KR101809177B1 - bonding apparatus and method for thermoelectric element - Google Patents

Abstract

The present invention relates to a thermoelectric element bonding apparatus and a method for bonding a thermoelectric material at a high speed by an instantaneous heating method when manufacturing a thermoelectric element or thermoelectric module. A main body part receives an element array substrate transferred through a transfer device and transfers it. A preheating part preheats the element array substrate transferred by the body part at a predetermined low temperature. The instantaneous heating part is maintained at a preset high temperature. So, it receives the array substrate preheated by the preheating part. Instantaneous heating is performed by increasing temperature to a predetermined instantaneous heating temperature. When a pressing part instantaneously heats in the instantaneous heating part, it presses the element array substrate to bond the thermoelectric element at a high speed.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a bonding apparatus and a thermoelectric element,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for joining thermoelectric elements, and more particularly, to a thermoelectric element joining apparatus and method for realizing rapid thermal joining of a thermoelectric material during instantaneous heating in manufacturing thermoelectric elements or thermoelectric modules.

A thermoelectric element including a thermoelectric conversion element has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are bonded between metal electrodes to form a P / N junction pair. When a temperature difference is applied to both ends of the P / N junction pair, power is generated by the seeback effect, so that the thermoelectric element can function as a power generation device. Further, the thermoelectric device may be used as a temperature control device by a peltier effect in which one of the P / N junction pair is cooled and the other is heated.

Such a thermoelectric element can be obtained by mechanically processing an ingot-type thermoelectric material manufactured by various monocrystalline or polycrystalline manufacturing methods into a device having a specific dimension, joining electrodes to a substrate such as ceramic or silicon nitride printed with a pattern, Thermoelectric materials (P-type, N-type). Each thermoelectric material is bonded to a corresponding electrode using a bonding material. At this time, the thermoelectric materials manufactured by the single crystal manufacturing method have a crystallographic unique wall interface. Therefore, when the thermoelectric elements are processed, the thermoelectric material is easily broken and the recovery rate is lowered. For this reason, the thermoelectric materials are undifferentiated (crushed and crushed) to a certain size in order to improve the mechanical properties and to remove the internal stress, and then hot press, hot plasma sintering and the like are also used.

Since the manufacturing process of the thermoelectric element is complicated and requires two bonding processes, such as bonding the electrode to the metal-plated ceramic substrate and bonding the thermoelectric material to the electrode again, the solder ) Is difficult to select. In addition, if precise dimensional control is not performed, a gap is formed between the thermoelectric material and the electrode, and bonding failure tends to occur.

Korean Patent No. 10-1062129 (registered on Aug. 29, 2011) discloses a method of manufacturing a thermoelectric module and a thermoelectric element, wherein a P-type thermoelectric material and an N-type thermoelectric material are alternately bonded between a pair of substrates A method of manufacturing a thermoelectric element, comprising: preparing a P-type thermoelectric-mixing powder and an N-type thermoelectric-mixing powder in which a thermoelectric material powder and a low-melting point metal powder are mixed at a predetermined ratio; Placing a support having a plurality of holes formed therein in a predetermined pattern on a first substrate; Injecting the P-type thermocomplex powder and the N-type thermocomposite powder into corresponding holes of the support, respectively; P-type and N-type thermoconductive powders injected into the holes; Separating the support from the first substrate; Placing a second substrate on the other end of the thermocompression powder so as to face the first substrate; Heat-treating the thermoelectric-powder mixture at a temperature lower than the melting point of the thermoelectric material to bond the thermoelectric-powder mixture to the first substrate and the second substrate. According to the disclosed technique, a mixed thermoelectric powder obtained by mixing an N-type or P-type thermoelectric material powder with a low melting point metal powder having a melting point lower than that of the N type or P-type thermoelectric material powder is injected into a support (e.g., a jig) By melting the melting point metal, it is possible to mold the P-type and N-type thermoelectric materials, respectively. At the same time, it is possible to automate the bonding process of the thermoelectric material to the corresponding substrate.

In Korean Patent No. 10-0721925 (registered on May 18, 2007), a dense and continuous conductive layer is formed between a thermoelectric element and an electrode when a low-temperature electrode is bonded to a thermoelectric module, and an electrode is connected to an external terminal using a conductive adhesive And a method of manufacturing a thermoelectric module capable of manufacturing a thermoelectric module having high practicality as a module for thermoelectric power generation and thermoelectric cooling by decreasing the electric resistance value of the interface. According to the disclosed technology, in a method of manufacturing a thermoelectric module, a dense and continuous conductive ohmic contact layer is formed between a thermoelectric element and an electrode when a thermoelectric module is bonded to a low temperature electrode, As shown in FIG.

In the conventional technology as described above, hot air or radiant heat is externally applied in a low-temperature hot air blowing method to bond the thermoelectric material to the thermoelectric material. In particular, thermoelectric elements such as a multilayer type (for example, In the case of the thermoelectric module for the thermoelectric module, many hot air or radiant heat is supplied to the outer portions of the p-type and n-type thermoelectric materials, and the deterioration (ie, thermal effect) And the bonding material is not completely melted inside. In addition, since the internal bonding material must be supplied with hot air or radiant heat for a long time in order to completely melt the bonding material, there is a disadvantage that the degree of damage of the thermoelectric material is increased.

Korean Patent No. 10-1062129 Korean Patent No. 10-0721925

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thermoelectric element bonding apparatus and method for realizing thermoelectric elements or thermoelectric modules by instantaneous heating at a high speed in order to solve the above- .

According to one aspect of the present invention, there is provided a means for solving the above problems, comprising: a main body for receiving and delivering a device array substrate transferred through a transfer device; A preheating unit formed at an inner front end of the main body to preheat the device array substrate transferred by the main body unit to a predetermined low temperature; And a heater for heating the wafer at a preset instant temperature or for instant heating the wafer at a predetermined instantaneous heating temperature, A heating unit; And a pressing portion formed inside the body portion and pressing the element array substrate to instantaneously bond the thermoelectric elements when instantly heated in the instantaneous heating portion.

In one embodiment, the main body portion sequentially transfers the element array substrate to the preheating portion, the instantaneous heating portion, and the pressing portion.

In one embodiment, the main body part is characterized by using an automatic charging / extracting device for the element array substrate when transferring the element array substrate.

In one embodiment, the main body part is characterized in that the time when the element array substrate is held in the preheating part is adjusted.

In one embodiment, the main body is provided with a programmable logic controller (PLC) and a position servo controller (PSC) for precise control of the top / bottom pressurizing function, the automatic charging / extracting function.

In one embodiment, the body portion is characterized by having a heating / cooling structure divided into three zones.

In one embodiment, the body portion is connected to a vacuum device and is configured to maintain the interior of the vacuum device in a vacuum state by a vacuum device.

In one embodiment, the main body is characterized in that the degree of vacuum of the inside is controlled to 10 ^-3 (Torr) by a vacuum device.

In one embodiment, the body portion is connected to the purging device to remove inert and active gases generated therein by the purging device, during or after bonding, flux residues.

In one embodiment, the preheating unit is formed at a lower portion or an upper portion of an inner front end of the main body, and preheats the element array substrate transferred by the main body at a lower portion or an upper portion.

In one embodiment, the preheating part is characterized by preheating the element array substrate transferred by the main body part at a temperature lower than the junction temperature (i.e., 100-500 ° C, which is pre-set).

In one embodiment, the instantaneous heating unit is formed at a position corresponding to a rear end of the preheating unit.

In one embodiment, the instantaneous heating portion is formed at the upper and lower portions of the inside of the main body portion, and is kept at a bonding temperature (for example, 200 to 1000 ° C) set at the same time as the upper and lower portions. (For example, 200 to 1000 占 폚) which is set at the same time as the upper and lower portions.

In one embodiment, the instantaneous heating unit is characterized in that the temperature is raised at a temperature raising rate of 200 deg. C / sec or more by using a surface contact type high temperature heater.

In one embodiment, the instantaneous heating section is characterized in that the heating cross-sectional area of the element array substrate is 100 ㅧ 100 (mm ² ) or more.

In one embodiment, the instantaneous heating section is characterized in that the surface temperature of the surface-contact type high-temperature heater is measured and the temperature is controlled so as to be always maintained at a predetermined high temperature or to be rapidly raised to the instant heating temperature.

In one embodiment, the instantaneous heating unit performs temperature control to cause a temperature difference of 200 ° C or more from the surface to the center on the basis of the leg.

In one embodiment, the pressing portion is formed on the upper portion of the instantaneous heating portion so that the upper portion of the instantaneous heating portion is lowered to the lower side of the instantaneous heating portion, and the upper portion is pressed when the element array substrate is instantaneously heated for a predetermined time .

In one embodiment, the thermoelectric device bonding apparatus further includes a cooling unit formed at an inner rear end of the main body unit and adapted to receive the element array substrate fast-bonded by the instantaneous heating unit and the pressing unit to perform a subsequent heat treatment or cooling .

In one embodiment, the thermoelectric-component-joining apparatus further includes a monitoring unit for performing a brazed joint interface confirmation for checking the bonding state of the thermoelectric elements, and for monitoring and recording the internal temperature of the main body unit.

In one embodiment, the main body is provided with a transparent window so that interface observation for confirming the state of device bonding can be performed.

In one embodiment, the thermoelectric device bonding apparatus further includes a photographing unit for photographing the inside of the main body unit and recording the image of the inside of the main body unit as an image.

According to another aspect of the present invention, there is provided a means for solving the above-mentioned problems, comprising: supplying and receiving an element array substrate transferred by a main body through a transfer device; Preheating the element array substrate to which the preheating section is transferred by the main body section to a predetermined low temperature; Heating the instantaneous heating unit at a preset high temperature, receiving the device array substrate preheated by the preheating unit, heating it to a predetermined high temperature, or raising the temperature to a predetermined instant heating temperature, and instantly heating the instantaneous heating unit; And pressing the element array substrate to rapidly bond the thermoelectric elements when the pressing portion instantaneously heats in the instantaneous heating portion.

As the effects of the present invention, it is possible to provide a thermoelectric-element-joining apparatus and method that can realize a high-speed joining of a thermoelectric material by instant heating when a thermoelectric element or a thermoelectric module is manufactured, In addition, it is possible to reduce the deterioration (i.e., thermal effect) of the thermoelectric element and the thermoelectric module for the middle temperature to a minimum, thereby preventing damage to the p-type and n-type thermoelectric materials due to deterioration. It is possible to melt only the bonding material both inside and outside without giving.

1 and 2 are views illustrating a thermoelectric device bonding apparatus according to an embodiment of the present invention.
3 is a view for explaining a thermoelectric device bonding method according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. However, the description of the present invention is merely an example for structural or functional explanation, and the scope of the present invention should not be construed as being limited by the embodiments described in the text. That is, the embodiments are to be construed as being variously embodied and having various forms, so that the scope of the present invention should be understood to include equivalents capable of realizing technical ideas. Also, the purpose or effect of the present invention should not be construed as limiting the scope of the present invention, since it does not mean that a specific embodiment should include all or only such effect.

The meaning of the terms described in the present invention should be understood as follows.

The terms "first "," second ", and the like are intended to distinguish one element from another, and the scope of the right should not be limited by these terms. For example, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component. It is to be understood that when an element is referred to as being "connected" to another element, it may be directly connected to the other element, but there may be other elements in between. On the other hand, when an element is referred to as being "directly connected" to another element, it should be understood that there are no other elements in between. On the other hand, other expressions that describe the relationship between components, such as "between" and "between" or "neighboring to" and "directly adjacent to" should be interpreted as well.

It should be understood that the singular " include "or" have "are to be construed as including a stated feature, number, step, operation, component, It is to be understood that the combination is intended to specify that it does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

All terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. Commonly used predefined terms should be interpreted to be consistent with the meanings in the context of the related art and can not be interpreted as having ideal or overly formal meaning unless explicitly defined in the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A thermoelectric-device bonding apparatus and method according to embodiments of the present invention will now be described in detail with reference to the drawings.

1 and 2 are views illustrating a thermoelectric device bonding apparatus according to an embodiment of the present invention.

1 and 2, the thermoelectric module 100 includes a main body 110, a preheating unit 120, an instantaneous heating unit 130, and a pressing unit 140.

The main body 110 is provided with a preheating unit 120, an instantaneous heating unit 130 and a pressing unit 140. The main body 110 is supplied with the device array substrate transferred through the transfer device, ), The instantaneous heating unit 130 and the pressing unit 140 (or the cooling unit 150). Here, the element array substrate is in a state in which a bonding material is applied to the upper and lower sides of the thermoelectric element. The bonding material may be a metal or paste such as an Ag system or an Al system and may contain a flux for preventing oxidation. It can be used as a bonding material.

In one embodiment, the main body 110 is a main body of bonding equipment applied to an automation process. As shown in Fig. 2, the main body 110 is provided on the charging side of the device array substrate for vacuum formation and charging / And an exit door on the extraction side of the device array substrate. The device may further include a module sliding device on the loading side of the device array substrate for transferring the device array substrate, And a module takeout device may be provided.

In one embodiment, the body portion 110 may be configured to transfer the device array substrate (s) therein by using an automatic loading / unloading device (e.g., a robotic arm) of the device array substrate for association with a subsequent process (I.e., transfer), the positional change of the device array substrate can be maintained within 10 (um).

In one embodiment, the main body 110 can protect the thermoelectric leg by the surface heating method of the thermoelectric element by adjusting the time during which the element array substrate is held inside (i.e., the preheating part 120) .

In one embodiment, the body 110 includes a programmable logic controller (PLC) interface and a PSC interface for automated precision control, such as top / bottom pressure regulating functions, automatic charging / position servo controller.

In one embodiment, the body portion 110 is a heat sealed body (HSB) system with an inert gas control (IGC) applied to prevent oxidation and an experimental atmosphere, i.e., a 3-zone heating and cooling structure structure. In other words, the main body 110 can be divided into one section of the preheating section 120, one section of the instantaneous heating section 130 and the pressing section 140, and one section of the cooling section 150 have.

In one embodiment, the body portion 110 may be connected to a vacuum device to maintain the interior in a vacuum state by means of a vacuum device.

In one embodiment, the body 110 can be controlled to a vacuum degree of 10 ^-3 (Torr) by means of a vacuum device and is also connected to a purging device, The P / N leg, which is a thermoelectric material for maintaining the thermoelectric performance by the internal atmosphere control, can be removed by removing the inert gas and the active gas such as Ar, N _2, etc., and the flux residues during or after the bonding. , Electrodes, bonding materials, and the like can be protected.

The preheating unit 120 is formed at an inner front end of the main body 110 to preheat the element array substrate transferred by the main body 110 to a predetermined low temperature.

In one embodiment, the preheating section 120 is a heater, which is formed at the lower (or upper) portion of the inner front end of the body portion 110 and is carried by the body portion 110 at the lower (or upper) The device array substrate can be preheated.

In one embodiment, the preheating section 120 may form a preheating zone as shown in Fig.

In one embodiment, the preheating section 120 is configured to heat the element array substrate transferred by the body section 110 to a wide range at a predetermined low temperature (for example, a temperature lower than the junction temperature (that is, 100-500 ° C.), thereby minimizing thermal shock due to instantaneous heating in the instantaneous heating unit 130.

The instantaneous heating unit 130 is formed at the interior of the main body 110 (i.e., at a position corresponding to the rear end of the preheating unit 120) The device array substrate is received by the main body 110, and the device array substrate is heated at a predetermined high temperature, or the device array substrate is instantaneously heated by raising the temperature to a predetermined instantaneous heating temperature.

The instantaneous heating unit 130 may be formed at the upper portion and the lower portion in the interior of the body 110 (i.e., the position corresponding to the rear end of the preheating unit 120), that is, The instantaneous heating unit 130 (hereinafter referred to as an 'instantaneous heating unit 130' for the sake of brevity) and the instantaneous heating unit 130 (hereinafter referred to as the 'instantaneous heating unit 130' ≪ / RTI >

In an embodiment, the instantaneous heating unit 130 is configured such that the phase-transition heating unit 130 and the instantaneous heating unit 130 are simultaneously set at a predetermined high temperature (that is, Temperature heating unit 130 and the instantaneous heating unit 130 at the time of thermoelectric device bonding or by heating the device array substrate at a predetermined high temperature, (For example, 1000 ° C or higher) simultaneously.

In one embodiment, the instantaneous heating section 130 can make the maximum value of the instantaneous heating temperature 1000 degrees Celsius or more, so that bonding of the thermoelectric elements using various types of high temperature bonding materials can be made without difficulty.

In one embodiment, the instantaneous heating unit 130 can raise the temperature at a temperature raising rate of 200 deg. C / sec or more by using a surface-contact type high-temperature heater, so that instant heating can be performed without difficulty so that only the bonding material can be melted.

In one embodiment, the instantaneous heating section 130 makes the heating cross-sectional area of the element array substrate to be instantaneously heated to 100 × 100 (mm ² ) or more, so that the actual heating condition applied to the element array substrate to which the bonding material is applied So that there is no heat loss.

In one embodiment, the instantaneous heating unit 130 measures the surface temperature of the surface-contact type high-temperature heater so that it is always maintained at a predetermined high temperature (that is, a predetermined bonding temperature (for example, 200 to 1000 ° C) , And the temperature can be controlled so that the temperature is raised to the instantaneous heating temperature (for example, 1000 ° C or more), and thus the high-temperature bonding condition can be precisely controlled.

In one embodiment, the instantaneous heating unit 130 may perform temperature control to cause a temperature difference of 200 degrees or more from the surface to the center on the basis of the leg, in order to protect the components of the thermoelectric element.

The pressing portion 140 is formed in the interior of the main body 110 (i.e., at a position corresponding to the rear end of the preheating portion 120) to momentarily heat the element array substrate in the instant heating portion 130, Thereby bonding thermoelectric elements at a high speed.

In one embodiment, the pressing portion 140 is an apparatus such as a press or the like which presses with a hydraulic cylinder or the like, and can be formed with an upper press and a lower press. The upper press is movable up and down, The lower press is fixedly installed, and the instantaneous heating part 130 is fixedly formed on the upper surface. At this time, the device array substrate is placed on the upper surface of the instantaneous heating portion 130 at the time of high-speed bonding.

The pressing unit 140 moves the upper press to the lower press side so that the phase instantaneous heating unit 130 is lowered to the instantaneous heating unit 130 side so that the phase instantaneous heating unit 130, The device array substrate can be instantaneously heated for a predetermined time (for example, 0.5 to 2.5 seconds) and pressurized at an upper portion between the heating portions 130 so that the device array substrate can be precisely bonded at a high speed without shaking do.

The thermoelectric-element-joining apparatus 100 having the above-described configuration can be realized as a multi-layer type (for example, a segment-type module or the like) by realizing a thermoelectric material or a thermoelectric- In addition, it is possible to reduce the deterioration (i.e., thermal effect) of the thermoelectric element and the thermoelectric module for the middle temperature to a minimum, thereby preventing damage to the p-type and n-type thermoelectric materials due to deterioration. Only the bonding material can be completely melted both inside and outside without giving.

The thermoelectric element bonding apparatus 100 having the above-described configuration may be provided with a pressure gauge (see Fig. 2) for measuring the pressure to be pressurized by the presser 140, and the pressure measured by the pressure gauge The pressurizing unit 140 may be controlled to adjust the pressurizing pressure.

The thermoelectric-component-joining apparatus 100 having the above-described configuration transfers heat from the outside of the thermoelectric element at the time of heat transfer. At this time, heat can be transmitted in the order of the ceramic substrate, the electrode, the bonding material and the thermoelectric material, High-speed bonding can minimize damage to the thermoelectric material inside the thermoelectric element. Thus, the thermoelectric-component-joining apparatus 100 having the above-described configuration can minimize the deterioration of the thermoelectric material at the time of manufacturing the thermoelectric device, thereby improving the reliability of the thermoelectric device performance due to the maintenance of the high-performance thermoelectric material.

The thermoelectric element bonding apparatus 100 having the above-described configuration may further include a cooling unit 150.

The cooling unit 150 is formed at the inner rear end of the main body 110 (i.e., at a position corresponding to the rear end of the instantaneous heating unit 130) and is rotated by the instantaneous heating unit 130 and the pressing unit 140 The bonded element array substrate is received by the main body 110 and subjected to subsequent heat treatment or cooling.

In one embodiment, the cooling portion 150 may form a cooling band as shown in Fig.

The thermoelectric element bonding apparatus 100 having the above-described configuration may further include a monitoring unit 160.

The monitoring unit 160 performs a brazing bonding interface check to check the bonding state of the thermoelectric elements and monitors and records the internal temperature of the body 110. [

The thermoelectric element bonding apparatus 100 having the above-described configuration is provided with a transparent window in the main body 110 to enable interface observation for confirming the state of device bonding, and further, And a photographing unit (not shown in the drawings for the sake of explanation).

3 is a view for explaining a thermoelectric device bonding method according to an embodiment of the present invention.

3, in the main body 110 in which the preheating unit 120, the instantaneous heating unit 130, and the pressing unit 140 (or the cooling unit 150) are installed, (S201). ≪ / RTI >

When the device array substrate is supplied in step S201, the device array substrate transferred through the transfer device is automatically transferred to the preheating unit 120 ).

When the element array substrate is supplied in the above-described step S201, the main body 110 maintains the inside thereof in a vacuum state by the connected vacuum device, and at the same time, the Ar, N2, and the like, and active gases, flux residues during or after bonding.

When the element array substrate is received in the above-described step S201, the preheating unit 120, the instantaneous heating unit 130, and the pressing unit 140 (or the cooling unit 150) At this time, in the preheating unit 120 formed at the inner front end of the main body 110, the device array substrate transferred by the main body 110 is preheated at a predetermined low temperature (S202).

In the preheating of the element array substrate in the above-described step S202, the preheating unit 120 preheats the element array substrate transferred from the lower portion (or the upper portion) by the body portion 110. At this time, (For example, 300 degrees) to pre-heat the device array substrate.

In the instant heating section 130 formed in the interior of the main body 110 (i.e., the position corresponding to the rear end of the preheating section 120) after the element array substrate is preheated in the above-described step S202, When the device array substrate preheated by the preheating unit 120 is received by the main body 110, it is heated to a preset high temperature, or is heated at a predetermined instantaneous heating temperature And the device array substrate is heated by raising the temperature (S203).

The instantaneous heating unit (not shown) formed at the upper portion and the lower portion, respectively, in the interior of the main body 110 (i.e., the position corresponding to the rear end of the preheating unit 120) (For example, 200 to 1000 占 폚)) at the time of thermoelectric element bonding at the same time as the upper and lower heating temperatures (for example, 1000 DEG C or higher) to heat the device array substrate.

In the above-described step S203, the instantaneous heating unit 130 measures the surface temperature of the surface-contact type high-temperature heater and measures the surface temperature at a preset high temperature (that is, a pre-set bonding temperature To 1000 占 폚)), and to raise the temperature to an instantaneous heating temperature (for example, 1000 占 폚 or more).

In the above-described step S203, the instantaneous heating unit 130 may perform temperature control to cause a temperature difference of 200 degrees or more from the surface to the center on the basis of the leg in heating the instantaneous heating temperature.

In the pressing unit 140 formed in the interior of the main body 110 (i.e., the position corresponding to the rear end of the preheating unit 120) while heating the temperature to the instantaneous heating temperature in the above-described step S203, The substrate is pressed to bond the thermoelectric elements at a high speed (S204).

The pressing portion 140 (i.e., the upper press) fixing the phase-change heating portion 130 to the lower surface of the thermoelectric element at the above-described step S204 presses the instantaneous heating portion 130 (For example, a lower press) side, which is fixedly installed on the upper surface of the element mounting substrate 130, between the upper and lower intermittent heating units 130 and 130, 0.5 to 2.5 seconds), the pressing portion 140 (i.e., the upper press) can press the element array substrate upward.

In the cooling unit 150 formed at the inner rear end of the main body 110 (i.e., the position corresponding to the rear end of the instantaneous heating unit 130) after the thermoelectric element is fast-bonded at the above-described step S204, The element array substrate which is fast bonded by the heating unit 130 and the pressing unit 140 is received by the main body 110 and is subjected to subsequent heat treatment or cooling (S205).

As described above, the embodiment of the present invention is not limited to the above-described apparatus and / or method, but may be implemented by a program for realizing functions corresponding to the configuration of the embodiment of the present invention, And the present invention can be easily implemented by those skilled in the art from the description of the embodiments described above. While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

100: Thermoelectric device bonding device
110:
120:
130: Instantaneous heating unit
140:
150: Cooling section
160: Monitoring section

Claims (5)

A main body for receiving and delivering the device array substrate transferred through the transfer device; A preheating unit formed at an inner front end of the main body to preheat the device array substrate transferred by the main body unit to a predetermined low temperature; And a heater for heating the wafer at a preset instant temperature or for instant heating the wafer at a predetermined instantaneous heating temperature, A heating unit; And a pressing portion formed inside the main body to press the element array substrate to instantaneously bond the thermoelectric elements when instantly heated by the instantaneous heating portion;
And a pressure measuring unit for measuring a pressure to be pressurized by the pressurizing unit, the pressurizing unit being controlled according to the pressure measured by the pressure measuring unit;
The instantaneous heating unit includes a phase instantaneous heating unit formed at the upper part and a instantaneous heating unit formed at the lower part. The instantaneous heating unit and the instantaneous heating unit are maintained at a predetermined bonding temperature at the same time, Wherein the instantaneous heating portion and the instantaneous heating portion are simultaneously heated to a predetermined instantaneous heating temperature at the time of device bonding, and instantaneous heating is performed.
The apparatus according to claim 1,
Wherein the thermoelectric device is connected to a vacuum device and is kept in a vacuum state by a vacuum device.
delete The apparatus of claim 1, wherein the pre-
Wherein the device array substrate is formed at a lower portion or an upper portion of an inner front end of the main body portion, and preheats the element array substrate transferred by the main body portion at a lower portion or an upper portion.
Receiving and delivering the device array substrate transferred by the main body through the transfer device; Preheating the element array substrate to which the preheating section is transferred by the main body section to a predetermined low temperature; Heating the instantaneous heating unit at a preset high temperature, receiving the device array substrate preheated by the preheating unit, heating it to a predetermined high temperature, or raising the temperature to a predetermined instant heating temperature, and instantly heating the instantaneous heating unit; And pressing the element array substrate to rapidly bond the thermoelectric elements when the pressing portion instantaneously heats in the instantaneous heating portion;
The pressure measuring unit measures a pressure to be pressurized by the pressing unit and controls the pressing unit in accordance with the pressure measured by the pressure measuring unit;
The instantaneous heating part and the instantaneous heating part are simultaneously maintained at a predetermined bonding temperature and then heated to a preset high temperature or the thermoelectric element Wherein the instantaneous heating portion and the instantaneous heating portion are simultaneously heated to a predetermined instantaneous heating temperature at the time of bonding to instantaneously heat the instantaneous heating portion and the instantaneous heating portion.

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