1246201 九、發明說明： 【發明所屬之技術領域】 本案係為一種導體接合方法及應用其中的錫金焊料結 構，尤指應用於光電晶體與基座間之導體接合方法及應用 其中的錫金焊料結構。 【先前技術】 請參見第一圖(a)(b)，其係將雷射二極體u構裝在基 座(submount)lO上之一構造示意圖，其中雷射二極體u上 具有以金(Au)與其它金屬（例如錫、鈦、鉑及鉻)所共同構 成之合金來完成之電極H0，而基座1〇之表面上則形成有 一電極層100,該電極層100通常以金與其它金屬（例如 錫、鈦、鉑及鉻)所共同構成之合金來完成，該電極層100 具有一構裝區1000與接線區1001，構裝區1000可供a雷射 二極體11進行黏著，而接線區1001則提供進行後續打線 作業之所需。而在電極110與構裝區1000之間，吾人通常 需提供一焊料(s〇lder)i2來進行雷射二極體n與基座1〇兩 者間之接合。 而為達低污染及無鉛化的目的，上述焊料12現今大都 以^金合金來完成，關於錫金合金之混合比與炫點I曲線 圖睛見第二圖所示，而目前應用於上述接合焊料之錫金合 金成份大多為兩種比例，第一種是金：錫重量比例為如：2〇 1246201 之共晶合金(eutectic alloy)，其熔點為攝氏278度，在與雷 射一極體11上之金(Au)電極110進行迴焊(reflow)時，因 錫成份少而使其接著速度慢，導致加工時間過長，但完成 後之凝固狀態會形成均質的微觀接合結構以及極高比例的1246201 IX. Description of the invention: [Technical field to which the invention belongs] This case is a conductor bonding method and a tin-gold solder structure used therein, especially a method for bonding a conductor between a photovoltaic crystal and a base and a tin-gold solder structure therein. [Prior art] Please refer to the first figure (a) (b), which is a schematic diagram of a structure in which a laser diode u is mounted on a submount 10, where the laser diode u has a The electrode H0 is an alloy composed of gold (Au) and other metals (such as tin, titanium, platinum, and chromium), and an electrode layer 100 is formed on the surface of the base 10, and the electrode layer 100 is usually made of gold. This electrode layer 100 has an alloy composed of other metals (such as tin, titanium, platinum, and chromium). The electrode layer 100 has a structured area 1000 and a wiring area 1001. The structured area 1000 can be used for a laser diode 11. Adhesive, and the wiring area 1001 is provided for subsequent wiring operations. Between the electrode 110 and the structure area 1000, we usually need to provide a solder i2 for bonding between the laser diode n and the base 10. For the purpose of low pollution and lead-free, most of the above solders 12 are now made of gold alloy. The mixing ratio of tin-gold alloy and the dazzle point I curve are shown in the second figure, and are currently used in the above-mentioned bonding solder. The composition of tin-gold alloys is mostly two ratios. The first is gold: tin eutectic alloy with a weight ratio of 201246201. Its melting point is 278 degrees Celsius. When gold (Au) electrode 110 is reflowed, the soldering speed is slow due to the small tin composition, which results in excessive processing time, but the solidified state after completion will form a homogeneous micro-joint structure and a very high proportion of
Ai^Sn 之富金介金屬（Au-rich intermetallic compound)—或 AuSn，而此類介金屬之強度高而使其產品可靠度較佳。而 另外一種比例則是金:錫重量比例為70: 30或75: 25，其炫 點約在攝氏380度至350度左右，在與雷射二極體u上之 金電極110進行接著時，因錫成份多而使其接著速度快， 可使加工時間縮短，但完成後之凝固狀態為非均質的接合 結構以及較高比例的AuSri2與AuSrl4之富錫介金屬(Sn_rich mteraietallic compound)，而富錫介金屬為脆性材料其強产 低，這些富錫介金屬在元件長期使用下會逐漸遷移^焊^ 介面並且形成一易脆之連續層，使其產品可靠度下降。… 如何改善上述習用錫金合金所完成焊料之缺失， =Ai ^ Sn Au-rich intermetallic compound—or AuSn, and the high strength of this type of intermetallic make its products more reliable. The other ratio is gold: tin weight ratio of 70:30 or 75:25, and its dazzling point is about 380 degrees to 350 degrees Celsius. When bonding with the gold electrode 110 on the laser diode u, Due to the large amount of tin, the bonding speed is fast, which can shorten the processing time, but the solidified state after completion is a heterogeneous bonding structure and a high proportion of Au_Sri2 and AuSrl4 ’s Sn_rich mteraietallic compounds. Tin-metal is a brittle material with low strength. These tin-rich metals will gradually migrate ^ soldering ^ interface and form a brittle continuous layer under long-term use of components, which reduces the reliability of the product. … How to improve the lack of soldering done by the conventional tin-gold alloy, =
本案最主要之目的。 ♦、、、X X 【發明内容】 尽荼係為一種錫金焊料結構，應用於— 曰 基座之間，該錫金焊料結構包含：_主體a，:曰體與 座之表面上方；以及-接著層’形成於該主體層上=亥 以接著至該光電晶體，其中該接著層之金锡重二， 该主體層之金錫重量比例，而該接著斧 例小 予度小於該主 1246201 層之厚度。 根據上述構想，本案所述之錫金焊料結構，其中該主 體層與接著層係以用蒸鍍、濺鍍或電鍍中一種方式形成於 該基座之表面上方。 、 —根據上述構想，本案所述之錫金焊料結構，其中該接 者層:為AuSn，AuSii2與ΛΑ之各種介金屬混合而成， 雜者層之金錫重量比例小於触體層之錢重量比例， 而该主體層之金錫重量比例可為8〇:2〇。 #根據上述構想，本案所述之錫金谭料結構， 著層之厚度可控制在1至2微乎，而笨 ’、w妾 制在0.2微米。 I卡而5亥接者層之厚度則控 體’本案所述之錫金谭料結構，其中該主 錫il 支撐層，其金錫重量比例與接著層之金 二例她’其厚度小於其上下之該主體層厚度。 電曰體方面係為—種導體接合方法，應用於一光 二體”-基朗，其包含下列步驟：於 :金=，錫金焊料結構包含—主體層以及= 量 比例小於該主體展 窃 該主體層之厚重1比例，該接著層之厚度小於 然後將觸金㈣ ~ =者層上， 溫度進行接合。 /按者層坏枓之迴焊(reflow) 根據上述構想，本案 體層與接著層係 验接口方去，其中該主 '、讀、频或麵巾―種方式形成於 :偏二該主體層上方，而該接著層之金錫重 1246201 該基座之表面上方。 根據上述構想’本案所述之導體接合方法，其_接著 層可為AuSn ’ AuSn2與A11S114之各種介金屬混合而成，节 接著層之金錫重量比例小於該主體層之金錫重量比例，而" 該主體層之金錫重量比例可為80:2〇。 根據上述構想，本案所述之導體接合方法，其中兮接 著層之厚度可控制在1至2微米，而該接著層之厚 制在0.2微米。 " 根據上述構想，本案所述之導體接合方法，其中該主 體層中更包含有-支縣，其金錫重量比例與接著層=入 錫重量比例相似，其厚度小於其上下之該主體層厚^。至 本案之再-方面係為一種錫金焊料結構，應用^一 電晶體與-基紅間，_金焊料結構包含： 形成於該光電晶體之表面上方； 旦比^ 該基座，其巾該接著層之金錫重 ^例小於社體層之金㈣量比例， 小於該主體層之厚度。 *有層之；度 本案之又-方面係為一種導體接合 電晶體與一基座間，應用於一先 瓜门其包含下列步驟··於該卉雷曰躲 成-錫金焊料結構1 “阳體上形 接著層，該接著層位===包含-主體層以及- 重量比例小於該主❹ 而越者層之金錫 ’之金錫重I比例，_拉 小於該主體層之厚声· 該接者層之厚度 曰又7子度，以及將該基座接觸 然後將該錫金焊料处κ 觸至。亥接者層上， 構加熱至該接著層焊料之迴焊_ow) 1246201 溫度進行接合。 【實施方式】 晴芩見第三圖，其係本案為改善上述習用技術手段所 發展出來之焊料構造之實施例示意圖，其中雷射二極體21 上具有以金與其它金屬（例如錫、鈦、麵及鉻)所共同構成 之合金來完成之電極210，而基座20之表面上則形成有一 電極層200，該電極層200通常以金與其它金屬（例如錫、 鈦、翻及鉻)所共同構成之合金來完成，該電極層200具有 一構裝區2000與接線區2001，構裝區2000可供雷射二極 體21進行黏著，而接線區2001則提供進行後續打線作業 之所需。而在電極210與構裝區2000之間，本案所提供之 焊料（s〇lder)22也是用以進行雷射二極體21與基座 (subm〇unt)20兩者間之接合。而本實施例之焊料(s〇lder)22 ，要係由兩層混合比例不同之錫金合金來完成，而可以用 羔鍍、濺鍍或電鍍等方式先形成於基座2〇之構裝區如㈨ 上丄其中靠近基座2〇之第—層為厚度較大之主體層22〇， 射—極體21之第二層為厚度較小之接著層22卜 :貝施例之主要技術特徵在於將主體層220之金錫重量 =在大於接著層功之金錫重量比例，並將主體層 之厚户^翻在切接著層221之厚度（例如主體層220 0.2微^书/亡1至2微米，而接著層221之厚度則控制在約 .”工，但不限定-定是如此），舉例來說，主體層 1246201 220之金錫重量比例可為80: 2〇,熔點約在攝氏278度，而 接著層221之錫重量比例較高（例如金錫重量比例可為 30:70，但不限定一定是如此），其熔點高於278度，。如 此一來，在進行迴焊時，接合層中因為具有較高的錫成分， 因此容易與雷射二極體之表面金快速接合，同時位於下層 的主體層220提供較高比例的金與接合層進行擴散反應。 在充分擴散後，接合層221消失並將整體焊料的金錫重量 比例拉回近80 : 20之近共晶組成⑽訂心放价 composition)，這種比例的金錫組成在降溫過程中會形成均 質的微觀接合結構以提升接合強度，並減少富錫介金屬之 生成以提高接合可靠度。因此本案可在縮短工時之際，同 日π保有了罪度，進而可改善上述習用錫金合金所完成焊料 之缺失，達成發展本案最主要之目的。 再請參見第四圖，其係本案為改善上述習用技術手段 所發展出來之焊料構造之另一實施例示意圖，其中所提供 之焊料(solder)32主要係由多層混合比例不同之錫金合金 來完成，而亦可以用蒸鍍、濺鍍或電鍍等方式先形成於基 座20之構裝區2000上。其中靠近基座2〇處設有為厚度較 大之第一主體層320與第二主體層322，在兩層主體層之 間夾著一層支撐層321，而靠近雷射二極體21處則設有厚 度較j之接者層323，而本實施例之主要技術特徵除了在 於將主體層320、322之金錫重量比例控制在大於接著層 323之金錫重量比例，並將主體層32〇、322之厚度控制在 大於接著層323之厚度之外，另外尚可多設置一支撐層 10 1246201 32卜其厚度與金錫重量比例與接著層323相仿。舉例來 說’主體層320、322之金錫重量比例為8〇: 2〇，而接著層 323與支樓層321之金錫重量比例則皆為A*，盘The main purpose of this case. ♦ ,, XX [Summary of the Invention] The system is a tin-gold solder structure, which is used between-the base, the tin-gold solder structure includes: _ the main body a, said above the surface of the body and the base; and-an adhesive layer 'Formed on the host layer = Hai to then to the optoelectronic crystal, wherein the gold and tin of the bonding layer is double, the weight ratio of gold and tin of the host layer is small, and the thickness of the bonding layer is less than the thickness of the main 1246201 layer. According to the above-mentioned concept, the tin-gold solder structure described in this case, wherein the main body layer and the adhesive layer are formed over the surface of the base by one of evaporation, sputtering or electroplating. According to the above conception, the tin-gold solder structure described in this case, wherein the joint layer is made of AuSn, AuSii2, and various intermetals of ΛΑ, and the gold-tin weight ratio of the hybrid layer is less than that of the contact layer. The weight ratio of gold and tin of the host layer may be 80:20. #According to the above-mentioned concept, the thickness of the tin-tan material described in this case can be controlled to be 1 to 2 micrometers, while the stupidity and w are controlled to 0.2 micrometers. I card, and the thickness of the 5th layer is controlled by the tin-gold material structure described in this case, where the main tin il support layer has a gold-tin weight ratio to the second layer of gold. The thickness of the body layer. The electrical body is a kind of conductor bonding method applied to one light and two bodies "-Geelong, which includes the following steps: in: gold =, tin-gold solder structure includes-the main body layer and the amount ratio is smaller than the main body to steal the main body The thickness of the layer is 1 ratio, and the thickness of the bonding layer is less than that of the contact layer. Then, the temperature is joined. / Reflow According to the above concept, the body layer and the bonding layer are inspected. The interface is to go, where the main, read, frequency or face towel is formed in two ways: above the main body layer, and the gold and tin weight of the adhesion layer is above the surface of the base of 1246201. According to the above conception, as described in this case For the conductor bonding method, the bonding layer can be a mixture of AuSn 'AuSn2 and various intermetallic metals of A11S114. The weight ratio of gold and tin in the bonding layer is less than the weight ratio of gold and tin in the main layer. The weight ratio may be 80:20. According to the above-mentioned concept, the thickness of the bonding layer in the conductor bonding method described in this case can be controlled at 1 to 2 microns, and the thickness of the bonding layer is made at 0.2 microns. &Quot; According to According to the concept, the conductor bonding method described in the present case, wherein the main body layer further includes -Zixian, the weight ratio of gold and tin is similar to the weight ratio of the bonding layer = tin, and its thickness is less than the thickness of the main body layer above and below ^. The further aspect of the present case is a tin-gold solder structure, which is applied between a transistor and a base red. The gold solder structure includes: formed above the surface of the optoelectronic crystal; denier than the base, the towel should be adhered to The gold-tin weight of the layer is less than the ratio of the amount of gold in the body layer and less than the thickness of the main layer. * There are layers; the other aspect of this case is a conductive junction between a transistor and a base, which is used in a first door It includes the following steps: · In the Hui Lei Cheng Hidden-Tin-Gold Solder Structure 1 "The bonding layer on the male body, the bonding layer === contains-the main layer and-the weight ratio is smaller than the main layer and the more The gold-tin weight I ratio of gold tin 'is less than the thick sound of the main body layer. The thickness of the connector layer is 7 degrees, and the base is contacted, and then the tin-gold solder κ is touched. On the joint layer, the structure is heated to the reflow soldering temperature of the next layer of solder (1246201) for bonding. [Embodiment] As shown in the third figure, it is a schematic diagram of an embodiment of the solder structure developed in this case to improve the conventional technical means. The laser diode 21 has gold and other metals (such as tin, titanium, etc.) on it. Electrode, surface, and chromium) to complete the electrode 210, and an electrode layer 200 is formed on the surface of the base 20. The electrode layer 200 is usually made of gold and other metals (such as tin, titanium, chromium, and chromium). The electrode layer 200 has a structured area 2000 and a wiring area 2001. The structured area 2000 can be used for the bonding of the laser diode 21, and the wiring area 2001 provides a place for subsequent wire bonding operations. need. And between the electrode 210 and the mounting area 2000, the solder 22 provided in the present case is also used for bonding between the laser diode 21 and the substrate 20. The solder 22 in this embodiment is to be completed by two layers of tin-gold alloys with different mixing ratios, and can be formed in the structure area of the base 20 by lamination, sputtering or electroplating. For example, the first layer near the base 20 is the main body layer 22 with a larger thickness, and the second layer of the emitter 21 is a thinner adhesion layer 22. It consists in changing the weight of gold and tin in the main layer 220 = the weight ratio of gold and tin in the bonding layer, and turning the thickness of the main layer ^ to the thickness of the cutting layer 221 (for example, the thickness of the main layer 220 0.2 micro ^ book / death 1 to 2 microns, and the thickness of the adhesive layer 221 is controlled at about "", but is not limited-this is the case), for example, the gold-tin weight ratio of the main layer 1246201 220 may be 80:20, the melting point is about Celsius 278 degrees, and the weight ratio of the tin of the adhesive layer 221 is relatively high (for example, the weight ratio of gold and tin may be 30:70, but it is not limited to this), and its melting point is higher than 278 degrees. In this way, during reflow Because the bonding layer has a high tin content, it is easy to quickly contact the surface gold of the laser diode. At the same time, the lower body layer 220 provides a higher proportion of gold and the bonding layer to perform a diffusion reaction. After sufficient diffusion, the bonding layer 221 disappears and the gold-tin weight ratio of the overall solder is drawn back to a near eutectic composition of nearly 80:20. The composition of gold and tin in this proportion will form a homogeneous micro-joint structure