TWI260629B - Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same - Google Patents

Abstract

A circuit for programming a microelectronic device is disclosed. The circuit is configured to provide a reversible bias across the microelectronic device to perform erase and write functions. One configuration of the programming circuit includes one or more inputs coupled to the programmable device and a complimentary metal-oxide semiconductor circuit coupled to the programmable device. This design allows for writing and erasing of the programmable cell using a low and high voltage input.

Description

1260629 V. INSTRUCTIONS INSTRUCTIONS (1) '~' -------- RELATED APPLICATIONS: This application is filed on Jan. 3, 2002, and the US Patent No. 60/345, 931, The continuation of the case of programmable metallization cell g = (PROGRAMMABLE CIRCUITRY FOR THE PROGRAMMABLE road METALLIZATION CELL). I. Field of the Invention The present invention relates to programmable microelectronic devices, and more particularly to a circuit for applying write and/or erase voltage. This circuit mutably programs the electronic enthalpy of the device by the energy supply/or energy polarity of the vertical supply device. 2 2. [Prior Art] Memory devices are often used in electronic systems and computers to store binary data. These memory devices can be classified into different types according to their characteristics, and each type has its own advantages and disadvantages. For example, random access memory (RAM) that can be seen in a personal computer is generally a volatile semiconductor memory (v〇lati u semiconductor memory). In other words, when the power is turned off or unplugged, the stored information is lost. Dynamic random access memory (Dynamic DRAM) must be refreshed every few millionths of a second (microsecond), that is, recharge - times to retain the stored data, so it has a high degree of volatilization Sex.

Page 5 1260629 V. Invention Description (2) Static random access memory (Statlc DRAM) can retain data, as long as the power supply is not cut off - the original input can be kept off once, the data will disappear . So in this class =. However, in electricity, only when the system is not powered off, there is a nature of the memory. These RAM devices account for a considerable amount of crystal, 'Jiebei, 'W like a car: expensive. In order to store the data, it will consume a considerable amount of clothes. It is known from the above that we need a more advanced memory device, using the source. With similar devices. In the personal computer, the storage device is like a magnetic disk, a hard disk and a magnetic tape, and the optical disk, CD-RW and DVD-RW are all ##义思; / is 'the memory device' Large volume 1 is subject to impact/vibration: the porting mechanism consumes a considerable amount of power. These negative “features make this type of memory device unsuitable for low-power portable applications such as laptops, palmtops, personal digital assistants (PDAs), etc. Small, low-power, frequently changeable storage data The rapid growth of portable computer systems, first-hand and handheld devices is part of the reason why low-power read/write semiconductor memory is gaining more and more attention and popularity. In addition, because such portable systems usually need to be turned off. Non-volatile storage devices are a good choice. Wood non-programmable read-only memory (PROM) is a suitable system for this type of system.

Page 6 1260629 ------- V. Description of the invention (3) Non-volatile semiconductor memory device. In the device of p_ (= ϊ / / / / / / / / ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( Program-only read device (EEPR0M). This kind of wearable program has a program-only read-only memory. EPROM is a kind of clothing, and it can be changed to ROM after the work is finished. , the external line of illumination. Therefore, this type of device is not suitable for the use of the -i defect clothing 1: EEPR 〇 M device is relatively easy to stylize, but it is also difficult to 俨 i 寺 寺 寺 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋It is quite sleepy 5 pairs, which is relatively large. In addition, the circuit containing ΕΕ_ must store: η-type high voltage. So the cost of each bit of biliary_ and other data is very high. εερ_ Although it is broken: There is data, but in the process of stylization: μ = a Xuan rate. For a battery-powered portable system, this power burden is considerable. < The main image is flash memory (FLASH) - The memory of the class is also quite high, and the process is quite complicated. Here, we need easy to manufacture, and resulting in improved qe memory device according to the present relatively expensive. In addition, we also need to be programmable circuitry of such devices. Page 7

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SUMMARY OF THE INVENTION This is a description of a modified microelectronic programmable circuit, a system of a program circuit, and a method of forming the same. More specifically, and including a programming circuit, the voltage is supplied to the programmable device.系统 Systems containing such circuit two and / = structures can replace traditional non-volatile and volatile notes. Next, some of the disadvantages of the present invention will be discussed in detail. Overall, the programmable device of the present invention is relatively easy to manufacture and is easy to achieve stylized. How to overcome the current programmable circuit of the disclosed programmable circuit is relatively inexpensive, and is also quite advantageous in various embodiments of the present invention. The programmable structure includes an ion V, (i〇n at least two electrodes ( When the first polarity is biased between the two electrodes, one or more, sub-characteristics of the structure are changed. In one embodiment of this embodiment, the first polarity is biased to an electrode. When it is between, it will change the resistance of the structure. In the other case, when the first polarity is applied between the two electrodes, the capacitance of the structure or other electronic characteristics will be changed. According to another aspect of the embodiment, we can reverse the amount of change in the programmable characteristic by applying a sufficient amount of the second bias, and the change in one or more electronic characteristics and the amount of change can be Detected, so we can get from the package

1260629

V. INSTRUCTIONS (5) The stored information is taken out from the circuit containing the structure. In accordance with the present invention, the programmable and/or erased rewritable circuit includes a plurality of voltage inputs and a plurality of switches between the voltage source and the ground and the voltage input. In the various cases of j f ~, the program circuit uses the first voltage (μ) and the second voltage (such as a negative voltage) to pen only / + animalize to erase the programmable device. In a particular case of the present embodiment, the circuit includes a circuit coupled to a voltage input and a programmable logic semiconductor (CMOS) circuit. Other non-sense circuits in this embodiment include passive loads and/or active loads. According to another embodiment of the present invention, a circuit for programming and/or: a presentation device includes a single write voltage input terminal, a plurality of J switches ' and a select switch (select switch) . A plurality of switches are connected between the voltage source and the ground and the write voltage input. The switch is connected between the write voltage input and the programmable device. Selecting the opening allows the special programmable structure within the array of structures to be selected: ¢6. ΛΑ m ^ <~two octaves According to another embodiment of the invention, the programmable device can be formed on the surface of a pedestal . In one case of this embodiment, the pedestal includes a circuit. In another case of the embodiment, the memory device is over the program circuit, and the wire between the program circuit and the memory is _ __

II

IJ

I. Page 9 1260629 V. INSTRUCTIONS (6) The pedestal is formed by a conductive wiring scheme in a programmable structure. [Embodiment] The present invention can be described by various functional elements. It is to be noted that the functional elements referred to herein can be implemented with any number of hardware or structuring elements that perform a particular function. For example, the present invention can employ various integrated components including different electronic devices, such as resistors, transistors, capacitors, diodes, and the like, and the components can be appropriately adjusted to achieve specific values. purpose. In addition, the present invention can be implemented using a variety of integrated circuit applications with an effective reversible bias. Those skilled in the art will be able to understand such broad applications through the description of the present invention and therefore will not be described in detail herein. It should also be noted that although the various components in the circuit shown have been joined or connected to the other 70 pieces in an appropriate manner, such connections and transfer points

The formula can also be connected by a direct connection between the components or its I or device located therebetween. T 八^ invention-like program circuit and package for programmable microelectronic devices are related to the system of the king circuit and its formation method. The program circuit and system towel disclosed in the invention shown in Fig. i and Fig. 2 Formed on the pedestal ... is a programmable microelectronic structure 1 〇〇 and 20 0, the buffer or barrier layer or region 155 selectively included in the ionic conductor 14. The 广广 100 and 200 comprise electrodes 120 and 130.

1260629

In general, the structure 100 and 200 function to change the electronic properties of the structure 100 when a bias voltage greater than the threshold voltage VT is applied between the electrodes 12A and 13(). . The critical voltage will be further explained below. For example, in accordance with an embodiment of the present invention, although a voltage V g ντ is applied between the electrodes 1 2 〇 and 1 3 ,, the conductive ions in the ionic conductor 14 开始 start to migrate. And at or near the opposite of the electrodes 12 〇 and 1 to form a region 160, an elecyodeposit, which is more conductive than most other regions of the ionic conductor. When a region 160 is formed, the impedance between the electrodes 12() and 丨3〇 is lowered, and other electronic characteristics may also be changed. In the absence of any insulating barrier, the threshold voltage used to grow the region M0 from one electrode to the other will significantly reduce the device impedance. The critical voltage is approximately equal to the system's redox potential (reducti〇n/oxidal: ic) ri potential, typically around a few hundred mV. The above insulating barriers will be described in detail below. If the polarity of the same voltage is reversed, the region 丨6〇 will dissolve back into the ionic conductor and the device will return to a high impedance or erased state. Structures 10 0 and 20 0 can be used to store information and can therefore be used on a memory circuit. For example, the structures and other programmable structures in the present invention can be used to replace memory devices such as DRAM, SRAM, PROM, EPROM, EEPR0M, and flash, or a combination thereof. In addition, the programmable structure disclosed in the present invention can be used in applications that require programming or changing some of the electronic characteristics of the circuit.

Page 11 V. Description of the Invention (8) According to various implementations of the present description, the readable memory, such as the volatility (v〇latUity) of the cell 00 or 20 0, can be changed by changing the writing process ( Write 〇perati ο η ) The amount of energy, such as time, current, electricity, heat or the like, is manipulated. In this case, the area 丨6〇 will be written in the 耘. The higher the amount of energy in the process of writing (the voltage exceeds the threshold voltage required for the incoming process), the more the region 16〇 grows, so the lower the volatility of the intentional body. Conversely, & the fruit provides a low energy phase of the cell, which results in a volatile memory that is relatively easy to erase. Therefore, the structures used to form volatile memory and non-volatile memory can be the same or phase y ': to form a volatile/easily erased memory ^^l^t^^(p〇rtable electrons devrceV^ The energy stored by itself' therefore consumes less power. The better the memory can be formed on the same pedestal and separated by pamuoned or isolated, allowing each to focus on volatility or non-volatility. The function of volatile memory. σ 77 can be: yuan = use of stylized technology to make volatile or; 4 hair = fine " Let β have the characteristics of the body, such as volatile or non-volatile, -^ memory The individual portions of the array are controlled by the energy. By changing back to Figures 1 and 2, the susceptor 110 can comprise, for example, the susceptor 110 can comprise a semiconductor, a conductor: ^ = substance. (semi insulat i Ve) or a substance such as an insulating material, or a rim. According to one embodiment of the present invention, the group 匕5 insulating material of the susceptor is 11 2 1260629

And an area 11 4 including a microelectronic device formed on the semiconductor pedestal. Microelectronic device 1 14 may include program circuitry for stylizing structure 1 / / and / bite 1 0 2 , as discussed in more detail below. The device layers 11 2 and 1 1 & can be separated by an additional layer 'say' to form a layer of an integrated circuit. Since such a programmable structure can be formed on an insulating substance or other substance, the programmable structure disclosed in the present invention is particularly suitable for applications that focus on the size of a pedestal such as a semiconductor material. In addition, the benefit of overwriting memory cells on a microelectronic device is that such a configuration allows for a higher data rate between the memory cell array and the microelectronic device. This is because a conductive path, 'conductive plugs' can be formed between the two layers 112 and 150. Electrodes 120 and 130 may also be used, for example, to form polysilicon or metal to form various suitable conductive materials. > Doped polysilicon material (doped electrode 120 according to one embodiment of the present invention) And 130 of which: =f solves the formation of a metal species in the ionic conductor 140. : Sufficiently biased (when V is applied between the electrodes, one of them is f and the other is rather inert and will not The operation is programmable, that is, the inert electrode. For example, the electrode is in the V body 2: it can be an anode, and contains a substance that is soluble in the ion, which is a negative, containing silver, and the electrode 130 In the process of writing, it can be used, including tungsten (tungsten), nickel (nickel), molybdenum.

Page 13 1260629

V. Description of invention (10) (/llybdenUm), platinum, metal telluride (metai sil1Clde) and other phases Second:: sex,. At least one of the electrodes containing a substance that is soluble in the ion guide 俨 = can help maintain the ionic conductor 14. The process of genus thus promotes other electronic property changes by using structure 100 and/or junction = to make region 16G fast and stable in ion conductor 14(). In addition, the use of an inert material as the other electrode', that is, the electrode serving as the cathode in the writing operation, can promote the electrolysis of any region 丨60 (electr〇diss〇luU〇n). And when the programmable device is subjected to sufficient voltage, it is restored to the erased state 〇~, the programmable structure can be used for various purposes, and is composed of various substances, for example, according to the required writing or erasing. Depending on the characteristics. Various programmable structures and structured materials have been filed in the United States on 1st of September 2nd, 1st, 1st, 1st, 1st, 1st, 1st, 1st, The contents of this application are hereby incorporated by reference in its entirety in its entirety. According to one embodiment of the invention, at least one of the electrodes 120 and 130 is made of a material suitable as an internal interconnect. For example, the electrode 130 can be part of an internal interconnect structure in a semiconductor integrated circuit. In one case of this embodiment, the electrode 丨3 形成 is formed

1260629 V. Inventive Note (11), the substance is practically insoluble in the substance contained in the ionic conductor 14〇. The internal connection and the material f as the electrode 13G are like a square ts (ts: nickel (m: 〇 b b den 、 、 、 、 、 metal metal metal metal metal metal metal metal metal metal metal metal metal metal metal metal metal metal metal ts ts ts ts ts ts ts ts ts ts ts ts ts ts ts ts ts ts ts ts The composition of the outsiders is 。, _ people you are privately enough to conduct ions (the substances of the ninth body 140 include polymer, glass and semi-conductive sputum temporarily. In production, ion conduction ri4n In one embodiment of the present invention, the ion conductor 140 may also contain a substance that has been dissolved and/or diffused. For example, the ion conductor 14G may be used as the ion-conducting material. Containing a dissolved metal in an aqueous solution of H ruthenium. According to an embodiment of the present invention, a sulfur-based compound glass containing a dissolved metal is contained, and solution 2: about fu, GexS^ includes silver, and · Between 1 and 0. 5. Other sulfur-based compound bodies 140 can be scooped with 5 Α and combinations of the above, or similar substances. In addition, the conductive ions penetrate the VV::1! ), can affect the silver-class = moblllty. For example, Like, 'to the genus' and halogen, halide, page 15, 1260629, invention (12) (hal ide), or hydrogen, etc. may be added to the conductor 140 to enhance ion mobility, Thereby increasing the speed at which the structure is erased/written. Furthermore, the ionic conductor 14 〇 may comprise a plurality of regions having different impedance values. For example, the ionic conductor 1 400 may comprise a first region adjacent to the oxidizable electrode. , which has a relatively low impedance, and a second region near the inertial electrode, which has a relatively south impedance. According to one embodiment of the invention 'at least a portion of the structure 1 〇0 is a guide in the insulating material 150 Formed in the hole (V ia ). There are several advantages to forming a part of the structure 1 〇0 in the via of the insulating material 150, wherein such a formation can make the structure quite small, It reaches the order of 10 nm. In addition, the insulating material 150 can isolate a variety of structures 1 〇 0 from other electronic components. The insulating material 1 50 includes the avoidance of structure 1 不必要 unwanted electrons / or ion diffusion. According to an embodiment of the invention, the substance 150 comprises silicon nitride, silicon oxynitride and polymers such as polyimide, poly-p-dimethylene (parylene) or a combination of the above. Contact 165 can be energized to one or more electrodes 1 2 0, 1 3 0 ' to facilitate the formation of electronic contacts on individual electrodes. Contact 165 can be formed using any conductive material, preferably a metal, an alloy, or a combination comprising aluminum, tungsten (tungs t en) or copper (c 〇 PPer).

1260629

Manipulate the programmable message. For example, during the writing process: : " can be used to store the closed state to "1" or the on state. k 0" or Cheng can be changed from "1" to "〇". This / 7 soil /, the device is erased over the mouth, as described in the US patent Zha Shenshi main wood number 1 0 / 2 6 8, 1 0 7, the structure can be 撼 ', Jia Ming mouth, 4. ^ ^ ^ Have multiple programmable states, and store information about multiple bits in a structure in the right. 71. In the writing process, FIG. 3 shows a programmable current structure, such as a current-voltage characteristic table of the structure 200. In the illustrated construction, the via diameter d is approximately 4 microns (micron) and the conductor 140 is approximately 3511111 thick and is comprised of Ge3Se7_Ag (close to A G Sa ). The electrode 13 3 is an inert electrode composed of nickel (n i c k e 1 ). The electrode 1 2 0 is composed of silver. The barrier layer 255 is the original nickel oxide. As shown in Fig. 3, when a voltage of more than 1 V is applied to the structure 20 〇 in the off state, the current starts to increase. However, when the writing process is performed, that is, when electrodeposits are generated, the impedance of the conductor 140 is greatly reduced to 200 Ω, as shown by the curve 3 2 0 of FIG. As described above, when the electrode 1 30 is connected to the negative end of a power supply. This is a conductive region formed near the electrode 1 30 as compared with the electrode 120, and grows toward the electrode 120. An effective threshold voltage, i.e., a voltage capable of growing a conductive region, and penetrating the barrier layer 255 to conduct the electrodes 120 and 130, is relatively high. In particular, the voltage V - VT must be applied to the structure 200 to make the electrons

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The barrier layer 255 composed of an insulating layer is penetrated to form a conductive region. The barrier layer 255 of the two portions of the conductor 导 is conducted through the barrier layer by penetration or leakage. Another embodiment of the month, the month of the month, if there is no insulating layer, the voltage required to initiate the writing process will be quite low. i 言县么. :: Between conductor 140 and electrode 120 or 13 ,, there is no insulation layer, ,, relationship. As described above, changing the relative volatility of the memory structure in the present invention can be utilized in the writing process by applying different energies to the structure. For example, a high current pulse of several hundred mA is applied to the time of construction of Figures 1 and 2, and the configuration is about a few hundred n s to form a relatively non-volatile memory cell. Alternatively, the same current can be applied to the same or similar structure. If the time is short, such as a few n s, a relatively volatile memory structure can be formed. In either case, the memory of the present invention can be programmed at a high speed, and even volatile memory is more non-volatile than conventional DRAM. For example, volatile memory operates at the same speed as DRAM, but only takes a few hours to update. The reading process reads the state of the memory cell, such as "〇" or "1" without significantly interfering with the original state, and can apply a forward or reverse bias, which is larger than the size of the electrodeposited material. The threshold voltage is low, such as the knot in Figure 3.

Page 18 1260629 V. Description of invention (15) The conformation requires 1 · 4V. Or, by a current below or equal to the minimum of the programmed current, the current will produce the highest on-resistance value. The read operation process with a current limit of 丨 is shown in Figure 3. In this case, the voltage will rise from 0 to 2 V ' and the current will rise from 0 to 0 · 2 V, and the current limit ' represents a low impedance (ohmic / linear voltage - current) conduction state. . Another method of reading that does not interfere with the state of the memory is to apply the pulse ^ time is quite short. The voltage will be higher than the threshold voltage required for electrochemical deposition to avoid the generation of a detectable Faraday current (Faradaic cuTreni fl〇w), which means that almost all current will run away from polarization/charging. The device does not form an electrodeposited material. The root temperature is used to compensate for the electrical state. The electrical structure at the end of the program will be outside the wiper, and the temperature will be less than 0 in the case of the compensated pinned temperature path. As is known in the case of the addition of the degree of compensation and unknown embodiments of the invention according to the invention S: (temperature changes to the programmable package contains a processable process in the reading process has a known erased state unknown structure is The erase device turns on the front state, and the two devices use the circuit to make the state of the programmable node, with the performance of the compensating devi setting of the programmable structure. The structure has a known 'simultaneous pair of programs with unknown state The structure is applied to the state of writing, then it is turned on first. If it is unknown, the voltage or current will be compared at a similar time, and the voltage generated by the structure or the electric ce) may gradually increase the unknown structure. System through. Another compared to the read stream

1260629 V. INSTRUCTIONS (16) Erasing can be biased to compress the size of the application 20 0 . Kims, (Ω). The writing between the wall layer or the step = 1 structure such as the structure 200 can be performed by applying a reverse bias in the writing process to the amount of bias applied and the electrode used to form the electrodeposit. Bigger, but the opposite polarity. According to one of the inventions. The eraser of the foot ^ (v^vt) is applied to the structure 222 in a period of time and is related to the energy applied during the writing process, generally less; ί...the structure 20 returns to the closed state, and the impedance value exceeds 100. The 10,000 ohm Ρ 可 结构 并不 并不 并不 并不 并不 并不 并不 并不 并不 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 导体 φ φ φ φ φ φ φ φ φ φ φ φ φ φ φ φ φ The penetrating barrier causes the barrier layer to collapse. The shouting is too long to control the operation in one of the separation structure plus the conductive material silver. The application pressure can be added from the parameters of the reverse bias electrode. The conductor is controlled by the reduced metal from the ion, and the amount of the conductive material in the excess gold is concentrated when the oxidative pressure is applied. For example, the potential is taken in the reduct ion solution. If the electrode is applied with a reverse bias to provide more space or to increase the genus, the usability can be achieved by applying a potential applied in the solution, and the voltage of the conductive substance exceeds the concentration of the substance. Originally, the metal ion. This bias can be effectively and appropriately micro-processed to bias the negative voltage over the 'can be used to remove the oxidation voltage from the electrode to the device. Automatic Control Page 20 1260629 细·' - 5, Invention Description (17) Conductive Substance. In various embodiments of the present invention, the threshold voltage of the programmable device can be utilized, for example, ", writing and erasing as described above The program controls it. The control threshold voltage adjusts the programmable device to match the read or write voltage desired by the user. In general, as described above, the threshold voltage and conductive material are in the ionic conductor and/or any The amount in the barrier layer, as well as other factors, is related. Figure 4 is not a part of the integrated circuit 4〇2, which contains a programmable structure 40 0 for providing additional electronic component isolation. According to the present invention In one embodiment, the structure 4〇〇 includes electrodes 42〇 and 43〇, the ion conductor 4 4 0 contacts 4 6 0, and the amorphous stone between the junction 4 6 〇 and the electrode 4 2 〇 Two n-junction diodes. Two-segmented structure can be programmed, and the high-density configuration can be used to provide memory circuit 宓; ~; storage, amount: in general, memory The maximum storage of the device is limited to the size and complexity of the decoder circuit (r〇w/C〇lumn dec〇der cir^u+itry). However, the programmable structure can be stored; Above the circuit, the structure 4G0 will not occupy/seat 2, and the entire semiconductor wafer area can be used in row/column decoding, V-column processing, and data management circuits. Μ Secret plant - (not shown) merits. Thus, using the programmable structure disclosed in the present invention, the existing semiconductor product can be regarded as an additional technology in the actual structure, and the function and capacity are added to the integrated East Road technology. Page 21 1260629 V. Description of the Invention (18) FIG. 5 illustrates a portion of a memory device in which a structure 〇〇 η η 接 junction diode 470 is located in a bit line of a memory circuit (b^ The line 510 is at the intersection of the word line and the word line 52〇. Another isolation mode shown in FIG. 6 is to use a transistor 61 between the electrodes and the contacts of the programmable structure, and the programmable structure is in the memory bit line 610 and the word line 6. 20 is handed over again. straight

Figure 7 shows an exemplary circuit 700 for varying the electronic characteristics of a microelectronic device such as the programmable device shown in Figures i, 2 and 4. In general, the path 700 can be used to provide a sufficient, reversible voltage drop across the programmable structure to perform the write and erase functions described above. The circuit 70 0 includes a first input 7〇2 coupled to the first region 704 of the programmable device 7〇6, a second input 710 coupled to the first switch 712 and the second switch 714, the voltage source 716 coupled to the switch 714, and grounded 718 is coupled to switch 712. In the present embodiment, the second region 7〇8 of the device 7〇6 is coupled to the first switch and the second switch. According to an exemplary case of the embodiment, the switch Ή2 and the switch 714 form a complementary MOS device. Wherein switch 714 is a p-channel transistor and switch 712 is an 11-channel (n-channel) semiconductor. The turn 72 of the CMOS device is coupled to the second region 708 of the programmable device 706. In this example, the input 71 is coupled to the gate of the channel transistor and the gate of the η transistor. The switches 712 and 714 form part of the CMOS device, which can be consumed by the read and write operations. Power

