TWI270319B - OLED display with top-emission structure - Google Patents

OLED display with top-emission structure Download PDF

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TWI270319B
TWI270319B TW94119368A TW94119368A TWI270319B TW I270319 B TWI270319 B TW I270319B TW 94119368 A TW94119368 A TW 94119368A TW 94119368 A TW94119368 A TW 94119368A TW I270319 B TWI270319 B TW I270319B
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Taiwan
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layer
organic electroluminescent
electroluminescent display
fabricating
substrate
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TW94119368A
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TW200644717A (en
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Ting-Chou Chen
Chien-Yuan Feng
Yuan-Chang Tseng
Wen-Jang Lan
Sheng-Hsu Shih
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Univision Technology Inc
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Abstract

An OLED display with top-emission structure includes, from bottom to top order, a substrate, a plurality of insulating regions arranged in predetermined pattern, cathode regions with trenched cross section, insulating films, OLED multi-layer and anode layer. The insulating region has a predetermined angle with respect to the substrate and the overlaid cathode has a trenched profile with the predetermined angle. The light emitted from the OLED multi-layer can be confined by the light-reflecting cathode to minimize total internal reflection. Alternatively, a transparent cathode can be placed on topmost position of the OLED device and a reflecting metal layer is provided below the anode layer to reflect the light emitted from the OLED multi-layer in order to enhance luminance efficiency.

Description

127*0319 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種有機電激發光顯示器,更有關於一種具有頂 部發光結構之有機電激發光顯示器,可避免全反射問題以提昇向上發 光效率。 【先前技術】 隨著可攜式電子產品如手機、數位相機或是個人數位助理的普 馨及,平面顯示器(FPD)的性能也日益重要。平面顯示器主要包含液晶顯示器 (LCD)、電細示if及有機電激發細示轉,目膽為纽驗晶顯示器 因液晶本身不會發光,需要加裝背光板,而對於重量體積及成本上有不利 之影響。 1987年美國柯達公司首先發表有機發光二極體(OLED),在兩片電 極間注入有機小分子材料;其後歷年英關橋大學發表高分子發光二極 體(PLED) ’在近十幾年來,由於各誠的積極研發,因此有機發光層的材 φ料、特性及相關技術均有大幅之突破。由於有機電激顯示器具有自發光、 較大操作溫度範圍及廣視角之優點,因此可望成為主流之平面顯示器。 苐圖所示者為一習知底部發光(B〇tt〇m emissi〇n)有機發光二極 體兀件10之剖視圖,該有機發光二極體元件1〇主要包含一玻璃基板觀、 在玻璃基板1〇〇上成預定圖案的陽極圖案層12〇、主要位在陽極圖案層12〇 上之OLED發光多層結構M〇、位在〇LED發光層M〇上之陰極層122、及 位在陽極圖案層i2〇之間作為隔絕用的絕緣區16〇。其中〇led發光多層 結構140包含由下而上的電洞傳輸層(HTL)142、發光材料層(eml)i44及電 1270319 -子傳輸層(ETL)146。在經由陽極圖案層120及陰極層122通入電流後,電 子電洞分別經由電子傳輸層(ETL)146及電洞傳輸層(HTL)142在發光材料層 (EML)144結合發光。為了定義圖素面積與避免各個圖素之間的短路問題, 在1%極圖案層120之間形成絕緣區160。然而在上述之習知底部發光有機發 光二極體元件10,由於係在發光側(下側)形成主動或是被動之驅動電路, 因此會影響有機發光二極體元件10之開口率。 第一A圖所示者為另一習知有機發光二極體元件1〇(NEC之曰本 Φ專利JPN〇.10_106751)之上視圖’而第4圖所示為第二八圖中有機發光 二極體元件10沿著A-A,線之側視圖。該有機發光二極體元件1〇與第一圖 所示者有相近之元件,因此使用類似的元件編號,在陽極圖案層12〇之兩 侧各具有一金屬條180,以降低陽極圖案層12〇之阻抗。如第二a圖所示, 該金屬條180係在有機發光二極體元件1〇中呈平行條狀分布。由於陽極圖 案層120通常使用功函數(workfUncti〇n)較高之材料以提高電洞產生效率, 如可以使用氧化銦錫_财料,因此會具有較大的阻抗,影響發光效率。 春金屬條⑽可使用功函數較陽極圖案層叫、之材料,以降低陽極之整體 阻抗,提升發光效率。 第二A圖所示者為本案同一申請人「悠景科技股份有限公司」之 中華民國專利第228382號「有機平面發光顯示器及其製程」之上視圖,而 第三B圖所示為第三A圖中有機發光二極體元件1〇沿著μ線之側視圖。 “專利使用刀佈在畫素四週之金屬導線區域(PD舰yj),因此可在畫素區域 四週注入電流,以增加發光效率且使其發光效率均勻。 美國專利Να 5247190揭露-種可以提供頂部發光(τ〇ρ emissi〇n) 1270319 之有機發光二極體元件結構及材質,但是該專利並無提供解決全反射問題 及使發光效率與對比最佳化之機制。參見第九圖,AppUedphysicsletters於 2003年4月21日(PR 2715)揭露一種用於頂部發光(Top emissi〇n)之有機發 光二極體元件,該有機發光二極體元件包含由下至上之透明基板9〇1、鋁 903、ITO陽極905、OLED發光多層結構907及透明陰極層91卜然而該有 機發光二極體元件亦無提供解決全反射問題及使發光效率與對比最佳化之 機制。 【發明内容】 φ 因此本發明之目的係在於提供一具有頂部發光結構之有機電激發 光顯示器,該有機電激發光顯示器可以避免全反射所導致之發光效率劣 化,並可以增加光源純度及灰階效率。 為達成本發明之上述目的,本發明提供一種有機電激發光顯示 器,包含由下至上之一基板,呈陣列狀分布之絕緣區,位在基板及絕緣區 之上且具有井狀側面之陰極層,位在絕緣區及陰極層之上之絕緣層,位在 絕緣層上之0LED發光多層結構及陽極層。其中該絕緣區與基板具有一預 0 疋之夾角,使仔於絕緣區上形成之陰極層具有一預定夾角之井狀側面。自 OLED發光多層結構發射的光線可以被位於其下之具有井狀側面之陰極層 所反射,因此有較佳之向上發光效率及避免全反射問題,該預定之夾角可 以視設計需求而變化,例如可以為9〇度夾角。 由於該具有頂部發光結構之有機電激發光顯示器採用頂部發光結 構’因此基板可以為任何平坦的透光/不透光、軟/硬基板,可使該有機電 激發光部分直接成膜於TFT之上,以提昇有機電激發光顯示器開口率。再 者可於所完成之發光元件上加上一霧面偏光膜,以增加視角。 8 1270319 • 鱗成本發明之上述目的,本發明提供-種有機電激發光顯示器 製作方法’包含下列步驟;冑備—基板;在基板上以微影製程或微影钱 刻製程製作多數之絕緣區,其中該絕緣區與基板具有一預定之爽角;在絕 緣區上形成陰極層;錯極層切微影製程或郷_製程製作絕緣層; 在、、、邑緣層上成長QLED發光乡層結構;及在qled發光乡層結構上製作陽極 • 層。 • 其中該製作多數之絕、緣區步驟係包含先塗佈聚亞醯胺(P〇lyimide) 等材貝’制職影製程,製聽緣區。該製作乡數之絕緣區步驟亦可以 用PVD、CVD等方式成長氧化石夕(Si〇x)、氮化石夕(狐)、氮氧化石夕(si〇xN^ 等無機膜,再彻微影綱製程製作絕緣區。另外該製舰緣層步驟包含 先塗佈聚亞醯胺(Polyimide)等材質,再利用微影製程製作絕緣層。 【實施方式】 為了使貴審查委員能更進一步瞭解本發明為達成預定目的所採 % 取之技術、手段及功效,請參閱以下有關本發明之詳細說明與附圖,相信 本發明之目的、特徵與特點,當可由此得-深人且具體之瞭解,然而所附 圖式僅提供參考與說明用,並非用來對本發明加以限制者。 參見第四A圖,為依據本發明一較佳具體實例之具有高發光效率 與咼灰階對比之有機電激發光顯示器3〇之上視圖,第四b圖則為沿著第四 A圖中線A-A’之側視圖,該有機電激發光顯示器3〇包含由下至上之一基板 300 ’呈陣列狀分布之絕緣區360,位在基板3〇〇及絕緣區360之上且具有 井狀側面之陰極層322,主要位在絕緣區360及陰極層322之上之絕緣層 1270319 • 350,及位在陰極層322上之OLED發光多層結構340及陽極層320。其中 該絕緣區與基板具有一預定之夾角0,使得於絕緣區上形成之陰極層具有 一預定夾角之井狀側面。復參見第四B圖,自〇LED發光多層結構34〇所 發出之光線可以被具有井狀側面之陰極層322所反射,因此可以避免全反 射問題,增加該有機電激發光顯示器3〇之發光效率。 該OLED發光多層結構340可以為多數色彩之〇LED發光多層結 構340 ’如紅色olk)發光多層結構3嫌,綠色〇LED發光多層結構m〇g _及藍色OLED發光多層結構34〇b,可以達成全彩之效果。127*0319 IX. Description of the Invention: [Technical Field] The present invention relates to an organic electroluminescent display, and more particularly to an organic electroluminescent display having a top emitting structure, which can avoid the problem of total reflection to enhance upward Luminous efficiency. [Prior Art] With the popularity of portable electronic products such as cell phones, digital cameras, or personal digital assistants, the performance of flat panel displays (FPDs) is becoming increasingly important. The flat panel display mainly includes a liquid crystal display (LCD), an electric fine show if and an organic electric excitation fine turn. The eyebrow is a neon crystal display. Since the liquid crystal itself does not emit light, a backlight board needs to be added, and the weight and the volume have cost. Adverse effects. In 1987, the United States Kodak Company first published an organic light-emitting diode (OLED), injecting small organic molecules between two electrodes; afterwards, Yingguanqiao University published a polymer light-emitting diode (PLED) for nearly a decade. Due to the active research and development of each company, the materials, characteristics and related technologies of the organic light-emitting layer have made great breakthroughs. Since the organic electro-excitation display has the advantages of self-illumination, a large operating temperature range, and a wide viewing angle, it is expected to become a mainstream flat panel display. The figure shows a cross-sectional view of a conventional bottom-emitting (B〇tt〇m emissi〇n) organic light-emitting diode element 10, which mainly comprises a glass substrate view, in the glass. An anode pattern layer 12 of a predetermined pattern on the substrate 1 , an OLED light-emitting multilayer structure M 主要 mainly on the anode pattern layer 12 〇, a cathode layer 122 on the 发光 LED light-emitting layer M 、 , and an anode layer The pattern layer i2 is used as an insulating region 16 for isolation. The 发光led light-emitting multilayer structure 140 includes a bottom-up hole transport layer (HTL) 142, a light-emitting material layer (eml) i44, and an electric 1270319-sub-transport layer (ETL) 146. After a current is passed through the anode pattern layer 120 and the cathode layer 122, the electron holes are combined to emit light in the luminescent material layer (EML) 144 via the electron transport layer (ETL) 146 and the hole transport layer (HTL) 142, respectively. In order to define the pixel area and avoid the short circuit problem between the individual elements, an insulating region 160 is formed between the 1% pole pattern layers 120. However, in the above-described conventional bottom-emitting organic light-emitting diode element 10, since an active or passive driving circuit is formed on the light-emitting side (lower side), the aperture ratio of the organic light-emitting diode element 10 is affected. Figure 1 is a top view of another conventional organic light-emitting diode element 1 (NEC's Φ patent JPN 〇.10_106751) and FIG. 4 is an organic light emission in the second eight figure. The diode element 10 is along AA, a side view of the line. The organic light-emitting diode element 1 is similar to the one shown in the first figure, so that a similar metal element 180 is used on both sides of the anode pattern layer 12 to reduce the anode pattern layer 12 by using similar element numbers. The impedance of 〇. As shown in the second a diagram, the metal strips 180 are distributed in parallel strips in the organic light emitting diode element 1A. Since the anode pattern layer 120 generally uses a material having a higher work function (workfUncti〇n) to improve hole generation efficiency, such as indium tin oxide, it is possible to have a large impedance and affect luminous efficiency. The spring metal strip (10) can use a material whose work function is higher than that of the anode pattern layer to reduce the overall impedance of the anode and improve the luminous efficiency. Figure 2 is a top view of the same applicant "Yujing Technology Co., Ltd.", Republic of China Patent No. 228382 "Organic Planar Illuminated Display and Its Process", and Figure 3B shows the third A side view of the organic light-emitting diode element 1 〇 along the μ line. “The patent uses a knife-wired metal wire area around the pixel (PD ship yj), so it can inject current around the pixel area to increase luminous efficiency and make it luminously uniform. US Patent Να 5247190 reveals that the species can provide top Illumination (τ〇ρ emissi〇n) 1270319 OLED structure and material, but this patent does not provide a mechanism to solve the total reflection problem and optimize the luminous efficiency and contrast. See Figure IX, AppUedphysicsletters On April 21, 2003 (PR 2715), an organic light-emitting diode element for top emission is disclosed, which comprises a bottom-up transparent substrate 9〇1, aluminum 903. The ITO anode 905, the OLED light emitting multilayer structure 907 and the transparent cathode layer 91 do not provide a mechanism for solving the total reflection problem and optimizing the luminous efficiency and contrast. [Invention] φ The object of the invention is to provide an organic electroluminescent display having a top emission structure, which can avoid the occurrence of total reflection. The efficiency is degraded, and the purity of the light source and the efficiency of the gray scale can be increased. In order to achieve the above object of the present invention, the present invention provides an organic electroluminescent display comprising an insulating region distributed in an array from a bottom-up substrate, which is located on the substrate. And a cathode layer above the insulating region and having a well-side side, an insulating layer on the insulating region and the cathode layer, an OLED LED multilayer structure and an anode layer on the insulating layer, wherein the insulating region and the substrate have a pre- The angle between the 疋, the cathode layer formed on the insulating region has a well-shaped side of a predetermined angle. The light emitted from the OLED light-emitting multilayer structure can be reflected by the cathode layer located below the well-like side, thus having Preferably, the upward illuminating efficiency and the problem of total reflection are avoided, and the predetermined angle can be changed according to design requirements, for example, an angle of 9 。. Since the organic electroluminescent display having the top illuminating structure adopts a top emitting structure, the substrate can For any flat light-transmitting/opaque, soft/hard substrate, the organic electroluminescent portion can be directly formed into a TFT In order to increase the aperture ratio of the organic electroluminescent display, a matte polarizing film may be added to the completed illuminating element to increase the viewing angle. 8 1270319 • The above object of the invention, the invention provides an organic electric The method for fabricating an excitation light display comprises the following steps: preparing a substrate; forming a plurality of insulating regions on the substrate by a lithography process or a lithography process, wherein the insulating region and the substrate have a predetermined refreshing angle; in the insulating region Forming a cathode layer on the upper surface; forming a insulating layer on the erbium layer by a lithography process or a 郷 process; growing a QLED light-emitting layer structure on the edge layer; and forming an anode layer on the qled light-emitting layer structure. The majority of the steps of the production and the marginal zone include the application of a Pylyimide (P〇lyimide) and other materials to make a sounding process. The insulating layer step of the number of townships can also be grown by means of PVD, CVD, etc., by using an inorganic film such as oxidized stone (Si〇x), nitriding stone (fox), nitrogen oxynitride (si〇xN^, etc.). In the process of manufacturing the insulating layer, the step of manufacturing the ship layer comprises first coating a material such as polyimide, and then using an lithography process to form an insulating layer. [Embodiment] In order to enable the reviewing committee to further understand the present In order to achieve the intended purpose, the techniques, means and effects of the invention are as follows. Please refer to the following detailed description of the invention and the accompanying drawings, which are believed to be However, the drawings are provided for reference and description only, and are not intended to limit the invention. Referring to FIG. 4A, an organic electric device having high luminous efficiency and 咼 gray scale contrast according to a preferred embodiment of the present invention. The top view of the excitation light display 3 ,, the fourth b plan is a side view along the line A-A' of the fourth A picture, the organic electroluminescent display 3 〇 comprises an array of substrates 300' from bottom to top Insulated area 360 a cathode layer 322 over the substrate 3 and the insulating region 360 and having a well-side side, an insulating layer 1270319 • 350 mainly located on the insulating region 360 and the cathode layer 322, and an OLED positioned on the cathode layer 322 The light-emitting multilayer structure 340 and the anode layer 320. The insulating region and the substrate have a predetermined angle 0 such that the cathode layer formed on the insulating region has a well-shaped side with a predetermined angle. Referring to FIG. 4B, the self-turning LED The light emitted by the light-emitting multilayer structure 34 can be reflected by the cathode layer 322 having the well-side side, thereby avoiding the problem of total reflection and increasing the luminous efficiency of the organic electroluminescent display 3. The OLED light-emitting multilayer structure 340 can be Most of the color LED light-emitting multilayer structure 340 'such as red olk) light-emitting multilayer structure 3, green 〇 LED light-emitting multilayer structure m 〇 g _ and blue OLED light-emitting multilayer structure 34 〇 b, can achieve full color effect.

該具有井狀側面之陰極層322可定義晝素發光區域,避免有機光 源向四周細·域逸射與損失,並使其光源有效侧。#細不同顏色 OLED發光多層結構34〇時,該陰極層切可增加光源色純度與灰階效率 及增加視狀清晰程度。再者,該陰極層322可使該有機電激發光顯示器 3〇不受外在光源之干擾,可以增加其對光源之解析能力。該陰極層從可 使光源反射,進而僅允許光源從IT〇等透明電極顯示面射出。 在上述較佳具體實财,該絕緣區·係為絕緣材質,例如可以 為氧切⑸⑻、氮切(狐)、氮氧化邦伽觸域蹄質。該陰極 層322可使用高導電係數與高反射率之材質製作;例如:金、銀、銘、^ 與鉻等材質或多層複合高導電材料。該絕緣層350可以為氧彳_=銅氮 化石夕(SiNx)、氮氧化石夕(Si0xNy)等高透光性材質,且厚度可為^吻〇。: 陽極層32〇可以為ΙΤΟ、ιζο或IW0等透明電極_。 ’ °亥 由於本發明之有機電激發光顯示器 3〇係為11轉統構,因此基 1270319 _板300可以為任何平坦的透光/不透光、軟/硬基板。本發明之有機電激發 光顯示ϋ 30可以直接成膜在薄膜電晶體(TFT)之上,有助於提升開口率。 再者,由於底部陰極層322被上層之0LED發光多層結構撕、 及陽極層320保護,有助於延長元件壽命。 參見第五A至第五—,為依據本發明之―較佳具斷例之有機 電激發光部分30製作方法,該方法包含下列步驟:The cathode layer 322 having a well-side side defines a halogen light-emitting region to prevent the organic light source from escaping and losing to the surrounding area and making the light source effective side. #细不同色 When the OLED light-emitting multilayer structure is 34〇, the cathode layer cut can increase the color purity and gray-scale efficiency of the light source and increase the visibility. Furthermore, the cathode layer 322 can prevent the organic electroluminescent display 3 from being disturbed by the external light source, and can increase its resolution ability to the light source. The cathode layer is reflected from the light source, and only the light source is allowed to exit from the transparent electrode display surface such as IT〇. In the above preferred embodiment, the insulating region is made of an insulating material, and may be, for example, oxygen cut (5) (8), nitrogen cut (fox), and nitrogen oxide bangs. The cathode layer 322 can be made of a material having high conductivity and high reflectance; for example, gold, silver, quartz, chrome, or a multi-layer composite high-conductivity material. The insulating layer 350 may be a high light transmissive material such as yttrium oxide = SiNx or SiOX (Si0xNy), and the thickness may be 〇 〇. : The anode layer 32A may be a transparent electrode _ such as ΙΤΟ, ιζο or IW0. Since the organic electroluminescent display 3 of the present invention is an 11-turn configuration, the base 1270319_plate 300 can be any flat light-transmitting/opaque, soft/hard substrate. The organic electroluminescent display ϋ 30 of the present invention can be directly formed on a thin film transistor (TFT) to help increase the aperture ratio. Moreover, since the bottom cathode layer 322 is torn by the upper OLED light emitting multilayer structure and protected by the anode layer 320, it contributes to prolonging the life of the element. Referring to Figures 5A through 5, a method of fabricating an organic electroluminescent portion 30 according to the preferred embodiment of the present invention comprises the following steps:

StepS500 :製備一基板300,例如可為一玻璃基板3〇〇,此步驟中 Φ亦以清潔劑或去離子水等液體清洗該玻璃基板遍(第五A圖)。Step S500: Preparing a substrate 300, for example, a glass substrate 3, in which Φ also cleans the glass substrate with a liquid such as detergent or deionized water (Fig. AA).

Step S510 :在基板300上製作多數之絕緣區36〇,例如可以先先塗 佈聚亞醯胺(Polyimide)等材質,侧用微影製程,製作絕緣區撕或以 PVD、CVD方式成長Si〇x、舰、⑽聊等無機膜,再利用微雜刻製 程製作絕緣區360 (第五B圖)。Step S510: A plurality of insulating regions 36 are formed on the substrate 300. For example, a material such as polyimide may be coated first, and a lithography process may be used to make an insulating region tear or grow Si in a PVD or CVD manner. x, ship, (10) chat and other inorganic membranes, and then use the micro-engraving process to make the insulation zone 360 (fifth B).

Step S520 :在基板300及絕緣區36〇上製作陰極層322,可先用濺 鍍、療鍍、電子束或f鍍魏程成長金屬雜,製作金屬 陰極層322圖案(第 _五(:圖)。Step S520: The cathode layer 322 is formed on the substrate 300 and the insulating region 36, and the metal cathode layer 322 pattern can be formed by sputtering, electroplating, electron beam or f-plating to form a metal cathode layer 322 pattern (the fifth layer: ).

StepS5;30 ·在陰極層322上製作絕緣層35〇,可先塗佈聚亞驢胺 (Pdyimide)等材質,再利用微影製程,製作絕緣層35〇,•或是利用ρν〇、 CVD等方法成長無機臈如Si〇x、狐、si〇xNy等高透光性材質,厚度約 為〇·5 5μιη ’再利用微影餘刻製程,製作絕緣層35〇(第五〇圖)。StepS5; 30 - The insulating layer 35 is formed on the cathode layer 322, and a material such as polydendamine (Pdyimide) can be applied first, and then an insulating layer 35 can be formed by a lithography process, or ρν〇, CVD, or the like can be used. The method is to grow inorganic materials such as Si〇x, fox, si〇xNy and the like, and the thickness is about 〇·5 5μιη 'reuse the lithography process to make the insulating layer 35〇 (fifth map).

Step S540 :在陰極層322及絕緣層35〇上製作〇led發光多層結 構34〇,例如可以用蒸鍍方式成長〇LED發光多層結構⑽(第五E圖)。 11 1270319 • StepS55〇:在〇LED發光多層結構340上製作陽極層32〇,可以 用錢鏟、蒸鑛及電子束專方式成長ITO、IZO或IWO等透明電極薄膜(第五 F圖)。 參見第/、圖,其中该絕緣區與基板具有一預定之夾角0,使得於 絕緣區上形成之陰極層具有一預定夾角之井狀側面,而該預定之夾角可以 視設計需求而變化,例如可以為90度夾角,以有效降低全反射。再者可於 最終所形成之發光元件上加上一霧面偏光膜(未圖示),以增加視角。最終 Φ 所形成之發光元件在此是指陽極層320。 弟七圖所示為依據本發明另一較佳具體實例之具有頂部發光結構 之有機電激發光顯示器30’。如七圖所示,該有機電激發光顯示器3〇,具有由 下至上之一基板3〇〇’,呈陣列狀分布之絕緣區360’,位在絕緣區360,之上 的反射金屬層370,,位在反射金屬層370,之上且被陣列狀分布之絕緣區36〇, 隔開之陽極層320,,位在陽極層320,之上且主要分布於絕緣區36〇,之上的絕 緣層350’,位於陽極層32〇,及絕緣層350,之上的〇LED發光多層結構34〇, 參及位於整個結構之上的透明陰極322,。再者可於陰極層322,上加上一霧面偏 光膜(未圖示),以增加視角。 其中反射金屬層370係採用具有南反射率之金屬材料,例如可以 採用銀等金屬材料。該透明陰極322,可以採用具有高穿透性金屬材料,例 如可以採用鋁、銀等金屬材料。而基板3〇〇,、絕緣區36〇,、陽極層32〇f、絕 緣層350’、及〇led發光多層結構340’可以採用和第四b圖所示相對應元 件相似之材料。 12 1270319 參見第八A圖至第八g圖, 有機電激發光顯示器3〇,之流程圖。 為依據本發㈣—難舰實例製作Step S540: A 发光led light-emitting multilayer structure 34 is formed on the cathode layer 322 and the insulating layer 35, and for example, the LED light-emitting multilayer structure (10) can be grown by vapor deposition (fifth E diagram). 11 1270319 • StepS55〇: An anode layer 32〇 is formed on the 〇LED light-emitting multilayer structure 340, and a transparent electrode film such as ITO, IZO or IWO can be grown by a shovel, steaming and electron beam special method (fifth F). Referring to FIG. 3, wherein the insulating region has a predetermined angle 0 with the substrate, such that the cathode layer formed on the insulating region has a well-shaped side with a predetermined angle, and the predetermined angle may vary depending on design requirements, for example, Can be at an angle of 90 degrees to effectively reduce total reflection. Further, a matte polarizing film (not shown) may be added to the finally formed light-emitting element to increase the viewing angle. The luminescent element formed by the final Φ is referred to herein as the anode layer 320. Figure 7 is a diagram showing an organic electroluminescent display 30' having a top emission structure in accordance with another preferred embodiment of the present invention. As shown in FIG. 7 , the organic electroluminescent display 3 has an insulating region 360 ′ which is distributed in an array from the bottom to the top substrate 3′′, and a reflective metal layer 370 located on the insulating region 360. The anode layer 320, which is disposed on the reflective metal layer 370 and arranged in an array, is disposed on the anode layer 320 and is mainly distributed on the insulating region 36〇. The insulating layer 350', located on the anode layer 32A, and the insulating layer 350, has a 〇LED light-emitting multilayer structure 34〇, which is associated with the transparent cathode 322 over the entire structure. Further, a matte polarizing film (not shown) may be added to the cathode layer 322 to increase the viewing angle. The reflective metal layer 370 is made of a metal material having a south reflectance, and for example, a metal material such as silver may be used. The transparent cathode 322 can be made of a metal material having high permeability, and for example, a metal material such as aluminum or silver can be used. The substrate 3, the insulating region 36, the anode layer 32〇f, the insulating layer 350', and the 发光led light-emitting multilayer structure 340' may be made of a material similar to that of the corresponding element shown in the fourth b-picture. 12 1270319 Referring to Figures 8A to 8g, a flow chart of an organic electroluminescent display. According to this (4) - difficult ship example

Stq>S_ .製備—基板’,例如可為—玻璃基板卿,此步驟 中亦以清潔劑或去離子水等液體清洗該玻璃基板獅丫第八A圖)。 _㈣:在基板3⑻’上製作多數之絕緣區齋例如可以先塗 佈聚亞醢卿趣)特質,再_微影製程製作絕緣區歎或以土 PVD、CVD方式成長咖、馳、動y等無機膜,再利_侧製 程製作絕緣區360,(第八b圖)。Stq>S_.Preparation-substrate', for example, may be a glass substrate. In this step, the glass substrate is also cleaned with a liquid such as a detergent or deionized water (Fig. 8A). _ (4): On the substrate 3 (8)' to make a majority of the insulation zone, for example, you can first coat the characteristics of Polyaluminium.) Then use the lithography process to make the insulation zone sigh or use the soil PVD, CVD method to grow coffee, Chi, move y, etc. The inorganic film is further fabricated into an insulating region 360, (eighth b).

Step S82G : _職、驗、電子束或魏㈣程成長金屬薄膜 再利用微影働j製程,製作反射金屬層37帽案,材質可為銀或其他高反 射性金屬材質(第八c圖)。Step S82G : _ job, inspection, electron beam or Wei (four) process metal film and then use the lithography process to make a reflective metal layer 37 cap case, the material can be silver or other highly reflective metal material (eighth c picture) .

StepS830 ··在反射金屬層寶上製作陽極層32〇,,可以用濺鑛、 蒸鍍及電子料方式成長IT0、IZ〇或圓等翻電極賊,再利用微影 蝕刻製程,製作陽極層320,(第八D圖)。StepS830 ··The anode layer 32〇 is formed on the reflective metal layer treasure, and the electrode thief such as IT0, IZ〇 or circle can be grown by splashing, vapor deposition and electronic materials, and then the anode layer 320 is fabricated by using a photolithography etching process. , (eighth D picture).

Step S840 ·•在陽極層320’上製作絕緣層35〇,,可先塗佈聚亞酿胺 (Polyimide)等材質,再利用微影製程,製作絕緣層35〇,;或是利用pvD、 CVD等方法成長無機膜如Si0x、SiNx、si〇xNy等高透光性材質,厚度約 為0·5〜5μηι,再利用微影蝕刻製程,製作絕緣層35〇,(第八E圖)。Step S840 ·• The insulating layer 35〇 is formed on the anode layer 320', and the material such as polyimide or the like may be applied first, and then the insulating layer 35 制作 may be formed by using a lithography process; or the pvD, CVD may be used. The inorganic film such as Si0x, SiNx, and Si〇xNy is grown to have a thickness of about 0.5 to 5 μm, and an insulating layer 35 is formed by a photolithography process (Eth 8th).

