I261328Q〇twfd〇^ 九、發明說明： 【發明所屬之技術領域】 制^發明是有關於一種應用於深紫外線領域之微影蝕 刻衣転，且特別是有關於一種電漿蝕刻製程以應用於深紫 外線領域之微影蝕刻製程。 “、’、 【先前技術】 在積體電路蓬勃發展的今日，元件縮小化盥積隼化 是必然之趨勢，也是各界積極發展的重要課題。其中蝕刻 製程從積體電路製造的最前段至後段扮演报重要之角色， 往往與微影製程構成關鍵技術。蝕刻製程可分為兩種，一 3濕_技H侧是絲職術。由於乾⑽m ϋ可進行非等向性侧之優點，而成為目前積體電路 衣私中不可或缺之技術。 乾蝕刻技術中’包括一種稱為電漿蝕刻（plasma chmg)的技#。它是電漿將反應氣體的分子 =對薄膜材質具有反應性的離子。然後，藉著離子 =化學反應，把暴露於電漿下的薄膜反應成揮發性的 (Volatile)生成物，而後被真空系統抽離，、 製程。 逆仃蝕刻 習知的蝕刻製程是先於待蝕刻的材料層上 化光阻層之後，再以此圖案化光阻層為蝕刻以》成圖案 ，，獅，以蝕刻掉材料層上未被圖案化光阻^電 4分，而使光阻圖案轉移至材料層。 日後盍的 然而，當微影製程技術推追至深紫外線領域、 尤其 是193nm與157nm時，在上述蝕刻製程的過程中，193nm 與157nm之光阻層會因為受到電漿蝕刻氣體的衝擊而於 其表=形成凹洞或條紋（station)現象，此現象的產生 將使付光阻層|面及輪廓變得粗糙(r〇ugh)，而粗链的於 廓將可能會轉移至底下材料層。亦即是，在侧製程中Γ 除了被細層裸露出的材料層會被烟之外，光阻層的表 面也會同較職職體的轉，目岐光阻層表面變得 粗糙，進而影響底下材料層圖案的完整性。 【發明内容】 本卷明的目的就是在提供一種應用於深紫外線領域 之微影_製程，藉由此製程以解決習知製程中侧氣體 ，對罩幕層造成衝擊而使得轉層的輪廓變得粗糙 題0 本發明的又—目的是提供—觀胁深紫外線領域 蝕刻製程，藉由此製程’能夠在罩幕層表面上形成 移後二完==免罩幕層受雜刻氣體衝擊*影響到圖案轉 r，2^提$—觀祕深紫外線職之微影韻刻製 :影機台係包括有經深紫外線 機么所心 4罩幕層’其中上述之深紫外線微影 幕^作Α為之曝光光束係、為193™或157nm。然後以罩 ^漿钱幕進行電聚钱刻製程以圖案化材料層。其 及氣衣程所使用之钱刻氣體至少包括含齒素氣體以 山米e，其中鹵素為氟⑺、氯（α)、漠㈣或其組合。 f.doc/c 依照上述，本發日⑽為純·_ 入ΛΙ乱。而加人I氣以進行侧 A體中力 ㈣氣體衝擊而使得罩幕層輪廓;二幕層受到 本發明另提出-種應用於深紫外 先提供-材料層，且材料層上係包== =:r之曝光光束上 罩幕進行電酬製程以圖案化材料層， 所使用之蝕刿：ϊ表面上形成保護層。其中電漿蝕刻製程 中南素為氟二乳二,少包括含鹵素氣體以及氙氣(xe)，其 中鹵素為氣(F)、氣(C1)、溴(Br)或其組合。 由上ii 了纟本發明藉由以含鹵素氣體以及氣氣 電漿侧氣體以進行⑽製程。由於電漿^ 敍刻材料層之外，還會在罩幕層表面形成保護層體 避免罩幕層受到蝕刻氣體衝擊而影響罩幕層圖案轉移至 料層後的圖案完整性。 ' 為讓本發明之上述和其他目的、特徵和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖式”，作詳細 呑兄明如下。 【實施方式】 圖1A至圖ic所緣示為依照本發明一較佳實施例之 應用於深紫外線領域之微影蝕刻製程的流程剖面示意圖。 首先’凊參照圖1A，基底200上已形成有材料層202 與罩幕材料層205。其中材料層202例如是介電材料層或 I2613^Q0twfdoc/c 是導電材料層。而介電材料層例如是氮切層、氧化石夕層、 氮氧化石夕層或是低介電材料層，導電材料層例如是多^石夕 層或金屬層。 之後，請參照圖1B，對罩幕材料層2〇5進行圖案化 製程，以於基底200上形成罩幕層2〇5a。而此罩幕層2〇元 係做為後續應用於深紫外線領域之微影蝕刻製程之蝕刻罩 幕之用。 在一較佳實施例中，上述的罩幕材料層2〇5例如是 由一光阻層204所構成，而圖案化罩幕材料層2〇5(光阻 層204)之方法例如是進行一微影製程，以形成由光阻層 204a所構成之罩幕層205a。光阻層204的材質例如是由 树月曰，感光劑及溶劑所混合而成的感光材料。而光阻層 的形成方法例如是首先於材料層2〇2上進行旋轉塗佈法 (spin coating)，將感光材料塗佈在材料層2〇2上，再進行 二道軟烤的步驟，以移除感光材料中的溶劑，使原本是液 悲的感光材料，成為固態的一光阻層204。 在另一較佳實施例中，罩幕材料層2〇5除了光阻層2〇4 外，更包括形成在光阻層204底下之底部抗反射層2〇3。 其中此罩幕材料層205的形成方法例如是於材料層2〇2上 以化學氣相沈積法或是塗佈法形成底部抗反射層2〇3。接 著，再以先前所述之形成方法於底部抗反射層2〇3上形成 光阻層204。而底部抗反射層2〇3例如是有機底部抗反射 層或無機底部抗反射層。而圖案化罩幕材料層2〇5(光阻 層204及底部抗反射層2〇3)之方法例如是先進行一微影I261328Q〇twfd〇^ Nine, invention description: [Technical field of invention] The invention is related to a lithography etching coating applied in the field of deep ultraviolet rays, and particularly relates to a plasma etching process for application to deep Micro-etching process in the field of ultraviolet light. ",", [Prior Art] In today's booming development of integrated circuits, component shrinkage is an inevitable trend, and it is also an important topic for active development. The etching process is from the front to the back of the integrated circuit manufacturing. Playing the important role of the newspaper often forms a key technology with the lithography process. The etching process can be divided into two types, one is wet and the other is on the side of the wire. Since the dry (10) m ϋ can carry out the advantages of the anisotropic side, It is an indispensable technology in the current integrated circuit. In the dry etching technology, it includes a technique called plasma chmg. It is the molecule of the reaction gas of the plasma = reactive to the film material. Then, by ion = chemical reaction, the film exposed to the plasma is reacted into a volatile (Volatile) product, which is then evacuated by a vacuum system, and the process is reversed. After the photoresist layer is layered on the material layer to be etched, the patterned photoresist layer is etched to form a pattern, and the lion is etched away from the unpatterned photoresist on the material layer. Make light The pattern is transferred to the material layer. However, when the lithography process is pushed back to the deep ultraviolet field, especially at 193 nm and 157 nm, the 193 nm and 157 nm photoresist layers are subjected to plasma during the above etching process. The impact of the etching gas on the surface = the formation of a pit or a staging phenomenon, the occurrence of this phenomenon will make the surface and contour of the photoresist layer rough, and the profile of the thick chain will be possible Will be transferred to the bottom material layer. That is, in the side process, except for the material layer exposed by the fine layer will be smoked, the surface of the photoresist layer will also be transferred to the professional body, witnessing the photoresist layer. The surface becomes rough, which in turn affects the integrity of the pattern of the underlying material layer. SUMMARY OF THE INVENTION The purpose of the present invention is to provide a lithography process for use in the field of deep ultraviolet rays, by which the process can be used to solve the middle side of the conventional process. The gas causes an impact on the mask layer and makes the contour of the layer become rough. The purpose of the present invention is to provide an etching process for the deep ultraviolet field, whereby the process can be formed on the surface of the mask layer. Rear The second finish == free mask layer is affected by the engraved gas impact * affects the pattern to turn r, 2 ^ mention $ - view secret deep UV job micro-shadow rhyme system: the camera system includes the deep ultraviolet machine 4 cover layer 'the above-mentioned deep ultraviolet micro-screen ^ as the exposure beam system, 193TM or 157nm. Then use the hood to make the electricity engraving process to pattern the material layer. The money engraved gas used in the clothing process includes at least a gas containing dentate gas, wherein the halogen is fluorine (7), chlorine (α), desert (four) or a combination thereof. f.doc/c According to the above, the present day (10) is pure · _ Into the chaos. And add I gas to carry out the side A body medium (four) gas impact to make the mask layer contour; the second curtain layer is further proposed by the present invention - the application is applied to the deep ultraviolet first - material layer, and the material On the layer of the package, ===:r, the mask is subjected to a reproducing process to pattern the material layer, and the etching layer is used: a protective layer is formed on the surface of the crucible. Among them, the plasma etching process is a fluorinated diurethane, and includes a halogen-containing gas and a helium gas (xe), wherein the halogen is gas (F), gas (C1), bromine (Br) or a combination thereof. From the above, the present invention is carried out by a process of (10) by using a halogen-containing gas and a gas plasma side gas. In addition to the layer of the plasma, a protective layer is formed on the surface of the mask layer to prevent the mask layer from being impacted by the etching gas and affecting the pattern integrity after the mask layer pattern is transferred to the layer. The above and other objects, features, and advantages of the present invention will become more apparent and understood. Figure ic is a schematic cross-sectional view showing a process of a lithography process applied to the deep ultraviolet field in accordance with a preferred embodiment of the present invention. First, referring to Fig. 1A, a material layer 202 and a mask material have been formed on the substrate 200. Layer 205. The material layer 202 is, for example, a dielectric material layer or I2613^Q0twfdoc/c is a conductive material layer, and the dielectric material layer is, for example, a nitrogen cut layer, a oxidized stone layer, a nitrous oxide layer or a low dielectric layer. The material layer, the conductive material layer is, for example, a multi-layer or a metal layer. Thereafter, referring to FIG. 1B, the mask material layer 2〇5 is patterned to form a mask layer 2〇5a on the substrate 200. The mask layer 2 is used as an etch mask for the lithography process in the deep ultraviolet field. In a preferred embodiment, the mask material layer 2 〇 5 is, for example, one. The photoresist layer 204 is formed, and the patterned mask material is formed. The method of the layer 2 〇 5 (the photoresist layer 204) is, for example, a lithography process to form a mask layer 205a composed of the photoresist layer 204a. The material of the photoresist layer 204 is, for example, a tree sputum, a sensitizer. And a photosensitive material obtained by mixing a solvent, and the photoresist layer is formed by, for example, first performing spin coating on the material layer 2〇2, and coating the photosensitive material on the material layer 2〇2. The second soft baking step is further performed to remove the solvent in the photosensitive material to make the photosensitive material which is originally liquid and sad, to become a solid photoresist layer 204. In another preferred embodiment, the mask material layer 2 The 〇5 includes, in addition to the photoresist layer 2〇4, a bottom anti-reflection layer 2〇3 formed under the photoresist layer 204. The method for forming the mask material layer 205 is, for example, chemistry on the material layer 2〇2. The bottom anti-reflection layer 2〇3 is formed by a vapor deposition method or a coating method. Then, the photoresist layer 204 is formed on the bottom anti-reflection layer 2〇3 by the formation method previously described. The bottom anti-reflection layer 2〇 3 is, for example, an organic bottom anti-reflective layer or an inorganic bottom anti-reflective layer. The patterned mask material layer The method of 2〇5 (the photoresist layer 204 and the bottom anti-reflection layer 2〇3) is, for example, first performing a lithography
I2613l.dw/C 製程以圖案化光阻層204，再進行—㈣製程以圖案 部抗反射層2G3 ’而形成由光阻層购與底部 居 2〇3a所構成之罩幕層205a。 反射層 —然後，請參照圖iC，以罩幕層版作為餘刻罩 行-電漿侧製程206以餘刻材料層2〇2，而形 材料層職。其中電祕刻製程施所使用= ，少包括含i素氣體以及聽(Xe)，其巾_素為氣⑺、 氟(C1)、漠(Br)或其組合。 其中含氟氣體係選自邙4、c4F8、ch3F、CHF3、CF汨 及其組合。含氯化合物氣體係選自C12、BC13、CFclg、2 CF2C12、CF3C1及其組合。含溴氣體係選自HBr、化价、 CF^lBr及其組合。而在—較佳實補巾，上述之姓刻氣 體中更包括有其他添加氣體，此添加氣體例如是係選 氣、氮氣及其組合。 而且，於電漿蝕刻製程中，其蝕刻氣體之間的比例 是含鹵素氣體比錢為1:1至n5G。更佳的是其 為 1 : 1 至 1 : 10。 ,上述實施例中，於蝕刻氣體中添加氙氣以進行蝕刻 ，程可以使得罩幕層2G5a的表面不會受到餘刻氣體的衝 擊而變得粗糙。這是因為統較傳統的氬氣㈤或氦氣(He) 更易於被離子化，㈣子化的_子會抓住侧氣體中之 含鹵素氣體的自素離子，所以可使得罩幕層2G5a的表面 在電漿爛製程進行時不易受到侧氣體的衝擊而受到損 害，因此在應用於深紫外線領域之微影蝕刻製程後，較不 12613¾ 〇twf.d〇c/c 會使罩幕層205a的表面變得粗糙。 外’在另一較佳實施例中，以罩幕層205a做為餘 ^幕，並以含_素氣體與氤氣作為電漿#刻氣體以進行 製程時，離子化的氣氣除了會抓住㈣氣體 氣體的时離子之外，更包括與鹵素離子結合而於 罩幕層205a的表面形成如圖2所示之保護層搬， 302例如是齒化氤材質層(XeXp)，且其至少 罩幕層205之表面’以保護其不受侧氣體衝擊而 於表面產生凹洞或條紋現象。 # 中上述钱刻軋體所使用之含齒素氣體例如是含氟 ，二、含氯氣體或含溴氣體。倘若電雜刻製程中是以含 5體與氣氣做核刻氣體時，其含氟氣體係選自CF4、 二、CHF3、CF^2及其組合，則所形成之保護層 制如s ^#例如是氟化氤化合物(XeFpl)，而氟化氤化合物 ，、3虱乳體係遥自Cj2、BC^、CF 、 =1及人其組合，而所形成之保護層搬之材質_是氯 矾。物（XeClp2)，氯化氙化合物例如是或 體與聽做絲刻4體時，其含漠 之㈣Ϊ , ^、卿收及其組合，而所形成 :m 〇2之材質例如是溴化氙化合物(XeBrp3)，溴化 :氣;如：祕或驗2。同樣的，上述之各種蝕 體^此.:照實際所需之侧率而添加有其他添加氣 體此添加氣體例如是係選自氧氣、氮氣及其 I26132Q_〇c/c 由本發明上述實施例可知，保護層3〇2玎避免罩幕 層205a的表面受到蝕刻氣體的衝擊而造成罩幕層25加表 面粗糙的現象。 表τ、上所述，本發明於應用於深紫外線領域之微影蝕 刻製程之電漿蝕刻製程中添加氙氣以做為蝕刻氣體，其可 以避免罩幕層205a受到蝕刻氣體衝擊，而使表面產生凹 /同或粗糙的情況。此外，添加氙氣作為蝕刻氣體亦可於罩 幕層205a上形成保護層3〇2，此保護層3〇2同樣可保護 罩幕層以使其不受蝕刻氣體衝擊，而可保持罩幕層2〇^ 春 圖案轉移至底下材料層202後之圖案完整性。 雖然本發明已以較佳實施例揭露如上，然其並非用 以限J本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作些許之更動與潤飾，因此本發明之^ 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1A至圖1C所繪示為本發明一較佳實施例之應用 於深紫外線領域之微影姓刻製程的流程剖面示意圖。μ 圖2所繪示為本發明另一較佳實施例之應用於 · 外線領域之微影蝕刻製程的剖面示意圖。 ” 【圖式標記說明】 200 ·基底 202 :材料層 202a:圖案化材料層 203、203a :底部抗反射層 11 I2613^8Q0twfdoc/c 204、204a :光阻層 205 ·罩幕材料層 205a :罩幕層 206 :電漿蝕刻製程 302 :保護層The I2613l.dw/C process is used to pattern the photoresist layer 204, and then the - (4) process is used to form the pattern anti-reflection layer 2G3' to form a mask layer 205a composed of a photoresist layer and a bottom layer 2?3a. Reflective Layer - Then, referring to Figure iC, the mask layer is used as the reticle-plasma side process 206 with the remaining material layer 2〇2, and the material layer is layered. Among them, the electric secret engraving process uses =, including the gas containing i and the hearing (Xe), and the towel is gas (7), fluorine (C1), desert (Br) or a combination thereof. The fluorine-containing gas system is selected from the group consisting of ruthenium 4, c4F8, ch3F, CHF3, CF oxime and combinations thereof. The chlorine-containing compound gas system is selected from the group consisting of C12, BC13, CFclg, 2 CF2C12, CF3C1, and combinations thereof. The bromine containing gas system is selected from the group consisting of HBr, valence, CF^lBr, and combinations thereof. In the preferred embodiment, the above-mentioned gas is further included with other additive gases, such as gas, nitrogen and combinations thereof. Moreover, in the plasma etching process, the ratio between the etching gases is 1:1 to n5G for the halogen-containing gas. More preferably, it is from 1: 1 to 1: 10. In the above embodiment, helium gas is added to the etching gas for etching so that the surface of the mask layer 2G5a is not roughened by the impact of the residual gas. This is because the conventional argon (five) or helium (He) is more easily ionized, and the (iv) sub-segment will seize the self-supplying ions of the halogen-containing gas in the side gas, so that the mask layer 2G5a can be made. The surface is not easily damaged by the impact of the side gas during the plasma roturing process, so after applying to the lithography process in the deep ultraviolet field, the 126133⁄4 〇twf.d〇c/c will cause the mask layer 205a. The surface becomes rough. In another preferred embodiment, the mask layer 205a is used as a residual screen, and when the gas containing _ gas and helium is used as the plasma to perform the process, the ionized gas will be caught. In addition to the (iv) gas gas, the photo ion is further combined with the halogen ion to form a protective layer on the surface of the mask layer 205a as shown in FIG. 2, and 302 is, for example, a toothed enamel material layer (XeXp), and at least The surface of the mask layer 205 is 'protected against side gas impact to create pits or streaks on the surface. The dentate gas used in the above-mentioned money-cutting body is, for example, a fluorine-containing gas, a chlorine-containing gas or a bromine-containing gas. If the electro-engraving process is carried out with a gas containing 5 bodies and gas, the fluorine-containing gas system is selected from the group consisting of CF4, II, CHF3, CF^2 and combinations thereof, and the protective layer is formed as s ^ #为为氤 氤 compounds (XeFpl), and 氤 氤 compounds, 3 虱 milk system from Cj2, BC ^, CF, =1 and a combination of people, and the protective layer formed by the material _ is chlorine alum. (XeClp2), a ruthenium chloride compound, for example, is a body or a body of a silkworm, which contains a mixture of (4) Ϊ, ^, qing, and combinations thereof, and is formed such that the material of m 〇 2 is, for example, lanthanum bromide. Compound (XeBrp3), bromination: gas; such as: secret or test 2. Similarly, the various kinds of the above-mentioned etched bodies are added with other additive gases, such as oxygen, nitrogen, and I26132Q_〇c/c, which are known from the above embodiments of the present invention. The protective layer 3〇2玎 prevents the surface of the mask layer 205a from being impacted by the etching gas, thereby causing the surface of the mask layer 25 to be roughened. Table τ, as described above, the present invention adds helium gas as an etching gas in a plasma etching process applied to a micro-etching process in the deep ultraviolet field, which can prevent the mask layer 205a from being impacted by an etching gas and causing a surface to be generated. Concave/same or rough condition. In addition, the addition of germanium gas as an etching gas can also form a protective layer 3〇2 on the mask layer 205a, and the protective layer 3〇2 can also protect the mask layer from the impact of the etching gas, and can maintain the mask layer 2图案^ The pattern integrity after the transfer of the spring pattern to the underlying material layer 202. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and it is intended that the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1C are schematic cross-sectional views showing the process of a lithography process in the field of deep ultraviolet rays according to a preferred embodiment of the present invention. FIG. 2 is a cross-sectional view showing a microlithography etching process applied to an external field according to another preferred embodiment of the present invention. [Description of Patterns] 200: Substrate 202: Material layer 202a: Patterned material layer 203, 203a: Bottom anti-reflection layer 11 I2613^8Q0twfdoc/c 204, 204a: Photoresist layer 205 · Mask material layer 205a: Cover Curtain 206: plasma etching process 302: protective layer
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