1260629 V. Description of the invention (19) is quite low, while making the circuit 70 0 easy to manufacture. In another case of this embodiment. The P-channel transistor 7 1 4 can be replaced by a passive load such as a resistor (polysilicon resistor) or an active load (such as a depletion mode MOS transistor). Similarly, as described above, the CMOS device can be formed in a pedestal, such as a pedestal, and the configurable device 706 can overlie the pedestal. In operation, when the programmable device 706 is in a non-write or erase state and has a low voltage, for example, a voltage of 〇V is applied to the input electrodes 7〇2 and 71〇' Region 7 〇 8 ) is positively biased compared to the soluble electrode (region 704 ). In this state, the write action will not occur. When there is a positive voltage, approximately a positive voltage close to Μ, near +V) is applied to inputs 702 and 710, the voltage in region 7〇8 will drop to approximately 0V. As long as the positive voltage at the input terminal 7〇2 is large enough to allow the voltage drop to exceed the threshold voltage, which is approximately 20 to 30 mV, the circuit 70 0 will perform the above-described write function to the device 7〇6. If device 7〇6 is to be erased, a low voltage of about 〇v can be applied to inputs 702 and 710 such that region 7〇8 of device 7〇6 phase 704 of device 70 6 is positively biased. Alternatively, voltages of opposite polarity can be applied to inputs 702 and 710 to achieve the write and erase functions described above. Figure 8 is a diagram showing a circuit 8 in another embodiment of the present invention, which is a programmable program. Circuit 8 is similar to circuit 7 except that circuit _ contains only a single input 802 and additionally includes a select input and switch 8 0 6 to initiate a read or write function of £*°

Page 23 1260629 V. INSTRUCTIONS (20) In operation of circuit 800, an appropriate bias voltage, such as a positive voltage of 1 to 0 (1 t0 5V - near +V) is applied to input 8〇4 to turn on switch 6 The function of writing or erasing can be performed. The switch 8 〇 β is in the illustration of the invention = MOS transistor in the embodiment. Once started, apply a high voltage, such as a positive voltage of 1 to 5V (1 to – near +ν) to the input to perform the write function. When a low voltage is applied, the voltage of 〇ν can be erased by inputting 8〇2. During the writing process, the impedance of the device 7〇6 will drop. This phenomenon can be used to limit the stylization effect, because the voltage at input 8〇2 will be pulled down as the stylization proceeds. Figure 9 shows another circuit 9 of the present invention. Circuit 9 is similar to circuit j except that the programmable structure 706 is opposite in direction to the input 8〇2. In this example, applying a low voltage to the input 8〇2 will cause a write operation' and applying a high voltage to the input 80 2 will cause an erase action. Figure 10 shows a 00 0 comprising a plurality of programmable devices 1 0 02 to 1 0 06. Circuit 1000 may form part of a memory array, such as a portion of a row of arrays. The circuit 丨00 0 is similar to the circuit 80 0 except that the power 1 1 0 0 0 includes a plurality of select inputs 丨0 08 to 1012, a plurality of programmable 'channels, and a plurality of select switches, such as MOS transistors 丨〇丨4 to "t 1 〇18. According to an embodiment of the present invention, a single programmable device can turn on a related selection switch to perform a read or write operation = σ by

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5. The description of the invention (21) is 2 = the illustration is given, "note that although in the program circuit, the ^ ^ ^ 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 举例 以 以 以 以 以 , , , , , However, the circuit used in the present invention may be additionally or in the form of a bipolar t irans is tor or similar element to form the switch in the figure. Those skilled in the art may It is to be understood that various modifications, changes, or enhancements may be made to the design and method of dressing and dressing for women's volleyball without departing from the spirit and scope of the patent application scope of the present invention.

Page 25 1260629 Brief Description of the Drawings [Flat Description] A further description of the present invention will be explained in the following detailed description and the scope of the patent application, and will be described with reference to the accompanying drawings Similar elements in the figures, wherein: Figures 1, 2 and 4 are cross-sectional illustrations of a programmable structure formed on a surface of a substrate in the present invention; Figure 3 is a current-voltage diagram used to illustrate the invention The current and voltage characteristics of the disclosed device; Figures 5 and 6 are part of a memory device in one embodiment of the present invention; and Figures 7 through 10 are circuit circuits disclosed herein. Those skilled in the art will appreciate that the elements of the figures are for the purpose of simplicity and clarity and are not necessarily shown in the actual scale. For example, the dimensions of some of the elements in the figures may be exaggerated to assist in understanding various embodiments of the invention. I 10 pedestal II 4 area 1 3 0, 4 3 0 electrode 1 5 0 insulating material 1 6 0 area element symbol description 1 0 0, 2 0 0, 4 0 0 structure 1 1 2 insulating material 1 2 0, 4 2 0 electrode 140, 440 ion conductor 155, 25 5 area 1 6 5 contact 402 integrated circuit

Page 26 1260629 Schematic description 4 6 0 contact 5 1 0 bit line 6 1 0 transistor 6 2 0 word line 70 2 first input 706 programmable device 710 second input 7 1 4 second switch 7 1 8 ground 80 0 circuit 804 select input 90 0 circuit

1 0 02, 1 0 04, 1 0 06 Reachable 1 008, 1010, 1012 Select 1014, 1016, 1018 MOS 4 7 0 Dipole 5 2 0 Word Line 6 1 5 Bit Line 7 0 0 Demonstration Circuit 704 First region 708 second region 7 1 2 first switch 7 16 voltage source 720 output 802 single input 806 switch 1 00 0 circuit device input transistor

Page 27

Claims (1)

1260629 4.2〇案号92100098_[η——6. The scope of application for patents is (月(more) 正: f丨1 · A program used to program a microelectronic record ti, 裒ΐ (micr 〇e 1 ectr ο nic memory device a circuit comprising: a first input coupled to a first region of the memory device; and a second input coupled to a first switch and a second switch, the first switch I coupled to a a voltage source (v ο 1 tages 〇urce ), and the second switch is in contact with a ground; wherein the circuit is configured to provide a first bias and a second bias to the memory device Wherein the polarity of the first bias is opposite to the polarity of the second bias. 2. The circuit of claim 1, wherein the first switch and the second switch form a CMOS device. 3. The circuit of claim 2, wherein an output of the CMOS device is coupled to a second region of the memory device. 4S&W0301TW-ΑΧΟΝ-Replacement page-042] 06.pt c Page 28 1260629 95. 4, 25 ____ Case No. 92100098 _ 月月日日 Revision 6. Circuit for applying patent range sub-characteristics, the circuit contains: Input (writeinput) is coupled to a first region of the microelectronic device; a select switch is coupled between the write input and the first region of the microelectronic device; a first switch coupled to the Writing a input to a voltage source; and a second switch engaging the write input and ground (gr 〇und ), wherein the first switch and the second switch are coupled to a second region of the microelectronic device, And wherein the circuit is configured to provide a first bias and a second bias to the microelectronic device, wherein the polarity of the first bias is opposite to the polarity of the second bias. 7. The circuit of claim 6 wherein the first switch and the second switch form a CMOS device. 8. The circuit of claim 7, wherein the selection switch comprises a MOS transistor. 9. The circuit of claim 6, wherein the microelectronic device comprises an ion conductor material selected from the group consisting of glass, semiconductor material, and chalcogenide. ) substances and polymers. 4S&W0301TW - ΑΧΟΝ - Replacement page -04 2106. ptc Page 29 1260629 95. 4.2;> Case No. 92100098_ Year Month Day Amendment VI, Patent Application Range 10. The circuit described in claim 6 Wherein the first region comprises a soluble electrode species. The circuit of claim 6, wherein the second region comprises an inert electrode material. The circuit of claim 6, wherein the first region comprises an inert electrode material. The circuit of claim 6, wherein the second region comprises a soluble electrode material. The circuit of claim 6, further comprising a plurality of microelectronic devices coupled to the first switch and the second switch. The circuit of claim 14 further comprising a plurality of select switches coupled to the write input. A circuit for programming a programmable structure, the circuit comprising: a write input | coupled to a first region of the structure; a CMOS transistor, the CMOS transistor An output coupled to the second region of the structure and the write input; 4S&W0301TW- ΑΧΟΝ-Replacement page-042106. ptc Page 30 1260629 95乂25 Case No. 92100098_ Year Month Day Amendment VI, Patent Application Scope Select transistor selects the write input and the programmable Between the structures, wherein the programmable structure comprises an ionic conductor and a conductive material distributed in the ionic conductor 7.1. 7. The circuit of claim 16 further comprising a plurality of programmable The structure is coupled to the output of the CMOS transistor. 1 8. The circuit of claim 16 further comprising a plurality of select transistors coupled to the write input. The circuit of claim 16 wherein the electro-optic system is a MOS transistor. 4S&W0 3 01TW - ΑΧΟΝ - Replacement page -04 2 丨 06 p t c Page 31