TWI263708B - Process for depositing multicomponent semiconductor layers on at least one substrate - Google Patents

Process for depositing multicomponent semiconductor layers on at least one substrate

Info

Publication number
TWI263708B
TWI263708B TW092103637A TW92103637A TWI263708B TW I263708 B TWI263708 B TW I263708B TW 092103637 A TW092103637 A TW 092103637A TW 92103637 A TW92103637 A TW 92103637A TW I263708 B TWI263708 B TW I263708B
Authority
TW
Taiwan
Prior art keywords
gas
substrate holder
outlet surface
inlet element
gas outlet
Prior art date
Application number
TW092103637A
Other languages
English (en)
Other versions
TW200305657A (en
Inventor
Holger Juergensen
Gerd Strauch
Original Assignee
Aixtron Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag filed Critical Aixtron Ag
Publication of TW200305657A publication Critical patent/TW200305657A/zh
Application granted granted Critical
Publication of TWI263708B publication Critical patent/TWI263708B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW092103637A 2002-02-22 2003-02-21 Process for depositing multicomponent semiconductor layers on at least one substrate TWI263708B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10207461A DE10207461A1 (de) 2002-02-22 2002-02-22 Verfahren und Vorrichtung zum Abscheiden von mehrkomponentigen Halbleiterschichten auf mindestens einem Substrat

Publications (2)

Publication Number Publication Date
TW200305657A TW200305657A (en) 2003-11-01
TWI263708B true TWI263708B (en) 2006-10-11

Family

ID=27674839

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092103637A TWI263708B (en) 2002-02-22 2003-02-21 Process for depositing multicomponent semiconductor layers on at least one substrate

Country Status (7)

Country Link
EP (1) EP1481117B1 (zh)
JP (1) JP4776168B2 (zh)
KR (1) KR20040091651A (zh)
AU (1) AU2003208860A1 (zh)
DE (2) DE10207461A1 (zh)
TW (1) TWI263708B (zh)
WO (1) WO2003071011A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409356B (zh) * 2007-12-24 2013-09-21 K C Tech Co Ltd 一種薄膜沈積裝置及其沈積方法
TWI468543B (zh) * 2013-08-30 2015-01-11 Substrate transfer and processing system and substrate transfer and processing methods
TWI468544B (zh) * 2013-08-30 2015-01-11 Substrate transfer and processing system and its equipment
TWI496918B (zh) * 2013-02-05 2015-08-21 Adpv Technology Ltd Intetrust Gas release device for coating process

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5508916B2 (ja) * 2009-06-24 2014-06-04 株式会社豊田中央研究所 表面処理シミュレーション装置及び表面処理システム
DE102012101717A1 (de) 2012-03-01 2013-09-05 Aixtron Se Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
DE102014117388A1 (de) 2014-11-27 2016-06-02 Aixtron Se Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors
CN114277359B (zh) * 2021-12-28 2023-11-28 新美光(苏州)半导体科技有限公司 进气管道、化学气相沉积炉及向其通入前驱体的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990010092A1 (en) * 1989-02-24 1990-09-07 Massachusetts Institute Of Technology A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition
JPH06188202A (ja) * 1992-12-18 1994-07-08 Canon Inc Ｃｖｄ装置
JPH0677136A (ja) * 1992-08-27 1994-03-18 Hitachi Cable Ltd 化合物半導体薄膜結晶の気相成長方法及び気相成長装置
JPH06349748A (ja) * 1993-06-02 1994-12-22 Furukawa Electric Co Ltd:The 半導体気相成長装置
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
JP3397467B2 (ja) * 1994-09-17 2003-04-14 株式会社東芝 基板処理装置
JP3715017B2 (ja) * 1996-02-14 2005-11-09 日本電信電話株式会社 化合物半導体の結晶成長法
JPH09316644A (ja) * 1996-05-23 1997-12-09 Nippon Sanso Kk Ｃｖｄ装置のシャワーヘッドノズル
WO2001004377A1 (en) * 1999-07-13 2001-01-18 Aixtron Ag Seal means and its application in deposition reactor
JP2001247967A (ja) * 1999-12-30 2001-09-14 Applied Materials Inc ジルコン酸チタン酸鉛膜の有機メタル化学気相堆積
US6403479B1 (en) * 2000-03-17 2002-06-11 Hitachi, Ltd. Process for producing semiconductor and apparatus for production
JP2001313271A (ja) * 2000-04-27 2001-11-09 Hitachi Ltd 半導体製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409356B (zh) * 2007-12-24 2013-09-21 K C Tech Co Ltd 一種薄膜沈積裝置及其沈積方法
TWI496918B (zh) * 2013-02-05 2015-08-21 Adpv Technology Ltd Intetrust Gas release device for coating process
TWI468543B (zh) * 2013-08-30 2015-01-11 Substrate transfer and processing system and substrate transfer and processing methods
TWI468544B (zh) * 2013-08-30 2015-01-11 Substrate transfer and processing system and its equipment

Also Published As

Publication number Publication date
EP1481117B1 (de) 2007-10-24
AU2003208860A1 (en) 2003-09-09
JP2005518104A (ja) 2005-06-16
JP4776168B2 (ja) 2011-09-21
WO2003071011A1 (de) 2003-08-28
DE50308463D1 (de) 2007-12-06
DE10207461A1 (de) 2003-09-04
TW200305657A (en) 2003-11-01
KR20040091651A (ko) 2004-10-28
EP1481117A1 (de) 2004-12-01

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees