TWI257140B - Semiconductor wafer inspection device and method - Google Patents
Semiconductor wafer inspection device and methodInfo
- Publication number
- TWI257140B TWI257140B TW094107675A TW94107675A TWI257140B TW I257140 B TWI257140 B TW I257140B TW 094107675 A TW094107675 A TW 094107675A TW 94107675 A TW94107675 A TW 94107675A TW I257140 B TWI257140 B TW I257140B
- Authority
- TW
- Taiwan
- Prior art keywords
- scattering
- light
- narrow
- wide
- intensity
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4711—Multiangle measurement
- G01N2021/4716—Using a ring of sensors, or a combination of diaphragm and sensors; Annular sensor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004117910 | 2004-04-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200534423A TW200534423A (en) | 2005-10-16 |
TWI257140B true TWI257140B (en) | 2006-06-21 |
Family
ID=35150251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094107675A TWI257140B (en) | 2004-04-13 | 2005-03-14 | Semiconductor wafer inspection device and method |
Country Status (5)
Country | Link |
---|---|
US (1) | US7576852B2 (zh) |
JP (1) | JP4694476B2 (zh) |
DE (1) | DE112005000828B4 (zh) |
TW (1) | TWI257140B (zh) |
WO (1) | WO2005101483A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7433033B2 (en) | 2006-05-05 | 2008-10-07 | Asml Netherlands B.V. | Inspection method and apparatus using same |
JP5565237B2 (ja) * | 2010-09-22 | 2014-08-06 | 株式会社Sumco | ウェーハの欠陥検出方法 |
DE102011076954A1 (de) | 2011-06-06 | 2012-03-15 | Siltronic Ag | Fertigungsablauf für Halbleiterscheiben mit Rückseiten-Getter |
CN103245677A (zh) * | 2013-05-02 | 2013-08-14 | 苏州欧菲光科技有限公司 | 感光光阻检验方法及装置 |
JP6256413B2 (ja) * | 2015-05-27 | 2018-01-10 | 信越半導体株式会社 | 半導体ウェーハの評価方法 |
JP6601119B2 (ja) * | 2015-10-05 | 2019-11-06 | 株式会社Sumco | エピタキシャルウェーハ裏面検査装置およびそれを用いたエピタキシャルウェーハ裏面検査方法 |
CN108133900A (zh) * | 2017-12-21 | 2018-06-08 | 上海华力微电子有限公司 | 一种缺陷扫描机台及其缺陷自动分类方法 |
JP7158224B2 (ja) * | 2018-09-26 | 2022-10-21 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
CN114018930A (zh) * | 2021-10-26 | 2022-02-08 | 上海新昇半导体科技有限公司 | 一种硅晶体原生缺陷的检测方法 |
EP4181171A1 (de) | 2021-11-12 | 2023-05-17 | Siltronic AG | Verfahren zur reinigung einer halbleiterscheibe |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6271916B1 (en) * | 1994-03-24 | 2001-08-07 | Kla-Tencor Corporation | Process and assembly for non-destructive surface inspections |
JPH11126736A (ja) | 1997-10-23 | 1999-05-11 | Mitsubishi Electric Corp | 半導体装置の製造管理装置および半導体装置の製造管理システム |
JP3664134B2 (ja) | 1999-10-14 | 2005-06-22 | 三菱住友シリコン株式会社 | 半導体ウェーハ表面の検査方法 |
JP2001176943A (ja) | 1999-12-15 | 2001-06-29 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの評価方法 |
JP2002098645A (ja) | 2000-09-26 | 2002-04-05 | Hitachi Electronics Eng Co Ltd | 基板の表面検査装置及び表面検査方法 |
US6515742B1 (en) * | 2000-11-28 | 2003-02-04 | Memc Electronic Materials, Inc. | Defect classification using scattered light intensities |
-
2005
- 2005-03-14 TW TW094107675A patent/TWI257140B/zh active
- 2005-04-13 WO PCT/JP2005/007120 patent/WO2005101483A1/ja active Application Filing
- 2005-04-13 DE DE112005000828.2T patent/DE112005000828B4/de active Active
- 2005-04-13 US US10/598,933 patent/US7576852B2/en active Active
- 2005-04-13 JP JP2006512348A patent/JP4694476B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JPWO2005101483A1 (ja) | 2008-03-06 |
TW200534423A (en) | 2005-10-16 |
US7576852B2 (en) | 2009-08-18 |
DE112005000828T5 (de) | 2007-02-22 |
US20090040512A1 (en) | 2009-02-12 |
DE112005000828B4 (de) | 2017-12-21 |
JP4694476B2 (ja) | 2011-06-08 |
WO2005101483A1 (ja) | 2005-10-27 |
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