TWI250819B - Method for making a field emission display - Google Patents

Method for making a field emission display Download PDF

Info

Publication number
TWI250819B
TWI250819B TW93115269A TW93115269A TWI250819B TW I250819 B TWI250819 B TW I250819B TW 93115269 A TW93115269 A TW 93115269A TW 93115269 A TW93115269 A TW 93115269A TW I250819 B TWI250819 B TW I250819B
Authority
TW
Taiwan
Prior art keywords
field emission
layer
conductive
emission display
insulating layer
Prior art date
Application number
TW93115269A
Other languages
Chinese (zh)
Other versions
TW200539736A (en
Inventor
Yang Wei
Shou-Shan Fan
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW93115269A priority Critical patent/TWI250819B/en
Publication of TW200539736A publication Critical patent/TW200539736A/en
Application granted granted Critical
Publication of TWI250819B publication Critical patent/TWI250819B/en

Links

Abstract

The present invention relates to a method for making a triode type field emission display. A preferred embodiment of the invention comprises: dispersing a number of carbon nanotubes onto a cathode layer formed on an insulating substrate; forming an insulating layer on the cathode layer perpendicular to a length direction of the cathode layer; forming a gate electrode on a top of the insulating layer; making the carbon nanotubes located nearby two sides of the gate electrode standing up on the cathode layer; packaging and sealing a phosphor plate and a spacer, therefore a field emission display is obtained. According to the embodiment, electrons are extracted from the carbon nanotubes and are deflected and focused on a center area of a corresponding pixel by the gate electrode.

Description

12508191250819

【發明所屬之技術領域】 本發明涉及一種平面顯示器之製備 米破管場發射顯示器之製備方法。 【先前技術】 場發射顯示器 (LCD)顯示器之後 對於現有之顯示器 大、功耗小以及體 發射顯示器,即奈 來越來越受到重視 奈米碳管係一 能,以及幾乎接近 小,其局部電場愈 管係已知最好之場 約2伏/微米),可 穩定,因而非常適 碳管生長技術之曰 已經取得一系列重 一般而言,場 極型。所謂二極型 種結構由於需要施 以控制,驅動電路 之貫際應用。三極 有栅極來控制電子 種新型 理論極 集中, 發射材 傳輸極 合做場 益成熟 要進展 發射顯 即包括 加南電 成本高 型結構 發射, 尤其涉及一種奈, 係繼陰極射線管(CRT)顯示器及液晶 ,最具發展潛力之下—代新興技術。相 ,場發射顯示器具有顯示效果好、視角 積小等優點,尤其係基於奈米碳管之場 米碳管場發射顯示器(CNT_FED),近年 碳材料,其具有極優異之導電性 ^之尖:端表面積(尖端表面積愈 %增強因子愈大),所以奈米碳 料,它具有極低之開啟電場(大 大之電流密度,並且發射電流極 發射顯示器之發射體。隨著奈米 ’奈米碳管場發射顯示器之研究 〇 不器之結構可以分為二極型及三 有陽極及陰極之場發射結構,這 壓’而且均勻性以及電子發射難 ’基本上不適合高解析度顯示器 則係在二極型基礎上改進,增加 可以實現於較低電壓條件下發出BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a flat-panel display. [Prior Art] After the field emission display (LCD) display, the existing display is large, the power consumption is small, and the body emission display is more and more important, and the nano-carbon tube system is more and more important, and the local electric field is almost small. The best known field of the tube system is about 2 volts/micron, which is stable, so it is very suitable for the carbon tube growth technology. The so-called two-pole type structure requires a control and a continuous application of the drive circuit. The three poles have gates to control the new theory of electrons, and the emission of the emitters is very mature. The launching of the emitters includes the costly structure of the Canadian power transmission, especially involving a cathode, followed by a cathode ray tube (CRT). ) Display and LCD, under the most development potential - on behalf of emerging technologies. Phase-emitting display has the advantages of good display effect and small viewing angle, especially based on the carbon nanotube field emission display (CNT_FED) of carbon nanotubes. In recent years, carbon materials have excellent conductivity. The end surface area (the larger the tip surface area is, the greater the % enhancement factor), so the nano carbon material, which has a very low on-state electric field (large current density, and emits an emitter of the current-emitting display. With the nano 'nano carbon The research of the tube field emission display can be divided into two-pole type and three field emission structures with anode and cathode. This pressure is not suitable for high-resolution displays. Improvement based on the polar type, the increase can be achieved under lower voltage conditions

第6頁 1250819 五、發明說明(2) "'—' 電子’而且電子發射容易通過栅極來精確控制。 如第十一圖所示,目前典型之三極型場發射裝置,其 包括一基底101,形成於基底101上之絕緣層1〇2,形成於、 絕緣層102上之柵極103,其中絕緣層1〇2及栅極1〇3形成有 穿孔104以>供發射電子穿過,在穿孔1〇4底端形成有發射電 子之發射兀件105,此處它亦為陰極。另外,在柵極1〇3上 方間隔一定距離之位置係陽極1〇6以及螢光層1〇7。使用 時,施加不同電壓於陽極丨〇 6、柵極丨〇 3及陰極,電子即可 從發射元件105發射出,並穿過穿孔1〇4,然後於陽極1〇6 形成之電場作用下加速到達陽極丨〇 6及螢光層丨〇7,激發螢 光層107發出可見光。一般陽極1〇6電壓係幾千伏,栅極 103之電壓為1〇〇伏左右。這種結構之場發射顯示裝置,發 射之電子由於受兩侧柵極丨03之電場作用,有一大部分電 子110及111會發生較大角度之偏轉, 之區域?打到與發射元件105正對區域之中心日位置之電卜 子很少,這樣就導致顯示之圖元點較大,難以適應高解析 度之平面顯示;即使一小部分電子能夠打到螢光層1〇7之 區域、,也係打到邊緣區域之電子多,打在中央位置之電子 少’造成圖元點中央暗,邊緣亮之不良效果。 *請參見第十二圖,為解決上述問題,T〇shiba公司之 研究人員Hironori Asai等人於20 0 2年9月3日公告之美國 專利第6,445, 1 24號提出一種改進之結構,主要包括一基 底211,一陰極層203形成於基底211上,絕緣層2〇2及柵土極 2〇1順序形成於陰極層2 0 3上,並形成有穿孔,於穿孔之底 1250819 五、發明說明(3) 端、陰極層2 0 3上形成有電子發射層2 〇 7,用以發射電子。 其改進之處在於,上述結構需符合L/s之比值大於或等於 1 ’其中S係穿孔之直徑,[係電子射出到達柵極2 〇 1之最短 距離’也即係電子發射層2〇7與柵極2之最短距離。 s種結構由於L需比較大,即電子發射層2 〇 7之電子發 射端與栅極2〇1之距離較大,使得栅極2〇1需很高電壓才能 夠形成足夠之電場作用將電子從電子發射層2 〇 7撥出, 故,不利於降低發射電壓,亦會提高該裝置之電能消耗; 另外,由於電子發射層2 〇 7位於絕緣層2 〇 2底端,電子發射 點距離柵極2〇1較遠,發射出之電子很大部份被絕緣層20 2 阻擋吸收(這一點也係這種結構能夠減少橫向擴散電子之 原因),故,發射電子之有效利用率很低,不可避影 響圖像之顯示亮度。 曰 【内容】 為解 及由於電 技術問題 備方法, 電子,可 對應之圖 圖像顯示 決現有技術之場發射顯示器栅極發射電壓高,以 子發射體周圍之柵極對電子發射產生擴散作用等 ,本發明之目的在於提供一種場發射顯示器之製 由該方法製得之場發射顯示器可於低電壓下發射 以有效之控制發射電子之方向,將電子束聚焦到 元區域,減小電子束斑點之寬度,f現高解^度 為實現上述發明目的, 之製備方法,其包括下列步 於絕緣基底表面形成之導電 本發明提供一種場發射顯示器 驟·步驟一,將奈米碳管分佈 陰極層上,步驟二,於導電陰Page 6 1250819 V. INSTRUCTIONS (2) "'-'Electronics' and electron emission is easily controlled by the gate. As shown in FIG. 11, a typical three-pole field emission device comprises a substrate 101, an insulating layer 1〇2 formed on the substrate 101, and a gate 103 formed on the insulating layer 102, wherein the substrate is insulated. The layer 1 〇 2 and the gate 1 〇 3 are formed with perforations 104 to allow electrons to pass therethrough, and at the bottom end of the perforations 1 〇 4 are formed electron-emitting emission elements 105, which are also cathodes. Further, the anode 1〇6 and the phosphor layer 1〇7 are located at a position spaced apart from the gate electrode 1〇3 by a certain distance. In use, different voltages are applied to the anode 丨〇6, the gate 丨〇3 and the cathode, and electrons can be emitted from the emitting element 105, pass through the through hole 1〇4, and then accelerate under the electric field formed by the anode 1〇6. Upon reaching the anode 丨〇6 and the phosphor layer 丨〇7, the excitation phosphor layer 107 emits visible light. Generally, the voltage of the anode 1 〇 6 is several thousand volts, and the voltage of the gate 103 is about 1 volt. In the field emission display device of this structure, the electrons emitted by the electrons of the two sides of the gate 丨03 act, and a large portion of the electrons 110 and 111 are deflected at a large angle. There are few electric horns hitting the center of the area facing the transmitting element 105, which results in a large display element point, which is difficult to adapt to a high-resolution flat display; even a small portion of the electrons can hit the fluorescent In the area of layer 1〇7, there are many electrons hitting the edge area, and the number of electrons hitting the central position is small, causing the central point of the element to be dark and the edge to be bright. *Please refer to the twelfth figure, in order to solve the above problem, the improved structure is proposed by U.S. Patent No. 6,445, 1 24, published by the researcher of the T〇shiba company, Hironori Asai, et al., September 3, 203. A substrate 211 is formed. A cathode layer 203 is formed on the substrate 211. The insulating layer 2〇2 and the gate electrode 2〇1 are sequentially formed on the cathode layer 202, and are formed with perforations at the bottom of the perforation 1250819. Description (3) An electron-emitting layer 2 〇7 is formed on the end and cathode layers 2 0 3 for emitting electrons. The improvement is that the above structure needs to conform to the ratio of L/s to be greater than or equal to 1 'where the diameter of the S-type perforation, [the shortest distance from the electron emission to the gate 2 〇1] is also the electron emission layer 2〇7 The shortest distance from the gate 2. The structure of s is relatively large, that is, the distance between the electron-emitting end of the electron-emitting layer 2 〇7 and the gate 2〇1 is large, so that the gate 2〇1 needs a very high voltage to form a sufficient electric field to act on the electron. It is not easy to reduce the emission voltage and also increase the power consumption of the device. Further, since the electron emission layer 2 〇7 is located at the bottom end of the insulating layer 2 , 2, the electron emission point is away from the gate. The pole 2〇1 is far away, and most of the emitted electrons are blocked and absorbed by the insulating layer 20 2 (this is also the reason why the structure can reduce the lateral diffusion of electrons), so the effective utilization rate of the emitted electrons is low. It is inevitable to affect the display brightness of the image.曰[Contents] For the solution and the method of electrical technical problems, the electrons can correspond to the image display. The field emission display of the prior art field has a high gate emission voltage, and the gate around the sub-emitter has a diffusion effect on the electron emission. Etc. The object of the present invention is to provide a field emission display. The field emission display produced by the method can be emitted at a low voltage to effectively control the direction of emitted electrons, focus the electron beam to the element region, and reduce the electron beam. The width of the spot, the high resolution of the f, is a preparation method for achieving the above object, and comprises the following steps of conducting electricity formed on the surface of the insulating substrate. The present invention provides a field emission display. Step 1 is to distribute the carbon nanotube to the cathode. On the layer, step two, on the conductive cathode

1250819 五、發明說明(4) 極層上正交形成絕緣層;步驟二, ^ 電柵極;步·驟四,使分佈於所述 ^、、、巴緣層上形成導 層上之奈米碳管直立於所述導電陰極声5兩側之導電陰極 螢光屏及密封侧壁。 κ ° 9上,步驟五,封裝 與現有技術相車交,本發明方法具有 管圍繞中心之柵極而形成,這種社 .....奈米碳 射電子及聚焦電子之作用,即柵^ : 拇極同時具有發 I珊極之電場可 纟 運動之方向,使電子束打到螢光尸 夂电子束 現高解析度之平面顯示。先屏上之斑點變小,從而實 【實施方式】 細描i面結合附圖及具體實施例對本發明之實施方式作詳 首先請參見第六目,係本發明實施例之場發射顯干哭 1之不意圖,包括形成於玻璃基底1〇表面之陰極12,… 於陰極12長度方向壓置於陰極12上之絕緣層13,形成於 緣層13上之柵極14,直立分佈於絕緣層13兩側之陰極。上 之奈米碳管16,於柵極14上方間隔一定距離之對應位置係 形成於陽極18上之螢光層19,其中陽極18係附著形成於透 明玻璃板1 7面對陰極1 2之表面。 上述陰極1 2係由導電材料,如丨τ〇 (銦錫氧化物)導 電膜或金屬層做成之長條或帶狀,形成於玻璃基底丨〇上; 顯然’有多個陰極1 2時,可以互相平行形成於玻璃基底丄〇 表面。 絕緣層1 3係由絕緣材料做成,例如玻璃。1250819 V. INSTRUCTIONS (4) Forming an insulating layer orthogonally on the pole layer; Step 2, ^ Electrical grid; Step 4, so that the nanometers distributed on the layer of the ^, , and the edge layer are formed on the layer The carbon tube is erected on the conductive cathode fluorescent screen and the sealing sidewall on both sides of the conductive cathode sound 5. κ ° 9, step 5, the package is in contact with the prior art, the method of the invention has a tube formed around the center of the gate, the role of the nanocarbon and electrons, ie, the grid ^ : The thumb pole also has an electric field that can be used to move the electron beam to the high-resolution flat display of the electron beam. First, the spot on the screen becomes smaller, so that the embodiment of the present invention is described in detail with reference to the accompanying drawings and specific embodiments. Referring to the sixth item, the field emission of the embodiment of the present invention is crying. 1 is not intended to include a cathode 12 formed on the surface of the glass substrate 1 , an insulating layer 13 pressed against the cathode 12 in the longitudinal direction of the cathode 12 , and a gate electrode 14 formed on the edge layer 13 , which is vertically distributed on the insulating layer 13 cathodes on both sides. The upper carbon nanotubes 16 are formed on the phosphor layer 19 on the anode 18 at a corresponding distance above the gate electrode 14. The anode 18 is attached to the surface of the transparent glass plate 71 facing the cathode 12. . The cathode 12 is formed of a conductive material such as a 丨τ〇 (indium tin oxide) conductive film or a metal layer in the form of a strip or strip formed on the glass substrate ;; obviously when there are a plurality of cathodes 1 2 They may be formed parallel to each other on the surface of the glass substrate. The insulating layer 13 is made of an insulating material such as glass.

第9頁 國 1250819 五、發明說明(5) " 奈米碳管1 6之高度比絕緣層1 3低一定距離,即奈米碳 管16之頂端位於柵極14下方一定距離處,以避免^極12及 柵極14短路;但’奈米峻管16之高度本身並沒有:何限 制,並且,其頂端與柵極14之距離沒有類似美國專利第 6,445,124號之範圍限制,即奈米碳管16之頂端可以靠近 栅極14(但不接觸),考慮到過分靠近栅極14有可能產生短 路,所以,奈米碳管1 6之頂端與栅極丨4之距離旄^適中, 即在不影響電子20發射之情況下,為降低開啟電^,可以 盡可能接近栅極1 4。 另外舄要才曰出’貝際上奈米碳管1 6之高度、直徑非常 小’而且常常以奈米碳管束之形式存在,圖中示出單根奈 米碳管1 6僅僅係為了簡單、便於說明,所以,不能因此限 制本發明之範圍。 陽極18可由IT0導電膜做成;於陽極18表面形成有螢 光層19,當受到電子20轟擊時可發出可見光; 上述陽極1 8通過絕緣之間隔側壁丨5支撐,與陰極丨2、 柵極1 4以及奈米碳管1 6隔開一定距離,並密封後抽成真 空,形成一内部空間。 優選,絕緣層1 3之形狀呈楔形,即絕緣層1 3與陰極1 2 接觸之底面寬度最大,與柵極14接觸之頂面寬度最小,從 該底面到頂面這一段之寬度逐漸縮小。 請一併參見第一圖至第六圖,本發明場發射顯示器之 製備方法包括下列步驟: 步驟一 ’將奈米碳管16分佈.於絕緣玻璃基底1〇表面形Page 9 Country 1250819 V. Invention Description (5) " The height of the carbon nanotube 16 is lower than the insulation layer 13 by a certain distance, that is, the top end of the carbon nanotube 16 is located at a certain distance below the gate 14 to avoid The pole 12 and the gate 14 are short-circuited; however, the height of the nanotube 16 is not itself: what is the limit, and the distance between the tip and the gate 14 is not limited to the range of the US Patent No. 6,445,124. The top end of the carbon nanotube 16 can be close to the gate 14 (but not in contact). Considering that the short circuit is too close to the gate 14, the distance between the top end of the carbon nanotube 16 and the gate 丨4 is moderate. That is, in order to reduce the turn-on voltage, the gate 14 can be as close as possible without affecting the emission of the electrons 20. In addition, it is necessary to find out that 'the height of the carbon nanotubes on the shell is very small, the diameter is very small' and often exists in the form of a carbon nanotube bundle. The figure shows that the single carbon nanotube 16 is only for the sake of simplicity. It is convenient to explain, and therefore, the scope of the invention cannot be limited thereby. The anode 18 can be made of an IT0 conductive film; a phosphor layer 19 is formed on the surface of the anode 18, and visible light can be emitted when bombarded by the electrons 20; the anode 18 is supported by the insulating spacer sidewalls 5, and the cathode 丨2, the gate 1 4 and the carbon nanotubes 16 are separated by a certain distance, and sealed and evacuated to form an internal space. Preferably, the shape of the insulating layer 13 is wedge-shaped, that is, the width of the bottom surface of the insulating layer 13 in contact with the cathode 12 is the largest, and the width of the top surface in contact with the gate electrode 14 is the smallest, and the width from the bottom surface to the top surface is gradually reduced. Referring to FIG. 1 to FIG. 6 together, the method for preparing the field emission display of the present invention comprises the following steps: Step 1 'Distributing the carbon nanotubes 16 on the surface of the insulating glass substrate 1

第10頁 1250819Page 10 1250819

成之陰極1 2 μ t 太米碳管聚粗^述步驟可以通過多種途徑實現,例如將 二二& 14直接塗覆於製備好之破璃基底1 0表面之陰極 1 2表面。也可通過下列途徑實現: a)先在破璃基底1〇表面製備出親水之陰極a ; ,1f後於破璃基底10表面塗覆一層疏水之光刻膠11, 並用標準之光刻工藝將陰極丨2表面之光刻膠丨丨去除,使得 陰極1 2顯露出來(如第一圖所示); c)將奈米碳管溶於有機溶劑,經超聲分散後配製成奈 米碳管溶液備用; d) 將上述處理好之玻璃基底丨〇垂直浸入配製好之奈米 碳管溶液中,使得奈米碳管粘附於親水之陰極丨2表面; e) 用洗脫劑(例如丙酮)將光刻膠11洗去,這樣於陰極 12表面均勻分佈有一層奈米碳管(如第二圖所示,其中奈 米碳管未示出)。 步驟二,於陰極1 2上正交形成絕緣層丨3 ;絕緣層丨3可 以為玻璃材料。可以通過絲網印刷之方法印上一層條狀玻 璃漿料,然後燒結形成絕緣層1 3 (如第三圖所示)。這樣, 粘附於陰極1 2表面之部分奈米碳管(圖未示出)可能完全被 絕緣層1 3覆蓋壓住;有一部分奈米碳管可能一端被絕緣層 13覆蓋壓住,而另一知藤出於絕緣層13外面,這部分奈米 碳管經後續步驟處理後可以成為電子發射體。 步驟三,於所述絕緣層1 3頂端形成柵極1 4 ;柵極1 4 一 般係導電性良好之金屬材料,例如銀、銅等,這裏僅以銀 為例來說明。形成柵極1 4之方法可以用絲網印刷法於絕緣The cathode can be made by a plurality of steps, for example, by applying the bis & 14 directly to the surface of the cathode 12 of the surface of the prepared glass substrate 10 . It can also be achieved by: a) preparing a hydrophilic cathode a on the surface of the glass substrate 1; after 1f, applying a hydrophobic photoresist 11 on the surface of the glass substrate 10, and using a standard photolithography process The photoresist crucible on the surface of the cathode crucible 2 is removed, so that the cathode 12 is exposed (as shown in the first figure); c) the carbon nanotubes are dissolved in an organic solvent, and dispersed by ultrasonication to prepare a carbon nanotube. The solution is prepared; d) the above treated glass substrate is vertically immersed in the prepared carbon nanotube solution so that the carbon nanotube adheres to the surface of the hydrophilic cathode ; 2; e) with an eluent (for example, acetone) The photoresist 11 is washed away so that a layer of carbon nanotubes is uniformly distributed on the surface of the cathode 12 (as shown in the second figure, wherein the carbon nanotubes are not shown). In step two, an insulating layer 丨3 is formed orthogonally on the cathode 12; the insulating layer 丨3 may be a glass material. A strip of glass paste can be printed by screen printing and then sintered to form an insulating layer 13 (as shown in the third figure). Thus, a portion of the carbon nanotubes (not shown) adhered to the surface of the cathode 12 may be completely covered by the insulating layer 13; a part of the carbon nanotubes may be covered with the insulating layer 13 at one end, and the other One of the carbon nanotubes is outside the insulating layer 13, and this portion of the carbon nanotubes can be an electron emitter after being processed in a subsequent step. In the third step, the gate electrode 14 is formed on the top end of the insulating layer 13. The gate electrode 14 is generally a metal material having good conductivity, such as silver or copper. Here, only silver is used as an example. The method of forming the gate 14 can be insulated by screen printing

第11頁 1250819 五、發明說明(7) 層1 3頂端印上一層銀漿料,然後燒結形成栅極1 4 (如第四 圖所示)。 步驟四,使分佈於所述柵極1 4兩側之陰極1 2表面之奈 米破管1 6直立;此步驟可有多種方法實現:可以用粘性之 膠帶(圖未示)貼於陰極表面,上述步驟二形成之一端被絕 緣層1 3覆蓋壓住、另一端露出於外面之部分奈米碳管以及 絕緣層1 3附近之部分奈米碳管一端被粘著於膠帶之粘性表 面’然後拉起膠帶將原來倒伏在陰極12表面之奈米碳管工6 拉起’使其基本直立於陰極12表面;或者通過強電場作用 於奈米碳管16,使其基本直立於陰極12表面。結果如第五 圖所不’這些直立之奈米碳管16就可作為電子發射體。 步驟五’封裝螢光屏及側壁丨5。螢光屏包括透明之玻 璃板1 7 ’陽極1 8及螢光層1 9。經過對中,排氣(抽真 空)’最後封裝完成場發射顯示器1 (如第六圖所示)。 再f參見第六圖,場發射顯示器1使用時,分別施加 不同電壓給陽極18,栅極14及陰極12 ( 一般情況下,陽極 18之電壓為1〇〇〇伏至數千伏,柵極14之電壓為幾十伏至 100伏左右,陰極12為接地或零電壓),於栅極14之電場 作用=,電子20從奈米碳管16頂端發射出來,並於陽極18. 之電%作用下’穿過内部空間加速轟擊至螢光層丨9發出可 見光。本發明之場發射結構中,柵極14之位置對應於螢光 層1 9之各個圖兀點中心處,電子發射體奈米碳管i 6則分別 位於柵極14兩側,這種結構可稱為中央栅極結構,係本發 明%發射顯不為之關鍵之處。這樣,柵極丨4不僅起到將電Page 11 1250819 V. INSTRUCTIONS (7) A layer of silver paste is printed on the top of layer 1 3 and then sintered to form gate 14 (as shown in the fourth figure). In step four, the nanotubes 16 disposed on the surfaces of the cathodes 12 on both sides of the gates 14 are erected; this step can be carried out in various ways: it can be attached to the cathode surface with a sticky tape (not shown). In the above step 2, a portion of the carbon nanotubes covered by the insulating layer 13 and the other end exposed to the outside and a portion of the carbon nanotubes near the insulating layer 13 are adhered to the adhesive surface of the tape. The tape is pulled up to pull up the carbon nanotubes 6 which are originally poured on the surface of the cathode 12 to make them substantially erect on the surface of the cathode 12; or act on the carbon nanotubes 16 by a strong electric field so as to be substantially erected on the surface of the cathode 12. As a result, the upright carbon nanotubes 16 can be used as electron emitters as shown in the fifth figure. Step 5' encapsulates the phosphor screen and the side wall 丨5. The phosphor screen includes a transparent glass plate 1 7 'anode 1 8 and a phosphor layer 19. After centering, the exhaust (sucking vacuum)' final package completes the field emission display 1 (as shown in Figure 6). Referring to the sixth figure, when the field emission display 1 is used, different voltages are applied to the anode 18, the gate 14 and the cathode 12 (generally, the voltage of the anode 18 is 1 volt to several thousand volts, the gate The voltage of 14 is about tens of volts to 100 volts, the cathode 12 is grounded or zero voltage, and the electric field at the gate 14 acts = the electron 20 is emitted from the top of the carbon nanotube 16 and is electrically charged at the anode 18. Under the action of 'accelerating bombardment through the internal space to the phosphor layer 丨9 emits visible light. In the field emission structure of the present invention, the position of the gate electrode 14 corresponds to the center of each pixel of the phosphor layer 19, and the electron emitter carbon nanotubes i6 are respectively located at the sides of the gate electrode 14. Known as the central gate structure, the % emission of the present invention is not critical. In this way, the gate 丨4 not only plays electricity

第12頁 1250819 五、發明說明(8) 子從奈米碳管1 6頂端”拔出"之作用, 作用’即奈米碳管1 6發射出之電子2 0 作用’聚焦於螢光層1 9之中央,打到 小’從而實現電子正確、精准之轟擊 現較南解析度之平面顯示。 為進一步瞭解本發明得到之場發 構、貫現電子束聚焦之原理以及其他 5羊細描述。 請參見第七圖,係本發明場發射 理不意圖。為便於說明,本實施例僅 射=電子作說明,實際上栅極1 4兩側 之奈米碳管,它們發射之電子受到之 似。基本上’奈米碳管1 6發射出來之 為四類,即外部電子21、内部電子22 被反射之電子2 4。所謂外部電子2 1即 離中央柵極14之電子,這類電子受栅 :栅極之中心位置偏轉,最後聚焦到 ,之位置,這個距離R比現有技術沒 束打到螢光屏i 9之位 ^ ^ 〇〇 ^ 罝C圖中虛線表7Ϊ 電子2 2係發射時之初 初始方向偏向中央 =場作用更進—步偏#、卻沒有 概極14之電子,這類 碳管16之另一側之 取f :打到 螢光屏19之位置更靠近螢光屏19之中 還起到聚焦電子束之 文中央之栅極1 4電場 螢光屏19上之斑點變 於所需位置,可以實 射顯示器之具體結 特點,下面作進一步 顯示器發射電子之原 對根奈米碳管1 6發 分別存在許多根這樣 作用及運行軌道類 電子受電場作用可分 、被截獲之電子23及 發射時之初始方向偏 極14之電場作用向中 相距螢光層1 9中心距 有中央柵極14時電子 τ)更靠近中心。内部 之柵極1 4,並受柵極 偏轉打到絕緣層1 3或 螢光層1 9相對於奈米 置比外部電子21打到 心’即小於距離R。Page 12 1250819 V. Description of the invention (8) The role of the sub-extraction from the top of the carbon nanotubes 1 6 , the role of the electrons emitted by the carbon nanotubes 16 is focused on the phosphor layer In the center of 1 9 , hit the small 'to achieve electronic correct, accurate bombardment is now more flat display of the south resolution. To further understand the field of the invention, the principle of electron beam focusing and other 5 sheep description Referring to the seventh figure, the field emission of the present invention is not intended. For convenience of explanation, the embodiment only emits electrons for explanation. In fact, the carbon nanotubes on both sides of the gate 14 are exposed to electrons. Basically, 'nano carbon nanotubes 16 are emitted into four types, that is, external electrons 21, and electrons 22 whose internal electrons 22 are reflected. The so-called external electrons 2 1 are electrons from the central grid 14 and such electrons. The receiving grid: the center position of the grid is deflected, and finally the focus is at the position. This distance R is not in the position of the fluorescent screen i 9 in the prior art. ^ ^ 〇〇^ 罝C in the dotted line table 7Ϊ electronic 2 2 series At the beginning of the launch, the initial direction is biased towards the center = the field is more advanced - Step #, but there is no electron of the extreme 14, the other side of the carbon tube 16 f: hit the screen 19 closer to the screen 19 and also focus on the center of the electron beam The spot on the electric field fluorescent screen 19 of the gate 14 is changed to a desired position, and the specific characteristics of the display can be real-time. The following is a further display of electrons emitted from the original pair of root carbon nanotubes. The action and the orbital electrons are divided by the electric field, the intercepted electrons 23 and the electric field of the initial direction of the polarizer 14 at the time of the emission are closer to the center of the phosphor layer 19 when the central gate 14 is at the center of the electron τ) The inner gate is 14 and is deflected by the gate to the insulating layer 13 or the phosphor layer 19 is opposite to the nanometer than the external electron 21 hits the heart 'ie less than the distance R.

第13頁 1250819Page 13 1250819

破戴獲之電子23及内部電子22相類,也係偏轉到中央之 柵極14,、但由於偏轉之角度較大,直接打在柵極“,被柵 亟14載獲,不能打在螢光層19上。而偏轉更大之電子即被 反射之電子24,這類電子偏轉角度最A,直接偏轉打在絕 ,層13上,被絕緣層13反射後聚焦到螢光層19之中央處。 從上面之分析可以看出,最終打到螢光層丨9之電子 寬度為2R。 由於柵極14之特殊位置以及本發明場發射顯示器之結 構,決定了本發明對上述四類電子具有良好之聚焦功能, 大部分之電子均可聚焦到螢光層19之中央區域,打在邊緣 區域之電子相對較少。另外,通過調節柵極丨4及陽極丨8之 電壓,即加強中央之柵極1 4對電子束之作用,削弱陽極i 8 對電子束之作用,還可進一步調節電子之聚焦效果。因 此,可以增大柵極1 4之電壓,或降低陽極1 8之電壓來達到 目的,也可以增大柵極14及陽極18之距離來實現這個目 的。另外,增加中央之栅極1 4之厚度,則其截獲大角度偏 轉電子23之能力越強。 上述實施例之絕緣層1 3呈楔形,底面寬度較大,頂面 寬度較小。栅極1 4之形狀也呈楔形,底面之寬度與絕緣層 1 3頂面寬度相同,而柵極1 4之頂面寬度最小。當然,柵極 1 4之形狀也可以係長方體形或其他合適之形狀。 請一併參見第八圖、第九圖及第十圖,本發明之場發 射顯示器還可以採用非楔形、其他不同形狀之絕緣層及栅 極結構。第八圖採用之絕緣層4 3之截面係長方形,絕緣層The worn-out electronic 23 and the internal electronic 22 are similarly deflected to the central gate 14, but due to the large angle of deflection, they are directly hit at the gate, and are captured by the grid 14 and cannot be fired. On the optical layer 19, the electrons that are deflected more are the reflected electrons 24, and the electrons are deflected at the most A, directly deflected on the layer 13, and are reflected by the insulating layer 13 and focused to the center of the phosphor layer 19. From the above analysis, it can be seen that the electron width finally hitting the phosphor layer 9 is 2R. Due to the special position of the gate 14 and the structure of the field emission display of the present invention, it is determined that the present invention has the above four types of electrons. With good focusing function, most of the electrons can be focused to the central area of the phosphor layer 19. The electrons in the edge area are relatively small. In addition, by adjusting the voltage of the gate 丨4 and the anode 丨8, the center is strengthened. The action of the gate 14 on the electron beam weakens the effect of the anode i 8 on the electron beam, and can further adjust the focusing effect of the electron. Therefore, the voltage of the gate 14 can be increased, or the voltage of the anode 18 can be lowered to reach Purpose, can also increase The distance between the pole 14 and the anode 18 is achieved. Further, by increasing the thickness of the central gate 14 4, the ability to intercept the electrons 23 at a large angle is stronger. The insulating layer 13 of the above embodiment has a wedge shape and a bottom width. Larger, the top surface width is smaller. The shape of the gate 14 is also wedge-shaped, the width of the bottom surface is the same as the width of the top surface of the insulating layer 13, and the top surface width of the gate 14 is the smallest. Of course, the gate 14 The shape may also be a rectangular parallelepiped shape or other suitable shape. Please refer to the eighth, ninth and tenth views together, the field emission display of the invention can also adopt non-wedge, other different shapes of insulation layer and gate structure. The eighth figure uses an insulating layer 4 3 with a rectangular cross section and an insulating layer.

1250819 五、發明說明(10) 43之寬度與柵極44相同,奈米碳管46分佈於兩側。第九圖 採用之絕緣層5 3之截面也係長方形,但其寬度比柵極5 4 小,奈米碳管5 6分佈於栅極5 4兩侧。第十圖採用之絕緣層 6 6之截面係上下兩端寬度較大、中間寬度逐漸減小之形 狀,奈米碳管6 6位於栅極6 4下方兩側。上述結構之變化, 會導致發射之電子束之運動軌道與上述楔形結構有所不 同,但並未脫離本發明之範圍。1250819 V. DESCRIPTION OF THE INVENTION (10) The width of 43 is the same as that of the gate 44, and the carbon nanotubes 46 are distributed on both sides. The insulating layer 5 3 has a rectangular cross section, but has a smaller width than the gate 504, and the carbon nanotubes 56 are distributed on both sides of the gate 504. The insulating layer of the sixth embodiment has a shape in which the upper and lower ends are wide and the intermediate width is gradually reduced, and the carbon nanotubes 6 6 are located on both sides of the lower side of the grid 64. Variations in the above structure may result in differences in the orbit of the emitted electron beam from the wedge structure described above without departing from the scope of the invention.

綜上所述,本發明確已符合發明專利之要件,遂依法 提出專利申請。惟,以上所述者僅為本發明之較佳實施 例,自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化,皆 應涵蓋於以下申請專利範圍内。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the present invention are intended to be included within the scope of the following claims.

第15頁 1250819 圖式簡單說明 第一圖至第六圖係本發明場發射顯示器製備方法實施例 之各步驟示意圖。 第七圖係本發明方法製備得到之場發射顯示器之發射電 子原理示意圖。 第八圖至第十圖係本發明採用之不同形狀結構絕緣層之 示意圖。 第十一圖係現有技術三極型場發射顯示器之結構及電子 發射示意圖。Page 15 1250819 BRIEF DESCRIPTION OF THE DRAWINGS The first to sixth figures are schematic diagrams of the steps of an embodiment of a method of fabricating a field emission display of the present invention. The seventh figure is a schematic diagram of the emission electron principle of the field emission display prepared by the method of the present invention. The eighth to tenth drawings are schematic views of insulating layers of different shapes and structures employed in the present invention. The eleventh figure is a schematic diagram of the structure and electron emission of a prior art three-pole field emission display.

第十二圖係美國專利第6, 445, 1 2 4號揭露之場發射裝置 結構不意圖。 【主要元件符號說明】 場發射顯示器 1 玻璃基底 10 光刻膠 11 陰極 12 絕緣層 奈米碳管 玻璃板 螢光層 13, 43, 53, 63 柵極 14, 43, 53, 63 16,46,56,66 側壁 15 17 19 陽極 18 電子20 , 21 , 22 , 23 , 24The twelfth figure is a structure of a field emission device disclosed in U.S. Patent No. 6,445,124. [Main component symbol description] Field emission display 1 Glass substrate 10 Photoresist 11 Cathode 12 Insulation layer Carbon nanotube glass plate Fluorescent layer 13, 43, 53, 63 Gate 14, 14, 53, 63 16,46, 56,66 Sidewall 15 17 19 Anode 18 Electronics 20 , 21 , 22 , 23 , 24

第16頁Page 16

Claims (1)

