TWI268617B - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
TWI268617B
TWI268617B TW094129195A TW94129195A TWI268617B TW I268617 B TWI268617 B TW I268617B TW 094129195 A TW094129195 A TW 094129195A TW 94129195 A TW94129195 A TW 94129195A TW I268617 B TWI268617 B TW I268617B
Authority
TW
Taiwan
Prior art keywords
region
disposed
doped region
lightly doped
thin film
Prior art date
Application number
TW094129195A
Other languages
English (en)
Other versions
TW200709420A (en
Inventor
Chih-Jen Shih
Chun-Hsiang Fang
Te-Hua Teng
Chia-Chien Lu
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Priority to TW094129195A priority Critical patent/TWI268617B/zh
Priority to GB0608478A priority patent/GB2429580B/en
Priority to DE200610020210 priority patent/DE102006020210B4/de
Priority to FR0604706A priority patent/FR2890240A1/fr
Application granted granted Critical
Publication of TWI268617B publication Critical patent/TWI268617B/zh
Publication of TW200709420A publication Critical patent/TW200709420A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
TW094129195A 2005-08-26 2005-08-26 Thin film transistor TWI268617B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW094129195A TWI268617B (en) 2005-08-26 2005-08-26 Thin film transistor
GB0608478A GB2429580B (en) 2005-08-26 2006-04-28 Thin film transistor
DE200610020210 DE102006020210B4 (de) 2005-08-26 2006-05-02 Dünnschichttransistor
FR0604706A FR2890240A1 (fr) 2005-08-26 2006-05-24 Transistor en couche mince

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094129195A TWI268617B (en) 2005-08-26 2005-08-26 Thin film transistor

Publications (2)

Publication Number Publication Date
TWI268617B true TWI268617B (en) 2006-12-11
TW200709420A TW200709420A (en) 2007-03-01

Family

ID=36590028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094129195A TWI268617B (en) 2005-08-26 2005-08-26 Thin film transistor

Country Status (4)

Country Link
DE (1) DE102006020210B4 (zh)
FR (1) FR2890240A1 (zh)
GB (1) GB2429580B (zh)
TW (1) TWI268617B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067287B2 (en) 2008-02-25 2011-11-29 Infineon Technologies Ag Asymmetric segmented channel transistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3072655B2 (ja) * 1991-05-21 2000-07-31 ソニー株式会社 アクティブマトリクス表示装置
JPH09298305A (ja) * 1996-05-08 1997-11-18 Semiconductor Energy Lab Co Ltd 薄膜トランジスタおよびかかる薄膜トランジスタを有する液晶表示装置
JP3274081B2 (ja) * 1997-04-08 2002-04-15 松下電器産業株式会社 薄膜トランジスタの製造方法および液晶表示装置の製造方法
JP3421580B2 (ja) * 1998-06-22 2003-06-30 株式会社東芝 撮像装置
GB2358083B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor and its manufacturing method
JP3522216B2 (ja) * 2000-12-19 2004-04-26 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
US6897477B2 (en) * 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
KR100485531B1 (ko) * 2002-04-15 2005-04-27 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막트랜지스터와 그 제조방법
TWI231996B (en) * 2003-03-28 2005-05-01 Au Optronics Corp Dual gate layout for thin film transistor
JP2005064123A (ja) * 2003-08-08 2005-03-10 Sharp Corp 薄膜トランジスタおよび表示装置

Also Published As

Publication number Publication date
GB2429580B (en) 2008-01-09
DE102006020210A1 (de) 2007-03-01
DE102006020210B4 (de) 2012-12-06
GB2429580A (en) 2007-02-28
GB0608478D0 (en) 2006-06-07
TW200709420A (en) 2007-03-01
FR2890240A1 (fr) 2007-03-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees