1258233 九、發明說明： 【發明所屬技術領域】 本發明係有關於一種陶瓷基板型LED封裝方法及其結構，特 別有關於陶瓷基板型LED的封裝方法及其結構。 【先前技術】 LED(light emitting diode，發光二極體）自發明以來，便逐 漸的被應用至各個領域，至今已在日常生活中扮演相當重要的角 色。在過去因為LED的亮度不足，所以大多用在指示訊號燈上。 而隨著UD技術的進步與晶片製造技術的進步，㈣的用途也 的多樣化。 ,而隨著LED党度的增加，其熱度也跟著增加，因此為了讓高 功率LED的晶片完全發揮其發光效能，LE：D封裝技術的散熱功能盥 發光效率便變得相當的重要。尤其對於24 mil以上的晶片來說'' LED封衣技術的散熱能力便成為封裝是否能成功的重要因素。而 LED之封裝方式分成許多種類，陶瓷基板型為其中相當普遍的一 種。 如圖1A所示，陶瓷基板型LE1D係將LED 100設置於陶瓷基板 104上以加強LED的散熱作用。在此實施例中，陶瓷基板具有 一凹陷105 ’而LED 100係設置於此凹陷1〇5中。 此外，傳統陶瓷基板型之LED的封裝方式，大多是利用還氧 樹脂(Epoxy Resin)與金屬粉末（銀）的混和物（大約2 ·· 3)，作 為晶片與電極層間的接著劑，這類的接著劑是利用還氧樹脂高溫 硬化的特性來固定晶片，並藉由所加入的銀粉，以達到導電與導 熱的目的。但這類型的LED封裝方式並不適用於高流明（High、’ luminance)之傳統陶瓷基板型的LED封裝。因為這類之接著劑並 非是良好的熱及電的導體，無法有效的將晶片所產生的熱導出。 一傳統陶瓷基板型結構形式之LED封裝方式其中之一如圖1B 示，係將晶片101利用接著劑102黏附在電極層1〇3上。接著 102大多是還氧樹脂(Epoxy Resin)與金屬粉末（一般來說是銀Θ) 1258233 的混和物（其比例it常為2 : 3)。這類的接著劑是利 植來固定⑼’並齡所加人的銀粉翻導電At 接者劑非是良好的熱導體’無法有效的將晶片所產 ，的熱導*。而且，接著關2因材制性的問題，'片所f 與電極層103有較大的距離，且接著劑1〇 曰ζ片 =固==’無法忍受較大的推力與拉力率 .透明，亦Ξ成以=低。而且’因為接著劑102通常為非 =子，5問題’亦有業界人士採用 裝方式或疋兩溫合金共溶（Flux Eute⑽ μ f投貧的設備金額相當高昂且散_果亦；全3 ί仏上的銲塾層與金屬鍵層達ί 需要—種新穎的⑽方法來解決上述問題。 、去，明提出了一種新賴的陶竟基板型led封裝方 k二^ =ΪΓί子材料以及合金鑛層，在低溫的條件下有效 封裝㈤良好的散熱能力’以形成具有高散熱效果的_ ‘ ΐί:率t金層;在高反射率合金層上二面的! 平=包-=㈤ 於凹陷處。而遮討躲且將晶片固定 鎳、錫組成之群組中至少2：狀且同反射率合金層係自金、銀、 6 面固BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate type LED package method and structure thereof, and in particular to a ceramic substrate type LED package method and structure thereof. [Prior Art] Since the invention of LEDs (light emitting diodes), they have been gradually applied to various fields and have played a very important role in daily life. In the past, LEDs were mostly used on indicator lights because of the insufficient brightness of LEDs. With the advancement of UD technology and the advancement of wafer manufacturing technology, the use of (4) is also diversified. With the increase of the LED party, the heat is also increasing. Therefore, in order to make the high-power LED chip fully realize its luminous efficiency, the heat dissipation function of the LE:D packaging technology 发光 the luminous efficiency becomes quite important. Especially for wafers above 24 mils, the heat dissipation capability of the LED encapsulation technology is an important factor in the success of the package. The LED packaging method is divided into many types, and the ceramic substrate type is quite popular among them. As shown in Fig. 1A, a ceramic substrate type LE1D is provided with an LED 100 on a ceramic substrate 104 to enhance heat dissipation of the LED. In this embodiment, the ceramic substrate has a recess 105' and the LED 100 is disposed in the recess 1〇5. In addition, the packaging method of the conventional ceramic substrate type LED is mostly a mixture of an epoxy resin (Epoxy Resin) and a metal powder (silver) (about 2··3) as an adhesive between the wafer and the electrode layer. The adhesive is used to fix the wafer by the high temperature hardening property of the oxidizing resin, and the silver powder is added to achieve the purpose of conduction and heat conduction. However, this type of LED package is not suitable for high-luminous (high-bright) conventional ceramic substrate type LED packages. Because such adhesives are not good thermal and electrical conductors, the heat generated by the wafer cannot be effectively derived. One of the LED packaging methods of a conventional ceramic substrate type structure is shown in FIG. 1B, in which the wafer 101 is adhered to the electrode layer 1〇3 by means of an adhesive 102. Next, 102 is mostly a mixture of Epoxy Resin and metal powder (generally silver iridium) 1258233 (the ratio it is often 2:3). This type of adhesive is used to fix (9)' silver powder turned on. At the age of the addition, the conductive At connector is not a good thermal conductor, and the thermal conductivity* of the wafer cannot be effectively produced. Moreover, after closing the problem of material properties, the film has a large distance from the electrode layer 103, and the adhesive 1 = = solid == 'can not tolerate a large thrust and pull rate. Transparent It is also reduced to = low. And 'because the adhesive 102 is usually non-sub, 5 problem' is also used by the industry to install or bismuth alloy (Flux Eute (10) μ f to invest in poor equipment is quite high and scattered; fruit 3 ί The new layer (10) is needed to solve the above problems. A new method is proposed. The ore layer is effectively encapsulated under low temperature conditions (5) good heat dissipation capacity to form a high heat dissipation effect _ ' ΐ :: rate t gold layer; on the high reflectivity alloy layer on both sides! Flat = package -= (5) a depression, and at least 2: and the same reflectivity alloy layer from the group consisting of nickel and tin is fixed from gold, silver, and 6-face solid.
1258233 晶片ϊΐίί片Z具ί至少一電極層，且電極層之陽極和陰極在 j 層之陽極和陰極亦可在晶片之同-面。或者， 定ΐ接合ίΐ片合金層，且利用具有晶片合金層的一 而此晶片之發展系統的材料係選擇自_、Α腦、謹、 J二 a ^、A1 InGaP、A1GaInN、InN、GaInAsN 和 GaInPN 所構 而晶片合金層係選擇自金、銀、鎳、 =、、，、中至少擇二所形成的合金所組成之群組。晶片產生之光 在紫外光和紅外光光譜之間。且晶片之棋烤的 /皿度辄圍為120度到18〇度。 一本發明之另一態樣為一種陶瓷基板型LED封裝結構，包含·· 一陶瓷基板；一電極層，位於陶瓷基板上；一高反射率合金層， 位於電極層上且在高反射率合金層上表面的一部份塗有高分子接 合劑以形成接合點，其巾高分子接合她含碳、氫、氧根之 樹脂加上酸無水物及胺其中之一或之二；一晶片，被固定在接合 點上；以及一遮罩，位於電極層上並包覆晶片。 口 【實施方式】 底下將藉由圖式說明根據本發明之高亮度LED封裝方法。如 圖2所示，在電極層2〇1上形成一高反射率合金層2〇2,此高反射 率合金層202之材料可為金、銀、鎳、錫或是金、銀、鎳、 中至少擇^一所形成的合金。 ' 然後，如圖3所示，於高反射率合金層202之上表面的一部 份塗上高分子接合劑203，以形成接合點，此高分子接合劑2〇3 含有碳、氫、氧(CNHNON)根之環氧樹脂(Epoxy Resin)加上酸無水 物(Acid Anhydride)或胺(Amine)其中之一。接著如圖4所示了^ 晶片204固定於接合點上並烘烤，烘烤之較佳溫度為ι2〇度到18〇 度。圖5及圖6即表示烘烤後的情況。 須注意的是，晶片204可具有不同的形態。如圖5所示，晶 片204可具有晶片合金層205和電極層206，而電極層2〇6的陽^ 7 1258233 和陰極可在相同面。或者如圖6所示，晶片2〇4.可僅具有電極声 2〇6，而電極層206的陽極和陰極可在不同面。晶片2〇4的主二 ，可為 GaN、AlGaN、AIN、GalnN、GaAs、A1 InGaP、A1GaInN、！ G_sN或是GaInPN，晶片合金層205可為金、銀、錄' = =、銀、鎳、錫所形成的合金。而晶片204產生之光和光子 乾圍落在紫外光和紅外光光譜之間。 根據本發明之較佳實施例的LM)封裝方法，由於接著劑之 質特性’使得晶片之合金層或電極層得以和電極層有較大二接 ，積，如圖5和圖6所示。因此有較好的導電性，可形 ^光效率。而且，上述接著劑為透爾f，亦可形成較好的透光 *。更好的是此種方式LED封裝方法，在電性t面可媲美高、、田人 $共炼的封裝方式，且其散熱效果不亞於高溫合金共溶的封G T ，更優於使用銀膠的封裝方式，而且亦具有更好的固著力: 壯在此以Cree的晶片為例，將其以本發明之LED封裝方 t針對⑼推力、封裝後雜以及熱阻值，來探討此封裝方法 $點’而使用的係Ceramic型式的LEDPackage。在推 中， 針來推動已岐的晶片，探針的推力漸漸加i當 兔加達到一臨界值時，晶片會剝離。以銀膠固晶，平均的師^ • 30^重，而本發明之Lm)封裝方法之平均臨界值 重，為傳統銀膠固晶的兩倍多。 、“瓦 古田^緣示了本發明之封裝方法、傳統銀膠封裳方 共熔封裝方法之電性比較。橫軸為電流(⑹，而縱轴i 言、，iitLED封裝方法在電流⑴及電壓(v)之間的曲線：釦 =皿:、熔之電流⑴及賴⑺㈣線侧，轉粒 銀膠固晶所表現出之電流⑴及電壓⑺之間的曲 法、准持原晶粒之概’尤其在低電断其差異極大。、、友無 日目+ 了去本餐明之led封裝方法遠勝於傳統銀膠封梦 且具有比高溫合金絲職方法紐的散錄。“裳方法’ I258233 知封ί _ 了依據本發明之㈣封裝方法和習 絕大多數皆黏GifD的，’於圖中可發覺推拉後銀膠 佳，無法忍受太大^力不其與封裝結構合金層之枯著性不 之LED 3及圖8B之晶片’其繪示了依本發明 劑的殘留晶片，由此兩圖可看出晶片上並無接合 t足叹明利用本發明之led封裝方法可大為提高晶=㈡ 封幻了，據本發明之LED封裝方法所形成的LED qn? t 圖9圖4所示，陶究基板901上設有一電極芦 人入展〇電極層9〇2上設有一層高反射率合金層903，且高反』率 :和晶片⑽4藉由高分子接著劑_與電極層902接合革 i ’可如圖5所示具有一晶片合金層和一^ :曰電木k的％極和陰極可在相同面（未緣示）。《者如圖6所 =而曰日片9G4可僅具有一電極層，而電極層的陽極和陰極可在不 问面。而且’晶片904亦可如圖10和12所示一般，具有 =。陶絲板」G1和電極層9G2的—部份、高反射率^金層9〇3、 曰曰片MM以及咼分子接合劑9〇5都被包覆在遮蓋9〇6内。 須注意的是’陶瓷基板9〇1和遮蓋9〇6亦可呈現不同的形能， 陶究基板901可如目12至圖14般呈現平坦的鶴，或者如^ ，有-凹陷處906。而遮蓋9〇5可呈現如圖9的方形或圖1〇的燈 罩型。須注意的是，圖9至圖12僅舉例用以說明而已，並不用以 限制本發明之範圍。 雖然本發明已就一些較佳實施例來說明，但熟悉此技藝者藉 著前述的說明與附圖，當可對其進行修改、增加、及等效的變更9。 因此任何未脫離本發明之精神與範圍，而對其進行修改、增加、 及等效的變更’均應包含於本發明之中。 1258233 【圖式簡單說明】 圖1A與圖1B繪示了習知的陶瓷基板及結構型LEJ)壯 · 2繚示了根據本發明之陶替，某;h & κ' ι去’ 圖2繪示了根據本發明之陶瓷基板型led封裝方法的^中 ， 步驟 圖3繪示了根據本發明之陶瓷基板型LED封裝方法的其中— 9 步驟 圖4繪示了根據本發明之陶瓷基板型LED封裝方法的其中一 圖5繪示了根據本發明之陶瓷基板型LED裝 的封裝結構； 」衣乃忐疋成封裝 結構圖6緣示彻康本發明之封裝方法完成封褒的另一縣 高溫'傳統轉封裝方法以及 知二方圖 ^&了了^^嶋裝方法完成魏的; 圖11 ί ί ΐί ί明之LED封裝方法完成封裝的led; • 圖明之㈣封裝方法完成封裝的LED; 111¾給/-、根據本毛明之[仙封裝方法完成封裝的IF!) · .及 、、曰不了根據本發明之LED封裝方法完成封裝的LED’;以 【主本發明之陶裝綠挪懷的LED。 100 LED ^ ιοί晶片 1〇2接著劑 1〇3電極層 104陶究基板 1258233 201電極層 202高反射率合金層 203高分子接合劑 204晶片 205晶片合金層 206電極層 901陶瓷基板 902電極層 903高反射率合金層 904晶片 905高分子接合劑1258233 The wafer ϊΐ ί Z Z has at least one electrode layer, and the anode and cathode of the electrode layer are also on the same side of the wafer as the anode and cathode of the j layer. Alternatively, the bonding alloy layer is bonded, and the material of the development system using the wafer alloy layer is selected from the group consisting of _, camphor, 谨, J ii, A1 InGaP, A1GaInN, InN, GaInAsN, and The GaInPN structure and the wafer alloy layer are selected from the group consisting of alloys formed of at least two of gold, silver, nickel, =, , and . The light produced by the wafer is between the ultraviolet and infrared spectra. And the wafers of the wafer are baked at a degree of 120 degrees to 18 degrees. Another aspect of the invention is a ceramic substrate type LED package structure comprising: a ceramic substrate; an electrode layer on the ceramic substrate; a high reflectivity alloy layer on the electrode layer and in the high reflectivity alloy a part of the upper surface of the layer is coated with a polymer bonding agent to form a joint, and the towel polymer is bonded to one or two of the resin containing carbon, hydrogen and oxygen, and the acid anhydride and the amine; Fixed on the joint; and a mask on the electrode layer and covering the wafer. Port [Embodiment] A high-brightness LED packaging method according to the present invention will be described below by way of drawings. As shown in FIG. 2, a high reflectivity alloy layer 2〇2 is formed on the electrode layer 2〇1. The material of the high reflectivity alloy layer 202 may be gold, silver, nickel, tin or gold, silver or nickel. At least one of the alloys formed is selected. Then, as shown in FIG. 3, a portion of the upper surface of the high reflectivity alloy layer 202 is coated with a polymer bonding agent 203 to form a joint. The polymer bonding agent 2〇3 contains carbon, hydrogen, and oxygen. (CNHNON) Epoxy Resin plus one of Acid Anhydride or Amine. Next, as shown in Fig. 4, the wafer 204 is fixed at the joint and baked, and the preferred temperature for baking is ι 2 to 18 。. Fig. 5 and Fig. 6 show the situation after baking. It should be noted that the wafers 204 can have different configurations. As shown in Fig. 5, the wafer 204 may have a wafer alloy layer 205 and an electrode layer 206, and the anodes and electrodes of the electrode layers 2?6 may be on the same side. Alternatively, as shown in Fig. 6, the wafer 2〇4 may have only the electrode sound 2〇6, and the anode and cathode of the electrode layer 206 may be on different faces. The main two of the wafer 2〇4 can be GaN, AlGaN, AIN, GalnN, GaAs, A1 InGaP, A1GaInN, ! G_sN or GaInPN, the wafer alloy layer 205 may be an alloy formed of gold, silver, and recorded with '==, silver, nickel, and tin. The light and photon generated by the wafer 204 lie between the ultraviolet and infrared spectra. According to the LM) packaging method of the preferred embodiment of the present invention, the alloy layer or the electrode layer of the wafer is made larger and more integrated with the electrode layer due to the quality characteristics of the adhesive, as shown in Figs. 5 and 6. Therefore, it has good conductivity and can be shaped into light efficiency. Further, the above-mentioned adhesive agent is a container f, and a light transmittance* can be formed. What's even better is the LED packaging method of this type, which can be compared with the high-quality, high-tech alloy, and the heat-dissipating effect is no less than that of the high-temperature alloy co-dissolving GT. The packaging method of the glue, and also has a better fixing force: Take Cree's wafer as an example, and discuss the package with the LED package of the present invention for (9) thrust, post-package impurity and thermal resistance value. Method $point' and use the Ceramic type LEDPackage. In the push, the needle pushes the wafer that has been smashed, and the thrust of the probe is gradually increased. When the rabbit is added to a critical value, the wafer will peel off. The crystal is solidified by silver glue, and the average division is 30 mm, while the average critical value of the Lm) encapsulation method of the present invention is more than twice that of the conventional silver glue. "Wagutian ^ edge shows the electrical comparison of the packaging method of the present invention and the conventional silver-glued varnishing method. The horizontal axis is current ((6), and the vertical axis i, iitLED packaging method is in current (1) and The curve between voltage (v): deduction = dish:, current of melting (1) and Lai (7) (four) line side, the curve between the current (1) and voltage (7) of the grain-forming silver-gel solid crystal, the quasi-holding of the original grain In general, the difference between the two is extremely high. In addition, the friend has no Japanese + the LED packaging method to go to this meal is far better than the traditional silver rubber seal and has a scatter than the high temperature alloy wire method. ' I258233 知封ί _ According to the invention (4) packaging method and the majority of the sticky GifD, 'in the figure can be found after the push-pull silver gel, can not stand too much force and the alloy structure of the package structure The dry LED 3 and the wafer of FIG. 8B show the residual wafer according to the invention, and thus the two figures show that there is no bonding on the wafer. The LED packaging method of the present invention can be large. In order to improve the crystal=(2), the LED qn?t formed according to the LED packaging method of the present invention is shown in FIG. As shown, the ceramic substrate 901 is provided with an electrode, and the electrode layer 9 is provided with a high-reflectivity alloy layer 903, and the high-reverse rate: and the wafer (10) 4 are made of a polymer adhesive _ and an electrode. The layer 902 bonding leather i' may have a wafer alloy layer as shown in FIG. 5 and a cathode and a cathode of the bismuth bakelite k may be on the same side (not shown). The sheet 9G4 may have only one electrode layer, and the anode and cathode of the electrode layer may be left untouched. Moreover, the wafer 904 may also have the same as shown in Figs. 10 and 12, and has a = ceramic plate G1 and an electrode layer 9G2. - Partial, high reflectivity ^ gold layer 9 〇 3, 曰曰 MM and 咼 molecular bonding agent 9 〇 5 are all covered in the cover 9 〇 6. It should be noted that 'ceramic substrate 9 〇 1 and cover 9 The crucible 6 can also exhibit different shape energies, and the ceramic substrate 901 can be a flat crane as shown in FIG. 12 to FIG. 14, or as a ^, a depression 906. The cover 9〇5 can be square as shown in FIG. Figure 1 is a lampshade type. It should be noted that Figures 9 through 12 are for illustrative purposes only and are not intended to limit the scope of the invention. It is to be understood that those skilled in the art are able to make modifications, additions, and equivalents thereof, by the foregoing description and the accompanying drawings. Therefore, any modifications may be made without departing from the spirit and scope of the invention. , additions, and equivalent changes are included in the present invention. 1258233 [Simplified Schematic] FIG. 1A and FIG. 1B illustrate a conventional ceramic substrate and a structural type LEJ). Figure 2 illustrates a ceramic substrate type LED package method according to the present invention. Step 3 illustrates a ceramic substrate type LED package according to the present invention. </ RTI> </ RTI> </ RTI> Figure 9 shows one of the ceramic substrate type LED packaging methods according to the present invention. FIG. 5 illustrates a package structure of a ceramic substrate type LED package according to the present invention; Figure 6 shows that the encapsulation method of the invention of the invention is completed in another county high temperature 'conventional package method and the two-way diagram ^ & ^ ^ installation method to complete Wei; Figure 11 ί ί ΐ ί ί LED packaging method to complete the package of led; The encapsulation method completes the packaged LED; 1113⁄4 gives /-, according to the imaginary [Improved packaging IF!], and, can not be completed according to the LED packaging method of the present invention to complete the package of LED '; Invented the earthenware green LED. 100 LED ^ ιοί wafer 1 〇 2 adhesive 1 〇 3 electrode layer 104 ceramic substrate 1258233 201 electrode layer 202 high reflectivity alloy layer 203 polymer bonding agent 204 wafer 205 wafer alloy layer 206 electrode layer 901 ceramic substrate 902 electrode layer 903 High reflectivity alloy layer 904 wafer 905 polymer cement