TWI265203B - Sputtering target and the manufacture thereof - Google Patents

Sputtering target and the manufacture thereof

Info

Publication number
TWI265203B
TWI265203B TW092123232A TW92123232A TWI265203B TW I265203 B TWI265203 B TW I265203B TW 092123232 A TW092123232 A TW 092123232A TW 92123232 A TW92123232 A TW 92123232A TW I265203 B TWI265203 B TW I265203B
Authority
TW
Taiwan
Prior art keywords
target
divided
thickness
manufacture
sputtering target
Prior art date
Application number
TW092123232A
Other languages
Chinese (zh)
Other versions
TW200422417A (en
Inventor
Naoki Ono
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200422417A publication Critical patent/TW200422417A/en
Application granted granted Critical
Publication of TWI265203B publication Critical patent/TWI265203B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a sputtering target and the manufacture thereof. The target of the present Invention would not occur arching, is capable of forming a film steadily and of preventing the quality of a substrate plate from degrading owing to particles when nodules is happen. A target material constituted from a plurality of divided target materials is bonded with a backing plate through a bonding material to form a sputtering target. Among the divided target material, in connection part between divided targets having different thickness, the connection part of a divided target material having thicker thickness form a level part having a thickness substantially the same as that of the divide target materials having thinner thickness. And, on the divided target material having thicker thickness, a continuous inclined part is formed from the level part to an upper face of the target.
TW092123232A 2002-08-26 2003-08-22 Sputtering target and the manufacture thereof TWI265203B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002245729A JP4318439B2 (en) 2002-08-26 2002-08-26 Sputtering target and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200422417A TW200422417A (en) 2004-11-01
TWI265203B true TWI265203B (en) 2006-11-01

Family

ID=32053833

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092123232A TWI265203B (en) 2002-08-26 2003-08-22 Sputtering target and the manufacture thereof

Country Status (3)

Country Link
JP (1) JP4318439B2 (en)
KR (1) KR100583323B1 (en)
TW (1) TWI265203B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5228245B2 (en) * 2007-08-31 2013-07-03 株式会社三井金属韓国 Sputtering target
JP5412728B2 (en) * 2008-02-08 2014-02-12 大日本印刷株式会社 Target plate and sputtering equipment
US9752228B2 (en) * 2009-04-03 2017-09-05 Applied Materials, Inc. Sputtering target for PVD chamber
WO2012066810A1 (en) 2010-11-19 2012-05-24 Jx日鉱日石金属株式会社 Ito sputtering target
CN102791904B (en) * 2011-01-26 2015-06-17 吉坤日矿日石金属株式会社 Sputtering target
CN110312821B (en) * 2017-01-09 2022-08-23 应用材料公司 Method, apparatus and target for depositing material on a substrate in a vacuum deposition process
CN110892089B (en) * 2017-08-01 2022-05-24 出光兴产株式会社 Sputtering target, method for forming oxide semiconductor film, and backing plate
US20210230739A1 (en) * 2020-01-27 2021-07-29 Applied Materials, Inc. Physical Vapor Deposition Apparatus And Methods With Gradient Thickness Target

Also Published As

Publication number Publication date
KR20040018939A (en) 2004-03-04
TW200422417A (en) 2004-11-01
KR100583323B1 (en) 2006-05-25
JP2004083985A (en) 2004-03-18
JP4318439B2 (en) 2009-08-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees