1248147 13190twf.doc 九、發明說明： 【發明所屬之技術領域】 本叙明疋有關於一種清除元件表面助焊劑的方法及 應用此方法之凸塊製程，且特別是有關於一種使用甲基磺 酸(Methyl sulfonic Acid，MSA)清除元件表面助焊劑的方法 及應用此方法之凸塊製程。 【先前技術】 在高度情報化社會的今日，多媒體應用的市場不斷地 急速擴張著。積體電路封裝技術亦需配合電子裝置的數位 化、網路化、區域連接化以及使用人性化的趨勢發展。為 達成上述的要求，必須強化電子元件的高速處理化、多功 能化、積集化、小型輕量化及低價化等多方面的要求，於 是積體電路封裝技術也跟著朝向微型化、高密度化發展。 在各種封裝技術中，球格陣列式封裝（Ball Grid Array package，BGA package)、覆晶構裝(Flip chip package, f/c package)與其他採用凸塊(bump)或焊球(s〇Wer bdi)進行電 性連接之高贿積體電路封裝技術，纟於可脑配線長度 亚進而提昇訊號傳遞速度，因此已漸成為高密度封裝的主 流。 在習知以凸塊或焊球進行電性連接之封裝技術中，係 於晶圓（Wafer)或承載器（earner)之表面上形成多個焊料 塊’並於焊料塊上賴助焊劑(flux)或將其直接混合於焊料 塊内:以協助清潔並去除焊料塊以及晶圓或承載器表面鲜 墊之氧化物，使得經迴焊成型之凸塊與晶圓之間或焊球與 1248147 J90twf.doc 承載:,間!:有較佳的電性連接。 發生助谭“ 中在最後清除助焊_步驟時，常會 連接效果，面r焊劑將降低凸塊或焊球的電性 【發明内容】低物㈣之㈣及完成品之使用壽命。 本表明的目的就是在提供 除凸塊上所殘留之助烊劑。 雜徹底清 本發明的再一目的是提供 的方法，適於徹底、、主咚主裡巧丨示兀件表面助垾劑 本發明的1曰表面上所殘留之助焊劑。 於徹底清除助焊劑。的疋提供—種清除助痒劑的方法適 匕衣征巴枯卜面各步驟。（A1# 藝上⑽ΓΓ具有多個焊墊。（A2)形成多個谭料塊射 墊上。（A3)賀邋一助焊劑於晶圓盥 、 料塊以形成多個凸塊於科上^用莫_迴蟬^ 谭劑。 上（A5)使用甲基石黃酸清除段 在本實施例中，使用甲基碏酸清除 包括下面各步驟。（B1)對晶圓執行之方法例如 此外，迴焊職塊料除料敵卩 ^私序。 割晶圓以形成多個“。此時 $更包括切 之方法例如包括下面各步驟。二:片:=!劑 浸泡程序w錢行，程序。（C3)== 供一晶圓 本發明提出-種凸塊製程，包括 晶圓，晶圓具有多個㈣為（ai)提 1248147 13l90twf.d〇c 一乾燥程序。 外’ f述之沖洗程序例如係使用去離子挪 進仃沖洗。前叙乾_序勤係❹-離心穿置 ==烤裝置航賴。清除师織例如 焊 本毛明又提出-種清除元件表面助焊劑的方法 ::各=。_提供一元件。元件具有-基板與多個焊 、〒料塊配置於基板之表面。（D2)對元件執行二甲其 =酸浸泡程序。（D3)對元件執行—沖洗料。㈣對元二 執行一乾燥程序。 在本實施例巾，基板例如係晶圓、印刷電路板(ρπ_ c_lt Board, PCB)、導線架（lead frame)或陶究基板 (Cerate substrate)。沖洗程序例如係使用去離子水進行沖 洗。乾燥程序例如係使用一離心裝置或一烘烤裝置進行乾 燥0 乙 本發明再提出一種清除助焊劑的方法，其係使一物件 上所殘留之助焊劑接觸甲基磺酸，以清除物件上所殘留之 助焊劑。 綜上所述，在本發明之清除元件表面助焊劑的方法及 應用此方法之凸塊製程中，可獲得極佳的助焊劑清除效果。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 1248147 13190twf.doc 本發明係提出一種清除助焊劑的方法，主要係使一物 件上所殘留之助焊劑接觸甲基石黃酸，並 除物件上所殘留之助焊劑。由於甲基續酸對,=: 1具有—定程度的賴性，因此在以甲基續酸清除助 焊劑日寸’曱基石黃酸將腐钱凸塊、焊5求或任何焊料塊之表面， 並將殘留於表面上的助焊劑一併清除。所以，用甲基石备酸 之清洗液，可較習知利用其他清洗液清；助焊 浏獲付尚出多倍的清潔效果。 圖1繪示為本發明—較佳實施例之凸塊製程的流程 圖。 。明$圖1 ’此凸塊製程係先提供一晶圓（步驟S10)。 晶圓具θ有多個焊墊。接著形成多個焊料塊於焊墊上(步驟 S20)。焊料塊例如係以印刷(stendl 或電卿adng) 的方式形成，其材質可以是絲焊料或無錯焊d也e 接著喷灑—料劑於晶圓與焊料塊上（步驟 二二i，助焊劑亦可直接混合於焊料塊内。助焊劑例 如係由权曰（rosln)、膠料、活性劑、及其他溶劑所 形成凸塊的過程中發生氧化。接著 迴知知科塊以形成多個凸塊於焊墊上（步驟S40)。 詩f基顧雜助㈣。轉細步驟例如係 同形成於其上方之凸塊一同浸泡至 if曰曰®連 維持一段適當_後取出。接著對 驟⑽相如使用去離子水地t洗凸塊與3 1248147 13190twf.doc == 曰圓執行一乾燥程序(步驟S46a)，例如將晶圓連同 、上方之凸塊置人—離心裝置中’並利用離心力將 : 上面的去離子水脫除，或者將晶圓連同形成於其上 面= = 置中’並利用高溫供烤將殘留在上 (步驟或st在步驟S 4 〇後，例如切割晶圓以形成多個晶片 S4 T )。接者對晶片執行一曱基磺酸浸泡程序(步驟 )° :、、、、後對晶片執行一沖洗程序(步驟s 片執行-乾燥程序(步驟亀）。1中，步驟 s规之細節係與步驟S42a至步驟大致相同。 由於劑後’例如更對凸塊進行迴焊(步驟聊 沈，因此：：石"酸來清除助焊劑後’凸塊表面將略顯暗 凸塊可對凸塊進行迴焊，讀得具有較平滑之表面的 劍之發明一較佳實施例之— 〜元:二、?、圖2 ’此清除元件表面助焊細方法係先提供 配置於基兀件具有—基板與多個烊料塊，焊料塊 圓上之2:Γΐ::Γ之元件例如包括晶圓及配置於晶 置於其上之乂二卩刷電路板、導線架或喊基板及配 驟S70)。接y ° f f 70件執行—Ψ基魏浸泡程序(步 元件執^對;^執行—沖洗程序(步驟S80)。接著對 焊劑上二乾_(步驟科即大致完成元件表面之助 1248147 13190twf.doc “上所述’在本發明之清除元件表面助焊劑的 :观：法之凸塊製程中’係以甲基磺酸做為 之、主 t!° t/g應_封裝測試廠之凸塊製程後， 獲付9 8 .產品良率’相對於f知僅有 =可 言，可說是獲得了突破性的良率增進。 ；座°°良率而 雖然本發明已以較佳實施例^露如上 限定本發明，任何熟習此技藝者^亚非用以 範圍當視_之巾請專利範_界定柄明之保護 【圖式簡單說明】 I° 圖。圖1料為本發明-錄實施例^妙程的⑭ 圖2繪示為本發明一較佳實施例之清除 劑之方法的流程圖。 牛表面助埤 【主要元件符號說明】 S10〜S90 :步驟1248147 13190twf.doc IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for removing surface flux of a component and a bump process using the same, and in particular to a use of methanesulfonic acid (Methyl sulfonic acid, MSA) A method of removing component surface flux and a bump process using the same. [Prior Art] In today's highly information society, the market for multimedia applications is rapidly expanding. Integral circuit packaging technology also needs to cooperate with the digitalization, networking, regional connectivity and user-friendly trend of electronic devices. In order to achieve the above requirements, it is necessary to strengthen the requirements for high-speed processing, multi-function, integration, small size, light weight, and low cost of electronic components. Therefore, the integrated circuit packaging technology is also oriented toward miniaturization and high density. Development. Among various packaging technologies, Ball Grid Array package (BGA package), Flip chip package (f/c package) and other bumps or solder balls (s〇Wer) Bdi) The high-density circuit packaging technology for electrical connection has become the mainstream of high-density packaging because it can increase the signal transmission speed and increase the signal transmission speed. In a conventional packaging technique in which a bump or a solder ball is electrically connected, a plurality of solder bumps are formed on a surface of a wafer or an edge, and a flux is applied to the solder bump (flux) Or directly mix it into the solder bumps: to assist in cleaning and removing the solder bumps and oxides on the wafer or the surface of the carrier, such that between the bumps and the wafers or between the solder balls and the solder balls and 1248147 J90twf .doc Bearer:, between!: There is a better electrical connection. In the event of the help of the Tan, the connection effect is often eliminated, and the surface r flux will reduce the electrical properties of the bump or the solder ball. [Inventive content] Low (4) (4) and the service life of the finished product. The purpose is to provide a co-canning agent remaining on the bumps. A further object of the present invention is to provide a method suitable for thoroughly, in the main body, to show the surface aid of the article. 1) Remaining flux on the surface. Thoroughly remove the flux. The method of removing the itch agent is suitable for each step of the smear. (A1# 艺上(10)ΓΓ has multiple pads. (A2) Forming a plurality of tan block shot pads. (A3) Use a flux on the wafer 盥, block to form a plurality of bumps on the board ^ use Mo _ 蝉 蝉 ^ Tan agent. Use (A5) Methyl Rhein Acid Scavenging Section In this embodiment, the use of methyl decanoic acid scavenging includes the following steps. (B1) A method of performing on a wafer, for example, in addition, a reflow soldering block material is removed from the enemy 卩^ private order. The wafer is formed into a plurality of ". At this time, the $including the cutting method includes, for example, the following steps. : Film: =! Agent soaking program w money line, program. (C3) == For a wafer proposed by the present invention - a bump process, including wafers, wafers having multiple (four) for (ai) mention 1248147 13l90twf. D〇c A drying procedure. The external flu process is, for example, using deionization and rinsing. Pre-drying _ sequencing system 离心-centrifugal wear == roasting device voyage. Ming also proposed a method for removing the surface flux of the component: each =. _ provides a component. The component has a substrate and a plurality of soldering and soldering blocks disposed on the surface of the substrate. (D2) Performing a component on the component Acid soaking process. (D3) Performing on the component-flushing material. (4) Performing a drying process on the element 2. In the embodiment, the substrate, such as a wafer, a printed circuit board (pπ_c_lt Board, PCB), a lead frame (lead) Frame) or a ceramic substrate (Cerate substrate). The rinsing process is performed, for example, by using deionized water. The drying process is performed, for example, by using a centrifugal device or a baking device. The present invention further provides a method for removing flux. It is used to connect the flux remaining on an object. Methanesulfonic acid to remove the flux remaining on the article. In summary, in the method for cleaning the surface of the component flux of the present invention and the bump process using the method, an excellent flux removal effect can be obtained. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the preferred embodiments of the invention. A method for removing the flux is proposed, which mainly involves contacting the flux remaining on an object with methyllithic acid and removing the flux remaining on the object. Since the methyl acid continues to be acid, =: 1 has a certain The degree of dependence, so in the use of methyl acid to remove the flux, the amount of 曱 石 石 黄 黄 将 将 凸 凸 凸 凸 、 、 、 、 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸 凸. Therefore, the use of methyl stone acid cleaning solution can be better than other cleaning solutions; the flux is more than double the cleaning effect. 1 is a flow chart showing a bump process of the preferred embodiment of the present invention. . Fig. 1 ' This bump process first provides a wafer (step S10). The wafer has a plurality of pads θ. A plurality of solder bumps are then formed on the pads (step S20). The solder bump is formed, for example, by printing (stendl or singular adng), and the material may be solder or solder-free soldering, and then spraying the material onto the wafer and the solder bump (step 2nd, i. The flux may also be directly mixed in the solder bump. The flux is oxidized, for example, during the process of forming bumps formed by rosln, a compound, an active agent, and other solvents. The bump is on the solder pad (step S40). The poem is based on the hybrid (4). The step of turning down is, for example, soaked together with the bump formed above it to the if曰曰® to maintain a proper period of time. Then, the step (10) For example, using deionized water to wash the bumps and 3 1248147 13190twf.doc == 曰 circle to perform a drying process (step S46a), for example, placing the wafer together with the upper bumps in the centrifuge - and using centrifugal force Will: remove the deionized water above, or place the wafer on top of it = = and use the high temperature for baking to remain on (step or st after step S 4 ,, for example, dicing the wafer to form a plurality of wafers S4 T ). The receiver performs a sulfonation on the wafer The acid immersion program (step) ° :, , , and then perform a rinsing process on the wafer (step s chip execution - drying process (step 亀). In 1, the details of the step s are substantially the same as steps S42a to s. After the agent, for example, the bumps are reflowed (steps are so heavy, therefore:: stone " acid to remove the flux after the bump surface will be slightly dark bumps can be reflowed to the bumps, read more A preferred embodiment of the smoothed surface of the sword - ~ yuan: two, ?, Figure 2 'this cleaning element surface soldering fine method is first provided in the base element has a substrate and a plurality of blocks, 2 on the solder bump circle: Γΐ:: Γ components include, for example, a wafer and a 电路2 卩 电路 电路 、 、 、 及 及 及 及 及 及 及 及 及 及Execution - Ψ 魏 Wei immersion procedure (step element ^ ^; ^ execution - rinsing procedure (step S80). Then on the flux on the second dry _ (step section is roughly completed component surface help 1248147 13190twf.doc "described above" In the surface of the cleaning element of the cleaning device of the present invention: in the process of the bump process, the system is methyl Sulfonic acid is used as the main t! ° t / g should be _ package test factory bump process, paid 98. Product yield 'relative to f know only = at all, can be said to have achieved breakthrough The yield is improved. The seating temperature is good. Although the present invention has been described above with reference to the preferred embodiment, the skilled person is skilled in the art. The protection of the present invention [simplified description of the drawings] I° diagram. Figure 1 is a flow chart of the present invention - a recording example of the invention. Figure 2 is a flow chart showing the method of the scavenger according to a preferred embodiment of the present invention.埤 [Main component symbol description] S10~S90: Step