TWI257140B - Semiconductor wafer inspection device and method - Google Patents

Semiconductor wafer inspection device and method

Info

Publication number
TWI257140B
TWI257140B TW094107675A TW94107675A TWI257140B TW I257140 B TWI257140 B TW I257140B TW 094107675 A TW094107675 A TW 094107675A TW 94107675 A TW94107675 A TW 94107675A TW I257140 B TWI257140 B TW I257140B
Authority
TW
Taiwan
Prior art keywords
scattering
light
narrow
wide
intensity
Prior art date
Application number
TW094107675A
Other languages
English (en)
Other versions
TW200534423A (en
Inventor
Fumi Nabeshima
Kazuya Togashi
Hiroshi Jiken
Yoshinori Suenaga
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Publication of TW200534423A publication Critical patent/TW200534423A/zh
Application granted granted Critical
Publication of TWI257140B publication Critical patent/TWI257140B/zh

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4788Diffraction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4711Multiangle measurement
    • G01N2021/4716Using a ring of sensors, or a combination of diaphragm and sensors; Annular sensor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854Grading and classifying of flaws
TW094107675A 2004-04-13 2005-03-14 Semiconductor wafer inspection device and method TWI257140B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004117910 2004-04-13

Publications (2)

Publication Number Publication Date
TW200534423A TW200534423A (en) 2005-10-16
TWI257140B true TWI257140B (en) 2006-06-21

Family

ID=35150251

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094107675A TWI257140B (en) 2004-04-13 2005-03-14 Semiconductor wafer inspection device and method

Country Status (5)

Country Link
US (1) US7576852B2 (zh)
JP (1) JP4694476B2 (zh)
DE (1) DE112005000828B4 (zh)
TW (1) TWI257140B (zh)
WO (1) WO2005101483A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7433033B2 (en) 2006-05-05 2008-10-07 Asml Netherlands B.V. Inspection method and apparatus using same
JP5565237B2 (ja) * 2010-09-22 2014-08-06 株式会社Sumco ウェーハの欠陥検出方法
DE102011076954A1 (de) 2011-06-06 2012-03-15 Siltronic Ag Fertigungsablauf für Halbleiterscheiben mit Rückseiten-Getter
CN103245677A (zh) * 2013-05-02 2013-08-14 苏州欧菲光科技有限公司 感光光阻检验方法及装置
JP6256413B2 (ja) * 2015-05-27 2018-01-10 信越半導体株式会社 半導体ウェーハの評価方法
JP6601119B2 (ja) * 2015-10-05 2019-11-06 株式会社Sumco エピタキシャルウェーハ裏面検査装置およびそれを用いたエピタキシャルウェーハ裏面検査方法
CN108133900A (zh) * 2017-12-21 2018-06-08 上海华力微电子有限公司 一种缺陷扫描机台及其缺陷自动分类方法
JP7158224B2 (ja) * 2018-09-26 2022-10-21 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
CN114018930A (zh) * 2021-10-26 2022-02-08 上海新昇半导体科技有限公司 一种硅晶体原生缺陷的检测方法
EP4181171A1 (de) 2021-11-12 2023-05-17 Siltronic AG Verfahren zur reinigung einer halbleiterscheibe

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271916B1 (en) * 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
JPH11126736A (ja) 1997-10-23 1999-05-11 Mitsubishi Electric Corp 半導体装置の製造管理装置および半導体装置の製造管理システム
JP3664134B2 (ja) 1999-10-14 2005-06-22 三菱住友シリコン株式会社 半導体ウェーハ表面の検査方法
JP2001176943A (ja) 1999-12-15 2001-06-29 Shin Etsu Handotai Co Ltd 半導体ウェーハの評価方法
JP2002098645A (ja) 2000-09-26 2002-04-05 Hitachi Electronics Eng Co Ltd 基板の表面検査装置及び表面検査方法
US6515742B1 (en) * 2000-11-28 2003-02-04 Memc Electronic Materials, Inc. Defect classification using scattered light intensities

Also Published As

Publication number Publication date
JPWO2005101483A1 (ja) 2008-03-06
TW200534423A (en) 2005-10-16
US7576852B2 (en) 2009-08-18
DE112005000828T5 (de) 2007-02-22
US20090040512A1 (en) 2009-02-12
DE112005000828B4 (de) 2017-12-21
JP4694476B2 (ja) 2011-06-08
WO2005101483A1 (ja) 2005-10-27

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