1261102 九、發明說明·· 【發明所屬之技術領域】 特別是指一種集熱器 能源再利用的觀念 本發明是有關於一種集熱裝置 之製造方法。 【先前技術】 因應地球資源越來越匱乏，所以 已晋遍地被提倡及使用當中。 ’這種真空蓄能的集熱 蓄存在真空容室中，藉 ’讓源能能夠被再利用 而針對現有的真空集熱器而言 結構與原理，是利用外部吸熱後， 由真空狀態，氣體流動不易之特性 ’而達到真空集熱的目的。 准現有的真空集熱益，如發明人先前提申獲准的第 91 1 12928唬發明專利案’是為單層結構，仍有蓄能結構不 夠精良，冑致在蓄能之後的傳&效果嫌不[以致於蓄能 再利用的效果無法充分地發揮，故值得再加以改善。 【發明内容】 因此，本發明之目的，即在提供一種可提高蓄能效率 的集熱器之製造方法。 於是’本發明集熱器之製造方法包含一第一真空裝置 、一第二真空裝置、一金屬板、一阻隔層，及一熱電半導 體。 遠第一真空裝置為一中空殼體，並界定有一第一真空 室。 該第二真空裝置為一包覆在該第一真空裝置外部的中 1261102 空殼體，並與該第一冑空裝置界定出一第二真空室。 該金屬板裝設於該第一真空裝置内部Γ並具有一本體 部，及一由該本體部向外延伸凸出該第一、二真空裝置的 延伸部，該金屬板透過該第一、二真空裝置可吸收外部能 源。 該阻隔層包覆在該延伸部外側。 4熱電半導體貼附在該金屬板的延伸部上，並穿伸出 ，亥阻隔層而露出外部’以提供感應傳導該金屬板的能源。 本务明的功效，是利用内、外層間隔環繞的第一、二 f空裝置包覆金屬板，當熱源穿透第一、二真空裝置並且 …、射在金屬板上，可達到能源集中且能源不流失的效果， 再藉由熱電半導體感應傳導金屬板的高溫，以期達到高功 率之能源再利用的使用目的。 【實施方式】 、有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之—個較佳實施例的詳細說明中， 清楚的呈現。 參閱圖1 ’本發明集熱器之製造方法之較佳實施例包含 :第—真空裝置丨、-第二真空裝置2、-金屬板3、—阻 隔層4，及一熱電半導體5。 該第一真空裝置1是由四周壁11、12、13、14圍^且 成-矩形中空殼體，並且界定出—第一真空室1〇，其；： Μ 11 A㈣材質製成’其餘三個周壁12、13、 膠材質製成’且該周壁12上開設有—開口⑵。 6 1261102 赤該第二真空裝置2是由四周壁2卜22、23、24圍繞组 成一矩形中空殼—，廿彳 '' 巫與該第-真空裝置1之間界定出- 弟一真工至20，盘該筮 古 相對應的該周壁；二真空裝置1之周壁1 、 τ為強化玻璃材質製成，其餘三個周壁 °為耐回之塑膠材質製成，且該周f 22上開 没有一開口 221。 壯：板3為銅、鋁等導電性佳的金屬材質製成，並 衣设於該第—直如爿士罢 , 、 ”二置1内部，並具有—本體部31 ,及一 由向外延伸且依序穿出該第—、二真空裝置i :該金：1;1更= 增加蓄熱、二-外表面鑛上黑色塗料33’藉此，可 =隔層4為塑膠材質製成，該阻隔層4密封包覆在 该金屬板3的延伸部32外側。 層的二穿：半導體5貼附在該金屬板3上且嵌設在該阻隔 3延伸^L 41上’該熱電半導體5具有-貼附在該金屬板 的發：2上的集熱® 5卜及-與該集熱面51反向設置 該發 、亥集熱面51提供感應該金屬板3的能源，而 例中，集熱面51感應的能源向外傳導。在實施 於該埶I:電半導體5是-高功率高效能的致冷晶片，至 。’、电+導體5的細部結構係另案提申，在此不予多贅 使用時，& 之透明破源、1〇0照射在該第—、二真空裝置1、2 坡㈣的周側心21上，讓能源_直接投射在該 1261102 金屬板3的本體部31上，此時，該金屬板3的本體部31 逐漸升溫並且向上傳導至該延伸部32，而，貼附在該全屬 :二之::…的熱電半導體5，立刻感應已蓄集高溫 之遠邊3的熱能’並且，經由該發熱部”向外傳導， 此時，當該發熱部52面貼在—熱水器的儲水裝置6上 '，加 熱該儲水裝置6内的液體’就可形成一熱水加熱裝置。 其次，由於本發明之集熱器是利用該第―、二真空A 置1、2分別形成内、外兩層間隔的真空容室（即 真空室Π)、2〇)，因此，雙層真空蓄熱模式，㈣的執源= 留果不易外流，再加上配合塗黑之金屬板3的、蓄敎 有:==在第—、二真空室10、20的熱能，即可 有效地被傳導至熱電半導體5上，而，搭配高功率之Ρ 半導體即致冷晶片）的高效能熱感應傳導 = 集熱的目的與功效。 致迅速 隹方=能!：0之供給方式，可利用曝曬方式或是聚 =2之彳用陽光照射方式’約可達到攝氏赋左 =…’利用聚焦方式則可達到達到攝氏㈣。c左右 不户的缺相.又於現有早層真空集熱器之蓄能效果仍 發明利用雙層真空集熱結構，除了藉由該 月匕源照射該金屬板3得到高溫之外，進入於該第 -、-真…。、20的熱能值留於内部且使金屬板3外周 圍溫，不易流失’再加上塗黑之金屬板 敎1261102 IX. DESCRIPTION OF THE INVENTION · TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of manufacturing a heat collecting device. [Prior Art] In response to the growing scarcity of the Earth's resources, it has been promoted and used. 'The vacuum accumulating heat accumulates in the vacuum chamber, and the structure and principle for the existing vacuum collector can be reused by the source energy, which is the external vacuum, after the vacuum state, the gas The characteristics of the flow are not easy to achieve the purpose of vacuum heat collection. The existing vacuum collection heat gain, as the inventor has previously approved the approval of the 9111 12928 invention patent case, is a single-layer structure, and the energy storage structure is still not so good, resulting in the transmission and effect after energy storage. I don’t think so [the effect of re-use of energy can not be fully utilized, so it is worth improving. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of manufacturing a heat collector that can improve energy storage efficiency. Thus, the method of manufacturing the collector of the present invention comprises a first vacuum device, a second vacuum device, a metal plate, a barrier layer, and a thermoelectric semiconductor. The far first vacuum device is a hollow housing and defines a first vacuum chamber. The second vacuum device is a hollow 1261102 outer casing that is wrapped around the first vacuum device and defines a second vacuum chamber with the first hollow device. The metal plate is disposed inside the first vacuum device and has a body portion, and an extension portion of the first and second vacuum devices is extended outwardly from the body portion, and the metal plate passes through the first and second portions. The vacuum unit absorbs external energy. The barrier layer is wrapped on the outside of the extension. 4 The thermoelectric semiconductor is attached to the extension of the metal plate and extends through the barrier layer to expose the outer portion to provide an energy source for inductively conducting the metal plate. The effect of the present invention is to cover the metal plate with the first and second air devices surrounded by the inner and outer layers. When the heat source penetrates the first and second vacuum devices and is shot on the metal plate, the energy concentration can be achieved. The effect of energy loss is lost, and the high temperature of the metal plate is induced by the thermoelectric semiconductor to achieve the purpose of high-power energy reuse. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to Fig. 1, a preferred embodiment of the method of manufacturing a collector of the present invention comprises: a first vacuum device, a second vacuum device 2, a metal plate 3, a barrier layer 4, and a thermoelectric semiconductor 5. The first vacuum device 1 is surrounded by surrounding walls 11, 12, 13, 14 and formed into a rectangular hollow casing, and defines a first vacuum chamber 1〇, which: Μ 11 A (four) material is made of 'the rest The three peripheral walls 12, 13 are made of glue material and the peripheral wall 12 is provided with an opening (2). 6 1261102 The second vacuum device 2 is defined by a surrounding hollow wall 2, 22, 23, 24, which is defined by a rectangular hollow shell, which is defined between the witch and the first vacuum device. Up to 20, the peripheral wall corresponding to the old one; the peripheral wall 1 and τ of the second vacuum device 1 are made of tempered glass material, and the other three peripheral walls are made of plastic material resistant to the back, and the circumference f 22 is opened. There is no opening 221. Zhuang: The plate 3 is made of a metal material with good conductivity such as copper or aluminum, and is clothed on the first - as a gentleman, "two insides, and has a body portion 31, and one is outwardly Extending and sequentially passing out the first and second vacuum devices i: the gold: 1; 1 more = increasing the heat storage, the second-outer surface mineral black paint 33', thereby, the partition layer 4 is made of plastic material, The barrier layer 4 is hermetically sealed on the outside of the extending portion 32 of the metal plate 3. The second layer of the layer is attached to the metal plate 3 and embedded on the barrier 3 extension 41. The thermoelectric semiconductor 5 The heat-collecting layer 5 attached to the hair of the metal plate is disposed opposite to the heat collecting surface 51, and the heat collecting surface 51 provides energy for sensing the metal plate 3, and in the example, The energy source induced by the heat collecting surface 51 is conducted outward. In the implementation of the 埶I: the electric semiconductor 5 is a high-power high-efficiency refrigerant chip, to the ', the electric + conductor 5 detailed structure is another case, in When this is not used, the transparent source of the &, 1〇0 is irradiated on the circumferential side core 21 of the first and second vacuum devices 1, 2 (4), and the energy _ is directly projected on the 1 261102 On the body portion 31 of the metal plate 3, at this time, the body portion 31 of the metal plate 3 is gradually heated and is conducted upward to the extending portion 32, and is attached to the thermoelectric semiconductor 5 of the whole: two::: Immediately senses that the heat energy of the far side 3 of the high temperature has been accumulated and is conducted outward through the heat generating portion. At this time, when the heat generating portion 52 is attached to the water storage device 6 of the water heater, the water storage is heated. The liquid in the device 6 can form a hot water heating device. Secondly, since the collector of the present invention uses the first and second vacuum A sets 1 and 2 to form a vacuum chamber (ie, a vacuum chamber) (2 〇) which is spaced between the inner and outer layers, respectively, the double vacuum Heat storage mode, (4) The source of the source = the fruit is not easy to flow out, plus the blackened metal plate 3, the storage: == the thermal energy in the first and second vacuum chambers 10, 20 can be effectively transmitted High-performance thermal induction conduction to the thermoelectric semiconductor 5, coupled with high-power semiconductors, ie, cryogenic wafers = the purpose and efficacy of heat collection. To the rapid 隹 = = =!: 0 supply mode, you can use the exposure method or poly = 2 after the sun exposure method 'about reach Celsius left = ...' using the focus mode can reach Celsius (four). c lack of phase of the household, and the energy storage effect of the existing early layer vacuum collector still uses a double-layer vacuum heat collecting structure, except that the metal plate 3 is irradiated by the moon source to obtain high temperature, and enters The first -, - true... The thermal energy value of 20 is left inside and the outer circumference of the metal plate 3 is surrounded by temperature, which is not easy to be lost' plus a blackened metal plate.
^作用，讓本發明之集熱器的蓄能效果達到最佳化I 12611°2 恐，以猎由精良的蓄能結構，提供給熱電半導體5莽致 夠的熱傳效能，所以，本發明確實可充分發揮又 的使用功效。 利用 准以上所述者，僅為本發明之較佳實施例而已， ，以此㈣本發明實施之範圍’即大凡依本發明卜: 耗圍及發明說明内容所作之簡單 3 1 屬本發明專利涵蓋之範圍内。 “化與修飾，皆仍 【圖式簡單說明】 J 1是—剖視圖’說明本發明集熱器之製造方法的較 1土貫施例；及 v平乂 圖。圖2是該較佳實施例運用在1水裝置的一組合示意 1261102 【主要元件符號說明】 1 第一真空裝置 23 ， 周壁 10 第一真空室 24: 周壁 11 •周壁 3 … 金屬板 12 周壁 31 ^ 本體部 121 > 開口 32，， > 延伸部 1 3… •周壁 4… 。阻隔層 14… •周壁 4卜· •穿孔 2 * ♦第二真空裝置 5 * * •熱電半導體 20… •第二真空室 5L· * •蓄源面 21 * >周壁 52· * •發熱面 22… ，周壁 6… •儲水裝置 221 ，開口 100 » •能源 _ 10Acting to optimize the energy storage effect of the collector of the present invention I 12611 ° 2 fear, to provide a heat transfer performance to the thermoelectric semiconductor by a sophisticated energy storage structure, so the present invention It is true that it can be fully utilized. The use of the above-mentioned ones is only a preferred embodiment of the present invention, and the scope of the present invention is as follows: that is, the scope of the invention is as follows: the cost and the content of the invention are simple. Within the scope of coverage. "Chemical and Modifications, Still [Simplified Schematic Description] J 1 is a cross-sectional view" to illustrate a comparative example of the manufacturing method of the collector of the present invention; and v 乂 diagram. FIG. 2 is a preferred embodiment. A combination of 1 1 water device is used to indicate 1261102 [Main component symbol description] 1 First vacuum device 23, peripheral wall 10 First vacuum chamber 24: Peripheral wall 11 • Peripheral wall 3 ... Metal plate 12 Peripheral wall 31 ^ Body portion 121 > Opening 32 , > Extension 1 3... • Peripheral wall 4... Barrier layer 14... • Perimeter wall 4 b • Perforation 2 * ♦ Second vacuum device 5 * * • Thermoelectric semiconductor 20... • Second vacuum chamber 5L·* • Source surface 21 * > peripheral wall 52·* • heating surface 22..., peripheral wall 6... • water storage device 221, opening 100 » • Energy _ 10