JP2002198732A - High frequency oscillation circuit and wireless communication unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve problems in a conventional common collector high frequency oscillation circuit that it deteriorates a C/N characteristic of the oscillation circuit and increases the mount area due to a parasitic capacitance between a lower face of a capacitor and an IC substrate because an MIM(Metal- Insulator-Metal) capacitor is adopted for feedback capacitors between emitters and bases of an oscillation transistor(TR). SOLUTION: Base electrodes 32, 34, 36, 38 and emitter electrodes 33, 35, 37 of the oscillation TR are placed interdigitally to form the feedback capacitors with capacitors formed between the bases and emitter electrodes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency oscillation circuit such as a voltage controlled oscillator in a wireless communication device such as a portable telephone and a satellite communication.

[0002]

2. Description of the Related Art A conventional technique will be described with reference to the drawings.

FIG. 8A is an equivalent circuit diagram of a conventional high-frequency oscillation circuit, and FIG. 8B is a configuration diagram of an oscillation transistor and a base-emitter capacitor section.

In FIG. 8A, 101 is a collector-ground clap oscillation circuit, 1 is a base-emitter capacitor, 2 is an oscillation transistor, 3 is an oscillation output coupling capacitor, 4 is an emitter resistor, and 5 is an emitter-ground capacitor. , 6 are oscillation output terminals, 7 and 8 are base bias resistors, 9 and 12 are resonance circuit coupling capacitors, 10 is a resonance inductor, 11 is a resonance varicap, 13 is a control voltage application inductor, and 14 is a control voltage application. A terminal 15 is a bias application terminal.

In FIG. 8B, reference numeral 102 denotes an oscillation transistor and a base-emitter coupling capacitor unit.
201 and 202 are wiring layer interlayer films, 203 is a transistor electrode layer interlayer film, 204 is a silicon substrate, 205 and 209
Is a capacitor electrode, 206 is a capacitor internal dielectric layer,
207, 210, 211 are connection wirings, 208, 215,
216 and 217 are wiring interlayer contacts, 212 collector terminals, 213 emitter terminals, 214 base terminals, 218
Collector electrode, 219 emitter electrode, 220 base electrode, 221 is a collector region, 222 is an emitter region,
23 is a base area.

In a conventional high frequency oscillation circuit, a transistor 2
The emitter and base electrodes are drawn out from the emitter region 222 and the base region 223 of the silicon substrate 204 to the emitter electrode 219 and the base electrode 220, respectively, and connected to the terminals 213 and 214 via the contacts 216 and 217.

Then, a base-emitter capacitor 1
Are a capacitor electrode 209 connected via an emitter connection wire 210, a connection wire 211 from a base, an inter-wire contact 208, a capacitor electrode 205 connected via a connection wire 207, and a capacitor internal dielectric layer 2
06 MIM (metal insulator)
(Metal) capacitors.

[0008]

However, the above-described configuration has a problem that the capacitance per unit area of the capacitor is small and the size of the capacitor is large.

Further, since the area of the capacitor is large, there is a problem that the C / N and the like are deteriorated due to the parasitic capacitance between the lower surface of the capacitor electrode and the silicon substrate or between the connection wiring and the silicon substrate.

[0010] Such a high-frequency oscillation circuit is generally formed in an IC, and is used by housing the IC in a package.
Due to the parasitic capacitance of the bonding wire that connects the input / output terminal to the outside and the inside of the IC, C / N deteriorates,
There is a problem that the gain is reduced.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to obtain a high-frequency oscillation circuit having a small area without deterioration in characteristics such as C / N.

Another object of the present invention is to provide a high-frequency transmission circuit or the like that does not deteriorate the gain and C / N of the circuit when mounted on a package.

[0013]

In order to achieve the above object, a first aspect of the present invention (corresponding to claim 1) comprises a plurality of emitter-equivalent electrodes, a plurality of base-equivalent electrodes provided in a laminate. An oscillation element having a transistor structure having a collector equivalent electrode, wherein the plurality of base equivalent electrodes are:
The parasitic capacitance formed between the emitter-equivalent electrode and the base-equivalent electrode is disposed between the emitter-equivalent electrode and the base-equivalent electrode. This is a high-frequency transmission circuit characterized by functioning as a feedback capacitance of a high-frequency oscillator.

Further, the second invention (corresponding to claim 2)
An oscillation element having a transistor structure having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode; a capacitor having one end connected to the emitter equivalent electrode of the oscillation element and the other end grounded; Connected to the equivalent electrode in parallel with the capacitor,
The other end includes a resistor connected to the output side of the oscillation element, and one end connected in series with the resistor, and an inductor grounded at the other end. A high-frequency oscillation circuit characterized by being configured to have a high-impedance inductance at a frequency.

Further, the third invention (corresponding to claim 3)
The present invention is characterized in that the inductor is realized as a bonding wire for connecting the package accommodating the high-frequency oscillation circuit and the high-frequency oscillation circuit.

A fourth aspect of the present invention (corresponding to claim 4)
A oscillating element having a transistor structure having an emitter-equivalent electrode, a base-equivalent electrode, and a collector-equivalent electrode provided in the laminate, and a capacitor having one end connected to the emitter-equivalent electrode of the oscillation element and the other end grounded. And a first inductor having one end connected to the emitter-corresponding electrode and the other end grounded, wherein the capacitor and the first inductor are connected in parallel,
Is a high frequency oscillation circuit characterized in that the inductor has a high impedance at the oscillation frequency of the oscillation element and is formed of a wiring having a high sheet resistance so as to be a predetermined emitter resistance with respect to a direct current. is there.

The fifth invention (corresponding to claim 5)
A oscillating element having a transistor structure having an emitter-corresponding electrode, a base-corresponding electrode, and a collector-corresponding electrode provided in the laminated body; An inductor is provided, and the first inductor is configured by a wiring having a high sheet resistance so as to be a predetermined bias resistance having a high impedance at an oscillation frequency of the oscillation element and a relatively low thermal noise. A high-frequency oscillation circuit characterized by the following.

The sixth invention (corresponding to claim 6)
Further includes a second inductor having one end connected to the base-corresponding electrode and the other end grounded, wherein the second inductor has a high impedance at the oscillation frequency of the oscillation element and has a relatively low thermal noise. The present invention is characterized in that the present invention is configured by a wiring having a high sheet resistance so as to have a low predetermined bias resistance.

Further, a seventh aspect of the present invention (corresponding to claim 7)
Is an oscillator element having a transistor structure having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode, and one end connected to the emitter equivalent electrode and the other end grounded, with low thermal noise and relatively low resistance. A resistor, having one end connected in series to the resistor and the other end connected to the input side of the high-frequency oscillation circuit;
The high frequency transmission circuit is characterized in that the inductor is configured to have high impedance at the oscillation frequency of the oscillation element.

The eighth invention (corresponding to claim 8)
The present invention is characterized in that the inductor is realized as a bonding wire for connecting the package accommodating the high-frequency oscillation circuit and the high-frequency oscillation circuit.

The ninth invention (corresponding to claim 9)
Comprises an oscillation element having a transistor structure having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode, and a capacitor having one end connected in series to the collector equivalent electrode of the oscillation element. The high frequency transmission circuit is characterized in that the impedance becomes low at the transmission frequency of the device.

The tenth aspect of the present invention (corresponding to claim 9)
The capacitor is provided in a package that houses the high-frequency oscillation circuit, a first terminal serving as a power input connected to the collector equivalent electrode, and a first terminal having one end grounded. The present invention is characterized in that the present invention is realized as a parasitic capacitance between the second terminal and the second terminal connected in parallel.

According to an eleventh aspect of the present invention (corresponding to claim 11), the second terminal is at least two terminals provided adjacent to both sides or one side of the first terminal. The present invention is characterized in that:

According to a twelfth aspect of the present invention (corresponding to claim 12), there is provided an oscillation element having a transistor structure having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode, a package for storing the oscillation element, A first terminal provided on the package, one end of which is connected to an emitter-equivalent electrode of the oscillation element via a bonding wire and serving as an oscillation output; and one end provided on the package is grounded A second terminal provided adjacent to the first terminal, a parasitic capacitance is provided between the first terminal and the second terminal, and the bonding wire forms an inductor. Wherein the parasitic capacitance and the inductor form a low-pass filter that passes a signal having a frequency in a band equal to or lower than the oscillation element. A.

A thirteenth aspect of the present invention (corresponding to claim 13) relates to an oscillation element having two transistor structures having an electrode equivalent to an emitter, an electrode equivalent to a base, and an electrode equivalent to a collector, and the two oscillation elements. A package to be stored, and a first terminal serving as an oscillation output, one end of which is connected to an emitter-corresponding electrode of the oscillation element of one of the high-frequency oscillation circuits via a first bonding wire provided on the package. One end of the high-frequency oscillation circuit provided on the package via a second bonding wire, corresponding to the oscillation output of the oscillation element of the other high-frequency oscillation circuit and the emitter of the oscillation element of the one high-frequency oscillation circuit. A second terminal connected to the electrode and having the other end grounded;
The first bonding wire and the second bonding wire are magnetically coupled to form a balun, and a single-phase output is obtained from the first terminal.

A fourteenth aspect of the present invention (corresponding to claim 14) is a wireless communication apparatus characterized by mounting the high-frequency oscillation circuit according to any one of the first to thirteenth aspects.

In the present invention as described above, for example, an emitter electrode and a base electrode are arranged in an interdigital manner in a transistor, and the feedback capacitance between the base and the emitter is set to a capacitance value satisfying the oscillation condition.

Thus, it is possible to obtain a high-frequency oscillation circuit having a small occupied area without deteriorating characteristics such as C / N.

[0029]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1A is a diagram showing an equivalent circuit of a high-frequency oscillation circuit according to Embodiment 1 of the present invention.

In FIG. 1A, reference numeral 1010 denotes a collector grounded clap oscillation circuit, 1 denotes a base-emitter capacitor, 2 denotes an oscillation transistor, 3 denotes an oscillation output coupling capacitor, 4 denotes an emitter resistor, and 5 denotes an emitter-ground capacitor. , 6 are oscillation output terminals, 7 and 8 are base bias resistors, 9 and 12 are resonance circuit coupling capacitors, 10 is a resonance inductor, 11 is a resonance varicap, 13 is a control voltage application inductor, and 14 is a control voltage application. Terminal, 15
Is a bias application terminal.

Next, FIG. 1B is a configuration diagram of the oscillation transistor of the high-frequency oscillation circuit according to the present embodiment. In FIG. 1B, reference numeral 30 denotes an oscillation transistor structure formed in a laminate made of a semiconductor substrate; 31, 39, a collector electrode; 32, 34, 36, 38, a base electrode;
Reference numerals 3, 35 and 37 are emitter electrodes, 41, 42 and 43 are silicon substrate emitter regions, 44 is a silicon substrate base region, 45 is a silicon substrate collector region, and 46 is a silicon substrate p-type substrate.

FIG. 1C is a diagram schematically showing the upper surface of the high-frequency oscillation circuit according to the present embodiment. FIG.
In (c), 150 is a transistor electrode connection structure,
151, 159 are collector terminals, 152, 154, 15
6, 158 are base terminals; 153, 155, 157 are emitter terminals; 161, 162, 163 are terminal connection wirings.

The structure is as follows. 1010
In the oscillation circuit described above, the electrode of the transistor 2 has an oscillation transistor structure 30, a collector region 45 is formed on a p-type substrate 46, and a base region 44 and emitter regions 41 and 42 are formed inside the collector region 45. ,
43 are formed.

The collector electrodes 31, 39 are drawn out from the outside, and the base electrodes 32, 34, 36, 38 and the emitter electrodes 33, 35, 37 are drawn out from the respective regions alternately.

The electrodes 31 to 39 are connected to terminals 51 to 59 of an aluminum wiring layer via contacts. The collector electrodes 31 and 39 are connected by a terminal connection wiring 63 in an aluminum wiring layer. Similarly, the base electrode is connected by the terminal connection wiring 62, and the emitter electrode is connected by the terminal connection wiring 61.

The total capacitance between the base and the emitter is based on the base electrodes 32, 34, 36 and 38 and the emitter electrodes 33, 35 and 3
7 and a capacitor formed between the base terminals 152, 154, 156, 158 and the emitter terminals 153, 155, 157. The capacitance value is adjusted by adjusting the length, interval, and thickness of the electrode.

According to the above configuration, the capacitance between the base and the emitter is conventionally reduced to the MI having the parasitic capacitance between the substrates.
Since the capacitance between the electrodes of the transistor is used instead of the one formed by the M capacitor, the mounting area is made smaller,
It is possible to obtain a high-frequency oscillation circuit without deterioration of characteristics such as C / N.

(Embodiment 2) FIG. 2A is an equivalent circuit diagram of a high-frequency oscillation circuit according to Embodiment 2 of the present invention.
In FIG. 2A, reference numeral 1010 denotes a common collector clap oscillation circuit, 1 denotes a base-emitter capacitor, 2 denotes an oscillation transistor, 3 denotes an oscillation output coupling capacitor, 4 denotes an emitter resistor, 5 denotes an emitter-ground capacitor, 6
Is an oscillation output terminal, 7, 8 are base bias resistors, 9, 1
2 is a resonance circuit coupling capacitor, 10 is a resonance inductor, 11 is a resonance varicap, 13 is a control voltage application inductor, 14 is a control voltage application terminal, 15 is a bias application terminal, 16 is an emitter resistance output, and 17 is an inductor. It is.

FIG. 2B is a diagram showing the appearance of the packaging of an IC including the high-frequency oscillation circuit according to the second embodiment of the present invention. In FIG. 2B, reference numeral 70 denotes an IC.
Reference numeral 71 denotes an IC chip, 72 denotes a package, 73 denotes an emitter resistance output pad, 74 denotes a bonding wire, and 75 denotes a ground connection terminal.

The operation of the high-frequency oscillation circuit according to the second embodiment of the present invention having the above configuration is as follows.

In a common-collector oscillation circuit such as 1010, an inductor 1 having a high impedance at an oscillation frequency is connected in series with an emitter resistor 4 of an oscillation transistor 2.
7 is connected.

In the packaging of the IC shown in FIG. 2B, a bonding wire 74 is connected to an emitter resistance output pad 73 corresponding to the emitter resistance output 16 and a ground connection terminal 75.
Thus, the inductor 17 is formed. Ground connection terminal 7
Reference numeral 5 is connected to the ground of the mounting board.

Although the equivalent Q value of the capacitor 5 is degraded by the emitter resistor 4 connected in parallel to the capacitor 5, the inductor 17 is connected in series with the emitter resistor 4 so that the inductor Q is connected in parallel to the capacitor 5 at the oscillation frequency. And the equivalent Q value is improved.

According to the above configuration, the equivalent Q value of the capacitor between the emitter and the ground of the oscillation transistor has been deteriorated in the past, but the Q value has been improved and the high frequency without the characteristic deterioration such as C / N has been improved. An oscillation circuit can be obtained.

In the above embodiment, the inductor 17 is connected to the bonding wire 7 of the package 72.
Although provided as 4, it may be provided as another member in the package 72.

In the above-described embodiment, a high-efficiency high-frequency oscillating circuit can be realized by using the high-frequency oscillating circuit according to the first embodiment or each of the later-described embodiments as the common-collector oscillating circuit 101. However, a conventional high-frequency oscillation circuit may be used.

(Embodiment 3) FIG. 3A is a diagram showing an equivalent circuit of a high-frequency oscillation circuit according to Embodiment 3 of the present invention.

In FIG. 3A, 1012 is an oscillation circuit, 1 and 5 are feedback capacitors, 2 is an oscillation transistor, 3 is an oscillation output coupling capacitor, 4 is an emitter resistor, 6 is an oscillation output terminal, and 7 is a base bias resistor. , 9, and 12 are resonance circuit coupling capacitors, 10 is a resonance inductor, 11 is a resonance varicap, 13 is a control voltage application inductor, 1
4 is a control voltage application terminal, 15 is a bias application terminal, 16
Is an inductor equivalent circuit on an IC, and 17 is an inductor.

FIG. 3B is a configuration diagram of a high-frequency oscillation circuit according to the third embodiment of the present invention. In FIG. 3B, reference numeral 1020 denotes an oscillation transistor and an inductor portion between a base and a bias terminal which are formed in a stacked body made of a semiconductor substrate; 201 and 202, an interlayer film of a wiring layer; 203, an interlayer film of a transistor electrode layer; Substrate, 2
05 is a bias application pad, 206 is an inductor on an IC, 207, 215, 216, and 217 are wiring interlayer contacts, 211 is a connection wiring, 212 is a collector terminal, 21
3 is an emitter terminal, 214 is a base terminal, 218 is a collector electrode, 219 is an emitter electrode, 220 is a base electrode, 221 is a collector region, 222 is an emitter region,
23 is a base area.

The operation of the high frequency oscillation circuit according to the third embodiment of the present invention having the above-described configuration is as follows.

In a common-collector oscillation circuit such as 101, an inductor 17 having a high impedance at the oscillation frequency is connected in series to the base bias resistor 7 of the oscillation transistor 2.

If the base resistance is large, C / N
Since the characteristics are deteriorated, a relatively low resistance 7 (for example, 100
) Is connected in series with an inductor 17 having sufficiently high impedance at the oscillation frequency.

When an oscillation circuit is formed on an IC, the inductor 206 is formed by the wiring layer 201 having a large sheet resistance, and a circuit including a series resistance component is equivalently formed.

The connection of the inductor 206 is made in the base region 2
23, one end of an inductor 206 is connected from a base terminal 214 connected via a base electrode 220 and a contact 217 to a connection wiring 211 and a contact 207;
The other end is connected to the bias application pad 205.

The inductor 206 has, for example, a sheet resistance of 10
In the case of 0 mΩ / square, when the spiral inductor is wound 8 turns with a line interval of 10 μm and a line width of 10 μm, 10 nH, 5
It becomes 0Ω. The resistance value can be increased by reducing the line width.

According to the above configuration, a high-frequency oscillation circuit free from deterioration of characteristics such as C / N can be obtained, which has conventionally been a source of noise due to a large base resistance of the oscillation transistor.

Further, since the resistance formed on the IC has poor temperature characteristics, the temperature characteristics can be improved by reducing the resistance.

In the above-described embodiment, the description has been made assuming that one on-IC inductor 206 is provided on the wiring interlayer film 201. However, the oscillation transistor and the base-bias shown in FIG. As in the inter-terminal inductor portion 1021, the bias application pad 224 and the inductor 22
5 and a wiring interlayer film 227 having wiring interlayer contacts 226 is provided to connect the inductor 206 on the wiring interlayer IC and the wiring interlayer contact 226, thereby providing an equivalent circuit diagram of the oscillation circuit 1013 shown in FIG. As described above, a configuration including the inductor 17a in which two inductors are connected in series may be adopted. In this case, the C / N ratio can be further improved.

In the above embodiment, the IC
Although the upper inductor 206 has been described as being connected to the base terminal 214, it may be connected to the emitter terminal 216. In this case, the same effect as that of the oscillation circuit according to the second embodiment can be obtained, and the Q value between the emitter and the ground can be improved.

(Embodiment 4) FIG. 5A is an equivalent circuit diagram of a high frequency oscillation circuit according to Embodiment 4 of the present invention.

In FIG. 5A, 1014 is an oscillation circuit, 1 and 5 are feedback capacitors, 2 is an oscillation transistor, 3 is an oscillation output coupling capacitor, 4 is an emitter resistor, 6 is an oscillation output terminal, and 7 and 8 are bases. Bias resistors 9, 12 are resonance circuit coupling capacitors, 10 is a resonance inductor, 11 is a resonance varicap, 13 is a control voltage application inductor, 14 is a control voltage application terminal, and 15 is a bias application terminal.

FIG. 5B is a diagram showing the appearance of the packaging of an IC including a high-frequency oscillation circuit according to the fourth embodiment of the present invention. In FIG. 5B, reference numeral 50 denotes an IC.
51, an IC chip, 52, a package, 53, a bias application pad, 54, a bonding wire, 55, a ground connection terminal, 56, a bias application terminal, and 57, a capacitance between package terminals.

The operation of the high-frequency oscillation circuit according to the fourth embodiment of the present invention having the above-described configuration is as follows.

In packaging an IC of a common-collector oscillation circuit constituted on an IC such as 1014, a bias application pad 53 corresponding to the bias application terminal 15 is provided.
The bonding wire 54 is connected to a bias applying terminal 56 of the package.

In designing the package, the terminal length is adjusted so that the capacitance value of the capacitance 57 between the package terminals, which is the parasitic capacitance of the ground connection terminal 55 adjacent to the bias application terminal 56, has a low impedance at the oscillation frequency.

The oscillation circuit has a C / N ratio due to noise from the power supply.
The characteristics deteriorate. Therefore, a noise component is removed by forming a bypass capacitor in the power supply line.

According to the above configuration, when high-frequency noise is mixed in the power supply line of the conventional oscillation circuit, C
Although the / N characteristic deteriorates, a high-frequency oscillation circuit free from characteristic deterioration such as C / N can be obtained by reducing the noise component at the terminal end of the package.

In the above-described embodiment, the parasitic capacitance 57 is provided between the bias application terminal 56 and the ground connection terminal 55 of the package 52. It may be provided as a result.

Further, in the above embodiment, by using the high-frequency oscillation circuits 1011 and 1013 of the first or third embodiment in addition to the common-collector oscillation circuit 1014, a more efficient high-frequency oscillation circuit can be obtained. However, a conventional high-frequency oscillation circuit may be used.

(Embodiment 5) FIG. 6A is an equivalent circuit diagram of a high frequency oscillation circuit according to Embodiment 5 of the present invention.

In FIG. 6A, 1015 is an oscillation circuit, 1 and 5 are feedback capacitors, 2 is an oscillation transistor, 3 is an oscillation output coupling capacitor, 4 is an emitter resistor, 6 is an oscillation output terminal, and 7 and 8 are bases. Bias resistors 9, 12 are resonance circuit coupling capacitors, 10 is a resonance inductor, 11 is a resonance varicap, 13 is a control voltage application inductor, 14 is a control voltage application terminal, and 15 is a bias application terminal.

FIG. 6B is a diagram showing the appearance of the packaging of an IC including a high-frequency oscillation circuit according to the fourth embodiment of the present invention. In FIG. 6B, reference numeral 80 denotes an IC.
51, an IC chip, 52, a package, 53, an oscillation output pad, 54, a bonding wire, 55, a ground connection terminal, 56, an oscillation circuit output terminal, and 57, a capacitance between package terminals.

The operation of the high-frequency oscillation circuit having the above configuration according to the sixth embodiment of the present invention is as follows.

In the packaging of an IC having a common-collector oscillation circuit formed on an IC such as 1015, an oscillation output pad 53 corresponding to the oscillation output terminal 6 is connected to an oscillation circuit output terminal 56 via a bonding wire 54. The ground connection terminal 55 adjacent to the oscillation circuit output terminal 56 is connected to the ground.

As described above, the low-pass filter 81 is formed by the bonding wire 54 and the capacitance between the package terminals.

The length and shape of the bonding wire 54 are adjusted, and the capacitance 57 between the package terminals adjusts the terminal length, and adjusts the inductor value and the capacitance value so as to pass the oscillation frequency.

According to the above configuration, a high-level harmonic is output at the output of the oscillation circuit in the related art. However, a high-frequency oscillation circuit having a low harmonic level can be realized without providing a separate circuit externally. I can do it.

Further, in the above-described embodiment, a high-efficiency high-frequency oscillation circuit can be obtained by using high-frequency oscillation circuits 1011 and 1013 of the first or third embodiment instead of common-collector oscillation circuit 1015. However, a conventional high-frequency oscillation circuit may be used.

(Embodiment 6) FIG. 7A is an equivalent circuit diagram of a high-frequency oscillation circuit according to Embodiment 6 of the present invention.

In FIG. 7A, 1016 is a balanced output oscillation circuit, 1, 5, 16 are feedback capacitors, 2, 17 are oscillation transistors, 3, 18 are oscillation output coupling capacitors,
4 and 19 are emitter resistors, 6 and 20 are oscillation output terminals,
7, 8, 21, and 22 are base bias resistors, 9, 12,
23 and 25 are resonance circuit coupling capacitors; 10 is a resonance inductor; 11 and 24 are resonance varicaps;
6 is a control voltage application inductor, 14 is a control voltage application terminal, and 15 is a bias application terminal.

FIG. 7B is a diagram showing the appearance of the packaging of an IC including a high-frequency oscillation circuit according to the sixth embodiment of the present invention. In FIG. 7B, 90 is an IC
Reference numeral 51 denotes an IC chip, 52 denotes a package, 53 and 56 denote oscillation output pads, 54 and 57 denote bonding wires, 55 denotes a ground connection terminal, and 58 denotes an oscillation circuit output terminal.

The structure of the high frequency oscillation circuit according to the sixth embodiment of the present invention having the above-described structure is as follows.

In the packaging of a balanced output oscillation circuit IC configured on an IC for extracting a signal as a balanced signal from the oscillation output terminals 6 and 20 such as 101,
An oscillation output pad 56 corresponding to the oscillation output terminal 6 is connected to an oscillation circuit output terminal 58 by a bonding wire 57.

Further, an oscillation output pad 53 corresponding to the oscillation output terminal 20 is connected to a ground connection terminal 55 by a bonding wire 54. The ground connection terminal 55 is connected to the ground. The bonding wire 57 and the bonding wire 54 are magnetically coupled to form a balun 91.

According to the above configuration, a balanced-unbalanced conversion element is conventionally required outside the IC at the output of the oscillation circuit. However, a single-phase output high-frequency oscillation circuit can be obtained without an external conversion circuit. .

In the above-described embodiment, in addition to the common-collector oscillation circuit 1016, the high-frequency oscillation circuits 1011 and 1103 of the first or third embodiment are used in duplicate, so that more efficient high-frequency oscillation is achieved. Although a circuit can be obtained, a conventional high-frequency oscillation circuit may be used.

Further, by using the high-frequency oscillation circuit according to each of the above-described embodiments in a radio communication device such as a mobile phone or a satellite communication, it is possible to improve the C / N ratio and the sensitivity at the time of reception.
At the time of transmission, an effect of reducing noise included in a transmitted signal is obtained.

In each of the above embodiments, the oscillation circuit has been described as having an oscillation transistor having a base, a collector, and an emitter. However, the present invention is not limited to this. Alternatively, an FET having a drain may be used. In short, the high-frequency oscillation circuit of the present invention can be implemented without being limited to the type of an oscillation element having a transistor structure (triode) having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode. is there.

[0090]

As described above, according to the present invention, when a common-collector oscillation circuit is formed on an IC, an oscillation operation can be performed without using an MIM capacitor having a parasitic capacitance between substrates. Possible, the circuit area is small, C /
It is possible to obtain a high-frequency oscillation circuit without deterioration of characteristics such as N.

[Brief description of the drawings]

FIG. 1A is an equivalent circuit diagram showing the first embodiment of the present invention. FIG. 1B is a configuration diagram showing the first embodiment of the present invention. Figure

2A is an equivalent circuit diagram showing a second embodiment of the present invention. FIG. 2B is a configuration diagram showing a second embodiment of the present invention.

3A is an equivalent circuit diagram showing a third embodiment of the present invention. FIG. 3B is a configuration diagram showing a third embodiment of the present invention.

4A is an equivalent circuit diagram showing another configuration example of the third embodiment of the present invention. FIG. 4B is a diagram showing another configuration example of the third embodiment of the present invention.

FIG. 5A is an equivalent circuit diagram showing a fourth embodiment of the present invention. FIG. 5B is a configuration diagram showing a fourth embodiment of the present invention.

FIG. 6A is an equivalent circuit diagram showing a fifth embodiment of the present invention. FIG. 6B is a configuration diagram showing a fifth embodiment of the present invention.

7A is an equivalent circuit diagram showing a sixth embodiment of the present invention. FIG. 7B is a configuration diagram showing a sixth embodiment of the present invention.

8A is an equivalent circuit diagram showing a conventional high-frequency oscillation circuit. FIG. 8B is a configuration diagram showing a conventional high-frequency oscillation circuit.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 Base-emitter capacitor 2 Oscillation transistor 3 Oscillation output coupling capacitor 4 Emitter resistor 5 Emitter-ground capacitor 6 Oscillation output terminal 7, 8 Base bias resistor 9, 12 Resonance circuit coupling capacitor 10 Resonance inductor 11 Resonance varicap 13 Control voltage application inductor 14 Control voltage application terminal 15 Bias application terminal 30 Oscillation transistor structure 31, 39 Collector electrode 32, 34, 36, 38 Base electrode 33, 35, 37 Emitter electrode 41, 42, 43 Silicon substrate emitter region 44 Silicon Substrate base region 45 Silicon substrate collector region 46 Silicon substrate p-type substrate 50 Transistor electrode connection structure 151, 159 Collector terminal 152, 154, 156, 158 Base terminal 153, 1 5,157 emitter terminal 61, 62, and 63 terminal connection wiring 1010 collector ground Clapp oscillator

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5J081 AA03 AA11 BB01 CC20 CC30 CC42 DD03 DD20 EE02 EE03 EE09 EE18 FF02 FF21 FF26 GG01 JJ12 JJ18 KK02 KK09 KK22 LL02 MM01 MM07

Claims (14)

[Claims] An oscillation element having a transistor structure having a plurality of emitter-corresponding electrodes, a plurality of base-corresponding electrodes, and a collector-corresponding electrode provided in a laminated body, wherein the plurality of base-corresponding electrodes are connected to the plurality of emitters A parasitic capacitance formed between the equivalent electrode and the base equivalent electrode is interposed between the equivalent electrode and the interdigital, and a parasitic capacitance formed between the emitter equivalent electrode and the base equivalent electrode serves as a feedback capacitance during oscillation of the oscillation element. A high-frequency transmission circuit characterized by functioning. 2. An oscillation element having a transistor structure having an emitter-corresponding electrode, a base-corresponding electrode, and a collector-corresponding electrode; one end connected to the emitter-corresponding electrode of the oscillation element;
A capacitor whose other end is grounded, one end of which is connected to the emitter equivalent electrode so as to be in parallel with the capacitor, and the other end of which is connected to the output side of the oscillation element; and one end of which is connected to the resistor. An inductor connected in series and having the other end grounded, wherein the inductor is configured to be a high impedance inductance at the oscillation frequency of the oscillation element. . 3. The high-frequency oscillation circuit according to claim 2, wherein the inductor is realized as a bonding wire that connects the package accommodating the high-frequency oscillation circuit and the high-frequency oscillation circuit. 4. An oscillating element having a transistor structure having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode provided in the laminate, one end connected to the emitter equivalent electrode of the oscillation element,
A capacitor having the other end grounded; and a first inductor having one end connected to the emitter-corresponding electrode and the other end grounded, wherein the capacitor and the first inductor are connected in parallel. The first inductor is configured by a wiring having a high impedance at an oscillation frequency of the oscillation element and having a high sheet resistance so as to have a predetermined emitter resistance with respect to a direct current. High frequency oscillation circuit. 5. An oscillating element having a transistor structure having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode provided in a laminate, and one end connected to the base equivalent electrode and receiving power from the other end. A first inductor, wherein the first inductor has a high impedance at the oscillation frequency of the oscillation element and a wiring having a high sheet resistance so as to be a predetermined bias resistance with relatively low thermal noise. A high-frequency oscillation circuit characterized by being performed. 6. One end is connected to the base equivalent electrode,
A second inductor having the other end grounded, wherein the second inductor has a high impedance at an oscillation frequency of the oscillation element and a high sheet resistance that becomes a predetermined bias resistance with relatively low thermal noise. The high-frequency oscillation circuit according to claim 5, wherein the high-frequency oscillation circuit is configured by a wiring having: 7. An oscillation element having a transistor structure having an emitter-corresponding electrode, a base-corresponding electrode, and a collector-corresponding electrode, and a relatively low-resistance thermal noise having one end connected to the emitter-corresponding electrode and the other end grounded. A resistor having a small value, an inductor having one end connected in series to the resistor and the other end connected to the input side of the high-frequency oscillation circuit, wherein the inductor has an oscillation frequency of the oscillation element, A high frequency transmission circuit characterized by being configured to have high impedance. 8. The high-frequency oscillation circuit according to claim 7, wherein the inductor is realized as a bonding wire that connects the package that houses the high-frequency oscillation circuit and the high-frequency oscillation circuit. 9. An oscillation element having a transistor structure having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode; and a capacitor having one end connected in series to the collector equivalent electrode of the oscillation element. And a high-frequency transmission circuit having a low impedance at the transmission frequency of the oscillation element. 10. The capacitor according to claim 1, wherein the capacitor includes a first terminal provided as a power supply input connected to the electrode corresponding to the collector, the first terminal being provided in a package accommodating the high-frequency oscillation circuit, and one end being grounded. 10. The high frequency transmission circuit according to claim 9, wherein the high frequency transmission circuit is realized as a parasitic capacitance between the first terminal and a second terminal connected in parallel. 11. The high frequency transmission circuit according to claim 10, wherein the second terminal is at least two terminals provided adjacent to both sides or one side of the first terminal. 12. An oscillation element having a transistor structure having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode, a package for storing the oscillation element, and one end provided on the package via a bonding wire. A first terminal connected to an emitter equivalent electrode of the oscillation element and serving as an oscillation output, and one end provided on the package, one end of which is grounded;
A second terminal provided adjacent to the first terminal; a parasitic capacitance between the first terminal and the second terminal; a bonding wire forming an inductor; The high-frequency oscillation circuit according to claim 1, wherein the parasitic capacitance and the inductor form a low-pass filter that passes a signal having a frequency in a band equal to or lower than the oscillation element. 13. An oscillation element having two transistor structures, having an emitter equivalent electrode, a base equivalent electrode, and a collector equivalent electrode, a package for storing the two oscillation elements, and one end provided in the package. A first terminal serving as an oscillation output connected to an emitter-corresponding electrode of the oscillation element of one of the high-frequency oscillation circuits via a first bonding wire; A second connection, which is connected to an oscillation output of the oscillation element of the other high-frequency oscillation circuit and an emitter equivalent electrode of the oscillation element of the one high-frequency oscillation circuit via a bonding wire, and has the other end grounded; And a first bonding wire and a second bonding wire are magnetically coupled to form a balun. High-frequency oscillator, characterized in that the single-phase output is obtained. 14. A wireless communication device comprising the high-frequency oscillation circuit according to claim 1.