TWI271264B - Determination method for life/quality of polishing pad or the like, conditioning method of polishing pad, polishing device, semiconductor device and its manufacturing method - Google Patents

Abstract

The technical subject of the present invention is to precisely determine a life of a polishing pad and a life of a conditioner. The thickness of an abrasive pad (311c) used for polishing a wafer (Wd) is measured by a pad thickness measuring device (319). When the thickness is less than a predetermined value, the polishing pad (311c) is determined that the life of the polishing pad (311c) has expired. The polishing pad (311c) is performed conditioning by a conditioner (317b) of a pad conditioning device (317). The thickness of the polishing pad (311c) is measured with the pad thickness measurement meter (319) before and after the conditioning. A mean cutting rate during the time of the conditioning of the conditioning of the polishing pad (311c) is measured based on the thickness of the polishing pad (311c) measured before and after the conditioning. When the mean cutting rate is lower than a predetermined value, it is determined that the life of the conditioner (317b) has expired.

Description

1271264 玖, the invention description: [Technical field of the invention] The present invention relates to a grinding technique, in particular, a method for determining the life of a polishing pad, a method for determining the life of the adjuster, a method for judging the quality of the adjuster, and an adjustment of the polishing pad. Method, polishing apparatus, semiconductor element, and semiconductor element manufacturing method. [Prior Art] A conventional polishing apparatus grinds a workpiece by applying a load between a polishing pad and an object to be polished while relatively moving the polishing pad and the object to be polished. Such a polishing apparatus, for example, a chemical mechanical polishing for the overall planarization of a surface of a semiconductor element wafer or the like (Chemicai)

Mechanical Polishing or Chemical Mechanical Planarizati〇n, hereinafter referred to as CMp). CMp is a step of physically polishing and using a chemical action (dissolving with an abrasive or a solution) to remove surface irregularities of the wafer, and using a polishing agent called a slurry to pressurize the surface of the wafer with a suitable polishing pad. The relative motion is performed to perform the grinding, thereby uniformly grinding the wafer surface. In such a polishing apparatus, the polishing surface of the polishing pad is deteriorated due to the clogging phenomenon due to the grinding time, so it is maintained in a regular adjustment (also called dressing) to maintain good processing. This adjustment is made by abutting both the polishing surface of the polishing pad and the adjustment surface of the adjuster (also referred to as the adjustment tool or the dressing tool) so that the polishing pad and the adjuster move relative to each other 1271264. The adjuster is, for example, a tool formed by using an entire annular or circular adjustment surface covered with abrasive grains such as diamond particles. This relative movement is performed, for example, by rotating both the polishing pad and the adjuster. The thickness of the polishing pad is consumed by polishing the workpiece such as a wafer, or is consumed by the adjustment, and is gradually thinned, and finally the desired polishing property is not obtained, and the life is not obtained. run out. Therefore, the grinding pad must be replaced with a new one. Therefore, up to now, the cumulative time of grinding by grinding, the cumulative time of adjustment, the number of ground objects to be ground, or the number of adjustments: the number of underages, to the life of the polishing pad : Replace the grinding raft with a new one. X, Lt is polished, and sometimes it is replaced by hand. There is also a device for automatically replacing the polishing pad (for example, σ, JP-A-20 01-148361). In addition, the (four) whole is recorded, and the holder of the adjuster is generally used.哕 敏 敏 々 々 々 々 々 々 々 々 々 ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... ...... Tian Hao, can be used up. The sentence uses the adjuster to adjust the life of the accumulator, the judge, the custodian or: the number of people to determine the adjuster. Also, the new material ... 4 will adjust the benefits Replace with newness, so - used directly (4) ^ 'Because, the seat has the desired adjustment for the adjustment of the polishing pad, and further, to the special check of the eight isolated. 7 'Adjustment of the polishing pad A certain number of objects to be polished are carried out, and the mother is polished by grinding. The mothers are all subject to the same adjustment conditions. [Summary of the Invention] 1271264 (,) ^ The technical problem to be solved is known to be the life of the grinding crucible. The 敎 method uses the grinding or ° or the number of times to determine the life of the polishing pad, so it is impossible to correctly determine the life of the polishing pad - LI has retained a considerable margin, even if it is still 3 (being smashed) q % ^ Υ _ pattern is enough for the desired grinding characteristics, but quite early刖 It is judged that the I and p ^ of the polishing pad can be replaced with a new polishing pad by 7 〇 '. Therefore, the cost of the grinding device and the cost of the polishing device are increased. Also, if the sufficient margin is not retained, the grinding is determined as early as possible.塾之軎 Today ^ ^ can be used for the use of the element, it will not be able to correctly determine the life of the polishing pad, even if the polishing pad, 1 heat, the desired grinding characteristics, still grind the object, the helmet method The result of the "grinding of the object to be polished" is good. The method for judging the life of the conventional adjuster is to determine the life of the adjuster by adjusting the time between the adjustments and the second time. Determine the life of the regulator. Therefore, in fact, it retains a considerable margin, even if it can still obtain enough desired adjustment characteristics, but it is quite long ago that the life of the regulator has been used up and replaced with a new regulator. Therefore, the operating cost of the grinding I is increased. χ, if the sufficient margin is not reserved, it is determined that the life of the adjusting device has been exhausted as early as possible, and the life of the regulator cannot be correctly determined, even if the regulator cannot be obtained. As a result of the desired adjustment characteristics, the polishing pad is still adjusted, and as a result, the polishing pad cannot exhibit the desired polishing characteristics, and the object to be polished cannot be accurately polished, resulting in undesirable results. Furthermore, it has been known that the new regulator is not necessarily Often, it has the desired adjustment characteristics. For example, in the case of a new regulator, the cutting ability produced by abrasive grains and the like is too high, and the grinding surface of the 1271264 grinding pad is excessively over the recovery stage of the abrasive pad blocking of the polishing pad. Roughness, the adjusted polishing pad can not exert the grinding characteristics of the stalk. Therefore, as in the prior art, if the new έ 整 器 才 而 而 用于 用于 用于 用于 用于 用于 用于The pad will not be able to exert the desired polishing characteristics, and the object to be polished cannot be accurately polished, which may result in undesirable effects. However, there is still no effective way to judge the quality of the new regulator. Further, the adjustment of the conventional polishing pad is carried out after polishing a predetermined number of objects to be polished by the grinding burr as described above, and each time is carried out under the condition of aging. However, the adjustment surface of the adjuster is gradually consumed, so the state of the polished surface of the adjusted polishing pad is gradually changed. Therefore, the polishing state of the object to be polished caused by the polishing pad changes for each of the objects to be polished, which is not preferable. The present invention has been made in view of such a problem, and an object of the present invention is to provide a method for determining the life of a polishing pad which can accurately determine the life of a polishing pad. The object of the present invention is to provide an oddity for correctly determining the regulator. The life determination method of the life adjuster. The object of the present invention is to provide a method for judging the quality of a regulator that can properly determine whether a new tone is good or not. Further, it is an object of the present invention to provide a polishing pad which is polished in the same manner and which can reduce the running cost. It is an object of the present invention to provide a polishing apparatus. Further, it is an object of the present invention to provide a polishing apparatus which can grind each workpiece 1271264 in the same manner. Further, an object of the present invention is to provide a semiconductor device manufacturing method capable of manufacturing a semiconductor element at a low cost and a low-cost semiconductor element as compared with a conventional semiconductor element manufacturing method. (2) Technical means for solving the problem In order to solve the above problems, the method for determining the life of the polishing pad according to the first aspect of the present invention is for determining the life of the polishing pad for polishing the object to be polished, and measuring the thickness of the polishing pad. If the thickness of the measured polishing pad is thinner than the predetermined value, it is determined that the life of the polishing pad has been used up. The method for determining the life of the adjuster according to the second aspect of the present invention is for determining the life of the adjuster used for adjusting the polishing pad for polishing the object to be polished; and adjusting the cumulative adjustment time of the grinding device by using the adjuster; After the adjustment of the time, the thickness of the grinding crucible is measured; the average cutting rate in the cumulative adjustment time of the grinding crucible is obtained according to the thickness of the grinding crucible measured before the adjustment of the cumulative adjustment time; if the average is determined If the value is low, it is determined that the life of the regulator has been used up. The method for judging whether the adjuster of the third aspect of the present invention is used for determining the adjustment of the grinding burr for grinding the object to be ground is used to adjust the cumulative adjustment time of the polishing pad by using a new adjuster; = «The thickness of the grinding (4); the average cutting in the cumulative adjustment time of the polishing pad according to the thickness of the grinding flaw measured before the adjustment between the cumulative adjustment h - outside the established range, it is determined that the new regulator is defective . "Average cutting rate The method for adjusting the grinding flaw of the fourth aspect of the present invention is for adjusting the polishing pad for grinding the object to be polished by adjusting the 1271264; adjusting the polishing pad at least once using the adjuster; The thickness of the grinding crucible is measured before and after the adjustment of one time; the average cutting rate of the polishing pad at least one adjustment is determined according to the thickness of the grinding crucible measured after at least one adjustment, according to the average cutting rate, The adjustment condition for the next adjustment of the adjustment of at least one time is set; the next adjustment is performed according to the adjustment condition completed by the setting. • The adjustment method of the polishing pad according to the fifth aspect of the present invention, as in the fourth aspect, Where 'the adjustment condition is the adjustment time. According to a sixth aspect of the present invention, in the polishing apparatus of the sixth aspect, the polishing pad and the object to be polished are relatively moved while applying a load between the polishing pad and the object to be ground, thereby polishing the object to be polished; And if the thickness of the polishing pad measured by the measuring unit is thinner than a predetermined value, a mechanism is proposed to replace the polishing pad with a new polishing pad, or a mechanism for automatically replacing the polishing pad with a new one. A polishing apparatus according to a seventh aspect of the present invention, wherein a polishing pad and a workpiece are relatively moved while applying a load between the polishing pad and the object to be polished, thereby polishing the object to be polished; and having an adjustment portion having an adjuster The polishing pad is adjusted by the adjuster, and the measuring portion measures the thickness of the polishing pad at the first timing and the second timing thereafter; the calculation unit is based on the thickness measured at the first timing and the thickness measured at the second timing. The average cutting rate in the cumulative adjustment time of the polishing pad generated by the adjuster during the second timing from the second timing to the second timing, and if the average cutting rate is lower than the predetermined value, the regulator should be replaced with a new one. The mechanism of the alarm, or the mechanism that automatically replaces the adjuster with the new 1271264 adjuster. In the polishing apparatus according to the eighth aspect of the present invention, the polishing pad and the object to be polished are relatively moved while applying a load between the polishing pad and the object to be polished, thereby polishing the object to be polished, which has an adjustment portion and has an adjustment , with the adjuster; i polishing pad, measuring part, the new adjuster is installed in the adjustment part, and the new adjustment f is used for the first time before the adjustment of the polishing pad, and after the new adjustment of the core polishing pad is used later帛2 timing, measuring the thickness of the polishing pad; the calculation unit 1 adjusts the thickness according to the thickness measured by the 帛14 machine and the degree of measurement measured at the second timing to adjust the timing to the second timing The average cutting rate in the cumulative adjustment time of the resulting polishing pad; and if the average cutting: in the established range, the mechanism that should further replace the regulator with the alarm of the new regulator, or automatically replace the regulator with The apparatus of the ninth aspect of the present invention provides a polishing apparatus according to a ninth aspect of the present invention, wherein the polishing pad and the object to be polished are relatively moved while applying a load between the polishing pad and the object to be polished, thereby polishing the object to be polished; unit, With a regulator to adjust the polishing pad; the measuring part, the thickness of the pad is measured at the second moment of the Russian and the Japanese; the thickness measured at the first time and the I measured at the second time Acoustic:,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, And the adjustment condition setting unit, the (4) of the root pad (a) the average cutting rate of the material is used to set the adjustment condition of the next adjustment after the grinding 蛰. A grinding apparatus according to a tenth aspect of the present invention, as in the ninth aspect, wherein the adjustment condition is an adjustment time. Μ 1271264 The polishing apparatus according to the eleventh aspect of the present invention, wherein the polishing pad and the object to be polished are relatively moved while applying a load between the polishing pad and the object to be polished, thereby polishing the object to be polished; Having an adjuster for polishing a predetermined number of objects to be polished by a polishing pad, that is, adjusting the polishing pad with an adjuster; measuring the thickness of the polishing pad at the first timing and the second timing after the first time; and The thickness measured at the timing and the thickness measured at the second timing are used to limit the number of objects to be polished to be polished after the second timing to the number of objects to be ground. A mechanism in which the thickness of the polishing pad is not less than a predetermined number. A method of manufacturing a semiconductor device according to a twelfth aspect of the present invention, comprising the step of planarizing a surface of a semiconductor wafer using a polishing apparatus according to any one of claims 6 to 5. According to the first aspect of the present invention, the invention is made by the semiconductor component manufacturing method of the 12th patent application. [Embodiment] Hereinafter, a description will be given of a life determining method for a life determining side of a polishing pad of the present invention, a method for judging a good or bad of a adjuster, a grinding shoulder = an adjusting method, a grinding device, a semiconductor element, and a semiconductor (Fourth) The embodiment of the present invention is a schematic plan view of the present invention. Figure 2 shows the R唧鲳 display

...u A schematic plan view of the wafer of the polishing apparatus 1 of Fig. 1. image 3

A schematic cross-sectional view of the main elements of the i-th polishing stage, which is located on the polishing wave set i of Fig. 1, is not considered to be from the reverse side J 12 1271264. Further, in the drawings, the grinding condition monitoring device 5A will be omitted in Fig. 2. The present invention is an example of a cMp device which performs precision flat polishing on a polishing process of a semiconductor wafer as a semiconductor wafer to be polished. As shown in FIG. 1 and FIG. 2, the polishing apparatus 1 is generally composed of a cartridge indicator unit 100, a wafer cleaning unit 2, and a polishing unit 3, and each of the hearts is separated to form a clean room. (ciean chamber). Further, an automatic opening and closing gate can be provided between the respective rooms. The cassette indicator unit 100 is composed of a wafer stage 120 and a first transfer robot 150. The wafer stage 12 is placed on an E-box (also referred to as a carrier) C1 to C4 for holding a plurality of wafers. The i-th transfer robot arm 150' takes the unprocessed wafer out of the box and moves it into the washing unit 2 & $ machine temporary table m 'and' will be polished in the wafer cleaning department The processed wafer is stored in a cassette. The first transport robot 150 is a multi-joint arm type robot arm 4 having two multi-joint arms 153a and 153b, and is mounted on the base ΐ5i and the turret 152 which can be horizontally swung and lifted on the base 151. Two multi-joint arms 153a, 153b on the gyro 152 are attached to the front end of each of the multi-joint arms 153a, 153b so that the arm 155a and the B arm 155b (B arm 155b) are attached to each arm. The lower side of the 155a is arranged in a 'offset position' in FIG. 1 and FIG. 2 'overlapped up and down'. The front end of the a-arm 155a and the B-arm 155b forms a holding portion for placing and holding the wafer 13 1271264. Further, in the base A^ μ port 5, there is a linear moving device which can move horizontally along the linear guide rail 160 disposed on the ground. The transfer robot 22 is transported by the robot arm 150 along the linear guide rail (10). The front side of the mountain is used to make the rotary table 152 horizontally swing and lift the section i, and the Ge-β arm 155b is moved to the target slot height to make the multi-level two. The arm 155a, or the multi-joint arm 15 megahertz and the β-arm 1551) are: "55& or the holding portion of the front end of the beta arm i55b adsorbs and removes the unprocessed wafer in the target crucible, or the processed wafer It is stored in the target slot. The two pairs of arms i55a, which are arranged in the direction of the shift, can be used for taking out or storing any arm. The 355 is used for the purpose of the two-purpose construction. The grinding device shown in the figure is used to remove the Bf from the side below the 0, and the Bf will be taken out from the cassette, and the cleaning force will be worn by the base θ m , , and the day after day The upper arm 155a is housed in each of the cymbals. The 220 wafer f clean unit 200 is composed of a first cleaning chamber (10), a second cleaning chamber, a third cleaning chamber 230, and a drying chamber 24, four chambers. , grinding ^ finished round, is washed in the second 丨 t 21 (^ 2nd cleaning room 22 〇 先 至 to 230_ " drying room 24 〇 in order to wash in order to wash The slurry or polishing liquid adhered to the processing unit 300 is polished and consumed (4). For example, 'in the second cleaning chamber 21, the two sides are rubbed with a rotating brush', and the second cleaning chamber 22 is ultrasonically oscillated. The surface pen type cleaning is performed by spin cleaning in pure water from the third wash to the 23rd, and drying in a nitrogen atmosphere in the dry room state. Further, the unprocessed wafer before the polishing process is not subjected to the above. The cleaning step ′ is carried out from the cassette index 胄 100 through the cleaning 14 1271264 'the opening 211 through the wafer cleaning unit 200 into the wafer polishing unit 3 〇〇〇 polishing 300, and has an index table 340. Divided into 4 parts, it is operated by the two-input motor every 90. It is rotated and fed-time; and the first polishing t 31G * 2 polishing stage 320, third grinding stage 33G, and carrying port 350, basin The slanting position of the slanting slabs y, w, 曰 台 340 is set to surround the 曰 曰 340 from the outer 3 (five) weeks; and the carrying platform 350 is used to carry the ot n 340 Machining the round and moving the finished wafer out. The grinding stage is sometimes called the grinding area or the grinding chamber. Each area of the index table 34 is arranged to expose the collet VI~V4 which is held by the crucible from the back side, and each collet~V4' is supported at the index table 340 to be in a horizontal plane (Fig. 1) Medium blood paper level <dry $%+ ', 〇4f) . ^Transfers freely, and is installed to be able to rotate and keep stopped at a high speed by a drive mechanism such as an electric power, ... or air motor provided inside the indicator table 3411 t _ , the diameter of the chucks V1 to V4 is formed to be slightly smaller than the wafer crucible <7 stalking to hold the outer peripheral end of the wafer held by the chucks V1 to V4. Each of the three polishing stages of the first stage, the third stage 33, the second polishing stage 320, and the third polishing stage is provided, and is swingable in the horizontal direction from the index stage 34〇. The 321 33i Q and the grinding arm that moves up and down in the vertical direction are as shown in Fig. 3; 叮 No, at the front end of the grinding arm 311, the grinding arm 311 is suspended from the grinding arm 311 to be able to rotate at a high speed in the horizontal plane. The polishing head 311a has a polishing I 311c as an abrasive body which is pulled by the relative rotation of the wafer to polish the wafer. In the present embodiment, the polishing crucible 3Hc is attached to the mounting plate 3Ub, and the mounting plate 3m is held by the polishing head 3Ua, and the polishing pad 3Uc is overwritten, and the pad 3Uc is replaced by a pad described later. I is set to 318, and is automatically replaced with the support member 3Ub_. Such a polishing head 3lla and a cymbal replacement device 318 can be, for example, those disclosed in Japanese Laid-Open Patent Publication No. 61. Although not shown in the drawings, a polishing head capable of rotating at a south speed in a horizontal plane is attached to the front end of each of the polishing arms 321, 331 from the grinding arm 32i 33i, and the lower end surface thereof has a crystal The polishing of the wafer is performed by polishing the wafer 平坦0 〜 0 as a polishing body with a relative rotation of the circle. As shown in FIGS. 1 and 2, the polishing pad is mounted on each of the polishing stages 31〇, 32〇, 33〇'. The thickness of the pad is measured by i 319, 329, 339 '«The pad of the polishing pad is adjusted to be 31,327,337, and the pad replacement device 318,328,338 is automatically replaced. In the present embodiment, as shown in Fig. 3, the pad thickness measuring device 319 uses a commercially available contact stylus type displacement gauge, and the stylus 319a contacts the polishing surface of the polishing pad 311c and corresponds to the height of the polishing surface to make the stylus 319 & sliding along the radial direction of the polishing pad 31 lc, whereby the thickness distribution in the half direction of the polishing pad 3Uc can be measured. In the present embodiment, the thickness of the polishing pad 311c is an average value (may be a maximum value or a minimum value) of the thickness distribution in the radial direction of the gripping pad. Therefore, the thickness distribution in the radial direction of the polishing pad 311c is measured, but for example, Only the thickness of one point of the abrasive surface of the polishing pad 31 lc is measured. Further, the pad thickness measuring device 31 9, for example, may use an optical displacement meter instead of the contact stylus type displacement meter. The thickness measurement device i 329, has the same configuration as the 16 1271264 pad thickness measuring device 319. Further, in the embodiment, the pad adjusting device 317 is provided with a bad shape adjusting surface 317a (the ring-shaped diamond whole device 317b, the retaining adjuster 317b, the retaining member 317c, and the adjuster holding The rotating mechanism (4) for rotating the member 317e, the polishing surface of the polishing crucible 3Uc is gripped, weighted, and rotated respectively to adjust the polishing surface of the polishing pad 3Uc. The pad adjusting device 327, H system and 塾The adjusting device 317 has the same configuration. In the present embodiment, the adjuster of the mounting device S 3i7, 327, and 337 can be replaced by the operator by hand, but the same as the % of the polishing pad A F1 ladder + Μ 蛩The adjuster replacement device for automatically changing the adjuster can also be set. 研磨 Each grinding arm and chuck, thickness measuring device, pad adjusting device and pad changing device on 31G, 32(), 33G are located. The relative position is defined by the grinding head of the grinding head at the tip end of the grinding arm. Therefore, for example, when the first grinding stage 310 performs the grinding process, the polishing arm 311 is swung to move the polishing head to the chuck V4 to be ground. Head and chuck n Rotating and lowering the grinding arm 311 to press the polishing pad against the wafer to perform the grinding process. Further, during the grinding process, the polishing agent (slurry) is interposed between the polishing pad and the wafer. In the final stage of the polishing process, after the polishing agent on the object to be polished is washed by a water supply device (not shown), for example, the chuck is rotated to remove moisture. The polishing process is completed, and the polishing arm 311 is slightly raised. At this time, the grinding machine 3 is oscillated by a timer which will be described later, and the thickness of the polishing pad is measured by the thickness measuring device 319, and the number of the polished holes is 17 !271264 (that is, the mother wafer) The number of the sheets is further oscillated by the polishing arm 31 1 to be trimmed (adjusted) by the pad adjusting device 317 to correct the abrasive grain resisting base or the abrasive grains of the polishing pad 311c, and the grinding arm 311 is further oscillated at a timing to be described later. The polishing pad 311c is moved above the pad replacing device 318, and the polishing pad 311c is automatically replaced by the device. An arm position detector (not shown) for detecting the swinging angle of the arm is attached to the polishing arm 311 for inspection. The grinding processing position of the grinding arm 311, the position of the pad 2: position, the adjustment position, and the pad replacement position are measured. Further, in each of the mortar stages, the grinding condition of the wafer to be ground is optically monitored as shown in FIG. The polishing condition monitoring device 5A' can immediately detect the film thickness reduction state in the polishing process, etc. The polishing condition monitoring device 5Ga' can use, for example, the device disclosed in Japanese Laid-Open Patent Publication No. 2GGG-40680. In the middle, the polishing condition monitoring device 5〇a' has a 'extending parallel to the polishing arm of each polishing stage, and is capable of horizontally: swinging freely. 6 Arms 61 are embedded in the arm 61, and the front end of the arm 61 is provided. The part locally irradiates the probe light on the wafer held by the chuck and in the grinding process, and receives the reflected light from the 曰 ^ ^ ^ harvesting wood and then guides it to a predetermined place. The arm sill is designed to avoid mechanical interference with the grinding arm, and is oscillated by grinding and W H . In the present embodiment, the polishing condition monitoring device a monitors the polishing state based on the reflected light from the wafer obtained when the front end portion of the arm 61 is on the wafer. The configuration and actuation 'is the same in the second polishing stage 320' of the third polishing stage 303. ; &, loading Ό 350 equipped with a second transport robot 360 and 3 18 1271264 = mechanical arm 37 〇. The second transport robot f 36G is a multi-joint arm type robot arm that is the same as the above-described robot arm 150, and is mounted on the swing table 362 by horizontal rotation and lifting motion to swing from the two-way multi-level That is, f 363a, 363b, and each of the multi-joint arms, 363b is mounted on the arm of the telescopic armor "B and B arm coffee. The Af 365aAB arm is difficult to be placed up and down, and the two arms 365a' The front end of the 365b is formed with a holding portion for holding and holding the wafer. The younger d transport robot arm 370 has a swing arm that swings in the horizontal direction with respect to the index table 34 and moves up and down in the vertical direction. 