TWI256721B - ESD protection circuit with active device - Google Patents

ESD protection circuit with active device

Info

Publication number
TWI256721B
TWI256721B TW092122170A TW92122170A TWI256721B TW I256721 B TWI256721 B TW I256721B TW 092122170 A TW092122170 A TW 092122170A TW 92122170 A TW92122170 A TW 92122170A TW I256721 B TWI256721 B TW I256721B
Authority
TW
Taiwan
Prior art keywords
protection circuit
active device
esd protection
discharge device
electrostatic
Prior art date
Application number
TW092122170A
Other languages
English (en)
Other versions
TW200403831A (en
Inventor
Ming-Dou Ker
Tang-Kui Tseng
Hsin-Chin Jiang
Chyh-Yih Chang
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Publication of TW200403831A publication Critical patent/TW200403831A/zh
Application granted granted Critical
Publication of TWI256721B publication Critical patent/TWI256721B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Emergency Protection Circuit Devices (AREA)
TW092122170A 2002-08-29 2003-08-12 ESD protection circuit with active device TWI256721B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/230,287 US7092227B2 (en) 2002-08-29 2002-08-29 Electrostatic discharge protection circuit with active device

Publications (2)

Publication Number Publication Date
TW200403831A TW200403831A (en) 2004-03-01
TWI256721B true TWI256721B (en) 2006-06-11

Family

ID=31976445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092122170A TWI256721B (en) 2002-08-29 2003-08-12 ESD protection circuit with active device

Country Status (2)

Country Link
US (2) US7092227B2 (zh)
TW (1) TWI256721B (zh)

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US20040256692A1 (en) * 2003-06-19 2004-12-23 Keith Edmund Kunz Composite analog power transistor and method for making the same
US20060125014A1 (en) * 2004-12-14 2006-06-15 Nui Chong Diode with low junction capacitance
DE102005027368A1 (de) * 2005-06-14 2006-12-28 Atmel Germany Gmbh Halbleiterschutzstruktur für eine elektrostatische Entladung
US7333312B2 (en) * 2005-07-01 2008-02-19 Altera Corporation ESD device with low trigger voltage and low leakage
US7825473B2 (en) * 2005-07-21 2010-11-02 Industrial Technology Research Institute Initial-on SCR device for on-chip ESD protection
US8804289B2 (en) * 2007-10-17 2014-08-12 Nxp, B.V. Voltage surge protection circuit
US7701682B2 (en) * 2008-01-31 2010-04-20 Freescale Semiconductors, Inc. Electrostatic discharge protection
JP2009277963A (ja) * 2008-05-16 2009-11-26 Toshiba Corp 半導体装置
JP5525736B2 (ja) * 2009-02-18 2014-06-18 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法
US9385241B2 (en) * 2009-07-08 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits
US20110096446A1 (en) * 2009-10-28 2011-04-28 Intersil Americas Inc. Electrostatic discharge clamp with controlled hysteresis including selectable turn on and turn off threshold voltages
US8416584B2 (en) * 2009-10-30 2013-04-09 Intersil Americas Inc. Power supply with low power consumption hiccup standby operation
US8634172B2 (en) 2010-05-18 2014-01-21 International Business Machines Corporation Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structure
US8921941B2 (en) * 2010-08-05 2014-12-30 Mediatek Inc. ESD protection device and method for fabricating the same
US9190501B2 (en) * 2013-02-26 2015-11-17 Broadcom Corporation Semiconductor devices including a lateral bipolar structure with high current gains
TWI655746B (zh) * 2015-05-08 2019-04-01 創意電子股份有限公司 二極體與二極體串電路
US9882003B1 (en) 2016-07-11 2018-01-30 Tower Semiconductor Ltd. Device and system of a silicon controlled rectifier (SCR)
CN108231758A (zh) * 2016-12-22 2018-06-29 台湾类比科技股份有限公司 静电放电保护电路及静电放电保护的深次微米半导体元件
US10770555B2 (en) * 2017-07-25 2020-09-08 Vanguard International Semiconductor Corporation Semiconductor device and method for forming the same

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US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
US5225702A (en) * 1991-12-05 1993-07-06 Texas Instruments Incorporated Silicon controlled rectifier structure for electrostatic discharge protection
US5452171A (en) * 1992-06-15 1995-09-19 Hewlett-Packard Company Electrostatic discharge protection circuit for integrated circuits
US5400202A (en) * 1992-06-15 1995-03-21 Hewlett-Packard Company Electrostatic discharge protection circuit for integrated circuits
US5646808A (en) * 1994-08-05 1997-07-08 Kawasaki Steel Corporation Electrostatic breakdown protection circuit for a semiconductor integrated circuit device
KR0150992B1 (ko) * 1994-08-31 1998-10-01 김광호 고내압용 모스 트랜지스터 및 그 제조방법
US5510279A (en) * 1995-01-06 1996-04-23 United Microelectronics Corp. Method of fabricating an asymmetric lightly doped drain transistor device
JPH08250728A (ja) * 1995-03-10 1996-09-27 Sony Corp 電界効果型半導体装置及びその製造方法
US5572394A (en) * 1995-04-06 1996-11-05 Industrial Technology Research Institute CMOS on-chip four-LVTSCR ESD protection scheme
US5576574A (en) * 1995-06-30 1996-11-19 United Microelectronics Corporation Mosfet with fully overlapped lightly doped drain structure and method for manufacturing same
US5631793A (en) * 1995-09-05 1997-05-20 Winbond Electronics Corporation Capacitor-couple electrostatic discharge protection circuit
US5747834A (en) * 1995-09-29 1998-05-05 Texas Instruments Inc Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits
US5698884A (en) * 1996-02-07 1997-12-16 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
US5734541A (en) * 1996-05-20 1998-03-31 Pmc-Sierra, Inc. Low voltage silicon controlled rectifier structure for ESD input pad protection in CMOS IC's
US5763919A (en) * 1996-07-08 1998-06-09 Winbond Electronics Corporation MOS transistor structure for electro-static discharge protection circuitry having dispersed parallel paths
US5744842A (en) * 1996-08-15 1998-04-28 Industrial Technology Research Institute Area-efficient VDD-to-VSS ESD protection circuit
US5740000A (en) * 1996-09-30 1998-04-14 Hewlett-Packard Co. ESD protection system for an integrated circuit with multiple power supply networks
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
US6147538A (en) * 1997-02-05 2000-11-14 Texas Instruments Incorporated CMOS triggered NMOS ESD protection circuit
US5982600A (en) * 1998-04-20 1999-11-09 Macronix International Co., Ltd. Low-voltage triggering electrostatic discharge protection
US6239472B1 (en) * 1998-09-01 2001-05-29 Philips Electronics North America Corp. MOSFET structure having improved source/drain junction performance
US6211023B1 (en) * 1998-11-12 2001-04-03 United Microelectronics Corp. Method for fabricating a metal-oxide semiconductor transistor
US6256184B1 (en) * 1999-06-16 2001-07-03 International Business Machines Corporation Method and apparatus for providing electrostatic discharge protection
US6546522B1 (en) * 1999-08-06 2003-04-08 United Microelectronics Corp. Signal-to-noise ratio optimization of multiple-response design-of-experiment
US6362062B1 (en) * 1999-09-08 2002-03-26 Texas Instruments Incorporated Disposable sidewall spacer process for integrated circuits
US6528850B1 (en) * 2000-05-03 2003-03-04 Linear Technology Corporation High voltage MOS transistor with up-retro well
US6426291B1 (en) * 2000-08-31 2002-07-30 Micron Technology, Inc. Method of co-deposition to form ultra-shallow junctions in MOS devices using electroless or electrodeposition
US6671153B1 (en) * 2000-09-11 2003-12-30 Taiwan Semiconductor Manufacturing Company Low-leakage diode string for use in the power-rail ESD clamp circuits
US6822297B2 (en) * 2001-06-07 2004-11-23 Texas Instruments Incorporated Additional n-type LDD/pocket implant for improving short-channel NMOS ESD robustness

Also Published As

Publication number Publication date
US7092227B2 (en) 2006-08-15
US20050127445A1 (en) 2005-06-16
TW200403831A (en) 2004-03-01
US7554159B2 (en) 2009-06-30
US20040042143A1 (en) 2004-03-04

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees