1262735 九、發明說明： Γ發明所屬之技術領域】 本發明是有關於一種麥克風及其製造方法，特別是指 種電容式的麥克風及其製造方法。 【先前技術】 由於電子產品的發展趨勢是一直往體積輕薄、小巧的 方向發展，麥克風的發展當然也不例外。而目前，以封裝 兒谷式振膜晶片而成的電容式麥克風，由於用於感應聲能 並將之轉換成電容變化的電容式振膜晶片，其微型化的發 展腳步可隨著微機電製程技術、半導體製程技術的進步而 同步發展，因此成為主要的發展對象。 目前的電容式振膜晶片可區分為單晶片式與雙晶片式 兩種。單晶片式的電容式振膜晶片顧名思義是以單一美材 晶片U多數道半導體製程製備形m片式㈣容 式振膑晶片則是應用多數道半導體製程製備分別形成「北 =片」與「對應振膜晶片」，再將二晶片結合（b〇nding) 广式振膜晶片，並在結合的同時，由背板晶片盘對應 振朕晶片共同形成出麥克風作動時所需的「振動π - 製程=是單晶片式或是雙晶片式的電容式振膜^，其 成麥克風必備的「振膜」與「氣室」，而進而形 多、並過孔至」’而需體蝕刻的部分越 此，減^ 也越不易掌控，製程良率也就越低，因 花費，是單晶片式或是雙晶片式的電容=的製程時間 甩奋式振膜晶片的改善 1262735 研究方向之一。 此外，雙晶片式的電容式振膜晶 晶片與晶片的結合（bondi )， t備的過程中， 率偏低的技術製程之一，也是業者 ' 而屬良 一。 ，九改進的方向之 因此，如何改善體蝕刻的製 合製程良率，或是根本上提出封裝丄=善晶片結 晶片而成的麥克風，是孝界、 ^/式之笔容式振膜 【發明内容】 4 —直努力的目標。 本明之目的，即在提供一種封裝介於單曰片 式與雙晶片式電容式振膜曰、早日日片 式振胰曰曰片之振膜晶片而成的麥克風， 以及此種麥克風的製造方法。 。於是，本發明—種麥克風的製造方法，包含以下步驟 (〇製備一基板，使該基板具有一表面、一底面、— 夾設於該表面、底面之間的電路佈局，及一自該表面向該 底面方向凹陷的凹槽。 ()將場效電晶體對應地連結在該凹槽中，並與該 電路佈局形成預定電連接。 (C)將一具有複數穿孔的背板以該些穿孔 對應於該凹 槽地連結於該表面。 (d )將一具有一振膜的振膜晶片以該振膜相間隔且對 應於該些穿孔地與該f板相連結。 (e )將一可供聲能穿通之罩殼對應於該振膜地與該基 1262735 該基板之底面共同將_片、 并/與該基板封容而與外界相隔絕。 士二卜」以上述的製造方法所製成的麥克風，包含一基 反▲场效電晶體、—背板、一振膜晶片’及一罩殼。 °亥基板具有一表面、-底面、-連結該表面動亥底面 的側周面、-夹設在該表面與底面之間的電路佈：：及一 自该表面向該底面方向形成的凹槽。 該場效電 形成電連接， 一氣室。 晶體，連結固定在該凹槽内並與該電路佈局 該凹槽埋置有該場效電晶體之剩餘空間形成1262735 IX. INSTRUCTIONS: TECHNICAL FIELD The present invention relates to a microphone and a method of manufacturing the same, and more particularly to a condenser microphone and a method of fabricating the same. [Prior Art] Since the development trend of electronic products has been moving toward a thin and small size, the development of microphones is no exception. At present, a condenser microphone made of a packaged quartz diaphragm is a micro-electromechanical process technology that can be used in the development of miniaturization due to the use of a capacitive diaphragm for sensing acoustic energy and converting it into a capacitance change. The advancement of semiconductor process technology has been synchronized, and has therefore become a major development target. Current capacitive diaphragm wafers can be classified into single-wafer and dual-wafer. The single-chip capacitive diaphragm wafer, as the name suggests, is a single-material wafer U-multi-channel semiconductor process to prepare a m-type (4) capacitive vibrating wafer, which is formed by the majority of semiconductor process preparation to form "North = slice" and "correspondence" respectively. "Vibration film wafer", the two wafers are combined with the wide-type diaphragm film, and at the same time, the back-plate wafer disk corresponding to the vibrating wafer together forms the "vibration π - process required for the microphone to operate. = is a single-chip or two-chip capacitive diaphragm ^, which becomes a necessary "diaphragm" and "air chamber" for the microphone, and thus has a large number of shapes and passes through the hole to the '' Therefore, the more difficult it is to control, the lower the yield of the process. Because of the cost, it is one of the research directions of the single-wafer or two-chip capacitor=the process time of the exciting diaphragm wafer. In addition, the combination of a two-chip capacitive diaphragm wafer and a wafer (bondi), one of the technical processes with a low rate, is also a good one. Therefore, the direction of the improvement of the nine, how to improve the yield of the body etching process, or the basic package of the 丄 = good wafer crystal chip, is the filial piety, ^ / style pen-type diaphragm [ SUMMARY OF THE INVENTION 4 - The goal of direct efforts. The purpose of the present invention is to provide a microphone for packaging a diaphragm wafer of a single-chip type and a two-chip type capacitive diaphragm, an early day-type diaphragm, and a method of manufacturing the same. . . Therefore, the method for manufacturing a microphone of the present invention comprises the steps of: preparing a substrate such that the substrate has a surface, a bottom surface, a circuit layout sandwiched between the surface and the bottom surface, and a surface from the surface a groove recessed in the bottom direction. () A field effect transistor is correspondingly coupled in the groove and forms a predetermined electrical connection with the circuit layout. (C) A back plate having a plurality of perforations is corresponding to the holes The groove is coupled to the surface. (d) A diaphragm wafer having a diaphragm is spaced apart from the diaphragm by the diaphragm and corresponding to the holes. (e) The acoustic energy feedthrough cover corresponding to the diaphragm and the bottom surface of the substrate 1262735 together with the substrate, and/with the substrate sealed from the outside. The second manufacturing method is made by the above manufacturing method. The microphone comprises a base anti-▲ field effect transistor, a back plate, a diaphragm wafer, and a cover. The substrate has a surface, a bottom surface, and a side surface of the bottom surface of the surface. a circuit cloth sandwiched between the surface and the bottom surface:: and a self To the bottom surface of the recessed surface formed in the direction. The field effect electrical connection, air chamber. Crystals, connected and fixed in the recess and is embedded within the remaining space of the crystal field effect of the circuit layout and the recess is formed
該背板由導體材料形成，具有複數形成預定圖像的穿 孔，以該複數穿孔對應於該凹槽地與該基板之表面相連結 ，同時與該電路佈局對應地電連接。 該振膜晶片具有一電極層、一駐極體層、一夾連在該 私極層與该駐極體層之間的振膜，及一自該駐極體層向相 反於該電極層方向形成的分隔單元，該電極層以導電材料 形成，該駐極體層以駐極體材料形成並帶有電荷，該振膜鲁 以絕緣材料形成，且可感應聲能並對應形變，該振膜單元 以該分隔單元與該背板相連結，使該駐極體層、該分隔單 元與該背板共同形成一振動空間，該振動空間以該背板之 複數穿孔與該氣室相連通並供該振膜形變，該電極層、該 駐極體層與該背板共同形成可對應該振膜形變而變化之電 容。 該罩殼可供聲能穿通，自該振膜晶片向該基板方向將 7 1262735 該振膜晶片、該背板、該場效電晶體與該基板罩覆後與該 基板之側周面相連結。 本發明的功效在於提供一種以介於單晶片式的電容式 振膜晶片與雙晶片式的電容式振膜晶片之間的振膜晶片封 裝而成的麥克風，以提高整體製程良率、降低生產成本。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配a芩考圖式之一個較佳實施例的詳細說明中，將可 清楚的呈現。 *閱圖1’本發明麥克風的一較佳實施例，用以感應聲 能、並將感應之聲能轉換成電子信號以供後續運算應用。 麥克風1包含-基板u、一場效電晶體12 (FET)、— 背板13、一振膜晶片14，及一罩殼15。 基板11即一般業界所稱的印刷電路板（PCB)，以導電 材料（通常是㈣）配合高分子絕緣物（通常I ρΕτ或ρι ^壓合成單層或複數層結構製成，在本例圖示中僅以二層 絕緣層中夾設單一層的導電材料為例說明。 基板11具有一表面111 底面112、一連結表面m -、底面112的側周面i i 3、一 .讯 又5又於表面111與底面112之 間的電路佈局1Μ、一自砉而^人 自表面111向下形成的凹槽115、一 弟一電連接埠i 16，及一佑讲认产 i i 7。 "又於底面112的第二電連接埠 电峪佈局114、第 導^電連接埠116、117分別是 ’兒材料例如銅、鋁箄為铋 寻為材科，對應所欲電連接的場效 1262735 晶體12、背板13、振膜晶片14’以及後續所需應用之電子 產品的電路板（圖未示出）’彼此對應電連接地佈陳 ⑽）形成，第—、二電連接埠116、117並分別包含多數銲 墊，用以後續視所需與例如錫膏、銲錫、各式電連接線（ wire)、電連接凸塊（ball/bump)電連接所用。第一電連接 埠116的多數銲墊分別對應地佈設在表面lu上，以及界定 形成凹槽115的周面上，圖*中僅分別以_鮮塾作表示。第 二電連接埠117可再利用例如錫膏、銲錫等材料對應地電連 接並連結S]定在後續所需應用之f子產品的電路板（圖未 示出）上。 場效電晶體12，對應地連結固定在凹槽115内，並與 佈設在形成凹槽115的周面上的第一電連接埠ιΐ6的銲墊形 成電連接，用以將電容變化對應轉換成電子信號。 背板13由導體材料，例如鎳電鍍形成，厚度在 左右，具有複數形成預；t圖像的穿孔131。背板13以複數 穿孔⑶對應於凹冑115地與堆疊連結在基板u表面⑴ 上，同時與佈設在表® U1的第一電連料n㈣其餘鲜塾 形成對應電連接。背板13與凹槽115未被場效電晶體⑴占 據的剩餘空間共同形成麥克風丨的氣室16。 振膜晶片14 ’具有-振膜141、一形成在振膜i4i上 表面的電極層142、一形成在振们41下表面的駐極體層 143,及一由振膜141周緣更向下形成之分隔單元145。 電極層142以導體為封料形成，駐極體層M3以駐極 體材料形成，且在充電後帶預定電荷，減i4i由一層氣 1262735 化矽與-層氧化矽共同形成’可絕緣而使電極層142與駐 極體層143不相電導通。 分隔單元145以例如二氧化石夕、卿（苯環丁晞）、 SINR、polyimide、或業界習稱之QTT。1 P ^ 榔之SU_8等光阻材質，自駐極 體層143底面向下形成。 振膜晶片14以振膜141對應於背板η之複數穿孔131 ，並藉分隔料145堆叠連結在13上，藉由分隔單元 145、振膜141底面與背板13共同形成一利用背板13之複 數穿孔m與氣室16相連通的振動空間17，使振膜⑷可 以因應感應到的聲能自由形變’同時，電極層142、駐極體 層⑷與背板13共同形成可對應振膜141形變而變化之電 容。 罩般15具有—環形的連結壁⑸，及-與連結壁151 連結且可供聲能穿通之穿透壁152，連結壁151與穿透壁 152共同界定出一具有一開口的封置空間18，罩殼μ以開 此自振膜曰曰片14向基板} i方向罩覆’而將振膜晶片μ、 月板13 %效電晶體丨2與基板1丨容置於封置空間18中， 並以連結壁151内周面與基板Π之側周面⑴相連結，而 以基板U封閉開口’同時罩殼15罩覆振膜晶片時與電 極層142電導通，而作為接地之用。 ^外界的聲能穿透過罩殼15的穿透壁152後，作用到 '"二片4的振膜141，振膜141因此相對應地產生形變 ’而使背板13與振膜141的間距產生變化，也就是使電極 層142、駐極體層⑷與背板13共同形成的電容產生對應 10 1262735 'k：化’場效電晶體彳9 ^ ^ “體12再將電容變化轉換 續電子產品運算使用。 电于k唬，供後 上述麥克風1在配合 — 於振膜晶片14的詳細製造方回、不關於月才反13、圖3關 製造的過程說明後，=及如圖4所示整體封裝 夂田J更加清楚的明白。 先參閱圖2,上述麥克風i 3 在例如矽基材51上， 疋先以步驟21 d_ 為材料形成一分離層52。 者、仃步驟22，在分離層5 圖像的遮覆層53。此…/ 以先阻形成具有預定 此‘设層53的圖像是對應 複數穿孔⑶的分布位置態樣，…：之 界所稱的厚光阻層，厚度大約在6G〜1GG/Zmr 般業 然後進行步驟23，自 離層52未被遮覆声53、廣声+ 區域，以鎳為材料向上電 ⑨層53遮覆之 "厚的金屬層54。 厚度較遮覆層薄，約為5〇 接著進行步驟24,蝕刻移除遮 覆層53所遮覆...... a ，同時使得被遮 k设之分離層52的區域裡 遮覆層被移除而成 成稞路，此時金屬層54因 取t出多數對應於穿孔 最後進行步、 牙孔131的孔洞55。 夕鄉25，自稞露出之分 始蝕刻分離層士 3 52的部分區域開 ’直到完全移除分離層5 ^你 .M 即與基材51分雜 後’至屬層54 刀離出的金屬層54即為昔姑 麥閱圖3， 「马月板13。 上返振膜晶片14是先牛 61相反之兩表 无^步驟31，在矽基材 第-氧化矽膜62 >先：別以乳化矽為材料薄膜沉積出- 、 人一第二氧化矽膜03。 接者進行步驟 ^ Λ ，以氮化矽為材料，在第 1262735 矽膜62、63上分別薄膜沉積出一第一、二氮化矽膜64、65 ，第一氧化矽膜62與第一氮化矽膜64共同形成一待後續 蝕刻處理的薄膜層，第二氧化矽膜63與第二氮化矽膜65 共同形成振膜層進而成為振膜141。 然後進行步驟33,蝕刻移除薄膜層的第一氮化矽膜64 與第一氧化矽膜62中央成方形的部分區域，使對應區域的 矽基材61裸露，留存之第一氮化矽膜64與第一氧化矽膜 61成一方框型態樣。 接著進行步驟34，自對應裸露出的矽基材61繼續向下 蝕刻移除矽基材61，直到將矽基材61成型成一框狀，且使 得對應下方的第二氧化矽膜63的對應區域裸露。 對應裸露出的第二氧化矽膜63、第二氮化矽膜65共同 形成振膜141。 然後以步驟35，以金屬在裸露出的第二氧化矽膜63與 留存之矽基材61、第一氧化矽膜62、第一氮化矽膜64鍍 覆形成截面略成U字型的電極層142。 接著進行步驟3 6，在第二氧化石夕膜65上以駐極體材料 形成駐極體層143。 再進行步驟37，以光阻自駐極體層143周緣向下形成 分隔單元145，完成振膜晶片14的硬體構造。 最後進行步驟38，充電荷於駐極體層143上使其帶電 何’完成振膜晶片14的製備。 由於上述各步驟均應用標準微機電製程技術進行，所 以說明中省略若干詳細實施細節，例如蝕刻移除特定區域 12 1262735 第氮化矽膜64與第一氧化矽膜62時，必須先進行例 如设計光罩’在第—氮化石夕膜64上光阻、曝光、顯影出預 定遮罩後，才可實際進行蝕刻，蝕刻完成後，<乃需再將遮 罩餘刻清洗掉···料，由於此等細節已為業界所週知之技 術手^又，且非本發明重點所在，諒可不予贅釋。 在製備完成上述背板13、振膜晶片14後，即可進行圖 1所示的麥克風1封裝製造。 芩閱圖4，首先進行步驟41，備製上述具有凹槽115的 …、後以步驟42，將場效電晶體12電連接並連結固定於 凹槽115中。 ' 接著進行步驟43,將背板13以穿孔131對應於凹槽 115地堆疊連結在基板11表面丨u。 再進订步驟44，將振膜晶片14以振膜141對應於背板 13的穿孔131地連結在背板13上。 最後進行步驟45,將罩殼15罩覆振膜晶片14、背板 並與基板U的側周面113相連結，即完成麥 製備。 j 在此要加以說明的是，上述背才反13是利用铭為材料形 成^虫刻的分離層52，並搭㈣為材料形成金屬層Μ而製 ::、事實上，在製備的過程中，可以採用例如鎳、銅 王等為預疋形成背板13的材料，搭配钱刻過程中並不互 相影響作用的材料，例㈣、鈦等㈣，紋二氧化石夕、 先阻、PI等高分子材料為預定形成待關的分離層52，製 13 1262735 備得出預定材質的背板13。 此外，上述振膜晶片14的薄膜層、振膜層都是以氧化 :夕膜與氮化石夕膜共同形成為例說明，然而，一般為了節省 k程、材料’振膜層可以單—的氮切膜或是氧化石夕膜， :是其他可絕緣的材料形成單一膜層，構成單一膜層所形 的振膜141;此外，為了因應感應聲能後產生不同形變、 進而造成不同電容變化的需求，上述形成平板狀的振膜製 私步驟，亦可以先行在基材的一表面預先形成敵折圖像， 再沉積形成振膜層，繼續進行後續步驟後，可以在最線製 備得出振膜成具有職皺折圖像之皺折振膜的振膜晶片， 由於此等製程細節變化’僅是應用標準微機電製程的變化 而已’在此諒可不必一 一予以詳述。 ϋ 再者，麥克風i的組裝製備過程，並非一定要依昭如 圖4所述的步㈣序加以實施，亦可以在完成㈣41盥步 驟42將場效電晶體12電連接並連結固定於凹槽115中之後 ’先將振膜晶片14堆置人罩殼B内，再依序將背板13、 埋設有場效電晶體12的基板11堆置人罩殼15，並在基板 15堆置後使基板U的側周面113與罩殼15相連結，二完 成麥克風1的製備，由於此等實施步驟順序的變化°，可: 實際需要而有所調整變化，在此不再多加舉例贅述。 由上述說明可知，本發明主要是利用電鑛製備出背板 13 改良傳統上單晶片式的電容式振膜晶片的妹構， 製備出^屬傳統單晶片式的電容式振膜晶片，亦非雙晶 片式的電谷式振厲晶片的振膜晶# 14，再搭配可以將場效 14 1262735 電晶體12埋設於内的基板Π，配合後封裝制 衣侑出麥克風1 。由於本發明麥克風1的背板13並非以長眸 … 我日守間蝕刻形成氣 至’同時，也無晶片結合的過程，因此可丄 有效提昇製巷 良率、降低生產成本，此外，就背板13的制 " J表私而言，由於 基材可以重複使用，亦有降低耗材成本的^ 音 到本發明的創作目的。 只違 准以上所述者，僅為本發明之較佳實施例而 者 :;以此：定本發明實施之範圍，即大凡依本發明申： 乾圍及a兄明書内容所作之簡單的等效變： 本發明專利涵蓋之範圍内。 ，皆仍屬 【圖式簡單說明】 圖1是 施例； 剖視示意圖，說明本發明麥克 風的一較佳實 圖2是一流程圖，說明圖j 之 過程； 麥克風的一背板的 製備 製備=是及—流程圖，說明w 1之麥克風的一振膜晶片的 圖4是一流程圖，說明製造如圖^之麥克風的過程。 15 1262735 【主要元件符號說明】 1 麥克風 21 步驟 11 基板 22 步骤 111 表面 23 步驟 112 底面 24 步驟 113 側周面 25 步驟 114 電路佈局 31 步驟 115 凹槽 32 步驟 116 第一電連接埠 33 步驟 117 第二電連接璋 34 步驟 12 場效電晶體 35 步驟 13 背板 36 步驟 131 穿孔 37 步驟 14 振膜晶片 38 步驟 141 振膜 41 步驟 142 電極層 42 步驟 143 駐極體層 43 步驟 145 分隔單元 44 步驟 15 罩殼 45 步驟 151 連結壁 51 $夕基材 152 穿透壁 52 分離層 16 氣室 53 遮覆層 17 振動空間 54 金屬層 18 封置空間 55 孑L洞 16 1262735 61 碎基材 64 第 一氮化矽膜 62 63 第一氧化矽膜 第二氧化矽膜 65 第 二氮化矽膜 17The backing plate is formed of a conductor material having a plurality of through holes for forming a predetermined image, and the plurality of through holes are coupled to the surface of the substrate corresponding to the groove, and are electrically connected correspondingly to the circuit layout. The diaphragm wafer has an electrode layer, an electret layer, a diaphragm interposed between the private layer and the electret layer, and a partition formed from the electret layer opposite to the electrode layer a unit, the electrode layer is formed of a conductive material, the electret layer is formed of an electret material and is charged, the diaphragm is formed of an insulating material, and can induce acoustic energy and corresponding deformation, and the diaphragm unit is separated by the diaphragm unit. The unit is coupled to the backing plate, such that the electret layer, the partitioning unit and the backing plate together form a vibration space, and the vibration space is connected to the air chamber by a plurality of perforations of the backing plate for deformation of the diaphragm. The electrode layer, the electret layer and the backing plate together form a capacitance that can change in response to deformation of the diaphragm. The cover is adapted to allow sound energy to pass through, and the diaphragm wafer, the back plate, the field effect transistor and the substrate are covered from the diaphragm wafer in the direction of the substrate, and then connected to the side peripheral surface of the substrate. The utility model has the advantages of providing a microphone packaged by a diaphragm chip between a single-chip capacitive diaphragm wafer and a two-chip capacitive diaphragm wafer, so as to improve overall process yield and reduce production. cost. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of a preferred embodiment of the drawings. BRIEF DESCRIPTION OF THE DRAWINGS A preferred embodiment of the microphone of the present invention is used to sense acoustic energy and convert the induced acoustic energy into an electrical signal for subsequent computing applications. The microphone 1 includes a substrate u, a field effect transistor 12 (FET), a back plate 13, a diaphragm wafer 14, and a casing 15. The substrate 11 is a printed circuit board (PCB) generally referred to in the industry, and is made of a conductive material (usually (4)) in combination with a polymer insulator (usually I ρ Ε τ or ρ ι 合成 合成 单 单 单 单 , , , , , , , , , , , , , In the figure, only a single layer of conductive material is interposed between the two insulating layers. The substrate 11 has a surface 111, a bottom surface 112, a connecting surface m -, a side surface ii 3 of the bottom surface 112, and a signal. The circuit layout between the surface 111 and the bottom surface 112 is one, the groove 115 formed by the surface 111 from the surface 111, the electric connection 埠i 16, and the one of the ii7. The second electrical connection 114 electrical layout 114 and the first electrical connection 埠 116, 117 of the bottom surface 112 are respectively 'child materials such as copper and aluminum 箄 are 铋 为, which corresponds to the field effect of the desired electrical connection 1262735 The crystal 12, the back plate 13, the diaphragm wafer 14', and the circuit board (not shown) of the electronic product of the subsequent required application are formed by electrically connecting the wires (10) to each other, and the first and second electrical connections 116, 117 and each contains a plurality of pads for subsequent processing as needed, such as solder paste, solder , various types of electrical wire (wire), electrical connection bump (ball / bump) electrical connection. A plurality of pads of the first electrical connection 埠 116 are respectively disposed on the surface lu and define a circumferential surface on which the grooves 115 are formed, and are only indicated by _ fresh 图 in Fig. The second electrical connection port 117 can be electrically connected and connected to a circuit board (not shown) of the sub-product of the subsequent desired application by, for example, solder paste, solder, or the like. The field effect transistor 12 is correspondingly fixedly connected in the recess 115 and electrically connected to the pad of the first electrical connection 布ι 6 disposed on the circumferential surface forming the recess 115 for converting the capacitance change into Electronic signal. The backing plate 13 is formed of a conductor material, such as nickel plating, having a thickness of about right and left, and has a plurality of perforations 131 forming a pre-image. The back plate 13 is connected to the stack on the surface (1) of the substrate by a plurality of perforations (3) corresponding to the recesses 115, and is electrically connected to the remaining fresh mash of the first electrical material n (4) disposed on the table U1. The backplane 13 and the recess 115 are not formed by the remaining space occupied by the field effect transistor (1) to form the chamber 16 of the microphone unit. The diaphragm wafer 14' has a diaphragm 141, an electrode layer 142 formed on the upper surface of the diaphragm i4i, an electret layer 143 formed on the lower surface of the vibrator 41, and a lower portion formed by the periphery of the diaphragm 141. Separation unit 145. The electrode layer 142 is formed by using a conductor as a sealing material, and the electret layer M3 is formed of an electret material, and is charged with a predetermined charge, and the i4i is formed by a layer of gas 1262735 and a layer of yttrium oxide to form an insulator. Layer 142 is not electrically conductive to electret layer 143. The separation unit 145 is, for example, a QTT of sulphur dioxide, sulphur, benzophenone, SINR, polyimide, or the industry. A photoresist material such as 1 P ^ SU_8 is formed downward from the bottom surface of the electret layer 143. The diaphragm 14 is formed by the diaphragm 141 corresponding to the plurality of through holes 131 of the backing plate η, and is connected to the stacking layer 145 by the partitioning material 145. The bottom surface of the diaphragm 141 and the backing plate 13 are formed by the partitioning unit 145. The vibration space 17 of the plurality of perforations m communicating with the gas chamber 16 allows the diaphragm (4) to be freely deformed in response to the induced acoustic energy. Meanwhile, the electrode layer 142, the electret layer (4) and the backing plate 13 together form a corresponding diaphragm 141. The capacitance that changes and changes. The cover 15 has an annular connecting wall (5), and a through wall 152 that is coupled to the connecting wall 151 and is permeable to sound energy. The connecting wall 151 and the penetrating wall 152 together define an enclosing space 18 having an opening. The cover μ is placed in the cover space 18 by opening the self-diaphragm film 14 toward the substrate} i direction and the diaphragm wafer μ, the moon plate 13%, and the substrate 1 are placed in the sealed space 18. And the inner peripheral surface of the connecting wall 151 is connected to the side peripheral surface (1) of the substrate ,, and the opening U is closed by the substrate U. At the same time, the cover 15 is electrically connected to the electrode layer 142 when it covers the diaphragm wafer, and is used for grounding. ^The external sound energy penetrates through the penetrating wall 152 of the casing 15, and acts on the '" two-piece diaphragm 141, which thus correspondingly deforms' to make the backing plate 13 and the diaphragm 141 The pitch is changed, that is, the capacitance formed by the electrode layer 142, the electret layer (4) and the back plate 13 is generated corresponding to 10 1262735 'k: the field effect transistor 彳 9 ^ ^ "body 12 and then the capacitance change is converted into electrons The product is used for calculation. After the motor is used, the above-mentioned microphone 1 is matched. After the detailed manufacturing of the diaphragm 14 is performed, the process of manufacturing is not related to the month 13 and FIG. 3, and as shown in FIG. The overall package 夂田J is more clearly understood. Referring to Fig. 2, the microphone i 3 is formed on a ruthenium substrate 51, for example, by forming a separation layer 52 by using the step 21 d_ as a material. The mask layer 53 of the layer 5 image. This is a thick photoresist layer called by the first layer of the image having the predetermined layer 53 corresponding to the distribution of the plurality of perforations (3), The thickness is about 6G~1GG/Zmr and then step 23 is performed. The self-separating layer 52 is uncovered. The wide sound + area, with nickel as the material, is electrically covered with a thick layer of metal layer 54. The thickness is thinner than the cover layer, about 5 〇, then step 24 is performed, and the etching removes the cover layer 53 Covering a, at the same time, the cover layer in the region of the separation layer 52 which is covered by the cover is removed to form a crotch, and at this time, the metal layer 54 takes the majority of the t corresponding to the perforation and proceeds to the step. Hole 55 of the tooth hole 131. Xixiang 25, the partial area of the etched separation layer 3 52 is opened until the separation layer 5 is completely removed. ^M. The metal layer 54 of the genus layer 54 is the same as that of the squirrel. Figure 3, "Moonmoon board 13. The upper returning diaphragm 14 is the first of the two cows. The opposite table has no step 31, in the 矽 substrate - Cerium oxide film 62 > First: do not use emulsified ruthenium as a material film to deposit - human-second yttrium oxide film 03. The receiver performs the step ^ Λ, using tantalum nitride as the material, at the 1262735 enamel film 62, 63 A first and second tantalum nitride film 64, 65 is deposited on the upper film, and the first tantalum oxide film 62 and the first tantalum nitride film 64 form a thin film to be subsequently etched. The second hafnium oxide film 63 and the second tantalum hafnium film 65 form a diaphragm layer to form a diaphragm 141. Then, in step 33, the first tantalum nitride film 64 and the first hafnium oxide layer of the thin film layer are removed by etching. A central portion of the film 62 is formed in a square shape so that the base material 61 of the corresponding region is exposed, and the remaining first tantalum nitride film 64 and the first tantalum oxide film 61 are in a square shape. Then, step 34 is performed, correspondingly exposed. The resulting tantalum substrate 61 continues to be etched back to remove the tantalum substrate 61 until the tantalum substrate 61 is formed into a frame shape and the corresponding region of the second underlying second tantalum oxide film 63 is exposed. The diaphragm 141 is formed in common with the exposed second hafnium oxide film 63 and the second tantalum nitride film 65. Then, in step 35, the exposed second germanium oxide film 63 and the remaining germanium substrate 61, the first tantalum oxide film 62, and the first tantalum nitride film 64 are plated to form a U-shaped electrode. Layer 142. Next, in step 3, an electret layer 143 is formed on the second oxide film 65 as an electret material. Further, in step 37, the partition unit 145 is formed downward from the periphery of the electret layer 143 by the photoresist to complete the hard structure of the diaphragm wafer 14. Finally, step 38 is performed to charge the electret layer 143 to electrify it. The fabrication of the diaphragm wafer 14 is completed. Since the above steps are all performed using standard MEMS process technology, some detailed implementation details are omitted in the description. For example, when etching and removing the specific region 12 1262735, the tantalum nitride film 64 and the first ruthenium oxide film 62, it is necessary to first perform, for example, After the photoresist mask' is resisted, exposed, and developed to a predetermined mask on the first-nitridium film 64, the etching can be actually performed. After the etching is completed, the mask needs to be cleaned again. It is expected that these details are already known to the industry and are not the focus of the present invention. After the preparation of the back sheet 13 and the diaphragm wafer 14 described above, the microphone 1 package manufacturing shown in Fig. 1 can be performed. Referring to Fig. 4, step 41 is first performed to prepare the above-mentioned recess 115, and then step 42 is used to electrically connect and fix the field effect transistor 12 in the recess 115. Then, in step 43, the back plate 13 is stacked and bonded to the surface 丨u of the substrate 11 with the through holes 131 corresponding to the grooves 115. In the re-substituting step 44, the diaphragm wafer 14 is coupled to the backing plate 13 with the diaphragm 141 corresponding to the through hole 131 of the backing plate 13. Finally, in step 45, the cover 15 covers the diaphragm wafer 14 and the back plate and is joined to the side peripheral surface 113 of the substrate U, i.e., the wheat preparation is completed. j It should be noted here that the above-mentioned back-and-forth 13 is formed by using the insulating layer 52 formed by the material as the material, and forming the metal layer by using (4) as a material::, in fact, in the process of preparation For example, nickel, copper king, etc. can be used as the material for forming the backing plate 13 for the pre-twisting, and the materials which do not affect each other during the engraving process, such as (4), titanium, etc. (4), the ruthenium dioxide, the first resistance, the PI, etc. The polymer material is intended to form a separation layer 52 to be closed, and 13 1262735 is prepared to obtain a backing plate 13 of a predetermined material. In addition, the thin film layer and the diaphragm layer of the diaphragm wafer 14 are described by taking an oxidation: a film and a nitride film as an example. However, in order to save the k-pass, the material 'the diaphragm layer can be mono-nitrogen. The film or the oxidized stone film: is a film formed by a single film layer formed by other insulating materials, and forms a diaphragm 141 formed by a single film layer; in addition, in order to respond to different acoustic deformations, different capacitance changes are caused, thereby causing different capacitance changes. The above-mentioned step of forming a flat-shaped diaphragm film can also be preceded by forming an image of the enemy on a surface of the substrate, and then depositing a layer of the diaphragm to form a diaphragm layer. After continuing the subsequent steps, the vibration can be prepared at the most line. Membrane wafers that have a wrinkle-reducing film with a wrinkle image, due to variations in these process details, are only used to change the standard MEMS process, and it is not necessary to elaborate on them. ϋ Furthermore, the assembly and preparation process of the microphone i is not necessarily carried out according to the step (4) described in FIG. 4, and the field effect transistor 12 may be electrically connected and fixed in the groove at the completion step (4) 41盥42. After 115, the diaphragm wafer 14 is first stacked in the human cover B, and then the back plate 13 and the substrate 11 in which the field effect transistor 12 is embedded are stacked on the human cover 15 and stacked on the substrate 15. The side peripheral surface 113 of the substrate U is coupled to the cover 15 to complete the preparation of the microphone 1. Since the order of the steps is changed, the adjustment may be made as needed, and no further details are provided herein. It can be seen from the above description that the present invention mainly uses the electric ore to prepare the back plate 13 to improve the conventional monolithic capacitive diaphragm wafer, and prepares a conventional single-chip capacitive diaphragm wafer. The diaphragm of the two-chip type electric valley type vibrating wafer #14, together with the substrate 埋 in which the field effect 14 1262735 transistor 12 is embedded, is combined with the packaged clothing to take out the microphone 1. Since the back plate 13 of the microphone 1 of the present invention is not long 眸... I am etched to form a gas to the same time, and there is no wafer bonding process, so that the efficiency of the roadway can be effectively improved, and the production cost can be reduced. In the case of the plate 13, the J table is privately used, and since the substrate can be reused, there is also a reduction in the cost of consumables to the purpose of the present invention. Only the above-mentioned ones are only preferred embodiments of the present invention: this: the scope of the implementation of the present invention, that is, the general application of the invention: the simple content of the contents of the dry and a brother's book, etc. Effect: Within the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view; a cross-sectional view showing a preferred embodiment of the microphone of the present invention is a flow chart illustrating the process of FIG. j; preparation of a back sheet of a microphone = Yes and - Flowchart, Figure 4, which illustrates a diaphragm of a microphone of w1, is a flow chart illustrating the process of fabricating the microphone of Figure 1. 15 1262735 [Description of main components] 1 Microphone 21 Step 11 Substrate 22 Step 111 Surface 23 Step 112 Bottom surface 24 Step 113 Side peripheral surface 25 Step 114 Circuit layout 31 Step 115 Groove 32 Step 116 First electrical connection 埠 33 Step 117 Two Electrical Connections 步骤34 Step 12 Field Effect Transistor 35 Step 13 Back Sheet 36 Step 131 Pierce 37 Step 14 Diaphragm Wafer 38 Step 141 Diaphragm 41 Step 142 Electrode Layer 42 Step 143 Electret Layer 43 Step 145 Separation Unit 44 Step 15 Case 45 Step 151 Connecting wall 51 $ substrate 152 Penetrating wall 52 Separating layer 16 Air chamber 53 Covering layer 17 Vibrating space 54 Metal layer 18 Sealing space 55 孑L hole 16 1262735 61 Broken substrate 64 First nitrogen Chemical film 62 63 first oxide film second oxide film 65 second tantalum film 17