1242693 (υ 欢、發明說明 【發明所屬之技術領域】 本發明係關於一種光罩處理器，其中，顯影程序及蝕 刻程序係分別在不同的室中予以進行，以防止製程缺陷 (例如，鉻點缺陷）的發生，以及一種使用此光罩處理器來 處理光罩之方法。 【先前技術】 習知上，在製作光罩的製程方面，顯影程序和蝕刻程 序一般係在同一個處理室中予以進行的。但是，實施光罩 顯影操作所使用之顯影液係呈弱鹼性的，而實施光罩蝕刻 操作所使用之蝕刻液係呈弱酸性的，如果在同一個處理室 中進行顯影程序和蝕刻程序，將會起酸和鹼的反應而產生 結晶系固體（亦即，結晶產物）黏著於處理室的室壁上，而 此結晶產物將會嚴重地影響製程的結果。 在製作光罩的製程期間，酸和鹼反應所產生之結晶系 固體將會再度濺擊於光罩上而造成鉻點缺陷。此外，在光 罩的顯影過程中，光阻劑殘留物是否被徹底去除也會直接 影響製程的結果。因此，對於製作光罩的製程來說，解決 上面之化學的結晶系固體及光阻殘留物問題以減少製程缺 陷的增加係本發明的一項重要課題。 【發明內容】 本發明之目的在於克服習知化學的結晶系固體問題而 >4 - (2) 1242693 提供一種光罩處理器，其中，在不同的處理室中進行光罩 的顯影程序及餓刻程序，並且額外設置一轉移及強烈的 D I洗濯模組’以實質地改善於光罩的製程期間所產生之 製程缺陷例如’由於在顯影過程中顯影不足或者有微粒子 或光阻劑殘留物遮住應該被蝕刻掉的部分而導致在蝕刻過 程中無法將鉻触刻掉的鉻點缺陷，進而提高產品的良率及 品質可靠度。 依據本發明的一個樣態，本發明提供一種光罩處理 器，其包括一機台；一裝載匣，位於光罩處理器的右下 側，用以裝載光罩；一第一機械手臂，用以將光罩裝載至 顯影室；一顯影室，用以實施顯影及DI洗濯操作，且具 有一第一夾盤，用以經由第一夾盤的上升及下降而使承載 於其上之光罩到達指定的位置；一轉移及強烈的D I洗濯 模組，用以實施光罩的轉移及強烈的淸洗操作，且具有一 第二夾盤，用以經由第二夾盤而使光罩從轉移及強烈的 DI洗濯模組之一側轉移到達其另一側；一蝕刻室，用以 實施蝕刻及DI洗濯操作，且具有一第三夾盤，用以經由 第三夾盤的上升及下降而使承載於其上之光罩到達指定的 位置；一第二機械手臂，用以將光罩裝載至卸載匣；以及 一卸載匣，位於光罩處理器的左下側，用以卸載光罩。 依據本發明所提供之光罩處理器的顯影室設置有4個 噴嘴於顯影室的四個方向上，藉以讓顯影液及超純淨水經 由噴嘴而噴灑在光罩的表面上，以便在實施顯影操作的同 時，實施DI洗濯操作以去除微粒子。 -5- (3) 1242693 依據本發明所提供之光罩處理器的蝕刻室設置有4個 噴嘴於蝕刻室的四個方向上，藉以讓蝕刻液及超純淨水經 由噴嘴而噴灑在光罩的表面上，以便在實施蝕刻操作的同 時’實施D I洗濯操作以去除微粒子。 依據本發明所提供之光罩處理器，在蝕刻及淸洗光罩 之後’藉由調局馬達的轉速至1 5 0 0到2 5 0 0 r p m或更高的 轉速來旋乾光罩。 依據本發明所提供之光罩處理器的強烈的DI洗濯模 組設置有至少6個噴嘴，分成兩組或多組以實施超強的 DI洗淨操作來徹底去除微粒子及光阻劑殘餘物。 依據本發明的另一個樣態，本發明提供一種使用光罩 處理器來處理光罩的方法，其包括步驟：將光罩裝載至裝 載匣’並使第一夾盤上升到裝載-卸載位置；以第一機械 手臂而將光罩裝載至顯影室之第一夾盤，並使第一夾盤下 降到顯影操作處理位置；執行顯影及洗濯操作程式，在完 成顯影之後’執行去離子水洗淨程序；保持光罩的表面濕 潤，並使顯影室之第一夾盤上升到裝載-卸載位置，以第 一機械手臂而將光罩轉移至轉移及強烈的DI洗濯模組； 將光罩從轉移及強烈的DI洗濯模組的一側轉移至另一 側’並在轉移期間執行強烈的去離子水洗淨程序；使蝕刻 室之第三夾盤上升到裝載-卸載位置，並且以第二機械手 臂而將光罩轉移至蝕刻室之第三夾盤；使第三夾盤下降到 蝕刻操作處理位置，以執行蝕刻及洗濯操作程式，並且在 蝕刻及洗濯操作完成之後，實施旋乾程序來旋乾光罩，然 冬 (4) 1242693 後使弟二夾盤上升到裝載-卸載位置；以及以第二 臂而將光罩裝載至卸載匣。 【實施方式】 現在，將於下文中參照附圖來說明根據本發明 實施例。 桌一圖係顯不依據本發明之光罩處理器的示 圖，第二圖係顯示依據本發明之光罩處理器的示 圖。 參照第一圖及第二圖，依據本發明之光罩處理 要包括一機台 2、一裝載匣 3、一第一機械手臂4 影室5、一轉移及強烈的去離子水（DI)洗濯模組6 刻室7、一第二機械手臂8、及一卸載匣9。 如第一圖所示，裝載匣3係位於光罩處理器1 2的右下側，用來裝載光罩。第一機械手臂4係位 匣3的後方，用來將光罩從裝載匣3裝載至顯影室 夾盤上，以及在顯影及超純淨水洗濯操作完成之後 罩轉移至轉移及強烈的D1洗濯模組。 第三圖係顯示顯影室及蝕刻室中之噴嘴的配置丨 參照第一圖到第三圖，顯影室5係位於第一機 4的左側，用來執行顯影及DI洗濯操作。一第一 5 顯示出）被設置於顯影室5中，藉由顯影室5中之 盤的上升及下降來裝載光罩或者使承載於其上之光 實施顯影操作的位置。4個噴嘴5 1被設置於顯影1 機械手 之較佳 意頂視 意前視 器1主 、一11 、一蝕 之機台 於裝載 的第一 ，將光 械手臂 6盤（未 Λ-Α- 弟一夾 罩到達 室5的 -7- (5) 1242693 四個方向上’藉由讓顯影液及超純淨水流到噴嘴5 ]之後 再噴灑於光罩的表面上，以便在光罩的顯影前後保持光罩 的濕潤並去除微粒子。 轉移及強烈的DI洗濯模組6係緊鄰於顯影室5，用 來實施光罩之轉移及強烈的淸洗操作，且一第二夾盤（未 顯示出）被設置於轉移及強烈的D I洗濯模組6中，藉由轉 移及強烈的DI洗濯模組6中之第二夾盤而使承載於其上 之光罩從轉移及強烈的DI洗濯模組6的一側緩慢地轉移 至其另一'側。 第四圖係進一步顯示轉移及強烈的DI洗濯模組6中 之強烈的DI洗濯模組的配置圖。參照第四圖，至少6個 噴嘴6 1分成兩組或多組而被設置於強烈的DI洗濯模組 中’用以實施超強的DI洗淨操作來徹底去除微粒子及光 阻劑殘餘物，以減少鉻點缺陷等的缺陷。第五圖係顯示去 離子水經由噴嘴6 1而被噴灑出所形成的噴灑形狀。 蝕刻室7係緊鄰於轉移及強烈的DI洗濯模組6，用 來執行蝕刻及DI洗濯操作。一第三夾盤（未顯示出）被設 置於蝕刻室7中，藉由蝕刻室7之第三夾盤的上升及下降 來裝載光罩或者使承載於其上之光罩到達實施蝕刻操作的 位置。參照第三圖，和顯影室5相同地，4個噴嘴7 1被 設置於蝕刻室7的四個方向上，藉由讓蝕刻液及超純淨水 流到噴嘴7 1之後再噴灑於光罩的表面上，以便在光罩的 蝕刻後淸洗光罩並去除微粒子，而且在蝕刻及淸洗光罩之 後旋乾光罩。 (6) 1242693 第二機械手臂8係位於蝕刻室7的左側，用來將光罩 從蝕刻室7之第三夾盤裝載至卸載匣，而卸載匣9係位於 先罩處理益1之機台2的左下側，用來卸載光罩。 下面將參照第六圖來敘述使用上述之光罩處理器]來 處理光罩的方法。 桌六圖係顯不使用上述之光罩處理器來實施光罩之處 理程序的流程圖。 首先，在步驟S1中，將光罩置放於裝載匣3內，並 按壓下執行鍵，此時，第一機械手臂4偵測光罩的位置， 同時顯影室5之夾盤亦藉由馬達（未顯示出）的帶動而上升 至裝載-卸載位置。在步驟S2中，第一機械手臂4將光罩 從裝載匣3裝載至顯影室5之夾盤上，並且使顯影室5之 夾盤下降至執行顯影操作的位置，然後在步驟S 3中，執 行顯影及D I洗濯操作程式，此顯影及D I洗濯操作係利用 純淨的氮氣加壓於容納顯影液之槽中，超純淨水爲循環的 純水，並藉由一泵來保持一定的壓力，且連接至機台端， 再利用電訊號來控制電磁閥及氣動閥的開啓及關閉，以便 讓顯影液和超純淨水流到噴嘴後再噴灑在光罩的表面上， 而且實施顯影及DI洗濯操作的時間、馬達的速度、化學 品、及水流等等均係可控制且可調整的，並且使去離子水 保持在遮罩光阻劑側。在步驟S4中，保持光罩的表面濕 潤，亦即，光罩在實施顯影及DI洗濯操作之後不被旋 乾，並且使顯影室5之夾盤上升至裝載-卸載位置，然後 利用第一機械手臂4而將光罩從顯影室5之夾盤轉移至強 冬 (7) 1242693 烈的DI洗濯模組6之夾盤。在步驟s 5中，於光罩被轉移 至強烈的D ]洗濯模組6的夾盤之後，馬達驅動導螺桿 (lead screw)(未顯示出）而緩慢地將光罩從強烈的di洗濯 模過6的一側轉移至另外一側，並且在轉移期間，同時利 用噴嘴噴灑大量的去離子水來實施洗濯操作，以徹底去除 微粒子及光阻劑殘留物，然後在將光罩轉移至餓刻室7之 後停止噴嘴的噴灑動作。在步驟S6中，蝕刻室7之夾盤 錯由馬達的帶動而上升至裝載-卸載位置，且第二機械手 臂8將光罩從強烈的〇 I洗濯模組6轉移至蝕刻室7之夾 盤上。在步驟S 7中，使蝕刻室7之夾盤下降至執行蝕刻 操作的位置，執行蝕刻及DI洗濯操作程式，此蝕刻及DI 洗濯操作係利用純淨的氮氣加壓於容納蝕刻液之槽中，超 純淨水爲循環的純水，並藉由一泵來保持一定的壓力，且 連接至機台端，再利用電訊號來控制電磁閥及氣動閥的開 啓及關閉，以便讓蝕刻液和超純淨水流到噴嘴後再噴灑在 光罩的表面上，而且實施蝕刻及DI洗濯操作的時間、馬 達的速度' 化學品、及水流等等均係可控制且可調整的， 然後在蝕刻及淸洗光罩之後，將馬達的轉速調高至15〇〇 到2 5 0 0 rpm或更高的轉速來旋乾光罩，而後使蝕刻室7 之夾盤上升至裝載-卸載位置。在步驟S8中，第二機械手 臂8將光罩從蝕刻室7之夾盤裝載至卸載匣9，然後完成 光罩的處理程序。 因此，在習知技術中，因爲顯影和蝕刻操作係在同一 室中進行的，所以呈弱鹼性的顯影液會和呈弱酸性的蝕刻 -10- (8) 1242693 液起化學反應而產生結晶物，此化學結晶物會嚴重地影響 製程結果。反觀在本發明中，由於顯影和触刻操作係在不 同的室中予以進行的，所以能夠明顯地減少製程缺陷的產 生。 此外，在光罩的顯影過程中，光阻劑殘留物是否被徹 底去除也會直接影響製程的結果，所以在光罩的顯影完成 之後，必須實施DI洗濯操作，以將光阻劑殘留物徹底去 除。爲了有效地去除微粒子及光阻劑殘留物，光罩在從顯 影室經由轉移及強烈的D I洗濯模組而到達蝕刻室之時’ 除了分別在執行顯影操作和触刻操作的同時實施D 1洗濯 操作，並且在轉移及強烈的DI洗濯模組中，爲了加強洗 淨的功能，利用較強的超純淨水衝力來將光阻劑殘留物徹 底去除，以利於光罩再轉移至蝕刻室進行蝕刻操作。 再者，因爲1C的線路尺寸係相當的小，所以在1C線 路的製作上有些微的缺陷，極易造成1C良率及產品品質 可靠度的降低，因此，在光罩的製作上缺陷的控制以使製 程缺陷盡可能地減少對業者來說係必須的。 因此，依據本發明之光罩處理器能夠克服習知化學結 晶物問題，並且額外設置一轉移及強烈的DI洗濯模組來 實施超強的洗淨處理，以實質地改善於光罩的製程期間所 產生之製程缺陷例如，由於在顯影過程中顯影不足或者有 微粒子或光阻劑殘留物遮住應該被蝕刻掉的部分而導致在 蝕刻過程中無法將鉻蝕刻掉的鉻點缺陷。 古又由則述本發明之光卓處理器實施例的詳細說明可 -11 - (9) 1242693 知，本發明提供一種新穎的光罩處理器及光罩 法，可有效地改善習知之光罩製作上的缺點，得 品的良率及品質可靠度，確實爲〜兼具新穎性万 設計’應可符合專利之串請要件，爰依法提出申 【圖式簡單說明】 爲使貴審查委員能夠進一步瞭解本發明 特徵及其他目的，茲附以圖式詳細說明於下。 第一圖係顯示根據本發明之光罩處理器的 圖。 第一 0係藏不根據本發明之光罩處理器的 圖。 第三圖係顯示顯影室及蝕刻室中之噴嘴的配 桌四Η係進一步顯不轉移及強烈的洗濯 強烈的D I洗濯模組的配置圖。 第五圖係顯示去離子水經由噴嘴而被噴灑出 噴灑形狀。 第六圖係顯示使用根據本發明之光罩處理器 卓之處理程序的流程圖。 [主要元件對照表] 1 光罩處理器 2 機台 3 裝載匣 的處理方 以提高產 進步性之 請。 之優點、 示意頂視 示意前視 置圖。 模組中之 所形成的 來實施光 (10) (10)1242693 4 第一機械手臂 5 顯影室 6 轉移及強烈的DI洗濯模組 7 蝕刻室 8 第二機械手臂 9 卸載匣 5 1, 6 1 5 7 1 噴嘴1242693 (υ Huan, description of the invention [Technical field to which the invention belongs] The present invention relates to a photomask processor, wherein the development process and the etching process are performed in different chambers respectively to prevent process defects (for example, chromium dots Defect), and a method for processing a photomask using the photomask processor. [Prior Art] Conventionally, in the process of making a photomask, the development process and the etching process are generally performed in the same processing chamber. However, the developing solution used for performing the mask development operation is weakly alkaline, and the etching solution used for performing the mask etching operation is weakly acidic. If the developing process and the development process are performed in the same processing chamber, The etching process will react with acid and alkali to produce crystalline solids (that is, crystalline products) adhere to the wall of the processing chamber, and this crystalline product will seriously affect the results of the manufacturing process. During the manufacturing process, the crystalline solid produced by the reaction between acid and alkali will be splashed on the photomask again, causing chromium dot defects. In addition, In the process, whether the photoresist residue is completely removed will also directly affect the process results. Therefore, for the process of making a photomask, the above problems of chemical crystalline solids and photoresist residues are solved to reduce the increase of process defects. It is an important subject of the present invention. [Summary of the invention] The object of the present invention is to overcome the problem of crystalline solids of conventional chemistry and > 4-(2) 1242693 to provide a photomask processor, in which different processing chambers The development process and the engraving process of the photomask are performed in the process, and a transfer and strong DI cleaning module is additionally provided to substantially improve the process defects generated during the process of the photomask, such as' due to insufficient development during the development process or There are micro-particles or photoresist residues covering the part that should be etched, resulting in chromium point defects that cannot be etched away during the etching process, thereby improving the yield and quality reliability of the product. State, the present invention provides a photomask processor, which includes a machine; a loading box is located at the lower right side of the photomask processor, and is used for loading light A first robot arm for loading the photomask to the developing chamber; a developing chamber for developing and DI washing operations, and a first chuck for raising and lowering the first chuck to The photomask carried thereon reaches the designated position; a transfer and strong DI cleaning module is used to implement the photomask transfer and strong cleaning operation, and has a second chuck for passing through the second Chuck to transfer the photomask from one side of the transfer and strong DI cleaning module to the other side; an etching chamber for performing etching and DI cleaning operations, and a third chuck for Three chucks are raised and lowered to bring the mask carried on it to a designated position; a second robotic arm is used to load the mask into an unloading box; and an unloading box is located on the lower left side of the mask processor The developing chamber of the mask processor according to the present invention is provided with four nozzles in four directions of the developing chamber, so that the developing solution and ultrapure water are sprayed on the mask through the nozzles. Surface so that during development At the same time, a DI washing operation was performed to remove fine particles. -5- (3) 1242693 The etching chamber of the mask processor provided according to the present invention is provided with 4 nozzles in four directions of the etching chamber, so that the etching solution and ultrapure water are sprayed on the mask through the nozzle. Surface so as to perform a DI washing operation to remove particles while performing an etching operation. According to the photomask processor provided by the present invention, after the photomask is etched and cleaned, the photomask is spin-dried by adjusting the rotation speed of the motor to a rotation speed of 1 500 to 2500 r p m or higher. The strong DI cleaning mold set of the photomask processor according to the present invention is provided with at least 6 nozzles, and is divided into two or more groups to perform a super strong DI cleaning operation to completely remove particles and photoresist residues. According to another aspect of the present invention, the present invention provides a method for processing a photomask using a photomask processor, comprising the steps of: loading the photomask to a loading cassette 'and raising the first chuck to a loading-unloading position; Load the photomask to the first chuck of the developing chamber with the first robotic arm, and lower the first chuck to the processing position of the developing operation; execute the developing and washing operation program, and perform the deionized water cleaning after completing the developing Procedure; keep the surface of the mask wet, and raise the first chuck of the developing chamber to the loading-unloading position, and transfer the mask to the transfer and strong DI washing module with the first robot arm; transfer the mask from the transfer And the strong DI washing module is transferred from one side to the other 'and performs a strong deionized water cleaning procedure during the transfer; the third chuck of the etching chamber is raised to the loading-unloading position, and the second machine Arm to transfer the reticle to the third chuck of the etching chamber; lower the third chuck to the etching operation processing position to execute the etching and washing operation program, and after the etching and washing operation is completed Spin-spin dry to dry program mask, and then make the winter two brother (4) increased to 1,242,693 chuck loading - unloading position; and a second arm of a mask loaded to the unloading magazine. [Embodiment] Now, an embodiment according to the present invention will be described below with reference to the drawings. The first table is a view showing a mask processor according to the present invention, and the second table is a view showing a mask processor according to the present invention. Referring to the first and second figures, the mask processing according to the present invention includes a machine table 2, a loading box 3, a first robot arm 4, a shadow room 5, a transfer and strong deionized water (DI) washing. Module 6 engraving chamber 7, a second robot arm 8, and an unloading box 9. As shown in the first figure, the loading cassette 3 is located on the lower right side of the mask processor 12 for loading the mask. The rear of the first robotic arm 4 series cassette 3 is used to load the photomask from the loading cassette 3 onto the developing chamber chuck, and after the development and ultrapure water washing operations are completed, the mask is transferred to the transfer and strong D1 washing mold. group. The third figure shows the arrangement of the nozzles in the developing chamber and the etching chamber. Referring to the first to third figures, the developing chamber 5 is located on the left side of the first machine 4 and is used to perform the development and DI washing operations. A first 5 shows a position where the photomask is mounted in the developing chamber 5 by raising and lowering the disc in the developing chamber 5 or the light carried thereon is subjected to a developing operation. 4 nozzles 5 1 are set in the developing 1 robot. The top, front, and front of the front viewr 1 are main, one 11 and one eclipse. The first machine is loaded, and the optical arm is 6 disks (not Λ-Α). -Brother Yiyi's mask reaches -7- (5) 1242693 in four directions' by letting the developer and ultrapure water flow to the nozzle 5], and then spraying on the surface of the mask to facilitate the development of the mask Keep the mask wet and remove the particles before and after. The transfer and intense DI cleaning module 6 is located next to the developing chamber 5 for performing the mask transfer and intense cleaning operation, and a second chuck (not shown) ) Is set in the transfer and intensive DI washing module 6, and the second chuck in the transfer and intensive DI washing module 6 is used to make the photomask carried thereon from the transfer and intensive DI washing module One side of 6 is slowly transferred to the other side of it. The fourth picture is further showing the configuration of the strong DI washing module in the transferred and strong DI washing module 6. Referring to the fourth picture, at least 6 nozzles 6 1 Divided into two or more groups and installed in a strong DI washing module 'for super strong DI washing Operation to completely remove particles and photoresist residues to reduce defects such as chromium point defects. The fifth figure shows the spray shape formed by deionized water being sprayed through the nozzle 61. The etching chamber 7 is next to the transfer and A strong DI cleaning module 6 is used to perform etching and DI cleaning operations. A third chuck (not shown) is set in the etching chamber 7 by rising and falling of the third chuck of the etching chamber 7 Load the photomask or bring the photomask carried thereon to the position where the etching operation is performed. Referring to the third figure, as with the developing chamber 5, four nozzles 71 are provided in four directions of the etching chamber 7, and The etchant and ultra-pure water are allowed to flow to the nozzle 71 before spraying on the surface of the photomask, so as to clean the photomask and remove particles after the photomask is etched, and spin-dry the photomask after etching and cleaning. (6) 1242693 The second robot arm 8 is located on the left side of the etching chamber 7 and is used to load the photomask from the third chuck of the etching chamber 7 to the unloading box, and the unloading box 9 is located on the first mask processing machine 1 The lower left side of 2 is used to unload the photomask. A method for processing a photomask using the above-mentioned photomask processor] will be described with reference to the sixth figure. Table 6 shows a flowchart of a processing procedure for implementing a photomask without using the above-mentioned photomask processor. First, in step S1 In the process, the photomask is placed in the loading box 3 and the execution key is pressed. At this time, the first robot arm 4 detects the position of the photomask, and the chuck of the developing chamber 5 is also driven by a motor (not shown). To the loading-unloading position. In step S2, the first robot arm 4 loads the photomask from the loading cassette 3 onto the chuck of the developing chamber 5, and lowers the chuck of the developing chamber 5 to perform the developing operation. Position, then in step S3, execute the developing and DI washing operation program. This developing and DI washing operation uses pure nitrogen to pressurize the tank containing the developing solution, and the ultra-pure water is circulating pure water. A pump is used to maintain a certain pressure, and it is connected to the machine end. The electric signal is used to control the opening and closing of the solenoid valve and the pneumatic valve, so that the developer and ultra-pure water flow to the nozzle and then spray on the surface of the photomask. And implement the display The time of the cleaning operation of the shadow and DI, the speed of the motor, the chemicals, and the water flow are all controllable and adjustable, and the deionized water is kept on the side of the photoresist of the mask. In step S4, the surface of the photomask is kept moist, that is, the photomask is not spin-dried after the development and DI washing operations are performed, and the chuck of the development chamber 5 is raised to the loading-unloading position, and then the first machine is used. The arm 4 transfers the photomask from the chuck of the developing chamber 5 to the chuck of the strong DI washing module 6 of the strong winter (7) 1242693. In step s5, after the photomask is transferred to the strong D] washing chuck of the module 6, the motor drives a lead screw (not shown) to slowly clean the photomask from the strong di One side after 6 is transferred to the other side, and during the transfer, the nozzle is sprayed with a large amount of deionized water to perform a washing operation to completely remove particles and photoresist residues, and then transfer the photomask to the After that, the spraying operation of the nozzle is stopped. In step S6, the chuck of the etching chamber 7 is moved to the loading-unloading position by a motor, and the second robot arm 8 transfers the photomask from the strong cleaning module 6 to the chuck of the etching chamber 7. on. In step S7, the chuck of the etching chamber 7 is lowered to a position where an etching operation is performed, and an etching and DI cleaning operation program is performed. This etching and DI cleaning operation is pressurized in a tank containing an etching solution with pure nitrogen. Ultra-pure water is circulating pure water, which is maintained at a certain pressure by a pump, and is connected to the machine end, and then uses electrical signals to control the opening and closing of solenoid valves and pneumatic valves in order to allow the etchant and ultra-pure water to flow. After spraying to the nozzle, spray on the surface of the mask, and the time for performing the etching and DI washing operations, the speed of the motor, chemicals, and water flow are all controllable and adjustable. Then, the mask is etched and washed After that, the rotation speed of the motor is increased to 15000 to 2500 rpm or higher to spin dry the photomask, and then the chuck of the etching chamber 7 is raised to the loading-unloading position. In step S8, the second robot arm 8 loads the photomask from the chuck of the etching chamber 7 to the unloading cassette 9, and then completes the processing procedure of the photomask. Therefore, in the conventional technology, since the developing and etching operations are performed in the same chamber, a weakly alkaline developing solution reacts with a weakly acidic etching solution -10- (8) 1242693, which produces crystals. This chemical crystal will seriously affect the process results. In contrast, in the present invention, since the developing and touching operations are performed in different chambers, the occurrence of process defects can be significantly reduced. In addition, during the development of the photomask, whether the photoresist residue is completely removed will also directly affect the results of the process. Therefore, after the photomask development is completed, a DI washing operation must be performed to completely remove the photoresist residue. Remove. In order to effectively remove particles and photoresist residues, when the photomask reaches the etching chamber from the development chamber through the transfer and strong DI washing module, except that the D 1 washing is performed at the same time as the developing operation and the touch operation. Operation, and in the transfer and strong DI cleaning module, in order to enhance the cleaning function, the use of strong ultrapure water to completely remove the photoresist residue to facilitate the photomask to be transferred to the etching chamber for etching operating. In addition, because the size of the 1C circuit is quite small, there are some slight defects in the production of the 1C circuit, which will easily cause the 1C yield and the reliability of the product quality to decrease. Therefore, the defect control in the production of the photomask It is necessary for the operators to minimize the process defects. Therefore, the photomask processor according to the present invention can overcome the problem of conventional chemical crystals, and additionally set a transfer and strong DI cleaning module to perform a super strong cleaning process to substantially improve the process of the photomask The resulting process defects are, for example, chromium point defects that cannot be etched away during the etching process due to insufficient development during the development process or that there are particles or photoresist residues covering the part that should be etched away. In ancient times, the detailed description of the embodiment of the light processor of the present invention can be known as -11-(9) 1242693. The present invention provides a novel photomask processor and photomask method, which can effectively improve the conventional photomask. The shortcomings in production, the yield of the product and the quality reliability are indeed ~ both novel and innovative. The design should meet the requirements of the patent, and apply according to the law. [Schematic description] In order to allow your review committee to be able to To further understand the features and other objects of the present invention, the drawings are described in detail below. The first diagram is a diagram showing a mask processor according to the present invention. The first 0 is a view showing a mask processor not according to the present invention. The third picture shows the arrangement of the nozzles in the developing chamber and the etching chamber. The fourth diagram is the layout of the strong DI cleaning module, which shows no transfer and strong washing. The fifth figure shows the spray shape of the deionized water sprayed through the nozzle. The sixth diagram is a flowchart showing a processing procedure using the mask processor according to the present invention. [Comparison table of main components] 1 Photomask processor 2 Machine 3 Processing method of loading box Advantages, schematic top view, schematic front view layout. The formation of the module to implement light (10) (10) 1242693 4 the first robot arm 5 the development chamber 6 transfer and strong DI cleaning module 7 the etching chamber 8 the second robot arm 9 unloading box 5 1, 6 1 5 7 1 nozzle
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