TWI253105B - Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, recording medium, and device manufacturing method - Google Patents

Abstract

A wavefront aberration of a projection optical system is measured and information on the wave aberration is acquired (step 102). Moreover, a reticle pattern is transferred onto a wafer via the projection optical system (steps 104 to 108). Next, the wafer having the transferred pattern is developed, a line width of a resist image formed on the wafer is measured, and an image line width difference between the first line pattern extending in a predetermined direction and the second line pattern orthogonally intersecting the first line pattern is measured (steps 112 to 118). The projection optical system is adjusted so that the size of the ninth term (lower degree spherical aberration) is controlled according to the value of the twelfth term (higher degree astigmatism) of the Zernike multi-nominal in which the wave aberration is expanded and the aforementioned line width difference (steps 120 to 124).

Description

1253105 玫,发明说明: [Technical field to which the invention pertains] Seventh aspect of the invention relates to an adjustment method, a prediction method, a method of fading, an exposure method, an exposure apparatus, a program, and a method for the projection optical system. In other words, a method for predicting the characteristics of a pattern image by first shifting a pattern image on the first surface and a projection method on the second surface to the optical system through the projection light system is used. An evaluation method for evaluating characteristics of a pattern image, and an adjustment method for adjusting a formation state of a scene image, and an exposure method and material for forming a pattern on an object by the adjustment method or the adjustment method of the projection/learning system An exposure method suitable for implementing the exposure method or the adjustment method of the projection optical system, a program for causing a computer to execute the above-described prediction method, and a component manufacturing method using the above-described exposure method or exposure device. [Prior Art] In general, in the lithography process for manufacturing micro-elements such as semiconductor elements, display elements, thin films, and micro-computers, the use of hood marks (hereinafter, collectively referred to as "reticles" is used. ”), through the projection of light, transferred to the wafer or glass plate and other sensitive objects (hereinafter referred to as 'shame: V on the so-called stepper or so-called scanner (also known as scanning step) a linear projection device. It is known that such an exposure device is equivalent to measuring the line width difference between a vertical line pattern formed on a wafer and a transfer image (photoresist image, etc.) of a horizontal line pattern by exposure. The vertical line pattern of the projection optical system is inferior to the horizontal line pattern image: due to the 1253105 system: the asymmetrical aberration such as coma aberration is the main cause. Therefore, the measurement result has no 1 to detect the cilia When the asymmetric aberration component is poor, it is not easy to correct the line width difference. When the RP is close, when using the projection optical system, the interferometer is used to measure the wavefront of the IV light to the position of the system (or within the exposure range). Aberrations make Zernike polynomials (for example Stripe check positivity polynomial) = The wavefront aberration (aberration function) of the measurement is expanded by the series and adjusted so that the coefficients of each series (the suffix items) are obtained (4) , the size of the) is below the target value. This adjustment is made because the above-mentioned items (each check) represent the specific wavefront aberration components, and the coefficients represent the size of each aberration component. Recently, the aberration control precision of the projection optical system (projection lens) is introduced into the wavefront aberration measurement of the process of the projection optical system, and is rapidly improved by using the control of the level expansion of the wavefront aberration burying polynomial And 'based on the use of the burial gram polynomial to determine the size of the wavefront aberration (the aberrations of the ... gram) and the linear sensitivities (z (10) lke Sensitlvlty) table to determine the projection The imaging performance of the optical system, such as 'aberration (or the value of the index), can also be judged by the simple side of the simple effect by the so-called sensitivity method "About the influence of aberrations". Sensation The table refers to the selection conditions of the respective phases, that is, the optical conditions (exposure wavelength, maximum profit, use NA, illumination NA, opening σ shape of the aperture of the illumination system, etc.), evaluation items (hood type, line width, Evaluation amount, pattern information, etc.) Under the plurality of exposure conditions defined by the combination of these optical products and evaluation items, the imaging performance of the projection optical system obtained by 1253105, for example, various aberrations (or The calculation table consisting of the amount of change in each of the indicators of the index value. However, there is a possibility that the evaluation amount of the so-called Chanek method may not be applied, and the line width varies. As disclosed on page 713 of Pr〇c SpiE ν〇1·4346, according to the rotationally symmetric component of the aberration (〇0 component), the second-order rotationally symmetric component (2 Θ component), the line width becomes the maximum focus position change, And the maximum value of the line width also changes. Moreover, there are also two interactions of aberration (10) components and 2 components. Therefore, the so-called sensitization method does not apply to the presumption of line width. In the use of strips, textures > gram polynomials, the wavefront aberration series is expanded (4) into the symmetrical component (0 Θ component), including the low-order term representing defocus, ie, the 4th Wei Wei 4) or representation The ninth item of the low-order spherical aberration (coefficient & 'the (9) component wavefront variation is equal, so the effect on the pattern imaging state of the V line (vertical line) and the squall line (horizontal line) is equal. &, the second-order rotational symmetry into the injury (2Θ component) term has the first term representing the lower-order astigmatic aberration (system = the 12th term representing the higher-order astigmatic aberration (coefficient...image-like; longitudinal: ^, ' , ,付付, but the opposite is equal. Therefore, it is caused by both the "component" and the 20 component (that is, the coefficient (component) of both is not zero). The difference in the influence of the aberration of the line width. Because of this 愔, V 0a , there is currently no simple and true ^ (4) case and the horizontal line pattern image line width difference. , "彳疋 method, therefore The adjustment is also difficult. 1253105 The present invention is a method for adjusting the system in the above situation, and the other purpose is to provide a projection optical case. The line width difference between each other. The line can be freely controlled to be orthogonal to each other. The second object of the present invention is the prediction of the & degree through the projection optical ratio: the prediction method 'it can be simple and high precision / 兀 之The third object of the present invention is to provide an evaluation method, the degree of which is evaluated by the characteristics of the pattern image of the projection optical system, and the fourth object of the present invention is to provide an adjustment method adjustment adjustment through the projection optical system. The fifth aspect of the present invention provides an exposure method and an exposure through projection optical system to form a pattern on an object. - The sixth object of the present invention is to provide a program that can be used for a short period of time. And high-precision execution of the pattern transfer characteristics of the pre-^. [Abstract] At first glance, it is considered that the use of the gram-check polynomial (for example, the fringe polynomial) for the series expansion of the rotationally symmetric component (four) components) There is no correlation between the term and the second-order rotationally symmetric component (2Θ component). As a result, the inventors repeated the results of various experiments (including simulations), in fact, the bamboo shoots are now due to the light surface. The interaction of the inner (the independent variable p of the polynomial, the phase distribution of the same-order (four) component and the two components), the wavefront disorder in the pupil plane sometimes differs in the longitudinal and lateral directions. For example, when the component of the 12th item of the wavefront aberration series (using the stripe Chankov polynomial coefficient Z, 2) is not zero, it is found that the movement and exchange of the optical elements constituting the projection optical system are changed. Item 9 of the spherical aberration component (coefficient)

The size of Zg) can control the phase distribution in the upper and lower directions in the pupil plane, and can adjust the line width difference of the above-mentioned vertical and horizontal lines. The present invention has been made in accordance with the above novel idea of ρ^ Μ 4 obtained by the inventors, and the following methods and configurations are employed. According to the first point of view, the adjustment method of the system is characterized in that the first aspect is characterized in that: the first process includes obtaining information including the former characteristics; and the present invention is the first projection optical system 1 The pattern image on the surface is projected in the first optical of the second optical system... The τ does not grasp, and the eleventh of the orthogonal direction is extended in the predetermined direction arranged on the 16th of the Lishu. The line pattern and the image of the 2-line pattern of the i-th image f/the second line are formed on the second surface, and the line width of the first line pattern image is the same as the second line width (the second line pattern image) Line width); and the difference between the value of the above u and the line width obtained according to the first process, in order to control the influence of the line width difference caused by the interaction with the foregoing 2 Optical characteristics dry ' Μ, adjust the aforementioned projection optical system. What is the big point? b at 'in the second process, you can also use the projection optics Li Tongshi into the first line map. A @ h 兀 糸 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Alternatively, the line width difference may be measured after the image of the i-th line pattern is formed. Θ If this is the case, for example, in order to control the size of the easily configurable size, the projection optics and system can be adjusted, so that it is possible to control the adjustment of the first two systems due to the projection optical system. Poor (and thus generated). Therefore, it is possible to freely control the line width difference between the line patterns of the special time. In the case where the aforementioned i-th q projection is the wavefront aberration information of the system, in the above-mentioned 帛3 process, %: the singularity polynomial, which is obtained by the first process Any two-order rotational symmetry component of the wavefront aberration level (fourth number is 4 or more): when 疋zero, according to the width difference of the front-order second-order rotational symmetry component term, in order to control the aforementioned second-order rotational symmetry into two The size of the pair can be adjusted to the aforementioned projection optics 2; in this case, the 12th item of the β 1 component item / 0% of the symmetry component is the ninth item of the 4th order cos2 term: the rotationally symmetric component The item is 4th order. "Parts... Item 9. Reading the symmetrical component system "body 0 Θ component item - to the adjustment method of the first projection optical system of Guangyue is the first system r information is the investment ^ (four) two, one clothing red first process direct quantity When measuring η and η of the aberration, the above-mentioned wavefront of the wavefront aberration of the projection optical system can be obtained, or the first process can be measured in each group and the previous measurement: The first? : The pattern pattern (which is arranged on the first surface, and the size can be compared with the measurement result, and the difference between the best focus positions at the time of fixing the image can be pushed as the root wave aberration) Information on the second-order rotationally symmetric component term The adjustment method of the second-order projection process obtained by the third projection process of the present invention is the first one when the information of the wavefront aberration of the third process is compared with that of the optical system. The order of the rotationally symmetric component; when the m-width difference is not zero, the tenth, ten, and;;;: the line width difference is adjusted according to the width difference approaching the design value, in order to make the line rotationally symmetric component item The projection optical system 'is to be 2nd-ordered. ^ The size of the rotationally symmetric component of the number is optimal. The first projection of the present invention and the 'transmission projection optical system: the adjustment method is based on the second process projection. Like the space image of the line pattern formed on the second surface (interimage, the line pattern can also be determined by the line width of the line pattern of the _x^^2 line, but this is not the case, the second process system is described in the month 1J. The method includes: the foregoing Π=, wherein the image of the second line pattern is formed on the side of the two brothers On the object; and the previous process, measuring the first line width (formed on the object: = line width of the line pattern image) and the second line width (formed on the line of the aforementioned object image). The line width can be obtained by measuring the latent image, the photoresist image, or the (four) image of the imaginary line pattern formed on the object using the adjustment of the exposure device: , , , , or SEM. 12 1253105, the method for adjusting the first projection optical system of the first month, in the third aspect of the invention, is to control the position of the at least one optical element of the projection optical system to the J 1 degree of freedom direction and At least one of the gas pressure control in the partial optical path controls the magnitude of the second optical characteristic. In the method of adjusting the i-th projection optical system of the present invention, the second line pattern is a longitudinal line pattern of the second line pattern. In the line pattern, the first light-drying characteristic and the second optical characteristic are obtained by the intersection of the combination of the vertical line pattern and the transverse line pattern image. Process, and find the degree of sensation in the cross The plurality of numbers are determined by a process in which the vertical and horizontal lines are different from each other. The first projection optical system adjustment method of the present invention is the first system: the obtained information is the projection optical system wavefront U The first and second optical characteristics of the information clothing are based on the singularity polynomial, and the plurality of Chanek terms in which the wavefront aberration series obtained in the first process is developed are the same order and the type According to the second aspect, the ninth exposure method of the present invention transfers the circuit pattern on the second side to the object disposed on the second surface through the projection optical system. The method includes: adjusting a process, using the adjustment method of the second projection optical system of the present invention to adjust the projection optical system; and a positive transfer process, which uses the adjusted projection optical system, and the circuit is as described The pattern is transferred onto the aforementioned object. According to this, since the projection optical system is adjusted by using the adjustment method of the second projection optical system of the present invention, in order to make the vertical line pattern and the horizontal line, the line width difference of the 13 ? 2531 〇 5 pattern image becomes a design value. , adjust the projection optical system. Example ‘ For example, adjust the projection optical system so that the line width difference between the vertical line pattern and the horizontal line pattern of the same line width is the smallest (for example, zero). Further, since the circuit pattern is transferred onto the object by using the projection optical system of the adjustment, the transfer of the high-precision pattern which reduces the line width difference between the vertical line pattern and the horizontal line pattern can be realized. According to the third aspect, the third exposure apparatus of the present invention transmits the pattern formed on the hood to the object through the optical system for exposure, and is characterized in that the third embodiment of the present invention is used. The projection optical system adjusted by the adjustment method of the projection optical system is used as the optical system for exposure and the φ system. In this case, since the projection optical system to be adjusted by the adjustment method of the ninth projection optical system of the present invention is used as the optical system for optical use, the projection optical system is used to transfer the pattern formed on the hood. On the object, the transfer of the precision pattern which reduces the line width difference between the vertical line pattern and the horizontal line pattern can be realized. From the point of view of the brother 4, the present invention is a projection optical system.

: The adjustment method 'projects the pattern image on the second surface on the second surface; and the feature includes: = the process, the acquisition of the first part of the projection optical system; and the special course ' According to the first process, the first square value and the i-th line pattern (the U-intersection width and the second line pattern (the first line pattern) are arranged on the ith surface. The second optical which is affected by the line width between the i-th line pattern image line formed on the second surface and the line width of the second line pattern image is used for the mutual optical element 14 1253105 of the first optical characteristic. The size of the characteristic 'adjusts the projection optical system. According to this, the second optical characteristic is controlled according to the difference between the value of the second optical characteristic and the line width of the second line pattern and the second line pattern. The interaction of the optical characteristics affects the line width difference, which is the difference between the line width of the i-th line pattern image and the line width of the second line pattern formed on the second surface by the projection optical system) , adjusting the projection optical system, therefore, It is projected light The difference between the line width of the i-th line pattern image on the second surface and the line width of the second line pattern line (line width difference), the first line pattern line width on the first jade surface and the second line When the difference in line width of the line pattern occurs, for example, when a trace error of the pattern on the hood is generated, the line width difference between the orthogonal line patterns can be freely controlled. In this case, the first line is The pattern is a vertical line pattern, and the second line pattern is a horizontal line pattern, and the ith optical characteristic and the second optical characteristic are combined with each other by the combination of the vertical line pattern image and the horizontal line pattern image. Find the process of checking the sensitivity, and: = The sign of the Chanek sensitivity in the violation of the term is determined by the process of combining the Nike items with each other in the vertical and horizontal lines. See you, 2, 5 points In the second exposure method of the present invention, the circuit pattern on the second surface is transferred to the object disposed on the second surface by the U-lighting system, and includes: an adjustment process, The method of the present invention is used to adjust the aforementioned projection light, and the adjustment of the system 15 1553105 In the transfer process, the circuit pattern is transferred onto the object by using the adjusted projection optical system. ^ According to this, the projection optical system is adjusted by using the adjustment method of the second projection optical system of the present invention. For example, the difference between the line width of the first line pattern image formed on the first surface and the line width of the second line pattern by the projection optical system due to an image error or the like of the pattern on the hood (line In the case of the width difference, the adjustment of the projection optical system is performed so that the line width of the free-form orthogonal line patterns is different from each other due to the use of the adjusted projection optical system

By transferring the circuit pattern onto the object, it is possible to realize high-precision pattern transfer which reduces the difference in line width between the vertical line pattern and the horizontal line pattern. According to the sixth aspect, the second exposure apparatus of the present invention transmits the pattern formed on the hood to the object through the optical system for exposure, and is provided with the present invention. A projection optical system adjusted by the adjustment method of the second projection optical system is used as the optical system for exposure. According to this, since the projection optical system adjusted by the adjustment method of the second projection optical system of the present invention is provided as the exposure optical system, the projection optical system is used to transfer the pattern formed on the hood to the object. This achieves a high-precision pattern transfer which reduces the line width difference between the vertical line pattern and the horizontal line pattern. According to the seventh aspect, the third projection optical system adjustment method of the present invention projects the pattern image on the first surface onto the second surface, and includes: acquiring the projection optical system The process of wavefront aberration information; 16 l253l〇5 The process of obtaining the image information of the aforementioned pattern's and the adjustment process is to use the 杳 series to display the n I eve item, and cast the wavefront aberration by $## In one item, the interaction is in the cross-term of the combination of the 杳 戌 戌 f + + + + + + + + f f f f f f f f f f f f f f f f f f f f For the description of the projection optical system. 7 , I Intersection to adjust the projections of the right side of the projection, according to the words, the target tpf, , the day & to the projection optical system wavefront aberration m, and can get the relevant pattern Cast the image of the shell. Tie, come to the whistle iR Dan / on ' And, based on this information to adjust the projection of the system of the first wave of the wavefront aberration series „ 克 polynomial’ will act to make the aforementioned image characteristics Arbitrary influence = in the balance, consider 杳, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ~ - - - - - - - - - - - - - - - - - - - - - - - - - - - 化 ^ ^ ^ 化 化 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学 光学The whole _ a soil, so the conventional adjustment of the difficulty of the image of the projection optical system, etc., can, the whole 浐 - "for example, can also adjust the high-order aberration = make the pattern like the formation state more like =::::= When the package is *, the projection is based on the viewpoint. The present invention is based on the object disposed on the circuit pattern surface on the first side of the second side through the projection optical system, and is characterized in that: 2: 12,123,105,105 The process is to adjust the projection optical system using the adjustment method of the 投影3 projection optical system of the present invention; and the transfer process, wherein the circuit pattern is transferred onto the object by using the adjusted projection optical system. According to this, since the projection optical system is adjusted by using the adjustment method of the third projection optical system of the present invention, the projection optical system is adjusted so that the pattern image is formed better, and the adjustment is used. The shadow optical system and the system "transfer the circuit pattern on the object, so that the high-precision pattern can be transferred. From the ninth point of view, the third exposure device of the present invention transmits the optical system for exposure. The pattern formed on the hood is transferred onto the object, and the projection optical system adjusted by the adjustment method of the third projection optical system of the present invention is used as the exposure optical system. Since the projection optical system adjusted by the adjustment method of the third projection optical system of the present invention is used as the exposure optical system, the optical system is used to transfer the pattern formed on the hood to the object. The transfer of the high-precision pattern is achieved. According to the tenth point of view, the fourth exposure apparatus of the present invention is capable of illuminating the pattern disposed on the second surface by means of a beam, and transferring the pattern through the projection optical system. It is printed on an object arranged on the surface of the f 2 and is characterized by: ' Optical characteristics measuring device, system, measuring optical characteristics (including the aforementioned brother of the Μ Μ 1 1 Optical characteristics); 18 1253105 16 times to see the measuring device, the first line pattern is measured separately (the 口 俜 ^ ^ ^ ^ 一 一 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The line width is different from the line width of the second line pattern (which is orthogonal to the 1st line pattern); the image forming state adjusting device is a state in which the image is formed; and the image control device of the technique 'Based on the value of the first optical characteristic of the above-mentioned optical system, and the measured m before the disk is broken. The line width is 1 line width (the line width measuring device is used, and the line of the first line pattern image is used) Width) 筮 9 green 々 2 green Ft ampere A deep view) and brother 2 line width (the aforementioned second series line width) difference, using the above image formation state adjustment device to 2 optical characteristics (because of the front optical (four) The size of the interaction is such that the line width difference is affected. Function Optics::ΓΛΒ: It can be measured by optical characteristic measurement. 2 Projection light (4) & at least 光学^ optical characteristics). In addition, 耩 is measured by the line pill measuring device, and (4) "1" line pattern (which is formed by the projection photon ' system on the 苐2 surface (image surface)) The line width is equal to the second line pattern (orthogonal to the first line pattern). The line width measurement using the line width measuring device can also measure the object formed on the first surface. The line between the vertical line pattern and the horizontal line pattern (the latent image or the etched image) is wide, and the space image of the vertical line pattern and the horizontal line pattern may be formed on the second surface to measure the space. The width of the image line is the same as the value of the first optical characteristic and the ith line width when the measurement of the ith optical characteristic is performed by the optical characteristic measuring device (system: wide measurement) The difference between the line width of the first line pattern image measured by the device and the width of the second line width U逑 second line pattern image (line width difference) is formed by the image shape 19 1253105 To control the size of the 学2 学 特性 characteristics due to the interaction with the affected line characteristics of the first line width difference. Therefore, for example, even if it is the case of the third degree, you 丨a The first light is easy to adjust the optical characteristics of the first sub-feature adjustment =:::: The state-adjusting device, which is caused by the existence of controllability, thereby controlling the fl-op optical port, using the energy beam To illuminate the plane of the pupil plane projection optical continuation - the pattern arranged on the ,, through the 糸, first (after the straw is formed by the image), the jm φ ^ ~, the inspection, set the second optics The pattern is transferred on the second surface to effectively reduce the orthogonal line pattern transfer image on the body, thereby achieving good exposure. The P-images are good in line width difference between each other. In this case, the aforementioned light and shadow The wavefront aberration wave of the optical system is measured by the above-mentioned projection surface aberration measuring device. In the case of extension, the aforementioned third-order system uses the aforementioned wavefront aberration measurement to measure the amount of use of the device. In the case of a plurality of Chanek items, the above-mentioned two-dimensional optical characteristics are the above-mentioned second order::;:: the symmetrical component, the former rotationally symmetric component.褥 The component of the unordered component and the same order is called the ninth term of the 4th order 0 component. The above-mentioned rotationally symmetric component item is the fourth exposure 妒f spatial image measuring device of the present invention, and is measured; the line 2 wide measuring device can also include the projection image, and the aforementioned line width amount is just mounted on the surface. Each of the patterns also includes a photographing device, and photographs 20 1253105 to form an image formed on the object disposed on the second surface. In the fourth exposure apparatus of the present invention, the image forming state adjusting device is configured to adjust at least one of the at least one optical elements constituting the projection optical system, and to adjust the gas pressure in the partial optical path. Hey! The adjustment of the wavelength shift amount of the beam and the projection light of at least one of the pattern forming member and the object related to the pattern are at least one type of adjustment in the adjustment of the axial direction. The heart "the right ^1 point of view, is a prediction method, is to predict the characteristics of the pattern image through the projection system, which is characterized by including the prediction parameters according to the plural items (the system includes the use of the established formula And calculating the variation curve under the predetermined exposure condition by the projection of each of the aberration components obtained by expanding the wavefront aberration series of the system (refer to the predetermined projection through the projection optical system) The image of the pattern, the larger of the image, the change from the defocus amount of the better focus position, and the change curve is predicted based on the calculated amount of movement. When the pattern is transferred through the projection optical system, the pattern can be known. The size is based on the defocusing of the best focus position from the transfer position, indicating the variation curve of the variation (i.e., the wavefront aberration of the so-called CD-focus curve binocular optical system). Moreover, the projection optical system ^ wavefront aberration system uses a predetermined formula (for example, Chaneco polynomial) to advance the series expansion, thereby using a plurality of Chanek terms (aberration components) Can be decomposed. From the results of intensive research by the rabbit Ming and others, we can understand the value of the linear combination of the complex terms including the coefficients of the above-mentioned check/Rick terms (ie, the aberration components), 21 1253105 and The variation of the aforementioned variation pattern of the pattern image projected by the optical system (that is, the divergence | 闰 闰 ^, and the size of the pattern image as the coordinate system of each coordinate axis, the defocus amount direction and the silly lady a "parallel movement of the variation curve like the size direction" 'has a close relationship. Right according to the prediction method of the present invention, the relationship described above is utilized, and it is not necessary to use a lot, - 丄. Complex calculation of ten juice time The value of the linear combination of the imaging terms) is in the range of exposures; the aberrations are included in the (4) transparent optical system (in the established aberrations), Γη ^ ^ The pattern ^ ^ top, , and the fruit, can predict the pattern of the shirt (or transfer image) in a short time. In this case, it can further include the variation curve obtained. Like order The process of the number, under the condition of 1 set of exposure, assumes that before the previous forecasting process, in the above-mentioned, the simulation is to obtain the variation curve of the shape of the difference of the table mu n. Quantitative change:: In the case of the above, the above-mentioned prediction process is based on the linear combination of the known exposure conditions (the sensitivity of the quantity as the coefficients): :: = Defocusing the above-mentioned defocus amount direction Toughness ± 4 轫 轫 绿 绿 ' 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据The linear combination of the ten parties, the change of the direction of the magnitude of the change in the shape of the above-mentioned changes in the "1" of the bow, and the change in the direction of the change in the magnitude of the image. For example, "the movement of the change curve can be decomposed into the relevant defocus amount 22 12531〇5 : From: the movement of the curve to the direction of the defocusing axis, and the direction of the axis of the axis of J (the direction of the axis of the axis). 20% of the wavefront aberration of the projection optical system (1), with sensitivity By linear combination of various aberration components; : 丨 = multi-momentum. X, the direction of the axis of the image size changes ‘in the square of the component, there is sensitivity, and the amount of movement can be predicted by the aberration components::: raw, and s ’. , 7 In this case, the aforementioned prediction process is based on the former

::Pre-: ί: The linear combination of the difference r-squares, in the above-mentioned::, the direction of the change of the size of the aforementioned image under the condition of exposure, the difference between the aberration components that are different from each other and the second The linear combination of the objects calculates the amount of movement related to the aforementioned variation curve = change. The movement of the curve of the magnitude of the image in the direction of the size axis is not only the square of each aberration component, but also the intersection of the aberration components that are different from each other. Item:, feel 9, if further consideration of these intersections Linear combination of terms: In this case, the amount of movement in the direction of the size axis can be predicted with higher precision. In the prediction method of the present invention, the aforementioned higher order function is a function composed only of even order terms. In the prediction method of the present invention, the prediction process calculates a deformation caused by the wavefront aberration of the variation curve based on a linear combination of a plurality of items including the aberration components, respectively, based on the amount of movement and the deformation. In the case, the aforementioned variation curve can be predicted. In this case, not only the amount of movement of the variation curve can be calculated, but also the linear combination of the aberration components 23153105 can calculate the deformation of the variation curve of the wavefront aberration of the projection optical system, which can be higher. The mouth of the ._ cumulatively predicts the change curve. In the case of the above-mentioned prediction process, the variation curve obtained by the further scooping person approximates the process of the higher-order function, and under the exposure condition, the aforementioned projections are assumed to be two..., j^. The illusion is the change of the defocus amount. In the case of the social attack, the prediction system is ~w reversed and less R winter.

In the case of the installation of the private image, the projection optical system can be described in the shape of the actual aberration, and the variation curve of the pattern image with the shadow of the mountain 3 is calculated under the predetermined exposure conditions; the prediction 刍鼗' 疋The m spear king system obtains a high-order function (approximation of the movement curve moved according to the above-mentioned shift amount) and a difference function in the case of the variation of the fluctuation curve before the wavefront aberration occurs (the system represents the calculation by the aforementioned calculation process) The difference between the change curve function). In this case, the aforementioned calculation process is performed by simulation. Ben Maoming's prediction method is in the aforementioned prediction process, in the aforementioned wavefront

In the case of the variation of the aforementioned variation curve caused by the aberration, the higher-order function (the approximation of the variation curve of the movement of 4 μ π & 轫 in accordance with the amount of movement described above) and the difference function are obtained. When calculating the difference between the variation curve functions obtained by the process, the prediction process is based on the aforementioned aberration components (the square of each aberration component is described as the even number of the difference function under the pre- (four) exposure conditions. The sensitivity of the order term is linearly combined as the square of each coefficient, and the coefficient of the even-order term of the difference function is calculated. According to the aforementioned aberration components (the aforementioned aberration components are obtained under the aforementioned predetermined exposure conditions) The sensitivity of the odd-order function of the odd-order 24 1253105 is calculated as a linear combination of the coefficients, and the coefficients of the odd-order terms of the difference function are calculated. In this case, the coefficient of the even-order term of the difference function representing the deformation of the variation function has a sensitivity in the square of each aberration component when the wavefront aberration of the projection optical system is developed, and the image f component The linear combination of squares can predict this coefficient. Further, the coefficient of the odd-order term of the difference function can be predicted by linearly combining the components of the aberrations in the respective aberration components by the linear combination of the aberration components. In the case of the deformation of the variation curve, it is possible to perform prediction in a short time and with high precision by using a linear combination of aberrations including the wavefront aberration of the projection optical system. In a prediction method of the invention, the aforementioned formula is a Zernike polynomial, and the coefficients of each of the aberration components are described. According to the twelfth point of view, the ith evaluation method of the present invention evaluates the pattern image characteristics through the projection optical system, and the method includes the fact that the prediction process is one less than the effective field of view of the projection optical system. = Then point 'using the measurement method of the present invention, the projection optical system is described in the predetermined exposure bar Ui to predict the variation curve (representing the image of the predetermined pattern having the dot point, the image size pair is from the preferred 1 focal position) The variation of the defocus amount); and the evaluation process, the root; ^ #, +,, 营绿^ According to the prediction results, the characteristics of the predetermined pattern image are evaluated. According to the first evaluation method, if you can't predict the above-mentioned variation curve with respect to at least one point in the effective field of view of the projection optical system, it is possible to accurately predict the above-mentioned variation curve. According to the method, under the predetermined exposure condition, the 25 1253105 line passes through the predetermined pattern image projected by the projection optical system, so that the predetermined pattern image in the effective field of view of the projection optical system can be accurately evaluated according to the variation curve depth ' characteristic. In this case, the predetermined pattern is arranged corresponding to each of the plurality of measurement points in the effective field of view of the projection optical system, and the characteristic is a sum of the images in the effective field of view of the projection optical system. In the first evaluation method of the present invention, the predetermined pattern includes two lines (four)' on a plane perpendicular to the optical axis direction of the projection optical system; the slant is orthogonal to each other, and the prediction process can be performed in each The aforementioned line pattern, the aforementioned variation curve. j In this case, the above-mentioned evaluation method can evaluate the line width difference between the line pattern images in the above-described image. In this case, in the two measurement points, in terms of the aforementioned characteristics, it is possible to evaluate that the line widths of the two orthogonal line patterns caused by the difference are four. As for the evaluation method of the present invention, the two line graphs t are the same as the positive fathers of the opposite sides of the optical plane on the optical plane of the projection optical system, and the foregoing prediction process is performed. The case predicts the aforementioned change curve. Here, in the case of each of the above-mentioned line graphs, the line width difference of the above-described evaluation process is used as the image characteristics. What is the line width anomaly caused by the aberrations of each other? It can be evaluated mainly because of the characteristics of the U-image of the present invention. Adjusting the image through the projection optical system, and the adjustment method of the younger brother, the 'including:, forming state, which is characterized by the fact that the 26 1253105 process' is evaluated using the 帛1 evaluation method of the present invention: both: two optical systems The characteristics of the 疋 pattern image arranged by at least one measurement point in the effective field of view; and the adjustment system and the whole process process adjust the formation state of the predetermined pattern image by the projection light according to the evaluation result. 'Dry right according to the first S-circumference method, the present invention is used to evaluate at least the effective field of view of the projection optical system;: the predetermined pattern image characteristics, according to the evaluation results, before, κ, έ U through, the projection optical system

t (4) The state of formation of a given pattern image. Therefore, according to the evaluation result, the characteristics of the predetermined pattern image can be adjusted to the desired state. In this case, the adjustment process is used to adjust the amount of change of each of the aberration components per unit adjustment amount of the parameter: the adjustment state of the predetermined pattern image of the measurement point is adjusted. The sensitivity of the aberration component to the change of the size of the predetermined pattern image; and the deviation of the target value of each of the coefficient coefficients of the variation curve, which indicates the variation of the size of the sodium image and the defocus amount; The adjustment amount of the adjustment parameter adjusts the formation state of the predetermined pattern image based on the calculated adjustment amount. ^ The variation curve of the measurement point is affected by the aberration of the projection optical system and the like. If the aberration component is changed by adjusting the projection optical system, etc., the variation curve of the measurement point can be approximated to the desired curve (the target here, the invention uses 27 1253105, the adjustment parameter The amount of change of each of the aforementioned aberration components per unit adjustment amount; the sensitivity of each aberration component to the target image size determined under the predetermined exposure condition; the deviation of the target value of each of the coefficient coefficients of the variation curve The system indicates the change of the predetermined pattern image size to the defocus amount; the upper dissociation cancellation measurement point "the deviation of the variation curve from the desired curve is required = the t parameter (the adjustment parameter of the formation state of the 5-week pattern image) The adjustment is performed, and the formation state of the predetermined pattern image is adjusted according to the calculated adjustment amount, so that the formation state of the pattern image can be adjusted so that the variation curve of the pattern image size and the defocus amount approaches the desired fluctuation curve. In this case, it is necessary to form which curve is formed by the curve of the desired γ n 4 7 curve (the target), because the pattern is like the adjustment item and the value is $. For example, the foregoing evaluation process:: The price corresponds to the characteristic of the complex image in the effective field of view of each of the above-mentioned projection optical systems, and the adjustment process is such that the target value of the above-mentioned variational song @ gt; n Rth ^ ^ gate such as the η term coefficient is at the aforementioned measurement point The same is true. In this case, it is possible to improve the in-plane uniformity of the image in the effective field of view of the projected image. Also, the / _, +, and 疋 疋 patterns contain plural When the pattern is between the ^J丨 patterns, the target value of the previous number is compared with this case, and the line of the heart line is like the R&#; The fourth embodiment of the present invention is a fourth embodiment of the present invention. Through the projection optical system, the second image of the above-mentioned package is transferred to the object disposed on the second surface, and is characterized in that it includes: a surface finishing process, which is based on the use of the present invention. Prepare a method of dying, through the aforementioned ~ 糸,, charge, adjust a state in which the pattern image is formed; and a "transfer system" in which the circuit pattern is transferred to the object through the X-shirt optical system in a state in which the adjustment image is formed. - According to the fourth exposure method If you let the legal system through the projection 弁 έ Μ Μ 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知The gentleman u 4 road pattern is transferred onto the object, so the month b: ^ The circuit pattern is formed on the object with high precision. #畔2弟15 The point of view, the present invention is the second evaluation method, including "." a pattern image characteristic of a bezel and an over-projection optical system, characterized in that a process for acquiring wavefront aberration information of the projection optical system is acquired; "a process of projecting image information of the aforementioned pattern; and 杳,, S Γ t % # Checking the sensation of the sensation of the above-mentioned projection image (the use of the term item = the above-mentioned wavefront aberration series to expand the number of 淫 克 ^ 八 八 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Crossing the top of the night, 4_ ,, Said change in the characteristic properties of the image and 4) of the change to the plateau value characteristic pattern image. If the evaluation method is '2', the wave of the projection optical system can be obtained. The information about the pattern projection image is obtained. And, in the use of Chanek, the above-mentioned wavefront aberration series is shown in the number of 29,123,105 Zagnek items, in the interaction of the above-mentioned intentions, the combination of the two items, the test, ^, '(4) The change of the image characteristics, to Hu Jun ... grams of sensitivity to the aforementioned projection, gentleman Khan Yang said the characteristics of the pattern. That is, in the "Khan" method t, in the characteristics of the conventionally unconsidered characteristics of the shadow of the 扛 扛 々 々 々 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像The characteristics of the pattern of the above-mentioned pattern of the rice, the characteristics of the pattern, and the characteristics of the pattern are more accurate. In the case of two kinds of silly, when the pattern includes a line pattern, the image-forming characteristics include the line pattern. In the case of the 16th point of view, the second adjustment method of the present invention is a state in which the pattern image of the projection optical system is formed, and the evaluation process is performed by using the second evaluation method of the present invention. Evaluating the characteristics of the 疋 pattern image disposed at least at the measurement points in the effective field of view of the (4)th optical system on the opposite side; and the grading process is based on the foregoing evaluation result, adjusting the predetermined pattern through the projection system described above When the second adjustment method is used, the second evaluation method of the present invention is used to accurately evaluate at least one measurement point in the effective field of view of the corresponding projection optical system. According to the evaluation result, the it over-projection optical system 'adjusts the formation state of the predetermined pattern image. Therefore, the price of the pattern image can be adjusted optimally. In other words, the present invention is a five-exposure method in which a pattern on the i-th surface is transferred onto an object disposed on the second surface 30 1253105 through a projection optical system, and is characterized in that it includes an adjustment process. 'Adopting the adjustment method of the 57th application patent, adjusting the formation state of the pattern image through the projection optical system; and the transfer process, in the formation state of the adjustment image, through the aforementioned optical system The foregoing pattern is transferred onto the object. From the 18th point of view, the present invention is a program for performing prediction of pattern image characteristics by a computer through a slave shirt optical system, characterized in that

And linearly combining the plurality of aberration components obtained by the series expansion of the wavefront aberration of the projection optical system by using the equation, and calculating the relevant optical system through the projection optical system under the predetermined exposure condition The predetermined pattern image of the shirt indicates the wavefront aberration caused by the magnitude of the image on the variation curve from the best focus position: the defocus amount: the amount of movement is calculated by the computer described above. The amount of movement, to predict the prediction process of the aforementioned variation curve.

The -"^ type is installed in the computer, and the computer executes the above-mentioned various programs: This 'the prediction method of the present invention is executed by a computer. This is the same as silly =, the use of complex calculations that require the calculation of the time of the magic big: Lt fine by a very simple operation (to find the difference component = linear combination value), in the established Projection light in the aberration state = Under the given exposure conditions, the cd_ property can be predicted in a short time. According to the result, it is possible to predict the transfer of the pattern in a short time. In this case, before the aforementioned prediction procedure, assuming that the projection 31 1253105 optical system has no aberration, the computer is used to perform the variation curve (_ indicates The above image size changes to the aforementioned defocus amount) to approach the procedure of high yield whiteness. In this case, the predictive program causes the computer to execute the following procedure: based on the aforementioned aberration components (which are based on the predetermined exposure conditions, the sensitivity of each of the aberration components to the defocus amount is a linear combination of coefficients) for predicting the amount of movement in the direction of the defocus amount of the aforementioned variation curve; and | based on the aforementioned aberration components (which are under the aforementioned predetermined exposure conditions) The sensitivity of the component to the magnitude change of the image is linearly combined with the square of each coefficient to predict the amount of movement of the aforementioned change in the image size of the aforementioned variation curve. In the program of the present invention, the foregoing predicting program causes the computer to execute the following sequence, which includes a linear combination of the squares of the aberration components, and according to the foregoing items (which are different under the aforementioned exposure conditions) A program in which the cross-term of the aberration components is a linear combination of the change in the image size as a coefficient is used to predict the amount of movement of the aforementioned image size change direction of the aforementioned variation curve. In the case of the Spear King of this I, the high-order function is a function consisting only of even-order terms. In the private program of the present invention, the prediction program calculates the cause of the fluctuation curve based on the linear combination of the difference components of the difference component included in the above; and the waveform of the wavefront aberration as described above. Deformation 32 1253105 Status 'Enables the computer to execute the program for predicting the aforementioned variable curve. In this case, before the aforementioned prediction procedure, the computer executes the calculation process, and the history is evaded. Under the predetermined exposure conditions, it is assumed that the projection optical system | aberration is produced in, ..., 彳豕圭之In the case, the variation curve indicating the variation of the defocus amount indicating the aforementioned small pair is approached to the higher order function. In this case, before the aforementioned prediction step, a computer is executed to calculate the borrowing

Ding Jie & Preface 'The system is under the above-mentioned established wire-drawing parts, reading and M-internal aberration state of the above-mentioned investment. Ten ^ Yiyi shirt first learns the system, and calculates the relevant projection pattern like 'the aforementioned Like the big * on the aforementioned scattered; t amount of change. The prediction material is calculated by the computer to obtain the difference between the movement amount of the high-order letter and the movement amount of the eigen 伽, 伽 ^ 糸 & & 动 动 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与The function of the part, the right or the right, the +, is used as a procedure for describing the variation of the aforementioned curve caused by the wavefront aberration.

In the absence of such a case, the aforementioned prediction procedure is performed by the aforementioned computer, and T is based on the description of each aberration component (the square aberration component is squared to the even-order term of the difference function under the predetermined exposure conditions described above). The sensitivity is a linear combination of the squares of the coefficients to predict the coefficients of the even-order terms of the aforementioned difference function; and the aberration components (the aforementioned aberration components under the predetermined exposure conditions described above) The linear combination of the sensitivity of the odd-order terms of the difference function as the coefficients is used to predict the program of the odd-order order of the difference function of the front ϋ #, +, and 木顶州. According to the program of the present invention, the predetermined formula is a polynomial, and the aberration components of the above-mentioned 33 1253105 are the coefficients of the respective Zernike terms. The program of the present invention can be used for the purpose of selling, etc., under the condition of being recorded on the information recording medium. Therefore, if viewed from the 19th page, then the program of the program is the information recording medium read by the recorded computer. Further, when viewed from the 20th point of view, the present invention relates to a method of manufacturing an exposure apparatus which is an exposure apparatus that transmits a pattern of a hood to an object through projection optics; The process of the projection optical system is adjusted by any of the methods of adjusting the optical systems of the first to third (fourth) of the present invention. Further, in the lithography process, the fourth to fourth exposure devices of the present invention are used. By performing exposure, the pattern can be formed on the object with high precision: thereby, it is possible to manufacture a higher-complexity micro-component at a high yield, and the productivity can be improved. Similarly, in the lithography process, the invention is used.丨 ~ The fifth exposure method - the method of exposure, whereby the pattern can be formed on the object with high precision, thereby enabling the production of higher-capacity micro-components at a high yield, thereby improving productivity. The present invention is a method of using any of the devices of the first to fourth exposure apparatuses of the present invention, or a method of manufacturing the element using the m 5 exposure method of the present invention, from another viewpoint.

[Embodiment] Hereinafter, a first embodiment of the present invention will be described with reference to Figs. 1 to 12, and a schematic configuration of an exposure apparatus 1 according to an embodiment of the present invention is shown. The exposure apparatus 100 is a reduction projection exposure apparatus (so-called scanner) using a stepping scanning method of a pulsed laser light source in an exposure light source (hereinafter referred to as a "light source"). The exposure apparatus 4 100 is provided with an illumination system. (This is composed of the light source 16 and the illumination optical system 12), the reticle stage RST (which acts as a hood, and holds the reticle as a hood from R, by the illumination system: The exposure of the energy beam is illuminated by the illumination light EL, and the projection optical system pL (which projects the exposure illumination EL emitted from the reticle R onto the wafer as the object (image surface)), the wafer The WST (holding wafer w), and these control systems. For the aforementioned light source 16, a KrF excimer laser (output wavelength of 248 nm) is used here. Also, as for the light source 16, A pulsed ultraviolet light source in the vacuum ultraviolet field such as an output I field (output wavelength of 157 nm) or an ArF excimer laser (output wavelength of 193 nm) is used. The foregoing light source 16 actually accommodates an exposure device (by each of the illumination optical systems 12) Components and reticle stage rST, projection The chamber n of the optical system and the wafer table WST is disposed in a service room having a lower cleanliness than the installed spring clean room, and is transmitted through at least a portion of the package 3 without the optical light for transmission. The system, which is called an optical system for adjusting the optical axis of the beam matching unit, is connected to the chamber n. The light source 16 controls the output of the laser beam LB by an internal controller based on the control information ts from the main control device 50. On/off, energy of one pulse of the laser beam lb, cover frequency (repetition frequency), center wavelength and spectrum half value width (wavelength width), etc. The illumination optical system 12 includes: beam shaping illuminance uniformization light 35 1253105 System 20 (including a cylindrical lens, a beam amplifier (none of which is shown), an optical product/splitter (homogenizer) 22, etc.), an illumination system aperture plate 24, an i-th relay lens 28A, and a second relay lens 28B, fixed reticle blind 3〇A, movable reticle blind 30B, optical path bending mirror μ and concentrating lens 32, etc. Also, for optical integrators, it is possible to use a fly-eye lens or a rod type Integrator In the present embodiment, a fly-eye lens is used as the optical integrator 22, and therefore, it is hereinafter referred to as a fly-eye lens 22. The beam shaping/illuminance equalizing optical system 2 is configured to transmit through The light transmitting optical system (not shown) is connected to the light transmitting window 17 of the chamber 11. The beam shaping/illuminance equalizing optical system 20, for example, uses a cylindrical lens or a beam amplifier to transmit the light source 16 through the pulse. The light beam is shaped by the cross-sectional shape of the laser beam lb incident through the window 17. Further, in the beam shaping/illuminance equalization optical system 20, the laser beam 1B is passed through an energy coarse adjuster (not shown). , with ND filter, can use a complex phase to change the transmittance in a complex phase), a plurality of diffractive optical elements that can be exchanged, and a movable 沿着 along the optical axis of the illumination optical system (cone The optical unit (not shown, including at least one of the zoom optical systems) reaches the optical integrator 22. The optical unit can change the intensity distribution of the illumination light on the incident surface when the optical integrator 22 is a fly-eye lens. When the optical integrator 22 is an inner reflection type integrator, the illumination light can be changed to the incident surface. The angle of incidence of the illumination light on the pupil plane of the illumination optical system is changed to the size and shape of the secondary light source of the illumination light, that is, the illumination condition of the reticle R is changed. In addition, the illumination ' 36 1253105 unit is trying to suppress the loss of light amount when changing the lighting strip. Further, the fly-eye lens 22, which is located at the end of the beam on the inner side of the beam-shaping optical system 2, is a τ田 recognize a ', and the illuminating reticle R is illuminated with a uniform illuminance distribution. By the above-mentioned cross-sectional shaped makeup, the laser beam of the illumination optical system 12 is intruded, and the light-emitting side of the illumination optical system 12 is densely arranged. A surface light source (secondary light source) composed of a point light source (light source image). Hereinafter, the laser beam emitted from the secondary light source will be referred to as "illumination light EL". Further, in the vicinity of the exit side focal plane of the fly-eye lens 22, a plurality of aperture stops (for example, an aperture stop (_-like aperture) formed by a general circular opening) may be disposed at substantially equal angular intervals; An aperture aperture (a), an alpha aperture configured to reduce the coherence coefficient (σ) formed by a small circular opening; an aperture aperture (ring aperture) for ring illumination and a variant light source method An aperture opening of an illumination system formed by a disk-shaped member such as a deformed aperture stop formed by eccentrically arranging a plurality of openings. In this case, the aperture plate of the illumination system is used simultaneously with the optical unit described above, and any aperture aperture can be selectively set on the optical path of the illumination light EL, thereby illuminating the illumination optical system The light distribution of the illumination light on the surface (the size and shape of the secondary light source) enables the illumination condition of the reticle R to be changed. In particular, even if only the illumination conditions that cannot be set by the optical unit described above can be used, the aperture of the illumination system can be set, the amount of light loss can be reduced, and the illumination condition can be easily set. A relay optical system (by the first relay lens; 37 1253105 2 8 A and the second relay lens) is disposed on the optical path of the illuminating EL from the fly-eye lens 22 (or the aperture plate of the illumination system) 2 8 B, the relay lens is between the fixed reticle blind 30A and the movable reticle blind 3 〇 B). The fixed reticle blind 30A is disposed from the conjugate surface facing the pattern surface of the reticle r, and is slightly defocused to form a rectangular opening of the IAR of the rectangular illumination field on the predetermined reticle R. Further, in the vicinity of the fixed reticle blind 30A, a movable target having a variable opening portion is disposed corresponding to the position and width of the scanning direction (the γ-axis direction 'that is, the left-right direction in the paper surface in the first drawing). The wire curtain 3〇B, when starting and ending the scanning exposure, further restricts the illumination field through the movable reticle blind 3〇b, thereby preventing unnecessary exposure. Further, the movable reticle blind 30B has a width corresponding to the non-scanning direction orthogonal to the scanning direction (the y-axis direction 'that is, the direction orthogonal to the plane of the paper in the _1 diagram), and the width of the opening is also variable, The pattern of the reticle R transferred onto the wafer adjusts the width of the non-scanning direction of the illumination field. On the optical path of the illumination EL behind the second relay lens 28b constituting the relay optical system, the optical mirror m is set to reflect the illumination light m that has passed through the second relay lens 28 toward the reticle. r), in the optical path of the illumination light rainbow behind the curved mirror ,, the focus lens 配置 is arranged, the face of the fly-eye lens 22, the movable marking wind... and the pattern surface of the titanium ruler are set The light (10) ', and the pupil plane formed by the exit side focal plane of the second 22, and the Fourier plane of the projection optical system PL (the exit pupil plane) are set to optically (Kohler) illumination system. , already, if it is used, then from

A brief description of the illumination system constructed in this manner 38 1253105 The laser beam LB of the light source 16-pulse illumination is incident on the beam shaping illuminance uniformizing optical system 20, and the cross-sectional shape is shaped and the like, and then incident on the fly-eye lens 22. Thereby, the secondary light source is formed on the exit side focal plane of the fly-eye lens 22.

The illumination light eL emitted from the secondary light source reaches the fixed reticle blind 3A via the first relay lens 28A, and further passes through the opening of the fixed reticle blind 30A and the movable reticle blind 3〇 B and the second relay lens 28B, the optical path is bent vertically downward by the mirror M, and the reticle 纟RST is illuminated by the illuminating lens 32' with a uniform illuminance distribution.

The rectangular illumination field iar on the reticle R that is held. / On the aforementioned reticle stage RST, the reticle r is loaded and sucked and held by an electrostatic chuck (or vacuum chuck) of a non-primitive element. The reticle 纟 仪 = = = 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图-々诺au The fine axis of the goods is ιχ~έ The driving part is perpendicular to the optical axis AX-induced) of the optical system with the lighting system

The month b姣 small drive (including the z-axis circumference, can be fixed with the specified fixed rotation), sub-speed drive. "The direction of the direction (here, the Y-axis direction) is formed at the position of the reticle stage RST. The transmission is set to or below, and is called "the reflection surface of the two" by the laser interference of the reticle. The meter (.m. interferometer) 54R, for example, the degree of resolution is always 乂〇·5~lnm sub-detection. From the position of the reticle interferometer RST | ^ t 54R reticle, supplied to the main body outside the body room 11 39 1253105

The control reticle control unit 50 is driven in accordance with the position of the reticle stage RST. The main control device 50, the information, passes through the reticle stage drive unit (not RST. In January, only a few of the prisoners use the light source and t to distinguish. That is, when the KrF excimer is forgotten + strong, flute When shooting, ArF excimer lasers can be crystallized or blended with synthetic quartz or f-stone when used as a light source; etc., but when ... 2 lasers, they must be crystallized with fluoride such as fluorite, and doped Fluorine quartz or the like is formed.

The aforementioned projection optical system PL, for example, uses a telecentric contraction on both sides. The projection magnification of the projection optical system PL is, for example, ι/4 1/5 or W6#. Therefore, as described above, if the illumination area IAR on the rod* piece R is illuminated by the illumination aperture, the projection pattern, the PL, and the circuit pattern of the reticle r in the illumination area IAR are controlled. The illuminating field (exposure field) IA of the photolithographic EL formed on the wafer w shared with the IAR of the illumination field is reduced.

In the case of the projection optical system PL, a refractive system (only a plurality of sheets, for example, a refractive optical element (lens element) of 10 to 20 degrees) is formed in a plurality of lens elements 13 constituting the projection optical system PL. The lens elements 13l, U2, Π3, 134, 135 of the plurality of sheets on the object side (the reticle R side) (for the sake of simplicity of explanation, here are 5) are externally controlled by the imaging performance controller 48' A movable lens that can be driven is formed. The lens elements 1 3 to 1 35 are respectively held by a lens holder having a double structure (not shown) and held in the lens barrel. These 1 3 i to 1 3 5 are respectively held by the inner lens holder. The inner lens holder is separated by an illuminating element (not shown), for example, 40 Ϊ 253105 [π: for the outer lens holder, the three points are supported by the three points in the direction of gravity: some of the driving elements independently adjust the applied voltage, This formation enables ''brothers 3丨~13s to be in the z-axis direction (the direction of the projection optical system vehicle) and the direction of the opposite direction of the light f χ γ plane (ie, the X-vehicle is rotated by the surrounding direction (axis Direction of rotation (0y) The other lens elements 13 are transmitted through a normal lens holder, and are not limited to the lens elements 131 to 135, and can also be configured to drive the image > Correct the configuration of the projection optical system PL

Don't: near or image side lens, or projection optical system PL t aberration, special 糸 亥 非 非 非 对称 。 。 。 。 。 。 。 。 。 。 Further, the degree of driving of these optical elements (the direction in which they can be moved) is not limited to three, and may be more than one. W 4 4 In the vicinity of the pupil plane of the projection optical system PL, light (four) light source 15 which can continuously change the numerical aperture (NA) in the range is provided. For example, a so-called rainbow aperture is used to open the π aperture 15. The aperture aperture aperture 15 is controlled by the main control unit 50.

The field uses KrF excimer laser light and ArF excimer laser light to make Zhaoming T7 T l ^ #日守' can also use fluoride crystals such as fluorite or other synthetic quartz synthesized as the projection optical system PL. In the case of the use of 匕 laser light, the projection optical system P1 is such that the material of the lens is all crystallized using fluoride such as fluorite or the fluorine-doped >5 〇日目W system is not shown The wafer holder shown in the figure is held on the wafer table WST by electrostatic adsorption 'vacuum adsorption' or the like. 41 1253105 Wafer table WST is placed under the projection optical system PL, and is used by a wafer stage drive unit (which is composed of a linear motor or a voice coil motor (VCM)) (not shown). In-plane direction and z-axis direction drive,

The tilt direction of the XY plane (which is the direction of rotation around the X-axis and the direction of rotation around the Y-axis (0y)) can also be slightly driven. That is, the wafer table wst can move not only the scanning direction (Y-axis direction) but also a plurality of irradiation fields on the wafer w to relatively move the respective exposure areas IA to perform exposure, and the configuration can also be orthogonal to the scanning direction. The non-scanning direction (the x-axis direction) is moved, thereby repeating the steps of scanning and exposing the respective illumination areas on the wafer W and moving to the acceleration start position for the next illumination exposure. Scan action. The position in the XY plane of the wafer table WST (including the rotation around the z-axis (0z)) is transmitted or formed on the reflective surface of the wafer table wst by a wafer laser interferometer (hereinafter, abbreviated as The "wafer interferometer" 54W, for example, is detected at any time with a resolution of about 5 to 1 nm. The wafer interferometer 54W includes a plurality of multi-axis interferometers (having a plurality of length measuring axes). With these interferometers, the energy measurement wafer table WST rotates (0 ζ φ ywing, 0 y rotation ( Pitching) (rotation around the Y-axis) and θ X rotation (r〇lling) (rotation around the x-axis). The position information (or speed information) of the wafer table WST detected by the wafer interferometer 54W, It is supplied to the main control device 50. The main control device 5 controls the position of the wafer table WST through the above-described position information (or speed information) of the wafer table WST through the wafer table drive unit not shown. On the wafer table WST, a base FM formed by a reference mark such as a reference mark such as a baseline measurement is formed in the alignment system ALG 42 to be described later, and the surface of the wafer is fixed to substantially the surface of the wafer W. The same height. Also 'wafer station WST + Y you 丨 α】 with the same seven Μ and the total - Zhuang (the younger side of the paper on the right side of the side) is the women's clothing as a loading and unloading silly Bodhi heart-style learning characteristics measurement The wavefront aberration measuring device 8〇 of the device. The wavefront aberration measuring device 80, as shown in Fig. 2 The present invention includes a hollow frame 82, a wenguang optical system 84 (consisting of a plurality of optical elements, the photonic element is disposed inside the frame in a predetermined relationship), and a j-light portion 86 (arrangement) The frame body 82 is formed of a member (an L-shaped cross section and a space formed therein), and is formed at the uppermost portion (the end portion in the +ζ direction). The circular opening 82a is viewed in plan view (from above) so that light from above the frame 82 is incident into the internal space of the frame 82. Further, in order to cover the opening 82a from the inner side of the frame 82, a glass cover 88 is provided. On the upper surface of the cover glass 88, a light-shielding film having a circular opening is formed in the center portion by vapor deposition of a metal such as chrome, and the light-shielding film is used to measure the wavefront aberration of the projection optical system PL. The light that is not required from the surroundings is incident on the light receiving optical system 84. The light receiving optical system 84 is called the objective lens 84a and the relay lens which are disposed from the top to the bottom of the glass cover 88 inside the frame 82. 84b, curved mirror 84c, collimating lens 84d The curved mirror 84c is disposed on the X side of the curved mirror 84c and the microlens array 84e. The curved mirror 84c is set at a 45° slope, and the curved mirror 84c is used to vertically and downwardly face the objective lens 84a. The optical path of the light entering is curved toward the collimator lens 84d. Further, the optical members constituting the optical system for receiving light 84 are internally fixed to the wall of the frame member 82 at 43 1253105', and are not shown. The plurality of small convex lenses of the microlens array 84e are arranged in an array in a plane orthogonal to the optical path. The light receiving unit is overcharged by a light receiving element (consisting of a two-dimensional CCD or the like). It is composed of an electrical circuit such as a transmission control circuit. The light-receiving element is incident on the objective lens 84a, and has a sufficient area since it receives all the light beams emitted from the microlens array 84e. Further, the measurement data of the light receiving unit 86 is transmitted through a signal line not shown or wirelessly, and is output to the main control unit 5〇.

The above-described wavefront aberration measuring device 80 is used, whereby the measurement of the wavefront aberration of the projection optical system PL can be performed by the body (i.e., the state in which the projection optical system PL is assembled in the exposure device). Further, a method of measuring the wavefront aberration of the projection optical system PL using the wavefront aberration measuring device 80 will be described later. In the exposure apparatus 1A of the present embodiment, a multifocal position detecting system (hereinafter simply referred to as "focus detecting system") of an injection system is provided in the first embodiment. The focus detection system is composed of an illumination system 60a (having a light source that is controlled to be turned on/off by the main control device 50, and is formed on the surface of the projection optical system pL, and is irradiated from the oblique direction on the optical axis AX to form a plurality of needles. The aperture or slit image is an imaging beam, and the light receiving system 6〇b (the reflected beam of the surface of the wafer W that receives the imaging beams). Further, the detailed configuration of the multi-point focus position detecting system similar to the focus position detecting system (60a, 60b) of the present embodiment is disclosed, for example, in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No., the disclosure of the above-mentioned publication and the U.S. Patent is incorporated herein by reference. 44 1253105 / Again, the above-mentioned bulletin and the multi-point focus position detection system described in the US #利利's not only detect the position of the wafer w, but also in the field of exposure ia = f is set in the non-scanning direction. Point, respectively, with the projection light + system PL optical axis a X bearing - seven a / ▽ + + 仃 direction (Ζ axis direction), and has the function of reading the wrap of the wafer w in the scanning direction, but even The shape of the light beam that does not have these work σ and is illuminated by the illumination system 60a may be a parallelogram or other shape. The main control unit i 5G is a focus shift signal (defocus signal) from the light receiving system 1 during scanning exposure, for example, based on the s-curve signal '·, , , to make the focus shift zero or become the depth of focus. The wafer position drive unit (not shown) controls the z position and the XY plane of the wafer %: This performs auto focus and automatic leveling. Further, the main control device 5. (60 '6:? Wave: When measuring the aberration, use the focus position detection system L two-way wavefront aberration measurement to measure the position and the alignment of the Z position of 8〇. At this time, Yunyun φ, The slanting measurement can be performed. The wavefront aberration measuring device 80 + the light 4 is set to 100. The alignment system ALG is provided with the off-axis mode. The off-axis (°ff_aX1S) mode alignment A ALG is used in the crystal The sign and the measurement of the crystal Ew on the WST of the round table. The alignment system AW: Lu, column, is the detection beam of the wide band that will make the photoresist on the wafer not sensitive. The object § is used to image the object mark on the light-receiving surface using the photographic element ((10) or the like) from the reflected light of the object mark. The image is processed using image processing for outputting these photographic signals; 1253105 FIA (Field Image Alignment) system sensor. Further, not limited to the FIA system, it is of course also possible to use the alignment sensor alone or in a suitable combination, which is to illuminate the object mark with coherence detection light. Detecting scattered light or diffracted light generated from the object mark, interference is detected from the object Lü Ji 5 Two diffracted lights (for example, the same order) are generated. Further, although the exposure apparatus 100' of the present embodiment is omitted, a pair of reticle alignment detecting systems are provided above the reticle R. It is composed of a TTR (Thr〇Ugh The Reticle) alignment system that uses an exposure wavelength (through the projection optical system PL, the reticle mark on the reticle R and the corresponding reference mark plate). In the case of these reticle alignment detection systems, for example, the same composition as disclosed in U.S. Patent No. 5,646,413, the disclosure of which is incorporated herein by reference. The domestic law of the designated country or the selected country of choice. The second case refers to the above-mentioned bulletin and the disclosure of the US patent as part of the description of this specification. The control system in Figure 1 is mainly controlled by the aforementioned main control. The main control device 50 is constituted by a workstation (or a microcomputer, a CPU, a ROM, a RAM, etc.), and controls the entire device in addition to the various control operations described above. Master control example In order to perform the exposure operation, for example, the step of the whole WST irradiation, the exposure timing, etc.] the daily W port and the 'main control device 50, for example, the connection memory is composed of a hard disk), and the input device (eight systems)匕, which is composed of a keyboard, a mouse, etc., and a display device such as a CRT display (or a liquid crystal display), and the main control device 50 is connected to a working personal computer or the like through a communication network such as a LAN. Computer 46. In the simulation computer 46, the imaging simulation software (i.e., the imaging simulator) set by the optical model of the ping 100 is exposed.

The method of measuring the wavefront 4f of the exposure apparatus 100 performed during maintenance or the like will be described. Further, in the following description, the image of the light receiving optical system 84 in the wavefront aberration measuring device 8 is considered to be small enough to be ignored for the sake of simplicity. In the normal exposure, the wavefront aberration measuring device 80 is detached from the wafer g WS^' at the time of measuring the wavefront, firstly, by the operator or the lancer, etc. (hereinafter, referred to as "job (etc.), the operation of mounting the wavefront aberration measuring device 8G on the wafer table WST. t When installing the Pomao aberration measuring device 80' When measuring the wavefront, the wavefront aberration measuring and accumulating 80 is fixed in the predetermined stroke in order to cover the moving stroke of the wafer table. The reference plane (here, the surface on the +γ side).

After the above installation is completed, the operator inputs the response command to start the measurement, and the main control device 50, the wavefront aberration measuring device 8 (for positioning under the ALG system) Wafer drive (4) (^), the main control device 50 detects the wavefront aberration amount (4) by adjusting the ALG to adjust the alignment mark according to the detection result and the wafer at this time. The measured value of the interferometer 5 turns, the position of the registration mark is calculated, and the correct position of the wavefront aberration measuring device 80 is obtained. Moreover, the position of the measuring wavefront aberration measuring device 8〇47 1253105 is measured. Thereafter, the main control unit 5 performs the measurement of the wavefront aberration as described below. First, the main control unit 50 is formed by a ten-hole pattern by a reticle carrier (not shown). The measurement reticle (hereinafter referred to as "needle reticle") is carried on the reticle stage RST. The pinhole reticle forms a pinhole at a plurality of points on the / pattern surface (roughly Become the ideal point source, produce the reticle of the spherical wave pinhole. Also, for example, the center is Αχ coincides with the optical axis of the projection optical system PL, the pinhole reticle is set when the sheet, a plurality of

The pinhole system is disposed in the illumination field IAR Θ, and the projection image system is formed in the field of view of the projection optical system PL to measure the complex point of the wavefront aberration (the first to the nth measurement points to be described later).

Further, in the pinhole reticle used herein, a plane of expansion or the like is provided thereon, and the light from the pinhole pattern is distributed substantially in the pupil plane of the projection optical system PL, whereby the projection optics are used. The overall surface of the system and the pL's light surface is the same as the measurement of the wavefront aberration. Further, in the present embodiment, since the aperture stop 15 is provided in the vicinity of the pupil plane of the projection optical system PL, it is substantially the aperture plane aberration measured by the aperture stop 丨5. After seeing and carrying the pinhole reticle, the main control device 5G uses the aforementioned reticle alignment detection system to detect the aligning mark formed on the pinhole reticle, and according to the detection result, the pinhole mark The line is aligned to the established position. Thereby, the center of the pinhole reticle is substantially identical to the optical axis of the projection optical system pL. Then, the main control unit 50 supplies the control information Ts to the light source 16 to cause the laser beam LB to emit light. Thereby, illumination from the illumination optical system 12 is applied to the pinhole reticle. And 'from the plurality of pinhole reticle sheets, the light emitted from the pinhole passes through the projection optical system PL, condensed on the image plane, and the pinhole image is imaged on the image plane. Next, any pinhole of the main control device 50 on the pinhole reticle (hereinafter referred to as the eyelet hole) is imaged at an image point, in order to coincide with the approximate center of the opening 82a of the wavefront aberration measuring device 80, The wafer monitor WST is moved through the wafer stage drive unit (not shown) while monitoring the measured value of the wafer interferometer 54W. At this time, the main control device 5 使 based on the detection result of the focus position detecting system (60a, 60b), on the image plane of the pinhole image imaging, causes the top surface of the glass cover 88 of the wave surface aberration measuring device 80 to be The wafer table WST is slightly driven in the Z-axis direction by a wafer stage driving unit (not shown). At this time, the tilt angle of the wafer table WST is also adjusted as needed. Thereby, the image beam of the eyelet hole is transmitted through the center opening of the cover glass 88, and is incident on the light receiving optical system 84, and the light is received by the light receiving element constituting the light receiving portion <%. More specifically, a spherical wave is generated from the eyelet hole on the pinhole reticle. The spherical wave transmits through the projection optical system PL and the objective lens (4) (the light receiving optical system 84 constituting the wavefront image difference measuring device 80). The relay lens _, the mirror (4), and the collimation center 84d become parallel beams, and are irradiated to the microlens array 84e, whereby the pupil plane of the projection optical system pL is relayed in the microlens array J 84e ' and divided. Further, each of the lens members of the microlens array 84e is condensed into a light receiving surface of the lens member, and a pinhole image is formed on the light receiving surface. This temple right technology shirt optical system PL is the ideal optics without wavefront aberration 49 1253105 system, then the wave surface of the PL optical plane of the projection optical system becomes the wavefront of the phase (here, the plane), and as a result, the microlens is injected. The parallel beams of array 84e become plane waves, which are ideal wavefronts. In this case, as shown in Fig. 3A, a point image (hereinafter also referred to as "point") is formed at a position on the optical axis of each of the lens elements constituting the microlens array.

However, in the projection optical system PL, generally, the wavefront of the parallel beam incident on the microlens array 84e is shifted from the ideal wavefront due to the wavefront aberration, according to the offset (i.e., the wave faces the slope of the ideal wavefront) As shown in Fig. 3B, the position of the image at each point is shifted from the position on the optical axis of each lens element of the microlens array 84e. In this case, the reference from each point: (the position on each lens element (10)) The offset of the position corresponds to the slope of the wavefront. Further, the light (the spot beam) incident on each of the light collecting points on the light receiving element of the light receiving unit 86 is photoelectrically converted by the light receiving element, and the photoelectric conversion signal is used. The main control device 50 calculates the imaging position of each point based on the photoelectric conversion signal, and calculates the positional offset using the calculated result and the known reference point position data.

Bu △ 々)' is then stored in RAM. At this time, in the main control unit 5, the measured value (Xi, Yi) of the wafer interferometer 54W at this time is supplied. As described above, if the wavefront aberration measurement S 80 is formed by the image point of one of the eye-hole images, and the measurement of the spot image position is completed, the main control device 50 is at the imaging point of the next pinhole image. The wafer table WST is moved so that the approximate centers of the openings 82a of the wavefront aberration measuring device 80 coincide. After the end of the movement, in the same manner as described above, the light source LB is emitted from the light source i 6 by the main control unit 5, and similarly, the main control unit 5 〇, 50 ! 2531 〇 5 Imaging position. Then, the same measurement is performed sequentially at the imaging points of the other pinhole images. In addition, one meter of the crop, in the completion of the "work-injection set 5" ^ RAM towel, the positional offset data (△ f, △) of the imaging points of the aforementioned needles (four) and the coordinate data of each imaging point (the system When measuring the imaging point of each pinhole image, the measured value of the wafer interferometer 54W (χ, Y)]

. Also, 'in the above measurement', the illumination light EL can be irradiated to all the pinholes, or the movable reticle blinds 3〇B can be used. For example, in each pinhole, the illumination field on the reticle is changed. Position and size, etc., use illumination light π to illuminate only the eye pinholes or parts of the eye on the reticle (at least including the eye hole). Next, the main control device 50 according to the positional deviation data of the imaging points of each pinhole image stored in the RAM (Δ Δ Δ β ) and the coordinates of each imaging point ′ according to the principle described below, corresponding to the pinhole image The imaging point, that is, the wavefront (wavefront aberration) of the third measurement point (evaluation point) to the ηth measurement point (evaluation point) in the field of view of the projection optical system PL, here, , the program is used to calculate the coefficient of the (3) gram term of the stripe Chanek polynomial (hereinafter, s% is "Check > 多项 polynomial") of the formula (3) (for example, the coefficient of the first term) Hey, ~ coefficient 37 of item 37?). In the present embodiment, the stripe Chanek polynomial is used as the Chanek polynomial, and the following is explained. ^The embodiment is based on the above-mentioned positional shift (Δ △ Δ), and the operation is performed according to the conversion formula ', thereby obtaining the wavefront of the projection optical system pL and the positional shift (Δf, Δ7?) The reflected wave faces the slope value of the ideal 51 1253105 wavefront, and conversely, the wavefront can be restored according to the position ', U occupies, △ ′). Further, from the above-described positional deviation (Δ △ 々 々) and the physical relationship with the wavefront, it can be seen that the wavefront of the present embodiment is second, and ττ Wang is well known.

Shack-Hartmami wave surface calculation principle. Next, a method of calculating the wavefront based on the above-described positional shift will be briefly described. ' ' As described above, the positional deviation (Δ $, △ corresponds to the slope of the wavefront, the positional deviation (△ I:, △ ”) is integrated and buried, and the _ accumulated tool is used to determine the shape of the wavefront ( Strictly speaking, it is the offset from the reference plane (ideal wavefront). The wavefront (which is the offset wavefront from the reference plane) is w(x, y) and the scale factor is k. The relationship between (2) and (2) is established. △ Bu Ling...(1) .(7)

Since dW is still difficult to integrate, it only indicates the wavefront slope of the point position, so the surface shape ', and the number expansion' is suitable for this type. In this case, the series is selected as the orthogonal system. The Chanek polynomial is suitable for the progression of the axisymmetric plane, and the circumferential direction is a trigonometric series expansion. In other words, if the wave surface W is expressed by the polar coordinate system (ρ, Θ), it can be developed as shown in the following equation (3). 52 1 Because of the orthogonal system, it is possible to independently determine the coefficient z" use an appropriate value to limit the i-system to perform some kind of filtering and wave. For example, if the fi(p) of the first to the 37th items (fcp is regarded as the independent variable 1253105 = the radial polynomial) is exemplified with the coefficient, the following list i is shown. However, the 37 items in Table 1 are in the actual Chanek polynomial, which is equivalent to the 49th item. {In this period, the item i = 37 (item 37) is used. That is, in the present U, the number of the polynomial items is not particularly limited. Z!z2 Z3 Z4 Z5 Z6 Z7 Z8z9 Zio zzzzzzzz pcosO psin6 2p2-\ p 2cos2 Θ p 2sin2 Θ (3 p 3-2 /9 )cos 0 (3 p 3-2 p )sin Θ 6 p 4-6 p 2 +lp 3cos3 Θ p 3sin3 Θ (4p4-3p2)cos0 (W)sin0 (10 p 5-12 p s+3 p )c〇s 0 (l〇p5-12p3+3p)sin0 20 p 6-30 p 4 +12 p 2-lp 4cos4 Θ p 4sin4 Θ 1 Z19 ^20 ^21 Z22 z; zzz

Fi '23 '24 '25 '26 Z27 (5 p -4 p 3)cos3 Θ (5 p 5-4 p 3)sin3 Θ (15 p 6-20 p 4+6 p 2)cos 0 (15 p 6 -20 p 4+6 p 2)sin Θ (35 p 7-60 p 5+30 p 3-4 p )cos Θ (35 p 7-60 p 5+30 p3-4 p )sin Θ 70p8-140p6+ 90p4-20p2+lp 5cos5 Θ -28-28 z; Z30 Z31 Z32 Z33 Z34 z '29 35 Z36 z 37 p 5sin5 Θ (6p6-5p4)cos4 0 (6p6-5p4)sin4 0 (21p7-3〇p5+l〇 P3)cos3 0 (21p7-3〇p5+l〇p3)sin3 0 (56 p 8-105 p 6+60 p4A0p 2)cos2 Θ (56 p 8-105 p 6+60 pUOp 2)sin2 0 (126 p 9-280 p 7+210 p 5-60 p 5+5 p )cos 0 (126 p 9_280 p 7+210 p 5-60 p 5+5 p )sin 0 252 p 10-630 p 8+560 p 6 -210 p 4+3〇p 2-l 924 p 12-2772 p 10+3150 p 8-1680 p 6+420 p 4-42 p 2+l

In fact, the differential system is adjusted for the above-mentioned positional offset and must be performed for the micro-coefficient. The polar coordinate system (XI eQs0, so Sln 0) is expressed by the following equations (4) and (5). , P D d d d P P δθ sin0 • (4) • (5) Since the differential shape of the Chanek polynomial is not an orthogonal system, the adjustment must be 53 1253105 method to perform a point image imaging point information (offset) Since the number of pinholes is the corresponding projection optical system of the coffee system, and the number of measurement points (evaluation points) is seen in the present embodiment, in order to simplify the description, for example, let n be 33), the above formula The number of programs is the corresponding optical aberration of each of the observations of the 2nd (7). Moreover, the low-order term (1 small item) roughly corresponds to the Seidel aberration. The wavefront aberration of the projection optical system PL can be obtained by using the multi-formation. Xi

镰 dragging the above 3, /, to determine the calculation step of the conversion program, according to the 壬, 运, the different processing, thereby obtaining the i-th measuring point to the n-th measuring point in the field of view of the aperture of the corresponding projection optical system Wave surface information (wave (four) difference) 'here' can find the coefficients of the singularity polynomial, for example, find the coefficient z37 of the first term and the coefficient z37 of the 37th term.

In the aforementioned memory device 42, a database of the wavefront aberration change table of the projection optical system pL is memorized. Here, the wavefront aberration change table refers to a change table composed of a data group which arranges data according to a predetermined rule, which indicates a change in the unit adjustment amount of the adjustment parameter (the use and projection thereof) The optical system PL is essentially an equivalent model, and the simulation is performed to know the side simulation result, and the formation state on the wafer of the projected image is optimized, and corresponds to a plurality of fields in the field of view of the projection optical system PL. The imaging performance of the measuring point (specifically, the information of the wavefront, for example, the variation of the coefficient of the first to the 37th of the 杳neg polynomial). In the present embodiment, the driving amounts of the movable lenses 13i, 132, 133, u, and 4 1 3 5 in the direction (the driving direction) are used (Ζι, 0Χι, Θ 54 1253105, "2, Ή3, θχ4, θΥ4, Ζ5, “, 2: 5), day/day® w surface (wafer stage) 3 drive in the direction of W, w “, W0y”, and the offset of the illumination light EL wavelength Δ λ A total of 19 reference I's are used as the above-mentioned adjustment parameters. Here, 'the production of the database of the above-mentioned wavefront aberration change table is explained as follows. First I in the model A of the installation of a specific optical software, input The optical conditions of the exposure device i100 (for example, the design value of the projection optical core PL (numerical aperture NA, and each lens data, etc.), the coherence σ value m σ) or the numerical aperture of the illumination optical system # NA, and, Zhaoming EL Wavelength (exposure wavelength U, etc.) Next, in the analog computer, input data of any i-th measuring point in the field of view of the projection optical system PL. Next, 'the input movable lenses 13l to 135 are each in the direction of the direction (movable) Direction), the above-mentioned degree of freedom direction of the wafer W& face, illumination light wave The data of each unit amount of the offset. For example, if the input of only the unit lens of the movable lens 13l is input in the + direction offset in the z direction, the field of view of the projection optical system pL is simulated by the computer 46 The predetermined measurement point in the inside calculates the amount of change from the ideal wavefront of the first wavefront, for example, the coefficient variation of each of the items (for example, 帛) to 37 (37) of the occlusion polynomial is calculated, The data of the change amount is displayed on the screen of the monitor of the computer village, and the change amount is stored in the memory by the parameter pARAipi. Secondly, if it is tilted in the Y direction (rotation around the X axis) + Direction, input only drives the movable lens to use the computer 46, for the first

For the instruction of 131 units, the data of the second wave surface is calculated by the modulus measurement point. Example 55 1253105 2 varies the amount of the above-mentioned coefficients of the Chanek polynomial. The change: the data is shown above. The picture i of the display, and the amount of change is stored in the memory with the parameter PARA2P1.

Next, if the X-direction is tilted to the direction of the rotation of the T-axis (the + direction) around the axis, the command to drive the T-lens 13l is only used by the brain: 46, for the first! The measurement point is calculated, and the data of the third wavefront is calculated. For example, the change amount of the above-mentioned various coefficients of the binogell polynomial is displayed on the screen i of the above display, and the variation is determined by the parameter. PARA3P1 is stored in memory. After that, the second measurement point to the "input of each measurement point of the measurement point" are performed in the same manner as described above, and the displacement of the movable lens A in the ζ direction, the γ direction inclination, and the χ direction are performed each time. When the command input is tilted, the simulation computer 46 calculates the data of the i-th wave surface and the second wave surface π the third skin surface of each measurement point. For example, the data of each change amount is displayed on the display surface. On, and, in PARA1P2, PARA2P2, PARA3P2....... in memory. PARAlPn, PARA2Pn, PARA3Pn memory

Regarding, his 132, i33, i34, 135, also use the same steps as above to carry out the input of each measuring point, and in the respective direction of the direction, in the direction, drive unit quantity command input, In response to this, the analog power supply 46 is used to calculate the wave surface data for the first to nth measurement points when only the movable lenses 132, 133, and 45 units are driven in the direction of the degree. The variation of the polynomial, parameters (pARA4P 1 PARA5P1 , PARA6P1 > ....... PARA15P1), parameter 56 1253105 (PARA4P2, PARA5P2, PARA6P2........PARA15P2), parameters (PARA4Pn, PARA5Pn, PARA6Pn........ PARA15Pn) is stored in memory. Further, regarding the wafer W, the input of each measurement point is performed in the same manner as described above, and only a unit amount of command input is driven in the + direction in each direction, and the analog computer is used. 46. Calculate the wavefront data for the first to nth measurement points when only the unit quantity of the wafer W is driven in the Z, 0 X, and 0 y degrees of freedom, for example, calculate the variation of the stagnation polynomial , parameters (PARA16P1, PARA17P1, PARA18P1), parameters (PARA16P2, PARA17P2, PARA18P2), ... parameters (PARA16Pn, PARA17Pn, PARA18Pn are stored in memory. Further, regarding wavelength shift, also with the above In the same step, the input of each measuring point is performed, and the command input of shifting the wavelength by only a unit amount in the + direction is performed, and correspondingly, only the wavelength shift unit amount in the + direction is respectively performed by the analog computer 46. At the first to the nth measurement points, the wave surface data is calculated. For example, the variation of the Chanek polynomial is calculated, and the parameters (PARA19P1, PARA19P2 . . . PARA 1 9Ρη) are stored in the memory. Here, the above parameters The number of PARAiPj (i = 1 to 19, j 2 - 1 to η) is a matrix of 37 rows and 1 column (longitudinal quantity). That is, if η = 33, with respect to the adjustment parameter PARA1, Bay becomes the following formula (6). The parameter PARAiPj is a matrix. As for the following formula (6), for the sake of convenience, the matrix matrix is used. 12531〇5 PARA\P\ = [zx i Zj 2 ......1 - PARAIP2 = [Z2>1 Z2f2 ·_····2237] : ' Bu,·(6) PARAlPn = [z331 Z33 2 ......233 37 j Also, regarding the adjustment parameter PARA2, it becomes the following formula (?). PARA2PI = [Ζυ Zl2 ... 2137] ι ΡΑΜ2Ρ2 = [ζ2λ Z2 2 ...···Z2 1 : ,37j ...(7)

PARAlPn = [z33 l Z33 2 ... 233 3? J Similarly, regarding the other adjustment parameters pARA3 to PARA19, _ 戍 is the following equation (8). PARA3P1 = Kl -· Γ •Μ PARA3P2= :[U2,2 ... '^2,37 ] PARAiPn = [^33,1 ^33,2 * · ^33,3?] PARA19P1: [Zi,i Z12 ... Γ PARA19P2 = lZ2, l ^2, 2 *· of 2,37] PARA19Pn = =[^33,1 ^33,2 · **^33,37

Therefore, in this way, the column matrix (longitudinal quantity, which is composed of the variation of the coefficients of the Chanek polynomial recalled in the memory) pARAipi ~ PARA19Pn is concentrated in each adjustment parameter, and alternately arranged side by side. As a wavefront aberration change table of 19 adjustment parameters. As a result, a matrix (row and column) 所示 represented by the following equation (9) having the column matrix (longitudinal quantity) PARA1P1 to PARA19Pn as an element is created. Further, in the formula (9), m = 1 9 . 58 Ϊ253105 PARAWl PARA2PI PARA1P2 PARA2P2 PARAmPl PARAmPl •(9) PARAmPn PARAlPn PARAlPn

Therefore, the database (which is constituted by the wavefront aberration change table of the projection optical system pL thus formed) is stored inside the memory device. Next, in the exposure apparatus (10) of the present embodiment, the setting parameters of the above-mentioned 19 adjustment parameters for adjusting the projection optical system PL, the imaging state movable lens, etc., are set in the exposure apparatus (10). The general adjustment method of the projection optical system, including its principle and details. First, before the first step, the wavefront aberration of the projection optical system PL using the wavefront aberration amount is used. The measurement result ten finds the data corresponding to the wavefront (wavefront aberration) of the i-th measurement point (evaluation point) to the first measurement point (evaluation point) in the optical field PL field of view, that is, the item type For example, the ρ term system, the number Ζι 帛37, and the z37 are stored in the memory of the RAM of the main control device 5, etc. In the following description, the following equation (1) can be used. The matrix Q of the column corresponds to the wavefront corresponding to the 4th to 4th measuring points (wavefront aberration _....'

Q •(10) 59 1253105 Also, in the above formula (1〇), left click, ^ Array Q elements Ρι~Pn series matrix (longitudinal, which are respectively by the Chane ^ ~ 克夕项之弟1 The coefficient of the item ~37 (composed of Z1~Z37)). Secondly, by means of the main control, the M is operated, and as described below, the above-mentioned movable lens is operated, and the adjustment amount of each degree of freedom and the adjustment amount of the wafer w by the degree of direction are calculated. , Zhao..., Mingxian EL wavelength shift amount.欠^correspond to 帛1 $measuring point~帛n measuring point wavefront (wavefront aberration) bedding material Q is the relationship between the shell library (matrix 〇) and the above 19 adjustment amount p 'the following formula (11) Established. Q = 〇· P • (1) In the above formula (11), P is a column matrix (ie, a longitudinal amount) composed of m (ie, 丨 9) elements represented by the following formula (12). .

ADJV ADJ2 (12) ADJm Therefore, the operation of the following equation (1 3) is performed according to the above equation (12), that is, the respective elements Adj i to adJm of p are obtained by the least square method '旎, that is, The amount of adjustment of each of the movable lenses U1 to 135 by the degree of direction (target adjustment amount), the amount of adjustment of the wafer W by the degree of direction (target adjustment amount), and the amount of wavelength shift of the illumination light EL (target shift amount) ). P=(0T· 0)- . 〇T. Q (13) In the above equation (13), the 〇τ is the transposed matrix of the rank 〇, (〇τ · 〇) is 1253105 (〇· Ο) The inverse matrix. Therefore, the main control device 50 reads the data banks in the memory device 42 into the RAM in order, and calculates the adjustment amount gamma ~ ADjm. In the eight-person, the main control unit 50 supplies the values of the movable lenses 131 to 135 that are driven by the degree of the direction to the imaging performance correction controller 根据 based on the J1 ADJ15 stored in the memory unit 42. Therefore, the imaging month controller 48 controls the application of each of the driving elements of the movable lens 13 wide 135 in the direction of the degree, and at least the position and the mode of the movable lenses A to A are adjusted substantially simultaneously. At the same time, the main control device 5 is used to supply the command value for driving the wafer W to the wafer table driving portion (not shown) in the respective directions of ζ, θχ, ^ in the actual scanning exposure. To drive the wafer table WST so that the wafer W in the exposure field is always kept equivalent to the value adjusted by the adjustment amounts ADJ16 to ADm, and 'the main control device is simultaneously with the above actions. According to the adjustment amount ADJ19, a command is supplied to the light source 16 to shift the wavelength of the illumination 。 rainbow. Thereby, the optical characteristics of the projection optical system PL, such as change, image plane curvature, coma aberration, spherical aberration, and The astigmatic aberrations and the like are corrected. Further, for the coma aberration, the spherical aberration, and the astigmatic aberration, both the low-order and high-order aberrations can be corrected. - Next, the adjustment method for the projection optical system PL ( It is exposed by this embodiment The line pattern image in the orthogonal two-axis direction performed by the device (10) is used for the purpose of adjusting the line width difference). The flowchart of Fig. 4 is used, and other drawings are appropriately referred to. First, Step H) 2 t of Fig. 4, using the above steps, using 61 1253105 wavefront aberration I, and si # difference, the measurement result, :,,: amount: (4) optical system ^ wavefront image (here (4) 3), the technical shadow optical system, the n Z37 in the PL field of view, and then record the coefficient of Z1~37 item &37; the coefficient of the item 37: ° The main control device 5〇 RAM and other memory. In the following 104, the measurement reticle RT (^ reticle RT) described below is carried on the reticle stage RST, and the measurement wafer (square #t, '.WST, (conveniently referred to as "wafer W") is carried on the wafer. The carrier of the reticle Rt and the carrier of the wafer WT are transmitted under the guidance of the main control device 50. The main/lower fine is carried out by a 5*, a circular carrier carried by a reticle (not shown). The daily transmission 2 1 ' is directed to the reticle RT, and is illustrated according to Fig. 5. Fig. 5

From the side of the pattern, the standard score Κ ρ τ τ U is a plan of the RTi. For example, the fifth-line RT is formed into a rectangular figure, which is composed of a square glass substrate and is substantially surrounded by a light-shielding band sb in the central portion of the pattern surface. The same shape. A total of 33 patterns for measurement patterns MP1 to MP are formed in the pattern area ^. Each measurement pattern MPj (J = 1 to 33), for example, when the center of the reticle 3 PA) coincides with the optical axis AX of the projection optical system, the position is transmitted to make the corresponding measurement The position of each measurement point (evaluation point) in the effective field of view of the projection optical system PL of the aforementioned wavefront aberration. Each measurement pattern MM is as shown in FIG. 5, and includes a design of a line width (for example, '600 nm) in the γ-axis direction and a design line width extending in the z-axis direction (for example, 6). The second line of 〇〇nm) is slaughtered. If the projection magnification of the 62 1253105 projection optical system PL is set to 1/4, and the second line pattern and the 'second line pattern are transferred onto the wafer, there is no spherical aberration on the projection optical system pL. In an ideal state of various aberrations such as astigmatic aberration, a line pattern image having a line width of 150 nm can be obtained for each of the first line pattern and the second line pattern. Further, a reticle alignment mark (M work, M2) is formed on both outer sides of the pattern area p A on the 轴 axis of the pattern center PA center (consistent with the reticle center). In the state in which the reticle Rt is carried on the reticle stage RST, the pattern surface (the surface on the front side of the paper in Fig. 5) becomes the ruth side to the projection optical system. In Fig. 5, the reticle alignment is performed in the next step 丨〇6. The reticle alignment is exemplified, for example, in Japanese Patent Laid-Open No. Hei 7-176468, and the corresponding Japanese Patent No. 5,646,413, the entire disclosure of which is incorporated herein by reference. The reticle alignment marks (M1, M2) formed by the detection reticle Rt are offset from the position marks corresponding to the reference marks formed on the reference mark plate FM on the wafer table WST, and the adjustment target is adjusted according to the detection result. The position of the yam plane _ γ plane _ in the reticle stage (including 0 z rotation) is thereby performed to minimize the positional deviation between the two. By aligning the reticle, the center of the reticle RT is substantially coincident with the optical axis of the projection optical system P L . In the next step 108, under the predetermined illumination conditions, the measurement patterns MPj of the reticle Rt disposed in the illumination area IAR pass through the projection optical system PL, and the reticle stage RST and the wafer stage WST It is statically transferred onto the wafer WT, and the image of the measurement pattern Mp in the pattern area PA "63!2531〇5 (strong kidney image) is formed on the photoresist layer coated on the surface of the wafer Wt. According to the detection result of the focus position detection system (shen, 6 sen), the main control unit 50 is used to image the image surface of the image, so that the surface of the wafer I is aligned 'through the wafer stage drive unit (not shown) ), the wafer table is given a slight drive in the 2-axis direction, and the tilt angle of the wafer stage is also adjusted as needed. The WST is moved step by step in the multiple fields on the wafer WT. It is also possible to sequentially transfer the pattern area PA of the reticle Rt.

In the next step 110, the measurement on the reticle 1 is performed, and the wafer W is transferred according to the instruction from the main control device 50: downloaded from the wafer table WST, in the exposure device 1 The wiper is conveyed by a transport system (not shown) by using a photoresist coating developing device (not shown) connected in the line -). In the next step 112, the main control device 50 is used. Directing the instruction to the control system of the coating and developing device 40 ^ t , first, according to the instruction, by applying a developing device (not shown), in the wafer W, you,

The photoresist pattern of the 1st pattern W is formed on the Wt. The gamma is 1 U, and the developed wafer wt is carried on the wafer table WST in the same manner as described above. In the next step 116, the line width measurement of the photoresist of the measurement pattern MP on the wafer Wt is performed. The line width measurement, the yarn, moves the wafer from the WST in the χγ plane by the main control device 50', and uses the alignment system ALG to sequentially illuminate at least one measurement pattern Mpj on the wafer Wt. The obstruction image is subjected to a predetermined process (including calculation) based on the photographic signal obtained as a result of n-Hai photography. As a result, in each of the projection optical systems PL, 64 1253105 量 (measurement point), that is, a line width pattern image of the line width of each measurement pattern image (in this case, a photoresist image) In this case, the second line E L2 of the line width of the second line pattern, the second line pattern, and the photoresist pattern is produced. ..., and then stored in the second I:: "8 'the main control device 5 ° is based on the above-mentioned pattern ΜΡ 』 line width U and line width to, the measurement pattern MP. The real # Λ TT i τ owes the memory of each f to see ^ U - L2, and then stores it in (10), etc. = for a plurality of fields of the crystal, when the above-mentioned field is performed, the formation of I is for each of the plural, ^ 仃Line width measurement, line width difference calculation. In this case, the measurement pattern of each measurement obtained from each of the multiple fields = the production value, for example, the simple average value, is regarded as the line width difference of each measurement pattern MPJ. The effect is to reduce the measurement error, and to improve the line width difference (ie, the line width of the first line pattern (vertical line) and the line width of the second line pattern (longitudinal line pattern). The difference (hereinafter referred to as "the line width difference of the vertical and horizontal lines")). η is lower, 120, based on the line width difference between the vertical and horizontal lines of each evaluation point, and the coefficient Ζ12 of the 12th item of the singularity polynomial, the coefficient ζ9 of the ninth item is set. Here, regarding any of the evaluation points, the hoarding of the 12th term from the measurement result of the wavefront aberration is 7 曰 曰 系数 系数 Z l , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The order is the fourth-order enamel component to represent the higher-order astigmatic aberrations. As shown in the simulation results in Figure 6, when & is zero, that is, when 65 1253105 Ζ, ^ Ο ιι, 4th order 0 (the coefficient of the 9th item of the 9th component is irrelevant to the size of the surface of the pupil plane. The wavefront in the pupil plane becomes the same disorder in any direction. It can be seen that Z!2 2, that is, in Fig. 6 In the upper section (Fig. 6A to Fig. 6C), a contour line pattern composed of a plurality of concentric circles is drawn on any of the drawings. That is, if ZifO, here, the control of the line width difference of the objective line is used. (Adjustment) is difficult. Therefore, for any of the evaluation points, the Zu coefficient of the 12th item obtained by the measurement results of the wavefront aberration is assumed to be zero.

The actual projection optical system, in the field of view, any one of the bounds 1 1 jin 1 point, usually the wavefront aberration of the 12th item of the omnipotent polynomial. The coefficient is not zero, this assumption can be said to be in line with the facts By. Further, in the present embodiment, the following processing is carried out. The coefficient of the ninth item is set at the evaluation point according to the line width difference Δ L of the vertical and horizontal lines and the coefficient zu value (size) of the 12th item of the item, and the predetermined value is 9 The target value of the change amount of the coefficient Z9 Γ π '1st ί 2 ·········································· 14) to indicate the change of the wavefront aberration in the target of Q, the target value of the account 2, <2丨=;2 · "(14)

Forbearance, J 66 1253105 In the above formula (14), each element P/, P2'........Pn'(n = 33) is respectively of the following formula (15〇, (152).. ...(15J to represent the matrix of 37 rows and 1 column (column vector). Ρ: 0' ^1,8 0 ^1,9 = ri ^1,10 0 ^1,37 0 ·0 · ^2,8 0 ^2,9 = h Z2,10 0 Z2,37_ 0 ••(152) (15,)

.(15”)

It is also known from the above equations (15 0, (152), ... (15n) that each element P/, P2'.....Pn' can be regarded as its evaluation point. The coefficients other than the ninth item of the Zernike polynomial (measurement point) are all zero, and can be regarded as the matrix of the column of 37 rows and 1 column (column vector) whose coefficient of the ninth term is rj (j = 1 to 33). Therefore, if the adjustment amount 67 1253105 of each adjustment parameter at this time is expressed by the matrix P ', the above-mentioned matrix 〇Q, = 0 · Ρ is used, and the relationship of the following formula (16) is established. (16) Run|竿ADJY ADJ2 (17) ADJm solves equation (16) in the next step 122 to find the operation of matrix sub-form (18). The main control device 50 uses the least squares method to P' (by Each adjustment amount is formed)

(18) ρ, = (0τ · 0)·1 · 〇T · Q, in the next step 124, the main control unit 5 calculates the adjustment amount based on the calculated ρ' (ADJ1~ADJ15, ADJ19), and the foregoing

In the case of controlling the movable lenses 13 to 135 #, the respective portions are adjusted, and the projection light is adjusted to the system PL or the like, and the series of processes is terminated. Further, regarding the position adjustment mode ADJ16 to the amount of adjustment adj18 of the wafer, the position is first controlled in the RAM or the memory device 44 by using the position control of the wafer table WST at the time of the exposure. Thereby, the wavefront aberration of 33 evaluation points in the field of view of the projection optical system pi, specifically, the adjustment of the projection optical system P1 in which the coefficient of the ninth term of the Zernike polynomial is changed only is completed, and the adjustment is completed. The projection optical system PL, the circuit on the reticle R on which the vertical line (v, line) pattern and the horizontal line (H line) pattern are mixed is shown in Fig. 68 1253105 (10) printed on the wafer w 'by this' in order to make these vertical The line width difference between the line (v line) pattern and the ridge line (H line) pattern image (the line width difference of the vertical and horizontal lines) approaches the design value, for example, corrected to approach zero. : at:: For the adjustment of the above-mentioned projection optical system pL, the reason why the line of the line can be corrected can be explained in detail. The lower part of the ^L6 diagram (6D to (4)) indicates that when the higher order image is the 12th coefficient of the Rick polynomial, Z12=+20m; l, according to the low-order spherical aberration term

The wave surface change in the plane of the light of the light: the change of the coefficient of the second item of the second item, the change of the coefficient of the # Sun# (simulation result). Among them, the 6D::Table: UnU case, the "E picture system situation" the best picture shows the situation of Z...〇nU. Change = some = 'When the 12th item is not zero, if the item 9 is made (4), and the shape of the wavefront is different from the horizontal direction. The sign of the two 12th term is positive, for example, as shown in the first light: Γ: 为: positive, upper and lower phase is negative. When the payment of item 9 is positive, for example, if the phase is positive, when the symbol of the 9th item is not, the peripheral part of the aperture is 亍, when the tiger of the production is negative, for example, In Fig. 6A, the phase of the outer periphery is negative. Therefore, when the first is positive, if the phase change of the item 9 and the item of the item are the same as the item 9:: Around the aperture, the 12th change is positive, so the phase change is negative, and the phase culture of the 9th item is Ma Zheng, so the mutual subtraction is shown in the left and right direction of the pupil:: shape 'for example, as... ^, the leather surface is disorganized 'the wave direction error in the up and down direction 69 1253105 Here, the vertical line (v line) pattern on the reticle has a space in the lateral direction. The frequency component, so from the vertical line ( The v-line) pattern produces diffracted light in the left-right direction. The horizontal line (H-line) pattern has a spatial frequency component in the longitudinal direction, so that a diffracted light is generated in the vertical direction from the horizontal line (H-line) pattern. Therefore, as described above, When the sign of the ninth item and the twelfth item are equal (in the case of the sixth FW), the contrast of the longitudinal line pattern image of the diffracted light becomes lower in the direction of the phase change, and the line width becomes thinner. In the change J and the upper and lower directions, the contrast of the horizontal line pattern image in which the diffracted light is generated is hardly lowered, so the line width is substantially the same as the design value. As a result, the line width _ difference of the vertical and horizontal lines becomes a negative value. When the sign of the twelfth item is positive, if the sign of the ninth item is negative, the phase change of the twelfth item on the left and right sides of the pupil is positive, and when the phase change of the ninth item is negative, the mutual weakening is in the light. Above the 瞳, the phase change of the 12th item and the phase change of the ninth item are both negatively enhanced, and this case of the 'main' becomes the wavefront distribution in the pupil plane shown in Fig. 6D. This is above the phase change. Direction, the horizontal line of the diffracted light is generated right. Contrast stinky The line width is thinned. In contrast, in the leftward direction where the phase change is small, the contrast of the longitudinal line pattern image of the diffracted light is hardly lowered, so the line width is approximately the same as the design value. As a result, the line width of the vertical and horizontal lines is obtained. The difference is positive. As can be seen from the above, when the ninth and the twelfth items are not zero, the wave direction of the steering wheel in the light direction of the Luss + shang ~ right direction is based on the ninth item and the insertion/ The symbol of the member is different from the positive and negative. At this point, in the state where the value of the twelfth term is fixed, 镧敕 "θ -, the ninth item (low-order spherical aberration component) 70 1253105 , can adjust the line width difference of the vertical and horizontal lines. The above item 9 (the order of p is

The difference in the phase change between the order of the fourth order and the second item (P difference 成 成 成 〇 〇 成份 成份 成份 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低It is easy to understand that the order of the term is 2nd order 0Θ成~3) and the order of the 5th item (1) is 2nd order and the lower order image of the injury (cos2 0 component). Aberration term: The sign of the left I 2 term of the coefficient comparison is positive, for example, as shown in Fig. 7E, when the 4th: the bit is positive, the phase in the up and down direction is negative. In addition, the paying number is positive, for example, if the phase of the outer peripheral portion is positive... 4 as shown in Fig. 7C, when the sign of the light 瞳^ 7δ is *$4, the sign is negative, for example, ::: The phase of the outer peripheral edge of the pupil is negative. Therefore, when the symbol of the 5th wide term is equal to the 7F picture, the light is around. The phase change is large, and the phase change in the up and down direction is small. On the contrary, in the case of the production of 5: the πth figure which is not equal to the symbol of the fourth item, the light = direction: the phase change is small, and the phase change in the up and down direction is large. w However, when the fifth item is not zero, in the vertical line pattern and the horizontal line pattern, the preferred focus position varies depending on the coefficient value, so if the *th item is changed to ^, the vertical line (V line) pattern and the horizontal line The line width difference (line width difference) of the line (H line) pattern image is generated according to the defocus (ie, the change of the fourth item). That is, when the 'width is changed by defocusing, the focus position of the fourth item which is not shown in the CD_focus line diagram of Fig. 8 corresponds to the vertical line pattern and the horizontal line pattern of the item $. The difference between the best focus positions produces a line width difference between the vertical line pattern image (7) and the horizontal line pattern image (H). This is the astigmatic aberration of the 20 component that is generally seen. 71 1253105 The difference in the effect of the θ component change (defocus) on the vertical line width. It can be seen that when the lower order ==(four) term is not zero, the adjustment indicates the line width difference between the divergent and the horizontal image. Item, (4) Small vertical line pattern image... Figure 9 shows the use of KrF Ray source with a wavelength of 248.3 nm, illumination for the 0.75 2/3 ring band illumination condition = PL numerical aperture _ complement situation, transfer The above two = the line width measurement of the photoresist image obtained by the pattern on the piece of Hanting. I. 2-, one part: two parts represent the &, λ,, = two parts of Figure 9 In the first map and the first graph, the number Z4 of each of the contour lines of the four contour lines is Z4, and the vertical axis indicates the coefficient Z5 of the fifth item. From these descriptions, the figure 9 shows that it is for the soil I. In the circumference, and the combination of the z9 and Zi2 of the ninth coefficient & and the value of the twelfth coefficient Z12, the relationship between the line width difference of the vertical and horizontal lines when the chord is changed separately. The shade lines and the like attached to the fields in Fig. 9 indicate the line width difference of the vertical and horizontal lines shown in the lower column of Fig. 9. The field where the line width difference is positive indicates that the line width of the vertical line (V line) pattern is larger than the line width of the horizontal line (H line) pattern image, and the line width difference is negative. The field indicates the vertical line (V line). The line width of the pattern image is thinner than the line of the horizontal line (H line) pattern.

Fig. 12A shows a contour map of Zi2=4〇m; l Z "-4 mA" shown on the upper left side of Fig. 9, and Fig. 12C shows a CD-focus line map corresponding to the CC line of 12A 72 1253105. In addition, the 12th figure shows that Zi2=40mA, z9=〇m, etc. shown in the center of the upper part of the figure 10. The 12th figure shows the CD_focus line of the D-D line corresponding to the 帛12B figure. These figures show that the contour maps of Fig. 9 show how the change according to the change of the defocus term (filament z4) and the low-order astigmatic aberration 9 term (coefficient Z5) under some combination of Zi2^9 A diagram showing the line width difference between the v-line pattern image and the H and line pattern images (hereinafter, referred to as ΓVH difference). When the Zl2 value is zero (from the top in Figure 9) and the third paragraph alongside 5

The contour value of '29' varies depending on the graph, but as shown in the graphs below the 1() graph, no difference is found in the graph, no matter which map is in the focus position, if the value of B is zero, no VH difference is generated. . In contrast, when the z12 value is not zero, for example, # Zi2=+4〇m and then 'from the figures in the upper part of Fig. 10, if Z5 = 〇, it will result in a V-line pattern and The best focus difference of the H line pattern, the VH difference of the line width changes due to the value of Z4, but at this time, the value of each VH difference varies depending on the size of Z9. In order to more clearly understand the influence of the vh difference heart, a Zs equivalent to 20 mA of the coefficient & value of the higher order astigmatic aberration term is provided, and the low order astigmatic aberration term (coefficient I) is used. Correcting the case where the best focus difference between the V-line pattern and the H-line pattern of the 12th item of the high-order astigmatic aberration is caused by the focus influence of the line width difference. The VH difference of the line width is affected by the value. When the Zi2 value is positive, the line width of the v line pattern is thinner than the line width of the Η line pattern. Conversely, when the value of Zi2 is negative, the V line pattern is like The line width is thicker than the line width of the η line pattern, and it can be confirmed that the contents described in the sixth drawing are used. 73 1253105 The results of the experiments conducted by the inventors were based on better focus difference (line width 〇·72 # m line and gap pattern (L/S pattern) and line width under normal illumination conditions of illumination ° 〇·4 The difference between the better focus positions of the i4//mL/s pattern), the size of the spherical aberration term Z9 is changed from -〇·1 § #m to one 〇"claw' to confirm the line width VH The difference is reduced from 27 nm to 7 to 8 nm. From the above description, it can be proved that, as described above, each evaluation point in the field of view of the projection optical system is based on the line width difference (VH difference) a1 of the vertical and horizontal lines and the twelfth item coefficient z! The value (size) is calculated, and the target value of the ninth coefficient Z9 variation is calculated Γι........... rn(n=33), according to the calculated ninth coefficient & The target value of the amount of change is adjusted by the aforementioned projection optical system, whereby the line width difference of the vertical and horizontal lines can be adjusted. However, in the exposure apparatus 1 of the present embodiment, when manufacturing a semiconductor element, the reticle R for manufacturing the element is carried on the reticle stage RS, and then the reticle alignment and the so-called baseline are performed. Preparations such as measurement and wafer measurement such as EGA (Enhanced Global alignment). In addition, the preparatory work such as the reticle alignment and the baseline measurement described above, for example, is disclosed in Japanese Laid-Open Patent Publication No. Hei 7-176468 and the corresponding Japanese Patent No. 5,646,413, and the like, and secondly, regarding E (} A, and the disclosure of the above-mentioned each of the above-mentioned publications and the above-mentioned U.S. Patent No. 4,780,617, the disclosure of which is incorporated herein by reference. A 74 12531〇5 Then 'according to the wafer alignment result, the exposure of the step-and-scan method is the same as that of the general scanning exposure device, so the ten detailed explanations are omitted. In the exposure apparatus according to the embodiment, the exposure optical system pL adjusted by the adjustment method shown in the flowchart of FIG. 4 is used, and in the scanning exposure, the exposure field is used. The position and mode of the wafer W are controlled based on the calculated adjustment amounts ADJ16 to ADJl8. This embodiment is in the circuit pattern formed by the reticle R. The longitudinal line pattern is like the line width of the horizontal line pattern, and the left side is reduced. These images (latent images) are formed on the respective illumination fields on the wafer. From the above description, the sound A At , The adjustment section of the embodiment is composed of movable through: Ul~135, wafer table WST, light source 16, movable lens 13ι~i35, wafer table WST (ζ, ^9Υ η 0 x, 0 y) The position of the direction (or its change 1), and the wavelength offset from the light source 16 are the adjustment amount, and the hunting unit is controlled by the above-mentioned various adjustment parts, the driving elements for driving the movable lens, and the correction of the imaging performance. 4S _ ^ The center of the soil drives the wafer table wst's wafer table drive # (not shown) to form an image formation state adjustment device. The control device also controls the image formation state adjustment. However, the image formation The state adjusts the composition of the farm. The composition of the clothes is not limited to the above-mentioned conditions. For example, the adjustment section is Yamaguchi-human-U5. This is because even if the money =, it can only contain the movable lens. 4 k kinds of pseudo-shapes can also adjust the imaging performance of projection optics (像, 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 According to 75 1253105, the alignment system ALG's filming method and the horizontal line pattern of the light-resistance pattern are included in the vertical line diagram, ^ ^ ^ Θ ^ line width), to form the line width Measuring device. For the line to see the measuring device, 1〇〇^ ^ ^ For example, a dedicated measuring device (S Teng, etc.) disposed outside the exposure device can also be used. The optical system "adjusts the I measurement system using the wavefront aberration measuring device 80, according to the through-hole and the projector, but is not limited to this, and the space image formed by the example is used for the US-patent. 5th, 978th, 〇85th, etc. The amount of special structure that is not revealed by the first cover, through the individual settings, the ten holes and the optical system of the shirt, will print on the substrate and #, < *(5) ! For measurement, ^, and, can also not pass through the condenser lens and pinhole substrate? And the light-to-system" prints the reference pattern on the hood on the basis of the respective reference patterns of the plurality of resist images obtained by the results of the printing of the stomach and the stomach, and the operation of the case is first, and the positional deviation is set. By the established difference, the wavefront aberration is different. According to the above description of the plan, if the adjustment method of the projection optical system & according to this embodiment, it is necessary to charge, ^ ^ Ά ^ 杈 ~ first to the system PL ·, to control the two It is difficult to adjust the high-order astigmatic aberration (item 12): the line width of the aforementioned vertical and horizontal lines generated by 曰 is used to control the spherical aberration (item 9). Therefore, it is possible to control freely and surely, and it is difficult to control the vertical line pattern like the line width of the horizontal line pattern. = According to the exposure apparatus 100 of the present embodiment and the wavefront surface image ί measuring device 80 of the exposure method, the projection optical system 扛/reverse aberration is measured. In addition, the pattern used for the measurement of the 丨 、 用 用 用 RT RT RT RT RT RT RT 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 76 The wafer is formed by the squadron, and the photo-resist image is imaged by the main control device 50 using the pattern 2, and the photoresist pattern of the vertical line pattern and the horizontal line pattern according to the photographic signal is used. The line width. The ancient control device 5 所, when the wavefront aberration aberration item measured by the wavefront aberration measuring device 80 is developed, the high-order astigmatism of the Η Η item of the 夕 夕 项 item is developed. When it is not zero, it is based on the first item (coefficient 12, the line width of the above-mentioned measured vertical and (4) case width! Line width = line width of the line pattern image of the second line width (line width) a low-order spherical image term (second optical characteristic) of the ninth item of the omnipotent polynomial affected by the interaction with the twelfth item by the formation of the sorrow adjustment device The size is controlled, that is, the image forming state adjusting device is used to control the size of the low-order spherical aberration that is easily adjusted, thereby controlling the aforementioned line width difference caused by the presence of the difficult-adjusted high-order astigmatic aberration. And 'using the illumination light EL to illuminate the circuit pattern of the reticle r, and transferring the circuit pattern onto the wafer φ W through the fading projection optical system PL. Thereby, the vertical line pattern can be effectively reduced The line width difference between the transfer images and the horizontal line pattern is different from that of the above embodiment. Among them, the case of the 30th (high-order astigmatic aberration term) of the Bragg polynomial for the wavefront aberration of the second optical property system and the second optical characteristic is the Berneck polynomial item 9 (low-order spherical surface) The case of the aberration is described, but the present invention is not limited thereto. For example, in the case of the first optical characteristic, the above-mentioned item 12 (the order of p is 4 77 1253105) can be measured... The order of the order is the fourth order of the μ component _ into the injury). In this case, the ninth y term which is the same as the above embodiment is used for the second optical characteristic. Due to the interaction between item 9 and item 13, on the reticle, the vertical line (V line) and the horizontal line (H line) are used for 45. The line width difference between the first slash and the slash pattern of the door is affected. Therefore, in the embodiment, when the 13 items of the stagnation polynomial are not ,, according to the value of the 13th item (the coefficient Z13), the 盥% θ, the " value and the measured slanting line image : The difference between the second line width of the line width of the second line width of the first line width of the line width (line width difference) is controlled by using the image forming state adjusting device described above to control the low of the Charney 2 polynomial The magnitude of the order spherical aberration term, whereby the aforementioned line width difference can be controlled.

In addition, the first optical characteristic can also be regarded as the investigation of the developed wavefront aberration. The wide order other than the above-mentioned 12th and 13th items of the gram polynomial is _W 2, the rotationally symmetric component 'the second optical characteristic It is the same as the second-order rotationally symmetric component of the second-order rotation-symmetric component. The size of the first optical characteristic of the sample 纟® is not zero. According to the difference between the size of the optical characteristic and the line pattern of the two-axis direction orthogonal to the measurement, the line width of the image is recognized. The projection optical system PL is presumed to have an effect equivalent to that of the above embodiment. Further, in addition to the linear difference of the above-mentioned vertical and horizontal lines (the combination of the optical characteristics of VH^ optical characteristics ,2, in addition to the combination of the ninth and twelfth items of the Charneck polynomial, there are also Combination of item 6 (coefficient Z6) and item 18 (coefficient Z1S), item 13 (coefficient Zi3) and 78 1253105 18 (coefficient Z18), item 12 (coefficient u and item 17 (coefficient, etc.) The inventor, etc., is able to effectively determine whether the combination of the Zernike polynomial term (Chagnek term) for the wavefront aberration is the cause of the VH difference, so a combination simulation for specifically finding the cause of the VH difference is performed. Figure 13 is a graph showing the illumination of the ArF excimer laser (wavelength 193 nm), the numerical aperture of the projection optical system pL (να) = 〇·68, the monthly J-0.85, 2/3 ring illumination conditions. Next, using the on-wafer conversion value, the line width = 〇nm (including the hood deviation · +4, such as the isolated line moment) is used as the Lu 7 pattern, using a halftone shift with a transmittance of 6%. Phase hood (twisted wire), on the wafer, the line width of the isolated line is processed into the intersection of the aberrations of (5) In the 13th figure, zi(i=4~2〇) represents the i-th term of the Chanek term. In the 13th figure, the upper right side of the sloping boundary is the aberration (Zanike) The father of j) is the size of the horizontal line, and the lower left side is the size of each of the aberrations (Chagnek) and the vertical line. From the table of Fig. 13, the 9th item (Z9) and The cross term of the combination of item 12 (Z12) is 759 on the horizontal line and _ ~ 759 on the vertical line, and the sign is exactly the opposite. Eightth of the sixth item (Z6) and the is item (Z18), the πth item (Z13) With the combination of the Uth (Z18), the 12th (212), and the 17th (8), etc., the sign of the vertical and horizontal lines is also opposite, which is the cause of the VH difference. (2) The combination of the optical characteristics is considered to be a combination of various Charnike terms, but is not limited thereto, and the first optical characteristic may be regarded as astigmatic aberration and the second optical characteristic may be regarded as spherical aberration. 79 1253105. In this way, if the astigmatic aberration is left, and the interaction of the spherical aberration causes the line width difference between the vertical line pattern and the horizontal line pattern to be affected, then the optical of the projection optical system When there is astigmatic aberration in the measurement result of the characteristic, the line width difference between the line pattern of the positive two-axis direction of the measured positive framing is based on the magnitude of the astigmatic aberration, and in order to control the spherical aberration, The left-handed projection optical system PL can control the line width difference. The right side can be understood in consideration of the k cases, but the optical characteristic measuring device of the projection optical system PL is not limited to the wavefront aberration measuring device. However, it is a device for measuring the aberration of the so-called Seidel such as the projection optical system PL < spherical aberration astigmatic aberration. For example, in this device, there is a so-called space image measuring device, etc. And forming a slit pattern or a rectangular opening pattern on the wafer, and scanning the opening pattern with the photoelectric element to detect the through-space image of the predetermined measurement pattern formed by the projection optical system π The light of the opening pattern. Further, in the above-described embodiment, the wavefront aberration of the projection optical system P]L is directly measured using the wavefront aberration measuring device 1G, but is not limited to the fourth order (coefficient Zn) high-order astigmatism image. For the difference, for example, it is also possible to obtain a better focus position of a plurality of L/s patterns (or different directions of the line: line pattern) in which the periodic directions are different, and the astigmatic aberration obtained by the result is obtained. The indeterminate coefficient of the calculation formula of the linear combination of the hypothetical low-order astigmatic aberration term (coefficient Z5) and the higher-order astigmatic aberration term (coefficient Zi2) is calculated by taking the Xiaoping method or the like to obtain the twelfth term. (Approximate value of the coefficient Zij. The preferred focus position of the L/s case of the different plural types in the above-mentioned periodic direction is obtained by measuring the position of the optical axis direction of the wafer while measuring the photoresist image with hidden #1253105 It is formed in each illumination field on the crystal 0 obtained by printing the above pattern on the wafer, and the spatial image measuring device may be used, and the optical axis direction of the spatial image measuring device may be changed. Positioning, performing spatial image measurement of the above-mentioned pattern, according to the image of the space The measurement result is obtained. ^# Further, when the line width measuring device is configured by the same configuration as that of the above embodiment, the longitudinal line pattern formed on the wafer can be measured and not limited to the photoresist image. The line width of the latent image or the etched image of the horizontal line pattern. Alternatively, the line width measuring device may be configured by the above-described aerial image measuring device. In this case, for example, a vertical line pattern and a horizontal line are formed on the image surface. The spatial image of the line pattern is measured by the space image measurement I. The line width of the space image is measured. (4) Simultaneously measure the line width. ^

～, ,,,V,... muscle π, which is explained when the line width difference between the vertical line pattern and the horizontal line pattern of the same line width is substantially the control of the hot line width difference, but the projection of the present invention The optical system = adjustment method, etc. are not limited to this. If the patterns in the orthogonal two-axis direction are different from each other, regardless of the line width (even if the line width is different), the control of the line width difference between the images can be performed. . In terms of the control of the line width difference, it is possible to protect the line width difference of the pattern image which is correctly approached to the design of the line width difference. Further, in the above-described embodiment, the projection optical system is adjusted by the main body (the projection optical system is mounted on the exposure device), but for example, in the process of the exposure device (particularly, the projection optical system), The projection optical system can be adjusted with a single unit before being placed in the exposure/device. However, the main cause of the line width difference between the line patterns of the orthogonal two-axis directions is not limited to the aberration caused by the projection optical system, i may wish to show the line 81 1253105 on the chip. Shi Xi T >, in order to reduce this main cause, the line of the two-axis direction of the right parent is too road-yang * machine to take the tea line width difference, you can also use this ^ month shirt Adjustment of the optical system ^, 士 ^ ^ Wan, exposure method, or exposure device. The genus of the genus and the above-mentioned implementation of the shape, 弁 and win Mt y r l heart 冋, according to the measured first neutron characteristics, for example, Zanikedo cage!仏(5) The value of the 12 items, the line width of the known first line pattern, and the line width difference of the second line pattern of the orthogonal nmk and the second line pattern, because of the first optical pull槌^, interaction, so that by the projection optics m, V is formed on the image surface, the S 1 line pattern image line width and the aforementioned second line

The second optical characteristic that is affected by the difference in line width (line width difference) of the pattern image, for example, is to adjust the projection optical system in order to control the size of the ninth item of the Jg 彳笙0 π. Therefore, the difference between the line width of the i-th line pattern image formed on the image plane by the projection optical system and the line width of the second line pattern image (line width difference) is caused by the drawing error of the pattern on the reticle or the like. When generated, the line width difference between the orthogonal line patterns can be freely controlled. Further, as is apparent from the above description, information on the wavefront aberration of the projection optical system can be obtained, and information on the pattern projection image can be further obtained. When the projection optical system is further adjusted based on the information, the use of the scanning optical system is used. The polynomial 'in a plurality of Chaneks who expand the wavefront aberration series' can also change the aforementioned image characteristics (the interaction affects the cross-term of any combination of the aforementioned Zernike terms of the projected image characteristics) Considering the Chanig's sensitivity' to adjust the aforementioned projection optical system, so that the change of the aforementioned projection image characteristics (the conventionally unconsidered interaction affects the combination of any combination of the imaging features of the image projection image characteristics) Item), considering the Chanig's sensitivity, to adjust the projection optical system, so it is customary to adjust the aberration components, such as 82!2531〇5, can also adjust the high-order aberration components, etc., can form the pattern of b ° A better-looking projection optical system. In this case, when the pattern contains a line pattern, in terms of the characteristics of the above-mentioned projected image, also, the characteristic variation of the line width including at least the line pattern is considered, considering the Nike砀 4 degrees. Moreover, in this case, the adjusted projection optical system can also be used to transfer the circuit pattern onto an object such as a wafer. This situation also enables high-precision pattern transfer. However, not only the line width of the vertical and horizontal lines, but also the line width of the line image of the line is affected by the defocus amount. Here, I Ming et al. conducted experiments in order to obtain the CD-focus curve described above. In terms of exposure conditions, the origin of a fixed water system is an ArF excimer laser (wavelength is 193 nm), the projection optical system p is shown, the numerical aperture (NA) = 178, illumination σ = 0.85, 2 /3 ring with lighting strip, "The cow object pattern is formed in a 6% halftone hood (reticle), with wafer conversion value, line width is just (10) isolated line (2 " m pitch). Further, under the condition of no aberration and no defocus, the exposure amount is obtained, and the line width deviation at the position of the defocus of +〇.~m is obtained. First, the gram item, for example, the 5 〇 111 and the aberration into the computer for optical simulation, if you yo! The κ ^ brother to the third item 7 to find the Chanek sensitivity, as shown in Figure 14. — In the picture of the younger brother 14, the Z i (i = 1 to 37) on the horizontal axis indicates each Zagnek term. In the conventional Zernike Sensitivity method (hereinafter referred to as "ZS method"), t Zermke Sens^tyUXT , ^ # )Si (1 = 1 to 37) can be expressed by the following formula (19), and Each of the n-th measuring points (hereinafter, also referred to as the measuring point n) 83 1253105 checks the size of the item cn, i (= the linear combination of the coefficients zd to indicate the line width deviation ΔCD. Again, below, Cn i is abbreviated as the component of the inspection component of each measurement point (Zagnek component). 37 ΔΟ) = 55Α, / ...(19) /=1 However, the calculation using the ZS method of the above formula (19) The result, and the method of directly calculating the spatial image by providing appropriate wavefront aberrations, can be seen in the curve shown in Fig. 15. That is, the calculation error using the zs method of the above formula (19) is too large. Therefore, the inventors have considered a method of estimating the line width by moving the CD_focus curve in a two-dimensional plane in which the focus and the line width are used as coordinate axes. As described above, since the linear width prediction error of the ΔCD method is directly expressed by the linear combination of the components of the Zernike term, the parallelization of the CD_focus curve is added between the calculation of the Chanek sensitivity and the calculation of the Δ(3). Move: one;

: According to the (3)·focus curve after the execution of this step (parallel movement), the method of different Δ CD is adopted. The movement of π total green is the degree of movement 1 (α η) and line width (movement of direction (stone). Basin + ^η) gossip of each measurement point η. For example, it is also possible to move in parallel (which is a CD-focus curve), and make y=f (x- + focal curve ' to calculate Δ(3) for a newly created function. " (predictive method) Hereinafter, the present invention is In the embodiment, the CD_focus curvature difference 84 1253105 is an embodiment of the method, and the flow chart (FIG. 24, FIG. 24) showing the processing flow will be described with reference to other drawings. In the 'measurement point n (n=l~33) of the aforementioned wavefront aberration of the exposure apparatus 100, the pattern is predicted by using a linear combination of the Zernike sensitivity method including the complex term of the Zernike term component c. A CD-focus curve that projects one of the characteristics of the η image|±. For each of the Zernike component Cn i, it can also be pre-determined by imaging simulation on the simulation computer 46, as described above. The value obtained by the measurement of the wavefront aberration measuring device 8 can be used. In step 202, the wavelength of the optical condition indicating the actual exposure EL, that is, the exposure wavelength (and the type of the light source 16 for exposure, etc.) and the maximum NA of the projection optical system PL are transmitted through the input device of the analog computer 46. (Numerical aperture), NA (in the present embodiment, a numerical aperture set by an aperture stop 15 when exposed, a coherence coefficient σ value (illumination or) or illumination NA (a numerical aperture of an illumination optical system), and The illumination conditions of the reticle (the light amount distribution of the illumination light EL on the pupil surface of the illumination optical system, that is, the shape and size of the secondary light source), etc., are sighed in the simulation computer 46. At this time, the imaging simulator has been started on the analog computer. On this screen, the imaging simulator is displayed.

surface. The operator or the like sets optical conditions and the like in accordance with the setting screen. Further, when the exposure condition is set, the information of the pattern on the reticle of each measurement point η (η = 1 to 33) is also set. For the pattern, there are isolated line patterns, line and gap (L/S) patterns, line 85 1253105?, positive, positive pattern, etc. (including whether it is a phase shift pattern and ', type, etc.), line pattern Line size, length, spacing and other pattern size information. The choice of pattern is determined based on the evaluation item that can be evaluated. For example, if the width difference of the vertical and horizontal lines is used as the evaluation item, it is assumed that the reticle formed by the mutually orthogonal line patterns of the reticle Rt shown in Fig. 5 must be used. Set the pattern information about the reticle. Here, in order to simplify the description, the pattern information on the reticle is set at each measurement point using the same size and the reticle formed by the pattern. In the next step 204, the CD_focus curve is produced without aberration in the projection optical system by imaging simulation. Specifically, the operator or the like instructs the simulation computer 46 to instruct the creation of the cd-focus curve when the projection optical system 2 PL has no aberration through the input device. In response to the instruction, the analog computer 40 is in the state in which the exposure bar set in the above step 2〇2 is assumed to be in the state in which the optical system of the shirt is free of aberrations, that is, in the equation (3). After the Nikk component components Zi (i=l~37, ie, Cn, i) are all set to 0, the line width of the line pattern is changed by the imaging simulator, and the CD is made into a CD. - Focusing curve. In the next step 206, the analog computer 46 adjusts the resulting CD-focus curve by the 10th function of the following equation (2〇). y=Cax10 + Cbx8 + Ccx6+Cdx4+Cex2 + Cf (20) where X is the defocus amount, and y is the target image corresponding to the defocus amount. In step 202 above, the line pattern of the pattern information is set to the line width, c

Cf is the coefficient of each order term of the 10th order function. The equation (20) can be 4 a large, and the function is a function consisting only of even-order terms of 2nd order to 1st order.楚乐17A图 86 1253105 is the ι〇 letter obtained from the result of the adjustment

The figure shows that the 10th function and the CD_focus adjustment error of the adjustment error by the imaging 彳' brother's 17B line (4) are shown in the figure of +0 02 7B, the system of the 10th order is at -0.02 Below nm, the adjustment accuracy is very high. The two of them, in step 208, make a chapter to determine the degree of defocusing of each (four) gram item by using the analog computer 46. Here, for example, if only the input of the difference is specified. Here, in the eight knowledge to carry out the various phases. In the knives, the change of the better focus position is obtained. Fig. 18 shows the sensation of the Chanek sensitivity. In Fig. 18, the axis j.1 (1 = 1 to 37) is a line indicating each item. As shown in Fig. 18, the sensitivity to the defocus amount is the rotation component of the Zanikes A, z9, z16, z25, Z36, & or the 2nd rotation of the Z5, k, WZ28, Z32, etc. That is, only an even number of ingredients. Others (odd θ components) are zero sensitivity, so the CD-focus curve, the odd-numbered θ of the focus direction is injurious ~ the ringing of the aberrations is not affected. Figure 19 shows three kinds of items 9 (Z.9), 12 (Z.12), and 16 (Z.16) with a range of 1〇mA from -5〇Π1λ to 5〇ηλλ, respectively. Each check> the change of the amount of movement (α: η) in the focus direction when the 圼 item moves at 1 o'clock. In Fig. 19, the slope of the straight line obtained by the least square method is also expressed in accordance with each movement amount of each defect. That is, the slope of each straight line becomes the value of each sensitivity of the check item. In addition, in the 19th figure, the ninth (Ζ·9), the 12th (Ζ·12), and the 16th (Ζ·16) 3 87 1253105 types are representatively shown, but other If the amount of aberration is within this range, it can be confirmed that it is almost completely linear. It can also be seen from Fig. 19 that, due to the correlation coefficient R24 1, the calculation of the s-sensitivity is usually performed. In order to save time, only the i-value aberration can be input to obtain the slope of the straight line. Here, the re-confirmation and derivation are performed. For the more correct value, from 5 〇m to 5 〇m λ, calculate the amount of movement of the η point focus direction (~) with a 10 mA pitch, and calculate the slope of the line using the least square method (ie, the Zernike sensitivity) value). Next, in step 210, the simulation computer 46 uses the Chanek sensitivity sai of each Zernike term and the Zernike term of each measurement point n (n=1 to 33) _ component Cn/Fl~33 ), using the following formula (2 1 ) for the comprehensive focus difference (tfd) and the spherical aberration of the astigmatic aberration spherical aberration, the CD_ of the measurement point η (four) ~ 33) is obtained. The offset of the focus direction of the focus curve is a π ° 37 αη = (21) /=1 However, in each Zagnek term, from _5〇ιηλ to 5〇m, the U-point aberration is input with (7)m and spacing. From the distribution of the long-term (better change of the line width of the preferred focus position) and the aberration relationship, the amount of aberration is positive or negative, the shadow is the same, if the aberration increases, then observe the proportional relationship Deteriorating by ... 'n can assume a linear combination of the squares of the components of each of the elements. Here, in the next step 212, the operator uses the simulation computer 乜 'under the set exposure conditions' to calculate the sacred items by the spatial image calculation: the square line of the line pattern Sense of 纟%. In the calculation of the line width variation of t 11 · point obtained by the spatial image calculation, assuming that the 2 88 1253105 order function is approximated by the least square method, as shown in Fig. 2, A function carried in y=sx2 can be observed. In addition, in the second diagram, 'there are only three types of the sixth item (Z_6), the seventh item (Ζ·7), and the ninth item (ζ·9), but other types of Zanike Item, confirmation can also be represented by a quadratic function. Further, Fig. 21 shows the sensitivities of the respective Zanike terms = 1 to 37). In Fig. 21, z.i (i = 1 to 37) on the horizontal axis indicates each item. As shown in Fig. 21, the line width varies, and the odd-numbered 0 component and the even-numbered Θ component have sensitivity.

Next, in step 214, the simulation computer 46 reads the Zernike term component cni of each measurement point from the memory, and uses the following formula (22) to find the CD-focus curve of the line pattern line width direction. Deviation amount η. 37 η (22) /=1 Next, in step 216, the simulation computer 46 uses the above-mentioned steps, the αη of the jinjin and the cold enthalpy (23) obtained by the above step 214, and the amount is obtained. The cd_focus curve of the measuring point η (four) ~ 33). The 〇 focus curve is obtained by considering the CD-focus curve of each measurement point η when considering the aberration of the projection optical system PL of the measurement point n. However, the CD_focus curve obtained here is still not considered for deformation. y/CJx — α )10 ·4~ r “ — π, 8 n b α π) + cc(x- α ny+ Cd(x- α ny

When Ce(X- aj2+C~n ... (23) , ^ n , the following formula (24) can be used instead of the above formula (22). 89 (24) 1253105 The above formula (24) is for considering each other. The product of the different Zanike terms, that is, the aforementioned cross term, and the expansion of (22). That is, the line width of the pattern image is not only affected by the square of the components of each Zernike term shown by equation (22). And also affected by the cross terms. As shown in Figure 22A and Figure 22 of the 22β map, the linewidth distribution is distributed over the ellipse of the tilt by the number of aberrations (the system is 22A) The relationship between Z.6 and Z.13, and the relationship between Z9 and z12 in Fig. 22B. In this case, the intersection of these aberrations is sensitive to the change of line width. Fig. 23 shows the intersection The sensitivity of the line width of the line pattern (serial). Also, in the equation (24), at the point S~ of the Η, add the same value of the % of the disc (22), in the equation (24) If only two items are taken out, for example, the form of the following formula (25) is obtained. L=s, lCn, i2+S/5i, "CniCj+s^," Cn?...(10) The tilted ellipse shown in the graph of 22B is actually calculated. In the case of a considerable number of items, it is possible to confirm the existence of the cross-item. The interpretation of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the CD-focus curve can be used on the CD- The change of the focus curve is represented by the change of the line width. The movement of A ', ', and β is the second highest. In step 24 of step 24, the imaging simulator is used to make the door empty - _ intended to use the computer 46 system, Measuring point seven, mountain is not, there is a state of aberration

The projection optical system pL is obtained from the measurement points in each of the points of the actual aberrations > 7 force wind D-1 focal curve. The off-state and the off-state can also be read by the master control 42 by reading the wavefront aberrations from the memory device 71. Next, in step 304, the computer stamp 46 uses the fifth function of the above-mentioned step 90 1253105 3 02 (26) to make the CD-focus curve, the proud focus, by the imaging simulation. The difference function y and approximation of the difference between the field ^ and the CD-focus curve calculated by the above formula (23). y\= r 5η(χ- α ny+ δ 4η(χ_ α η)4+ r 3η(χ — α η)3+ 5 2η(χ — α )2 + r 1η(χ- α η) ... ( 26) where 'r 5η, 4η, r 3η, 5 2η, r 1η are the coefficients of the order terms of the fifth-order function y, n. The coefficients γ 5n, 5 4n, r 3n, 5 2n, r ln are also It can be expressed by a linear combination of CM items including the ng term component. Specifically, the coefficients r5n, r3n, and rln of the odd-order term (hereinafter referred to as an odd-numbered term) can be used for each component Cn. The linear combination of the i terms indicates that the coefficients d 4η, δ 2n of the even order term (hereinafter referred to as the even term) can be expressed by the linear combination of the squares C n, i2 of the components of each Zernike term. In a step 306, the simulation computer 46 focuses on the odd number of y'n shown in the equation (26), and calculates the coefficient of the Zanikek pair for 5 times, 3 times, and 1 time by the spatial image calculation. 7 5n, r 3〆7, the Zernike term _ sensitivity S r 5i, S 7 3i, sr In. Fig. 25 to Fig. 27 show the sensitivity of each Zernike term Sr 5i, Sr 3l, An example of sr ^. In the next step 308, the simulation computer 46 is focused on the function. v, 】the even term of η' is obtained by spatial image calculation to find the square of each Zagnek component. The sensitivity of each of the Cn/fourth-order coefficients 5 4η, the second-order coefficient δ 2η δ &, S δ. Fig. 28 and Fig. 29 show the sensitivity S (5 4l, S δ 21) of the square of the components of each of the components of the sacral component, respectively. 91 1253105 In v 3〇1 The simulation computer 46 uses the following equation (27) (28)' to find the measurement point n (n=l~li, 33) of the current aberration state of the projection optical system PL 5 times, 3 The coefficient of the next and first coefficients 75 „, γ3η , r U 4th order, 2nd order coefficient is η, 52η. y5w = |Sy5.C,.3 73λ = |5y3.c^ , ϊΚ = Σ^ι,Α, / ---(27) 37 1=1 i=1 ^n-2Sd44Cn/ ό2/ ί=|5^Α,2 (28) i=l By the above formula, all expressions (23) can be calculated. The function yn of # and the function y, n of the formula (6) are the function y"n(=yn+y,n), the measurement point ( ), the focus curve (also considering the deformer) are all It is predicted that Fig. 30 shows that the representative measurement points k, k+l (k=l~32) are obtained in each measurement point n (n-1~33) under the set exposure conditions. ) CD-focusing curve y,, k, y,, ... mode diagram. As shown in the figure, the prediction method of the present embodiment performs the above-described step 202 to step 3〇1 'by this', using the 1〇 function y' to make the CD-focus of the assumed projection optical system PL zero. The approximation of the curve, in the linear combination of the components of the singularity of the measurement point k, is found to be: the direction of the defocusing of the under-function y and the direction of the line width (vertical axis), respectively, only offset, Into a +, so that the 5th function, k parts of the deformation 'by this to predict the measurement point...:. As mentioned above, the wavefront on the inside of the projection optical system hole and yk varies depending on the measurement point, so the Charneck component C · also 亍 ° 钊 °, 1 also varies depending on the measurement point. Therefore, the above y"k, y"k+1 are different curves. 92 1253105 The graph is based on the measurement of the precise imaging simulation, and the CD-focus curve of 33. For example, the graph is used to predict the same exposure condition and the measurement point of the same pattern by the above prediction method. CD-focus curve - examples. As shown in the figure and the figure, the error is determined by the imaging simulation < CD_focus curve and the CD_focus curve predicted by the above prediction method is very accurate at each measurement point, and the CD can be predicted with high precision. - Focus curve. That is, if the above prediction method is executed

Then, the C D -focus curve can be predicted with high precision at the time of transfer of a predetermined pattern under a predetermined exposure condition. Fig. 32 is a diagram showing the relationship between the calculation result of the ZS method described above and the method of directly calculating the spatial aberration by providing an appropriate wavefront aberration, irrespective of the line width deviation Δ(3). It can be seen from the comparison of the Fig. 32 and the foregoing figure that the "using the new ZS method right" can particularly reduce the error. It can also be seen from the 32nd ® that the line width can be correctly calculated by the extended ZS method even if the spatial image is not calculated by the imaging simulation.

In addition, in the description of the above-described steps 202 to 301, the description will be made on the premise that the operator or the like is transmitted, but only the operator or the like is designated (step 2〇2), and the processing after step 204 is performed on the simulation computer 46. (Or other computers connected to the analog computer) Of course, all can be carried out. It is also possible to provide an instruction from a host computer or the like in place of the operation of the aforementioned operator or the like. This modification can be easily realized by changing the software program '. In a computer such as the analog computer 46, a processing program other than the above-mentioned exposure conditions, for example, can be performed on a CD (compact disc), a DVD (digital versatile disc), an MO (magneto-optical disc), or 93 1253105 FD. (flexible dlsc) and other information recording media recorded in the state of sale. Of course, the electronic communication line b such as the Internet is used for the transfer of content. Use the above-predicted measurement points in digital (evaluation method)! ~ The C line of the measuring point n can be used to evaluate the pattern of the exposure device 1", ", and the above, in the position of the projection optical corresponding measurement point, ~n, assuming that the two sides are in shape, if in the frame Knife...Configure the isolated line pattern right at each I test point, predict the CD_focus curve, then in each denier, f| = according to the offset of the CD-focus curve, can evaluate the exposure field IA = isolated line pattern The characteristics of the image (for example, in-plane uniformity). The measurement shown in Fig. 5 assumes that the reticle RT is used (which is arranged in a position corresponding to the vertical line of the vertical line 11). , needle 3: wide line pattern, horizontal line pattern, respectively perform the above step 2. 2 to step the vertical line curve, then make the (3) · focus curve shown in the above figure 8, according to (3) focus curve difference, also The width of the vertical and horizontal lines of each point of the Sf price is measured. That is, the sum of the CD (line width) of the vertical and horizontal lines is determined. The combination of the two symbols in the vertical and horizontal lines can be found to make the VH difference two; = (check the buried items). The V line and the Η line cC Λ are the same value except for the 2 items, so in the calculation of the difference - △), regarding the ^, in the vertical line and (4), when, -, the Rick term sensitivity S/S',, W When the signs are different, the line width difference 94 1253105 is affected. Also, it is assumed that the L/S pattern is respectively arranged in the corresponding measurement points 1 to η, and the L/S pattern is applied to both ends. When the line pattern image is used to predict each CD-focus curve, the line width difference between the images at both ends of each measurement point can be evaluated based on the difference between the CD-focus curves, whereby, for example, the shape of the projection optical system PL can be evaluated. In addition, if the above equation (21), equation (22) (or equation (24)), equation (27), and equation (28) are expressed in a matrix form, the following equation (29) is used. ) shown

A33 A

H33 A Wa 0 0 0 0 0 0 y533 0 Wj3 0 0 0 0 0 y\ 0 0 Wy 0 0 0 0 = 0 0 0 Wy 0 0 0 y^33 0 0 0 0 Wy 0 0 y\ 0 0 0 0 0 Wd 0 0 0 0 0 0 0 Wd 7^33 H ^3362, 0233 ^37,37 ^5,1 sr5,3i 3,1 ^3,37 SYl,l ^^4,37 岣4 5*ό237 (29)

95 1253105 under. Where W α, W yS, W 7 , W (5 lines represent

Wa ^ψγ αι C!,l ...Q, C33,] 37 ,37

Cl,2 ... ,37 cm2 ς,2ς ,2h,l Ψβ Feng cli "1,37 C33; C33,22 c 2 33,37

Cl,l2 Cl,22 ...q ,37 c33/ "33,2^33! .·· C 2 33,37 W6 a 2 2 33,1 ^33,2

The C 2 33,37 matrix is based on the W/5 selection equation (21) or the equation (24). The above equation (29) can be organized as follows. f^Wa · ZS (30) The matrix of the coefficients of the two-system CD_focus curve, wa is the matrix of the wavefront aberration, and the ZS is the matrix of the sensitivity of the sensation. (Adjustment method) Next, based on the CDD-focus curve predicted by the above-mentioned CD-flat A _ > 4 heart LD 彔 focal curve prediction method, 彳亍 彳亍 彳胄 ^

At the end of the evaluation method of the pattern transfer state of the 曝 仃 曝 曝 装置 装置 装置 装置 装置 , , , , , , , , , , 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Also test ^ Here, the goal is to improve the in-plane uniformity (in the case of the isolated line pattern image that is sighed by the sigh in step 102). As described above, even if the patterns of U η (η = 1 to 33) in each amount are uniformly 96 1253105, if the CD-focus curve between the summer measurement points deviates, the pattern imaged at the measurement point is formed. The image is not uniform. Therefore, in the adjustment method of the present embodiment, as described above, the CD_focus curve of each of the predicted measurement points is adjusted to be as uniform as possible, and the pattern transfer state of the exposure apparatus 1 is adjusted. Hereinafter, the adjustment method will be described. First, the calculation formula is added according to the adjustment method. In order to homogenize the CD-focus curve of each measurement point n (n=1 to 33), it is preferable to adjust the above-mentioned nine parameters so that the above-mentioned α ^, cold, r 5n, 5 4n, r 3n, (5 2n, r ln, as much as possible in each measurement point. Here, each measurement point η (η = 1 to 33) 2αη, 10,000 η, ^ 占, 丨 3n, 5 2n, r 1 η target value on the same condition between the measurement points, calculate the adjustment parameters of α η, yS η, Τ 5η, 3 4η, 7 3η, 3 2η, rln approaching each target value As described above, when adjusting the adjustment parameters, the wavefront aberration of the projection optical system changes, etc. If each matrix PARA1P, ~PARA19p is used, the above 19 adjustments of the non-measurement point n (n=l~33) are used. For example, PARA1P, for example, PARA1P, for each element of the parameter Wa (the change of the Cni (i=1~37) term) is used for the parameter (the parameter is taken as the adjustment parameter PARA1 to PARA19). It can be expressed by the following formula: MM1P' 0 0 0 0 0 0 0 ▼ 0 0 0 0 0 0 0 feet, 0 0 0 0 0 0 0 wy 0 0 0 0 0 0 0 Ψγ] 0 0 0 0 0 0 0 W6} 0 0 0 0 0 0 0 (10), 97 (31) 1253105

In the formula, W a ′, W /3, W τ, and W ά can be expressed by the following formula: ^1,1 ... A, 37 I · · • · ; 33,37

^33.1 * * * Z ]¥β, 7 2 zu ΖΛ 2 ... z 2 • u ^1,37 7 2 Z33,372 1,1 z 1,37

V 7 2 Ύ 2 Ί U ··· Zl,37 1 ^33,1 ^33,2^33,1 z 2 33,37 7 2 厶33,1 2 ... Z 2 33,2 ^33,37 In the formula, each matrix ",, \^,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Η'1 Therefore, as shown in the following equation (32), if the matrix PARAlpn is applied to the column vector zs (using the sensitivity of each of the above-mentioned systems as symplectic, K, and + 罟), adjustment parameters can be obtained. P ARA1 is set to a曰曰, the mother of the early position of the measured point η coefficient change (for example, 'α n (pl)) column vector β, [ ί ]. α / Ρι) «33 (Ρ 1) Α(Ρ1) β^1) y5/household 1) 98 1253105

B'[l] = PARAIP'ZS

R533 A (corpse 1) (corpse 1) (32) ri 33 (corpse 1) (corpse 1) 033

04/household D 岣,1) 02 wide)

0233 (4) Similarly, for the adjustment parameters PARA2' to PARA19, the column vector Β '[2]~ Β, [19] of the coefficient variation amount per unit amount of the measurement point η can also be obtained. Here, the longitudinal amount of each adjustment parameter adjustment amount is taken as the longitudinal amount Ρ shown by the following formula (33). Ρ = ADJI ADJ2 (33)

The change in the adjustment amount of the ADJ19 CD_focus curve to the adjustment parameters PARA1 to PARA19 can be expressed by the following equation (34). /,= [1] + da/2 · 5, [2] + · · U19 · [19] (34) Here, the adjustment amount of the adjustment parameter and the CD-focus curve brought by the adjustment amount are used. The above relationship of the coefficients is calculated by the following calculations to achieve uniformization of the respective dot patterns. That is, let the CD-focus curve each 99 1253105 coefficient target value column vector be f, and now the column vector of each coefficient in the * t wish is f, by the aforementioned column vector B, [l] ~ 1 from The matrix formed by the combination of the person's day u 乂L19] is B, and the relationship of t can be expressed by the following formula (3). (35) If the least square method is used to solve the above equation, then the following equation is obtained. Ρ = (ΒΤ· Β)-ι· BT(ft— f) (36) where BM is the transposed matrix of the matrix B described above, and the inverse matrix of (βΤ·(Βτ · Β). In the adjustment method, the main control unit 5 calculates the adjustment vector n' of the adjusted 篁 column vector Ρ' using the above equation (10). In order to obtain the _ direction 4 p using the equation (36), it is necessary to Measuring the target value of each coefficient of the CD-focus curve (ie, the column vector ^), but here, preferably, as described above, in order to improve the in-plane: sentence: image of the isolated line pattern image, for each quantity The function y' of the measuring point sets all the target values of the coefficients of the order to the same value. Secondly, the adjustment method for adjusting the width difference of the vertical and horizontal lines is explained. When the prediction method and the position of the reticle to the measurement line shown in Fig. 5 are described, if the above-mentioned prediction method is executed, the (3)-focus curve is at the same measurement point. In the case, the same amount of ADn~adjustment amount ADJ19 as in the above formula (36) is used, but as described above, two 俨λ & ^ in order to pay two CD·focus curves at each of the $ measuring points, The coefficient matrix 匕 and f , and the number of elements of f of the above formula (30) (33 >< 7 = 231) are twice (i.e., as), 100 1253105, if the vertical line pattern corresponding to the same measurement point is When the target value of the horizontal line pattern coefficient is set to the same value, the adjustment amount ADJ1 to ADJ19 which minimizes the width difference of the vertical and horizontal lines can be calculated. The eight-person main control device 50 is adjusted according to the amount of adjustment ADJ1 stored in the device 42. Adjusting *ADJ19, as in the above, at least one of the position and the mode of the movable lenses 13i to 13s is adjusted by the imaging performance correction controller 48, and the main control device 5 is adjusted in accordance with the above-mentioned operations. 9. Give a command to the light source 16 to offset the illumination light. .

Further, in the present embodiment, in the state after the adjustment of the projection optical system PL or the like, the above-described steps 202 to 3f can be further performed to predict the adjusted measurement points < The curve further repeats the above-mentioned evaluation method and the adjustment method, so that the rotation state of each of the set point patterns is gradually approached and uniformized. V Coin Younawo)

In the exposure process for manufacturing a semiconductor device, the component is manufactured: the wire R is mounted on the reticle "RST, and the above-described operation is performed. Further, in the exposure apparatus (10) of the present embodiment, when the exposure by the step-and-scan method described above is performed, the adjustment amounts Ad to ADJ18 of the wafer w center in the exposure area are calculated. The control system is the same as described above. Further, in the present embodiment, the temperature is increased, and the pattern of the exposure condition or the father of the reticle is changed to the actual transfer pattern, which is changed by the Zanike sensitivity (including the U map, the first 21, 23, ^ 3, and the changes in the components of the 101!2531〇5 Nike items shown in Figure 28, so to re-determine these sensitivities, of course, the above prediction method must be re-executed. Evaluation method and adjustment method. - As described in detail above, according to the above prediction method, according to the linear combination value of the complex term (including the aberration components obtained by expanding the wavefront aberration w(Pj) series of the projection optical system respectively~ 37), can find the CD_focus curve (about the transmission through the projection optical system

The curve of the pattern of the two projections). Therefore, instead of using the imaging simulation brought about by the complicated calculations that require a large amount of different time, the extremely simple difference is obtained (the equation including the components of the aberrations Cn i (n = 1 to 33, i = 1 to 37) is obtained. The linear combination value), under a predetermined exposure condition, can predict the CD_focus curve of the pattern image through the projection optical system PL of the predetermined aberration state, and according to the prediction result, the projection image of the pattern can be predicted for a short time (or The characteristics of the print). Moreover, according to the prediction method, the projection optical system can also be calculated based on the linear combination of the movement of the CD_focus curve and the items of the aberration components Cn i (n=1 to 33, i = 1 to 37). The wavefront aberration w( p0 ) of PL

Due to the deformation of the CD-focus curve, the CD-focus curve can be predicted with higher precision. Further, according to the prediction method, the movement of the CD-focus curve about the direction of the size axis (the direction in which the line width changes) is not only in the square of each aberration component Cn,in has the sensitivity 'and the aberration components are mutually different The cross terms also have sensitivity. Further consideration of the linear combination of these cross terms makes it possible to predict the amount of movement in the direction of the size axis more accurately. In addition, if the prediction method is used, the coefficient of the odd-order term of the difference function representing the deformation of the variation function of the measurement point η is in the unfolding 102 1253105 Wavefront aberration W(p, 0) of the projection optical system PL In the time-variation components Cn,i (n=l~33, i=l~37), because of the sensitivity, the difference function y can be predicted by the linear combination of the components of each of the Zernike terms Cn,i. The coefficient of the odd order term of 'n. Moreover, since the coefficient of the even-order term of the difference function y'n is sensitive to the square Cni2 of each Zernike component, the even-order term can be predicted by the linear combination of the squares Cn5l2 of the components of each of the components. With the coefficient, the deformation of the CD-focus curve can be predicted in a short time and with high precision. Further, if the above evaluation method is used, the prediction method for the transmission projection optical system can be predicted in a short time and with high precision for each measurement point in the effective field of view of the projection optical system PL under the predetermined exposure conditions. According to the predetermined pattern image projected by the PL, the characteristics (for example, uniformity) of a predetermined pattern image in the effective field of view of the projection optical system PL can be accurately evaluated in a short time based on the cd-focus curve. Further, if the adjustment method of the evaluation method is used, the evaluation method of the present embodiment is used to evaluate the uniformity image of the 疋 pattern image in the effective field of view of the projection optical system PL, and adjust the transmission according to the evaluation result.

: The state in which the predetermined pattern of the optical system PL is formed. Therefore, the characteristics of the predetermined pattern image can be adjusted to the desired state (for example, the direction of the uniformity of the print) according to the result of the j-be. Further, the prediction method of the above embodiment assumes that the projection optical system = "when aberration" is a function of the (3)-focus curve obtained by the adjustment, and although there is only a tenth order function of the even order term, the present invention does not. It is limited to the 'adjusted function of the age of Xi Tianshi. ^ Take two P from the number can also be 8 times or less, but also 12 丨 ..., - how, better to adjust the CD_ focus curve function is higher 丨 103 1253105 even function . The method, although the difference function is below the order, but also the sixth-order function of the above-mentioned embodiment of the difference function of the sixth-order or higher, but the function may also be a predictive method of the four-in-one mode, which will be configured corresponding to each measurement point. The pattern of the reticle is used as a pattern of a vertical line pattern and a horizontal line pattern (ie, a cross pattern), or an isolated line pattern, but the present invention is not limited to this, and may be a plurality of parallel line patterns ( The L/S pattern) can also be a cross-pattern! or a pattern of combined parallel line patterns. Further, it may include not only a vertical pattern, a case, but also a line pattern extending obliquely. Further, when the pattern is used, the line widths of the line patterns at both ends of the l/s pattern are predicted by the prediction method of the present embodiment, and the line width difference (that is, the line width abnormality is evaluated by the evaluation method of the present embodiment). In the same manner as the adjustment method of the present embodiment, in the state in which the pattern image is formed, when the line width abnormal value is reduced and the exposure is performed, high-precision exposure can be performed. Further, in the evaluation method of the above-described embodiment, the line pattern in-plane uniformity, the vertical and horizontal line width difference, and the line width abnormal value are used as evaluation items, but the present invention is not limited to this, and the CD-focus curve can be evaluated. All projects are considered as e-parity projects. Further, in the evaluation method of the above-described embodiment, the respective measurement points of the effective field of view of the projection optical system PL are predicted in a short time and accurately, and the predetermined pattern image projected through the projection optical system pL under a predetermined exposure condition is used. CD-focus curve, according to the CD_focus curve, for the evaluation 104 10453105 projection optical system PL has a description of the characteristics of the θ P " undefined pattern image (for example, 杓 hook) ★ „ ^ &lt The method of knowing the 5th is not limited to this. That is, the information of the wavefront aberration of the projection optical system Λ一丰/, can be obtained, and the image of the pattern projection image is obtained in the month of the month. It is possible to use the wide-ranging and sensible sensations on the above-mentioned projection images (which are based on a soil-first-^ 骒坆二贝矾, using the Chanek polynomial, and expanding the wavefront aberration series into a complex ^ ± gram term) This interaction affects the 'historical' of the combination of the above-mentioned projection image characteristics and the combination of the Zonikek item, and evaluates the characteristics of the above-mentioned figure. This situation is also tested

To evaluate the characteristics of the pattern image by considering the change in the image of the image of the above-mentioned projection image (the cross-term of the combination of any of the parameters of the image that affects the image of the image) Therefore, the characteristics of the pattern image can be evaluated with higher precision. Further, in the evaluation method of the above-described embodiment, the optimum adjustment amount calculated by the above formula (36) is automatically adjusted by the imaging performance correction controller 4" under the control of the main control unit 5? The present invention is not limited thereto, and the imaging performance and the like of the projection optical system may be manually adjusted in accordance with the aforementioned adjustment amount. Further, in the prediction method of the above embodiment, various modifications can be considered. Further, the above-described embodiment is explained by a series of processes described below. The evaluation method of the pattern transfer state of the exposure apparatus 1 is evaluated based on the prediction method of the CD-focus curve and the predicted cd-focus curve. According to the evaluation result, the method of adjusting the pattern transfer state and the exposure method after the adjustment are performed; however, it is not necessary to perform all the methods by a series of processes. The prediction method, the evaluation method, and the adjustment method of the present invention are respectively 105. 1253105 Performers independently or in any combination. After that, after the execution method and its variants are executed in various modifications of the evaluation method and the adjustment method, the price method, the adjustment method, and the various items of the exposure method are used as the evaluation item method, and the exposure method is repeated by the step-and-repeat method. Method, exposure method. The prediction method that continues the above embodiment is also in the prediction method. Further, in the prediction of the above-described embodiment, in addition to the evaluation of the above-described embodiment, various evaluation methods such as the above-described evaluation method and the manual adjustment method can be applied and adjusted.

In the case of the description, in the case of the wavefront aberration measuring device used for the wave measurement of the projection optical system, it is also possible to use a wavefront aberration measuring body having a shape that can be replaced with the wafer holder. The wavefront aberration measuring device can also move the wafer or wafer holder to the wafer table WST t, and the outer B my 曰... "fixed from the WST, using the carry-out transfer", the next day 51 loader, etc. Automatically 曰...t order automatic relocation. And the above embodiment "

The door wavefront aberration measuring device 8〇 can be freely loaded and unloaded, and can also be set as “疋°. At this time, it is also possible to set only one of the wavefront aberration measuring devices 80 to the wafer table, and to arrange the other portions outside the wafer table. In addition, the wind:: yoke type ignoring ignores the wavefront aberration measuring device 8〇, and the other is the same as the aberration, but the wavefront aberration can also be used to determine the thinning. , the production line of the 吏 吏, ,, Μ唬 Μ唬 之 之 之 揭示 揭示

The position of the latent image of the latent image forming the test pattern transferred by the alignment system and the ALG reference f 备 is offset from the latent image of the detection measurement pattern. 106 1253105 In the case, it is also possible to use a photoresist or a doped nine-magnetic material as a substrate such as a wafer.

The photosensitive layer on it. By this method, I* does not have to pass through the operator or the service engineer, and the exposure device 100 can be self-contained by the exposure device 100 to visually adjust the projection optical system PL. Further, in the above-described embodiment, the optical element of the projection optical system pL is moved to adjust the imaging performance, but is not limited thereto, and may be added to the drive mechanism 'or replace the mechanism', for example, using the change projection optical system PL. The mechanism of the gas pressure between the optical elements is a mechanism for moving or tilting the reticle #r to the optical axis direction of the projection optical system, or changing the optical thickness mechanism of the parallel plane plate disposed between the reticle and the crystal lens. . However, in the above embodiment, 19 adjustment parameters are used. However, the number and type of the adjustment parameters may be arbitrary. For example, the driving amount of the wafer surface (wafer platform wst) or the wavelength shift of the illumination light EL may not be included. Wait. Further, although the above embodiment has been described with respect to the case where the scanning exposure device is used as the exposure device, the present invention is not limited thereto, and for example, a step-and-repeat type exposure device may be used. The use of the exposure apparatus in this case is not limited to the semiconductor-exposure apparatus for manufacturing, and can be widely applied to, for example, an exposure apparatus for liquid crystal which can transfer a liquid crystal display element pattern to a prismatic glass plate. An exposure device such as a display device such as a slurry display or an organic EL, a photographic element (Ccd, etc.), a thin film magnetic head, a microcomputer, and a DNA wafer. Further, in order to manufacture a reticle or a hood used for a micro component such as a semiconductor element, a light exposure device, an EUV exposure device, an X-ray exposure device, and an electron beam exposure device, the present invention is also applicable to switching a circuit pattern. It is printed on a glass substrate or a silicon wafer, etc., exposed to 107 1253105 optical devices. Further, the light source of the exposure apparatus of the above-described embodiment is not limited to an ultraviolet pulse source such as a & laser two ArF excimer laser or a KrF excimer laser, and a continuous light source can be used, for example, a g-line is emitted (wavelength is 436 nm). ), an ultra-high pressure mercury lamp with a bright line such as an i-line (wavelength of 365 nm). Further, an X-ray, in particular, Euv light or the like can be used as the illumination light EL.

Also, it is also possible to use a fiber amplifier with # oblique (or both 铒 and 镱) to amplify the single-wavelength laser light from the infrared domain or the visible region of the laser beam that is oscillating from the ray (4) fiber laser, & With nonlinear optical crystallization, the waveform is converted to a high-order spectral wave of ultraviolet light. Further, the magnification of the projection optical system is not only a reduction system but also any one of the equal magnification and amplification systems. Further, as far as the projection optical system is concerned, it is not limited to the refractive system, and a reflection refraction system having a reflective optical element and a refractive optical element or a reflection system using only a reflective photo element can be used. Further, when a catadioptric system or a reflection system is used as the technical optical system PL, the position of the reflective optical element (concave mirror, mirror, etc.) is changed to the projection optical system in the above-described movable optical element. Imaging characteristics. Further, in the case of the illumination light EL, in particular, when the Ah laser light or the EUV light is used, the projection optical system PL can be regarded as a total reflection system (only composed of a reflective optical element). However, when Ah laser light or EUV light or the like is used, the reticle R can also be regarded as a reflection type. In addition, when the exposure apparatus 1 or the like is manufactured, first, an illumination optical system 12 including an optical element such as a plurality of lens elements and mirrors is assembled as a unit cell, and the projection optical system pL is used as a projection unit. Make a single 108 1253105. In addition, a reticle a consisting of a number of mechanical components, Li Yan, is assembled as an early element. Further, in order to perform the desired performance for each unit, optical and electrical adjustments are performed. Χ,~:= 调整 Machine adjustment, projection optics 2...When the whole process is completed, the adjustment method of the projection system described in the above embodiment or the transmission projection system can be used for the 'Prince Privet PL'. The method of adjusting the pattern image characteristics of at least part of the evaluation method; πInto Next, the illumination optical system 12 and the projection optical system PL are assembled in a body of the exposure apparatus, and the reticle stage system and the wafer stage system 4 are attached to the exposure apparatus body to connect the wiring and the piping. Next, the illumination optical system 12 and the projection optical system are further advanced: optical adjustment is performed. This is because before and after the exposure apparatus, some of the optical systems' are particularly subtle changes in the imaging performance of the projection optical system PLt. In the present embodiment, when the optical adjustment of the projection optical system PL is performed after being incorporated in the main body of the exposure apparatus, the wavefront aberration measuring device 80 is mounted on the wafer table WST, and the measurement is performed in the same manner as described above. Wavefront aberration, the measurement result of the wavefront aberration is input to a computer, and the adjustment amount of each of the 6-degree-of-freedom directions of each lens element is calculated by the same procedure as described above, and the calculation result is displayed on the display of the computer. . Further, according to the display, each lens element is adjusted by a technician (operator) or the like. As a result, the adjustment of the projection optical system pL which satisfies the desired imaging performance is completed. In addition, at this stage, since it is possible to judge the aberration that cannot be corrected, it is mainly a high-order aberration, and the aberration is automatically adjusted. Therefore, it is preferable to re-adjust the installation of the full lens of 109 1253105. When Umeda fails to obtain the desired performance by the above re-adjustment, the two lenses must be reworked or replaced. Further, in order to facilitate the reworking of the optical element of the projection optical two-"PL, when the projection optical system is assembled, the wavefront aberration is measured using a dedicated wavefront measuring device, and the measurement is performed according to the measurement. As a result, the presence or absence and position of the optical element that needs to be reworked can be performed simultaneously with the re-processing of the optical element and the re-adjustment of other optical elements. / Then, the overall adjustment (electrical adjustment, operation confirmation, etc.) is performed. ▲ Incorrectly, the exposure apparatus such as the exposure apparatus i 〇 is manufactured in this embodiment, and the exposure apparatus can use the projection optical system π which adjusts the optical characteristics with high precision, and the pattern of the line #R is rotated with high precision. It is printed on the crystal wafer w. Further, the exposure apparatus is preferably manufactured in a controlled clean room such as temperature and cleanliness. (Component manufacturing method) Next, the component manufacturing method using the above exposure apparatus is applied to the lithography process. Fig. 33 is a flow chart showing a manufacturing example of a semiconductor wafer, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc., as shown in Fig. 33. In step 4 (design step), the function and performance design of the component (for example, the circuit material of the semiconductor component, etc.) is used to realize the pattern design of the fourth function. Secondly, in the stepping technique (the hood) In the step), a hood for forming the designed circuit pattern is formed. In the gamma step 403 (wafer manufacturing step), a wafer is manufactured using a material such as Shi Xijing to 110 1253105. Next, at step 404 In the (wafer processing step), the hood and the wafer prepared in the steps 4 (8) to 4 4 are used, and the actual circuit is formed on the wafer by micro-operation or the like as will be described later. Next, in step 4 In 〇5 (component assembly step), the wafer processed by step 404 is used to perform component=loading. In this step 405, if necessary, the cutting process and the bonding process are included:

And packaging process (wafer sealing) and other processes. Finally, in step 406 (inspection step), step 4〇5 is made.

Check the test, durability test, etc. After the process, the component is completed and the component is shipped. And Fig. 34 is a view showing a detailed flow chart of the above steps 4 to 4 in the semiconductor device. In the 34th ®, in step 411 (oxidation step), the wafer is surface-oxidized. In step 412 (CVD step), an insulating film is formed on the surface of the wafer. In step 413 (electrode forming step), a vapor (four) electrode is formed on the wafer. In step 414 (ion implantation step), ions are implanted into the wafer. Each of the above steps 411 to 414 constitutes a step of wafer processing.

The process is processed before the segment, and at each stage, the process is selectively performed as required. At each stage of the wafer process, if the above-mentioned prior process is completed, the post-processing is performed as described below. In this post-treatment process, first, in step 415 (photoresist forming step), a sensitizer is coated on the crystal circle. Next, in step 416 (exposure step), the circuit pattern of the hood is transferred onto the wafer by the exposure apparatus and the exposure method described above. Next, in step 417 (development step), the exposed wafer is developed 111 1253105. In step 41 8 (the engraving step), the portion of the light-emitting portion other than the photoresist is removed by button etching. Further, in step 419 (the photoresist removal step, the photoresist is removed by etching. * Repeat these pre-processing and post-processing processes to cut the wafer into multiple circuit patterns. 〃 If using U on $ According to the element manufacturing method of the present embodiment, in the exposure process (step 416), since the exposure apparatus of the above embodiment is used, it is possible to effectively reduce the line of the transfer images of the vertical line pattern and the horizontal line pattern. The width difference or the line width of the isolated pattern is well exposed. Therefore, the yield of the final product (element) can be improved, and the productivity can be improved.

As explained above, the present invention is applicable to the adjustment of mutually orthogonal line pattern images. Further, the characteristics of the pattern image of the predictive projection optical system of the present invention are suitable for evaluation. The transmission optical system adjustment method is suitable for adjusting the transmission state. Further, the exposure method of the present invention is transferred onto an object. Further, the production of the present invention. The method of adjusting the optical system is the projection optical system used in projection and the program is suitable for predicting transmission. Further, the evaluation method of the present invention is a characteristic of a pattern image. The pattern image forming and exposure apparatus of the shadow optical system of the present invention is suitable for applying the pattern element manufacturing method to the element.

BRIEF DESCRIPTION OF THE DRAWINGS (1) Schematic portion Fig. 1 is a schematic view showing the configuration of an exposure apparatus according to an embodiment of the present invention. 112 !253l〇5 Wavefront aberration of the figure Figure 2 is a cross-sectional view of the first measuring device, from micro-transparent from the microlens

Fig. 3A is a view showing the absence of the beam emitted from the mirror array in the optical system. T Figure 3 is a diagram showing the beam emitted by the array when there is aberration in the optical system. Fig. 4 is a view showing an adjustment method of the projection optical system PL for the purpose of adjusting the line width difference of the line graph in the orthogonal two-axis direction.

Fig. 5 is a plan view of the reticle for measurement from the side of the pattern side. Kaiming Figures 6A to 6F are diagrams showing the wavefront disorder of the pupil plane based on the values of the ninth and the twelfth items of the singularity polynomial of the wavefront aberration of the projection optical system. 7A to 7F are diagrams for explaining the wavefront disorder of the pupil plane based on the values of the fourth and fifth terms of the Detective Polynomial which spreads the wavefront aberration of the projection optical system.

Figure 8 is a CD-focus line for explaining the difference between the best focus position of the vertical line pattern and the horizontal line pattern, and the line width difference between the vertical line pattern image (V) and the horizontal line pattern image (H). Figure. The figure 9 shows that the KrF laser with a wavelength of 248·3 nm is used as the light source, the illumination p = 0.75 of 2/3, the illumination condition of the pupil, and the numerical aperture (ΝΑ) of the projection optical system PL = 0·68. An example of the line width difference (experimental result) of the vertical and horizontal lines obtained by the measurement of the line width of the photoresist image obtained by the pattern on the reticle. 113 1253105 Dijon) For a long time, the UW and m of Figure 9 are more detailed. P injury (part of the last 3 paragraphs) map (contour map). Figure u is a more detailed diagram showing Zi2 = _H - 40m; part of l (part of the last two paragraphs) in Figure 9. The difference 2 12A to 12D is a diagram for explaining the meaning of each contour map of Fig. 9. Fig. 13 is a graph showing an example of the calculation result of the intersection between the aberrations obtained by the simulation under the predetermined conditions. Fig. 14 is a view showing an example of the calculation result of the line width deviation ΔCD. The =15 graph is a graph showing the relationship between the calculation result of the conventional zs method and the calculation result using the space image. Fig. 16 is a flow chart showing a prediction method of an embodiment (Part 1). Fig. 17A is a diagram showing an example of a 1st order function, and Fig. 7B is a diagram showing an example of the adjustment error. Fig. 18 is a diagram showing an example of the Chanek sensitivity s |. Fig. 19 is a diagram showing an example of the calculation result of the linear slope by using a minimum square method by using a distance of 10 m λ to calculate the movement amount of the 11-point focusing direction by a distance of 50 m λ - 50 m λ . Fig. 20 is a diagram showing an example of the approximate result of the second-order function 'using the least squares method in the calculation result of the line width variation of 11 points which is the same as the image calculation in the case of Fig. 19. . Fig. 21 is a diagram showing an example of the Chanek sensitivity s calling i. 114 1253105 Figure 22A shows the cross-talk between & and z", and Figure 22b shows the cross-talk between z9 and z12. Fig. 23 is a view showing an example of the sensitivity of each cross term. Fig. 24 is a flow chart showing a method for predicting an embodiment (2) ° / and Fig. 25, showing an example of the sensitivity of the sensitivity of the Chanek term Sr 51. Fig. 26 is a diagram showing the sensitivity of the sensitivity of the Chanek term. Fig. 27 is a diagram showing the sensitivity of the sensitivity η of the gram. Figure 28 is a diagram showing the sensitivity of the Senig's term s to w. In the 29th figure, the sensitivity of the Chanek term is shown as an example of the sensitivity of the 2nd. The 30th figure shows the action of finding the cd-focus curve y, k, . 'A diagram showing an example of a CD-focus curve for calculating a representative measurement point by sophisticated imaging simulation, and FIG. 31 is a view showing the same exposure condition predicted by the prediction method of one embodiment of the present invention, using the same An example of a CD_focus curve of a representative measurement point of a pattern. Fig. 32 is a diagram showing the relationship between the calculation result of the ZS method using the new _ and the calculation result of the space image with respect to ΔCD in the line width deviation. Figure 33 is a flow chart showing an embodiment of the method for manufacturing a component of the present invention. Figure 34 is a detailed flow chart showing the step 204 of Figure 33. (2) Symbol of the component

EL IAR Exposure Lighting Field 115 12553105 照射 Irradiation field (exposure field) LB laser beam 反射 mirror PL projection optical system R reticle RST marking station TS control information w wafer WST wafer table 11 chamber 12 Illumination optical system 13 Refracting optical element 13 wide 135 Lens element 15 Optical aperture aperture aperture 16 Light source 17 Light transmission window 20 Illumination equalization system 22 Light integrator (flip eye lens) 24 Illumination system aperture diaphragm 28A 1st relay lens 28A 2 relay lens 30A fixed reticle blind 30B movable reticle blind 32 concentrating lens

116 1253105 42 Memory device 44 Display device 45 Input device 46 Analog computer 48 Imaging performance correction control 50 Main control device 54R Screen interferometer 54W Wafer interferometer 60a Irradiation system 60b Receiver system 80 Wavefront aberration measuring device 82 Frame Body 82a Circular opening 84 Receiving optical system 84a Objective lens 84b Relay lens 84c Curved mirror 84d Collimating lens 84e Microlens array 86 Light receiving portion 88 Glass cover 100 Exposure device

117

Claims (1)

W105 % i2: Medium: The 2nd order rotational symmetry component is 4th order c. In the fourth item of the sub-item, the ninth item of the fourth-order 〇 θ component of the symmetry component is ninth item. Among them, the adjustment method of the projection optical system of item 2 of the patent scope is 1 3, 2 2 P The symmetrical component system 4 15 is the ninth term of the Sin2 β component term, and the wide rotational symmetry component term is the fourth order 〇 θ component term. For example, in the adjustment method of the projection optical system of the second item of the patent scope, the information of the wavefront aberration is obtained by directly measuring the wave of the projection optical system by the π:Hai 1st process. In the sixth method, the adjustment method of the projection optical system of the second paragraph of Patent No. 15 is the first method of the first embodiment, and the size of the first surface is different from the first line pattern and the second line. The line pattern is optimal at the time of image formation, and the difference between the two sets is measured in each group. According to the measurement result, the information of the symmetrical component is used as the wavefront aberration. Information For example, the adjustment method of the projection optics (4) of the second application of the patent scope is as follows: in the (4) 3 process, the size of the second-order rotationally symmetric component is not zero, and the line width measured by the third process is measured. When the difference is not zero, the projection optical system is adjusted according to the size of the second-order rotational symmetry component and the line width difference, so that the line-width difference approaches the design value to adjust the projection optical system to make the second order The size of the rotationally symmetric component of the same order of the rotationally symmetric component is optimized. 8. The method of adjusting a projection optical system according to the scope of the patent application, wherein the second process comprises: forming a 119 1253105 on the object disposed on the second surface. And a line width measurement process for measuring a first line width of a line width of the first line pattern image formed on the object and the second line formed on the object The pattern is like the second line width of the line width. "" 9. The method of adjusting the projection optical system of the second paragraph of the patent application, wherein the third process is by at least one optical component constituting the projection optical system. At least one of the control and the pressure control of the gas in the portion = optical path controls the magnitude of the second optical characteristic. + 1〇, as in the adjustment method of the projection optical S system of the first item of the patent scope, 'the '1-line pattern is a vertical line pattern, the second line pattern is a line pattern; ' ί' the first optical characteristic And the second optical characteristic is determined by the following process: a process of determining the Channier sensitivity in the cross term of the combination of the Zernike terms for the line width of the vertical line pattern image and the horizontal line pattern image; and The process of the combination of the Chuck items in the cross-section and the Chuck items in the cross-section. 11. The method for adjusting the projection optical system of claim i of the patent scope 'where the information obtained by the process 1 is the information of the wavefront aberration of the projection optical system; the first and second optical characteristics are Using the singularity polynomial, in the series of wavefront aberrations obtained by the series expansion (4) i process, the items of the same order and different types of components are found. 120 1253105 2. An exposure method for transferring a circuit pattern on a first surface to an object disposed on a second surface through a projection optical system, comprising: an adjustment process, using a patent application scope 1 to 1 The method for adjusting a projection optical system according to any one of the items 1 to adjust the projection optical system; and the transfer process for transferring the circuit pattern onto the object using the adjusted projection optical system. ^ 13. An exposure apparatus for transferring a pattern formed on a hood to an object through an optical system for exposure, characterized in that: the adjustment of the projection optical system of the first application of the patent scope is adjusted. The projection optical system serves as the optical system for exposure. ^14. A method of adjusting a projection optical system, wherein the pattern image on the first surface is projected on the second surface, and includes: I, a first process, and the projection optical system is included Information on the optical characteristics of the second optical characteristic; and g the second process ' is the value of the first optical characteristic obtained by the first process, and the first! Adjusting the projection optical system to control the optical characteristics of f 2 by the difference between the line width of the pattern of the pattern extending in the predetermined direction and the line pattern of the second line pattern orthogonal to the i-th line pattern , f, the second optical characteristic is due to the interaction with the first optical characteristic, and the right and wrong by the projection optical system continues to struggle 4, the production of poor ("four" 1 line pattern image on the 2nd face of the brother and the brother The 2-line pattern affects the line width difference of the line width. 121 1253105, the adjustment square line pattern of the projection optical system of the 14th item of the Shishen δ Qing patent range, the first line pattern is a vertical line pattern, the second line The line pattern is horizontal and horizontal: the light pre-characteristic and the second optical characteristic are obtained by changing the line width of the vertical line graph 秩 X-rank line pattern image to obtain the apricot in the Zagnek group, and the person/# ~ The process of the Nike sensitivity, and the process of determining the combination of the Zanike:degree payment number in the cross-term is different from the combination of the Zanike items in the vertical and horizontal lines. +16. An exposure method is to transfer a %-way pattern on the first surface to an object disposed on the second surface through a projection optical system, wherein a wind adjustment process is used in the patent range 14 or The projection of the 15 items, the adjustment method, and the adjustment method to adjust the projection optical system, and the transfer process, use the adjusted projection optical system to transfer the circuit pattern onto the object. ...17, the type of exposure apparatus 'transfers the optical system of the exposure, and the pattern formed on the U-shield is transferred onto the object, and is characterized by the projection optical system of the 14th item of the patent scope in use. The projection optical system of the adjustment method is used as the optical system for exposure.调整 8 method for adjusting an optical system of a technical shirt, wherein the projection optical system projects a pattern image on the i-th surface on a second surface, and is characterized in that a process for acquiring wavefront aberration information of the projection optical system is obtained; The process of information on the pattern projection image; and 122 1253105 adjustment process, considering the use of the Chanek polynomial to spread the wavefront aberration in a plurality of Zernike terms, the interaction of the projection image characteristics The projection optical system is adjusted by the cross-term of any combination of the Zernike items that affects the Chanek sensitivity of the characteristics of the projected image. 19. The method of adjusting the projection optical system of claim 18, wherein the pattern comprises a line pattern; the characteristic of the projected image comprises a line width of the line pattern. 20. An exposure method for transferring a circuit pattern on an i-th surface to an object disposed on a second surface through a projection optical system, wherein the method comprises: an adjustment process, wherein the patent application scope is used The method of adjusting the projection optical system of item 8 or item 19 to adjust the projection optical system; and the transfer process for transferring the circuit pattern onto the object using the adjusted projection optical system. 21. An exposure apparatus for transferring a pattern formed on a hood onto an object through an optical system for exposure, characterized in that: _ having an adjustment method using a projection optical system of claim 18 The entire projection optical system serves as the optical system for exposure. 22. A method of manufacturing an exposure apparatus for transferring a pattern formed on a hood to an object through a projection optical system, comprising: applying the patent scopes 1 to 11, 1 and 1, 5. The adjustment method of the projection optical system of any of the items of 8, 8 and 19 to adjust the process of the projection optical system 123 1253105. An exposure apparatus for illuminating a pattern disposed on a surface by using an energy beam, and transferring the pattern to an object disposed on the second surface through a projection optical system, comprising: an optical characteristic amount Measuring device for measuring optical characteristics including a first optical characteristic of the projection optical system; and a line width measuring device for measuring the third surface formed by the projection optical system on the second surface a first line pattern image extending in a predetermined direction and a line width of a second line pattern image orthogonal to the first line pattern; and an image forming state adjusting device for adjusting a pattern image formed by the projection optical system a state of formation; and a control device based on the value of the optical characteristic of the younger one measured by the optical characteristic measuring device, and the line width of the first line pattern measured by the line width measuring device The line width difference between the 帛i line width and the second line width of the second line pattern line width is controlled by the image forming state adjusting device to control the line width difference due to the interaction with the first mechanical property. Influence of the second light The size characteristics. The exposure apparatus of claim 23, wherein the photon characteristic measuring device measures a wavefront aberration measuring device for wavefront aberration of the projection optical system. / 25. The exposure apparatus of claim 24, wherein the twelfth characteristic is to use a Chanek polynomial to expand the wavefront aberration measured by the wavefront image measuring device. The turban 4 p is more than the second-order rotational symmetry component, and the second optical secret is a rotationally symmetric component of the second order 124 with the same order of 3% 〇5 to the % component. 26 tb, such as the exposure device of claim 25, wherein the 2 疋 对称 symmetry component is the 12th and 20th components of the 4th order 20th component - the work gentleman only <-, 'the The rotationally symmetric component term is the ninth term of the fourth-order 〇θ component. For example, the exposure apparatus of claim 23, wherein the line includes a spatial image measuring device for measuring projection images of the patterns formed on the second surface. For example, in the exposure apparatus of claim 23, the wide-measurement nightmare-human clothing' includes a photographing apparatus for photographing an image formed on an object disposed on the second surface. The exposure device of claim 23, wherein the image formation control device is configured to at least one optical element constituting the projection optical system to produce a degree of freedom of one degree of freedom. Position adjustment, 5 weeks of the body pressure in a part of the optical path, the adjustment of the wavelength shift of the energy beam, and the optical axis direction of the projection optical system of at least one of the pattern forming member formed by the pattern and the object In the adjustment, at least one adjustment is made. 30. A method for manufacturing a component, comprising a lithography process, wherein the lithography process is performed by using an exposure device of any one of claims 13, 17, 21, 23 to 29 of the patent application scope. Exposure. 31. A method for predicting a pattern image characteristic, which predicts a characteristic of a pattern image formed by a projection optical system, comprising: knowing a series expansion based on a wavefront aberration of the projection optical system using a predetermined expression The knife has a linear combination of the plural items of the aberration components. 125 1253105 Insect: the variation curve of the display (the image size is relative to the deviation = the projection of the projection optics (4) under the condition of the (four) light (= The variation of the τ defocus amount is caused by the shift of the wavefront aberration = Χ ^ to predict the variation curve. 32. W Please select the pattern image characteristic of the 31st patent range, 'two orders for the prediction. Before the process, under the exposure conditions, assuming that there is no aberration in the projection optical system, '·= is determined to determine the variation curve of the size of the image relative to the variation of the amount of divergence. The obtained variation curve approaches the process of the higher-order function. 33. The prediction process of the pattern image characteristic of the 32nd item of the patent scope is based on the aberration components (the established eye: " The sensitivity of each of the aberration components to the defocus amount is linearly combined as a binary value, and the movement of the variation curve in the direction of the defocus amount is calculated, and the aberration component is determined according to the predetermined component. Under the exposure condition, the square of the composition of the product of the Shih-Hai is the linear combination of the change of the size of the image as the linear combination of the magical squares of each system'. Calculate the large momentum of the change curve. 々 移 34, as in the scope of patent application 33 The method for predicting the pattern image characteristics, wherein the 'predictive process' is in addition to the linear combination of the squares of the aberration components described above, and also according to the respective intersections (which are different from each other under the predetermined exposure conditions:: aberration components are mutually different A linear combination of the coefficients of the image size change, and the calculation of the variation curve; J = the amount of movement. 126 1253105 35, as in the prediction method of the pattern image characteristics of claim 32, wherein The higher-order function is a function consisting only of even-order terms. 36. As in the prediction method 1 of the pattern image characteristic of claim 31, the edge prediction process, Deformation of the wavefront aberration caused by the variation curve is calculated based on a linear combination of the complex items including the respective aberration components, and the variation curve is predicted based on the amount of movement and the deformation. 37 The method for predicting the pattern image characteristics of the item % of the patent application scope: wherein 'before the prediction process' further comprises: a high-order assumption that the projection optical system has no aberration under the undetermined exposure condition, and the representation is obtained by simulation The variation of the image size on the variation of the defocus amount, and the obtained variation curve is approximated to the process of the higher-order function. The prediction method of the pattern image characteristic according to the 37th patent of the patent application, wherein the prediction is Before the process, the process further includes calculating the process, and the king system transmits the projection curve of the actual aberration state, and receives the variation curve of the pattern image after the projection is determined by the predetermined exposure; For the process, find the difference function (transfer - 鶫 》 》 & HA, (the table is not based on the same amount of function, and the representation Calculating the change process the obtained difference curve function parts), the variation curve of the situation changes. 39, as the result of the wavefront aberration, as in the forty-eighth of the patent application, wherein the calculation process is a method for predicting a square temple, 40, as in claim 38, wherein the prediction process is based on Each component, the prediction method of the aberration is the aberration component (the sensitivity of the even-order term of the difference function is squared as the coefficient of each of the differential components of 127 1253105 ίτ, the square of each aberration component) Linearly combining, calculating a coefficient of an even order term of the difference function; the prediction process is based on the aberration components (the odd-order terms of the difference function of each aberration component under the predetermined exposure condition) The sensitivity is linearly combined as the square of each coefficient, and the coefficients of the odd-order terms of the difference function are calculated. '41. For example, the method for predicting the pattern image characteristics of Article 31 of the patent application scope is the formula for judging the singularity polynomial, and the aberration components are the coefficients of each of the SAR. ^ 42 evaluation methods for pattern image characteristics, which are characteristics for evaluating a pattern image transmitted through a projection optical system, comprising: a prediction process for using at least one measurement point in an effective field of view of the projection optical system The prediction method according to any one of claims 31 to 41, wherein the projection optical system is passed through the projection optical system under a predetermined exposure condition, and the projection of the projection is at the at least one measurement point. The pattern image is called 'the size of the image, and the defocus amount from the best focus position is changed: and ^ evaluation system is based on the prediction result to evaluate the characteristics of the predetermined pattern. ' 3 Such as Shen Qing patent range 42 The evaluation method of the pattern image characteristic of the item 'where the predetermined pattern is arranged corresponding to each of the plurality of measurement points in the effective field of view of the projection optical system; the characteristic includes the image in the effective field of view of the projection optical system Clause 128 1253105, 44, evaluation method of pattern image characteristics according to item 42 of the patent application scope. The island is determined to have two line patterns, which are set: The :: : the optical axis direction is orthogonal to each other on the plane orthogonal to each other; the prediction x king ' is predicted in each of the line patterns to predict the variation curve. 45, the evaluation of the pattern image characteristics as in the 44th article of the patent application scope In the method, the evaluation process is such that the line width of the evaluation line pattern images is the image characteristic. 46. The method for evaluating the pattern image characteristics of claim 42 wherein the predetermined pattern comprises two line patterns which are disposed parallel to each other on a plane orthogonal to the optical axis direction of the optical system of the disk and the shirt; Λ whai predicts the private sector, which is predicted by each line pattern. 47. An evaluation method of pattern image characteristics according to item 46 of the patent application scope, wherein the evaluation process is a line width difference between the evaluation line pattern images as the image characteristic. < 48. A method for adjusting a pattern image formation, wherein a state in which a pattern image transmitted through a projection optical system is formed is characterized in that the evaluation process is included in the evaluation method using the evaluation method of item 42 of the patent application scope. The characteristic image of the predetermined pattern disposed in the effective field of view of the projection optical system to the completion measurement point; and the week 1 clothing system adjusts the predetermined pattern image transmitted through the projection optical system according to the evaluation result Forming state. 49. If the patent image range is 48, the adjustment method of the pattern image formation is performed in the middle of the method, and the unit of the adjustment parameter for adjusting the formation state of the 129 1253105 predetermined pattern image is used. The amount of change of the aberration components of the adjustment amount is a sensitivity of the aberration component to the size of the predetermined pattern image under the predetermined exposure condition, and a variation curve indicating the variation of the defocus amount of the predetermined pattern image size. The deviation of the target value of each of the coefficient coefficients is different from the adjustment amount of the adjustment parameter, and the formation state of the predetermined pattern image is adjusted based on the calculated adjustment amount. 50. The method for adjusting the pattern image formation according to claim 49, wherein the evaluation process separately evaluates characteristics of a predetermined pattern image arranged by a plurality of measurement points in an effective field of view of the projection optical system; 4. The weekly t process is such that the target value of the coefficient of the same term of the variation curve is the same between the measurement points. 51. The method of adjusting the pattern image formation according to item 49 of the patent application scope, wherein the predetermined pattern comprises a plurality of pattern diverges such that the target value of the coefficient of the same term of the variation curve is the same between the patterns. The adjustment method will be the first side' In the case of 52, the pattern image is formed as in the 49th article of the patent application, wherein the adjustment amount is obtained by using the least square method. 53. An exposure method, wherein the circuit pattern on the second surface is transferred to the object disposed on the second surface through the projection optical system, and the forming method of the method includes: The 43th week 'the pattern image through the projection optical system and 130 1253105 54 are used in: the component manufacturing method includes a lithography process, and the lithography process is characterized by the exposure method of the patent application model (IV) 53 items. . - 2: a method for evaluating the characteristics of a pattern image, which is a characteristic for evaluating the image transmitted by the projection light, and characterized by comprising: a process for taking the wavefront aberration information of the projection optical system; The process of casting the image information of the pattern; and the = system & 'reviewing the sensation of the sensation (4) the projection image (using the smuggling t: the wavefront aberration is expanded by the series of numbers) The characteristics of the pattern image are evaluated by changing the characteristics of the parental term of the group 5 of any item affected by the image characteristics. 56 The evaluation of the pattern image characteristics of the item μ of the towel 4 patent range, wherein the pattern is included The line width of the green and ^. The line pattern includes the line pattern 57, a method for adjusting the pattern image formation, and adjusts the formation state of the pattern image transmitted through the projection light to the system, and is characterized in that : Evaluation process, 俦 田 _ _ 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士Placed The characteristic of the predetermined pattern image; and the adjustment process, which is based on the state of formation of the predetermined pattern image of the evaluation result system. Μ Through the image of an exposed ancient surface, the pattern is transferred on the first surface: The optical system, the system '..., contains: on the object arranged on the two sides, which is characterized by the fact that 31 1253105 is used to adjust the pattern image transmitted through the projection optical system using the adjustment method of the 57th patent of the patent application. And a transfer process for transferring the pattern onto the object through the projection optical system in a state in which the adjusted image is formed. 59. The method for manufacturing a component includes a lithography process The lithography process uses the exposure method of claim 58. 60, a recording medium, which is useful for predicting the image characteristics of a computer through a projection optical system, characterized in that The program causes the computer to execute the following procedures, that is, according to the respective developments of the wavefront aberration series of the projection optical system using the predetermined formula. Linearly combining a plurality of terms of the aberration component to calculate a movement amount (corresponding to an image of a predetermined pattern projected through the projection optical system under a predetermined exposure condition, displaying the image with respect to a defocus amount from a best focus position) The variation curve of the dimensional change is caused by the wavefront aberration, and the prediction program of the fluctuation curve is predicted based on the calculated movement amount. 61. The recording medium according to the sixth aspect of the patent application, wherein the program Before the predicting step, the computer is further caused to execute the following procedure, that is, to assume that the projection optical system has no aberrations under the predetermined exposure condition, so as to display the variation of the image size to the defocus amount. A program that approximates a higher-order function. 62. The recording medium of claim 6 of the patent application, wherein the current system performs the following procedure as the prediction program: according to the predetermined exposure condition The respective aberration components are linearly combined with the sensitivity of the defocused denier 132 1253105 as the respective aberration components of the respective coefficients to predict the relevant The program 丨 of the amount of movement of the motion curve in the defocus amount direction and the linear combination of the square components of the coefficients of the respective aberration components as the respective coefficients under the predetermined exposure conditions A program for predicting the amount of movement of the variation curve in the direction of change in image size. 63. The recording medium of claim 62, wherein the program causes the computer to execute the following procedure as the prediction program, that is, in addition to linearly combining the square components of the aberration components, Further, a linear combination of the aberrations of the mutually different aberration components under the predetermined exposure conditions and the sensitivity of the image size change direction as a coefficient is calculated, and the movement of the variation curve in the image size is calculated. Quantity of programs. Open 64. The recording medium of claim 61, wherein the higher order function is a function consisting only of even order terms. / ^ 65. If the recording medium of the sixth paragraph of the patent application is applied, the computer directly executes the following procedures as a predictive program, that is, 栝" The linear combination of the plurality of terms of the aberration components is respectively included, and the 瞀 ▲ ' _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _记录, such as the recording medium of the patent scope of the 65th item, wherein the system further enables the computer to perform the following before the prediction procedure. That is, it is assumed that the projection optical system has no image under the predetermined exposure condition, so that the variation of the image size to the variation of the defocus amount is displayed in the program of the higher order function. 133 1253105 67. If the application of the patent scope is 66th, it is recorded in the media. In JL, the order is before the forecasting process, and the computer is executed in the first step. Under the condition, through the actual silly # Η projection optical system, calculate the predetermined pattern image after the shirting, the program μ image size changes the defocus amount as the prediction program, you said: The electric power is used to determine the difference between the higher-order function (moving according to the motion) and the variation function (the number of mountains (the one obtained by the above-mentioned different program) is the cause of the wave. The change in the curve is white program. /8. For the recording medium of the 67th patent scope, the program is to enable the computer to execute the following procedure to operate the prediction program: : According to the D Hai aberration components (the system will be in the established exposure) The procedure for predicting the coefficients of the even-order terms of the difference function by combining the sensitivity of the aberration components to the even-order terms of the return function as a line of the respective squares. Predicting the difference based on the line of each of the aberration components (the sensitivity of the aberration components of the difference function as the respective coefficients under the predetermined exposure conditions) The procedure for the coefficients of the odd-order terms of a function. 69. The recording medium of any one of claims 60 to 68, wherein the predetermined form is a Chanek polynomial, and the respective aberration components are coefficients of each of the obscenity terms. 70. An exposure method for transferring a pattern on a j-th surface onto an object disposed on a second surface through a projection optical system, wherein the method comprises: 134 1253105 adjusting a process, using a patent application scope 48th adjustment method for adjusting the formation state of the pattern image through the projection optical system; and the transfer process, in the formation state of the adjusted image, the pattern is transferred through the optical system Printed on the object 71, a component manufacturing method, the system includes a lithography process, and is characterized in that: the lithography process of the application of the lithography process uses the exposure method of item 70. Pick up, pattern: like the next page 135