TWI267128B - Exposure apparatus, exposure method and semiconductor device production method - Google Patents

Exposure apparatus, exposure method and semiconductor device production method

Info

Publication number
TWI267128B
TWI267128B TW093139259A TW93139259A TWI267128B TW I267128 B TWI267128 B TW I267128B TW 093139259 A TW093139259 A TW 093139259A TW 93139259 A TW93139259 A TW 93139259A TW I267128 B TWI267128 B TW I267128B
Authority
TW
Taiwan
Prior art keywords
electron beam
scan lines
scan
rise
temperature
Prior art date
Application number
TW093139259A
Other languages
English (en)
Other versions
TW200532387A (en
Inventor
Shigeru Moriya
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200532387A publication Critical patent/TW200532387A/zh
Application granted granted Critical
Publication of TWI267128B publication Critical patent/TWI267128B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2045—Exposure; Apparatus therefor using originals with apertures, e.g. stencil exposure masks
    • G03F7/2047—Exposure with radiation other than visible light or UV light, e.g. shadow printing, proximity printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31794—Problems associated with lithography affecting masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093139259A 2003-12-18 2004-12-17 Exposure apparatus, exposure method and semiconductor device production method TWI267128B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003420685A JP2005183577A (ja) 2003-12-18 2003-12-18 露光装置、露光方法、および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200532387A TW200532387A (en) 2005-10-01
TWI267128B true TWI267128B (en) 2006-11-21

Family

ID=34510661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093139259A TWI267128B (en) 2003-12-18 2004-12-17 Exposure apparatus, exposure method and semiconductor device production method

Country Status (5)

Country Link
US (1) US7326940B2 (zh)
EP (1) EP1544895A3 (zh)
JP (1) JP2005183577A (zh)
KR (1) KR20050061383A (zh)
TW (1) TWI267128B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI623015B (zh) * 2015-09-24 2018-05-01 Advantest Corp Exposure device and exposure method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5701201B2 (ja) * 2011-12-19 2015-04-15 株式会社Ｓｅｎ イオン注入方法及びイオン注入装置
CN103093851A (zh) * 2013-01-21 2013-05-08 江苏达胜加速器制造有限公司 电子束流大小的导向控制装置
US10446367B2 (en) * 2018-03-07 2019-10-15 Kla-Tencor Corporation Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2837590A1 (de) 1978-08-29 1980-03-13 Ibm Deutschland Verfahren zur schattenwurfbelichtung
JP2837743B2 (ja) * 1990-06-27 1998-12-16 富士通株式会社 荷電粒子ビーム露光方法およびそれに用いるステンシルマスク
US5177365A (en) * 1991-01-11 1993-01-05 Fujitsu Limited Charged particle beam exposure device for improving the heating state of block mask
JP3689949B2 (ja) * 1995-12-19 2005-08-31 株式会社ニコン 投影露光装置、及び該投影露光装置を用いたパターン形成方法
US5847959A (en) 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
US5831272A (en) 1997-10-21 1998-11-03 Utsumi; Takao Low energy electron beam lithography
JP2000003847A (ja) * 1998-06-15 2000-01-07 Canon Inc 荷電粒子線縮小転写装置及びデバイス製造方法
US20020084429A1 (en) 2000-10-17 2002-07-04 Craighead Harold G. Electron-beam patterning of functionalized self-assembled monolayers
US6724002B2 (en) 2001-01-31 2004-04-20 Applied Materials, Inc. Multiple electron beam lithography system with multiple beam modulated laser illumination
JP3674573B2 (ja) 2001-06-08 2005-07-20 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
KR100925075B1 (ko) 2001-11-12 2009-11-04 소니 가부시끼 가이샤 상보 마스크 및 그 제작 방법, 및 노광 방법, 및 반도체장치 및 그 제조 방법
DE10295952T5 (de) 2001-12-04 2004-04-29 Sony Corp. Maske, Verfahren zum Herstellen derselben sowie Verfahren zum Herstellen eines Halbleiterbauteils
JP3675421B2 (ja) 2002-03-28 2005-07-27 ソニー株式会社 マスクパターン補正方法、マスク製造方法、マスクおよび半導体装置の製造方法
KR101013347B1 (ko) * 2002-04-09 2011-02-10 가부시키가이샤 니콘 노광방법, 노광장치, 및 디바이스 제조방법
JP2004207385A (ja) * 2002-12-24 2004-07-22 Rohm Co Ltd マスク、その製造方法およびこれを用いた半導体装置の製造方法
JP4738723B2 (ja) * 2003-08-06 2011-08-03 キヤノン株式会社 マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI623015B (zh) * 2015-09-24 2018-05-01 Advantest Corp Exposure device and exposure method

Also Published As

Publication number Publication date
EP1544895A2 (en) 2005-06-22
JP2005183577A (ja) 2005-07-07
EP1544895A3 (en) 2007-01-17
US20050133734A1 (en) 2005-06-23
KR20050061383A (ko) 2005-06-22
TW200532387A (en) 2005-10-01
US7326940B2 (en) 2008-02-05

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