TWI261962B - The two stacked LC-tank dual band voltage controlled oscillator - Google Patents

Abstract

A dual-band voltage controlled oscillator is provided. This invention essentially includes two-frequency band LC-tank VCOs stacked in series and operates with one single power supply voltage to provide two output frequency bands. A switch control circuit can be used to select either one of the two stacked LC-tank VCOs, and it provides an output to the common point of the two stacked LC-tank VCOs. The two-stacked LC oscillators can be separately optimized to obtain good oscillator characteristic as that of a single frequency band LC tank VCO. At the common point a filter can be added in parallel to improve oscillator performance, since it is used by both of the stacked oscillators, it can save chip space.

Description

1261962 IX. Description of the Invention: [Technical Field] The present invention is a dual-band LC-slot voltage controlled oscillator circuit which can be used as a signal source for a radio frequency integrated circuit. This circuit is usually Bean - U VIII /, a switch can be used to select the desired frequency (four) switchable dual-band lc_ slot voltage controlled oscillator. [Prior Art] ^ Due to the rapid development of wireless communication systems, the demand for system chips to integrate multiple frequency bands is increasing. Therefore, in the RF circuit, double (four) vibration can be provided. (4) "ϋ Circuit design has become one of the challenges that designers must overcome. X. In a simple oscillating circuit with current pulse stimuli, since the energy of some t-capacitance and inductance conversion is thermally lost in the resistor in each cycle, the circuit will correspond to an attenuation-shock characteristic. In order to obtain an infinite (non-attenuating) oscillation characteristic, in general, the LC_ oscillator uses the concept of a negative resistance to achieve this characteristic. Among them, the negative resistance is usually composed of a pair of p-type transistors or N-type transistors. The LC-slot voltage controlled oscillator (LCMank vc〇) is an oscillator that can be controlled by voltage. Generally, the oscillation frequency formula of LC_tank vc〇 can be expressed as: ...a 2^

OSC I 2 There are three types of LC-slot voltage controlled oscillators that are commonly used in dual-band circuits. The first is a capacitor-switched LC_slot voltage-controlled oscillator that changes the frequency of the cap by mainly changing the equivalent capacitance value in the cavity of the LC-slot voltage-controlled oscillator by 5 1261962. Figure 1 shows the capacitance-switched LC_cell voltage-controlled oscillation. Among them, the LC-slot voltage controlled oscillator has two sets of capacitance switching selection circuits 191 and 192. In the switching selection circuits 191 and 192, each of the gates has an N-type transistor 111, 112 and 113 connected to the selection signal 1 (Π, 1〇2 and 1〇3, and an N-type transistor in, respectively). Capacitors 121, 122, and 123 respectively connected to the drains of 113 and 113. The sources of the N-type transistors 111, 112, and 113 are connected to the ground terminals 1 and 6. Further, the switching selection circuits 191 and 192 are respectively connected to the negative resistors. Two sides of the circuit 132, and the two sources of the pair of N-type transistors 131 are connected to the ground terminal 1〇6, and the gates of the pair of N-type transistors 131 are connected to each other's drains, and are switched between the selection circuit 191 and The common connection point of the capacitors 121, 122 and 123 in 192 is respectively connected to one end of the two variable capacitors 133, and the two variable capacitors are connected to each other at the other end, and a modulation voltage 183 is connected at the connection point. The two common poles of the negative resistance circuit 138 composed of a pair of p-type transistors 137 are respectively connected to the common connection points of the capacitors 121, 122 and 123 in the switching selection circuits 191 and 192, and the pair The two sources of the transistor m are connected to the power supply terminal 1〇5, and the gates of the pair of p-type transistors are mutually = the junction of the other party. In addition, the output terminals of the switching selection circuit i9i in the electrical connection 121, 122 and 123, the variable capacitor 133 and the negative resistance circuit 132 are connected together, and the two sets of output buffer circuits 141 are respectively connected. And 142 and output signal 181 and Μ]. Please refer to Figure 1, again, the main Μ 1 /, Wang want δ and the concept is based on LC-cell pressure ^ vibration ^ (four) cover frequency formula, when we change the cavity The capacitance value of the capacitor value changes accordingly. So when we input the different signal 1101, l〇2 < idle Ul, 112 or (1), the selection is the same; the logic is different from the conduction. Get a different ': 21, 122 or 123. Chad «The round of the signal 181 ^ 82 works in the phase we need: the rate of the staff. And the round signals 181 and 182 are the same frequency, but the signal. The modulation voltage 183 is controlled to read the frequency band of the vibration modulation rate.

However, one of the disadvantages of this circuit design is that it is not possible to design the most L inductor and valley in this frequency range. For example, the inductors and capacitors in the original resonant circuit are designed to be used in both higher frequency ranges and lower frequency ranges. However, in order to obtain a lower frequency, it is necessary to increase the equivalent value of the capacitor, so that a large amount of fixed parasitic capacitance value is applied. Therefore, if this circuit is used in a higher frequency range, the parasitic capacitance value will cause the range of the high frequency band adjustable frequency to decrease, and at the same time, the overall power consumption and the quality of the resonant cavity will be increased. The second type is an inductively switched LC-slot voltage controlled oscillator, which mainly changes the oscillation frequency by changing the equivalent inductance value in the resonant cavity of the LC-slot voltage controlled oscillator. Figure 2 shows this type of inductively switched lC-slot voltage controlled oscillator. Among them, the LC-slot voltage controlled oscillator has two sets of identical selection circuits 291. The selection circuit 291+ has two N-type transistors 211 each having a gate connected to the selection signal 201. The sources of the two N-type transistors 211 are all connected to the ground terminal 206. The two logic gates 211 are also connected to an inductor 231, and the two inductors 231 are each coupled to an inductor 235. The two inductors 231 are connected to a ground terminal 2〇6 at the other end. In addition, the two inductors 235 are respectively connected to one end of the two variable capacitors 233, and the two variable electric valleys 233 are connected to each other at the other end, and the 7 1261962 electrical cover 283 is connected at the joint point. In addition, the two inductors are respectively connected to the connection variable check: 33 and then respectively connected to the two ends of the resistor circuit 238 composed of a pair of P-type transistors 237, and the pair of p-type transistors plus the other end of the connection The power terminal 205, and this pair of P-type Thunder > 0 day 丄 the other side of the bungee. The connection between the U-electrode body and the idle pole is connected to each other. The main design concept is to use the selection signal = οι to control the selection circuit 291, thereby changing the equivalent electric value of the resonant cavity. When the logic gate 211 in the #select circuit 291 is turned on, the inductor 231 is equivalent to being short-circuited. Therefore, the equivalent inductance value becomes smaller as the inductance of the inductor 235', and a higher oscillation frequency can be obtained. Conversely, when the circuit is broken, the 'inductance 231 * 235 , ^ , 235 236 is so shame that the equivalent inductance value (about the sum of the electric = 231 and the inductance 235) rises, and a lower vibration frequency is obtained.

The disadvantage of this circuit is that in the resonant cavity, the addition of two selection circuits 291 and the parasitic resistance and capacitance generated by the selection circuit 291 will seriously affect the quality of the circuit cavity. Especially when the switch is turned on, the channel resistance of M0S « will cause the quality to drop, and the additional resistors and valleys will also increase the power loss. The third type is a parallel switching LC-slot relocation vibrator, which mainly connects a plurality of Lc_cell voltage-controlled vibrators operating in different frequency bands in parallel, and changes the vibrating frequency _ by cutting the switching circuit. $, and m a y Beierdi 3 is inconvenient to be such a parallel switching LC alarm vibrator. Among them, the Lc•cell voltage controlled oscillator has two sets of slot voltage controlled oscillators 4 391 and 392 which can generate different frequencies. In the slot voltage controlled oscillator circuit 391, there is a selection circuit 34A controlled by the selected signal 3〇i. It causes the selection circuit 34 to connect the two parallel inductors 335. In addition, the two parallel inductors are respectively connected to one end of the two variable capacitors 333, and the two variable capacitors 333 are connected to each other at the other end, and a modulation voltage 383 is connected at the connection point. In addition, the two inductors 335 are respectively connected to the variable capacitor 333, and respectively connected to the two drains of the negative resistance circuit 332 composed of a pair of N-type transistors 331, and

The two sources of the pair of N-type Ba bodies 33 1 are connected to the ground terminals 3〇6, and the gates of the pair of N-type transistors 33 1 are connected to each other's drains. In addition, at the output end of the inductor 335, the variable capacitor 333 and the negative resistor circuit 332, the output signal 381 is coupled to an output integrated circuit 35A. Similarly, the slot voltage controlled oscillator circuit 392 is composed of the same structure and controlled by the selection signal 3〇2, and the output signal 382 is connected to the output integration circuit 350 at the output end. Referring again to FIG. 3, the main design concept is The selection circuit 301 is controlled by the selection signal 301 to switch to the lc·slot voltage controlled oscillator circuit 39丨 of the band to be operated, and the oscillator is operated. At this point, the other oscillator will not oscillate, and the multi-band oscillator can be implemented in this way. The disadvantage of this circuit is that each set of oscillators requires an additional set of selection circuits 340. At the same time, when reducing the phase noise generated by the circuit, each group of oscillators also needs to be accompanied by a set of filter circuits (no picture here) Show), so add extra wafer area and cost. SUMMARY OF THE INVENTION It is an object of the present invention to provide an LC-slot voltage controlled oscillator for generating a signal source for a radio frequency integrated circuit.

Another object of the present invention is to provide an LC 1261962 tank voltage controlled oscillator with a switchable operating frequency. Still another object of the present invention is to provide an LC-slot voltage controlled oscillator that is small and does not sacrifice signal quality. In accordance with the above objects, the Lc_slot voltage controlled vibrator of the present invention mainly comprises (a) two sets of lc_slot voltage controlled oscillators capable of generating different operating frequency ranges. (b) A selection circuit consisting of a circuit of an N-type transistor and a p-type transistor (C) A capacitor, an inductive filter circuit 'and the above-mentioned selection circuit are connected at the same point' for unnecessary components of the tears News. The two sets of LC-slot voltage controlled oscillators can be implemented using different types of oscillators, respectively. Therefore, the characteristics of the two sets of oscillator circuits can be optimized without sacrificing signal quality. In this way, the desired oscillation frequency can be selected by simply selecting the circuit. [Embodiment] FIG. 4 is a functional block diagram showing a first LC-slot voltage controlled oscillator circuit 410 and a second LC-slot voltage control oscillator circuit 420' according to a preferred embodiment of the present invention. The two sets of LC-slot voltage controlled oscillator circuits are overlapped with each other at the junction point 400. The first LC-slot voltage controlled oscillator circuit 410 is coupled to the power supply terminal 405' and the second LC-slot voltage controlled oscillator circuit 420 is coupled to the ground terminal 406. In addition, a selection circuit 430 is coupled to the junction 400. The selection circuit 430 can input a selection signal 435 to generate an inversion signal 439, and is coupled to the first LC-slot voltage controlled oscillator circuit 410 to the power supply 1261962. Two LC-slot voltage controlled oscillator circuit 420 is connected to the ground

410 and 420 405, and with the second 406. And the -li 41〇 " diagram, in which two sets of LC-slot voltage controlled oscillator circuits and 420, are the source of the vibration signal of the main dual-frequency oscillator circuit. and

The selection signal 435 is used to switch the input frequency of the control oscillator circuit. For example, when the selection signal 435 is high, the oscillator circuit 410 operates, and the oscillator circuit 42 is turned off; similarly, when the selection signal #U 435 is low At the potential, the oscillator circuit 420 is made and the oscillator circuit γο is turned off. In this way, the requirements of the dual band oscillator can be achieved. And a buffering function of the integrated circuit 45〇, disposed in the output 柒 of the two LC_ oscillators, the first signal 419' of the first LC-slot voltage controlled oscillator circuit 41 and the second Lc The second signal of the slot voltage controlled oscillator circuit 42 is at the same-output point. However, depending on the circuit design requirements, the circuit can also be designed as two sets of LC-slot voltage controlled oscillator circuits 41〇 and 42〇 separately output (not shown here). In addition, the capacitor filter circuit 44 is also disposed on the junction 400 between the two-stage LC-slot voltage controlled oscillator circuits 410 and 420, and is connected to the selection circuit 430 at the same point for filtering unnecessary Noise. FIG. 5 is a detailed circuit diagram of the foregoing functional block diagram. The structure and function of each circuit will be described below. The LC-slot voltage controlled oscillator 410 has parallel inductors 413 and 414 connected to the power supply terminal 405. In addition, the two parallel inductors 413 and 414 are connected to one end of the two variable capacitors 415 and 416 respectively, and the two variable capacitors 415 and 416 are connected to each other at the other end, and are connected at the joint point. A modulation voltage of 410T. In addition, the two inductors 413 and 414 respectively connect the two drains of the negative resistance circuit 418 composed of a pair of N-type transistors 411 and 412 to the variable capacitors 415 and 416, respectively, and the N-type transistor 411. The gate is connected to the drain of the N-type transistor 412, and the gate of the N-type transistor 412 is connected to the drain of the N-type transistor 411. And this pair of N-type transistors 411 and

The two sources of 412 are coupled to a tail inductor 417. In addition, the first signal 419 is connected to the output terminal of the inductor 414, the variable electric valley 416 and the negative resistance circuit 418. Similarly, the output terminal connected by the inductor 413, the variable capacitor 415 and the negative resistance circuit 418 is coupled to the other first signal 419A. The first signal 419 and the first signal 419A are interlaced signals and are mutually inverted signals, wherein the output signal 419A can be coupled to the wheel integration circuit 450 (not shown here). The negative resistance circuit 418 is mainly used to cancel the effect caused by the parasitic resistances of the inductors 413 and 414 and the variable capacitors 415 and 416 in the resonant cavity, so that the LC-slot voltage controlled oscillator 410 can continuously vibrate. The LC tank voltage controlled oscillator 420 has parallel inductors 423 and 424 coupled to ground terminals 4〇6. In addition, the two parallel inductors 423 and 424 respectively connect one ends of the two variable capacitors 425 and 426, and the two variable capacitors 425 and 426 are connected to each other at the other end, and a second modulation is connected at the connection point. Voltage 420T. In addition, the two inductors 423 and 424 are respectively connected to the variable capacitors 425 and 426, and respectively connected to the two drains of the negative resistance circuit 428 composed of a pair of p-type transistors 421 and 422, and the p-type transistor 421 The gate is connected to the drain of the P-type transistor 422, and the closed 12 1261962 of the p-type transistor 422 is connected to the pole of the N-type transistor 421. The two ends of the p-type transistors 421 and 422 are connected to a tail end inductance 427. In addition, a second signal 429 is outputted from the wheel terminal of the inductor 々μ, the variable IGBT 426 and the negative resistance circuit 428. Similarly, the rounding end of the inductor 423, the variable capacitor 425 and the negative resistor circuit 428 are connected to each other, and the other second signal 429A is connected. The second signal 429 and the second signal 429A are interleaved signals and are mutually inverted signals, wherein the output signal 429A can be connected to the output integration circuit 450 (not shown here).

In addition, the LC-slot voltage controlled oscillator 420 is coupled to the LC-slot voltage controlled oscillator 41 by a junction between the tail inductor 427 and the tail inductor 417. The negative resistance circuit 428 is mainly used to cancel the effect of the parasitic resistance of the inductors 423 and 424 and the variable capacitors 425 and 426 in the resonant cavity, so that the LC-slot voltage controlled oscillator 420 can be continuously vibrated. The tail inductors 417 and 427 placed between the tail of the LC-slot voltage controlled oscillators 410 and 420 and the junction 400 can increase the load impedance of the tail of the oscillator to reduce the average loss of the resonant cavity, thereby reducing phase miscellaneous To improve the signal quality of the resonant cavity. The band switching circuit 430 is an inverter circuit composed of an n-type transistor 431 and a p-type electrode body 432. The source of the n-type transistor 431 is coupled to the ground terminal 406, and the source of the P-type transistor 432 is coupled to the power supply terminal 405. In addition, the N-type transistor 43 1 and the two gates of the p-type transistor 432 are commonly connected to the selection machine number 435, and the two drains commonly connect the inversion selection signal 43 9 to the bonding point 400. When the selection signal 435 of the switch circuit 430 is at a high level, the N-type transistor 431 in the switch circuit 430 is turned on, and the inverted select signal 439 is turned on. At this time, the Lc-slot voltage controlled oscillator 41 〇 forms a versatile oscillator circuit to provide an oscillating frequency output source; on the other hand, the voltage difference across the LC-slot voltage controlled snubber 42 is low. Therefore, the LC_slot voltage controlled oscillator 420 will not vibrate.

Similarly, when the selection signal 435 of the switching circuit 430 is low, the p-type transistor 432 in the switching circuit 430 is turned on, and the inverted selection 汛唬 439 is high. At this time, the LC-slot voltage controlled oscillator 42 〇 forms a τ oscillator oscillator circuit to provide an oscillating frequency output source; on the other hand, the voltage difference across the LC-slot voltage controlled oscillator 41 很 is low, so The tank voltage controlled oscillator 410 will not vibrate. Therefore, by switching the selection signal 435, the desired oscillation frequency can be selected, and the two LC-slot voltage controlled oscillators 41A and 42〇 can be operated in their respective optimum states without sacrificing power or Signal quality. The filter circuit 440 is formed by a capacitor 441 and is coupled to the junction 400. The filter circuit 440 can filter the low frequency and high frequency noise generated by the N-type transistor 431 and the P-type transistor 432 in the switch circuit 43A to prevent such noise from being up-converted to the LC-slot voltage-controlled oscillation. The device 41〇 and 42〇 affect the signal quality of the vibrator. On the other hand, the filter circuit 44A can also reduce the mutual influence of noise between the two LC-slot dust-controlled oscillations. The output integration circuit 450 is composed of a common source circuit. The first signal 419 is connected to the pole between the first transistors 453, and the second signal 429 is connected to the gate of the second transistor 451. In addition, the second transistor 45ι and the state 14 1261962 and the pole commonly connected to the third transistor 455, the ::::: knot finally turns out the signal • and the output integration =,, the rain out 汛 459 provides an amplification And buffering function. Zhenying knows that the third type of parallel switching LC tank control is shown in Figure 3). The difference is that the present invention is a series circuit, and only one set of selection circuit ^43 can be used to achieve double The required power of the frequency band a. This has the advantage of saving area and the need for a single-control bit. Figure 6 is a detailed circuit diagram of another preferred embodiment of the present invention, the basic structure of which is substantially the same as that of the embodiment shown in Figure 5. The difference is that the two LC-slots in the $, the voltage-controlled oscillations are reversed and the tail inductances 417 and 427 are removed. That is, the LC-slot voltage controlled oscillator 62 is the same as the LC-slot voltage controlled oscillator 420 with the tail inductor 427 removed, while the LC-slot voltage controlled oscillator 610 and the tailed inductor 417iL are removed (> The control oscillator 41 is the same. Fig. 7 is a detailed circuit diagram of another preferred embodiment of the present invention, the basic structure of which is substantially the same as that of the embodiment shown in Fig. 5. The difference is that the selection circuit 430 in Fig. 1 is omitted. And the output integration circuit 75 generates two final output signals 758 and 759. If the selection circuit 43 is omitted, the upper and lower sets of LC-slot voltage controlled oscillator circuits 410 and 420 simultaneously generate the first signal 419 and the first Signal 429 provides an application that requires two sets of oscillating signal source circuits at the same time. The advantage is that the concept of current re-use is utilized, allowing both sets of oscillators to operate simultaneously without increasing the extra current path, effectively reducing Current and power loss. The disadvantage is that the voltage difference between the terminals of the transistor is limited due to the stacking of the upper and lower layers. Therefore, the signal quality of the fixed operating voltage VDD is slightly worse than that of the circuit of Figure 5. 1261962 Figure 8 is A detailed circuit diagram of another preferred embodiment of the present invention is substantially similar to the embodiment shown in Figure 5. The difference is that two slot voltage controlled vibrations, 81G and 82G, use two "resistive circuits. The tank voltage controlled oscillator 81A has a negative resistance circuit 817 composed of a pair of p-type transistors (1) and gw. The two sources of the p-type transistors 813 and 814 are connected to the power supply terminal 805, and the drain is connected. The two ends of the inductor 818, and the gate of the P-type transistor (1) is connected to the drain of the p-type transistor 814, and the gate of the P-type transistor 814 is connected to the gate of the P-type transistor 813. The two types of variable capacitors 815 and 816 are respectively connected to the junction of the two types of transistors 813 and the two poles and the inductor 818. The two variable capacitors 815 are connected to each other at the other end. The first-modulation voltage 81GT is connected to the connection point, and the inductor 818 is connected to the variable capacitors 815 and 816, respectively, and is respectively connected to the negative resistance circuit 818 composed of a pair of N-type transistors (1) and (1). a pole, and the N-type transistor is connected to the pole of the N-type transistor 812, and the idler of the N-type transistor 812 , 'σ N-type transistor 8 " the bungee. And the two sources of n-type transistor state and • 812 are connected to the junction point 400. Similarly, the LC_cell voltage-controlled vibrator 820 has The LC-slot voltage controlled oscillator has a similar circuit configuration. 凊 Referring again to Figure 8, the present embodiment has two sets of negative resistance circuits 817 and 818 to provide greater negative resistance effects, providing better signal quality. It can be done with only one inductor, thus reducing the total area required for the wafer to achieve the cost reduction benefits. The two Lc•cell voltage controlled oscillators 720 are the same circuit architecture. The Figure 9 is a detailed circuit diagram of another preferred embodiment of the present invention, the basic structure of which is substantially the same as that of the embodiment shown in Figure 5. The difference lies in the design of the chopper 16 1261962 circuit 940 and the output integration circuit 950, and removes the tail inductances 417 and 427 of FIG. In the filter circuit 940, the first filter capacitor 941 is connected to the capacitor 441 in the original filter circuit 44, and the first filter capacitor 941 is connected in parallel with a transistor 943 and an inductor 942 at one end of the ground. The transistor 943 is coupled to a second filter capacitor 944, and the inductor 942 is coupled to a third filter capacitor 945. In addition, the gate of transistor 943 is controlled by a filter circuit control signal 946. In the round-out integration circuit 950, the first transistor 953 connected to the first signal 419 is equal to the first transistor 453 in the original output integration circuit 450, and the third transistor 951 is connected to the second signal 429. The second transistor 451 of the parity original output integration circuit 45. Further, the drain of the third transistor 951 is coupled to the source of the fourth transistor 952, and the drain of the first transistor 953 is coupled to the source of the second transistor Μ*. The fourth transistor 952 is the same as the second transistor 954.

Extremely controlled by a first integrated control signal 957.

The output signal can be better isolated from the 17 1261962 round-in signal to improve the output signal quality. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and any skilled person skilled in the art can make various changes and modifications without departing from the scope of the invention. The scope of the ginger protection of the present invention is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious, the detailed description of the drawings is as follows. Figure 1 is a conventional capacitive switching LO tank pressure. Control oscillator circuit diagram. Figure 2 is a circuit diagram of a conventional inductive switching LC_slot voltage controlled oscillator. Figure 3 is a circuit diagram of a conventional parallel switching Lc_slot voltage controlled oscillator. Figure 4 is a functional block diagram of a preferred embodiment of the present invention. Figure 5 is a detailed circuit diagram of a preferred embodiment of the present invention. Figure 6 is a detailed circuit diagram of a preferred embodiment of the present invention. Figure 7 is a detailed circuit diagram of another preferred embodiment of the present invention. ❿ Figure 8 is a detailed circuit diagram of a preferred embodiment of the present invention. Figure 9 is a detailed circuit diagram of a preferred embodiment of the present invention. [Description of main component symbols] 101, 102, 103, 201, 301, 302 · Select signals 1〇5, 205, 405, 805: power terminals 106, 206, 306, 406, 806: ground terminals 111, 112, 113 211: Logic gates 121, 122, 123, 441: Capacitors 18 1261962 131, 331, 431, 411, 412, 811, 812: N-type transistors 132, 138, 238, 332, 418 '428, 817, 818: Negative resistance circuits 133, 233, 333, 415, 416, 425, 426, 815, 816: variable capacitors 135, 231, 235, 335, 413, 414, 423, 424, 818, 942 · inductors 137, 237, 432, 421, 422, 813, 814 · P-type transistors 141, 142: output buffer circuits 181, 182 · Output signals 183, 283, 383: modulation voltage 191, 192 · switching selection circuit switching selection circuit 291 340, 430: selection circuit 381, 382: output signal 350: output integration circuit 391, 392: LC-slot voltage controlled oscillator circuit 400: overlap point 410, 620, 810: first broadcast two θ music LC- Slot voltage controlled oscillator circuit 410Τ, 810Τ: first modulation voltage 417, 427: tail inductance 419, 419Α: first signal 420, 610, 820: first τ Broadcasting two upper θ music LC-slot voltage controlled oscillator circuit 420T: second modulation voltage 429, 429A · second signal 435: selection signal 439: inversion selection signal 19 1261962 440, 940: filter circuit 450, 750, 950: output integration circuit 451: second transistor 453: first transistor 455: third transistor 459, 75 8, 759, 959: final output signal 941: first filter capacitor 943: transistor 944: Second filter capacitor 945: third filter capacitor 946: filter circuit control signal 951: sixth transistor 952: seventh transistor 953 · fourth transistor 954: fifth transistor 955: eighth transistor 956: second integrated control signal 957 · · first integrated control signal 20

Claims (1)

1261962 X. Patent application scope·· As a radio frequency integrated circuit 1 · A signal source for a radio frequency signal source selection device, comprising: · for rotating a first signal; 'and switching the first oscillator, wherein The second signal is coupled to the first signal or a first oscillator according to a selection signal, coupled to a power terminal, and a second oscillator coupled to a ground terminal at a stack of contacts For outputting a second signal, the first signal is a different frequency band; A selection circuit is coupled to the overlap point to switch the second oscillator and the second oscillator to the second signal. Jin, 2 pots such as the middle! ^Special range / one of the RF signal source selection devices described in 1 item, the middle of the brother, a vibrating device, comprising: at least two inductors respectively have a first end and a second end The first end of the inductors is coupled to the power terminal; at least two serially connected variable capacitors are respectively connected to the t terminal: the variable capacitors have a common contact to lightly connect: = variable voltage, thereby fine-tuning the first signal; at least two N-type transistors, wherein the two _ transistors are connected to the pole and the fourth pole, and the two transistor lines are lightly connected to the The second end of the inductor; and the tail end inductor 'where the end of the tail inductor is coupled to the source of the n-type transistor, and the other end is coupled to the overlap point. 21 1261962 3. According to the scope of the patent application, wherein the second vibrator comprises: "the RF signal source is selected to have at least two inductors respectively having - the first end of the inductance of the first end coupling The grounding terminal; -U the end-to-end capacitance is respectively connected to the first varying voltage of the inductors, thereby fine-tuning the second signal; the second brother is with at least two P-type transistors, wherein ^^^L r The gate of the transistor is coupled to the drain, and the drain of the transistor is coupled to the second end of the inductor; and the inductor of the tail end is The end of the tail inductor is the source of the 曰曰-type electric , body, and the other end is coupled to the splicing point. 4. The RF signal source selection device as described in the patent application 帛i, The first oscillator includes: an end, wherein the at least one inductor has a first end coupled to the first end of the first inductor; the at least two serially coupled variable capacitors are respectively coupled Connected to the second ends of the inductors, the two variable capacitors have a common contact a first modulation voltage is coupled to fine-tune the first signal; and at least two P-type transistors, wherein the gates and the drains of the two p-type transistors are coupled to each other, and the two P-types The second end of the transistor is coupled to the second end of the inductors. The RF signal source as described in claim 1 is selected from the group 22 1261962, wherein the second oscillator comprises: a second end, Wherein the at least two inductors are represented by the 嗲箆/, one of the younger ones is connected to the Haidi-side to the overlapping point; the at least two strings are far less than the two ends, and the two variable electrical:: capacitor The first variable voltages respectively connected to the inductors are used to fine tune "and a common contact to lightly connect - the second adjustment signal"; and at least two N35? transistors, which are lightly and mutually Connected to the gate of the _ 4 i transistor (and the two N-type θ and XI, the second end of the four inductors. The 汲 of the 曰曰 body is coupled to the set, wherein the first 振 振The RF signal source is selected as the second type of the wide-type power - Face to face together; 丄- a. The pole between the type of transistor and the body = sense 'where the two ends of the inductor are respectively pure to the two ends of the two p-type electro-crystalline inductors, the first modulation voltage, at least two serially connected variable capacitors respectively Coupling the one variable capacitor and having a common contact coupled to fine-tune the first signal; and at least two N-type transistors 'the bottom of the two (four) transistors are connected to the P-type The transistor has a pole, and wherein the sources of the two N-type transistors are coupled to the junction, and wherein the gates of the two N-type transistors are coupled to the drain. 23 1261962. The radio frequency signal source selection device as described in claim 1, wherein the second oscillator comprises: at least two Ν-type transistors, wherein the sources of the two Ν-type transistors Transmitting the grounding end, wherein the gates and the drains of the two Ν-type transistors are coupled to each other; an inductor' wherein the two ends of the inductor are respectively coupled to the drains of the two Ν-type transistors; The two series of variable capacitors are respectively coupled to the two ends of the inductor, and the one variable capacitor has a common contact coupled to a second modulation voltage to fine tune the second signal; and at least two turns a type of transistor, wherein the drain faces of the two p-type transistors are connected to the gates of the germanium-type transistors, and wherein the source faces of the two p-type transistors are connected to the overlap point, and wherein the two The gate and the drain of the p-type transistor are mutually consumed. 8. The RF signal source selection device as described in the Shen Qing patent scope, wherein the selection circuit comprises an inverter circuit. 9. The RF signal source selection device as described in item i of the patent application scope includes a more than -m circuit purely for the transition point to transition the noise generated by the selection circuit. Ίο. The RF signal source as described in claim 9 of the patent application is selected to include the wave circuit, comprising: a capacitor, wherein one of the capacitors is connected to the ground, and the other end is 24 1261962. . The RF signal source selection device as described in claim 9 wherein the filter circuit includes: a first ferrite capacitor, wherein one end of the first filter capacitor is coupled to the ground terminal, The other end is coupled to the stacking point; a second filter capacitor, wherein one end of the second filter capacitor is coupled to the ground end, and the other end is coupled to the drain of the transistor, and the source of the transistor is connected The 4 contact, and the electro-crystal gate is a pure-brid circuit control signal; and the second filter is a capacitor, wherein one end of the third filter capacitor is coupled to the ground terminal 'other-end (four)-inductor, and The other end of the inductor is the overlap point. 12• The radio frequency set as described in the patent application scope β further includes an output whole person t, a detailed display circuit, and the output integrated circuit includes a first transistor, a complex φ visitor _ n · - a first electric switch, the electric crystal is controlled by the first signal; - a third electric power: connected to a common joint point; and the same joint point, and the wheel is connected to the gate of the mountain body A total of the final output signal is sent. 13. If the scope of the patent application is set, the invention further includes a round-trip, RF signal source selection device-the first circuit, and the output integration circuit includes the next day body, wherein the first power device each The 曰 体 is controlled by the first signal; 25 1261962 a second transistor, wherein the second transistor is controlled by a first whole person protection signal, and is connected to the first transistor, wherein the first integration: : the signal is in a frequency multiplication relationship with the selection signal; - a third transistor 'where the third transistor is controlled by the second signal; - a fourth transistor ' wherein the fourth transistor is controlled by the second integrated signal And the third transistor is purely connected to the second transistor and has a common connection point, wherein the second integrated control signal is broken into a frequency multiplication relationship with the selected signal; and a fifth transistor, wherein the The gate of the fifth transistor is about the common connection point and outputs the final output signal. The RF signal source described in item 1 of the patent scope is selected and placed, wherein the first signal is generated by the drain of the transistor. ^ The RF signal source described in the first paragraph of the patent is selected, and the second signal is generated by the transistor of the transistor. The signal source used as the RF source circuit selection device includes: a - oscillator, coupled to a power terminal for outputting a first signal; and two first oscillators, The grounding end is coupled to the grounding end and coupled to the first oscillator: -=, for outputting a second signal, wherein the second signal is in a different frequency band from the heart tiger, and the potential of the overlapping point can make the first A vibrator 26 1261962 oscillates simultaneously with the second oscillator. 17 · The RF signal source selection device as claimed in item 16 of the patent application, wherein the potential of the junction is between the potential of the power supply terminal and the potential of the ground terminal. 18. The RF signal source selection device according to the πth item of the patent application scope, wherein the first oscillator comprises: wherein the at least two inductors have a first end and a second end respectively The first end of the inductor is coupled to the power terminal; at least two serially connected variable capacitors are respectively connected to the second ends of the inductors, and the two variable capacitors have a common contact Adjusting the voltage to fine tune the first signal; at least two N-type transistors, the middle-to-the-thin, T, the gate of the N-type transistor, and/and the poles are mutually connected together, and the two ^ ^ ^ The anode of the iN type transistor is coupled to the second end of the inductor; and the 曰-tail end inductor 'where the end of the end inductor is lightly connected to the source of the type 0 electric body, and The overlapping point is coupled to the other end. 19. The RF signal source selection device as described in the patent application section „ ^ ^ ^ 固禾, wherein the second oscillator includes at least two inductors respectively having a first .φ, a sister and a a second end, wherein the first end of the two inductors (the fourth) of the ground end; the end of the two variable capacitors and a common contact to lightly connect: the second to the second series of variable capacitors respectively The 5th - Amrrr- λ^α of the inductors is adjusted to a voltage of 27 1261962 to fine tune the second signal; at least one p-type transistor is connected to the poles and is connected to each other. a gate of the body. The drain of the one p-type transistor is coupled to the second end of the inductors; and the turn is a tail end inductor 'where the end of the inductor is the source of the end crystal' and The one end is lightly connected to the overlapping point. 20 = The RF signal source device described in claim 16 of the patent, wherein the first oscillator comprises: the second inductor has a first end and a second end respectively The first end of the two inductors is coupled to the overlap point; at least two of the series are connected The capacitors are respectively connected to the first ends of the inductors: the variable capacitors have a common contact to lightly connect a first adjustable voltage, thereby fine-tuning the first signal; and at least two P-types a crystal, wherein the gates of the two ?-type transistors are connected to each other, and the two p-type transistor lines are connected to the second ends of the inductors. 21. The RF signal source described in the item 16 is selected to be a 3 苐 振 振 , , , , , , , , , 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少The plurality of series-connected variable capacitors are respectively coupled to the second ends of the inductors, and the two variable capacitors have a common contact to couple the second second modulation voltage. Fine-tuning the second signal; and 28 1261962 2·such as claiming the patent range, ^ device,: the first-invigoration device, including the obtained RF signal source selection_接=::P-type transistor' The source of the two P-type transistors is connected to the power supply terminal, and the two phases are coupled together; The two sides of the inductor are connected to the two p-type transistors, respectively. The variable capacitors are respectively switched to the two ends of the inductor. The micro, the first, the ~, and the same contact are coupled to the -the first modulation voltage, the fine-tuning the first signal; and the at least two N-type transistors, wherein the coupling is the one The fault of the crystal is extremely troublesome. (4) The source of some P-type transistors is connected to the junction, and wherein: the poles of the two N-type transistors are __. The middle 4-n-type transistor Gate and not 23. If the application of the scope of the 16th device, wherein the second vibrating, ^ in the slave RF signal source select at least two N-type transistors, complex + one lightly connected to the ground, and the basin "two The source of the two Μ transistors is coupled together; , the gate of the Ν-type transistor is mutually inductive with the drain, wherein the two ends of the inductor are respectively _ the two 电-type ICP 29 1261962 body bungee; at least two series connected variable capacitors are respectively coupled to the two ends of the inductor, the = variable capacitors and have a common contact to couple one Two modulation voltages, thereby trimming the second signal; and at; _ P-type transistor, wherein the two? The non-polarity of the type of transistor is coupled to the drains of the N-type transistors, and the center of the P-type transistor is coupled to the junction point, and the 苴 佼 石 石 石 ,,闸The gate and the drain of the P-type transistor are coupled to each other. A 24. The RF signal source as described in item 16 of the patent (4) is selected to be buried and the filter circuit is lightly connected to the junction. For filtering the noise generated by the selection circuit. 25. The RF signal source selection table according to the 24th item of the patent application scope, wherein the filter circuit includes: a capacitor, wherein one of the capacitors is coupled to the ground terminal, and the other end is coupled to the ® contact. 26. If the RF signal source is far away from the 24th of the patent application scope, The Boyi circuit includes a first filter capacitor, wherein the current filter, one of the filter capacitors is coupled to the ground terminal, and the other end is switched to the junction; a second filter Capacitor, wherein one of the first filter capacitors of #$__H is coupled to the ground terminal, and One end is coupled to a thunder, and “the drain of the electric body is connected, and the source of the transistor is connected to the contact point, and the gate of the electric circuit is coupled to a filter circuit. And a second filter capacitor, wherein one end of the third filter is coupled to the ground, the other end is coupled to an inductor, and the other end of the inductor is coupled to the overlap. 27. The RF signal source selection device as described in claim 16 further includes an output integration circuit, and the output integration circuit comprises: - a first electric day and a solar body, wherein the first transistor is a second transistor, wherein the second transistor is controlled by the second signal, and coupled to the first transistor to a common junction point and a third transistor 'the The gate of the three transistors is coupled to the common junction point 'and outputs a final output signal. 28. The RF signal source selection A as set forth in claim 16 of the patent scope is set to a more include-output integration circuit, and the output integration circuit comprises: - a first transistor, wherein the first transistor is - signal control; a second transistor, wherein the first-throttle electrode is controlled by a --integrated control «wired to the first transistor, wherein the first integrated control system and the selection signal are Frequency doubling relationship; α :: three transistors, wherein the third transistor is controlled by the second signal; ": Γ transistor, wherein the fourth transistor is controlled by - second integration:: two, = three The crystal 'and the surface of the second transistor is connected to the same junction point, wherein the second integrated control number is a frequency doubling relationship: a singularity-fifth transistor, wherein the gate of the fifth transistor is lightly connected to the Common 31 1261962 is connected to the point and outputs the final output signal. 29. The RF signal source selection device as described in claim 16 wherein the first signal is generated by the drain of the transistor. RF signal source as described in item 16. Selecting means' wherein the second signal line of the transistors > and generating electrode. 32