TWI239438B - System including power conditioning modules - Google Patents

System including power conditioning modules Download PDF

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Publication number
TWI239438B
TWI239438B TW092102596A TW92102596A TWI239438B TW I239438 B TWI239438 B TW I239438B TW 092102596 A TW092102596 A TW 092102596A TW 92102596 A TW92102596 A TW 92102596A TW I239438 B TWI239438 B TW I239438B
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TW
Taiwan
Prior art keywords
power
thermal energy
interface
energy management
adjustment
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TW092102596A
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Chinese (zh)
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TW200302960A (en
Inventor
Thomas William Kenny Jr
Kenneth E Goodson
Juan G Santiago
John J Kim
Robert C Chaplinsky
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Cooligy Inc
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Priority claimed from US10/072,137 external-priority patent/US6606251B1/en
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Publication of TW200302960A publication Critical patent/TW200302960A/en
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Publication of TWI239438B publication Critical patent/TWI239438B/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73257Bump and wire connectors

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Combinations Of Printed Boards (AREA)
  • Power Sources (AREA)

Abstract

In one aspect, the present invention is a technique of, and a system for conditioning power for a consuming device. In this regard, a power conditioning module, affixed to an integrated circuit device, conditions power to be applied to the integrated circuit device. The power conditioning module includes a semiconductor substrate having a first interface and a second interface wherein the first interface opposes the second interface. The power conditioning module further includes a plurality of includes vias, to provide electrical connection between the first interface and the second interface, and a first set of pads, disposed on the first interface and a second set of pads disposed on the second interface. Each of the pads is connected to a corresponding one of the interface vias on either the first or second interface. The power conditioning module also includes electrical circuitry, disposed within semiconductor substrate, to condition the power to be applied to the integrated circuit device. The electrical circuitry may be disposed on the first interface, the second interface, or both interfaces. Moreover, the electrical circuitry includes at least one voltage regulator and at least one capacitor.

Description

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五、發明說明Ο) 〔發明領域〕 3明係有關於-種電功率調整及 統的方法及裝置,特別是,本發 4巴&埋糸 電功率調整技術及熱捕捉、移‘技術:二關 矽、鍺、砷化鎵)的内部或上方。 、土& (堵如· 〔習知技藝〕 隨著半導體裝置(舉例來 的急速增加,電子及電力裝置 力口。另外,由於這個持續增加 對於功率調整及熱拒絕能力的 隨著微處理器速度及電晶體數 消耗增加)調整的需求係持續 能的整合到微處理器中(舉例 點處理器及視訊或圖像處理哭 必須能夠及時地滿足或因應魚 間位準。再者’隨著微處理器 及愈來愈多功能的整合到這個 生熱能的捕捉及移除亦已然成 功率供應器乃是用來滿足 應器與這個消耗裝置卻常常相 個裝置間的有限線長會具有電 這個消耗裝置的需求變動而導 前所述,功率消耗(舉例來說 說··微處理器)上電晶體數目 對於額外功率的需求亦持續增 的需求,支援這類裝置的系統 需求亦持續增加。舉例來說, 目的增加’電功率(平均功率 乓=。另外,隨著愈來愈多功 ^說:這些功能通常是利用浮 完成)’這個功率調整系統亦 速變動的功率消耗的時態及空 速度及電晶體數目的增加、以 微處理器中,這類微處理器所 為另一個急速增加的需求。 功率,求,然而,這個功率供 隔二疋距離。這個供應器及這 容器及電感器,其可能會因為 致功率傳輸的時間延遲。如先 ••微處理器中)的時態變動會 1239438 五、發明說明(2) 隨:處理^逮度的增加、以及隨著愈來愈多功能的 個處理器中而增加。有鑑於此,功率調整電力或ς:到这 設置便會愈來愈靠近這個消耗裝置。將這些功 敕系:的 (諸如:電屢調整器、電容器、直流直流(dc〜正= )放置在适個消耗裝置旁邊,這些功率 , 以滿足。 而A的考置便可 y 第1圖係表示這個工力率調整系、統的—種傳 系統通常會包括分離的電容器、I壓調整哭二構。迢個 (AC—DC)或直流直流(Dc—DC)轉換器了簡==直= 的電容器通常會設置在這個積體電路裝置的 "兄,分離 個積體電路裝置電性連接。如此,這個裝置在摔作 發需求便可以經由這個電容器的儲存, ” #功間的犬 供應器滿足這個增加需求的必要時門 =/ ’藉以在這個 入電壓。這類電容器通常會稱為” / /、、夺一相對常數的輸 並且是類比電路設計、數位電路設計、功= aSS)電容器”’ 常見元件。 率裝置電路設計的 入V. Description of the invention 0) [Field of invention] 3 Ming is related to a method and device for electric power adjustment and integration, in particular, the present 4 bar & buried electric power adjustment technology and thermal capture and shift technology: Erguan Silicon, germanium, gallium arsenide). , 土 & (cluing [Science and Technology] With the rapid increase of semiconductor devices (for example, electronic and electrical devices). In addition, due to this continuous increase in power adjustment and thermal rejection capabilities, with the microprocessor The need to adjust speed and transistor consumption is continuously integrated into the microprocessor (for example, point processors and video or image processing must be able to meet or respond to the fish level in a timely manner. The microprocessor and the increasingly versatile integration of the capture and removal of this heat-generating energy are already successful. The supply is used to satisfy the finite wire length between the reactor and this consumer device, but often the devices will have electricity. The demand for this consumer device has changed as mentioned earlier. The power consumption (for example, · microprocessor), the number of power-on crystals, and the demand for additional power also continue to increase. The system requirements to support such devices also continue to increase. For example, the purpose is to increase the 'electric power (average power pong =. In addition, with more and more work ^ said: these functions are usually done using floating) This power adjustment system also varies rapidly in terms of power consumption and the increase in space velocity and the number of transistors. Among microprocessors, this type of microprocessor has another rapidly increasing demand. Power, please, however, this power The supply is separated by a distance of 2. The power supply and the container and inductor may be delayed due to the time of power transmission. (For example, • in the microprocessor), the temporal change will be 1239438 V. Description of the invention (2) : The increase in processing power and increase with more and more multi-processors. In view of this, the power adjustment power or ς: will get closer to the consumer device at this setting. Put these functions System: (such as: electric regulator, capacitor, DC direct current (dc ~ positive =) is placed next to a suitable consumer device, these powers to meet. And A can be installed. Figure 1 shows this Power rate adjustment system, unified-seed transmission system usually includes separate capacitors, I voltage adjustment and two structure. One (AC-DC) or DC-DC (Dc-DC) converter is simple == Straight = The capacitor is usually set "Integrator of this integrated circuit device, separate the integrated circuit device is electrically connected. In this way, the device can be stored via this capacitor in the event of a crash," said a dog supplier of work that meets this increased demand. When necessary, the gate = / 'therefore the input voltage. This type of capacitor is usually called "/ / ,, a relatively constant input and is an analog circuit design, digital circuit design, work = aSS) capacitors' common components. Rate device circuit design

,调整器乃疋用來接收高電壓(舉例來 —功率、並且輸出相對穩定的低電壓(舉w 輸出功率。電壓調整器傾向提供的這個低電壓4對至二) 向電壓位準的變動或这個消耗裝置的電流變動,通常合1 大幅增加的抗擾性(im㈣nity )。調整器通常會用在比 數位電子功率調整系統的設計中,並且更加可能會放置 有快速時間變動功率需求的裝置附近。 交流直流(AC -扒)及直流直流(DC—κ)轉換器乃The regulator is used to receive high voltage (for example-power, and output a relatively stable low voltage (for example, w output power. The voltage regulator tends to provide this low voltage 4 to 2)) to the voltage level or The current variation of this consuming device is usually combined with a greatly increased immunity (im㈣nity). The regulator is usually used in the design of digital electronic power adjustment systems, and it is more likely to place devices with fast time varying power requirements Nearby: AC-DC and DC-κ converters are

1239438 五、發明說明(3) 用來將某便利來源的特定供庙^ 以,、/媪 征與η十 > 、上乂 仏應電壓轉換至適當型態,耢以权 供,舉例來况,14個積辦雪% ^ , 念 續故合接徂时 裝置消耗。在許多例子中 、、死功率電路會&供單個相斜古 々、 11nv ,拉+平^相對阿電壓(舉例來說:48V DC戒 9 ’廷個積體電路裝置便可以要求非常不同 的供應電壓(舉例來說:丨至叭n衣、置便」乂要 > 井赭換 笼你π、&认^ 1至5V DC )。在這種情況下,轉狹 ‘便可以轉換這個功率、甘担 冷獻。 公“,糸統中/轉換器乃是盡可能設置於這個消耗裝置旁 、精::f :個I置所生的功率消耗變動期間提供穩定的電 ^ 明芩妝,舉例來說,美國專利號碼US59 0 1 040 ; US6191945 及US6285550 。) 一除了功率官理考量外,這些裝置的功率消耗增加亦會對 於这個熱能管理系統(亦即:捕捉及/或拒絕熱能的系統) 邊成頟外負擔。有鑑於此,熱能管理系統便會利用諸如散熱 装置(heat sink )、鼓風機(fan )、利用冷卻水的冷卻板 (cold plates )系統、及/或上述組合組合的習知技藝, 藉以完成來自,舉例來說,積體電路裝置的熱捕捉、移除、 及拒纟巴。這類習知的熱能管理設計乃是將這些熱捕捉及拒絕 元件&置於這個積體電路裝置包裝的上方或附近。(請參 照’舉例來說,美國專利號碼⑽“ 9 1 945 &US6 2855 5 0。) 舉例來說’請參考第1圖,散熱裝置通常會包括具有直 尾翅的金屬板’藉以利用自然對流將熱能由這個消耗裝置傳 送至周圍氣體。散熱裝置通常會直接設置或放置在這個積體 電路裝置包裝的上方。散熱裝置乃是用來增加這個裝置及周 圍氣體的接觸面積,藉以降低給定功率的溫度上升。1239438 V. Description of the invention (3) It is used to convert a specific supply temple of a convenient source ^, / 媪, and η 十, and the application voltage should be converted to an appropriate form, and the right supply is used as an example. 14% of the accumulated snow, ^, the device is consumed when the connection is repeated. In many examples, the dead power circuit will provide a single phase ramp, 11nv, pull + flat ^ relative A voltage (for example: 48V DC or 9 'integrated circuit device can require very different Supply voltage (for example: 丨 to 衣 n clothes, toilet 乂 乂 乂 gt gt 赭 赭 赭 赭 笼 π π, 认 ^ 1 to 5V DC). In this case, narrowing can change this Power and willingness to offer cold. Public ", the system in the system / converter is installed as close to this consumer device as possible, to provide stable power during the power consumption fluctuations generated by the I: For example, US patent numbers US59 0 1 040; US6191945 and US6285550.)-In addition to power considerations, the increased power consumption of these devices will also affect the thermal management system (ie, capture and / or reject thermal energy). System) is a burden. In view of this, the thermal energy management system will use a system such as a heat sink, a fan, a cold plates system using cooling water, and / or a combination of the above. To complete the know-how From, for example, thermal capture, removal, and rejection of integrated circuit devices. This type of conventional thermal management design is to place these thermal capture and rejection components & in this integrated circuit device package Above or near. (Refer to 'for example, US Patent No. "9 1 945 & US6 2855 50." For example', please refer to Figure 1. The heat sink usually includes a metal plate with straight tail wings. 'By using natural convection to transfer thermal energy from this consumer to the surrounding gas. The heat sink is usually placed directly on top of the package of this integrated circuit device. The heat dissipation device is used to increase the contact area of the device and the surrounding gas, thereby reducing the temperature rise of a given power.

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加 乃是共 馬達驅 裝置内 散熱裝 習 乃是降 術通常 間的層 專利號 強系個散熱裝 I _ ^ _ 同利用-個鼓風機(典型地奴:2熱傳輪的-種技術 動)及一個散熱裝置。鼓風機^轉莱片乃是利用電子 部、利用比自然對流更快的速度;^氣體在這個散熱 置及其周圍氣體間的熱傳輪。X机、,精以加強某個 知系統用來加強這個熱能管理 低這個消耗裝置及這個散埶妒置;二匕f的另-種技術 會牵涉到這個裝置、這個裝、的;,這種技 碼US6 1 9 1 945 及US6285550 積數目及層積厚度縮減。(請炎;個散熱裝置 、明參照,舉例來說,美國 總而言之’習知系統乃是 捉、拒絕元件盡可能地設置於 滿足功率調整及熱能管理的需 所示之典型、習知佈局。請參 一個積體電路裝置。這個熱能 耗裝置的散熱裝置。在部分實 (經由這個散熱裝置)係相對 =時將這些功率調整及熱捕 這個積體電路裝置附近,藉以 求。這種做法會導致如第1圖 f第1圖,這個消耗裝置乃是 官理元件乃是一個接觸這個消 施例中’熱捕捉、移除及拒絕 為T%。 、交流 玫置於 電路裝 砵足部 習知技 $消耗 再者,這個功率調整電路(電容器、電壓調整器 直流(AC - DC )及直流直流(DC - DC )轉換器)則是 這個消耗裝置旁邊,藉以降低這個供應器及這個積體 置間的線長。 雖然這類習知功率調整及熱能管理技術確實能夠 分現有裝置的功率消耗及熱捕捉、拒絕需求,然而, 術亦可能無法同時滿足其他現有裝置及未來裝置的功Jonathan is a heat sink in the common motor drive device. The patent number of the common layer is a heat sink I _ ^ _ same use-a blower (typically slave: 2 heat transfer wheels-a kind of technology) And a heat sink. The blower ^ turn sheet is the use of electronic parts, using a faster speed than natural convection; ^ heat transfer gas between the heat sink and the surrounding gas. The X machine is used to strengthen a certain knowledge system to strengthen the thermal energy management, reduce the consumption device and the dissipate jealousy; another technology of the second dagger will involve this device, this device, and this kind of Codes US6 1 9 1 945 and US6285550 reduce the number of layers and the thickness of the layers. (Please inflammation; a heat sink, a clear reference. For example, in the United States in general, the "knowledge system" is to capture and reject components as much as possible to meet the needs of power adjustment and thermal management. The typical and known layout is shown. Please Refer to an integrated circuit device. The heat dissipation device of this thermal energy consumption device. When part of the actual (via this heat dissipation device) is relatively =, adjust these power and thermally capture the vicinity of this integrated circuit device, to achieve this. This approach will lead to As shown in Figure 1f and Figure 1, this consumption device is an official component or a contact. In this embodiment, the heat capture, removal, and rejection are T%. In addition, the power adjustment circuit (capacitor, voltage regulator DC (AC-DC) and DC-DC (DC-DC) converter) is next to the consumer device, so as to reduce the power supply and the integrated device. Although this kind of conventional power adjustment and thermal energy management technology can indeed divide the power consumption and heat capture and reject demand of existing devices, however, the technology may not Meet future power devices and other conventional means

第11頁 1239438 五、發明說明(5) 及熱捕捉、移除、拒絕的預期增加。 的便是提出-種新穎的功率調整技術:本毛明的-個目 耗及熱捕捉、移除、及/或的;”時適綱 另外,本發明的一個目的乃:2預期增加。 及埶能瞢理枯術—7 n +乃疋k七、一種改良的功率調整 及…此s理技術,猎以同時適應現有及 及熱捕捉、移除、拒絕需求的增加 的功率4耗 的乃县裎很一括并ώ , 曰刀 冉者,本發明的一個目 的2疋k供-種改良的功率調整及熱能管 可貫施於空間限制應用裝置(舉 $何精乂用在 裝置。魷舲而山 ,^ π 牛例木祝,可攜式電腦)中的 敎捕捉’、拒,二杜f 一個目的乃是將這些功率調整及 滿足功率消耗及熱捕捉、移;;積中、並且同時 另外,本發明的一個Ϊ:乃;;;求:預期增加。 及埶插妇 tow# 的乃疋^供一種改良的功率調整 …捕捉、拒、、、巴技術,藉以將這些功敕 元件與這個消耗裝置(舉例來二正及”、、捕捉、拒、、,巴 :於二傳遞延遲所生的功率調整缺陷、降低 田於物理为隔及額外介面所生、由這Page 11 1239438 V. Description of the Invention (5) and the expected increase in heat capture, removal, rejection. What is proposed is a novel power adjustment technology: this Maoming's-eye consumption and heat capture, removal, and / or; "time appropriate" In addition, one object of the present invention is: 2 expected increase. And埶 能 理 枯 术 -7 n + Nai k Seven, an improved power adjustment and ... This s technology, hunting to adapt to the existing and increase the power of thermal capture, removal, rejection requirements at the same time 4 consumption is The county government is very comprehensive, and it is called Ran Ran. An object of the present invention is to provide an improved power adjustment and thermal energy tube that can be applied to space-restricted application devices. And Shan, ^ π Niu Liumuzhu, portable computer) in the capture of the 拒 ', rejection, Erdu f one purpose is to adjust these powers to meet power consumption and heat capture, shift; in the product, and at the same time In addition, one aspect of the present invention is: ;;;;: Expected to increase. And the insertion of the woman tow # is provided for an improved power adjustment ... capturing, rejecting, ... This consumption device (for example, two positive and ",, capture, rejection ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Transmitting power adjustment delay born defects, decrease of physical fields and additional interface compartment born by this

:熱阻抗。如此’這個系統的 :;‘力、J 體效率便可以同時提升。 千门正及熱此官理旎力的整 另外’本發明的一個目的 架構堆疊的熱捕捉、拒絕元:乃;=率調整及利用緊密 且加強:二壯 信號傳遞延遲所生的功率調整缺陷、並 加強足個包裝裝置的熱屬性。 褒置再U:這類習知功率調整技術可能適用於部分應用 裝置“明的一個目的乃是提供一種功率調整技術,藉以: Thermal impedance. So ‘this system’: ‘force and body efficiency can be improved at the same time. Qianmen Zhengzheng's enthusiasm for the integration of the thermal capture and rejection elements of the present invention is a stack of the object architecture: the rate adjustment and the use of tight and enhanced: power adjustment defects caused by the two strong signal transmission delay , And strengthen the thermal properties of a full packaging device.再 Setting U: This kind of conventional power adjustment technology may be suitable for some applications. One of the purposes of the device is to provide a power adjustment technology.

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五、發明說明(6) 滿足所有應用裝置中功率消耗的預期辦 明的一個g的乃是提供一種改良的功‘"敕二例來,,本發 可實施於空間限制應用裝置中的裝署 二正術’藉以用在 一個目的乃是提供改良的功率調餐枯 、 本务明的 的預期增加及具有嚴厲空間需求的應用筆^ 、應功率消耗 〔發明 因 整模組 個積體 基底, 於第二 孔,用 第一介 面上的 第二介 面上的 概述〕 應本發明 ,其固定 電路裝置 其具有第 介面。另 以提供電 面上的第 對應介面 面上的第 對應介面 的第一個主要特徵,本發明乃 積體電路襄置 的:率。這個功率調整模組: -介面及第二介面,其中,第 外,足個功率調整模組 性連接於第_人I &共有 一组恆I "面及第二介面 *組¥墊’且這些焊墊分別合 焊Γ卜’ $個功率調“ 塾’且這些焊塾會分別 是一個 整欲施 有一個 一介面 複數個 間,以 連接至 組亦具 連接至 功率調 加至這 半導體 係相對 介面穿 及置於 第一介 有置於 第二介 其置於一個半導 裝置的功率。這 上、或同時置於 一個電壓調整器 另外,這個功率調整模組更具 體基底内,用以調整欲#路 個電路可以置於第一介 積體電 兩個介面上。另抓丄 力夕卜’ 11個電路争且古 及至少一個電容器。 更八有至 因應本發明這個特禮 亦具有置於第二介面上备 =個實施例,這個功率調整模組 少一個功率焊墊及置於這個半導V. Description of the Invention (6) One of the requirements that satisfies the expected power consumption in all application devices is to provide an improved function. &Quot; Twenty two examples, the present invention can be implemented in devices in space-restricted application devices. The purpose of the Department of Orthopedics is to provide an improved power supply, an expected increase in the number of tasks, and an application pen with severe space requirements. For the second hole, the second interface using the first interface is summarized.] According to the present invention, the fixed circuit device has a first interface. In addition, in order to provide the first main feature of the corresponding interface on the electrical interface, the present invention is based on integrated circuits: rate. This power adjustment module: -Interface and second interface, of which, the first and second power adjustment modules are connected to the first_person I & a total of a constant I " surface and the second interface * set \ pad ' And these pads are welded together, and each of these pads will be a single power interface with a plurality of interfaces, which are connected to the group and also connected to the power controller. The power of the opposite interface is placed on the first interface and placed on the second interface and placed on a semiconducting device. This, or at the same time, is placed on a voltage regulator. In addition, this power adjustment module is in a more specific substrate. To adjust the circuit, the first circuit can be placed on two interfaces of the first dielectric body. Another circuit can be used for 11 circuits and at least one capacitor. It is also possible to respond to this special gift of the present invention. There are two embodiments on the second interface. This power adjustment module has one less power pad and is placed on the semiconductor.

1239438 五、發明說明(7) 體基底中的至少一個功率穿孔。這個功率穿孔係電性連接這 個功率焊塾,用以提供電性連接於第二介面及這些電壓調整 器及電谷器之至少一者間。另外,這個功率穿孔亦 < 以電性 連接至置於這個半導體基底中的一個功率導管。這個功率焊 墊、牙孔、‘管的組合乃是用來提供電性連接於第二^介面及 這些電壓調整器及電容器之至少一者間。 在另一個貝;5也例中’這個功率調整模組亦可以異有至少 一個輸出功率導管,其耦接至這個電路,用以提供調整功率 至這個積體電路裝置。這個輸出功率導管可以連接置於第一 介面上的一個輸入功率。並且,這個輸入功率乃是對應於這 個積體電路裝置的一個輸入。 因應本發明的這個特徵,這個功率調整模組亦町以具有 一個電流感應器,其置於這個半導體基底中,'用以提供表示 這個積體電路裝置及/或這個電路的電流消耗的資訊。另 外,一個控制器,其耦接這個電流感應器,亦可以接收這個 資訊,並藉以調整這個積體電路裝置及/或這個功率調整模 另外,這個功率調整模組 其置於這個半導體基底中,用 近區域的溫度的資訊。另外, 感應器,亦可以接收這個資訊 置及/或這個功率調整模組的 亦可以具有一個溫度感應器, 以提供表示這個溫度感應器附 一個,制器,其耦接這個溫度 ,亚藉以調整這個積體電路f 冷卻。 衣 因應本發明的第 整及熱能管理模組, 一個主要特徵,本發明乃是一 用以耗接一個積體電路裂置。 個功率調 個功率1239438 V. Description of the invention (7) At least one power perforation in the body substrate. The power hole is electrically connected to the power welding pad, and is used to provide electrical connection between the second interface and at least one of the voltage regulator and the valley device. In addition, the power via is also electrically connected to a power conduit placed in the semiconductor substrate. This combination of power pads, perforations, and tubes is used to provide electrical connection between the second interface and at least one of these voltage regulators and capacitors. In another example, the power adjustment module may also have at least one output power conduit that is coupled to the circuit to provide adjustment power to the integrated circuit device. This output power conduit can be connected to an input power placed on the first interface. And, this input power is an input corresponding to this integrated circuit device. In response to this feature of the invention, the power adjustment module also has a current sensor which is placed in the semiconductor substrate and is used to provide information indicating the current consumption of the integrated circuit device and / or the circuit. In addition, a controller that is coupled to the current sensor can also receive this information and adjust the integrated circuit device and / or the power adjustment module. In addition, the power adjustment module is placed in the semiconductor substrate. Use the temperature information of the near area. In addition, the sensor can also receive this information and / or the power adjustment module can also have a temperature sensor to provide an indication that the temperature sensor is attached to a controller, which is coupled to the temperature to adjust the temperature. This integrated circuit f is cooled. According to the first integration and thermal energy management module of the present invention, one of the main features of the present invention is that it is used to dissect an integrated circuit. Power adjustment

1239438 五、發明說明(8) 調整,熱能管理模組具有一個功率一 面及第二介面,其中,第-介面係:::it ’其具有第-介 這個功率調整元件亦具有-個半導體ΐ於弟ΐ介面。另外 孔,其置於這個半導體基底中,以ς底,禝數個介面穿 至這個積體電路裝置的功率。這個=路,帛以調整欲施加 整器及至少一個電容器。另外 J具有至少-個電壓調 率調整元件的第一介面上、入電路亦可以置於這個功 介面上。 —"面上、或同時置於這兩個 口應本發明的這個特徵,這 更可以具有一個埶能管理元#1 ^旱凋正及熱能官理模組 面,盆中,第ζΓΓ 其具有第一介面及第二介 件,;:作工:介面?:對於第二介面。這個熱能管理‘ 另外,这個埶处—乃疋用—個具有液相的流體捕捉埶能。 係具有置於其中的一個微通、f h基纟#中’這個基底 流體經過。 通遏的至少-部分、並架構以允許 另外,這個熱能管理模組亦可以具有 用以提供電性連接於這個埶炉其棰-放t,要文個"面牙孔’ 咬伐孓坆個熱此官理兀件的第一介面及第—人1239438 V. Description of the invention (8) Adjustment. The thermal energy management module has a power side and a second interface. Among them, the first interface is: :: it 'It has the first interface and this power adjustment element also has a semiconductor. Brother-in-law interface. In addition, a hole is placed in the semiconductor substrate to pass through several interfaces to the power of the integrated circuit device. This = way to adjust the regulator and at least one capacitor to be applied. In addition, J has at least one first interface of the voltage adjustment element, and the input circuit can also be placed on this interface. — "The surface, or both of these mouths, should be in accordance with this feature of the present invention, which can even have an energy management element # 1 ^ Drought and heat management module surface, in the basin, Has a first interface and a second interface ;; work: interface? : For the second interface. This thermal energy management, ‘in addition, this place—that is, with a fluid with a liquid phase—captures energy. The system has a microfluid placed in it, which is the base fluid. At least-part of the containment, and structure to allow in addition, this thermal energy management module may also have an electrical connection to provide electrical connection to the oven-put t, a "face hole" bite cutting The first interface and the first one that are popular

S 。外,這個熱能管理元件的複數個介面穿孔 W 連接至這個功率調整元件的對應介面穿孔,用二2「別 接於這個功率調整元件Μ帛 ^ ^ /、笔性連 -入品叫Γ 仵的弟一介面及廷個熱能管理元件的楚 -,,面間。就此而言,這個熱能管理 的第 理連結5這個,力率調整元件的第二介面。的弟…以物 另外,迠個功率調整及熱能管理模組亦可以且 微通道結構。這個電路乃e罟於_加/、有電路及一個 、们冤路乃疋置於廷個半導體 第15頁 1239438 五、發明說明(9) 整欲施加至這個積體電路裝置的功率。這個電路可以置於第 一介面上、置於第二介面上、或同時置於這兩個介面上。另 外,這個電路具有至少一個電壓調整器及至少一個電容器。 這個微通道結構具有至少一個微通道,其置於這個半導體其 底中,用以捕捉熱能。 土 因應本發明的這個特徵, 亦可以具有一個電流感應器、 器。這些電流感應器、溫度感 個功率調整及熱能管理模組中 流感應器及/或溫度感應器, 訊,並藉以利用這個微通道結 言’這個控制器可以調整這個 個哪筒輸出的流體流率。 這個功率調整及熱能管理模組 一個溫度感應器、及一個控制 應器及/或控制器可以置於這 。這個控制器可以耦接這些電 用以接收電流或溫度指示資 構调整熱能捕捉速率。就此而 微通道中的流體流動及/或這 —因應本發明這個特徵的一個實施例 能管理模組會具有置於笛- 少-個功率穿孔!J弟一,1面上的至少一個功率焊墊及 孔,用功率焊塾係電性連接至這個功率穿 器之至少一者門。連妾於弟二"面及這些電壓調整器及電 導官,其置於這個丰邋触甘—丄 , ^ ^ 個功 連接於這個功率^基底中。這個功率導管係'提供電 間。 于塾及這些電壓調整器及電容器之至少一 在另一個實施例中,這 有至少一個輸出功率導管 整功率至這個積體電路i置 個功率δ周整及熱能管理模組會具 其Μ接至這個電路,用以提供調 。這個輸出功率導管可以連接至S. In addition, the plurality of interface perforations W of the thermal energy management element are connected to the corresponding interface perforations of the power adjustment element. Use two 2 "do not connect to this power adjustment element M 帛 ^ ^ /, pen connection-the product is called Γ 仵The first interface of the brother and the thermal management element of the thermal energy management unit, the surface. In this regard, the first principle of this thermal energy management is connected to the second interface of the power rate adjustment element. The younger ... The adjustment and thermal management module can also have a micro-channel structure. This circuit is used in _plus /, there is a circuit and one, we are not in the right way, and it is placed on the semiconductor, page 15 1239438 V. Description of the invention (9) The power to be applied to this integrated circuit device. This circuit can be placed on the first interface, the second interface, or both interfaces. In addition, this circuit has at least one voltage regulator and at least A capacitor. The micro-channel structure has at least one micro-channel, which is placed in the bottom of the semiconductor to capture thermal energy. The earth may also have a current sense according to this feature of the invention These current sensors, temperature-sensing power adjustment and thermal management modules, current sensors and / or temperature sensors, and use this micro-channel to conclude, 'This controller can adjust which tube this output Fluid flow rate. The power adjustment and thermal management module can be placed here with a temperature sensor and a control reactor and / or controller. This controller can be coupled to these electricity to receive current or temperature indication. Thermal energy capture rate. At this point the fluid flow in the microchannel and / or this—an embodiment corresponding to this feature of the present invention can manage the module will have a perforation-less-a power perforation! At least one power pad and hole are electrically connected to at least one door of the power penetrator with a power welding pad. Li Dian Yu's face and these voltage regulators and conductance officers are placed in this abundance Touch Gan-丄, ^ ^ work is connected to the power ^ base. This power conduit system 'provides electrical room. Yu and at least one of these voltage regulators and capacitors are implemented in another In the example, there is at least one output power duct. The full power is set to the integrated circuit. A power δ cycle and thermal management module will have its M connected to this circuit to provide regulation. This output power duct can be connected to

第16頁 1239438 五、發明說明(10) —個輸入功率焊墊,其置於這個功率 _ 上。另外,廷個輪入功率焊墊可以對應=件的第一介面 的功率輸出。 % ;見個積體電路裝還 〔較佳實施例的詳細說明〕 本發明乃是有關於一種調整消耗 積體電路裝置)欲施加功率的技術及x 牛例來說,一個 術及系統乃是藉著堆疊這個功率調整雷敗二士發明的這種技 上方或下方,藉以對這個消耗裝置的轸二,個消耗電路的 :最佳化或加強。本發明的幾個實施;係γ的功率調整進 :=裝置中’諸如:可攜式或手持式應用5置於f間限制的 這些實施例便可以提供應。藉此, 攻益的功率調整系統。 Μ *縮減體積)、成 率,22Ϊ明亦是有關於一種調整消耗裝置欲施加功 電路^ J消耗裝置熱捕捉、移除及/或拒絕及功率調 應用壯支術^系統。本發明的這種技術及系統乃是因應這 =衣置的環境限制(舉例來說)及這個消耗裝置及系統 :_ ’對功率調整及熱能管理能力進行最佳化或加強。就 而° ’在幾個實施例中,本發明的這種技術及系統亦可以 用於空間限制的應用裝置,1 會需要高度熱捕捉、. 巴能力。另外,這些實:二㈣及系統亦可格 哼:合功率調整電路及熱能管理元件於相同的基底中、具 a以足跡(footprint )的基底中、及/或這個消耗裝置的 1239438Page 16 1239438 V. Description of the invention (10)-An input power pad is placed on this power _. In addition, this wheel-in power pad can correspond to the power output of the first interface of the piece. %; See the integration of integrated circuits [the detailed description of the preferred embodiment] The present invention is about a technology for adjusting and consuming integrated circuit devices) To apply power and x, for example, a technique and system are By stacking this power, you can adjust the above or below of the technology invented by Thunderbolt, so as to the second one of this consumer device, one of the consumer circuits: optimization or enhancement. Several implementations of the present invention; the power adjustment of γ into the == device, such as: portable or handheld applications 5 placed between f limits These embodiments can provide applications. Take advantage of this power-adjusted system. (M * reduced volume), yield, 22% is also related to an adjustment of the consumer device to apply work circuit ^ J consumer device thermal capture, removal and / or rejection and power adjustment application of strong support system. This technology and system of the present invention is based on the environmental constraints of the clothing (for example) and this consumer device and system: _ 'to optimize or strengthen the power adjustment and thermal energy management capabilities. However, in several embodiments, the technology and system of the present invention can also be used in space-constrained applications. 1 will require a high degree of heat capture. In addition, these realities: the two systems and the system can also be hum: the combined power adjustment circuit and thermal energy management components are in the same substrate, a substrate with a footprint, and / or 1239438 of this consumer device

整及熱能管理系統便可 调整及熱能管理技術 元件的實施例,其具有 來說,溫度、壓力或产 筒的流體流動、或調^ 微通道結構中的流體流 五、發明說明(11) 基底中。藉此,這些 以提供有效、緊密、 本發明亦具有利 一個控制器以接收參 動)的回授信號,並 一個熱捕捉、移除及 動。 另外’本發明亦 ’肖耗裝_置及/或這個 控制器。這個控制器 置及/或功率調整電 元件的熱捕捉、移除 筒提供工作流體以捕 整這個唧筒的的流體 動’藉以滿足這個消 率消耗變動所生的預 為進一步降低這 跡’這些熱能管理元 用基底或結構。就此 微通道結構以捕捉及 電路的熱能。 另外,本發明乃 多句設置或排列以依據 功率調整能力加強或 實施例的功率調 成本效益的功率 用一個熱能管理 數感應器(舉例 據以調整一個π即 /或拒絕元件的 可以利 功率調可以, 路的熱及/或 捉及移 流動、 耗裝置 期熱能 個功率 件可以 而言, 移除這 用一個電 整電路的 因應這個 產生變動 拒絕能力 除熱能時 或調整這 及/或這 管理。 調整及熱 與這個功 這些熱能 個消耗裝 流感應器提供表示這個 電流消耗的資訊至一個 資訊,預期這個消耗裝 、亚調整這些熱能管理 。舉例來說,當利用唧 ,這個控制器便可以調 些微通道中的流體流 個功率調整元件因應功 旎管理系統呈現的足 率調整模組整合至一共 管理元件可以利用一個 置及/或這個功率調整 t 是提供一種功率及熱能管理模組,豆 ,個系統的需要或需求,有效地將這: 取佳化。另外,本發明這個功率及熱能An embodiment of a thermal energy management system that can adjust and thermal energy management technology elements, which includes, for example, temperature, pressure, or fluid flow in a production tube, or fluid flow in a microchannel structure. 5. Description of the invention (11) Base in. In this way, these provide an effective, compact, and feedback signal for the present invention that also uses a controller to receive the parameters, and a heat capture, removal, and motion. In addition, the present invention also includes a controller and / or the controller. This controller sets and / or adjusts the heat capture of the electrical components and removes the barrel to provide working fluid to trap the fluid dynamics of the barrel 'to meet the expectations of this consumption rate change to further reduce this trace' these thermal energy Management base or structure. In this regard, the micro-channel structure is used to capture the thermal energy of the circuit. In addition, the present invention is a multi-sentence arrangement or arrangement to strengthen or adjust the cost-effective power according to the power adjustment capability of the embodiment. A thermal energy management number sensor (for example, to adjust a π, that is, or reject a component, may facilitate power adjustment. Yes, the road's heat and / or capture and transfer flow, and the power consumption of the device during the installation period can be considered, remove this with an electrical circuit in response to this change in capacity to reject heat or adjust this and / or this management Adjustment and heat and this function These thermal energy consumption flow sensors provide information indicating the current consumption to a piece of information. It is expected that the consumption energy and sub-adjustment of these thermal energy management. For example, when using 唧, this controller can Adjust the fluid flow in some micro-channels. A power adjustment element is integrated into the total management element in response to the power rate adjustment module presented by the power management system. A power and thermal adjustment module can be used to provide a power and thermal energy management module. The needs or requirements of a system effectively optimize this: In addition, the present invention This power and thermal energy

第18頁 1239438Page 18 1239438

五、發明說明(12) =里^組的設置或排列可以將這個系統的熱捕捉、 ^巨=能力加強或最佳化。就此而言,這些功率 _、 ‘、、、能管理元件的彼此或與這個消耗 :正兀 j以將這個熱能管理元件及功4= 二==置: ::情況下’本發明可以實施多於—個的熱能管理: 以進一步加熱捕捉及拒絕能力,直可以牛 件精 ‘舉例來說’這個功率管理模組及這個消耗。統 請參考第2、3及4圖,在一個實施例 個功率調整模組100,其可以置於裝置_ (舉例來:乃疋一- ,體電路裝置,諸如:—個微處理器)及印刷電路板糊 (如第3圖所示)之間、或置於穿詈2 ί如筮4闰% - λ日日乂直於裝置200及熱能管理模組300 (士第4圖所不)之間。功率調整模組1〇〇,相對於 200&及熱能管理模組30 0,的位置可以因應系統1〇〇:率、、 熱此及空間考量加以選定。 入而功率調整模組1〇0係包括一個半導體基底100、 二1 )=至104h、介面焊墊106an〇6p、功率及地點穿 孔108a及108b、功率及地點焊墊11〇a&11〇b、及 k個半,體基底102具有第-介面,用以與裝置2⑽匹配或介 面二及第二介面,用以與基底或電路板4 〇 〇 (舉例來說,一 個系統印刷電路板,諸如··一個主機或子機板)匹配或介 面。 〆 這個半導體基底1〇2可以利用數種已知材料製作,舉 來說:矽或鍺。在特定情況中,吾等使用的材料最好能夠與 第19頁 1239438 五、發明說明(13) 装置200的基底相同、或能夠具有類似的特性(舉例 熱擴展)。這種架構可以提供加強的操作可靠性,° ’ 調整模組100及裝置200的類似熱擴展特性可以將功率調 ,〇〇及裝置200間的電性連接缺陷的電位最小化, =操作期間、因為熱擴展係數的差異而產生。另外疋 =材料亦可以具有相同製作技術及設施/設備的 /目 而潛在地降低製造成本。 处進 這些介面穿孔10“至10411乃是用來提供裝置2〇〇利用 二=的電性連接’ 4旦是卻不會提供給功率調整模組⑽ 丄進行日調整裝置2G0的功率調整。就此而,,功率調整模J 士乃^用來提供裝置200利用的其他信號的電性互連,諸 器。梦及位址信號。舉例來說,當裝置2〇〇是-個微處理 1〇〇在日I個介Λ穿孔mail〇4h可以,、經由功率調整模組 (Dram個试處理盗及,舉例來說,動態隨機存取記憶體 -個電跋或Ϊ態隨機存取記憶體(SRAM )記憶體裝置間提供 情體(πρ路徑。如此,系統1 〇 (舉例來說,動態隨機存取吃 的C或靜態隨機存取記憶體(關)記憶體裝置) 經由玄號便可以利用印刷電路板400上的信號執跡, 至裝U整模組⑽,利用介面穿孔⑽“1。4行進至傳遞 作。Z :"面穿孔1〇“至10411可以利用習知處理技術加以製 利用置2〇〇上行進或傳遞的信號數目很大時,吾等最好 徑中=非等向性蝕刻在基底102中形成窄路徑,並在這些路 /L積(舉例來說,利用化學氣相沈積法(VCD )或低 1239438 、發明說明(14) 化學氣相沈積法(LPCVD)技術)一個高導電性材料( 如:金、銅、鋁)或高摻質複晶矽,藉以製作一高導電性互 連。 接者,請繼續參考第2圖,這個實施例的功率 更可以包括介面焊墊10仏至10613,藉以在功 1〇〇及裝置200或電路板40〇間促進更大的導電性。=、,且 言’這些介面焊塾106aM〇6p可以在匹配或介面功而 組1〇〇與電路板40 0及/或裝置200時提供更大的容忍度。正拉 些介面烊墊1G6U1()6p可以利用習知技術,經由高^ ϋ:ΐ如金、銅、鋁)完成製作。在-個較佳實施例中, 二::孔,至104h及介面焊墊106a至1061)最好能夠利用相 枓。事實上,焊墊106&至106]3可以利用球格陣 才 2晶片尺規包裝(CSP)纟置所利用的相同或類似方\ 材枓完成製作。這個術語"焊墊",如中 格陵而丨,DP Λ、 « 1 ^ 々疋利用球 利、,尺規包裝(CSP) '及諸如此類裝置所 〜用的球形(b a 1 1 )連接技術。 請繼續參考第2圖’㈣調整模組⑽亦可以包括 古地點穿孔108a及108b,藉以提供一個供應電壓、供應帝 =參考電壓、及/或地點(供應)電壓至電路nV# 2 =點穿孔l〇8a及10813可以利用與介面穿孔ι〇 1〇让 相冋的方法加以設計及製作。 應該注意的是,雖然本發明僅介紹兩個功率及 匕功:是熟習此技藝者當能夠視需要及其他條件而增加額外 力率及地點穿孔。另外’應該注意的是,功率及地點穿孔5. Description of the invention (12) The setting or arrangement of the ^^ group can enhance or optimize the heat capture and ^ = ability of this system. In this regard, these power _, ',,, and other components can manage the consumption of each other or with this: the right j to set this thermal energy management component and work 4 = two = = set: :: case' The present invention can be implemented more In terms of thermal management: To further heat capture and rejection capabilities, you can use the power management module and consumption for example. Please refer to FIG. 2, FIG. 3 and FIG. 4 collectively. In one embodiment, a power adjustment module 100 can be placed in a device (for example: Nai Yi-, a body circuit device, such as: a microprocessor) and The printed circuit board paste (as shown in Figure 3), or placed in the penetrating hole 2 筮 4 筮%-λ day is straight to the device 200 and the thermal management module 300 (not shown in Figure 4) between. The position of the power adjustment module 100, relative to 200 & and the thermal energy management module 300, can be selected according to the system's 100: rate, thermal and space considerations. The power adjustment module 100 series includes a semiconductor substrate 100, 2 1) = to 104h, interface pads 106an〇6p, power and location perforations 108a and 108b, power and location pads 11〇a & 11〇b And k halves, the body substrate 102 has a first interface to match the device 2⑽ or an interface two and a second interface to the substrate or circuit board 400 (for example, a system printed circuit board such as ·· A master or daughter board) matching or interface.半导体 This semiconductor substrate 102 can be made from several known materials, for example: silicon or germanium. In certain cases, the materials we use should preferably be the same as the base of page 19 1239438 V. Description of the invention (13) The device 200 can have similar characteristics (for example, thermal expansion). This architecture can provide enhanced operational reliability. Similar thermal expansion characteristics of the adjustment module 100 and the device 200 can minimize power adjustment, and minimize the potential of electrical connection defects between the 00 and the device 200. = During operation, It is caused by the difference in thermal expansion coefficient. In addition, 疋 = materials can also have the same manufacturing technology and facilities / equipment / purpose, potentially reducing manufacturing costs. These interface perforations 10 "to 10411 are used to provide the electrical connection of the device 200, which will not be provided to the power adjustment module 旦 丄 for the power adjustment of the day adjustment device 2G0. However, the power adjustment module J Senai is used to provide electrical interconnection of other signals utilized by the device 200, dreams, and address signals. For example, when the device 200 is a micro-processing device 10 〇 In the day I perforated mail 〇 4h can, through the power adjustment module (Dram test processing stealth and, for example, dynamic random access memory-a power post or Ϊstate random access memory ( SRAM) provides the emotion (πρ path) between the memory devices. In this way, the system 10 (for example, dynamic random access memory C or static random access memory (off) memory device) The signal trace on the printed circuit board 400 is installed to the entire U module, and the interface perforation ⑽ "1.4 is advanced to the transmission operation. Z: " The surface perforation 10" to 10411 can be produced by conventional processing techniques. When the number of signals transmitted or transmitted by using 2000 is large Our best path = anisotropic etching to form a narrow path in the substrate 102, and the product / L of these paths (for example, using chemical vapor deposition (VCD) or low 1239438, invention description (14) Chemical Vapor Deposition (LPCVD) technology) A highly conductive material (such as: gold, copper, aluminum) or highly doped polycrystalline silicon to make a highly conductive interconnect. For further details, please refer to Figure 2 The power of this embodiment may further include the interface pads 10 仏 to 10613, so as to promote greater conductivity between the work 100 and the device 200 or the circuit board 40. =, and say 'these interface pads 106aM 〇6p can provide greater tolerance when matching 100 or circuit board 400 and / or device 200. Pulling some interface pads 1G6U1 () 6p can use the conventional technology through high ^ (ϋ: such as gold, copper, aluminum) is completed. In a preferred embodiment, 2 :: holes, to 104h and interface pads 106a to 1061) are best able to use phase. In fact, pads 106 & To 106] 3 can use the same or the same type as the two-chip ruler package (CSP) set used by the ball grid array. Fang \ Material is completed. The term " solder pad ", such as Zhongge Linger, DP Λ, «1 ^ 々 疋 uses the ball, the ruler packaging (CSP) 'and other such devices ~ Spherical (ba 1 1) connection technology. Please continue to refer to Figure 2 '㈣Adjustment Module' may also include ancient site perforations 108a and 108b to provide a supply voltage, supply = reference voltage, and / or location (supplied) Voltage to circuit nV # 2 = point perforation 108a and 10813 can be designed and manufactured by using a method that intersects with the interface perforation 107. It should be noted that although the present invention only introduces two powers and daggers: those skilled in the art should be able to add extra power and location perforation as needed and other conditions. In addition, it should be noted that the power and location of the perforation

第21頁 1239438Page 12 1239438

l〇8a及108b亦可以提供電路112需要的其他電壓 ^ 以報及文中所述的功能或其他想要的功能。 机,猎 這個功率調整模組i 〇 〇亦可以具有功率及地點帛塾】i 〇 a 及100b,藉以加強功率調整模組100及印刷電路板400 電性。這些功率及地點焊墊11〇3及1113 ’與介面焊墊1〇仏至 106p相同,乃是在匹配或介面功率調整模組1〇〇及電路板4〇〇 牯提供更大的容忍度或不匹配。另外,這些功率及地點焊墊 11〇3及11〇1)亦可以利用與介面焊墊1063至1〇613相同方 以設計及製作。 這個功率調整模組100亦可以包括電路112。這個電路 112乃是用來將調整功率傳送至裝置2〇〇。特別是,電路η 2 可以提供裝置2 0 0所需要的電壓參數(舉例來說,供應電壓 及地點)及電流參數(舉例來說,供應、峰值及典型操作電 流)的適當調整,藉以使裝置2 〇 〇可利用的電壓及電流能夠 在’ f例來說,正常操作、啟動及/或關閉期間,落於適當 及可靠操作所需要的範圍及容忍度。這個電路丨1 2亦可以具 有電壓調整器、旁路電容器、直流直流(DC —DC )轉換器、 及/或父流直流(A C — D C )轉換器,其可以利用習知技術及 設計(舉例來說,習知的互補式金氧半電晶體(CMOS )或雙 極性電晶體(BJT )設計及製作技術)加以排列、架構、設 計及互連。這些元件的簡界概述已在發明背景中介紹,並因 簡易考量而不再予以重述。 重要的是,藉著設置電路112,諸如:裝置2〇〇旁邊的電壓調 整為、旁路電容器、亞鐵焊珠、直流直流(D〆p C )轉換108a and 108b can also provide other voltages required by the circuit 112 to provide the functions described in the report or other desired functions. Machine, hunting This power adjustment module i 〇 〇 can also have power and location 帛 塾] i 〇 a and 100b, so as to strengthen the power of the power adjustment module 100 and the printed circuit board 400. These power and location pads 1103 and 1113 'are the same as the interface pads 10 仏 to 106p, but they provide greater tolerance in the matching or interface power adjustment module 100 and the circuit board 400 牯. Mismatch. In addition, these power and spot pads 1103 and 1101) can also be designed and manufactured using the same methods as the interface pads 1063 to 10613. The power adjustment module 100 may also include a circuit 112. This circuit 112 is used to transmit the adjustment power to the device 200. In particular, the circuit η 2 can provide appropriate adjustments of the voltage parameters (for example, supply voltage and location) and current parameters (for example, supply, peak, and typical operating current) required by the device 2 0 to enable the device The available voltage and current can fall within the range and tolerance required for proper and reliable operation during normal operation, startup and / or shutdown. This circuit can also have a voltage regulator, a bypass capacitor, a direct current direct current (DC-DC) converter, and / or a parent current direct current (AC-DC) converter, which can use conventional techniques and designs (for example In other words, the conventional complementary metal-oxide-semiconductor (CMOS) or bipolar transistor (BJT) design and manufacturing technology) are arranged, structured, designed, and interconnected. A brief overview of these elements has been introduced in the background of the invention and will not be repeated for simplicity. It is important that by setting the circuit 112, such as: the voltage adjustment next to the device 200, bypass capacitors, ferrous beads, DC-DC conversion

1239438 五、發明說明(16) =、及/或交流直洁L (AC—DC)轉換器,與功率調整的上述 ^便可以滿足。另外,電路i i 2消耗的水平及垂直間隙, =較於第1圖及美國專利號碼US628 5550所示的習知 ΐ右相當程度地降低。另外,將功率調整模組1。〇設、 ^在熱此管理模組300上方或附近亦可以促進功率調整模組 中、電路11 2所生熱能的有效捕捉及拒絕。 第2圖所示的電路112乃是置於基底102的第一介面上 二,個實施例亦可以促進與電力功率及裝置2〇〇的地點輸 所的=。然巾’應該注意的是,電路112亦可以置於第4圖 於:上方。這種架構可以,舉例來說,加強相對 以^率 杈 〇的電路的熱能捕捉及拒絕能力、並且可 性。口強裝置2J0及印刷電路板4〇〇上信號執跡間的信號導電 兩另外第4圖所不的這種架構亦可以適應裝置2 〇 〇的包裝 :/六撿亚ΐ可以降低功率調整模組100及消耗裝置2〇〇間的熱 11 pW弟4圖的實施例亦可以適應功調整模組10〇的電路 11Z的製造限制。 ^ 另外,這個電路112亦可以同時置於第一 加以U裝置200的功率調整需求可以考量功率調整模組100 的η ’ Ϊ是應該注意的是,&了功率調整模組100執行 以利ί 、: ί供濾波功能的額外分離電力功率調整元件亦可 下,:率類似習知系統的方法加以放置。在這種情況 正板組100亚不會執行系統10的全部功率調整功1239438 V. Description of the invention (16) = and / or AC direct-clean L (AC-DC) converter, and the above-mentioned power adjustment can be satisfied. In addition, the horizontal and vertical gaps consumed by the circuit i i 2 are considerably reduced compared to the conventional case shown in FIG. 1 and US Patent No. US628 5550. In addition, the power adjustment module 1 is used. 〇Setting, ^ Above or near the thermal management module 300 can also promote the effective capture and rejection of the thermal energy generated by the circuit 112 in the power adjustment module. The circuit 112 shown in FIG. 2 is placed on the first interface of the substrate 102. The embodiment can also promote the location of electrical power and device 200. However, it should be noted that the circuit 112 can also be placed on the top of FIG. 4. This architecture can, for example, enhance the thermal energy capture and rejection capabilities and reliability of circuits that are relatively fast. The signal between the mouth strength device 2J0 and the signal track on the printed circuit board 400 is conductive. In addition, this structure not shown in Figure 4 can also be adapted to the packaging of the device 2000: / Six pick-ups can reduce the power adjustment mode The embodiment of FIG. 4 with the heat of 11 pW between the group 100 and the consumer device 200 can also be adapted to the manufacturing limitation of the circuit 11Z of the power adjustment module 100. ^ In addition, this circuit 112 can also be placed at the same time as the power adjustment requirements of the U device 200. η 'of the power adjustment module 100 can be considered. It should be noted that & : The additional separated power and power adjustment element for the filtering function can also be placed: the rate is similar to that of the conventional system to place it. In this case, the positive plate group 100 will not perform all the power adjustment functions of the system 10

12394381239438

五、發明說明(17) ΐ件:率模組100僅會配 來勃> 士 ^ 正功此。迫些分離電力功率調整元件可以用 土 ::電壓及電流的啟始及/或附力餐功能。舉例來說用 糸、、先可以利用一個主要功率供應V. Description of the invention (17) File: The rate module 100 will only be equipped with a bleb > Forcing these separate electric power adjustment elements can use the earth :: voltage and current start and / or after meal function. For example, using 糸, you can first use a main power supply

Ik後,則會對裝置2 00的功率提供區域性的功率調敕 中,這個主要功率供應可以提供這個系統Ϊ、 裝置的啟始Λ 圖)在内的複數個 便仍ί b,功率調整模組1〇°的許多優點 卻可能合心敫體;、:的:f額外的分離電力功率調整元件 月b s s力正體糸統的功率調整足跡。 電路112利用的這些參考電壓及電流可以利用多 提供給或繞線至電路1 1 2的A - 74* / 圖,在-個實施例中,這個電例來言兒,請參考第5 點穿孔108a及l〇8b延伸、‘.並二=及11413乃是,功^及地 特定功率調整電路設計所規$ 1 2 ’誠如貫施的 ^ 1 n« ^ 1 nou 斤規疋。在廷個貫施例中,功率及地 (I笛2圖所-、$需要延伸至半導體基底102的整個長度 美广〇iw二,因為功率及地點導管114&及1141)可以在 的連接。這些功率及地點導管ιι“及 二料(舉例來說,金、銅、銘、或高摻 ::例來〜兒H 、亚且利用習知的半導體處理或製作技 # (舉例h 1知的微影、餘刻、及沈積處理)進行沈 1239438After Ik, it will provide regional power adjustment for the power of device 200. This main power supply can provide the system (the starting point of the device, Figure Λ)), b. The power adjustment mode Many of the advantages of group 10 ° may converge on the corpus callosum;, :: f: additional separation of the electric power adjustment element and the bss force of the normal system's power adjustment footprint. These reference voltages and currents used by the circuit 112 can be provided or wound to the circuit A 1-74 * / diagram of the circuit 1 12. In one embodiment, for this electrical example, please refer to point 5 108a and 108b extend, '. And two = and 11413, and the power and ground specific power adjustment circuit design is regulated by $ 1 2' as consistently implemented ^ 1 n «^ 1 nou. In this embodiment, the power and ground (I and II need to be extended to the entire length of the semiconductor substrate 102, because the power and location ducts 114 & and 1141) can be connected at. These power and location conduits and materials (for example, gold, copper, inscriptions, or high doping :: 来 来 ~ 儿 H, and using conventional semiconductor processing or fabrication techniques # (example h 1 known Lithography, Afterglow, and Shenji Processing) Shen 1239438

請參考第6圖,功率及地點導管U4a&n4b的形成亦可 以更加面向半導體基底102的介面(但是仍然位於基底1〇2内 部)。在這個實施例中,功率及地面穿孔1〇8a及1〇讣亦可以 延伸至半導體基底1〇2的整個或幾乎整個長度,由於功率及 地點導管114 a及1 14b會連接至更靠近基底1〇2的介面表面的 電路112。第6圖的這些功率及地點導管丨14a及丨14b可以由功 率及地點穿孔108a及108b延伸(未示於第6圖中)、並且連 接至電路丨12,其亦是製作於基底102的介面附近。這些功率 及地點導管11 4a及11 4b可以利用習知的處理及製作技術、利 用導電材料(舉例來說,金、銅、鋁、或高摻質複晶矽 以製作。 第4及7圖係表示對電路112供應功率及地點的另一種方 法:在這些實施例中,功率及地點乃是利用習知的繞線連結 技術提供給電路1 1 2,其乃是利用第4圖所示的習知繞線丨j 2 及連結焊墊1 2 2。熟習此技藝者當瞭解,經由電路板4 〇 〇 (或 功率供應,圖中未示)對電路丨丨2供應功率及地點的方法還 可以利用許多其他技術。在電路丨丨2上提供功率及地點連接 的所有技術,無論是已知的或是未來發展得到的,均應該屬 於本發明的範圍内。 〜^ 如先前所述,電路11 2乃是利用習知方法調整功率、並 將這個需要功率傳送至裝置2〇〇。這個電路11 2 (舉例來說, 電壓調整器、旁路電容器、直流直流(DC — DC )轉換器、及 /或交流直流(AC — DC )轉換器)亦可以利用習知技術及設Referring to FIG. 6, the formation of the power and location conduit U4a & n4b can also be more oriented to the interface of the semiconductor substrate 102 (but still located inside the substrate 102). In this embodiment, the power and ground perforations 108a and 10 讣 can also extend to the entire or almost the entire length of the semiconductor substrate 102. Since the power and location ducts 114a and 114b will be connected closer to the substrate 1 〇2 The interface surface of the circuit 112. These power and place conduits in FIG. 6 14a and 14b can be extended by power and place perforations 108a and 108b (not shown in FIG. 6) and connected to the circuit 12 which is also an interface made on the substrate 102 nearby. These power and location conduits 11 4a and 11 4b can be fabricated using conventional processing and fabrication techniques, using conductive materials (for example, gold, copper, aluminum, or highly doped polycrystalline silicon). Figures 4 and 7 Another method of supplying power and location to the circuit 112: In these embodiments, power and location are provided to the circuit 1 12 using the conventional winding connection technology, which uses the custom shown in Figure 4 Know the winding 丨 j 2 and the connection pads 1 2 2. Those skilled in this art should understand that the method of supplying power and location to the circuit 丨 2 via the circuit board 4 00 (or power supply, not shown) can also be used Utilize many other technologies. All technologies that provide power and location connections on the circuit, whether known or derived in the future, should fall within the scope of the present invention. ~ ^ As mentioned previously, the circuit 11 2 is a conventional method for adjusting power and transmitting this required power to the device 200. This circuit 11 2 (for example, a voltage regulator, a bypass capacitor, a direct current direct current (DC-DC) converter, and / Or exchange straight (AC - DC) converter) can also be provided using conventional techniques and

第25頁 1239438 五、發明說明(19) 計(舉例來說,完成必要χ# 電晶體(CMOU q 车凋正功能的習知互補式金氧半 二= 電路設計)加 準備、及關閉期間,將適當的電、以及在啟動 似於對電路112提供電路板40ϋ也2可以利用類 未調整功率及地點的技術,夢2f =,圖中未示)的 此而言,請參考第5圖,在一;固上九\繞線/裝置200。就Page 25 1239438 V. Description of the invention (19) Design (for example, complete the necessary χ # transistor (CMOU q car with the function of the conventional complementary metal oxide semi-two = circuit design) plus preparation, and shutdown period, The appropriate electric power and the technology that is similar to providing the circuit board 40ϋ to the circuit 112 can also be used to adjust the power and location of the technology. Dream 2f =, not shown in the figure) In this regard, please refer to Figure 5, In one; solid on nine \ winding / device 200. on

^ f ilea ^ ^ ^ "J 及輸出地點穿孔11 8b,藉以供、應含周效=1 ίς牙孔11 8a、 2〇〇。隨後μ言號路徑便可以提;:正:率及/或地點至裝置 及U6b間的電路連接至穿置二功率及地點導管— 受展置200的功率及輸入。 iieaiueb^續i考第5圖’輸出功率及輸出地點導管 以接繞線至基底1〇2的介面上方、匹配或 =於!%=的二率及地點輸入的特定悍塾。在這個實施 導管il6u116b會在沒有立略,因為輸出功率及地點 200的適當功率及地點/即連接的情況下,被繞線至裝置 這個輸出功率乃/輪入。舉例來說,功率調整模組100的 至裝置2〇〇。’ S 土點亦可以利用第6圖所示的方法繞線 乃θ = ί第^圖,輪出功率及地點導管116a、116b及116c f :的Λ I t衣作技術形成於基底1 〇 2内部、並且至對應於 :置的=或,輸出的一個預定焊塾i〇6X、i〇6y、及 、個Λ細例中’輸出功率及地點穿孔並不是必需^ f ilea ^ ^ ^ " J and perforation 11 8b at the output site, for the purpose of supply, should include perpetual effect = 1 ί dental holes 11 8a, 2000. Then the μ signal path can be mentioned ;: Positive: The circuit between the rate and / or place to the device and U6b is connected to the two power and place conduits-subject to the power and input of the exhibition 200. iieaiueb ^ continued i test Figure 5 ’output power and output location conduit to connect the wire above the interface of the base 102, matching or specific input of the second rate and location at!% =. In this implementation, the duct il6u116b will be wound to the device without proper strategy because of the output power and the proper power and location of the location 200 / ie the connection. This output power is / round in. For example, the power adjustment module 100 to the device 200. 'S soil points can also be wound using the method shown in Figure 6; θ = ί Figure ^, the power and location of the conduits 116a, 116b, and 116c f: Λ I t clothing technology is formed on the substrate 1 〇2 Internal and corresponding to: set = or, a predetermined welding output i〇6X, i〇6y, and, in the Λ detailed example, 'output power and location perforation are not necessary

1239438 五、發明說明(20) 的,因為輸出功率及地點導管丨丨以及丨丨⑼乃是直接繞線至基 底102的介面上方、匹配或對應於裝置2〇〇的功率及地點輸入 的指定焊墊106x M06y、及1062。這些功率及地點導管丨丨以 及11 6b可以經由導電材料(舉例來說,金、銅、铭、或高推 質複晶矽)加以製作。 另外功率凋玉模組1 〇 〇的輸出功率及地點亦可以利用 第7圖所示的方法繞線至裝置2〇〇。在這個實施例中,輸出功 =及地點乃是利用習知繞線連結技術提供給裝置2 0 0。簡而 言之,習知繞線120 (及連接焊墊,圖中未示)乃是用來將 功率調整模組100的輸出互連至裝置2〇〇的適當輸入。 應该注意的是,功率調整模組丨〇 〇可以利用一個兩階段 處理加以製作,其中,穿孔1〇4及1〇8 (及其他元件,舉例來 說,功率及地點導管114及116)係首先形成,然後,利用習 知互補式金氧半電晶體(CM〇s )或雙極性電晶體)處 理的電路112再接著形成。事實上,應該瞭解的是,製作功 整模組100的任何製作技術(及其中利用的材料),無 娜疋已知的或是未來發展出來的,均應該屬於本發明的 内。 再者,應該注意的,參考說明書内的所有實施例,熟習 ^技藝者亦應該能夠明白及瞭解:仍有其他許多技術能夠將 笔路112的調整或輸出功率及地點提供至裝置2〇〇。事實上, 應該瞭解的是,設計及製作焊塾、穿孔、導管、電路、及繞 線連結的任何技術,無論是現在已知的或是未來發展的,均 D亥該屬於本發明的範圍内;另外,應該瞭解的是,這些基1239438 V. Description of the invention (20), because the output power and location conduits 丨 丨 and 丨 丨 ⑼ are directly welded above the interface of the base 102, matching or corresponding to the power and location input of the device 200. Pads 106x M06y, and 1062. These power and location conduits and 11 6b can be fabricated from conductive materials (for example, gold, copper, inscriptions, or high-strength polycrystalline silicon). In addition, the output power and location of the power withered module 1000 can also be wound to the device 200 using the method shown in Figure 7. In this embodiment, the output power and location are provided to the device 2 0 using a conventional winding connection technology. In short, the conventional winding 120 (and connection pads, not shown) is used to interconnect the output of the power adjustment module 100 to the appropriate input of the device 200. It should be noted that the power adjustment module 丨 〇〇 can be produced using a two-stage process, where the perforations 104 and 108 (and other components, for example, the power and place conduits 114 and 116) are The circuit 112 is formed first, and then the circuit 112 is processed by a conventional complementary metal-oxide semiconductor transistor (CM0s) or bipolar transistor. In fact, it should be understood that any manufacturing technology (and the materials used in it) for manufacturing the function module 100, which is not known by Nayeon or developed in the future, should belong to the present invention. Furthermore, it should be noted that with reference to all the embodiments in the description, skilled artisans should also be able to understand and understand that there are still many other technologies that can provide the adjustment or output power and location of the pen circuit 112 to the device 2000. In fact, it should be understood that any technology for designing and manufacturing solder joints, perforations, conduits, circuits, and wire connections, whether now known or developed in the future, should fall within the scope of the present invention. ; In addition, it should be understood that these bases

1239438 五、發明說明(21) " " " -------- =、焊,:牙孔、導管、電路、及繞線連結中利用的任何材 广一無娜疋現在已知的或是未來發展的,亦應該屬於本發明 的範圍内。 士本發明係特別有適合用於空間限制的環境中。就此而 :,將功率調整元件設置成與積體電路裝置基本上相同的基 足=以讓積㈣路裝置四周的間隙能夠提供其他用途: 二::Ξ降:Ϊ靜態或動態記憶體可以設置為更接近微處理 ⑼1=;;::與記憶體通信的移動時間。這亦可以獲致 400 pf個/力調整模組1 00亦可以設置於裝置200及電路板 二圖所,。在這個實施例中,第2圖所示的功率 外,这此〜丨廿架構乃是較為適當的,因為除了別的以 t , 牙亦可以促進裝置200所利用(但不為功率4周敕 ^二所(I用AM):號的電性連接’舉例來說,動態隨機; 置的㈣…立址^靜態隨機存取記憶體(SRAM)記憶體震 理模門功率模組100亦可以設置於裝置2°°及熱能管 主動電性/(兴例^7圖所示。有鑑於功率調整模組100的 切电r玍增C舉例來說,電路J丨2 )乃是盥帝 ::在=電性層及電路板4〇〇間形成分離; 分離’ ^如先前所述,這可以制繞線連結12g (如第4更= 点不、,、或其他現在已知的或未來發展的互連技術力 θ ,亚且,這些均應該屬於本發明的範圍内。u σ ^凡 在特定情況下’熱能管理元件⑽最好能夠設置為遠離1239438 V. Description of the invention (21) " " " -------- =, soldering: any material used in the perforations, conduits, circuits, and winding connection Known or future development should also fall within the scope of the present invention. The present invention is particularly suitable for use in space-constrained environments. To this end: set the power adjustment element to the same basic foot as the integrated circuit device = so that the gap around the integrated circuit device can provide other uses: 2: :: drop: Ϊ static or dynamic memory can be set To get closer to microprocessing, ⑼1 = ;; :: mobile time to communicate with memory. This can also result in 400 pf units / force adjustment module 1 00 can also be installed in the device 200 and the circuit board. In this embodiment, in addition to the power shown in FIG. 2, this structure is more appropriate, because, among other things, the teeth can also promote the use of the device 200 (but not the power for 4 weeks) ^ Two Institutes (I use AM): the electrical connection of the number 'for example, dynamic random; the location of ㈣ ... standing ^ static random access memory (SRAM) memory seismic module door power module 100 can also Set at 2 °° of the device and the active electrical energy of the heat pipe / (shown in Figure ^ 7. In view of the cut-off power r of the power adjustment module 100, for example, the circuit J 丨 2) is the emperor: : Separation is formed between the electrical layer and the circuit board 400; Separation '^ As mentioned earlier, this can be made by wire-wound connection 12g (as the fourth more = point no ,, or other now known or future Developed interconnect technology forces θ, and, these should all fall within the scope of the present invention. U σ ^ Where the 'thermal energy management element' is best to be set away from

第28頁 1239438 —------ 五、發明說明(22) _一 系統ίο的其他元件。就此而言,熱能 個能夠讓氣體在系統1。的元件上方行進的可以是- ;組1。。及裝置200所生的熱能。這種架=促=去除 空間限制環境中的利用, =y =促進系統10在 的功率調整功能。在這個;;足夠 存裝置)的其他系統需求下彳主π,说要+屺丨思肢或貧料儲 in Μ. ^ ^ ^ ^ Cm 月况放置在裝置200附近、一 有足夠體積(用以放置風扇)㈣域中。 組300另可外能會在較4例中,實施-個更緊密的熱能管理模 舉例來說如接第下: 熱捕捉元件捕捉及移:;=,及利/用广有微恤^ 會更為有利。隨後^=°°及,或電路112所生的熱能亦 其相對於裝置2GG可以θ F、,^可以利用—個熱能拒絕元件, 上,應該瞭解的是,的或遠離的’加以拒絕。事實 術,無論是現在已知的裝置或f系統的任何技 範圍内。 一 毛展的,均應该屬於本發明的 最後,在特定愔、 要的。舉例來說,力0 ,冷卻、日能管理模組300亦可以是不必 的Crusoe處理p,便^Γ、 曰日 ,諸如.Transmeta公司 可以由於其微二足跳呈現低熱能曲線。如是,系統1〇便 可攜式或手持式裝置)^靶於空間限制的環境(舉例來說, 熱能力及空間考量。 並且不在乎熱能管理模組3 0 0的 因應本發明的另一 荷欲,本發明乃是一個整合的功率 第29頁 1239438 ^-___ 五、發明說日------ $ $此官理模組,其可以將這個功率調整元件(亦即:功率 或f ^及這個熱能管理元件(亦即:熱能捕捉、移除、及/ 蜿)的功能加入至單一個結構中。相對地,在先前討論 組貝苑例中,這些功率調整及熱能捕捉、移除、及拒絕的模 二糸利用各種架構進行推疊的分離結構,與裝置2〇〇分離, 形成一個三層結構。因應本發明的這個特徵,這個功率 I,元件f這個熱能管理元件乃是加入在單一個結構中。如 j、除先前所述的好處外,吾等亦可以得到額外好處,舉例 喟i r f幅降低整體佔用體積,且這個消耗裝置、這個功率 二=杈、,且及廷個熱能管理模組、間的直接物理接觸亦可以 ::以促進功率調整結構及/或消耗裝置的熱能捕捉及拒絕 另外,本發明的這個特徵亦 及=忐官理模組的獨一無二包裝架構—消耗裝置 :: 的是’由於這個消耗裝置及這個功率調整模二 楗供這個整合功率調整及熱能管理模組的熱能管理:用 此頜外的熱能捕捉及拒絕元件亦將可以省略。 ^ a 的特徵,因為在部分例子中,這個功率調整桓=:: 可以會達成裝置20 0的操作溫度。 、、的知作& 另外,使這個熱能管理模組”微型化,,亦可 率調整及熱能管理模組在高空間限制環境中的每,進,a 100的熱能管理元件的熱能捕捉及熱能拒絕〜:。當模 以使這些熱能捕捉功能能夠與這些功率調整功離’ ^ 個結構中時,這個單一姓嫌r 月b正ΰ在單 I '结構(亦即:第8圖所示的功率調;Page 28 1239438 ------- 5. Description of the invention (22) _ 一 Other components of the system. In this regard, thermal energy allows gas to be in the system1. Traveling over the components can be-; group 1. . And the thermal energy generated by the device 200. This framework = promotes = removes the use in space-constrained environments, = y = facilitates the power adjustment function of the system 10 in. In this ;; enough storage device) other system requirements, the main π, said to + 屺 丨 think limb or lean material storage in Μ. ^ ^ ^ ^ Cm monthly conditions are placed near the device 200, a sufficient volume (using To place the fan) in the field. The group 300 can also implement a more compact thermal management module in 4 cases compared to the 4 cases. For example, as follows: Heat capture element capture and movement: =, and good use / use of micro-shirts ^ 会More favorable. Then ^ = °°, or the thermal energy generated by the circuit 112 can also be used θ F ,, ^ can be used a thermal energy rejection element with respect to the device 2GG, it should be understood that, or away from the 'to reject. Facts are within the scope of any of the currently known devices or f systems. A Mao exhibition should belong to the end of the present invention. For example, force 0, cooling, and solar energy management module 300 may also be unnecessary Crusoe processing p, so ^ Γ, date, such as. Transmeta company can show a low thermal energy curve due to its micro two-foot jump. If so, the system 10 can be a portable or handheld device) ^ Targeted in a space-constrained environment (for example, thermal capacity and space considerations. And does not care about the thermal energy management module 3 0 0 according to another desire of the present invention The present invention is an integrated power. Page 29 1239438 ^ -___ V. Invention Day ------ $ $ This official management module can integrate this power adjustment element (ie: power or f ^ And the function of this thermal energy management element (ie: thermal energy capture, removal, and / or meandering) is added to a single structure. In contrast, in the previous discussion of the Shibeiyuan example, these power adjustments and thermal energy capture, removal, And the rejected Mo Erji used various structures to push and stack the separation structure and separated from the device 2000 to form a three-layer structure. In accordance with this feature of the invention, the power I, element f, and the thermal energy management element are added in In a single structure, such as j, in addition to the benefits previously described, we can also obtain additional benefits, such as 喟 irf amplitude to reduce the overall occupied volume, and this consumption device, this power two = fork, and the heat The direct physical contact between the management module and the module can also be used to promote thermal capture and rejection of the power adjustment structure and / or the consuming device. In addition, this feature of the present invention is also the unique packaging structure of the 忐 official management module—the consuming device :: Yes because of the consumption device and the power adjustment module for the thermal management of the integrated power adjustment and thermal management module: the heat capture and rejection components outside the jaw can also be omitted. ^ A features, Because in some examples, this power adjustment 桓 = :: can reach the operating temperature of the device 20 0. In addition, the miniaturization of this thermal energy management module can also achieve rate adjustment and thermal energy management In the high-space-restricted environment, the module's thermal energy capture and thermal energy rejection of the thermal management element of a 100 ~: When the mold is used to enable these thermal energy capture functions to be separated from these power adjustment functions, This single surname is considered to be in the single I 'structure (ie, the power tone shown in Figure 8;

第30頁 1239438Page 30 1239438

五、發明說明(24) 及熱能管理模組1 0 0 0 )將可以 裝内部(請參照,舉例來說, 可以利用置於這個裝置/包裝 處的一個熱槽加以完成。 2施在一個積體電路裝置的包 第11圖)°這些熱能拒絕功能 表面、或是置於裝置/包裝遠 請參考第8及9圖,功率調整及熱能管理模組1〇〇〇可以具 有功率調整元件1 1 0 0。這個功率調整元件丨i 〇 〇可以大體上類 似於第2至7圖所示的功率調整模組1 0 〇、並且可以具有,舉、 例來說,先前所述的穿孔、焊墊、及電路。為方便說明,功 率調整元件11 〇 〇的細節及功能將不再這裡重覆。 這個功率調整及熱能管理模組】0 0 0亦可以包括熱能管理元件 1200。熱能管理元件12〇〇乃是用來捕捉及移除裝置2〇〇及/ 或功率調整模組1 1 〇 〇所生的熱能,藉以使裝置2 〇 〇及/或功 率調整模組11 00的溫度不會超過一個給定溫度。這個熱能管 理元件1 2 00亦可以用來拒絕這個熱能。如此,在操作中,熱 月匕&理元件1 2 0 0便可以捕捉裝置2 〇 〇及功率調整模組丨丨〇 〇所 生的熱能、並且移除這個熱能,藉以使其能夠透過對流或一 個熱能拒絕元件(舉例來說,一個習知熱槽)散播至鄰近環 境。 功率調整及熱能管理模組1 0 0 0亦可以具有基底1〇2&,其 中形成功率調整模組1 〇 0 0的一個主要部分,以及基底丨〇 2 b, 其中形成熱能管理元件1 2 0 0的一個部分。這兩個基底可以利 用’舉例來說,玻璃及半導體結構的陽極(an〇dic )或熔解 (f usion )連結、共熔(eutect ic )連結、或黏著劑 (adhe s i ve )連結,加以連結。另外,利用金屬結構亦可以Fifth, the invention description (24) and the thermal energy management module 1 0 0 0) can be installed inside (please refer to, for example, it can be completed by using a heat sink placed at the device / packaging place. 2 Body circuit device package (Figure 11) ° These thermal energy rejection functional surfaces, or placed in the device / package, please refer to Figures 8 and 9, the power adjustment and thermal management module 1000 can have power adjustment elements 1 1 0 0. This power adjustment element 丨 i〇〇 can be substantially similar to the power adjustment module 100 shown in FIGS. 2 to 7 and can have, for example, the aforementioned perforations, pads, and circuits . For the convenience of explanation, the details and functions of the power adjusting element 11 00 will not be repeated here. This power adjustment and thermal energy management module] 0 0 0 may also include a thermal energy management element 1200. The thermal energy management element 1200 is used to capture and remove the thermal energy generated by the device 2000 and / or the power adjustment module 1 1 00, so that the device 2000 and / or the power adjustment module 1 100 The temperature will not exceed a given temperature. This thermal management element 1 200 can also be used to reject this thermal energy. In this way, in operation, the thermal moon & management element 12 00 can capture the thermal energy generated by the device 2000 and the power adjustment module 丨 丨 〇〇 and remove this thermal energy so that it can pass through convection Or a heat rejection element (for example, a conventional heat sink) is spread to the surrounding environment. The power adjustment and thermal energy management module 1 0 0 0 may also have a substrate 10 2 &, which forms a main part of the power adjustment module 1 0 0, and a substrate 1 2 b, in which a thermal energy management element 1 2 0 is formed A part of 0. The two substrates can be connected by, for example, an anodic or fusion connection, an eutectic connection, or an adhe si connection between glass and semiconductor structures. . In addition, metal structures can also be used

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,用熔接(welding)、焊接(s〇ldering)、共熔連結 (entectlc bondmg)、或黏著劑(adhesive)加以 合基底1〇23及祕便可以形成功率調整及熱能管;模 在沒種架構中,在印刷電路板4〇〇及裝置2〇〇輸入/ 的:號路徑間提供電性連接的彳面穿m利用兩個步驟加 以衣作。百先,一個分離組合的介面穿孔會形成在功率調 元件1100及熱能管理元件1200的各個基底中。隨後,當這兩 個基底連結時,基底丨02a中的一個介面穿孔會匹配於基底 10 2b中的對應介面穿孔,藉以形成模組1〇〇〇的介面穿孔。一 士為加強基底1〇2a及102b中、這些介面穿孔間的電性連 續,中間介面焊墊可以置於基底1〇2a及1〇21}中、各個匹配介 面的表面。各個匹配介面上的焊墊,在這兩個基底連結後, =會接觸另一匹配介面的對應焊墊。這種架構可以在匹配及 介面功率調整元件11〇〇及熱能管理元件1200時提供更大的容 忍度’且如此,可以加強功率調整及熱能管理模組丨〇 〇 〇,在 連結基底未能完美對齊時,的曝露介面間的電性連續。 另外,在利用功率及地點穿孔將外部功率提供給功率調 整模組11 0的那些例子中,吾等可以利用先前所述的製作技 術’藉以形成這些功率及地點穿孔。然而,在利用繞線連結 蔣外部功率提供給功率調整模組丨丨〇 〇的那些例子中,功率及 地點穿孔則不見得必要。 請繼續參考第8及9圖,在一個實施例中,熱能管理模組 1 2 0 0可以具有一個微通道熱能交換器丨2丨〇,其具有複數個微, Welding (welding), welding (soldering), eutectic bond (entectlc bondmg), or adhesive (adhesive) to combine the substrate 1023 and the secretion can form a power adjustment and thermal energy tube; mold in no structure In the printed circuit board 400 and the device 2000 input /: the path provided to provide electrical connection between the two sides of the path is used in two steps to fabricate. Baixian, a separated and combined interface perforation will be formed in each substrate of the power modulation element 1100 and the thermal energy management element 1200. Subsequently, when the two substrates are connected, an interface perforation in the substrate 02a will match the corresponding interface perforation in the substrate 102b, thereby forming an interface perforation of the module 1000. One is to strengthen the electrical continuity between these interface holes in the substrates 102a and 102b. The intermediate interface pads can be placed on the surfaces of the mating interfaces in the substrates 102a and 1021}. After the two pads are connected, the pads on each matching interface will contact the corresponding pads on the other matching interface. This architecture can provide greater tolerance when matching and interfacing with the power adjustment element 1100 and the thermal energy management element 1200 '. And so, the power adjustment and thermal energy management module can be strengthened, which is not perfect on the connection substrate. When aligned, the electrical interface between the exposure interfaces is continuous. In addition, in those examples where power and location perforations are used to provide external power to the power adjustment module 110, we can use the previously described production techniques' to form these power and location perforations. However, in those examples where windings are used to connect the external power supplied to the power adjustment module 丨 丨 〇 00, power and location perforations are not necessary. Please continue to refer to FIGS. 8 and 9. In one embodiment, the thermal energy management module 1 2 0 0 may have a micro-channel thermal energy exchanger 2, which has a plurality of micro-channels.

第32頁 1239438 五、發明說明(26) 通道1 220。這個微通道熱能交換器121〇亦可以包括唧筒 1 230、流體入口 1 240、流體出口125〇、及管道126〇,摔 供流體至微通道1 220。 徒Page 32 1239438 V. Description of the invention (26) Channel 1 220. The micro-channel heat exchanger 121o may also include a drum 1 230, a fluid inlet 1 240, a fluid outlet 125o, and a pipe 126o, for supplying fluid to the microchannel 1 220. only

請參考第10A及10B圖,微通道熱能交換器121〇可以是, 牛例來w兒,一個祕製作的半導體基底、機械製作的金屬基 底、或機械製作的玻璃基底。第10A及1〇B圖乃是分別用^介 紹一個範例微通道結構1 220的俯視及剖面圖。熱管理元件 1200的基底可以具有钱刻於介面中的一個微通道km—1及 1 22 0 — 2的圖案。這些微通道1 220 —丨及122〇 — 2亦可以因應 功率調整元件1 1 〇 〇特定區域的熱能移除需求,排列在熱能u管 理元件1 2 0 0的介面上方。微通道結構丨22〇的密度可以在^二 於預測或量測的超額熱能來源區域增加,或者,微通道丨22= —1及1 220 — 2的繞線亦可以設計,藉以將微通道熱能交換哭 1210、由入口至出口的溫度梯度降低及/或最小化。這些ς 通道1 2 2 0 — 1及1 2 2 0 — 2的寬度、深度、及形狀亦可以設計及 製作,藉以改善裝置的溫度一致性或滿足裝置2〇〇及或功 率調整元件11 〇〇上方的熱點。事實上,微通道結構122〇/的"形 成及排列亦可以經由美國專利申請案(Kenny等人於2〇〇2年^ 月1 9日提申的”電滲性微通道冷卻系統”申請案)所述的熱能 模型工具進行輔助設計或決定。另外,微通道熱能交換=% 1210及微通道1220 —1及1220 —2的許多不同類型排列、'佈 局、及架構則會在Kenny等人於2 002年1月19曰提申的美國專 利申請案中進行說明及介紹。 XPlease refer to Figs. 10A and 10B. The micro-channel thermal energy exchanger 121 may be Niu Ruilai, a semiconductor substrate made by metal, a metal substrate made by machine, or a glass substrate made by machine. Figures 10A and 10B are top and cross-sectional views of an example microchannel structure 1 220, respectively. The base of the thermal management element 1200 may have a pattern of micro-channels km-1 and 1 22 0-2 engraved in the interface. These micro-channels 1 220 — and 122 — 2 can also be arranged above the interface of the thermal energy management element 12 0 0 in response to the thermal energy removal needs of the power adjustment element 1 1 100. The density of the microchannel structure 22o can be increased in the area where the source of excess thermal energy is higher than predicted or measured. Alternatively, the windings of the microchannel 22 = —1 and 1 220 — 2 can also be designed to convert the microchannel thermal energy. Exchange cry 1210, decrease and / or minimize temperature gradient from inlet to outlet. The width, depth, and shape of these channels 1 2 2 0 — 1 and 1 2 2 0 — 2 can also be designed and manufactured to improve the temperature consistency of the device or meet the device 200 and or the power adjustment element 11 〇〇 Hot spots above. In fact, the formation and arrangement of the microchannel structure 1220 / can also be applied through the US patent application ("Electroosmotic Microchannel Cooling System" filed by Kenny et al. Case) to aid design or decision. In addition, microchannel thermal energy exchange =% 1210 and microchannels 1220 — 1 and 1220 — 2 many different types of arrangements, 'layouts, and architectures will be filed in U.S. patent applications filed on January 19, 2000 by Kenny et al. Description and introduction in the case. X

Kenny等人於2002年1月19曰提申的美國專利申請案(發Kenny et al. U.S. patent application filed on January 19, 2002 (issued

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明名稱為”電滲性微通道冷卻系統"申請 " ^ 號。這個Kenny等人提申的美國專利巾^^、)尚未取得申請序 中,將稱VKenny專利申請案” ’在本說明書 案,總體觀之,亦會提供本說明書參考。a個Kenny專利申請 應該注意的是,微通道丨2 2 〇亦可以 11 00的介面内部。另外,微通道結構丨2 ^伸至功率調整元件 熱管理模組1 20 0的第一及第一匹配介面亦可以=時,成在 中,微通道熱能交換器1 21 〇可以更有六+ 方在這個貝知例 2 0 0及功率調整元件丨丨00所生的熱能,装立捕捉及移除裝置 熱能交換器1210與裝置200及功率調整因乃是這個 物理接觸。 牛11 〇 〇間的更親密 =個微通迢熱能交換器1210亦可以,利用微通道1 220 一 1及1 220 - 2,具有至少一個流體路徑,如第1〇A圖所示。這 些獨立路徑可以因應這個應用裝置的需求及/或設計,連接 至不同唧筒1 2 3 0及/或不同熱能拒絕元件丨4丨〇。如先前所 述’微通道熱能交換器1210及微通道122〇_1及122〇一2的許 多不同類型的排列、佈局、及架構均已在£611117專利申請案 中加以說明及介紹,其可以進一步參考。 這個唧筒1 2 3 0可以是任何類型的唧筒裝置,其可以提供 捕捉裝置2 0 0及/或功率調整元件丨丨〇 〇產生熱能所需要的流 動及壓力。就此而言,唧筒可以是一個電滲性類型的唧筒裝 置’誠如Kenny專利申請案所說明及介紹。這種電滲性類型 的唧筒裝置並不在此詳細說明,其對應討論將可以參考 Kenny專利申請案。The name is "Electroosmotic Microchannel Cooling System" "Application" ^. This U.S. patent filed by Kenny et al. Has not yet been filed, and will be referred to as the "VKenny patent application" "in this specification The case, as a whole, will also provide a reference to this manual. A Kenny patent application It should be noted that the microchannel 2 2 0 can also be inside the 1 1 00 interface. In addition, the microchannel structure 丨 2 ^ extended to the first and first matching interface of the power adjustment element thermal management module 1 2 0 0 can also be in time, in the middle, the micro channel thermal energy exchanger 1 21 〇 can be more six + The thermal energy generated by Fang in this example 2 0 0 and the power adjustment element 丨 00 is installed in the capture and removal device thermal energy exchanger 1210 and the device 200 and the power adjustment factor is the physical contact. More intimate between cattle 1 100 = a micro-pass 迢 thermal energy exchanger 1210 is also available, using micro channels 1 220-1 and 1 220-2, with at least one fluid path, as shown in Figure 10A. These independent paths can be connected to different drums 1230 and / or different thermal energy rejection elements 4 and 0 according to the requirements and / or design of the application device. As mentioned previously, many different types of arrangements, layouts, and architectures of the microchannel heat exchanger 1210 and microchannels 122〇_1 and 1222012 have been described and introduced in the £ 611117 patent application. Further reference. This drum 1 2 3 0 can be any type of drum device, which can provide the flow and pressure required to capture the heat of the device 2 0 and / or the power adjustment element. In this regard, the cartridge can be an electroosmotic type cartridge device 'as described and described in the Kenny patent application. This electroosmotic type cartridge device is not described in detail here, and its corresponding discussion will refer to the Kenny patent application.

第34頁 1239438Page 34 1239438

五、發明說明(28) 第8及9圖的這個功率調整及熱能管理模組1〇〇〇可以促 =率調整元件11 00在裝置2〇〇附近的有效包裝,並提供熱能 管理元件1 20 0捕捉及移除功率調整元件11〇〇及/或裝置2〇 = 所生熱能的額外好處。另外,藉著將這些功率調整1埶能总 理元件放置於裝置20 0下方的單一個模組内,裝置2〇(^的一二 表面(舉例來說,上表面)便可以提供做為其他模式的存取 (諸如:光學或射頻電信)及/或記憶體裝置的放置。這個 放置步驟亦可以讓裝置20 0的表面能夠用於其他功能,包 括,、舉例來說,額外的熱能管理元件(如第3圖所=的熱槽 )或第二熱能管理元件(如第17A及17B圖所示)。 ·曰 、另外,第8及9圖的功率調整及熱能管理模組亦可以促進 做為一個分離裝置的有效包裝。就此而言,請參考第11及 12A圖,模組1 0 0 0可以加入至一個具有接腳13〇〇的典型電子 包裝1 30 0中,其可以調整適應熱能管理元件12〇〇 體0 第11圖實施例所示的這個裝置20 0可以利用一種習知的 面向下方、球狀連結的固定架構至一個電性互連陣列。另 外,這個裝置20 0亦可以利用類似於先前所述的方法(請參 考第2至7圖所示的實施例),固^於功率調整及熱能管理模 11 0 0 0。在裝置2 〇 0中利用一個面向下方、球狀連結的固定 架構可以提供幾個額外的好處,包括:提供裝置2及熱管 理,件1 20 0 (及填滿流體的微通道122〇)熱能捕捉能力間的 親密接觸,·以及提供裝置2〇〇的背面存取,藉以用於其他功 能,如先前所述。V. Description of the invention (28) The power adjustment and thermal energy management module 1000 in Figs. 8 and 9 can promote effective packaging of the rate adjustment element 1 100 in the vicinity of the device 2000, and provide the thermal energy management element 1 20 0 capture and removal of power adjustment element 1100 and / or device 20 = additional benefit of thermal energy generated. In addition, by placing these power adjustment units, the prime components can be placed in a single module below the device 200, and the one or two surfaces of the device 20 (^, for example, the upper surface) can be provided as other modes. Access (such as optical or RF telecommunications) and / or memory device placement. This placement step also allows the surface of the device 200 to be used for other functions, including, for example, additional thermal management elements ( The heat tank as shown in Figure 3) or the second thermal energy management element (as shown in Figures 17A and 17B). · In addition, the power adjustment and thermal management modules of Figures 8 and 9 can also be promoted as Effective packaging of a separation device. In this regard, please refer to Figures 11 and 12A. Module 1 0 0 0 can be added to a typical electronic package 1 3 0 0 with pin 1 3 0, which can be adjusted to accommodate thermal energy management. Element 12 00 body 0 The device 200 shown in the embodiment of FIG. 11 can use a conventional downward-facing, spherically connected fixing structure to an electrical interconnection array. In addition, the device 200 can also use Similar to previous The method described above (please refer to the embodiments shown in Figures 2 to 7) is fixed to the power adjustment and thermal management module 1 100 0. In the device 2000, a fixed structure facing downward and spherically connected can be used. Provides several additional benefits, including: providing intimate contact between device 2 and thermal management, thermal capture capabilities of the 1200 (and fluid-filled microchannel 122), and providing back access to the device 200 For other functions, as described earlier.

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五、發明說明(29) 弟1 2 A圖實施例所+、 向上方、繞線連接的固::置200亦可以利用-種習知的面 置200及包裝1 30 0間的連疋木構’其中’繞線連結可以提供裝 孔可以是不必要的的Λ 在這個實施例中,這些互連穿 連結至裝置2GG。“ 的繞線連結技術可以提供電性 處,包括,舉例來:兒;?玄貫施例亦會提供幾個重大好 ^來呪,將功率調整及熱能捕捉元件加入至包 2外、f以讓功率調整元件1100與裝置2 0 0保持接近。 ?οπ貫施例亦可以得到另一個好處,即··提供裝置 —\率凋整兀件1 1 0 0及熱能管理元件1 2 0 0間的親密接 、,藉以使裝置2 0 0及/或功率調整元件1 1 0 0產生的熱能可 、有效^也捕捉(利用微通道1 2 2 〇中的流體)、並由包裝1 3 〇 〇 移除[第12Α圖實施例的另一個好處是,裝置2〇〇的操作表面 f可以進行光學存取,其可以適用於其他的裝置,舉例來 說,光電裝置(諸如:調變器)、顯示裝置、光學成像裝置 (諸如:CCD )、及/或光學開關。 在想在粗糙環境中實施裝置2 0 0的情況下,密封包裝 1300可能是較為有利的選擇。如第12B圖所示,包裝13〇〇上 可以連接一個遮蓋1 320,藉以提供一個密封環境,其中,模 組1 0 00的整合功率調整及熱能管理能力係與裝置2〇〇親密接 觸。這個遮蓋1 320可以不透明(如光電裝置常見),或者, 這個遮蓋1 3 2 0亦可能在紅外線或可見光譜中透明(如顯示裝 置或成像裝置常見)。將功率調整及熱能管理功能整合在這 個包裝中可以讓熱感應裝置發揮最佳操作,如成像陣列。 在裝置2 0 0直接固定在基底(舉例來說,印刷電路板4 〇 〇V. Description of the invention (29) Brother 1 2 A in the example of Figure A +, upward, winding connection: :: 200 can also be used-a kind of conventional surface 200 and packaging linden wood between 1 300 It may be unnecessary to construct a 'where' wire-wound connection. In this embodiment, these interconnects are connected to the device 2GG. "The winding connection technology can provide electrical properties, including, for example: children;? Xuan Guan embodiment will also provide several major advantages 呪, add power adjustment and thermal energy capture components to the outside of the package 2, f to Keep the power adjustment element 1100 close to the device 2000.? Οπ Another embodiment can also get another benefit, that is, providing the device— \ rate adjustment element 1 1 0 0 and thermal management element 1 2 0 0 The intimate connection, so that the thermal energy generated by the device 2000 and / or the power adjustment element 1 1 0 0 can be efficiently and effectively captured (using the fluid in the micro channel 12 2 2 0), and the packaging 1 3 3 0 0 Another advantage of removing the embodiment of FIG. 12A is that the operating surface f of the device 200 can be optically accessed, which can be applied to other devices, such as photoelectric devices (such as modulators), A display device, an optical imaging device (such as a CCD), and / or an optical switch. When the device 2000 is intended to be implemented in a rough environment, a sealed package 1300 may be a more advantageous option. As shown in FIG. 12B, A cover 1 320 can be attached to the package 1300, whereby For a sealed environment, the integrated power adjustment and thermal management capabilities of the module 1000 are in close contact with the device 2000. This cover 1 320 may be opaque (as is common with optoelectronic devices), or this cover 1 3 2 0 It may also be transparent in the infrared or visible spectrum (as is common with display devices or imaging devices). Integrating power adjustment and thermal management functions in this package allows the optimal operation of thermal sensing devices, such as imaging arrays. In the device 2 0 0 Fixed directly to the substrate (for example, printed circuit board 4)

第36頁 1239438 五、發明說明(30) )上方的情況下,利用 網1動作流體供應至熱能 擇。請參考第13圖,這 成的通道或管道1260、 方提供給微通道熱能交 接(solder )、及 / 或 或内嵌管道1 260直接固 口 (圖中未示)及流體 以促進模組1 0 0 0在晶片 實施。 應該注意的是,將 行技術有很多種,舉例 口 ’藉以讓管道片段及 並連接至定位。這些連 以利用焊接(s〇lder ) 亦可以在模組1 0 00的頂 孔連接管道,藉以將一 兩個表面。事實上,將 能交換器1210流體入口 的或是未來發展的,均 第13圖的内欲通道 整及熱能管理模組1 〇 〇 〇 情況中。如第1 3圖所示 置的基底中、内嵌或形 通道或 來說, /或其 結可以 或黏著 面或底 個配件 内嵌通 及輸出 應該屬 架構亦 被包裝 ,這個 成的通 口疋模組1000的基底中的製作通道, 管理元件1 2 0 0可能是較為有利的選 個動作流體乃是利用基底中内嵌或形 由功率§周整及熱能管理模組1 〇 〇 〇的下 換器 1210。壓合(press fit)、焊 ,著劑(adhesive)可以將這些通道 定至微通道熱能交換器丨2丨〇的流體入 出口 (圖中未示)。苐13圖的架構可 移載(pick—place)構件處理中的 S道1 2 6 0連結至模組1 〇 〇 〇的可 吾等可以在模組1 〇 〇 〇中形成開 他聯結器能夠插入模組1 000、 是壓合(press fit)、或可 劑(adhesive)。或者,吾等 面形成開口 ,並且利用一個開 連結至這些開口上方的一個或 道或管道1260固定至微通道熱 的所有技術,無論是現在已知 於本發明的範圍内。 可以適用於消耗裝置與功率調 、且這個包裝被固定在基底的 動作流體可以利用固定消耗裝 道或管道,提供給功率調整及Page 36 1239438 V. Description of the invention (30)), the net 1 is used to supply fluid to the heat option. Please refer to FIG. 13, the formed channel or pipe 1260 is provided to the microchannel thermal energy transfer (solder), and / or the embedded pipe 1 260 is directly fixed (not shown) and fluid to promote the module 1 0 0 0 is implemented on the wafer. It should be noted that there are many different techniques, such as ‘to allow pipeline segments and and connect to positioning. These can also be welded (solder) and can also be connected to the pipe in the top hole of the module 1000, so as to connect one or two surfaces. In fact, the fluid inlet of the exchanger 1210 or the future development will be in the internal channel of Figure 13 and the thermal energy management module 1 00. As shown in Figure 13 in the base, embedded or shaped channel or, or its knot can be either an adhesive surface or a bottom fitting embedded through and the output should belong to the structure and also be packaged, this formed port的 The production channel in the base of the module 1000. The management element 1 2 0 0 may be more advantageous. The selection of an action fluid is based on the power embedded in the base or shaped by the power regulation and thermal management module 1 0 00. Down changer 1210. Press fit, welding, and adhesive can fix these channels to the fluid inlet and outlet of the micro-channel thermal energy exchanger 2 (not shown).苐 13 The structure of pick-place in the pick-place component S lane 1 2 60 can be connected to the module 1 000. We can form an open coupling in the module 1 000. The module 1000 is inserted, press fit, or adhesive. Alternatively, we can form openings and use one or more channels or pipes 1260 open above these openings to fix to microchannel heat using all techniques, whether now known within the scope of the present invention. It can be applied to the consumption device and power adjustment, and the packaging fluid is fixed to the substrate. The working fluid can be provided to the power adjustment and

第37頁 1239438 五、發明說明(31) 熱能管理模組的微通道熱能交 些通道(或内嵌管道)直接固 流體入口及出口、或是這個包 通道(或内散管道)連接至這 子中,在這個包裝中形成或内 中這些通道(或管道)及微通 間的互連。 另外,這個功率調整及熱 供模組1 0 〇 〇插作茶數資訊的電 更及時的冷卻及功率調整。請 率居整及熱能管理模組1 Q 〇 〇可 來說’溫度、壓力、及流動感 應器1270乃是用來提供表示裝 資訊(舉例來說,操作溫度) 便會繞線至控制器128〇,藉以 1 0 0 0功能的封閉迴路控制。 特別是,當感應器1 270具 制為1 2 8 0係可以利用這個溫度 正熱能管理元件12〇〇、功率調 的操作。在這些情況下,功率 操作於熱能控制模式,其中, 或更多個溫度感應器所量測到 制器1 280的回授信號。這個控 提供的資訊,藉以決定,舉^ 換器。這些配件可以用來將這 定在這個微通道熱能交換器的 裝的流體入口及出口。在這些 個包裝的流體入口及出口的例 嵌的管道及通道可以提供基底 道熱能交換器流體入口及出口 能管理模組1 0 0 0亦可以具有提 路或裝置,用以達成更有效及 參考第1 4及1 5圖,本發明的功 以額外具有感應器1 2 7 0 (舉例 應器)及控制器1 280。這些感 置20 0及模組1 0 0 0操作條件的 。感應器1 2 7 0的信號,隨後, 提供功率調整及熱能管理模組 有一個溫度量測感應器時,控 感應器提供的資料來變動或調 整元件1100、及/或裝置2〇〇 調整及熱能管理模組1 〇 〇 〇乃是 散佈在整個模組1 0 0 0中、一個 的溫度變動便可以提供做為控 制器1 2 8 0可以利用感應器1 2 7 〇 來說,模組1 〇 〇 〇及/或裝置Page 37 1239438 V. Description of the invention (31) The micro channel of the thermal energy management module The thermal energy transfer channels (or embedded pipelines) are directly connected to the solid fluid inlet and outlet, or the package channel (or internal diffused pipeline) is connected to this In this package, the interconnections between these channels (or pipes) and microfluidics are formed or internalized. In addition, the power adjustment and heat supply module 100 is inserted into the tea number information for more timely cooling and power adjustment. Please rate and adjust the thermal energy management module 1 Q 〇 can be said that 'temperature, pressure, and flow sensor 1270 is used to provide display information (for example, operating temperature) will be wound to the controller 128 〇, closed loop control with 1 000 functions. In particular, when the sensor 1 270 is configured as a 1 2 0 0 series, this temperature can be utilized for the operation of the positive thermal energy management element 12 00 and the power adjustment. In these cases, the power is operated in a thermal energy control mode, in which the feedback signal from the controller 1 280 is measured by one or more temperature sensors. The information provided by this control is used to make decisions, such as ^ converters. These accessories can be used to locate the fluid inlet and outlet of the microchannel heat exchanger. The embedded pipes and channels in the fluid inlets and outlets of these packages can provide the basal channel thermal energy exchanger fluid inlet and outlet energy management module 1 0 0 0 can also have lifts or devices to achieve more effective and reference Figures 14 and 15 show that the function of the present invention additionally includes a sensor 1270 (such as a reactor) and a controller 1280. These sense the operating conditions of the module 20 and module 1 0 0. The signal of the sensor 1270 is then provided. When the power adjustment and thermal energy management module has a temperature measurement sensor, the data provided by the sensor is controlled to change or adjust the component 1100 and / or the device 200 to adjust and Thermal management module 1 〇〇〇 is scattered throughout the module 1 0 0, one temperature change can be provided as a controller 1 2 0 0 can use the sensor 1 2 7 〇, module 1 〇〇〇 and / or device

1239438 五、發明說明(32) 2 0 0的平均溫度及相對於模組1〇〇〇及/或裝置2〇〇的溫度空間 。,應這些資訊,控制器1 28 0便可以調整通過微通道熱 旎父換裔1 2 1 0的微通道丨2 2 〇的流體流率。另外,這個控制器 1 2亦可以控制唧筒丨23〇的操作、或調整經過微通道熱能交 換器的不同通道形式的流體分佈,藉以調整微通道122〇中的 流體流率。 >另外’控制器1 2 8 0,在決定一個溫度靈敏狀態後,亦可 以警,裝置2 0 0可能會超過(或已經超過)其額定操作溫 度。。藉此,裝置20 0便可以啟動一個低功率模式,藉以降低 /、操作/JDL度及功率消耗。再者、,消耗較少的功率亦會使裝置 20 0及功率調整元件丨丨〇〇產生的熱能降低。這個裝置2〇〇,因 應與其操作溫度有關的資訊,便可以進入一個關閉程序,藉 乂做為保濃性的措施。因應溫度變動的其他動作係說明於 Kenny專利申請案中,其亦可以提供進一步的參考。 哭感應器1 270 (舉例來說,溫度、壓力、及/或流動感應 : 在基底102&及l〇2b内部的放置或位置可以基於數個考量 因素。舉例來說,將溫度感應器,相對於這些微通道122〇及 電路112及/或裝置2 0 0的預測或量測熱源,橫向放置可能是 相當有利的選擇。另外,將溫度感應器放置在基底l〇2a及 102b的不同深度(垂直位置)亦可能是相當有利的選擇。第 1一〇 a 1 0 b、1 4及1 5圖係表示在功率調整元件丨丨〇 〇及熱能管理 元, 1200中、置於各種位置的感應器127〇。這些感應器aw 乃是用來提供表示裝置2〇〇及模組1〇〇〇在特定區域的操作條 件(舉例來說,溫度)至控制器128〇。1239438 V. Description of the invention (32) The average temperature of 2000 and the temperature space relative to the module 1000 and / or the device 2000. Based on this information, the controller 1280 can adjust the fluid flow rate of the microchannel 丨 2 2 0 through the microchannel heat exchanger 1 2 1 0. In addition, this controller 12 can also control the operation of the cylinder 23o, or adjust the fluid distribution in different channel forms through the microchannel thermal energy converter, thereby adjusting the fluid flow rate in the microchannel 122o. > In addition, the 'controller 1 2 0 0', after deciding a temperature sensitive state, can also warn that the device 2 0 0 may exceed (or have exceeded) its rated operating temperature. . In this way, the device 200 can activate a low power mode, thereby reducing /, operating / JDL degree and power consumption. Furthermore, consuming less power will also reduce the thermal energy generated by the device 200 and the power adjustment element 丨 丨 oo. This device, 200, can enter a shutdown procedure based on information related to its operating temperature and use 乂 as a measure of consistency retention. Other actions in response to temperature fluctuations are described in the Kenny patent application, which can also provide further reference. Crying sensor 1 270 (for example, temperature, pressure, and / or flow sensing: placement or location within substrates 102 & 102b can be based on several considerations. For example, comparing temperature sensors to For the prediction or measurement of heat sources of these microchannels 122o and circuit 112 and / or device 2000, lateral placement may be a very advantageous choice. In addition, temperature sensors are placed at different depths of the substrates 102a and 102b ( (Vertical position) may also be a very advantageous choice. Figures 110a, 10b, 14, and 15 show the induction in the power adjustment element and thermal management element, 1200, in various positions 127。 These sensors aw are used to provide the operating conditions of the device 2000 and the module 1000 in a specific area (for example, temperature) to the controller 128.

第39頁 1239438 1 ' 五、發明說明(33) 感應器1 270的詳細討論、操作、及其放置或位置的各種 考量係說明於Kenny專利申請案中,其亦可以提供進一步的 參考。 咏應該注意的是,雖然第9及15圖的實施例僅介紹一個唧 :(亦即.唧洵1 230 ) ’但是功率調整及熱能管理模組1〇〇〇 ^可以具有多於一個的唧筒機構。額外的唧筒機構亦可以實 ^勤^在模組⑽0的特定區域中提供更即時且直接的流體 。這在裝置200及,或功率調整元件有預期 =情況中格外重要。舉例來說,多於—個㈣筒可以實 熱能J換器121°具有分離且獨立的微通道122。路 Si::二^圖所示。另外,利用多於,筒機 以提供ϋ::;明於Κ,專利申請案中,其亦可 ΗοΠί;來說’第15圖的功率調整及熱能管理模組 來提供裝置2(30的功率調整功、以及將裝置200Page 39 1239438 1 'V. Description of the invention (33) The detailed discussion, operation, and various considerations of the sensor 1 270 are described in the Kenny patent application, which can also provide further reference. It should be noted that although the embodiments of Figures 9 and 15 only introduce one 唧: (that is, 唧 洵 1 230) ', but the power adjustment and thermal energy management module 10000 ^ can have more than one 唧 tube mechanism. The additional pumping mechanism can also provide a more immediate and direct fluid in a specific area of the module ⑽0. This is particularly important in situations where the device 200 and or the power adjustment element are expected. For example, more than one canister can have a thermal energy converter 121 ° with separate and independent microchannels 122. Road Si :: II ^ shown in the figure. In addition, using more than a tube machine to provide ϋ ::; Ming Yu K, in the patent application, it can also ΗοΠί; let's say the power adjustment and thermal energy management module of Figure 15 to provide the power of device 2 (30 Adjust work and set 200

At 1 =率调整70件1100維持於可接受溫度範圍内的冷卻功 貞:。二整:熱能管理模組_操作⑽ :执ί:1變動可能會導因於裝置2〇〇所利用皂率變動。i 用流體唧筒的抻制疒味± p月匕力(舉例來說,利 的-产雜f 制仏號來增加流體流率),藉以將裝置2〇〇 的狐度維持在可接受的溫度範圍内。 ^置/〇〇 a威二1卜,這個功率調整及熱能管理模組1 0 0 0亦可以罝有雷 抓感—',藉以谓測裝置20 0的電流消耗。請參考第16、圖有電 第40頁 1239438 五、發明說明(34) 電流感應器1 290可以内嵌於半導體基底1〇2内部,藉以提供 表不裝置2 0 0及/或電路11 2電流消耗的資訊至控制哭丨2 8 〇。 隨後,,個控制器mo便可以利用這個偵測的電流^耗來調 整熱能官理兀件1 2 0 0的操作。舉例來說,因應電流感應器 1 2 9 0偵測的電流需求變動,控制器丨28〇便可以增加或減少 同1 2 3 0的流體流動,藉以調整熱能管理元件丨2 〇 〇的流體冷卻 能力。在這個實施例中,藉著偵測及分析裝置2〇〇的電流 求變動,控制器1 280便可以預期裝置2〇〇及/或 件1100的溫度變動。 /及力羊e周整兀 請繼續參考第1 6圖,電流感應器丨29〇亦可以偵測經過功 率调整το件11〇〇 (舉例來說,電壓調整裝置)的電路1 ^流。這個經過電路112的電流可以表示裝置2〇〇的電流及、 或功率消耗及需求。這個控制器亦可以利用感應哭1 採取的適當動作,藉以增加或降低因“ 另:! f調整:件1100的電流消耗變動所生的溫度變動。 延固控制态亦可以利用這個資訊以決定法 變動所生的熱能捕捉及拒絕需求。 為電机湞耗 —基於經過這些電壓調整裝置的電流量測,吾 疋,壓調整器的功率消耗及裝置20 0的功率消耗,、:“ 制益1 280能夠決定整體功率消耗並據以調整 曰·1彳控 器1210的熱能捕捉及移除能力。 ^广交換 能捕捉及移除能力亦可以藉著改變微;道;;二,10的熱 流:(舉例來,’調整哪筒123。的輸出流率)而體 正 控制益1 280亦可以,在捕捉及移除裝置2〇〇及模At 1 = rate adjustment 70 pieces of 1100 cooling power maintained within acceptable temperature range :. Second whole: Thermal Management Module_Operation ⑽: Execution: 1 The change may be caused by the change in the soap rate used by the device 2000. i Use the flavor of the fluid cartridge ± p dagger force (for example, the Li-producing f system to increase the fluid flow rate), so as to maintain the fox of the device 200 at an acceptable temperature Within range. ^ Set / 〇〇 a Wei 2 1 Bu, this power adjustment and thermal management module 1 0 0 0 can also have a thunder and grasp sense-', which is used to measure the current consumption of the device 2 0 0. Please refer to page 16, pictured on page 40, 1239438 V. Description of the invention (34) The current sensor 1 290 can be embedded in the semiconductor substrate 102, so as to provide the surface device 2 0 0 and / or the circuit 11 2 current Consumed information to control crying 2 8 0. Subsequently, the controller mo can use the detected current consumption to adjust the operation of the thermal energy management element 1220. For example, in response to a change in the current demand detected by the current sensor 1290, the controller 280 can increase or decrease the fluid flow with 1230, so as to adjust the fluid cooling of the thermal energy management element 2200. ability. In this embodiment, by detecting and analyzing the current change of the device 200, the controller 1 280 can anticipate the temperature change of the device 200 and / or the device 1100. / And Li Yang e week, please continue to refer to Figure 16, the current sensor 29 can also detect the current through the power adjustment τ ο 1 〇 (for example, the voltage adjustment device) circuit. This current through the circuit 112 may represent the current and / or power consumption and demand of the device 200. This controller can also use the appropriate action taken by Induction Cry 1 to increase or decrease the temperature change caused by the "other :! f adjustment: the current consumption change of piece 1100. The extended control state can also use this information to determine the method The heat generated by the change captures and rejects the demand. For the motor consumption—based on the current measurement through these voltage adjustment devices, we, the power consumption of the voltage regulator and the power consumption of the device 20 ,: "制 益 1 280 can determine the overall power consumption and adjust the thermal energy capture and removal capabilities of the control unit 1210 accordingly. ^ Canton exchange can capture and remove the ability can also be changed by micro; Tao ;; Second, the heat flow of 10: (for example, 'adjust which tube 123. the output flow rate) and the body positive control benefits 1 280 can also, The capture and removal device 200 and the mold

第41頁 1239438 五、發明說明(35) _ 組1 000的熱能後,調整熱能拒絕能力 器1 2 1 0埶能插招芬教Μ ▲ f 又做通運熱能交換 專利申請案中,其亦可以提供進—步的參考平〜明於Kenny 在第1 6圖的實施例中,感應器〗29〇乃是 =的電壓調整器整合在一起。應該注意的是,= :可以由裝置2。0在操作期間的功率消 工:: =:/或消耗。隨後,這個控制器i 2:=以置: 通道動作,舉例來說,調整這個微 能拒絕能力,如先前所述。. 此刀“個糸統的熱 另外,應該注意的是,控制器1 280執行 可以實施在裝置20。内㉝。在這種情況 ==亦 用,舉例來說,感應器127〇 (舉例來 、置00乃疋利 )及/或電流感應器1 290的資訊、$ θ # π + 力机動 電路)電性活動的資訊,藉以決及類比電流輸出 2 0 0便可以調整功率調整元年11〇疋的、功率消耗。藉此,裝置 這個裝置2。。亦可以調整的:率傳送能力。另外, 除、及/或拒絕能力。利用Λ 牛1 200的熱能捕捉、移 的部分或全部功能/操作可 丁控制扣1 280執仃 說,時脈速率)的利用、以 ^置可供應資訊(舉例來 用。 及衣置20〇中既存運算資源的利 另外,對於執行重覆或可 可以預測裝置的功率消耗變動、*功能的裝置而言,吾等亦 並利用整個系統的動態模型 第42頁 1239438Page 41 1239438 V. Description of the invention (35) _ After the group of 1,000 thermal energy, adjust the thermal energy rejection device 1 2 1 0 埶 can be inserted to recruit Fen M ▲ f In the patent application for transportation heat energy exchange, it can also The reference level for further steps is shown in Kenny. In the embodiment of Figure 16, the inductor 29 is a voltage regulator integrated. It should be noted that =: can be consumed by the device 2.0 during power consumption: =: / or consumed. Subsequently, the controller i 2: = is set to: channel action, for example, adjusting the micropower rejection capability, as previously described. In addition, it should be noted that the execution of the controller 1 280 can be implemented in the device 20. In this case == also used, for example, the sensor 127〇 (for example , Set 00 is a profit) and / or current sensor 1 290 information, $ θ # π + force motor circuit) electrical activity information, so as to determine and analog current output 2 0 0 can adjust the power adjustment year 11 〇 疋, power consumption. With this, the device 2 can also be adjusted: rate transmission ability. In addition, the ability to divide, and / or reject. Partial or all functions of capturing and moving using the thermal energy of Λ cattle 1 200 / Operation can control the use of the control button 1 280, said the use of clock rate, to provide the available information (for example to use. And the advantage of the existing computing resources in the clothes 20, also for the implementation of repeated or cocoa For devices that predict the power consumption of the device and the function of the device, we also use the dynamic model of the entire system. Page 42 1239438

五、發明說明(36) 產生熱能捕捉及拒絕管理的是彳土 2 0 0内部的溫度時態或空間變動/加強策略,藉以將裝置 控制器1 280亦可以實施複雜的控取:化二這個裝置2〇〇及/或 及/或控制器1 280可以決定熱法,精以讓裝置2〇〇 響應,使裝置2〇〇及/或功率、1二//凡件1 2 0 0的適當動作或 捉、拒絕的操作程序,藉 ::以用末發展-個熱能捕 動及熱能範圍内的操作 運异硬雜性、及,或較佳流 另外,裝置200及/或控制器128〇亦可以利用 200操作的資訊來預測裝置2〇〇内部的功率消^ 、門、八裝置 舉例來說,倘若裝置2 〇 〇是一個料卢裡的 t 工3刀佈 哭的功鱼、、占釭甘τ处么個被處理益,則這個浮點處理 ^ ,八可此_佔據這個微處理器的小部分表面, ::暫時超過這個微處理器其他部分的功率消耗。在J類例 ::個微處理器的子系統溫度將會快速上升至超過建議 $作溫度的水準。如此,裝置200及/或控制器128〇最好能 夠預測裝置20 0的密集功率消耗、並藉以提供必要的埶能捕 捉能力,其對於裝置200的密集功率消耗區域係呈現動態。 因應本發明的另一個特徵,本發明乃是一個封閉迴路的 功率調整及熱能管理系統。請參考第丨7A圖,在一個實施例 中,封閉迴路的功率調整及熱能管理系統2〇〇〇係具有功率調 ^及熱能管理模組1 〇〇〇,如先前所述,並搭配熱能捕捉及拒 系巴模組1 4 0 0。在這個實施例中,功率調整及熱能管理模組V. Description of the invention (36) What generates thermal energy to capture and refuses to manage is the temperature temporal or spatial change / enhancement strategy of the soil 2 0, so that the device controller 1 280 can also implement complex control: The device 200 and / or and / or the controller 1 280 may determine the thermal method, so that the device 2000 responds, and the device 200 and / or the power, 12 // every piece 1 2 0 0 is appropriate. The operation procedure of action or catching and rejection is to: use the end-use to develop a thermal energy capture and operation within the range of thermal energy, and, or better flow. In addition, the device 200 and / or the controller 128. It is also possible to use the information of 200 operations to predict the power consumption of the device 2000, the door, and the eight devices. For example, if the device 200 is a workman who is crying with a knife and a knife. If there is any processing benefit at τ, then this floating-point processing ^, which may occupy a small part of the surface of the microprocessor, :: temporarily exceed the power consumption of the other parts of the microprocessor. In class J :: The temperature of the microprocessor subsystem will quickly rise to a level above the recommended operating temperature. As such, the device 200 and / or the controller 128 may preferably predict the dense power consumption of the device 200 and thereby provide the necessary energy capture capability, which is dynamic for the dense power consumption area of the device 200. According to another feature of the present invention, the present invention is a closed loop power adjustment and thermal energy management system. Please refer to FIG. 7A. In one embodiment, the closed-loop power adjustment and thermal energy management system 2000 has a power regulation and thermal energy management module 1000, as previously described, and is equipped with thermal energy capture. And rejected the bus module 1 4 0 0. In this embodiment, the power adjustment and thermal energy management module

第43頁 1239438 五、發明說明(37) 1000乃是置於印刷電路板400表面、裝置200乃是置於功率調 整及熱能管理模組1 〇 〇 〇表面、且熱能捕捉及拒絕模組丨4 〇 〇乃 是置於裝置200表面。在這種架構中,功率調整及熱能管理 模組的功率調整元件1 1〇〇乃是置於裝置2〇〇附近,藉以提供 先前所述的功率調整好處。另外,微通道熱能交換器丨2丨〇乃 是置於功率調整元件11 〇 〇的附近,藉以促進加強的熱能捕 捉、移除、及拒絕,藉以將功率調整元件1丨〇 〇的溫度維持在 一個可接受的範圍内。隨後,熱能管理元件丨2 〇 〇捕捉的熱能 便會提供(經由流體流動)給熱能捕捉及拒絕模組丨4〇〇的熱 能拒絕元件1410。 ^ 這個熱能捕捉及拒絕模組1 400乃是利用熱能拒絕元件141〇 (如具有直尾翅的熱槽所示)及熱能捕捉元件142〇拒絕熱能 管理元件1 2 〇 0所生的熱能。這個熱能拒絕元件1 4 1 〇可以利用 許多不同類型的熱能拒絕技術,包括··在高表面積結構(諸 如·直尾翅中的流體通道)上具有流體流動路徑的設計,如 Kenny專利申請案所說明及介紹。Kenny專利申請案所說明及 介紹的全部熱能捕捉、移除及拒絕技術亦可以提供進一步的 參考。 熱能捕捉元件1 4 2 0具有一個微通道熱能交換器1 4 3 〇,其 可以促進裝置2 0 0所生熱能的區域化熱能捕捉、移除、及拒 絶(搭配熱能拒絕元件1 4 1 0 )。這個微通道熱能交換器1 4 3 〇 具有複數個微通道1 440 (其操作中具有流體),藉以完成裝 置的有效熱能捕捉。這個微通道熱能交換器丨43〇,包括微通 道1 440,可以利用與微通道熱能交換器121〇及微通道122〇相Page 43 1239438 V. Description of the invention (37) 1000 is placed on the surface of the printed circuit board 400, device 200 is placed on the surface of the power adjustment and thermal management module 1 000, and the thermal energy capture and rejection module 丨 4 〇〇 is placed on the surface of the device 200. In this architecture, the power adjustment element 1 100 of the power adjustment and thermal management module is placed near the device 200 to provide the power adjustment benefits previously described. In addition, the micro-channel heat exchanger 丨 2 丨 〇 is placed near the power adjustment element 11 〇 to promote enhanced thermal energy capture, removal, and rejection, so as to maintain the temperature of the power adjustment element 1 丨 〇 Within an acceptable range. Subsequently, the thermal energy captured by the thermal energy management element 丨 200 will provide (via the fluid flow) to the thermal energy rejection element 1410 of the thermal energy capture and rejection module 丨 400. ^ This thermal energy capture and rejection module 1 400 uses thermal energy rejection element 1410 (as shown by a heat sink with a straight tail fin) and thermal energy capture element 1420 to reject the thermal energy generated by the thermal management element 12 00. This thermal energy rejection element 1 4 1 0 can utilize many different types of thermal energy rejection techniques, including designing with fluid flow paths on high surface area structures such as fluid channels in straight tail fins, as described in the Kenny patent application. Description and introduction. All of the thermal capture, removal, and rejection techniques described and introduced in the Kenny patent application can also provide further reference. The thermal energy capture element 1420 has a microchannel thermal energy exchanger 143, which can promote the regionalized thermal energy capture, removal, and rejection of the thermal energy generated by the device 200 (with the thermal energy rejection element 1 4 1 0). . This micro-channel thermal energy exchanger 1 430 has a plurality of micro-channels 1 440 (with fluid in operation) to complete the effective thermal energy capture of the device. This micro-channel thermal energy exchanger 43 0, including micro-channel 1 440, can be used with the micro-channel thermal energy converter 121 0 and micro-channel 122

第44頁 1239438 五、發明說明(38) 同的方法及材料加以製作。Page 44 1239438 V. Description of the invention (38) It is produced by the same method and materials.

# 一,2 Μ = ί ^通逼熱能交換器1 430亦可以因應裝置20Q 捉移除需求,藉以,舉例來言兒,安排在熱能捕 捉兀件1 4 2 0的介面。料捅、蓄彳^ / Λ ^ — 1囬 U通運1 440的密度可以在對應預期或量 二:i二區域内增加。另外,微通道1 440的繞線亦可以 =δ又什’藉以將微通道熱能交換器1 420人d及出σ的溫度 :又降低f/或最小化。微通道1 4 4 0的寬度、深度、及形狀 ’、可以進二設計及製作,藉以改善裝置2〇〇中的裝置溫度一 ,性。事貫上,微通道144〇的形狀及佈局亦可以透過Lnny …利申晴案所述的熱能模型工具進行輔助設計。另外,微通 迢熱^交換器1 420及微通道144〇的許多不同類型排列、佈 局、架構及設計技術亦說明及介紹於Kenny專利申請案中, 其亦可以提供進一步的參考。 類似於先前對於熱能管理模組i 2 〇 〇所述,微通道熱能交換器 1420的微通道亦可以同時置於熱能捕捉元件142〇的兩個介面 ^ ’藉以加以熱能產生裝置的熱能捕捉、移除、及/或拒 系巴。另外’應該注意的是,微通道熱能交換器丨43〇亦可以架 構為一個微通道柱子的陣列。就此而言,一個垂直通道陣列 係橫向互連於熱能捕捉元件142〇的一個介面(或兩個介面) 亡方。這種架構更可以加強裝置2〇〇及/或功率調整及熱能 官理模組1 0 0 0所生熱能的熱能捕捉、移除、及/或拒絕。 晴繼續參考第1 7 A圖,在這個實施例中,π即筒1 2 3 0係置 於熱能捕捉及拒絕模組1 40 0及熱能拒絕元件14 1〇間。這個,即 筒1 230可以是一個電滲性唧筒裝置,如Kenny專利申請案所# 一 , 2 Μ = ί ^ The forced heat exchanger 1 430 can also respond to the device 20Q capture removal request, so that, for example, it is arranged at the interface of the thermal capture element 142 0. Material 捅, storage 彳 ^ / Λ ^ — The density of 1 round of U Express 1 440 can be increased in the corresponding expected or volume 2: i2 area. In addition, the winding of the micro-channel 1 440 can also be equal to δ and even ′, so as to reduce the temperature of the micro-channel thermal energy exchanger 1 420 d and σ: and reduce f / or minimize it. The width, depth, and shape of the microchannel 144 can be further designed and manufactured to improve the device temperature and performance in the device 2000. Consistently, the shape and layout of the microchannel 1440 can also be assisted by the thermal model tool described in the Lnny… Lishenqing case. In addition, many different types of arrangements, layouts, architectures, and design techniques of Microcom 迢 Heat Exchanger 1 420 and Micro Channel 144〇 are also explained and introduced in the Kenny patent application, which can also provide further reference. Similar to the previous description of the thermal energy management module i 2 00, the micro-channels of the micro-channel thermal energy exchanger 1420 can also be placed on the two interfaces of the thermal energy capture element 1420 at the same time. Exclude, and / or refuse. In addition, it should be noted that the microchannel thermal energy exchanger 43 can also be structured as an array of microchannel pillars. In this regard, a vertical channel array is laterally interconnected to one interface (or two interfaces) of the thermal energy capture element 1420. This architecture can further enhance the capture, removal, and / or rejection of thermal energy generated by the device 2000 and / or power adjustment and thermal energy management module 1000. Qing continued to refer to FIG. 17A. In this embodiment, π is a tube 1230 that is placed between the thermal energy capture and rejection module 1400 and the thermal energy rejection element 1410. This, that is, the cartridge 1 230 may be an electroosmotic cartridge device, as in the Kenny patent application.

第45頁 1239438 五、發明說明(39) 述。另外,唧同1 23 0的許多不同類型架構及設計亦可以接 受,其包括Kenny專利申請案所述的那些架構及設計,且亦 可以提供進一步的參考。 應该’主心的疋’系統2 〇 〇 〇亦可以利用複數個唧筒及/或 獨立的流體冷卻迴路,藉以對模組1〇〇〇内部、不同位置的熱 能捕捉能力提供獨立的控制。這個特徵亦在Kenny專利申請 案中詳細說明,且亦可以提供進一步的參考。 請參考第17B圖,在特定情況下,將熱能拒絕元件141〇 設置於遠離系統20 0 0的其他元件可以是相當有利的選擇。這 類采構可以促進系統2000在空間限制環境中的利用,並且能 夠在微小足跡中提供足夠的功率調整及熱能管理。當埶能拒 絕元件1410係遠離地設置時,管道126〇便可以提供裝置2〇〇 及功率調整元件1 21 0加熱流體的流體路徑至熱能拒絕元件 1410。在這個實施例中,這個遠離設置的熱能拒絕元件i4i〇 可以放置在具有足夠體積(用以放置直尾翅陣陣,其可以具 有一個風扇)的區域中,並且不會干擾到裝置2〇〇附近的周、 邊系統(諸如:記憶體或資料儲存裝置)的其他系统需求。 事實上,如先前所述,在特定情況下,熱能拒絕功能: 不是必要的。 第8至17B圖的功率調整及熱能管理模組1〇〇〇乃 紹置於熱能管理元件表面的功率調整元件。在 例中,熱能管理元件1100乃是置於功率調整元件ΐ2〇θ〇的二 實η施例二熱能管理元件_可以更有效地捕捉 及移除裝置200所生的熱能,因為微通道與褒置咖的鄰近。 1239438 五、發明說明(40) 另外,功率調整元件11〇〇的電路112的熱能捕捉及移除亦可 以維持相對不變。如此,熱能管理元件丨2〇〇便可以更有效地 捕捉裝置20 0及功率調整元件11〇〇所生熱能的捕捉及移除。 因此,在這個實施例中,吾等便可以因為熱能管理元件丨丨⑽ 所執行的熱能捕捉及移除功能,而不需要加入一個熱能 元件(舉例來說,一個熱槽,圖中未示)。 斤應该注意的是,如同第8圖所示的實施例,微通道丨2 2 〇 (第1 8圖所示)亦可以延伸至功率調整元件丨丨〇 〇的介面中。 另=,微通道結構1 22 0亦可以同時形成在熱能管理模組12〇〇 =第一及第二匹配介面上。在這種情況下,微通道熱能交換 器1210甚至可以更有效地捕捉及移除裝置2〇〇及功率調整元 件11 0 0的熱月b,其部分原因為這個微通道熱能交換器1 2 1 〇與 裝置20 0及功率調整元件1100的更親密物理接觸。 ” 除了熱能考量以外,功率調整元件的電路仍然會緊鄰這 個裝置’藉以提供先前所述的全部功率調整好處。 第1 8圖的這個功率調整及熱能管理模組丨〇 〇 〇亦可以利用 第8圖所示功率調整及熱能管理模組1〇〇〇的相同方法加以製 作及實施。另外,第18圖的功率調整及熱能管理模組1〇〇〇亦 可以具有第8至17B圖所示功率調整及熱能管理模組丨〇〇〇的全 部特定、附加物、屬性、及實施例。就此而言,第丨8圖的功 率調整及熱能管理模組1 〇〇〇可以具有,舉例來說,一個控制 器、量測或偵測裝置200及/或功率調整元件丨1〇〇操作條件 的參數感應器(舉例來說,溫度、壓力、及流動)、及監控 I置2 0 0及/或功率調整元件1 1 〇 〇消耗電流的電流感應器。Page 45 1239438 V. Description of Invention (39). In addition, many different types of architectures and designs are also acceptable, including those described in the Kenny patent application, and may provide further references. The ‘main 疋’ system 2000 can also utilize multiple cymbals and / or independent fluid cooling circuits to provide independent control of the thermal capture capabilities of the module 1000 at different locations. This feature is also detailed in the Kenny patent application and may provide further reference. Please refer to FIG. 17B. In certain cases, it may be a very advantageous option to place the thermal energy rejection element 141o away from the other elements of the system 2000. This kind of mining structure can promote the use of the system 2000 in a space-constrained environment, and can provide sufficient power adjustment and thermal energy management in a small footprint. When the heat-rejecting element 1410 is disposed away from the ground, the pipe 1260 can provide the device 2000 and the power adjusting element 1 2 10 to heat the fluid path of the fluid to the heat-rejecting element 1410. In this embodiment, the heat-rejecting element i4i〇, which is far away from the setting, can be placed in an area having a sufficient volume (for placing a straight-tailed array, which can have a fan), and will not interfere with the device 200. Other system requirements for nearby weeks and side systems (such as memory or data storage devices). In fact, as mentioned earlier, in certain cases, thermal energy rejection function: not necessary. The power adjustment and thermal energy management module 1000 in Figs. 8 to 17B shows the power adjustment element placed on the surface of the thermal energy management element. In the example, the thermal energy management element 1100 is a second embodiment placed in the power adjustment element ΐ20θθ. Embodiment 2 The thermal energy management element _ can more effectively capture and remove the thermal energy generated by the device 200 because the microchannel and Near the coffee shop. 1239438 V. Description of the invention (40) In addition, the thermal energy capture and removal of the circuit 112 of the power adjustment element 1100 can also be kept relatively unchanged. In this way, the thermal energy management element 200 can capture and remove the thermal energy generated by the device 200 and the power adjustment element 1100 more effectively. Therefore, in this embodiment, we can not add a thermal energy element because of the thermal energy capture and removal functions performed by the thermal energy management element 丨 丨 ⑽ (for example, a thermal tank, not shown in the figure) . It should be noted that, like the embodiment shown in FIG. 8, the micro channel 丨 2 2 0 (shown in FIG. 18) can also be extended to the interface of the power adjustment element 丨 丨 〇 〇. In addition, the micro-channel structure 1 22 0 can also be formed on the thermal management module 12 00 = the first and second matching interfaces at the same time. In this case, the microchannel thermal energy exchanger 1210 can even more effectively capture and remove the thermal month b of the device 2000 and the power adjustment element 1 100, partly because of this microchannel thermal energy exchanger 1 2 1 O Closer physical contact with the device 200 and the power adjustment element 1100. In addition to the thermal considerations, the circuit of the power adjustment element will still be in close proximity to this device to provide all the power adjustment benefits previously described. The power adjustment and thermal management module of Fig. 18 can also use the 8th The power adjustment and thermal energy management module 1000 shown in the figure is produced and implemented in the same way. In addition, the power adjustment and thermal energy management module 1000 in Fig. 18 can also have the power shown in Figs. 8 to 17B. All specifics, additions, attributes, and embodiments of the adjustment and thermal energy management module 丨 〇〇. In this regard, the power adjustment and thermal energy management module 1 of FIG. 8 may have, for example, A controller, measuring or detecting device 200 and / or power adjustment element, 100 parameter sensors for operating conditions (for example, temperature, pressure, and flow), and monitoring I set to 200 and / or The power adjustment element 1 1 100 is a current sensor that consumes current.

第47頁 1239438 五、發明說明(41)" " "' ------ 另外,第18圖的功率調整及熱能管理模組1〇〇〇亦可以呈 筒,藉以提供動作流體至這些微通道(包括,舉例來〔兒,具 有微小足跡的電滲性唧筒),藉以協助在空間限制環境力: 入這個杈組。另外,第18圖的這個功率調整及熱能管理模組 1000亦可以具有複數個獨立微通道,藉以允許裝置2〇〇及/ 或功率調整元件丨丨00指定區域的獨立熱能捕捉及移除。 另外,第1 8圖的功率調整及熱能管理模組丨〇 〇 〇亦可以實 施成第11、12A及12B圖的包裝架構,其大體上與第8圖實施K 例相同。事實上,第8至17Β圖所示功率調整及熱能管理模組 1 0 0 0的全部特色及屬性,如先前所述,均會同等地應用於第 1 8圖的功率調整及熱能管理模組中。為精簡目的,這些實施 例的特色及屬性將不再加以重覆。 灵& 請繼續參考第18圖,功率調整及熱能管理模組1〇〇〇亦可 以利用第2至1 7B圖所述的全部相同技術在裝置2 〇 〇上進行信 號繞線。另外,功率及地點亦可以利用相同技術,在電路 112及裝置2 0 0上繞線。舉例來說,第18圖的實施例可以利用 第6圖所述的繞線技術,其中,輸出功率及地點導管係利用 習知製作技術形成在基底中、並繞線至對應裝置2 〇 〇的功率 及地點輸入的預定焊墊。在這種情況下,輸出功率及地點導 管係直接繞線至裝置2 0 0的功率及地點輸入。 在另一個實施例中,這個功率調整元件及這個熱能管理 元件的微通道結構乃是形成在相同的基底中一而不是形成在 兩個基底10 2a及10 2 b中,如先前所述及第8及18圖所示。請 芩考第1 9 A圖,微通道結構1 2 2 0及功率調整元件11 〇 〇係製作Page 47 1239438 V. Explanation of the invention (41) " " " '------ In addition, the power adjustment and thermal energy management module 1000 of Fig. 18 can also be a tube to provide a working fluid. These microchannels (including, for example, electroosmotic cartridges with tiny footprints) are used to help limit environmental forces in space: into this branch group. In addition, the power adjustment and thermal energy management module 1000 of FIG. 18 may also have a plurality of independent micro-channels, thereby allowing the device 200 and / or the power adjustment element 丨 00 to specify the area for independent thermal energy capture and removal. In addition, the power adjustment and thermal management module of Fig. 18 can also be implemented as the packaging structure of Figs. 11, 12A, and 12B, which is basically the same as the example of implementation of Fig. 8 K. In fact, all the features and attributes of the power adjustment and thermal energy management module 1 0 0 0 shown in Figs. 8 to 17B will be equally applied to the power adjustment and thermal energy management module in Fig. 18 as described previously. in. For simplicity, the features and attributes of these embodiments will not be repeated. Spirit & Please continue to refer to Figure 18. The power adjustment and thermal management module 1000 can also use all the same techniques described in Figures 2 to 17B to perform signal winding on the device 2000. In addition, power and location can also use the same technology to wind wires on circuit 112 and device 2000. For example, the embodiment of FIG. 18 may use the winding technology described in FIG. 6, wherein the output power and the place conduit are formed in the substrate using conventional manufacturing techniques and are wound to the corresponding device 2000. Predetermined pad for power and location input. In this case, the output power and location conduit is directly wound to the power and location input of the device 2000. In another embodiment, the micro-channel structure of the power adjustment element and the thermal energy management element is formed in the same substrate instead of the two substrates 10 2a and 10 2 b, as described previously and the first Figures 8 and 18 show. Please consider Figure 19A, microchannel structure 1 2 2 0 and power adjustment element 11 〇 〇 production

第48頁 1239438 五、發明說明(42) 於相同基底中。在這個實施例 — 調整元件不需要在介面這個消耗 、施官理元件及功率 說,一個印刷電路板)旨,由兩個分離(舉例來 組合的成本可以降低。另外,因 土底、,且& ,因此這個 耗裝置表面的熱能產生電路道鄰近於置於這個消 相對於第9圖的實施例,亦可以力裝置的熱能捕捉及移除’ 的電路112的熱能捕捉及“:约功:調整元件 個實施例便可以不需要,舉例n夠,且猎此,這 移除、捕捉、及拒絕能力。"兄,熱槽或風扇的額外熱能 請繼續參考第19A圖,在這個 1 200的微通道結構1 220亦可以利用 1中熱此官理元件 /或Kenny專利申請案所述的A °的试通這製作技術及 提供進-步的參考。隨後,的功率 ^技/加^製作’其亦可以 可以利用習知的互補式金氧半 00的電路112便 些介面、功率、及地點穿孔亦可以、 中以 形成後加以製作。連接這個穿孔的焊塾工構 路11 2及微通道1 220的製作後加以製作。 另」則了以在电 應該注意的是,具有複數基底(亦即:1〇2&及1〇計)的 功率調整及熱能管理模組1 0 0 0的全部特色、屬性、扶代方 案、及實施例亦完全適用於第19Α圖的實施例中。就曰此而 言’第19Α圖的功率調整及熱能管理模組1〇〇〇可以具有,舉 例來說’參數感應器(舉例來說’溫度、壓力、流動)及電 流感應器。另外’第19Α圖的功率調整及熱能管理模組1〇〇() 第49頁 1239438 五、發明說明" · ' '~~"' 亦可以具有哪筒及複數個獨立的微通道,藉以達成裝置2〇〇 及/或功率調整元件1100指定區域的獨立熱能捕捉及移除。 另外,第18A圖的功率調整及熱能管理模組1〇〇〇亦可以 實施成第11、12A、12B圖的包裝架構。事實上,第8至18圖 所示功率調整及熱能管理模組1 0 0 0,如先前所述,的全部特 色及屬性’亦會同等適用於第1 9 A圖的功率調整及熱能管理 模組。 請繼續參考第19A圖,功率調整及熱能管理模組1〇〇〇可 以利用先前所述的任何繞線技術,在裝置2〇〇上進行信號繞 線。另外,功率及地點亦可以利用相同技術(包括第6圖所 不及先前所述的技術),在電路112及裝置200上進行繞線。 應該注意的是,在功率調整元件丨丨〇 〇電路丨丨2能夠不產 生損害地進行微通道處理的那些情況下,電路丨丨2亦可以在 微通這結構的製作前加以製作。如此,這些介面、功率、地 點穿孔便可以在微通道結構的形成前或形成後加以製作。連 接些穿孔的焊塾(若有)係可以在功率調整及熱能管理模 組1 0 0 0的其他元件完成後加以製作。 在第1 9 A圖的實施例中,功率調整元件丨丨〇 〇及熱能管理 =件1 2 0 〇的微通道結構乃是製作於一個基底中。在另一個實 $例中’整個微通道結構(或這個結構的部分)可以製作於 装置20 0的背側。請參考第19B及19C圖,微通道結構的微通 逼1 220可以完整地製作於裝置2〇〇中(第19B圖)、或部分地 ,作於裝置200及功率調整元件11〇〇中(第19C圖)。另外, 第19A圖的相關討論亦可以完整及等同地適用於第19B及19〇Page 48 1239438 V. Description of the invention (42) In the same substrate. In this embodiment — the adjustment element does not need to consume the power, components, and power of the interface, a printed circuit board, and the cost of combining two separate (for example, can be reduced. In addition, because of the earth bottom, and & Therefore, the thermal energy generating circuit of the device dissipating the surface is adjacent to this embodiment, which is placed relative to the embodiment of FIG. 9, and can also capture and remove the thermal energy of the device. The thermal energy capture of the circuit 112 and ": about work: adjustment Element embodiments may not be needed, for example n is enough, and hunting this, this removes, captures, and rejects the ability. "Brother, the additional heat of the heat sink or fan, please continue to refer to Figure 19A, in this 1 200 The micro-channel structure 1 220 can also utilize the production technology of A ° trial heat as described in the Kenny patent application and / or the Kenny patent application and provide further reference. Subsequently, the power ^ technology / plus ^ production 'It can also use the conventional complementary metal oxide circuit 00 circuit 112, the interface, power, and location of the perforations can also be made after the formation of. Welding workers to connect this perforation 11 2 Micro channel 1 220 is produced after the production. In addition, it should be noted that the power adjustment and thermal management module with a plurality of bases (that is, 10 & and 10) is included in the electricity. 1 0 0 0 All the features, attributes, supporting solutions, and embodiments are also fully applicable to the embodiment of FIG. 19A. In this regard, the 'power adjustment and thermal energy management module 1000 of FIG. 19A may have, for example, "Parameter sensors (for example," temperature, pressure, flow) and current sensors. In addition, the power adjustment and thermal energy management module of Figure 19A Figure 100 () Page 49 1239438 V. Description of the invention " · '~~ "' It is also possible to have a tube and a plurality of independent micro-channels to achieve independent thermal energy capture and removal of the designated area of the device 200 and / or the power adjustment element 1100. In addition, FIG. 18A The power adjustment and thermal energy management module 1000 can also be implemented into the packaging structure of Figures 11, 12A, and 12B. In fact, the power adjustment and thermal energy management modules 1 00 shown in Figures 8 to 18, as previously All the features and attributes mentioned above will also The power adjustment and thermal energy management module suitable for Fig. 19A is shown in Fig. 19A. Please continue to refer to Fig. 19A. The power adjustment and thermal energy management module 1000 can use any of the winding technologies described above in the installation 2 Signal winding is performed on 〇. In addition, power and location can also be wound on circuit 112 and device 200 using the same technology (including the technology described earlier in Figure 6). It should be noted that power adjustment Components 丨 丨 〇〇Circuits 2 In those cases where microchannel processing can be performed without causing damage, the circuits 丨 2 can also be fabricated before the fabrication of the Microcom structure. In this way, these interfaces, power, and locations are perforated. It can be fabricated before or after the microchannel structure is formed. Connecting the perforated welding rods (if any) can be made after the other components of the power adjustment and thermal management module 1 00 0 are completed. In the embodiment of FIG. 19A, the micro-channel structure of the power adjustment element 丨 丨 〇 and thermal management = 1200 is fabricated in a substrate. In another example, the entire microchannel structure (or part of this structure) can be fabricated on the back side of the device 200. Please refer to Figs. 19B and 19C. The micro channel structure 1 220 of the microchannel structure can be completely manufactured in the device 2000 (Figure 19B), or partly in the device 200 and the power adjustment element 1100 ( (Figure 19C). In addition, the discussions in Figure 19A can be applied to Figures 19B and 19 in their entirety and equivalently.

第50頁 1239438 五、發明說明(44) 圖所述的功率調整及熱能箐 將不再加以重覆。…里拉組。為簡便起見’這些討論 元件一 =徵乃是利用這個模組及/或先前所述 m 調整元件1100、熱能捕捉及拒絕模組 二二;::70件1410、及熱能捕捉元件142。)做為系統 = 有ϊ域性的功率調整功能及熱能捕:、移 除及/或拒、、,巴 '力。舉例來說’請參考第2〇圖,在一個實施 例中’裝置20 0係置於印刷電路板4〇〇上,且 1 420係置於裝置200表面,藉以侣推_ ¥9λ/、、、 福從兀仵 精以促進裝置20 0所生區域熱能的 捕捉。這個功率調整及熱能管理模組1〇〇〇係置於熱能捕捉元 人牛1 420表面。在這個實施例中,將功率調整元件ιι〇〇設置 於熱能捕捉元件1 420及熱能管理元件12〇〇乃是相當有利的選 擇,其可以加強功率調整元件1 i 00所生熱能的捕捉。再者, 熱能拒絕元件1410 (舉例來說,具有直尾翅的熱槽)亦可以 置於熱能管理元件1 2 0 0表面,藉以得到熱能管理元件12〇〇及 熱能捕捉元件1420 (主要疋由裝置2〇〇產生)捕捉熱能(主 要是由功率調整元件11 〇〇產生)的加強拒絕功能。^ 在第20圖所示的實施例中,功率調整元件 ^t42〇0 〇 先前所述的繞線連結架構加以完成(請參照,舉例來說,第 4及7圖)。 請繼續參考第20圖,這個唧筒(圖中未示)可以是一個 電滲性類型的17即筒’其設置於熱能管理模組丨2〇〇及/或熱能 捕捉元件1 420中。另外’這個唧筒並不見得要設置於熱能^Page 50 1239438 V. Description of Invention (44) The power adjustment and thermal energy described in the figure will not be repeated. … The lira group. For the sake of simplicity 'these discussions. Component 1 = sign is to use this module and / or m adjustment element 1100, thermal energy capture and rejection module 22 as described previously: 70 pieces of 1410, and thermal energy capture element 142. ) As a system = has a regional power adjustment function and thermal energy capture:, remove and / or reject, ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,). As a system = a regional power adjustment function and thermal energy capture :, removal and / or rejection, ,,,,,,,,,,,,,,,,, force For example, please refer to FIG. 20. In one embodiment, the device 200 is placed on the printed circuit board 400, and the device 420 is placed on the surface of the device 200, thereby pushing _ ¥ 9λ / ,, Fortunately, the vultures are used to promote the capture of thermal energy in the area generated by the device. This power adjustment and thermal energy management module 1000 is placed on the surface of thermal energy capture element 1 420. In this embodiment, it is a very advantageous option to set the power adjustment element ιιο to the thermal energy capture element 1 420 and the thermal energy management element 1 200, which can enhance the capture of the thermal energy generated by the power adjustment element 1 i 00. In addition, the thermal energy rejection element 1410 (for example, a heat tank with a straight tail fin) can also be placed on the surface of the thermal energy management element 1 2 0 to obtain the thermal energy management element 1200 and the thermal energy capture element 1420 (mainly by The device 200 generates enhanced rejection function that captures thermal energy (mainly generated by the power adjusting element 11000). ^ In the embodiment shown in FIG. 20, the power adjustment element ^ t4 2 0 0 〇 is completed by the winding connection structure described previously (see, for example, FIGS. 4 and 7). Please continue to refer to FIG. 20, this canister (not shown) can be an electroosmotic type 17 namely canister ', which is provided in the thermal energy management module 200 and / or the thermal energy capturing element 1 420. In addition, ‘this tube is not necessarily set to thermal energy ^

1239438 五、發明說明(45) '" 理模組1 20 0或熱能捕捉元件1 420中,而可以是一個獨立 (stand—alone)裝置。如先前所述,這個。即筒亦可以具有 複數個唧筒機構,其包括··具有以㈣乂專利申請案所述架構 的機構。 第2 1圖係表示利用模組及/或元件為設計元件的另一個 例子。請參考第2 1圖,在這個實施例中,功率調整及熱能管 理模組1 0 0 0係置於裝置2 〇 〇表面,且熱能捕捉元件丨4 2 〇係置 於功率調整及熱能管理模組丨0 0 0的功率調整元件11〇〇表面。 2者,熱能拒絕元件1410係置於熱能捕捉元件142〇的表面, ,以加強熱能管理元件12〇〇 (主要是由裝置2〇〇產生)及熱 月b捕捉元件1 4 2 0 (主要是由功率調整元件丨丨〇 〇產生)所捕捉 熱能的拒絕能力。 、另外,這些功率調整及熱能管理功能亦可以加入(全部 或部分)至其他的模組或元件中,甚至是加入消耗裝置本 身。就此而言,這些功能可以與消耗裝置組合,藉以促進更 緊密且成本效率的系統。請參考第22圖,在本發明的這個實 鈀例中’功率調整及熱能管理模組丨0 0 0係置於裝置2 〇 〇中, ,,能捕捉元件1 420亦可以置於裝置2〇〇表面,藉以加強熱 能管理元件1 20 0所捕捉熱能(由裝置2〇()及功率調整元件 11 〇 〇產生)的拒絕能力。另外,中於熱能拒絕元件丨4丨〇及裝 f 2 0 〇的鄰近關係,熱能拒絕元件丨4丨〇亦可以直接捕捉及拒 絶裝置2 0 0所生的熱能。然而,在熱能拒絕元件丨4丨〇提供額 外熱忐捕捉及拒絕能力並非必需的情況下,則熱能拒絕元件 1 41 〇亦可以省略。1239438 V. Description of the invention (45) '" The management module 1 2 0 0 or the thermal energy capture element 1 420 may be a stand-alone device. As mentioned earlier, this. The instant tube may also have a plurality of tube mechanisms, which include ... a mechanism having the structure described in the patent application. Figure 21 shows another example of the use of modules and / or components as design components. Please refer to FIG. 21. In this embodiment, the power adjustment and thermal energy management module 1000 is placed on the surface of the device 2000, and the thermal energy capturing element 4200 is placed on the power adjustment and thermal energy management module. The surface of the power adjustment element 1100 of the group 丨 0 0 0. For two, the thermal energy rejection element 1410 is placed on the surface of the thermal energy capture element 1420 to strengthen the thermal energy management element 1200 (mainly generated by the device 200) and the thermal moon b capture element 1 4 2 0 (mainly Rejection ability of thermal energy captured by power adjustment element (丨 丨 〇〇). In addition, these power adjustment and thermal energy management functions can also be added (in whole or in part) to other modules or components, or even to the consumption device itself. In this regard, these functions can be combined with a consumer device to promote a more compact and cost-efficient system. Please refer to FIG. 22. In the real palladium example of the present invention, the 'power adjustment and thermal energy management module' 0 0 0 is placed in the device 2 0. The capture element 1 420 can also be placed in the device 2 2. 〇 Surface, thereby strengthening the rejection ability of the thermal energy captured by the thermal energy management element 1 200 (generated by the device 20 () and the power adjustment element 1 100). In addition, the thermal energy rejection element 丨 4 丨 〇 can directly capture and reject the thermal energy generated by the device 2000, due to the proximity of the thermal energy rejection element 丨 4 丨 〇 and the f 2 00. However, in cases where the thermal rejection element 丨 4 丨 provides additional heat capture and rejection capabilities is not necessary, the thermal rejection element 141 〇 can also be omitted.

第52頁 1239438 五、發明說明(46) 應該注意的是,功率調整及熱能管理模組i 〇 〇 〇亦可以置 於裝置2 0 0或功率調整元件1 1 〇 〇的背側及/或熱能管理元件 1 2 0 〇亦可以同時置於裝置2 〇 〇的前側及背側。再者,功率調 整元件1 1 0 0亦可以置於裝置2 0 0的前側,且熱能管理元件 1 2 0 〇亦可以置於裝置2 〇 〇的背側。 ^請參考第23圖,在本發明的另一個實施例中,系統2 0 00 係具有置於裝置2 0 0中的功率調整模組丨〇 〇,且熱能捕捉及拒 絕模組1 400係可以置於裝置20 0表面,藉以提供裝置及功率 凋產元件11 0 0的熱旎管理。如第2 2圖所示的實施例,第2 3圖 的功率調整模組1 0 0可以置於裝置2 〇 〇的背側或置於裝置2 〇 〇 的前側。另外,功率調整模組丨〇〇亦可以同時置於裝置2〇()的 前側及背側。 應邊注意的是,在第2 0至2 3圖所示的全部實施例中,這 二元件及模組,以及具有功率調整及/或熱能管理功能/元 件的消耗裝置,亦可以具有第2至19圖所示對應元件及模組 的種種特色、屬性、替代方案、及好處,如先前所述。為簡 便起見,這些特色、屬性、及好處將不再予以重覆。 另外,在熱能拒絕元件1410提供熱能捕捉及拒絕能力並 非必要的情況下,熱能拒絕元件丨4 1 〇亦可加以省略。 本發明的另一個特徵乃是一種具有複數個消耗裝置的系統, 其中’各個消耗裝置分別具有一個功率調整及熱能管理模 t ’用以接收主要功率供應的功率及流體唧筒機構的動作流 ,。請參考第24圖,在這個實施例中,主要功率供應31〇〇 = 疋用來挺供外部功率來源(圖中未示)的啟始功率調整。主Page 52 1239438 V. Description of the invention (46) It should be noted that the power adjustment and thermal energy management module i 〇〇〇 can also be placed on the back of the device 2000 or the power adjustment element 1 1 〇 and / or thermal energy The management element 1220 can also be placed on the front side and the back side of the device 200 at the same time. Furthermore, the power adjusting element 1 1 0 0 can also be placed on the front side of the device 2 0, and the thermal energy management element 1 2 0 0 can also be placed on the back side of the device 2 0 0. ^ Please refer to FIG. 23. In another embodiment of the present invention, the system 2000 has a power adjustment module 丨 00 placed in the device 200, and the thermal energy capture and rejection module 1 400 can It is placed on the surface of the device 200 to provide the thermal management of the device and the power generating element 1100. As in the embodiment shown in FIG. 22, the power adjustment module 100 in FIG. 23 can be placed on the back side of the device 200 or on the front side of the device 200. In addition, the power adjustment module 丨 〇〇 can also be placed on the front and back sides of the device 20 () at the same time. It should be noted that in all the embodiments shown in Figures 20 to 23, these two components and modules, as well as a consumer device with power adjustment and / or thermal management functions / components, may also have a second The various features, attributes, alternatives, and benefits of the corresponding components and modules shown in Figures 19 to 19 are as described previously. For simplicity, these features, attributes, and benefits will not be repeated. In addition, in a case where it is not necessary for the thermal energy rejection element 1410 to provide thermal energy capture and rejection capabilities, the thermal energy rejection element 4 1 0 may be omitted. Another feature of the present invention is a system having a plurality of consuming devices, wherein ‘each consuming device has a power adjustment and thermal energy management module t ′ for receiving the power of the main power supply and the action flow of the fluid cartridge mechanism, respectively. Please refer to Fig. 24. In this embodiment, the main power supply 3100 = 疋 is used to support the initial power adjustment of an external power source (not shown). the Lord

1239438 五、發明說明(47) -----〜 ,力率供應3100的輸出乃是用來分別提供給功率調整及熱能 1理模組100(^至1 0 0 0。的各個功率調整元件11〇〇&至11〇〇二此 k些功率調整元件丨100a至丨100c乃是用來分別提供消耗裝置 2〇〇a至2 0 0c的區域性功率調整。這些功率調整元件11〇(^至 11 〇 〇 C JT以是第8至丨9圖所示及先前所述實施例的任何一種。 ^這個主要功率供應3100乃是利用功率匯流排31 10,藉以 提供啟始調整功率給各個功率調整元件11〇〇asU〇〇c。這個 功率匯流排31 10可以並聯繞線至各個熱能管理元件12〇〇& 1 20 0C 〇 這個主要功率供應3100可以具有分離的元成(類似於第 1圖所示)、或可以是一個功率調整模組丨丨〇〇 (如第2圖所示 )。另外,主要功率供應3 1 0 0亦可以具有額外的功率供應電 路’其分別放置於裝置200a至200c的鄰近區域。這些額外的 功率供應電路可以在供應功率調整元件11〇(^至11〇〇(:前,用 來提供額外的啟始功率調整。 請繼續參考第24圖,流體唧筒機構32〇〇可以分別提供動 作流體至各個功率調整及熱能管理模組1〇〇〇a至1〇〇〇(:的熱能 管理兀件1200a至1200c。這些熱能管理元件12〇〇a至1200c可 以捕捉及移除裝置200a至200c及/或功率調整元件ii〇〇a至 1100c所生的熱能。這些熱能管理元件12〇〇3至12〇〇(;:可以是 先七所述或弟8至19圖所不的任何一個實施例。另外,第2 4 圖的系統3 0 0 〇亦可以具有區域的熱能拒絕元件(圖中未示 )’其係置於裝置200a至200c表面或附近。另外,系統3〇〇〇 亦可以、或選擇性地具有一個全域熱能拒絕元件(圖中未示1239438 V. Description of the invention (47) ----- ~, the output of the power supply 3100 is used to provide power adjustment and thermal energy management modules 100 (^ to 1 0 0 0. each power adjustment element). From 100 to 100, these power adjustment elements 100a to 100c are used to provide regional power adjustments of the consumption devices 200a to 200c, respectively. These power adjustment elements 11o ( ^ To 11 〇〇C JT is any of the embodiments shown in Figures 8 to 9 and previously described. ^ This main power supply 3100 is the use of power bus 31 10 to provide initial adjustment power to each Power adjustment element 11〇asU〇c. This power bus 31 10 can be wound in parallel to each thermal energy management element 12 00 & 1 20 0 C 〇 This main power supply 3100 can have a separate element (similar to the first (Shown in Figure 1), or it can be a power adjustment module 丨 丨 〇〇 (shown in Figure 2). In addition, the main power supply 3 1 0 0 can also have additional power supply circuits' which are placed in the device separately Adjacent areas from 200a to 200c. These extra power The application circuit can be used to provide additional start-up power adjustments before the power adjustment elements 1110 (^ to 1100 () are provided. Please continue to refer to Figure 24. The fluid cartridge mechanism 3200 can provide the operating fluid to each Power adjustment and thermal energy management modules 1000a to 1000 (: Thermal energy management elements 1200a to 1200c. These thermal energy management elements 1200a to 1200c can capture and remove devices 200a to 200c and / or The thermal energy generated by the power adjustment elements ii00a to 1100c. These thermal energy management elements 12003 to 1200 (;: can be any of the embodiments described in the first seven or the eighth to the nineteenth. Figures. The system 300 in Fig. 24 may also have a zone of thermal energy rejection elements (not shown), which is placed on or near the surfaces of the devices 200a to 200c. In addition, the system 300 may also, or select Has a global thermal rejection element (not shown in the figure)

第54頁 1239438 五、發明說明(48) ),用以拒絕一個或更多個熱能管理元件1 2 0 0 a至1 2 0 0 c的熱 能。另外,這些熱能拒絕元件亦可以具有第2至1 9圖所示及 先前所述熱能拒絕元件及熱能拒絕模組的全部特色。 這個流體唧筒機構乃是利用流體匯流排3 2 1 0,用來交換 動作流體及各個熱能管理元件1 2 0 0 a至1 2 0 0 c。亦即,哪筒機 構320 0乃是利用流體匯流排3210,提供冷卻流體至各個熱能 管理元件1 20 0a至1 20 0c ;且流體匯流排3210乃是用來提供熱 月t*管理元件1 2 0 0 a至1 2 0 0 c的加熱流體的路控給流體η即筒機構 320 0。這個流體匯流排321〇亦可以並聯或串聯地繞線至各個 熱能管理元件1 2 0 0a至1 200c。 應該注意的是,第2 4圖的系統3 0 0 0可以利用第2至7圖所 示及先前所述的功率調整模組丨〇〇加以實施例。在這種情"況 下這些熱此管理操作或功能便可以利用各種方法執行,勹 括先前所述及第2至7、20及21圖所示的方法。如此,因應= 用的熱能管理技術類型,流體唧筒機構32〇〇及流體匯浐2 3 2 1 0便可不再必要。 ^發明的各種實施例已說明如上。熟習此技藝者 —^而,在不達为本發明範圍及精神的情況下,孰習此太 發明進行各種變動、調整及變更,因i 整特色及熱能管理特色的系統。就此而ΐ利 見’且因此,應該落在本發明的牛:圍亦應該可以預Page 54 1239438 V. Description of the Invention (48)) is used to reject the thermal energy of one or more thermal energy management elements 1 2 0 0 a to 1 2 0 0 c. In addition, these heat rejection elements can also have all the features of the heat rejection elements and heat rejection modules shown in Figures 2 to 19 and previously described. This fluid pumping mechanism uses a fluid bus 3 2 10 to exchange working fluid and various thermal energy management elements 1 2 0 0 a to 1 2 0 0 c. That is, which cylinder mechanism 3200 uses the fluid bus 3210 to provide cooling fluid to each of the thermal energy management elements 1 20 0a to 1 20 0c; and the fluid bus 3210 is used to provide the thermal month t * management element 1 2 The circuit of the heating fluid from 0 0 a to 1 2 0 0 c is controlled by the fluid η, that is, the barrel mechanism 320 0. This fluid bus 3210 can also be wound in parallel or in series to the respective thermal energy management elements 12 00a to 1 200c. It should be noted that the system 300 of FIG. 24 can be implemented by using the power adjustment module shown in FIGS. 2 to 7 and previously described. In this case, these management operations or functions can be performed by various methods, including the methods described previously and shown in Figs. 2 to 7, 20, and 21. In this way, according to the type of thermal energy management technology used, the fluid cartridge mechanism 3200 and the fluid sink 2 3 2 1 0 are no longer necessary. ^ Various embodiments of the invention have been described above. Those who are familiar with this skill-^ And, without reaching the scope and spirit of the present invention, learn about this invention to make various changes, adjustments and changes, due to the system of features and thermal management features. In this regard, it ’s good to see that ’and therefore, it should fall on the cattle of the present invention: Wai should also be predictable

12394381239438

^置(包括第22及23圖所示及先前所述的消耗裝置)的其他 另外,這些功率调整及熱能管理特色亦可以組合於這個 核、、且元件、或裝置中。利用這種方法加入特色亦應該可以 =^ :且應該落在本發明的範圍内。另外,Kenny專利申請 槿的耸ί關微通道熱能交換器、微通道、感應器、及°即筒機 該可^二不同類型排列、佈局、架構、設計、及技術,亦應 均應傲盔f進一步的參考。事實上,Kenny專利申請案全文 〜馬本案的參考。Other (including the consumption devices shown in Figures 22 and 23 and previously described) In addition, these power adjustment and thermal management features can also be combined in this core, and components, or devices. It should also be possible to add features using this method = ^: and should fall within the scope of the present invention. In addition, Kenny ’s patent application for the tower ’s micro-channel thermal energy exchanger, micro-channel, sensor, and package machine should be different types of arrangement, layout, architecture, design, and technology. f Further reference. In fact, the full text of the Kenny patent application is a reference to the Maben case.

第56頁 1239438 圖式簡單說明 第1圖係一種積體電 ㈣及熱捕捉/拒絕的衣傳 ^舉/=兒’微處理器)的功率 第2圖係根據本發明的—個又一塊圖。 的剖面圖。 特斂、一種分離式功率調整模組 第3圖係加入至一個 ,的-個實施例的方 應用裝置中、第2圖功率調^ 第5圖係根據本 ^括功率及接地導—種分離式功率調整模組 俯視圖的方塊圖。 寺徵、沒個功率調整模組介面的 第7圖係加入至一伽拉躺 ^ Ο p, - , . ^ …、月匕官理模組的方塊圖。 弟8圖係根據本發明的一個特徵 口 模組的剖面圖。 力率凋正及熱能管理 第9圖係加入至一個籍雜 熱能管理模組的方塊積圖體電路應用裝置中、第8圖功率調整及 第10A圖係根據本發明的—個特徵、 個微通道架構的俯視圖。 …此S理兀件的 第圖係第10A圖所示的一 、 架構沿著AA切線的剖面圖。 兀仟τ t個被通逼 第11圖係加入至一個雔綠r H · 方“ace-d〇wn)積體電^岸⑽用^^^包裝〜面向下 貝1^电路應用裝置中另一個實施例的方塊 第57頁 1239438 圖式簡單說明 > 圖。 第12A圖係加入? _ 上方(bee—d〇Winl 線 UUal 一 η—lin〇 包裝、面向 塊圖。 )積體電路應用裝置中另一個實施例的方 第1 2 B圖係搭配一個 (dual — in〜Hne個包裝遮蓋加入至弟12A圖的一個雙線 路應用裝置中i包裝、面向上方(faCe ~down )積體電 例的方塊圖。 在一個印刷電路^^個功率調整及熱能管理模組(固定 第14圖係根;=)、的/-個實施例的剖面圖。 個實施例的剖面圖。這個功率调整及熱能管理模組的另一 第1 5圖係加入至一個 及熱能管理模組的H電路應用裝置中、第12圖功率調整 第Η圖係根據本發明個;η方塊圖。 個實施例的剖面圖。、功率调整及熱能管理模組的另一 Γ:::/加入至—個積體電路應用裝置中、养… 第17Β圖係加入至—個的^固/施例的方塊圖及剖面圖。 ^ μ ^ - 個積體電路應用裝置中、奴 式…、捕捉7L件一個實施例 . 袼配一個分離 第18圖係根據本發明的方龙圖及。面圖。 理模組的剖面圖。 一個功率調整及熱能管 第19A、19B及19C圖係加入至一 個功率調整及熱能管個積體電路應用裝置中、這 ㈣圖係根據本發明、」;=方塊圖。 封閉迴路功率調整及熱能管理 第58頁 12394381239438 on page 56 Brief description of the diagram. Figure 1 shows the power of an integrated circuit and heat capture / rejection (e.g., a microprocessor). Figure 2 is a block diagram according to the present invention. . Section view. Featured, a separate power adjustment module Figure 3 is added to the square application device of an embodiment, Figure 2 power adjustment ^ Figure 5 is based on the power and ground conduction-this kind of separation Block diagram of the top view of the power adjustment module. Figure 7 of the temple sign and the interface of each power adjustment module is added to a Gala lay ^ Ο p,-,. ^…, The block diagram of the moon dagger official module. Figure 8 is a cross-sectional view of a port module according to a feature of the present invention. Force rate correction and thermal energy management Figure 9 is added to a block product body circuit application device of the hybrid thermal energy management module, Figure 8 power adjustment and Figure 10A are according to the present invention-a feature, a micro Top view of aisle architecture. … The figure of this S element is a cross-sectional view of the framework along the line AA tangent shown in Figure 10A. The vulture τ t is forced into the eleventh picture system to be added to a 雔 green r H · square "ace-d0wn) integrated circuit ^ shore ⑽ packaged ^^^ facing the bottom 1 ^ circuit application device A block of an embodiment, page 57, 1239438, a brief description of the diagram > Figure. Figure 12A is added? _ Above (bee-d0Winl line UUal-n-lino packaging, block-oriented diagram.) Integrated circuit application device Figure 1 2B of another embodiment in the figure is a dual-in ~ Hne package cover added to a dual-line application device in Figure 12A i package, facing up (faCe ~ down) integrated electrical example A block diagram of a printed circuit ^^ power adjustment and thermal management module (fixed root of Figure 14; =), a cross-sectional view of an embodiment. A cross-sectional view of this embodiment. This power adjustment and Another 15th figure of the thermal energy management module is added to an H circuit application device of the thermal energy management module, and the second figure of the power adjustment of the 12th figure is a block diagram according to the present invention; η a block diagram. Figure., Another Γ ::: / of the power adjustment and thermal management module is added to a product In the road application device, the maintenance ... Figure 17B is a block diagram and a cross-sectional view of the ^ solid / embodiment added. ^ Μ ^-An embodiment of the integrated circuit application device, slave type, and capture 7L pieces Equipped with a separate 18th figure is a square dragon figure and according to the present invention. The surface view. The cross-sectional view of the management module. A power adjustment and thermal energy tube Figures 19A, 19B and 19C are added to a power adjustment and thermal energy tube. In an integrated circuit application device, this diagram is according to the present invention, "; = block diagram. Closed loop power adjustment and thermal energy management. Page 58 1239438

統的一個實施例的 第21圖係根據本發Γ圖; & 統的另一個實施 廷個封閉迴路功率調整及熱能管理系 第22圖係根據本發明方?圖。 統的另一個實施你 ^個封閉迴路功率調整及熱能管理系 第23圖係根據本二方塊圖。> ’、 方塊圖。 绝個功率調整系統的另一個實施例的 第2 4圖係根據本發 及熱能管理+统~缸一個特徵、一個封閉迴路功率調整 系、、先(包括功率及熱藤流排)的方塊圖。 元件符號說明 2 直尾翅 4 熱能散佈裝置 6 裝置 10 , 3000 系統 102 ’ 102a,l〇2b 基底 106a—l〇6p介面焊墊 l〇8a , ll〇a , 114a 功率 11 0 b接地焊墊 11 4 b接地導管 及接地導管 11 8 b輸出接地穿孔 122連結焊塾 1 旁路電容器 3 電壓整流體 5 電性連接 7 印刷繞線基底 1 0 0功率調整模組 1 04a--1 〇4h介面穿孔 106x,106y,106z 預定焊墊 108b接地穿孔 1 1 2電路 116a,116b ,116c 輸出功率 118a輸出功率穿孔 1 2 0習知繞線Figure 21 of an embodiment of the system is based on the present figure; & Another implementation of the system is a closed loop power adjustment and thermal energy management system. Figure 22 is according to the present invention? Illustration. Another implementation of the system is a closed loop power adjustment and thermal energy management system. Figure 23 is based on the second block diagram. > ’, block diagram. Figures 2 and 4 of another embodiment of the last power adjustment system are block diagrams based on a feature of the generator and thermal energy management system, a closed loop power adjustment system, and first (including power and hot rattling). . Component symbol description 2 Straight tail fins 4 Thermal energy dispersing device 6 Device 10, 3000 System 102 '102a, 102b Substrate 106a-106p Interface pads 108a, 110a, 114a Power 11 0 b Ground pad 11 4 b grounding conduit and grounding conduit 11 8 b output ground perforation 122 connection welding pad 1 bypass capacitor 3 voltage rectifier 5 electrical connection 7 printed winding base 1 0 0 power adjustment module 1 04a--1 〇 4h interface perforation 106x, 106y, 106z Predetermined pads 108b Ground perforation 1 1 2 Circuit 116a, 116b, 116c Output power 118a Output power perforation 1 2 0 Conventional winding

第59頁 1239438Page 59 1239438

一…私且 路板 300 ’1000 ’l〇〇〇a--l〇〇〇c 熱能管理模組 1100功率調整元件 1260管道 1200,1200a--1200c熱能管理元件 1280控制器 1300包裝 1 2 1 0,1 4 3 0微通道熱能交換器 1 220,1 220 — 1,1 220 — 2,1 440 微通道I ... Private and road boards 300 '1000' l00a--l00c Thermal energy management module 1100 Power adjustment element 1260 Pipe 1200, 1200a--1200c Thermal energy management element 1280 Controller 1300 Packaging 1 2 1 0 , 1 4 3 0 microchannel heat exchanger 1 220, 1 220 — 1, 1 220 — 2, 1 440 microchannel

1 2 3 0唧筒 1 2 4 0流體入D 1250流體出口 1320遮蓋 1 2 7 0 ’ 1 2 9 0感應器 1 4 1 0熱能拒絕元件 1 400熱能捕捉及拒絕模組 1 42 0熱能捕捉元件 3 1 0 0主要功率供應 3 11 0功率匯流排 3 2 0 0流體唧筒機構 3 2 1 0流體匯流排1 2 3 0 Cartridge 1 2 4 0 Fluid inlet D 1250 Fluid outlet 1320 Cover 1 2 7 0 '1 2 9 0 Sensor 1 4 1 0 Thermal energy rejection element 1 400 Thermal energy capture and rejection module 1 42 0 Thermal energy capture element 3 1 0 0 Main power supply 3 11 0 Power bus 3 2 0 0 Fluid pump mechanism 3 2 1 0 Fluid bus

Claims (1)

六、申請專利範圍 广,模組之該電路 3.如申請專利範圍笛1s亥弟—介面上。 調整模組更包括:弟1項所述之系統,其中,該第—功率 面上;以:率蛘墊’置於該第-功率調整模組之該第二介 率焊塾,電=接該功率穿孔係電性連接至該功 -部分。叔供電性連接於該第二介面及該電路之至 4 ·如申請專利範圍第丨項 之 係電性連接於—功率管,〃於’第、中’/亥功率穿孔 二= 且其中,該功率導管係提供電性連I 二J率牙孔及4第一功率調整模組之該電路之至少一部> 5 ·如申請專利範圍第1 述之系統, 調整模組更包括: 違第一功率 至少一功率焊墊,置於該第一功率調整模組之 面上; w弟二介 至少一功率穿孔,其中,該功率穿孔係電性連接於上 二介面及該第一功率調整模組之該電路之至少一 乂 4第 及 。勺;以 至少一輸出功率導管,耦接該第一功率調整模組之兮^ 路,用以提供調整功率i該第/積體電路裝置。、^電 6·如申請專利範圍第5項所述之系統,其中,該輪出功 導管係連接至一輸入功率焊蛰,其置於該第一功率調敕 J ^ 模 1239438 六、申請專利範圍 電路裝置,該第一功率調整及熱能管理模組係具有一第 一 介面及一第二介面,該第一功率調整'及熱能管理模組 係包 括: 一半導體基底; 複數介面穿孔,用以提供電性連接於該第一介面及該第 二介面間;以及 電路,置於該半導體基底中,用以調整欲施加至該第一 積體電路裝置的功率;6. The scope of patent application is wide, the circuit of the module 3. For example, the scope of patent application is 1s. The adjustment module further includes: the system described in item 1, wherein the first power plane is placed on the second power rate welding pad of the first power adjustment module with a rate pad. The power punch is electrically connected to the work-part. The tertiary power supply is connected to the second interface and the circuit to 4 · If the item No. 丨 of the patent application is electrically connected to the-power tube, it is in the "first, middle" / Hai power perforation 2 =, and among them, the The power conduit is provided with at least one part of the circuit which is electrically connected to the second and third rate tooth holes and 4 first power adjustment modules. 5 · If the system described in the first patent application system, the adjustment module further includes: A power at least one power pad is placed on the surface of the first power adjustment module; at least one power perforation is used for the second dipole, wherein the power perforation is electrically connected to the upper two interfaces and the first power adjustment die Set at least one of the circuits and the fourth. Scoop; at least one output power conduit is coupled to the first power adjustment module to provide the power adjustment circuit. 6. Electrical system according to item 5 of the scope of patent application, wherein the power output duct is connected to an input power welding pad, which is placed in the first power modulation J ^ mold 1239438 6. Application for patent Range circuit device, the first power adjustment and thermal energy management module has a first interface and a second interface, the first power adjustment and thermal energy management module includes: a semiconductor substrate; a plurality of interface perforations for Providing an electrical connection between the first interface and the second interface; and a circuit placed in the semiconductor substrate to adjust the power to be applied to the first integrated circuit device; 一微通道結構,具有置於該半導體基底中之至少一微通 道,用以捕捉熱能,其中,該微通道結構係架構以允許 一 流體流動經過; 一第二功率調整及熱能管理模組,其耦接於該第二積體 電路裝置,該第二功率調整及熱能管理模組係具有一第 一 介面及一第二介面,該第二功率調整及熱能管理模組 係包 括: 一半導體基底; 複數介面穿孔,用以提供電性連接於該第一介面及該第 二介面間;以及A microchannel structure having at least one microchannel placed in the semiconductor substrate for capturing thermal energy, wherein the microchannel structure is structured to allow a fluid to flow through; a second power adjustment and thermal energy management module, which Coupled to the second integrated circuit device, the second power adjustment and thermal energy management module has a first interface and a second interface. The second power adjustment and thermal energy management module includes: a semiconductor substrate; A plurality of interface perforations for providing electrical connection between the first interface and the second interface; and 電路,置於該半導體基底中,用以調整欲施加至該第一 積體電路裝置的功率; 一微通道結構,具有置於該半導體基底中之至少一微通 道,用以捕捉熱能,其中,該微通道結構係架構以允許 一 流體流動經過; 一流體唧筒機構,耦接該等第一及第二功率調整及熱能A circuit placed in the semiconductor substrate to adjust the power to be applied to the first integrated circuit device; a microchannel structure having at least one microchannel placed in the semiconductor substrate to capture thermal energy, wherein, The micro-channel structure is structured to allow a fluid to flow through; a fluid cartridge mechanism coupled to the first and second power adjustments and thermal energy 第64頁 1239438 六、申請專利範圍 官理模組,用以提供該流體I該 熱能管理模組。 1 5 ·如申請專利範圍第1 4項所述之 率調整及熱能管理模組更包栝: # n ^ ^ ^ _ ngn ^ γ地嫌及該第一功率凋整及熱月匕 即同,置於該流體哪筒機稱 管理模組之該微通道結構間。1 6 ·如申請專利範圍第丨5項所述之系統’、μ弟功 率調整及熱能管理模組更包括:^ gf 一 -電流感應器,置於該半導體基底巾用以棱供表不一 電流消耗之資訊;以及 &丨;r主- 一批在,ι 口口 ,, 』龍51 ,用以接收表不該電流消 ’耦接該電流感應二 流體流率。 耗之该資訊、並據此調整該唧肉輸立誃1 7,如申請專利範圍第1 5項所述之糸、^ ^ 率調整及熱能管理模組更包括:β @埶自,瞢μ ρ , —^ I# rV' r- ua " A率調整及熱月匕S理杈組 皿度感應器,置於該第〆功十、中,用以提供表示一溫度之資訊,以作& > - γ 控制為,耦接該溫度感應為〃 胡敫蛑筐一人參 含女咨4 营机’纟周正邊弟 功率 〜貝訊、並因應表示該溫度之3員 ^ Ώ -k, >. ,处嫌中之4〉爪體〉爪動。 正及熱能管理模組之該微通道結構Τ 18 4fn ^ ^ 、+,j^系統’其中’ 5玄控制 L如申晴專利範圍第丨7項所述之 哭,m # 士- , /f系調整邊即同輸出之一 口口 因應表示該溫度之該資訊 ’ 體流率。 1 Q J* rb rfc },少系統,其中’该溫度感 9·如申睛專利範圍第17項所述之’ m ^ ΊΖ ^ A參調整及熱能官理核組 應态及該控制器係置於該第〆功+Page 64 1239438 VI. Scope of Patent Application The official management module is used to provide the fluid I and the thermal energy management module. 1 5 · The rate adjustment and thermal energy management module described in item 14 of the scope of patent application is more inclusive: # n ^ ^ ^ _ ngn ^ γ is the same as the first power aging and the hot moon. It is placed between the microchannel structure of the fluid which is called the management module. 1 6 · The system described in item 5 of the scope of the patent application, the power adjustment and thermal management module of the μ brother further includes: ^ gf-a current sensor, placed on the semiconductor substrate to be used for different purposes Information about current consumption; and &r;-a batch of at ι 口 口 ,, 『龙 51』, used to receive the electric current to decouple the current sensing two fluid flow rate. Consume this information, and adjust the meat loser 17 accordingly, as described in item 15 of the scope of patent application, ^ ^ rate adjustment and thermal management module further includes: β @ 埶 自 , 瞢 μ ρ, — ^ I # rV 'r- ua " A-rate adjustment and hot-moon scraper sensor, placed in the first tenth step, is used to provide information indicating a temperature for the purpose of & >-γ control is, coupled to the temperature sensor is 〃 Hu 敫 蛑 basket one ginseng with female counselor 4 camp plane '纟 Zhou Zhengbian brother power ~ Bei Xun, and 3 members corresponding to the temperature ^ k -k, >., In the suspect 4> Claw body> Claw movement. The microchannel structure of the positive and thermal management module T 18 4fn ^ ^, +, j ^ system 'where' 5 Xuan control L as described in Shen Qing patent scope No. 丨 7, m # 士-, / f The adjustment side is the same as the output, and the volume of the information corresponding to the temperature is indicated. 1 QJ * rb rfc}, less system, in which 'this temperature sense 9 · as described in the 17th patent scope of Shenyan' m ^ ΊZ ^ A reference adjustment and thermal energy management core group response state and the controller system In this first work + 及第二功率調整 该第一功 調 流 之And the second power adjustment. 12394381239438 該半導體基底中。 該第一功 功率調整 该第一功 及 2〇·如申請專利範圍第14項所述之系統,其中 率調整及熱能管理模組之該電路係置於該第一 熱能官理模組之該第二介面上。 2 1 ·如申請專利範圍第2〇項所述之系統,其中 率調整及熱能管理模組更包括: 至少一功率導管,置於該半導體基底中;以及 埶一功率焊塾’置於該第二介面上’其中,該功率焊 墊係電性連接該功率導管,用以提供電性連接於誃 人 面及該第一功率調整及熱能管理模組之該電路之至少一 ^ 22·如申請專利範圍第20項所述之系統,其中,該第一劝 率調整及熱能管理模組更包括: Χ 至少一輸出功率焊墊,置於該第一介面上;以及 二:輸出功率穿孔’其t,該輪出功率穿孔係耦接該 弟一功率調整及熱能管理模組之該電路及該輸出功率焊 23.如申請專利範圍第22項所述之系統,其中,該輸出功 率焊墊係對應於該第一積體電路裝置之一輸入。 2 4 ·如申請專利範圍第1 4項所述之系統,其中,該第一功 率調整及熱能管理模組之該電路係置於該第一功率調整及 熱能管理模組之該第一介面上。 2 5·如申請專利範圍第24項所述之系統,其中,該第一功 率調整及熱能管理模組更包括:The semiconductor substrate. The first work power adjusts the first work and the system described in item 14 of the scope of patent application, wherein the circuit of the rate adjustment and thermal energy management module is placed in the first thermal energy management module. Second interface. 2 1 · The system as described in item 20 of the scope of patent application, wherein the rate adjustment and thermal energy management module further includes: at least one power conduit placed in the semiconductor substrate; Two interfaces, where the power pad is electrically connected to the power conduit to provide at least one of the circuits electrically connected to the human face and the first power adjustment and thermal energy management module. The system described in item 20 of the patent scope, wherein the first advisement rate adjustment and thermal energy management module further includes: χ at least one output power pad placed on the first interface; and two: output power perforation t, the power output perforation is coupled to the circuit and output power welding of the power adjustment and thermal management module of the brother 23. The system according to item 22 of the scope of patent application, wherein the output power welding pad is An input corresponding to one of the first integrated circuit devices. 24. The system according to item 14 of the scope of patent application, wherein the circuit of the first power adjustment and thermal energy management module is placed on the first interface of the first power adjustment and thermal energy management module. . 25. The system according to item 24 of the scope of patent application, wherein the first power adjustment and thermal energy management module further includes: 1239438 六、申請專利範圍 至少一功率焊墊’置於該第— 之該第二介面上;以及 刀率调整及熱能管理模組 至少一功率穿孔,其中,# 穿孔,用以提供電性連接於該第二::::性連接該功率 路之至少一部分間。力丰肩整及熱能管理模組《該電 請專利範圍第25項所述之系統,”,,… j電性連接一功率導管’置於該率、中该功率穿 核組之該半導體基底中,且其中 及熱能管理 連接於該功率烊塾及該第一功率調電性 電路之至少一部分間。 ^及熱-官理帛組之該 如申請專利範圍第26項所述之系統,其中, ::周整及熱能管理模組更包括至少-輸出功率導:J 该第一功率調整及熱能管理模組之該 =楛 ^ 整功率至該第一 。 帛^供調 專利範圍第27項所述之系,統,其中,該輸出功 埶处If接至一輸入功率焊墊,置於該第-功率調整及 ,、、、此S理模組之該第一介面上,其中,該輸入功率 對應該第一積體電路裝置之該功率輸入。 丁 2 9.如申請專利範圍第1 4項所述之系統’其中,該第一功 率調整及熱能管理模組及該第一積體電路裝置係包括在且 有一電性介面之一包裝中。 ” 30·如申請專利範圍第29項所述之系統,其中,該包裝係 具有一光學介面。 1239438 六、申請專利範圍 3 1.如申請專利範圍第1 4項所述之系統,其中,該第一積 體電路裝置係具有一光學介面。 3 2. —種熱能管理系統,用以捕捉第一及第二積體電路裝 置所生之熱能,該系統包括·· 一第一熱能管理元件,耦接該第一積體電路裝置,用以 捕捉該第一積體電路裝置所生之熱能,其中,該第一熱 能 管理元件,在操作期間,係利用具有液相之一流體捕 捉該 第一積體電路裝置所生之熱能; 一第二熱能管理元件,耦接該第二積體電路裝置,用以 捕捉該第二積體電路裝置所生'之熱能,其中,該第二熱 能 管理元件,在操作期間,係利用具有液相之一流體捕 捉該 第二積體電路裝置所生之熱能;以及 一流體唧筒機構,耦接該等第一及第二熱能管理元件, 用以提供該流體至該等第一及第二熱能管理元件。 3 3.如申請專利範圍第32項所述之系統,更包括一流體匯 流排,其中,該流體匯流排係連接該流體唧筒機構至該 等 第一及第二熱能管理元件。 3 4.如申請專利範圍第3 3項所述之系統,其中,該等第一 及第二熱能管理元件係並聯於該流體唧筒機構。 3 5.如申請專利範圍第33項所述之系統,其中,該等第一 及第二熱能管理元件係串聯於該流體唧筒機構。 3 6.如申請專利範圍第3 3項所述之系統,其中,該第一熱 能管理元件係包括: 一基底,其中,該基底係具有置於其中之一微通道之至1239438 VI. Patent application scope At least one power pad is placed on the second interface of the first and second; and at least one power perforation of the blade rate adjustment and thermal management module, wherein # perforation is used to provide electrical connection to The second ::: is sexually connected to at least a part of the power path. Lifeng Shoulder and Thermal Management Module "The system described in item 25 of this patent claim," ,, ... j Electrically connect a power conduit 'to the semiconductor substrate placed at the rate and the power penetrating group And the thermal energy management is connected between the power unit and at least a part of the first power electrical regulating circuit. The system of the thermal-government unit as described in item 26 of the patent application scope, wherein The :: weekly adjustment and thermal energy management module further includes at least-the output power guide: J the first power adjustment and thermal energy management module of the = 楛 ^ whole power to the first. 帛 ^ 27 items for adjustment The system, wherein, if the output power is connected to an input power pad, placed on the first power adjustment and, the first interface of the S-module, where, the The input power corresponds to the power input of the first integrated circuit device. D 2 9. The system described in item 14 of the scope of the patent application, wherein the first power adjustment and thermal energy management module and the first integrated circuit The circuit device is included in a package with an electrical interface "30. The scope of the system as patented in item 29, wherein the packaging system having an optical interface. 1239438 VI. Scope of Patent Application 3 1. The system described in item 14 of the scope of patent application, wherein the first integrated circuit device has an optical interface. 3 2. —A thermal energy management system for capturing the thermal energy generated by the first and second integrated circuit devices. The system includes a first thermal energy management element coupled to the first integrated circuit device for Capturing the thermal energy generated by the first integrated circuit device, wherein the first thermal energy management element captures the thermal energy generated by the first integrated circuit device by using a fluid having a liquid phase during operation; a second The thermal energy management element is coupled to the second integrated circuit device to capture the thermal energy generated by the second integrated circuit device. The second thermal energy management element utilizes one of the liquid phases during operation. The fluid captures thermal energy generated by the second integrated circuit device; and a fluid cartridge mechanism coupled to the first and second thermal energy management elements for providing the fluid to the first and second thermal energy management elements. 3 3. The system according to item 32 of the scope of patent application, further comprising a fluid bus, wherein the fluid bus is connected to the fluid cartridge mechanism to the first and second thermal energy management elements. 34. The system according to item 33 of the scope of patent application, wherein the first and second thermal energy management elements are connected in parallel to the fluid cartridge mechanism. 3 5. The system according to item 33 of the scope of patent application, wherein the first and second thermal energy management elements are connected in series to the fluid drum mechanism. 36. The system according to item 33 of the scope of patent application, wherein the first thermal energy management element system comprises: a substrate, wherein the substrate system has a microchannel disposed in one of the microchannels. 第68頁 1239438 紗,體之一流動經過;以及 道,用以產該微通道中、該流體 六、申請專利範圍 少一部分,且架構以允許該亦 一哪筒,連接至該微通 之該流動 3 7.如申請專利範圍第3 6項所述之系統,其中,該第 熱 熱 能管理元件之該唧筒係一電滲性類型之唧筒 該弟 〇 該流體唧 3 8 ·如申請專利範圍第3 6項所述之系統,其中, 能官理元件之該唧筒係連接i該流體唧筒機構 33·如申請專利範圍第38項所述之系統,其中, 阂機構係具有一電滲性類裂之0即筒。 4 0 ·如申請專利範圍第3 2項所述之系統,更包括: 第一功率調整元件,揭接於該第一積體電路裝置,該 第一功率調整元件係具有一第一介面及一第二介面,該 一功率調整元件係包括: 一半導體基底; 複數介面穿孔以提供該第一介面與該第二介面間之電 連接; 曰 弟複數焊墊,置於該第一介面上,各個該第一複數 知墊係連接至該第一介面上、該等介面穿孔之一對應介 穿孔;以及 電路’置於該半導體基底中,用以調整欲施加至該第一 積體電路裝置之功率,其中,該電路係具有至少一電壓 整器及至少一電容器。 4 1 ·如申請專利範圍第4 0項所述之系統,其中,該第一功 率調整元件及該第一積體電路裝置係包括在具有一電性Page 1239438 yarn, one of the body flows through; and the channel used to produce a small part of the microchannel, the fluid VI, the scope of patent applications, and the structure to allow the tube to be connected to the micropass Flow 3 7. The system described in item 36 of the scope of patent application, wherein the tube of the first thermal energy management element is an electroosmotic type tube. The fluid is 38. The system described in item 36, wherein the tube of the organizing element is connected to the fluid tube mechanism 33. The system described in item 38 of the scope of patent application, wherein the tube mechanism has an electroosmotic crack 0 is the tube. 40. The system as described in item 32 of the scope of patent application, further comprising: a first power adjustment element connected to the first integrated circuit device, the first power adjustment element having a first interface and a A second interface, the power adjusting element includes: a semiconductor substrate; a plurality of interface holes are perforated to provide an electrical connection between the first interface and the second interface; a plurality of bonding pads are disposed on the first interface, each The first plurality of know pads are connected to the first interface, and one of the interface holes corresponds to a through-hole; and a circuit is placed in the semiconductor substrate to adjust the power to be applied to the first integrated circuit device. Wherein, the circuit has at least one voltage regulator and at least one capacitor. 4 1 · The system described in item 40 of the scope of patent application, wherein the first power adjustment element and the first integrated circuit device are included in 1239438 六、申請專利範圍 面之一包裝中。 4 2.如申請專利範圍第41項所述之系統,其中,該包裝係 具有一光學介面。 4 3.如申請專利範圍第32項所述之系統,其中,該第一積 體電裝置係具有一光學介面。1239438 VI. Scope of patent application One of the above packages. 4 2. The system according to item 41 of the scope of patent application, wherein the package has an optical interface. 4 3. The system according to item 32 of the scope of patent application, wherein the first integrated electrical device has an optical interface. 第70頁Chapter 70
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