in the cooling process to increase the joint strength, and reduce the generation of tin-rich intermetals to improve the joint reliability. Therefore, this case can be shortened When working hours, the same day π guarantee has a degree of guilt, which can improve the lack of solder completed by the conventional tin-gold alloy, and achieve the main purpose of the development of this case. Please refer to the fourth figure, which is the case to improve the conventional technical means Schematic diagram of another embodiment of the developed solder structure. The solder 32 provided is mainly completed by multiple layers of tin-gold alloys with different mixing ratios. It can also be formed first by evaporation, sputtering, or electroplating. On the mounting area 2000 of the base 20, a first body layer 320 and a second body layer 322 having a larger thickness are provided near the base 20, A support layer 321 is sandwiched between the main body layers, and a junction layer 323 having a thickness greater than j is provided near the laser diode 21, and the main technical feature of this embodiment is that the main body layers 320 and 322 are made of gold. The tin weight ratio is controlled to be greater than the gold-tin weight ratio of the adhesive layer 323, and the thickness of the main body layers 32 and 322 is controlled to be larger than the thickness of the adhesive layer 323. In addition, an additional support layer 10 1246201 32 can be provided. The weight ratio of gold and tin is similar to that of the bonding layer 323. For example, the weight ratio of gold and tin of the main layers 320 and 322 is 80:20, and the weight ratio of gold and tin of the bonding layer 323 and the supporting floor 321 is A *. ,plate
AuSn4之各種介金屬依照所需金錫重量比例混合，，而如 此來在進行力π熱接合時，錫比例較高之接著層奶將 可提供與以金(Au)完成之電極21()之快速擴散接合，至於 金比例較高之主體層320、322將於熱接著凝固後，形成 AU5Sn或AuSn之介金屬來提供其高強度岐其完成後之 成品具有較佳之可靠度，至於支樓層321，因其炫點較主 體層32〇、322之炫點（約在攝氏⑽度）為高，因此可在 加熱過程中，可對已呈軟化之主體層32〇、322提供支撐功 月^’使雷射二極體在接合過程中不至於因為基板受力不均 而^成^^刀接合，進而造成接合強度、散熱能力以及產品 二不良衫響。但於完成接合後’又因其厚度較薄而 大擴政作用而視為消失，並將整體焊料的金錫重量比例拉 回近80.20之近共晶組成，因此並不會因 響接ί可靠度如此—來，本封在縮虹時之際，同時^ 又進而可改善上述習用錫金合金所完成焊料之缺 失，達成發展本案最主要之目的。 w 除了上述在基座20之電極層200上鍍上錫金烊 2，還有另外—種作法是先將錫金焊機在雷射 W,20^ 200 ^：! 、〃隹:、、匕、疋錫金焊料鍍在基座或晶粒上的差別，但 仍於此提出明，其示意圖請參見第五圖與第六圖所示之 1246201 實施例構造圖。 本專利所提出錫金焊料，除了可用在光電晶粒之接合 上’亦可用在其它電子產品構裝上’因此以上所述僅為本 創作之較佳實施例而已，並非用以限定本發明之申請專利 範圍，而本案技術思想可廣泛地被應用於積集化之各式收 發光模组上，因此凡其它未脫離本發明所揭示之精神丁所 完成之等效改變或修飾，均應包含在下述之申請專利範圍 内。 【圖式簡單說明】 第一圖(a)(b)，其係將雷射二極體構裝在基座(subm〇unt)上 之一構造示意圖。 第二圖’其係關於錫金合金之混合比與熔點之曲線圖。 第三圖，其係本案為改善上述習用技術手段所發展出來之 焊料構造之一實施例示意圖。 第四圖’其係本案為改善上述習用技術手段所發展出來之 焊料構造之另一實施例示意圖。 第五圖，其係本案為改善上述習用技術手段所發展出來之 焊料構造之再一實施例示意圖。 弟圖’其係本案為改善上述習用技術手段所發展出來之 焊料構造之又一實施例示意圖。 【主要元件符號說明】 12 1246201 雷射二極體11 基座10 構裝區1000 焊料12 雷射二極體21 基座10 構裝區2000 焊料22 接著層221 第一主體層320 支撐層321 電極110 電極層100 接線區1001 電極210 電極層200 接線區2001 主體層220 焊料32 第二主體層322 接著層323 13The various intermetals of AuSn4 are mixed according to the required weight ratio of gold and tin. In this way, when performing force π thermal bonding, the bonding layer with a higher tin ratio will provide the electrode 21 () with gold (Au). Rapid diffusion bonding. As for the main layers 320 and 322 with a high proportion of gold, they will be thermally solidified to form AU5Sn or AuSn intermediary metals to provide their high strength. The finished product has better reliability. As for the branch floor 321 , Because its dazzling point is higher than the dazzling point of the main body layer 32, 322 (about celsius degrees), it can provide support to the softened main body layer 32, 322 during the heating process ^ ' The laser diode is prevented from being ^^ knife-bonded due to uneven force on the substrate during the bonding process, which in turn causes bonding strength, heat dissipation capacity, and poor product noise. But after the completion of the bonding, it was considered to disappear due to its thinner thickness and the expansion effect, and the gold-tin weight ratio of the overall solder was pulled back to a nearly eutectic composition of nearly 80.20, so it will not be reliable due to the connection. In this way, this seal is at the time of shrinking the rainbow, and at the same time, it can also improve the lack of solder completed by the conventional tin-gold alloy, and achieve the most important purpose of developing this case. w In addition to the tin-plated tin 2 coated on the electrode layer 200 of the base 20 as described above, there is another method—first, place the tin-gold welding machine on the laser W, 20 ^ 200 ^:!, 〃 隹: ,, dagger, 疋The difference between the tin-gold solder plating on the pedestal or the die is still mentioned here. For the schematic diagrams, please refer to the structure diagram of the 1246201 embodiment shown in the fifth and sixth figures. The tin-gold solder proposed in this patent can be used in the bonding of optoelectronic die 'can also be used in the construction of other electronic products'. Therefore, the above description is only a preferred embodiment of this creation, and is not intended to limit the application of the present invention. The scope of the patent, and the technical ideas in this case can be widely applied to various types of light-receiving and receiving modules. Therefore, all other equivalent changes or modifications that do not depart from the spirit disclosed in the present invention should be included below. Within the scope of the patent application. [Brief description of the drawings] The first figure (a) (b) is a schematic diagram of a structure in which a laser diode is mounted on a submunt. The second graph 'is a graph of the mixing ratio and melting point of the tin-gold alloy. The third figure is a schematic diagram of an embodiment of the solder structure developed in this case to improve the conventional technical means. The fourth figure 'is a schematic diagram of another embodiment of the solder structure developed in this case to improve the conventional technical means. The fifth figure is a schematic diagram of another embodiment of the solder structure developed in this case to improve the conventional technical means. This figure is a schematic diagram of another embodiment of the solder structure developed in this case to improve the conventional technical means. [Description of main component symbols] 12 1246201 Laser diode 11 Base 10 Frame area 1000 solder 12 Laser diode 21 Base 10 Frame area 2000 Solder 22 Next layer 221 First body layer 320 Support layer 321 Electrode 110 Electrode layer 100 Wiring area 1001 Electrode 210 Electrode layer 200 Wiring area 2001 Body layer 220 Solder 32 Second body layer 322 Next layer 323 13