TW200516662A - Method for smoothing the sidewall ripples of an etching structure - Google Patents
Method for smoothing the sidewall ripples of an etching structureInfo
- Publication number
- TW200516662A TW200516662A TW092131917A TW92131917A TW200516662A TW 200516662 A TW200516662 A TW 200516662A TW 092131917 A TW092131917 A TW 092131917A TW 92131917 A TW92131917 A TW 92131917A TW 200516662 A TW200516662 A TW 200516662A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching structure
- smoothing
- ripples
- sidewall
- etching
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A method for smoothing the sidewall ripples of an etching structure applies to a substrate with an etching structure formed by deep reactive ion etching process. By forming an offset layer on the deep etching structure and then using the high temperature reflow process to smooth the sidewall ripples of the etching structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92131917A TWI266367B (en) | 2003-11-14 | 2003-11-14 | Method for smoothing the sidewall ripples of an etching structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92131917A TWI266367B (en) | 2003-11-14 | 2003-11-14 | Method for smoothing the sidewall ripples of an etching structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200516662A true TW200516662A (en) | 2005-05-16 |
TWI266367B TWI266367B (en) | 2006-11-11 |
Family
ID=38191560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92131917A TWI266367B (en) | 2003-11-14 | 2003-11-14 | Method for smoothing the sidewall ripples of an etching structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI266367B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460819B (en) * | 2006-05-31 | 2014-11-11 | Advanced Analogic Tech Inc | Isolation structures for integrated circuits and modular methods of forming the same |
TWI495009B (en) * | 2010-02-12 | 2015-08-01 | Advanced Micro Fab Equip Inc | A Plasma Etching Method with Silicon Insulating Layer |
TWI646598B (en) * | 2016-03-02 | 2019-01-01 | 國立研究開發法人產業技術總合研究所 | Microscopic three-dimensional structure forming method and microscopic three-dimensional structure |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5074172B2 (en) | 2007-12-21 | 2012-11-14 | オンセミコンダクター・トレーディング・リミテッド | Mesa type semiconductor device and manufacturing method thereof |
JP2009158589A (en) | 2007-12-25 | 2009-07-16 | Sanyo Electric Co Ltd | Mesa semiconductor device and method of manufacturing the method |
TW200933899A (en) | 2008-01-29 | 2009-08-01 | Sanyo Electric Co | Mesa type semiconductor device and method for making the same |
-
2003
- 2003-11-14 TW TW92131917A patent/TWI266367B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460819B (en) * | 2006-05-31 | 2014-11-11 | Advanced Analogic Tech Inc | Isolation structures for integrated circuits and modular methods of forming the same |
TWI495009B (en) * | 2010-02-12 | 2015-08-01 | Advanced Micro Fab Equip Inc | A Plasma Etching Method with Silicon Insulating Layer |
TWI646598B (en) * | 2016-03-02 | 2019-01-01 | 國立研究開發法人產業技術總合研究所 | Microscopic three-dimensional structure forming method and microscopic three-dimensional structure |
Also Published As
Publication number | Publication date |
---|---|
TWI266367B (en) | 2006-11-11 |
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