1260074 f H 15715twfl.doc/〇〇(5 95-4-19 九、發明說明： ' — " 【發明所屬之技術領域】 種疋有關於—種迴銲處理裝置，且特別是有關於 一祕式可調速度之迴銲處理裝置。 【先前技術】 <里衣直 的本^導體製程中，覆晶接合（脚chipbonding)型態 :、· '凡件以及採用表面黏著技術（SMn賴裝載板 h ιη…八之間，可藉由導電凸塊（bumP)及銲球（solder ^自^物，彼此電性連接。常見的導電凸塊例如是 =斯回/錯量之錫錯合金、低含錯量之錫錯合金以及 1二:所蝴無錯合金。此外，常見的輝球也是以 士士 _曰 '、主這些合金物質的熔點最高可達攝氏3〇〇度 工右，取低則為攝氏21〇度左右。因此，在迴鋒過程中， 必須透過自動化的溫度監控設備，來提高產品的良率。 、圖1繪示習知一種迴銲爐的内部示意圖，而圖2繪示 迴銲處理時溫度變化的曲線圖。在半導體封袭廠中，迴鮮 爐100是常見的製程設備之一，其内部區分為多數個加熱 間101 例如為區間1、區間2以及區間3·依此 類推。其中，每一個加熱區間101〜105具有可獨立調整溫 度參數的加熱源111〜115，以使每一個加熱區間1 q 1〜1 〇5 的溫度保持在一預定值，如圖2所示。此外，迴銲爐1〇Q 中還具有/傳動結構120，貫穿所有的加熱區間1〇1〜 105，並％固定速度傳送放置於輸送帶122上的半導體元件 預迴銲的封裝體（未繪示）。 1260074 157J5twfl.d〇c/〇〇6 95-4-j9 值得注意的是，習知迴 結構120以單一個速度來傳 僅有單一個傳動 度的目的。尤其是，每-個加^ ^法達到多段調整逮 必須符合圖2的溫度曲_ ^ S〜105的加熱時間 熱區間中的參數適當的調整，且不同加 加熱速度、冷卻時間以及冷已戶括升=迷土度、預烤時間、 的傳動結構120，是無法達 ^ :僅㈣—傳動逮度 【發明内容】 ]取么化的迴銲處理。 本發明的目的就是在楹 多段可調速度的傳_=^一，鲜處理裝置，其具有 本發明提出-種迴到最佳化的迴鲜處理。 件之迴銲製程，此迴鲜處=括半導體元 動結構以及一操控衣置包括一加熱室、多數個傳 分別位於加妖室:不二°熱室中具有多數個加熱源，其 於加熱室中内。此外，傳動結構配置 操控平台配置於加用以傳輸半導體元件。另外， 控制模組，其電性操控5亥操控平台具有一傳動速度 還I#—傳動結構之轉速，且操控平纟 4m控制模組’ 丁口 度。其中，每一傳動結、私卜生紅乜母一加熱源之溫 繞於二傳動齒輪上之包括至少二傳動窗輪以及環 鄰，用以承載半導㈣’且該些輸送帶之間依序相 配置於二傳動齒輪^ :了—傳動結構還包括-惰輪， ^间且支撐輸送帶。 I26〇〇74wfl,oc/006 _9 依照本發明的較佳實施例所述，上述之二傳動齒輪之 間的距離大致上等於相對應之加熱區間的寬度。 依照本發明的較佳實施例所述，上述之加熱源為熱板 式加熱器或熱風式加熱器。 依照本發明的較佳實施例所述，上述之迴銲處理裝置 更包括多數個溫度感測器，其對應配置於不同加熱區間 中，用以感測每一加熱源之溫度。 本發明因採用可獨立調整速度的傳動結構，其分別配 置於每一加熱區間中，特別是，傳動結構的速度能經由操 控平台調整其最佳參數值，藉以調整不同加熱區間所需之 加熱時間，進而達到最佳化的迴銲處理。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 圖3繪示本發明一較佳實施例之一種迴銲處理裝置的 不意圖’而圖4繪不圖3之半導體元件由加熱室之區間1 傳送到區間2的示意圖。 請先參考圖3，此迴銲處理裝置200主要包括一加熱 室210、多數個傳動結構221〜225以及一操控平台230。 其中，加熱室210例如以隔熱材質以及耐熱、耐高溫的防 火材質所形成的加熱空間，其内部的溫度可由獨立的電熱 裝置加以設定，包括加熱室210中不同加熱區間201〜205 的上昇溫度、預熱溫度、加熱溫度以及冷卻溫度寺爹數的 1260074 15715twfl.doc/006 95-4-19 設定，均能藉由獨立的加熱源211〜215得到最佳化的、、w产 控制。 '里又 在本實施例中，加熱室210中每一加熱區間2〇1〜 205，例如_ i、㈣2···依此類推，分別具有_個可獨 立調整溫度參數的加熱源211〜215。此加熱源211〜215 例如是熱板式加熱器或熱風式加熱器，並可透過熱對流的 方式，使每個加熱區間201〜205的溫度保持在一預定=， 如圖2所不。最佳情況下，加熱源的制熱範圍最高可達3⑻ 度左右，以使高含鉛量/低含鉛量的錫鉛凸塊22、無鉛凸 塊或低熔闕銲球U由不同的溫度設定而成為融炫狀，並 I、始、接合於半導體元件（例如晶圓）2Q絲迴銲的封裝體 上。 、 此外，在每-個加熱區間2()1〜2()5中還分別具有可獨 立調整速度的傳動結構221〜225，且每一個傳動結構221 〜225依序相鄰以形成帶狀的一傳動路徑，用以傳 體兀件20沿著傳動路徑移動，並經過每-個加熱區間201 :205。在本實施例中，每—傳動結構221〜225例如是由 -傳動齒輪242、244以及環繞於二傳動齒輪242、244上 之-條輸送帶246 (僅緣示—部份）所構成，而輸送帶施 之材質不限，但以对高温、抗變形的材料為宜。此外，二 傳動齒輪242、244之間的間距大致上等於每一加熱區間 201〜205的見度，且二傳動齒輪242、244之間還可具有 一個輔助惰輪248，用以支撐輸送帶246。當然，惰輪248 的功能可以其他輔助工具來取代，在此不再贅述。 1260074 15715twfl .doc/006 95-4-19 值得注意的是，輸送帶246由各別的傳動齒輪帶動 24^、244，其移動速度是可以獨立調整的，因此放置於輸 达f =6上的半導體元件20在每一加熱區間2〇1〜2〇5的 加熱日寸間也是獨立可調的，如此一來，每個加埶區間 即名幾台設置空間及成本。請參考圖4，當半元 :2:由S 1中的輸送帶246移動到區間2中的輸送帶 區間多動士速度非固定值。例如，當半導體元件20在 ^門2=時間小於在區㈤1的加熱時間時，可藉由提 ；!過移動速度，使半導_20快速 J z。有關半導體元件20左卷一你也广 那所需的加熱時間以及^^熱區間20卜 曲線圖，叫聽佳化的迴圖心之溫度設定 承上所述，有關每一加熱區間 2 及 二度範圍可藉由人機操作介面預先 :存於= ⑽〜熱區間2Q1〜2G5中的溫度感測器 川“u，以偵測加熱源211〜 的數值記齡餘平台23Q巾溫度變化 操控平台230配置於加埶室二控的目的。 α…、 〇之外，特別是操控平台230 具有個傳動速度控制模組232 構221〜225之轉速，用 、电〖生知&母一傳動結 需的加熱時間。此外，射母:力❻區間201〜205所 制模組234,其電性操=二= 具^ 从制母—加熱區間2G1〜205所需的加熱溫度。 9 1260收4,__ 95.4,9 綜上所述，本發明提出一種迴銲處理裝置，且特別是 一種具有多段可調速度之迴銲處理裝置。此迴銲處理裝置 包括一加熱室、多數個傳動結構以及一操控平台◦其中， 多個傳動結構配置於加熱室中不同的加熱區間内，且其傳 動速度是可獨立調整的，用以改變經過每一加熱區間所需 之加熱時間。基於上述，傳動結構的速度能經由操控平台 調整至最佳參數值，以符合不同加熱區間所需之加熱時 間，進而達到最佳化的迴銲處理。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1纟會示習知一種迴銲爐的内部示意圖。 圖2繪示迴銲處理時溫度變化的曲線圖。 圖3繪示本發明一較佳實施例之一種迴銲處理裝置的 示意圖。 圖4繪示圖3之半導體元件由加熱室之區間1傳送到 區間2的不意圖。 【主要元件符號說明】 10 ·•半導體元件 20 :半導體元件 22 :錫鉛凸塊 100 :迴銲爐 10 95-4-19 I26〇q74fLd〇c/〇〇6 101〜105 :加熱區間 111〜115 :加熱源 120 :傳動結構 122 :輸送帶 200 :迴銲處理裝置 201〜205 :加熱區間 210 :加熱室 211〜215 :加熱源 216〜220 :溫度感測器 221〜225 :傳動結構 230 :操控平台 232 :傳動速度控制模組 234 :溫度設定控制模組 242、244 :傳動齒輪 246 :輸送帶 248 :惰輪1260074 f H 15715twfl.doc/〇〇(5 95-4-19 IX, invention description: '- " [Technical field of invention] There is a kind of reflow processing device, and especially related to a secret Adjustable speed reflow processing device. [Prior Art] In the process of this conductor, the chip bonding (foot chip bonding) type: , · 'Family and surface adhesion technology (SMn Lai loading) Between the boards h ιη...8, they can be electrically connected to each other by conductive bumps (bumP) and solder balls. Common conductive bumps are, for example, tin-displaced alloys. Low-missing tin-alloy and 12: butterfly-free alloy. In addition, the common glory is also the 士_曰', the melting point of these alloy materials up to 3 degrees Celsius, right The low is about 21 degrees Celsius. Therefore, in the process of returning, the quality of the product must be improved through automated temperature monitoring equipment. Figure 1 shows the internal schematic diagram of a conventional reflow furnace, and Figure 2 A graph showing the temperature change during reflow processing. In the semiconductor encapsulation plant, The fresh furnace 100 is one of the common process equipments, and the interior thereof is divided into a plurality of heating chambers 101, for example, section 1, section 2, and section 3, and so on. Each of the heating sections 101 to 105 has an independently adjustable temperature parameter. The heating sources 111 to 115 are such that the temperature of each of the heating zones 1 q 1 to 1 〇 5 is maintained at a predetermined value, as shown in Fig. 2. In addition, the reflow furnace 1 〇 Q also has a / transmission structure 120, Throughout all the heating zones 1〇1 to 105, and at a fixed speed, the semiconductor component pre-reflowed package (not shown) placed on the conveyor belt 122 is transferred. 1260074 157J5twfl.d〇c/〇〇6 95-4 -j9 It is worth noting that the conventional structure 120 transmits only one single transmission at a single speed. In particular, each multi-step adjustment must meet the temperature curve of Figure 2. The parameters in the heating interval of S~105 are appropriately adjusted, and the heating rate, cooling time, and the cooling structure, the degree of the soil, the pre-bake time, and the transmission structure 120 are not able to reach ^: only (4) -Drive arrest [invention]] Reflow processing. The object of the present invention is to provide a multi-stage adjustable speed transmission method, which has the present invention, and returns to the optimized re-processing process. The fresh-keeping place includes a semiconductor element moving structure and a control device including a heating chamber, and a plurality of transmissions are respectively located in the demon room: the heating chamber has a plurality of heating sources, which are in the heating chamber. The structure configuration control platform is configured to be used for transmitting semiconductor components. In addition, the control module, its electrical control 5 Hai control platform has a transmission speed and I#-the speed of the transmission structure, and the control flat 4m control module ' Oral. Wherein, each of the transmission knots, the private heat source and the heat source of the heating source are wound around the two transmission gears including at least two transmission window wheels and the ring adjacent to carry the semi-conductive (four)' and the conveyor belts are sequentially arranged It is arranged on the two transmission gears. The transmission structure also includes an idler pulley and supports the conveyor belt. I26〇〇74wfl, oc/006 _9 According to a preferred embodiment of the invention, the distance between the two transmission gears is substantially equal to the width of the corresponding heating zone. According to a preferred embodiment of the invention, the heating source is a hot plate heater or a hot air heater. According to a preferred embodiment of the present invention, the reflow processing apparatus further includes a plurality of temperature sensors correspondingly disposed in different heating intervals for sensing the temperature of each of the heating sources. The invention adopts a transmission structure capable of independently adjusting the speed, and is respectively disposed in each heating section. In particular, the speed of the transmission structure can adjust the optimal parameter value thereof via the control platform, thereby adjusting the heating time required for different heating intervals. In order to achieve an optimized reflow process. The above and other objects, features and advantages of the present invention will become more <RTIgt; [Embodiment] FIG. 3 is a schematic view showing a reflow processing apparatus according to a preferred embodiment of the present invention, and the semiconductor element shown in FIG. 4 is not transferred from the section 1 of the heating chamber to the section 2. Referring first to FIG. 3, the reflow processing apparatus 200 mainly includes a heating chamber 210, a plurality of transmission structures 221 to 225, and a manipulation platform 230. The heating chamber 210 is, for example, a heating space formed by a heat insulating material and a heat-resistant and high-temperature resistant fireproof material, and the internal temperature thereof can be set by an independent electric heating device, including the rising temperature of the different heating sections 201 to 205 in the heating chamber 210. , preheating temperature, heating temperature and cooling temperature of the temple number of 1260074 15715twfl.doc / 006 95-4-19 settings, can be optimized by independent heating sources 211 ~ 215, production control. In the present embodiment, each of the heating zones 2〇1 to 205 in the heating chamber 210, for example, _i, (4) 2, etc., respectively, has _ heating sources 211 to 215 which can independently adjust temperature parameters. . The heat sources 211 to 215 are, for example, hot plate heaters or hot air heaters, and the temperature of each of the heating zones 201 to 205 is maintained at a predetermined = by means of heat convection, as shown in Fig. 2. In the best case, the heating source has a heating range of up to 3 (8) degrees, so that the high lead content/low lead content of the tin-lead bumps 22, the lead-free bumps or the low-melting solder balls U are set by different temperatures. It is fused, and is bonded to a package of 2Q wire reflow of a semiconductor component (for example, a wafer). Further, in each of the heating sections 2() 1 to 2 () 5, there are respectively transmission structures 221 to 225 which can independently adjust the speed, and each of the transmission structures 221 to 225 are sequentially adjacent to form a strip shape. A transmission path for the transfer element 20 to move along the transmission path and through each of the heating zones 201:205. In the present embodiment, each of the transmission structures 221 to 225 is composed of, for example, a transmission gear 242, 244 and a strip conveyor belt 246 (only the edge portion) surrounding the two transmission gears 242, 244, and The material to be applied to the conveyor belt is not limited, but it is suitable for materials with high temperature and deformation resistance. In addition, the spacing between the two transmission gears 242, 244 is substantially equal to the visibility of each of the heating sections 201 to 205, and an auxiliary idler 248 may be provided between the two transmission gears 242, 244 for supporting the conveyor belt 246. . Of course, the function of the idler 248 can be replaced by other auxiliary tools, and will not be described here. 1260074 15715twfl .doc/006 95-4-19 It is worth noting that the conveyor belt 246 is driven by the respective transmission gears 24^, 244, and its moving speed can be independently adjusted, so it is placed on the transmission f = 6. The semiconductor element 20 is also independently adjustable between the heating days of each heating section 2〇1 to 2〇5, so that each of the twisting sections is named several installation spaces and costs. Referring to Fig. 4, when the half element: 2: is moved by the conveyor belt 246 in S1 to the conveyor belt section in the section 2, the multi-speed is not fixed. For example, when the semiconductor element 20 is at a time when the gate 2 = time is less than the heating time in the region (five) 1, the half conduction _20 can be quickly Jz by raising the moving speed. Regarding the left side of the semiconductor component 20, the heating time required by you and the heat interval 20 are shown in the graph, which is called the temperature setting of the back of the image, and the heating interval 2 and 2 The range can be pre-existed by the man-machine interface: temperature sensor in the = (10) ~ thermal interval 2Q1 ~ 2G5 "u, to detect the value of the heating source 211~ 23Q towel temperature change control platform The 230 is configured for the purpose of the second control of the twisting chamber. In addition to α..., 〇, especially the control platform 230 has a speed of the transmission speed control module 232 221 to 225, and the electric power is used to generate The required heating time. In addition, the projectile: the module 234 made by the force range 201~205, its electrical operation = two = with the heating temperature required from the mother-heating zone 2G1~205. 9 1260 received 4 __ 95.4, 9 In summary, the present invention provides a reflow processing apparatus, and more particularly to a reflow processing apparatus having a plurality of stages of adjustable speed. The reflow processing apparatus includes a heating chamber, a plurality of transmission structures, and a a control platform, wherein a plurality of transmission structures are disposed in the heating chamber In different heating intervals, and the transmission speed is independently adjustable to change the heating time required to pass each heating zone. Based on the above, the speed of the transmission structure can be adjusted to the optimal parameter value via the control platform, Optimum reflow process is achieved in accordance with the heating time required for different heating zones. Although the invention has been disclosed in the preferred embodiments as above, it is not intended to limit the invention, and anyone skilled in the art does not In the spirit and scope of the present invention, the scope of protection of the present invention is defined by the scope of the appended claims. [FIG. 1] FIG. 2 is a schematic diagram showing a temperature change of a reflow process. FIG. 3 is a schematic view showing a reflow processing apparatus according to a preferred embodiment of the present invention. FIG. The component is transferred from the interval 1 of the heating chamber to the interval 2. [Main component symbol description] 10 • Semiconductor component 20: Semiconductor component 22: Tin-lead bump 100: Reflow 10 95-4-19 I26〇q74fLd〇c/〇〇6 101~105: Heating section 111~115: Heating source 120: Transmission structure 122: Conveyor belt 200: Reflow processing apparatus 201~205: Heating section 210: Heating Chambers 211 to 215: Heating sources 216 to 220: Temperature sensors 221 to 225: Transmission structure 230: Control platform 232: Transmission speed control module 234: Temperature setting control module 242, 244: Transmission gear 246: Conveyor belt 248 :Idler