Step S850 :在陽極層320’及絕緣層350,上製作0LED發光多層結 構340’,例如可以用蒸鍍方式成長0LED發光多層結構34〇,(第八F圖)。Step S850: An OLED light emitting multilayer structure 340' is formed on the anode layer 320' and the insulating layer 350. For example, the OLED light emitting multilayer structure 34A can be grown by vapor deposition (Fig. 8F).

Step S860 ··在OLED發光多層結構340’上製作透明陰極322,,沉 13 1270319Step S860 · Making a transparent cathode 322 on the OLED light-emitting multilayer structure 340', sinking 13 1270319

積金屬薄膜:利_、蒸鍍、電子綱賴程成長可透光金屬薄膜, 製作透繼32_、蝴Wit则賴第八G 圖)。 職疋,本發明確能藉上述所揭露之技術,提供一種迴然不同於習 知者的設計,堪能提高整體之使用價值,又其申請前未見於刊物或公開使 用,誠已符合發明專利之要件,爰依法提出發明專利申請。 准上述所揭路之圖式、說明,僅為本發明之實施例而已,凡精 馨于此項技藝者當可依據上述之說明作其他讎之改良,而這些改變仍屬於 本發明之發明精神及以下所界定之專利範圍中。 【圖式簡單說明】 第圖所示者為一習知底部發光(Bottom emission)有機發光二極體 元件之側視圖。 第一A圖所不者為另一習知有機發光二極體元件之上視圖。Metal film: _, evaporation, electronic growth, permeable, transparent metal film, production through 32_, Butterfly Wit is the eighth G map). At the job, the present invention can provide a design that is different from the prior art by the above-mentioned disclosed technology, which can improve the overall use value, and is not found in the publication or public use before the application, and has already complied with the invention patent. The essentials are to file an invention patent application in accordance with the law. The drawings and descriptions of the above-mentioned disclosed roads are only examples of the present invention, and those skilled in the art can make other improvements according to the above description, and these changes still belong to the inventive spirit of the present invention. And in the scope of patents defined below. BRIEF DESCRIPTION OF THE DRAWINGS The figure is a side view of a conventional Bottom emission organic light emitting diode element. The first A is not a top view of another conventional organic light emitting diode element.

第二B圖所示者為沿著第二A圖線A-A,之侧視圖。 第二A圖所不者為另一習知有機發光二極體元件之上視圖。 第三B圖所示者為沿著第三A圖線Λ-A,之側視圖。 第四A圖為依據本發明一較佳具體實例之有機電激發光顯示器之上 視圖。 第四B圖所示者為沿著第四A圖線A-A,之側視圖。 第五A至第五F圖為依據本發明之一較佳具體實例之有機電激發光 部分製作方法。 14 1270319 $六圖為依據本發明另—較佳具體實例之有機電激發光顯示器之側 視圖。 第七圖所不為依據本發明另一較佳具體實例之具有頂部發光結構之 有機電激發光顯示器。 第八A圖至第人G圖為依據本發明另—較佳具體實例製作有機電激 發光顯示器之流程圖。 _ 第九圖所示者為另一習知有機發光二極體元件之側視圖。 【主要元件符號說明】 【習知技術】 10有機發光二極體元件 100玻璃基板 120陽極圖案層 122陰極層 140 OLED發光多層結構 142電洞傳輸層 H4發光材料層 146電子傳輸層 160絕緣區 180金屬條 【本發明】 30, 30’有機電激發光顯示器 300, 300’ 基板 320, 320’陽極層 322, 322’陰極層 340, 340’ OLED發光多層結構 350, 350’絕緣層 360, 360’絕緣區 370’反射金屬層 15The second panel is shown in the side view along the second A-line A-A. The second Figure A is a top view of another conventional organic light emitting diode element. The figure shown in the third B is a side view along the third A line Λ-A. Figure 4A is a top view of an organic electroluminescent display in accordance with a preferred embodiment of the present invention. The figure shown in the fourth B is a side view along the fourth A line A-A. Figs. 5A to 5F are diagrams showing a method of fabricating an organic electroluminescent portion according to a preferred embodiment of the present invention. 14 1270319 $ Figure 6 is a side elevational view of an organic electroluminescent display in accordance with another preferred embodiment of the present invention. The seventh figure is not an organic electroluminescent display having a top emission structure according to another preferred embodiment of the present invention. The eighth to third figures G are flowcharts for fabricating an organic electroluminescent display in accordance with another preferred embodiment of the present invention. _ The figure shown in the ninth figure is a side view of another conventional organic light emitting diode element. [Main component symbol description] [Prior art] 10 organic light emitting diode element 100 glass substrate 120 anode pattern layer 122 cathode layer 140 OLED light emitting multilayer structure 142 hole transport layer H4 light emitting material layer 146 electron transport layer 160 insulating region 180 Metal strip [Invention] 30, 30' organic electroluminescent display 300, 300' substrate 320, 320' anode layer 322, 322' cathode layer 340, 340' OLED light emitting multilayer structure 350, 350' insulating layer 360, 360' Insulating region 370' reflecting metal layer 15

Claims (1)

1270319 十、申請專利範圍: I 一種有機電激發光顯示器,包含由下至上之: 一基板; 呈陣列狀分布之絕緣區,且每一絕緣區與基板具有一預定之夾角; 位在該基板及該絕緣區之上且具有井狀側面之陰極層;及 位在該陰極層上之OLED發光多層結構及陽極層。 2·如申請專利範圍第1項之有機電激發光顯示器,其中該基板為一 破璃基板。 3·如申請專利範圍第1項之有機電激發光顯示器,其中該絕緣區係 為氧化石夕(SiOx)、氮化矽(SiNx)、氮氧化矽(SiOxNy)等無機膜材質。 4·如申請專利範圍第1項之有機電激發光顯示器,其中該陰極層係 使用高導電係數與高反射率之材質。 5·如申請專利範圍第4項之有機電激發光顯示器,其中該陰極層為 金、銀、紹、銅與鉻等材質或多層複合高導電材料。 ♦ 6·如中請專利範圍第1項之有機電激發光顯示器,其中該絕緣層係 氧化石夕(SiOx)、氮化石夕(SiNx)、氮氧化石夕(Si0xNy)等高透光性材質。 7·如申請專利範圍第丨項之有機電激發光顯示器,其中該絕緣層厚 度可為0.5μπι〜5μπι。 8. 如申請專利範圍第i項之有機電激發光顯示器,其中該陽極層可 以為ITO、IZO或IWO等透明電極薄膜。 9. 如申請專利範圍第1項之有機電激發光顯示it,其中該基板可以 為任何平坦的透光/不透光、軟/硬基板。 16 1270319 - 如申請專利範圍第1項之有撼齋ϋa , θ ’觸激發光顯示H,射該預定之夾 角為90度夾角。 11·如申請專利範圍第1項之有機雷靖 巧飛電激發光顯不器,其中更包含於該 陽極層之上之一霧面偏光膜。 12. -種有機電激發光顯示器製作方法,包含下列步驟; 製備一基板; 在基板上以微影製程或微職刻製程製作多數之絕緣區,且每一絕 緣區與基板具有一預定之夾角; 在該基板及該絕緣區上形成一陰極層; 在《亥陰極層上以微影製程或微影勉刻製程製作絕緣層; 在該陰極層及該絕緣層上成長0LED發光多層結構;以及 在該0LED發光多層結構上形成陽極層。 13. 如申請專利範圍第12之有機電激發光顯示器製作方法,其中該 製作多數之絕緣區步驟係包含 •先塗佈聚亞醯胺(P〇lyimide)等材質,再利用微影製程製作絕緣區。 如申請專利範圍第12項之有機電激發光顯示器製作方法,其中 該製作多數之絕緣區步騍係包含 、 以PVD CVD方式成長氧化石夕(SiOx)、氮化石夕(SiNx)、氮氧化石夕 (SiOxNy)等無機膜;及 利用微影_製程製作絕緣區。 I5·如申凊專利範圍第12項之有機電激發光顯示器製作方法,其中 17 1270319 該製作陰極層步驟包含 先用濺鑛、級、電子束或電鑛等製域長金屬薄膜;及 利用微影蝕刻製程製作金屬陰極層圖案。 I6·如申Μ專利圍第^項之有機電激發光顯示器製作方法,其中 該製作絕緣層步驟包含 先塗佈聚亞醯胺(Polyimide)等材質,及 利用微影製程製作絕緣層。 験 17.如申請專利範圍第12項之有機電激發光顯*器製作方法,其中 該製作絕緣層步驟包含 利用PVD、CVD等方法成長如氧化石夕(si〇x)、氮化石夕_χ)、氧化 矽(SiOxNy)等高透光性材質,厚度約為〇 5〜5μιη ;及 利用微影蝕刻製程,製作絕緣層。 18·如申請專利範圍第12項之有機電激發光顯示器製作方法,其中 該製作OLED發光多層結構步驟係用蒸鍍方式成長〇LED發光多層結構。 B 19.如申請專利範圍第12項之有機電激發光顯示器製作方法,其中 該製作陽極層步驟係用濺鍍、蒸鍍及電子束等方式成長汀〇、IZ〇或lw〇 等透明電極薄膜。 20. 如申請專利範圍第12項之有機電激發光顯示器製作方法,其中 該絕緣區係做成直角結構,以形成垂直井狀之金屬陰極層。 21. 如申請專利範圍第12項之有機電激發光顯示器製作方法,其中 更包含於該陽極層上加上一霧面偏光膜。 18 1270319 22· —種有機電激發光顯示器,包含由下至上之: 一基板, 位在該基板上且呈陣列狀分布之一絕緣區; 位在該絕緣區上之一反射金屬層; 位在該反射金屬層上且被該絕緣區隔開之一陽極層; 位在該陽極層上之一絕緣層; 位在該陽極層及該絕緣層上之一 〇LED發光多層結構;及 位於該OLED發光多層結構上之一透明陰極。 23·如申請專利範圍帛22項之有機電激發光顯*器,其中該反射金 屬層為包含銀之高反射率金屬材料。 24·如申請專利範圍第22項之有機電激發光顯示器,其中該透明陰 極層為包含銀或鋁等金屬之高穿透性金屬材料。 25,如申請專利範圍第22項之有機電激發光顯示器,其中更包含於 該透明陰極上之一霧面偏光膜。 26· -種錢f激發絲示器製作方法,包含下列步驟: 製備一基板; 於該基板上以微織程或郷伽懷_成具有預案之絕緣 區; 形成一反射金屬層於該絕緣區之上; 形成一透明陽極層於該反射金屬層之上; 以微影製程錢織聽獅成—_層概透鴨極之上,· 19 1270319 成長- OLED發光多層結構於該透明陽極及該絕緣層之上;及 形成一透明陰極層於該0LED發光多層結構之上。 27·如申請專利範圍帛%項之有機電激發光顯示器製作方法,其中 該反射金騎步驟係_雜、驗、電子束或驗㈣程敍金屬薄膜, 再利用微影_製程,製作反射金屬層圖案。 / 2&amp;如申請專利範圍第%項之有機電激發光顯示器製作方法,其中 該反射金勒為包含銀之高反射率金屬材料。 29.如申請專利範圍第%項之有機電激發光顯示器製作方法,立中 該透明陰峨賴猶、驗、f細辑餘成長可透光 金屬薄膜,製作該透明陰極圖案。 3〇·申Μ專利耗圍第26項之有機電激發光顯示器製作方法,其中該 透明陰極材f可為銘、銀或其他高穿透性金屬材質。 ^ M.如申。月專利耗圍第26項之有機電激發光顯示器製作 更包含: 八〒 於該陰極上形成一霧面偏光膜。 201270319 X. Patent application scope: I An organic electroluminescent display comprising a bottom-up: a substrate; an insulating region distributed in an array, and each insulating region has a predetermined angle with the substrate; a cathode layer above the insulating region and having a well-side side; and an OLED light-emitting multilayer structure and an anode layer on the cathode layer. 2. The organic electroluminescent display of claim 1, wherein the substrate is a glass substrate. 3. The organic electroluminescent display of claim 1, wherein the insulating region is an inorganic film material such as SiOx, SiNx or SiOxNy. 4. The organic electroluminescent display of claim 1, wherein the cathode layer is made of a material having high conductivity and high reflectance. 5. The organic electroluminescent display of claim 4, wherein the cathode layer is made of gold, silver, sho, copper and chrome or a multi-layer composite high-conductivity material. ♦ 6· The organic electroluminescent display of the first item of the patent scope, wherein the insulating layer is a high light transmissive material such as SiOx, SiNx, Si0xNy or the like. . 7. The organic electroluminescent display of claim </ RTI> wherein the insulating layer has a thickness of from 0.5 μm to 5 μm. 8. The organic electroluminescent display of claim i, wherein the anode layer is a transparent electrode film such as ITO, IZO or IWO. 9. The organic electroluminescent display of the scope of claim 1 wherein the substrate can be any flat light/opaque, soft/hard substrate. 16 1270319 - If the first paragraph of the patent application has a 撼 ϋ a, θ ′ touches the excitation light to display H, and the predetermined angle is 90 degrees. 11. For example, the organic Lei Jing Qiaofei electric excitation light display device of the first application patent scope includes a matte polarizing film on the anode layer. 12. A method for fabricating an organic electroluminescent display comprising the steps of: preparing a substrate; fabricating a plurality of insulating regions on the substrate by a lithography process or a micro-inlay process, and each insulating region has a predetermined angle with the substrate Forming a cathode layer on the substrate and the insulating region; forming an insulating layer on the cathode layer by a lithography process or a lithography process; growing an OLED light emitting multilayer structure on the cathode layer and the insulating layer; An anode layer is formed on the OLED light emitting multilayer structure. 13. The method for fabricating an organic electroluminescent display according to claim 12, wherein the step of fabricating a plurality of insulating regions comprises: first coating a material such as poly(p-lyimide), and then using a lithography process to make insulation. Area. The method for fabricating an organic electroluminescent display according to claim 12, wherein the majority of the insulating regions are formed by PVD CVD, and SiOx, SiNx, and oxynitride are grown by PVD CVD. An inorganic film such as SiOxNy; and an insulating region is formed by a lithography process. I5. The method for fabricating an organic electroluminescent display according to claim 12, wherein the step of fabricating the cathode layer comprises first using a metal film such as a splash, a grade, an electron beam or an electric ore; and utilizing micro The shadow etching process produces a metal cathode layer pattern. I6. The method for fabricating an organic electroluminescent display according to the above-mentioned claim, wherein the step of forming the insulating layer comprises first coating a material such as polyimide and using a lithography process to form an insulating layer.験17. The method for fabricating an organic electroluminescence device according to claim 12, wherein the step of fabricating the insulating layer comprises growing by a method such as PVD or CVD, such as oxidized stone cerium (si〇x), nitriding stone χ χ ), a high light transmissive material such as yttrium oxide (SiOxNy), having a thickness of about 〜5 to 5 μm; and an insulating layer formed by a photolithography etching process. 18. The method of fabricating an organic electroluminescent display according to claim 12, wherein the step of fabricating the OLED light-emitting multilayer structure is grown by evaporation to form an LED light-emitting multilayer structure. B 19. The method for fabricating an organic electroluminescent display according to claim 12, wherein the step of fabricating the anode layer is to form a transparent electrode film such as Ting, IZ or lw by sputtering, evaporation and electron beam. . 20. The method of fabricating an organic electroluminescent display according to claim 12, wherein the insulating region is formed into a right angle structure to form a vertical well-like metal cathode layer. 21. The method of fabricating an organic electroluminescent display according to claim 12, further comprising adding a matte polarizing film to the anode layer. 18 1270319 22 - an organic electroluminescent display comprising a bottom-up: a substrate, an insulating region on the substrate and distributed in an array; a reflective metal layer on the insulating region; An anode layer on the reflective metal layer and separated by the insulating region; an insulating layer on the anode layer; an LED light emitting multilayer structure on the anode layer and the insulating layer; and the OLED A transparent cathode on the light emitting multilayer structure. 23. An organic electroluminescence device as claimed in claim 22, wherein the reflective metal layer is a high reflectivity metal material comprising silver. 24. The organic electroluminescent display of claim 22, wherein the transparent cathode layer is a highly penetrating metallic material comprising a metal such as silver or aluminum. 25. The organic electroluminescent display of claim 22, further comprising a matte polarizing film on the transparent cathode. 26· - a method for fabricating a filament display, comprising the steps of: preparing a substrate; forming a reflective region on the substrate by micro-weaving or gamma-ray; forming a reflective metal layer in the insulating region Forming a transparent anode layer on the reflective metal layer; lithographing the money to the lion to form a _ layer on the top of the duck, 19 1270319 growing - OLED light emitting multilayer structure on the transparent anode and the Above the insulating layer; and forming a transparent cathode layer over the OLED LED multilayer structure. 27. The method for fabricating an organic electroluminescence display according to the patent application scope ,%, wherein the reflection gold riding step is a hybrid film, a hybrid inspection, an electron beam or a test (four) process, and a reflective metal is produced by using a lithography process. Layer pattern. / 2 &amp; A method of fabricating an organic electroluminescent display according to the scope of claim 1 wherein the reflective gold is a high reflectivity metallic material comprising silver. 29. If the method of fabricating the organic electroluminescent display of the patent application category No. 5%, the transparent yin yue, the inspection, and the fine growth of the permeable transparent metal film, the transparent cathode pattern is produced. 3〇·申Μ Patent Consumption Section 26 of the method for fabricating an organic electroluminescent display, wherein the transparent cathode material f can be made of inscription, silver or other highly penetrating metal. ^ M. Rushen. The monthly production of the organic electroluminescent display of the 26th patent consumption includes: A gossip formed a matte polarizing film on the cathode. 20
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Publication number Priority date Publication date Assignee Title
US8979324B2 (en) 2011-12-29 2015-03-17 Industrial Technology Research Institute Optical device structures with the light outcoupling layers

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8979324B2 (en) 2011-12-29 2015-03-17 Industrial Technology Research Institute Optical device structures with the light outcoupling layers

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