12508191250819 、申請專利範圍 種場發射顯示器之製備方法’包括下列步驟: 步驟一,將奈米碳管分佈於絕緣基底表面形成之導 電陰極層上; 步驟二,於導電陰極層上正交形成絕緣層; 步驟三,於所述絕緣層上形成導電柵極; 步驟四,使分佈於所述導電柵極兩側之導電陰極層 上之奈米碳管直立於所述導電陰極層上;及 步驟五,封裝螢光屏及密封側壁。 2 ·如申請專利範圍第1項所述之場發射顯示器之製備方 法,其中所述步驟一包括下列分步驟··將奈米唉管裝 料直接塗覆於製備好之絕緣基底表面之導電陰極層表 面。 3 ·如申請專利範圍第1項所述之場發射顯示器之製備方 法,其中所述步驟一包括下列分步驟: 於絕緣基底表面製備形成親水之導電陰極層; 於纟巴緣基底表面塗覆一層疏水之光刻膠,並用光刻 工藝去除導電陰極層表面之光刻膠; 配製奈米碳管溶液備用; 將上述處理好之絕緣基底浸入配製好之奈米碳管溶 液中’使得奈米碳管枯附於親水之導電陰極層表面; 洗去剩餘之光刻膠。 4 ·如申請專利範圍第1項所述之場發射顯示器之製備方 法’其中所述奈米;e炭管之長度小於絕緣層之厚度。 5.如申請專利範圍第1項所述之場發射顯示器之製備方The method for preparing a patent field emission field display includes the following steps: Step 1: distributing a carbon nanotube on a conductive cathode layer formed on the surface of the insulating substrate; Step 2, forming an insulating layer orthogonally on the conductive cathode layer; Step 3, forming a conductive gate on the insulating layer; Step 4, arranging a carbon nanotube disposed on the conductive cathode layer on both sides of the conductive gate on the conductive cathode layer; and step 5, Encloses the phosphor screen and seals the sidewalls. 2. The method for preparing a field emission display according to claim 1, wherein the step 1 comprises the following substeps: directly applying the nano tube charge to the conductive cathode on the surface of the prepared insulating substrate Layer surface. 3. The method for preparing a field emission display according to claim 1, wherein the step 1 comprises the following sub-steps: preparing a hydrophilic conductive cathode layer on the surface of the insulating substrate; coating a layer on the surface of the base of the ribbed edge a hydrophobic photoresist, and removing the photoresist on the surface of the conductive cathode layer by photolithography; preparing a carbon nanotube solution for use; immersing the above-mentioned treated insulating substrate in the prepared carbon nanotube solution to make the nanocarbon The tube is attached to the surface of the hydrophilic conductive cathode layer; the remaining photoresist is washed away. 4. The method of preparing a field emission display according to claim 1, wherein the length of the carbon nanotube is less than the thickness of the insulating layer. 5. The preparation method of the field emission display as described in claim 1 of the patent application scope 第17頁 1250819 六、申請專利範圍 法’其中所述絕緣層係破璃材 6.如申請專利範圍第5項所述之場 衣成。 法,其中所述絕緣層係利用絲X £ ”'、員不器之製備方 於絕緣層表面,再經過燒結形成卩刷法將玻璃槳料印 7·如申請專利範圍第丨項所述之身 法,其中所述絕緣層麵備方 觸之底面寬度最大,與栅極接觸之頂一 v %陰極層接 8.如申請專利範圍第!項所述之場發射孽干面哭寬度制最小。 法,其中所述絕緣層係長條形。、时之衣備方 9·如申請專利範圍第1項所述之場發射顯示哭之 法,其中所述導電柵極係通過絲網印 於絕緣層頂端,再經過燒結形成。 、、水料印 I 0 ·如申請專利範圍第i項所述之場發射顯示器之製備方 法,其中所述步驟四包括下列分步驟: 衣 用枯性膠帶貼於導電陰極層表面,拉起膠帶將原來 倒伏在導電陰極層表面之奈米碳管直立於導電陰極声 表面。 曰 II ·如申請專利範圍第1項所述之場發射顯示器之製備方 法,其中步驟四包括下列分步驟: 產生強電場作用於所述奈米碳管,使得奈米碳管於 電場作用下直立於導電陰極層表面。 1 2 ·如申請專利範圍第1項所述之場發射顯示器之製備方 法,其中導電陰極層包括一導電薄膜。 1 3.如申請專利範圍第1 2項所述之場發射顯示器之製備方 第18頁 1250819 六、申請專利範圍 法,其中所述導電薄膜包括ΙΤ0導電膜。 1 4.如申請專利範圍第1項所述之場發射顯示器之製備方 法,其中所述螢光屏包括透明基板、陽極及螢光層。Page 17 1250819 VI. Scope of Application for Patent Law 'The insulating layer is a broken glass material. 6. The clothing as described in item 5 of the patent application scope. The method, wherein the insulating layer is printed on the surface of the insulating layer by using a wire X £"", and then the sintered glass is formed by a squeegee method, as described in the scope of the patent application. In the body method, the width of the bottom surface of the insulating layer is the largest, and the top of the contact with the gate is a v% cathode layer. 8. The field emission as described in the scope of the patent application is the smallest. The method wherein the insulating layer is elongated, and the field emission method according to the first aspect of the invention is the method of crying, wherein the conductive gate is printed on the insulating layer through a screen. The top end is further formed by sintering. The water-based printing I 0 is the preparation method of the field emission display according to the invention of claim 1, wherein the step 4 includes the following sub-steps: the clothing is coated with a dry tape and is electrically conductive. On the surface of the cathode layer, the tape is pulled up to stand on the surface of the conductive cathode layer and the carbon nanotubes are erected on the surface of the conductive cathode. 曰II · The method for preparing the field emission display according to claim 1, wherein step four include The following sub-steps: generating a strong electric field acting on the carbon nanotubes, so that the carbon nanotubes stand upright on the surface of the conductive cathode layer under the electric field. 1 2 · Preparation of the field emission display according to claim 1 The method, wherein the conductive cathode layer comprises a conductive film. 1 3. The method for preparing a field emission display according to claim 12, wherein the method of claim 5, wherein the conductive film comprises ΙΤ0 conductive The method of producing a field emission display according to claim 1, wherein the phosphor screen comprises a transparent substrate, an anode, and a phosphor layer. I·· 第19頁I··第19页
TW93115269A 2004-05-28 2004-05-28 Method for making a field emission display TWI250819B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93115269A TWI250819B (en) 2004-05-28 2004-05-28 Method for making a field emission display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93115269A TWI250819B (en) 2004-05-28 2004-05-28 Method for making a field emission display

Publications (2)

Publication Number Publication Date
TW200539736A TW200539736A (en) 2005-12-01
TWI250819B true TWI250819B (en) 2006-03-01

Family

ID=37433165

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93115269A TWI250819B (en) 2004-05-28 2004-05-28 Method for making a field emission display

Country Status (1)

Country Link
TW (1) TWI250819B (en)

Also Published As

Publication number Publication date
TW200539736A (en) 2005-12-01

Similar Documents

Publication Publication Date Title
JP2009518806A (en) Method for producing highly reliable CNT paste and method for producing CNT emitter
US8283861B2 (en) Field emission display
US20080139073A1 (en) Method of manufacturing fine patternable carbon nano-tube emitter with high reliability
CN105336560B (en) Reflex klystron and electron emitting device
TW201423818A (en) Field emission cathode device and field emission equipment using the same
KR100701093B1 (en) Apparatus for orientating carbon nanotube, method of orientating carbon nanotube and method of fabricating field emission display
CN100583353C (en) Method for preparing field emission display
US7764010B2 (en) Electron emission device, electron emission display apparatus having the same, and method of manufacturing the same
TWI250819B (en) Method for making a field emission display
WO2006102796A1 (en) A field emission display having multi-layer structure
Komoda et al. Fabrication of a 7.6‐in.‐diagonal prototype ballistic electron surface‐emitting display on a glass substrate
KR20060024565A (en) Field emission device and method for manufacturing the same
JP2004259577A (en) Flat-plate type image display device
CN100405523C (en) Field emission display
KR100315230B1 (en) Field emission display device and manufacturing method of the same
TWI332228B (en) Field emission display device
KR100784997B1 (en) Method of manufacturing electron emission device, electron emission device prepared using the method, and backlight unit and electron emission display device adopting the electron emission device
KR100284539B1 (en) KAIST Field Emitter Display
TWI329337B (en) Field emission display
CN100555535C (en) The flat-panel monitor and the manufacture craft thereof that have knot type field effect tube cathodic control array structure
KR100907921B1 (en) Field emission device based on zinc oxide nanowire array
KR100436774B1 (en) Method of manufacturing a field emission display
KR100556744B1 (en) Carbon nanotube field emission device and manufacturing method thereof
KR100556746B1 (en) Field emission device
Choi Nested cathode structure in field emission displays