TWI267189B - Cell of dynamic random access memory and array structure of the same - Google Patents
Cell of dynamic random access memory and array structure of the sameInfo
- Publication number
- TWI267189B TWI267189B TW094108145A TW94108145A TWI267189B TW I267189 B TWI267189 B TW I267189B TW 094108145 A TW094108145 A TW 094108145A TW 94108145 A TW94108145 A TW 94108145A TW I267189 B TWI267189 B TW I267189B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- cell
- random access
- access memory
- dynamic random
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 5
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094108145A TWI267189B (en) | 2005-03-17 | 2005-03-17 | Cell of dynamic random access memory and array structure of the same |
US11/163,222 US20060208298A1 (en) | 2005-03-17 | 2005-10-11 | Memory cell of dynamic random access memory and array structure thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094108145A TWI267189B (en) | 2005-03-17 | 2005-03-17 | Cell of dynamic random access memory and array structure of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200635033A TW200635033A (en) | 2006-10-01 |
TWI267189B true TWI267189B (en) | 2006-11-21 |
Family
ID=37009407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094108145A TWI267189B (en) | 2005-03-17 | 2005-03-17 | Cell of dynamic random access memory and array structure of the same |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060208298A1 (zh) |
TW (1) | TWI267189B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101152820B1 (ko) | 2006-10-31 | 2012-06-12 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그의 제조방법 |
TWI375300B (en) * | 2008-07-22 | 2012-10-21 | Nanya Technology Corp | Dynamic random access memory structure and method of making the same |
CN108615732B (zh) * | 2016-12-09 | 2019-06-28 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
TWI736947B (zh) * | 2019-08-05 | 2021-08-21 | 力晶積成電子製造股份有限公司 | 記憶體結構及其製造方法 |
US11756988B2 (en) * | 2020-08-20 | 2023-09-12 | Nanya Technology Corporation | Semiconductor structure and method for fabricating the same |
CN113270407B (zh) * | 2021-05-18 | 2023-03-24 | 复旦大学 | 动态随机存取存储器及其制备工艺 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5508541A (en) * | 1992-09-22 | 1996-04-16 | Kabushiki Kaisha Toshiba | Random access memory device with trench-type one-transistor memory cell structure |
TW415010B (en) * | 1999-04-20 | 2000-12-11 | Mosel Vitelic Inc | Method for fabricating trench capacitor |
US6489646B1 (en) * | 2002-01-23 | 2002-12-03 | Winbond Electronics Corporation | DRAM cells with buried trench capacitors |
-
2005
- 2005-03-17 TW TW094108145A patent/TWI267189B/zh not_active IP Right Cessation
- 2005-10-11 US US11/163,222 patent/US20060208298A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060208298A1 (en) | 2006-09-21 |
TW200635033A (en) | 2006-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |