TWI639886B - Method for maintaining reticle stage - Google Patents

Method for maintaining reticle stage Download PDF

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Publication number
TWI639886B
TWI639886B TW106136296A TW106136296A TWI639886B TW I639886 B TWI639886 B TW I639886B TW 106136296 A TW106136296 A TW 106136296A TW 106136296 A TW106136296 A TW 106136296A TW I639886 B TWI639886 B TW I639886B
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TW
Taiwan
Prior art keywords
photomask
carrying platform
mask
maintaining
reflective structure
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TW106136296A
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Chinese (zh)
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TW201917487A (en
Inventor
Hung-Chi Wang
王宏祺
Sheng-Hua Yang
楊盛華
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Powerchip Technology Corporation
力晶科技股份有限公司
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Application filed by Powerchip Technology Corporation, 力晶科技股份有限公司 filed Critical Powerchip Technology Corporation
Priority to TW106136296A priority Critical patent/TWI639886B/en
Priority to CN201711069037.XA priority patent/CN109696798B/en
Application granted granted Critical
Publication of TWI639886B publication Critical patent/TWI639886B/en
Publication of TW201917487A publication Critical patent/TW201917487A/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42Alignment or registration features, e.g. alignment marks on the mask substrates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046Strategy, e.g. mark, sensor or wavelength selection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

本發明提供一種光罩,其可置放於曝光裝置中的光罩承載平台上,此光罩包括一基板以及一反射結構。基板包括一主表面與至少一側壁,且主表面與側壁相接,其中主表面包括一圖案區以及一周邊區,周邊區設置於圖案區的一外側。反射結構至少設置於側壁表面或設置於主表面之周邊區。 The invention provides a photomask that can be placed on a photomask carrying platform in an exposure device. The photomask includes a substrate and a reflective structure. The substrate includes a main surface and at least one side wall, and the main surface is in contact with the side wall. The main surface includes a pattern region and a peripheral region. The peripheral region is disposed on an outer side of the pattern region. The reflective structure is disposed on at least the side wall surface or the peripheral area of the main surface.

Description

光罩承載平台的維護方法 Maintenance method of photomask bearing platform

本發明係關於一種光罩及光罩承載平台的維護方法,尤指一種能用於檢測光罩承載平台上之固定元件效能的光罩及光罩承載平台的維護方法。 The invention relates to a photomask and a method for maintaining a photomask carrying platform, and more particularly to a photomask and a method for maintaining a photomask carrying platform that can be used to detect the effectiveness of fixed components on the photomask carrying platform.

一般半導體元件須經繁複的半導體製程所完成,其中晶片上的各種電路佈局需以數道微影製程加以定義形成。在微影製程中,曝光步驟是由曝光裝置所實施,其可將光罩上的電路佈局圖轉移至晶圓上,其中曝光製程的良率高低直接影響晶片的製造成本,其中曝光裝置對曝光良率又有最直接的影響。在曝光製程中,光罩若發生任何微小的偏離都會干擾並影響到曝光結果,倘若電路佈局圖轉移至晶圓時失真,則會影像電路特性甚至產生缺陷,成為不良品導致良率降低。因外,在曝光裝置運作時,如何減少光罩的位置發生偏離以改善良率是本領域技術人員亟待解決的一個技術問題。 Generally, a semiconductor device must be completed by a complicated semiconductor process. Among them, various circuit layouts on a wafer need to be defined by several lithography processes. In the lithography process, the exposure step is performed by an exposure device, which can transfer the circuit layout on the photomask to the wafer. The yield of the exposure process directly affects the manufacturing cost of the wafer. The exposure device Yield has the most direct impact. During the exposure process, any slight deviation of the photomask will interfere and affect the exposure result. If the circuit layout is distorted when transferred to the wafer, the image circuit characteristics will even be defective, which will result in a defective product and reduce the yield. In addition, during the operation of the exposure device, how to reduce the deviation of the position of the photomask to improve the yield is a technical problem urgently solved by those skilled in the art.

本發明提供了一種光罩及光罩承載平台的維護方法,用於檢測光罩承載平台上之固定元件的效能。 The invention provides a photomask and a method for maintaining a photomask carrying platform, which are used to detect the effectiveness of the fixed components on the photomask carrying platform.

本發明之實施例提供一種光罩,其可置放於曝光裝置中的光罩承載 平台上,此光罩包括一基板以及一反射結構。基板包括一主表面與至少一側壁,主表面與側壁相接,其中主表面包括一圖案區以及一周邊區,周邊區設置於圖案區的一外側。反射結構設置於側壁表面或設置於主表面之周邊區。 An embodiment of the present invention provides a photomask that can be placed in a photomask carried in an exposure device. On the platform, the photomask includes a substrate and a reflective structure. The substrate includes a main surface and at least one side wall, and the main surface is in contact with the side wall. The main surface includes a pattern region and a peripheral region. The peripheral region is disposed on an outer side of the pattern region. The reflective structure is disposed on a side wall surface or a peripheral area of the main surface.

本發明之實施例另提供一種光罩承載平台的維護方法,其包括提供一光罩,置放於曝光裝置中的光罩承載平台上,並以光罩承載平台上的一固定元件將光罩固定於光罩承載平台上,其中光罩承載平台為可移動式平台,而光罩包括一基板以及一反射結構。基板包括一主表面與至少一側壁,主表面與側壁相接,其中主表面包括一圖案區以及一周邊區,周邊區設置於圖案區的一外側。反射結構至少設置於側壁表面或設置於主表面之周邊區。進行一第一檢測步驟,移動光罩承載平台,並透過一雷射光束照射反射結構以測量光罩的一位置資訊。進行一確認步驟,由位置資訊判定光罩在光罩承載平台上是否發生位移,當光罩發生位移時,則判定固定元件之效能不合格,以及當光罩未發生位移時,則判定固定元件之效能合格。 An embodiment of the present invention further provides a method for maintaining a photomask carrying platform, which includes providing a photomask, which is placed on the photomask carrying platform in an exposure device, and the photomask is fixed by a fixing element on the photomask carrying platform. The photomask is fixed on a photomask carrying platform, wherein the photomask carrying platform is a movable platform, and the photomask includes a substrate and a reflective structure. The substrate includes a main surface and at least one side wall, and the main surface is in contact with the side wall. The main surface includes a pattern region and a peripheral region. The peripheral region is disposed on an outer side of the pattern region. The reflective structure is disposed on at least the side wall surface or the peripheral area of the main surface. A first detection step is performed, the photomask carrying platform is moved, and a reflective beam is illuminated by a laser beam to measure a position information of the photomask. A confirmation step is performed to determine whether the photomask is displaced on the photomask bearing platform from the position information. When the photomask is displaced, the performance of the fixed element is judged to be unacceptable, and when the photomask is not displaced, the fixed element is determined. The performance is qualified.

10‧‧‧曝光裝置 10‧‧‧Exposure device

100‧‧‧光源 100‧‧‧ light source

102‧‧‧光罩承載平台 102‧‧‧Photomask carrying platform

104‧‧‧透鏡系統 104‧‧‧ lens system

106‧‧‧晶圓承載平台 106‧‧‧Wafer Carrying Platform

108‧‧‧固定元件 108‧‧‧Fixed components

110、1101、1102‧‧‧干涉計 110, 1101, 1102‧‧‧ interferometer

112‧‧‧基板 112‧‧‧ substrate

114‧‧‧主表面 114‧‧‧ main surface

116、1161、1162‧‧‧側壁 116, 1161, 1162 ‧‧‧ side walls

118、1181、1182‧‧‧反射結構 118, 1181, 1182‧‧‧ Reflective Structure

120‧‧‧對位記號 120‧‧‧Counting mark

IL‧‧‧照明光 IL‧‧‧illumination light

L1、L2‧‧‧雷射光束 L1, L2‧‧‧ laser beam

R‧‧‧光罩 R‧‧‧Photomask

R1‧‧‧圖案區 R1‧‧‧Pattern area

R2‧‧‧周邊區 R2‧‧‧Peripheral area

R21‧‧‧邊緣部 R21‧‧‧Edge

R22‧‧‧內緣部 R22‧‧‧Inner edge

S100~S114、S102’~S106’、S200~S210‧‧‧步驟 S100 ~ S114, S102 ’~ S106’, S200 ~ S210‧‧‧ steps

V‧‧‧垂直投影方向 V‧‧‧ vertical projection direction

W‧‧‧晶圓 W‧‧‧ Wafer

X‧‧‧第一方向 X‧‧‧ first direction

Y‧‧‧第二方向 Y‧‧‧ second direction

第1圖為本發明第一實施例之曝光裝置的示意圖。 FIG. 1 is a schematic diagram of an exposure apparatus according to a first embodiment of the present invention.

第2圖為本發明第一實施例之光罩的示意圖。 FIG. 2 is a schematic diagram of a photomask according to the first embodiment of the present invention.

第3圖為本發明第一實施例之光罩承載平台的維護方法的步驟流程圖。 FIG. 3 is a flowchart of steps in a method for maintaining a mask carrying platform according to the first embodiment of the present invention.

第4圖為本發明第一實施例之變化實施例之光罩承載平台的維護方法的步驟流程圖。 FIG. 4 is a flowchart of steps in a method for maintaining a mask carrying platform according to a modified embodiment of the first embodiment of the present invention.

第5圖為本發明第二實施例之光罩的示意圖。 FIG. 5 is a schematic diagram of a photomask according to a second embodiment of the present invention.

第6圖為本發明第三實施例之光罩的示意圖。 FIG. 6 is a schematic diagram of a photomask according to a third embodiment of the present invention.

第7圖為本發明第四實施例之光罩的示意圖。 FIG. 7 is a schematic diagram of a photomask according to a fourth embodiment of the present invention.

第8圖為本發明第五實施例之光罩的示意圖。 FIG. 8 is a schematic diagram of a photomask according to a fifth embodiment of the present invention.

為使熟習本發明所屬技術領域之一般技藝者能更進一步瞭解本發明,下文特列舉本發明之較佳實施例,並配合所附圖式,詳細說明本發明的影像感測器及其製作方法及所欲達成的功效。為了方便表示而能夠輕易了解,圖式並未以成品之實際尺寸或比例繪示,因此圖式中元件之尺寸或比例僅用以示意而並非欲以限制本發明的範圍。 In order to make a person skilled in the art who is familiar with the technical field of the present invention further understand the present invention, the preferred embodiments of the present invention are enumerated below, and in conjunction with the accompanying drawings, the image sensor of the present invention and the manufacturing method thereof will be described in detail. And the desired effect. For ease of representation and easy understanding, the drawings are not drawn with the actual size or ratio of the finished product, so the sizes or ratios of the components in the drawings are for illustration only and are not intended to limit the scope of the invention.

請參考第1圖與第2圖,第1圖為本發明第一實施例之曝光裝置的示意圖,而第2圖為本發明第一實施例之光罩的示意圖。為了方便表示並能突顯本發明的重點,第1圖僅繪出曝光裝置中的主要元件,第2圖僅繪出光罩及與其對應之干涉計,而省略曝光裝置中的其他元件。如第1圖所示,本實施例的一曝光裝置10可例如是步進式曝光裝置或掃描式曝光裝置,但不以此為限。曝光裝置10包括光源100、光罩承載平台102、透鏡系統104與晶圓承載平台106。光罩承載平台102設置於光源100與透鏡系統104之間,而透鏡系統104設置於光罩承載平台102與晶圓承載平台106之間。光源100能夠發出一照明光IL作為曝光光源,其中照明光IL可例如是G-線(G-line)、I-線(I-line)、KrF準分非子雷射光(波長248nm)、ArF準分子雷射光(波長193nm)、F2雷射光(波長157nm)等。光罩承載平台102可用以置放本發明的一光罩R,其中光罩R可具有或不具有圖案(例如電路佈局圖等)。光罩承載平台102上可設置有複數個固定元件108,用於將光罩R固定於光罩承載平台102上。本實施例的固定元件108包括真空吸引墊(vacuum pad),但不以此為限。除吸引式固定元件外,固定元件108亦可包括接觸式固定 元件或機械式固定元件等,但不以此為限。光罩承載平台102具有一中空部分(圖未繪出),當光罩R置放在光罩承載平台102上時,光罩承載平台102的中空部分可暴露出光罩R的圖案,使得光線可以通過。晶圓承載平台106可用以置放一晶圓W,且晶圓承載平台106亦可具有固定元件(圖未繪出)用於固定晶圓W的位置。晶圓承載平台106上的固定元件可包括接觸式固定元件、機械式固定元件或吸引式固定元件等。此外,光罩承載平台102與晶圓承載平台106可各自與一移動元件(圖未繪出)連接,並可藉由移動元件分別移動光罩承載平台102與晶圓承載平台106。換言之,本實施例的光罩承載平台102與晶圓承載平台106可為可移動式平台,其中移動元件可例如為線性馬達,但不以此為限。透鏡系統104包括由一或多個透鏡所組成的透鏡組,並可依實際曝光製程的需求選擇透鏡系統104內的透鏡組合。在本實施例中,照明光IL先通過光罩R形成一圖像,且此圖像對應光罩R所具有的圖案。接著,此圖像(或照明光IL)進入透鏡系統104,並透過透鏡系統104成像在晶圓W的表面。舉例而言,透過照明光IL與透鏡系統104,可將光罩R上的圖案轉移至晶圓W上的感光層(例如光阻)。 Please refer to FIG. 1 and FIG. 2. FIG. 1 is a schematic diagram of an exposure apparatus according to a first embodiment of the present invention, and FIG. 2 is a schematic diagram of a photomask according to the first embodiment of the present invention. In order to facilitate the presentation and highlight the main points of the present invention, FIG. 1 only depicts the main elements in the exposure device, and FIG. 2 only depicts the photomask and the corresponding interferometer, and other elements in the exposure device are omitted. As shown in FIG. 1, an exposure apparatus 10 in this embodiment may be, for example, a step exposure apparatus or a scanning exposure apparatus, but is not limited thereto. The exposure apparatus 10 includes a light source 100, a mask carrying platform 102, a lens system 104 and a wafer carrying platform 106. The mask carrier platform 102 is disposed between the light source 100 and the lens system 104, and the lens system 104 is disposed between the mask carrier platform 102 and the wafer carrier platform 106. The light source 100 can emit an illumination light IL as an exposure light source, where the illumination light IL may be, for example, G-line, I-line, KrF quasi-fractional laser light (wavelength 248 nm), ArF Excimer laser light (wavelength 193nm), F2 laser light (wavelength 157nm), etc. The photomask carrying platform 102 can be used to place a photomask R of the present invention, wherein the photomask R may or may not have a pattern (such as a circuit layout diagram). The photomask carrying platform 102 may be provided with a plurality of fixing elements 108 for fixing the photomask R on the photomask carrying platform 102. The fixing element 108 of this embodiment includes a vacuum suction pad, but is not limited thereto. In addition to the attractive fixing element, the fixing element 108 may also include a contact type fixing Components or mechanical fixed components, but not limited to this. The photomask carrying platform 102 has a hollow portion (not shown). When the photomask R is placed on the photomask carrying platform 102, the hollow portion of the photomask carrying platform 102 can expose the pattern of the photomask R, so that light can be by. The wafer carrying platform 106 can be used to place a wafer W, and the wafer carrying platform 106 can also have a fixing element (not shown) for fixing the position of the wafer W. The fixing elements on the wafer carrying platform 106 may include a contact type fixing element, a mechanical type fixing element, or a suction type fixing element. In addition, the mask carrying platform 102 and the wafer carrying platform 106 can be connected to a moving element (not shown), and the photomask carrying platform 102 and the wafer carrying platform 106 can be moved by the moving elements, respectively. In other words, the photomask carrying platform 102 and the wafer carrying platform 106 in this embodiment may be movable platforms, and the moving elements may be linear motors, but not limited thereto. The lens system 104 includes a lens group composed of one or more lenses, and a lens combination in the lens system 104 can be selected according to the requirements of an actual exposure process. In this embodiment, the illumination light IL first forms an image through the mask R, and this image corresponds to the pattern of the mask R. This image (or illumination light IL) then enters the lens system 104 and is imaged on the surface of the wafer W through the lens system 104. For example, through the illumination light IL and the lens system 104, the pattern on the photomask R can be transferred to a photosensitive layer (such as a photoresist) on the wafer W.

以下將詳細說明有關本實施例之光罩R及如何測量光罩R之位置的相關技術特徵。如第2圖所示,光罩R包括一基板112,其包括一主表面114與至少一側壁116,且主表面114與側壁116相接。詳細而言,若以第1圖之照明光IL的行進方向(或光軸)視為一垂直投影方向V,則本實施例光罩R的主表面114與垂直投影方向V互相垂直,但不以此為限。基板112的主表面114包括一圖案區R1與一周邊區R2,其中圖案區R1可具有圖案(例如電路佈局圖等)。周邊區R2設置於圖案區R1的一外側,在本實施例中,周邊區R2環繞圖案區R1。需注意的是,本實施例基板112的主表面114雖然係指第2圖所繪示光罩R的上表面,但依據觀察方向、設置方式的不同或是各光罩的不同設計,在其他實施例中,主表面114 亦可代表光罩R的下表面,換言之,本實施例所指的主表面114並不限定為一定是光罩R的上表面或下表面。另一方面,基板112包括四個側壁116,其中兩個互相平行的側壁1161垂直於一第一方向X,而另兩個互相平行的側壁1162垂直於一第二方向Y,且第一方向X與第二方向Y皆垂直於垂直投影方向V。此外,本實施例的光罩R另包括反射結構118設置於側壁116的部分表面。詳細而言,本實施例的光罩R包括四個反射結構118,其中兩個反射結構1181設置於一個側壁1161上,而另兩個反射結構1182設置於一個側壁1162上。換言之,反射結構1181亦垂直於第一方向X,而反射結構1182亦垂直於第二方向Y。如第2圖所示,本實施例之各反射結構118分別佔據其所對應之側壁116的一部分,且彼此分離並不重疊。本實施例之反射結構118包括條狀反射鏡(bar mirror),且其形狀為矩形,但不限於此,可依需求選擇適當的形狀。此外,基板112的材料可包括石英,而反射結構118的材料可包括具反射性的材料,例如金屬材料等,但不以此為限。舉例而言,可對基板112之側壁116予以加工形成反射結構118。在一實施例中,可透過鍍膜製程將具反射性的材料(如金屬)形成於側壁116的適當位置上來形成反射結構118。在另一實施例中,可將反射鏡成品(如條狀反射鏡)黏貼在側壁116的適當位置上來形成反射結構118。然而,本實施例之基板112與反射結構118的材料以及反射結構118的加工方式並不以上述為限。此外,本實施例具有反射結構118的光罩R,其重量與習知運用於曝光裝置的光罩的重量大致相同。另補充說明的是,在其他實施例中,光罩R亦可僅作為測試用光罩,圖案區R1可不具有圖案(如電路佈局圖等)。 The related technical features of the mask R and how to measure the position of the mask R in this embodiment will be described in detail below. As shown in FIG. 2, the photomask R includes a substrate 112 including a main surface 114 and at least one side wall 116, and the main surface 114 is connected to the side wall 116. In detail, if the traveling direction (or optical axis) of the illumination light IL in FIG. 1 is regarded as a vertical projection direction V, the main surface 114 and the vertical projection direction V of the mask R in this embodiment are perpendicular to each other, but not This is the limit. The main surface 114 of the substrate 112 includes a pattern region R1 and a peripheral region R2. The pattern region R1 may have a pattern (such as a circuit layout diagram). The peripheral region R2 is disposed on an outer side of the pattern region R1. In this embodiment, the peripheral region R2 surrounds the pattern region R1. It should be noted that although the main surface 114 of the substrate 112 in this embodiment refers to the upper surface of the photomask R shown in FIG. 2, it depends on the viewing direction, the setting method, or the design of each photomask. In the embodiment, the main surface 114 It may also represent the lower surface of the mask R. In other words, the main surface 114 referred to in this embodiment is not limited to the upper surface or the lower surface of the mask R. On the other hand, the substrate 112 includes four side walls 116, of which two side walls 1161 parallel to each other are perpendicular to a first direction X, and two side walls 1162 parallel to each other are perpendicular to a second direction Y, and the first direction X Both are perpendicular to the second direction Y and perpendicular to the vertical projection direction V. In addition, the photomask R in this embodiment further includes a reflective structure 118 disposed on a part of the surface of the sidewall 116. In detail, the photomask R of this embodiment includes four reflective structures 118, of which two reflective structures 1181 are disposed on one side wall 1161, and two other reflective structures 1182 are disposed on one side wall 1162. In other words, the reflective structure 1181 is also perpendicular to the first direction X, and the reflective structure 1182 is also perpendicular to the second direction Y. As shown in FIG. 2, each reflective structure 118 in this embodiment occupies a part of its corresponding side wall 116, and is separated from each other and does not overlap. The reflective structure 118 of this embodiment includes a bar mirror, and its shape is rectangular, but it is not limited thereto, and an appropriate shape can be selected according to requirements. In addition, the material of the substrate 112 may include quartz, and the material of the reflective structure 118 may include a reflective material, such as a metal material, but is not limited thereto. For example, the sidewall 116 of the substrate 112 may be processed to form a reflective structure 118. In one embodiment, the reflective structure 118 can be formed by forming a reflective material (such as metal) on a proper position of the sidewall 116 through a coating process. In another embodiment, a reflective mirror product (such as a strip-shaped mirror) can be adhered to an appropriate position of the side wall 116 to form the reflective structure 118. However, the materials of the substrate 112 and the reflective structure 118 and the processing method of the reflective structure 118 in this embodiment are not limited to the above. In addition, the weight of the photomask R having the reflective structure 118 in this embodiment is substantially the same as that of a photomask conventionally used in an exposure device. It is additionally noted that, in other embodiments, the photomask R may only be used as a photomask for testing, and the pattern region R1 may not have a pattern (such as a circuit layout diagram).

如第1圖與第2圖所示,在本實施例中,曝光裝置10另包括至少一干涉計110,其可測量光罩R的位置資訊。詳細而言,如第2圖所示,其中各反射結構118對應一干涉計110,干涉計110可依據發射至反射結構118的一雷射光束L1 與經反射結構118反射的一雷射光束L2來測量光罩R的位置資訊。在本實施例中,兩個干涉計1101在第一方向X上分別對應反射結構1181設置,而另兩個干涉計1102在第二方向Y上分別對應反射結構1182設置。藉此,不管光罩R在移動中或停止不動時,皆可透過干涉計1101與干涉計1102隨時測量光罩R在第一方向X與第二方向Y上的位置資訊,以測得光罩R在光罩承載平台102上是否發生沿著第一方向X與第二方向Y的位移。 As shown in FIG. 1 and FIG. 2, in this embodiment, the exposure device 10 further includes at least one interferometer 110 that can measure the position information of the photomask R. In detail, as shown in FIG. 2, each of the reflection structures 118 corresponds to an interferometer 110, and the interferometer 110 may be based on a laser beam L1 emitted to the reflection structure 118. And a laser beam L2 reflected by the reflection structure 118 to measure the position information of the mask R. In this embodiment, two interferometers 1101 are respectively disposed in the first direction X corresponding to the reflective structure 1181, and the other two interferometers 1102 are respectively disposed in the second direction Y corresponding to the reflective structure 1182. Therefore, regardless of whether the mask R is moving or stopped, the position information of the mask R in the first direction X and the second direction Y can be measured at any time through the interferometer 1101 and the interferometer 1102 to measure the mask. Whether R is displaced along the first direction X and the second direction Y on the mask carrying platform 102.

值得一提的是,反射結構118的配置並不以本實施例為限。舉例而言,假如光罩R的移動只涉及第一方向X上的移動,則可只在側壁1161設置反射結構1181以透過干涉計1101測量位置資訊。假如光罩R的移動同時涉及第一方向X與第二方向Y上的移動,則可在側壁1161與側壁1162設置反射結構1181與反射結構1182以透過干涉計1101與干涉計1102測量位置資訊。根據上述的原則,在一實施例中,側壁1161上可只設有一個反射結構1181,而側壁1162上可只設有一個反射結構1182。在另一實施例中,四個側壁116中可只有其中一個側壁116設有一個反射結構118。另外,上述反射結構118的數量可依實際需求而有所不同,反射結構118的數量可例如依據干涉計110或雷射光束L1的數量而改變,且與反射結構118所對應之干涉計110的數量也可依實際需要而變化,例如一干涉計110同時對應數個反射結構118。在某些實施例中,干涉計110亦可用於測量光罩承載平台102的位置。在此情況下,光罩承載平台102亦須設置反射結構,並可藉由設置一或多個分光鏡將雷射光束分別導引至光罩R與光罩承載平台102,以分別測量測量光罩R與光罩承載平台102的位置資訊。 It is worth mentioning that the configuration of the reflective structure 118 is not limited to this embodiment. For example, if the movement of the mask R only involves the movement in the first direction X, a reflection structure 1181 may be provided only on the side wall 1161 to measure the position information through the interferometer 1101. If the movement of the mask R involves the movement in the first direction X and the second direction Y at the same time, a reflection structure 1181 and a reflection structure 1182 may be provided on the side walls 1161 and 1162 to measure the position information through the interferometer 1101 and the interferometer 1102. According to the above principles, in one embodiment, only one reflective structure 1181 may be provided on the side wall 1161, and only one reflective structure 1182 may be provided on the side wall 1162. In another embodiment, only one of the four sidewalls 116 may be provided with a reflective structure 118. In addition, the number of the reflective structures 118 may vary according to actual needs. The number of the reflective structures 118 may be changed, for example, according to the number of the interferometer 110 or the laser beam L1. The number can also be changed according to actual needs. For example, an interferometer 110 corresponds to several reflective structures 118 at the same time. In some embodiments, the interferometer 110 can also be used to measure the position of the mask carrying platform 102. In this case, the photomask carrying platform 102 must also be provided with a reflective structure, and the laser beam can be directed to the photomask R and the photomask carrying platform 102 by setting one or more beam splitters to measure the measurement light separately. Position information of the mask R and the mask carrying platform 102.

如第2圖所示,在本實施例中,光罩R可另包括複數個對位記號120設置於主表面114(如上表面)的周邊區R2。由於本實施例之光罩R的材料為石 英,使得光罩R為透明的,因此可將光罩R的對位記號120與晶圓承載平台106上的對位記號進行對準,藉此能夠對晶圓W上的適當位置進行曝光。本實施例的對位記號120是靠近圖案區R1沿第一方向X排列設置於主表面114上,但不以此為限。 As shown in FIG. 2, in this embodiment, the photomask R may further include a plurality of alignment marks 120 disposed on the peripheral surface R2 of the main surface 114 (such as the upper surface). Since the material of the mask R in this embodiment is stone In order to make the photomask R transparent, the alignment mark 120 of the photomask R and the alignment mark on the wafer carrying platform 106 can be aligned, so that the appropriate position on the wafer W can be exposed. The alignment marks 120 in this embodiment are arranged on the main surface 114 along the first direction X near the pattern region R1, but not limited thereto.

請參考第3圖並一併參考第1圖與第2圖,其中第3圖為本發明第一實施例之光罩承載平台的維護方法的步驟流程圖。如第3圖所示,在本實施例之光罩承載平台102的維護方法中,首先在一批產品的曝光製程結束後(步驟S100),進行步驟S102以提供上述的光罩R,將其置放於曝光裝置10的光罩承載平台102上,並以光罩承載平台102上的固定元件108將光罩R固定於光罩承載平台102上,其中本實施例的固定元件108為真空吸引墊,且光罩承載平台102為可移動式平台。接著,進行步驟S104,進行一第一檢測步驟,移動光罩承載平台102,並透過雷射光束L1照射反射結構118以測量光罩R的位置資訊。舉例而言,如第2圖所示,本實施例透過干涉計1101與干涉計1102各自分析雷射光束L1與雷射光束L2以得到光罩R之二維的位置資訊。如上文所述,在其他實施例中,第一檢測步驟亦可只透過干涉計110測量第一方向X上或第二方向Y上之一維的位置資訊,不再贅述。 Please refer to FIG. 3 and refer to FIG. 1 and FIG. 2 together, where FIG. 3 is a flowchart of steps of a method for maintaining a photomask bearing platform according to the first embodiment of the present invention. As shown in FIG. 3, in the method for maintaining the mask carrying platform 102 of this embodiment, after the exposure process of a batch of products is completed (step S100), step S102 is performed to provide the above-mentioned photomask R, and then Placed on the reticle carrying platform 102 of the exposure device 10, and fixing the photomask R on the reticle carrying platform 102 with the fixing element 108 on the reticle carrying platform 102, where the fixing element 108 of this embodiment is a vacuum suction The photomask carrying platform 102 is a movable platform. Next, step S104 is performed, a first detection step is performed, the photomask carrying platform 102 is moved, and the reflective structure 118 is illuminated by the laser beam L1 to measure the position information of the photomask R. For example, as shown in FIG. 2, in this embodiment, the interferometer 1101 and the interferometer 1102 respectively analyze the laser beam L1 and the laser beam L2 to obtain two-dimensional position information of the mask R. As described above, in other embodiments, the first detection step may also measure the position information in one dimension in the first direction X or the second direction Y only through the interferometer 110, and will not be described again.

接著,進行步驟S106,進行一確認步驟,由所得到的位置資訊判定光罩R在光罩承載平台102上是否發生位移,當光罩R發生位移時,則判定固定元件108之效能不合格,而當光罩R未發生位移時,則判定固定元件108之效能合格。詳細而言,確認步驟例如包括監控光罩R在移動過程中透過干涉計1101與干涉計1102所得到的位置資訊。當干涉計1101與干涉計1102所得到的位置資訊出現異常變化(例如訊號跳動)時,即判定光罩R發生位移。反之,當干涉計1101與干 涉計1102所得到的位置資訊並未出現異常變化(例如訊號維持穩定)時,即判定光罩R並未發生位移。此外,第一檢測步驟與確認步驟可同步進行,例如在光罩承載平台102帶動光罩R移動時,干涉計1101與干涉計1102測量光罩R的位置資訊並隨時監控位置資訊是否出現異常變化,但不以此為限。在本實施例中,由於固定元件108為真空吸引墊,因此倘若真空吸引墊不夠乾淨時,真空吸引墊上的粒子(如灰塵等)會破壞真空狀態而減弱真空吸引墊的吸力,影響固定元件108固定光罩R的效能,使得光罩R在光罩承載平台102上發生位移,進而造成干涉計所偵測到的訊號發生變動,因此在確認步驟中會有不合格之結果。換言之,倘若真空吸引墊為乾淨時,真空吸引墊能夠維持真空狀態而提供足夠的吸力,此時固定元件108之效能即可視為合格,並可有效地能夠在光罩承載平台102移動時固定光罩R。 Next, step S106 is performed, and a confirmation step is performed to determine whether the photomask R is displaced on the photomask bearing platform 102 from the obtained position information. When the photomask R is displaced, it is determined that the performance of the fixing element 108 is unsatisfactory. When the mask R is not displaced, it is determined that the performance of the fixing element 108 is acceptable. In detail, the confirmation step includes, for example, monitoring the position information obtained through the interferometer 1101 and the interferometer 1102 during the movement of the photomask R. When the position information obtained by the interferometer 1101 and the interferometer 1102 changes abnormally (for example, the signal jumps), it is determined that the mask R is displaced. Conversely, when the interferometer 1101 and the dry When there is no abnormal change in the position information obtained by the counter 1102 (for example, the signal remains stable), it is determined that the mask R has not been displaced. In addition, the first detection step and the confirmation step can be performed simultaneously. For example, when the photomask carrying platform 102 drives the photomask R to move, the interferometer 1101 and the interferometer 1102 measure the position information of the photomask R and monitor the position information for abnormal changes at any time. , But not limited to this. In this embodiment, since the fixing element 108 is a vacuum suction pad, if the vacuum suction pad is not clean enough, particles (such as dust and the like) on the vacuum suction pad will destroy the vacuum state and weaken the suction force of the vacuum suction pad, affecting the fixed element 108 The efficiency of the fixed photomask R causes the photomask R to be displaced on the photomask carrying platform 102, thereby causing a change in the signal detected by the interferometer, so there will be unqualified results in the confirmation step. In other words, if the vacuum suction pad is clean, the vacuum suction pad can maintain a vacuum state and provide sufficient suction power. At this time, the performance of the fixed element 108 can be regarded as qualified, and it can effectively fix the light when the photomask carrying platform 102 moves. Hood R.

此外,當確認步驟的結果呈現光罩R未發生位移或判定固定元件108之效能合格時,則可認定固定元件108的清潔度合格。此時可進行步驟S108,進行下一批產品的曝光製程,例如提供一產品光罩以替換原光罩承載平台102上之光罩R,並以產品光罩進行曝光。另一方面,當確認步驟的結果呈現光罩R發生位移或判定固定元件108之效能不合格時,則可認定固定元件108的清潔度不合格。此時可進行步驟S110,對固定元件108進行清潔。在清潔之後可進行步驟S102’(提供光罩R)、步驟S104’(進行第一檢測步驟)與步驟S106’(進行確認步驟),其中步驟S102’至步驟S106’的內容可與步驟S102至步驟S106相同,在此不再贅述。接著,當步驟S106’的確認結果仍呈現光罩R發生位移或判定固定元件108之效能不合格時,再重複進行上述步驟S102’至步驟S106’直到確認步驟的結果呈現光罩R未發生位移或判定固定元件108之效能合格。 In addition, when the result of the confirmation step shows that the mask R is not displaced or the effectiveness of the fixed element 108 is determined to be qualified, the cleanliness of the fixed element 108 may be determined to be qualified. At this time, step S108 may be performed to perform an exposure process for the next batch of products. For example, a product mask is provided to replace the mask R on the original mask carrying platform 102, and the product mask is used for exposure. On the other hand, when the result of the confirmation step shows that the photomask R is displaced or the effectiveness of the fixing element 108 is judged to be unsatisfactory, the cleanliness of the fixing element 108 may be deemed to be unsatisfactory. At this time, step S110 may be performed to clean the fixing element 108. After cleaning, step S102 '(provide photomask R), step S104' (perform first detection step), and step S106 '(perform confirmation step), and the contents of steps S102' to S106 'can be the same as steps S102 to Step S106 is the same, and is not repeated here. Then, when the confirmation result of step S106 'still shows that the mask R is displaced or the effectiveness of the fixed element 108 is judged to be unqualified, the above steps S102' to S106 'are repeated until the result of the confirmation step shows that the mask R is not displaced Or it is judged that the performance of the fixing element 108 is qualified.

另一方面,當步驟S106’的確認結果呈現光罩R未發生位移或判定固定元件108之效能合格時,則可認定固定元件108的清潔度合格。此時可接續進行步驟S112,提供一預修保養(preventive maintenance,PM)光罩以替換原光罩承載平台102上之光罩R,並利用預修保養光罩進行一第二檢測步驟。接著進行確認步驟S114,以確認經曝光裝置10在晶圓W上所形成的曝光圖案是否發生變形(distortion)等失真的情形。若曝光圖案確認並未發生變形,則進行上述的步驟S108,以進行下一批產品的曝光製程。若曝光圖案確認發生變形,則再回到步驟S110對固定元件108進行清潔,並續行上述步驟S110後的步驟。 On the other hand, when the confirmation result of step S106 'shows that the mask R is not displaced or the effectiveness of the fixed element 108 is determined to be acceptable, the cleanliness of the fixed element 108 may be determined to be acceptable. At this time, step S112 can be continued, a preventive maintenance (PM) mask is provided to replace the mask R on the original mask carrying platform 102, and a second inspection step is performed by using the pre-maintenance mask. Next, a confirmation step S114 is performed to confirm whether the exposure pattern formed on the wafer W by the exposure device 10 is distorted or distorted. If it is confirmed that the exposure pattern is not deformed, step S108 is performed to perform the exposure process for the next batch of products. If the exposure pattern is confirmed to be deformed, return to step S110 to clean the fixing element 108, and continue the steps after step S110.

在曝光製程中,假如光罩承載平台上的固定元件(真空吸引墊)不夠乾淨而有粒子(如灰塵等)存在時,光罩在光罩承載平台移動過程中很容易發生位移。儘管光罩只發生些微位移,亦可能使得在晶圓上所曝出的圖案變形或失真,並導致良率下降。由於習知的曝光裝置未有偵測固定元件清潔度的功能,因此只能在得知曝光結果失敗後才對光罩承載平台上的固定元件進行清潔,而造成資源浪費與製造成本增加。另外,每當曝光裝置進行清潔後需以預修保養光罩進行檢測,倘若固定元件並未清潔乾淨而使得曝光圖案再次變形或失真,則又需進行清潔並再以預修保養光罩進行檢測。由於將曝光裝置停機進行清潔並重新啟動以預修保養光罩進行檢測往往需花費一至數小時,假使無法有效確定光罩承載平台上固定元件的清潔度而需重複進行以上流程,將浪費許多製程時間並使得成本提高。根據本發明,透過本實施例的光罩R及利用光罩R所進行的光罩承載平台102的維護方法,可有效地確認光罩承載平台102上的固定元件108的效能或固定元件108是否乾淨。此外,利用干涉計110測量光罩R在光罩承載平台102的移動過程中是否發生位移所花費的時間只需約兩分鐘至三分鐘。藉此,透過本實施例的光罩R及利用光罩R所進行光罩承載平台102的維護方法,可有效減 少重複使用預修保養光罩進行檢測的次數,以有效節省時間並降低成本。因此,本實施例之光罩承載平台102的維護方法可於每批產品將進行曝光製程之前或是在曝光裝置10週期性之保養流程中進行。 In the exposure process, if the fixed components (vacuum suction pads) on the photomask carrying platform are not clean enough and particles (such as dust) are present, the photomask is easily displaced during the movement of the photomask carrying platform. Although the mask is only slightly displaced, the pattern exposed on the wafer may be deformed or distorted, and the yield may be reduced. Since the conventional exposure device does not have the function of detecting the cleanliness of the fixed component, the fixed component on the photomask bearing platform can only be cleaned after the failure of the exposure result is learned, resulting in waste of resources and increased manufacturing costs. In addition, every time the exposure device is cleaned, it needs to be inspected with a pre-maintenance mask. If the fixed element is not cleaned and the exposure pattern is deformed or distorted again, it needs to be cleaned and inspected again with a pre-maintenance mask . Because the exposure device is stopped for cleaning and restarted to pre-maintain the photomask for inspection, it usually takes one to several hours. If the cleanliness of the fixed components on the photomask bearing platform cannot be determined effectively, the above process needs to be repeated, which will waste many processes. Time and cost. According to the present invention, through the photomask R of this embodiment and the method for maintaining the photomask carrying platform 102 using the photomask R, it is possible to effectively confirm the performance of the fixed element 108 on the photomask carrying platform 102 or whether the fixed element 108 is clean. In addition, it takes only about two to three minutes for the interferometer 110 to measure whether the photomask R is displaced during the movement of the photomask carrying platform 102. Thereby, through the photomask R of this embodiment and the method for maintaining the photomask carrying platform 102 using the photomask R, it is possible to effectively reduce Reduce the number of inspections with the pre-maintenance mask to save time and reduce costs. Therefore, the maintenance method of the mask carrying platform 102 in this embodiment can be performed before each batch of products is subjected to the exposure process or during the periodic maintenance process of the exposure device 10.

本發明之光罩及光罩承載平台的維護方法並不以上述實施例為限。下文將繼續揭示本發明之其它實施例及變化實施例,然為了簡化說明並突顯各實施例之間的差異,下文中使用相同標號標注相同元件,並不再對重覆部分作贅述。 The maintenance method of the photomask and the photomask carrying platform of the present invention is not limited to the above embodiments. The following will continue to disclose other embodiments and variations of the present invention, but in order to simplify the description and highlight the differences between the embodiments, the same elements are labeled with the same reference numerals in the following, and the repeated parts will not be repeated.

請參考第4圖,第4圖為本發明第一實施例之變化實施例之光罩承載平台的維護方法的步驟流程圖。如第4圖所示,在本變化實施例中,當利用曝光裝置10進行曝光製程並發現曝光失敗時(步驟S200),可進行本發明光罩承載平台102的維護方法。以上步驟S200中發現曝光失敗的情況例如包括在製作產品的過程中,曝光製程的曝光結果不理想(例如在晶圓W上所曝出的圖案變形或失真),或是在曝光裝置10進行週期性保養時以預修保養光罩進行曝光所形成的圖案發生變形或失真,但不限於此。在此情況下,維護方法則包括先進行步驟S202,先對光罩承載平台102上的固定元件108進行清潔,之後再進行步驟S204,提供本發明光罩R至光罩承載平台102上並進行第一檢測步驟S206以及確認步驟S208。以上步驟S204至步驟S208的內容與第一實施例之步驟S102至步驟S106相同或類似,在此不再贅述。此外,本變化實施例在確認步驟S208後的動作亦與第一實施例相同或類似。在確認步驟S208後,若判定固定元件108之效能不合格時,則進行步驟S202,對固定元件108重複進行清潔),以及在清潔之後進行第一檢測步驟S206與確認步驟S208。在確認步驟S208後,若判定固定元件108之效能為合格時,則進行步驟S210,提供預修保養光罩以替換光罩承載平台102上之光 罩R,並利用預修保養光罩進行第二檢測步驟,以測定經曝光裝置10所形成的曝光圖案是否發生變形。第二檢測步驟後的動作可參考第一實施例,在此不再贅述。 Please refer to FIG. 4, which is a flowchart of steps in a method for maintaining a mask carrying platform according to a modified embodiment of the first embodiment of the present invention. As shown in FIG. 4, in this modified embodiment, when the exposure process is performed using the exposure device 10 and an exposure failure is found (step S200), the method for maintaining the photomask bearing platform 102 of the present invention can be performed. The cases where the exposure failure is found in the above step S200 include, for example, that during the production of the product, the exposure result of the exposure process is not ideal (for example, the pattern exposed or deformed on the wafer W is deformed or distorted) or the cycle is performed in the exposure device 10 During the sexual maintenance, the pattern formed by the exposure through the pre-repair maintenance mask is deformed or distorted, but it is not limited thereto. In this case, the maintenance method includes first performing step S202, first cleaning the fixing element 108 on the photomask carrying platform 102, and then performing step S204, providing the photomask R of the present invention to the photomask carrying platform 102 and performing The first detection step S206 and the confirmation step S208. The content of the above steps S204 to S208 is the same as or similar to steps S102 to S106 of the first embodiment, and details are not described herein again. In addition, the operation of this modified embodiment after confirming step S208 is also the same as or similar to that of the first embodiment. After confirming step S208, if it is determined that the performance of the fixed element 108 is unsatisfactory, step S202 is performed, and the fixed element 108 is repeatedly cleaned), and after cleaning, the first detection step S206 and the confirmation step S208 are performed. After confirming step S208, if it is determined that the performance of the fixing element 108 is qualified, go to step S210 to provide a pre-repair maintenance mask to replace the light on the mask bearing platform 102 The mask R is subjected to a second detection step using a pre-maintenance mask to determine whether the exposure pattern formed by the exposure device 10 is deformed. For the actions after the second detection step, refer to the first embodiment, and details are not described herein again.

請參考第5圖,第5圖為本發明第二實施例之光罩的示意圖。如第5圖所示,本實施例與第一實施例不同的地方在於,反射結構118設置於主表面114之周邊區R2的部分表面。詳細而言,本實施例的周邊區R2包括一邊緣部R21與一內緣部R22,邊緣部R21與側壁116相接,且內緣部R22設置於圖案區R1與邊緣部R21之間,其中反射結構118設置於邊緣部R21之部分表面,而對位記號120設置於內緣部R22。在本實施例中,設有反射結構118的主表面114為基板112的上表面,而干涉計110設置於基板112的上方,並在垂直投影方向V上對應反射結構118。藉此,當光罩承載平台102與設置於其上的光罩R在垂直投影方向V上移動時,可利用干涉計110透過雷射光束L1、L2與所對應的反射結構118來測量光罩R在垂直投影方向V上的位置資訊,以進一步得知光罩R在垂直投影方向V上是否產生位移並依此判斷真空吸引墊是否乾淨。在某些實施例中,此設計另可例如搭配分光鏡將雷射光束L1、L2導引至側壁116的反射結構118,則亦可測量光罩R在第一方向X或第二方向Y上是否發生位移。反射結構118與干涉計110的數量與設計位置可依需求而有所不同,並可設置於基板112之不同側的邊緣部R21。在其他實施例中,設有反射結構118的主表面114亦可依需求為基板112的下表面,而干涉計110則對應設置於基板112的下方。在此情況下,由於光罩承載平台102之真空吸引墊吸引基板112的下表面,因此反射結構118所設置的位置應避開基板112下表面中對應真空吸引墊的位置。 Please refer to FIG. 5, which is a schematic diagram of a photomask according to a second embodiment of the present invention. As shown in FIG. 5, this embodiment is different from the first embodiment in that the reflective structure 118 is disposed on a part of the surface of the peripheral region R2 of the main surface 114. In detail, the peripheral region R2 of this embodiment includes an edge portion R21 and an inner edge portion R22, the edge portion R21 is connected to the side wall 116, and the inner edge portion R22 is disposed between the pattern region R1 and the edge portion R21, wherein The reflective structure 118 is disposed on a part of the surface of the edge portion R21, and the alignment mark 120 is disposed on the inner edge portion R22. In this embodiment, the main surface 114 provided with the reflective structure 118 is the upper surface of the substrate 112, and the interferometer 110 is disposed above the substrate 112 and corresponds to the reflective structure 118 in the vertical projection direction V. Thereby, when the mask carrying platform 102 and the mask R disposed thereon are moved in the vertical projection direction V, the interferometer 110 can be used to transmit the laser beams L1 and L2 and the corresponding reflection structure 118 to measure the mask. The position information of R in the vertical projection direction V, to further know whether the mask R is displaced in the vertical projection direction V and judge whether the vacuum suction pad is clean according to this. In some embodiments, this design can also be used, for example, with a beam splitter to guide the laser beams L1 and L2 to the reflective structure 118 of the side wall 116. Then, the mask R can also be measured in the first direction X or the second direction Y Whether displacement occurs. The number and design positions of the reflective structures 118 and the interferometer 110 may be different according to requirements, and may be disposed on the edge portions R21 on different sides of the substrate 112. In other embodiments, the main surface 114 provided with the reflective structure 118 may be the lower surface of the substrate 112 as required, and the interferometer 110 is correspondingly disposed below the substrate 112. In this case, since the vacuum suction pad of the photomask carrying platform 102 attracts the lower surface of the substrate 112, the position of the reflective structure 118 should be avoided from the position of the vacuum suction pad in the lower surface of the substrate 112.

