氣體之溶 劑0 5 該水溶性氣體溶劑係利用一般噴嘴或喷霧器來喷灑, 或以一蒸氣狀態來供應,且使用一如酸性水或鹼性水之電 : 解水,或CaOl·!與NaOH。 » 該乾式處理單元70具有一歧管72,且該歧管72具有一 用以連接一廢氣供應管71與一加熱室73之廢氣供應孔籲 10 72a,而該廢氣供應管71係用以供應由該溶劑萃取孔61d萃 取出來的廢氣,並且該加熱室73連接該歧管72之下端以加 熱該等廢氣至一預定溫度。 在此可了解的是該加熱室73具有由一内管與一外管構 成之形狀,且一電熱器安裝在該外管之外部。 I5 為了捕捉通過該加熱室73所產生之粉末且去除該等水 溶性氣體以防止該排氣管腐蝕或堵塞,其内部藉一側壁81a 隔成數個空間81b與81c之第一濕式處理單元8〇具有一形成 鲁 氣體進入/排出孔81d與81e之室81,一藉一馬達82可轉動地 安裝在該空間81b中之轉子83,一安裝在該空間81c處之噴 2〇射單元84,及一收容在該室中以將該轉子浸在一預定深度 中之溶劑86。^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ / 該側壁81a在其下部具有一用以供該溶劑86流動之通 · 孔 81af、^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ · 該轉子85係由兩層多孔質中空圓柱管85a所構成。· 32 1272121 此外,一填充物85b填充在該等圓柱管85a之間,且由 一鐵乳龍(Teflon)或可以改善水處理以增加氣體溶解度與 捕捉速度之材料所製成之網構件構成。 該第二濕式處理單元90包含多數與該第一濕式處理單 5 元80之氣體排出孔81e連接的導管91,一透過談導管91之蓋 體91a連接的溶劑供應管92,及一與該溶劑供應管92結合以 喷射該溶劑的喷射喷嘴93。 該冷卻單元100具有連接該乾式處理單元70與該第一 濕式處理單元80及使通過該乾式處理單元7〇排出之熱氣體 10 與粉末之溫度降低的功能,且包含一連接管1〇3,而該連接 管103與一冷卻水供應管1〇1連接,該冷卻水供應管1〇1具有 用以供該冷卻水進入以使該冷卻水通過該冷卻水供應孔 102流入該連接管1〇3,藉此冷卻通過該乾式處理單元70排 出之熱粉末與廢氣。 I5 該除濕單元110安裝在該第二濕式處理單元90與該排 氣單元12 0之間以達成去除包含在透過該第二濕式處理單 元90處理之經淨化之氣體中的水份。 該放流單元130係用以收集與粉末混合之溶劑以及透 過該第二濕式處理單元9〇去除的水份,而該粉末係已透過 20 該複式濕式預處理裝置40、該第一濕式處理單元80與該第 一濕式處理皁元90處理過者。該放流單元130包含一透過排 流管結構131、132與133之中介而與該複式濕式預處理裝置 40之溶劑儲存筒32、該第一濕式處理單元80之室81及該除 濕單元110連接的放流室135。且一排流泵136安裝在該放流 33 1272121 室135之一側以排出收容在該放流室135中之溶劑。 一冷卻水供應泵137與該冷卻單元100之冷卻水供應管 101連接以泵送收納在該放流室135中之溶劑,藉此使該冷 卻水循環。 5 如圖所示,該冷卻水供應管101與該放流室135連接以 供收納在該放流室135中之通過,且係與一水源供應器(圖 未示)連接以供應未使用之冷卻水。 該排流管結構133具有一用以將在該室81中之多餘溶 劑自動排出之自動閥(圖未示),以保持在該室81中之溶劑液 ίο位於一預定值,且在維修時開啟該等排流管結構133以達成 將收納在該室81中之溶劑排出之功能。 以下將說明包含前述者之本發明之一實施例之廢氣乾 -羞式處理裝置的操作理論與處理方法。 首先’在該等廢氣通過該廢氣供應孔61a而由該半導體 15衣w a又備(圖未不)進入該預處理導管“時,該水溶性氣體溶 d係透過形成在該預處理導管61_側處之水溶性氣體溶劑 t、應孔61b以與該廢氣供應方向相同之方向供應,以溶解包 含在該等廢氣中之水溶性氣體。 射㈣有水祕氣社糊進人該放流孔 31而 、充且該等未處理氣體係通過該廢氣萃取孔—而供 應至構^乾核科㈣之歧f η之純孔仏。 …所=應之廢氣在該加熱室73中逐漸加熱到一預定溫度 、成氧化條件,且該等廢氣與空氣產生化學反應並形成 具有極細顆粒形狀之粉末。 34 1272121 此時,在該乾式處理單元7〇之内部,該粉末係藉由一 附著在該加熱室73内部處之粉末去除單元(圖未示)來到 擦,以與該加熱室73之内壁分離。 通過該乾式處理單元70所產生之熱粉末與未處理廢氣 5 通過構成該冷卻單元100之連接管1〇3而可由供應至該連接 管103内部之冷卻水來冷卻,藉此可以粉末漿液狀態排出。 該粉末漿液係在含有未與該乾式處理單元7〇與該冷卻 單元100反應之未反應廢氣與粉末之狀態下供應至該空間 81b ’且該未反應廢氣與粉末係由在該空間gib中轉動之轉 1〇 子83捕捉且溶解。 即,該轉子83係以被浸在收容在該室81中一預定深度 之狀態來安裝以保持該轉子83在轉動操作連續進行時一直 以該溶劑濕潤的狀態;在此狀態下,該等廢氣與該粉末與 该轉子83揍觸,且該轉子捕捉該粉末,並且該等廢氣可輕 15 易地溶解。 該等未處理氣體與該粉末通過該轉子83進入該空間 81C,並且由通過該喷射單元84之噴出溶劑來溶解。 接著’該等未處理氣體與微細粉末再次通過構成該第 一濕式處理單元90之導管91並通過該嘴射單元84,而該等 20廢氣將溶解於由安裝在該導管91處之噴射喷嘴93射出之溶 Μ,並且该微細粉末以一安裝在該導管%中之過濾構件(圖 未示)來收集。 如前所述,最後透過該第二濕式處理單元9〇處理之氣 體在水分利用該除濕單元110去除後,經由該排氣單元120 1272121 排放至排氣管。 另一方面,儲存在該溶劑儲存筒32與該室si中之溶劑 通過該等排流管結構131與133排放至該放流室135,且當以 一水位偵測單元(圖未示)偵測到該水位時,收容在該放流室 5 I35中之溶劑藉由該排流泵136之操作而排放至該放流室 135之外部。 依據前述結構,包含用以在該等廢氣進入乾_濕式處理 單元之前藉由供給該水溶性氣體溶劑來溶解包含在該等廢 氣中之水溶性氣體之該預處理單元;而該乾·濕式處理單元 10 腐蝕或損耗使得使用壽命減短之問題得以解決,且該濕式 處理單元係構成為可增加該濕式處理效果,並且排氣管被 堵塞之問題得以解決。 [實施例3] 第6圖是用以顯示本發a月之用以去除包含在廢氣中之 液體成份之廢氣處理裝置的例子之結構圖; 第7圖是用以顯示本發明之用以去除包含在廢氣中之 液體成份之廢氣處理裝置的另一例子之結構圖; 第8圖是用以顯示本發明之一冷卻單元之實施例的圖; 第9-11圖是用以顯示本發明之冷卻單元之其他實施例 20 的圖; 第12圖是用以顯示本發明之液體分離/冷卻單元之實 施例; 第13與14圖是用以顯不本發明之液體分離/冷卻單元 之其他實施例;及 36 1272121 第15圖是用以顯示安裝有多數階段之液體分離/冷卻 單元的結構圖。 如第6圖所示,一加熱室220加熱由如研磨製程之半導 體製造過程所產生之如氫或氬等可燃廢氣,以轉變其化學 5 特性。 本發明之冷卻單元210與該加熱室220流體性地連通以 冷卻由該加熱室220所產生之經淨化之氣體並捕捉且凝結 出包含在該等經淨化之氣體中之液體成份。 部份地由該加熱室220所產生且在該冷卻單元中凝結 1〇 之液體成份係收集在一放流槽230中。 如前所述’排出業經捕捉且去徐之液體成份的經淨化 之氣體被以防止在該排氣導管與排氣管處凝結, 藉此防止 該排氣導管與排氣管腐兹。 第7圖是用以顯示本發明之另-例之廢氣處理裝置之 15 結構圖。 〆 加熱混合有·廢氣、該等惰性氣體^ 氣之混合_妓化學雜並錄雜與 」因為加熱由如氧化,'沈積與光製程等; 20 :戶:產生:廢乳會產生灰塵,因該 等。 ,仃水處理,㈣錢理去除; 能 ’因此在進行該等廢氣之水處理非"要的功 之接觸面積更大。本 、顧與該等廢氣 月之濕式預處理單元採用直接加壓 37 1272121 型霧化喷嘴以產生直徑在50μιη以下之水顆粒,使接觸面積 變大並大量減少使用量,例如,該廢水之排出量減少至每 分鐘數百cc 〇 該冷卻單元210係與該濕式處理單元240流體性地連通 5以冷卻由該濕式處理單元240所產生之經淨化之氣體,捕捉 並且凝結包含在該尊經淨化之氣體中之液體成份。 在該加熱室220中部份地產生之液體成份,在該濕式處 理單元240中與該等灰塵混合之液體成份與在該冷卻單元 中凝結之液體成份係收集在該放流槽23〇中。 10 以下將詳細說明在本發明中所採用之冷卻單元。 請參閱第8圖,該冷卻單元210包括一冷卻管212,該冷 卻管212係安裝成環繞該等管路結構並與該加熱室22〇或該 濕式處理單元240流體性地連通。 冷卻水在與一適當冷卻水供應裝置或一冷卻器等連接 15之冷卻管212中循環以供應冷卻水。 此外’如第9圖所示,該冷卻管212與一熱交換器215 連接以使冷卻水猶環通過該熱交換器至與冷卻槽(圖未示) 直接連接的另一冷卻管216。 請參閱第10圖,該冷卻單元210包括安裝在該管路結構 20之内側處且與該加熱室220或該濕式處理單元240流體性地 連通的冷卻管212 〇 在前述方法中,該冷卻管212與該冷卻槽直接連接以循 環冷卻水,或如第u圖所示,該冷卻管212與該熱交換器215 連接以循環冷卻水通過該熱交換器到達另一直接連接於冷 38 Π72121 卻槽(圖未示)之冷卻管216 〇 本發明之另一實施例之廢氣處理裝置包括一的液體分 離/冷卻卓元300,用以吸收由該濕式處理單元Μ。排出之經 淨化之氣體之流速,以分離包含在該等經淨化之氣體中之 5液體成份並冷卻該等經淨化之氣體以捕捉與凝結包含在該 等經淨化之氣體中之液體成份。 請參閱第12圖,本發明之實施例之液體分離/冷卻單元 300包括一旋風分離式液體分離器310,其中該等經淨化之 氣體由側面進入且排出至上方,及一冷卻模組,係安裝 1〇 在該液體刀離310中且包括一内官340與一外管320,該外 管320與内管為同軸以在該内管與該外管之間形成一密閉 空間330,且其中冷卻水循環通過該密閉空間33〇。 較佳地,該液體分離器310包含一具有大橫截面與大容 量之緩衝器,使該等氣體之流速降低,且較佳地具有一偏 I5 心入口’以得到該旋風分離效果以更有效率地淨化該等氣 體。 為了得到該旋風分離效果並降低氣體流速以去除包含 在該等氣體中之液體成份,將一錐形排流部316與一圓柱形 本體一體成型,與該加熱室220或該濕式處理單元240結合 2〇 以供該等氣體進入之進入孔312係形成在該本體之側壁 處,並且一排出孔314形成在該本體之上部而可與該内管 340之内侧流體性地連通。 請參閱第13圖,另一實施例之液體分離/冷卻單元300 包括一旋風分離型液體分離器310 ,其中該等經淨化之氣體 1272121 由一側面進入且排出至上方;及一冷卻模組,其中形成有 一蓋350 ’使得它與該液體分離器310之本體之外部整個表 面一致地分開以在其間形成一密閉空間355,且冷卻水彳盾環 通過該密閉空間355 〇 5 因此’由於該冷卻水冷卻該液體分離器31〇之整個表 面’故可增加冷卻面積,以更有效率地捕捉並凝結包含在 該等經淨化之氣體中之液體成份。 另一方面,藉由組合第12與13圖之各實施例,可以使 用雙管式結構之第一冷卻模組與第二冷卻模組之組合,而 10冷卻水在其間循環,且一蓋形成在該第二冷卻模組上,使 得它與該液體分離器之本體之外部整個表面一致地分開以 在其間形成一密閉空間,且冷卻水循環通過該密閉空間。 請參閱第14圖,其中顯示另一實施例之液體分離/冷卻 單元。 15 在這實施例中,該等經淨化之氣體由該旋風分離式液 體分離器310進入且排放至上方;該冷卻單元包含一本體 250,一用以供應加壓空氣至該本體之加壓空氣導管253, 一包括一用以排出熱空氣之熱空氣排出管255與一用以排 出冷卻空氣之冷卻空氣排出管256之渦旋管251,及一安裝 20 在該液體分離器310中且其一端與該渦旋管之冷卻空氣排 出管256流體性地連通並且另一端為開口之冷卻盤管240。 請參閱第15圖,該液體分離/冷卻單元係安裝成具有多 數階段,且藉由在中間設置一如U形放泄彎管之放泄彎管 260而互相流體性地連通,藉此實際上增加通道長度。增加 40 1272121 通道長度具有可以在排放至該排氣導管之前捕捉更多液體 成份之優點。 以下將說明本發明之前述廢氣處理裝置。 首先,由於該等廢氣之種類與特性會因製造過程而互 5 相不同,該等廢氣供應至該加熱室220,與該等惰性氣體及 空氣或該等廢氣本身混合。該等廢氣可以在它先與該等惰 性氣體及空氣在歧管處混合後再供應至該加熱室,談加熱 室220加熱進入之廢氣以改變其化學特性。 依該等廢氣之種類之不同,由該加熱室220排出之氣體 10可包括或不包括如粉末之灰塵,如果包括灰塵,則該等氣 體會經由該濕式處理單元240與該冷卻單元21〇連接。 經過前述製程加工之氣體在該冷卻單元21〇處冷卻,因 此’可捕捉並凝結如包含在該等經淨化之氣體中之水份, 該等凝結之液體成份係收集在該放流槽23〇中。 15 如前所述’去除如包含在該等排出氣體中之水份的液 體成份可以防止該等管路結構或排氣導管等之腐蝕。 另一方面’依據本發明之另一實施例,該等經淨化之 氣體進入該液體分離/冷卻單元3〇〇,且包含在該等廢氣中 之大量液體成份由於流速降低而排流至下部。此外,以各 構成該液體分離器31〇之冷卻單元加工之氣體被冷卻,且 包含在内部中之液體成份被捕捉且凝結於該液體分離器 3l〇t 〇 $此外’利用該U形放泄彎管260實際上增加該經淨化之 ㈣之通道長度可增加水份之敵效率。 41 1272121 因此,排出至該排氣導管之排出氣體並未包括水份, 可防止該排氣導管與該等管路結構等之腐蝕。 如前所述,雖然本發明主要是說明有關該較佳實施 例,但是所屬技術領域中具有通常知識者可了解各種變化 5 例。 依據前述組成,其優點是該冷卻單元係安裝在該加熱 室或濕式預處理室之後端處以去除包含在由該加熱室或該 濕式處理單元排出之排氣如水份等液體成份,以防止該等 管路結構與該排氣導管之腐蝕。 10 此外,當由該加熱室產生之灰塵在該濕式處理單元中 加工時,其優點是該微細水顆粒係藉該霧化喷嘴喷灑以增 加灰塵收集效率,藉此可增加產生之廢水量。 此外,有效地捕捉包含在由安裝成多數階段之該等冷 卻單元加工之排氣中之如水份的液體成份具有大量排除在 15 最後排出之排氣中之水份的效果。 [實施例4] 第16圖是用以顯示本發明之廢氣乾式處理裝置之結構 的圖, 第17圖是第16圖之縱向橫截面圖;且 20 第18圖是一用以顯示本發明之廢氣乾式處理裝置之另 一加熱室之結構的圖。 如第16與17圖所示,本發明之一實施例之廢氣乾式處 理裝置包含一用以形成一預定處理空間之加熱室511,及一 安裝在該加熱室511之上侧且在其側部具有一廢氣供應孔 42 1272121 513a的歧管513。 該歧管513在其上侧具有多數垂直地安裝於該加熱室 511中之桿式加熱器515 ,及一在其中央部份處之用以測量 該加熱室511之溫度的溫度測量感應器517 5 該等桿式加熱器515與該溫度測量感應器517係構成可 利用一防止腐蝕單元520防止腐蝕… 該防止腐蝕單元520包含一用以包圍該等桿式加熱器 515與該溫度測量感應器517之管521,一用以將該管521固 定至該歧管513之上部之連接蓋523,及在該管521中流動之 10 防止腐蝕氣體525。 該連接蓋523具有上蓋與下蓋523a與523c ;該下蓋523c 具有一用以安裝於其中之固定該桿式加熱器515與該温度 測量感應器517之夾具518,且該廢氣供應孔513a具有用以 電氣連接該等桿式加熱器515與該溫度測量感應器517且由 I5其延伸出來的連接端子515a與517a,及一供給該等防止腐 蝕氣體525之氣體供應孔523a,。 該夾具518具有一通孔5i8a,該通孔518&可供通過該氣 體供應孔523a供給之防止腐餘氣體525進入該管521。 該防止腐钱氣體525可使用如N2、〇2、空氣、h2、He 20 等惰性氣體。 該管521係由具有高耐熱性與一高耐鍅性之陶£(如 Al2〇3或SiC)或金羼製成以具有多孔性,因此,在該管521 中流動之防止腐餘氣體525與該管521之外部流體性地連 通0 43 1272121 該加熱室511另設置有一與内壁分開之保護壁531,且 該等防止腐蝕氣體525供應至該加熱室511與該保護壁531 之間以防止該加熱室511之腐钱。 如圖所示,該保護壁531之下部可以形成為緊密地連接 5 至該加熱室511以堵塞通道,或與底部分開而開啟以便讓該 等防止腐蝕氣體525流至該加熱室511之内部。 該等防止腐蝕氣體525係以一預熱狀態供應為佳,以免 降低該等桿式加熱器515之熱值。 另一方面,當該等廢氣通過該廢氣供應孔5i3a供應 10時,該等廢氣之流速在該歧管513之上側處降低而容易於該 粉末黏著而產生一層較厚之粉末層,因此增加了該廢氣供 應管路結構堵塞之可能性。 為了解決這個問題,在該廢氣供應孔513a之上部處另 外安裝一用以週期性地供應一脈衝氣體之脈衝單元54〇,以 15 防止該粉末層產生或變厚。 該脈衝單元540包含一與其設置該廢氣供應孔5丨仏之 上側連接之脈衝管541,如]^或空氣之脈衝氣體通過該脈衝 管541而週期性地供應,且一電氣操作電磁閥可調整供應時 間。 20 此外,該脈衝管541以具有以類似於該廢氣供應孔5 ][3a 之切線方向供應該等脈衝氣體之形狀為佳。 接著,第18圖是用以顯示該加熱室511之另一實施例之 圖,如圖所示,該加熱室511另設有一保護壁531,如第17 圖所示。該保護壁531具有形成在其外部之連接管532,以 44 1272121 供如贝2、空氣之等冷卻流體流動以防止該加熱室511過熱, 且一隔熱構件533插在該加熱室511與該保護壁531之間以 防止熱傳達至外部並有助於内部溫度上升。 依此方式,沿著該冷卻管532受熱之氣體可以該防止腐 5 蝕氣體525取代。 以下將說明該廢氣乾式處理裝置之操作原理。 首先,通過該歧管之廢氣供應孔513a而由半導體製造 設備(圖未示)排出之廢氣進入該加熱室511。 此時’該廢氣供應孔513a形成在該歧管513之側面以使 10該等廢氣產生渦旋,因此,進入該加熱室511之廢氣以渦旋 之方式排出,如第17圖所示。 當該等廢氣產生渦旋時,在該加熱室511中廢氣之停留 時間變長。 另一方面,在所供給之廢氣停留在該加熱室5丨1中時, 15該等廢氣由於該桿式加熱器515之加熱操作而受熱,並可轉 變成固態而在該廢氣處理裝置中被捕捉。 在該等廢氣如前所述地乾式熱處理時,氟氣體會在該 等桿式加熱器515之受熱條件下反應而腐蝕該等加熱室511 之桿式加熱器515。 20 這可以藉由將該管521安裝在該等桿式加熱器515外側 且將該防止腐蝕氣體525供應至該管521中來防止。 該防止腐蝕氣體525以預熱至一預定溫度以免降低該 等桿式加熱器515之熱值為佳。 當該防止腐#氣體525供應至該管中時,該等桿式加熱 45 1272121 器化主要是被該管521阻撞且次要地被以—預定流速供應 之防止腐餘氣體525阻擔。 料’該官521係作成具有多孔性以將該等防止腐钱氣 5等桿式加熱器515接觸而可被加熱以提高該加熱室511之溫 度。 即’藉由被當作一熱傳介質,供應至該管521之該尊防 止腐蝕氣體525具有阻擋、保護該等桿式加熱器515且不會 減少熱值之功能。 10 溫度測量感應器517亦可藉由前述原理來防止腐蝕。 另一方面,該加熱室511之内壁之腐蝕危險亦可藉由使 防止腐蝕氣體525在該加熱室51丨與該保護壁53丨之間流動 來解決。 該保濩壁531主要具有之阻止該加熱室μ 1與該等腐钱 I5性氣體之反應的功能。當該保護壁531由於連續使用而被腐 蝕產生多數孔時,在該保護壁531該加熱室511之間流動之 該防止腐蝕氣體525之流動或壓力可防止該等廢氣與該加 熱室Ml直接接觸。 其次,在該等桿式加熱器515以電操作而以前述原理加 2〇熱時,流經環繞該保護壁531之冷卻管532之冷卻水防止該 加熱室511過熱。 此外,由該等桿式加熱器515所產生的熱係藉由插在該 加熱室511與該保護壁531之間的隔熱構件533來隔絕,以減 少熱損失並減少該保護壁之溫度上升時間。 46 1272121 以該加熱室之側方向供應該等廢氣以使該等廢氣產生 渦旋並供給至該加熱室的優點是可藉由增加該等廢氣之停 留時間而改善該等廢氣之處理效果。 另外,藉由使用用以保護該加熱室、安裝在該加熱室 5 中之加熱器與溫度測量感應器等之防止腐蝕單元來防止設 備損壞的優點是可藉由減少設備之錯誤來增加廢氣之處理 量0 [實施例5] 第19圖是顯示具有本發明之加熱室防止腐蝕裝置之廢 10 氣處理裝置之結構的圖; 第20圖是用以顧示具有另一實施例之加熱室防止腐蝕 裝置之廢氣處理裝置之結構的圖; 第21圖是用以顯示在考慮產生腐蝕之情形下,在第19 圖之結構中,藉由在内室中形成一假想孔來測量廢氣(CF4) 15 之濃度的圖;且 第22圖是有關依據第21圖之結構所供給之N2流量在該 加熱室與該内室之間之一任意位置處CF4濃度變化之測量 值的圖表。 如第19圖所示,該廢氣處理裝置具有一用以收納該等 20 廢氣之預定空間以處理由半導體製造過程設備所排出之廢 氣(如,用以清潔該化學蒸鍍設備之氟氣體:CF4、C2F6、 NF3等),並且設置有一具有孔411a與411b且其上與下端開 口之加熱室411,及一安裝在該加熱室411之周緣處而可被 加熱至一預定溫度以形成該等廢氣之處理條件。 1272121 一用以供應該等廢氣、空氣等進入該加熱室411之歧管 (圖未示)與該加熱室411之上側結合,且在該加熱室411中被 加熱至該預定溫度之廢氣與在該加熱室之下側處之混合氣 體反應以改變該等混合氣體並捕捉它們。 5 安裝在該加熱室41丨中的是一用以防止該加熱室411由 於該等廢氣與空氣及該熱條件反應所產生之腐蝕的屏蔽單 元 420 〇 該屏蔽單元420包括一安裝成與該加熱室411分開之内 室421,及在該加熱室411與該内室421之間流動之防止腐蝕 10 氣體423。 較佳地’該防止腐姓氣體係如凡、〇2、空氣、αγ、氏 等非腐蝕性氣體。 該内室421係形成在該加熱室411中,且該加熱室411之 一端與該内室421之一端利用一在相同直線上之環狀凸緣 15 構件425而互相結合。 該凸緣構件425在其一側具有一用以供應防止腐#氣 體423至該内室421與該加熱室411之間的氣體進入孔 425a ’且由該氣體進入孔425a供應之防止腐餘氣體423經過 形成在該加熱室411之下側處之孔411b而流出。 2〇 依據前述組成’該屏蔽單元420主要是防止該加熱室 411由於該等廢氣(例如,在化學蒸鍍或一擴散設備清潔過 裎中使用之如CF4、QF6、NF3等氟氣體)與該加熱器413之 處理條件之反應所產生之腐蝕。 即,該内室421主要具有阻止該加熱室411與該等氣體 48 1272121 之反應之功能。當該内室421因連續使用被腐钱而形成多數 ㈣’在_室421與該加熱室411之間流動之防止腐域 體423的流動錢力可防止該等廢氣直接接觸該加熱室 411 ° 5 接#,切等純連續流動時,該等廢氣之濃度會由 於該防止腐賴體423之稀釋效果而大幅降低,以防止加熱 室411受到嚴重的腐蝕。 依據刖述組成,相較於先前技術,該加熱室411之腐蝕 時間大大地延長,以再延伸預先維修時間,減少該加熱室 10 411之替換成本,且增加該加熱器413之使用壽命。 弟20圖是一用以顯示該屏蔽單元“ο之結構之另一實 施例,與第19圖相同之零件係以相同之標號表示,且省略 其說明。 與第19圖不同之結構係在與該凸緣構件425結合之該 15内室421之另一端處安裝一分隔構件427。 該分隔構件427使該防止腐蝕氣體423僅停留在該加熱 室411與該内室421之間,且該等防止腐蝕氣體423之供給與 抽出係通過形成在該凸緣構件425處之氣體進入/排出孔 425 a與425b來達成。 20 安裝在形成有該氣體排出孔425b之該凸緣構件425之 一側上的是一用以測量在該411與該内室421之間流動之防 止腐蝕氣體423之壓力的壓力計431,當用以開啟/關閉該通 道之閥單元433安裝在其一側且測量通過該壓力計431而供 應至該加熱室411與該内室421之間之防止腐蝕氣體的壓力 49 1272121 % ’該閥單元433開啟以打開該通道以釋出在該加熱室與該 内至421之間流動之防止腐钱氣體423,以保持某一壓力。 當该内室421或該加熱室41|由於產生腐蝕而具有一孔 時,因為在該加熱室411與該内室421之間流動之防止腐蝕 5氣體的壓力降會被壓力計431測量出來,故其腐蝕狀態可以 輕易地知道。 第21圖是顯示用以在考慮產生腐蝕之情形下,在第19 圖之結構中,藉由在内室421中形成一假想孔421&來測量廢 氣(CF4)之結構的圖。 1〇 如圖中所示,該加熱室之長度,在該内室421 之外周緣與該加熱室411之内周緣之間的距離t*2mm,且 該加熱室411與該内室421具有圓柱形之形狀。 此外’该假想孔421a係選定在腐姓最容易發生的地 方’其直徑d互相不同(如2〇mm或4〇mn^),且一 Cf4濃度_ 15測量位置與該假想孔421a之中心分開一預定距離(L: 40mm) ° 第22圖是一有關依據第21圖之結構所供給之流量在 該加熱室411與該内室421之間之一任意位置處(A位置:在 該假想孔421a之稍微下方)CF4濃度變化之測量值的圖表。 20 在第22圖中,x軸表示氮供應量之值[SLM(每分鐘標準 升)]’ y軸表示CF4濃度值[ppmv],△線表示其大小為直徑 40mm之假想孔421&之測量值,且□線表示其大小為直徑 20mm之假想孔421a之測量值。 由圖可知,該CF*濃度與所供應之乂量成正比地明顯減 50 1272121 少,當該假想孔421a之尺寸為20mm時,濃度在氮量7升/分 鐘之點處為0 ,而當該假想孔421a之尺寸為40mm時,濃度 在氮¥〇升/分,之點處為0。 有1前述結果之條件如下:CF4是0.5[SLM],空氣是 5 200[SLM],且該加熱器413之加熱溫度是700°(:。 該CF4之濃度值可藉由FTIR(傅立葉轉換遠紅外線 (Fourier Transform Infra_Red))光譜測量法來測量。 如前所述,藉由在該加熱室中安裝該屏蔽單元來輕易 地防止由該等廢氣造成之加熱室之腐蝕可以延長該裳置之 10 使用壽命與預先維修時間。 此外,該加熱室之替換成本可以明顯地減少,且可防 止由於該加熱室之腐蝕而產生之加熱器腐蝕以延長該加熱 器之使用壽命。 以…、 [實施例6] 15 20 第23圖是顯林發明之—實關之廢氣處理裝置之一 部份的圖; 第24圖疋第23圖之B-B,之橫截面圖; 第25A圖顯示其中-脈衝單㈣合在第24圖之冷卻水 收納槽之結構的圖;\ 圖是顯示其中—脈衝單元結合在第24圖之冷卻 水供應管之結構的圖; 應單元係構成為另 第26圖是用以顯示第23圖之氣體供 一種塑憑之例子的圖;及 一預定角度傾31 1272121 The pretreatment conduit 61 is provided with a plurality of roots for use by the exhaust gas discharged from the majority of the conductor manufacturing equipment, and the solvent extraction hole 61d is connected to a solvent storage cylinder 32 to mainly store and dissolve the water soluble solution. Solvent for a gaseous gas 0 5 The water-soluble gas solvent is sprayed by a general nozzle or a sprayer, or supplied in a vapor state, and uses electricity such as acidic water or alkaline water: water, or CaOl· ! with NaOH. The dry processing unit 70 has a manifold 72, and the manifold 72 has an exhaust gas supply port 107a for connecting an exhaust gas supply pipe 71 and a heating chamber 73, and the exhaust gas supply pipe 71 is for supplying The exhaust gas extracted from the solvent extraction hole 61d is extracted, and the heating chamber 73 is connected to the lower end of the manifold 72 to heat the exhaust gas to a predetermined temperature. It can be understood here that the heating chamber 73 has a shape composed of an inner tube and an outer tube, and an electric heater is mounted outside the outer tube. I5 In order to capture the powder generated by the heating chamber 73 and remove the water-soluble gas to prevent corrosion or clogging of the exhaust pipe, the first wet processing unit 8 is partitioned into a plurality of spaces 81b and 81c by a side wall 81a. The crucible has a chamber 81 forming a gas inlet/discharge port 81d and 81e, a rotor 83 rotatably mounted in the space 81b by a motor 82, and a jetting unit 84 mounted at the space 81c. And a solvent 86 housed in the chamber to immerse the rotor in a predetermined depth. ^^^^^^^^^^^^^^^^^^^^^^^^ The side wall 81a has a hole 81af, ^ ^ ^ ^ in the lower portion for the solvent 86 to flow. ^ ^ ^ ^ ^ ^ ^ ^ · The rotor 85 is composed of two porous hollow cylindrical tubes 85a. 32 1272121 In addition, a filler 85b is filled between the cylindrical tubes 85a and is composed of a mesh member made of Teflon or a material which can improve water treatment to increase gas solubility and capture speed. The second wet processing unit 90 includes a plurality of conduits 91 connected to the gas discharge holes 81e of the first wet processing unit 5, 80, a solvent supply tube 92 connected to the cover 91a of the conduit 91, and a The solvent supply pipe 92 is combined to spray the nozzle 93 of the solvent. The cooling unit 100 has a function of connecting the dry processing unit 70 and the first wet processing unit 80 and lowering the temperature of the hot gas 10 and the powder discharged through the dry processing unit 7 , and includes a connecting pipe 1 〇 3, The connecting pipe 103 is connected to a cooling water supply pipe 1〇1 for allowing the cooling water to enter so that the cooling water flows into the connecting pipe through the cooling water supply hole 102. 3, thereby cooling the hot powder and the exhaust gas discharged through the dry processing unit 70. I5 The dehumidifying unit 110 is installed between the second wet processing unit 90 and the exhaust unit 120 to achieve removal of moisture contained in the purified gas processed through the second wet processing unit 90. The discharge unit 130 is configured to collect the solvent mixed with the powder and the moisture removed by the second wet processing unit 9 , and the powder has passed through the double wet pretreatment device 40 , the first wet type The processing unit 80 is treated with the first wet treated soap unit 90. The discharge unit 130 includes a solvent storage cylinder 32, a chamber 81 of the first wet processing unit 80, and the dehumidification unit 110, which are interposed by the drainage tube structures 131, 132 and 133. Connected discharge chamber 135. And a drain pump 136 is mounted on one side of the discharge chamber 33 1272121 chamber 135 to discharge the solvent contained in the discharge chamber 135. A cooling water supply pump 137 is connected to the cooling water supply pipe 101 of the cooling unit 100 to pump the solvent contained in the discharge chamber 135, thereby circulating the cooling water. As shown, the cooling water supply pipe 101 is connected to the discharge chamber 135 for accommodation in the discharge chamber 135, and is connected to a water supply (not shown) to supply unused cooling water. . The drain tube structure 133 has an automatic valve (not shown) for automatically discharging excess solvent in the chamber 81 to maintain the solvent liquid in the chamber 81 at a predetermined value and during maintenance. These drain tube structures 133 are opened to achieve the function of discharging the solvent contained in the chamber 81. The operation theory and processing method of the exhaust gas dry-shake processing apparatus according to an embodiment of the present invention described above will be explained below. First, when the exhaust gas passes through the exhaust gas supply hole 61a and the semiconductor device 15 is ready (not shown), the water-soluble gas is diffused through the pretreatment conduit 61_. The water-soluble gas solvent t at the side and the hole 61b are supplied in the same direction as the supply direction of the exhaust gas to dissolve the water-soluble gas contained in the exhaust gas. (4) There is a water secret gas paste into the discharge hole 31 And the untreated gas system is supplied to the pure pores of the structure of the dry matter (4) through the exhaust gas extraction hole. The exhaust gas is gradually heated to one in the heating chamber 73. Predetermined temperature, oxidizing conditions, and the exhaust gases chemically react with air to form a powder having an extremely fine particle shape. 34 1272121 At this time, inside the dry processing unit 7〇, the powder is attached to the heating by a A powder removing unit (not shown) inside the chamber 73 comes to the rub to separate from the inner wall of the heating chamber 73. The hot powder and the untreated exhaust gas 5 generated by the dry processing unit 70 pass through the cooling unit 100. connection 1〇3 may be cooled by cooling water supplied to the inside of the connecting pipe 103, whereby it may be discharged in a powder slurry state. The powder slurry is contained in unreacted exhaust gas containing no reaction with the dry processing unit 7 and the cooling unit 100. The space is supplied to the space 81b' with the powder, and the unreacted exhaust gas and powder are captured and dissolved by the rotary scorpion 83 rotating in the space gib. That is, the rotor 83 is immersed in the chamber. a state of a predetermined depth in 81 is installed to maintain the state in which the rotor 83 is wetted by the solvent while the rotating operation is continuously performed; in this state, the exhaust gas and the powder are in contact with the rotor 83, and the rotor captures The powder, and the exhaust gases are readily soluble. The untreated gas and the powder enter the space 81C through the rotor 83, and are dissolved by the solvent ejected by the spraying unit 84. Then 'these are untreated The gas and the fine powder pass again through the conduit 91 constituting the first wet processing unit 90 and through the nozzle firing unit 84, and the 20 exhaust gases are dissolved in the spray installed at the conduit 91 The nozzle 93 emits a solvent, and the fine powder is collected by a filter member (not shown) installed in the conduit %. As described above, the gas finally processed through the second wet processing unit 9 is After the moisture is removed by the dehumidifying unit 110, it is discharged to the exhaust pipe via the exhaust unit 120 1272121. On the other hand, the solvent stored in the solvent storage cylinder 32 and the chamber si passes through the drainage tube structures 131 and 133. Discharge to the discharge chamber 135, and when the water level is detected by a water level detecting unit (not shown), the solvent contained in the discharge chamber 5 I35 is discharged to the solvent by the operation of the drain pump 136 The outside of the discharge chamber 135. According to the foregoing structure, the pretreatment unit for dissolving the water-soluble gas contained in the exhaust gas by supplying the water-soluble gas solvent before the exhaust gas enters the dry-wet treatment unit The dry or wet processing unit 10 is corroded or worn to solve the problem of shortening the service life, and the wet processing unit is configured to increase the wet processing effect and the exhaust pipe is blocked. Can be solved. [Embodiment 3] Fig. 6 is a structural view showing an example of an exhaust gas treating device for removing liquid components contained in exhaust gas in the month of the present invention; Fig. 7 is a view for showing the present invention for removing A structural view of another example of an exhaust gas treatment device containing a liquid component in an exhaust gas; Fig. 8 is a view for showing an embodiment of a cooling unit of the present invention; and Figs. 9-11 are for showing the present invention Figure 20 is a diagram showing another embodiment of the liquid separation/cooling unit of the present invention; Figures 13 and 14 are diagrams showing other embodiments of the liquid separation/cooling unit of the present invention. Example; and 36 1272121 Figure 15 is a block diagram showing the liquid separation/cooling unit installed with most stages. As shown in Fig. 6, a heating chamber 220 heats a combustible exhaust gas such as hydrogen or argon produced by a semiconductor manufacturing process such as a polishing process to convert its chemical characteristics. The cooling unit 210 of the present invention is in fluid communication with the heating chamber 220 to cool the purified gas produced by the heating chamber 220 and to capture and condense the liquid components contained in the purified gases. The liquid component partially generated by the heating chamber 220 and condensed in the cooling unit is collected in a discharge tank 230. As described above, the purified gas which has been trapped and removed from the liquid component is prevented from being condensed at the exhaust duct and the exhaust pipe, thereby preventing the exhaust duct and the exhaust pipe from being corroded. Fig. 7 is a view showing the structure of an exhaust gas treating apparatus of another embodiment of the present invention. 〆 Heating and mixing · Exhaust gas, mixing of such inert gases ^ 妓 妓 杂 并 录 录 」 」 因为 因为 因为 因为 因为 because of heating such as oxidation, 'deposition and light process, etc.; 20: household: production: waste milk will produce dust, because These are the same. , water treatment, (4) money removal; can therefore 'there is a greater contact area for the water treatment of these waste gases. The wet pretreatment unit of the present and the exhaust gas uses a direct pressure 37 1272121 atomizing nozzle to generate water particles having a diameter of 50 μm or less, thereby increasing the contact area and greatly reducing the amount of use, for example, the wastewater. The discharge amount is reduced to hundreds of cc per minute. The cooling unit 210 is in fluid communication with the wet processing unit 240 to cool the purified gas generated by the wet processing unit 240, and is captured and condensed therein. The liquid component of the purified gas. The liquid component partially generated in the heating chamber 220, and the liquid component mixed with the dust in the wet processing unit 240 and the liquid component condensed in the cooling unit are collected in the discharge tank 23'. 10 The cooling unit employed in the present invention will be described in detail below. Referring to Fig. 8, the cooling unit 210 includes a cooling tube 212 that is mounted to surround and be in fluid communication with the heating chamber 22 or the wet processing unit 240. The cooling water is circulated in a cooling pipe 212 connected to a suitable cooling water supply device or a cooler or the like to supply cooling water. Further, as shown in Fig. 9, the cooling pipe 212 is connected to a heat exchanger 215 to allow the cooling water to pass through the heat exchanger to another cooling pipe 216 directly connected to the cooling tank (not shown). Referring to FIG. 10, the cooling unit 210 includes a cooling tube 212 mounted at an inner side of the piping structure 20 and in fluid communication with the heating chamber 220 or the wet processing unit 240. In the foregoing method, the cooling The tube 212 is directly connected to the cooling tank to circulate cooling water, or as shown in Fig. u, the cooling tube 212 is connected to the heat exchanger 215 to circulate cooling water through the heat exchanger to another directly connected to the cold 38 Π 72121 The cooling tube 216 of the tank (not shown). The exhaust gas treating apparatus of another embodiment of the present invention includes a liquid separating/cooling element 300 for absorbing the wet processing unit. The flow rate of the purified gas is discharged to separate the liquid components contained in the purified gas and to cool the purified gas to capture and condense the liquid components contained in the purified gas. Referring to FIG. 12, the liquid separation/cooling unit 300 of the embodiment of the present invention includes a cyclonic liquid separator 310, wherein the purified gas enters from the side and is discharged to the upper side, and a cooling module. Mounting 1 in the liquid knife away from 310 and including a inner 340 and an outer tube 320, the outer tube 320 being coaxial with the inner tube to form a closed space 330 between the inner tube and the outer tube, and wherein The cooling water circulates through the closed space 33〇. Preferably, the liquid separator 310 comprises a buffer having a large cross section and a large capacity to reduce the flow rate of the gases, and preferably has a biased I5 core inlet to obtain the cyclone separation effect. Efficiently purify these gases. In order to obtain the cyclone separation effect and reduce the gas flow rate to remove the liquid components contained in the gases, a tapered drain portion 316 is integrally formed with a cylindrical body, and the heating chamber 220 or the wet processing unit 240 An inlet hole 312 that joins two turns for the gas to enter is formed at a side wall of the body, and a discharge hole 314 is formed at an upper portion of the body to be in fluid communication with an inner side of the inner tube 340. Referring to FIG. 13, the liquid separation/cooling unit 300 of another embodiment includes a cyclonic separation type liquid separator 310, wherein the purified gas 1272121 enters from one side and is discharged to the upper side; and a cooling module, A cover 350' is formed therein such that it is uniformly spaced apart from the entire outer surface of the body of the liquid separator 310 to form a closed space 355 therebetween, and the cooling water sill shield ring passes through the closed space 355 〇 5 thus The water cools the entire surface of the liquid separator 31 so that the cooling area can be increased to more efficiently capture and condense the liquid components contained in the purified gas. On the other hand, by combining the embodiments of the 12th and 13th embodiments, a combination of the first cooling module and the second cooling module of the double pipe structure can be used, and 10 cooling water circulates therebetween, and a cover is formed. The second cooling module is disposed such that it is uniformly spaced from the entire outer surface of the body of the liquid separator to form a closed space therebetween, and cooling water circulates through the closed space. Referring to Figure 14, there is shown a liquid separation/cooling unit of another embodiment. In this embodiment, the purified gas enters and is discharged to the top by the cyclonic liquid separator 310. The cooling unit includes a body 250 for supplying pressurized air to the body. The conduit 253 includes a hot air discharge pipe 255 for discharging hot air and a scroll pipe 251 for discharging the cooling air discharge pipe 256, and a mounting 20 in the liquid separator 310 and one end thereof. The cooling coil discharge pipe 256 is in fluid communication with the vortex tube and the other end is an open cooling coil 240. Referring to Figure 15, the liquid separation/cooling unit is installed in a plurality of stages and is in fluid communication with each other by providing a venting bend 260 such as a U-shaped bleed tube in the middle, thereby actually Increase the channel length. The addition of 40 1272121 channel length has the advantage of capturing more liquid components before being discharged to the exhaust duct. The aforementioned exhaust gas treatment device of the present invention will be described below. First, since the types and characteristics of the exhaust gases are different from each other due to the manufacturing process, the exhaust gases are supplied to the heating chamber 220 to be mixed with the inert gases and air or the exhaust gases themselves. The exhaust gases may be supplied to the heating chamber after it is first mixed with the inert gas and air at the manifold, and the heating chamber 220 is heated to enter the exhaust gas to change its chemical characteristics. Depending on the type of exhaust gas, the gas 10 discharged from the heating chamber 220 may or may not include dust such as powder, and if it includes dust, the gas may pass through the wet processing unit 240 and the cooling unit 21 connection. The gas processed by the foregoing process is cooled at the cooling unit 21, so that 'the water that is contained in the purified gas can be captured and condensed, and the condensed liquid components are collected in the discharge tank 23〇. . 15 The removal of liquid components such as water contained in the exhaust gases as described above can prevent corrosion of such piping structures or exhaust ducts and the like. According to another embodiment of the present invention, the purified gas enters the liquid separation/cooling unit 3, and a large amount of liquid components contained in the exhaust gases are discharged to the lower portion due to a decrease in flow rate. Further, the gas processed by each of the cooling units constituting the liquid separator 31 is cooled, and the liquid component contained in the inside is trapped and condensed in the liquid separator 3l 〇t 〇 $ in addition to the U-shaped discharge The curved tube 260 actually increases the length of the purified (four) channel to increase the efficiency of the enemy of the water. 41 1272121 Therefore, the exhaust gas discharged to the exhaust duct does not include moisture, and corrosion of the exhaust duct and the piping structure or the like can be prevented. As described above, although the present invention has been mainly described with respect to the preferred embodiment, those skilled in the art can understand various variations. According to the foregoing composition, there is an advantage that the cooling unit is installed at a rear end of the heating chamber or the wet pretreatment chamber to remove a liquid component contained in an exhaust gas such as moisture discharged from the heating chamber or the wet processing unit, The corrosion of the pipeline structure and the exhaust duct is prevented. Further, when dust generated by the heating chamber is processed in the wet processing unit, there is an advantage that the fine water particles are sprayed by the atomizing nozzle to increase dust collection efficiency, thereby increasing the amount of waste water generated . Further, it is effective to capture a liquid component such as moisture contained in the exhaust gas processed by the cooling units installed in most stages, and has a large amount of moisture excluding the water discharged from the finally discharged exhaust gas. [Embodiment 4] Fig. 16 is a view for showing the structure of the dry waste treatment apparatus of the present invention, and Fig. 17 is a longitudinal cross-sectional view of Fig. 16; and Fig. 18 is a view for showing the present invention. A diagram of the structure of another heating chamber of the exhaust gas dry processing apparatus. As shown in Figures 16 and 17, an exhaust dry processing apparatus according to an embodiment of the present invention includes a heating chamber 511 for forming a predetermined processing space, and a mounting portion on the upper side of the heating chamber 511 and on the side thereof. A manifold 513 having an exhaust gas supply port 42 1272121 513a. The manifold 513 has a plurality of rod heaters 515 vertically mounted in the heating chamber 511 on its upper side, and a temperature measuring sensor 517 at its central portion for measuring the temperature of the heating chamber 511. 5 The rod heater 515 and the temperature measuring sensor 517 are configured to prevent corrosion by using an anti-corrosion unit 520. The anti-corrosion unit 520 includes a rod heater 515 and the temperature measuring sensor. A tube 521 of 517, a connecting cover 523 for fixing the tube 521 to the upper portion of the manifold 513, and a 10 preventing corrosion gas 525 flowing in the tube 521. The connecting cover 523 has an upper cover and a lower cover 523a and 523c. The lower cover 523c has a clamp 518 for fixing the rod heater 515 and the temperature measuring sensor 517, and the exhaust gas supply hole 513a has The connection terminals 515a and 517a for electrically connecting the rod heaters 515 and the temperature measuring inductor 517 and extending from the I5, and a gas supply hole 523a for supplying the corrosion preventing gas 525. The jig 518 has a through hole 5i8a through which the anti-corrosion gas 525 supplied through the gas supply hole 523a enters the tube 521. The anti-corrupt gas 525 can use an inert gas such as N2, helium 2, air, h2, He 20 or the like. The tube 521 is made of a ceramic having high heat resistance and a high heat resistance (such as Al2〇3 or SiC) or gold crucible to have porosity, and therefore, the anti-corrosion gas 525 flowing in the tube 521 Fluidly communicating with the outside of the tube 521 0 43 1272121 The heating chamber 511 is further provided with a protective wall 531 separated from the inner wall, and the corrosion preventing gas 525 is supplied between the heating chamber 511 and the protective wall 531 to prevent The heating chamber 511 is rotted. As shown, the lower portion of the protective wall 531 may be formed to be closely connected 5 to the heating chamber 511 to block the passage, or to be separated from the bottom to open the corrosion preventing gas 525 to the inside of the heating chamber 511. It is preferable that the corrosion preventing gas 525 is supplied in a preheated state so as not to lower the heat value of the rod heaters 515. On the other hand, when the exhaust gases are supplied 10 through the exhaust gas supply holes 5i3a, the flow rates of the exhaust gases are lowered at the upper side of the manifold 513 to facilitate the adhesion of the powder to produce a thicker powder layer, thus increasing The possibility of blockage of the exhaust gas supply line structure. In order to solve this problem, a pulse unit 54 for periodically supplying a pulse of gas is additionally disposed at an upper portion of the exhaust gas supply hole 513a to prevent the powder layer from being generated or thickened. The pulse unit 540 includes a pulse tube 541 connected to the upper side of the exhaust gas supply hole 5, and the pulse gas of the air is periodically supplied through the pulse tube 541, and an electrically operated solenoid valve can be adjusted. Supply time. Further, the pulse tube 541 preferably has a shape in which the pulse gases are supplied in a tangential direction similar to the exhaust gas supply hole 5] [3a. Next, Fig. 18 is a view showing another embodiment of the heating chamber 511. As shown, the heating chamber 511 is further provided with a protective wall 531 as shown in Fig. 17. The protective wall 531 has a connecting pipe 532 formed on the outside thereof, and a cooling fluid such as a shell 2, an air, etc. is flown to prevent the heating chamber 511 from being overheated, and a heat insulating member 533 is inserted into the heating chamber 511 and the The walls 531 are protected to prevent heat from being transmitted to the outside and contribute to an increase in internal temperature. In this manner, the gas heated along the cooling tube 532 can be replaced by the corrosion preventing gas 525. The principle of operation of the exhaust gas dry processing apparatus will be described below. First, the exhaust gas discharged from the semiconductor manufacturing equipment (not shown) through the exhaust gas supply hole 513a of the manifold enters the heating chamber 511. At this time, the exhaust gas supply hole 513a is formed on the side of the manifold 513 to cause the exhaust gas to vortex, and therefore, the exhaust gas entering the heating chamber 511 is vortexed as shown in Fig. 17. When the exhaust gases are vortexed, the residence time of the exhaust gas in the heating chamber 511 becomes long. On the other hand, when the supplied exhaust gas stays in the heating chamber 5丨1, the exhaust gas is heated by the heating operation of the rod heater 515, and can be converted into a solid state to be Capture. When the exhaust gases are dry heat treated as described above, the fluorine gas reacts under the heated conditions of the rod heaters 515 to corrode the rod heaters 515 of the heating chambers 511. 20 This can be prevented by mounting the tube 521 outside the rod heater 515 and supplying the corrosion preventing gas 525 into the tube 521. The corrosion preventing gas 525 is preheated to a predetermined temperature so as not to lower the heat value of the rod heaters 515. When the anti-corrosion #gas 525 is supplied to the tube, the rod heating 45 1272121 is primarily blocked by the tube 521 and is secondaryly blocked by the anti-corrosion gas 525 supplied at a predetermined flow rate. The material 521 is made porous to contact the rod heater 515 such as the rot gas 5 to be heated to increase the temperature of the heating chamber 511. That is, by being treated as a heat transfer medium, the corrosion preventing gas 525 supplied to the tube 521 has a function of blocking and protecting the rod heaters 515 without reducing the heat value. The temperature measuring sensor 517 can also prevent corrosion by the foregoing principles. On the other hand, the risk of corrosion of the inner wall of the heating chamber 511 can also be solved by causing the corrosion preventing gas 525 to flow between the heating chamber 51 and the protective wall 53A. The retaining wall 531 mainly has a function of preventing the reaction of the heating chamber μ 1 from the rot I5 gas. When the protective wall 531 is corroded to produce a plurality of holes due to continuous use, the flow or pressure of the corrosion preventing gas 525 flowing between the heating chambers 511 of the protective wall 531 prevents the exhaust gases from directly contacting the heating chamber M1. . Next, when the rod heaters 515 are electrically operated by the above principle, the cooling water flowing through the cooling tubes 532 surrounding the protective wall 531 prevents the heating chamber 511 from being overheated. In addition, the heat generated by the rod heaters 515 is insulated by the heat insulating member 533 interposed between the heating chamber 511 and the protective wall 531 to reduce heat loss and reduce the temperature rise of the protective wall. time. 46 1272121 The advantage of supplying the exhaust gases in the side direction of the heating chamber to vortex the exhaust gases and supplying them to the heating chamber is that the treatment effect of the exhaust gases can be improved by increasing the residence time of the exhaust gases. Further, an advantage of preventing damage of the apparatus by using an anti-corrosion unit for protecting the heating chamber, a heater installed in the heating chamber 5, and a temperature measuring sensor is that the exhaust gas can be increased by reducing the error of the device. Handling amount 0 [Embodiment 5] Fig. 19 is a view showing the structure of a waste gas processing apparatus having a heating chamber corrosion preventing device of the present invention; and Fig. 20 is a view showing prevention of a heating chamber having another embodiment Fig. 21 is a view showing the structure of the exhaust gas treating device of the etching device; Fig. 21 is a view showing that in the structure of Fig. 19, in consideration of the occurrence of corrosion, the exhaust gas (CF4) is measured by forming an imaginary hole in the inner chamber. A graph of the concentration of 15; and Fig. 22 is a graph showing the measured value of the change in CF4 concentration at an arbitrary position between the heating chamber and the inner chamber in accordance with the N2 flow rate supplied from the structure of Fig. 21. As shown in Fig. 19, the exhaust gas treatment device has a predetermined space for accommodating the 20 exhaust gases to process exhaust gas discharged from the semiconductor manufacturing process equipment (for example, a fluorine gas for cleaning the chemical vapor deposition apparatus: CF4) , C2F6, NF3, etc.), and is provided with a heating chamber 411 having holes 411a and 411b and having upper and lower ends open, and a portion mounted at the periphery of the heating chamber 411 to be heated to a predetermined temperature to form the exhaust gas Processing conditions. 1272121 A manifold (not shown) for supplying the exhaust gas, air, etc. into the heating chamber 411 is combined with the upper side of the heating chamber 411, and the exhaust gas heated to the predetermined temperature in the heating chamber 411 is The mixed gas at the lower side of the heating chamber reacts to change the mixed gases and capture them. 5 mounted in the heating chamber 41 is a shielding unit 420 for preventing corrosion of the heating chamber 411 due to the reaction of the exhaust gas with the air and the thermal condition. The shielding unit 420 includes a mounting and heating. The chamber 411 is separated from the inner chamber 421, and the corrosion preventing 10 gas 423 flows between the heating chamber 411 and the inner chamber 421. Preferably, the non-corrosive gas such as vanadium, air, alpha gamma, and the like is prevented. The inner chamber 421 is formed in the heating chamber 411, and one end of the heating chamber 411 and one end of the inner chamber 421 are coupled to each other by an annular flange 15 member 425 on the same straight line. The flange member 425 has on one side thereof a supply of anti-corrosion gas for supplying the gas permeable hole 425a' between the inner chamber 421 and the heating chamber 411, and the gas inlet hole 425a' is supplied from the gas inlet hole 425a. 423 flows out through the hole 411b formed at the lower side of the heating chamber 411. According to the foregoing composition, the shielding unit 420 is mainly for preventing the heating chamber 411 from being exhausted by the exhaust gas (for example, fluorine gas such as CF4, QF6, NF3 or the like used in chemical vapor deposition or cleaning of a diffusion device). Corrosion caused by the reaction of the processing conditions of the heater 413. That is, the inner chamber 421 mainly has a function of preventing the reaction of the heating chamber 411 with the gases 48 1272121. When the inner chamber 421 is continuously used, it is formed by a lot of money. (4) The flow force of the anti-corrosion body 423 flowing between the chamber 421 and the heating chamber 411 prevents the exhaust gas from directly contacting the heating chamber 411 °. When the continuous flow is performed, the concentration of the exhaust gas is greatly reduced by the dilution effect of the anti-corrosion body 423 to prevent the heating chamber 411 from being severely corroded. According to the above description, the etching time of the heating chamber 411 is greatly extended compared to the prior art to further extend the pre-repair time, reduce the replacement cost of the heating chamber 10 411, and increase the service life of the heater 413. Figure 20 is a view showing another embodiment of the structure of the shield unit. The same components as those in Fig. 19 are denoted by the same reference numerals and the description thereof will be omitted. The structure different from that of Fig. 19 is A flange member 425 is coupled to the other end of the 15 inner chamber 421 to mount a partition member 427. The partition member 427 causes the corrosion preventing gas 423 to stay only between the heating chamber 411 and the inner chamber 421, and the like The supply and withdrawal of the corrosion preventing gas 423 is achieved by the gas inlet/outlet holes 425a and 425b formed at the flange member 425. 20 is mounted on one side of the flange member 425 on which the gas discharge hole 425b is formed. Above is a pressure gauge 431 for measuring the pressure of the corrosion preventing gas 423 flowing between the 411 and the inner chamber 421, and the valve unit 433 for opening/closing the passage is mounted on one side thereof and the measurement is passed. The pressure gauge 431 is supplied to the pressure of the corrosion preventing gas between the heating chamber 411 and the inner chamber 421. The valve unit 433 is opened to open the passage to release the heating chamber and the inner portion to 421. Preventing corruption 423, to maintain a certain pressure. When the inner chamber 421 or the heating chamber 41| has a hole due to corrosion, the pressure drop of the gas 5 is prevented from flowing between the heating chamber 411 and the inner chamber 421 It will be measured by the pressure gauge 431, so the corrosion state can be easily known. Fig. 21 is a view showing the formation of a hypothesis in the inner chamber 421 in the structure of Fig. 19 in consideration of the occurrence of corrosion. A hole 421 & to measure the structure of the exhaust gas (CF4). As shown in the figure, the length of the heating chamber, the distance between the outer periphery of the inner chamber 421 and the inner circumference of the heating chamber 411 is t* 2 mm, and the heating chamber 411 and the inner chamber 421 have a cylindrical shape. Further, the imaginary hole 421a is selected in a place where the rot is most likely to occur, and the diameter d thereof is different from each other (for example, 2 〇 mm or 4 〇 mn ^ And a Cf4 concentration _ 15 measurement position is separated from the center of the imaginary hole 421a by a predetermined distance (L: 40 mm). FIG. 22 is a flow rate of the supply according to the structure of FIG. 21 in the heating chamber 411 and the Any position between the inner chambers 421 (A position: in the imaginary hole 421a) A graph of the measured value of the CF4 concentration change slightly below. 20 In Fig. 22, the x-axis represents the value of the nitrogen supply [SLM (standard liter per minute)]' The y-axis represents the CF4 concentration value [ppmv], and the △ line represents The size is the measured value of the imaginary hole 421 & 40 mm in diameter, and the □ line indicates the measured value of the imaginary hole 421a whose size is 20 mm in diameter. As can be seen from the figure, the CF* concentration is significantly reduced in proportion to the amount of enthalpy supplied. 50 1272121 is small, when the size of the imaginary hole 421a is 20 mm, the concentration is 0 at a point where the nitrogen amount is 7 liters/min, and when the size of the imaginary hole 421a is 40 mm, the concentration is 0.5 liter/min. The point is 0. The conditions with 1 result are as follows: CF4 is 0.5 [SLM], air is 5 200 [SLM], and the heating temperature of the heater 413 is 700° (:. The concentration value of the CF4 can be converted by FTIR (Fourier transform far) Infrared (Fourier Transform Infra_Red) spectrometry is used to measure the corrosion of the heating chamber caused by the exhaust gas by installing the shielding unit in the heating chamber as described above. The service life and the pre-repair time. In addition, the replacement cost of the heating chamber can be significantly reduced, and the corrosion of the heater due to the corrosion of the heating chamber can be prevented to prolong the service life of the heater. 6] 15 20 Figure 23 is a diagram of a part of the exhaust gas treatment device of the invention - the actual closure; Figure 24 is a cross-sectional view of the BB of Figure 23; Figure 25A shows the pulse - single (four) Fig. 24 is a view showing the structure of the cooling water storage tank of Fig. 24; Fig. is a view showing the structure of the cooling water supply pipe in which the pulse unit is incorporated in Fig. 24; Show the gas for the 23rd picture a figure of a plastic example; and a predetermined angle

第27圖是用以顯示該冷卻單元之管路以 51 1272121 斜之例子的圖。 如圖所示,該廢氣處理裝置包含一乾式處理單元9〇〇 與一冷卻單元800。 該乾式處理單元900具有—外管91〇,一内管93〇與一加 广熱器950。 該冷卻單元800包含一具有—凸緣813之中空管81〇,而 該凸緣813具有一與該乾式處理單元9〇〇之下部流體性地連 通且收納冷卻水並且在滿溢之狀態時可溢流至其内部的 811 〇 10 安裝在該冷卻水收納槽811處的是至少一冷卻水供應 孔820,而一冷卻水抽出孔821形成在該冷卻水收納槽811之 圓周方向上,且其直徑d小於該冷卻水收納槽811之寬度d 並且可與整個通道流體性地連通。 當安裝有多數冷卻水供應孔820時,該冷卻水抽出孔 I5 821必須安裝成具有與該冷卻水供應孔820相同之方向。 該冷卻水供應孔820與供應冷卻水之冷卻水供應管822 連接。 沿圓周供應冷卻水會產生讓冷卻水渦旋與溢流,可確 實阻止產生流速差並防止粉末局部地堵塞。 20 其次,為了促使冷卻水產生渦旋效果,可另外加入第 24至25b圖所示之脈衝單元850。 該脈衝單元850具有使週期性地操作與供應之冷卻水 產生脈衝流之功能,且構成可通過該冷卻水供應孔82〇排 水’或獨自地構成於該冷卻水供應孔82〇上。 52 1272121 第24圖與第25A圖係用以顯示獨自地構成於該冷卻水 供應孔820上之例子的圖,如圖所示,該脈衝單元850包括 一安裝在該冷卻水收納槽811底處之脈衝流體供應孔851, 一與該脈衝流體供應孔851連接之脈衝管852,及一用以週 5 期性地開/關該脈衝管852之通道的電磁閥853。 該脈衝流體供應孔851具有近似於該冷卻水供應孔820 之形狀,且一脈衝流體抽出孔85la沿著該冷卻水收納槽811 之圓周方向形成以與該冷卻水供應孔820之冷卻水抽出孔 821之相似方向形成。 10 接著,第25B圖是用以顯示該脈衝單元850與該冷卻水 供應管822之連接狀態的圖,如圖所示,該脈衝管852與該 冷卻水供應管822連接以透過該冷卻水供應孔82〇抽取該冷 卻水。 此時,一脈衝流體供應孔851是不必要的。 15 依據前述說明,雖然該脈衝單元850與該冷卻水供應孔 820分開或與該冷卻水供應孔820連接,但是亦可使用一種 組合兩種結構關係者。 在第25A與25B圖中,標號854與855表示一用以防止該 冷卻水與氣體逆流之止逆閥。 2〇 接著,為了解決在該冷卻單元8〇〇與該乾式處理單元 900之結合部份處所產生之快速溫度差使粉末結塊之問 題,一用以供應加熱至一預定溫度之氣體的氣體供應單元 700安裝在該冷卻水溢流之上侧。 如第23與27圖所示,該氣體供應單元7〇〇具有安裝在一 53 1272121 内管930中且與該内管930分開之氣體供應管710,以便以垂 直之方向供應該等預熱氣體。 該氣體供應管710具有主要阻止該内管93G與該等氣體 之反應及在_管93。之下端處讀末雜的魏,當該内 5 =93()由於連續使用而舰時,在該氣體供應管71〇與該内 管930之間流動之氣體的壓力可防止該等廢氣與該内管伽 接觸。 此外,當該等廢氣連續流動時,該等氣體之稀釋效果 亦可防止該内管930受到嚴重的腐蝕。 10 其次,第26圖是用以顯示該氣體供應單元7〇〇之另一例 子的圖,如第26圖所示,該等氣體係在該冷卻水溢流之上 侧處以與該粉末之排出方向垂直之方向供應。 該氣體供應單元700具有一用以在其上表面處接觸該 荨氣體之氣體收納槽731 ’與一具有與該氣體收納槽731流 U 體性地連通之氣體供應孔733的氣體供應板730。 該氣體供應孔733係由該氣體供應板730之一側部穿過 而形成,可以渦旋方向供應該等氣體,當由該氣體供應孔 733供應之氣體充滿該氣體收納槽731時,該等氣體產生渦 旋而可在其中利用與抽出該冷卻水相同之理論來溢流。 20 所供應之氣體係以如氮氣(NO之預熱氣體為佳。 接著,在該冷卻水溢流之上側處,如第23至26圖所示, 安裝有一蓋構件1000,以使該冷卻水沿著一管810流動且不 會分散至上側。 該蓋構件1000係由一環形板1010形成且係安置於該冷 54 1272121 卻單元800與該乾式處理單元900之間,其内部具有一形成 一預定角度之傾斜部份以覆蓋由該冷卻水收納槽811溢流 出來之冷卻水,使該冷卻水向下流動。 此時,該蓋構件1〇〇〇必須低於形成一充滿狀態之該冷 5 卻水收納槽811之内壁。 當構成第27圖中之該冷卻單元8〇〇的管810具有該管之 直徑沿著向下方向減少之形狀時,該粉末與該等廢氣平順 地向下移動並且沿著該傾斜表面旋轉。 藉由前述組成,供應預熱至預定溫度之氣體解決了由 10於在一低溫環境之冷卻單元與高溫環境乾式處理單元之結 合部處之蒸氣逆流所產生之快速溫度差或粉末堵塞的問 題。 此外,安裝該蓋構件可解決該冷卻水分散或該粉末堵 塞產生渦流而使粉末易於在該結合部堵塞的問題。 15 另外,涡旋供應該冷卻水可避免產生不規則之流速差 與流速分布,藉此防止在低流速之位置產生粉末堵塞。 如前述般構之本發明具有更有效地處理廢氣的優點。 雖然本發明已配合被視為最實際且最佳之實施例說明 過了’但是在此應了解的是本發明不受限於所述之實施 20例,相反地,本發明應可涵蓋以下申請專利範圍之精神與 範疇内之各種變化例。 【圖式簡單說明】 第1至3圖是顧示本發明之廢氣處理裝置之濕式預處理 裝置的例子的圖; 1272121 第4圖是顯示藉由該濕式預處理裝置,氨氣之去除效率 可高達80%之圖表; 第5圖是顯示採用用於第3圖之多次廢氣處理之多次濕 式預處理之濕式·燃燒廢氣處理裝置之結構的圖; 5 第6與7圖是結構圖’顯示用以去除包含在廢氣中之液 體成份之本發明之廢氣處理裝置的例子; 第8至11圖顯示適用於本發明之冷卻單元的例子; 第12至14圖顯示適用於本發明之液體分離/冷卻單元 之實施例; 10 第15圖是用以顯示以多階段方式安裝之液體分離/冷 卻單元的結構圖; 第16圖是用以顯示本發明之廢氣乾式處理裝置之結構 的圖; 第17圖是第16圖之縱向橫截面圖; I5 第18圖是用以顯示本發明之廢氣乾式處理裝置之另一 加熱室之結構的圖; 第19與20圖是用以顯示具有本發明之防止加熱室腐蝕 裝置之廢氣處理裝置之結構的圖; 第21圖顯示由於在第19圖之結構中產生腐蝕而藉由在 20該内至中形成一假想孔來測量廢氣(CF4)之濃度的結構; 第22圖是有關於在該加熱室與該内室之間之任一位置 處’依據由第21圖所供應之N2流量所產生之CF4濃度變化之 測量值的圖表; 第23圖是用以顯示本發明之實施例之廢氣處理裝置 56 1272121 (加熱室)之一部份的圖; 第24圖是第23圖之B-B1之橫截面圖; 第25A圖是用以顯示一脈衝單元結合於第24圖之冷卻 水供收納槽中之結構的圖; 5 第25B圖是用以顯示一脈衝單元結合於第24圖之冷卻 水供應管路中之結構的圖广^ ^ ^ ^ ^ ' 第26圖是用以顯示第23圖之氣體供應單元係構成為另一 一種型態之例子的圖;及 第27圖是用以顯示該冷卻單元之管路以一預定角度傾 · 10 斜之例子的圖。 【圖式之主要元件代表符號表】 10…濕式預處理裝置 19…内筒 10a...外筒 19a···内-外筒連接部 11···廢氣進入孔 20…反應部 12···反應物進入孔 21···排出孔 13…氣體喷射孔 22…濕度降低部進入孔 13a···氣體噴射孔閥 23…濕度降低部 14…反應物喷射孔 24…隔熱構件 14a···反應物喷射孔閥 26…氣體喷射孔 15…微細化喷嘴 26a…閥 16...微細地喷灑霧化反應物 30...濕式預處理裝置 17…圓柱形筒 31…放流孔 17a…外-内筒連接部 32…預貯槽;溶劑儲存筒 18…角錐形筒 33···水位保持器 57 1272121 34…水位保持線 81d…氣體進入孔 35…粉末 81e···氣體排出孔 36…預貯槽加壓器 82…馬達 37…閥 83…轉子 38…蓋體 84…喷射單元 39...連接管 85···轉子 39a···連接管進入孔 85a...圓柱管 40…濕式預處理裝置 85b…填充物 41…放流管結構 86…溶劑 61…預處理導管 90…第二濕式處理單元 61a…廢氣供應孔 91..導管 61b…水溶性氣體溶劑供應孔 91a…蓋體 61c···廢氣萃取孔 92…溶劑供應管 61d…溶劑萃取孔 93…喷射喷嘴 70…乾式處理單元 100…冷卻單元 71…廢氣供應管 101···冷卻水供應管 72…歧管 102…冷卻水供應孔 72a…廢氣供應孔 103···連接管 73...加熱室 110…除濕單元 80…第一濕式處理單元 120…排氣單元 81…室 130…放流單元 81a...侧壁 131,132,133…排流管結構 81a’...通孔 135···放流室 81b,81c··.空間 136···排流泵Figure 27 is a view showing an example in which the piping of the cooling unit is inclined at 51 1272121. As shown, the exhaust gas treatment device includes a dry processing unit 9A and a cooling unit 800. The dry processing unit 900 has an outer tube 91 〇, an inner tube 93 〇 and a heater 950. The cooling unit 800 includes a hollow tube 81A having a flange 813 having a fluid communication with the lower portion of the dry processing unit 9 and receiving cooling water and in a state of overflow 811 〇 10 that can be overflowed to the inside thereof is installed at the cooling water storage tank 811 at least one cooling water supply hole 820, and a cooling water extraction hole 821 is formed in the circumferential direction of the cooling water storage groove 811, and The diameter d is smaller than the width d of the cooling water receiving groove 811 and is fluidly connectable to the entire passage. When a plurality of cooling water supply holes 820 are installed, the cooling water extraction holes I5 821 must be installed to have the same direction as the cooling water supply holes 820. The cooling water supply hole 820 is connected to a cooling water supply pipe 822 that supplies cooling water. The supply of cooling water along the circumference creates vortexing and overflowing of the cooling water, which reliably prevents the flow rate difference from occurring and prevents the powder from being partially blocked. 20 Next, in order to promote the vortex effect of the cooling water, the pulse unit 850 shown in Figs. 24 to 25b may be additionally added. The pulse unit 850 has a function of generating a pulse flow of the cooling water that is periodically operated and supplied, and is configured to be drained by the cooling water supply hole 82 or separately formed on the cooling water supply hole 82. 52 1272121 FIG. 24 and FIG. 25A are diagrams for showing an example of being independently formed on the cooling water supply hole 820. As shown, the pulse unit 850 includes a mounting portion at the bottom of the cooling water storage groove 811. The pulse fluid supply hole 851, a pulse tube 852 connected to the pulse fluid supply hole 851, and a solenoid valve 853 for periodically opening/closing the passage of the pulse tube 852. The pulse fluid supply hole 851 has a shape similar to the cooling water supply hole 820, and a pulse fluid extraction hole 85la is formed along the circumferential direction of the cooling water storage groove 811 to form a cooling water extraction hole with the cooling water supply hole 820. A similar direction of 821 is formed. 10 is a diagram for showing the connection state of the pulse unit 850 and the cooling water supply pipe 822. As shown, the pulse tube 852 is connected to the cooling water supply pipe 822 to transmit the cooling water supply. The hole 82 is extracted from the cooling water. At this time, a pulsed fluid supply hole 851 is unnecessary. According to the foregoing description, although the pulse unit 850 is separate from the cooling water supply hole 820 or connected to the cooling water supply hole 820, a combination of two structural relationships may be used. In Figs. 25A and 25B, reference numerals 854 and 855 denote a check valve for preventing the cooling water from flowing back with the gas. 2〇 Next, in order to solve the problem of agglomeration of the powder at a rapid temperature difference generated at the junction of the cooling unit 8〇〇 and the dry processing unit 900, a gas supply unit for supplying a gas heated to a predetermined temperature The 700 is installed on the upper side of the cooling water overflow. As shown in Figures 23 and 27, the gas supply unit 7 has a gas supply pipe 710 installed in an inner tube 930 of the 53 1272121 and separated from the inner tube 930 to supply the preheated gases in a vertical direction. . The gas supply pipe 710 has a function of mainly preventing the reaction of the inner pipe 93G with the gases and the pipe 93. At the lower end, when the inner 5 = 93 () is used for continuous use, the pressure of the gas flowing between the gas supply pipe 71 and the inner pipe 930 can prevent the exhaust gas from being Inner tube gamma contact. In addition, the dilution effect of the gases also prevents the inner tube 930 from being severely corroded when the exhaust gases are continuously flowing. 10, Fig. 26 is a view for showing another example of the gas supply unit 7, as shown in Fig. 26, the gas system is discharged at the upper side of the cooling water overflow with the powder. The direction is supplied in the direction perpendicular to the direction. The gas supply unit 700 has a gas supply groove 731' for contacting the helium gas at its upper surface, and a gas supply plate 730 having a gas supply hole 733 communicating with the gas receiving groove 731. The gas supply hole 733 is formed by passing through one side of the gas supply plate 730, and the gas can be supplied in a swirling direction. When the gas supplied from the gas supply hole 733 fills the gas receiving groove 731, the gas supply hole 733 is formed. The gas creates a vortex in which it can overflow using the same theory as the extraction of the cooling water. 20 supplied gas systems such as nitrogen (NO preheating gas is preferred. Next, at the upper side of the cooling water overflow, as shown in Figures 23 to 26, a cover member 1000 is installed to make the cooling water The cover member 1000 is formed by an annular plate 1010 and is disposed between the unit 500 and the dry processing unit 900, and has an inner portion formed therein. The inclined portion of the predetermined angle covers the cooling water overflowed by the cooling water receiving groove 811 to cause the cooling water to flow downward. At this time, the cover member 1 must be lower than the cold forming a full state. 5 but the inner wall of the water receiving groove 811. When the tube 810 constituting the cooling unit 8A in Fig. 27 has a shape in which the diameter of the tube decreases in the downward direction, the powder and the exhaust gas are smoothly downward. Moving and rotating along the inclined surface. With the foregoing composition, supplying a gas preheated to a predetermined temperature solves the problem of vapor backflow caused by 10 at a junction between a cooling unit in a low temperature environment and a dry processing unit in a high temperature environment. fast The problem of the degree of difference or the clogging of the powder. Further, the installation of the cover member can solve the problem that the cooling water is dispersed or the powder is clogged to generate eddy currents to make the powder clogging at the joint. 15 In addition, the vortex supplies the cooling water to avoid generation. Irregular flow rate difference and flow rate distribution, thereby preventing powder clogging at low flow rates. The invention as described above has the advantage of more efficient treatment of the exhaust gas. Although the present invention has been considered to be the most practical and optimal The embodiments are described herein, but it is to be understood that the invention is not limited to the description of the embodiments described herein, but the invention is intended to cover various modifications within the spirit and scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 to 3 are views showing an example of a wet pretreatment apparatus of an exhaust gas treatment apparatus of the present invention; 1272121 FIG. 4 is a view showing removal efficiency of ammonia by the wet pretreatment apparatus. Figure up to 80%; Figure 5 is a diagram showing the structure of a wet/combustion exhaust gas treatment device using multiple wet pretreatments for multiple exhaust gas treatments in Figure 3; 5 Figures 6 and 7 are structural diagrams 'showing an example of an exhaust gas treatment device of the present invention for removing liquid components contained in exhaust gas; Figures 8 to 11 show examples of a cooling unit suitable for use in the present invention; Figure 14 shows an embodiment of a liquid separation/cooling unit suitable for use in the present invention; 10 Figure 15 is a structural view showing a liquid separation/cooling unit installed in a multi-stage manner; Figure 16 is a view showing the present invention. Figure 17 is a longitudinal cross-sectional view of Figure 16; I5 Figure 18 is a view showing the structure of another heating chamber of the exhaust gas dry processing apparatus of the present invention; Figure 20 is a view for showing the structure of the exhaust gas treating apparatus having the apparatus for preventing the heating chamber of the present invention; Figure 21 is a view showing the formation of a hypothesis by the occurrence of corrosion in the structure of Fig. 19 by The structure for measuring the concentration of the exhaust gas (CF4) by the hole; Fig. 22 is for the change of the CF4 concentration generated according to the N2 flow supplied from Fig. 21 at any position between the heating chamber and the inner chamber Measured value Fig. 23 is a view showing a part of an exhaust gas treating device 56 1272121 (heating chamber) of an embodiment of the present invention; Fig. 24 is a cross-sectional view of B-B1 in Fig. 23; Fig. 25A Is a diagram for showing a structure in which a pulse unit is incorporated in the cooling water supply tank of FIG. 24; 5 FIG. 25B is a diagram showing a structure in which a pulse unit is incorporated in the cooling water supply line of FIG. Figure 26 is a diagram for showing an example in which the gas supply unit of Fig. 23 is constructed as another type; and Fig. 27 is a diagram for showing the piping of the cooling unit A diagram of an example of tilting at a predetermined angle. [Main component representative symbol table of the drawing] 10: Wet pretreatment device 19... Inner cylinder 10a... Outer cylinder 19a···Inner-outer cylinder connecting portion 11···Exhaust gas inlet hole 20...Reaction portion 12· ·Reagent inlet hole 21···Discharge hole 13...Gas injection hole 22...Humidity reduction unit inlet hole 13a···Gas injection hole valve 23...Humidity reduction unit 14...Reaction substance injection hole 24...Insulation member 14a· ·Reactant injection orifice valve 26...Gas injection hole 15...Micronization nozzle 26a...Valve 16...Micronally spray atomized reactant 30...Wet pretreatment device 17...cylindrical cylinder 31...discharge hole 17a...outer-inner cylinder connecting portion 32...pre-storage tank; solvent storage cylinder 18...corner cone 33···water level holder 57 1272121 34...water level holding line 81d...gas inlet hole 35...powder 81e···gas discharge hole 36...pre-slot pressurizer 82...motor 37...valve 83...rotor 38...cover 84...spray unit 39...connector 85···rotor 39a···connector inlet hole 85a...cylindrical tube 40 ...wet pretreatment device 85b...filler 41...discharge tube structure 86...solvent 61...pretreatment conduit 90 ...the second wet processing unit 61a...the exhaust gas supply hole 91..the conduit 61b...the water-soluble gas solvent supply hole 91a...the cover body 61c··the exhaust gas extraction hole 92...the solvent supply pipe 61d...the solvent extraction hole 93...the injection nozzle 70 ...dry processing unit 100...cooling unit 71...exhaust gas supply pipe 101···cooling water supply pipe 72...manifold 102...cooling water supply hole 72a...exhaust gas supply hole 103···connecting pipe 73...heating chamber 110... Dehumidifying unit 80... First wet processing unit 120... Exhaust unit 81... Chamber 130... Discharge unit 81a... Side wall 131, 132, 133... Drain tube structure 81a'... Through hole 135··· Release Room 81b, 81c··. Space 136···Drainage pump

58 1272121 137…冷卻水供應泵 411…加熱室 210…冷卻單元 41 la, 41 lb... 212…冷卻管 413…加熱器 215…熱交換器 420…屏蔽單元 216…冷卻管 421…内室 220...加熱室 421a…假想孔 230…放流槽 423…防止腐钱氣體 240...濕式處理單元;冷卻盤管 425…凸緣構件 250…本體 425a…氣體進入孔 25L"渦旋管 425b…氣體排出孔 253...加壓空氣導管 427…分隔構件 255...熱空氣排出管 431···壓力計 256…冷卻空氣排出管 433.··閥單元 260…放泄彎管 511…加熱室 邓0…液體分離/冷卻單元 513···歧管 310…液體分離器 513a··.廢氣供應孔 312…進入孔 515…桿式加熱器 314…排出孔 515斗517a···連接端子 316…錐形排流部 517…溫度測量感應器 320…外管 518···夾具 330…密閉空間 518a…通孔 340…内管 520···防止腐蝕單元 350…蓋 521.··管 355…密閉空間 523···連接蓋58 1272121 137...Cooling water supply pump 411...heating chamber 210...cooling unit 41 la, 41 lb...212...cooling tube 413...heater 215...heat exchanger 420...shield unit 216...cooling tube 421...inner chamber 220 ...heating chamber 421a... imaginary hole 230... venting groove 423... preventing rot gas 230... wet processing unit; cooling coil 425... flange member 250... body 425a... gas inlet hole 25L & vortex tube 425b ...gas discharge hole 253...pressurized air duct 427...partition member 255...hot air discharge pipe 431···pressure gauge 256...cooling air discharge pipe 433.··valve unit 260...bleeding pipe 511... Heating chamber Deng 0...liquid separation/cooling unit 513···manifold 310...liquid separator 513a·.exhaust gas supply hole 312...inlet hole 515...rod heater 314...discharge hole 515 bucket 517a···connection terminal 316...conical draining portion 517...temperature measuring sensor 320...outer tube 518···clamp 330...closed space 518a...through hole 340...inner tube 520···corrosion preventing unit 350...cover 521.··tube 355 ...closed space 523···connecting cover

59 1272121 523a···上蓋 852"•脈衝管 523a,…氣體供應孔 853·.·電磁闕 523c…下蓋 854,855···止逆閥 525...防止腐蝕氣體 900...乾式處理單元 531…保護壁 910…外管 532...冷卻管 930···内管 533...隔熱構件 950…加熱器 540…脈衝單元 1000"·蓋構件 541…脈衝管 1010…環形板 700…氣體供應單元 710…氣體供應管 730…氣體供應板 731…氣體收納槽 733...氣體供應孔 800· ••冷卻單元 810...中空管 811...冷卻水收納槽 813…凸緣 820".冷卻水供應孔 821…冷卻水抽出孔 822…冷卻水供應管 850...脈衝單元 851…脈衝流體供應孔 851a...脈衝流體抽出孔59 1272121 523a···Upper cover 852"•Pulse tube 523a,...Gas supply hole 853·.·Electromagnetic 阙523c... Lower cover 854,855···Check valve 525...Anti-corrosion gas 900... Dry processing unit 531 ...protecting wall 910...outer tube 532...cooling tube 930···inner tube 533...insulation member 950...heater 540...pulse unit 1000"·cover member 541...pulse tube 1010...annular plate 700...gas Supply unit 710...gas supply pipe 730...gas supply plate 731...gas storage groove 733...gas supply hole 800·•cooling unit 810... hollow tube 811...cooling water storage groove 813... flange 820&quot Cooling water supply hole 821... Cooling water extraction hole 822... Cooling water supply pipe 850... Pulse unit 851... Pulse fluid supply hole 851a... Pulse fluid extraction hole

6060

Claims (1)

-22212, 92129311號專利申請案申請專利範圍修正本 ' 3修(¾正本 修正日期:94年10月-22212, 92129311 Patent Application Application Patent Revision Amendment '3 repair (3⁄4 original) Revision date: October 94 範圍: 1 · 種廢氣濕式預處理裝置,係安裝在一廢氣處理裝置之 前端處’該廢氣濕式預處理裝置包含: 一微粒液滴產生器,用以微粒狀地噴灑一用以進行 廢氣預處理之反應物;及 一反應部,用以形成一使廢氣與該微粒狀地噴灑之 反應物反應之空間並且由一外筒與内筒所構成, 其中該反應部包含: 一供該等廢氣進入之進入孔; 一供該微粒狀地喷灑之反應物進入的微粒液滴反 應物進入孔; 一用以藉由該等廢氣與該微粒狀地噴灑之反應物 之反應來排出經過濕式預處理之廢氣的排出孔;及 一用以排流由該微粒狀地喷灑之反應物與該等廢 氣反應產生之污染物的放流孔。 2·如申請專利範圍第1項之廢氣濕式預處理裝置,其中爷 外筒是由一圓柱形筒與一錐形筒構成。 3·如申請專利範圍第1項之廢氣濕式預處理裝置,其中唁 外肉疋一圓柱形筒。Scope: 1 · A waste gas wet pretreatment device installed at the front end of an exhaust gas treatment device 'The exhaust gas wet pretreatment device comprises: a particulate droplet generator for spraying particulates for exhaust gas a pretreated reactant; and a reaction portion for forming a space for reacting the exhaust gas with the particulate sprayed reactant and comprising an outer cylinder and an inner cylinder, wherein the reaction portion comprises: The exhaust gas enters the inlet hole; a particulate droplet reactant for entering the particulate sprayed reactant enters the pore; and is used for discharging through the wet by reacting the exhaust gas with the particulate sprayed reactant a discharge hole of the pretreated exhaust gas; and a discharge hole for discharging a contaminant generated by the particulate sprayed reactant reacting with the exhaust gas. 2. The exhaust gas wet pretreatment apparatus according to claim 1, wherein the outer cylinder is composed of a cylindrical cylinder and a conical cylinder. 3. The exhaust gas wet pretreatment apparatus according to claim 1, wherein the outer meat is a cylindrical cylinder. 裝置,更包含: 度,及 一除濕部,係安裝在該排出孔與該廢氣處理裝置之 間以減少由該排出孔排出之該濕式預處理廢氣的濕 61 1272121 一隔熱構件,係安裝在該除濕部之外壁處。 5.如申請專利範圍第4項之廢氣濕式預處理裝置,其中該 除濕部包括一用以將該加壓低濕度氣體喷入該除濕部 中之氣體加壓器。 5 6. —種複式濕式預處理裝置,包含多數如申請專利範圍第 1至3項中任一項之廢氣濕式預處理裝置。 7. 如申請專利範圍第6項之複式濕式預處理裝置,更包 含: 一除濕部,係安裝在該排出孔與該廢氣處理裝置之 10 間以減少由該排出孔排出之該濕式預處理廢氣的濕 度;及 一隔熱構件,係安裝在該除濕部之外壁處。 8. 如申請專利範圍第7項之複式濕式預處理裝置,更包 含: 15 一預貯槽,用以在由該排出孔排出之污染物排至一 貯槽之前先堆積該等污染物; 一水位保持器,用以在操作該複式濕式預處理裝置 時於該預貯槽中填充反應物;及 一預貯槽加壓器,用以將加壓氣體喷入該預貯槽。 20 9.如申請專利範圍第7或8項之複式濕式預處理裝置,其中 該除濕部更包含一用以將加壓之低濕度氣體喷入該除 濕部之氣體加壓器。 10. —種用以在一廢氣處理裝置之前端處濕式預處理廢氣 之方法,該方法包含下列步驟: 62 1272121 將廢氣送入一反應部; 將一微粒狀地噴灑之反應物送入該反應部; 利用在該反應部中之氣旋效應,使該等廢氣與該微 粒狀地喷灑之反應物反應; 5 將該等濕式預處理廢氣排放至一排出孔;及 使污染物流至一放流孔。 11·如申請專利範圍第1〇項之方法,其中該微粒狀地喷灑之 反應物係由一般中性水、自來水、Na〇H或Ca〇H2等化 學物之稀釋溶液與電解水之至少一者製成。 10丨2.如申請專利範圍第10項之方法,其中將該微粒狀地喷灑 之反應物送入該反應部之步驟包括藉由喷射具有流量 範圍在5到201pm之氮氣,將具有流量範圍在1〇〇到 300cc/min之一般中性水微粒狀地喷灑的步驟。 13. 如申請專利範圍第10項之方法,在使污染物流至一放流 15 孔之步驟之前,更包含以下步驟: 減少排放在該排出孔之該經濕式預處理之廢氣的 濕度;及 加熱濕度已減少之該經濕式預處理之廢氣。 14. 如申請專利範圍第13項之方法,其中該加熱步驟包含利 20 用一用以保持大約50°c至200°c之範圍的隔熱構件來加 熱濕度已減少之該經濕式預處理之廢氣。 15· 一種廢氣處理裝置,包含有: - 預處理單元,用以供應一水溶性氣體且去除一包 3在來自半導體製造設備之廢氣中的水溶性氣體; 63 1272121 一乾式處理單元,用以透過該預處理單元,藉由加 熱至一預定溫度來氧化未處理之廢氣; 一濕式預處理單元,用以溶解未透過該乾式處理單 元處理處理之未反應廢氣並且捕捉微細粉末; 5 一濕式處理單元,用以透過該濕式預處理單元接收 該未處理廢氣與該微細粉末且喷灑一預定溶劑以溶解 該等廢氣,並且透過一收集過濾器收集該微細粉末;及 一放流單元,用以去除與透過該預處理單元、該濕 式預處理單元與該濕式處理單元處理過之粉末混合的 10 溶劑。 16. —種廢氣處理方法,包含有: 一預處理步驟,係將一水溶性氣體供應至一供由半 導體製造設備供應之廢氣通過之通道上並且去除包含 在該等廢氣中之水溶性氣體; 15 一乾式處理步驟,係藉由加熱由該預處理步驟供應 之未處理廢氣至一預定溫度來產生粉末; 一濕式預處理步驟,係捕捉通過該乾式處理步驟之 未處理微細粉末並藉由在其中填充一填充劑溶解該水 溶性氣體並且轉動安裝成其一端可浸入該水溶性溶劑 20 中之多孔質圓柱形管;及 一濕式處理步驟,係溶解該等廢氣且藉由收納該等 未處理廢氣與通過該濕式預處理步驟之微細粉末並喷 灑該溶劑來收集該微細粉末。 17. —種廢氣處理裝置,包含有: 64 1272121 一加熱室’用以加熱廢氣以轉變其化學特性;及 /"P早7L,#、與該加熱室連通以冷卻由該加熱室 產生之經淨化之氣體,以捕捉包含在該經淨化之氣體中 之液體成份並使該等液體成份凝結。 18· 一種廢氣處理裝置,包含有: 、日一 ^熱室’用以加熱與廢氣、惰性氣體與空氣混合 之混合氣體,以轉變其化學特性; 、/晨式處理單元,係與該加熱室連通以進行水處理 並且累積在該加熱室中產生的灰塵顆粒;及 ~卻單兀,用以冷卻由該濕式處理單元所排出之 、、二牙化之讀,以捕捉包含在該等經淨化之氣體中之 體成份。 19·如申請專利範圍第17或18項之廢氣處理裝置,其中該冷 卻單元包括一安裝成可環繞該等經淨化氣體所通敎 管路結構。 2〇.如申請專利範圍第19項之廢氣處理裝置,其中該冷卻管 係與一冷卻槽連接以使該冷卻水循環。 21·如申請專利範1]第19項之廢氣處理裝置,其中該冷卻管 U冷卻裔連接以使該冷卻水通過一熱交換器且利用 另一直接連接於一冷卻槽之冷卻管來循環。 22·如申请專利範圍第17或18項之廢氣處理裝置,其中該冷 邠單元包括一安裝在該等經淨化氣體所通過之管路結 構。 、、口 23.如申請專利範圍第22項之廢氣處理裝置,其中該冷卻管 65 1272121 係與一冷卻槽連接以使該冷卻水循環。 24.如申請專利範圍第22項之廢氣處理裝置,其中該冷卻管 與一冷卻器連接以使該冷卻水通過一熱交換器且利用 另一直接連接於一冷卻槽之冷卻管來循環。 5 25.如申請專利範圍第17或18項之廢氣處理裝置,其中該冷 卻單元與一冷凍器連接,使該冷卻水在該冷凍器與該冷 卻單元之間循環。 26. —種廢氣處理裝置,包含有: 一加熱室,用以加熱與廢氣、惰性氣體與空氣混合 10 之混合氣體,以轉變其化學特性; 一濕式處理單元,係與該加熱室連通以進行水處理 並且累積在該加熱室中產生的灰塵顆粒;及 一液體分離/冷卻單元,用以吸收由該濕式處理單 元所排出之經淨化之氣體之流速,以分離液體成份與該 15 等經淨化之氣體,並且冷卻該等經淨化之氣體以捕捉且 凝結出包含在該等經淨化之氣體中之液體成份。 27. 如申請專利範圍第26項之廢氣處理裝置,其中該液體分 離/冷卻單元包含: 一旋風分離式液體分離器,其中該經淨化氣體由一 20 側面進入且排出至上側;及 一冷卻模組,係安裝在該液體分離器中,且包括一 内管及一配置成與該内管呈同軸關係之外管,以在該内 管與該外管之間形成一密閉空間,且其中冷卻水循環通 過該密閉空間。 66 1272121 28. 如申請專利範圍第26項之廢氣處理裝置,其中該液體分 離/冷卻單元包含: 一旋風分離式液體分離器,其中該經淨化氣體由一 側面進入且排出至上側;及 5 一冷卻模組,其中形成有一蓋,使該冷卻模組與該 液體分離器之本體之整個外表面一致地分開以在其間 形成一密閉空間,且其中冷卻水循環通過該密閉空間。 29. 如申請專利範圍第26項之廢氣處理裝置,其中該液體分 離/冷卻單元包含: 10 一旋風分離式液體分離器,其中該經淨化氣體由一 側面進入且排出至上側; 一第一冷卻模組,係安裝在該液體分離器中,且包 括一内管及一配置成與該内管呈同軸關係之外管,以在 該内管與該外管之間形成一密閉空間,且其中冷卻水循 15 環通過該密閉空間;及 一第二冷卻模組,其中形成有一蓋,使該第二冷卻 模組與該液體分離器之本體之整個外表面一致地分開 以在其間形成一密閉空間,且其中冷卻水循環通過該密 閉空間。 20 30.如申請專利範圍第26項之廢氣處理裝置,其中該液體分 離/冷卻單元包含: 一旋風分離式液體分離器,其中該經淨化氣體由一 側面進入且排出至上側; 一渦旋管,包括一用以將加壓空氣供應至該本體之 67 1272121 加壓空氣供應管,一用以排出熱空氣之熱空氣排出管與 一用以排出冷卻空氣之冷卻空氣排出管;及 一冷卻盤管,係安裝在該液體分離器中,使其一端 與該渦旋管之冷卻水排出管流體性地連通,且另一端是 5 開口的。 31. 如申請專利範圍第26項之廢氣處理裝置,其中該液體分 離/冷卻單元係安裝成多階段且藉由在其間設置一放泄 彎管而互相流體性地連通,藉此實際地增加通道長度。 32. —種廢氣處理裝置,包含有: 10 一加熱室,用以加熱與廢氣、惰性氣體與空氣混合 之混合氣體,以轉變其化學特性; 一濕式處理單元,係與該加熱室流體性地連通以進 行水處理並且累積在該加熱室中產生的灰塵顆粒,並使 用一喷霧化噴嘴,以便以一霧狀態喷灑在一預定尺寸以 15 下之水顆粒;及 一冷卻單元,用以冷卻由該濕式處理單元所產生之 經淨化之氣體以捕捉且凝結出包含在該等經淨化之氣 體中之液體成份。 33. —種廢氣乾式處理裝置,具有一改良加熱室者,且該裝 20 置包含有: 一加熱室,用以形成一預定處理空間; 一歧管,係安裝在該加熱室之上侧處且在其側向上 具有多數廢氣供應孔;及 多數條狀加熱器,係安裝在該歧管之上側且垂直地 68 1272121 安裝在該加熱室之内部。 34·如申請專利範圍第33項之廢氣乾式處理裝置,其中該裝 置更包含-安裝在該歧管上側且垂直地安装在該加熱 室中之溫度測量感應器。 5 35.如申請專利範圍第33或34項之廢氣乾式處理裝置,其中 該等條狀加熱器或溫度測量感應器係由一防止腐钱單 元來保護。 36.如申請專利範圍第35項之廢氣乾式處理裝置, 止腐蝕單元包含: 1〇 一管,係與該等條狀加熱器分開且安裝成可環繞該 等條狀加熱器; 一連接蓋體,具有一與該管之上側連接之氣體供應 孔並與該歧管之上部結合;及 一防止腐蝕氣體,係供應於該管中者。 15 37.如巾請專利範圍第綱之廢氣乾式處理裝置,其中該管 係構成為具有多孔性者。 讯如申請專利範圍第36項之廢氣乾式處理裝置,其中該管 係以陶瓷或金屬製成者。 39·如申請專利範圍第36項之廢氣乾式處理裝置,其中該管 2〇 係以氧化鋁(Al2〇3)或碳化矽(SiC)製成者。 40.如申請專利範圍第36項之廢氣乾式處理裝置,其中該防 止腐蝕氣體是N2、〇2、空氣、氏與取之其中一種,或 其組成物。 41·如申請專利範圍第33項之廢氣乾式處理裝置,其中該加 69 1272121 熱室更包含一在其中之保護壁,且該防止腐蝕氣體係供 應至該加熱室與該保護壁之間。 42. 如申請專利範圍第41項之廢氣乾式處理裝置,其中該防 止腐蝕氣體是N2、02、空氣、出與!^之其中一種,或 5 其組成物。 43. 如申請專利範圍第33項之廢氣乾式處理裝置,其中該加 熱室更包含一在其中之保護壁;且 其中一冷卻管環繞在該保護壁之外部上以產生一 冷卻流體流,且一隔熱構件插入該加熱室與該保護壁之 10 間。 44. 如申請專利範圍第33項之廢氣乾式處理裝置,更包含一 脈衝單元,該脈衝單元安裝在該歧管之上側且可週期性 地供應該等氣體至該廢氣供應孔之上側,而在該廢氣供 應孔之上側處,通過該廢氣供應孔之廢氣之流速相對地 15 降低。 45. —種廢氣處理裝置,包含有: 一加熱室,係在其上與下端處具有多數進入孔以形 成一用以收納廢氣之預定空間’以處理由半導體製造設 備排出之廢氣; 20 一加熱器,用以形成一將該等廢氣加熱至一預定溫 度之處理條件;及 一屏蔽單元,係安裝在該加熱室之内部以防止該加 熱室由於該等廢氣之高溫與該加熱器之熱所產生之反 應而被腐I虫。 70 1272121 46.如申請專利範圍第45項之廢氣處理裝置,其中該屏蔽單 兀包含一内室,該内室係安裝在該加熱室中且與該加熱 室分開;及 一防止腐敍氣體,係在該加熱室與該内室之間流 動。 47,如申請專利範圍第恥項之廢氣處理裝置,其中該防止腐 蝕氣體是非腐蝕性之叫、〇2、空氣、%與He之其中一 種0 10 15 20 48·如申請專利範圍第恥項之廢氣處理裝置,其中該内室之 一端與該加熱室之一端係透過一在相同直線上之凸緣 構件之媒介來結合;且 该凸緣構件具有一用以將該防止腐蝕氣體供給至 邊内室與該加熱室之_氣體進人孔,且由該氣體進入 孔供應之防止腐蝕氣體流出並通過形成在該加熱室之 下側處之孔。 49·如申请專利範圍第46項之廢氣處理裝置,其中該内室之 而4加熱至之一端係透過一在相同直線上之凸緣 構件之媒介來結合; °亥内至之另一端具有一用以屏蔽該加熱室與該内 室之通道的分隔構件; 該凸緣構件具有—用以供應與抽出在該加熱室與 該内室之間之氣體的氣體入口/出口孔;且 该軋體出口孔設有—壓力計與—間單元,用以測量 供應在該加熱室與内室之間之氣體的屡力,以便在該屢 71 1272121 力成為一預定值時開啟該通道。 50. —種廢氣處理裝置,具有一改良冷卻結構,該裝置包含 有: 一乾式處理單元,用以加壓與氧化在一熱環境氣體 5 中之廢氣以將該廢氣相改變成粉末相; 一冷卻單元,由具有一凸緣之中空管構成,該凸緣 具有一與該乾式處理單元之下部流體性連通並且收納 冷卻水且如果在充滿狀態時可溢流至其内部之冷卻水 收納槽;及 10 一氣體供應單元,用以供應已預熱至一預定溫度之 氣體至該冷卻水溢流之上部。 51. 如申請專利範圍第50項之廢氣處理裝置,其中該氣體供 應單元包含一安裝在該乾式處理單元中之氣體供應 管,以形成一可使該等氣體朝向與該等廢氣之排出方向 15 相同之方向流動的通道。 52. 如申請專利範圍第50項之廢氣處理裝置,其中該氣體供 應單元包含一以中空狀態形成之氣體收納槽,用以在其 上表面處收容該等氣體;及一具有一氣體供應孔之氣體 供應板,而該氣體供應孔與該氣體收納槽流體性地連 20 通,且該等氣體係由該氣體供應板之側向來供應。 53. 如申請專利範圍第50項之廢氣處理裝置,其中該氣體是 N2、〇2、空氣、Ar與He之其中一種,或其組成物。 54. 如申請專利範圍第50項之廢氣處理裝置,更包含一安裝 在該冷卻水收納槽之上側處且用以防止溢流通過該冷 72 1272121 却水收納槽之冷卻水分散至該乾式處理單元。 55·如申睛專利範圍第5〇項之廢氣處理裝置,其中該冷卻水 收納槽包含至少一冷卻水供應孔,該冷卻水供應孔係形 成為使一冷卻水抽出孔指向該冷卻水收納槽之圓周方 向,且該冷卻水供應孔與一冷卻水供應導管連接。 56·如申請專利範圍第55項之廢氣處理裝置,其中該冷卻水 供應孔之外徑小於該冷卻水收納槽之寬度。 57.如申請專利範圍第55項之廢氣處理裝置,其中該冷卻水 供應孔係安裝有多數個且該等冷卻水抽出孔之方向是 相同的。 58·如申請專利範圍第55項之廢氣處理裝置,更包含一用以 使該冷卻水產生脈衝且安裝在該冷卻水收納槽或該冷 卻水供應導管之底部的脈衝單元。 59.如申請專利範圍第5〇項之廢氣處理裝置,其中該冷卻單 元之管具有纟直徑沿著該管向下減少以形成一傾斜構 形之形狀。 73The device further includes: a degree, and a dehumidification portion, which is installed between the discharge hole and the exhaust gas treatment device to reduce the wet pretreatment exhaust gas discharged from the discharge hole 61 1272121 At the outer wall of the dehumidification section. 5. The exhaust gas wet pretreatment apparatus of claim 4, wherein the dehumidifying section comprises a gas pressurizer for injecting the pressurized low humidity gas into the dehumidifying section. 5 6. A compound wet pretreatment apparatus comprising a plurality of exhaust gas wet pretreatment apparatus according to any one of claims 1 to 3. 7. The dual-type wet pretreatment apparatus according to claim 6, further comprising: a dehumidifying portion installed between the discharge hole and the exhaust gas treatment device 10 to reduce the wet pre-discharge discharged from the discharge hole The humidity of the exhaust gas is treated; and a heat insulating member is installed at the outer wall of the dehumidifying portion. 8. The dual-type wet pretreatment apparatus according to claim 7 further comprising: a pre-storage tank for accumulating the pollutants discharged from the discharge hole before discharging to a storage tank; a retainer for filling the pre-storage tank with the reactants when operating the multiple wet pretreatment apparatus; and a pre-sump pressurizer for injecting pressurized gas into the pre-storage tank. The double wet pretreatment apparatus according to claim 7 or 8, wherein the dehumidifying portion further comprises a gas pressurizer for injecting pressurized low-humidity gas into the dehumidifying portion. 10. A method for wet pretreating exhaust gas at a front end of an exhaust gas treatment device, the method comprising the steps of: 62 1272121 feeding waste gas to a reaction portion; feeding a particulate sprayed reactant into the a reaction portion; reacting the exhaust gas with the particulate sprayed reactant by a cyclone effect in the reaction portion; 5 discharging the wet pretreatment exhaust gas to a discharge hole; and flowing the pollutant to the Release hole. 11. The method of claim 1, wherein the particulate sprayed reactant is at least one of a diluted solution of a chemical such as normal neutral water, tap water, Na〇H or Ca〇H2, and at least one of the electrolyzed water. Made in one. The method of claim 10, wherein the step of feeding the particulate sprayed reactant into the reaction portion comprises passing a flow range by spraying nitrogen gas having a flow rate ranging from 5 to 201 pm. The step of spraying in a generally neutral water particle size of from 1 Torr to 300 cc/min. 13. The method of claim 10, before the step of flowing the contaminant to a discharge 15 hole, further comprising the steps of: reducing the humidity of the wet pretreated exhaust gas discharged to the discharge hole; and heating The wet pretreated exhaust gas having reduced humidity. 14. The method of claim 13, wherein the heating step comprises: utilizing a heat insulating member for maintaining a range of about 50 to 200 ° C to heat the wetted pretreatment having reduced humidity Exhaust gas. An exhaust gas treatment device comprising: - a pretreatment unit for supplying a water-soluble gas and removing a package of water-soluble gas in an exhaust gas from a semiconductor manufacturing facility; 63 1272121 a dry processing unit for transmitting The pretreatment unit oxidizes the untreated exhaust gas by heating to a predetermined temperature; a wet pretreatment unit for dissolving the unreacted exhaust gas not treated by the dry processing unit and capturing the fine powder; 5 a wet type a processing unit for receiving the untreated exhaust gas and the fine powder through the wet pretreatment unit and spraying a predetermined solvent to dissolve the exhaust gas, and collecting the fine powder through a collection filter; and a discharge unit for using The 10 solvent mixed with the powder treated by the pretreatment unit, the wet pretreatment unit and the wet treatment unit is removed. 16. An exhaust gas treatment method comprising: a pretreatment step of supplying a water-soluble gas to a passage through which exhaust gas supplied from a semiconductor manufacturing facility passes and removing water-soluble gas contained in the exhaust gas; 15 a dry processing step of producing a powder by heating the untreated exhaust gas supplied from the pretreatment step to a predetermined temperature; a wet pretreatment step of capturing the untreated fine powder passing through the dry treatment step by Filling a porous cylindrical tube in which a filler is dissolved and rotated to be immersed in the water-soluble solvent 20 at one end thereof; and a wet processing step is to dissolve the exhaust gas and to accommodate the exhaust gas The fine powder was collected by treating the exhaust gas with the fine powder passing through the wet pretreatment step and spraying the solvent. 17. An exhaust gas treatment device comprising: 64 1272121 a heating chamber 'for heating exhaust gas to change its chemical characteristics; and /"P early 7L, #, communicating with the heating chamber to cool the heating chamber The purified gas captures the liquid components contained in the purified gas and causes the liquid components to condense. 18· An exhaust gas treatment device comprising: a heat chamber for heating a mixed gas mixed with exhaust gas and an inert gas and air to transform its chemical characteristics; and a morning processing unit and the heating chamber Connected to perform water treatment and accumulate dust particles generated in the heating chamber; and, however, to cool the read by the wet processing unit, to capture the inclusions in the The body composition of the purified gas. 19. The exhaust gas treatment device of claim 17 or 18, wherein the cooling unit comprises a conduit structure mounted to surround the purified gas. The exhaust gas treatment device of claim 19, wherein the cooling pipe is connected to a cooling tank to circulate the cooling water. The exhaust gas treatment device of claim 19, wherein the cooling pipe U is cooled to connect the cooling water through a heat exchanger and is circulated by another cooling pipe directly connected to a cooling tank. 22. The exhaust gas treatment device of claim 17 or 18, wherein the chilling unit comprises a piping structure installed through the purified gas. The gas treatment device of claim 22, wherein the cooling pipe 65 1272121 is connected to a cooling tank to circulate the cooling water. 24. The exhaust gas treatment device of claim 22, wherein the cooling tube is coupled to a cooler such that the cooling water passes through a heat exchanger and is circulated by another cooling tube directly connected to a cooling tank. 5. The exhaust gas treatment device of claim 17 or 18, wherein the cooling unit is coupled to a freezer such that the cooling water circulates between the freezer and the cooling unit. 26. An exhaust gas treatment device comprising: a heating chamber for heating a mixed gas of exhaust gas, inert gas and air 10 to convert its chemical characteristics; a wet processing unit connected to the heating chamber Performing water treatment and accumulating dust particles generated in the heating chamber; and a liquid separating/cooling unit for absorbing a flow rate of the purified gas discharged from the wet processing unit to separate the liquid component from the 15 The purified gas is cooled and the purified gas is cooled to capture and condense the liquid components contained in the purified gas. 27. The exhaust gas treatment device of claim 26, wherein the liquid separation/cooling unit comprises: a cyclonic separation liquid separator, wherein the purified gas enters from a side of 20 and is discharged to an upper side; and a cooling die a set, installed in the liquid separator, and including an inner tube and a tube disposed in coaxial relationship with the inner tube to form a closed space between the inner tube and the outer tube, and cooling therein Water circulates through the confined space. 66 1272121. The exhaust gas treatment device of claim 26, wherein the liquid separation/cooling unit comprises: a cyclonic separation liquid separator, wherein the purified gas enters from one side and is discharged to the upper side; and 5 The cooling module has a cover formed such that the cooling module is uniformly separated from the entire outer surface of the body of the liquid separator to form a closed space therebetween, and wherein cooling water circulates through the sealed space. 29. The exhaust gas treatment device of claim 26, wherein the liquid separation/cooling unit comprises: 10 a cyclonic separation liquid separator, wherein the purified gas enters from one side and is discharged to the upper side; The module is installed in the liquid separator and includes an inner tube and a tube disposed coaxially with the inner tube to form a closed space between the inner tube and the outer tube, and wherein Cooling water passes through the closed space through the 15th ring; and a second cooling module, wherein a cover is formed to uniformly separate the second cooling module from the entire outer surface of the body of the liquid separator to form a seal therebetween Space, and wherein cooling water circulates through the enclosed space. The exhaust gas treatment device of claim 26, wherein the liquid separation/cooling unit comprises: a cyclonic separation liquid separator, wherein the purified gas enters from one side and is discharged to the upper side; The utility model comprises a 67 1272121 pressurized air supply pipe for supplying pressurized air to the body, a hot air discharge pipe for discharging hot air and a cooling air discharge pipe for discharging the cooling air; and a cooling plate The tube is mounted in the liquid separator such that one end thereof is in fluid communication with the cooling water discharge pipe of the scroll and the other end is open 5 . 31. The exhaust gas treatment device of claim 26, wherein the liquid separation/cooling unit is installed in a plurality of stages and is in fluid communication with each other by providing a venting elbow therebetween, thereby actually increasing the passage length. 32. An exhaust gas treatment device comprising: a heating chamber for heating a mixed gas mixed with exhaust gas, an inert gas and air to transform its chemical characteristics; a wet processing unit and a fluidity of the heating chamber Connected to perform water treatment and accumulate dust particles generated in the heating chamber, and use a spray nozzle to spray a water particle of 15 in a predetermined size in a mist state; and a cooling unit for The purified gas produced by the wet processing unit is cooled to capture and condense the liquid components contained in the purified gas. 33. An exhaust gas dry processing apparatus having an improved heating chamber, and wherein the apparatus 20 includes: a heating chamber for forming a predetermined processing space; and a manifold mounted at an upper side of the heating chamber And having a plurality of exhaust gas supply holes in its lateral direction; and a plurality of strip heaters are mounted on the upper side of the manifold and vertically installed in the interior of the heating chamber 68 1272121. 34. The exhaust gas dry processing apparatus of claim 33, wherein the apparatus further comprises a temperature measuring sensor mounted on the upper side of the manifold and vertically mounted in the heating chamber. The exhaust gas dry processing apparatus of claim 33, wherein the strip heater or temperature measuring sensor is protected by a money odour prevention unit. 36. The exhaust gas dry treatment device of claim 35, wherein the corrosion inhibiting unit comprises: a tube separated from the strip heaters and mounted to surround the strip heaters; And having a gas supply hole connected to the upper side of the tube and combined with the upper portion of the manifold; and a corrosion preventing gas supplied to the tube. 15 37. A waste gas dry treatment apparatus according to the scope of the patent application, wherein the piping is constructed to be porous. For example, the exhaust gas dry processing device of claim 36, wherein the pipe is made of ceramic or metal. 39. The exhaust gas dry treatment apparatus of claim 36, wherein the tube is made of alumina (Al2?3) or tantalum carbide (SiC). 40. The exhaust gas dry processing apparatus of claim 36, wherein the corrosion preventing gas is one of N2, krypton 2, air, and a composition thereof, or a composition thereof. 41. The exhaust gas dry processing apparatus of claim 33, wherein the hot chamber of the 69 1272121 further comprises a protective wall therein, and the corrosion preventing gas system is supplied between the heating chamber and the protective wall. 42. The exhaust gas dry processing apparatus of claim 41, wherein the corrosion preventing gas is one of N2, 02, air, and / or a composition thereof. 43. The exhaust gas dry processing apparatus of claim 33, wherein the heating chamber further comprises a protective wall therein; and wherein a cooling tube surrounds the outer side of the protective wall to generate a cooling fluid flow, and A heat insulating member is inserted between the heating chamber and the protective wall 10. 44. The exhaust gas dry processing apparatus of claim 33, further comprising a pulse unit mounted on an upper side of the manifold and periodically supplying the gas to an upper side of the exhaust gas supply hole, At the upper side of the exhaust gas supply hole, the flow rate of the exhaust gas passing through the exhaust gas supply hole is relatively lowered by 15. 45. An exhaust gas treatment device comprising: a heating chamber having a plurality of inlet holes at its upper and lower ends to form a predetermined space for accommodating exhaust gas to treat exhaust gas discharged from the semiconductor manufacturing equipment; And a shielding unit installed inside the heating chamber to prevent the heating chamber from being heated by the heat of the heater due to the high temperature of the exhaust gas The resulting reaction was rotted by I. 70 1272121. The exhaust gas treatment device of claim 45, wherein the shielding unit comprises an inner chamber installed in the heating chamber and separated from the heating chamber; and a gas to prevent clogging, It flows between the heating chamber and the inner chamber. 47. The exhaust gas treatment device according to the shame of the patent application, wherein the corrosion preventing gas is non-corrosive, 〇2, air, one of % and He is 0 10 15 20 48. An exhaust gas treatment device, wherein one end of the inner chamber is coupled to one end of the heating chamber through a medium of a flange member on the same straight line; and the flange member has a function for supplying the corrosion preventing gas to the side The chamber and the gas chamber enter the manhole, and the gas supplied from the gas inlet hole prevents the corrosion gas from flowing out and passes through the hole formed at the lower side of the heating chamber. 49. The exhaust gas treatment device of claim 46, wherein the inner chamber is heated to one end by a medium of a flange member on the same straight line; the other end has a a partition member for shielding a passage of the heating chamber and the inner chamber; the flange member having a gas inlet/outlet hole for supplying and extracting a gas between the heating chamber and the inner chamber; and the rolling body The outlet port is provided with a pressure gauge and an inter-unit for measuring the force of the gas supplied between the heating chamber and the inner chamber to open the passage when the force of the relay 71 1272121 becomes a predetermined value. 50. An exhaust gas treatment device having an improved cooling structure, the device comprising: a dry processing unit for pressurizing and oxidizing exhaust gas in a hot ambient gas 5 to change the exhaust gas phase into a powder phase; The cooling unit is constituted by a hollow tube having a flange having a cooling water storage tank that is in fluid communication with the lower portion of the dry processing unit and houses cooling water and overflows to the inside thereof if in a full state And a gas supply unit for supplying a gas that has been preheated to a predetermined temperature to the upper portion of the cooling water overflow. 51. The exhaust gas treatment device of claim 50, wherein the gas supply unit comprises a gas supply pipe installed in the dry processing unit to form a direction in which the gases are directed toward the discharge direction of the exhaust gases. Channels that flow in the same direction. 52. The exhaust gas treatment device of claim 50, wherein the gas supply unit comprises a gas receiving groove formed in a hollow state for containing the gas at an upper surface thereof; and a gas supply hole A gas supply plate, and the gas supply hole is fluidly connected to the gas receiving groove, and the gas systems are supplied laterally from the gas supply plate. 53. The exhaust gas treatment device of claim 50, wherein the gas is one of N2, krypton 2, air, Ar and He, or a composition thereof. 54. The exhaust gas treatment device of claim 50, further comprising a cooling water disposed at an upper side of the cooling water storage tank to prevent overflow from passing through the cold 72 1272121 but a water storage tank to the dry treatment unit. The exhaust gas treatment device of claim 5, wherein the cooling water storage tank comprises at least one cooling water supply hole formed to direct a cooling water extraction hole to the cooling water storage tank In the circumferential direction, the cooling water supply hole is connected to a cooling water supply conduit. 56. The exhaust gas treatment device of claim 55, wherein an outer diameter of the cooling water supply hole is smaller than a width of the cooling water storage groove. 57. The exhaust gas treatment device of claim 55, wherein the plurality of cooling water supply holes are installed and the directions of the cooling water extraction holes are the same. 58. The exhaust gas treatment device of claim 55, further comprising a pulse unit for pulsing the cooling water and installing at the bottom of the cooling water storage tank or the cooling water supply conduit. 59. The exhaust gas treatment device of claim 5, wherein the tube of the cooling unit has a shape in which a diameter of the crucible decreases downwardly along the tube to form an inclined configuration. 73
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TWI386251B (en) * 2010-06-07 2013-02-21 Macronix Int Co Ltd Local scrubber for processing waste gas and method for processing waste gas
TWI492782B (en) * 2009-02-11 2015-07-21 Edwards Ltd Method of treating an exhaust gas stream
TWI510280B (en) * 2009-05-22 2015-12-01 Daikin Ind Ltd Fluid handling methods, fluid handling devices and fluids
TWI721293B (en) * 2018-07-20 2021-03-11 金索股份有限公司 Dry chemical adsorption treatment device for cyclone dust collection

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US11414757B2 (en) * 2017-11-13 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Gas tube, gas supply system and manufacturing method of semiconductor device using the same
US11779871B2 (en) * 2018-12-21 2023-10-10 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Exhaust module for wafer baking apparatus and wafer processing system having the same
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TWI492782B (en) * 2009-02-11 2015-07-21 Edwards Ltd Method of treating an exhaust gas stream
TWI510280B (en) * 2009-05-22 2015-12-01 Daikin Ind Ltd Fluid handling methods, fluid handling devices and fluids
TWI386251B (en) * 2010-06-07 2013-02-21 Macronix Int Co Ltd Local scrubber for processing waste gas and method for processing waste gas
TWI721293B (en) * 2018-07-20 2021-03-11 金索股份有限公司 Dry chemical adsorption treatment device for cyclone dust collection

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