TWI266367B - Method for smoothing the sidewall ripples of an etching structure - Google Patents
Method for smoothing the sidewall ripples of an etching structureInfo
- Publication number
- TWI266367B TWI266367B TW92131917A TW92131917A TWI266367B TW I266367 B TWI266367 B TW I266367B TW 92131917 A TW92131917 A TW 92131917A TW 92131917 A TW92131917 A TW 92131917A TW I266367 B TWI266367 B TW I266367B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching structure
- smoothing
- ripples
- sidewall
- etching
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92131917A TWI266367B (en) | 2003-11-14 | 2003-11-14 | Method for smoothing the sidewall ripples of an etching structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92131917A TWI266367B (en) | 2003-11-14 | 2003-11-14 | Method for smoothing the sidewall ripples of an etching structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200516662A TW200516662A (en) | 2005-05-16 |
TWI266367B true TWI266367B (en) | 2006-11-11 |
Family
ID=38191560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92131917A TWI266367B (en) | 2003-11-14 | 2003-11-14 | Method for smoothing the sidewall ripples of an etching structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI266367B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8362595B2 (en) | 2007-12-21 | 2013-01-29 | Sanyo Semiconductor Co., Ltd. | Mesa semiconductor device and method of manufacturing the same |
US8368181B2 (en) | 2007-12-25 | 2013-02-05 | Sanyo Semiconductor Co., Ltd. | Mesa semiconductor device and method of manufacturing the same |
US8426949B2 (en) | 2008-01-29 | 2013-04-23 | Sanyo Semiconductor Manufacturing Co., Ltd. | Mesa type semiconductor device |
US9257504B2 (en) | 2002-09-29 | 2016-02-09 | Advanced Analogic Technologies Incorporated | Isolation structures for semiconductor devices |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI495009B (zh) * | 2010-02-12 | 2015-08-01 | Advanced Micro Fab Equip Inc | A Plasma Etching Method with Silicon Insulating Layer |
WO2017150628A1 (ja) * | 2016-03-02 | 2017-09-08 | 国立研究開発法人産業技術総合研究所 | 微細立体構造形成方法、及び微細立体構造 |
-
2003
- 2003-11-14 TW TW92131917A patent/TWI266367B/zh active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9257504B2 (en) | 2002-09-29 | 2016-02-09 | Advanced Analogic Technologies Incorporated | Isolation structures for semiconductor devices |
US9905640B2 (en) | 2002-09-29 | 2018-02-27 | Skyworks Solutions (Hong Kong) Limited | Isolation structures for semiconductor devices including trenches containing conductive material |
US10074716B2 (en) | 2002-09-29 | 2018-09-11 | Skyworks Solutions (Hong Kong) Limited | Saucer-shaped isolation structures for semiconductor devices |
US8362595B2 (en) | 2007-12-21 | 2013-01-29 | Sanyo Semiconductor Co., Ltd. | Mesa semiconductor device and method of manufacturing the same |
US8368181B2 (en) | 2007-12-25 | 2013-02-05 | Sanyo Semiconductor Co., Ltd. | Mesa semiconductor device and method of manufacturing the same |
US8426949B2 (en) | 2008-01-29 | 2013-04-23 | Sanyo Semiconductor Manufacturing Co., Ltd. | Mesa type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TW200516662A (en) | 2005-05-16 |
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