請參考第6圖,第6圖為本發明第三實施例之光罩的示意圖。如第6圖 所示,本實施例與第一實施例不同的地方在於,反射結構118整面覆蓋一側壁116。在本實施例中,反射結構118設置於兩個垂直於第一方向X之側壁1161的其中一者並整面覆蓋此側壁1161,藉此可透過對應的干涉計110分析雷射光束L1、L2以測量光罩R在第一方向X上的位置資訊。此外,反射結構118亦可同時設置並整面覆蓋兩個側壁1161。在其他實施例中,若要測量光罩R在第二方向Y上的位置資訊時,可將反射結構118設置於垂直於第二方向Y之至少一側壁1162並整面覆蓋側壁1162。若要同時測量光罩R在第一方向X與第二方向Y上的位置資訊時,可將反射結構118設置於至少一側壁1161與至少一側壁1162上,並整面覆蓋側壁1161與側壁1162。根據本實施例,由於反射結構118整面覆蓋側壁1161或側壁1162,因此對於對應配合的干涉計110及雷射光束L1、L2所能設置的位置而言,光罩R所能提供的相容性較為寬裕。當干涉計110的設置位置隨著不同種類或不同品牌的曝光裝置而有所不同時,本實施例之相容性較高的光罩R可適用於較多種類或品牌的曝光裝置。 Please refer to FIG. 6, which is a schematic diagram of a photomask according to a third embodiment of the present invention. As shown in Figure 6 As shown, this embodiment is different from the first embodiment in that the reflective structure 118 covers a side wall 116 over the entire surface. In this embodiment, the reflective structure 118 is disposed on one of the two side walls 1161 perpendicular to the first direction X and covers the entire side wall 1161, so that the laser beams L1 and L2 can be analyzed through the corresponding interferometer 110. The position information of the photomask R in the first direction X is measured. In addition, the reflective structure 118 can also be disposed at the same time and cover the two side walls 1161 on the entire surface. In other embodiments, if the position information of the photomask R in the second direction Y is to be measured, the reflective structure 118 may be disposed on at least one sidewall 1162 perpendicular to the second direction Y and cover the sidewall 1162 over the entire surface. To measure the position information of the photomask R in the first direction X and the second direction Y at the same time, the reflective structure 118 may be disposed on the at least one side wall 1161 and the at least one side wall 1162, and cover the side wall 1161 and the side wall 1162 on the entire surface. . According to this embodiment, since the reflective structure 118 covers the entire side wall 1161 or 1162 on the entire surface, the corresponding compatibility of the interferometer 110 and the laser beams L1 and L2 can be provided by the compatibility of the photomask R. More generous. When the installation position of the interferometer 110 varies with different types or brands of exposure devices, the photomask R with high compatibility in this embodiment can be applied to more types or brands of exposure devices.

請參考第7圖,第7圖為本發明第四實施例之光罩的示意圖。如第7圖所示,本實施例與第二實施例不同的地方在於,邊緣部R21環繞圖案區R1,且反射結構118整面覆蓋邊緣部R21,亦即反射結構118沿主表面114的四個側邊環繞圖案區R1以及內緣部R22。由於反射結構118是由具反射性的材料所形成,因此光罩R的邊緣部R21為一不透光區域,而圖案區R1與內緣部R22為一透光區域,且對位記號120設置於內緣部R22,使得對位記號120能夠與晶圓W上的對位記號對準。由於本實施例的反射結構118整面覆蓋邊緣部R21,因此對於對應配合的干涉計110及雷射光束L1、L2所能設置的位置而言,光罩R所能提供的相容性較為寬裕。當干涉計110的設置位置隨著不同種類或不同品牌的曝光裝置而有所不同時,本實施例之相容性較高的光罩R可適用於較多種類或品牌的曝光裝置。在 其他實施例中,反射結構118亦可僅整面覆蓋主表面114之其中任一側、任兩側或任三側的邊緣部R21。本實施例設有反射結構118的主表面114為基板112的上表面。在其他實施例中,設有反射結構118的主表面114亦可依需求為基板112的下表面。在此情況下,由於光罩承載平台102之真空吸引墊吸引基板112的下表面,因此反射結構118所設置的位置應避開基板112下表面中對應真空吸引墊的位置。 Please refer to FIG. 7, which is a schematic diagram of a photomask according to a fourth embodiment of the present invention. As shown in FIG. 7, this embodiment is different from the second embodiment in that the edge portion R21 surrounds the pattern region R1 and the entire surface of the reflective structure 118 covers the edge portion R21, that is, the four sides of the reflective structure 118 along the main surface 114 The sides surround the pattern region R1 and the inner edge portion R22. Since the reflective structure 118 is formed of a reflective material, the edge portion R21 of the photomask R is an opaque area, and the pattern area R1 and the inner edge portion R22 are a light-transmissive area, and the registration mark 120 is set. At the inner edge portion R22, the alignment mark 120 can be aligned with the alignment mark on the wafer W. Since the reflective structure 118 of this embodiment covers the entire edge portion R21, the compatibility provided by the photomask R is relatively wide for the positions that can be set by the corresponding interferometer 110 and the laser beams L1 and L2. . When the installation position of the interferometer 110 varies with different types or brands of exposure devices, the photomask R with high compatibility in this embodiment can be applied to more types or brands of exposure devices. in In other embodiments, the reflective structure 118 may cover only the entire surface of the edge portion R21 on any one side, any two sides, or any three sides of the main surface 114. The main surface 114 provided with the reflective structure 118 in this embodiment is the upper surface of the substrate 112. In other embodiments, the main surface 114 provided with the reflective structure 118 may also be the lower surface of the substrate 112 as required. In this case, since the vacuum suction pad of the photomask carrying platform 102 attracts the lower surface of the substrate 112, the position of the reflective structure 118 should be avoided from the position of the vacuum suction pad in the lower surface of the substrate 112.

請參考第8圖,第8圖為本發明第五實施例之光罩的示意圖。如第8圖所示,在本實施例中,反射結構118設置於基板112的四個側壁116,並整面覆蓋側壁116,同時反射結構118亦設置於主表面114的邊緣部R21,其中反射結構118整面覆蓋邊緣部R21而環繞內緣部R22及圖案區R1。此外,主表面114可為基板112的上表面或下表面,且反射結構118亦可同時設置於基板112的上表面及下表面。藉此,可在第一方向X、第二方向Y或垂直投影方向V上對應光罩R設置干涉計110,並可透過干涉計110分析雷射光束L1、L2測量光罩R於第一方向X、第二方向Y或垂直投影方向V上的位置資訊。另補充說明的是,當反射結構118設置於下表面的邊緣部R21時,由於光罩承載平台102之真空吸引墊吸引基板112的下表面,因此反射結構118所設置的位置應避開基板112下表面中對應真空吸引墊的位置。由於本實施例的反射結構118整面覆蓋表面114的邊緣部R21以及側壁116,因此對於對應配合的干涉計110及雷射光束L1、L2所能設置的位置而言,光罩R所能提供的相容性較為寬裕。當干涉計110的設置位置隨著不同種類或不同品牌的曝光裝置而有所不同時,本實施例之相容性較高的光罩R可適用於較多種類或品牌的曝光裝置。 Please refer to FIG. 8, which is a schematic diagram of a photomask according to a fifth embodiment of the present invention. As shown in FIG. 8, in this embodiment, the reflective structure 118 is disposed on the four side walls 116 of the substrate 112 and covers the entire side wall 116. At the same time, the reflective structure 118 is also disposed on the edge portion R21 of the main surface 114. The structure 118 covers the entire edge portion R21 and surrounds the inner edge portion R22 and the pattern region R1 over the entire surface. In addition, the main surface 114 may be an upper surface or a lower surface of the substrate 112, and the reflective structure 118 may also be disposed on the upper surface and the lower surface of the substrate 112 at the same time. Thereby, the interferometer 110 can be set corresponding to the mask R in the first direction X, the second direction Y or the vertical projection direction V, and the laser beams L1 and L2 can be analyzed by the interferometer 110 to measure the mask R in the first direction. Position information in X, second direction Y, or vertical projection direction V. In addition, when the reflective structure 118 is disposed on the lower edge R21, the vacuum suction pad of the photomask supporting platform 102 attracts the lower surface of the substrate 112. Therefore, the reflective structure 118 should be located away from the substrate 112. The position in the lower surface corresponding to the vacuum suction pad. Since the reflective structure 118 of this embodiment covers the entire surface of the edge portion R21 and the side wall 116 of the surface 114, the corresponding position of the interferometer 110 and the laser beams L1 and L2 can be provided by the photomask R. Compatibility is more generous. When the installation position of the interferometer 110 varies with different types or brands of exposure devices, the photomask R with high compatibility in this embodiment can be applied to more types or brands of exposure devices.

值得一提的是,在不超出本發明之精神的情況下,前述各實施例的 不同技術特徵彼此之間可互相置換而重新搭配,以組合出另一實施例。 It is worth mentioning that, without exceeding the spirit of the present invention, the Different technical features can be replaced with each other and re-matched to form another embodiment.

綜上所述,本發明之光罩及利用此光罩所進行光罩承載平台的維護方法可有效地確認光罩承載平台上的固定元件(如真空吸引墊)的光罩固定效能,進而瞭解固定元件或光罩承載平台的表面清潔度。此外,利用干涉計測量光罩在光罩承載平台的移動過程中是否發生位移所花費的時間只需約兩分鐘至三分鐘,並可使用習知曝光裝置本身所配備的干涉計並搭配本發明光罩的反射結構,以得知光罩是否移位。藉此,透過本實施例的光罩及光罩承載平台的維護方法可有效減少重複使用預修保養光罩進行檢測的次數,以有效節省時間並降低成本。此外,本發明之光罩可具有整面或部分覆蓋光罩側壁的反射結構,亦可具有整面或部分覆蓋光罩上、下表面之邊緣部的反射結構,在整面覆蓋的設計中,本發明之光罩能提供較為寬裕的相容性,而可適用於較多種類或品牌的曝光裝置。 To sum up, the photomask of the present invention and the method for maintaining the photomask carrying platform using the photomask can effectively confirm the photomask fixing performance of the fixed components (such as vacuum suction pads) on the photomask carrying platform, and further understand Cleanliness of the surface of the mounting element or reticle carrying platform. In addition, it takes only about two to three minutes to measure whether the photomask is displaced during the movement of the photomask carrying platform using an interferometer, and the interferometer provided with the conventional exposure device itself can be used with the present invention. The reflective structure of the photomask to know whether the photomask is displaced. Thereby, the maintenance method of the photomask and the photomask bearing platform of this embodiment can effectively reduce the number of times that the pre-maintenance photomask is used for inspection, thereby effectively saving time and reducing costs. In addition, the photomask of the present invention may have a reflective structure that covers the entire surface or part of the sidewall of the photomask, or a reflective structure that covers the entire surface or part of the upper and lower edges of the photomask. In the design of the entire surface, The photomask of the present invention can provide relatively wide compatibility, and can be applied to more types or brands of exposure devices.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the scope of patent application of the present invention shall fall within the scope of the present invention.

Claims (6)

一種光罩承載平台的維護方法,包括:提供一光罩,置放於一曝光裝置中的一光罩承載平台上,並以該光罩承載平台上的一固定元件將該光罩固定於該光罩承載平台上,其中該光罩承載平台為可移動式平台,而該光罩包括:一基板,包括一主表面與至少一側壁,該主表面與該側壁相接,其中該主表面包括:一圖案區;以及一周邊區,設置於該圖案區的一外側;以及一反射結構,至少設置於該側壁表面或設置於該主表面之該周邊區;進行一第一檢測步驟,移動該光罩承載平台,並透過一雷射光束照射該反射結構以測量該光罩的一位置資訊;以及進行一確認步驟,由該位置資訊判定該光罩在該光罩承載平台上是否發生位移,當該光罩發生位移時,則判定該固定元件之效能不合格,以及當該光罩未發生位移時,則判定該固定元件之效能合格,其中當該固定元件之效能不合格時,對該固定元件進行清潔,以及在清潔之後再次提供該光罩並進行該第一檢測步驟與該確認步驟。A method for maintaining a photomask carrying platform includes: providing a photomask placed on a photomask carrying platform in an exposure device, and fixing the photomask to the photomask using a fixing element on the photomask carrying platform. The photomask carrying platform, wherein the photomask carrying platform is a movable platform, and the photomask includes: a substrate including a main surface and at least one side wall, the main surface being connected to the side wall, wherein the main surface includes : A pattern area; and a peripheral area disposed on an outer side of the pattern area; and a reflective structure disposed at least on the side wall surface or the peripheral area on the main surface; performing a first detection step to move the light A mask carrying platform, and irradiating the reflective structure through a laser beam to measure a position information of the mask; and performing a confirmation step to determine whether the mask is displaced on the mask bearing platform from the position information, when When the photomask is displaced, the performance of the fixed element is judged to be unsatisfactory, and when the photomask is not displaced, the performance of the fixed element is judged to be pass, where When the performance of the defective element, the fixing element is cleaned, and providing the reticle and again after the cleaning step of the first detecting step and the acknowledgment. 如請求項1所述之光罩承載平台的維護方法,其中該固定元件包括一真空吸引墊(vacuum pad)。The method for maintaining a reticle carrying platform according to claim 1, wherein the fixing element includes a vacuum pad. 如請求項1所述之光罩承載平台的維護方法,其中當該固定元件之效能合格時,提供一產品光罩並以該產品光罩進行曝光。The method for maintaining a photomask carrying platform according to claim 1, wherein when the performance of the fixing element is qualified, a product photomask is provided and exposed using the product photomask. 如請求項1所述之光罩承載平台的維護方法,其中再次進行該確認步驟後判定該固定元件之效能為合格時,提供一預修保養(preventive maintenance,PM)光罩進行一第二檢測步驟,以測定經該曝光裝置所形成的一曝光圖案是否發生變形(distortion)。The method for maintaining a mask carrying platform according to claim 1, wherein when the performance of the fixed component is determined to be qualified after performing the confirmation step again, a preventive maintenance (PM) mask is provided for a second inspection Step to determine whether a exposure pattern formed by the exposure device is distorted. 如請求項1所述之光罩承載平台的維護方法,係於該曝光裝置進行曝光製程並發現曝光失敗時進行,且該維護方法另包括先對該光罩承載平台上的該固定元件進行清潔,才提供該光罩至該光罩承載平台上並進行該第一檢測步驟以及該確認步驟。The method for maintaining the photomask carrying platform according to claim 1, is performed when the exposure device performs an exposure process and finds that the exposure fails, and the maintenance method further includes cleaning the fixing element on the photomask carrying platform Before providing the photomask to the photomask carrying platform and performing the first detection step and the confirmation step. 如請求項1所述之光罩承載平台的維護方法,其中該第一檢測步驟包括利用一干涉計透過該雷射光束與所對應的該反射結構測量該光罩的該位置資訊。The method for maintaining a photomask carrying platform according to claim 1, wherein the first detecting step comprises measuring the position information of the photomask through an interferometer through the laser beam and the corresponding reflection structure.
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