371,, at the front end of the swing arm 371, the swing arm 372 is attached to the swing arm 371, and is suspended from the swing arm to hold the outer peripheral end of the wafer. A clip 375a and b clip 37讣, etc. A clip 375a and B clip 375b are disposed at the end of the swiveling arm at the same distance from the center of rotation of the swivel arm 372. That is, the state shown in Fig. j indicates the third transport. The standby posture of the robot arm 370, in the figure, the clip 375a and the Β clip are below, respectively The A temporary stage 38A on which the unprocessed wafer is placed and the B temporary stage 382 on which the polished wafer is placed are placed. Therefore, the swing arm 371 of the third transfer robot 37 is tilted and moved. The swing arm 372 is rotated to thereby move the A-clamp 375a or the B-clip 375b to the collet V1 of the index table 34, at which position the swing arm 371 is lowered to a clamp 375a or a β-clip 375b. The wafer is clamped from the outer periphery, or the chuck is placed on the wafer to hold the new wafer. Also, the wafer after the polishing process is loaded with the slurry-containing polishing liquid 19 1271264. The arm and the clip of the wafer after the clip are distinguished. In the upper and lower offsets A, Bf, and 嶋, the A arm 365a defined above is regarded as the loading arm of the unprocessed wafer, and the B arm 365b located below As the carry-out arm, the A-clip 375a is used as a carry-in clip, and the 3-clip 375b is used as a carry-out clip. Next, the operation of the polishing apparatus configured as described above will be described. First, focusing on the flow of the wafer 'Omit the action on pad thickness measurement, pad replacement, adjustment and adjuster replacement The action of the grinding device is explained. The action of pad thickness measurement, pad replacement, adjustment and adjuster replacement will focus on one grinding stage, and then refer to the flow chart for details. An example of this is a wafer before polishing in a polishing apparatus (referred to as a raw wafer in this specification), and the first polishing processing P1, the second polishing processing P2, and the third polishing processing are performed. The polishing process by the CMP of the three stages of P3 is polished to a flat condition. In the following examples, the polishing process ρι, the second polishing process P2, and the third polishing process P3 are performed on the polishing stage 31. The first and second polishing stages 320 and the third polishing stage 330 are separately performed. Further, in the second polishing process P2 and the third polishing process p3, since the polishing end point is detected by the polishing condition monitoring device, the polishing process is temporarily ended. Another aspect, in this case, '帛! In the polishing process in the previous stage of the secondary polishing and the polishing process P2, the end point detection is performed. Therefore, the i-th grinding process is finished by the time management, and ends with a predetermined polishing time tpl. In Fig. 2, the unprocessed 20 1271264 曰曰® wd' set in the box index section 1 is polished in the polishing section paste to form the processed crystal: the wafer is washed. The 20M skin washing process is stored in the wafer flow up to C4 of the box index, and the dotted line and the arrow are attached to the table... In addition, each transport robot arm is 15〇, edited, 37G or indicator table 34〇, cool: n to V4, the grinding arms 311, 321, 331, the polishing head, and the like are controlled by a control unit composed of a personal computer or the like (not shown), and the manufacturing unit is based on a preset control program. Although the operation control is not shown, the polishing apparatus 4 also has a wide area for issuing an alarm to be described later, and an input device for giving various commands and the like by the operator. The ecstasy β ’ can be a warning of the visual and an alarm of the auditory alarm. You can also issue an alert for both types of alarms. First, when grinding the device! When starting the grinding process, the second transport robot moves 15° to the position of the box C1, and the swing table 152 is horizontally swung and lifted, and the 155b is moved to the slot height of the target wafer, so that the multi-joint arm 153bAB The arm is extended to move and hold the unprocessed crystal in the slot at the front end of the 155b to cause the arms to be elongated and pulled out. Further, the revolving table 152 is rotated about the (10) degree toward the wafer cleaning unit 2 (10), and the unprocessed wafer Wd is placed on the cleaning machine temporary stage 211 on the cleaning unit. When the wafer cleaning chamber is 2 〇〇 and the second transport robot 36G of the loading tray 350 is placed, when the unprocessed wafer Wd is placed on the temporary platform, the turret 362 is actuated and swirled. The front end of the A arm 365a is moved toward the washing machine σ 2ii 'the arm 363a and the arm 365a are extended. The holding portion of the arm A is held by the holding portion of the arm A. 21 1271264 Processing wafers Wd〇, when the animal is loaded with soil. When the field 1 shows the unprocessed wafer Wd, the multi-joint arms 363a and 365a are lengthened and the revolving table is rotated back and rotated, and the multi-joint arm 3 and the A-arm 365a are again extended and unprocessed. The wafer Wd is placed on the A temporary stage 381. The unprocessed wafer is placed on the chuck V1 and adsorbed and held. Further, the third transport robot 370 is lifted after the clip is released, and the swing arm 371 and the swing arm 372 are swung and rotated, and the next unprocessed wafer is held by the A clip 375a at a predetermined height. The standby position is on standby until the next indicator is activated. When the unprocessed wafer Wd is placed on the A temporary stage 381, the third transfer robot arm 37" lowers the action to hold the unprocessed wafer with the u 375a, and after holding it, stands by at the standby position where the operation is started up to a predetermined height. Until the positioning of the index table 340 is completed (standby posture). When the index table 34 is positioned and stopped, the 1 1 吏 swing f 371 丨 the rotation f 372 (4) is actuated and rotated, and then the polishing process of the polishing unit 300 is started. The flow of the unprocessed wafer Wd carried in the loading stage 350 from the first polishing stage 31 through the second polishing stage 320 and the third polishing stage 33, and carried out from the transfer stage is as follows. . In addition, the following will be described in the order of time when the battle table is twisted and t-processed, and the rotation of the index table 340 will be sequentially performed on each stage. The new wafer is moved in, and each time the index table 340 rotates, a new processed wafer is carried out on the 'I stage, and the actions of the different wafers are simultaneously parallel. 22 1271264 When the unprocessed wafer Wd is adsorbed and held on the chuck VI, and the third transport robot 370 waits above the index table 34〇, the index table 34 is turned to the right in FIG. 1 and FIG. The hour hand direction is rotated at 9 degrees, and the unprocessed wafer Wd is positioned on the first polishing stage 31 (4 positions in FIGS. 1 and 2). At this time, the grinding arm 311 is moved to move the polishing head. On unprocessed wafers. When the positioning table 340 is stopped, the grinding head and the cooling head π are rotated at a high speed, for example, and the grinding arm 3U is lowered to make the lower end of the polishing head - 'padding & 炙曰曰 rounding' for the second grinding process. The p-grinding plus r μ is supplied to the slurry by the rubbing axis of the grinding head, and the grinding 1 is moved in a small range so that the grinding is reciprocated between the arm of the wafer and the outer portion of the wafer. Round 〇rn, a 曰曰W evenly flat grinding. Moving the carriage In the middle of the grinding process, the new unprocessed wafer is moved into the chuck V2 by the third transport arm 37. In the first polishing stage 31 〇 9 /> time suppression, Μ 弟 2 2: human grinding processing Pi, the above-mentioned 1 & system, when the predetermined grinding t 311 L force 曰 间 t tpl At the time, the grinding, control, and scratching of the ?β ϋ 310 are performed. Then, at the first research institute # y 9払ϋ 340 (that is, if the 隹 丄 丄 丄 丄 丄 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 , , , , , , , , , , , , , , time. If you can do the indicator table 340, right to 9〇. In the rotation operation, the second index and the "deuterium index table 340 are again positioned to the wafer at the end of the second polishing person polishing process 1 (the V3 position of the polishing arm 32 is obtained in FIGS. 1 and 2). At this time, the grinding w hoe is moved to the wafer with the 21 oscillating motion. Further, 23 1271264 causes the grinding arm 3 to move by the η phase with the first grinding process Π 320 grinding (4) knife edge 2) line. The second polishing is performed at the end point of the second polishing stage 320. When it is judged that the grinding process is 2, the so-called "Tian Danyu" is the second grinding condition, and the grinding arm milk is raised and stopped at the first 'predetermined film thickness. The processing is performed, and the grinding and polishing of the polishing stage 320 is performed to wash off the surface of the object to be cleaned and remove moisture. π According to 4 (slurry) washing, the second 'control' (four)' is judged whether or not the second polishing stage 32 is operated by the ice shovel 340 (if it can be performed, the waiting time can be performed. L Whether the action is completed or not) If the dynamism of the indicator table 340 is performed, the right is 9 〇. The second grinding process 曰=D 340 is again applied to the third polishing stage 330 (the wafer at the end of the second polishing stage 330 is fixed, 蕻ώ盥μη, Xia J', and the polishing arm 331 is ground. Processing (3rd grinding process Ρ3) The third grinding process Ρ9 of the β-grinding stage 330 on the third grinding stage 33 is the same as the second processing Ρ2, that is, The end point test determines the processing of the u笙qma I and J. The control unit is the processing film factory of the grinding table 330 of the brother 3, and the detection unit 50a of the grinding table 330 is detected by the monitoring device 50a. When the film 331 is raised and the third polishing stage 3 is stopped and the amount is $, the grinding process is performed. Next, the control unit determines whether or not it is possible to perform the operation of the indicator table 340 (Ρ) Whether the operation of the stage other than the grinding table 330 is completed.) 24 1271264 'When it can be performed, wait for it to proceed. Right to qn. Enter "D 34G" to make the indicator table 340 go again Fang Fang moves, positioning the wafer at the end of the third polishing process P3 on the carrier △ 彳 不 不 日 日 日 日 日〇 (VI position in Fig. 1 and Fig. 2). When the indicator table is 340 ^^, '帛3 transporting the robot arm means that the swing arm state and the rotation: day/2 pendulum movement and rotation action, the grinding process ends. After processing, the B-round Wp is carried out', and the next unprocessed wafer is transferred to the head W and adsorbed and held on the chuck V1, and the above operation is repeated. The processed wafer Wp is placed on the 3 temporary stage 382. When the third transport robot 370 is stopped at the standby position, the second transport robot 360 causes the holding portion of the return end portion 362, the multi-joint arm 363b, and the B-arm 36 arm to move the B temporary table 38 to the selenium port. Processed wafer Wp suction

> ',,, the rotary table 362 is rotated, the multi-joint arm 363b and the B-arm 365\ are extended, and the processed wafer Wp is placed on the cleaning machine inlet 216 of the cleaning unit 20 。. In the cleaning unit 200, 'in the i-th cleaning chamber 21, the two sides are rubbed by the rotating brush, and the second washing is performed until the second washing is performed by the ultrasonic cleaning in the second cleaning chamber: in the third cleaning chamber 23 The crucible is washed with pure water and dried in a dry atmosphere (4) under a nitrogen atmosphere. Further, after the wafer of the finished product to be cleaned, the i-th transfer robot arm 15 of the cartridge index unit 100 is taken out and stored in the designated slot of the cassette c 4 . As described above, the unprocessed wafer Wd attached to the cassette of the cassette index unit 1 is sequentially polished in the polishing unit 300 to become the processed wafer Wp, and the wafer cleaning unit 2 The process of being cleaned and stored in the box of the box = 25 1271264. In the polishing apparatus 1 of the present embodiment, the im τ * control unit is connected from the operator through the input device of the second, and starts automatic and continuous grinding of a plurality of wafers (for example, a plurality of wafers containing the crucible). Therefore, for a long time, it is basically the same for each of the wafers, and the actions of the Japanese yen are not parallelized at the same time, and are processed according to the process of the Japanese yen. The pad thickness measurement of the characteristic action of the main character

In the middle, the pad replacement, the adjustment and the adjustment of the adjuster are also centered on the grinding stage 310. Referring to the flowchart of Fig. 4 and Fig. 5, the operation of the polishing apparatus 1 is performed. Explain. Also, see Figures i to 3. Further, in the following description, for the sake of easy understanding, the polishing stage will be described as a polishing stage in which only the i-th polishing stage 31 is present. The actual operation of the second polishing stage 320 and the third polishing stage 330 has been considered to be described later. The control unit first determines whether or not the above-described series of polishing start commands are obtained from the input device (step S1), and if the start command is not obtained, waits until it is obtained. With this finger, it is possible to specify that several wafers should be continuously polished. Here, it is assumed that N wafers are to be continuously polished. When a series of grinding start commands are obtained, the control unit swings the grinding arm 311 to move the polishing head 311a over the pad thickness measuring device 319 to cause the pad thickness measuring device 319 to measure the thickness of the polishing pad 311c (step S2). As described above, the average value, the maximum value, the minimum value, and the value of a certain point in the radial direction may be any value, but the table 26 1271264 is an average value. Next, the control unit determines whether the pad thickness measured in step S2 is the predetermined minimum management value dl of the life of the polishing pad 31 lc, and determines whether the life of the polishing pad 311c has been used up. (Step S3). When it is determined in step S2 that it is the minimum management value dl or more (also, the grinding 塾 311 c is not used up), the process proceeds to step 11 11 which will be described later. On the other hand, when it is judged at step S2 that it is thinner than the minimum management value d1 (i.e., the life of the pad 31 lc has been used up), the process proceeds to step S4. In this case, the wafer + is ground. In step S4, the control unit swings the polishing arm 311 to move the mountain 3 to the top of the crucible changing device 318, and the device 318 replaces the polishing pad 311c with a new one. Then, the control unit measures the thickness of the pad measurement device (10) in the same manner as in S2, S5). In order to advance the C step, the control unit swings the grinding arm 311 to move the polishing to the pad adjusting device 317. The ancient λ machi head 311 Grinding head ^ 吏 grinding head down and making the original head 311 a and the adjuster Keep the knives rotating and rotate relative to each other, "The pad 311c performs the running-in adjustment (step S6). The grinding person usually performs the total smuggling of the new polishing pad 'S12, set (4)' and the usual adjustment (in the step Compared with the occasion of "there is a longer time", for example, the adjustment time is a long time, and the adjustment is crying for 31 years and the length is longer. In the same manner as in step S2, the pad thickness measuring device 319 measures the end of the polishing pad 3nc in the same manner as in step S2 (step S7). Then, the control unit, 27 1271264 performs the division of the difference between the pad thickness measured in step S7 and the pad thickness measured in step S5 by the adjustment time of the running-in adjustment in step S6, to perform the grinding in step S6. The average cutting rate of the pad 311c (step s8). Then, the control unit determines whether or not the average cutting rate calculated in step S8 is equal to or greater than the minimum management value Ri of the life of the factor adjuster 31 7b, and whether the life of the adjuster 317b has been used up (step S9). When it is determined in step S9 that the minimum management value R1 is equal to or greater than the minimum management value R1 (that is, the life of the adjustment cry 311 is not used up), the cutting amount of the polishing crucible 311c (two-column grinding in ° (step 胄 Si2 described later) Sl4) The adjustment time required for the polishing pad to be changed to a predetermined value (j times the time is obtained from the average (four) rate calculated in step S8, and the adjustment time is taken as The adjustment time during the adjustment of the next series of polishing is set to the internal memory of the control unit (step S10). Then, the process returns to step S1 0. In step S11, the control unit grinds the number of pieces specified in step S1.

The polishing heat after the wafer (N piece) is predicted by the thickness of the π pavilion dll c. In the steps S12 and S14 which will be described later, for example, the adjustment of 9 pieces of the Japanese yen is performed once, and the adjustment is performed once in advance for each of the plurality of rounds. Therefore, after grinding the N wafers, it is possible to calculate the number of adjustments of the p-pull. Moreover, the number of adjustments, the currently set adjustment time r Γ, the soil capture (the adjustment time set by the latest steps 810, 519, and 83), and the latest average removal rate (in step S8, The average cutting rate obtained by S1 8 and S28 is multiplied by a new average cutting rate in the middle of the year, thereby obtaining the thickness of the polishing pad 311c after the step S1 is used to grind the wafer. Predictive value. 28 1271264 The polishing pad 311 c is measured in advance in step S11, because even if the control unit determines whether or not the thickness in step Si 1 is equal to or greater than the minimum management value d1. The thickness of the polishing pad 311c is measured to grind N wafers at the minimum management value dl, and the life of the polishing pad 311c is still not used up, and the process proceeds to step S12. On the other hand, if the thickness of the polishing pad 3llc predicted in the step S11 is thinner than the minimum management value dl', the life of the polishing pad will be used up when the N-piece wafer is polished, and the process proceeds to (4) S13. In step S13, the control unit determines a maximum value M of the number of sheets in which the thickness of the polishing flaw 311c predicted when polishing a certain number of wafers is not thinner than the minimum management value dl. The maximum value Μ can be obtained by comparing the predicted value of the polishing pad 'f with the minimum f-value dl # for each number of sheets under the condition of M < N, as in the case of the calculation of the circle of step S1. . In addition, the control unit, = continuously grinds the number of wafers to be polished in a series, from the N piece in step si, and re-enters the U S14. ° is again M piece (step S13), transfer to step In step S12, the control part, the action of the flow description, dreams of entering the aforementioned wafer

The wafer is automatically polished to the N wafers (i.e., the N ^ 曰 0 is automatically connected (four) mill), and the _ series of grinding steps S15. In this case, the spring m I t is transferred to

N-piece unprocessed wafer of Cl; even: at the end of the polishing, the installation of the wafer in the unprocessed wafer (10) is set in the film, so that the control unit is used in the step. This series of researches ":: The rotor wafers in the flow description of the wafers described elsewhere (that is, the wafer wafers are automatically connected to the 29 1271264), when the series of polishing ends, the process proceeds to step si5. In the case where a series of polishing is completed, the M piece attached to the cassette C1 is not added with the Japanese yen Wd. The wafer is processed into the wafer core and stored in the PCT C4 °. The control unit is in steps S12 and S14. In a series of polishing, not only the polishing crucible 311c is polished, but also the number of wafers (for example, two wafers or the like, or three or more wafers) can be polished by polishing the crucible 3Uc. The portion swings the polishing arm 311 to move the polishing head W1a to the upper side of the adjustment device 317. The polishing head 3wa is lowered to rotate the polishing head 3U and the adjuster holding member (4) to rotate relative to each other to adjust the polishing head 311c. Step S12, su adjustment, according to the purpose The adjustment time is performed according to steps sl1 and si9 and the latest adjustment time. In the present embodiment, the adjustment conditions of steps SU and S14 are adjustment conditions other than the adjustment time and steps % and S26. In the same manner as in step S2, the thickness measuring device 319 measures the thickness of the polishing crucible 3Uc. Next, the control unit is the same as step S3. 'Determining whether the thickness of the measurement is determined by the predetermined minimum management value 寿命 above the life of the polishing pad 311c, thereby determining whether the life of the polishing pad 311c has been used up (step si6) If the official value di is still thin, the process proceeds to step S4. Conversely, if the minimum management value dl is equal to or greater than the minimum management value dl, the process proceeds to step S17. In step S17, the control unit causes the pad thickness measured in step S15 to be in step S3. The difference between the thicknesses of the measurements is divided by the adjustment of the adjustments made in the step or step 30 1271264 by which step _steps si? μ), and the accumulation of the polishing pads 31 in the series of grindings The average cutting rate of 1c. The _ person, the control unit determines that the average cutting rate calculated in step S17 is: the minimum management value R1 that determines the life of the adjuster 317b, and the sacred life of 31 7b Whether it has been used up (step S18) Cry in step S18 If it is determined that it is above the minimum management value R1 (that is, the adjustment ... b can not be used up), then the next series of grinding will be performed (step: 12'4) The adjustment time of the cutting amount of the grinding pad 3UC generated by the adjustment of the polishing pad 3Uc is a predetermined value, and is obtained from the average cutting rate in step S8 I, and the adjustment time is secondarily determined. Time), the adjustment time at the time of the adjustment of the next person's series of polishing is set in the internal memory of the control unit (step S19). Then, it returns to step S1. If the following steps S9 and S18 are determined to be below the minimum management value R1 (that is, the life of the adjuster 317b has been used up), the control unit will make the alarm unit work: and replace the alarm with 31 7b. To inform the operator, etc. (step %〇). The control unit waits for the replacement of the adjuster 3m in step S21, and when k is changed to 7b, the pad thickness measuring device 319 measures the thickness of the polishing pad 311c in the same manner as in step S2 (step S22). Moreover, the control unit can also use the signal f from the replacement detecting sensor (not shown) of the adjuster 317b to know the replacement of the adjuster 317b. If there is no such sensor, the author can also input the above. In the same manner as step S3, the control unit determines whether or not the pad thickness measured in the step is determined to be polished, and the predetermined minimum tube 31 1271264 has a lifetime value of dl or more. The thickness is used to determine whether the life of the polishing pad 311 has been used (step S23). If it is thinner than the minimum management value dl $, then the process proceeds to step S24 'oppositely'. If it is on the minimum management value, then S26 is transferred. In step S24, the control unit replaces the polishing pad 311c with a new polishing pad by the pad changing clothes 318 in the same manner as in step S4. Second, the control port P' measures the thickness of the polishing pad 3Uc (step S25). Then, the process proceeds to step S26. In step S26, the control unit causes the adjustment device 317 to perform the wear-in adjustment on the polishing crucible 3Uc in the same manner as step %. The process in step S26 is shifted from step S25 to step. S26 Day, It is said that it is the original running-in adjustment. However, when it shifts from YES to step (10) in step S23, the operation is completely the same, but it is not the original running-in adjustment (adjustment of the initial stage of the polishing pad 3Uc), but is used to perform the new adjuster 317b. The pre-action 0 of the determination of the quality or the like is performed, and the control unit measures the thickness of the polishing pad 311c (step s27). Next, the control unit' measures the thickness of the pad measured in step S25 or step S22 (depending on whether or not the step is performed. S24, 25 reaches step S25 and the difference between the pad thickness measured in step S27, divided by the step-by-step adjustment of the running-in adjustment in step S26, thereby dissipating the polishing pad 31 in step S26. The average cutting rate of c (step S28). The control unit determines whether or not the average cutting rate obtained in step S28 is within the range of the minimum management value R1 or more and within a predetermined maximum management value μ, thereby determining the adjustment. If the controller 317b is out of range (if the adjuster 317b is defective), then return to step s2. On the other hand, if it is within the range (if the adjuster 317b is good), then transfer Go to step S30. In the step S3G, the control unit adjusts the cutting amount of the polishing pad 3llc generated by the next polishing-sliding (the polishing 塾3 performed by the steps S12 and S(4) to a predetermined value. Step (10) The average cutting rate of the different output is obtained, and the adjustment time (time of one time) is used as the adjustment time in the adjustment of the next-series grinding, and is set in the internal memory of the diameter portion. Then, the process returns to step si. In the above description of the operation, the case where the polishing stage has only the first polishing stage 3U) has been described. However, in consideration of the actual operation of the second polishing core (10) μ 3 polishing stage 330, the movement of the second polishing stage 310 is also performed on each polishing stage (10), and the respective carriers are Judgment and processing are connected to perform actions. For example, the step is: after the thickness of the grinding burrs of each polishing head is individually performed, all the heads are only gas. The thickness of the polishing pad is at the minimum management value (the grinding heads can also be linked together "":, Only after the transfer to step SU, in other cases, the batch will not be batched, and the film to be processed-continuously polished will be determined according to the result of the grinding head break of each grinding stage. The actual = state, in the step ^ machine milk measurement of the grinding 塾 ^ degree 'in step S3, S16, S23 If the measured thickness value dl thin, then determine the life of the polishing pad 3Uc, a polishing pad 31 1 m In this case, the new polishing pad is replaced with a new one. Therefore, according to the present embodiment, the life of the polishing pad can be accurately determined in the case of 33 1271264, and the polishing pad can be appropriately replaced. Therefore, the wafer can be accurately polished. Further, it is possible to prevent the life of the polishing pad from being used up too early, and the frequent replacement of the polishing pad is sufficient, so that the running cost is reduced. Further, according to the present embodiment, in step S17, S8 calculates the polishing pad 311c. Average cutting rate, in step S18, S9, when the average cutting rate is lower than the predetermined value R1, that is, it is determined that the life of the adjuster 317b has been used up, and the adjuster 317b is replaced with a new adjuster. Therefore, according to the embodiment, the life of the adjuster can be correctly verified. The adjuster can be properly replaced. Therefore, the polishing pad can be appropriately adjusted to further accurately polish the wafer, and it is possible to prevent the life of the adjuster from being used up too early, and the frequency of replacement of the adjuster is small. In other words, according to the present embodiment, when the new adjuster is attached to the pad adjusting device, the predetermined adjustment is performed in step S26, and the pad thickness is measured in steps S22 and S27. As a result of the measurement, the average cutting rate of the polishing pad is calculated in step §28. If the average cutting rate is outside the predetermined range in step S29, it is determined that the new adjuster is defective, and step S2 is performed. Therefore, according to the present embodiment, The polishing pad can be adjusted with an appropriate cutting capability (adjustment for polishing), so that the polishing pad can perform the desired polishing characteristics, thereby enabling the wafer to be transferred. Further, according to the present embodiment, the average cutting rate of the polishing pad calculated in steps S18, S9, and S2Q is adjusted to the adjustment of the next series of polishing in accordance with steps S19, S9, and S29. The condition (in the present embodiment, it is not limited to this), the adjustment surface of the regulator is greatly reduced even if it is gradually consumed by 34 1271264, and the state of the polished surface of the polished polishing pad is adjusted for each crystal. The circle is substantially in a certain state, and a plurality of wafers can be stably and accurately polished. Further, according to the present embodiment, step S11 is performed to stop the life of the polishing pad from being exhausted during the series of polishing. From the point of view, many wafers can also be ground stably and accurately. Further, in the embodiment, the pad replacing devices 3,328,338 are provided. However, the present invention does not necessarily require such devices. If there is no pad changing device from 328, 338, for example, an alarm for notifying the operator that the grinding device should be replaced is generated in step S4. Further, in the above embodiment, the adjuster is replaced by an operation, but it is also possible to provide an adjustment: replacement device that automatically performs replacement of the adjuster. In this case, it is not in step S2. To generate an alarm, replace the regulator with the adjuster replacement unit. Further, the present invention can be applied to the case of precision tanning in the Cu_CMp process, and other examples such as layers

^ ^ ^ ^ ^ The process of insulating film processing, STI smuggling, wafer processing, and quartz j.c ^ ^ , : The process of soil plate, glass substrate, ceramic substrate is also applicable. In addition, the grinding dream indicator table 340 of the present embodiment is also used in a three-stage polishing system using a grinding device that is divided into four parts for grinding, such as D 31G, 32G, 330. In the second stage, the present invention is not limited to the H-implementation of the polishing line polishing process of the above-described arrangement-segment-segment, and the method of the method for manufacturing the semiconductor element of the present invention is described in 35 1271264. Fig. 6 is a flow chart showing the process of a semiconductor device. To start the semiconductor device process, first, in step S2, the appropriate processing steps are selected from the steps S201 to S204 listed below. According to the selection, the process proceeds to any of steps S201 to S204. ^ Step S2 (H' is an oxidation step for oxidizing the surface of the germanium wafer. Step S202 is a step of forming an insulating film on the surface of the germanium wafer by CVD or the like. Step S203 is performed on the germanium wafer. Steps of vapor deposition and the like form an electrode forming step of the electrode film. Step S204 is an ion implantation step of implanting ions in the germanium wafer. After the CVD step (S202) or the electrode forming step (S2〇3), the process proceeds to step S209. It is judged whether or not the CMp step is performed. If not, if the process proceeds to step S206', proceed to the step of step, which is a CMP step, in which the polishing device of the present invention is used to planarize and semi-conductive the interlayer insulating film. The formation of the damascene produced by the grinding of the metal film on the surface of the DuPont one thousand conductor element is removed. After the CMP step (S2G5) or the oxidation step (S2Q1), the process proceeds to S206. Step S206, #料岑 半聪.,, ^ m (four) shirt step. In this step, the coating of the resist to the Shixi wafer, the firing of the circuit pattern generated by the exposure using the exposure device, and the exposure of the crystal Development of the circle. Again: = will The portion other than the image of the anti-button agent is torn by the money _ ^ after the agent, to (4) the etch step of the anti-removal step. 4 Next 'in step S208, it is judged that all necessary steps are unfinished. Then, the process returns to step S200, and the step of the previous step is repeated to form 36 1271264 into a circuit pattern bundle 0 on the germanium wafer. If all the steps are completed in step S208, the semiconductor component system of the present invention is formed, % v^ivir 芡. It is used too...the grinding is set, so it will not use the grinding 塾1 which has been used up in the life, and it is the processing precision of the 'Qiannan CMP step, and the running cost is reduced. Wrong: The manufacturing method of the body component* can be low A semiconductor element having a small cost is manufactured in a semiconductor device. The semiconductor device manufactured by the semiconductor device manufacturing method has a high direct yield and is an inexpensive semiconductor device. Further, the semiconductor device process other than the semiconductor device process may be used in the (10) step. The polishing apparatus of the present invention has been described above with respect to various embodiments of the present invention and modifications thereof. However, the present invention is not limited thereto. According to the present invention, it is possible to provide a polishing pad or adjuster life determining method capable of correctly determining the life of the polishing pad or the adjuster. Further, according to the present invention, it is possible to provide an adjustment which can appropriately determine the quality of the newly adjusted piano. Further, according to the present invention, it is possible to provide a method for adjusting a polishing pad which can be ground in the same manner for each object to be polished. Further, according to the present invention, it is possible to provide a method for reducing running cost. Further, the present invention can provide a polishing apparatus capable of grinding the same object in the same manner. Further, the present invention can provide a method comparable to the conventional semiconductor element manufacturing method of 37 1271264. A semiconductor device manufacturing method of a semiconductor element manufactured at a low cost, and a low-cost semiconductor element. BRIEF DESCRIPTION OF THE DRAWINGS (1) A schematic plan view showing a polishing apparatus according to a first embodiment of the present invention. Fig. 2 is a schematic plan view showing the state of processing of the wafer of the polishing apparatus shown in Fig. 2; BRIEF DESCRIPTION OF THE DRAWINGS Fig. 03 is a schematic cross-sectional view showing the main elements of the first polishing stage, as shown schematically from the side. 4' is a schematic flow chart showing the operation of the polishing apparatus shown in Fig. 1. Fig. 5 is another schematic flow chart showing the operation of the polishing apparatus shown in Fig. 1. Figure 6 is a flow chart showing the process of semiconductor components. (1) Component Representation Symbol VI, V2, V3, V4 Chuck W Wafer (Wd Unprocessed Wafer, Wp Processed Wafer) 1 Grinding Device 310, 320, 330 Grinding Stage 311, 321, 331 Grinding Arm 311a Grinding head 38 1271264 311c Grinding pad 31 7, 327, 337 pad adjusting device 31 8, 328, 338 pad changing device 31 9, 329, 339 pad thickness measuring device 340 index table 350 carrying table 39

Claims (1)

1271264 Picking up, applying for a patent range: What: A: The method for determining the life of a grinding raft is used to determine the life of a polishing pad that grinds an object to be ground; it is characterized by measuring the thickness of the grinding burr of the polishing pad. Thinner than the established value ' :: The life is exhausted.丨运可2·—The life-determining method of the adjuster MH I determines the life of the adjuster used for the adjustment of the grinding 塾 of the grinding object; it is characterized by: adjusting the cumulative adjustment of the polishing pad with the adjuster Time · Before the adjustment of the cumulative adjustment time, 'measuring the thickness of the polishing pad according to the grinding 塾 measured after the adjustment of the cumulative adjustment time..., the average cutting rate in the cumulative adjustment time without taking the grinding 完. If the average cutting rate is lower than the predetermined value, it is judged that the life of the adjuster has been used. 3. A method for judging the quality of the adjuster, the adjustment of the polishing pad of the abrasive is used by 疋 厉 厉 研: 1 The new aging R used Good or bad; it is characterized by using a new adjuster to adjust the cumulative adjustment time of the polishing pad. After the adjustment of the cumulative adjustment time, the polishing pad measured before and after the adjustment of the thickness of the two-dimensional adjustment time is measured. Degree ''takes the average cutting rate of the cumulative adjustment time of the polishing pad 40 1271264 If the average cutting rate is outside the specified range, it is determined that the new adjuster is defective 〇4. - The adjustment method of the polishing pad' is used to adjust Adjusting the polishing pad for grinding the object to be polished; characterized in that: adjusting the polishing pad at least once using the adjuster under predetermined conditions; measuring the thickness of the polishing pad after at least one adjustment: according to at least one adjustment The thickness of the polishing pad measured before and after, to obtain the average cutting rate of the polishing pad at least one adjustment; according to the average cutting rate, set at least the second adjustment The adjustment condition for the next adjustment; the next adjustment is performed according to the adjustment conditions completed by the setting. 5 · For the adjustment method of the grinding raft according to item 4 of the patent application scope, wherein the adjustment condition is adjusted. a polishing apparatus for polishing a polishing object by applying a load between the polishing pad and the object to be polished, thereby polishing the object to be polished; and having a measuring portion for measuring a thickness of the polishing pad; And if the thickness of the polishing pad measured by the measuring portion is thinner than a predetermined value, a mechanism for replacing the polishing pad with a new polishing pad or a mechanism for automatically replacing the polishing pad with a new polishing pad is generated. a polishing apparatus that grinds an object to be polished while applying a load between the polishing pad and the object to be polished, thereby polishing the object to be polished; and comprising: an adjustment portion having a regulator; Adjust the polishing pad with the adjuster; 41 1271264 Measuring unit thickness; At the 1st time and after the 2nd time, the measuring part of the polishing pad is measured, and the timing is calculated based on the thickness measured at the 1st time and the thickness measured. The average cutting rate in the cumulative adjustment time of the polishing pad generated by the second time = ^^m; and if the upper average (4) is lower than the predetermined value, the mechanism that should replace the adjuster with the alarm of the new adjuster is generated. 'Or a mechanism that automatically replaces the adjuster with a new adjuster. —8. A polishing apparatus “curing an object to be polished by applying a weight between the polishing crucible and the object to be polished, thereby grinding the object to be polished, and is characterized in that: After the week is finished, adjust the polishing pad with the adjuster, the measuring part, install a new adjuster in the adjustment part, and use the new adjuster for the ith timing before the adjustment of the grinding 、, and after adjusting the polishing pad with the new adjuster At the second timing, the thickness of the polishing pad is measured. The calculation unit 'intermediates the thickness from the first timing and the second timing: the thickness in the measurement' to calculate the period from the ith timing to the second timing. The average cutting rate in the cumulative adjustment time of the resulting polishing pad; and if the average cutting rate is outside the specified range, a mechanism is generated to further replace the regulator with the alarm of the new regulator, or the regulator is automatically replaced with a new one. The mechanism of the adjuster. 9. A polishing apparatus for grinding an object to be polished by applying a 'edge to grind (4) and relative to the object to be polished between the polishing pad and the object to be polished; characterized in that it has: 42 1271264: week, part ' The adjuster is used to adjust the polishing pad by the adjuster; and the inner port P' measures the thickness of the polishing crucible at the first timing and the second timing after; the thickness measured according to the first day, and the second The mechanism for determining the average cutting rate in the cumulative adjustment time of the polishing pad produced by the adjuster during the period from the first timing to the second timing is measured by the timing I; and the condition setting unit according to the average cutting Rate, to set the adjustment conditions for the next adjustment after the δH of the polishing pad. 1 · The polishing device of the syllabus of the syllabus, which is the adjustment condition, is the adjustment time. ^ U· A kind of grinding The device is configured to grind the object to be polished while the polishing pad and the object to be polished are relatively moved between the polishing pad and the object to be polished, and is characterized in that: the body is covered with a regulator, and the device is provided with a regulator. Grinding pad grinding The fixed number of objects to be polished is adjusted by the adjuster; the measuring unit measures the thickness of the polishing roll at the first timing and the second time after; and the thickness measured at the first timing and at the second timing The thickness of the measurement is used to limit the number of objects to be polished to be polished by the polishing pad after the second timing, and to limit the thickness of the polishing flaw predicted to be not thinner than the predetermined value when it is assumed that the number of objects to be polished has been ground. The following is a mechanism for manufacturing a semiconductor device, comprising the step of planarizing a surface of a semiconductor wafer using the polishing apparatus according to any one of claims 6 to 11. 43 1271264 1 3. A semiconductor device manufactured by the method of manufacturing a semiconductor device according to claim 12 of the patent application.